B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS making microcapsules or microballoons B01J13/02; processes or apparatus peculiar to the manufacture or treatment of piezo-electric, electrostrictive or magnetostrictive element per se H10N30/01This subclass does not cover:processes or apparatus for the manufacture or treatment of purely electrical or electronic devices, which are covered by section H, e.g. group H01L21/00;processes or apparatus involving the manipulation of single atoms or molecules, which are covered by group B82B3/00.In this subclass, local "residual" subgroups, e.g. B81C1/00126, are used with the following purpose.
When classifying a document which does not fit in any of a set of subgroups with the same dot-level, the document should be classified in the residual group, if present, and not in the group at the hierarchical level one dot above.
In the example, the document shall be classified in B81C1/00126 and not in B81C1/00023 as B81C1/00126 is "residual" to B81C1/00031-B81C1/00119 B81C1/00 B81C1/00Manufacture or treatment of devices or systems in or on a substrate B81C3/00 takes precedence B81C1/00007Assembling automatically hinged components, i.e. self-assembly processes self-assembly mechanisms B81B7/0003 B81C1/00015for manufacturing microsystems B81C1/00023without movable or flexible elements array of static structures for functionalising surfaces in B81C1/00206; manufacture of MEMS devices for specific applications, see relevant places, e.g. microreactors B01J19/0093, lab-on-chip B01L3/5027, micromixers B01F33/30 B81C1/00031Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002 B81C1/00039Anchors B81C1/00047Cavities B81C1/00055Grooves B81C1/00063Trenches B81C1/00071Channels B81C1/00079Grooves not provided for in groups B81C1/00063 - B81C1/00071 B81C1/00087Holes B81C1/00095Interconnects B81C1/00103Structures having a predefined profile, e.g. sloped or rounded grooves B81C1/00111Tips, pillars, i.e. raised structures microneedles A61M37/0015 B81C1/00119Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems B81C1/00126Static structures not provided for in groups B81C1/00031 - B81C1/00119 B81C1/00134comprising flexible or deformable structures manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C19/5719, pressure sensors G01L9/0042, accelerometers G01P15/0802, acoustic transducers or diaphragms therefor H04R31/00 B81C1/00142Bridges deformable micromirrors G02B26/0841 B81C1/0015Cantilevers switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244 B81C1/00158Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039 B81C1/00166Electrodes B81C1/00174See-saws B81C1/00182Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer B81C1/0019Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182 B81C1/00198comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements B81C1/00206Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties B81C1/00214Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices B81C1/00222Integrating an electronic processing unit with a micromechanical structure B81C1/0023Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261 B81C1/00238Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure B81C1/00246Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate B81C1/00253Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C1/0023 - B81C1/00246 B81C1/00261Processes for packaging MEMS devices MEMS packages B81B7/0032, packaging of smart-MEMS B81C1/0023 B81C1/00269Bonding of solid lids or wafers to the substrate B81C1/00277for maintaining a controlled atmosphere inside of the cavity containing the MEMS B81C1/00285using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters B81C1/00293maintaining a controlled atmosphere with processes not provided for in B81C1/00285 B81C1/00301Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias B81C1/00309suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound B81C1/00317Packaging optical devices B81C1/00325for reducing stress inside of the package structure B81C1/00333Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325 B81C1/00341Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261 B81C1/00349Creating layers of material on a substrate B81C1/00357involving bonding one or several substrates on a non-temporary support, e.g. another substrate B81C1/00365having low tensile stress between layers B81C1/00373Selective deposition, e.g. printing or microcontact printing B81C1/0038Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373 B81C1/00388Etch mask forming B81C1/00396Mask characterised by its composition, e.g. multilayer masks B81C1/00404Mask characterised by