H10BELECTRONIC MEMORY DEVICES H10B10/00Volatile memory devices H10B10/00Static random access memory [SRAM] devices H10B10/10SRAM devices comprising bipolar componentsGroup H10B10/10 is incomplete pending reclassification of documents from groups H01L27/1027, H01L27/1028 and H10B99/00.
All groups listed in this Warning should be considered in order to perform a complete search. H10B10/12comprising a MOSFET load element H10B10/125the MOSFET being a thin film transistor [TFT] H10B10/15comprising a resistor load element H10B10/18Peripheral circuit regions H10B12/00Dynamic random access memory [DRAM] devices H10B12/01Manufacture or treatment H10B12/02for one transistor one-capacitor [1T-1C] memory cells H10B12/03Making the capacitor or connections thereto H10B12/033the capacitor extending over the transistor H10B12/0335Making a connection between the transistor and the capacitor, e.g. plug H10B12/036the capacitor extending under the transistor H10B12/038the capacitor being in a trench in the substrate H10B12/0383wherein the transistor is vertical H10B12/0385Making a connection between the transistor and the capacitor, e.g. buried strap H10B12/0387Making the trench H10B12/05Making the transistor H10B12/053the transistor being at least partially in a trench in the substrate vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383 H10B12/056the transistor being a FinFET H10B12/09with simultaneous manufacture of the peripheral circuit region and memory cells H10B12/10DRAM devices comprising bipolar componentsGroup H10B12/10 is incomplete pending reclassification of documents from groups H01L27/1027, H01L27/1028 and H10B99/00.
All groups listed in this Warning should be considered in order to perform a complete search. H10B12/20DRAM devices comprising floating-body transistors, e.g. floating-body cells H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells H10B12/31having a storage electrode stacked over the transistor H10B12/312with a bit line higher than the capacitor H10B12/315with the capacitor higher than a bit line H10B12/318the storage electrode having multiple segments H10B12/33the capacitor extending under the transistor H10B12/34the transistor being at least partially in a trench in the substrate H10B12/36the transistor being a FinFET H10B12/37the capacitor being at least partially in a trench in the substrate H10B12/373the capacitor extending under or around the transistor H10B12/377having a storage electrode extension located over the transistor H10B12/39the capacitor and the transistor being in a same trench H10B12/395the transistor being vertical H10B12/48Data lines or contacts therefor H10B12/482Bit lines H10B12/485Bit line contacts H10B12/488Word lines H10B12/50Peripheral circuit region structures H10B20/00Non-volatile memory devices H10B20/00Read-only memory [ROM] devices H10B20/10ROM devices comprising bipolar componentsGroup H10B20/10 is incomplete pending reclassification of documents from groups H01L27/1027, H01L27/1028 and H10B99/00.
All groups listed in this Warning should be considered in order to perform a complete search. H10B20/20Programmable ROM [PROM] devices comprising field-effect components H10B20/10 takes precedenceGroup H10B20/20 is impacted by reclassification into group H10B20/25.
Groups H10B20/20 and H10B20/25 should be considered in order to perform a complete search. H10B20/25One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible linksGroup H10B20/25 is incomplete pending reclassification of documents from group H10B20/20.
Groups H10B20/20 and H10B20/25 should be considered in order to perform a complete search. H10B20/27ROM only H10B20/30having the source region and the drain region on the same level, e.g. lateral transistors H10B20/34Source electrode or drain electrode programmed H10B20/36Gate programmed, e.g. different gate material or no gate H10B20/363Gate conductor programmed H10B20/367Gate dielectric programmed, e.g. different thickness H10B20/38Doping programmed, e.g. mask ROM H10B20/383Channel doping programmed H10B20/387Source region or drain region doping programmed H10B20/40having the source region and drain region on different levels, e.g. vertical channel H10B20/50having transistors on different levels, e.g. 3D ROM H10B20/60Peripheral circuit regions H10B20/65of memory structures of the ROM only type H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates H10B41/10characterised by the top-view layout H10B41/20characterised by three-dimensional arrangements, e.g. with cells on different height levels H10B41/23with source and drain on different levels, e.g. with sloping channels H10B41/27the channels comprising vertical portions, e.g. U-shaped channels H10B41/30characterised by the memory core region H10B41/35with a cell select transistor, e.g. NAND H10B41/40characterised by the peripheral circuit region H10B41/41of a memory region comprising a cell select transistor, e.g. NAND H10B41/42Simultaneous manufacture of periphery and memory cells H10B41/43comprising only one type of peripheral transistor H10B41/44with a control gate layer also being used as part of the peripheral transistor H10B41/46with an inter-gate dielectric layer also being used as part of the peripheral transistor H10B41/47with a floating-gate layer also being used as part of the peripheral transistor H10B41/48with a tunnel dielectric layer also being used as part of the peripheral transistor H10B41/49comprising different types of peripheral transistor