H03K

PULSE TECHNIQUE measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M

This subclass covers:

methods, circuits, devices or apparatus using active elements operating in a discontinuous or switching manner for generating, counting, amplifying, shaping, modulating, demodulating or otherwise manipulating signals;

electronic switching not involving contact-making and braking;

logic circuits handling electric pulses.

In this subclass, the following expression is used with the meaning indicated:

"active element" exercises control over the conversion of input energy into an oscillation or a discontinuous flow of energy.

In this subclass, where the claims of a patent document are not limited to a specific circuit element, the document is classified at least according to the elements used in the described embodiment.

The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:

H03K17/695

covered by

H03K17/687

In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.

H03K3/00

Circuits for generating electric pulses

Monostable, bistable or multistable circuits H03K4/00 takes precedence; for digital function generators in computers G06F1/02

H03K3/01

Details

H03K3/011

Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature

to maintain energy constant H03K3/015

H03K3/012

Modifications of generator to improve response time or to decrease power consumption

H03K3/013

Modifications of generator to prevent operation by noise or interference

H03K3/014

Modifications of generator to ensure starting of oscillations

H03K3/015

Modifications of generator to maintain energy constant

H03K3/017

Adjustment of width or dutycycle of pulses pulse width modulation H03K7/08

; to maintain energy constant H03K3/015

H03K3/02

Generators characterised by the type of circuit or by the means used for producing pulses H03K3/64 - H03K3/84 take precedence

H03K3/021

by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT

H03K3/023

by the use of differential amplifiers or comparators, with internal or external positive feedback

H03K3/0231

Astable circuits

H03K3/0315 takes precedence

H03K3/02315

Stabilisation of output, e.g. using crystal

H03K3/0232

Monostable circuits

H03K3/0233

Bistable circuits

H03K3/02332

of the master-slave type

H03K3/02335

provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00

H03K3/02337

Bistables with hysteresis, e.g. Schmitt trigger non-regenerative amplitude discriminators G01R19/165

H03K3/0234

Multistable circuits

H03K3/027

by the use of logic circuits, with internal or external positive feedback

H03K3/03

Astable circuits

H03K3/0307

Stabilisation of output, e.g. using crystal

H03K3/0315

Ring oscillators

H03K3/0322

with differential cells

H03K3/033

Monostable circuits

H03K3/037

Bistable circuits

H03K3/0372

of the master-slave type

H03K3/0375

H03K3/0377

Bistables with hysteresis, e.g. Schmitt trigger non-regenerative amplitude discriminators G01R19/165

H03K3/038

Multistable circuits

H03K3/04

by the use, as active elements, of vacuum tubes only, with positive feedback H03K3/023, H03K3/027 take precedence

H03K3/05

using means other than a transformer for feedback

H03K3/06

using at least two tubes so coupled that the input of one is derived from the output of another, e.g. multivibrator

H03K3/08

astable

H03K3/09

Stabilisation of output

H03K3/10

monostable

H03K3/12

bistable

H03K3/13

Bistables with hysteresis, e.g. Schmitt trigger

H03K3/14

multistable

H03K3/16

using a transformer for feedback, e.g. blocking oscillator with saturable core

H03K3/22

specially adapted for amplitude comparison, i.e. Multiar

H03K3/26

by the use, as active elements, of bipolar transistors with internal or external positive feedback H03K3/023, H03K3/027 take precedence

H03K3/28

using means other than a transformer for feedback

H03K3/281

using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator

H03K3/282

astable

H03K3/2821

Emitters connected to one another by using a capacitor

H03K3/2823

using two active transistor of the same conductivity type H03K3/2821 takes precedence

H03K3/2825

in an asymmetrical circuit configuration

H03K3/2826

using two active transistors of the complementary type H03K3/2821 take precedence

H03K3/2828

in an asymmetrical circuit configuration

H03K3/283

Stabilisation of output

, e.g. using crystal

H03K3/284

monostable

H03K3/286

bistable

H03K3/2865

ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00

H03K3/287

using additional transistors in the feedback circuit H03K3/289 takes precedence

H03K3/288

using additional transistors in the input circuit H03K3/289 takes precedence

H03K3/2885

the input circuit having a differential configuration

H03K3/289

of the master-slave type

H03K3/2893

Bistables with hysteresis, e.g. Schmitt trigger

H03K3/2897

with an input circuit of differential configuration

H03K3/29

multistable

H03K3/30

using a transformer for feedback, e.g. blocking oscillator

H03K3/313

by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic

H03K3/315

the devices being tunnel diodes

H03K3/33

by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect

H03K3/335

by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect

H03K3/35

by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region H03K3/023, H03K3/027 take precedence

H03K3/351

the devices being unijunction transistors H03K3/352 takes precedence

H03K3/352

the devices being thyristors

H03K3/3525

Anode gate thyristors or programmable unijunction transistors

H03K3/353

by the use, as active elements, of field-effect transistors with internal or external positive feedback H03K3/023, H03K3/027 take precedence

H03K3/354

Astable circuits

H03K3/3545

Stabilisation of output, e.g. using crystal

H03K3/355

Monostable circuits

H03K3/356

Bistable circuits

H03K3/356008

H03K3/356017

using additional transistors in the input circuit H03K3/356104, H03K3/3562 take precedence

H03K3/356026

with synchronous operation H03K3/356034, H03K3/356052 take precedence

H03K3/356034

the input circuit having a differential configuration

H03K3/356043

with synchronous operation

H03K3/356052

using pass gates

H03K3/35606

with synchronous operation

H03K3/356069

using additional transistors in the feedback circuit H03K3/356104, H03K3/3562 take precedence

H03K3/356078

with synchronous operation

H03K3/356086

with additional means for controlling the main nodes H03K3/356104, H03K3/3562 take precedence

H03K3/356095

with synchronous operation

H03K3/356104

using complementary field-effect transistors H03K3/35625 takes precedence

H03K3/356113

using additional transistors in the input circuit

H03K3/356121

with synchronous operation H03K3/35613, H03K3/356147 take precedence

H03K3/35613

the input circuit having a differential configuration

H03K3/356139

with synchronous operation

H03K3/356147

using pass gates

H03K3/356156

with synchronous operation

H03K3/356165

using additional transistors in the feedback circuit

H03K3/356173

with synchronous operation

H03K3/356182

with additional means for controlling the main nodes

H03K3/356191

with synchronous operation

H03K3/3562

of the master-slave type

H03K3/35625

using complementary field-effect transistors

H03K3/3565

Bistables with hysteresis, e.g. Schmitt trigger

H03K3/3568

Multistable circuits

H03K3/357

by the use, as active elements, of bulk negative resistance devices, e.g. Gunn-effect devices