its size, orientation or shape B81C1/00412Mask characterised by its behaviour during the etching process, e.g. soluble masks B81C1/0042Compensation masks in orientation dependent etching B81C1/00428Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042 B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate B81C1/00444Surface micromachining, i.e. structuring layers on the substrate B81C1/0046using stamping, e.g. imprinting nanoimprinting for making etch masks G03F7/0002 B81C1/00468Releasing structures B81C1/00476removing a sacrificial layer B81C1/00912 takes precedence B81C1/00484Processes for releasing structures not provided for in group B81C1/00476 B81C1/00492Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484 B81C1/005Bulk micromachining B81C1/00507Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements SIMOX techniques H01L21/762 B81C1/00515Bulk micromachining techniques not provided for in B81C1/00507 B81C1/00523Etching material B81C1/00531Dry etching B81C1/00539Wet etching B81C1/00547Etching processes not provided for in groups B81C1/00531 - B81C1/00539 B81C1/00555Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity B81C1/00023 - B81C1/0019 take precedence B81C1/00563Avoid or control over-etching B81C1/00571Avoid or control under-cutting B81C1/00579Avoid charge built-up B81C1/00587Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579 B81C1/00595Control etch selectivity B81C1/00603Aligning features and geometries on both sides of a substrate, e.g. when double side etching B81C1/00611Processes for the planarisation of structures planarising depositions C23C, H01L B81C1/00619Forming high aspect ratio structures having deep steep walls B81C1/00626Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619 B81C1/00634Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626 B81C1/00642for improving the physical properties of a device B81C1/0065Mechanical properties B81C1/00658Treatments for improving the stiffness of a vibrating element B81C1/00666Treatments for controlling internal stress or strain in MEMS structures B81C1/00674Treatments for improving wear resistance B81C1/00682Treatments for improving mechanical properties, not provided for in B81C1/00658 - B81C1/0065 B81C1/0069Thermal properties, e.g. improve thermal insulation B81C1/00698Electrical characteristics, e.g. by doping materials B81C1/00706Magnetic properties B81C1/00714Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706 B81C1/00777Preserve existing structures from alteration, e.g. temporary protection during manufacturing B81C1/00785Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching B81C1/00563 - B81C1/00595 take precedence B81C1/00793Avoid contamination, e.g. absorption of impurities or oxidation B81C1/00801Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer B81C1/00595, B81C1/00468 take precedence B81C1/00809Methods to avoid chemical alteration not provided for in groups B81C1/00793 - B81C1/00801 B81C1/00817Avoid thermal destruction B81C1/00825Protect against mechanical threats, e.g. against shocks, or residues B81C1/00261 take precedence B81C1/00833Methods for preserving structures not provided for in groups B81C1/00785 - B81C1/00825 B81C1/00841Cleaning during or after manufacture cleaning of semiconductor devices H01L21/306 B81C1/00849during manufacture B81C1/00857after manufacture, e.g. back-end of the line process B81C1/00865Multistep processes for the separation of wafers into individual elements B81C1/00873characterised by special arrangements of the devices, allowing an easier separation B81C1/0088Separation allowing recovery of the substrate or a part of the substrate, e.g. epitaxial lift-off B81C1/00888Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving B81C1/00896Temporary protection during separation into individual elements B81C1/00904Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896 B81C1/00912Treatments or methods for avoiding stiction of flexible or moving parts of MEMS B81C1/0092For avoiding stiction during the manufacturing process of the device, e.g. during wet etching B81C1/00928Eliminating or avoiding remaining moisture after the wet etch release of the movable structure B81C1/00936Releasing the movable structure without liquid etchant B81C1/00944Maintaining a critical distance between the structures to be released B81C1/00952Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944 B81C1/0096For avoiding stiction when the device is in use, i.e. after manufacture has been completed B81C1/00968Methods for breaking the stiction bond B81C1/00976Control methods for avoiding stiction, e.g. controlling the bias voltage B81C1/00984Methods