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H ELECTRICITY
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H01 ELECTRIC ELEMENTS
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H01B CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
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H01B1/00 0 Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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H01B1/02 1 mainly consisting of metals or alloys
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H01B1/023 2 {Alloys based on aluminium}
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H01B1/026 2 {Alloys based on copper}
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H01B1/04 1 mainly consisting of carbon-silicon compounds, carbon or silicon
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H01B1/06 1 mainly consisting of other non-metallic substances
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H01B1/08 2 oxides
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H01B1/10 2 sulfides
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H01B1/12 2 organic substances {(organic macromolecular compounds or compositions C08)}
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H01B1/121 3 {Charge-transfer complexes}
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H01B1/122 3 {Ionic conductors}
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H01B1/124 3 {Intrinsically conductive polymers}
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H01B1/125 4 {comprising aliphatic main chains, e.g. polyactylenes}
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H01B1/127 4 {comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes}
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H01B1/128 4 {comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes}
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H01B1/14 1 Conductive material dispersed in non-conductive inorganic material
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H01B1/16 2 the conductive material comprising metals or alloys
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H01B1/18 2 the conductive material comprising carbon-silicon compounds, carbon or silicon
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H01B1/20 1 Conductive material dispersed in non-conductive organic material {(organic macromolecular compounds or compositions C08)}
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H01B1/22 2 the conductive material comprising metals or alloys
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H01B1/24 2 the conductive material comprising carbon-silicon compounds, carbon or silicon
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H01B3/00 0 Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
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H01B3/002 1 {Inhomogeneous material in general}
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H01B3/004 2 {with conductive additives or conductive layers}
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H01B3/006 2 {Other inhomogeneous material}
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H01B3/008 1 {Other insulating material}
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H01B3/02 1 mainly consisting of inorganic substances
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H01B3/025 2 {Other inorganic material}
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H01B3/04 2 mica
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H01B3/06 2 asbestos
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H01B3/065 3 {Wires with asbestos}
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H01B3/08 2 quartz; glass; glass wool; slag wool; vitreous enamels
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H01B3/081 3 {Wires with vitreous enamels}
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H01B3/082 3 {Wires with glass or glass wool}
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H01B3/084 3 {Glass or glass wool in binder}
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H01B3/085 3 {Particles bound with glass}
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H01B3/087 3 {Chemical composition of glass}
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H01B3/088 3 {Shaping of glass or deposition of glass}
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H01B3/10 2 metallic oxides (ceramics H01B3/12)
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H01B3/105 3 {Wires with oxides}
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H01B3/12 2 ceramics
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H01B3/14 2 cements
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H01B3/16 2 gases
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H01B3/18 1 mainly consisting of organic substances {(organic macromolecular compounds or compositions C08)}
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H01B3/185 2 {Substances or derivates of cellulose}
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H01B3/20 2 liquids, e.g. oils (silicone oils H01B3/46)
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H01B3/22 3 hydrocarbons
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H01B3/24 3 containing halogen in the molecules, e.g. halogenated oils
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H01B3/26 2 asphalts; bitumens; pitches
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H01B3/28 2 natural or synthetic rubbers
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H01B3/30 2 plastics; resins; waxes
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H01B3/301 3 {Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen or carbon in the main chain of the macromolecule, not provided for in group H01B3/302}
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H01B3/302 3 {Polyurethanes or polythiourethanes; Polyurea or polythiourea}
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H01B3/303 3 {Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302}
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H01B3/305 4 {Polyamides or polyesteramides}
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H01B3/306 4 {Polyimides or polyesterimides}
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H01B3/307 3 {Other macromolecular compounds}
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H01B3/308 3 {Wires with resins}
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H01B3/32 3 natural resins
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H01B3/34 3 Waxes (silicone waxes H01B3/46)
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H01B3/36 3 condensation products of phenols with aldehydes or ketones
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H01B3/38 3 condensation products of aldehydes with amines or amides
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H01B3/40 3 epoxy resins
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H01B3/42 3 polyesters; polyethers; polyacetals
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H01B3/421 4 {Polyesters}
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H01B3/422 5 {Linear saturated polyesters derived from dicarboxylic acids and dihydroxy compounds}
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H01B3/423 6 {Linear aromatic polyesters}
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H01B3/425 5 {Non-saturated polyesters derived from polycarboxylic acids and polyhydroxy compounds, in which at least one of the two components contains aliphatic unsaturation}
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H01B3/426 5 {Polycarbonates}
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H01B3/427 4 {Polyethers}
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H01B3/428 4 {Polyacetals}
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H01B3/44 3 vinyl resins; acrylic resins (silicones H01B3/46)
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H01B3/441 4 {from alkenes}
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H01B3/442 4 {from aromatic vinyl compounds}
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H01B3/443 4 {from vinylhalogenides or other halogenoethylenic compounds}
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H01B3/445 5 {from vinylfluorides or other fluoroethylenic compounds}
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H01B3/446 4 {from vinylacetals}
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H01B3/447 4 {from acrylic compounds}
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H01B3/448 4 {from other vinyl compounds}
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H01B3/46 3 silicones
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H01B3/465 4 {Silicone oils}
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H01B3/47 3 fibre-reinforced plastics, e.g. glass-reinforced plastics
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H01B3/48 2 fibrous materials (fibre-reinforced plastics H01B3/47)
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H01B3/485 3 {Other fibrous materials fabric}
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H01B3/50 3 fabric
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H01B3/52 3 wood; paper; press board
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H01B3/54 3 hard paper; hard fabrics
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H01B3/545 4 {Hard fabrics}
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H01B3/56 2 gases
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H01B5/00 0 Non-insulated conductors or conductive bodies characterised by their form
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H01B5/002 1 {Auxiliary arrangements}
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H01B5/004 2 {for protection against corona}
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H01B5/006 2 {for protection against vibrations}
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H01B5/008 1 {Fence-wire not otherwise provided for (wire fencing E04H17/02)}
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H01B5/02 1 Single bars, rods, wires, or strips
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H01B5/04 2 wound or coiled
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H01B5/06 1 Single tubes
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H01B5/08 1 Several wires or the like stranded in the form of a rope
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H01B5/10 2 stranded around a space, insulating material, or dissimilar conducting material
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H01B5/101 3 {stranded around a space}
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H01B5/102 3 {stranded around a high tensile strength core}
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H01B5/104 4 {composed of metallic wires, e.g. steel wires}
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H01B5/105 4 {composed of synthetic filaments, e.g. glass-fibres}
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H01B5/107 3 {stranded around a core supporting radial stresses, e.g. a tube, a wire helix}
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H01B5/108 3 {stranded around communication or control conductors}
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H01B5/12 1 Braided wires or the like
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H01B5/14 1 comprising conductive layers or films on insulating-supports
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H01B5/16 1 comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber (H01B1/14, H01B1/20 take precedence; insulating bodies with conductive admixtures H01B17/64; conductive paints C09D5/24)
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H01B7/00 0 Insulated conductors or cables characterised by their form
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H01B7/0009 1 {Details relating to the conductive cores}
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H01B7/0018 2 {Strip or foil conductors (H01B7/08 takes precedence)}
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H01B7/0027 2 {Liquid conductors}
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H01B7/0036 2 {Alkali metal conductors}
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H01B7/0045 1 {Cable-harnesses}
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H01B7/0054 1 {Cables with incorporated electric resistances}
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H01B7/0063 1 {Ignition cables}
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H01B7/0072 1 {Electrical cables comprising fluid supply conductors}
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H01B7/0081 1 {Cables of rigid construction (rigid-tube cables H01B7/16)}
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H01B7/009 1 {Cables with built-in connecting points or with predetermined areas for making deviations}
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H01B7/02 1 Disposition of insulation
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H01B7/0208 2 {Cables with several layers of insulating material}
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H01B7/0216 3 {Two layers}
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H01B7/0225 3 {Three or more layers}
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H01B7/0233 2 {Cables with a predominant gas dielectric}
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H01B7/0241 2 {comprising one or more helical wrapped layers of insulation}
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H01B7/025 3 {comprising in addition one or more other layers of non-helical wrapped insulation}
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H01B7/0258 2 {comprising one or more longitudinal lapped layers of insulation}
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H01B7/0266 2 {comprising one or more braided layers of insulation}
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H01B7/0275 2 {comprising one or more extruded layers of insulation}
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H01B7/0283 3 {comprising in addition one or more other layers of non-extruded insulation}
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H01B7/0291 2 {comprising two or more layers of insulation having different electrical properties}
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H01B7/04 1 Flexible cables, conductors, or cords, e.g. trailing cables
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H01B7/041 2 {attached to mobile objects, e.g. portable tools, elevators, mining equipment, hoisting cables}
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H01B7/043 2 {attached to flying objects, e.g. aircraft towline, cables connecting an aerodyne to the ground}
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H01B7/045 2 {attached to marine objects, e.g. buoys, diving equipment, aquatic probes, marine towline}
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H01B7/046 2 {attached to objects sunk in bore holes, e.g. well drilling means, well pumps}
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H01B7/048 2 {for implantation into a human or animal body, e.g. pacemaker leads}
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H01B7/06 1 Extensible conductors or cables, e.g. self-coiling cords
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H01B7/065 2 {having the shape of an helix}
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H01B7/08 1 Flat or ribbon cables
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H01B7/0807 2 {Twin conductor or cable}
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H01B7/0815 2 {covered with gluten for wall-fixing}
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H01B7/0823 2 {Parallel wires, incorporated in a flat insulating profile}
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H01B7/083 2 {Parallel wires, incorporated in a fabric}
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H01B7/0838 2 {Parallel wires, sandwiched between two insulating layers}
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H01B7/0846 2 {Parallel wires, fixed upon a support layer}
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H01B7/0853 2 {Juxtaposed parallel wires, fixed to each other without a support layer}
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H01B7/0861 2 {comprising one or more screens}
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H01B7/0869 2 {comprising one or more armouring, tensile- or compression-resistant elements}
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H01B7/0876 2 {comprising twisted pairs}
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H01B7/0884 2 {comprising connection wire loops}
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H01B7/0892 2 {incorporated in a cable of non-flat configuration}
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H01B7/10 1 Contact cables, i.e. having conductors which may be brought into contact by distortion of the cable
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H01B7/102 2 {responsive to heat}
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H01B7/104 2 {responsive to pressure}
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H01B7/106 3 {comprising concentric conductors}
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H01B7/108 3 {comprising parallel conductors}
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H01B7/12 1 Floating cables
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H01B7/14 1 Submarine cables
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H01B7/145 2 {associated with hydrodynamic bodies}
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H01B7/16 1 Rigid-tube cables
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H01B7/17 1 Protection against damage caused by external factors, e.g. sheaths or armouring
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H01B7/18 2 {Protection against damage caused} by wear, mechanical force or pressure; {Sheaths; Armouring}
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H01B7/1805 3 {Protections not provided for in groups H01B7/182 - H01B7/26}
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H01B7/181 4 {composed of beads or rings}
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H01B7/1815 4 {composed of longitudinal inserts}
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H01B7/182 3 {comprising synthetic filaments}
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H01B7/1825 4 {forming part of a high tensile strength core}
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H01B7/183 4 {forming part of an outer sheath}
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H01B7/1835 3 {Sheaths comprising abrasive charges}
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H01B7/184 3 {Sheaths comprising grooves, ribs or other projections}
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H01B7/1845 3 {Sheaths comprising perforations}
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H01B7/185 3 {Sheaths comprising internal cavities or channels}
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H01B7/1855 3 {Sheaths comprising helical wrapped non-metallic layers}
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H01B7/186 3 {Sheaths comprising longitudinal lapped non-metallic layers}
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H01B7/1865 3 {Sheaths comprising braided non-metallic layers}
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H01B7/187 3 {Sheaths comprising extruded non-metallic layers}
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H01B7/1875 3 {Multi-layer sheaths}
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H01B7/188 4 {Inter-layer adherence promoting means}
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H01B7/1885 4 {Inter-layer adherence preventing means}
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H01B7/189 3 {Radial force absorbing layers providing a cushioning effect (H01B7/185 takes precedence)}
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H01B7/1895 3 {Internal space filling-up means}
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H01B7/20 3 Metal tubes, e.g. lead sheaths
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H01B7/201 4 {Extruded metal tubes}
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H01B7/202 4 {Longitudinal lapped metal tubes}
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H01B7/204 4 {composed of lead}
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H01B7/205 4 {composed of aluminium}
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H01B7/207 4 {composed of iron or steel}
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H01B7/208 4 {composed of composite laminated metals}
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H01B7/22 3 Metal wires or tapes, e.g. made of steel
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H01B7/221 4 {Longitudinally placed metal wires or tapes}
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H01B7/223 5 {forming part of a high tensile strength core}
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H01B7/225 5 {forming part of an outer sheath}
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H01B7/226 4 {Helicoidally wound metal wires or tapes}
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H01B7/228 4 {Metal braid}
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H01B7/24 3 Devices affording localised protection against mechanical force or pressure
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H01B7/26 3 Reduction of losses in sheaths or armouring
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H01B7/28 2 {Protection against damage caused} by moisture, corrosion, chemical attack or weather
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H01B7/2806 3 {Protection against damage caused by corrosion}
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H01B7/2813 3 {Protection against damage caused by electrical, chemical or water tree deterioration}
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H01B7/282 3 Preventing penetration of fluid {, e.g. water or humidity,} into conductor or cable
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H01B7/2825 4 {using a water impermeable sheath}
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H01B7/285 4 by completely or partially filling interstices in the cable
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H01B7/2855 5 {using foamed plastic}
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H01B7/288 5 using hygroscopic material or material swelling in the presence of liquid
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H01B7/29 2 Protection against damage caused by extremes of temperature or by flame {(heat dissipation or conduction H01B7/42)}
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H01B7/292 3 {using material resistant to heat}
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H01B7/295 3 using material resistant to flame
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H01B7/30 1 with arrangements for reducing conductor losses when carrying alternating current, e.g. due to skin effect
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H01B7/303 2 {Conductors comprising interwire insulation}
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H01B7/306 2 {Transposed conductors}
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H01B7/32 1 with arrangements for indicating defects, e.g. breaks or leaks
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H01B7/322 2 {comprising humidity sensing means}
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H01B7/324 2 {comprising temperature sensing means}
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H01B7/326 2 {comprising pressure sensing means}
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H01B7/328 2 {comprising violation sensing means}
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H01B7/36 1 with distinguishing or length marks
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H01B7/361 2 {being the colour of the insulation or conductor}
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H01B7/363 2 {being the form of the insulation or conductor}
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H01B7/365 2 {being indicia imposed on the insulation or conductor}
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H01B7/366 2 {being a tape, thread or wire extending the full length of the conductor or cable}
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H01B7/368 2 {being a sleeve, ferrule, tag, clip, label or short length strip}
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H01B7/38 1 with arrangements for facilitating removal of insulation
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H01B7/385 2 {comprising a rip cord or wire}
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H01B7/40 1 with arrangements for facilitating mounting or securing
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H01B7/42 1 with arrangements for heat dissipation or conduction
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H01B7/421 2 {for heat dissipation}
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H01B7/423 3 {using a cooling fluid}
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H01B7/425 4 {the construction being bendable}
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H01B7/426 3 {using cooling fins, ribs}
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H01B7/428 2 {Heat conduction}
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H01B9/00 0 Power cables
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H01B9/001 1 {Power supply cables for the electrodes of electric-welding apparatus or electric-arc furnaces}
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H01B9/003 1 {including electrical control or communication wires}
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H01B9/005 1 {including optical transmission elements}
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H01B9/006 1 {Constructional features relating to the conductors}
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H01B9/008 1 {for overhead application}
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H01B9/02 1 with screens or conductive layers, e.g. for avoiding large potential gradients
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H01B9/021 2 {Features relating to screening tape per se}
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H01B9/022 2 {composed of longitudinal lapped tape-conductors}
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H01B9/023 2 {composed of helicoidally wound tape-conductors}
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H01B9/024 2 {composed of braided metal wire}
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H01B9/025 2 {composed of helicoidally wound wire-conductors}
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H01B9/026 2 {composed of longitudinally posed wire-conductors}
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H01B9/027 2 {composed of semi-conducting layers}
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H01B9/028 2 {with screen grounding means, e.g. drain wires}
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H01B9/029 2 {Screen interconnecting circuits}
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H01B9/04 1 Concentric cables
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H01B9/06 1 Gas-pressure cables; Oil-pressure cables; Cables for use in conduits under fluid pressure
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H01B9/0605 2 {Gas-pressure cables with enclosed conduits}
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H01B9/0611 2 {Oil-pressure cables}
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H01B9/0616 2 {Oil-pressure cables with enclosed conduits}
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H01B9/0622 2 {Cables for use in conduits under gas-pressure}
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H01B9/0627 2 {Cables for use in conduits under oil-pressure}
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H01B9/0633 2 {Expansion-absorbing apparatus, enclosed within the cable}
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H01B9/0638 2 {Features relating to the conductors of gas-pressure cables}
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H01B9/0644 2 {Features relating to the dielectric of gas-pressure cables}
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H01B9/065 3 {Tubular insulation}
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H01B9/0655 3 {Helically wrapped insulation}
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H01B9/0661 3 {Longitudinally wrapped insulation}
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H01B9/0666 3 {Discontinuous insulation}
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H01B9/0672 4 {having the shape of a disc}
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H01B9/0677 2 {Features relating to the enclosing sheath of gas-pressure cables}
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H01B9/0683 2 {Features relating to the conductors of oil-pressure cables}
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H01B9/0688 2 {Features relating to the dielectric of oil-pressure cables}
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H01B9/0694 2 {Features relating to the enclosing sheath of oil-pressure cables}
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H01B11/00 0 Communication cables or conductors
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H01B11/002 1 {Pair constructions}
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H01B11/005 1 {Quad constructions}
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H01B11/007 1 {for overhead application}
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H01B11/02 1 Cables with twisted pairs or quads
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H01B11/04 2 with pairs or quads mutually positioned to reduce cross-talk
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H01B11/06 2 with means for reducing effects of electromagnetic or electrostatic disturbances, e.g. screens
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H01B11/08 3 Screens specially adapted for reducing cross-talk
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H01B11/085 4 {composed of longitudinal tape conductors}
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H01B11/10 3 Screens specially adapted for reducing interference from external sources
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H01B11/1008 4 {Features relating to screening tape per se}
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H01B11/1016 4 {composed of a longitudinal lapped tape-conductor}
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H01B11/1025 4 {composed of a helicoidally wound tape-conductor}
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H01B11/1033 4 {composed of a wire-braided conductor}
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H01B11/1041 4 {composed of a helicoidally wound wire-conductor}
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H01B11/105 4 {composed of a longitudinally posed wire-conductor}
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H01B11/1058 4 {using a coating, e.g. a loaded polymer, ink or print}
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H01B11/1066 5 {the coating containing conductive or semiconductive material}
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H01B11/1075 6 {the coating being applied by printing}
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H01B11/1083 5 {the coating containing magnetic material}
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H01B11/1091 4 {with screen grounding means, e.g. drain wires}
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H01B11/12 2 Arrangements for exhibiting specific transmission characteristics
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H01B11/125 3 {Specially adapted cable interconnections}
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H01B11/14 3 Continuously inductively loaded cables, e.g. Krarup cables
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H01B11/143 4 {using helically wound magnetic tape}
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H01B11/146 4 {using magnetically loaded coatings}
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H01B11/16 3 Cables, e.g. submarine cables, with coils or other devices incorporated during cable manufacture
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H01B11/18 1 Coaxial cables; Analogous cables having more than one inner conductor within a common outer conductor
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H01B11/1804 2 {Construction of the space inside the hollow inner conductor}
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H01B11/1808 2 {Construction of the conductors}
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H01B11/1813 3 {Co-axial cables with at least one braided conductor}
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H01B11/1817 3 {Co-axial cables with at least one metal deposit conductor}
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H01B11/1821 3 {Co-axial cables with at least one wire-wound conductor}
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H01B11/1826 3 {Co-axial cables with at least one longitudinal lapped tape-conductor}
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H01B11/183 3 {Co-axial cables with at least one helicoidally wound tape-conductor}
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H01B11/1834 2 {Construction of the insulation between the conductors}
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H01B11/1839 3 {of cellular structure}
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H01B11/1843 3 {of tubular structure}
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H01B11/1847 3 {of helical wrapped structure}
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H01B11/1852 3 {of longitudinal lapped structure}
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H01B11/1856 3 {Discontinuous insulation}
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H01B11/186 4 {having the shape of a disc}
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H01B11/1865 4 {having the shape of a bead}
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H01B11/1869 2 {Construction of the layers on the outer side of the outer conductor}
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H01B11/1873 2 {Measures for the conductors, in order to fix the spacers}
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H01B11/1878 2 {Special measures in order to improve the flexibility}
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H01B11/1882 2 {Special measures in order to improve the refrigeration}
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H01B11/1886 2 {Special measures in order to improve the centration of the inner conductor}
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H01B11/1891 2 {comprising auxiliary conductors}
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H01B11/1895 2 {Particular features or applications}
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H01B11/20 2 Cables having a multiplicity of coaxial lines
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H01B11/203 3 {forming a flat arrangement}
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H01B11/206 3 {Tri-conductor coaxial cables}
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H01B11/22 1 Cables including at least one electrical conductor together with optical fibres
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H01B12/00 0 Superconductive or hyperconductive conductors, cables, or transmission lines
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H01B12/02 1 characterised by their form
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H01B12/04 2 Single wire
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H01B12/06 2 Films or wires on bases or cores
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H01B12/08 2 Stranded or braided wires
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H01B12/10 2 Multi-filaments embedded in normal conductors
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H01B12/12 2 Hollow conductors
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H01B12/14 1 characterised by the disposition of thermal insulation
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H01B12/16 1 characterised by cooling
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H01B13/00 0 Apparatus or processes specially adapted for manufacturing conductors or cables
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H01B13/0003 1 {for feeding conductors or cables}
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H01B13/0006 1 {for reducing the size of conductors or cables}
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H01B13/0009 1 {for forming corrugations on conductors or cables}
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H01B13/0013 1 {for embedding wires in plastic layers}
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H01B13/0016 1 {for heat treatment}
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H01B13/002 2 {for heat extraction}
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H01B13/0023 1 {for welding together plastic insulated wires side-by-side}
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H01B13/0026 1 {Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal}
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H01B13/003 1 {using irradiation}
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H01B13/0033 1 {by electrostatic coating}
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H01B13/0036 1 {Details}
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H01B13/004 1 for manufacturing rigid-tube cables
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H01B13/008 1 for manufacturing extensible conductors or cables
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H01B13/012 1 for manufacturing wire harnesses
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H01B13/01209 2 {Details}
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H01B13/01218 2 {the wires being disposed by hand}
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H01B13/01227 3 {using a layout board}
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H01B13/01236 2 {the wires being disposed by machine}
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H01B13/01245 3 {using a layout board}
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H01B13/01254 2 {Flat-harness manufacturing}
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H01B13/01263 2 {Tying, wrapping, binding, lacing, strapping or sheathing harnesses}
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H01B13/01272 3 {Harness tying apparatus}
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H01B13/01281 3 {Harness wrapping apparatus}
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H01B13/0129 3 {Sheathing harnesses with foil material}
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H01B13/016 1 for manufacturing co-axial cables (applying discontinuous insulation H01B13/20)
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H01B13/0162 2 {of the central conductor}
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H01B13/0165 2 {of the layers outside the outer conductor}
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H01B13/0167 2 {After-treatment}
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H01B13/02 1 Stranding-up
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H01B13/0207 2 {Details; Auxiliary devices}
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H01B13/0214 2 {by a twisting pay-off device}
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H01B13/0221 2 {by a twisting take-up device}
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H01B13/0228 2 {by a twisting pay-off and take-up device}
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H01B13/0235 2 {by a twisting device situated between a pay-off device and a take-up device}
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H01B13/0242 3 {being an accumulator}
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H01B13/025 4 {of tubular construction}
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H01B13/0257 3 {being a perforated disc}
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H01B13/0264 3 {being rollers, pulleys, drums or belts (H01B13/0242 takes precedence)}
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H01B13/0271 2 {Alternate stranding processes}
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H01B13/0278 2 {Stranding machines comprising a transposing mechanism}
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H01B13/0285 2 {Pretreatment}
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H01B13/0292 2 {After-treatment}
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H01B13/04 2 Mutually positioning pairs or quads to reduce cross-talk
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H01B13/06 1 Insulating conductors or cables (H01B13/32 takes precedence)
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H01B13/062 2 {by pulling on an insulating sleeve}
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H01B13/065 2 {Insulating conductors with lacquers or enamels}
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H01B13/067 2 {Insulating coaxial cables (H01B13/20 takes precedence)}
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H01B13/08 2 by winding
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H01B13/0808 3 {Hand-held devices}
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H01B13/0816 3 {Apparatus having a coaxial rotation of the supply reels about the conductor or cable}
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H01B13/0825 3 {Apparatus having a planetary rotation of the supply reels around the conductor or cable}
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H01B13/0833 4 {the supply reel axis being arranged parallel to the conductor or cable axis}
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H01B13/0841 4 {the supply reel axis being arranged perpendicular to the conductor or cable axis}
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H01B13/085 3 {Apparatus having the supply reels in a fixed position, the conductor or cable rotating about its own axis}
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H01B13/0858 3 {Details of winding apparatus; Auxiliary devices}
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H01B13/0866 4 {Brakes or tension regulating means}
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H01B13/0875 4 {Detecting breakage or run-out of winding material}
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H01B13/0883 3 {Pretreatment}
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H01B13/0891 3 {After-treatment}
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H01B13/10 2 by longitudinal lapping
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H01B13/103 3 {combined with pressing of plastic material around the conductors}
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H01B13/106 3 {the conductor having a rectangular cross-section}
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H01B13/12 2 by applying loose fibres
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H01B13/14 2 by extrusion {(extrusion in general B29C48/00)}
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H01B13/141 3 {of two or more insulating layers}
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H01B13/142 3 {of cellular material}
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H01B13/143 3 {with a special opening of the extrusion head}
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H01B13/144 4 {Heads for simultaneous extrusion on two or more conductors}
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H01B13/145 3 {Pretreatment or after-treatment}
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H01B13/146 3 {Controlling the extrusion apparatus dependent on the capacitance or the thickness of the insulating material (measuring thickness G01B; testing during manufacturing G01R31/59)}
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H01B13/147 3 {Feeding of the insulating material}
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H01B13/148 3 {Selection of the insulating material therefor}
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H01B13/16 2 by passing through or dipping in a liquid bath; by spraying
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H01B13/165 3 {by spraying}
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H01B13/18 2 Applying discontinuous insulation, e.g. discs, beads
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H01B13/185 3 {by periodically constricting an insulating sleeve}
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H01B13/20 3 for concentric or coaxial cables
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H01B13/202 4 {by molding spacers}
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H01B13/204 4 {by punching spacers}
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H01B13/206 4 {by forming a helical web}
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H01B13/208 4 {by mechanically removing parts of a continuous insulation}
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H01B13/22 1 Sheathing; Armouring; Screening; Applying other protective layers (H01B13/32 takes precedence)
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H01B13/221 2 {filling-up interstices}
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H01B13/222 2 {by electro-plating}
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H01B13/224 2 {by drawing a cable core into an oversized tube by means of a tow line}
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H01B13/225 2 {Screening coaxial cables}
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H01B13/227 2 {Pretreatment}
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H01B13/228 2 {After-treatment}
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H01B13/24 2 by extrusion {(extrusion of cables with plastic material in general B29C48/15)}
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H01B13/245 3 {of metal layers}
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H01B13/26 2 by winding, braiding or longitudinal lapping
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H01B13/2606 3 {by braiding}
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H01B13/2613 3 {by longitudinal lapping}
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H01B13/262 4 {of an outer metallic screen}
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H01B13/2626 4 {of a coaxial cable outer conductor}
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H01B13/2633 4 {Bending and welding of a metallic screen}
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H01B13/264 5 {Details of the welding stage}
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H01B13/2646 4 {Bending and soldering of a metallic screen}
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H01B13/2653 5 {Details of the soldering stage}
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H01B13/266 4 {Bending and adhesively bonding of a metallic screen}
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H01B13/2666 5 {Details of the bonding stage}
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H01B13/2673 4 {of a compartment separating metallic screen}
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H01B13/268 4 {of a non-metallic sheet}
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H01B13/2686 4 {Pretreatment}
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H01B13/2693 4 {After-treatment}
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H01B13/28 1 Applying continuous inductive loading, e.g. Krarup loading
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H01B13/282 2 {by winding}
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H01B13/285 2 {by extrusion}
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H01B13/287 2 {by passing through a coating bath}
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H01B13/30 1 Drying; Impregnating (H01B13/32 takes precedence)
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H01B13/32 1 Filling or coating with impervious material
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H01B13/321 2 {the material being a powder}
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H01B13/322 2 {the material being a liquid, jelly-like or viscous substance}
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H01B13/323 3 {using a filling or coating head}
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H01B13/324 4 {in combination with a vacuum chamber}
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H01B13/325 4 {in combination with vibration generating means}
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H01B13/326 4 {Material preparing or feeding devices}
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H01B13/327 3 {using a filling or coating cone or die}
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H01B13/328 3 {using a filling or coating bath}
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H01B13/329 2 {the material being a foam}
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H01B13/34 1 for marking conductors or cables
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H01B13/341 2 {using marking wheels, discs, rollers, drums, balls or belts}
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H01B13/342 2 {by applying marked tape, thread or wire on the full length of the conductor or cable}
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H01B13/344 2 {by applying sleeves, ferrules, tags, clips, labels or short length strips}
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H01B13/345 2 {by spraying, ejecting or dispensing marking fluid}
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H01B13/347 3 {Electrostatic deflection of the fluid jets}
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H01B13/348 2 {using radiant energy, e.g. a laser beam}
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H01B15/00 0 Apparatus or processes for salvaging material from cables (for removing insulation from conductors H02G1/12)
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H01B15/001 1 {by cooling down}
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H01B15/003 1 {by heating up}
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H01B15/005 1 {by cutting}
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H01B15/006 2 {Making a longitudinal cut}
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H01B15/008 1 {by crushing}
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H01B17/00 0 Insulators or insulating bodies characterised by their form
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H01B17/005 1 {Insulators structurally associated with built-in electrical equipment}
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H01B17/02 1 Suspension insulators; Strain insulators
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H01B17/04 2 Chains; Multiple chains
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H01B17/06 2 Fastening of insulator to support, to conductor, or to adjoining insulator
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H01B17/08 3 by cap-and-bolt
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H01B17/10 3 by intermediate link
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H01B17/12 2 Special features of strain insulators
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H01B17/14 1 Supporting insulators (pin insulators H01B17/20; apertured insulators H01B17/24)
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H01B17/145 2 {Insulators, poles, handles, or the like in electric fences}
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H01B17/16 2 Fastening of insulators to support, to conductor, or to adjoining insulator
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H01B17/18 2 for very heavy conductors, e.g. bus-bars, rails
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H01B17/20 1 Pin insulators
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H01B17/22 2 Fastening of conductors to insulator
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H01B17/24 1 Insulators apertured for fixing by nail, screw, wire, or bar, e.g. diabolo, bobbin
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H01B17/26 1 Lead-in insulators; Lead-through insulators
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H01B17/265 2 {Fastening of insulators to support (H01B17/301 takes precedence)}
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H01B17/28 2 Capacitor type
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H01B17/30 2 Sealing
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H01B17/301 3 {Sealing of insulators to support}
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H01B17/303 3 {Sealing of leads to lead-through insulators}
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H01B17/305 4 {by embedding in glass or ceramic material}
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H01B17/306 4 {by embedding in material other than glass or ceramics}
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H01B17/308 4 {by compressing packing material}
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H01B17/32 1 Single insulators consisting of two or more dissimilar insulating bodies
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H01B17/325 2 {comprising a fibre-reinforced insulating core member}
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H01B17/34 1 Insulators containing liquid, e.g. oil
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H01B17/36 1 Insulators having evacuated or gas-filled spaces
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H01B17/38 1 Fittings, e.g. caps; Fastenings therefor
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H01B17/40 2 Cementless fittings
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H01B17/42 1 Means for obtaining improved distribution of voltage (capacitor-type lead-through insulators H01B17/28); Protection against arc discharges
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H01B17/44 2 Structural association of insulators with corona rings
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H01B17/46 2 Means for providing an external arc-discharge path
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H01B17/48 2 over chains or other serially-arranged insulators
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H01B17/50 1 with surfaces specially treated for preserving insulating properties, e.g. for protection against moisture, dirt, or the like
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H01B17/52 1 having cleaning devices (H01B17/54 takes precedence)
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H01B17/525 2 {Self-cleaning, e.g. by shape or disposition of screens}
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H01B17/54 1 having heating or cooling devices
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H01B17/56 1 Insulating bodies
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H01B17/58 2 Tubes, sleeves, beads, or bobbins through which the conductor passes
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H01B17/583 3 {Grommets; Bushings}
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H01B17/586 4 {with strain relief arrangements}
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H01B17/60 2 Composite insulating bodies
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H01B17/62 2 Insulating-layers or insulating-films on metal bodies
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H01B17/64 2 with conductive admixtures, inserts or layers
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H01B17/66 2 Joining insulating bodies together, e.g. by bonding
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H01B19/00 0 Apparatus or processes specially adapted for manufacturing insulators or insulating bodies {(manufacture of porcelain for electric insulation C04B33/26)}
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H01B19/02 1 Drying; Impregnating
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H01B19/04 1 Treating the surfaces, e.g. applying coatings
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H01C RESISTORS
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H01C1/00 0 Details
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H01C1/01 1 Mounting; Supporting
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H01C1/012 2 the base extending along and imparting rigidity or reinforcement to the resistive element (H01C1/016 takes precedence; the resistive element being formed in two or more coils or loops as a spiral, helical or toroidal winding H01C3/18, H01C3/20; the resistive element being formed as one or more layers or coatings on a base H01C7/00)
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H01C1/014 2 the resistor being suspended between and being supported by two supporting sections (H01C1/016 takes precedence)
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H01C1/016 2 with compensation for resistor expansion or contraction
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H01C1/02 1 Housing; Enclosing; Embedding; Filling the housing or enclosure
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H01C1/022 2 the housing or enclosure being openable or separable from the resistive element
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H01C1/024 2 the housing or enclosure being hermetically sealed (H01C1/028, H01C1/032, H01C1/034 take precedence)
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H01C1/026 3 with gaseous or vacuum spacing between the resistive element and the housing or casing
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H01C1/028 2 the resistive element being embedded in insulation with outer enclosing sheath
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H01C1/03 3 with powdered insulation
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H01C1/032 2 plural layers surrounding the resistive element (H01C1/028 takes precedence)
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H01C1/034 2 the housing or enclosure being formed as coating or mould without outer sheath (H01C1/032 takes precedence)
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H01C1/036 3 on wound resistive element
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H01C1/04 1 Arrangements of distinguishing marks, e.g. colour coding
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H01C1/06 1 Electrostatic or electromagnetic shielding arrangements
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H01C1/08 1 Cooling, heating or ventilating arrangements
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H01C1/082 2 using forced fluid flow
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H01C1/084 2 using self-cooling, e.g. fins, heat sinks
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H01C1/12 1 Arrangements of current collectors
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H01C1/125 2 of fluid contacts
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H01C1/14 1 Terminals or tapping points {or electrodes} specially adapted for resistors (in general H01R); Arrangements of terminals or tapping points {or electrodes} on resistors
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H01C1/1406 2 {Terminals or electrodes formed on resistive elements having positive temperature coefficient}
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H01C1/1413 2 {Terminals or electrodes formed on resistive elements having negative temperature coefficient}
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H01C1/142 2 the terminals or tapping points being coated on the resistive element
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H01C1/144 2 the terminals or tapping points being welded or soldered
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H01C1/146 2 the resistive element surrounding the terminal
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H01C1/148 2 the terminals embracing or surrounding the resistive element (H01C1/142 takes precedence)
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H01C1/16 1 Resistor networks not otherwise provided for
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H01C3/00 0 Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids
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H01C3/005 1 {Metallic glasses therefor}
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H01C3/02 1 arranged or constructed for reducing self-induction, capacitance or variation with frequency
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H01C3/04 1 Iron-filament ballast resistors; Other resistors having variable temperature coefficient
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H01C3/06 1 Flexible or folding resistors, whereby such a resistor can be looped or collapsed upon itself
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H01C3/08 1 Dimension or characteristic of resistive element changing gradually or in discrete steps from one terminal to another
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H01C3/10 1 the resistive element having zig-zag or sinusoidal configuration
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H01C3/12 2 lying in one plane
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H01C3/14 1 the resistive element being formed in two or more coils or loops continuously wound as a spiral, helical or toroidal winding (H01C3/02 - H01C3/12 take precedence)
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H01C3/16 2 including two or more distinct wound elements or two or more winding patterns
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H01C3/18 2 wound on a flat or ribbon base (H01C3/16 takes precedence)
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H01C3/20 2 wound on cylindrical or prismatic base (H01C3/16 takes precedence)
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H01C7/00 0 Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material (consisting of loose powdered or granular material H01C8/00 {; measuring deformation in a solid state using the change in resistance formed by printed-circuit technique G01B7/20; insulating materials H01B3/00; passive thin-film or thick-film semiconductor or solid state devices H01L27/00; resistors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/20}; resistors with a potential-jump barrier or surface barrier, e.g. field effect resistors H01L29/00; semiconductor devices sensitive to electromagnetic or corpuscular radiation, e.g. photoresistors, H01L31/00 {; ohmic resistance heating H05B3/00; printed circuits H05K}; devices using galvanomagnetic or similar magnetic effects, e.g. magnetic-field-controlled resistors, H10N50/00; devices using superconductivity H10N60/00; solid state devices for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier H10N70/00; bulk negative resistance effect devices H10N80/00)
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H01C7/001 1 {Mass resistors}
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H01C7/003 1 {Thick film resistors}
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H01C7/005 2 {Polymer thick films}
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H01C7/006 1 {Thin film resistors}
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H01C7/008 1 {Thermistors (H01C7/02 - H01C7/06 take precedence)}
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H01C7/02 1 having positive temperature coefficient {(ceramics C04B)}
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H01C7/021 2 {formed as one or more layers or coatings}
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H01C7/022 2 {mainly consisting of non-metallic substances (H01C7/021 takes precedence)}
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H01C7/023 3 {containing oxides or oxidic compounds, e.g. ferrites}
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H01C7/025 4 {Perovskites, e.g. titanates}
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H01C7/026 4 {Vanadium oxides or oxidic compounds, e.g. VOx}
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H01C7/027 2 {consisting of conducting or semi-conducting material dispersed in a non-conductive organic material}
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H01C7/028 2 {consisting of organic substances}
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H01C7/04 1 having negative temperature coefficient {(thermometers using resistive elements G01K7/16)}
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H01C7/041 2 {formed as one or more layers or coatings}
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H01C7/042 2 {mainly consisting of inorganic non-metallic substances (H01C7/041 takes precedence)}
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H01C7/043 3 {Oxides or oxidic compounds}
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H01C7/044 4 {Zinc or cadmium oxide}
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H01C7/045 4 {Perovskites, e.g. titanates}
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H01C7/046 4 {Iron oxides or ferrites}
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H01C7/047 4 {Vanadium oxides or oxidic compounds, e.g. VOx}
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H01C7/048 3 {Carbon or carbides}
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H01C7/049 2 {mainly consisting of organic or organo-metal substances (H01C7/041 takes precedence)}
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H01C7/06 1 including means to minimise changes in resistance with changes in temperature
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H01C7/10 1 voltage responsive, i.e. varistors
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H01C7/1006 2 {Thick film varistors}
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H01C7/1013 2 {Thin film varistors}
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H01C7/102 2 Varistor boundary, e.g. surface layers (H01C7/12 takes precedence)
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H01C7/105 2 Varistor cores (H01C7/12 takes precedence)
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H01C7/108 3 Metal oxide
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H01C7/112 4 ZnO type
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H01C7/115 4 Titanium dioxide- or titanate type
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H01C7/118 3 Carbide, e.g. SiC type
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H01C7/12 2 Overvoltage protection resistors {(series resistors structurally associated with spark gaps H01T1/16)}
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H01C7/123 3 {Arrangements for improving potential distribution}
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H01C7/126 3 {Means for protecting against excessive pressure or for disconnecting in case of failure}
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H01C7/13 1 current responsive
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H01C7/18 1 comprising a plurality of layers stacked between terminals
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H01C7/20 1 the resistive layer or coating being tapered
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H01C7/22 1 Elongated resistive element being bent or curved, e.g. sinusoidal, helical
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H01C8/00 0 Non-adjustable resistors consisting of loose powdered or granular conducting, or powdered or granular semi-conducting material
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H01C8/02 1 Coherers or like imperfect resistors for detecting electromagnetic waves
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H01C8/04 1 Overvoltage protection resistors; Arresters
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H01C10/00 0 Adjustable resistors
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H01C10/005 1 {Surface mountable, e.g. chip trimmer potentiometer}
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H01C10/02 1 Liquid resistors
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H01C10/025 2 {Electrochemical variable resistors (trimming resistors by electrolytic treatment H01C17/2412, H01C17/262)}
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H01C10/04 1 with specified mathematical relationship between movement of resistor actuating means and value of resistance, other than direct proportional relationship
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H01C10/06 1 adjustable by short-circuiting different amounts of the resistive element
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H01C10/08 2 with intervening conducting structure between the resistive element and the short-circuiting means, e.g. taps
