You cannot select more than 25 topics
Topics must start with a letter or number, can include dashes ('-') and can be up to 35 characters long.
128 lines
72 KiB
XML
128 lines
72 KiB
XML
<?xml version="1.0" encoding="UTF-8"?>
|
|
<class-scheme publication-date="2023-02-01" scheme-type="cpc" publication-type="official">
|
|
<classification-item breakdown-code="false" not-allocatable="true" level="5" additional-only="false" sort-key="H10B" definition-exists="false" date-revised="2023-02-01" status="published"><classification-symbol>H10B</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>ELECTRONIC MEMORY DEVICES</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="true" level="6" additional-only="false" sort-key="H10B10/00" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Volatile memory devices</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B10/00" definition-exists="false" ipc-concordant="H10B10/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Static random access memory [SRAM] devices</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B10/10" definition-exists="false" ipc-concordant="H10B10/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>SRAM devices comprising bipolar components</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B10/10</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L27/1027</class-ref>, <class-ref scheme="cpc">H01L27/1028</class-ref> and <class-ref scheme="cpc">H10B99/00</class-ref>.<br/>All groups listed in this Warning should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B10/12" definition-exists="false" ipc-concordant="H10B10/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/12</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising a MOSFET load element</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B10/125" definition-exists="false" ipc-concordant="H10B10/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/125</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the MOSFET being a thin film transistor [TFT]</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B10/15" definition-exists="false" ipc-concordant="H10B10/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/15</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising a resistor load element</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B10/18" definition-exists="false" ipc-concordant="H10B10/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B10/18</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Peripheral circuit regions</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B12/00" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Dynamic random access memory [DRAM] devices</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B12/01" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/01</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Manufacture or treatment</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/02" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/02</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>for one transistor one-capacitor [1T-1C] memory cells</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/03" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/03</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Making the capacitor or connections thereto</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B12/033" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/033</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor extending over the transistor</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="12" additional-only="false" sort-key="H10B12/0335" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/0335</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Making a connection between the transistor and the capacitor, e.g. plug</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B12/036" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/036</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor extending under the transistor</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B12/038" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/038</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor being in a trench in the substrate</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="12" additional-only="false" sort-key="H10B12/0383" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/0383</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>wherein the transistor is vertical</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="12" additional-only="false" sort-key="H10B12/0385" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/0385</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Making a connection between the transistor and the capacitor, e.g. buried strap</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="12" additional-only="false" sort-key="H10B12/0387" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/0387</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Making the trench</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/05" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/05</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Making the transistor</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B12/053" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/053</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the transistor being at least partially in a trench in the substrate </text><reference><text>vertical transistor in combination with a capacitor formed in a substrate trench <class-ref scheme="cpc">H10B12/0383</class-ref></text></reference></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B12/056" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/056</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the transistor being a FinFET</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/09" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/09</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>with simultaneous manufacture of the peripheral circuit region and memory cells</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B12/10" definition-exists="false" ipc-concordant="H10B12/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>DRAM devices comprising bipolar components</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B12/10</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L27/1027</class-ref>, <class-ref scheme="cpc">H01L27/1028</class-ref> and <class-ref scheme="cpc">H10B99/00</class-ref>. <br/>All groups listed in this Warning should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B12/20" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>DRAM devices comprising floating-body transistors, e.g. floating-body cells</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B12/30" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/31" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/31</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>having a storage electrode stacked over the transistor</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/312" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/312</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>with a bit line higher than the capacitor</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/315" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/315</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>with the capacitor higher than a bit line</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/318" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/318</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the storage electrode having multiple segments</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/33" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/33</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor extending under the transistor</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/34" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/34</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the transistor being at least partially in a trench in the substrate</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/36" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/36</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the transistor being a FinFET</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/37" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/37</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor being at least partially in a trench in the substrate</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/373" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/373</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor extending under or around the transistor</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/377" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/377</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>having a storage electrode extension located over the