for avoiding stiction when the device is in use not provided for in groups B81C1/00968 - B81C1/00976 B81C1/00992Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C1/0092 - B81C1/00984 B81C3/00Assembling of devices or systems from individually processed components B81C3/001Bonding of two components B81C3/002Aligning microparts B81C3/004Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators B81C3/005Passive alignment, i.e. without a detection of the position of the elements or using only structural arrangements or thermodynamic forces B81C3/007Methods for aligning microparts not provided for in groups B81C3/004 - B81C3/005 B81C3/008Aspects related to assembling from individually processed components, not covered by groups B81C3/001 - B81C3/002 B81C99/00Subject matter not provided for in other groups of this subclass B81C99/0005Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same B81C99/001for cutting, cleaving or grinding B81C99/0015for microextrusion extrusion heads in general B29C48/30 B81C99/002Apparatus for assembling MEMS, e.g. micromanipulators micromanipulators per se B25J7/00 B81C99/0025Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002 B81C99/003Characterising MEMS devices, e.g. measuring and identifying electrical or mechanical constants B81C99/0035Testing B81C99/004during manufacturing B81C99/0045End test of the packaged device B81C99/005Test apparatus B81C99/0055Manufacturing logistics B81C99/006Design; Simulation B81C99/0065Process control; Yield prediction B81C99/007Marking B81C99/0075Manufacture of substrate-free structures B81C99/008separating the processed structure from a mother substrate B81C99/0085using moulds and master templates, e.g. for hot-embossing B81C99/009Manufacturing the stamps or the moulds B81C99/0095Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C99/008 - B81C99/009 B81C2201/00 B81C2201/00Manufacture or treatment of microstructural devices or systems B81C2201/01in or on a substrate B81C2201/0101Shaping materialStructuring the bulk substrate or layers on the substrateFilm patterning B81C2201/0102Surface micromachining B81C2201/0104Chemical-mechanical polishing [CMP] B81C2201/0105Sacrificial layer B81C2201/0107Sacrificial metal B81C2201/0108Sacrificial polymer, ashing of organics B81C2201/0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108 B81C2201/0111Bulk micromachining B81C2201/0112Bosch process B81C2201/0114Electrochemical etching, anodic oxidation B81C2201/0115Porous silicon B81C2201/0116Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities B81C2201/0118Processes for the planarization of structures B81C2201/0119involving only addition of materials, i.e. additive planarization B81C2201/0121involving addition of material followed by removal of parts of said material, i.e. subtractive planarization B81C2201/0122Selective addition B81C2201/0123Selective removal B81C2201/0125Blanket removal, e.g. polishing B81C2201/0126Processes for the planarization of structures not provided for in B81C2201/0119 - B81C2201/0125 B81C2201/0128Processes for removing material B81C2201/0129Diamond turning B81C2201/013Etching B81C2201/0132Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling B81C2201/0133Wet etching B81C2201/0135Controlling etch progression B81C2201/0136by doping limited material regions B81C2201/0138Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition B81C2201/0139with the electric potential of an electrochemical etching B81C2201/014by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal B81C2201/0142Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014 B81C2201/0143Focussed beam, i.e. laser, ion or e-beam B81C2201/0145Spark erosion B81C2201/0146Processes for removing material not provided for in B81C2201/0129 - B81C2201/0145 B81C2201/0147Film patterning B81C2201/0149Forming nanoscale microstructures using auto-arranging or self-assembling material B81C2201/015Imprinting B81C2201/0152Step and Flash imprinting, UV imprinting B81C2201/0153Imprinting techniques not provided for in B81C2201/0152 B81C2201/0154other processes for film patterning not provided for in B81C2201/0149 - B81C2201/015 B81C2201/0156Lithographic techniques B81C2201/0157Gray-scale mask technology B81C2201/0159Lithographic techniques not provided for in B81C2201/0157 B81C2201/016Passivation B81C2201/0161Controlling physical properties of the material B81C2201/0163Controlling internal stress of deposited layers B81C2201/0164by doping the layer B81C2201/0166by ion implantation B81C2201/0167by adding further layers of materials having complementary strains, i.e. compressive or tensile strain B81C2201/0169by post-annealing