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H01C10/10 1 adjustable by mechanical pressure or force
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H01C10/103 2 {by using means responding to magnetic or electric fields, e.g. by addition of magnetisable or piezoelectric particles to the resistive material, or by an electromagnetic actuator}
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H01C10/106 2 {on resistive material dispersed in an elastic material (H01C10/103 and H01C10/12 take precedence; for electric switches H01H1/029)}
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H01C10/12 2 by changing surface pressure between resistive masses or resistive and conductive masses, e.g. pile type
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H01C10/14 1 adjustable by auxiliary driving means
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H01C10/16 1 including plural resistive elements
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H01C10/18 2 including coarse and fine resistive elements
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H01C10/20 2 Contact structure or movable resistive elements being ganged
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H01C10/22 1 resistive element dimensions changing gradually in one direction, e.g. tapered resistive element (H01C10/04 takes precedence)
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H01C10/23 1 resistive element dimensions changing in a series of discrete, progressive steps
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H01C10/24 1 the contact moving along turns of a helical resistive element, or vica versa
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H01C10/26 1 resistive element moving (H01C10/16, H01C10/24 take precedence)
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H01C10/28 1 the contact rocking or rolling along resistive element or taps
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H01C10/30 1 the contact sliding along resistive element
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H01C10/301 2 {consisting of a wire wound resistor}
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H01C10/303 3 {the resistor being coated, e.g. lubricated, conductive plastic coated, i.e. hybrid potentiometer}
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H01C10/305 2 {consisting of a thick film}
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H01C10/306 3 {Polymer thick film, i.e. PTF}
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H01C10/308 2 {consisting of a thin film}
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H01C10/32 2 the contact moving in an arcuate path
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H01C10/34 3 the contact or the associated conducting structure riding on collector formed as a ring or portion thereof
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H01C10/345 4 {the collector and resistive track being situated in 2 parallel planes}
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H01C10/36 3 structurally combined with switching arrangements
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H01C10/363 4 {by axial movement of the spindle, e.g. pull-push switch (H01C10/366 takes precedence)}
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H01C10/366 4 {using an electromagnetic actuator}
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H01C10/38 2 the contact moving along a straight path
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H01C10/40 3 screw operated
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H01C10/42 4 the contact bridging and sliding along resistive element and parallel conducting bar or collector
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H01C10/44 3 the contact bridging and sliding along resistive element and parallel conducting bar or collector (H01C10/42 takes precedence)
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H01C10/46 1 Arrangements of fixed resistors with intervening connectors, e.g. taps (H01C10/28, H01C10/30 take precedence)
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H01C10/48 2 including contact movable in an arcuate path
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H01C10/50 1 structurally combined with switching arrangements (H01C10/36 takes precedence)
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H01C11/00 0 Non-adjustable liquid resistors
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H01C13/00 0 Resistors not provided for elsewhere
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H01C13/02 1 Structural combinations of resistors (impedance networks per se H03H)
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H01C17/00 0 Apparatus or processes specially adapted for manufacturing resistors (providing fillings for housings or enclosures H01C1/02; reducing insulation surrounding a resistor to powder H01C1/03; manufacture of thermally variable resistors H01C7/02, H01C7/04)
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H01C17/003 1 {using lithography, e.g. photolithography (lithographic compositions and processing in general G03F)}
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H01C17/006 1 {adapted for manufacturing resistor chips}
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H01C17/02 1 adapted for manufacturing resistors with envelope or housing
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H01C17/04 1 adapted for winding the resistive element
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H01C17/06 1 adapted for coating resistive material on a base
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H01C17/065 2 by thick film techniques, e.g. serigraphy
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H01C17/06506 3 {Precursor compositions therefor, e.g. pastes, inks, glass frits}
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H01C17/06513 4 {characterised by the resistive component}
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H01C17/0652 5 {containing carbon or carbides}
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H01C17/06526 5 {composed of metals}
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H01C17/06533 5 {composed of oxides}
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H01C17/0654 6 {Oxides of the platinum group}
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H01C17/06546 6 {Oxides of zinc or cadmium}
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H01C17/06553 5 {composed of a combination of metals and oxides}
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H01C17/0656 5 {composed of silicides (H01C17/0652 takes precedence)}
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H01C17/06566 5 {composed of borides (H01C17/0652 takes precedence)}
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H01C17/06573 4 {characterised by the permanent binder}
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H01C17/0658 5 {composed of inorganic material}
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H01C17/06586 5 {composed of organic material}
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H01C17/06593 4 {characterised by the temporary binder}
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H01C17/07 2 by resistor foil bonding, e.g. cladding
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H01C17/075 2 by thin film techniques {(H01C17/20 takes precedence)}
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H01C17/08 3 by vapour deposition
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H01C17/10 3 by flame spraying
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H01C17/12 3 by sputtering
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H01C17/14 3 by chemical deposition
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H01C17/16 4 using electric current
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H01C17/18 4 without using electric current
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H01C17/20 2 by pyrolytic processes
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H01C17/22 1 adapted for trimming
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H01C17/23 2 by opening or closing resistor geometric tracks of predetermined resistive values, {e.g. snapistors}
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H01C17/232 2 Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance
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H01C17/235 2 Initial adjustment of potentiometer parts for calibration
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H01C17/24 2 by removing or adding resistive material (H01C17/23, H01C17/232, H01C17/235 take precedence)
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H01C17/2404 3 {by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching}
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H01C17/2408 3 {by pulsed voltage erosion, e.g. spark erosion}
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H01C17/2412 3 {by electrolytic treatment, e.g. electroplating (for anodic oxydation H01C17/262)}
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H01C17/2416 3 {by chemical etching}
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H01C17/242 3 by laser {(trimming by laser in general B23K26/351)}
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H01C17/245 3 by mechanical means, e.g. sand blasting, cutting, ultrasonic treatment
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H01C17/26 2 by converting resistive material
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H01C17/262 3 {by electrolytic treatment, e.g. anodic oxydation}
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H01C17/265 3 {by chemical or thermal treatment, e.g. oxydation, reduction, annealing (etching H01C17/2416)}
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H01C17/267 4 {by passage of voltage pulses or electric current}
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H01C17/28 1 adapted for applying terminals
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H01C17/281 2 {by thick film techniques}
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H01C17/283 3 {Precursor compositions therefor, e.g. pastes, inks, glass frits}
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H01C17/285 4 {applied to zinc or cadmium oxide resistors}
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H01C17/286 4 {applied to TiO2 or titanate resistors}
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H01C17/288 2 {by thin film techniques}
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H01C17/30 1 adapted for baking
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H01F MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites C04B35/26; alloys C22C {; construction of loading coils H01B}; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; thermomagnetic devices H10N15/00)
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H01F1/00 0 Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
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H01F1/0009 1 {Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature (H01F1/0036 takes precedence)}
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H01F1/0018 1 {Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis (H01F1/0036 takes precedence)}
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H01F1/0027 1 {Thick magnetic films (forming thick magnetic films H01F41/16)}
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H01F1/0036 1 {showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity, (H01F1/153, H01F1/42 and H01F10/00 take precedence; magnetoresistive sensors G01D5/16, G01R33/06; magnetoresistive recording G11B5/39; magnetic-field-controlled resistors H10N50/10)}
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H01F1/0045 2 {Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use (preparation of fullerenes in general C01B32/15)}
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H01F1/0054 3 {Coated nanoparticles, e.g. nanoparticles coated with organic surfactant}
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H01F1/0063 3 {in a non-magnetic matrix, e.g. granular solids (granular films H01F10/007)}
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H01F1/0072 2 {one dimensional, i.e. linear or dendritic nanostructures}
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H01F1/0081 3 {in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane}
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H01F1/009 2 {bidimensional, e.g. nanoscale period nanomagnet arrays (H01F10/007 takes precedence)}
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H01F1/01 1 of inorganic materials (H01F1/44 takes precedence)
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H01F1/012 2 {adapted for magnetic entropy change by magnetocaloric effect, e.g. used as magnetic refrigerating material (refrigeration systems using magnetic effects F25B21/00)}
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H01F1/015 3 {Metals or alloys}
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H01F1/017 3 {Compounds}
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H01F1/03 2 characterised by their coercivity {(H01F1/40 takes precedence)}
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H01F1/0302 3 {characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions}
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H01F1/0304 4 {adapted for large Barkhausen jumps or domain wall rotations, e.g. WIEGAND or MATTEUCCI effect (H01F1/143 and H01F1/15391 take precedence)}
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H01F1/0306 4 {Metals or alloys, e.g. LAVES phase alloys of the MgCu2-type (H01F1/0304 takes precedence)}
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H01F1/0308 5 {with magnetic shape memory [MSM], i.e. with lattice transformations driven by a magnetic field, e.g. Heusler alloys}
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H01F1/0311 4 {Compounds (H01F1/0304 takes precedence)}
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H01F1/0313 5 {Oxidic compounds}
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H01F1/0315 6 {Ferrites}
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H01F1/0317 6 {Manganites}
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H01F1/032 3 of hard-magnetic materials
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H01F1/04 4 metals or alloys
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H01F1/047 5 Alloys characterised by their composition
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H01F1/053 6 containing rare earth metals
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H01F1/0533 7 {in a bonding agent}
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H01F1/0536 7 {sintered}
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H01F1/055 7 and magnetic transition metals, e.g. SmCo5
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H01F1/0551 8 {in the form of particles, e.g. rapid quenched powders or ribbon flakes}
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H01F1/0552 9 {with a protective layer}
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H01F1/0553 8 {obtained by reduction or by hydrogen decrepitation or embrittlement}
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H01F1/0555 8 {pressed, sintered or bonded together}
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H01F1/0557 9 {sintered}
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H01F1/0558 9 {bonded together}
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H01F1/057 8 and IIIa elements, e.g. Nd2Fe14B
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H01F1/0571 9 {in the form of particles, e.g. rapid quenched powders or ribbon flakes}
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H01F1/0572 10 {with a protective layer}
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H01F1/0573 10 {obtained by reduction or by hydrogen decrepitation or embrittlement}
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H01F1/0574 10 {obtained by liquid dynamic compaction}
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H01F1/0575 10 {pressed, sintered or bonded together}
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H01F1/0576 11 {pressed, e.g. hot working}
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H01F1/0577 11 {sintered}
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H01F1/0578 11 {bonded together}
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H01F1/0579 9 {with exchange spin coupling between hard and soft nanophases, e.g. nanocomposite spring magnets}
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H01F1/058 8 and IVa elements, e.g. Gd2Fe14C
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H01F1/059 8 and Va elements, e.g. Sm2Fe17N2
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H01F1/0593 9 {of tetragonal ThMn12-structure}
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H01F1/0596 9 {of rhombic or rhombohedral Th2Zn17 structure or hexagonal Th2Ni17 structure}
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H01F1/06 5 in the form of particles, e.g. powder (H01F1/047 takes precedence {; record carriers G11B5/70605})
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H01F1/061 6 {with a protective layer}
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H01F1/063 6 {with a non magnetic core}
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H01F1/065 6 {obtained by a reduction}
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H01F1/066 6 {obtained by liquid dynamic compaction}
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H01F1/068 6 {having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] (nano)particles}
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H01F1/08 6 pressed, sintered, or bound together
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H01F1/09 4 mixtures of metallic and non-metallic particles; metallic particles having oxide skin
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H01F1/10 4 non-metallic substances, e.g. ferrites {, e.g. [(Ba,Sr)O(Fe2O3)6] ferrites with hexagonal structure}
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H01F1/11 5 in the form of particles {(for magnetic record carriers G11B5/70626)}
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H01F1/111 6 {with a non-magnetic core}
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H01F1/112 6 {with a skin (H01F1/113 takes precedence)}
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H01F1/113 6 in a bonding agent
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H01F1/117 7 Flexible bodies
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H01F1/12 3 of soft-magnetic materials
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H01F1/14 4 metals or alloys
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H01F1/143 5 {in the form of wires (H01F1/147 takes precedence)}
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H01F1/147 5 Alloys characterised by their composition {(treatment thereof for enhancing their electromagnetic properties C21D8/12)}
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H01F1/14708 6 {Fe-Ni based alloys (pure Fe or Ni H01F1/14, H01F1/16 or H01F1/20)}
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H01F1/14716 7 {in the form of sheets}
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H01F1/14733 7 {in the form of particles}
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H01F1/14741 8 {pressed, sintered or bonded together}
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H01F1/1475 9 {the particles being insulated}
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H01F1/14758 10 {by macromolecular organic substances}
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H01F1/14766 6 {Fe-Si based alloys}
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H01F1/14775 7 {in the form of sheets}
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H01F1/14783 8 {with insulating coating}
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H01F1/14791 7 {Fe-Si-Al based alloys, e.g. Sendust}
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H01F1/153 6 Amorphous metallic alloys, e.g. glassy metals {(making ferrous amorphous alloys C22C33/003)}
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H01F1/15308 7 {based on Fe/Ni (H01F1/15325 takes precedence)}
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H01F1/15316 7 {based on Co (H01F1/15325 takes precedence)}
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H01F1/15325 7 {containing rare earths}
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H01F1/15333 7 {containing nanocrystallites, e.g. obtained by annealing}
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H01F1/15341 7 {Preparation processes therefor}
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H01F1/1535 8 {by powder metallurgy, e.g. spark erosion}
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H01F1/15358 7 {Making agglomerates therefrom, e.g. by pressing}
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H01F1/15366 8 {using a binder}
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H01F1/15375 9 {using polymers}
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H01F1/15383 7 {Applying coatings thereon (H01F1/15366 takes precedence)}
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H01F1/15391 7 {Elongated structures, e.g. wires}
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H01F1/16 5 in the form of sheets (H01F1/147 takes precedence)
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H01F1/20 5 in the form of particles, e.g. powder (H01F1/147 takes precedence)
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H01F1/22 6 pressed, sintered, or bound together
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H01F1/24 7 the particles being insulated
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H01F1/28 6 dispersed or suspended in a bonding agent
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H01F1/33 4 mixtures of metallic and non-metallic particles; metallic particles having oxide skin
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H01F1/34 4 non-metallic substances, e.g. ferrites
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H01F1/342 5 {Oxides (H01F1/36 and H01F1/38 take precedence)}
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H01F1/344 6 {Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4}
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H01F1/346 7 {[(TO4) 3] with T= Si, Al, Fe, Ga (H01F10/24 takes precedence; Faraday rotators G02F1/09)}
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H01F1/348 7 {Hexaferrites with decreased hardness or anisotropy, i.e. with increased permeability in the microwave (GHz) range, e.g. having a hexagonal crystallographic structure}
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H01F1/36 5 in the form of particles {(H01F1/346, H01F1/348 and H01F1/38 take precedence)}
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H01F1/375 7 Flexible bodies
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H01F1/38 5 amorphous, e.g. amorphous oxides
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H01F1/40 2 of magnetic semiconductor materials, e.g. CdCr2S4 (devices using galvano-magnetic or similar effects H10N50/00)
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H01F1/401 3 {diluted}
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H01F1/402 4 {of II-VI type, e.g. Zn1-x Crx Se}
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H01F1/404 4 {of III-V type, e.g. In1-x Mnx As}
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H01F1/405 4 {of IV type, e.g. Ge1-xMnx}
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H01F1/407 4 {Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3}
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H01F1/408 3 {half-metallic, i.e. having only one electronic spin direction at the Fermi level, e.g. CrO2, Heusler alloys (H01F10/1936 takes precedence)}
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H01F1/42 1 of organic or organo-metallic materials {, e.g. graphene}(H01F1/44 takes precedence)
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H01F1/44 1 of magnetic liquids, e.g. ferrofluids (particles in a bonding agent H01F1/28, H01F1/36, {H01F1/37})
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H01F1/442 2 {the magnetic component being a metal or alloy, e.g. Fe (H01F1/447 takes precedence)}
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H01F1/445 2 {the magnetic component being a compound, e.g. Fe3O4 (H01F1/447 takes precedence)}
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H01F1/447 2 {characterised by magnetoviscosity, e.g. magnetorheological, magnetothixotropic, magnetodilatant liquids (electrorheological fluids C10M171/001)}
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H01F3/00 0 Cores, Yokes, or armatures (magnetic materials H01F1/00; permanent magnets H01F7/02)
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H01F2003/005 1 {Magnetic cores for receiving several windings with perpendicular axes, e.g. for antennae or inductive power transfer}
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H01F3/02 1 made from sheets
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H01F3/04 1 made from strips or ribbons
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H01F3/06 1 made from wires
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H01F3/08 1 made from powder (powder coatings on sheets H01F3/02; on strips or ribbons H01F3/04; on wires H01F3/06)
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H01F3/10 1 Composite arrangements of magnetic circuits
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H01F2003/103 2 {Magnetic circuits with permanent magnets}
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H01F2003/106 2 {Magnetic circuits using combinations of different magnetic materials}
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H01F3/12 2 Magnetic shunt paths
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H01F3/14 2 Constrictions; Gaps, e.g. air-gaps (in magnetic shunt paths H01F3/12)
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H01F5/00 0 Coils (superconducting coils H01F6/06; fixed inductances of the signal type H01F17/00)
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H01F5/003 1 {Printed circuit coils}
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H01F2005/006 1 {with conical spiral form}
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H01F5/02 1 wound on non-magnetic supports, e.g. formers
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H01F2005/022 2 {wound on formers with several winding chambers separated by flanges, e.g. for high voltage applications}
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H01F2005/025 2 {wound on coaxial arrangement of two or more formers}
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H01F2005/027 2 {wound on formers for receiving several coils with perpendicular winding axes, e.g. for antennae or inductive power transfer}
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H01F5/04 1 Arrangements of electric connections to coils, e.g. leads
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H01F2005/043 2 {having multiple pin terminals, e.g. arranged in two parallel lines at both sides of the coil}
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H01F2005/046 2 {Details of formers and pin terminals related to mounting on printed circuits}
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H01F5/06 1 Insulation of windings
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H01F6/00 0 Superconducting magnets; Superconducting coils {(magnetic resonance assemblies using superconducting coil systems G01R33/3815)}
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H01F2006/001 1 {Constructive details of inductive current limiters}
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H01F6/003 1 {Methods and means for discharging superconductive storage (superconducting alloys C22C; static memories with superconducting elements G11C11/44; superconducting circuit breakers with contacts H01H33/004; superconducting switches for low power H03K17/92; superconducting material H10N60/00; power cryotons H10N60/355)}
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H01F6/005 1 {Methods and means for increasing the stored energy in superconductive coils by increments (flux pumps)}
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H01F6/006 1 {Supplying energising or de-energising current; Flux pumps}
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H01F6/008 2 {Electric circuit arrangements for energising superconductive electromagnets}
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H01F6/02 1 Quenching; Protection arrangements during quenching {(protection circuits H02H7/001)}
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H01F6/04 1 Cooling
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H01F6/06 1 Coils, e.g. winding, insulating, terminating or casing arrangements therefor
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H01F6/065 2 {Feed-through bushings, terminals and joints (leading of conductors or axles through casings of transformers H01F27/04)}
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H01F7/00 0 Magnets (superconducting magnets H01F6/00; for separation of solid materials or fluids B03C1/00; for bench or like work-holders B23B31/28, B23Q3/00; work-holding devices B25B11/00; lifting magnets B66C1/00; {operating or controlling locks using permanent magnets E05B47/0038; devices for holding a wing, e.g. door or window, by magnetic or electromagnetic attraction E05C19/16; relieving load or bearings using magnetic means F16C39/06} ; for electric meters G01R; for relays H01H; {for electric discharge tubes H01J, e.g. H01J3/24, H01J23/10, H01J29/68} ; for dynamo-electric machines H02K)
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H01F7/02 1 Permanent magnets {[PM]}
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H01F7/0205 2 {Magnetic circuits with PM in general}
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H01F7/021 3 {Construction of PM (H01F7/0278 takes precedence; PM compositions H01F1/032)}
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H01F7/0215 4 {Flexible forms, sheets}
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H01F7/0221 3 {Mounting means for PM, supporting, coating, encapsulating PM}
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H01F7/0226 3 {PM with variable field strength (H01F7/0284 takes precedence)}
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H01F7/0231 2 {Magnetic circuits with PM for power or force generation}
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H01F7/0236 3 {Magnetic suspension or levitation (for vehicles B60L13/04; magnetic bearings F16C39/063)}
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H01F7/0242 3 {Magnetic drives, magnetic coupling devices}
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H01F7/0247 3 {Orientating, locating, transporting arrangements}
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H01F7/0252 3 {PM holding devices (H01F7/021, H01F7/0215, H01F7/0226 take precedence)}
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H01F7/0257 4 {Lifting, pick-up magnetic objects}
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H01F7/0263 4 {Closures, bags, bands, engagement devices with male and female parts}
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H01F7/0268 4 {Magnetic cylinders}
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H01F7/0273 2 {Magnetic circuits with PM for magnetic field generation}
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H01F7/0278 3 {for generating uniform fields, focusing, deflecting electrically charged particles (for magnetic separation by Lorentz force B03C1/023; specially adapted for NMR applications G01R33/383)}
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H01F7/0284 4 {using a trimmable or adjustable magnetic circuit, e.g. for a symmetric dipole or quadrupole magnetic field}
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H01F7/0289 3 {Transducers, loudspeakers, moving coil arrangements}
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H01F7/0294 3 {Detection, inspection, magnetic treatment}
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H01F7/04 2 Means for releasing the attractive force
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H01F7/06 1 Electromagnets; Actuators including electromagnets {(electric coils H01F5/00; devices for holding workpieces using electric force B23Q3/15; load-engaging elements for lifting articles electromagnetically B66C1/06; electromagnetic couplings F16D27/00; magnetic brakes F16D63/002; electromagnetically operated valves F16K11/24, F16K31/00; analysing materials by magnetic means G01N27/72, G01N27/80; electromagnets for winding mechanical clocks G04C1/02; electromagnetic relays H01H51/00; windings for salient poles of dynamo-electric machines H02K3/18; electromagnets for telegraphic communication H04L; for arc lamps H05B31/28)}
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H01F2007/062 2 {Details of terminals or connectors for electromagnets}
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H01F7/064 2 {Circuit arrangements for actuating electromagnets (circuit arrangements for obtaining special operating characteristics H01F7/18; driving circuits for electromagnets making use of a switching regulator H01H47/325)}
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H01F7/066 2 {Electromagnets with movable winding}
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H01F2007/068 2 {using printed circuit coils}
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H01F7/08 2 with armatures
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H01F7/081 3 {Magnetic constructions}
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H01F2007/083 4 {External yoke surrounding the coil bobbin, e.g. made of bent magnetic sheet}
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H01F2007/085 4 {Yoke or polar piece between coil bobbin and armature having a gap, e.g. filled with nonmagnetic material}
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H01F2007/086 4 {Structural details of the armature}
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H01F7/088 3 {provided with means for absorbing shocks}
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H01F7/10 3 specially adapted for alternating current
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H01F7/11 4 reducing or eliminating the effects of eddy currents
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H01F7/12 4 having anti-chattering arrangements
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H01F7/1205 5 {having short-circuited conductors (electromagnetic relays provided with short-circuited conducting sleeves H01H47/00)}
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H01F7/121 3 Guiding or setting position of armatures, e.g. retaining armatures in their end position
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H01F7/122 4 by permanent magnets {(H01F7/1615, H01F7/1646 take precedence)}
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H01F7/123 4 by ancillary coil
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H01F7/124 4 by mechanical latch, e.g. detent
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H01F7/126 3 Supporting or mounting
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H01F7/127 3 Assembling
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H01F7/128 3 Encapsulating, encasing or sealing
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H01F7/129 4 of armatures
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H01F7/13 3 characterised by pulling-force characteristics
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H01F7/14 3 Pivoting armatures (H01F7/17 takes precedence)
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H01F7/145 4 {Rotary electromagnets with variable gap (with fixed gap or torque motors H02K26/00)}
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H01F7/16 3 Rectilinearly-movable armatures (H01F7/17 takes precedence)
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H01F7/1607 4 {Armatures entering the winding}
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H01F7/1615 5 {Armatures or stationary parts of magnetic circuit having permanent magnet}
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H01F7/1623 5 {Armatures having T-form}
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H01F2007/163 5 {with axial bearing}
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H01F7/1638 4 {Armatures not entering the winding}
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H01F7/1646 5 {Armatures or stationary parts of magnetic circuit having permanent magnet}
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H01F7/1653 4 {Magnetic circuit having axially spaced pole-pieces}
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H01F2007/1661 4 {Electromagnets or actuators with anti-stick disc}
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H01F2007/1669 4 {Armatures actuated by current pulse, e.g. bistable actuators}
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H01F2007/1676 4 {Means for avoiding or reducing eddy currents in the magnetic circuit, e.g. radial slots}
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H01F2007/1684 4 {Armature position measurement using coils}
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H01F2007/1692 4 {Electromagnets or actuators with two coils}
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H01F7/17 3 Pivoting and rectilinearly-movable armatures
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H01F7/18 3 Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
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H01F7/1805 4 {Circuit arrangements for holding the operation of electromagnets or for holding the armature in attracted position with reduced energising current (for holding relay armature in attracted position with reduced energising current H01H47/04; quick energising of electro-dynamic machines H02P9/08; for quickly de-energising of dynamo-electric generators H02P9/123)}
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H01F7/1811 5 {demagnetising upon switching off, removing residual magnetism}
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H01F7/1816 5 {making use of an energy accumulator (for relays H01H47/043)}
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H01F2007/1822 6 {using a capacitor to produce a boost voltage}
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H01F7/1827 5 {by changing number of serially-connected turns or windings (for relays H01H47/06)}
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H01F7/1833 5 {by changing number of parallel-connected turns or windings (for relays H01H47/08)}
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H01F7/1838 5 {by switching-in or -out impedance (for relays H01H47/10)}
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H01F7/1844 4 {Monitoring or fail-safe circuits (for relays H01H47/002)}
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H01F2007/185 5 {with armature position measurement}
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H01F2007/1855 5 {using a stored table to deduce one variable from another}
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H01F2007/1861 5 {using derivative of measured variable}
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H01F2007/1866 5 {with regulation loop}
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H01F7/1872 4 {Bistable or bidirectional current devices (relays H01H47/226)}
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H01F7/1877 4 {controlling a plurality of loads}
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H01F7/1883 4 {by steepening leading and trailing edges of magnetisation pulse, e.g. printer drivers}
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H01F2007/1888 4 {using pulse width modulation}
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H01F2007/1894 4 {minimizing impact energy on closure of magnetic circuit}
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H01F7/20 2 without armatures (cores H01F3/00; coils H01F5/00 {; shaping metal by applying magnetic forces B21D26/14; electromagnets specially adapted for NMR applications G01R33/381})
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H01F7/202 3 {Electromagnets for high magnetic field strength (for superconducting electromagnets H01F6/00; for transformers or inductances without a magnetic core H01F30/08)}
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H01F7/204 4 {Circuits for energising or de-energising}
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H01F7/206 3 {Electromagnets for lifting, handling or transporting of magnetic pieces or material (electromagnets for guidance of vehicles, workpieces B65G21/2009; for magnetic suspension or levitation H02N15/00)}
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H01F2007/208 4 {combined with permanent magnets}
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H01F10/00 0 Thin magnetic films, e.g. of one-domain structure (magnetic record carriers G11B5/00; thin-film magnetic stores G11C)
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H01F10/002 1 {Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature (H01F10/3218 and H01F10/3268 take precedence)}
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H01F10/005 1 {organic or organo-metallic films, e.g. monomolecular films obtained by Langmuir-Blodgett technique, graphene}
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H01F10/007 1 {ultrathin or granular films (H01F10/005 and H01F10/3227 take precedence; applying ultrathin or granular layers to substrates H01F41/301)}
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H01F10/06 1 characterised by the coupling or physical contact with connecting or interacting conductors
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H01F10/08 1 characterised by magnetic layers ({H01F10/32 takes precedence } ; applying thin magnetic films to substrates H01F41/14)
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H01F10/10 2 characterised by the composition
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H01F10/12 3 being metals or alloys (intermetallic compounds H01F10/18)
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H01F10/123 4 {having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films}
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H01F10/126 4 {containing rare earth metals (H01F10/133 takes precedence)}
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H01F10/13 4 Amorphous metallic alloys, e.g. glassy metals {(H01F10/3204 takes precedence)}
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H01F10/131 5 {containing iron or nickel}
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H01F10/132 5 {containing cobalt}
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H01F10/133 5 {containing rare earth metals}
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H01F10/135 6 {containing transition metals}
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H01F10/136 7 {containing iron}
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H01F10/137 7 {containing cobalt}
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H01F10/138 5 {containing nanocrystallites, e.g. obtained by annealing}
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H01F10/14 4 containing iron or nickel ({H01F10/126} , H01F10/13, H01F10/16 take precedence)
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H01F10/142 5 {containing Si}
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H01F10/145 6 {containing Al, e.g. SENDUST}
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H01F10/147 5 {with lattice under strain, e.g. expanded by interstitial nitrogen (H01F10/26 - H01F10/30 take precedence)}
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H01F10/16 4 containing cobalt ({H01F10/126} , H01F10/13 take precedence)
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H01F10/18 3 being compounds
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H01F10/187 4 Amorphous compounds {(H01F10/3204 takes precedence)}
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H01F10/193 4 Magnetic semiconductor compounds {(in general H01F1/40; multilayers, e.g. superlattices H01F10/3213)}
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H01F10/1933 5 {Perovskites}
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H01F10/1936 5 {Half-metallic, e.g. epitaxial CrO2 or NiMnSb films}
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H01F10/20 4 Ferrites
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H01F10/205 5 {Hexagonal ferrites}
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H01F10/22 5 Orthoferrites {, e.g. RFeO3 (R= rare earth element) with orthorhombic structure}
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H01F10/24 5 Garnets {(in general H01F1/346; multilayers, e.g. superlattices H01F10/3209; applying magnetic garnet films to substrates by sputtering H01F41/186)}
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H01F10/245 6 {Modifications for enhancing interaction with electromagnetic wave energy}
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H01F10/26 1 characterised by the substrate or intermediate layers {(H01F10/06 and H01F10/32 take precedence)}
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H01F10/265 2 {Magnetic multilayers non exchange-coupled (H01F10/32 takes precedence)}
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H01F10/28 2 characterised by the composition of the substrate
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H01F10/30 2 characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)}
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H01F10/32 1 Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)}
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H01F10/3204 2 {Exchange coupling of amorphous multilayers}
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H01F10/3209 2 {Exchange coupling of garnet multilayers}
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H01F10/3213 2 {Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices (semiconductor materials for use in semiconductor devices H01L29/12)}
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H01F10/3218 2 {Exchange coupling of magnetic films via an antiferromagnetic interface (H01F10/3268 takes precedence)}
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H01F10/3222 2 {Exchange coupled hard/soft multilayers, e.g. CoPt/Co or NiFe/CoSm (nanocomposite spring magnets H01F1/0579)}
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H01F10/3227 2 {Exchange coupling via one or more magnetisable ultrathin or granular films}
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H01F10/3231 3 {via a non-magnetic spacer}
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H01F10/3236 4 {made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy (H01F10/3286 takes precedence)}
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H01F10/324 2 {Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer}
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H01F10/3245 3 {the spacer being superconductive}
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H01F10/325 3 {the spacer being noble metal}
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H01F10/3254 3 {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
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H01F10/3259 4 {Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer}
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H01F10/3263 3 {the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO}
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H01F10/3268 3 {the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn}
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H01F10/3272 4 {by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets}
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H01F10/3277 5 {by use of artificial ferrimagnets [AFI] only}
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H01F10/3281 4 {only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co}
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H01F10/3286 3 {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}
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H01F10/329 3 {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
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H01F10/3295 3 {Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers}
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H01F13/00 0 Apparatus or processes for magnetising or demagnetising ({devices for holding workpieces using magnetic or electric force acting directly on the workpieces B23Q3/15} ; for degaussing ships B63G9/06; for clocks or watches G04D9/00; {recording or erasing of information on magnetic record carriers G11B5/00} ; demagnetising arrangements for colour television H04N9/29)
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H01F13/003 1 {Methods and devices for magnetising permanent magnets (permanent magnets H01F7/02)}
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H01F13/006 1 {Methods and devices for demagnetising of magnetic bodies, e.g. workpieces, sheet material (for erasing of information on magnetic record carriers G11B5/00)}
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H01F17/00 0 Fixed inductances of the signal type (coils in general H01F5/00 {inductors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof and multistep manufacturing processes therefor H01L28/10})
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H01F17/0006 1 {Printed inductances (printed coils for dynamo-electric machines H02K3/26; printed circuits H05K)}
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H01F17/0013 2 {with stacked layers}
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H01F2017/002 3 {Details of via holes for interconnecting the layers}
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H01F2017/0026 3 {Multilayer LC-filter}
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H01F2017/0046 2 {with a conductive path having a bridge}
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H01F2017/0053 2 {with means to reduce eddy currents}
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H01F2017/006 2 {flexible printed inductors}
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H01F2017/008 2 {Electric or magnetic shielding of printed inductances}
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H01F2017/0086 2 {on semiconductor substrate (inductors for integrated circuits H01L28/10)}
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H01F2017/0093 1 {Common mode choke coil}
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H01F17/043 2 {with two, usually identical or nearly identical parts enclosing completely the coil (pot cores)}
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H01F17/045 2 {with core of cylindric geometry and coil wound along its longitudinal axis, i.e. rod or drum core}
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H01F2017/046 3 {helical coil made of flat wire, e.g. with smaller extension of wire cross section in the direction of the longitudinal axis}
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H01F2017/048 2 {with encapsulating core, e.g. made of resin and magnetic powder}
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H01F17/062 3 {Toroidal core with turns of coil around it}
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H01F2017/065 3 {Core mounted around conductor to absorb noise, e.g. EMI filter}
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H01F2017/067 3 {Core with two or more holes to lead through conductor}
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H01F17/08 3 Loading coils for telecommunication circuits
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H01F19/02 1 Audio-frequency transformers or mutual inductances, i.e. not suitable for handling frequencies considerably beyond the audio range
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H01F19/04 1 Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range (resonant circuits H03H)
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H01F19/06 2 Broad-band transformers, e.g. suitable for handling frequencies well down into the audio range
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H01F19/08 2 Transformers having magnetic bias, e.g. for handling pulses
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H01F2019/085 3 {Transformer for galvanic isolation}
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H01F21/00 0 Variable inductances or transformers of the signal type (H01F36/00 takes precedence)
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H01F21/005 1 {Inductances without magnetic core}
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H01F21/02 1 continuously variable, e.g. variometers
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H01F21/04 2 by relative movement of turns or parts of windings
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H01F21/06 2 by movement of core or part of core relative to the windings as a whole
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H01F21/065 3 {Measures for obtaining a desired relation between the position of the core and the inductance}
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H01F21/08 2 by varying the permeability of the core, e.g. by varying magnetic bias
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H01F21/10 2 by means of a movable shield
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H01F2021/125 2 {Printed variable inductor with taps, e.g. for VCO}
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H01F27/00 0 Details of transformers or inductances, in general
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H01F27/002 1 {Arrangements provided on the transformer facilitating its transport}
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H01F27/004 1 {Arrangements for interchanging inductances, transformers or coils thereof}
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H01F27/006 1 {with special arrangement or spacing of turns of the winding(s), e.g. to produce desired self-resonance}
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H01F27/008 1 {with temperature compensation}
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H01F27/02 1 Casings
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H01F27/022 2 {Encapsulation}
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H01F27/025 2 {Constructional details relating to cooling}
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H01F27/027 2 {specially adapted for combination of signal type inductors or transformers with electronic circuits, e.g. mounting on printed circuit boards}
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H01F27/04 2 Leading of conductors or axles through casings, e.g. for tap-changing arrangements
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H01F27/06 1 Mounting, supporting or suspending transformers, reactors or choke coils {not being of the signal type}
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H01F2027/065 2 {Mounting on printed circuit boards}
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H01F27/08 1 Cooling (heat-transfer elements F28F); Ventilating (structural details of casings H01F27/02)
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H01F27/085 2 {Cooling by ambient air}
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H01F27/10 2 Liquid cooling
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H01F27/105 3 {Cooling by special liquid or by liquid of particular composition}
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H01F27/12 3 Oil cooling
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H01F27/125 4 {Cooling by synthetic insulating and incombustible liquid}
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H01F27/14 4 Expansion chambers; Oil conservators; Gas cushions; Arrangements for purifying, drying, or filling
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H01F27/16 3 Water cooling
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H01F27/18 3 by evaporating liquids
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H01F27/20 2 Cooling by special gases or non-ambient air
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H01F27/22 2 Cooling by heat conduction through solid or powdered fillings
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H01F27/23 1 Corrosion protection
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H01F27/24 1 Magnetic cores
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H01F27/245 2 made from sheets, e.g. grain-oriented (H01F27/26 takes precedence)
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H01F27/2455 3 {using bent laminations}
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H01F27/25 2 made from strips or ribbons (H01F27/26 takes precedence)
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H01F27/255 2 made from particles (H01F27/26 takes precedence)
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H01F27/26 2 Fastening parts of the core together; Fastening or mounting the core on casing or support (on coil H01F27/30)
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H01F27/263 3 {Fastening parts of the core together}
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H01F27/266 3 {Fastening or mounting the core on casing or support (on coil H01F27/30)}
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H01F27/28 1 Coils; Windings; Conductive connections
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H01F27/2804 2 {Printed windings}
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H01F2027/2809 3 {on stacked layers}
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H01F2027/2814 3 {with only part of the coil or of the winding in the printed circuit board, e.g. the remaining coil or winding sections can be made of wires or sheets}
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H01F2027/2819 3 {Planar transformers with printed windings, e.g. surrounded by two cores and to be mounted on printed circuit}
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H01F27/2823 2 {Wires (H01F27/2866 takes precedence)}
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H01F27/2828 3 {Construction of conductive connections, of leads}
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H01F2027/2833 3 {using coaxial cable as wire}
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H01F2027/2838 3 {using transposed wires}
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H01F2027/2842 3 {Wire coils wound in conical zigzag to reduce voltage between winding turns}
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H01F27/2847 2 {Sheets; Strips (H01F27/2866 takes precedence)}
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H01F27/2852 3 {Construction of conductive connections, of leads}
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H01F2027/2857 3 {Coil formed from wound foil conductor}
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H01F2027/2861 3 {Coil formed by folding a blank}
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H01F27/2866 2 {Combination of wires and sheets}
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H01F27/2871 2 {Pancake coils}
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H01F27/2876 2 {Cooling (cooling transformers and inductances in general H01F27/08)}
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H01F27/288 2 {Shielding}
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H01F27/2885 3 {with shields or electrodes (shields or electrodes for pancake coils H01F27/2871; construction of electric or magnetic shields or screens H01F27/36)}
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H01F27/289 3 {with auxiliary windings (for pancake coils H01F27/2871)}
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H01F27/2895 2 {Windings disposed upon ring cores}
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H01F27/29 2 Terminals; Tapping arrangements {for signal inductances}
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H01F27/292 3 {Surface mounted devices}
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H01F2027/295 4 {with flexible terminals}
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H01F2027/297 3 {with pin-like terminal to be inserted in hole of printed path}
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H01F27/30 2 Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
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H01F27/303 3 {Clamping coils, windings or parts thereof together}
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H01F27/306 3 {Fastening or mounting coils or windings on core, casing or other support}
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H01F27/32 2 Insulating of coils, windings, or parts thereof
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H01F27/321 3 {using a fluid for insulating purposes only}
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H01F27/322 3 {the insulation forming channels for circulation of the fluid}
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H01F27/323 3 {Insulation between winding turns, between winding layers}
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H01F27/324 3 {Insulation between coil and core, between different winding sections, around the coil; Other insulation structures}
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H01F27/325 4 {Coil bobbins (formers for coils in general H01F5/02)}
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H01F27/326 4 {specifically adapted for discharge lamp ballasts}
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H01F27/327 3 {Encapsulating or impregnating (encapsulating coil and core H01F27/022)}
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H01F2027/328 4 {Dry-type transformer with encapsulated foil winding, e.g. windings coaxially arranged on core legs with spacers for cooling and with three phases}
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H01F2027/329 3 {Insulation with semiconducting layer, e.g. to reduce corona effect}
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H01F27/33 1 Arrangements for noise damping
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H01F27/34 1 Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
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H01F27/341 2 {Preventing or reducing no-load losses or reactive currents}
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H01F27/343 2 {Preventing or reducing surge voltages; oscillations}
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H01F27/345 3 {using auxiliary conductors}
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H01F27/346 2 {Preventing or reducing leakage fields (using magnetic shields H01F27/36; using auxiliary windings H01F27/38)}
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H01F2027/348 2 {Preventing eddy currents}
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H01F27/36 2 Electric or magnetic shields or screens (movable for varying inductance H01F21/10)
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H01F27/361 3 {made of combinations of electrically conductive material and ferromagnetic material}
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H01F27/366 3 {made of ferromagnetic material}
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H01F27/38 2 Auxiliary core members; Auxiliary coils or windings
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H01F27/385 3 {for reducing harmonics}
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H01F27/40 1 Structural association with built-in electric component, e.g. fuse
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H01F27/402 2 {Association of measuring or protective means}
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H01F2027/404 3 {Protective devices specially adapted for fluid filled transformers}
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H01F2027/406 3 {Temperature sensor or protection}
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H01F2027/408 2 {Association with diode or rectifier}
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H01F27/42 1 Circuits specially adapted for the purpose of modifying, or compensating for, electric characteristics of transformers, reactors, or choke coils (circuits for controlling transformers, reactors or choke coils, for the purpose of obtaining a desired output H02P13/00; impedance networks H03H)
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H01F27/422 2 {for instrument transformers}
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H01F27/425 3 {for voltage transformers}
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H01F27/427 3 {for current transformers}
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H01F29/00 0 Variable transformers or inductances not covered by group H01F21/00 {(tap change devices H01H9/0005)}
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H01F29/02 1 with tappings on coil or winding; with provision for rearrangement or interconnection of windings
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H01F29/025 2 {Constructional details of transformers or reactors with tapping on coil or windings}
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H01F29/04 2 having provision for tap-changing without interrupting the load current
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H01F29/06 1 with current collector gliding or rolling on or along winding
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H01F29/08 1 with core, coil, winding, or shield movable to offset variation of voltage or phase shift, e.g. induction regulators
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H01F29/10 2 having movable part of magnetic circuit {(high leakage transformers H01F38/08; dynamo-electric machines with movable part of magnetic circuit H02K23/44, H02K23/48)}
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H01F29/12 2 having movable coil, winding, or part thereof; having movable shield
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H01F29/14 1 with variable magnetic bias ({amplitude modulation by means of variable impedance element H03C1/08} ; magnetic amplifiers H03F; {circuits for automatic telephonic communication H04M3/00})
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H01F2029/143 2 {with control winding for generating magnetic bias}
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H01F29/146 2 {Constructional details}
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H01F30/00 0 Fixed transformers not covered by group H01F19/00
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H01F30/02 1 Auto-transformers
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H01F30/04 1 having two or more secondary windings, each supplying a separate load, e.g. for radio set power supplies
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H01F30/06 1 characterised by the structure
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H01F30/08 2 without magnetic core
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H01F30/10 2 Single-phase transformers (H01F30/16 takes precedence)
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H01F30/12 2 Two-phase, three-phase or polyphase transformers
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H01F30/14 3 for changing the number of phases
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H01F30/16 2 Toroidal transformers
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H01F36/00 0 Transformers with superconductive windings or with windings operating at cryogenic temperature (superconducting magnets or superconducting coils H01F6/00)
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H01F37/00 0 Fixed inductances not covered by group H01F17/00
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H01F37/005 1 {without magnetic core}
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H01F38/00 0 Adaptations of transformers or inductances for specific applications or functions
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H01F2038/003 1 {High frequency transformer for microwave oven}
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H01F2038/006 1 {matrix transformer consisting of several interconnected individual transformers working as a whole}
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H01F38/02 1 for non-linear operation
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H01F38/023 2 {of inductances}
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H01F2038/026 3 {non-linear inductive arrangements for converters, e.g. with additional windings}
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H01F38/04 2 for frequency changing