transistor</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/39" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/39</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the capacitor and the transistor being in a same trench</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/395" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/395</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the transistor being vertical</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B12/48" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/48</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Data lines or contacts therefor</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/482" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/482</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Bit lines</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/485" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/485</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Bit line contacts</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B12/488" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/488</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Word lines</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B12/50" definition-exists="false" ipc-concordant="H10B12/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B12/50</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Peripheral circuit region structures</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="true" level="6" additional-only="false" sort-key="H10B20/00" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Non-volatile memory devices</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B20/00" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Read-only memory [ROM] devices</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B20/10" definition-exists="false" ipc-concordant="H10B20/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>ROM devices comprising bipolar components</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B20/10</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L27/1027</class-ref>, <class-ref scheme="cpc">H01L27/1028</class-ref> and <class-ref scheme="cpc">H10B99/00</class-ref>. <br/>All groups listed in this Warning should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B20/20" definition-exists="false" ipc-concordant="H10B20/20" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Programmable ROM [PROM] devices comprising field-effect components </text><reference><text><class-ref scheme="cpc">H10B20/10</class-ref> takes precedence</text></reference></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-source">Group <class-ref scheme="cpc">H10B20/20</class-ref> is impacted by reclassification into group <class-ref scheme="cpc">H10B20/25</class-ref>. <br/>Groups <class-ref scheme="cpc">H10B20/20</class-ref> and <class-ref scheme="cpc">H10B20/25</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B20/25" definition-exists="false" ipc-concordant="H10B20/25" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/25</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B20/25</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H10B20/20</class-ref>. <br/>Groups <class-ref scheme="cpc">H10B20/20</class-ref> and <class-ref scheme="cpc">H10B20/25</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B20/27" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/27</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>ROM only</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B20/30" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>having the source region and the drain region on the same level, e.g. lateral transistors</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B20/34" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/34</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Source electrode or drain electrode programmed</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B20/36" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/36</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Gate programmed, e.g. different gate material or no gate</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B20/363" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/363</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Gate conductor programmed</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B20/367" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/367</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Gate dielectric programmed, e.g. different thickness</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B20/38" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/38</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Doping programmed, e.g. mask ROM</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B20/383" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/383</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Channel doping programmed</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B20/387" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/387</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Source region or drain region doping programmed</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B20/40" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/40</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>having the source region and drain region on different levels, e.g. vertical channel</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B20/50" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/50</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>having transistors on different levels, e.g. 3D ROM</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B20/60" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/60</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Peripheral circuit regions</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B20/65" definition-exists="false" ipc-concordant="H10B20/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B20/65</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>of memory structures of the ROM only type</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B41/00" definition-exists="false" ipc-concordant="H10B41/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/10" definition-exists="false" ipc-concordant="H10B41/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the top-view layout</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/20" definition-exists="false" ipc-concordant="H10B41/20" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by three-dimensional arrangements, e.g. with cells on different height levels</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B41/23" definition-exists="false" ipc-concordant="H10B41/23" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/23</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with source and drain on different levels, e.g. with sloping channels</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B41/27" definition-exists="false" ipc-concordant="H10B41/27" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/27</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>the channels comprising vertical portions, e.g. U-shaped channels</text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/30" definition-exists="false" ipc-concordant="H10B41/30" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the memory core region</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B41/35" definition-exists="false" ipc-concordant="H10B41/35" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/35</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with a cell select transistor, e.g. NAND</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/40" definition-exists="false" ipc-concordant="H10B41/40" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/40</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the peripheral circuit region</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B41/41" definition-exists="false" ipc-concordant="H10B41/41" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/41</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>of a memory region comprising a cell select transistor, e.g. NAND</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B41/42" definition-exists="false" ipc-concordant="H10B41/42" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/42</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Simultaneous manufacture of periphery and memory cells</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B41/43" definition-exists="false" ipc-concordant="H10B41/43" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/43</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>comprising only one type of peripheral transistor</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B41/44" definition-exists="false" ipc-concordant="H10B41/44" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/44</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with