B81C2201/017Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169 B81C2201/0171Doping materials B81C2201/0173Thermo-migration of impurities from a solid, e.g. from a doped deposited layer B81C2201/0174for making multi-layered devices, film deposition or growing B81C2201/0176Chemical vapour Deposition B81C2201/0177Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy B81C2201/0178Oxidation B81C2201/018Plasma polymerization, i.e. monomer or polymer deposition B81C2201/0181Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology B81C2201/0183Selective deposition B81C2201/0184Digital lithography, e.g. using an inkjet print-head B81C2201/0185Printing, e.g. microcontact printing B81C2201/0187Controlled formation of micro- or nanostructures using a template positioned on a substrate B81C2201/0188Selective deposition techniques not provided for in B81C2201/0184 - B81C2201/0187 B81C2201/019Bonding or gluing multiple substrate layers B81C2201/0191Transfer of a layer from a carrier wafer to a device wafer B81C2201/0192by cleaving the carrier wafer B81C2201/0194the layer being structured B81C2201/0195the layer being unstructured B81C2201/0197Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192 B81C2201/0198for making a masking layer B81C2201/03Processes for manufacturing substrate-free structures B81C2201/032LIGA process B81C2201/034Moulding B81C2201/036Hot embossing B81C2201/038Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036 B81C2201/05Temporary protection of devices or parts of the devices during manufacturing B81C2201/053Depositing a protective layers B81C2201/056Releasing structures at the end of the manufacturing process B81C2201/11Treatments for avoiding stiction of elastic or moving parts of MEMS B81C2201/112Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts B81C2201/115Roughening a surface B81C2201/117Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers B81C2203/00Forming microstructural systems B81C2203/01Packaging MEMS B81C2203/0109Bonding an individual cap on the substrate B81C2203/0118Bonding a wafer on the substrate, i.e. where the cap consists of another wafer B81C2203/0127Using a carrier for applying a plurality of packaging lids to the system wafer B81C2203/0136Growing or depositing of a covering layer B81C2203/0145Hermetically sealing an opening in the lid B81C2203/0154Moulding a cap over the MEMS device B81C2203/0163Reinforcing a cap, e.g. with ribs B81C2203/0172Seals B81C2203/0181Using microheaters for bonding the lid B81C2203/019characterised by the material or arrangement of seals between parts B81C2203/03Bonding two components B81C2203/031Anodic bondings B81C2203/032Gluing B81C2203/033Thermal bonding B81C2203/035Soldering B81C2203/036Fusion bonding B81C2203/037Thermal bonding techniques not provided for in B81C2203/035 - B81C2203/036 B81C2203/038Bonding techniques not provided for in B81C2203/031 - B81C2203/037 B81C2203/05Aligning components to be assembled B81C2203/051Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors B81C2203/052Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus B81C2203/054using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls B81C2203/055using the surface tension of fluid solder to align the elements B81C2203/057Passive alignment techniques not provided for in B81C2203/054 - B81C2203/055 B81C2203/058Aligning components using methods not provided for in B81C2203/051 - B81C2203/052 B81C2203/07Integrating an electronic processing unit with a micromechanical structure B81C2203/0707Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure B81C2203/0714Forming the micromechanical structure with a CMOS process B81C2203/0721Forming the micromechanical structure with a low-temperature process B81C2203/0735 takes precedence B81C2203/0728Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit B81C2203/0735Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit B81C2203/0742Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit B81C2203/075the electronic processing unit being integrated into an element of the micromechanical structure B81C2203/0757Topology for facilitating the monolithic integration B81C2203/0764Forming the micromechanical structure in a groove B81C2203/0771Stacking the electronic processing unit and the micromechanical structure B81C2203/0778Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771 B81C2203/0785Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates B81C2203/0792Forming interconnections between the electronic processing unit and the micromechanical structure B81C2900/00Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems B81C2900/02Microextrusion heads