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H01F38/06 2 for changing the wave shape
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H01F38/08 1 High-leakage transformers or inductances
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H01F38/085 2 {Welding transformers}
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H01F38/10 2 Ballasts, e.g. for discharge lamps
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H01F38/12 1 Ignition, e.g. for IC engines
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H01F2038/122 2 {with rod-shaped core}
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H01F2038/125 2 {with oil insulation}
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H01F2038/127 2 {with magnetic circuit including permanent magnet}
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H01F38/14 1 Inductive couplings {(for wireless supply or distribution of electric power using inductive coupling H02J50/10)}
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H01F2038/143 2 {for signals}
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H01F2038/146 2 {in combination with capacitive coupling}
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H01F38/16 1 Cascade transformers, e.g. for use with extra high tension
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H01F38/18 1 Rotary transformers
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H01F38/20 1 Instruments transformers
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H01F38/22 2 for single phase ac
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H01F38/24 3 Voltage transformers
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H01F38/26 4 Constructions
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H01F38/28 3 Current transformers
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H01F38/30 4 Constructions
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H01F2038/305 5 {with toroidal magnetic core}
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H01F38/32 4 Circuit arrangements
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H01F38/34 3 Combined voltage and current transformers
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H01F38/36 4 Constructions
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H01F38/38 2 for polyphase ac
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H01F38/40 2 for dc
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H01F38/42 1 Flyback transformers
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H01F2038/423 2 {with adjusting potentiometers}
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H01F2038/426 2 {with gap in transformer core}
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H01F41/00 0 Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
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H01F41/005 1 {Impregnating or encapsulating (insulating of windings H01F41/12)}
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H01F41/02 1 for manufacturing cores, coils, or magnets (H01F41/14 takes precedence; for dynamo-electric machines H02K15/00)
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H01F41/0206 2 {Manufacturing of magnetic cores by mechanical means (magnetic cores per se H01F27/24)}
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H01F41/0213 3 {Manufacturing of magnetic circuits made from strip(s) or ribbon(s) (magnetic cores made by winding a ribbon H01F27/25)}
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H01F41/022 4 {by winding the strips or ribbons around a coil}
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H01F41/0226 4 {from amorphous ribbons}
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H01F41/0233 3 {Manufacturing of magnetic circuits made from sheets (magnetic cores made from sheets H01F27/245; soft magnetic alloys in the form of sheets H01F1/16)}
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H01F41/024 4 {Manufacturing of magnetic circuits made from deformed sheets (magnetic cores made from deformed sheets H01F27/2455)}
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H01F41/0273 3 {Imparting anisotropy (methods and devices for magnetising permanent magnets H01F13/003)}
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H01F41/028 4 {Radial anisotropy (for rotor or stator bodies H02K15/02)}
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H01F41/0293 3 {diffusion of rare earth elements, e.g. Tb, Dy or Ho, into permanent magnets}
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H01F41/04 2 for manufacturing coils {(coils for transformer or inductances H01F27/28)}
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H01F41/069 5 Winding two or more wires, e.g. bifilar winding
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H01F41/12 3 Insulating of windings ({impregnating or encapsulating of transformers H01F41/005} ; of conductors in general H01B13/06)
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H01F41/32 1 for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film}
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H01F41/325 2 {applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition}
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H01F41/34 2 in patterns, e.g. by lithography
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H01G CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors with potential-jump or surface barrier H01L29/00)
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H01G2/00 0 Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
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H01G2/02 1 Mountings
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H01G2/04 2 specially adapted for mounting on a chassis
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H01G2/06 2 specially adapted for mounting on a printed-circuit support
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H01G2/065 3 {for surface mounting, e.g. chip capacitors}
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H01G2/103 2 {Sealings, e.g. for lead-in wires; Covers}
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H01G2/12 1 Protection against corrosion (H01G2/10 takes precedence)
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H01G2/14 1 Protection against electric or thermal overload (by cooling H01G2/08)
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H01G4/00 0 Fixed capacitors; Processes of their manufacture (electrolytic capacitors H01G9/00)
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H01G4/005 2 Electrodes
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H01G4/018 2 Dielectrics
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H01G4/06 3 Solid dielectrics
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H01G4/08 4 Inorganic dielectrics
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H01G4/085 5 {Vapour deposited}
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H01G4/10 5 Metal-oxide dielectrics {(H01G4/085 takes precedence)}
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H01G4/105 6 {Glass dielectric}
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H01G4/12 5 Ceramic dielectrics {(H01G4/085 takes precedence)}
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H01G4/1209 6 {characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence)}
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H01G4/1218 7 {based on titanium oxides or titanates (H01G4/1245 takes precedence)}
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H01G4/1236 7 {based on zirconium oxides or zirconates (H01G4/1263 takes precedence)}
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H01G4/1245 8 {containing also titanates}
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H01G4/1254 7 {based on niobium or tungsteen, tantalum oxides or niobates, tantalates}
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H01G4/1263 8 {containing also zirconium oxides or zirconates}
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H01G4/1272 6 {Semiconductive ceramic capacitors}
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H01G4/129 6 {containing a glassy phase, e.g. glass ceramic}
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H01G4/14 4 Organic dielectrics
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H01G4/16 5 of fibrous material, e.g. paper
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H01G4/20 3 using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence)
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H01G4/221 5 {characterised by the composition of the impregnant}
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H01G4/228 2 Terminals
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H01G4/232 3 electrically connecting two or more layers of a stacked or rolled capacitor
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H01G4/2325 4 {characterised by the material of the terminals}
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H01G4/236 3 leading through the housing, i.e. lead-through
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H01G4/242 3 the capacitive element surrounding the terminal
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H01G4/248 3 the terminals embracing or surrounding the capacitive element, e.g. caps (H01G4/252 takes precedence)
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H01G4/252 3 the terminals being coated on the capacitive element (H01G4/232 takes precedence)
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H01G4/255 2 Means for correcting the capacitance value
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H01G4/258 2 Temperature compensation means
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H01G4/26 1 Folded capacitors
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H01G4/28 1 Tubular capacitors
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H01G4/30 1 Stacked capacitors (H01G4/33 takes precedence)
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H01G4/302 2 {obtained by injection of metal in cavities formed in a ceramic body}
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H01G4/304 2 {obtained from a another capacitor}
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H01G4/306 2 {made by thin film techniques}
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H01G4/308 2 {made by transfer techniques}
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H01G4/32 1 Wound capacitors
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H01G4/33 1 Thin- or thick-film capacitors (thin- or thick-film circuits H01L27/00 {capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40})
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H01G4/35 1 Feed-through capacitors or anti-noise capacitors
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H01G4/385 2 {Single unit multiple capacitors, e.g. dual capacitor in one coil}
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H01G4/40 1 Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
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H01G5/00 0 Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
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H01G5/013 2 Dielectrics
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H01G5/0132 3 {Liquid dielectrics}
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H01G5/015 2 Current collectors
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H01G5/019 2 Means for correcting the capacitance characteristics
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H01G7/00 0 Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
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H01G9/00 0 Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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H01G9/0003 1 {Protection against electric or thermal overload; cooling arrangements; means for avoiding the formation of cathode films (H01G9/12 takes precedence)}
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H01G9/055 4 Etched foil electrodes
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H01G9/10 3 Sealing, e.g. of lead-in wires
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H01G9/14 2 Structural combinations {or circuits} for modifying, or compensating for, electric characteristics of electrolytic capacitors
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H01G9/145 1 Liquid electrolytic capacitors (H01G11/00 takes precedence)
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H01G9/155 1 {Double-layer capacitors}
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H01G9/16 1 specially for use as rectifiers or detectors (H01G9/22 takes precedence)
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H01G9/18 1 Self-interrupters
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H01G9/20 1 Light-sensitive devices
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H01G9/2004 2 {characterised by the electrolyte, e.g. comprising an organic electrolyte}
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H01G9/2009 3 {Solid electrolytes}
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H01G9/2013 3 {the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide}
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H01G9/2018 3 {characterised by the ionic charge transport species, e.g. redox shuttles}
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H01G9/2031 3 {comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence)}
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H01G9/2036 3 {comprising mixed oxides, e.g. ZnO covered TiO2 particles}
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H01G9/204 3 {comprising zinc oxides, e.g. ZnO (H01G9/2036 takes precedence)}
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H01G9/2045 2 {comprising a semiconductor electrode comprising elements of the fourth group of the Periodic System (C, Si, Ge, Sn, Pb) with or without impurities, e.g. doping materials}
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H01G9/205 2 {comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials}
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H01G9/2054 2 {comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials (H01G9/2027 takes precedence)}
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H01G9/2059 2 {comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution}
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H01G9/2063 3 {comprising a mixture of two or more dyes}
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H01G9/2068 2 {Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells}
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H01G9/2072 3 {comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells}
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H01G9/2077 3 {Sealing arrangements, e.g. to prevent the leakage of the electrolyte}
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H01G9/2081 3 {Serial interconnection of cells}
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H01G9/2086 3 {Photoelectrochemical cells in the form of a fiber}
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H01G9/209 2 {Light trapping arrangements}
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H01G9/2095 2 {comprising a flexible sustrate}
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H01G9/21 1 Temperature-sensitive devices
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H01G9/22 1 Devices using combined reduction and oxidation, e.g. redox arrangement or solion
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H01G9/26 1 Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other
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H01G9/28 1 Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices with other electric components not covered by this subclass
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H01G11/00 0 Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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H01G11/02 1 using combined reduction-oxidation reactions, e.g. redox arrangement or solion
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H01G11/04 1 Hybrid capacitors
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H01G11/06 2 with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
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H01G11/08 1 Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
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H01G11/10 1 Multiple hybrid or EDL capacitors, e.g. arrays or modules (housings, cases, encapsulations or mountings thereof H01G11/78)
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H01G11/12 2 Stacked hybrid or EDL capacitors
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H01G11/14 1 Arrangements or processes for adjusting or protecting hybrid or EDL capacitors (emergency protective circuit arrangements specially adapted for capacitors, and effecting automatic switching in the event of an undesired change from normal working conditions H02H7/16; emergency protective circuit arrangements for limiting excess current or voltages without disconnection H02H9/00)
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H01G11/16 2 against electric overloads, e.g. including fuses
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H01G11/18 2 against thermal overloads, e.g. heating, cooling or ventilating
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H01G11/20 2 Reformation or processes for removal of impurities, e.g. scavenging
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H01G11/22 1 Electrodes
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H01G11/24 2 characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
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H01G11/26 2 characterised by their structure, e.g. multi-layered, porosity or surface features
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H01G11/28 3 arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
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H01G11/48 3 Conductive polymers
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H01G11/50 3 specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
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H01G11/52 1 Separators
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H01G11/56 2 Solid electrolytes, e.g. gels; Additives therein
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H01G11/58 2 Liquid electrolytes
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H01G11/60 3 characterised by the solvent
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H01G11/62 3 characterised by the solute, e.g. salts, anions or cations therein
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H01G11/66 1 Current collectors
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H01G11/70 2 characterised by their structure
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H01G11/72 2 specially adapted for integration in multiple or stacked hybrid or EDL capacitors
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H01G11/74 1 Terminals, e.g. extensions of current collectors
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H01G11/76 2 specially adapted for integration in multiple or stacked hybrid or EDL capacitors
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H01G11/78 1 Cases; Housings; Encapsulations; Mountings
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H01G11/80 2 Gaskets; Sealings
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H01G11/82 2 Fixing or assembling a capacitive element in a housing, e.g. mounting electrodes, current collectors or terminals in containers or encapsulations
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H01G11/84 1 Processes for the manufacture of hybrid or EDL capacitors, or components thereof
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H01G11/86 2 specially adapted for electrodes (carbonisation or activation of carbon for the manufacture of electrodes H01G11/34)
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H01G13/00 0 Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
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H01G13/003 1 {Apparatus or processes for encapsulating capacitors}
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H01G13/006 1 {Apparatus or processes for applying terminals}
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H01G13/02 1 Machines for winding capacitors
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H01G13/04 1 Drying; Impregnating
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H01G13/06 1 with provision for removing metal surfaces
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H01G15/00 0 Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with each other (involving at least one hybrid or electric double-layer [EDL] capacitor as the main component H01G11/08)
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H01G17/00 0 Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with other electric elements, not covered by this subclass, e.g. RC combinations
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H01H ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B7/10; electrolytic self-interrupters H01G9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K17/00)
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H01H1/00 0 Contacts (liquid contacts H01H29/04)
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H01H2001/0005 1 {Redundant contact pairs in one switch for safety reasons}
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H01H2001/001 1 {providing easy replacement of contacts}
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H01H1/0015 1 {Means for testing or for inspecting contacts, e.g. wear indicator (measuring circuits G01R31/3274)}
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H01H2001/0021 2 {Camera or endoscope for monitoring contacts, their position or mechanism}
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H01H2001/0026 2 {wherein one or both contacts contain embedded contact wear signal material, e.g. radioactive material being released as soon as the contact wear reaches the embedded layer}
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H01H2001/0031 2 {by analysing radiation emitted by arc or trace material}
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H01H1/0036 1 {Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009)}
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H01H2001/0042 2 {Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet}
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H01H2001/0047 3 {operable only by mechanical latching}
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H01H2001/0052 2 {Special contact materials used for MEMS}
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H01H2001/0057 3 {the contact materials containing refractory materials, e.g. tungsten}
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H01H2001/0063 2 {having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force}
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H01H2001/0068 2 {with multi dimensional movement, i.e. the movable actuator performing movements in at least two different directions}
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H01H2001/0073 2 {Solutions for avoiding the use of expensive silicon technologies in micromechanical switches}
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H01H2001/0078 2 {with parallel movement of the movable contact relative to the substrate}
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H01H2001/0084 2 {with perpendicular movement of the movable contact relative to the substrate}
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H01H2001/0089 2 {Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate}
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H01H1/0094 1 {Switches making use of nanoelectromechanical systems [NEMS]}
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H01H1/02 1 characterised by the material thereof {(containing gas-evolving material H01H33/765)}
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H01H1/0201 2 {Materials for reed contacts}
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H01H1/0203 2 {specially adapted for vacuum switches}
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H01H2001/0205 3 {Conditioning of the contact material through arcing during manufacturing, e.g. vacuum-depositing of layer on contact surface}
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H01H1/0206 3 {containing as major components Cu and Cr}
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H01H2001/0208 2 {containing rhenium}
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H01H1/021 2 Composite material
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H01H1/023 3 having a noble metal as the basic material
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H01H1/0231 4 {provided with a solder layer}
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H01H1/0233 4 and containing carbides
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H01H1/0237 4 and containing oxides
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H01H1/02372 5 {containing as major components one or more oxides of the following elements only: Cd, Sn, Zn, In, Bi, Sb or Te}
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H01H1/02374 6 {containing as major component CdO}
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H01H1/02376 6 {containing as major component SnO2}
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H01H2001/02378 5 {containing iron-oxide as major component}
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H01H1/025 3 having copper as the basic material
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H01H1/027 3 containing carbon particles or fibres
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H01H1/029 3 comprising conducting material dispersed in an elastic support or binding material
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H01H1/04 2 Co-operating contacts of different material
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H01H1/06 1 characterised by the shape or structure of the contact-making surface, e.g. grooved
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H01H1/065 2 {formed by freely suspended particles, e.g. magnetic dust or balls}
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H01H1/08 2 wetted with mercury
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H01H1/10 2 Laminated contacts with divided contact surface
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H01H1/12 1 characterised by the manner in which co-operating contacts engage
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H01H2001/125 2 {whereby the contacts of the switch are formed by teeth of a zipper}
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H01H1/14 2 by abutting
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H01H2001/145 3 {by crossing each other, the cooperating contacts each having a contact making ridge perpendicular to each other}
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H01H1/16 3 by rolling; by wrapping; Roller or ball contacts
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H01H1/18 3 with subsequent sliding
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H01H1/20 3 Bridging contacts {(for circuit breakers H01H73/045)}
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H01H1/2008 4 {Facilitate mounting or replacing contact bridge and pressure spring on carrier (H01H11/0012 takes precedence)}
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H01H1/2016 4 {in which the two contact pairs commutate at substantially different moments}
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H01H1/2025 4 {comprising two-parallel bridges}
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H01H2001/2033 5 {with a contact bridge on both opposite sides of a fixed contact pair, each contact bridge being moved to close or open the circuit}
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H01H1/2041 4 {Rotating bridge}
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H01H1/205 5 {Details concerning the elastic mounting of the rotating bridge in the rotor}
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H01H1/2058 5 {Rotating bridge being assembled in a cassette, which can be placed as a complete unit into a circuit breaker}
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H01H1/2066 4 {Fork-shaped bridge; Two transversally connected contact arms bridging two fixed contacts}
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H01H1/2075 4 {T-shaped bridge; bridging contact has lateral arm for mounting resiliently or on a pivot}
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H01H1/2083 4 {Bridging contact surfaces directed at an oblique angle with respect to the movement of the bridge}
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H01H2001/2091 4 {having two pivotally and electrically connected halve bridges}
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H01H1/22 3 with rigid pivoted member carrying the moving contact
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H01H1/221 4 {and a contact pressure spring acting between the pivoted member and a supporting member}
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H01H2001/223 5 {using a torsion spring}
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H01H1/225 5 {the supporting member being pivotable}
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H01H1/226 5 {having a plurality of parallel contact bars}
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H01H2001/228 6 {with insulating spacers between the contact bars}
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H01H1/24 3 with resilient mounting
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H01H1/242 4 {the contact forming a part of a coil spring}
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H01H1/245 4 {Spring wire contacts}
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H01H2001/247 4 {using an elastic hinge, the contact being composed of rigid parts connected by thinned flexible hinge parts}
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H01H1/26 4 with spring blade support
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H01H2001/265 5 {having special features for supporting, locating or pre-stressing the contact blade springs}
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H01H1/28 5 Assembly of three or more contact-supporting spring blades
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H01H1/30 4 within supporting guides
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H01H1/32 3 Self-aligning contacts
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H01H1/34 3 with provision for adjusting position of contact relative to its co-operating contact
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H01H1/36 2 by sliding
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H01H1/365 3 {Bridging contacts}
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H01H1/38 3 Plug-and-socket contacts
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H01H1/385 4 {Contact arrangements for high voltage gas blast circuit breakers}
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H01H1/40 3 Contact mounted so that its contact-making surface is flush with adjoining insulation
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H01H1/403 4 {Contacts forming part of a printed circuit (multilayer keyboard switches H01H13/702; thumbwheel switches H01H19/001; for rotary switches with axial contact pressure H01H19/585)}
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H01H2001/406 4 {with holes or recesses between adjacent contacts, e.g. to collect abrasion powder}
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H01H1/42 3 Knife-and-clip contacts
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H01H2001/425 4 {with separate contact pressure spring confined between two contact knifes and urging the knifes onto a mating contact}
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H01H1/44 3 with resilient mounting
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H01H1/46 3 self-aligning contacts
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H01H1/48 3 with provision for adjusting position of contact relative to its co-operating contact
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H01H1/50 1 Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
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H01H1/502 2 {the action of the contact pressure spring becoming active only after engagement of the contacts}
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H01H1/504 2 {by thermal means}
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H01H2001/506 2 {Fail safe contacts, i.e. the contacts being kept in a safe position, usually in an open circuit position, at end of life time of switch}
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H01H2001/508 2 {with mechanical means to prevent return/reverse movement of movable contact once opening or closing cycle has started}
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H01H1/52 2 Contacts adapted to act as latches
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H01H1/54 2 by magnetic force {(combined with electrodynamic opening H01H77/101)}
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H01H2001/545 3 {having permanent magnets directly associated with the contacts}
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H01H1/56 1 Contact arrangements for providing make-before-break operation, e.g. for on-load tap-changing
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H01H1/58 1 Electric connections to or between contacts; Terminals {(for high tension switches H01H33/025; for electromagnetic relays H01H50/14; for circuit breakers H01H71/08)}
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H01H1/5805 2 {Connections to printed circuits (for slide switches H01H15/005; for tumbler switches H01H23/006)}
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H01H2001/5811 3 {both fixed and movable contacts being formed by blank stamping and mounted or soldered on printed circuit board without any other housing elements}
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H01H2001/5816 3 {Connections to flexible or curved printed circuit boards}
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H01H1/5822 2 {Flexible connections between movable contact and terminal}
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H01H2001/5827 3 {Laminated connections, i.e. the flexible conductor is composed of a plurality of thin flexible conducting layers}
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H01H1/5833 2 {comprising an articulating, sliding or rolling contact between movable contact and terminal}
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H01H2001/5838 3 {using electrodynamic forces for enhancing the contact pressure between the sliding surfaces}
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H01H1/5844 2 {making use of wire-gripping clips or springs}
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H01H1/585 3 {and piercing the wire insulation}
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H01H1/5855 2 {characterised by the use of a wire clamping screw or nut}
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H01H2001/5861 3 {Box connector with a collar or lug for clamping internal rail and external conductor together by a tightening screw}
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H01H1/5866 2 {characterised by the use of a plug and socket connector}
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H01H2001/5872 3 {including means for preventing incorrect coupling}
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H01H2001/5877 2 {with provisions for direct mounting on a battery pole}
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H01H2001/5883 2 {the extension of the contact being crimped around a wire}
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H01H2001/5888 2 {Terminals of surface mounted devices [SMD]}
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H01H2001/5894 2 {the extension of the contact being welded to a wire or a bus}
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H01H1/60 1 Auxiliary means structurally associated with the switch for cleaning or lubricating contact-making surfaces (cleaning by normal sliding of contacts H01H1/18, H01H1/36)
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H01H1/605 2 {Cleaning of contact-making surfaces by relatively high voltage pulses}
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H01H1/62 1 Heating or cooling of contacts
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H01H1/64 1 Protective enclosures, baffle plates, or screens for contacts
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H01H1/645 2 {containing getter material (for explosion inhibiting in explosion-proofcases H01H9/046; for vacuum switches H01H33/6683)}
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H01H1/66 2 Contacts sealed in an evacuated or gas-filled envelope, e.g. magnetic dry-reed contacts
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H01H3/00 0 Mechanisms for operating contacts ({for tap changers H01H9/0027;} thermal actuating or release means H01H37/02)
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H01H3/001 1 {Means for preventing or breaking contact-welding}
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H01H2003/002 2 {with lockout, e.g. two contact pairs in series}
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H01H3/004 1 {for operating contacts periodically}
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H01H3/005 1 {making use of superconductivity, e.g. levitation switch}
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H01H2003/007 1 {the contacts being actuated by deformation of a flexible housing}
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H01H2003/008 1 {with a haptic or a tactile feedback controlled by electrical means, e.g. a motor or magnetofriction}
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H01H3/02 1 Operating parts, i.e. for operating driving mechanism by a mechanical force external to the switch
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H01H3/0206 2 {Combined operation of electric switch and of fluid control device}
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H01H3/0213 2 {Combined operation of electric switch and variable impedance, e.g. resistor, capacitor (H01H9/061 takes precedence)}
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H01H3/022 2 {Emergency operating parts, e.g. for stop-switch in dangerous conditions}
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H01H3/0226 3 {operated by a pull cord}
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H01H2003/0233 3 {for alarm triggering, e.g. fire alarm, emergency off switches operated by breaking a glass}
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H01H2003/024 3 {Resetting of bistable emergency operating part by pulling it}
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H01H2003/0246 3 {Resetting of bistable emergency operating part by rotating itself or an accessory}
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H01H3/0253 2 {two co-operating contacts actuated independently (for combined circuit-breaker-contactors H01H89/10)}
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H01H2003/026 2 {specially adapted to avoid injury to occupants of a car during an accident}
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H01H2003/0266 2 {Operating part bringable in an inoperative position by an electrical drive}
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H01H2003/0273 2 {Manually irreversibly actuated switch}
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H01H2003/028 2 {Rotating knob or lever or tumbler that can be turned or pushed by hand in only one direction, e.g. by making inaccessible one side of a tumbler}
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H01H2003/0286 2 {having a weak point breaking or uncoupling on abnormal external force}
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H01H2003/0293 2 {with an integrated touch switch}
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H01H3/04 2 Levers (tumblers H01H23/14)
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H01H3/06 3 Means for securing to shaft of driving mechanism
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H01H3/08 2 Turn knobs
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H01H2003/085 3 {Retractable turn knobs, e.g. flush mounted}
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H01H3/10 3 Means for securing to shaft of driving mechanism
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H01H2003/105 4 {with compensation of misalignment in the link between the operating part, the driving mechanism and the switch, e.g. misalignment between two axis}
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H01H3/12 2 Push-buttons
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H01H3/122 3 {with enlarged actuating area, e.g. of the elongated bar-type; Stabilising means therefor}
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H01H3/125 4 {using a scissor mechanism as stabiliser}
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H01H2003/127 3 {Details of the key cap concerning the actuation by fingernails or having provision to allow usage with long fingernails}
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H01H3/14 2 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H3/141 3 {Cushion or mat switches}
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H01H3/142 4 {of the elongated strip type}
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H01H2003/143 5 {provisions for avoiding the contact actuation when the elongated strip is bended}
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H01H2003/145 4 {provisions for avoiding closure or contact damage during manufacturing or mounting}
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H01H2003/146 4 {being normally closed}
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H01H2003/147 4 {Special aspects regarding the peripheral edges of the mat switches}
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H01H2003/148 4 {the mat switch being composed by independently juxtaposed contact tiles, e.g. for obtaining a variable protected area}
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H01H3/16 2 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. for a door switch, a limit switch, a floor-levelling switch of a lift
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H01H3/161 3 {for actuation by moving a closing member, e.g. door, cover or lid (the switch controlling enclosed equipment H01H9/226; switches operated by a removable member, wherein one single insertion movement of a key comprises an unlocking stroke and a switch actuating stroke, e.g. security switch for safety guards H01H27/002)}
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H01H3/162 4 {associated with a hinge of the closing member}
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H01H3/163 4 {associated with locking or manipulating means of the closing member}
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H01H2003/165 4 {associated with an edge of the closing member}
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H01H3/166 3 {Self-adjusting mountings, transmissions and the like}
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H01H2003/167 4 {with locking of the adjusted parts in the adjusted position by a separate action}
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H01H3/168 3 {operated by movement in any direction}
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H01H3/18 3 the movement in one direction being intentionally by hand, e.g. for setting automatically cancelled trafficators
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H01H3/20 2 wherein an auxiliary movement thereof, or of an attachment thereto, is necessary before the main movement is possible or effective, e.g. for unlatching, for coupling
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H01H3/22 1 Power arrangements internal to the switch for operating the driving mechanism
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H01H3/222 2 {using electrodynamic repulsion}
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H01H2003/225 3 {with coil contact, i.e. the movable contact itself forms a secondary coil in which the repulsing current is induced by an operating current in a stationary coil}
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H01H3/227 2 {Interlocked hand- and power-operating mechanisms}
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H01H3/24 2 using pneumatic or hydraulic actuator {(for storing energy in a spring motor H01H3/301)}
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H01H3/26 2 using dynamo-electric motor (for storing energy in a spring motor H01H3/30)
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H01H3/262 3 {using a centrifugal mechanism}
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H01H3/264 3 {using a travelling nut mechanism}
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H01H2003/266 3 {having control circuits for motor operating switches, e.g. controlling the opening or closing speed of the contacts}
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H01H2003/268 3 {using a linear motor}
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H01H3/28 2 using electromagnet (for storing energy in a spring motor H01H3/30; for operating relays H01H45/00)
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H01H3/30 2 using spring motor
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H01H3/3005 3 {Charging means}
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H01H3/301 4 {using a fluid actuator}
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H01H3/3015 4 {using cam devices}
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H01H3/3021 4 {using unidirectional coupling}
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H01H3/3026 4 {in which the closing spring charges the opening spring or vice versa}
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H01H3/3031 3 {Means for locking the spring in a charged state}
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H01H2003/3036 4 {using of balls or rollers in the locking device}
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H01H3/3042 3 {using a torsion spring}
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H01H3/3047 3 {adapted for operation of a three-position switch, e.g. on-off-earth}
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H01H3/3052 3 {Linear spring motors}
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H01H2003/3057 3 {provisions for avoiding idling, e.g. preventing release of stored energy when a breaker is closed, or when the springs are not fully charged}
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H01H2003/3063 3 {Decoupling charging handle or motor at end of charging cycle or during charged condition}
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H01H2003/3068 3 {Housing support frame for energy accumulator and cooperating mechanism}
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H01H2003/3073 3 {Indication of the charge on the spring motor}
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H01H2003/3078 3 {using an inertia element, e.g. a flywheel, to controll the energy released by the spring}
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H01H2003/3084 3 {Kinetic energy of moving parts recuperated by transformation into potential energy in closing or opening spring to be used in next operation}
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H01H2003/3089 3 {Devices for manual releasing of locked charged spring motor; Devices for remote releasing}
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H01H2003/3094 3 {allowing an opening - closing - opening [OCO] sequence}
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H01H3/32 1 Driving mechanisms, i.e. for transmitting driving force to the contacts (snap-action arrangements H01H5/00; introducing a predetermined time delay H01H7/00)
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H01H2003/323 2 {the mechanisms being adjustable}
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H01H2003/326 2 {using bearings}
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H01H3/34 2 using ratchet
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H01H3/36 2 using belt, chain, or cord
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H01H3/38 2 using spring or other flexible shaft coupling
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H01H3/40 2 using friction, toothed, or screw-and-nut gearing
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H01H2003/405 3 {using a walking nut}
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H01H3/42 2 using cam or eccentric
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H01H3/44 2 using Geneva movement
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H01H3/46 2 using rod or lever linkage, e.g. toggle
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H01H2003/463 3 {using a blade spring lever for perpendicular force transmission}
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H01H2003/466 3 {using a living hinge to connect the levers}
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H01H3/48 2 using lost-motion device
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H01H3/50 2 with indexing or locating means, e.g. indexing by ball and spring
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H01H3/503 3 {making use of electromagnets}
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H01H2003/506 3 {making use of permanent magnets}
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H01H3/52 2 with means to ensure stopping at intermediate operative positions
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H01H3/54 1 Mechanisms for coupling or uncoupling operating parts, driving mechanisms, or contacts
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H01H3/56 2 using electromagnetic clutch
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H01H3/58 2 using friction, toothed, or other mechanical clutch
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H01H3/60 1 Mechanical arrangements for preventing or damping vibration or shock
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H01H3/605 2 {making use of a fluid damper}
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H01H3/62 1 Lubricating means structurally associated with the switch (for lubricating contact-making surfaces H01H1/60)
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H01H5/00 0 Snap-action arrangements, i.e. in which during a single opening operation or a single closing operation energy is first stored and then released to produce or assist the contact movement
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H01H5/02 1 Energy stored by the attraction or repulsion of magnetic parts
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H01H5/04 1 Energy stored by deformation of elastic members (by deformation of bimetallic element in thermally-actuated switches H01H37/54)
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H01H5/045 2 {making use of cooperating spring loaded wedging or camming parts between operating member and contact structure}
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H01H5/06 2 by compression or extension of coil springs
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H01H5/08 3 one end of spring transmitting movement to the contact member when the other end is moved by the operating part
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H01H5/10 3 one end of spring being fixedly connected to the stationary or movable part of the switch and the other end reacting with a movable or stationary rigid member respectively through pins, cams, toothed or other shaped surfaces
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H01H5/12 3 having two or more snap-action motions in succession
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H01H5/14 2 by twisting of torsion members
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H01H5/16 3 with auxiliary means for temporarily holding parts until torsion member is sufficiently strained
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H01H5/18 2 by flexing of blade springs
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H01H5/20 3 single blade moved across dead-centre position
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H01H5/22 3 blade spring with at least one snap-acting leg and at least one separate contact-carrying or contact-actuating leg
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H01H5/24 4 having three legs
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H01H5/26 3 having two or more snap-action motions in succession
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H01H5/28 3 two separate blade springs forming a toggle
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H01H5/30 2 by buckling of disc springs
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H01H7/00 0 Devices for introducing a predetermined time delay between the initiation of the switching operation and the opening or closing of the contacts (time or time-programme switches H01H43/00)
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H01H7/02 1 with fluid timing means
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H01H7/03 2 with dash-pots
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H01H7/04 2 with flies, i.e. fan governors
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H01H7/06 1 with thermal timing means
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H01H7/08 1 with timing by mechanical speed-control devices
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H01H7/10 2 by escapement
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H01H7/12 3 mechanical
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H01H7/14 3 electromagnetic
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H01H7/16 1 Devices for ensuring operation of the switch at a predetermined point in the ac cycle (circuit arrangements H01H9/56)
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H01H9/00 0 Details of switching devices, not covered by groups H01H1/00 - H01H7/00
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H01H9/0005 1 {Tap change devices}
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H01H9/0011 2 {Voltage selector switches}
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H01H9/0016 2 {Contact arrangements for tap changers}
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H01H2009/0022 3 {Mounting of the fixed contacts or taps on cylindrical wall of oil vessel containing the tap changer; Details of screening}
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H01H9/0027 2 {Operating mechanisms}
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H01H9/0033 3 {with means for indicating the selected tap or limiting the number of selectable taps}
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H01H9/0038 2 {making use of vacuum switches}
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H01H9/0044 2 {Casings; Mountings; Disposition in transformer housing}
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H01H2009/005 3 {Details concerning the sealing of the oil filled casings}
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H01H2009/0055 2 {Oil filters for tap change devices}
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H01H2009/0061 2 {Monitoring tap change switching devices}
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H01H9/0066 1 {Auxiliary contact devices (for arc transfer H01H9/38; for electromagnetic relays H01H50/541)}
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H01H9/0072 1 {particular to three-phase switches (synchronous switching H01H9/563)}
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H01H2009/0077 1 {using recyclable materials, e.g. for easier recycling or minimising the packing material}
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H01H2009/0083 1 {using redundant components, e.g. two pressure tubes for pressure switch}
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H01H2009/0088 1 {Details of rotatable shafts common to more than one pole or switch unit}
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H01H2009/0094 1 {Details of rotatable shafts which are subdivided; details of the coupling means thereof}
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H01H9/02 1 Bases, casings, or covers (accommodating more than one switch or a switch and another electrical component H02B1/26)
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H01H9/0207 2 {Adjustable mounting of casings}
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H01H9/0214 2 {Hand-held casings}
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H01H2009/0221 3 {the switches being fixed to the operator's hand, e.g. integrated in a glove or fixed to a ring}
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H01H9/0228 3 {Line cord switches}
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H01H9/0235 3 {specially adapted for remote control, e.g. of audio or video apparatus}
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H01H9/0242 4 {Protective enclosures; Cushioning means}
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H01H9/025 4 {Stands or organisers to facilitate location or operation}
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H01H2009/0257 4 {Multisided remote control, comprising control or display elements on at least two sides, e.g. front and back surface}
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H01H9/0264 2 {Protective covers for terminals}
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H01H9/0271 2 {structurally combining a switch and an electronic component (for relays H01H50/021)}
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H01H2009/0278 2 {Casings containing special noise reduction means, e.g. elastic foam between inner and outer casing}
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H01H2009/0285 2 {Casings overmoulded over assembled switch or relay}
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H01H2009/0292 2 {Transparent window or opening, e.g. for allowing visual inspection of contact position or contact condition}
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H01H9/04 2 Dustproof, splashproof, drip-proof, waterproof, or flameproof casings
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H01H9/041 3 {Casings hermetically closed by a diaphragm through which passes an actuating member (vacuum switches H01H33/66)}
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H01H9/042 3 {Explosion-proof cases}
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H01H9/043 4 {with pressure-relief devices}
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H01H9/045 4 {with interlocking mechanism between cover and operating mechanism}
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H01H9/046 4 {with internal explosion inhibiting means}
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H01H9/047 3 {provided with venting means}
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H01H2009/048 3 {using a sealing boot, e.g. the casing having separate elastic body surrounding the operating member and hermetically closing the opening for it}
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H01H9/06 2 Casing of switch constituted by a handle serving a purpose other than the actuation of the switch, e.g. by the handle of a vacuum cleaner
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H01H9/061 3 {enclosing a continuously variable impedance}
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H01H9/063 3 {enclosing a reversing switch}
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H01H2009/065 3 {Battery operated hand tools in which the battery and the switch are directly connected}
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H01H2009/066 3 {having switches mounted on a control handle, e.g. gear shift lever}
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H01H2009/068 3 {with switches mounted on a handlebar, e.g. for motorcycles, fork lift trucks, etc.}
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H01H9/08 1 Arrangements to facilitate replacement of a switch, e.g. cartridge housing
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H01H9/085 2 {contact separation effected by removing contact carrying element}
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H01H9/10 1 Adaptation for built-in fuses (mounting switch and fuse separately on, or in, common support H02B1/18)
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H01H9/102 2 {Fuses mounted on or constituting the movable contact parts of the switch}
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H01H9/104 2 {with interlocking mechanism between switch and fuse}
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H01H9/106 2 {fuse and switch being connected in parallel}
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H01H2009/108 2 {Building a sliding and/or a removable bridging connector for batteries}
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H01H9/12 1 Means for earthing parts of switch not normally conductively connected to the contacts
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H01H9/14 1 Adaptation for built-in safety spark gaps
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H01H9/16 1 Indicators for switching condition, e.g. "on" or "off"
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H01H9/161 2 {comprising light emitting elements}
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H01H9/162 3 {Means to facilitate removal or replacement of light-emitting elements}
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H01H2009/164 3 {the light emitting elements being incorporated in and movable with the operating part}
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H01H9/165 2 {comprising numbered dials (thumb-wheel switches H01H19/001)}
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H01H9/167 2 {Circuits for remote indication}
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H01H9/168 2 {making use of an electromagnetic wave communication}
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H01H9/18 1 Distinguishing marks on switches, e.g. for indicating switch location in the dark; Adaptation of switches to receive distinguishing marks
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H01H9/181 2 {using a programmable display, e.g. LED or LCD}
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H01H9/182 2 {Illumination of the symbols or distinguishing marks (H01H9/181 takes precedence)}
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H01H2009/183 3 {Provisions for enhancing the contrast between the illuminated symbol and the background or between juxtaposed symbols}
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H01H2009/184 3 {Illumination of symbols by using laser light}
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H01H9/185 2 {Fluorescent or phosphorescent symbols or distinguishing marks (H01H9/181 takes precedence)}
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H01H2009/186 2 {using an electroluminiscent panel}
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H01H2009/187 2 {having symbols engraved or printed by laser}
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H01H2009/188 2 {with indication of rating}
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H01H2009/189 2 {with a tactile symbol or indication, e.g. for blind people}
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H01H9/20 1 Interlocking, locking, or latching mechanisms
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H01H9/22 2 for interlocking between casing, cover, or protective shutter and mechanism for operating contacts {(explosion-proof cases H01H9/045; built-in fuses and interlocking mechanisms H01H9/104; by automatic release of circuit breakers H01H71/126)}
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H01H9/223 3 {Defeatable locking means}
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H01H9/226 3 {the casing containing electrical equipment other than and operated by the switch}
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H01H9/24 2 for interlocking two or more parts of the mechanism for operating contacts
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H01H9/26 2 for interlocking two or more switches ({H01H13/568 takes precedence;} by a detachable member H01H9/28 {; for electromagnetic relays H01H50/323})
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H01H9/262 3 {using flexible transmission elements, e.g. Bowden cable}
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H01H2009/265 3 {with interlocking of more than two switches}
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H01H2009/267 3 {with interlocking of two out of three switches, e.g. two switches each connecting a power supply to a busbar and a bus coupling switch interlocked in such a way that the power supplies are never connected in parallel}
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H01H9/28 2 for locking switch parts by a key or equivalent removable member (switches operated by a key H01H27/00; locking by removable part of two-part coupling device H01R)
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H01H9/281 3 {making use of a padlock (H01H9/287 takes precedence)}
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H01H9/282 4 {and a separate part mounted or mountable on the switch assembly and movable between an unlocking position and a locking position where it can be secured by the padlock}
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H01H9/283 5 {the part being removable}
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H01H9/285 3 {Locking mechanisms incorporated in the switch assembly and operable by a key or a special tool}
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H01H9/286 3 {making use of a removable locking part acting directly on the operating part (H01H9/281 takes precedence)}
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H01H9/287 3 {wherein the operating part is made inaccessible or more difficult to access by a lid, cover or guard, e.g. lockable covers}
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H01H2009/288 3 {Provisions relating to welded contacts}
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H01H9/30 1 Means for extinguishing or preventing arc between current-carrying parts
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H01H9/302 2 {wherein arc-extinguishing gas is evolved from stationary parts}
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H01H2009/305 2 {including means for screening for arc gases as protection of mechanism against hot arc gases or for keeping arc gases in the arc chamber}
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H01H2009/307 2 {with slow break, e.g. for AC current waiting for a zero crossing}
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H01H9/32 2 Insulating body insertable between contacts
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H01H9/34 2 Stationary parts for restricting or subdividing the arc, e.g. barrier plate
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H01H9/341 3 {Barrier plates carrying electrodes}
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H01H9/342 3 {Venting arrangements for arc chutes}
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H01H2009/343 4 {with variable venting aperture function of arc chute internal pressure, e.g. resilient flap-valve or check-valve}
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H01H9/345 3 {Mounting of arc chutes}
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H01H9/346 3 {Details concerning the arc formation chamber}
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H01H2009/347 3 {using lids for closing the arc chamber after assembly}
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H01H2009/348 3 {Provisions for recirculation of arcing gasses to improve the arc extinguishing, e.g. move the arc quicker into the arcing chamber}
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H01H9/36 3 Metal parts
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H01H9/362 4 {Mounting of plates in arc chamber}
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H01H2009/365 4 {using U-shaped plates}
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H01H2009/367 4 {defining a recurrent path, e.g. the subdivided arc is moved in a closed path between each pair of splitter plates}
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H01H9/38 2 Auxiliary contacts on to which the arc is transferred from the main contacts (using arcing-horns H01H9/46)