H03K3/36

by the use, as active elements, of semiconductors, not otherwise provided for

H03K3/37

by the use, as active elements, of gas-filled tubes, e.g. astable trigger circuits H03K3/55 takes precedence

H03K3/38

by the use, as active elements, of superconductive devices

H03K3/40

by the use, as active elements, of electrochemical cells

H03K3/42

by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

H03K3/43

by the use, as active elements, of beam deflection tubes

H03K3/45

by the use, as active elements, of non-linear magnetic or dielectric devices

H03K3/455

using thin films

H03K3/47

the devices being parametrons

H03K3/49

the devices being ferro-resonant

H03K3/51

the devices being multi-aperture magnetic cores, e.g. transfluxors

H03K3/53

by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback H03K3/335 takes precedence

H03K3/537

the switching device being a spark gap

H03K3/543

the switching device being a vacuum tube

H03K3/55

the switching device being a gas-filled tube having a control electrode

H03K3/57

the switching device being a semiconductor device

H03K3/59

by the use of galvano-magnetic devices, e.g. Hall effect devices

H03K3/64

Generators producing trains of pulses, i.e. finite sequences of pulses

H03K3/66

by interrupting the output of a generator

H03K3/70

time intervals between all adjacent pulses of one train being equal

H03K3/72

with means for varying repetition rate of trains

H03K3/78

Generating a single train of pulses having a predetermined pattern, e.g. a predetermined number

H03K3/80

Generating trains of sinusoidal oscillations by keying or interruption of sinusoidal oscillations H03C; for transmission of digital information H04L

H03K3/84

Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators

H03K3/86

Generating pulses by means of delay lines and not covered by the preceding subgroups

H03K4/00

Generating pulses having essentially a finite slope or stepped portions

H03K4/02

having stepped portions, e.g. staircase waveform

H03K4/023

by repetitive charge or discharge of a capacitor, analogue generators

H03K4/026

using digital techniques

H03K4/04

having parabolic shape

H03K4/06

having triangular shape

H03K4/063

high voltage - or current generators

H03K4/066

using a Miller-integrator H03K4/08 takes precedence

H03K4/08

having sawtooth shape

H03K4/085

Protection of sawtooth generators

H03K4/10

using as active elements vacuum tubes only

H03K4/12

in which a sawtooth voltage is produced across a capacitor

H03K4/14

using two tubes so coupled that the input of each one is derived from the output of the other, e.g. multivibrator

H03K4/16

using a single tube with positive feedback through transformer, e.g. blocking oscillator

H03K4/18

using a single tube exhibiting negative resistance between two of its electrodes, e.g. transitron, dynatron

H03K4/20

using a tube with negative feedback by capacitor, e.g. Miller integrator

H03K4/22

combined with transitron, e.g. phantastron, sanatron

H03K4/24

Boot-strap generators

H03K4/26

in which a sawtooth current is produced through an inductor

H03K4/28

using a tube operating as a switching device

H03K4/32

combined with means for generating the driving pulses

H03K4/34

using a single tube with positive feedback through a transformer

H03K4/36

using a single tube exhibiting negative resistance between two of its electrodes, e.g. transitron, dynatron

H03K4/38

combined with Miller integrator

H03K4/39

using a tube operating as an amplifier

H03K4/41

with negative feedback through a capacitor, e.g. Miller-integrator

H03K4/43

combined with means for generating the driving pulses

H03K4/48

using as active elements semiconductor devices H03K4/787 - H03K4/84 take precedence

H03K4/50

in which a sawtooth voltage is produced across a capacitor

H03K4/501

the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator

H03K4/502

the capacitor being charged from a constant-current source

H03K4/52

using two semiconductor devices so coupled that the input of each one is derived from the output of the other, e.g. multivibrator

H03K4/54

using a single semiconductor device with positive feedback through a transformer, e.g. blocking oscillator

H03K4/56

using a semiconductor device with negative feedback through a capacitor, e.g. Miller integrator

H03K4/58

Boot-strap generators

H03K4/60

in which a sawtooth current is produced through an inductor

H03K4/62

using a semiconductor device operating as a switching device

H03K4/625

using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode

H03K4/64

combined with means for generating the driving pulses

H03K4/625 takes precedence

H03K4/66

using a single device with positive feedback, e.g. blocking oscillator

H03K4/68

Generators in which the switching device is conducting during the fly-back part of the cycle

H03K4/69

using a semiconductor device operating as an amplifier

H03K4/693

operating in push-pull, e.g. class B H03K4/696 takes precedence

H03K4/696

using means for reducing power dissipation or for shortening the flyback time, e.g. applying a higher voltage during flyback time

H03K4/71

with negative feedback through a capacitor, e.g. Miller-integrator

H03K4/72

combined with means for generating the driving pulses

H03K4/725

Push-pull amplifier circuits

H03K4/787

using as active elements semiconductor devices with two electrodes and exhibiting a negative resistance characteristic

H03K4/793

using tunnel diodes

H03K4/80

using as active elements multi-layer diodes

H03K4/83

using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region

H03K4/835

using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode

H03K4/84

Generators in which the semiconductor device is conducting during the fly-back part of the cycle

H03K4/835 takes precedence

H03K4/86

using as active elements gas-filled tubes

or spark-gaps

H03K4/88

using as active elements electrochemical cells

or galvano-magnetic or photo-electric elements

H03K4/90

Linearisation of ramp modifying slopes of pulses H03K6/04; scanning distortion correction for television receivers H04N3/23

Synchronisation of pulses

H03K4/92

having a waveform comprising a portion of a sinusoid generating sinusoidal oscillations H03B

H03K4/94

having trapezoidal shape

H03K5/00

Manipulating of pulses not covered by one of the other main groups of this subclass circuits with regenerative action H03K3/00, H03K4/00; by the use of non-linear magnetic or dielectric devices H03K3/45

In this group, the input signals are of the pulse type.