a control gate layer also being used as part of the peripheral transistor</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B41/46" definition-exists="false" ipc-concordant="H10B41/46" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/46</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with an inter-gate dielectric layer also being used as part of the peripheral transistor</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B41/47" definition-exists="false" ipc-concordant="H10B41/47" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/47</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with a floating-gate layer also being used as part of the peripheral transistor</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="11" additional-only="false" sort-key="H10B41/48" definition-exists="false" ipc-concordant="H10B41/48" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/48</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with a tunnel dielectric layer also being used as part of the peripheral transistor</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B41/49" definition-exists="false" ipc-concordant="H10B41/49" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/49</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>comprising different types of peripheral transistor</text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/50" definition-exists="false" ipc-concordant="H10B41/50" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/50</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the boundary region between the core region and the peripheral circuit region</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/60" definition-exists="false" ipc-concordant="H10B41/60" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/60</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>the control gate being a doped region, e.g. single-poly memory cell</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B41/70" definition-exists="false" ipc-concordant="H10B41/70" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B41/70</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>the floating gate being an electrode shared by two or more components</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B43/00" definition-exists="false" ipc-concordant="H10B43/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>EEPROM devices comprising charge-trapping gate insulators</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B43/10" definition-exists="false" ipc-concordant="H10B43/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the top-view layout</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B43/20" definition-exists="false" ipc-concordant="H10B43/20" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by three-dimensional arrangements, e.g. with cells on different height levels</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B43/23" definition-exists="false" ipc-concordant="H10B43/23" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/23</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with source and drain on different levels, e.g. with sloping channels</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B43/27" definition-exists="false" ipc-concordant="H10B43/27" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/27</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>the channels comprising vertical portions, e.g. U-shaped channels</text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B43/30" definition-exists="false" ipc-concordant="H10B43/30" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the memory core region</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B43/35" definition-exists="false" ipc-concordant="H10B43/35" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/35</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>with cell select transistors, e.g. NAND</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B43/40" definition-exists="false" ipc-concordant="H10B43/40" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/40</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the peripheral circuit region</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B43/50" definition-exists="false" ipc-concordant="H10B43/50" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B43/50</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the boundary region between the core and peripheral circuit regions</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B51/00" definition-exists="false" ipc-concordant="H10B51/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B51/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B51/10" definition-exists="false" ipc-concordant="H10B51/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B51/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the top-view layout</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B51/20" definition-exists="false" ipc-concordant="H10B51/20" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B51/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the three-dimensional arrangements, e.g. with cells on different height levels</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B51/30" definition-exists="false" ipc-concordant="H10B51/30" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B51/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the memory core region</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B51/40" definition-exists="false" ipc-concordant="H10B51/40" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B51/40</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the peripheral circuit region</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B51/50" definition-exists="false" ipc-concordant="H10B51/50" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B51/50</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the boundary region between the core and peripheral circuit regions</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B53/00" definition-exists="false" ipc-concordant="H10B53/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B53/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors</text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B53/10" definition-exists="false" ipc-concordant="H10B53/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B53/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the top-view layout</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B53/20" definition-exists="false" ipc-concordant="H10B53/20" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B53/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the three-dimensional arrangements, e.g. with cells on different height levels</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B53/30" definition-exists="false" ipc-concordant="H10B53/30" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B53/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the memory core region</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B53/40" definition-exists="false" ipc-concordant="H10B53/40" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B53/40</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the peripheral circuit region</text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B53/50" definition-exists="false" ipc-concordant="H10B53/50" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B53/50</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>characterised by the boundary region between the core and peripheral circuit regions</text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B61/00" definition-exists="false" ipc-concordant="H10B61/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B61/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B61/00</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H10N59/00</class-ref>. <br/>Groups <class-ref scheme="cpc">H10N59/00</class-ref> and <class-ref scheme="cpc">H10B61/00</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B61/10" definition-exists="false" ipc-concordant="H10B61/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B61/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising components having two electrodes, e.g. diodes or MIM elements</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B61/20" definition-exists="false" ipc-concordant="H10B61/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B61/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising components having three or more electrodes, e.g. transistors</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B61/22" definition-exists="false" ipc-concordant="H10B61/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B61/22</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>of the field-effect transistor [FET] type</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B63/00" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Resistance change memory devices, e.g. resistive RAM [ReRAM] devices</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-source">Group <class-ref scheme="cpc">H10B63/00</class-ref> is impacted by reclassification into groups <class-ref scheme="cpc">H10B63/10</class-ref> and <class-ref scheme="cpc">H10N79/00</class-ref>. <br/>All groups listed in this Warning should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B63/10" definition-exists="false" ipc-concordant="H10B63/10" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Phase change RAM [PCRAM, PRAM] devices</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B63/10</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H10B63/00</class-ref>. <br/>Groups <class-ref scheme="cpc">H10B63/00</class-ref> and <class-ref scheme="cpc">H10B63/10</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B63/20" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising selection components having two electrodes, e.g. diodes</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B63/22" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/22</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>of the metal-insulator-metal type</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B63/24" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/24</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>of the Ovonic threshold switching type</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B63/30" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/30</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising selection components having three or more electrodes, e.g. transistors</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B63/32" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/32</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>of the bipolar type</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B63/34" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/34</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>of the vertical channel field-effect transistor type</text></CPC-specific-text></title-part></class-title></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B63/80" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/80</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B63/82" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/82</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the switching components having a common active material layer</text></CPC-specific-text></title-part></class-title></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="9" additional-only="false" sort-key="H10B63/84" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/84</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays</text></CPC-specific-text></title-part></class-title>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="10" additional-only="false" sort-key="H10B63/845" definition-exists="false" ipc-concordant="H10B63/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B63/845</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>the switching components being connected to a common vertical conductor</text></CPC-specific-text></title-part></class-title></classification-item></classification-item></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B69/00" definition-exists="false" ipc-concordant="H10B69/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B69/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Erasable-and-programmable ROM [EPROM] devices not provided for in groups <class-ref scheme="cpc">H10B41/00</class-ref> - <class-ref scheme="cpc">H10B63/00</class-ref>, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B69/00</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L27/1027</class-ref> and <class-ref scheme="cpc">H01L27/1028</class-ref>. <br/>Groups <class-ref scheme="cpc">H01L27/1027</class-ref>, <class-ref scheme="cpc">H01L27/1028</class-ref> and <class-ref scheme="cpc">H10B69/00</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="true" level="6" additional-only="false" sort-key="H10B80/00" date-revised="2023-02-01" status="published"><classification-symbol>H10B80/00</classification-symbol>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B80/00" definition-exists="false" ipc-concordant="H10B80/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B80/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Assemblies of multiple devices comprising at least one memory device covered by this subclass</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B80/00</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L25/065</class-ref>, <class-ref scheme="cpc">H01L25/0652</class-ref>, <class-ref scheme="cpc">H01L25/0655</class-ref>, <class-ref scheme="cpc">H01L25/0657</class-ref> and <class-ref scheme="cpc">H01L25/18</class-ref>. <br/>All groups listed in this Warning should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="7" additional-only="false" sort-key="H10B99/00" definition-exists="false" ipc-concordant="H10B99/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B99/00</classification-symbol><class-title date-revised="2023-02-01"><title-part><text>Subject matter not provided for in other groups of this subclass</text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B99/00</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L27/102</class-ref> and <class-ref scheme="cpc">H01L27/1022</class-ref>. <br/>Group <class-ref scheme="cpc">H10B99/00</class-ref> is also impacted by reclassification into groups <class-ref scheme="cpc">H10B10/10</class-ref>, <class-ref scheme="cpc">H10B12/10</class-ref> and <class-ref scheme="cpc">H10B20/10</class-ref>. <br/>All groups listed in this Warning should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B99/10" definition-exists="false" ipc-concordant="H10B99/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B99/10</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>Memory cells having a cross-point geometry</text></CPC-specific-text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B99/10</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H01L27/10</class-ref>. <br/>Groups <class-ref scheme="cpc">H01L27/10</class-ref> and <class-ref scheme="cpc">H10B99/10</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B99/14" definition-exists="false" ipc-concordant="H10B99/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B99/14</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising memory cells that only have passive resistors or passive capacitors</text></CPC-specific-text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B99/14</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H01L27/101</class-ref>. <br/>Groups <class-ref scheme="cpc">H01L27/101</class-ref> and <class-ref scheme="cpc">H10B99/14</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B99/16" definition-exists="false" ipc-concordant="H10B99/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B99/16</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising memory cells having diodes</text></CPC-specific-text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B99/16</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H01L27/1021</class-ref>. <br/>Groups <class-ref scheme="cpc">H01L27/1021</class-ref> and <class-ref scheme="cpc">H10B99/16</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B99/20" definition-exists="false" ipc-concordant="H10B99/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B99/20</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>comprising memory cells having thyristors</text></CPC-specific-text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B99/20</class-ref> is incomplete pending reclassification of documents from groups <class-ref scheme="cpc">H01L27/1027</class-ref> and <class-ref scheme="cpc">H01L27/1028</class-ref>. <br/>Groups <class-ref scheme="cpc">H01L27/1027</class-ref>, <class-ref scheme="cpc">H01L27/1028</class-ref> and <class-ref scheme="cpc">H10B99/20</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item>
|
|
<classification-item breakdown-code="false" not-allocatable="false" level="8" additional-only="false" sort-key="H10B99/22" definition-exists="false" ipc-concordant="H10B99/00" c-set-base-allowed="false" c-set-subsequent-allowed="true" date-revised="2023-02-01" status="published"><classification-symbol>H10B99/22</classification-symbol><class-title date-revised="2023-02-01"><title-part><CPC-specific-text><text>including field-effect components</text></CPC-specific-text></title-part></class-title><notes-and-warnings><note type="warning"><note-paragraph warning-type="reclass-destination">Group <class-ref scheme="cpc">H10B99/22</class-ref> is incomplete pending reclassification of documents from group <class-ref scheme="cpc">H01L27/105</class-ref>. <br/>Groups <class-ref scheme="cpc">H01L27/105</class-ref> and <class-ref scheme="cpc">H10B99/22</class-ref> should be considered in order to perform a complete search.</note-paragraph></note></notes-and-warnings></classification-item></classification-item></classification-item></classification-item></class-scheme> |