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H01H9/383 3 {Arcing contact pivots relative to the movable contact assembly}
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H01H9/386 3 {Arcing contact pivots relative to the fixed contact assembly}
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H01H9/40 2 Multiple main contacts for the purpose of dividing the current through, or potential drop along, the arc
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H01H9/42 2 Impedances connected with contacts
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H01H9/44 2 using blow-out magnet
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H01H9/443 3 {using permanent magnets}
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H01H9/446 3 {using magnetisable elements associated with the contacts}
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H01H9/46 2 using arcing horns (using blow-out magnet H01H9/44)
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H01H9/465 3 {Shunt circuit closed by transferring the arc onto an auxiliary electrode}
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H01H9/48 1 Means for preventing discharge to non-current-carrying parts, e.g. using corona ring
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H01H9/50 1 Means for detecting the presence of an arc or discharge
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H01H9/52 1 Cooling of switch parts (cooling of contacts H01H1/62)
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H01H2009/523 2 {by using heat pipes}
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H01H2009/526 2 {of the high voltage switches}
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H01H9/54 1 Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
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H01H9/541 2 {Contacts shunted by semiconductor devices}
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H01H9/542 3 {Contacts shunted by static switch means}
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H01H2009/543 4 {third parallel branch comprising an energy absorber, e.g. MOV, PTC, Zener}
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H01H2009/544 4 {the static switching means being an insulated gate bipolar transistor, e.g. IGBT, Darlington configuration of FET and bipolar transistor}
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H01H2009/545 4 {comprising a parallel semiconductor switch being fired optically, e.g. using a photocoupler,}
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H01H2009/546 4 {the static switching means being triggered by the voltage over the mechanical switch contacts}
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H01H9/547 2 {Combinations of mechanical switches and static switches, the latter being controlled by the former}
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H01H9/548 2 {Electromechanical and static switch connected in series}
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H01H9/56 2 for ensuring operation of the switch at a predetermined point in the ac cycle
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H01H9/563 3 {for multipolar switches, e.g. different timing for different phases, selecting phase with first zero-crossing}
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H01H2009/566 3 {with self learning, e.g. measured delay is used in later actuations}
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H01H11/00 0 Apparatus or processes specially adapted for the manufacture of electric switches (processes specially adapted for manufacture of rectilinearly movable switches having a plurality of operating members associated with different sets of contacts, e.g. keyboards, H01H13/88)
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H01H11/0006 1 {for converting electric switches (H01H13/564 takes precedence)}
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H01H11/0012 2 {for converting normally open to normally closed switches and vice versa}
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H01H11/0018 2 {for allowing different operating parts}
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H01H2011/0025 3 {with provisions for allowing different orientation of the operating part, e.g. turning knob can be mounted in different positions}
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H01H11/0031 2 {for allowing different types or orientation of connections to contacts}
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H01H2011/0037 3 {with removable or replaceable terminal blocks}
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H01H2011/0043 2 {for modifying the number or type of operating positions, e.g. momentary and stable}
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H01H11/005 1 {of reed switches}
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H01H11/0056 1 {comprising a successive blank-stamping, insert-moulding and severing operation}
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H01H11/0062 1 {Testing or measuring non-electrical properties of switches, e.g. contact velocity (monitoring contacts H01H1/0015; monitoring gas density H01H33/563; monitoring vacuum H01H33/668; calibrating H01H69/01; adjusting H01H71/74; testing of electrical properties G01R31/333)}
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H01H2011/0068 2 {measuring the temperature of the switch or parts thereof}
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H01H2011/0075 1 {calibrating mechanical switching properties, e.g. "snap or switch moment", by mechanically deforming a part of the switch, e.g. elongating a blade spring by puncturing it with a laser}
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H01H2011/0081 1 {using double shot moulding, e.g. for forming elastomeric sealing elements on form stable casing}
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H01H2011/0087 1 {Welding switch parts by use of a laser beam}
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H01H2011/0093 1 {Standardization, e.g. limiting the factory stock by limiting the number of unique, i.e. different components}
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H01H11/02 1 for mercury switches
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H01H11/04 1 of switch contacts
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H01H11/041 2 {by bonding of a contact marking face to a contact body portion}
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H01H11/042 3 {by mechanical deformation}
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H01H11/043 3 {by resistance welding}
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H01H11/045 3 {with the help of an intermediate layer (contacts provided with a solder layer H01H1/0231)}
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H01H2011/046 3 {by plating}
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H01H2011/047 3 {on both sides of the contact body portion}
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H01H11/048 2 {by powder-metallurgical processes}
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H01H11/06 2 Fixing of contacts to carrier {; Fixing of contacts to insulating carrier}
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H01H2011/062 3 {by inserting only}
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H01H2011/065 3 {by plating metal or conductive rubber on insulating substrate, e.g. Molded Interconnect Devices [MID]}
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H01H2011/067 3 {by deforming, e.g. bending, folding or caulking, part of the contact or terminal which is being mounted}
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H01H13/00 0 Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch (wherein the operating part is flexible H01H17/00)
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H01H13/02 1 Details
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H01H13/023 2 {Light-emitting indicators (for multi-layer switches H01H13/83)}
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H01H2013/026 3 {with two or more independent lighting elements located inside the push button switch that illuminate separate zones of push buttons}
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H01H13/04 2 Cases; Covers
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H01H13/06 3 Dustproof, splashproof, drip-proof, waterproof or flameproof casings
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H01H13/063 4 {Casings hermetically closed by a diaphragm through which passes an actuating member (vacuum switches H01H33/66)}
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H01H2013/066 4 {using bellows}
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H01H13/08 3 Casing of switch constituted by a handle serving a purpose other than the actuation of the switch
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H01H13/10 2 Bases; Stationary contacts mounted thereon
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H01H13/12 2 Movable parts; Contacts mounted thereon
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H01H13/14 3 Operating parts, e.g. push-button
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H01H13/16 4 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H13/18 4 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H13/183 5 {for actuation by moving a closing member, e.g. door, cover (H01H13/186, H01H27/002 take precedence; the switch controlling enclosed equipment H01H9/226)}
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H01H13/186 5 {wherein the pushbutton is rectilinearly actuated by a lever pivoting on the housing of the switch}
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H01H13/20 3 Driving mechanisms
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H01H13/22 4 acting with snap action (depending upon deformation of elastic members H01H13/26)
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H01H13/24 4 with means for introducing a predetermined time delay
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H01H13/26 2 Snap-action arrangements depending upon deformation of elastic members
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H01H13/28 3 using compression or extension of coil springs
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H01H13/285 4 {having a symmetrical configuration (H01H13/30 - H01H13/34 take precedence)}
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H01H13/30 4 one end of spring transmitting movement to the contact member when the other end is moved by the operating part
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H01H13/32 4 one end of spring being fixedly connected to the stationary or movable part of the switch and the other end reacting with a movable or stationary rigid member respectively through pins, cams, toothed, or other shaped surfaces
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H01H13/34 4 having two or more snap-action motions in succession
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H01H13/36 3 using flexing of blade springs
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H01H13/365 4 {having a symmetrical configuration (H01H13/38 - H01H13/46 take precedence)}
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H01H13/38 4 Single blade moved across dead-centre position
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H01H13/40 4 Blade spring with at least one snap-acting leg and at least one separate contact-carrying or contact-actuating leg
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H01H13/42 5 having three legs
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H01H13/44 4 having two or more snap-action motions in succession
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H01H13/46 4 two separate blade springs forming a toggle
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H01H13/48 3 using buckling of disc springs
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H01H13/50 1 having a single operating member
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H01H13/503 2 {Stacked switches}
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H01H13/506 2 {with a make-break action in a single operation}
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H01H13/52 2 the contact returning to its original state immediately upon removal of operating force, e.g. bell-push switch
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H01H2013/525 3 {using a return spring acting perpendicular to the actuating direction}
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H01H13/54 2 the contact returning to its original state a predetermined time interval after removal of operating force, e.g. for staircase lighting
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H01H13/56 2 the contact returning to its original state upon the next application of operating force
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H01H13/562 3 {making use of a heart shaped cam}
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H01H13/564 4 {convertible to momentary push button switches}
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H01H2013/566 5 {by removable or exchangeable parts}
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H01H13/568 4 {the contact also returning by some external action, e.g. interlocking, protection, remote control}
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H01H13/58 3 with contact-driving member rotated step-wise in one direction
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H01H13/585 4 {wherein the movable contact rotates around the axis of the push button}
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H01H13/60 3 with contact-driving member moved alternately in opposite directions
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H01H13/62 2 the contact returning to its original state upon manual release of a latch (latch released by second push-button H01H13/68)
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H01H13/64 2 wherein the switch has more than two electrically distinguishable positions, e.g. multi-position push-button switches
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H01H13/66 3 the operating member having only two positions
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H01H13/68 1 having two operating members, one for opening and one for closing the same set of contacts (single operating member protruding from different sides of switch casing for alternate pushing upon opposite ends H01H15/22)
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H01H13/70 1 having a plurality of operating members associated with different sets of contacts, e.g. keyboard (mounting together a plurality of independent switches H02B)
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H01H13/7006 2 {comprising a separate movable contact element for each switch site, all other elements being integrated in layers}
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H01H13/7013 2 {in which the movable contacts of each switch site or of a row of switch sites are formed in a single plate}
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H01H13/702 2 with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches
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H01H13/703 3 characterised by spacers between contact carrying layers
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H01H13/704 3 characterised by the layers, e.g. by their material or structure (H01H13/703 takes precedence)
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H01H13/705 3 characterised by construction, mounting or arrangement of operating parts, e.g. push-buttons or keys
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H01H13/7057 4 characterised by the arrangement of operating parts in relation to each other, e.g. pre-assembled groups of keys
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H01H13/7065 4 characterised by the mechanism between keys and layered keyboards
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H01H13/7073 5 characterised by springs, e.g. Euler springs
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H01H13/72 2 wherein the switch has means for limiting the number of operating members that can concurrently be in the actuated position
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H01H13/74 3 each contact set returning to its original state only upon actuation of another of the operating members
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H01H13/76 2 wherein some or all of the operating members actuate different combinations of the contact sets, e.g. ten operating members actuating different combinations of four contact sets
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H01H13/78 2 characterised by the contacts or the contact sites
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H01H13/785 3 characterised by the material of the contacts, e.g. conductive polymers
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H01H13/79 3 characterised by the form of the contacts, e.g. interspersed fingers or helical networks
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H01H13/80 3 characterised by the manner of cooperation of the contacts, e.g. with both contacts movable or with bounceless contacts
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H01H13/803 3 characterised by the switching function thereof, e.g. normally closed contacts or consecutive operation of contacts
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H01H13/807 3 characterised by the spatial arrangement of the contact sites, e.g. superimposed sites
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H01H13/81 2 characterised by electrical connections to external devices
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H01H13/82 2 characterised by contact space venting means
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H01H13/83 2 characterised by legends, e.g. Braille, liquid crystal displays, light emitting or optical elements
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H01H13/84 2 characterised by ergonomic functions, e.g. for miniature keyboards; characterised by operational sensory functions, e.g. sound feedback (legends H01H13/83)
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H01H13/85 3 characterised by tactile feedback features
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H01H13/86 2 characterised by the casing, e.g. sealed casings or casings reducible in size
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H01H13/88 2 Processes specially adapted for manufacture of rectilinearly movable switches having a plurality of operating members associated with different sets of contacts, e.g. keyboards
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H01H15/00 0 Switches having rectilinearly-movable operating part or parts adapted for actuation in opposite directions, e.g. slide switch
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H01H15/005 1 {adapted for connection with printed circuit boards}
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H01H15/02 1 Details
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H01H15/025 2 {Light-emitting indicators}
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H01H15/04 2 Stationary parts; Contacts mounted thereon
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H01H15/06 2 Movable parts; Contacts mounted thereon
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H01H15/08 3 Contact arrangements for providing make-before-break operation, e.g. for on-load tap-changing
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H01H15/10 3 Operating parts
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H01H15/102 4 {comprising cam devices}
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H01H15/105 5 {Adjustable cams}
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H01H15/107 5 {actuating conventional selfcontained microswitches (H01H15/105 takes precedence)}
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H01H15/12 4 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H15/14 4 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H15/16 3 Driving mechanisms
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H01H15/18 4 acting with snap action
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H01H15/20 4 with means for introducing a predetermined time delay
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H01H15/22 1 having a single operating part protruding from different sides of switch casing for alternate actuation from opposite ends
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H01H15/24 1 having a single operating part only protruding from one side of the switch casing for alternate pushing and pulling
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H01H17/00 0 Switches having flexible operating part adapted only for pulling, e.g. cord, chain {(for emergency stop switches H01H3/0226)}
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H01H17/02 1 Details
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H01H17/04 2 Stationary parts (guides H01H17/14)
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H01H17/06 2 Movable parts (guides H01H17/14)
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H01H17/08 3 Operating part, e.g. cord
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H01H17/10 4 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H17/12 4 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H17/14 2 Guiding means for flexible operating part
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H01H17/16 1 having a single flexible operating part adapted for pulling at one end only
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H01H17/165 2 {secured to a part of the switch mechanism that has only rectilinear movement}
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H01H17/18 2 secured to part of the switch driving mechanism that has only angular movement
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H01H17/20 3 the contact returning to its original state immediately upon removal of operating force
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H01H17/22 3 the contact returning to its original state upon the next application of operating force
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H01H17/24 2 secured to a part of the switch driving mechanism that has both angular and rectilinear motion
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H01H17/26 1 having two flexible operating parts; having a single operating part adapted for pulling at both ends
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H01H17/28 2 secured to part or parts of the switch driving mechanism having only rectilinear motion
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H01H17/30 2 secured to a part or parts of the switch driving mechanism having only angular motion
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H01H19/00 0 Switches operated by an operating part which is rotatable about a longitudinal axis thereof and which is acted upon directly by a solid body external to the switch, e.g. by a hand
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H01H19/001 1 {Thumb wheel switches}
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H01H19/003 2 {having a pushbutton actuator}
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H01H19/005 1 {Electromechanical pulse generators}
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H01H2019/006 2 {being rotation direction sensitive, e.g. the generated pulse or code depends on the direction of rotation of the operating part}
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H01H2019/008 1 {with snap mounting of rotatable part on fixed part, e.g. rotor on stator, operating knob on switch panel}
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H01H19/02 1 Details
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H01H19/025 2 {Light-emitting indicators}
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H01H19/03 2 Means for limiting the angle of rotation of the operating part
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H01H19/04 2 Cases; Covers
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H01H19/06 3 Dustproof, splashproof, drip-proof, waterproof, or flameproof casings
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H01H19/065 4 {Casings hermetically closed by a diaphragm through which passes an actuating member (vacuum switches H01H33/66)}
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H01H19/08 2 Bases; Stationary contacts mounted thereon
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H01H19/10 2 Movable parts; Contacts mounted thereon
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H01H19/11 3 with indexing means
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H01H19/115 4 {using molded elastic parts only}
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H01H19/12 3 Contact arrangements for providing make-before-break operation, e.g. for on-load tap-changing
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H01H19/14 3 Operating parts, e.g. turn knob
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H01H2019/143 4 {having at least two concentric turn knobs}
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H01H2019/146 4 {Roller type actuators}
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H01H19/16 4 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H19/18 4 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H19/183 5 {adapted for operation by the simultaneous action of two cam plates, rotating at different speeds}
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H01H19/186 5 {with travelling nuts}
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H01H19/20 3 Driving mechanisms allowing angular displacement of the operating part to be effective in either direction
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H01H19/22 4 incorporating lost motion
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H01H19/24 4 acting with snap action
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H01H19/26 4 with means for introducing a predetermined time delay
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H01H19/28 3 Driving mechanisms allowing angular displacement of the operating part to be effective or possible in only one direction
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H01H19/30 4 incorporating lost motion
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H01H19/32 4 acting with snap action
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H01H19/34 4 with means for introducing a predetermined time delay
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H01H19/36 1 the operating part having only two operative positions, e.g. relatively displaced by 180 degrees
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H01H19/38 2 Change-over switches
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H01H19/40 3 having only axial contact pressure
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H01H19/42 2 providing more than two electrically different conditions, e.g. for closing either or both of two circuits
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H01H19/44 3 having only axial contact pressure
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H01H19/46 1 the operating part having three operative positions, e.g. off/star/delta
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H01H19/48 2 having only axial contact pressure
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H01H19/50 1 the operating part having four operative positions, e.g. off/two-in-series/one-only/two-in-parallel
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H01H19/52 2 having only axial contact pressure
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H01H19/54 1 the operating part having at least five or an unspecified number of operative positions
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H01H19/56 2 Angularly-movable actuating part carrying contacts, e.g. drum switch
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H01H19/563 3 {with an initial separation movement perpendicular to the switching movement}
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H01H19/566 3 {in which the contact making surfaces are inclined, i.e. not perpendicular, to the axial or radial direction}
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H01H19/58 3 having only axial contact pressure, e.g. disc switch, wafer switch
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H01H19/585 4 {provided with printed circuit contacts}
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H01H19/60 2 Angularly-movable actuating part carrying no contacts
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H01H19/605 3 {in which the actuation of the contacts depends on the direction of rotation}
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H01H19/62 3 Contacts actuated by radial cams
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H01H19/623 4 {Adjustable cams}
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H01H19/626 4 {actuating bridging contacts (H01H19/623 takes precedence)}
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H01H19/63 3 Contacts actuated by axial cams {(H01H19/6355 takes precedence)}
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H01H19/635 3 Contacts actuated by rectilinearly-movable member linked to operating part, e.g. by pin and slot
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H01H19/6355 4 {using axial cam devices for transforming the angular movement into linear movement along the axis of rotation}
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H01H19/64 1 Encased switches adapted for ganged operation when assembled in a line with identical switches, e.g. stacked switches
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H01H21/00 0 Switches operated by an operating part in the form of a pivotable member acted upon directly by a solid body, e.g. by a hand (tumbler or rocker switches H01H23/00; switches having an operating part movable angularly in more than one plane H01H25/04)
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H01H21/02 1 Details
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H01H21/025 2 {Light-emitting indicators}
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H01H21/04 2 Cases; Covers
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H01H21/06 3 interlocked with operating mechanism
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H01H21/08 3 Dustproof, splashproof, drip-proof, waterproof, or flameproof casings
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H01H21/085 4 {Casings hermetically closed by a diaphragm through which passes an actuating member (vacuum switches H01H33/66)}
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H01H21/10 3 Casing of switch constituted by a handle serving a purpose other than the actuation of the switch
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H01H21/12 2 Bases; Stationary contacts mounted thereon
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H01H21/14 2 Means for increasing contact pressure
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H01H21/16 2 Adaptation for built-in fuse
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H01H21/165 3 {Fuses mounted on, or constituting the movable contact parts of, the switch}
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H01H21/18 2 Movable parts; Contacts mounted thereon
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H01H21/20 3 Contact arrangements for providing make-before-break operation, e.g. for on-load tap-changing
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H01H21/22 3 Operating parts, e.g. handle
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H01H2021/225 4 {with push-pull operation, e.g. which can be pivoted in both directions by pushing or pulling on the same extremity of the operating member}
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H01H21/24 4 biased to return to normal position upon removal of operating force
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H01H21/245 5 {the contact returning to its original state upon the next application of operating force}
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H01H21/26 5 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H21/28 5 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H21/282 6 {for actuation by moving a closing member, e.g. door, cover (the switch controlling enclosed equipment H01H9/226)}
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H01H21/285 6 {having an operating arm actuated by the movement of the body and mounted on an axis converting its rotating movement into a rectilinear switch activating movement}
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H01H2021/287 6 {with adjustable head, e.g. the actuator head can have different positions in relation to the limit switch itself}
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H01H21/30 4 not biased to return to a normal position upon removal of operating force
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H01H21/32 5 adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H21/34 5 adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H21/36 3 Driving mechanisms
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H01H21/38 4 incorporating lost motion
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H01H21/40 4 having snap action
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H01H21/42 5 produced by compression or extension of coil spring
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H01H21/44 5 produced by flexing blade springs
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H01H21/46 5 with two or more snap-action motions in succession
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H01H21/48 4 incorporating a ratchet mechanism
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H01H21/50 4 with indexing or latching means, e.g. indexing by ball and spring; with means to ensure stopping at intermediate operative positions
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H01H21/52 4 with means for introducing a predetermined time delay
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H01H21/54 1 Lever switches with blade-type contact co-operating with one or two spring-clip contacts, e.g. knife switch
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H01H21/56 2 making contact in one position only
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H01H21/58 2 Change-over switches without stable intermediate position
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H01H21/60 2 Change-over switches with stable intermediate position
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H01H21/86 1 Switches with abutting contact carried by operating part, e.g. telegraph tapping key
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H01H21/88 2 with intermediate position of rest
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H01H23/00 0 Tumbler or rocker switches, i.e. switches characterised by being operated by rocking an operating member in the form of a rocker button
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H01H23/003 1 {with more than one electrically distinguishable condition in one or both positions}
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H01H23/006 1 {adapted for connection with printed circuit boards}
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H01H23/02 1 Details
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H01H23/025 2 {Light-emitting indicators}
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H01H23/04 2 Cases; Covers
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H01H23/06 3 Dustproof, splashproof, drip-proof, waterproof, or flameproof casings
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H01H23/065 4 {Casings hermetically closed by a diaphragm through which passes an actuating member (vacuum switches H01H33/66)}
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H01H23/08 2 Bases; Stationary contacts mounted thereon
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H01H23/10 2 Adaptation for built-in fuse
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H01H23/105 3 {Fuses mounted on, or constituting the movable part of, the switch}
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H01H23/12 2 Movable parts; Contacts mounted thereon
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H01H23/14 3 Tumblers
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H01H23/141 4 {provided with extensions, e.g. for actuation by a child}
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H01H23/143 4 {having a generally flat elongated shape}
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H01H23/145 5 {the actuating surface having two slightly inclined areas extending from the middle outward}
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H01H23/146 4 {having a generally tubular or conical elongated shape, e.g. dolly}
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H01H23/148 4 {actuated by superimposed sliding element (H01H23/141 takes precedence)}
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H01H23/16 3 Driving mechanisms
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H01H23/162 4 {incorporating links interconnecting tumbler and contact arm}
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H01H23/164 4 {with rectilinearly movable member carrying the contacts}
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H01H23/166 4 {with positive action}
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H01H23/168 4 {using cams}
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H01H23/18 4 incorporating lost motion
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H01H23/20 4 having snap action
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H01H23/205 5 {using a compression spring between tumbler and an articulated contact plate}
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H01H23/22 4 with means for introducing a predetermined time delay
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H01H23/24 1 with two operating positions
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H01H23/26 2 one of which positions is unstable
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H01H23/28 1 with three operating positions
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H01H23/30 2 with stable centre positions and one or both end positions unstable
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H01H25/00 0 Switches with compound movement of handle or other operating part
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H01H25/002 1 {having an operating member rectilinearly slidable in different directions}
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H01H2025/004 2 {the operating member being depressable perpendicular to the other directions}
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H01H25/006 1 {having an operating member slidable in a plane in one direction and pivotable around an axis located in the sliding plane perpendicular to the sliding direction}
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H01H25/008 1 {Operating part movable both angularly and rectilinearly, the rectilinear movement being perpendicular to the axis of angular movement}
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H01H25/04 1 Operating part movable angularly in more than one plane, e.g. joystick
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H01H25/041 2 {having a generally flat operating member depressible at different locations to operate different controls}
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H01H2025/043 3 {the operating member being rotatable around wobbling axis for additional switching functions}
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H01H2025/045 3 {having a rotating dial around the operating member for additional switching functions}
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H01H2025/046 3 {having a spherical bearing between operating member and housing or bezel}
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H01H2025/048 2 {having a separate central push, slide or tumbler button which is not integral with the operating part that surrounds it}
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H01H25/06 1 Operating part movable both angularly and rectilinearly, the rectilinear movement being along the axis of angular movement
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H01H25/065 2 {using separate operating parts, e.g. a push button surrounded by a rotating knob}
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H01H27/00 0 Switches operated by a removable member, e.g. key, plug or plate; Switches operated by setting members according to a single predetermined combination out of several possible settings (combined with plug-and-socket connectors H01R13/70; with current-carrying plug H01R31/08)
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H01H27/002 1 {wherein one single insertion movement of a key comprises an unlocking stroke and a switch actuating stroke, e.g. security switch for safety guards}
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H01H2027/005 2 {the key receiving part having multiple openings to allow keys from different directions to operate the switch}
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H01H27/007 2 {the switch being lockable by remote control, e.g. by electromagnet}
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H01H27/04 1 Insulating plug or plate inserted between normally closed contacts
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H01H27/06 1 Key inserted and then turned to effect operation of the switch
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H01H27/063 2 {wherein the switch cannot be moved to a third position, e.g. start position, unless the preceding movement was from a first position to a second position, e.g. ignition position}
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H01H2027/066 2 {having anti-tamper provisions, e.g. avoiding the removal of the lock cylinder}
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H01H27/08 2 wherein the key cannot be removed until the switch is returned to its original position {(H01H27/063 takes precedence)}
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H01H27/10 1 Switch operated by setting members according to a single predetermined combination out of several possible settings
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H01H29/00 0 Switches having at least one liquid contact (solid contacts wetted or soaked with mercury H01H1/08)
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H01H29/002 1 {Inertia switches}
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H01H29/004 1 {Operated by deformation of container}
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H01H29/006 1 {Self interrupters, e.g. with periodic or other repetitive opening and closing of contacts}
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H01H2029/008 1 {using micromechanics, e.g. micromechanical liquid contact switches or [LIMMS]}
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H01H29/02 1 Details
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H01H29/04 2 Contacts; Containers for liquid contacts
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H01H29/06 3 Liquid contacts characterised by the material thereof
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H01H29/08 2 Means for introducing a predetermined time delay
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H01H29/10 3 by constricting the flow of the contact liquid
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H01H29/12 2 Operating mechanisms adapted for operation by a part of the human body other than the hand, e.g. by foot
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H01H29/14 2 Operating mechanisms adapted for actuation at a limit or other predetermined position in the path of a body, the relative movement of switch and body being primarily for a purpose other than the actuation of the switch, e.g. door switch, limit switch, floor-levelling switch of a lift
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H01H29/16 1 operated by dipping soil contact into stationary contact liquid
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H01H29/18 1 with level of surface of contact liquid displaced by non-electrical contact-making plunger
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H01H29/20 1 operated by tilting contact-liquid container
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H01H29/22 2 wherein contact is made and broken between liquid and solid
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H01H29/24 2 wherein contact is made and broken between liquid and liquid
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H01H29/26 1 with level of surface of contact liquid displaced by centrifugal action
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H01H29/28 1 with level of surface of contact liquid displaced by fluid pressure
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H01H29/30 1 with level of surface of contact liquid displaced by expansion or evaporation thereof
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H01H29/32 1 with contact made by a liquid jet, e.g. earthing switch with contact made by jet of water
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H01H31/00 0 Air-break switches for high tension without arc-extinguishing or arc-preventing means (in combination with high tension or heavy-current switches with arc-extinguishing or arc-preventing means H01H33/00)
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H01H31/003 1 {Earthing switches (H01H31/02 - H01H31/26 take precedence; contact made by liquid jet H01H29/32; for substations H02B1/16, H02B5/01; for withdrawable switchgear H02B11/28; for gas-insulated switchgear H02B13/075)}
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H01H31/006 1 {adapted to be operated by a hot stick; Hot sticks therefor}
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H01H31/02 1 Details
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H01H31/023 2 {Base and stationary contacts mounted thereon}
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H01H31/026 2 {Movable parts and contacts mounted thereon}
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H01H31/04 2 Interlocking mechanisms
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H01H31/06 3 for interlocking between casing, cover, or protective shutter and mechanism for operating contacts
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H01H31/08 3 for interlocking two or more parts of the mechanism for operating contacts
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H01H31/10 3 for interlocking two or more switches
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H01H31/12 2 Adaptation for built-in fuse
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H01H31/122 3 {Fuses mounted on, or constituting the movable contact parts of, the switch}
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H01H31/125 4 {with a pivotally supported fuse, hanging on a fixed contact in the open position of the switch (H01H31/127 takes precedence)}
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H01H31/127 4 {Drop-out fuses}
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H01H31/14 1 with bridging contact that is not electrically connected to either line contact in open position of switch
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H01H31/16 2 with angularly-movable bridging contact or contact-carrying member
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H01H31/18 3 actuated through the movement of one or more insulators
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H01H31/20 4 at least one insulator being rotatable about its own geometrical axis
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H01H31/22 3 wherein the contact or contacts are rectilinearly movable with respect to the carrying member
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H01H31/24 2 with rectilinearly-movable bridging contact
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H01H31/26 1 with movable contact that remains electrically connected to one line in open position of switch
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H01H31/28 2 with angularly-movable contact
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H01H31/283 3 {wherein the contact or contacts are rectilinearly movable with respect to the carrying member}
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H01H2031/286 3 {wherein the contact is rotatable around its own longitudinal axis}
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H01H31/30 3 actuated through the movement of one or more insulators
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H01H31/32 2 with rectilinearly-movable contact
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H01H31/34 1 with movable contact adapted to engage an overhead transmission line, e.g. for branching
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H01H31/36 2 Contact moved by pantograph
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H01H33/00 0 High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
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H01H33/002 1 {Very heavy-current switches (H01H33/02 - H01H33/98 take precedence)}
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H01H33/004 2 {making use of superconducting contacts (current limitation using superconducting elements H02H9/023; power cryotrons H10N60/355)}
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H01H33/006 1 {adapted for interrupting fault currents with delayed zero crossings}
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H01H33/008 1 {Pedestal mounted switch gear combinations}
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H01H33/02 1 Details
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H01H33/021 2 {Use of solid insulating compounds resistant to the contacting fluid dielectrics and their decomposition products, e.g. to SF6}
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H01H33/022 2 {particular to three-phase circuit breakers (synchronous switching H01H9/563)}
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H01H2033/024 3 {with a triangular setup of circuit breakers}
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H01H33/025 2 {Terminal arrangements (for vacuum switches H01H33/6606)}
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H01H33/027 2 {Integrated apparatus for measuring current or voltage}
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H01H2033/028 2 {the cooperating contacts being both actuated simultaneously in opposite directions}
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H01H33/04 2 Means for extinguishing or preventing arc between current-carrying parts
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H01H33/045 3 {for arcs formed during closing}
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H01H33/06 3 Insulating body insertable between contacts
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H01H33/08 3 Stationary parts for restricting or subdividing the arc, e.g. barrier plate
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H01H2033/085 4 {using a flat arc chute, the width of arc chamber being only slightly greater then thickness of switch blade}
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H01H33/10 4 Metal parts
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H01H33/12 3 Auxiliary contacts on to which the arc is transferred from the main contacts (using arcing horns H01H33/20)
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H01H33/121 4 {Load break switches}
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H01H33/122 5 {both breaker and sectionaliser being enclosed, e.g. in SF6-filled container}
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H01H33/123 5 {in which the auxiliary contact pivots on the main contact-arm and performs a delayed and accelerated movement}
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H01H33/124 6 {the auxiliary contact being a whip contact}
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H01H33/125 5 {comprising a separate circuit breaker (H01H33/122 takes precedence)}
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H01H33/126 6 {being operated by the distal end of a sectionalising contact arm}
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H01H33/127 6 {movable with a sectionalising contact arm and operated by such movement}
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H01H33/128 6 {being operated by a separate mechanism interlocked with the sectionalising mechanism}
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H01H33/14 3 Multiple main contacts for the purpose of dividing the current through, or potential drop along, the arc
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H01H33/143 4 {of different construction or type}
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H01H2033/146 4 {using capacitors, e.g. for the voltage division over the different switches}
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H01H33/16 3 Impedances connected with contacts
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H01H33/161 4 {Variable impedances}
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H01H33/162 5 {Liquid resistors}
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H01H2033/163 5 {using PTC elements}
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H01H33/164 4 {the impedance being inserted in the circuit by blowing the arc onto an auxiliary electrode}
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H01H33/165 4 {Details concerning the impedances (H01H33/161 takes precedence)}
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H01H33/166 4 {the impedance being inserted only while closing the switch}
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H01H33/167 4 {the impedance being inserted only while opening the switch}
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H01H33/168 4 {the impedance being inserted both while closing and while opening the switch}
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H01H33/18 3 using blow-out magnet {(for vacuum switches H01H33/664)}
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H01H33/182 4 {using permanent magnets (H01H33/187 takes precedence)}
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H01H33/185 4 {using magnetisable elements associated with the contacts (H01H33/187 takes precedence)}
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H01H33/187 4 {comprising a hollow annular arc runner and a central contact between which a radially drawn arc rotates}
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H01H33/20 3 using arcing horns (using blow-out magnet H01H33/18)
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H01H33/22 3 Selection of fluids for arc-extinguishing
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H01H33/24 2 Means for preventing discharge to non-current-carrying parts, e.g. using corona ring
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H01H33/245 3 {using movable field electrodes}
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H01H33/26 2 Means for detecting the presence of an arc or other discharge
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H01H33/28 2 Power arrangements internal to the switch for operating the driving mechanism
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H01H33/285 3 {using electro-dynamic repulsion (assisting the movement of pistons by accelerating coil H01H33/882)}
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H01H33/30 3 using fluid actuator
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H01H33/302 4 {for fluid insulated switchgear, wherein the insulating fluid is also the working fluid}
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H01H33/304 4 {Working fluid supplies}
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H01H2033/306 4 {monitoring the pressure of the working fluid, e.g. for protection measures}
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H01H2033/308 4 {comprising control and pilot valves}
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H01H33/32 4 pneumatic
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H01H33/34 4 hydraulic
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H01H33/36 3 using dynamo-electric motor
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H01H33/38 3 using electromagnet
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H01H33/40 3 using spring motor
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H01H33/42 2 Driving mechanisms
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H01H33/423 3 {making use of an electromagnetic wave communication}
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H01H2033/426 3 {Details concerning the connection of the isolating driving rod to a metallic part}
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H01H33/44 2 Devices for ensuring operation of the switch at a predetermined point in the ac cycle (circuit arrangements H01H33/59)
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H01H33/46 2 Interlocking mechanisms
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H01H33/48 3 for interlocking between casing or cover and mechanism for operating contacts
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H01H33/50 3 for interlocking two or more parts of the mechanism for operating contacts
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H01H33/52 3 for interlocking two or more switches
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H01H33/53 2 Cases (for switchgear H02B1/26); Reservoirs, tanks, piping or valves, for arc-extinguishing fluid; Accessories therefor, e.g. safety arrangements, pressure relief devices
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H01H33/55 3 Oil reservoirs or tanks; Lowering means therefor (associated with withdrawal mechanism for isolation of switch H02B11/08)
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H01H33/555 4 {Protective arrangements responsive to abnormal fluid pressure, liquid level or liquid displacement, e.g. Buchholz relays (circuits H02H5/08; specially adapted for transformers H01F27/402)}
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H01H33/56 3 Gas reservoirs
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H01H33/561 4 {composed of different independent pressurised compartments put in communication only after their assemblage}
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H01H33/562 4 {Means for avoiding liquefaction or for disposing of liquefaction products}
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H01H33/563 4 {comprising means for monitoring the density of the insulating gas}
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H01H33/565 4 {Gas-tight sealings for moving parts penetrating into the reservoir}
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H01H2033/566 4 {Avoiding the use of SF6}
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H01H2033/567 4 {Detection of decomposition products of the gas}
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H01H2033/568 4 {with overpressure release, e.g. rupture membranes}
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H01H33/57 3 Recuperation of liquid or gas
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H01H33/58 3 Silencers for suppressing noise of switch operation
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H01H33/59 2 Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the ac cycle
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H01H33/593 3 {for ensuring operation of the switch at a predetermined point of the ac cycle (for multipolar switches H01H9/563)}
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H01H33/596 3 {for interrupting dc}
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H01H33/60 1 Switches wherein the means for extinguishing or preventing the arc do not include separate means for obtaining or increasing flow of arc-extinguishing fluid
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H01H33/64 2 wherein the break is in gas (vacuum switches H01H33/66)
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H01H33/65 3 wherein the break is in air at atmospheric pressure, e.g. in open air
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H01H33/66 2 Vacuum switches
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H01H33/6606 3 {Terminal arrangements}
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H01H2033/6613 4 {Cooling arrangements directly associated with the terminal arrangements}
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H01H33/662 3 Housings or protective screens
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H01H33/66207 4 {Specific housing details, e.g. sealing, soldering or brazing}
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H01H2033/66215 5 {Details relating to the soldering or brazing of vacuum switch housings}
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H01H2033/66223 5 {Details relating to the sealing of vacuum switch housings}
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H01H2033/6623 5 {Details relating to the encasing or the outside layers of the vacuum switch housings}
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H01H33/66238 4 {Specific bellows details}
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H01H2033/66246 5 {Details relating to the guiding of the contact rod in vacuum switch belows}
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H01H2033/66253 5 {Details relating to the prevention of unwanted rotation of the contact rod in vacuum switch bellows}
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H01H33/66261 4 {Specific screen details, e.g. mounting, materials, multiple screens or specific electrical field considerations}
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H01H2033/66269 5 {Details relating to the materials used for screens in vacuum switches}
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H01H2033/66276 5 {Details relating to the mounting of screens in vacuum switches}
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H01H2033/66284 5 {Details relating to the electrical field properties of screens in vacuum switches}
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H01H2033/66292 5 {Details relating to the use of multiple screens in vacuum switches}
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H01H33/664 3 Contacts; Arc-extinguishing means, e.g. arcing rings
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H01H33/6641 4 {making use of a separate coil}
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H01H33/6642 4 {having cup-shaped contacts, the cylindrical wall of which being provided with inclined slits to form a coil}
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H01H33/6643 4 {having disc-shaped contacts subdivided in petal-like segments, e.g. by helical grooves}
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H01H33/6644 4 {having coil-like electrical connections between contact rod and the proper contact}
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H01H33/6645 5 {in which the coil like electrical connections encircle at least once the contact rod}
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H01H33/6646 4 {having non flat disc-like contact surface}
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H01H33/6647 4 {having fixed middle contact and two movable contacts}
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H01H2033/6648 4 {Contacts containing flexible parts, e.g. to improve contact pressure}
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H01H33/666 3 Operating arrangements
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H01H33/6661 4 {Combination with other type of switch, e.g. for load break switches (H01H33/143, H01H33/6662 take precedence)}
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H01H33/6662 4 {using bistable electromagnetic actuators, e.g. linear polarised electromagnetic actuators}
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H01H33/6664 4 {with pivoting movable contact structure}
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H01H2033/6665 4 {Details concerning the mounting or supporting of the individual vacuum bottles}
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H01H2033/6667 4 {Details concerning lever type driving rod arrangements}
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H01H2033/6668 4 {with a plurality of interruptible circuit paths in single vacuum chamber}
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H01H33/668 3 Means for obtaining or monitoring the vacuum
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H01H33/6683 4 {by gettering}
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H01H2033/6686 4 {by emitting and receiving reflected sound or ultrasound signals}
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H01H33/68 2 Liquid-break switches, e.g. oil-break
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H01H33/70 1 Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid
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H01H33/7007 2 {wherein the flow is a function of the current being interrupted}
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H01H33/7015 2 {characterised by flow directing elements associated with contacts (electrical or mechanical properties of the contact system H01H1/385)}
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H01H33/7023 3 {characterised by an insulating tubular gas flow enhancing nozzle (H01H33/7038 takes precedence)}
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H01H33/703 4 {having special gas flow directing elements, e.g. grooves, extensions}
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H01H33/7038 3 {characterised by a conducting tubular gas flow enhancing nozzle}
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H01H33/7046 4 {having special gas flow directing elements, e.g. grooves, extensions (H01H33/7053 takes precedence)}
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H01H33/7053 4 {having a bridging element around two hollow tubular contacts}
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H01H33/7061 3 {characterised by use of special mounting means (H01H33/7023 - H01H33/7038 take precedence)}
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H01H33/7069 3 {characterised by special dielectric or insulating properties or by special electric or magnetic field control properties (H01H33/7023 - H01H33/7061 take precedence)}
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H01H33/7076 3 {characterised by the use of special materials (H01H33/7023 - H01H33/7069 take precedence)}
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H01H33/7084 3 {characterised by movable parts influencing the gas flow (H01H33/7023 - H01H33/7076 take precedence)}
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H01H33/7092 3 {characterised by several arcing chambers in series (H01H33/7023 - H01H33/7084 take precedence)}
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H01H33/72 2 having stationary parts for directing the flow of arc-extinguishing fluid, e.g. arc-extinguishing chamber
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H01H33/73 3 wherein the break is in air at atmospheric pressure, e.g. in open air
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H01H33/74 3 wherein the break is in gas (in air at atmospheric pressure H01H33/73)
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H01H33/75 3 Liquid-break switches, e.g. oil-break
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H01H33/76 2 wherein arc-extinguishing gas is evolved from stationary parts; Selection of material therefor
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H01H33/765 3 {the gas-evolving material being incorporated in the contact material}
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H01H33/77 3 wherein the break is in air at atmospheric pressure
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H01H33/78 3 wherein the break is in gas (in air at atmospheric pressure H01H33/77)
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H01H33/80 2 flow of arc-extinguishing fluid from a pressure source being controlled by a valve
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H01H33/82 3 the fluid being air or gas
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H01H33/83 4 wherein the contacts are opened by the flow of air or gas
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H01H33/84 3 the fluid being liquid, e.g. oil
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H01H33/85 4 wherein the contacts are opened by the flow of liquid