H03K5/00006

Changing the frequency modulating pulses H03K7/00; frequency dividers H03K21/00 - H03K29/00; additive or subtractive mixing of two pulse rates into one G06F7/605; pulse rate dividers G06F7/68

H03K2005/00013

Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse

H03K2005/00019

Variable delay

H03K2005/00026

controlled by an analog electrical signal, e.g. obtained after conversion by a D/A converter

H03K2005/00032

Dc control of switching transistors

H03K2005/00039

having four transistors serially

H03K2005/00045

Dc voltage control of a capacitor or of the coupling of a capacitor as a load

H03K2005/00052

by mixing the outputs of fixed delayed signals with each other or with the input signal

H03K2005/00058

controlled by a digital setting

H03K2005/00065

by current control, e.g. by parallel current control transistors

H03K2005/00071

by adding capacitance as a load

H03K2005/00078

Fixed delay

H03K2005/00084

by trimming or adjusting the delay

H03K2005/00091

using fuse links

H03K2005/00097

Avoiding variations of delay using feedback, e.g. controlled by a PLL

H03K2005/00104

using a reference signal, e.g. a reference clock

H03K2005/0011

using a separate time interval to calibrate the delay

H03K2005/00117

Avoiding variations of delay due to line termination

H03K2005/00123

Avoiding variations of delay due to integration tolerances

H03K2005/0013

Avoiding variations of delay due to power supply

H03K2005/00136

Avoiding asymmetry of delay for leading or trailing edge; Avoiding variations of delay due to threshold

H03K2005/00143

Avoiding variations of delay due to temperature

H03K2005/0015

Layout of the delay element

H03K2005/00156

using opamps, comparators, voltage multipliers or other analog building blocks

H03K2005/00163

using bipolar transistors

H03K2005/00169

using current mirrors

H03K2005/00176

using differential stages

H03K2005/00182

using constant current sources

H03K2005/00189

in BiCMOS technology

H03K2005/00195

using FET's

H03K2005/00202

using current mirrors

H03K2005/00208

using differential stages

H03K2005/00215

where the conduction path of multiple FET's is in parallel or in series, all having the same gate control

H03K2005/00221

where the conduction path of the different output FET's is connected in parallel with different gate control, e.g. having different sizes or thresholds, or coupled through different resistors

H03K2005/00228

having complementary input and output signals

H03K2005/00234

using circuits having two logic levels

H03K2005/00241

using shift registers

H03K2005/00247

using counters

H03K2005/00254

using microprocessors

H03K2005/0026

using memories or FIFO's

H03K2005/00267

using D/A or A/D converters

H03K2005/00273

using digital comparators

H03K2005/0028

using varicaps, e.g. gate capacity of a FET with specially defined threshold, as delaying capacitors

H03K2005/00286

Phase shifter, i.e. the delay between the output and input pulse is dependent on the frequency, and such that a phase difference is obtained independent of the frequency

H03K2005/00293

Output pulse is a delayed pulse issued after a rising or a falling edge, the length of the output pulse not being in relation with the length of the input triggering pulse

H03K5/003

Changing the DC level reinsertion of dc component of a television signal H04N5/16

H03K5/007

Base line stabilisation thresholding H03K5/08

H03K5/01

Shaping pulses discrimination against noise or interference H03K5/125

H03K5/02

by amplifying H03K5/04 takes precedence

H03K5/023

using field effect transistors

H03K5/026

with a bidirectional operation

H03K5/04

by increasing duration

by decreasing duration

H03K5/05

by the use of clock signals or other time reference signals

H03K5/06

by the use of delay lines or other analogue delay elements

H03K5/065

using dispersive delay lines

H03K5/07

by the use of resonant circuits

H03K5/08

by limiting

by thresholding

by slicing, i.e. combined limiting and thresholding H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30

H03K5/082

with an adaptive threshold

H03K5/084

modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal

H03K5/086

generated by feedback

H03K5/088

modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal

H03K5/12

by steepening leading or trailing edges

H03K5/125

Discriminating pulses measuring characteristics of individual pulses G01R29/02; separation of synchronising signals in television systems H04N5/08

H03K5/1252

Suppression or limitation of noise or interference specially adapted for transmission systems H04B15/00, H04L25/08

H03K5/1254

specially adapted for pulses generated by closure of switches, i.e. anti-bouncing devices debouncing circuits for electronic time-pieces G04G5/00

H03K5/13

Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals

H03K5/131

Digitally controlled

H03K5/133

using a chain of active delay devices

H03K5/134

with field-effect transistors

H03K5/135

by the use of time reference signals, e.g. clock signals

H03K5/14

by the use of delay lines H03K5/133 takes precedence

H03K5/145

by the use of resonant circuits

H03K5/15

Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors distributing, switching or gating arrangements H03K17/00

H03K5/15006

with two programmable outputs

H03K5/15013

with more than two outputs

H03K5/1502

programmable

H03K5/15026

with asynchronously driven series connected output stages

H03K5/15033

using a chain of bistable devices

H03K5/1504

using a chain of active delay devices H03K5/15053 takes precedence

H03K5/15046

using a tapped delay line

H03K5/15053

using a chain of monostable devices

H03K5/1506

with parallel driven output stages; with synchronously driven series connected output stages

H03K5/15066

using bistable devices H03K5/15093 takes precedence

H03K5/15073

using a plurality of comparators

H03K5/1508

using a plurality of delay lines

H03K5/15086

using a plurality of monostables devices

H03K5/15093

using devices arranged in a shift register

H03K5/151

with two complementary outputs

H03K5/1515

non-overlapping

H03K5/153

Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant switching at zero crossing H03K17/13

H03K5/1532

Peak detectors measuring characteristics of individual pulses G01R29/02

H03K5/1534

Transition or edge detectors

H03K5/1536

Zero-crossing detectors in measuring circuits G01R19/175

H03K5/156

Arrangements in which a continuous pulse train is transformed into a train having a desired pattern

H03K5/1565

the output pulses having a constant duty cycle

H03K5/159

Applications of delay lines not covered by the preceding subgroups

H03K5/19

Monitoring patterns of pulse trains indicating amplitude G01R19/00; indicating frequency G01R23/00; measuring characteristics of individual pulses G01R29/02

H03K5/22

Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral indicating phase difference of two cyclic pulse trains G01R25/00

H03K5/24

the characteristic being amplitude

H03K5/2409

using bipolar transistors H03K5/2436 takes precedence

H03K5/2418

with at least one differential stage

H03K5/2427

using clock signals

H03K5/2436

using a combination of bipolar and field-effect transistors

H03K5/2445

with at least one differential stage

H03K5/2454

using clock signals

H03K5/2463

using diodes

H03K5/2472

using field effect transistors H03K5/2436 takes precedence

H03K5/2481

with at least one differential stage

H03K5/249

using clock signals

H03K5/26

the characteristic being duration, interval, position, frequency, or sequence

H03K6/00

Manipulating pulses having a finite slope and not covered by one of the other main groups of this subclass circuits with regenerative action H03K4/00

H03K6/02

Amplifying pulses

H03K6/04

Modifying slopes of pulses, e.g. S-correction S-correction in television H04N3/23

H03K7/00

Modulating pulses with a continuously-variable modulating signal

H03K7/02

Amplitude modulation, i.e. PAM

H03K7/04

Position modulation, i.e. PPM

H03K7/06

Frequency or rate modulation, i.e. PFM or PRM

H03K7/08

Duration or width modulation

Duty cycle modulation

H03K7/10

Combined modulation, e.g. rate modulation and amplitude modulation

H03K9/00

Demodulating pulses which have been modulated with a continuously-variable signal