H10B41/50characterised by the boundary region between the core region and the peripheral circuit region H10B41/60the control gate being a doped region, e.g. single-poly memory cell H10B41/70the floating gate being an electrode shared by two or more components H10B43/00EEPROM devices comprising charge-trapping gate insulators H10B43/10characterised by the top-view layout H10B43/20characterised by three-dimensional arrangements, e.g. with cells on different height levels H10B43/23with source and drain on different levels, e.g. with sloping channels H10B43/27the channels comprising vertical portions, e.g. U-shaped channels H10B43/30characterised by the memory core region H10B43/35with cell select transistors, e.g. NAND H10B43/40characterised by the peripheral circuit region H10B43/50characterised by the boundary region between the core and peripheral circuit regions H10B51/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors H10B51/10characterised by the top-view layout H10B51/20characterised by the three-dimensional arrangements, e.g. with cells on different height levels H10B51/30characterised by the memory core region H10B51/40characterised by the peripheral circuit region H10B51/50characterised by the boundary region between the core and peripheral circuit regions H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors H10B53/10characterised by the top-view layout H10B53/20characterised by the three-dimensional arrangements, e.g. with cells on different height levels H10B53/30characterised by the memory core region H10B53/40characterised by the peripheral circuit region H10B53/50characterised by the boundary region between the core and peripheral circuit regions H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devicesGroup H10B61/00 is incomplete pending reclassification of documents from group H10N59/00.
Groups H10N59/00 and H10B61/00 should be considered in order to perform a complete search. H10B61/10comprising components having two electrodes, e.g. diodes or MIM elements H10B61/20comprising components having three or more electrodes, e.g. transistors H10B61/22of the field-effect transistor [FET] type H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devicesGroup H10B63/00 is impacted by reclassification into groups H10B63/10 and H10N79/00.
All groups listed in this Warning should be considered in order to perform a complete search. H10B63/10Phase change RAM [PCRAM, PRAM] devicesGroup H10B63/10 is incomplete pending reclassification of documents from group H10B63/00.
Groups H10B63/00 and H10B63/10 should be considered in order to perform a complete search. H10B63/20comprising selection components having two electrodes, e.g. diodes H10B63/22of the metal-insulator-metal type H10B63/24of the Ovonic threshold switching type H10B63/30comprising selection components having three or more electrodes, e.g. transistors H10B63/32of the bipolar type H10B63/34of the vertical channel field-effect transistor type H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays H10B63/82the switching components having a common active material layer H10B63/84arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays H10B63/845the switching components being connected to a common vertical conductor H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devicesGroup H10B69/00 is incomplete pending reclassification of documents from groups H01L27/1027 and H01L27/1028.
Groups H01L27/1027, H01L27/1028 and H10B69/00 should be considered in order to perform a complete search. H10B80/00 H10B80/00Assemblies of multiple devices comprising at least one memory device covered by this subclassGroup H10B80/00 is incomplete pending reclassification of documents from groups H01L25/065, H01L25/0652, H01L25/0655, H01L25/0657 and H01L25/18.
All groups listed in this Warning should be considered in order to perform a complete search. H10B99/00Subject matter not provided for in other groups of this subclassGroup H10B99/00 is incomplete pending reclassification of documents from groups H01L27/102 and H01L27/1022.
Group H10B99/00 is also impacted by reclassification into groups H10B10/10, H10B12/10 and H10B20/10.
All groups listed in this Warning should be considered in order to perform a complete search. H10B99/10Memory cells having a cross-point geometryGroup H10B99/10 is incomplete pending reclassification of documents from group H01L27/10.
Groups H01L27/10 and H10B99/10 should be considered in order to perform a complete search. H10B99/14comprising memory cells that only have passive resistors or passive capacitorsGroup H10B99/14 is incomplete pending reclassification of documents from group H01L27/101.
Groups H01L27/101 and H10B99/14 should be considered in order to perform a complete search. H10B99/16comprising memory cells having diodesGroup H10B99/16 is incomplete pending reclassification of documents from group H01L27/1021.
Groups H01L27/1021 and H10B99/16 should be considered in order to perform a complete search. H10B99/20comprising memory cells having thyristorsGroup H10B99/20 is incomplete pending reclassification of documents from groups H01L27/1027 and H01L27/1028.
Groups H01L27/1027, H01L27/1028 and H10B99/20 should be considered in order to perform a complete search. H10B99/22including field-effect componentsGroup H10B99/22 is incomplete pending reclassification of documents from group H01L27/105.
Groups H01L27/105 and H10B99/22 should be considered in order to perform a complete search.