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H01H33/86 2 the flow of arc-extinguishing fluid under pressure from the contact space being controlled by a valve
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H01H33/88 2 the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts
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H01H33/882 3 {the movement being assisted by accelerating coils}
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H01H33/884 3 {with variable-area piston}
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H01H33/886 3 {by movement of rotating pistons}
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H01H2033/888 3 {Deflection of hot gasses and arcing products}
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H01H33/90 3 this movement being effected by or in conjunction with the contact-operating mechanism
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H01H33/901 4 {making use of the energy of the arc or an auxiliary arc}
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H01H2033/902 5 {with the gases from hot space and compression volume following different paths to arc space or nozzle, i.e. the compressed gases do not pass through hot volume}
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H01H33/903 5 {and assisting the operating mechanism}
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H01H33/904 4 {characterised by the transmission between operating mechanism and piston or movable contact}
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H01H33/905 4 {the compression volume being formed by a movable cylinder and a semi-mobile piston}
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H01H2033/906 4 {with pressure limitation in the compression volume, e.g. by valves or bleeder openings}
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H01H2033/907 4 {using tandem pistons, e.g. several compression volumes being modified in conjunction or sequential}
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H01H2033/908 4 {using valves for regulating communication between, e.g. arc space, hot volume, compression volume, surrounding volume}
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H01H33/91 4 the arc-extinguishing fluid being air or gas
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H01H2033/912 5 {Liquified gases, e.g. liquified SF6}
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H01H33/92 4 the arc-extinguishing fluid being liquid, e.g. oil
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H01H33/94 3 this movement being effected solely due to the pressure caused by the arc itself or by an auxiliary arc {(H01H33/903 takes precedence)}
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H01H33/95 4 the arc-extinguishing fluid being air or gas
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H01H33/96 4 the arc-extinguishing fluid being liquid, e.g. oil
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H01H33/98 2 the flow of arc-extinguishing fluid being initiated by an auxiliary arc or a section of the arc, without any moving parts for producing or increasing the flow {(H01H33/901 takes precedence)}
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H01H33/982 3 {in which the pressure-generating arc is rotated by a magnetic field}
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H01H35/00 0 Switches operated by change of a physical condition (operated by change of magnetic or electric field H01H36/00; thermally-actuated switches H01H37/00)
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H01H35/003 1 {Switches operated by other part of human body than hands (push-button switches H01H13/16; slide switches H01H15/20; cord switches H01H17/10; other switches H01H19/16 and H01H21/26)}
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H01H35/006 1 {Switches operated by mechanical overload condition, e.g. transmitted force or torque becoming too high}
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H01H35/02 1 Switches operated by change of position, inclination or orientation of the switch itself in relation to gravitational field (tilting mercury container H01H29/20; change of position due to change of liquid level H01H35/18)
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H01H35/022 2 {the switch being of the reed switch type}
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H01H35/025 2 {the switch being discriminative in different directions}
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H01H35/027 2 {the inertia mass activating the switch mechanically, e.g. through a lever}
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H01H35/06 1 Switches operated by change of speed (operated by change of fluid flow H01H35/24)
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H01H35/10 2 Centrifugal switches (level of mercury displaced by centrifugal action H01H29/26)
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H01H35/12 2 operated by reversal of direction of movement
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H01H35/14 1 Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch {(wherein the liquid constitutes a contact of the switch H01H29/002)}
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H01H35/141 2 {Details}
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H01H35/142 3 {Damping means to avoid unwanted response}
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H01H35/143 3 {Resetting means}
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H01H35/144 2 {operated by vibration}
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H01H35/145 2 {operated by a particular acceleration-time function}
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H01H35/146 2 {operated by plastic deformation or rupture of structurally associated elements}
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H01H35/147 2 {the switch being of the reed switch type}
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H01H35/148 2 {making use of a rolamite sensor}
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H01H35/18 1 Switches operated by change of liquid level or of liquid density, e.g. float switch (by magnet carried on a float H01H36/02)
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H01H35/183 2 {making use of a thermal switch}
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H01H35/186 2 {making use of a cable suspended floater containing an inclination sensing switch}
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H01H35/24 1 Switches operated by change of fluid pressure, by fluid pressure waves, or by change of fluid flow (wherein the change of pressure is caused by change of temperature H01H37/36)
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H01H35/242 2 {operated by one particular pressure-time function}
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H01H35/245 2 {actuated by the deformation of a body of elastic material}
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H01H35/247 2 {the switch being of the reed switch type}
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H01H35/26 2 Details
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H01H35/2607 3 {Means for adjustment of "ON" or "OFF" operating pressure (means for adjustment of "ON" or "OFF" operating temperature of thermally actuated switches by varying bias on the thermal element due to a separate spring H01H37/18)}
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H01H35/2614 4 {by varying the bias on the pressure sensitive element}
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H01H35/2621 5 {the bias being magnetic}
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H01H35/2628 4 {by varying the relative position of switch-casing and pressure sensitive element}
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H01H35/2635 4 {by adjustment of a motion transmitting system}
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H01H35/2642 5 {comprising a lost-motion connection}
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H01H35/265 4 {by adjustment of one of the co-operating contacts}
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H01H35/2657 3 {with different switches operated at substantially different pressures}
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H01H35/2664 4 {making use of a balance plate pivoting about different axes}
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H01H35/2671 3 {Means to detect leaks in the pressure sensitive element}
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H01H35/2678 3 {Means to isolate oscillating component of pressure}
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H01H35/2685 3 {Means to protect pressure sensitive element against over pressure}
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H01H35/2692 3 {comprising pneumatic snap-action}
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H01H35/28 3 Compensation for variation of ambient pressure or temperature
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H01H35/30 3 Means for transmitting pressure to pressure-responsive operating part, e.g. by capsule and capillary tube
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H01H35/32 2 actuated by bellows
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H01H35/34 2 actuated by diaphragm
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H01H35/343 3 {by snap acting diaphragm}
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H01H35/346 3 {in which the movable contact is formed or directly supported by the diaphragm}
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H01H35/36 2 actuated by curled flexible tube, e.g. Bourdon tube
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H01H35/38 2 actuated by piston and cylinder
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H01H35/40 2 actuated by devices allowing continual flow of fluid, e.g. vane
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H01H35/405 3 {the switch being of the reed switch type}
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H01H35/42 1 Switches operated by change of humidity
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H01H36/00 0 Switches actuated by change of magnetic field or of electric field, e.g. by change of relative position of magnet and switch, by shielding
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H01H36/0006 1 {Permanent magnet actuating reed switches (H01H35/147 takes precedence)}
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H01H36/0013 2 {characterised by the co-operation between reed switch and permanent magnet; Magnetic circuits}
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H01H36/002 3 {Actuation by moving ferromagnetic material, switch and magnet being fixed}
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H01H36/0026 3 {comprising a biasing, helping or polarising magnet}
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H01H36/0033 2 {Mountings; Housings; Connections}
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H01H36/004 2 {push-button-operated, e.g. for keyboards}
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H01H36/0046 2 {Limit switches, also fail-safe operation or anti-tamper considerations}
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H01H36/0053 2 {periodically operated}
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H01H36/006 2 {comprising a plurality of reed switches, e.g. selectors or joystick-operated}
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H01H36/0066 2 {magnet being removable, e.g. part of key pencil}
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H01H36/0073 1 {actuated by relative movement between two magnets}
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H01H36/008 1 {Change of magnetic field wherein the magnet and switch are fixed, e.g. by shielding or relative movements of armature (for reed switches H01H36/002)}
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H01H2036/0086 1 {Movable or fixed contacts formed by permanent magnets}
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H01H2036/0093 1 {Micromechanical switches actuated by a change of the magnetic field}
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H01H36/02 1 actuated by movement of a float carrying a magnet
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H01H37/00 0 Thermally-actuated switches
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H01H37/002 1 {combined with protective means}
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H01H37/004 1 {with thermal image}
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H01H37/006 1 {with different switches operated at substantially different temperatures}
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H01H2037/008 1 {Micromechanical switches operated thermally}
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H01H37/02 1 Details
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H01H37/04 2 Bases; Housings; Mountings {(H01H37/5427 takes precedence)}
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H01H37/043 3 {Mountings on controlled apparatus}
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H01H2037/046 3 {being soldered on the printed circuit to be protected}
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H01H37/06 3 to facilitate replacement, e.g. cartridge housing
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H01H37/08 2 Indicators; Distinguishing marks
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H01H37/10 2 Compensation for variation of ambient temperature or pressure
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H01H37/12 2 Means for adjustment of "on" or "off" operating temperature
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H01H37/14 3 by anticipatory electric heater
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H01H37/16 3 by varying the proportion of input heat received by the thermal element, e.g. by displacement of a shield
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H01H37/18 3 by varying bias on the thermal element due to a separate spring
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H01H37/20 3 by varying the position of the thermal element in relation to switch base or casing
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H01H37/22 3 by adjustment of a member transmitting motion from the thermal element to contacts or latch
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H01H37/24 3 by adjustment of position of the movable contact on its driving member
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H01H37/26 3 by adjustment of abutment for "off" position of the movable contact
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H01H37/28 3 by adjustment of the position of the fixed contact
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H01H37/30 3 by varying the position of the contact unit in relation to switch base or casing
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H01H37/32 2 Thermally-sensitive members
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H01H37/323 3 {making use of shape memory materials (in thermal relays H01H61/0107; release mechanism H01H71/145; treatment of SMF alloys C22F1/006; for control of temperature G05D23/024)}
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H01H2037/326 3 {with radiative heat transfer to the switch, e.g. special absorption surfaces}
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H01H37/34 3 Means for transmitting heat thereto, e.g. capsule remote from contact member
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H01H37/36 3 actuated due to expansion or contraction of a fluid with or without vaporisation (the fluid forming a contact of the switch H01H29/04, H01H29/30)
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H01H37/38 4 with bellows
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H01H37/40 4 with diaphragm
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H01H37/42 4 with curled flexible tube, e.g. Bourdon tube
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H01H37/44 4 with piston and cylinder
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H01H37/46 3 actuated due to expansion or contraction of a solid (deflection of a bimetallic element H01H37/52)
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H01H37/48 4 with extensible rigid rods or tubes
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H01H37/50 4 with extensible wires under tension
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H01H37/52 3 actuated due to deflection of bimetallic element
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H01H37/521 4 {comprising a plurality of bimetals acting in the same direction}
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H01H2037/523 4 {using a corrugated bimetal}
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H01H2037/525 4 {Details of manufacturing of the bimetals, e.g. connection to non bimetallic elements or insulating coatings}
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H01H2037/526 4 {Materials for bimetals}
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H01H2037/528 4 {the bimetallic element being composed of more than two layers}
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H01H37/54 4 wherein the bimetallic element is inherently snap acting
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H01H37/5409 5 {Bistable switches; Resetting means}
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H01H37/5418 5 {using cantilevered bimetallic snap elements}
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H01H37/5427 5 {encapsulated in sealed miniaturised housing}
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H01H37/5436 6 {mounted on controlled apparatus}
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H01H2037/5445 5 {with measures for avoiding slow break of contacts during the creep phase of the snap bimetal}
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H01H2037/5454 5 {with separate spring biasing the bimetal snap element against the heat transfer surface}
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H01H2037/5463 5 {the bimetallic snap element forming part of switched circuit}
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H01H2037/5472 5 {having an omega form, e.g. the bimetallic snap element having a ring shape with a central tongue}
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H01H2037/5481 5 {the bimetallic snap element being mounted on the contact spring}
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H01H2037/549 5 {Details of movement transmission between bimetallic snap element and contact}
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H01H37/56 4 having spirally wound or helically wound bimetallic element
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H01H37/58 3 actuated due to thermally controlled change of magnetic permeability
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H01H37/585 4 {the switch being of the reed switch type}
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H01H37/60 2 Means for producing snap action (inherent in bimetallic element H01H37/54; caused by a magnet H01H37/66)
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H01H37/62 2 Means other than thermal means for introducing a predetermined time delay
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H01H37/64 2 Contacts
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H01H37/66 3 Magnetic reinforcement of contact pressure; Magnet causing snap action
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H01H37/68 3 sealed in evacuated or gas-filled tube
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H01H37/70 3 Resetting means {(H01H37/5409 takes precedence)}
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H01H2037/705 4 {wherein the switch cannot be closed when the temperature is above a certain value}
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H01H37/72 1 Switches in which the opening movement and the closing movement of a contact are effected respectively by heating and cooling or vice versa
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H01H37/74 1 Switches in which only the opening movement or only the closing movement of a contact is effected by heating or cooling
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H01H37/76 2 Contact member actuated by melting of fusible material, actuated due to burning of combustible material or due to explosion of explosive material
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H01H37/761 3 {with a fusible element forming part of the switched circuit (H01H37/767 takes precedence)}
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H01H2037/762 4 {using a spring for opening the circuit when the fusible element melts}
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H01H2037/763 5 {the spring being a blade spring}
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H01H37/764 3 {in which contacts are held closed by a thermal pellet}
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H01H37/765 4 {using a sliding contact between a metallic cylindrical housing and a central electrode}
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H01H37/766 4 {using a bridging contact}
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H01H37/767 3 {Normally open}
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H01H2037/768 3 {characterised by the composition of the fusible material}
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H01H2037/769 3 {characterised by the composition of insulating fusible materials, e.g. for use in the thermal pellets}
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H01H39/00 0 Switching devices actuated by an explosion produced within the device and initiated by an electric current
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H01H39/002 1 {provided with a cartridge-magazine}
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H01H39/004 1 {Closing switches}
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H01H39/006 1 {Opening by severing a conductor}
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H01H2039/008 1 {using the switch for a battery cutoff}
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H01H41/00 0 Switches providing a selected number of consecutive operations of the contacts by a single manual actuation of the operating part
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H01H41/04 1 Switches without means for setting or mechanically storing a multidigit number
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H01H41/06 2 dial or slide operated
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H01H41/08 2 keyboard operated
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H01H41/10 1 Switches with means for setting or mechanically storing a multidigit number
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H01H41/12 2 dial or slide operated
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H01H41/14 2 keyboard operated
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H01H43/00 0 Time or time-programme switches providing a choice of time-intervals for executing one or more switching actions and automatically terminating their operations after the programme is completed
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H01H43/005 1 {with timing of the actuation of contacts due to a part rotating at variable speed}
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H01H43/02 1 Details
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H01H43/022 2 {Bases; Housings; Mountings}
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H01H43/024 2 {Terminal arrangements}
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H01H43/026 2 {Contact arrangements}
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H01H43/028 2 {Means for manually actuating the contacts or interfering with the cooperation between timer mechanism and contacts}
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H01H43/04 2 Means for time setting
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H01H43/06 3 comprising separately adjustable parts for each programme step, e.g. with tappets
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H01H43/065 4 {using cams or discs supporting a plurality of individually programmable elements (Schaltreiter)}
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H01H43/08 3 comprising an interchangeable programme part which is common for all programme steps, e.g. with a punched card
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H01H43/10 1 with timing of actuation of contacts due to a part rotating at substantially constant speed
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H01H43/101 2 {Driving mechanisms}
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H01H43/102 3 {using a pawl and ratchet wheel mechanism}
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H01H43/103 2 {stopping automatically after one preselected time interval}
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H01H43/104 3 {by mechanical coupling device}
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H01H43/105 3 {by electromechanical coupling device}
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H01H43/106 2 {Manual programme selecting means}
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H01H2043/107 3 {Bidirectional selecting means, e.g. the program selecting knob being turnable in both directions}
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H01H2043/108 2 {where at least some contacts of electromechanical timer give instructions to electronic timer and/or the timing motor is under control of electronic timer, e.g. hybrid timer}
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H01H43/12 2 stopping automatically after a single cycle of operation
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H01H43/121 3 {using a drum}
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H01H43/122 4 {with provision for adjustment of the intervals by a non-rotating member}
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H01H43/124 3 {using a disc}
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H01H43/125 3 {using a cam}
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H01H43/127 4 {with provision for adjustment of the intervals by means carried by the cam}
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H01H43/128 4 {with provision for adjustment of the intervals by a non-rotating member}
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H01H43/14 3 wherein repetition of operation necessitates resetting of time intervals
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H01H43/16 2 stopping automatically after a predetermined plurality of cycles of operation
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H01H43/24 1 with timing of actuation of contacts due to a non-rotatable moving part
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H01H43/26 2 the actuation being produced by a substance flowing due to gravity, e.g. sand, water
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H01H43/28 2 the actuation being produced by a part, the speed of which is controlled by fluid-pressure means, e.g. by piston and cylinder
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H01H43/285 3 {adjusting the time interval by means of an adjustable orifice, e.g. needle valve}
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H01H43/30 1 with timing of actuation of contacts due to thermal action
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H01H43/301 2 {based on the expansion or contraction of a material (thermometers based on the expansion or contraction of a material G01K5/00)}
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H01H43/302 3 {of solid bodies}
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H01H43/303 4 {of one single solid body, e.g. hot wire}
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H01H43/304 4 {of two bodies expanding or contracting in a different manner, e.g. bimetallic elements}
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H01H43/305 5 {actuating the contacts by commanding a mechanical device, e.g. thermal motor}
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H01H43/306 3 {of liquids}
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H01H43/307 3 {of gases}
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H01H43/308 2 {based on the change of electrical properties, e.g. thermistors (thermometers based on the use of electric or magnetic elements directly sensitive to heat G01K7/00)}
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H01H43/309 2 {based on the change of magnetic properties (thermometers based on the use of electric or magnetic elements directly sensitive to heat G01K7/00)}
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H01H43/32 1 with timing of actuation of contacts due to electrolytic processes; with timing of actuation of contacts due to chemical processes
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H01H43/322 2 {Electrolytic decomposition of liquids, e.g. actuation of contacts due to action of the products of reaction}
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H01H43/325 2 {Electrolytic decomposition of solid bodies, e.g. action by rupture}
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H01H43/327 2 {acting by coulometric transfer of material}
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H01H45/00 0 Details of relays (electric circuit arrangements H01H47/00; of electromagnetic relays H01H50/00; details of electrically-operated selector switches H01H63/00)
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H01H45/02 1 Bases; Casings; Covers (frames for mounting two or more relays or for mounting a relay and another electric component H02B1/01, H04Q1/08, H05K)
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H01H45/04 2 Mounting complete relay or separate parts of relay on a base or inside a case
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H01H45/06 2 having windows; Transparent cases or covers
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H01H45/08 1 Indicators; Distinguishing marks
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H01H45/10 1 Electromagnetic or electrostatic shielding (casings H01H45/02)
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H01H45/12 1 Ventilating; Cooling; Heating (for operating electrothermal relays H01H61/013)
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H01H45/14 1 Terminal arrangements
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H01H47/00 0 Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
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H01H47/001 1 {Functional circuits, e.g. logic, sequencing, interlocking circuits}
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H01H47/002 1 {Monitoring or fail-safe circuits}
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H01H2047/003 2 {Detecting welded contacts and applying weld break pulses to coil}
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H01H47/004 2 {using plural redundant serial connected relay operated contacts in controlled circuit}
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H01H47/005 3 {Safety control circuits therefor, e.g. chain of relays mutually monitoring each other}
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H01H2047/006 2 {Detecting unwanted movement of contacts and applying pulses to coil for restoring to normal status}
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H01H47/007 1 {with galvanic isolation between controlling and controlled circuit, e.g. transformer relay}
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H01H2047/008 1 {with a drop in current upon closure of armature or change of inductance}
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H01H2047/009 1 {with self learning features, e.g. measuring the attracting current for a relay and memorising it}
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H01H47/02 1 for modifying the operation of the relay
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H01H2047/025 2 {with taking into account of the thermal influences, e.g. change in resistivity of the coil or being adapted to high temperatures}
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H01H47/04 2 for holding armature in attracted position, e.g. when initial energising circuit is interrupted; for maintaining armature in attracted position, e.g. with reduced energising current {(with switching regulator H01H47/325)}
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H01H47/043 3 {making use of an energy accumulator (for bistable relays H01H47/226)}
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H01H2047/046 3 {with measuring of the magnetic field, e.g. of the magnetic flux, for the control of coil current}
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H01H47/06 3 by changing number of serially-connected turns or windings
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H01H47/08 3 by changing number of parallel-connected turns or windings
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H01H47/10 3 by switching-in or -out impedance external to the relay winding
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H01H47/12 2 for biasing the electromagnet
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H01H47/14 2 for differential operation of the relay
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H01H47/16 2 for conjoint, e.g. additive, operation of the relay
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H01H47/18 2 for introducing delay in the operation of the relay (short-circuited conducting sleeves, bands or discs H01H50/46)
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H01H47/20 2 for producing frequency-selective operation of the relay
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H01H47/22 1 for supplying energising current for relay coil
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H01H47/223 2 {adapted to be supplied by AC}
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H01H47/226 2 {for bistable relays}
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H01H47/24 2 having light-sensitive input
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H01H47/26 2 having thermo-sensitive input
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H01H47/28 2 Energising current supplied by discharge tube
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H01H47/30 3 by gas-filled discharge tube
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H01H47/32 2 Energising current supplied by semiconductor device
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H01H47/325 3 {by switching regulator}
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H01H47/34 2 Energising current supplied by magnetic amplifier
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H01H47/36 2 Relay coil or coils forming part of a bridge circuit
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H01H49/00 0 Apparatus or processes specially adapted to the manufacture of relays or parts thereof
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H01H50/00 0 Details of electromagnetic relays ({H01H51/28 takes precedence;} electric circuit arrangements H01H47/00; details of electrically-operated selector switches H01H63/00)
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H01H50/002 1 {particular to three-phase electromagnetic relays (synchronous switching H01H9/563)}
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H01H50/005 1 {using micromechanics}
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H01H2050/007 2 {Relays of the polarised type, e.g. the MEMS relay beam having a preferential magnetisation direction}
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H01H50/02 1 Bases; Casings; Covers (frames for mounting two or more relays or for mounting a relay and another electric component H02B1/01, H04Q1/08, H05K)
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H01H50/021 2 {structurally combining a relay and an electronic component, e.g. varistor, RC circuit (auxiliary switch inserting resistor during closure H01H50/543)}
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H01H50/023 2 {Details concerning sealing, e.g. sealing casing with resin}
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H01H2050/025 3 {containing inert or dielectric gasses, e.g. SF6, for arc prevention or arc extinction}
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H01H50/026 2 {Details concerning isolation between driving and switching circuit}
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H01H2050/028 2 {Means to improve the overall withstanding voltage, e.g. creepage distances}
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H01H50/04 2 Mounting complete relay or separate parts of relay on a base or inside a case
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H01H50/041 3 {Details concerning assembly of relays}
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H01H50/042 4 {Different parts are assembled by insertion without extra mounting facilities like screws, in an isolated mounting part, e.g. stack mounting on a coil-support}
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H01H50/043 4 {Details particular to miniaturised relays (H01H50/042 takes precedence)}
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H01H2050/044 5 {Special measures to minimise the height of the relay}
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H01H50/045 4 {Details particular to contactors (H01H50/042 takes precedence)}
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H01H2050/046 4 {Assembling parts of a relay by using snap mounting techniques}
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H01H50/047 3 {Details concerning mounting a relays}
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H01H50/048 4 {Plug-in mounting or sockets}
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H01H2050/049 3 {Assembling or mounting multiple relays in one common housing}
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H01H50/06 2 having windows; Transparent cases or covers
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H01H50/08 1 Indicators; Distinguishing marks
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H01H50/10 1 Electromagnetic or electrostatic shielding (casings H01H50/02)
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H01H50/12 1 Ventilating; Cooling; Heating (for operating electrothermal relays H01H61/013)
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H01H50/14 1 Terminal arrangements {(for coils H01H50/443)}
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H01H50/16 1 Magnetic circuit arrangements
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H01H50/163 2 {Details concerning air-gaps, e.g. anti-remanence, damping, anti-corrosion}
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H01H2050/166 2 {wherein the magnetic circuit parts are molded in a magnetic plastic material}
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H01H50/18 2 Movable parts of magnetic circuits, e.g. armature
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H01H50/20 3 movable inside coil and substantially lengthwise with respect to axis thereof; movable coaxially with respect to coil
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H01H50/22 4 wherein the magnetic circuit is substantially closed
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H01H2050/225 5 {with yoke and armature formed by identical stacked laminates, e.g. punched in one and the same tool}
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H01H50/24 3 Parts rotatable or rockable outside coil
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H01H50/26 4 Parts movable about a knife edge
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H01H50/28 4 Parts movable due to bending of a blade spring or reed
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H01H50/30 3 Mechanical arrangements for preventing or damping vibration or shock, e.g. by balancing of armature
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H01H50/305 4 {damping vibration due to functional movement of armature (in air-gap H01H50/163)}
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H01H50/32 3 Latching movable parts mechanically
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H01H50/321 4 {the mechanical latch being controlled directly by the magnetic flux or part of it}
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H01H50/323 4 {for interlocking two or more relays}
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H01H2050/325 5 {Combined electrical and mechanical interlocking, e.g. usually for auxiliary contacts}
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H01H50/326 4 {with manual intervention, e.g. for testing, resetting or mode selection}
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H01H2050/328 5 {with manual locking means having three positions, e.g. on-off-automatic}
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H01H50/34 3 Means for adjusting limits of movement; Mechanical means for adjusting returning force
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H01H50/36 2 Stationary parts of magnetic circuit, e.g. yoke
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H01H2050/362 3 {Part of the magnetic circuit conducts current to be switched or coil current, e.g. connector and magnetic circuit formed of one single part}
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H01H2050/365 3 {formed from a single sheet of magnetic material by punching, bending, plying}
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H01H2050/367 3 {Methods for joining separate core and L-shaped yoke}
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H01H50/38 3 Part of main magnetic circuit shaped to suppress arcing between the contacts of the relay
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H01H50/40 3 Branched or multiple-limb main magnetic circuits
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H01H50/42 3 Auxiliary magnetic circuits, e.g. for maintaining armature in, or returning armature to, position of rest, for damping or accelerating movement
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H01H50/44 1 Magnetic coils or windings
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H01H50/443 2 {Connections to coils}
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H01H2050/446 2 {Details of the insulating support of the coil, e.g. spool, bobbin, former}
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H01H50/46 2 Short-circuited conducting sleeves, bands, or discs {(for electromagnets H01F7/1205)}
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H01H50/54 1 Contact arrangements
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H01H50/541 2 {Auxiliary contact devices}
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H01H50/543 3 {Auxiliary switch inserting resistor during closure of contactor}
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H01H50/545 3 {Self-contained, easily replaceable microswitches}
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H01H50/546 2 {for contactors having bridging contacts}
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H01H50/548 2 {for miniaturised relays}
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H01H50/56 2 Contact spring sets
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H01H50/58 3 Driving arrangements structurally associated therewith; Mounting of driving arrangements on armature
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H01H50/60 2 moving contact being rigidly combined with movable part of magnetic circuit {(for polarised relays H01H51/2254, H01H51/2281)}
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H01H50/62 2 Co-operating movable contacts operated by separate electrical actuating means
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H01H50/64 1 Driving arrangements between movable part of magnetic circuit and contact (structurally associated with contact spring sets H01H50/58)
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H01H50/641 2 {intermediate part performing a rectilinear movement (H01H50/645, H01H50/66 - H01H50/74 take precedence)}
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H01H50/642 3 {intermediate part being generally a slide plate, e.g. a card}
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H01H50/643 2 {intermediate part performing a rotating or pivoting movement (H01H50/645, H01H50/66 - H01H50/74 take precedence)}
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H01H50/644 3 {having more than one rotating or pivoting part}
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H01H50/645 2 {intermediate part making a resilient or flexible connection (H01H50/66 - H01H50/74 take precedence)}
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H01H50/646 3 {intermediate part being a blade spring}
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H01H50/647 2 {intermediate part comprising interlocking means for different contact pairs (H01H50/66 - H01H50/74 take precedence; for two separate relays H01H50/323; for ratchets H01H51/08)}
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H01H50/648 2 {intermediate part being rigidly combined with armature (H01H50/66 - H01H50/74 take precedence)}
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H01H50/66 2 with lost motion
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H01H50/68 2 with snap action
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H01H50/70 2 operating contact momentarily during stroke of armature
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H01H50/72 2 for mercury contact
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H01H50/74 2 Mechanical means for producing a desired natural frequency of operation of the contacts, e.g. for self-interrupter
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H01H50/76 3 using reed or blade spring
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H01H50/78 3 using diaphragm; using stretched wire or ribbon vibrating sideways
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H01H50/80 3 using torsionally-vibrating member, e.g. wire, strip
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H01H50/82 3 using spring-loaded pivoted inertia member
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H01H50/84 3 with means for adjustment of frequency or of make-to-break ratio
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H01H50/86 1 Means for introducing a predetermined time delay between the initiation of the switching operation and the opening or closing of the contacts (circuit arrangements for introducing delay H01H47/18; short-circuited conducting sleeves, bands, or discs H01H50/46)
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H01H50/88 2 Mechanical means, e.g. dash-pot
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H01H50/90 3 the delay effective in both directions of operation
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H01H50/92 2 Thermal means (inherent in electrothermal relays H01H61/00)
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H01H51/00 0 Electromagnetic relays (relays using the dynamo-electric effect H01H53/00)
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H01H51/005 1 {Inversing contactors (H01H50/323 takes precedence)}
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H01H51/01 1 Relays in which the armature is maintained in one position by a permanent magnet and freed by energisation of a coil producing an opposing magnetic field {(H01H51/02 - H01H51/26 take precedence)}
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H01H51/02 1 Non-polarised relays
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H01H51/04 2 with single armature; with single set of ganged armatures
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H01H51/06 3 Armature is movable between two limit positions of rest and is moved in one direction due to energisation of an electromagnet and after the electromagnet is de-energised is returned by energy stored during the movement in the first direction, e.g. by using a spring, by using a permanent magnet, by gravity
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H01H51/065 4 {Relays having a pair of normally open contacts rigidly fixed to a magnetic core movable along the axis of a solenoid, e.g. relays for starting automobiles (details H01H50/20)}
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H01H51/08 4 Contacts alternately opened and closed by successive cycles of energisation and de-energisation of the electromagnet, e.g. by use of a ratchet
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H01H51/082 5 {using rotating ratchet mechanism}
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H01H51/084 6 {with axial ratchet elements}
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H01H51/086 6 {with radial ratchet elements}
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H01H51/088 7 {moved alternately in opposite directions}
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H01H51/10 4 Contacts retained open or closed by a latch which is controlled by an electromagnet
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H01H51/12 3 Armature is movable between two limit positions of rest and is moved in both directions due to the energisation of one or the other of two electromagnets without the storage of energy to effect the return movement
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H01H51/14 4 without intermediate neutral position of rest
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H01H51/16 4 with intermediate neutral position of rest
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H01H51/18 3 Armature is rotatable through an unlimited number of revolutions
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H01H51/20 2 with two or more independent armatures
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H01H51/22 1 Polarised relays {(H01H51/284 takes precedence)}
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H01H51/2209 2 {with rectilinearly movable armature}
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H01H2051/2218 3 {having at least one movable permanent magnet}
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H01H51/2227 2 {in which the movable part comprises at least one permanent magnet, sandwiched between pole-plates, each forming an active air-gap with parts of the stationary magnetic circuit (H01H51/2209 takes precedence)}
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H01H51/2236 2 {comprising pivotable armature, pivoting at extremity or bending point of armature (H01H51/2227 takes precedence)}
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H01H51/2245 3 {Armature inside coil}
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H01H51/2254 4 {Contact forms part of armature}
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H01H51/2263 2 {comprising rotatable armature, rotating around central axis perpendicular to the main plane of the armature (H01H51/2227 takes precedence)}
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H01H51/2272 2 {comprising rockable armature, rocking movement around central axis parallel to the main plane of the armature (H01H51/2227 takes precedence)}
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H01H51/2281 3 {Contacts rigidly combined with armature}
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H01H51/229 4 {Blade-spring contacts alongside armature}
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H01H51/24 2 without intermediate neutral position of rest
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H01H51/26 2 with intermediate neutral position of rest
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H01H51/27 1 Relays with armature having two stable magnetic states and operated by change from one state to the other
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H01H51/28 1 Relays having both armature and contacts within a sealed casing outside which the operating coil is located, e.g. contact carried by a magnetic leaf spring or reed (H01H51/27 takes precedence)
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H01H51/281 2 {Mounting of the relay; Encapsulating; Details of connections}
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H01H51/282 2 {Constructional details not covered by H01H51/281}
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H01H51/284 2 {Polarised relays}
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H01H51/285 3 {for latching of contacts}
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H01H51/287 2 {Details of the shape of the contact springs}
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H01H51/288 2 {Freely suspended contacts}
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H01H51/29 1 Relays having armature, contacts, and operating coil within a sealed casing (H01H51/27 takes precedence)
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H01H51/30 1 specially adapted for actuation by ac
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H01H51/32 2 Frequency relays; Mechanically-tuned relays
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H01H51/34 1 Self-interrupters, i.e. with periodic or other repetitive opening and closing of contacts
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H01H51/36 2 wherein the make-to-break ratio is varied by hand setting or current strength
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H01H53/00 0 Relays using the dynamo-electric effect, i.e. relays in which contacts are opened or closed due to relative movement of current-carrying conductor and magnetic field caused by force of interaction between them
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H01H53/01 1 Details
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H01H53/015 2 Moving coils; Contact-driving arrangements associated therewith
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H01H53/02 1 Electrodynamic relays, i.e. relays in which the interaction is between two current-carrying conductors
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H01H53/04 2 Ferrodynamic relays, i.e. relays in which the magnetic field is concentrated in ferromagnetic parts
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H01H53/06 1 Magnetodynamic relays, i.e. relays in which the magnetic field is produced by a permanent magnet
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H01H53/08 1 wherein a mercury contact constitutes the current-carrying conductor
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H01H53/10 1 Induction relays, i.e. relays in which the interaction is between a magnetic field and current induced thereby in a conductor
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H01H53/12 2 Ferraris relays
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H01H53/14 1 Contacts actuated by an electric motor through fluid-pressure transmission, e.g. using a motor-driven pump
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H01H55/00 0 Magnetostrictive relays
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H01H57/00 0 Electrostrictive relays; Piezo-electric relays
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H01H2057/003 1 {the relay being latched in actuated position by magnet}
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H01H2057/006 1 {Micromechanical piezoelectric relay}
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H01H59/00 0 Electrostatic relays; Electro-adhesion relays
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H01H59/0009 1 {making use of micromechanics}
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H01H2059/0018 2 {Special provisions for avoiding charge trapping, e.g. insulation layer between actuating electrodes being permanently polarised by charge trapping so that actuating or release voltage is altered}
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H01H2059/0027 2 {Movable electrode connected to ground in the open position, for improving isolation}
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H01H2059/0036 2 {Movable armature with higher resonant frequency for faster switching}
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H01H2059/0045 2 {with s-shaped movable electrode, positioned and connected between two driving fixed electrodes, e.g. movable electrodes moving laterally when driving voltage being applied}
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H01H2059/0054 2 {Rocking contacts or actuating members}
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H01H2059/0063 2 {with stepped actuation, e.g. actuation voltages applied to different sets of electrodes at different times or different spring constants during actuation}
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H01H2059/0072 2 {with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position}
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H01H2059/0081 2 {with a tapered air-gap between fixed and movable electrodes}
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H01H2059/009 1 {using permanently polarised dielectric layers}
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H01H61/00 0 Electrothermal relays (thermal switches not operated by electrical input, thermal switches with anticipating electrical input H01H37/00; thermally-sensitive members H01H37/32)
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H01H61/002 1 {Structural combination of a time delay electrothermal relay with an electrothermal protective relay, e.g. a start relay}
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H01H2061/004 2 {PTC resistor in series with start winding, e.g. adapted for being switched off after starting for limiting power dissipation}
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H01H2061/006 1 {Micromechanical thermal relay}
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H01H2061/008 2 {Micromechanical actuator with a cold and a hot arm, coupled together at one end}
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H01H61/01 1 Details
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H01H61/0107 2 {making use of shape memory materials}
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H01H2061/0115 3 {Shape memory alloy [SMA] actuator formed by coil spring}
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H01H2061/0122 3 {Two SMA actuators, e.g. one for closing or resetting contacts and one for opening them}
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H01H61/013 2 Heating arrangements for operating relays
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H01H61/017 3 Heating by glow discharge or arc in confined space
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H01H61/02 1 wherein the thermally-sensitive member is heated indirectly, e.g. resistively, inductively
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H01H61/04 1 wherein the thermally-sensitive member is only heated directly
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H01H61/06 1 Self-interrupters, i.e. with periodic or other repetitive opening and closing of contacts
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H01H61/063 2 {making use of a bimetallic element}
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H01H61/066 2 {making use of an extensible wire, rod or strips}
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H01H61/08 2 wherein the make-to-break ratio is varied by hand setting or current strength
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H01H63/00 0 Details of electrically-operated selector switches
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H01H63/02 1 Contacts; Wipers; Connections thereto
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H01H63/04 2 Contact-making or contact-breaking wipers; Position indicators therefor
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H01H63/06 2 Contact banks
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H01H63/08 3 cylindrical
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H01H63/10 3 plane
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H01H63/12 2 Multiplying connections to contact banks, e.g. using ribbon cables
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H01H63/14 3 without soldering
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H01H63/16 1 Driving arrangements for multi-position wipers
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H01H63/18 2 with step-by-step motion of wiper to a selector position
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H01H63/20 3 using stepping magnet and ratchet
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H01H63/22 3 using step-by-step electromagnetic drive without ratchet, e.g. self-interrupting driving magnet
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H01H63/24 2 with continuous motion of wiper until a selected position is reached
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H01H63/26 3 with an individual clutch-drive from a shaft common to more than one selector switch
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H01H63/28 3 with an individual motor for each selector switch
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H01H63/30 4 Pneumatic motor for moving wiper to selected position
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H01H63/32 4 Spring motor for moving wiper to selected position
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H01H63/33 1 Constructional details of co-ordinate-type selector switches not having relays at cross-points
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H01H63/34 1 Bases; Cases; Covers; Mountings (racks for mounting selectors with or without other exchange equipment H04Q1/04); Mounting of fuses on selector switch
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H01H63/36 1 Circuit arrangements for ensuring correct or desired operation and not adapted to a particular application of the selector switch
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H01H63/38 2 for multi-position wiper switches
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H01H63/40 2 for multi-position switches without wipers
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H01H63/42 3 for co-ordinate-type selector switches not having relays at cross-points
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H01H65/00 0 Apparatus or processes specially adapted to the manufacture of selector switches or parts thereof
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H01H67/00 0 Electrically-operated selector switches
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H01H67/02 1 Multi-position wiper switches
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H01H67/04 2 having wipers movable only in one direction for purpose of selection
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H01H67/06 3 Rotary switches, i.e. having angularly movable wipers
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H01H67/08 4 with wiper selection
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H01H67/10 4 with coarse and fine positioning of wipers
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H01H67/12 3 Linear-motion switches
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H01H67/14 2 having wipers movable in two mutually perpendicular directions for purpose of selection
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H01H67/16 3 one motion being rotary and the other being parallel to the axis of rotation, e.g. Strowger or "up and around" switches
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H01H67/18 3 one motion being rotary and the other being perpendicular to the axis of rotation, e.g. "round and in" switches
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H01H67/20 3 both motions being linear
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H01H67/22 1 Switches without multi-position wipers
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H01H67/24 2 Co-ordinate-type relay switches having an individual electromagnet at each cross-point
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H01H67/26 2 Co-ordinate-type selector switches not having relays at cross-points but involving mechanical movement, e.g. cross-bar switch, code-bar switch
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H01H67/30 2 Co-ordinate-type selector switches with field of co-ordinate coil acting directly upon magnetic leaf spring or reed-type contact member
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H01H67/32 2 having a multiplicity of interdependent armatures operated in succession by a single coil and each controlling one contact or set of contacts, e.g. counting relay
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H01H69/00 0 Apparatus or processes for the manufacture of emergency protective devices
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H01H69/01 1 for calibrating or setting of devices to function under predetermined conditions
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H01H2069/013 2 {with calibrating screws in trip bar}
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H01H2069/016 2 {with single separate parts mountable or insertable in different orientations or positions, e.g. to obtain desired trip conditions}
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H01H69/02 1 Manufacture of fuses
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H01H69/022 2 {of printed circuit fuses}
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H01H2069/025 2 {using lasers}
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H01H2069/027 2 {using ultrasonic techniques}
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H01H71/00 0 Details of the protective switches or relays covered by groups H01H73/00 - H01H83/00
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H01H71/002 1 {with provision for switching the neutral conductor}
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H01H2071/004 2 {with a tripping or current sensing device in the neutral wire, e.g. for third harmonics in a three fase system}
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H01H2071/006 1 {Provisions for user interfaces for electrical protection devices}
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H01H2071/008 1 {Protective switches or relays using micromechanics}
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H01H71/02 1 Housings; Casings; Bases; Mountings
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H01H71/0207 2 {Mounting or assembling the different parts of the circuit breaker}
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H01H71/0214 3 {Housing or casing lateral walls containing guiding grooves or special mounting facilities (H01H71/0221 takes precedence)}
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H01H71/0221 3 {Majority of parts mounted on central frame or wall}
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H01H71/0228 3 {having provisions for interchangeable or replaceable parts}
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H01H71/0235 3 {Contacts and the arc extinguishing space inside individual separate cases, which are positioned inside the housing of the circuit breaker (casettes for rotating bridges see H01H1/2058)}
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H01H2071/0242 3 {Assembling parts of a circuit breaker by using snap mounting techniques}
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H01H71/025 2 {Constructional details of housings or casings not concerning the mounting or assembly of the different internal parts}
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H01H71/0257 3 {Strength considerations}
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H01H71/0264 2 {Mountings or coverplates for complete assembled circuit breakers, e.g. snap mounting in panel}
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H01H71/0271 3 {Mounting several complete assembled circuit breakers together (interconnected mechanisms H01H71/1009)}
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H01H2071/0278 4 {with at least one of juxtaposed casings dedicated to an auxiliary device, e.g. for undervoltage or shunt trip}
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H01H2071/0285 4 {Provisions for an intermediate device between two adjacent circuit breakers having the same general contour but an auxiliary function, e.g. cooling, isolation, wire guiding, magnetic isolation or screening}
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H01H2071/0292 2 {Housing or frames containing grooves or slots for guiding movable parts}
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H01H71/04 1 Means for indicating condition of the switching device {(by means of an auxiliary contact H01H71/46)}
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H01H2071/042 2 {with different indications for different conditions, e.g. contact position, overload, short circuit or earth leakage}