H03K9/02

of amplitude-modulated pulses

H03K9/04

of position-modulated pulses

H03K9/06

of frequency- or rate-modulated pulses

H03K9/08

of duration- or width-mudulated pulses

or of duty-cycle modulated pulses

H03K9/10

of pulses having combined modulation

H03K11/00

Transforming types of modulations, e.g. position-modulated pulses into duration-modulated pulses

H03K12/00

Producing pulses by distorting or combining sinusoidal waveforms shaping pulses H03K5/01; combining sinewaves using elements operating in a non-switching manner H03B21/00

H03K17/00

Electronic switching or gating, i.e. not by contact-making and –breaking gated amplifiers H03F3/72; switching arrangements for exchange systems using static devices H04Q3/52

H03K17/002

Switching arrangements with several input- or output terminals code converters H03M5/00, H03M7/00

H03K17/005

with several inputs only

H03K17/007

with several outputs only

H03K17/04

Modifications for accelerating switching

H03K17/0403

in thyristor switches

H03K17/0406

in composite switches

H03K17/041

without feedback from the output circuit to the control circuit

H03K17/0403, H03K17/0406 take precedence

H03K17/04106

in field-effect transistor switches H03K17/0412, H03K17/0416 take precedence

H03K17/04113

in bipolar transistor switches H03K17/0412, H03K17/0416 take precedence

H03K17/0412

by measures taken in the control circuit

H03K17/04123

in field-effect transistor switches

H03K17/04126

in bipolar transistor switches

H03K17/0414

Anti-saturation measures

H03K17/0416

by measures taken in the output circuit

H03K17/04163

in field-effect transistor switches

H03K17/04166

in bipolar transistor switches

H03K17/042

by feedback from the output circuit to the control circuit

H03K17/0403, H03K17/0406 take precedence

H03K17/04206

in field-effect transistor switches

H03K17/04213

in bipolar transistor switches

H03K17/0422

Anti-saturation measures

H03K17/0424

by the use of a transformer

H03K17/06

Modifications for ensuring a fully conducting state

H03K17/063

in field-effect transistor switches

H03K2017/066

Maximizing the OFF-resistance instead of minimizing the ON-resistance

H03K17/08

Modifications for protecting switching circuit against overcurrent or overvoltage

H03K2017/0803

against radiation hardening

H03K2017/0806

against excessive temperature

H03K17/081

without feedback from the output circuit to the control circuit

H03K17/08104

in field-effect transistor switches H03K17/0812, H03K17/0814 take precedence

H03K17/08108

in thyristor switches H03K17/0812, H03K17/0814 take precedence

H03K17/08112

in bipolar transistor switches H03K17/0812, H03K17/0814 take precedence

H03K17/08116

in composite switches H03K17/0812, H03K17/0814 take precedence

H03K17/0812

by measures taken in the control circuit

H03K17/08122

in field-effect transistor switches

H03K17/08124

in thyristor switches

H03K17/08126

in bipolar transitor switches

H03K17/08128

in composite switches

H03K17/0814

by measures taken in the output circuit

H03K17/08142

in field-effect transistor switches

H03K17/08144

in thyristor switches

H03K17/08146

in bipolar transistor switches

H03K17/08148

in composite switches

H03K17/082

by feedback from the output to the control circuit

H03K17/0822

in field-effect transistor switches

H03K17/0824

in thyristor switches

H03K17/0826

in bipolar transistor switches

H03K17/0828

in composite switches

H03K17/10

Modifications for increasing the maximum permissible switched voltage

H03K17/102

in field-effect transistor switches

H03K17/105

in thyristor switches

H03K17/107

in composite switches

H03K17/12

Modifications for increasing the maximum permissible switched current

H03K17/122

in field-effect transistor switches

H03K17/125

in thyristor switches

H03K17/127

in composite switches

H03K17/13

Modifications for switching at zero crossing generating an impulse at zero crossing H03K5/1536

H03K17/133

in field-effect transistor switches

H03K17/136

in thyristor switches

H03K17/14

Modifications for compensating variations of physical values, e.g. of temperature

H03K17/145

in field-effect transistor switches

H03K17/16

Modifications for eliminating interference voltages or currents

H03K17/161

in field-effect transistor switches

H03K17/162

without feedback from the output circuit to the control circuit

H03K17/163

Soft switching

H03K17/164

using parallel switching arrangements

H03K17/165

by feedback from the output circuit to the control circuit

H03K17/166

Soft switching

H03K17/167

using parallel switching arrangements

H03K17/168

in composite switches

H03K17/18

Modifications for indicating state of switch

H03K17/20

Modifications for resetting core switching units to a predetermined state

H03K17/22

Modifications for ensuring a predetermined initial state when the supply voltage has been applied bi-stable generators H03K3/12

H03K17/223

in field-effect transistor switches

H03K2017/226

in bipolar transistor switches

H03K17/24

Storing the actual state when the supply voltage fails

H03K17/26

Modifications for temporary blocking after receipt of control pulses

H03K17/28

Modifications for introducing a time delay before switching modifications to provide a choice of time-intervals for executing more than one switching action H03K17/296

H03K17/284

in field effect transistor switches

H03K17/288

in tube switches

H03K17/292

in thyristor, unijunction transistor or programmable unijunction transistor switches

H03K17/296

Time-programme switches providing a choice of time-intervals for executing more than one switching action and automatically terminating their operation after the programme is completed electronic clocks comprising means to be operated at preselected times or after preselected time-intervals G04G15/00

H03K17/30

Modifications for providing a predetermined threshold before switching shaping pulses by thresholding H03K5/08

H03K17/302

in field-effect transistor switches

H03K17/305

in thyristor switches

H03K2017/307

circuits simulating a diode, e.g. threshold zero

H03K17/51

characterised by the components used H03K17/04 - H03K17/30, H03K17/94 take precedence

H03K2017/515

Mechanical switches; Electronic switches controlling mechanical switches, e.g. relais

H03K17/52

by the use, as active elements, of gas-filled tubes

H03K17/54

by the use, as active elements of vacuum tubes using diodes H03K17/74

H03K17/545

using microengineered devices, e.g. field emission devices

H03K17/56

by the use, as active elements, of semiconductor devices using diodes H03K17/74

H03K17/567

Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

H03K17/58

the devices being tunnel diodes

H03K17/60

the devices being bipolar transistors bipolar transistors having four or more electrodes H03K17/72

H03K17/601

using transformer coupling H03K17/61 takes precedence

H03K17/602

in integrated circuits

H03K17/603

with coupled emitters

H03K17/605

with galvanic isolation between the control circuit and the output circuit H03K17/78 takes precedence