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H01H2071/044 2 {Monitoring, detection or measuring systems to establish the end of life of the switching device, can also contain other on-line monitoring systems, e.g. for detecting mechanical failures}
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H01H2071/046 2 {exclusively by position of operating part, e.g. with additional labels or marks but no other movable indicators}
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H01H2071/048 2 {containing non-mechanical switch position sensor, e.g. HALL sensor}
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H01H71/06 1 Distinguishing marks, e.g. colour coding
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H01H71/08 1 Terminals; Connections
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H01H71/082 2 {Connections between juxtaposed circuit breakers}
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H01H2071/084 2 {specially adapted for avoiding decalibration of trip unit, e.g. bimetal, when fixing conductor wire to connector}
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H01H2071/086 2 {Low power connections for auxiliary switches, e.g. shunt trip}
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H01H2071/088 2 {Terminals for switching devices which make the devices interchangeable, e.g. with fuses}
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H01H71/10 1 Operating or release mechanisms
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H01H71/1009 2 {Interconnected mechanisms (H01H71/1045 takes precedence; operated by excess current and other electrical conditions H01H83/20)}
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H01H71/1018 3 {with only external interconnections}
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H01H71/1027 3 {comprising a bidirectional connecting member actuated by the opening movement of one pole to trip a neighbour pole}
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H01H2071/1036 3 {having provisions for four or more poles}
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H01H71/1045 2 {Multiple circuits-breaker, e.g. for the purpose of dividing current or potential drop}
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H01H71/1054 2 {Means for avoiding unauthorised release}
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H01H2071/1063 3 {making use of an equilibrating mass}
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H01H71/1072 2 {Release mechanisms which are reset by opening movement of contacts}
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H01H71/1081 2 {Modifications for selective or back-up protection; Correlation between feeder and branch circuit breaker (circuits H02H3/06, H02H7/26)}
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H01H2071/109 2 {with provisions for selecting between automatic or manual reset}
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H01H71/12 2 Automatic release mechanisms with or without manual release
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H01H71/121 3 {Protection of release mechanisms (with auxiliary contact H01H71/48)}
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H01H71/122 3 {actuated by blowing of a fuse}
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H01H71/123 3 {using a solid-state trip unit (circuits H02H)}
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H01H2071/124 4 {with a hybrid structure, the solid state trip device being combined with a thermal or a electromagnetic trip}
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H01H71/125 4 {characterised by sensing elements, e.g. current transformers (for differential protection H01H83/144)}
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H01H71/126 3 {actuated by dismounting of circuit breaker or removal of part of circuit breaker}
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H01H71/127 3 {using piezoelectric, electrostrictive or magnetostrictive trip units}
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H01H71/128 3 {Manual release or trip mechanisms, e.g. for test purposes (two similar push buttons for closing or resetting and opening or tripping H01H71/58; test switches for earth fault circuit breakers H01H83/04)}
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H01H71/14 3 Electrothermal mechanisms {(combined with a electro-thermal time delay relay H01H61/002)}
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H01H71/142 4 {actuated due to change of magnetic permeability}
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H01H71/145 4 {using shape memory materials (H01H71/16 takes precedence)}
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H01H2071/147 4 {Thermal release by expansion of a fluid}
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H01H71/16 4 with bimetal element {(combined with detection of imbalance of two or more currents H01H83/223)}
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H01H71/161 5 {with helically or spirally wound bimetal}
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H01H71/162 5 {with compensation for ambient temperature}
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H01H71/164 5 {Heating elements}
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H01H2071/165 6 {the bimetal being inductively heated, e.g. load current does not pass through bimetal}
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H01H2071/167 5 {Multiple bimetals working in parallel together, e.g. laminated together}
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H01H2071/168 5 {Provisions for avoiding permanent deformation and thus decalibration of bimetal, e.g. due to overheating or action of a magnet}
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H01H71/18 4 with expanding rod, strip, or wire
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H01H71/20 4 with fusible mass
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H01H71/205 5 {using a ratchet wheel kept against rotation by solder}
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H01H71/22 4 with compensation for variation of ambient temperature {(H01H71/162 takes precedence)}
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H01H71/24 3 Electromagnetic mechanisms
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H01H71/2409 4 {combined with an electromagnetic current limiting mechanism}
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H01H71/2418 4 {combined with an electrodynamic current limiting mechanism}
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H01H2071/2427 5 {with blow-off movement tripping mechanism, e.g. electrodynamic effect on contacts trips the traditional trip device before it can unlatch the spring mechanism by itself}
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H01H71/2436 4 {with a holding and a releasing magnet, the holding force being limited due to saturation of the holding magnet}
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H01H71/2445 4 {using a reed switch (for current measuring G01R19/16509)}
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H01H71/2454 4 {characterised by the magnetic circuit or active magnetic elements}
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H01H71/2463 4 {with plunger type armatures}
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H01H71/2472 4 {with rotatable armatures}
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H01H71/2481 4 {characterised by the coil design}
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H01H2071/249 4 {with part of the magnetic circuit being in the normal current path in the circuit breaker, e.g. yoke, fixed contact and arc-runner are made out of one single conductive element}
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H01H71/26 4 with windings acting in opposition {(H01H71/2436 takes precedence)}
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H01H71/28 4 with windings acting in conjunction
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H01H71/30 4 having additional short-circuited winding
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H01H71/32 4 having permanently magnetised part
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H01H71/321 5 {characterised by the magnetic circuit or active magnetic elements}
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H01H71/322 6 {with plunger type armature}
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H01H71/323 6 {with rotatable armature}
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H01H71/325 5 {Housings, assembly or disposition of different elements in the housing}
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H01H71/326 6 {Sealed housings}
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H01H71/327 5 {Manufacturing or calibrating methods, e.g. air gap treatments}
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H01H2071/328 5 {using a spring for having minimal force on armature while maximal force on trip pin}
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H01H71/34 4 having two or more armatures controlled by a common winding
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H01H71/345 5 {having a delayed movable core and a movable armature}
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H01H71/36 4 frequency selective
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H01H71/38 4 wherein the magnet coil also acts as arc blow-out device
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H01H71/40 3 Combined electrothermal and electromagnetic mechanisms
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H01H71/402 4 {in which the thermal mechanism influences the magnetic circuit of the electromagnetic mechanism}
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H01H71/405 4 {in which a bimetal forms the inductor for the electromagnetic mechanism}
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H01H2071/407 4 {the thermal element being heated by the coil of the electromagnetic mechanism}
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H01H71/42 3 Induction-motor, induced-current, or electrodynamic release mechanisms
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H01H71/43 4 Electrodynamic release mechanisms
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H01H71/44 3 having means for introducing a predetermined time delay (by short-circuited winding H01H71/30; by additional armature H01H71/34)
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H01H71/443 4 {with dash-pot}
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H01H71/446 4 {making use of an inertia mass}
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H01H71/46 3 having means for operating auxiliary contacts additional to the main contacts
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H01H71/462 4 {housed in a separate casing, juxtaposed to and having the same general contour as the main casing (for neutral conductor H01H71/002)}
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H01H71/465 4 {Self-contained, easily replaceable microswitches}
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H01H2071/467 4 {with history indication, e.g. of trip and/or kind of trip, number of short circuits etc.}
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H01H71/48 4 with provision for short-circuiting the electrical input to the release mechanism after release of the switch, e.g. for protection of heating wire
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H01H71/50 2 Manual reset mechanisms {which may be also used for manual release}
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H01H71/501 3 {Means for breaking welded contacts; Indicating contact welding or other malfunction of the circuit breaker}
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H01H2071/502 4 {with direct contact between manual operator and welded contact structure}
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H01H71/503 3 {Means for increasing the opening stroke of the contacts}
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H01H71/504 3 {provided with anti-rebound means}
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H01H71/505 3 {Latching devices between operating and release mechanism}
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H01H2071/506 4 {using balls or rollers in the latching device}
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H01H2071/507 4 {being collapsible, e.g. yielding elastically, when the opening force is higher than a predetermined value}
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H01H2071/508 4 {with serial latches, e.g. primary latch latched by secondary latch for requiring a smaller trip force}
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H01H71/52 3 actuated by lever
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H01H71/521 4 {Details concerning the lever handle}
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H01H71/522 4 {comprising a cradle-mechanism}
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H01H71/523 5 {the contact arm being pivoted on cradle and mechanism spring acting between handle and contact arm}
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H01H71/524 5 {the contact arm being pivoted on handle and mechanism spring acting between cradle and contact arm}
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H01H71/525 5 {comprising a toggle between cradle and contact arm and mechanism spring acting between handle and toggle knee}
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H01H71/526 4 {the lever forming a toggle linkage with a second lever, the free end of which is directly and releasably engageable with a contact structure}
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H01H71/527 4 {making use of a walking beam with one extremity latchable, the other extremity actuating or supporting the movable contact and an intermediate part co-operating with the actuator}
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H01H71/528 4 {comprising a toggle or collapsible link between handle and contact arm, e.g. sear pin mechanism}
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H01H71/529 4 {comprising an electroresponsive element forming part of the transmission chain between handle and contact arm}
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H01H71/54 3 actuated by tumbler
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H01H71/56 3 actuated by rotatable knob or wheel
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H01H2071/565 4 {using a add on unit, e.g. a separate rotary actuator unit, mounted on lever actuated circuit breakers}
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H01H71/58 3 actuated by push-button, pull-knob, or slide
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H01H71/60 3 actuated by closure of switch casing
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H01H71/62 3 with means for preventing resetting while abnormal condition persists, e.g. loose handle arrangement
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H01H71/64 4 incorporating toggle linkage
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H01H71/66 2 Power reset mechanisms
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H01H2071/665 3 {the reset mechanism operating directly on the normal manual operator, e.g. electromagnet pushes manual release lever back into "ON" position}
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H01H71/68 3 actuated by electromagnet
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H01H71/685 4 {in which the excitation of the electromagnet is interrupted by abnormal conditions}
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H01H71/70 3 actuated by electric motor
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H01H71/72 3 actuated automatically a limited number of times
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H01H71/74 1 Means for adjusting the conditions under which the device will function to provide protection
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H01H71/7409 2 {Interchangeable elements}
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H01H71/7418 2 {Adjusting both electrothermal and electromagnetic mechanism}
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H01H71/7427 2 {Adjusting only the electrothermal mechanism}
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H01H71/7436 3 {Adjusting the position (or prestrain) of the bimetal (H01H71/7445 takes precedence)}
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H01H71/7445 3 {Poly-phase adjustment}
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H01H2071/7454 3 {with adjustable axis of transmission lever between bimetal element and trip lever}
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H01H71/7463 2 {Adjusting only the electromagnetic mechanism}
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H01H2071/7472 2 {with antitamper means for avoiding unauthorised setting}
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H01H2071/7481 2 {with indexing means for magnetic or thermal tripping adjustment knob}
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H01H2071/749 2 {with a shunt element connected in parallel to magnetic or thermal trip elements, e.g. for adjusting trip current}
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H01H73/00 0 Protective overload circuit-breaking switches in which excess current opens the contacts by automatic release of mechanical energy stored by previous operation of a hand reset mechanism
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H01H73/02 1 Details
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H01H73/04 2 Contacts
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H01H73/045 3 {Bridging contacts}
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H01H73/06 2 Housings; Casings; Bases; Mountings
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H01H73/08 3 Plug-in housings
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H01H73/10 3 Cartridge housings, e.g. screw-in housing
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H01H73/12 2 Means for indicating condition of the switch
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H01H73/14 3 Indicating lamp structurally associated with the switch
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H01H73/16 2 Distinguishing marks, e.g. colour coding
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H01H73/18 2 Means for extinguishing or suppressing arc {(magnet coil acting as blow-out device H01H71/38)}
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H01H73/20 2 Terminals; Connections
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H01H73/22 1 having electrothermal release and no other automatic release (cartridge type H01H73/62)
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H01H73/24 2 reset by lever
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H01H73/26 2 reset by tumbler
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H01H73/28 2 reset by rotatable knob or wheel
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H01H73/30 2 reset by push-button, pull-knob or slide
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H01H73/303 3 {with an insulating body insertable between the contacts when released by a bimetal element}
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H01H73/306 3 {the push-button supporting pivotally a combined contact-latch lever}
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H01H73/32 2 reset by closure of switch casing
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H01H73/34 2 reset action requiring replacement or reconditioning of a fusible or explosive part
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H01H73/36 1 having electromagnetic release and no other automatic release (cartridge type H01H73/64)
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H01H73/38 2 reset by lever
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H01H73/40 2 reset by tumbler
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H01H73/42 2 reset by rotatable knob or wheel
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H01H73/44 2 reset by push-button, pull-knob or slide
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H01H73/46 2 reset by closure of switch casing
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H01H73/48 1 having both electrothermal and electromagnetic automatic release (cartridge type H01H73/66)
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H01H73/50 2 reset by lever
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H01H73/52 2 reset by tumbler
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H01H73/54 2 reset by rotatable knob or wheel
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H01H73/56 2 reset by push-button, pull-knob or slide
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H01H73/58 2 reset by closure of switch casing
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H01H73/60 1 cartridge type, e.g. screw-in cartridge
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H01H73/62 2 having only electrothermal release
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H01H73/64 2 having only electromagnetic release
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H01H73/66 2 having combined electrothermal and electromagnetic release
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H01H75/00 0 Protective overload circuit-breaking switches in which excess current opens the contacts by automatic release of mechanical energy stored by previous operation of power reset mechanism
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H01H75/02 1 Details
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H01H75/04 2 Reset mechanisms for automatically reclosing a limited number of times (circuit arrangements H02H3/06)
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H01H75/06 3 effecting one reclosing action only
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H01H75/08 1 having only electrothermal release
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H01H75/10 1 having only electromagnetic release
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H01H75/12 1 having combined electrothermal and electromagnetic release
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H01H77/00 0 Protective overload circuit-breaking switches operated by excess current and requiring separate action for resetting (H01H73/00, H01H75/00 take precedence)
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H01H77/02 1 in which the excess current itself provides the energy for opening the contacts, and having a separate reset mechanism
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H01H2077/025 2 {with pneumatic means, e.g. by arc pressure}
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H01H77/04 2 with electrothermal opening
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H01H77/06 2 with electromagnetic opening {(combined with electromagnetic release mechanism H01H71/2409)}
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H01H77/08 3 retained closed by permanent or remanent magnetism and opened by windings acting in opposition
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H01H77/10 2 with electrodynamic opening {(combined with electromagnetic release mechanism H01H71/2418)}
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H01H77/101 3 {with increasing of contact pressure by electrodynamic forces before opening}
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H01H77/102 3 {characterised by special mounting of contact arm, allowing blow-off movement}
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H01H77/104 4 {with a stable blow-off position}
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H01H77/105 4 {whereby the blow-off movement unlatches the contact from a contact holder}
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H01H77/107 3 {characterised by the blow-off force generating means, e.g. current loops}
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H01H77/108 4 {comprising magnetisable elements, e.g. flux concentrator, linear slot motor}
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H01H79/00 0 Protective switches in which excess current causes the closing of contacts, e.g. for short-circuiting the apparatus to be protected {(H01H39/004 takes precedence)}
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H01H81/00 0 Protective switches in which contacts are normally closed but are repeatedly opened and reclosed as long as a condition causing excess current persists, e.g. for current limiting
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H01H81/02 1 electrothermally operated
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H01H81/04 1 electromagnetically operated
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H01H83/00 0 Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current
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H01H83/02 1 operated by earth fault currents (H01H83/14 takes precedence)
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H01H83/04 2 with testing means for indicating the ability of the switch or relay to function properly
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H01H2083/045 3 {Auxiliary switch opening testing circuit in synchronism with the main circuit}
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H01H83/06 1 operated by current falling below a predetermined value
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H01H83/08 1 operated by reversal of dc
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H01H83/10 1 operated by excess voltage, e.g. for lightning protection
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H01H83/12 1 operated by voltage falling below a predetermined value, e.g. for no-volt protection
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H01H83/14 1 operated by unbalance of two or more currents or voltages, e.g. for differential protection
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H01H83/142 2 {with bimetal elements}
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H01H83/144 2 {with differential transformer}
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H01H2083/146 3 {Provisions for avoiding disadvantages of having asymetrical primaries, e.g. induction of a magnetic field even by zero difference current}
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H01H2083/148 3 {with primary windings formed of rigid copper conductors}
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H01H83/16 1 operated by abnormal ratio of voltage and current, e.g. distance relay
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H01H83/18 1 operated by abnormal product of, or abnormal phase angle between, voltage and current, e.g. directional relay
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H01H83/20 1 operated by excess current as well as by some other abnormal electrical condition
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H01H2083/201 2 {the other abnormal electrical condition being an arc fault}
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H01H2083/203 2 {with shunt trip circuits, e.g. NC contact in an undervoltage coil circuit}
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H01H2083/205 2 {having shunt or UVR tripping device with integrated mechanical energy accumulator}
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H01H2083/206 2 {with thermal shunt trip}
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H01H2083/208 2 {Converting under voltage release [UVR] and shunt release}
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H01H83/22 2 the other condition being unbalance of two or more currents or voltages
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H01H83/223 3 {with bimetal elements}
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H01H83/226 3 {with differential transformer}
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H01H85/00 0 Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive (switches actuated by melting of fusible material H01H37/76; disposition or arrangement of fuses on boards H02B1/18)
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H01H2085/0004 1 {making use of shape-memory material}
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H01H2085/0008 1 {making use of heat shrinkable material}
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H01H85/0013 1 {Means for preventing damage, e.g. by ambient influences to the fuse}
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H01H85/0017 2 {due to vibration or other mechanical forces, e.g. centrifugal forces}
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H01H85/0021 2 {water or dustproof devices}
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H01H85/0026 3 {casings for the fuse and its base contacts}
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H01H85/003 3 {casings for the fusible element}
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H01H2085/0034 3 {with molded casings}
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H01H85/0039 1 {Means for influencing the rupture process of the fusible element}
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H01H85/0043 2 {Boiling of a material associated with the fusible element, e.g. surrounding fluid}
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H01H85/0047 2 {Heating means}
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H01H85/0052 3 {Fusible element and series heating means or series heat dams}
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H01H85/0056 3 {Heat conducting or heat absorbing means associated with the fusible member, e.g. for providing time delay}
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H01H85/006 3 {Heat reflective or insulating layer on the casing or on the fuse support}
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H01H85/0065 3 {Heat reflective or insulating layer on the fusible element}
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H01H85/0069 3 {Heat reflective or insulating filler, support, or block forming the casing}
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H01H85/0073 2 {Expansion or rupture of the insulating support for the fusible element}
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H01H85/0078 1 {Security-related arrangements}
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H01H85/0082 2 {preventing explosion of the cartridge}
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H01H85/0086 3 {use of a flexible body, e.g. inside the casing}
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H01H85/0091 2 {providing disconnection of the neutral line}
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H01H85/0095 2 {Earthing means}
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H01H85/02 1 Details
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H01H85/0208 2 {Tools for inserting and removing fuses}
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H01H2085/0216 2 {Tools for controlling fuses or the line associated with the fuses}
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H01H2085/0225 2 {Means for preventing discharge, e.g. corona ring}
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H01H2085/0233 2 {with common casing for fusible elements inserted in more than one phase or more than one circuit}
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H01H85/0241 2 {Structural association of a fuse and another component or apparatus (switches with built-in fuses H01H9/10, spark-gap arresters H01H85/44, transformers and inductances H01F27/402, capacitors H01G2/14, lamps H01K1/66, semiconductors H01L23/5256 or H01L23/62)}
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H01H2085/025 3 {Structural association with a binding post of a storage battery}
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H01H2085/0258 3 {Structural association of a fuse or a fuse holder with a bimetallic element}
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H01H2085/0266 3 {Structural association with a measurement device, e.g. a shunt}
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H01H2085/0275 3 {Structural association with a printed circuit board}
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H01H2085/0283 3 {Structural association with a semiconductor device}
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H01H2085/0291 3 {Structural association with a current transformer}
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H01H85/04 2 Fuses, i.e. expendable parts of the protective device, e.g. cartridges
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H01H85/041 3 characterised by the type
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H01H85/0411 4 {Miniature fuses}
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H01H2085/0412 5 {specially adapted for being mounted on a printed circuit board}
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H01H2085/0414 5 {Surface mounted fuses}
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H01H85/0415 5 {cartridge type}
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H01H85/0417 6 {with parallel side contacts}
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H01H85/0418 6 {with ferrule type end contacts}
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H01H85/042 4 General constructions or structure of high voltage fuses, i.e. above 1000 V
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H01H85/044 4 General constructions or structure of low voltage fuses, i.e. below 1000 V, or of fuses where the applicable voltage is not specified (H01H85/046 - H01H85/048 take precedence)
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H01H85/0445 5 fast or slow type (H01H85/045 - H01H85/048 take precedence)
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H01H85/045 5 cartridge type
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H01H85/0452 6 {with parallel side contacts}
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H01H85/0454 6 {with screw-in type contacts}
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H01H85/0456 6 {with knife-blade end contacts}
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H01H85/0458 6 {with ferrule type end contacts}
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H01H85/046 4 Fuses formed as printed circuits
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H01H85/047 4 Vacuum fuses
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H01H85/048 4 Fuse resistors
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H01H2085/0483 5 {with temperature dependent resistor, e.g. thermistor}
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H01H2085/0486 5 {with voltage dependent resistor, e.g. varistor}
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H01H85/05 3 Component parts thereof
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H01H85/055 4 Fusible members
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H01H2085/0555 5 {Input terminal connected to a plurality of output terminals, e.g. multielectrode}
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H01H85/06 5 characterised by the fusible material (H01H85/11 takes precedence)
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H01H85/08 5 characterised by the shape or form of the fusible member
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H01H85/10 6 with constriction for localised fusing (H01H85/11 takes precedence)
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H01H85/11 6 with applied local area of a metal which, on melting, forms a eutectic with the main material of the fusible member, i.e. M-effect devices
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H01H85/12 5 Two or more separate fusible members in parallel
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H01H85/143 4 Electrical contacts; Fastening fusible members to such contacts
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H01H85/147 5 Parallel-side contacts
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H01H85/15 5 Screw-in contacts
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H01H85/153 5 Knife-blade-end contacts
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H01H85/157 5 Ferrule-end contacts
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H01H85/165 4 Casings
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H01H85/17 5 characterised by the casing material
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H01H85/175 5 characterised by the casing shape or form
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H01H85/1755 6 {composite casing}
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H01H85/18 4 Casing fillings, e.g. powder
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H01H85/185 5 {Insulating members for supporting fusible elements inside a casing, e.g. for helically wound fusible elements}
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H01H85/20 2 Bases for supporting the fuse; Separate parts thereof
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H01H85/2005 3 {for use with screw-in type fuse}
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H01H85/201 3 {for connecting a fuse in a lead and adapted to be supported by the lead alone}
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H01H85/2015 3 {for plug-in type fuses}
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H01H85/202 3 {for fuses with ferrule type end contacts}
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H01H85/2025 3 {for fuses with conical end contacts, e.g. fuses used on motor vehicles}
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H01H85/203 3 {for fuses with blade type terminals}
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H01H85/2035 4 {for miniature fuses with parallel side contacts}
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H01H85/204 4 {for low voltage fuses with knife-blade end contacts}
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H01H85/2045 3 {Mounting means or insulating parts of the base, e.g. covers, casings}
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H01H85/205 3 {Electric connections to contacts on the base}
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H01H2085/2055 4 {Connections to bus bars in an installation with screw in type fuses or knife blade fuses}
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H01H2085/206 4 {being tappable, e.g. terminals on the fuse or base being arranged so as to permit an additional connector to be engaged therewith}
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H01H2085/2065 3 {with base contacts adapted or adaptable to fuses of different lenghts; bases with self-aligning contacts; intermediate adaptation pieces}
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H01H2085/207 3 {Bases adapted to fuses with different end contacts or to other components, e.g. circuit breakers; intermediate adaptation pieces}
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H01H2085/2075 3 {Junction box, having holders integrated with several other holders in a particular wiring layout}
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H01H2085/208 4 {specially adapted for vehicles}
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H01H2085/2085 3 {Holders for mounting a fuse on a printed circuit}
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H01H2085/209 3 {Modular assembly of fuses or holders, e.g. side by side; combination of a plurality of identical fuse units}
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H01H2085/2095 3 {Triangular setup of fuses, e.g. for space saving}
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H01H85/22 2 Intermediate or auxiliary parts for carrying, holding, or retaining fuse, co-operating with base or fixed holder, and removable therefrom for renewing the fuse
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H01H85/24 2 Means for preventing insertion of incorrect fuse
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H01H85/25 2 Safety arrangements preventing or inhibiting contact with live parts, including operation of isolation on removal of cover
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H01H85/26 2 Magazine arrangements
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H01H85/263 3 {with spare printed circuit fuse}
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H01H2085/266 3 {with replacement of a fuse which is part of a printed circuit}
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H01H85/28 3 effecting automatic replacement
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H01H85/30 2 Means for indicating condition of fuse structurally associated with the fuse
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H01H85/303 3 {Movable indicating elements}
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H01H85/306 4 {acting on an auxiliary switch or contact}
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H01H85/32 3 Indicating lamp structurally associated with the protective device
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H01H85/34 2 Distinguishing marks, e.g. colour coding
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H01H85/36 2 Means for applying mechanical tension to fusible member
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H01H85/38 2 Means for extinguishing or suppressing arc (by powder filling H01H85/18; by mechanical tension applied to fusible member H01H85/36)
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H01H2085/381 3 {with insulating body insertable between the end contacts of the fusible element}
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H01H2085/383 3 {with insulating stationary parts}
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H01H2085/385 3 {Impedances connected with the end contacts of the fusible element}
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H01H2085/386 3 {with magnetic or electrodynamic arc-blowing}
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H01H2085/388 3 {using special materials}
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H01H85/40 3 using an arc-extinguishing liquid (characterised by the composition of the liquid H01H33/22)
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H01H85/42 3 using an arc-extinguishing gas (characterised by the composition of the gas H01H33/22)
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H01H85/43 2 Means for exhausting or absorbing gases liberated by fusing arc, or for ventilating excess pressure generated by heating
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H01H85/44 2 Structural association with a spark-gap arrester
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H01H85/46 2 Circuit arrangements not adapted to a particular application of the protective device
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H01H85/463 3 {with printed circuit fuse}
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H01H2085/466 3 {with remote controlled forced fusing}
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H01H85/47 2 Means for cooling
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H01H85/48 1 Protective devices wherein the fuse is carried or held directly by the base
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H01H85/485 2 {the fuse being provided with bayonet-type locking means}
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H01H85/50 2 the fuse having contacts at opposite ends for co-operation with the base
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H01H85/52 2 the fuse being adapted for screwing into the base
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H01H85/54 1 Protective devices wherein the fuse is carried, held, or retained by an intermediate or auxiliary part removable from the base, or used as sectionalisers
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H01H85/542 2 {the intermediate or auxiliary part being provided with bayonet-type locking means}
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H01H85/545 2 {with pivoting fuse carrier (tumbler switch with built-in fuse H01H23/10)}
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H01H85/547 2 {with sliding fuse carrier}
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H01H85/56 2 the intermediate or auxiliary part having side contacts for plugging into the base, e.g. bridge-carrier type
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H01H85/58 3 with intermediate auxiliary part and base shaped to interfit and thereby enclose the fuse
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H01H85/60 2 the intermediate or auxiliary part having contacts at opposite ends for co-operation with the base
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H01H85/62 2 the intermediate or auxiliary part being adapted for screwing into the base
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H01H87/00 0 Protective devices in which a current flowing through a liquid or solid is interrupted by the evaporation of the liquid or by the melting and evaporation of the solid when the current becomes excessive, the circuit continuity being reestablished on cooling
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H01H89/00 0 Combinations of two or more different basic types of electric switches, relays, selectors and emergency protective devices, not covered by any single one of the other main groups of this subclass
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H01H2089/005 1 {Multi-purpose combinations, e.g. LS/DI, LS/FI, of normal protective circuit breakers with known other forms of protection, e.g. earthfaults, differential, unbalance}
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H01H89/02 1 Combination of a key operated switch with a manually operated switch, e.g. ignition and lighting switches
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H01H89/04 1 Combination of a thermally actuated switch with a manually operated switch
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H01H89/06 1 Combination of a manual reset circuit with a contactor, i.e. the same circuit controlled by both a protective and a remote control device
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H01H2089/065 2 {Coordination between protection and remote control, e.g. protection job repartition, mutual assistance or monitoring}
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H01H89/08 2 with both devices using the same contact pair
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H01H89/10 3 with each device controlling one of the two co-operating contacts
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H01H2201/00 0 Contacts
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H01H2201/002 1 bounceless
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H01H2201/004 1 Wiping action
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H01H2201/006 1 self-aligning
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H01H2201/008 1 Both contacts movable
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H01H2201/01 1 Protective enclosure
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H01H2201/012 2 Inert gas in contact space
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H01H2201/014 2 Conductive gas
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H01H2201/016 1 Roughened contact surface, e.g. anti-adhering
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H01H2201/018 1 transparent
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H01H2201/02 1 Piezo element
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H01H2201/022 1 Material
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H01H2201/024 2 precious
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H01H2201/026 2 non precious
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H01H2201/028 3 Indium tin oxide [ITO]
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H01H2201/03 2 Composite
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H01H2201/032 2 Conductive polymer; Rubber
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H01H2201/034 3 anisotropic; Zebra
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H01H2201/036 3 Variable resistance
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H01H2201/038 1 Contact lubricant
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H01H2203/00 0 Form of contacts
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H01H2203/002 1 Raised edge
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H01H2203/004 1 Rivet
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H01H2203/006 1 Staples
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H01H2203/008 1 Wires
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H01H2203/0085 2 Layered switches integrated into garment, clothes or textile
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H01H2203/01 2 Woven wire screen
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H01H2203/012 1 Microprotrusions
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H01H2203/014 2 Grains; Microspheres
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H01H2203/016 1 universal; modular
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H01H2203/018 1 binary coded
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H01H2203/02 1 Interspersed fingers
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H01H2203/022 1 Helical networks
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H01H2203/024 1 Convex contact surface
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H01H2203/026 1 on different planes
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H01H2203/028 1 embedded in layer material
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H01H2203/03 1 printed on casing
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H01H2203/032 1 Metal foil
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H01H2203/034 1 Common bus
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H01H2203/036 1 to solve particular problems
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H01H2203/038 2 to be bridged by a dome shaped contact
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H01H2203/04 2 to facilitate connections
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H01H2203/042 2 to avoid cross-overs
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H01H2203/044 2 to achieve a predetermined sequence of switching
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H01H2203/046 2 to save ink
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H01H2203/048 2 to facilitate application
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H01H2203/05 2 to avoid damage by deformation of layers
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H01H2203/052 2 for backlighted keyboards
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H01H2203/054 2 for redundancy, e.g. several contact pairs in parallel
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H01H2203/056 1 Cuts or depressions in support, e.g. to isolate contacts
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H01H2203/058 1 Contact area function of position on layered keyboard
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H01H2205/00 0 Movable contacts
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H01H2205/002 1 fixed to operating part
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H01H2205/004 1 fixed to substrate
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H01H2205/006 1 mounted on spacer
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H01H2205/008 2 Hollow rivet
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H01H2205/01 1 mounted on flap cut out and bend out of layer
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H01H2205/012 1 mounted on both sides of layer
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H01H2205/014 1 fixed by mechanical deformation
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H01H2205/016 1 Separate bridge contact
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H01H2205/018 2 Support points upwardly concave
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H01H2205/02 2 avoiding rotation
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H01H2205/022 2 Conductive rubber
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H01H2205/024 2 Means to facilitate positioning
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H01H2205/026 3 Adhesive sheet
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H01H2205/028 3 Protuberances on substrate
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H01H2205/03 3 Apertured plate
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H01H2205/032 1 Several contacts formed in one plate or layer
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H01H2205/034 2 with snap action
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H01H2205/036 2 Helicoidal cuts
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H01H2205/038 2 Cutting of connecting areas
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H01H2207/00 0 Connections
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H01H2207/002 1 Conductive rubber; Zebra
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H01H2207/004 1 Printed circuit tail
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H01H2207/006 1 Upraised portions
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H01H2207/008 1 Adhesive means; Conductive adhesive
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H01H2207/01 1 from bottom to top layer
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H01H2207/012 1 via underside of substrate
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H01H2207/014 2 Plated through holes
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H01H2207/016 1 Jumpers; Cross-overs
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H01H2207/018 2 Spacer elements
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H01H2207/02 1 Solder
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H01H2207/022 1 Plug
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H01H2207/024 2 in top layer
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H01H2207/026 1 Pressure contact
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H01H2207/028 1 on spacer
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H01H2207/03 1 via return spring
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H01H2207/032 1 Surface mounted component
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H01H2207/034 1 sealed
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H01H2207/036 1 Crimping connector
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H01H2207/038 1 Conductive paste
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H01H2207/04 1 Details of printed conductors
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H01H2207/042 2 Covering maximal area of layer
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H01H2207/044 2 Resist layer
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H01H2207/046 2 Non overlapping lower and upper conductors
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H01H2207/048 1 Inductive or infrared coupling
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H01H2209/00 0 Layers
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H01H2209/002 1 Materials
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H01H2209/0021 2 with metallic appearance, e.g. polymers with dispersed particles to produce a metallic appearance
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H01H2209/004 1 Depressions or protrusions on switch sites
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H01H2209/006 1 Force isolators
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H01H2209/01 1 Increasing rigidity; Anti-creep
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H01H2209/012 1 avoiding too large deformation or stress
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H01H2209/014 1 composed of different layers; Lubricant in between
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H01H2209/016 1 Protection layer, e.g. for legend, anti-scratch
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H01H2209/018 1 flat, smooth or ripple-free
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H01H2209/02 1 UV or light sensitive
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H01H2209/022 1 Velvet; Mat finish
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H01H2209/024 1 Properties of the substrate
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H01H2209/026 2 metallic
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H01H2209/028 2 Paper
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H01H2209/03 2 elastomeric
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H01H2209/032 2 non elastomeric
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H01H2209/034 2 Conductive rubber
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H01H2209/036 2 with memory properties
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H01H2209/038 2 transparent
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H01H2209/04 3 Glass
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H01H2209/042 2 Trellis; Lattice
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H01H2209/044 2 ceramic
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H01H2209/046 1 Properties of the spacer
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H01H2209/048 2 metallic
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H01H2209/05 2 Paper
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H01H2209/052 2 elastomeric
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H01H2209/054 2 non elastomeric
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H01H2209/056 2 Conductive rubber
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H01H2219/014 2 LED
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H01H2219/022 2 Plasma display
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H01H2219/028 1 Printed information
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H01H2219/03 2 in transparent keyboard
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H01H2219/032 2 photographic
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H01H2219/044 2 Edge lighting of layer
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H01H2219/048 2 Constituting key
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H01H2219/05 2 Key offset in relation to switch site
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H01H2221/0702 2 Transparent key containing three dimensional (3D) element
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H01H2223/012 2 Snap mounting
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H01H2223/014 2 located in recess
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H01H2223/032 2 with formations for assembling similar housings
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H01H2223/054 1 Mounting of key housings on same printed circuit
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H01H2223/056 1 Mounting of key housings on same frame
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H01H2223/062 1 Inflatable
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H01H2225/01 1 Different switch sites under one actuator in same plane
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H01H2225/012 1 normally closed
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H01H2225/014 1 normally closed combined with normally open
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H01H2225/016 1 Make break
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H01H2225/018 1 Consecutive operations
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H01H2225/02 1 Push-push
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H01H2225/022 1 other then row-column disposition
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H01H2225/026 1 above actuator
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H01H2225/028 1 perpendicular to base of keyboard
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H01H2227/01 2 Adhesive
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H01H2227/012 2 Conductive rubber
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H01H2227/014 3 Conductive particles
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H01H2227/016 1 Switch site protrusions; Force concentrators
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H01H2227/018 1 Printed contacts; Metal foil
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H01H2227/02 1 Vent opening
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H01H2227/022 1 Collapsable dome
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H01H2227/024 1 Spacer elements
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H01H2227/026 1 Separate dome contact
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H01H2227/0261 2 with an aperture in contact making centre of dome
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H01H2227/028 1 Key stroke
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H01H2227/03 1 Hardness
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H01H2229/044 1 Injection moulding
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H01H2229/046 2 Multi-colour or double shot injection moulding
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H01H2229/048 2 Insertion moulding
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H01H2229/054 1 CAD
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H01H2231/052 1 Selectors, e.g. dimmers
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H01H2233/00 0 Key modules
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H01H2233/002 1 joined to form button rows
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H01H2233/006 3 Separating individual keys after mounting
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H01H2233/008 1 Laykey mounted on assembled key modules
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H01H2233/012 2 Locating pins
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H01H2233/05 1 Actuator part on body
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H01H2233/052 2 Locating pins
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H01H2233/054 2 Snap coupling
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H01H2233/07 1 Cap or button on actuator part
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H01H2233/072 2 Locating pins
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H01H2233/074 2 Snap coupling
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H01H2233/088 2 connected by spring
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H01H2233/09 1 Actuating striker on actuator part
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H01H2233/092 2 Locating pins
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H01H2233/094 2 Snap coupling
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H01H2233/096 3 with limited freedom
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H01H2233/098 2 One degree of freedom
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H01H2235/00 0 Springs
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H01H2235/002 1 Linear coil spring combined with dome spring
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H01H2235/016 1 Preloading
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H01H2235/024 2 formed by knee or dimple of leaf spring
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H01H2237/00 0 Mechanism between key and laykey
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H01H2239/008 1 Static electricity considerations
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H01H2239/01 1 combined with other elements on the same substrate
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H01H2239/012 2 Decoding impedances
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H01H2239/03 1 Avoiding erroneous switching
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H01H2239/032 1 Anti-tamper
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H01H2239/034 1 Environmental protection
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H01H2239/036 2 Heating, e.g. against condensation
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H01H2239/044 1 High voltage application
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H01H2239/046 1 Getter
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H01H2239/05 1 Mode selector switch, e.g. shift, or indicator
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H01H2239/064 1 Simulating the appearance of touch panel
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H01H2239/066 1 Duplication of control panel, e.g. duplication of some keys
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H01H2239/07 1 UV or IR detection, e.g. of human body
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H01H2239/072 1 High temperature considerations
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H01H2239/074 1 Actuation by finger touch
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H01H2239/076 1 Key stroke generating power
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H01H2239/078 1 Variable resistance by variable contact area or point
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H01H2300/00 0 Orthogonal indexing scheme relating to electric switches, relays, selectors or emergency protective devices covered by H01H
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H01H2300/002 1 Application electric motor braking, e.g. pole reversal of rotor, shorting motor coils, also for field discharge
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H01H2300/004 1 Application hearing aid
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H01H2300/006 1 Application power roofs
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H01H2300/01 1 Application power window
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H01H2300/012 1 Application rear view mirror
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H01H2300/014 1 Application surgical instrument
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H01H2300/016 1 Application timepiece
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H01H2300/018 1 Application transfer; between utility and emergency power supply (circuits in H02J9/04)
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H01H2300/02 1 Application transmission, e.g. for sensing the position of a gear selector or automatic transmission
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H01H2300/022 1 Application wake up; switches or contacts specially provided for the wake up or standby shift of a circuit
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H01H2300/024 1 Avoid unwanted operation
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H01H2300/026 1 Application dead man switch: power must be interrupted on release of operating member
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H01H2300/028 1 Application dead man switch, i.e. power being interrupted by panic reaction of operator, e.g. further pressing down push button
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H01H2300/03 1 Application domotique, e.g. for house automation, bus connected switches, sensors, loads or intelligent wiring
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H01H2300/032 2 using RFID technology in switching devices
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H01H2300/034 1 using magnetic shape memory [MSM] also an austenite-martensite transformation, but then magnetically controlled
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H01H2300/036 1 Application nanoparticles, e.g. nanotubes, integrated in switch components, e.g. contacts, the switch itself being clearly of a different scale, e.g. greater than nanoscale
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H01H2300/038 1 Preselection, i.e. the output of a switch depends on a particular preselection, e.g. a particular position of another switch
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H01H2300/04 1 Programmable interface between a set of switches and a set of functions, e.g. for reconfiguration of a control panel
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H01H2300/042 1 Application rejection, i.e. preventing improper installation of parts
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H01H2300/044 1 Application rejection 1: coded interacting surfaces, polarising, e.g. to avoid insertion of a circuit breaker or fuse or relay or rating plug of the wrong caliber or in the wrong direction
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H01H2300/046 1 using snap closing mechanisms
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H01H2300/048 2 Snap closing by latched movable contact, wherein the movable contact is held in a minimal distance from the fixed contact during first phase of closing sequence in which a closing spring is charged
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H01H2300/05 2 Snap closing with trip, wherein the contacts are locked open during charging of mechanism and unlocked by separate trip device, e.g. manual, electromagnetic etc.
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H01H2300/052 1 Controlling, signalling or testing correct functioning of a switch (see also H01H2300/056 - H01H2300/066 and H01H11/0062)
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H01H2300/054 1 Application timeslot: duration of actuation or delay between or combination of subsequent actuations determines selected function
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H01H2300/056 1 Tools for actuating a switch
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H01H2300/058 2 using apparatus with a spring motor or a snap-acting mechanism for actuating any one of a number of circuit breakers
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H01H2300/06 1 using tools as locking means
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H01H2300/062 2 for locking a charged spring
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H01H2300/064 3 by means of removable member
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H01H2300/066 2 for locking a switch in a test or an "installation" position
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H01J ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; arc lamps with consumable electrodes H05B; particle accelerators H05H)
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H01J1/00 0 Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps (details of electron-optical arrangements or of ion traps H01J3/00)
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H01J1/02 1 Main electrodes
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H01J1/025 2 {Hollow cathodes}
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H01J1/04 2 Liquid electrodes, e.g. liquid cathode
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H01J1/05 3 characterised by material
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H01J1/06 3 Containers for liquid-pool electrodes; Arrangement or mounting thereof
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H01J1/08 3 Positioning or moving the cathode spot on the surface of a liquid-pool cathode
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H01J1/10 3 Cooling, heating, circulating, filtering, or controlling level of liquid in a liquid-pool electrode
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H01J1/12 2 Cathodes having mercury or liquid alkali metal deposited on the cathode surface during operation of the tube
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H01J1/13 2 Solid thermionic cathodes
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H01J1/135 3 {Circuit arrangements therefor, e.g. for temperature control}
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H01J1/14 3 characterised by the material
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H01J1/142 4 with alkaline-earth metal oxides, or such oxides used in conjunction with reducing agents, as an emissive material
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H01J1/144 4 with other metal oxides as an emissive material
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H01J1/146 4 with metals or alloys as an emissive material
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H01J1/148 4 with compounds having metallic conductive properties, e.g. lanthanum boride, as an emissive material
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H01J1/15 3 Cathodes heated directly by an electric current
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H01J1/16 4 characterised by the shape
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H01J1/18 4 Supports; Vibration-damping arrangements
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H01J1/20 3 Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
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H01J1/22 4 Heaters
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H01J1/24 4 Insulating layer or body located between heater and emissive material
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H01J1/26 4 Supports for the emissive material
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H01J1/28 4 Dispenser-type cathodes, e.g. L-cathode
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H01J1/30 2 Cold cathodes, e.g. field-emissive cathode
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H01J1/304 3 Field-emissive cathodes
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H01J1/3042 4 {microengineered, e.g. Spindt-type}
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H01J1/3044 5 {Point emitters}
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H01J1/3046 5 {Edge emitters}
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H01J1/3048 4 {Distributed particle emitters}
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H01J1/308 3 Semiconductor cathodes, e.g. cathodes with PN junction layers
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H01J1/312 3 having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type {(H01J1/304 - H01J1/308 take precedence)}
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H01J1/316 3 having an electric field parallel to the surface, e.g. thin film cathodes
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H01J1/32 2 Secondary-electron-emitting electrodes (H01J1/35 takes precedence)
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H01J1/34 2 Photo-emissive cathodes (H01J1/35 takes precedence)
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H01J1/35 2 Electrodes exhibiting both secondary emission and photo-emission
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H01J1/36 2 Solid anodes; Solid auxiliary anodes for maintaining a discharge
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H01J1/38 3 characterised by the material
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H01J1/40 3 forming part of the envelope of the tube or lamp
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H01J1/42 3 Cooling of anodes (cooling rotary anodes H01J1/44); Heating of anodes
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H01J1/44 3 Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
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H01J1/46 1 Control electrodes, e.g. grid (for igniting arrangements H01J7/30); Auxiliary electrodes (auxiliary anodes for maintaining a discharge H01J1/36)
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H01J1/48 2 characterised by the material
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H01J1/50 1 Magnetic means for controlling the discharge
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H01J1/52 1 Screens for shielding; Guides for influencing the discharge; Masks interposed in the electron stream
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H01J1/53 1 Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted, or stored
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H01J1/54 1 Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
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H01J1/56 2 acting as light valves by shutter operation, e.g. for eidophor
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H01J1/58 2 acting by discolouration, e.g. halide screen
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H01J1/60 2 Incandescent screens
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H01J1/62 2 Luminescent screens; Selection of materials for luminescent coatings on vessels
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H01J1/63 3 characterised by the luminescent material
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H01J1/64 3 characterised by the binder or adhesive for securing the luminescent material to its support
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H01J1/66 3 Supports for luminescent material
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H01J1/68 3 with superimposed luminescent layers
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H01J1/70 3 with protective, conductive, or reflective layers
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H01J1/72 3 with luminescent material discontinuously arranged, e.g. in dots or lines
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H01J1/74 4 with adjacent dots or lines of different luminescent material
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H01J1/76 3 provided with permanent marks or references
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H01J1/78 2 Photoelectric screens; Charge-storage screens
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H01J1/88 1 Mounting, supporting, spacing, or insulating of electrodes or of electrode assemblies
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H01J1/90 2 Insulation between electrodes or supports within the vacuum space
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H01J1/92 2 Mountings for the electrode assembly as a whole
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H01J1/94 2 Mountings for individual electrodes
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H01J1/96 2 Spacing members extending to the envelope
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H01J1/98 3 without fixed connection between spacing member and envelope
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H01J3/00 0 Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
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H01J3/02 1 Electron guns
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H01J3/021 2 {Electron guns using a field emission, photo emission, or secondary emission electron source}
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H01J3/022 3 {with microengineered cathode, e.g. Spindt-type}
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H01J3/023 2 {Electron guns using electron multiplication}
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H01J3/024 2 {Electron guns using thermionic emission of cathode heated by electron or ion bombardment or by irradiation by other energetic beams, e.g. by laser}
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H01J3/025 2 {Electron guns using a discharge in a gas or a vapour as electron source (gas-filled discharge tubes with gaseous cathodes H01J15/00)}
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H01J3/026 2 {Eliminating deleterious effects due to thermal effects, electric or magnetic field (H01J3/021 - H01J3/025 take precedence)}
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H01J3/027 2 {Construction of the gun or parts thereof (H01J3/021 - H01J3/025, H01J3/026 and H01J3/028 take precedence)}
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H01J3/028 2 {Replacing parts of the gun; Relative adjustment (H01J3/021 - H01J3/025 take precedence)}
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H01J3/029 2 {Schematic arrangements for beam forming}
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H01J3/04 1 Ion guns
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H01J3/06 1 two or more guns being arranged in a single vacuum space, e.g. for plural-ray tubes (H01J3/07 takes precedence)
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H01J3/07 1 Arrangements for controlling convergence of a plurality of beams
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H01J3/08 1 Arrangements for controlling intensity of ray or beam (H01J3/02, H01J3/04 take precedence)
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H01J3/10 1 Arrangements for centring ray or beam (H01J3/02, H01J3/04 take precedence)
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H01J3/12 1 Arrangements for controlling cross-section of ray or beam; Arrangements for correcting aberration of beam, e.g. due to lenses (H01J3/02, H01J3/04 take precedence)
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H01J3/14 1 Arrangements for focusing or reflecting ray or beam (H01J3/02, H01J3/04 take precedence)
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H01J3/16 2 Mirrors
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H01J3/18 2 Electrostatic lenses
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H01J3/20 2 Magnetic lenses
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H01J3/22 3 using electromagnetic means only
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H01J3/24 3 using permanent magnets only
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H01J3/26 1 Arrangements for deflecting ray or beam
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H01J3/28 2 along one straight line or along two perpendicular straight lines
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H01J3/30 3 by electric fields only
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H01J3/32 3 by magnetic fields only
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H01J3/34 2 along a circle, spiral, or rotating radial line
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H01J3/36 1 Arrangements for controlling the ray or beam after passing the main deflection system, e.g. for post-acceleration or post-concentration
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H01J3/38 1 Mounting, supporting, spacing, or insulating electron-optical or ion-optical arrangements
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H01J3/40 1 Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection {(see provisionally also H01J29/46 - H01J29/84)}
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H01J5/00 0 Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
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H01J5/02 1 Vessels; Containers; Shields associated therewith; Vacuum locks
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H01J5/03 2 Arrangements for preventing or mitigating effects of implosion of vessels or containers
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H01J5/04 2 Vessels or containers characterised by the material thereof
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H01J5/06 2 Vessels or containers specially adapted for operation at high tension, e.g. by improved potential distribution over surface of vessel
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H01J5/08 2 provided with coatings on the walls thereof; Selection of materials for the coatings (luminescent coatings H01J1/62)
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H01J5/10 3 on internal surfaces
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H01J5/12 2 Double-wall vessels or containers
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H01J5/125 3 {with a gas tight space between both walls}
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H01J5/14 2 Dismountable vessels or containers, e.g. for replacing cathode heater
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H01J5/16 2 Optical or photographic arrangements structurally combined with the vessel
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H01J5/18 2 Windows permeable to X-rays, gamma-rays, or particles
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H01J5/20 1 Seals between parts of vessels
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H01J5/22 2 Vacuum-tight joints between parts of vessel
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H01J5/24 3 between insulating parts of vessel
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H01J5/26 3 between insulating and conductive parts of vessel
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H01J5/28 3 between conductive parts of vessel
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H01J5/30 3 using packing-material, e.g. sealing-liquid or elastic insert
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H01J5/32 1 Seals for leading-in conductors
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H01J5/34 2 for an individual conductor (pinched-stem seals H01J5/38; end-disc seals H01J5/40; annular seals H01J5/44)
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H01J5/36 3 using intermediate part
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H01J5/38 2 Pinched-stem or analogous seals
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H01J5/40 2 End-disc seals, e.g. flat header
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H01J5/42 3 using intermediate part
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H01J5/44 2 Annular seals disposed between the ends of the vessel
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H01J5/46 1 Leading-in conductors
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H01J5/48 1 Means forming part of the tube or lamp for the purpose of supporting it
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H01J5/50 1 Means forming part of the tube or lamps for the purpose of providing electrical connection to it
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H01J5/52 2 directly applied to or forming part of the vessel
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H01J5/54 2 supported by a separate part, e.g. base
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H01J5/56 3 Shape of the separate part
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H01J5/565 4 {Bases for circular lamps}
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H01J5/58 3 Means for fastening the separate part to the vessel, e.g. by cement
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H01J5/60 4 for fastening by mechanical means
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H01J5/62 3 Connection of wires protruding from the vessel to connectors carried by the separate part
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H01J7/00 0 Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
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H01J7/02 1 Selection of substances for gas fillings; Specified operating pressure or temperature
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H01J7/04 2 having one or more carbon compounds as the principal constituent
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H01J7/06 2 having helium, argon, neon, krypton, or xenon as the principal constituent
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H01J7/08 2 having a metallic vapour as the principal constituent
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H01J7/10 3 mercury vapour
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H01J7/12 3 vapour of an alkali metal
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H01J7/14 1 Means for obtaining or maintaining the desired pressure within the vessel
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H01J7/16 2 Means for permitting pumping during operation of the tube or lamp
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H01J7/18 2 Means for absorbing or adsorbing gas, e.g. by gettering
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H01J7/183 3 {Composition or manufacture of getters}
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H01J7/186 3 {Getter supports}
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H01J7/20 2 Means for producing, introducing, or replenishing gas or vapour during operation of the tube or lamp
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H01J7/22 2 Tubulations therefor, e.g. for exhausting; Closures therefor
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H01J7/24 1 Cooling arrangements; Heating arrangements; Means for circulating gas or vapour within the discharge space
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H01J7/26 2 by flow of fluid through passages associated with tube or lamp
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H01J7/28 2 by latent heat or evaporation of cooling liquid
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H01J7/30 1 Igniting arrangements
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H01J7/32 2 having resistive or capacitative igniter
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H01J7/34 3 having resistive igniter only
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H01J7/36 2 Igniting by movement of a solid electrode
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H01J7/38 2 Igniting by movement of vessel as a whole, e.g. tilting
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H01J7/40 2 Igniting by associated radioactive materials or fillings
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H01J7/42 1 Means structurally associated with the tube or lamp for indicating defects or previous use
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H01J7/44 1 One or more circuit elements structurally associated with the tube or lamp
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H01J7/46 2 Structurally associated resonator having distributed inductance and capacitance
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H01J9/00 0 Apparatus or processes specially adapted for the manufacture {, installation, removal, maintenance} of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
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H01J9/003 1 {Auxiliary devices for installing or removing discharge tubes or lamps}
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H01J9/006 2 {for fluorescent lamps}
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H01J9/02 1 Manufacture of electrodes or electrode systems
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H01J9/022 2 {of cold cathodes}
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H01J9/025 3 {of field emission cathodes}
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H01J9/027 3 {of thin film cathodes}
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H01J9/04 2 of thermionic cathodes
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H01J9/042 3 {Manufacture, activation of the emissive part}
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H01J9/045 4 {Activation of assembled cathode}
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H01J9/047 4 {Cathodes having impregnated bodies (H01J9/045 takes precedence)}
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H01J9/06 3 Machines therefor
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H01J9/08 2 Manufacture of heaters for indirectly-heated cathodes
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H01J9/10 3 Machines therefor
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H01J9/12 2 of photo-emissive cathodes; of secondary-emission electrodes
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H01J9/125 3 {of secondary emission electrodes}
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H01J9/14 2 of non-emitting electrodes
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H01J9/142 3 {of shadow-masks for colour television tubes}
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H01J9/144 4 {Mask treatment related to the process of dot deposition during manufacture of luminescent screen}
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H01J9/146 4 {Surface treatment, e.g. blackening, coating (H01J9/144 takes precedence)}
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H01J9/148 3 {of electron emission flat panels, e.g. gate electrodes, focusing electrodes or anode electrodes}
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H01J9/16 3 Machines for making wire grids
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H01J9/18 2 Assembling together the component parts of electrode systems
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H01J9/185 3 {of flat panel display devices, e.g. by using spacers}
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H01J9/20 1 Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
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H01J9/205 2 {Applying optical coatings or shielding coatings to the vessel of flat panel displays, e.g. applying filter layers, electromagnetic interference shielding layers, anti-reflection coatings or anti-glare coatings}
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H01J9/22 2 Applying luminescent coatings
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H01J9/221 3 {in continuous layers}
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H01J9/222 4 {constituted by coated granules emitting light of different colour}
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H01J9/223 4 {by uniformly dispersing of liquid}
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H01J9/224 4 {by precipitation}
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H01J9/225 4 {by electrostatic or electrophoretic processes}
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H01J9/227 3 with luminescent material discontinuously arranged, e.g. in dots or lines
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H01J9/2271 4 {by photographic processes (final treatment of shadow-mask prior to or after dot deposition H01J9/144)}
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H01J9/2272 5 {Devices for carrying out the processes, e.g. light houses}
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H01J9/2273 6 {Auxiliary lenses and filters}
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H01J9/2274 6 {Light sources particularly adapted therefor}
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H01J9/2275 4 {including the exposition of a substance responsive to a particular radiation}
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H01J9/2276 4 {Development of latent electrostatic images (per se G03G15/06)}
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H01J9/2277 4 {by other processes, e.g. serigraphy, decalcomania}
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H01J9/2278 4 {Application of light absorbing material, e.g. between the luminescent areas}
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H01J9/233 2 Manufacture of photoelectric screens or charge-storage screens
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H01J9/236 1 Manufacture of magnetic deflecting devices for cathode-ray tubes
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H01J9/24 1 Manufacture or joining of vessels, leading-in conductors or bases
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H01J9/241 2 {the vessel being for a flat panel display (H01J9/261 takes precedence; flat discharge lamps H01J9/248)}
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H01J9/242 3 {Spacers between faceplate and backplate}
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H01J9/244 2 {specially adapted for cathode ray tubes (H01J9/241, H01J9/26 take precedence)}
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H01J9/245 2 {specially adapted for gas discharge tubes or lamps (H01J9/241, H01J9/26 take precedence)}
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H01J9/247 3 {specially adapted for gas-discharge lamps}
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H01J9/248 4 {the vessel being flat}
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H01J9/26 2 Sealing together parts of vessels
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H01J9/261 3 {the vessel being for a flat panel display (for flat discharge lamps H01J9/268)}
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H01J9/263 3 {specially adapted for cathode-ray tubes (H01J9/261 takes precedence)}
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H01J9/265 3 {specially adapted for gas-discharge tubes or lamps (H01J9/261 takes precedence)}
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H01J9/266 4 {specially adapted for gas-discharge lamps}
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H01J9/268 5 {the vessel being flat}
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H01J9/28 2 Manufacture of leading-in conductors
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H01J9/30 2 Manufacture of bases
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H01J9/32 2 Sealing leading-in conductors
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H01J9/323 3 {Sealing leading-in conductors into a discharge lamp or a gas-filled discharge device}
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H01J9/326 4 {making pinched-stem or analogous seals}
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H01J9/34 2 Joining base to vessel
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H01J9/36 2 Joining connectors to internal electrode system
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H01J9/38 1 Exhausting, degassing, filling, or cleaning vessels
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H01J9/385 2 Exhausting vessels
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H01J9/39 2 Degassing vessels
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H01J9/395 2 Filling vessels
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H01J9/40 1 Closing vessels
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H01J9/42 1 Measurement or testing during manufacture
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H01J9/44 1 Factory adjustment of completed discharge tubes or lamps to comply with desired tolerances
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H01J9/445 2 {Aging of tubes or lamps, e.g. by "spot knocking" (cathode activation H01J9/045)}
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H01J9/46 1 Machines having sequentially arranged operating stations
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H01J9/48 2 with automatic transfer of workpieces between operating stations
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H01J9/50 1 Repairing or regenerating used or defective discharge tubes or lamps
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H01J9/505 2 {Regeneration of cathodes}
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H01J9/52 1 Recovery of material from discharge tubes or lamps (H01J9/50 takes precedence)
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H01J11/00 0 Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP] (circuits or methods for driving PDPs G09G3/28); Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
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H01J11/10 1 AC-PDPs with at least one main electrode being out of contact with the plasma
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H01J11/12 2 with main electrodes provided on both sides of the discharge space
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H01J11/14 2 with main electrodes provided only on one side of the discharge space
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H01J11/16 2 with main electrodes provided inside or on the side face of the spacers
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H01J11/18 2 containing a plurality of independent closed structures for containing the gas, e.g. plasma tube array [PTA] display panels
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H01J11/20 1 Constructional details
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H01J11/22 2 Electrodes, e.g. special shape, material or configuration
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H01J11/24 3 Sustain electrodes or scan electrodes
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H01J11/26 3 Address electrodes
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H01J11/28 3 Auxiliary electrodes, e.g. priming electrodes or trigger electrodes
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H01J11/30 3 Floating electrodes
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H01J11/32 3 Disposition of the electrodes
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H01J11/34 2 Vessels, containers or parts thereof, e.g. substrates
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H01J11/36 3 Spacers, barriers, ribs, partitions or the like
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H01J11/38 3 Dielectric or insulating layers
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H01J11/40 3 Layers for protecting or enhancing the electron emission, e.g. MgO layers
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H01J11/42 3 Fluorescent layers
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H01J11/44 3 Optical arrangements or shielding arrangements, e.g. filters, black matrices, light reflecting means or electromagnetic shielding means
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H01J11/46 2 Connecting or feeding means, e.g. leading-in conductors
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H01J11/48 2 Sealing, e.g. seals specially adapted for leading-in conductors
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H01J11/50 2 Filling, e.g. selection of gas mixture
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H01J11/52 2 Means for absorbing or adsorbing the gas mixture, e.g. by gettering
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H01J11/54 2 Means for exhausting the gas
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H01J13/00 0 Discharge tubes with liquid-pool cathodes, e.g. metal-vapour rectifying tubes
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H01J13/02 1 Details
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H01J13/04 2 Main electrodes; Auxiliary anodes
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H01J13/06 3 Cathodes
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H01J13/08 4 characterised by the material
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H01J13/10 4 Containers for the liquid pool; Arrangements or mounting thereof
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H01J13/12 4 Positioning or moving the cathode spot on the surface of the pool
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H01J13/14 4 Cooling, heating, circulating, filtering, or controlling level of the liquid
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H01J13/16 3 Anodes; Auxiliary anodes for maintaining the discharge
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H01J13/18 4 Cooling or heating of anodes
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H01J13/20 2 Control electrodes, e.g. grid (for igniting arrangements H01J13/34)
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H01J13/22 2 Screens, e.g. for preventing or eliminating arcing-back
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H01J13/24 2 Vessels; Containers
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H01J13/242 3 {characterised by the material}
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H01J13/244 3 {characterised by the shape}
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H01J13/246 3 {Treatment of, or coating on interior parts of vessel}
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H01J13/248 3 {Envelope means outside vessel, i.e. screens, reflectors, filters}
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H01J13/26 2 Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
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H01J13/263 3 {Leading-in conductors to the liquid electrode}
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H01J13/266 3 {Leading-in conductors to the anode}
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H01J13/28 2 Selection of substances for gas filling; Means for obtaining the desired pressure within the tube
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H01J13/30 3 Means for permitting pumping during operation of the tube
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H01J13/32 2 Cooling arrangements; Heating arrangements (for cathodes H01J13/14; for anodes H01J13/18)
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H01J13/34 2 Igniting arrangements
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H01J13/36 3 having resistive or capacitative igniter
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H01J13/38 4 having resistive igniter only
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H01J13/40 3 Igniting by movement of a solid electrode
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H01J13/405 4 {Interrupting contact with liquid cathode}
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H01J13/42 3 Igniting by movement of vessel as a whole, e.g. tilting
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H01J13/44 2 Devices for preventing or eliminating arcing-back
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H01J13/46 2 One or more circuit elements structurally associated with the tube
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H01J13/48 2 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J13/50 1 Tubes having a single main anode
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H01J13/52 2 with control by one or more intermediate control electrodes
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H01J13/54 2 with control by igniter, e.g. single-anode ignitron
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H01J13/56 1 Tubes having two or more main anodes
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H01J13/58 2 with control by one or more intermediate control electrodes
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H01J15/00 0 Gas-filled discharge tubes with gaseous cathodes, e.g. plasma cathode
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H01J15/02 1 Details, e.g. electrode, gas filling, shape of vessel
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H01J15/04 2 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J17/00 0 Gas-filled discharge tubes with solid cathode (H01J25/00, H01J27/00, H01J31/00 - H01J41/00 {, H01J11/00} take precedence; gas filled spark gaps H01T; Marx converters H02M7/26)
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H01J17/005 1 {specially adapted as noise generators (electronic circuits for generation of noise currents or voltages H03B29/00)}
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H01J17/02 1 Details
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H01J17/04 2 Electrodes; Screens
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H01J17/06 3 Cathodes
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H01J17/063 4 {Indirectly heated cathodes, e.g. by the discharge itself}
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H01J17/066 4 {Cold cathodes}
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H01J17/08 4 having mercury or liquid alkali metal deposited on the cathode surface during operation of the tube
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H01J17/10 3 Anodes
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H01J17/12 3 Control electrodes
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H01J17/14 2 Magnetic means for controlling the discharge
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H01J17/16 2 Vessels; Containers
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H01J17/18 2 Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
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H01J17/183 3 {Seals between parts of vessel}
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H01J17/186 3 {Seals between leading-in conductors and vessel}
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H01J17/20 2 Selection of substances for gas fillings; Specified operating pressures or temperatures
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H01J17/22 2 Means for obtaining or maintaining the desired pressure within the tube
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H01J17/24 3 Means for absorbing or adsorbing gas, e.g. by gettering
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H01J17/26 3 Means for producing, introducing, or replenishing gas or vapour during operation of the tube
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H01J17/28 2 Cooling arrangements
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H01J17/30 2 Igniting arrangements
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H01J17/32 3 Igniting by associated radioactive materials or fillings
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H01J17/325 4 {Current stabilising tubes, e.g. curpistors}
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H01J17/34 2 One or more circuit elements structurally associated with the tube
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H01J17/36 2 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J17/38 1 Cold-cathode tubes
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H01J17/40 2 with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes, (cathode-glow lamps H01J61/04)
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H01J17/42 3 having one or more probe electrodes, e.g. for potential dividing
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H01J17/44 3 having one or more control electrodes
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H01J17/46 4 for preventing and then permitting ignition but thereafter having no control
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H01J17/48 2 with more than one cathode or anode, e.g. sequence-discharge tube, counting tube, dekatron
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H01J17/485 3 {Plasma addressed liquid crystal displays [PALC]}
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H01J17/49 3 Display panels, e.g. with crossed electrodes {, e.g. making use of direct current (display panels making use of alternating current H01J11/00)}
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H01J17/491 4 {with electrodes arranged side by side and substantially in the same plane, e.g. for displaying alphanumeric characters}
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H01J17/492 4 {with crossed electrodes}
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H01J17/494 5 {using sequential transfer of the discharges, e.g. of the self-scan type (addressing circuits therefor G09G3/29)}
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H01J17/495 6 {display panels using sequential transfer of the discharge along dielectric storage elements}
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H01J17/497 5 {for several colours}
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H01J17/498 4 {with a gas discharge space and a post acceleration space for electrons}
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H01J17/50 1 Thermionic-cathode tubes
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H01J17/52 2 with one cathode and one anode
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H01J17/54 3 having one or more control electrodes
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H01J17/56 4 for preventing and then permitting ignition, but thereafter having no control
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H01J17/58 2 with more than one cathode or anode
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H01J17/60 3 the discharge paths priming each other in a predetermined sequence, e.g. counting tube
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H01J17/62 3 with independent discharge paths controlled by intermediate electrodes, e.g. polyphase rectifier
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H01J17/64 1 Tubes specially designed for switching or modulating in a waveguide, e.g. TR box
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H01J19/00 0 Details of vacuum tubes of the types covered by group H01J21/00
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H01J19/02 1 Electron-emitting electrodes; Cathodes
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H01J19/04 2 Thermionic cathodes
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H01J19/06 3 characterised by the material
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H01J19/062 4 with alkaline-earth metal oxides, or such oxides used in conjunction with reducing agents, as an emissive material
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H01J19/064 4 with other metal oxides as an emissive material
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H01J19/066 4 with metals or alloys as an emissive material
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H01J19/068 4 with compounds having metallic conductive properties, e.g. lanthanum boride, as an emissive material
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H01J19/08 3 Cathodes heated directly by an electric current
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H01J19/10 3 characterised by the shape
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H01J19/12 4 Supports; Vibration-damping arrangements
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H01J19/14 3 Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
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H01J19/16 4 Heaters
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H01J19/18 4 Insulating layer or body located between heater and emissive material
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H01J19/20 4 Supports for the emissive material
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H01J19/22 4 Dispenser-type cathodes, e.g. L-cathode
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H01J19/24 2 Cold cathodes, e.g. field-emissive cathode
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H01J19/28 1 Non-electron-emitting electrodes; Screens
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H01J19/30 2 characterised by the material
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H01J19/32 2 Anodes
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H01J19/34 3 forming part of the envelope
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H01J19/36 3 Cooling of anodes
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H01J19/38 2 Control electrodes, e.g. grid
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H01J19/40 2 Screens for shielding
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H01J19/42 1 Mounting, supporting, spacing, or insulating of electrodes or of electrode assemblies
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H01J19/44 2 Insulation between electrodes or supports within the vacuum space
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H01J19/46 2 Mountings for the electrode assembly as a whole
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H01J19/48 2 Mountings for individual electrodes
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H01J19/50 2 Spacing members extending to the envelope
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H01J19/52 3 without fixed connection between spacing member and envelope
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H01J19/54 1 Vessels; Containers; Shields associated therewith
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H01J19/56 2 characterised by the material of the vessel or container
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H01J19/57 2 provided with coatings on the walls thereof; Selection of materials for the coatings
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H01J19/58 1 Seals between parts of vessels
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H01J19/60 1 Seals for leading-in conductors
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H01J19/62 1 Leading-in conductors
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H01J19/64 1 Means forming part of the tube for the purpose supporting it
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H01J19/66 1 Means forming part of the tube for the purpose of providing electrical connection to it {(H01J5/46 - H01J5/62 take precedence)}
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H01J19/68 1 Specified gas introduced into the tube at low pressure, e.g. for reducing or influencing space charge
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H01J19/70 1 Means for obtaining or maintaining the vacuum, e.g. by gettering
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H01J19/72 2 Tubulations therefor, e.g. for exhausting; Closures therefor
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H01J19/74 1 Cooling arrangements (cooling of anodes H01J19/36)
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H01J19/76 1 Means structurally associated with the tube for indicating defects or previous use
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H01J19/78 1 One or more circuit elements structurally associated with the tube
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H01J19/80 2 Structurally associated resonator having distributed inductance and capacitance
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H01J19/82 1 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J21/00 0 Vacuum tubes (H01J25/00, H01J31/00 - H01J40/00, H01J43/00, H01J47/00, H01J49/00 take precedence; details of vacuum tubes H01J19/00)
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H01J21/02 1 Tubes with a single discharge path
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H01J21/04 2 without control means, i.e. diodes
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H01J21/06 2 having electrostatic control means only
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H01J21/065 3 {Devices for short wave tubes}
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H01J21/08 3 with movable electrode or electrodes
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H01J21/10 3 with one or more immovable internal control electrodes, e.g. triode, pentode, octode
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H01J21/105 4 {with microengineered cathode and control electrodes, e.g. Spindt-type}
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H01J21/12 4 Tubes with variable amplification factor
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H01J21/14 4 Tubes with means for concentrating the electron stream, e.g. beam tetrode
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H01J21/16 3 with external electrostatic control means and with or without internal control electrodes
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H01J21/18 2 having magnetic control means; having both magnetic and electrostatic control means
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H01J21/20 1 Tubes with more than one discharge path; Multiple tubes, e.g. double diode, triode-hexode
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H01J21/22 2 with movable electrode or electrodes
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H01J21/24 2 with variable amplification factor
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H01J21/26 2 with means for concentrating the electron stream
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H01J21/34 1 Tubes with electrode system arranged or dimensioned so as to eliminate transit-time effect (with flat electrodes H01J21/36)
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H01J21/36 1 Tubes with flat electrodes, e.g. disc electrode
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H01J23/00 0 Details of transit-time tubes of the types covered by group H01J25/00
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H01J23/005 1 {Cooling methods or arrangements (H01J23/033 takes precedence)}
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H01J23/02 1 Electrodes; Magnetic control means; Screens (associated with resonator or delay system H01J23/16)
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H01J23/027 2 Collectors
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H01J23/0275 3 {Multistage collectors}
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H01J23/033 3 Collector cooling devices
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H01J23/04 2 Cathodes
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H01J23/05 3 having a cylindrical emissive surface, e.g. cathodes for magnetrons
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H01J23/06 2 Electron or ion guns
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H01J23/065 3 producing a solid cylindrical beam (H01J23/075 takes precedence)
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H01J23/07 3 producing a hollow cylindrical beam (H01J23/075 takes precedence)
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H01J23/075 3 Magnetron injection guns
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H01J23/08 2 Focusing arrangements, e.g. for concentrating stream of electrons, for preventing spreading of stream
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H01J23/083 3 Electrostatic focusing arrangements
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H01J23/087 3 Magnetic focusing arrangements
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H01J23/0873 4 {with at least one axial-field reversal along the interaction space, e.g. P.P.M. focusing}
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H01J23/0876 4 {with arrangements improving the linearity and homogeniety of the axial field, e.g. field straightener}
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H01J23/09 2 Electric systems for directing or deflecting the discharge along a desired path, e.g. E-type (focusing arrangements H01J23/08)
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H01J23/10 2 Magnet systems for directing or deflecting the discharge along a desired path, e.g. a spiral path (magnetic focusing arrangements H01J23/08)
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H01J23/11 2 Means for reducing noise (in electron or ion gun H01J23/06)
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H01J23/12 1 Vessels; Containers
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H01J23/14 1 Leading-in arrangements; Seals therefor
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H01J23/15 2 Means for preventing wave energy leakage structurally associated with tube leading-in arrangements, e.g. filters, chokes, attenuating devices
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H01J23/16 1 Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
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H01J23/165 2 {Manufacturing processes or apparatus therefore}
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H01J23/18 2 Resonators
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H01J23/20 3 Cavity resonators; Adjustment or tuning thereof
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H01J23/207 4 Tuning of single resonator
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H01J23/213 4 Simultaneous tuning of more than one resonator, e.g. resonant cavities of a magnetron
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H01J23/22 3 Connections between resonators, e.g. strapping for connecting resonators of a magnetron
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H01J23/24 2 Slow-wave structures {, e.g. delay systems}
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H01J23/26 3 Helical slow-wave structures; Adjustment therefor
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H01J23/27 4 Helix-derived slow-wave structures
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H01J23/28 3 Interdigital slow-wave structures; Adjustment therefor
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H01J23/30 3 Damping arrangements associated with slow-wave structures, e.g. for suppression of unwanted oscillations
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H01J23/34 1 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J23/36 1 Coupling devices having distributed capacitance and inductance, structurally associated with the tube, for introducing or removing wave energy
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H01J23/38 2 to or from the discharge
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H01J23/40 2 to or from the interaction circuit
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H01J23/42 3 the interaction circuit being a helix or a helix-derived slow-wave structure (H01J23/44 - H01J23/48 take precedence)
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H01J23/44 3 Rod-type coupling devices (H01J23/46, H01J23/48, H01J23/54 take precedence)
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H01J23/46 3 Loop coupling devices
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H01J23/48 3 for linking interaction circuit with coaxial lines; Devices of the coupled helices type (H01J23/46 takes precedence)
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H01J23/50 4 the interaction circuit being a helix or derived from a helix (H01J23/52 takes precedence)
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H01J23/52 4 the coupled helices being disposed coaxially around one another
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H01J23/54 2 Filtering devices preventing unwanted frequencies or modes to be coupled to, or out of, the interaction circuit; Prevention of high frequency leakage in the environment
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H01J25/00 0 Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons (details of transit-time tubes H01J23/00; particle accelerators H05H)
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H01J25/005 1 {Gas-filled transit-time tubes}
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H01J25/02 1 Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
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H01J25/025 2 {with an electron stream following a helical path}
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H01J25/04 2 Tubes having one or more resonators, without reflection of the electron stream, and in which the modulation produced in the modulator zone is mainly density modulation, e.g. Heaff tube
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H01J25/06 2 Tubes having only one resonator, without reflection of the electron stream, and in which the modulation produced in the modulator zone is mainly velocity modulation, e.g. Lüdi-Klystron
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H01J25/08 3 with electron stream perpendicular to the axis of the resonator
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H01J25/10 2 Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
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H01J25/11 3 Extended interaction klystrons
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H01J25/12 3 with pencil-like electron stream in the axis of the resonators
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H01J25/14 3 with tube-like electron stream coaxial with the axis of the resonators
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H01J25/16 3 with pencil-like electron stream perpendicular to the axis of the resonators
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H01J25/18 3 with radial or disc-like electron stream perpendicular to the axis of the resonators
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H01J25/20 3 having special arrangements in the space between resonators, e.g. resistive-wall amplifier tube, space-charge amplifier tube, velocity-jump tube
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H01J25/22 2 Reflex klystrons, i.e. tubes having one or more resonators, with a single reflection of the electron stream, and in which the stream is modulated mainly by velocity in the modulator zone
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H01J25/24 3 in which the electron stream is in the axis of the resonator or resonators and is pencil-like before reflection
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H01J25/26 3 in which the electron stream is coaxial with the axis of the resonator or resonators and is tube-like before reflection
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H01J25/28 3 in which the electron stream is perpendicular to the axis of the resonator or resonators and is pencil-like before reflection
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H01J25/30 3 in which the electron stream is perpendicular to the axis of the resonator or resonators and is radial or disc-like before reflection
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H01J25/32 2 Tubes with plural reflection, e.g. Coeterier tube
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H01J25/34 1 Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
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H01J25/36 2 Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and without magnet system producing an H-field crossing the E-field
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H01J25/38 3 the forward travelling wave being utilised
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H01J25/40 3 the backward travelling wave being utilised
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H01J25/42 2 Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field (with travelling wave moving completely around the electron space H01J25/50)
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H01J25/44 3 the forward travelling wave being utilised
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H01J25/46 3 the backward travelling wave being utilised
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H01J25/48 2 Tubes in which two electron streams of different velocities interact with one another, e.g. electron-wave tube
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H01J25/49 2 Tubes using the parametric principle, e.g. for parametric amplification
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H01J25/50 1 Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field (with travelling wave not moving completely around the electron space H01J25/42; functioning with plural reflection or with reversed cyclotron action H01J25/62, H01J25/64)
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H01J25/52 2 with an electron space having a shape that does not prevent any electron from moving completely around the cathode or guide electrode
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H01J25/54 3 having only one cavity or other resonator, e.g. neutrode tubes
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H01J25/55 4 Coaxial cavity magnetrons
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H01J25/56 4 with interdigital arrangements of anodes, e.g. turbator tube
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H01J25/58 3 having a number of resonators; having a composite resonator, e.g. a helix
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H01J25/587 4 Multi-cavity magnetrons
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H01J25/593 5 Rising-sun magnetrons
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H01J25/60 2 with an electron space having a shape that prevents any electron from moving completely around the cathode or guide electrode; Linear magnetrons
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H01J25/61 1 Hybrid tubes, i.e. tubes comprising a klystron section and a travelling-wave section
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H01J25/62 1 Strophotrons, i.e. tubes with H-field crossing the E-field and functioning with plural reflection
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H01J25/64 1 Turbine tubes, i.e. tubes with H-field crossing the E-field and functioning with reversed cyclotron action
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H01J25/66 1 Tubes with electron stream crossing itself and thereby interacting or interfering with itself
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H01J25/68 1 Tubes specially designed to act as oscillator with positive grid and retarding field, e.g. for Barkhausen-Kurz oscillators (with secondary emission H01J25/76)
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H01J25/70 2 with resonator having distributed inductance with capacitance, e.g. Pintsch tube
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H01J25/72 2 in which a standing wave or a considerable part thereof is produced along an electrode, e.g. Clavier tube (with resonator having distributed inductance and capacitance H01J25/70)
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H01J25/74 1 Tubes specially designed to act as transit-time diode oscillators, e.g. monotrons
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H01J25/76 1 Dynamic electron-multiplier tubes, e.g. Farnsworth multiplier tube, multipactor
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H01J25/78 1 Tubes with electron stream modulated by deflection in a resonator
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H01J27/00 0 Ion beam tubes (H01J25/00, H01J33/00, H01J37/00 take precedence; particle accelerators H05H)
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H01J27/02 1 Ion sources; Ion guns {(for examination or processing discharge tubes H01J37/08; ion sources, ion guns for particle spectrometer or separator tubes H01J49/10; ion propulsion F03H1/00)}
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H01J27/022 2 {Details}
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H01J27/024 3 {Extraction optics, e.g. grids}
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H01J27/026 2 {Cluster ion sources}
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H01J27/028 2 {Negative ion sources}
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H01J27/04 2 using reflex discharge, e.g. Penning ion sources {(electron bombardment ion sources H01J27/08)}
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H01J27/06 3 without applied magnetic field
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H01J27/08 2 using arc discharge
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H01J27/10 3 Duoplasmatrons {; Duopigatrons}
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H01J27/12 4 provided with an expansion cup
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H01J27/14 3 Other arc discharge ion sources using an applied magnetic field
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H01J27/143 4 {Hall-effect ion sources with closed electron drift}
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H01J27/146 4 {End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder}
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H01J27/16 2 using high-frequency excitation, e.g. microwave excitation
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H01J27/18 3 with an applied axial magnetic field
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H01J27/20 2 using particle {beam} bombardment, e.g. ionisers
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H01J27/205 3 {with electrons, e.g. electron impact ionisation, electron attachment}
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H01J27/22 3 Metal ion sources
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H01J27/24 2 using photo-ionisation, e.g. using laser beam
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H01J27/26 2 using surface ionisation, e.g. field effect ion sources, thermionic ion sources (H01J27/20, H01J27/24 take precedence)
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H01J29/00 0 Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
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H01J29/003 1 {Arrangements for eliminating unwanted electromagnetic effects, e.g. demagnetisation arrangements, shielding coils (H01J29/06, H01J29/867 take precedence; demagnetisation in general H01F13/00; circuit arrangements therefor H04N9/29; screening of apparatus against electric or magnetic fields H05K9/00)}
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H01J29/006 1 {Arrangements for eliminating unwanted temperature effects}
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H01J29/02 1 Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
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H01J29/021 2 {arrangements for eliminating interferences in the tube (H01J29/484 takes precedence)}
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H01J29/023 2 {secondary-electron emitting electrode arrangements (secondary-emission tubes H01J43/00)}
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H01J29/025 2 {Mounting or supporting arrangements for grids (H01J29/028 takes precedence)}
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H01J29/026 2 {Mounting or supporting arrangements for charge storage screens not deposited on the frontplate}
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H01J29/028 2 {Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes}
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H01J29/04 2 Cathodes
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H01J29/06 2 Screens for shielding; Masks interposed in the electron stream
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H01J29/07 3 Shadow masks for colour television tubes
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H01J29/073 4 {Mounting arrangements associated with shadow masks}
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H01J29/076 4 {characterised by the shape or distribution of beam-passing apertures}
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H01J29/08 2 Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
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H01J29/085 3 {Anode plates, e.g. for screens of flat panel displays}
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H01J29/10 2 Screens on or from which an image or pattern is formed, picked up, converted or stored
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H01J29/12 3 acting as light valves by shutter operation, e.g. for eidophor
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H01J29/14 3 acting by discoloration, e.g. halide screen
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H01J29/16 3 Incandescent screens
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H01J29/18 3 Luminescent screens
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H01J29/182 4 {acting upon the lighting-up of the luminescent material other than by the composition of the luminescent material, e.g. by infra red or UV radiation, heating or electric fields}
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H01J29/185 4 {measures against halo-phenomena}
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H01J29/187 4 {screens with more than one luminescent material (as mixtures for the treatment of the screens) (for several superimposed luminescent layers H01J29/26; for adjacent dots or lines of different luminescent material H01J29/32)}
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H01J29/20 4 characterised by the luminescent material
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H01J29/22 4 characterised by the binder or adhesive for securing the luminescent material to its support, e.g. vessel
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H01J29/225 5 {photosensitive adhesive}
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H01J29/24 4 Supports for luminescent material
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H01J29/26 4 with superimposed luminescent layers
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H01J29/28 4 with protective, conductive or reflective layers
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H01J29/30 4 with luminescent material discontinuously arranged, e.g. in dots, in lines
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H01J29/32 5 with adjacent dots or lines of different luminescent material, e.g. for colour television
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H01J29/322 6 {with adjacent dots}
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H01J29/325 6 {with adjacent lines}
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H01J29/327 6 {Black matrix materials}
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H01J29/34 4 provided with permanent marks or references
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H01J29/36 3 Photoelectric screens; Charge-storage screens
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H01J29/38 4 not using charge storage, e.g. photo-emissive screen, extended cathode {(electrodes using photo-emission in general H01J1/34)}
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H01J29/385 5 {Photocathodes comprising a layer which modified the wave length of impinging radiation}
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H01J29/39 4 Charge-storage screens
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H01J29/395 5 {charge-storage grids exhibiting triode effect}
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H01J29/41 5 using secondary emission, e.g. for supericonoscope {(electrodes using secondary emission in general H01J1/32; secondary emission tubes H01J43/00)}
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H01J29/413 6 {for writing and reading of charge pattern on opposite sides of the target, e.g. for superorthicon}
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H01J29/416 7 {with a matrix of electrical conductors traversing the target}
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H01J29/43 5 using photo-emissive mosaic, e.g. for orthicon, for iconoscope
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H01J29/435 6 {with a matrix of conductors traversing the target}
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H01J29/44 5 exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity {(particle detectors exhibiting internal electric effects G01T1/26)}
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H01J29/45 5 exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen {(photoconductive layers for electrography G03G5/00)}
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H01J29/451 6 {with photosensitive junctions}
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H01J29/453 7 {provided with diode arrays}
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H01J29/455 8 {formed on a silicon substrate}
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H01J29/456 7 {exhibiting no discontinuities, e.g. consisting of uniform layers}
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H01J29/458 6 {pyroelectrical targets; targets for infra-red or ultra-violet or X-ray radiations}
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H01J29/46 1 Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement {(transit time tubes H01J23/00, H01J25/00; X-ray tubes H01J35/00; beam tubes for examining ions, e.g. electron or ion microscopes, or processing of objects or materials, e.g. electron or ion beam tubes H01J37/04; electron multipliers H01J43/04; handling of radiation or particles, e.g. focusing, deviating, not otherwise provided for G21K1/00)}
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H01J29/462 2 {arrangements for interrupting the beam during inoperative periods}
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H01J29/465 2 {for simultaneous focalisation and deflection of ray or beam}
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H01J29/467 2 {Control electrodes for flat display tubes, e.g. of the type covered by group H01J31/123}
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H01J29/48 2 Electron guns
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H01J29/481 3 {Electron guns using field-emission, photo-emission, or secondary-emission electron source}
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H01J29/482 3 {Electron guns using electron multiplication}
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H01J29/484 3 {Eliminating deleterious effects due to thermal effects, electrical or magnetic fields; Preventing unwanted emission (H01J29/481 and H01J29/482 take precedence)}
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H01J29/485 3 {Construction of the gun or of parts thereof (H01J29/481, H01J29/482, H01J29/484 and H01J29/487 take precedence)}
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H01J29/487 3 {Replacing parts of the gun; Relative adjustment of the electrodes (H01J29/481 and H01J29/482 take precedence; vacuum locks H01J29/865)}
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H01J29/488 3 {Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes}
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H01J29/50 3 two or more guns in a single vacuum space, e.g. for plural-ray tube (H01J29/51 takes precedence)
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H01J29/503 4 {Three or more guns, the axes of which lay in a common plane}
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H01J29/506 4 {guns in delta or circular configuration}
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H01J29/51 3 Arrangements for controlling convergence of a plurality of beams {by means of electric field only}
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H01J29/52 2 Arrangements for controlling intensity of ray or beam, e.g. for modulation {(H01J29/467 takes precedence)}
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H01J29/525 3 {Digitally controlled systems, e.g. Digisplay}
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H01J29/54 2 Arrangements for centring ray or beam {(H01J29/467 takes precedence)}
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H01J29/56 2 Arrangements for controlling cross-section of ray or beam; Arrangements for correcting aberration of beam, e.g. due to lenses {(H01J29/467 takes precedence)}
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H01J29/563 3 {for controlling cross-section}
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H01J29/566 3 {for correcting aberration}
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H01J29/58 2 Arrangements for focusing or reflecting ray or beam
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H01J29/585 3 {in which the transit time of the electrons has to be taken into account}
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H01J29/60 3 Mirrors
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H01J29/62 3 Electrostatic lenses
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H01J29/622 4 {producing fields exhibiting symmetry of revolution}
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H01J29/624 5 {co-operating with or closely associated to an electron gun}
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H01J29/626 4 {producing fields exhibiting periodic axial symmetry, e.g. multipolar fields}
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H01J29/628 5 {co-operating with or closely associated to an electron gun}
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H01J29/64 3 Magnetic lenses
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H01J29/66 4 using electromagnetic means only
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H01J29/68 4 using permanent magnets only
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H01J29/70 2 Arrangements for deflecting ray or beam {(H01J29/467, H01J29/525 take precedence)}
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H01J29/701 3 {Systems for correcting deviation or convergence of a plurality of beams by means of magnetic fields at least}
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H01J29/702 4 {Convergence correction arrangements therefor}
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H01J29/703 5 {Static convergence systems}
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H01J29/705 5 {Dynamic convergence systems}
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H01J29/706 4 {Deviation correction devices, i.e. having the same action on each beam}
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H01J29/707 4 {Arrangements intimately associated with parts of the gun and co-operating with external magnetic excitation devices}
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H01J29/708 3 {in which the transit time of the electrons has to be taken into account}
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H01J29/72 3 along one straight line or along two perpendicular straight lines
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H01J29/74 4 Deflecting by electric fields only
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H01J29/76 4 Deflecting by magnetic fields only
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H01J29/762 5 {using saddle coils or printed windings (coils per se H01F)}
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H01J29/764 5 {using toroidal windings}
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H01J29/766 5 {using a combination of saddle coils and toroidal windings}
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H01J29/768 5 {using printed windings (printed windings in general H01F27/2804; manufacturing printed coils per se H01F41/04; printed circuits and apparatus or processes for manufacturing printed circuits in general H05K1/00, e.g. H05K1/16, and H05K3/00)}
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H01J29/78 3 along a circle, spiral or rotating radial line, e.g. for radar display
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H01J29/80 2 Arrangements for controlling the ray or beam after passing the main deflection system, e.g. for post-acceleration or post-concentration, for colour switching {(H01J29/701 takes precedence)}
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H01J29/803 3 {for post-acceleration or post-deflection, e.g. for colour switching}
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H01J29/806 4 {Electron lens mosaics, e.g. fly's eye lenses, colour selection lenses}
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H01J29/81 3 using shadow masks
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H01J29/82 2 Mounting, supporting, spacing, or insulating electron-optical or ion-optical arrangements
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H01J29/823 3 {around the neck of the tube}
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H01J29/826 4 {Deflection arrangements}
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H01J29/84 1 Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection
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H01J29/845 2 {by means of magnetic systems}
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H01J29/86 1 Vessels; Containers; Vacuum locks
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H01J29/861 2 {Vessels or containers characterised by the form or the structure thereof}
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H01J29/862 3 {of flat panel cathode ray tubes}
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H01J29/863 2 {Vessels or containers characterised by the material thereof}
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H01J29/864 2 {Spacers between faceplate and backplate of flat panel cathode ray tubes}
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H01J29/865 2 {Vacuum locks}
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H01J29/866 3 {Devices for introducing a recording support into the vessel}
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H01J29/867 2 {Means associated with the outside of the vessel for shielding, e.g. magnetic shields (screens for shielding inside the vessel H01J29/06; magnetic shielding in general H05K9/00)}