H03K17/61

using transformer coupling

H03K17/615

in a Darlington configuration

H03K17/62

Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

H03K17/6207

without selecting means H03K17/6242 - H03K17/6285 take precedence

H03K17/6214

using current steering means

H03K17/6221

combined with selecting means H03K17/6242 - H03K17/6285 take precedence

H03K17/6228

using current steering means

H03K17/6235

with storage of control signal

H03K17/6242

with several inputs only and without selecting means

H03K17/625

using current steering means

H03K17/6257

with several inputs only combined with selecting means

H03K17/6264

using current steering means

H03K17/6271

with several outputs only and without selecting means

H03K17/6278

using current steering means

H03K17/6285

with several outputs only combined with selecting means

H03K17/6292

using current steering means

H03K17/64

having inductive loads

H03K17/66

Switching arrangements for passing the current in either direction at will

Switching arrangements for reversing the current at will

H03K17/661

connected to both load terminals

H03K17/662

each output circuit comprising more than one controlled bipolar transistor

H03K17/663

using complementary bipolar transistors

H03K17/664

in a symmetrical configuration

H03K17/665

connected to one load terminal only

H03K17/666

the output circuit comprising more than one controlled bipolar transistor

H03K17/667

using complementary bipolar transistors

H03K17/668

in a symmetrical configuration

H03K17/68

specially adapted for switching ac currents or voltages

H03K17/687

the devices being field-effect transistors

H03K17/6871

the output circuit comprising more than one controlled field-effect transistor

H03K17/6872

using complementary field-effect transistors

H03K17/6874

in a symmetrical configuration

H03K2017/6875

using self-conductive, depletion FETs

H03K17/6877

the control circuit comprising active elements different from those used in the output circuit

H03K2017/6878

using multi-gate field-effect transistors

H03K17/689

with galvanic isolation between the control circuit and the output circuit H03K17/78 takes precedence

H03K17/6895

using acoustic means

H03K17/691

using transformer coupling

H03K17/693

Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

H03K17/70

the devices having only two electrodes and exhibiting negative resistance the devices being tunnel diodes H03K17/58

H03K17/72

having more than two PN junctions

having more than three electrodes

having more than one electrode connected to the same conductivity region

H03K17/722

with galvanic isolation between the control circuit and the output circuit H03K17/78 takes precedence

H03K17/7225

using acoustic means

H03K17/723

using transformer coupling

H03K17/725

for ac voltages or currents H03K17/722, H03K17/735 take precedence

H03K17/73

for dc voltages or currents H03K17/722, H03K17/735 take precedence

H03K17/731

with inductive load

H03K17/732

Measures for enabling turn-off

H03K17/735

Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors H03K17/722 takes precedence; logic circuits H03K19/00; code converters H03M5/00, H03M7/00

H03K17/74

by the use, as active elements, of diodes by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70

H03K17/76

Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

H03K17/78

using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

H03K17/785

controlling field-effect transistor switches

H03K17/79

controlling

bipolar

semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

H03K17/795

controlling bipolar transistors

H03K17/7955

using phototransistors

H03K17/80

using non-linear magnetic devices

using non-linear dielectric devices

H03K17/95, H03K17/97 take precedence

H03K17/81

Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

H03K17/82

the devices being transfluxors

H03K17/84

the devices being thin-film devices

H03K17/86

the devices being twistors

H03K17/88

By the use, as active elements, of beam-deflection tubes

H03K17/90

by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices H03K17/95, H03K17/97 take precedence

H03K17/92

by the use, as active elements, of superconductive devices

H03K17/94

characterised by the way in which the control signals are generated

H03K17/941

using an optical detector H03K17/968 takes precedence

H03K17/943

using a plurality of optical emitters or detectors, e.g. keyboard

H03K17/945

Proximity switches H03K17/96 takes precedence

H03K2017/9455

constructional details of proximity switches using a magnetic detector H03K17/9505

H03K17/95

using a magnetic detector

H03K17/9502

Measures for increasing reliability

H03K17/9505

Constructional details

H03K2017/9507

with illumination

H03K17/951

Measures for supplying operating voltage to the detector circuit

H03K17/9512

using digital techniques

H03K17/9515

using non-linear magnetic devices

H03K17/9517

using galvanomagnetic devices

H03K17/952

using inductive coils

H03K17/9522

with a galvanically isolated probe

H03K17/9525

controlled by an oscillatory signal H03K17/9537 takes precedence

H03K2017/9527

Details of coils in the emitter or receiver; Magnetic detector comprising emitting and receiving coils

H03K17/953

forming part of an oscillator H03K17/9537 takes precedence

H03K17/9532

with variable frequency

H03K17/9535

with variable amplitude

H03K17/9537

in a resonant circuit

H03K17/954

controlled by an oscillatory signal

H03K17/9542

forming part of an oscillator

H03K17/9545

with variable frequency

H03K17/9547

with variable amplitude

H03K17/955

using a capacitive detector

H03K17/96

Touch switches specially adapted for electronic time-pieces with no moving parts G04G21/08

H03K2017/9602

characterised by the type or shape of the sensing electrodes

H03K2017/9604

characterised by the number of electrodes

H03K2017/9606

using one electrode only per touch switch

H03K2017/9609

where the electrode is the object to be switched

H03K2017/9611

where the electrode is a plant

H03K2017/9613

using two electrodes per touch switch

H03K2017/9615

using three electrodes per touch switch

H03K17/9618

using a plurality of detectors, e.g. keyboard

H03K17/962

Capacitive touch switches

H03K17/9622

using a plurality of detectors, e.g. keyboard

H03K17/9625

using a force resistance transducer

H03K17/9627

Optical touch switches

H03K17/9629

using a plurality of detectors, e.g. keyboard

H03K17/9631

using a light source as part of the switch

H03K2017/9634

using organic light emitting devices, e.g. light emitting polymer [OEP] or OLED

H03K17/9636

using a pulsed light source

H03K17/9638

using a light guide

H03K17/964

Piezo-electric touch switches

H03K17/9643

using a plurality of detectors, e.g. keyboard

H03K17/9645

Resistive touch switches

H03K17/9647

using a plurality of detectors, e.g. keyboard

H03K17/965

Switches controlled by moving an element forming part of the switch

H03K17/967

having a plurality of control members, e.g. keyboard H03K17/969, H03K17/972, H03K17/98 take precedence

H03K17/968

using opto-electronic devices

H03K17/969

having a plurality of control members, e.g. keyboard

H03K17/97

using a magnetic movable element

H03K2017/9706

Inductive element

H03K2017/9713

Multiposition, e.g. involving comparison with different thresholds

H03K17/972

having a plurality of control members, e.g. keyboard

H03K17/975

using a capacitive movable element

H03K2017/9755

Ohmic switch;

H03K17/98

having a plurality of control members, e.g. keyboard

H03K19/00

Logic circuits, i.e. having at least two inputs acting on one output circuits for computer systems using fuzzy logic G06N7/02

Inverting circuits

H03K19/0002

Multistate logic H03K19/02 takes precedence

H03K19/0005

Modifications of input or output impedance

H03K19/0008

Arrangements for reducing power consumption

H03K19/001

in bipolar transistor circuits

H03K19/0013

in field effect transistor circuits

H03K19/0016

by using a control or a clock signal, e.g. in order to apply power supply

H03K19/0019

by energy recovery or adiabatic operation

H03K19/0021

Modifications of threshold for electronic switching or gating H03K17/30

H03K19/0024

in bipolar transistor circuits

H03K19/0027

in field effect transistor circuits

H03K19/003

Modifications for increasing the reliability

for protection

H03K19/00307

in bipolar transistor circuits

H03K19/00315

in field-effect transistor circuits

H03K19/00323

Delay compensation

H03K19/0033

Radiation hardening

H03K19/00338

In field effect transistor circuits

H03K19/00346

Modifications for eliminating interference or parasitic voltages or currents

H03K19/00353

in bipolar transistor circuits

H03K19/00361

in field effect transistor circuits

H03K19/00369

Modifications for compensating variations of temperature, supply voltage or other physical parameters

H03K19/00376

in bipolar transistor circuits

H03K19/00384

in field effect transistor circuits

H03K19/00392

by circuit redundancy H03K19/0075 takes precedence

H03K19/007

Fail-safe circuits

H03K19/0075

by using two redundant chains

H03K19/01

Modifications for accelerating switching

H03K19/013

in bipolar transistor circuits

H03K19/0133

by bootstrapping, i.e. by positive feed-back

H03K19/0136

by means of a pull-up or down element

H03K19/017

in field-effect transistor circuits

H03K19/01707

in asynchronous circuits

H03K19/01714

by bootstrapping, i.e. by positive feed-back

H03K19/01721

by means of a pull-up or down element

H03K19/01728

in synchronous circuits, i.e. by using clock signals

H03K19/01735

by bootstrapping, i.e. by positive feed-back

H03K19/01742

by means of a pull-up or down element

H03K19/0175

Coupling arrangements

Interface arrangements interface arrangements for digital computers G06F3/00, G06F13/00

H03K19/017509

Interface arrangements

H03K19/017518

using a combination of bipolar and field effect transistors [BIFET]

H03K19/017527

with at least one differential stage

H03K19/017536

using opto-electronic devices

H03K19/017545

Coupling arrangements; Impedance matching circuits

H03K19/017554

using a combination of bipolar and field effect transistors [BIFET]

H03K19/017563

with at least one differential stage

H03K19/017572

using opto-electronic devices

H03K19/017581

programmable

H03K19/01759

with a bidirectional operation

H03K19/018

using bipolar transistors only

H03K19/01806

Interface arrangements

H03K19/01812

with at least one differential stage

H03K19/01818

for integrated injection logic (I2L)

H03K19/01825

Coupling arrangements, impedance matching circuits

H03K19/01831

with at least one differential stage

H03K19/01837

programmable

H03K19/01843

with a bidirectional operation

H03K19/0185

using field effect transistors only

H03K19/018507

Interface arrangements

H03K19/018514

with at least one differential stage H03K19/018528 and H03K19/018542 take precedence

H03K19/018521

of complementary type, e.g. CMOS

H03K19/018528

with at least one differential stage

H03K19/018535

of Schottky barrier type [MESFET]

H03K19/018542

with at least one differential stage

H03K19/01855

synchronous, i.e. using clock signals

H03K19/018557

Coupling arrangements; Impedance matching circuits

H03K19/018564

with at least one differential stage H03K19/018578 takes precedence

H03K19/018571

of complementary type, e.g. CMOS

H03K19/018578

with at least one differential stage

H03K19/018585

programmable

H03K19/018592

with a bidirectional operation

H03K19/02

using specified components

H03K19/0005 - H03K19/0021

, H03K19/003 - H03K19/0175 take precedence

H03K19/04

using gas-filled tubes

H03K19/06

using vacuum tubes using diode rectifiers H03K19/12

H03K19/08

using semiconductor devices H03K19/173 takes precedence; wherein the semiconductor devices are only diode rectifiers H03K19/12

H03K19/0806

using charge transfer devices (DTC, CCD)

H03K19/0813

Threshold logic

H03K19/082

using bipolar transistors

H03K19/0823

Multistate logic

H03K19/0826

one of the states being the high impedance or floating state

H03K19/084

Diode-transistor logic

H03K19/0843

Complementary transistor logic [CTL]

H03K19/0846

Schottky transistor logic [STL]

H03K19/086

Emitter coupled logic

H03K19/0863

Emitter function logic [EFL]; Base coupled logic [BCL]

H03K19/0866

Stacked emitter coupled logic H03K19/1738 takes precedence

H03K19/088

Transistor-transistor logic

H03K19/09

Resistor-transistor logic

H03K19/091

Integrated injection logic or merged transistor logic

H03K19/0912

Static induction logic [STIL] when the logic function is fullfilled by a fet H03K19/09414

H03K19/0915

Integrated schottky logic [ISL]

H03K19/0917

Multistate logic

H03K19/094

using field-effect transistors

H03K19/09403

using junction field-effect transistors H03K19/096 takes precedence

H03K19/09407

of the same canal type

H03K19/0941

of complementary type

H03K19/09414

with gate injection or static induction [STIL] H03K19/0912 takes precedence

H03K19/09418

in combination with bipolar transistors [BIFET]

H03K19/09421

Diode field-effect transistor logic H03K19/0956, H03K19/096 take precedence

H03K19/09425

Multistate logic H03K19/096 takes precedence

H03K19/09429

one of the states being the high impedance or floating state

H03K19/09432

with coupled sources or source coupled logic H03K19/096 takes precedence

H03K19/09436

Source coupled field-effect logic [SCFL]

H03K19/0944

using MOSFET

or insulated gate field-effect transistors, i.e. IGFET

H03K19/096 takes precedence

H03K19/09441

of the same canal type

H03K19/09443

using a combination of enhancement and depletion transistors

H03K19/09445

with active depletion transistors

H03K19/09446

using only depletion transistors

H03K19/09448

in combination with bipolar transistors [BIMOS]

H03K19/0948

using CMOS

or complementary insulated gate field-effect transistors

H03K19/09482

using a combination of enhancement and depletion transistors

H03K19/09485

with active depletion transistors

H03K19/09487

using only depletion transistors

H03K19/0952

using Schottky type FET

MESFET

H03K19/09421, H03K19/09432

, H03K19/096 take precedence

H03K19/0956

Schottky diode FET logic H03K19/096 takes precedence

H03K19/096

Synchronous circuits, i.e. using clock signals

H03K19/01728, H03K19/01855 take precedence

H03K19/0963

using transistors of complementary type H03K19/0966 takes precedence

H03K19/0966

Self-timed logic

H03K19/098

using thyristors

H03K19/10

using tunnel diodes

H03K19/12

using diode rectifiers

H03K19/14

using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled optical logic elements G02F3/00

H03K19/16

using saturable magnetic devices

H03K19/162

using parametrons

H03K19/164

using ferro-resonant devices

H03K19/166

using transfluxors

H03K19/168

using thin-film devices

H03K19/17

using twistors

H03K19/173

using elementary logic circuits as components

H03K19/1731

Optimisation thereof

H03K19/1732

by limitation or reduction of the pin/gate ratio for data-processing equipment G06F1/22

H03K19/1733

Controllable logic circuits H03K19/177 takes precedence

H03K19/1735

by wiring, e.g. uncommitted logic arrays

H03K19/1736

in which the wiring can be modified

H03K19/1737

using multiplexers H03K19/1738 takes precedence

H03K19/1738

using cascode switch logic [CSL] or cascode emitter coupled logic [CECL]

H03K19/177

arranged in matrix form

H03K19/17704

the logic functions being realised by the interconnection of rows and columns

H03K19/17708

using an AND matrix followed by an OR matrix, i.e. programmable logic arrays

H03K19/17712

one of the matrices at least being reprogrammable

H03K19/17716

with synchronous operation, i.e. using clock signals, e.g. of I/O or coupling register H03K19/17712 takes precedence

H03K19/1772

with synchronous operation of at least one of the logical matrixes

H03K19/17724

Structural details of logic blocks

H03K19/17728

Reconfigurable logic blocks, e.g. lookup tables

H03K19/17732

Macroblocks

H03K19/17736

Structural details of routing resources

H03K19/1774

for global signals, e.g. clock, reset

H03K19/17744

for input/output signals

H03K19/17748

Structural details of configuration resources

H03K19/17752

for hot reconfiguration

H03K19/17756

for partial configuration or partial reconfiguration

H03K19/17758

for speeding up configuration or reconfiguration

H03K19/1776

for memories

H03K19/17764

for reliability

H03K19/17768

for security

H03K19/17772

for powering on or off

H03K19/1778

Structural details for adapting physical parameters

H03K19/17784

for supply voltage

H03K19/17788

for input/output [I/O] voltages

H03K19/17792

for operating speed

H03K19/17796

for physical disposition of blocks

H03K19/18

using galvano-magnetic devices, e.g. Hall-effect devices

H03K19/185

using dielectric elements with variable dielectric constant, e.g. ferro-electric capacitors

H03K19/19

using ferro-resonant devices

H03K19/195

using superconductive devices

H03K19/1952

with electro-magnetic coupling of the control current

H03K19/1954

with injection of the control current

H03K19/1956

using an inductorless circuit

H03K19/1958

Hybrid configuration, i.e. using electromagnetic coupling and injection of the control current

H03K19/20

characterised by logic function, e.g. AND, OR, NOR, NOT circuits H03K19/003 - H03K19/01 take precedence

H03K19/21

EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input

COINCIDENCE circuits, i.e. giving output only if all input signals are identical

H03K19/212

using bipolar transistors

H03K19/215

using field-effect transistors

H03K19/217

using Schottky type FET [MESFET]

H03K19/23

Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs

H03K21/00

Details of pulse counters or frequency dividers

H03K21/02

Input circuits

H03K21/023

comprising pulse shaping or differentiating circuits

H03K21/026

comprising logic circuits

H03K21/08

Output circuits

H03K21/10

comprising logic circuits

H03K21/12

with parallel read-out

H03K21/14

with series read-out of number stored

H03K21/16

Circuits for carrying over pulses between successive decades

H03K21/17

with field effect transistors

H03K21/18

Circuits for visual indication of the result

H03K21/20

using glow discharge lamps

H03K21/38

Starting, stopping or resetting the counter counters with a base other than a power of two H03K23/48, H03K23/66

H03K21/40

Monitoring

Error detection

Preventing or correcting improper counter operation

H03K21/403

Arrangements for storing the counting state in case of power supply interruption

H03K21/406

Synchronisation of counters

H03K23/00

Pulse counters comprising counting chains

Frequency dividers comprising counting chains H03K29/00 takes precedence

H03K23/001

using elements not covered by groups H03K23/002 and H03K23/74 - H03K23/84

H03K23/002

using semiconductor devices H03K23/78, H03K23/80, H03K23/84 take precedence

H03K23/004

Counters counting in a non-natural counting order, e.g. random counters

H03K23/005

using minimum change code, e.g. Gray Code

H03K23/007

using excess three code

H03K23/008

using biquinary code

H03K23/40

Gating or clocking signals applied to all stages, i.e. synchronous counters

H03K23/74 - H03K23/84 take precedence

H03K23/42

Out-of-phase gating or clocking signals applied to counter stages

H03K23/425

using bistables

H03K23/44

using field-effect transistors

H03K23/46 and H03K23/425 take precedence

H03K23/46

using charge transfer devices, i.e. bucket brigade or charge coupled devices

H03K23/48

with a base or radix other than a power of two H03K23/42 takes precedence

H03K23/483

with a base which is an odd number

H03K23/486

with a base which is a non-integer

H03K23/50

using bi-stable regenerative trigger circuits H03K23/42 - H03K23/48 take precedence

H03K23/502

with a base or a radix other than a power of two H03K23/54 takes precedence

H03K23/505

with a base which is an odd number

H03K23/507

with a base which is a non-integer

H03K23/52

using field-effect transistors

H03K23/54

Ring counters, i.e. feedback shift register counters H03K23/52 takes precedence

H03K23/542

with crossed-couplings, i.e. Johnson counters

H03K23/544

with a base which is an odd number

H03K23/546

with a base which is a non-integer

H03K23/548

Reversible counters

H03K23/56

Reversible counters

H03K23/52

and H03K23/548

take precedence

H03K23/58

Gating or clocking signals not applied to all stages, i.e. asynchronous counters H03K23/74 - H03K23/84 take precedence

H03K23/582

with a base or a radix different of a power of two

H03K23/584

with a base which is an odd number

H03K23/586

with a base which is a non-integer

H03K23/588

Combination of a synchronous and an asynchronous counter

H03K23/60

with field-effect transistors

H03K23/62

reversible

H03K23/64

with a base or radix other than a power of two H03K23/40 - H03K23/62 take precedence

H03K23/66

with a variable counting base, e.g. by presetting or by adding or suppressing pulses

H03K23/662

by adding or suppressing pulses

H03K23/665

by presetting

H03K23/667

by switching the base during a counting cycle

H03K23/68

with a base which is a non-integer

H03K23/70

with a base which is an odd number H03K23/66 takes precedence

H03K23/72

Decade counters H03K23/66 takes precedence

H03K23/74

using relays

H03K23/76

using magnetic cores or ferro-electric capacitors

H03K23/763

using superconductive devices

H03K23/766

using thin-film devices

H03K23/78

using opto-electronic devices

H03K23/80

using semiconductor devices having only two electrodes, e.g. tunnel diode, multi-layer diode

H03K23/82

using gas-filled tubes

H03K23/825

using vacuum tubes

H03K23/84

using thyristors or unijunction transistors

H03K23/86

reversible H03K23/40 - H03K23/84 take precedence

H03K25/00

Pulse counters with step-by-step integration and static storage

Analogous frequency dividers

H03K25/02

comprising charge storage, e.g. capacitor without polarisation hysteresis

H03K25/04

using auxiliary pulse generator triggered by the incoming pulses

H03K25/12

comprising hysteresis storage

H03K27/00

Pulse counters in which pulses are continuously circulated in a closed loop

Analogous frequency dividers feedback shift register counters H03K23/54

H03K29/00

Pulse counters comprising multi-stable elements, e.g. for ternary scale, for decimal scale

Analogous frequency dividers

H03K29/04

using multi-cathode gas discharge tubes

H03K29/06

using beam-type tubes, e.g. magnetrons, cathode-ray tubes

H03K99/00

Subject matter not provided for in other groups of this subclass

H03K2217/00

Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00

H03K2217/0009

AC switches, i.e. delivering AC power to a load

H03K2217/0018

Special modifications or use of the back gate voltage of a FET

H03K2217/0027

Measuring means of, e.g. currents through or voltages across the switch

H03K2217/0036

Means reducing energy consumption

H03K2217/0045

Full bridges, determining the direction of the current through the load

H03K2217/0054

Gating switches, e.g. pass gates

H03K2217/0063

High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load

H03K2217/0072

Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

H03K2217/0081

Power supply means, e.g. to the switch driver

H03K2217/009

Resonant driver circuits

H03K2217/94

characterised by the way in which the control signal is generated

H03K2217/94005

activated by voice or sound

H03K2217/9401

Calibration techniques

H03K2217/94015

Mechanical, e.g. by displacement of a body, a shielding element, or a magnet, in or out of the sensing area

H03K2217/94021

with human activation, e.g. processes requiring or being triggered by human intervention, user-input of digital word or analog voltage

H03K2217/94026

Automatic threshold calibration

e.g. threshold automatically adapts to ambient conditions or follows variation of input

H03K2217/94031

Calibration involving digital processing

H03K2217/94036

Multiple detection, i.e. where different switching signals are generated after operation of the user is detected at different time instants at different locations during the actuation movement by two or more sensors of the same or different kinds

H03K2217/94042

Means for reducing energy consumption

H03K2217/94047

Cascode connected switches

H03K2217/94052

with evaluation of actuation pattern or sequence, e.g. tapping

H03K2217/94057

Rotary switches

H03K2217/94063

with optical detection

H03K2217/94068

with magnetic detection

H03K2217/94073

with capacitive detection

H03K2217/94078

with acoustic detection

H03K2217/94084

Transmission of parameters among sensors or between sensor and remote station

H03K2217/94089

Wireless transmission

H03K2217/94094

Wired transmission, e.g. via bus connection or similar

H03K2217/941

using an optical detector

H03K2217/94102

characterised by the type of activation

H03K2217/94104

using a light barrier

H03K2217/94106

Passive activation of light sensor, e.g. by ambient light

H03K2217/94108

making use of reflection

H03K2217/94111

having more than one emitter

H03K2217/94112

having more than one receiver

H03K2217/94114

Optical multi axis

H03K2217/94116

increasing reliability, fail-safe

H03K2217/945

Proximity switches

H03K2217/95

using a magnetic detector

H03K2217/952

Detection of ferromagnetic and non-magnetic conductive targets

H03K2217/954

Ferromagnetic case

H03K2217/956

Negative resistance, e.g. LC inductive proximity switches

H03K2217/958

involving transponders

H03K2217/96

Touch switches

H03K2217/96003

using acoustic waves, e.g. ultrasound

H03K2217/96007

by reflection

H03K2217/96011

with propagation, SAW or BAW

H03K2217/96015

Constructional details for touch switches for capacitive touch switches see

H03K2217/9607

H03K2217/96019

using conductive paint

H03K2217/96023

Details of electro-mechanic connections between different elements, e.g.: sensing plate and integrated circuit containing electronics

H03K2217/96027

Piezoelectric snap spring

H03K2217/96031

Combination of touch switch and LC display

H03K2217/96035

by temperature detection, i.e. body heat

H03K2217/96038

Inductive touch switches

H03K2217/96042

with illumination

H03K2217/96046

Key-pad combined with display, back-lit

H03K2217/9605

Detection of leakage or discharge current across the touching body to ground

H03K2217/96054

Double function: touch detection combined with detection of a movable element

H03K2217/96058

Fail-safe touch switches, where switching takes place only after repeated touch

H03K2217/96062

with tactile or haptic feedback

H03K2217/96066

Thumbwheel, potentiometer, scrollbar or slider simulation by touch switch

H03K2217/9607

Capacitive touch switches

H03K2217/960705

Safety of capacitive touch and proximity switches, e.g. increasing reliability, fail-safe

H03K2217/96071

characterised by the detection principle

H03K2217/960715

Rc-timing

e.g. measurement of variation of charge time or discharge time of the sensor

H03K2217/96072

Phase comparison, i.e. where a phase comparator receives at one input the signal directly from the oscillator, at a second input the same signal but delayed, with a delay depending on a sensing capacitance

H03K2217/960725

Charge-transfer

H03K2217/96073

Amplitude comparison

H03K2217/960735

characterised by circuit details

H03K2217/96074

Switched capacitor

H03K2217/960745

Capacitive differential

e.g. comparison with reference capacitance

H03K2217/96075

involving bridge circuit

H03K2217/960755

Constructional details of capacitive touch and proximity switches

H03K2217/96076

with spring electrode

H03K2217/960765

Details of shielding arrangements

H03K2217/96077

comprising an electrode which is floating

H03K2217/960775

Emitter-receiver or "fringe" type detection, i.e. one or more field emitting electrodes and corresponding one or more receiving electrodes

H03K2217/96078

Sensor being a wire or a strip, e.g. used in automobile door handles or bumpers

H03K2217/960785

with illumination

H03K2217/96079

using a single or more light guides

H03K2217/960795

using organic light emitting devices, e.g. light emitting polymer [OEP] or OLED

H03K2217/965

Switches controlled by moving an element forming part of the switch

H03K2217/9651

the moving element acting on a force, e.g. pressure sensitive element

H03K2217/9653

with illumination

H03K2217/9655

using a single or more light guides

H03K2217/9656

using organic light emitting devices, e.g. light emitting polymer [OEP] or OLED

H03K2217/9658

Safety, e.g. fail-safe switching requiring a sequence of movements