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H01J29/868 3 {Screens covering the input or output face of the vessel, e.g. transparent anti-static coatings, X-ray absorbing layers}
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H01J29/87 2 Arrangements for preventing or limiting effects of implosion of vessels or containers
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H01J29/88 2 provided with coatings on the walls thereof; Selection of materials for the coatings {(H01J29/868 and H01J29/89 take precedence)}
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H01J29/89 2 Optical or photographic arrangements structurally combined {or co-operating} with the vessel {(H01J29/866 and H01J29/868 take precedence)}
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H01J29/892 3 {using fibre optics}
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H01J29/894 3 {Arrangements combined with the vessel for the purpose of image projection on a screen (projection arrangements for image reproduction, e.g. using eidophor H04N5/74)}
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H01J29/896 3 {Anti-reflection means, e.g. eliminating glare due to ambient light}
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H01J29/898 3 {Spectral filters}
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H01J29/90 1 Leading-in arrangements; Seals therefor
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H01J29/92 1 Means forming part of the tube for the purpose of providing electrical connection to it
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H01J29/925 2 {High voltage anode feedthrough connectors for display tubes}
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H01J29/94 1 Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering {(exhausting, degassing, gettering of electric discharge tubes in general H01J9/38)}
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H01J29/96 1 One or more circuit elements structurally associated with the tube
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H01J29/98 1 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J31/00 0 Cathode ray tubes; Electron beam tubes (H01J25/00, H01J33/00, H01J35/00, H01J37/00 take precedence; details of cathode ray tubes or of electron beam tubes H01J29/00)
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H01J31/02 1 having one or more output electrodes which may be impacted selectively by the ray or beam, and onto, from, or over which the ray or beam may be deflected or de-focused {(pulse counting circuits therewith H03K29/06)}
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H01J31/04 2 with only one or two output electrodes {with only two electrically independant groups or electrodes}
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H01J31/06 2 with more than two output electrodes, e.g. for multiple switching or counting
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H01J31/065 3 {for electrography or electrophotography, for transferring a charge pattern through the faceplate (leading-in arrangements H01J29/90; Lenard tubes H01J33/00; electrography or electrophotography per se G03C)}
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H01J31/08 1 having a screen on or from which an image or pattern is formed, picked up, converted, or stored
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H01J31/10 2 Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
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H01J31/12 3 with luminescent screen
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H01J31/121 4 {tubes for oscillography (colour display tubes H01J31/20; cathode ray oscillography G01R13/20)}
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H01J31/122 4 {Direct viewing storage tubes without storage grid (with storage grid H01J31/18)}
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H01J31/123 4 {Flat display tubes}
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H01J31/124 5 {using electron beam scanning}
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H01J31/125 5 {provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection}
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H01J31/126 6 {using line sources}
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H01J31/127 6 {using large area or array sources, i.e. essentially a source for each pixel group}
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H01J31/128 4 {provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digitally controlled display tubes (H01J31/123 takes precedence)}
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H01J31/14 4 Magic-eye or analogous tuning indicators {(mounting of visual indicators in a radio set H03J1/04; circuits for timing indicators H03J3/14)}
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H01J31/15 4 with ray or beam selectively directed to luminescent anode segments {(printing by application of radiation B41J2/447)}
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H01J31/16 4 with mask carrying a number of selectively displayable signs, e.g. charactron, numeroscope {(tubes with a mask carrying a matrix of openings, a selection of which permits a sign to be displayed H01J31/128)}
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H01J31/18 4 with image written by a ray or beam on a grid-like charge-accumulating screen, and with a ray or beam passing through and influenced by this screen before striking the luminescent screen, e.g. direct-view storage tube {(charge storage grids exhibiting triode effect H01J29/395)}
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H01J31/20 3 for displaying images or patterns in two or more colours {(circuits for colour television H04N9/16 - H04N9/28)}
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H01J31/201 4 {using a colour-selection electrode}
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H01J31/203 5 {with more than one electron beam}
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H01J31/205 6 {with three electron beams in delta configuration}
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H01J31/206 6 {with three coplanar electron beams}
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H01J31/208 4 {using variable penetration depth of the electron beam in the luminescent layer, e.g. penetrons}
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H01J31/22 3 for stereoscopic displays
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H01J31/24 3 with screen acting as light valve by shutter operation, e.g. eidophor {(projection arrangements for image reproduction, e.g. using eidophor H04N5/74)}
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H01J31/26 2 Image pick-up tubes having an input of visible light and electric output (tubes without defined electron beams and having a light ray scanning photo-emissive screen H01J40/20)
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H01J31/265 3 {with light spot scanning}
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H01J31/28 3 with electron ray scanning the image screen
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H01J31/283 4 {with a target comprising semiconductor junctions}
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H01J31/286 4 {correlater tubes}
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H01J31/30 4 having regulation of screen potential at anode potential, e.g. iconoscope
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H01J31/32 5 Tubes with image amplification section, e.g. image-iconoscope, supericonoscope
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H01J31/34 4 having regulation of screen potential at cathode potential, e.g. orthicon
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H01J31/36 5 Tubes with image amplification section, e.g. image-orthicon
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H01J31/38 5 Tubes with photoconductive screen, e.g. vidicon
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H01J31/40 4 having grid-like image screen through which the electron ray passes and by which the ray is influenced before striking the output electrode, i.e. having "triode action"
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H01J31/42 3 with image screen generating a composite electron beam which is deflected as a whole past a stationary probe to simulate a scanning effect, e.g. Farnsworth pick-up tube
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H01J31/44 4 Tubes with image amplification section
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H01J31/46 3 Tubes in which electrical output represents both intensity and colour of image {(colour television cameras with only one tube H04N23/12)}
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H01J31/48 3 Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
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H01J31/49 2 Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infra-red radiation
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H01J31/495 2 Pick-up tubes adapted for an input of sonic, ultrasonic, or mechanical vibrations and having an electric output
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H01J31/50 2 Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
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H01J31/501 3 {with an electrostatic electron optic system (H01J31/52 - H01J31/56 take precedence)}
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H01J31/502 4 {with means to interrupt the beam, e.g. shutter for high speed photography (circuits using electron-beam shutters G03B27/725)}
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H01J31/503 3 {with an electromagnetic electron-optic system (H01J31/52 - H01J31/56 take precedence)}
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H01J31/505 3 {flat tubes, e.g. proximity focusing tubes}
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H01J31/506 3 {tubes using secondary emission effect}
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H01J31/507 4 {using a large number of channels, e.g. microchannel plates}
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H01J31/508 3 {Multistage converters}
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H01J31/52 3 having grid-like image screen through which the electron ray or beam passes and by which the ray or beam is influenced before striking the luminescent output screen, i.e. having "triode action"
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H01J31/54 3 in which the electron ray or beam is reflected by the image input screen on to the image output screen
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H01J31/56 3 for converting or amplifying images in two or more colours
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H01J31/58 2 Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output {(electrostatic memories using electron beam tubes G11C11/23)}
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H01J31/585 3 {Monoscopes (H01J31/60 takes precedence)}
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H01J31/60 3 having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen (by circuitry alone H01J29/08)
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H01J31/62 4 with separate reading and writing rays
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H01J31/64 5 on opposite sides of screen, e.g. for conversion of definition
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H01J31/66 3 having means for allowing all but selected cross-section elements of a homogeneous electron beam to reach corresponding elements of the screen, e.g. selectron
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H01J31/68 3 in which the information pattern represents two or more colours
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H01J33/00 0 Discharge tubes with provision for emergence of electrons or ions from the vessel ({irradiation devices G21K} ; particle accelerators H05H); Lenard tubes
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H01J33/02 1 Details {(vessels for operation at high tension H01J5/06)}
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H01J33/04 2 Windows
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H01J35/00 0 X-ray tubes
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H01J35/02 1 Details
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H01J35/025 2 {X-ray tubes with structurally associated circuit elements}
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H01J35/04 2 Electrodes {; Mutual position thereof; Constructional adaptations therefor}
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H01J35/045 3 {Electrodes for controlling the current of the cathode ray, e.g. control grids}
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H01J35/06 3 Cathodes
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H01J35/064 4 {Details of the emitter, e.g. material or structure (H01J35/065 takes precedence)}
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H01J35/065 4 {Field emission, photo emission or secondary emission cathodes}
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H01J35/066 4 {Details of electron optical components, e.g. cathode cups}
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H01J35/08 3 Anodes; Anti cathodes
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H01J35/10 4 Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
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H01J35/101 5 {Arrangements for rotating anodes, e.g. supporting means, means for greasing, means for sealing the axle or means for shielding or protecting the driving}
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H01J35/1017 6 {Bearings for rotating anodes}
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H01J35/1024 7 {Rolling bearings}
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H01J35/103 7 {Magnetic bearings}
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H01J35/104 7 {Fluid bearings}
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H01J35/105 5 {Cooling of rotating anodes, e.g. heat emitting layers or structures}
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H01J35/106 6 {Active cooling, e.g. fluid flow, heat pipes}
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H01J35/107 6 {Cooling of the bearing assemblies}
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H01J35/108 5 {Substrates for and bonding of emissive target, e.g. composite structures}
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H01J35/112 4 {Non-rotating anodes (H01J35/12 takes precedence)}
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H01J35/116 5 {Transmissive anodes (acting as a window H01J35/186)}
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H01J35/12 4 Cooling non-rotary anodes
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H01J35/13 5 {Active cooling, e.g. fluid flow, heat pipes}
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H01J35/14 2 Arrangements for concentrating, focusing, or directing the cathode ray
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H01J35/147 3 {Spot size control}
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H01J35/153 3 {Spot position control}
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H01J35/16 2 Vessels; Containers; Shields associated therewith
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H01J35/165 3 {joining connectors to the tube}
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H01J35/18 3 Windows
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H01J35/186 4 {used as targets or X-ray converters}
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H01J35/20 2 Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
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H01J35/22 1 specially designed for passing a very high current for a very short time, e.g. for flash operation
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H01J35/24 1 Tubes wherein the point of impact of the cathode ray on the anode or anticathode is movable relative to the surface thereof
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H01J35/26 2 by rotation of the anode or anticathode
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H01J35/28 2 by vibration, oscillation, reciprocation, or swash-plate motion of the anode or anticathode
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H01J35/30 2 by deflection of the cathode ray
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H01J35/305 3 {by using a rotating X-ray tube in conjunction therewith}
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H01J35/32 1 Tubes wherein the X-rays are produced at or near the end of the tube or a part thereof which tube or part has a small cross-section to facilitate introduction into a small hole or cavity
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H01J37/00 0 Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (H01J33/00, H01J40/00, H01J41/00, H01J47/00, H01J49/00 take precedence)
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H01J37/02 1 Details
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H01J37/023 2 {Means for mechanically adjusting components not otherwise provided for (mechanically adjusting from the outside of electron or ion-optical components H01J37/067; positioning the object or material H01J37/20; vacuum locks, means for obtaining or maintaining the desired pressure within the tube H01J37/18; other manipulating devices H01L21/48, G21F)}
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H01J37/026 2 {Means for avoiding or neutralising unwanted electrical charges on tube components}
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H01J37/04 2 Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement {(electron or ion-optical systems for localised treatment of materials H01J37/3007; discharge control means in gas filled discharge tubes H01J37/32009)}
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H01J37/045 3 {Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge}
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H01J37/05 3 Electron or ion-optical arrangements for separating electrons or ions according to their energy {or mass}(particle separator tubes H01J49/00)
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H01J37/06 3 Electron sources; Electron guns {(electron sources in general H01J1/02, H01J19/02; electron guns in general H01J3/02)}
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H01J37/061 4 {Electron guns using electron multiplication}
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H01J37/063 4 Geometrical arrangement of electrodes for beam-forming
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H01J37/065 4 Construction of guns or parts thereof (H01J37/067 - H01J37/077 take precedence)
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H01J37/067 4 Replacing parts of guns; Mutual adjustment of electrodes (H01J37/073 - H01J37/077 take precedence; vacuum locks H01J37/18)
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H01J37/07 4 Eliminating deleterious effects due to thermal effects or electric or magnetic fields (H01J37/073 - H01J37/077 take precedence)
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H01J37/073 4 Electron guns using field emission, photo emission, or secondary emission electron sources
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H01J37/075 4 Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
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H01J37/077 4 Electron guns using discharge in gases or vapours as electron sources
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H01J37/08 3 Ion sources; Ion guns
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H01J37/09 3 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
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H01J37/10 3 Lenses
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H01J37/12 4 electrostatic
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H01J37/14 4 magnetic
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H01J37/141 5 Electromagnetic lenses
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H01J37/1413 6 {Means for interchanging parts of the lens, e.g. pole pieces, within the tube (mechanically adjusting electron (ion) optical components H01J37/15)}
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H01J37/1416 6 {with superconducting coils}
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H01J37/143 5 Permanent magnetic lenses
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H01J37/145 4 Combinations of electrostatic and magnetic lenses
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H01J37/147 3 Arrangements for directing or deflecting the discharge along a desired path ({H01J37/045 take precedence;} lenses H01J37/10)
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H01J37/1471 4 {for centering, aligning or positioning of ray or beam}
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H01J37/1472 4 {Deflecting along given lines}
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H01J37/1474 5 {Scanning means}
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H01J37/1475 6 {magnetic}
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H01J37/1477 6 {electrostatic}
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H01J37/1478 4 {Beam tilting means, i.e. for stereoscopy or for beam channelling}
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H01J37/15 4 External mechanical adjustment of electron or ion optical components (H01J37/067, H01J37/20 take precedence)
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H01J37/153 3 Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
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H01J37/16 2 Vessels; Containers
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H01J37/165 3 {Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays}
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H01J37/18 2 Vacuum locks {; Means for obtaining or maintaining the desired pressure within the vessel (vacuum locks for electron-beam tubes in general H01J29/865)}
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H01J37/185 3 {Means for transferring objects between different enclosures of different pressure or atmosphere}
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H01J37/20 2 Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support {(introducing the objects H01J37/18)}
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H01J37/21 2 Means for adjusting the focus {(adjusting the focus while observing the image by photographic or optical means H01J37/22; means for observing the object or the point of impact on the object in tubes for the localised treatment of materials H01J37/3005)}
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H01J37/22 2 Optical or photographic arrangements associated with the tube {(using a CRT for the display of the image in a scanning electron microscope H01J37/28; observing the object or the point of impact on the object in tubes for the localised treatment of materials H01J37/3007)}
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H01J37/222 3 {Image processing arrangements associated with the tube (image data processing or generation, in general G06T)}
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H01J37/224 3 {Luminescent screens or photographic plates for imaging (photosensitive materials for photographic purposes G03C); Apparatus specially adapted therefor, e.g. cameras, TV-cameras, photographic equipment, exposure control; Optical subsystems specially adapted therefor, e.g. microscopes for observing image on luminescent screen}
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H01J37/226 3 {Optical arrangements for illuminating the object; optical arrangements for collecting light from the object}
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H01J37/228 4 {whereby illumination and light collection take place in the same area of the discharge}
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H01J37/24 2 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J37/241 3 {High voltage power supply or regulation circuits (components H01J37/248)}
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H01J37/242 3 {Filament heating power supply or regulation circuits (H01J37/241 takes precedence)}
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H01J37/243 3 {Beam current control or regulation circuits (H01J37/241 takes precedence)}
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H01J37/244 2 Detectors; Associated components or circuits therefor
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H01J37/248 2 Components associated with high voltage supply {(means for measuring the high voltage per se G01R15/00)}
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H01J37/252 1 Tubes for spot-analysing by electron or ion beams; Microanalysers
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H01J37/256 2 using scanning beams
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H01J37/26 1 Electron or ion microscopes; Electron or ion diffraction tubes
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H01J37/261 2 {Details}
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H01J37/263 3 {Contrast, resolution or power of penetration}
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H01J37/265 3 {Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination}
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H01J37/266 2 {Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy (emission microscopes H01J37/285; reflecting microscopes H01J37/29; spot analysing H01J37/252)}
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H01J37/268 3 {with scanning beams}
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H01J37/27 2 Shadow microscopy
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H01J37/28 2 with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)}
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H01J37/285 2 Emission microscopes, e.g. field-emission microscopes
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H01J37/29 2 Reflection microscopes
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H01J37/292 3 {using scanning ray}
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H01J37/295 2 Electron or ion diffraction tubes
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H01J37/2955 3 {using scanning ray}
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H01J37/30 1 Electron-beam or ion-beam tubes for localised treatment of objects
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H01J37/3002 2 {Details}
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H01J37/3005 3 {Observing the objects or the point of impact on the object}
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H01J37/3007 3 {Electron or ion-optical systems (electron or ion-optical details H01J37/06 - H01J37/153)}
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H01J37/301 2 Arrangements enabling beams to pass between regions of different pressure
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H01J37/302 2 Controlling tubes by external information, e.g. programme control (H01J37/304 takes precedence)
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H01J37/3023 3 {Programme control}
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H01J37/3026 4 {Patterning strategy}
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H01J37/304 2 Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals
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H01J37/3045 3 {Object or beam position registration}
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H01J37/305 2 for casting, melting, evaporating or etching {(methods for casting or melting of metals with electron beam or gas discharges C22B9/22)}
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H01J37/3053 3 {for evaporating or etching}
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H01J37/3056 4 {for microworking, e.g. etching of gratings, trimming of electrical components (trimming of resistors H01C17/22)}
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H01J37/31 2 for cutting or drilling {(methods for cutting or drilling metals with electron beams B23K15/00)}
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H01J37/315 2 for welding {(methods for welding metals with electron beams B23K15/00)}
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H01J37/317 2 for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation (H01J37/36 takes precedence)
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H01J37/3171 3 {for ion implantation (plasma immersion ion implantation H01J37/32412)}
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H01J37/3172 4 {Maskless patterned ion implantation}
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H01J37/3174 3 {Particle-beam lithography, e.g. electron beam lithography}
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H01J37/3175 4 {Projection methods, i.e. transfer substantially complete pattern to substrate}
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H01J37/3177 4 {Multi-beam, e.g. fly's eye, comb probe}
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H01J37/3178 3 {for applying thin layers on objects}
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H01J37/32 1 Gas-filled discharge tubes (heating by discharge H05B)
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H01J37/32009 2 {Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24)}
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H01J37/32018 3 {Glow discharge}
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H01J37/32027 4 {DC powered}
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H01J37/32036 4 {AC powered}
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H01J37/32045 4 {Circuits specially adapted for controlling the glow discharge}
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H01J37/32055 3 {Arc discharge}
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H01J37/32064 4 {Circuits specially adapted for controlling the arc discharge (for plasma torches H01H1/36)}
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H01J37/32073 3 {Corona discharge}
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H01J37/32082 3 {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
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H01J37/32091 4 {the radio frequency energy being capacitively coupled to the plasma}
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H01J37/321 4 {the radio frequency energy being inductively coupled to the plasma}
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H01J37/3211 5 {Antennas, e.g. particular shapes of coils}
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H01J37/32119 5 {Windows}
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H01J37/32128 4 {using particular waveforms, e.g. polarised waves}
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H01J37/32137 4 {controlling of the discharge by modulation of energy}
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H01J37/32146 5 {Amplitude modulation, includes pulsing}
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H01J37/32155 5 {Frequency modulation}
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H01J37/32165 6 {Plural frequencies}
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H01J37/32174 4 {Circuits specially adapted for controlling the RF discharge}
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H01J37/32183 5 {Matching circuits}
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H01J37/32192 3 {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)}
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H01J37/32201 4 {Generating means}
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H01J37/32211 4 {Means for coupling power to the plasma}
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H01J37/3222 5 {Antennas}
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H01J37/32229 5 {Waveguides}
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H01J37/32238 5 {Windows}
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H01J37/32247 5 {Resonators}
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H01J37/32256 6 {Tuning means}
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H01J37/32266 4 {Means for controlling power transmitted to the plasma}
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H01J37/32275 5 {Microwave reflectors}
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H01J37/32284 5 {Means for controlling or selecting resonance mode}
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H01J37/32293 4 {using particular waveforms, e.g. polarised waves}
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H01J37/32302 4 {Plural frequencies}
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H01J37/32311 4 {Circuits specially adapted for controlling the microwave discharge}
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H01J37/32321 3 {Discharge generated by other radiation (H01J37/32055, H01J37/32073, H01J37/32082, H01J37/32192, H01J37/32348 take precedence)}
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H01J37/3233 4 {using charged particles}
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H01J37/32339 4 {using electromagnetic radiation}
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H01J37/32348 3 {Dielectric barrier discharge}
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H01J37/32357 3 {Generation remote from the workpiece, e.g. down-stream}
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H01J37/32366 3 {Localised processing}
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H01J37/32376 4 {Scanning across large workpieces}
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H01J37/32385 4 {Treating the edge of the workpieces}
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H01J37/32394 3 {Treating interior parts of workpieces}
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H01J37/32403 3 {Treating multiple sides of workpieces, e.g. 3D workpieces}
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H01J37/32412 3 {Plasma immersion ion implantation}
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H01J37/32422 3 {Arrangement for selecting ions or species in the plasma}
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H01J37/32431 2 {Constructional details of the reactor}
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H01J37/3244 3 {Gas supply means}
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H01J37/32449 4 {Gas control, e.g. control of the gas flow}
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H01J37/32458 3 {Vessel}
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H01J37/32467 4 {Material}
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H01J37/32477 4 {characterised by the means for protecting vessels or internal parts, e.g. coatings}
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H01J37/32486 5 {Means for reducing recombination coefficient}
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H01J37/32495 5 {Means for protecting the vessel against plasma}
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H01J37/32504 5 {Means for preventing sputtering of the vessel}
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H01J37/32513 4 {Sealing means, e.g. sealing between different parts of the vessel}
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H01J37/32522 4 {Temperature}
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H01J37/32532 3 {Electrodes}
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H01J37/32541 4 {Shape}
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H01J37/3255 4 {Material}
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H01J37/32559 4 {Protection means, e.g. coatings}
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H01J37/32568 4 {Relative arrangement or disposition of electrodes; moving means}
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H01J37/32577 4 {Electrical connecting means}
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H01J37/32587 4 {Triode systems}
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H01J37/32596 4 {Hollow cathodes}
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H01J37/32605 4 {Removable or replaceable electrodes or electrode systems}
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H01J37/32614 4 {Consumable cathodes for arc discharge}
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H01J37/32623 3 {Mechanical discharge control means}
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H01J37/32633 4 {Baffles}
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H01J37/32642 4 {Focus rings}
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H01J37/32651 4 {Shields, e.g. dark space shields, Faraday shields}
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H01J37/3266 3 {Magnetic control means}
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H01J37/32669 4 {Particular magnets or magnet arrangements for controlling the discharge}
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H01J37/32678 4 {Electron cyclotron resonance}
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H01J37/32688 4 {Multi-cusp fields}
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H01J37/32697 3 {Electrostatic control}
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H01J37/32706 4 {Polarising the substrate}
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H01J37/32715 3 {Workpiece holder}
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H01J37/32724 4 {Temperature}
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H01J37/32733 3 {Means for moving the material to be treated}
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H01J37/32743 4 {for introducing the material into processing chamber}
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H01J37/32752 4 {for moving the material across the discharge}
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H01J37/32761 5 {Continuous moving}
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H01J37/3277 6 {of continuous material}
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H01J37/32779 6 {of batches of workpieces}
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H01J37/32788 4 {for extracting the material from the process chamber}
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H01J37/32798 3 {Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus}
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H01J37/32807 4 {Construction (includes replacing parts of the apparatus)}
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H01J37/32816 4 {Pressure}
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H01J37/32825 5 {Working under atmospheric pressure or higher}
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H01J37/32834 5 {Exhausting}
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H01J37/32844 6 {Treating effluent gases}
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H01J37/32853 4 {Hygiene}
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H01J37/32862 5 {In situ cleaning of vessels and/or internal parts}
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H01J37/32871 5 {Means for trapping or directing unwanted particles}
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H01J37/3288 4 {Maintenance}
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H01J37/32889 4 {Connection or combination with other apparatus}
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H01J37/32899 4 {Multiple chambers, e.g. cluster tools}
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H01J37/32908 4 {Utilities}
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H01J37/32917 2 {Plasma diagnostics}
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H01J37/32926 3 {Software, data control or modelling}
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H01J37/32935 3 {Monitoring and controlling tubes by information coming from the object and/or discharge}
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H01J37/32944 4 {Arc detection}
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H01J37/32954 4 {Electron temperature measurement}
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H01J37/32963 4 {End-point detection}
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H01J37/32972 4 {Spectral analysis}
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H01J37/32981 4 {Gas analysis}
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H01J37/3299 3 {Feedback systems}
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H01J37/34 2 operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34})
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H01J37/3402 3 {using supplementary magnetic fields}
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H01J37/3405 4 {Magnetron sputtering}
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H01J37/3408 5 {Planar magnetron sputtering}
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H01J37/3411 3 {Constructional aspects of the reactor}
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H01J37/3414 4 {Targets}
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H01J37/3417 5 {Arrangements}
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H01J37/342 5 {Hollow targets}
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H01J37/3423 5 {Shape}
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H01J37/3426 5 {Material}
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H01J37/3429 6 {Plural materials}
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H01J37/3432 5 {Target-material dispenser}
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H01J37/3435 4 {Target holders (includes backing plates and endblocks)}
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H01J37/3438 4 {Electrodes other than cathode}
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H01J37/3441 4 {Dark space shields}
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H01J37/3444 4 {Associated circuits}
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H01J37/3447 4 {Collimators, shutters, apertures}
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H01J37/345 4 {Magnet arrangements in particular for cathodic sputtering apparatus (material of magnets or magnets in general H01F1/00, H01F7/00)}
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H01J37/3452 5 {Magnet distribution}
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H01J37/3455 5 {Movable magnets}
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H01J37/3458 5 {Electromagnets in particular for cathodic sputtering apparatus (electromagnets in general H01F7/06)}
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H01J37/3461 4 {Means for shaping the magnetic field, e.g. magnetic shunts}
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H01J37/3464 3 {Operating strategies}
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H01J37/3467 4 {Pulsed operation, e.g. HIPIMS}
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H01J37/347 4 {Thickness uniformity of coated layers or desired profile of target erosion}
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H01J37/3473 4 {Composition uniformity or desired gradient}
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H01J37/3476 3 {Testing and control}
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H01J37/3479 4 {Detecting exhaustion of target material}
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H01J37/3482 4 {Detecting or avoiding eroding through}
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H01J37/3485 4 {Means for avoiding target poisoning}
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H01J37/3488 3 {Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus}
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H01J37/3491 4 {Manufacturing of targets}
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H01J37/3494 4 {Adaptation to extreme pressure conditions}
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H01J37/3497 4 {Temperature of target}
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H01J37/36 2 for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation {(condensing of electrically charged vapour onto a surface for covering materials with metals C23C14/32)}
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H01J40/00 0 Photoelectric discharge tubes not involving the ionisation of a gas (H01J49/00 takes precedence)
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H01J40/02 1 Details
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H01J40/04 2 Electrodes
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H01J40/06 3 Photo-emissive cathodes
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H01J40/08 2 Magnetic means for controlling discharge
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H01J40/10 2 Selection of substances for gas fillings
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H01J40/12 2 One or more circuit elements structurally associated with the tube
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H01J40/14 2 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J40/16 1 having photo- emissive cathode, e.g. alkaline photoelectric cell (operating with secondary emission H01J43/00)
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H01J40/18 2 with luminescent coatings for influencing the sensitivity of the tube, e.g. by converting the input wavelength
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H01J40/20 2 wherein a light-ray scans a photo-emissive screen
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H01J41/00 0 Discharge tubes for measuring pressure of introduced gas {or for detecting presence of gas}; Discharge tubes for evacuation by diffusion of ions
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H01J41/02 1 Discharge tubes for measuring pressure of introduced gas {or for detecting presence of gas}
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H01J41/04 2 with ionisation by means of thermionic cathodes
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H01J41/06 2 with ionisation by means of cold cathodes
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H01J41/08 2 with ionisation by means of radioactive substances, e.g. alphatrons
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H01J41/10 2 of particle spectrometer type (particle spectrometers per se H01J49/00)
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H01J41/12 1 Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps
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H01J41/14 2 with ionisation by means of thermionic cathodes
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H01J41/16 3 using gettering substances
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H01J41/18 2 with ionisation by means of cold cathodes
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H01J41/20 3 using gettering substances
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H01J43/00 0 Secondary-emission tubes; Electron-multiplier tubes (dynamic electron-multiplier tubes H01J25/76)
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H01J43/02 1 Tubes in which one or a few electrodes are secondary-electron emitting electrodes
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H01J43/025 2 {Circuits therefor}
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H01J43/04 1 Electron multipliers {(if forming part of electron gun H01J3/023)}
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H01J43/045 2 {Position sensitive electron multipliers}
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H01J43/06 2 Electrode arrangements
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H01J43/08 3 Cathode arrangements (construction of photo cathodes H01J40/06, H01J40/16, H01J47/00, H01J49/08)
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H01J43/10 3 Dynodes (H01J43/24, H01J43/26 take precedence)
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H01J43/12 3 Anode arrangements
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H01J43/14 3 Control of electron beam by magnetic field
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H01J43/16 3 Electrode arrangements using essentially one dynode
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H01J43/18 3 Electrode arrangements using essentially more than one dynode
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H01J43/20 4 Dynodes consisting of sheet material, e.g. plane, bent
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H01J43/22 4 Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind
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H01J43/24 4 Dynodes having potential gradient along their surfaces
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H01J43/243 5 {Dynodes consisting of a piling-up of channel-type dynode plates}
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H01J43/246 5 {Microchannel plates [MCP] (image amplification tubes using MCP H01J31/507)}
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H01J43/26 4 Box dynodes
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H01J43/28 2 Vessels {, e.g. wall of the tube}; Windows; Screens; Suppressing undesired discharges or currents
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H01J43/30 2 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J45/00 0 Discharge tubes functioning as thermionic generators {(structural combination of fuel element with thermoelectric element G21C3/40; nuclear power plants using thermionic converters G21D7/04; structural combination of a radioactive source with a thermionic converter, e.g. radioisotope batteries G21H1/10; generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom H02N3/00)}
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H01J47/00 0 Tubes for determining the presence, intensity, density or energy of radiation or particles ({discharge tubes using igniting by associated radioactive materials or fillings, e.g. current stabilising tubes H01J17/32} ; photoelectric discharge tubes not involving the ionisation of a gas H01J40/00 {; discharge tubes for measuring the pressure, partial pressure of introduced gas or for detecting presence of gas H01J41/02; ionisation chambers using a solid dielectric G01T3/008})
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H01J47/001 1 {Details}
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H01J47/002 2 {Vessels or containers}
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H01J47/003 3 {using tissue-equivalent materials}
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H01J47/004 3 {Windows permeable to X-rays, gamma-rays, or particles (windows for discharge tubes with provision for emergence of electrons or ions from the vessel H01J33/04; windows for X-ray tubes H01J35/18)}
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H01J47/005 2 {Gas fillings (H01J47/12 takes precedence); Maintaining the desired pressure within the tube}
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H01J47/006 3 {Tissue equivalent gas fillings}
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H01J47/007 1 {Flash detectors}
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H01J47/008 1 {Drift detectors}
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H01J47/02 1 Ionisation chambers
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H01J47/022 2 {Calibration thereof}
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H01J47/024 2 {Well-type ionisation chambers}
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H01J47/026 2 {Gas flow ionisation chambers}
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H01J47/028 2 {using a liquid dielectric}
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H01J47/04 2 Capacitive ionisation chambers, e.g. the electrodes of which are used as electrometers
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H01J47/06 1 Proportional counter tubes
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H01J47/062 2 {Multiwire proportional counter tubes}
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H01J47/065 2 {Well-type proportional counter tubes}
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H01J47/067 2 {Gas flow proportional counter tubes}
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H01J47/08 1 Geiger-Müller counter tubes {(gas filling with very short deionisation times H01J17/64, H01T)}
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H01J47/10 1 Spark counters (H01J47/14 takes precedence; spark gaps H01T)
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H01J47/12 1 Neutron detector tubes, e.g. BF3 tubes
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H01J47/1205 2 {using nuclear reactions of the type (n, alpha) in solid materials, e.g. Boron-10 (n,alpha) Lithium-7, Lithium-6 (n, alpha)Hydrogen-3}
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H01J47/1211 3 {Ionisation chambers}
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H01J47/1216 4 {Gamma compensated}
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H01J47/1222 3 {Proportional counters}
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H01J47/1227 2 {Fission detectors}
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H01J47/1233 3 {Ionisation chambers}
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H01J47/1238 3 {Counters}
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H01J47/1244 4 {Multiwire counters}
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H01J47/125 2 {Helium ionisation detectors}
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H01J47/1255 3 {Ionisation chambers}
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H01J47/1261 3 {Counters}
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H01J47/1266 4 {Multi-wire counters}
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H01J47/1272 2 {BF3 tubes}
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H01J47/1277 2 {Light-nuclei-recoil ionisation detectors, e.g. using protons, alpha-particles}
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H01J47/1283 3 {Ionisation chambers}
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H01J47/1288 3 {Counters}
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H01J47/1294 4 {Multi-wire counters}
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H01J47/14 1 Parallel electrode spark or streamer chambers; Wire spark or streamer chambers {(circuit arrangements with multi-wire or parallel-plate chambers for recording of movements or tracks of particles G01T5/12)}
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H01J47/16 2 characterised by readout of each individual wire
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H01J47/18 3 the readout being electrical (H01J47/20 takes precedence)
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H01J47/20 3 the readout employing electrical or mechanical delay lines, e.g. magnetostrictive delay lines
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H01J47/22 2 characterised by another type of readout
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H01J47/24 3 the readout being acoustical
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H01J47/26 3 the readout being optical
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H01J49/00 0 Particle spectrometers or separator tubes
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H01J49/0004 1 {Imaging particle spectrometry}
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H01J49/0009 1 {Calibration of the apparatus}
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H01J49/0013 1 {Miniaturised spectrometers, e.g. having smaller than usual scale, integrated conventional components}
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H01J49/0018 2 {Microminiaturised spectrometers, e.g. chip-integrated devices, MicroElectro-Mechanical Systems [MEMS]}
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H01J49/0022 1 {Portable spectrometers, e.g. devices comprising independent power supply, constructional details relating to portability (small scale devices per se H01J49/0013 and H01J49/0018)}
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H01J49/0027 1 {Methods for using particle spectrometers}
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H01J49/0031 2 {Step by step routines describing the use of the apparatus (H01J49/0081 takes precedence)}
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H01J49/0036 2 {Step by step routines describing the handling of the data generated during a measurement}
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H01J49/004 1 {Combinations of spectrometers, tandem spectrometers, e.g. MS/MS, MSn}
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H01J49/0045 2 {characterised by the fragmentation or other specific reaction}
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H01J49/005 3 {by collision with gas, e.g. by introducing gas or by accelerating ions with an electric field}
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H01J49/0054 3 {by an electron beam, e.g. electron impact dissociation, electron capture dissociation}
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H01J49/0059 3 {by a photon beam, photo-dissociation}
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H01J49/0063 3 {by applying a resonant excitation voltage}
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H01J49/0068 3 {by collision with a surface, e.g. surface induced dissociation}
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H01J49/0072 3 {by ion/ion reaction, e.g. electron transfer dissociation, proton transfer dissociation}
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H01J49/0077 3 {specific reactions other than fragmentation}
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H01J49/0081 2 {Tandem in time, i.e. using a single spectrometer}
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H01J49/0086 2 {Accelerator mass spectrometers}
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H01J49/009 2 {Spectrometers having multiple channels, parallel analysis}
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H01J49/0095 1 {Particular arrangements for generating, introducing or analyzing both positive and negative analyte ions (ion/ion reactions H01J49/0072)}
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H01J49/02 1 Details
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H01J49/022 2 {Circuit arrangements, e.g. for generating deviation currents or voltages (regulating electric or magnetic variables in general, e.g. current, magnetic field G05F); Components associated with high voltage supply (high voltage supply per se H02M)}
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H01J49/025 2 {Detectors specially adapted to particle spectrometers (data acquisition H01J49/0036; detectors per se G01T, e.g. G01T1/28, G01T1/29)}
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H01J49/027 3 {detecting image current induced by the movement of charged particles (H01J49/38 takes precedence)}
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H01J49/04 2 Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
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H01J49/0404 3 {Capillaries used for transferring samples or ions (electrospray nozzles H01J49/167)}
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H01J49/0409 3 {Sample holders or containers (containers for retaining a material to be analyzed, B01L3/50, for DNA, C12Q1/6834, for biological materials, G01N33/543)}
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H01J49/0413 4 {for automated handling}
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H01J49/0418 4 {for laser desorption, e.g. matrix-assisted laser desorption/ionisation [MALDI] plates or surface enhanced laser desorption/ionisation [SELDI] plates}
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H01J49/0422 3 {for gaseous samples (interfaces to gas chromatographs G01N30/7206)}
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H01J49/0427 4 {using a membrane permeable to gases}
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H01J49/0431 3 {for liquid samples (interfaces to liquid chromatographs G01N30/7233)}
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H01J49/0436 4 {using a membrane permeable to liquids}
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H01J49/044 4 {with means for preventing droplets from entering the analyzer; Desolvation of droplets}
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H01J49/0445 4 {with means for introducing as a spray, a jet or an aerosol (electrospray ion sources H01J49/165)}
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H01J49/045 5 {with means for using a nebulising gas, i.e. pneumatically assisted}
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H01J49/0454 4 {with means for vaporising using mechanical energy, e.g. by ultrasonic vibrations}
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H01J49/0459 3 {for solid samples}
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H01J49/0463 4 {Desorption by laser or particle beam, followed by ionisation as a separate step (sample holder per se H01J49/0418)}
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H01J49/0468 3 {with means for heating or cooling the sample}
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H01J49/0472 4 {with means for pyrolysis}
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H01J49/0477 4 {using a hot fluid}
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H01J49/0481 4 {with means for collisional cooling}
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H01J49/0486 4 {with means for monitoring the sample temperature}
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H01J49/049 4 {with means for applying heat to desorb the sample; Evaporation}
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H01J49/0495 3 {Vacuum locks; Valves (valves per se F16K)}
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H01J49/06 2 Electron- or ion-optical arrangements
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H01J49/061 3 {Ion deflecting means, e.g. ion gates}
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H01J49/062 3 {Ion guides (linear ion traps performing mass selection H01J49/4225, mass filters H01J49/421)}
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H01J49/063 4 {Multipole ion guides, e.g. quadrupoles, hexapoles}
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H01J49/065 4 {having stacked electrodes, e.g. ring stack, plate stack}
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H01J49/066 5 {Ion funnels}
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H01J49/067 3 {Ion lenses, apertures, skimmers}
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H01J49/068 3 {Mounting, supporting, spacing, or insulating electrodes}
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H01J49/08 2 Electron sources, e.g. for generating photo-electrons, secondary electrons or Auger electrons
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H01J49/10 2 Ion sources; Ion guns
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H01J49/102 3 {using reflex discharge, e.g. Penning ion sources}
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H01J49/105 3 {using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]}
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H01J49/107 3 {Arrangements for using several ion sources}
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H01J49/12 3 using an arc discharge, e.g. of the duoplasmatron type
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H01J49/123 4 {Duoplasmatrons}
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H01J49/126 4 {Other arc discharge ion sources using an applied magnetic field}
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H01J49/14 3 using particle bombardment, e.g. ionisation chambers
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H01J49/142 4 {using a solid target which is not previously vapourised}
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H01J49/145 4 {using chemical ionisation}
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H01J49/147 4 {with electrons, e.g. electron impact ionisation, electron attachment (H01J49/145 takes precedence)}
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H01J49/16 3 using surface ionisation, e.g. field-, thermionic- or photo-emission
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H01J49/161 4 {using photoionisation, e.g. by laser}
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H01J49/162 5 {Direct photo-ionisation, e.g. single photon or multi-photon ionisation}
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H01J49/164 5 {Laser desorption/ionisation, e.g. matrix-assisted laser desorption/ionisation [MALDI] (sample holders H01J49/0418)}
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H01J49/165 4 {Electrospray ionisation}
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H01J49/167 5 {Capillaries and nozzles specially adapted therefor; (electrostatic spraying per se B05B5/00)}
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H01J49/168 4 {field ionisation, e.g. corona discharge (atmospheric pressure corona discharge per se H01T19/00)}
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H01J49/18 3 using spark ionisation
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H01J49/20 2 Magnetic deflection
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H01J49/22 2 Electrostatic deflection
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H01J49/24 2 Vacuum systems, e.g. maintaining desired pressures
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H01J49/26 1 Mass spectrometers or separator tubes
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H01J49/28 2 Static spectrometers
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H01J49/282 3 {using electrostatic analysers}
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H01J49/284 3 {using electrostatic and magnetic sectors with simple focusing, e.g. with parallel fields such as Aston spectrometer}
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H01J49/286 4 {with energy analysis, e.g. Castaing filter (in cathode-ray or electron-beam tubes H01J29/84; electron- or ion-optical arrangements for separating electrons or ions from an analysing or processing beam H01J37/05; micro- or spot-analysing tubes H01J37/252)}
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H01J49/288 5 {using crossed electric and magnetic fields perpendicular to the beam, e.g. Wien filter}
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H01J49/30 3 using magnetic analysers {, e.g. Dempster spectrometer}
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H01J49/305 4 {with several sectors in tandem}
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H01J49/32 3 using double focusing
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H01J49/322 4 {with a magnetic sector of 90 degrees, e.g. Mattauch-Herzog type}
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H01J49/324 4 {with an electrostatic section of 90 degrees, e.g. Nier-Johnson type}
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H01J49/326 4 {with magnetic and electrostatic sectors of 90 degrees}
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H01J49/328 4 {with a cycloidal trajectory by using crossed electric and magnetic fields, e.g. trochoidal type}
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H01J49/34 2 Dynamic spectrometers
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H01J49/36 3 Radio frequency spectrometers, e.g. Bennett-type spectrometers, Redhead-type spectrometers
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H01J49/38 4 Omegatrons {; using ion cyclotron resonance}
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H01J49/40 3 Time-of-flight spectrometers (H01J49/36 takes precedence)
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H01J49/401 4 {characterised by orthogonal acceleration, e.g. focusing or selecting the ions, pusher electrode}
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H01J49/403 4 {characterised by the acceleration optics and/or the extraction fields}
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H01J49/405 4 {characterised by the reflectron, e.g. curved field, electrode shapes}
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H01J49/406 4 {with multiple reflections}
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H01J49/408 4 {with multiple changes of direction, e.g. by using electric or magnetic sectors, closed-loop time-of-flight}
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H01J49/42 3 Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
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H01J49/4205 4 {Device types}
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H01J49/421 5 {Mass filters, i.e. deviating unwanted ions without trapping}
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H01J49/4215 6 {Quadrupole mass filters (H01J49/4225 takes precedence)}
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H01J49/422 5 {Two-dimensional RF ion traps (ion guides without mass selection H01J49/062)}
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H01J49/4225 6 {Multipole linear ion traps, e.g. quadrupoles, hexapoles}
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H01J49/423 6 {with radial ejection}
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H01J49/4235 6 {Stacked rings or stacked plates}
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H01J49/424 5 {Three-dimensional ion traps, i.e. comprising end-cap and ring electrodes}
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H01J49/4245 5 {Electrostatic ion traps (H01J49/422 takes precedence)}
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H01J49/425 6 {with a logarithmic radial electric potential, e.g. orbitraps}
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H01J49/4255 5 {with particular constructional features}
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H01J49/426 4 {Methods for controlling ions}
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H01J49/4265 5 {Controlling the number of trapped ions; preventing space charge effects}
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H01J49/427 5 {Ejection and selection methods}
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H01J49/4275 6 {Applying a non-resonant auxiliary oscillating voltage, e.g. parametric excitation}
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H01J49/428 6 {Applying a notched broadband signal}
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H01J49/4285 6 {Applying a resonant signal, e.g. selective resonant ejection matching the secular frequency of ions (H01J49/429, H01J49/428 take precedence)}
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H01J49/429 6 {Scanning an electric parameter, e.g. voltage amplitude or frequency}
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H01J49/4295 5 {Storage methods}
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H01J49/44 1 Energy spectrometers, e.g. alpha-, beta-spectrometers
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H01J49/443 2 {Dynamic spectrometers}
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H01J49/446 3 {Time-of-flight spectrometers}
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H01J49/46 2 Static spectrometers
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H01J49/463 3 {using static magnetic fields}
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H01J49/466 3 {using crossed electric and magnetic fields perpendicular to the beam, e.g. Wien filter (see also H01J49/288)}
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H01J49/48 3 using electrostatic analysers, e.g. cylindrical sector, Wien filter
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H01J49/482 4 {with cylindrical mirrors}
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H01J49/484 4 {with spherical mirrors}
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H01J49/486 4 {with plane mirrors, i.e. uniform field}
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H01J49/488 4 {with retarding grids}
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H01J61/00 0 Gas-discharge or vapour-discharge lamps (arc lamps with consumable electrodes H05B; electroluminescent lamps H05B)
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H01J61/02 1 Details
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H01J61/025 2 {Associated optical elements}
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H01J61/04 2 Electrodes (for igniting H01J61/54); Screens; Shields
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H01J61/045 3 {Thermic screens or reflectors (heat-reflecting coatings on the wall of the vessel H01J61/35)}
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H01J61/06 3 Main electrodes
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H01J61/067 4 for low-pressure discharge lamps
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H01J61/0672 5 {characterised by the construction of the electrode}
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H01J61/0675 5 {characterised by the material of the electrode}
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H01J61/0677 6 {characterised by the electron emissive material}
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H01J61/073 4 for high-pressure discharge lamps
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H01J61/0732 5 {characterised by the construction of the electrode}
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H01J61/0735 5 {characterised by the material of the electrode}
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H01J61/0737 6 {characterised by the electron emissive material}
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H01J61/09 4 Hollow cathodes
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H01J61/10 3 Shields, screens, or guides for influencing the discharge
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H01J61/103 4 {Shields, screens or guides arranged to extend the discharge path (H01J61/106 takes precedence)}
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H01J61/106 4 {using magnetic means}
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H01J61/12 2 Selection of substances for gas fillings; Specified operating pressure or temperature
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H01J61/125 3 {having an halogenide as principal component}
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H01J61/14 3 having one or more carbon compounds as the principal constituents
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H01J61/16 3 having helium, argon, neon, krypton, or xenon as the principle constituent
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H01J61/18 3 having a metallic vapour as the principal constituent
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H01J61/20 4 mercury vapour
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H01J61/22 4 vapour of an alkali metal
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H01J61/24 2 Means for obtaining or maintaining the desired pressure within the vessel
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H01J61/26 3 Means for absorbing or adsorbing gas, e.g. by gettering; Means for preventing blackening of the envelope
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H01J61/28 3 Means for producing, introducing, or replenishing gas or vapour during operation of the lamp
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H01J61/30 2 Vessels; Containers
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H01J61/302 3 {characterised by the material of the vessel}
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H01J61/305 3 {Flat vessels or containers}
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H01J61/307 4 {with folded elongated discharge path}
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H01J61/32 3 Special longitudinal shape, e.g. for advertising purposes {(H01J61/305 takes precedence)}
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H01J61/322 4 {Circular lamps}
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H01J61/325 4 {U-shaped lamps}
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H01J61/327 4 {"Compact"-lamps, i.e. lamps having a folded discharge path}
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H01J61/33 3 Special shape of cross-section, e.g. for producing cool spot
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H01J61/34 3 Double-wall vessels or containers
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H01J61/35 3 provided with coatings on the walls thereof; Selection of materials for the coatings (using coloured coatings H01J61/40; using luminescent coatings H01J61/42)
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H01J61/36 2 Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
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H01J61/361 3 {Seals between parts of vessel}
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H01J61/363 4 {End-disc seals or plug seals}
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H01J61/365 4 {Annular seals disposed between the ends of the vessel (H01J61/363 takes precedence)}
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H01J61/366 3 {Seals for leading-in conductors}
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H01J61/368 4 {Pinched seals or analogous seals}
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H01J61/38 2 Devices for influencing the colour or wavelength of the light
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H01J61/40 3 by light filters; by coloured coatings in or on the envelope
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H01J61/42 3 by transforming the wavelength of the light by luminescence
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H01J61/44 4 Devices characterised by the luminescent material
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H01J61/46 4 Devices characterised by the binder or other non-luminescent constituent of the luminescent material, e.g. for obtaining desired pouring or drying properties
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H01J61/48 4 Separate coatings of different luminous materials
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H01J61/50 2 Auxiliary parts or solid material within the envelope for reducing risk of explosion upon breakage of the envelope, e.g. for use in mines
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H01J61/52 2 Cooling arrangements; Heating arrangements; Means for circulating gas or vapour within the discharge space {(heating or cooling arrangements to promote ionisation for starting H01J61/54)}
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H01J61/523 3 {Heating or cooling particular parts of the lamp}
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H01J61/526 4 {heating or cooling of electrodes}
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H01J61/54 2 Igniting arrangements, e.g. promoting ionisation for starting
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H01J61/541 3 {using a bimetal switch}
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H01J61/542 4 {and an auxiliary electrode inside the vessel}
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H01J61/544 4 {and an auxiliary electrode outside the vessel}
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H01J61/545 3 {using an auxiliary electrode inside the vessel (H01J61/542 takes precedence)}
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H01J61/547 3 {using an auxiliary electrode outside the vessel (H01J61/544 takes precedence)}
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H01J61/548 3 {using radioactive means to promote ionisation}
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H01J61/56 2 One or more circuit elements structurally associated with the lamp
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H01J61/58 1 Lamps with both liquid anode and liquid cathode
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H01J61/60 1 Lamps in which the discharge space is substantially filled with mercury before ignition
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H01J61/62 1 Lamps with gaseous cathode, e.g. plasma cathode
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H01J61/64 1 Cathode glow lamps
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H01J61/66 2 having one or more specially shaped cathodes, e.g. for advertising purposes {alphanumeric}
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H01J61/68 1 Lamps in which the main discharge is between parts of a current-carrying guide, e.g. halo lamp
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H01J61/70 1 Lamps with low-pressure unconstricted discharge {having a cold pressure < 400 Torr}
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H01J61/72 2 having a main light-emitting filling of easily vaporisable metal vapour, e.g. mercury
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H01J61/74 2 having a main light-emitting filling of difficult vaporisable metal vapour, e.g. sodium
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H01J61/76 2 having a filling of permanent gas or gases only
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H01J61/78 3 with cold cathode; with cathode heated only by discharge, e.g. high-tension lamp for advertising
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H01J61/80 2 Lamps suitable only for intermittent operation, e.g. flash lamp
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H01J61/82 1 Lamps with high-pressure unconstricted discharge {having a cold pressure > 400 Torr}
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H01J61/822 2 {High-pressure mercury lamps}
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H01J61/825 2 {High-pressure sodium lamps}
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H01J61/827 2 {Metal halide arc lamps}
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H01J61/84 1 Lamps with discharge constricted by high pressure
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H01J61/86 2 with discharge additionally constricted by close spacing of electrodes, e.g. for optical projection
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H01J61/88 2 with discharge additionally constricted by envelope
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H01J61/90 2 Lamps suitable only for intermittent operation, e.g. flash lamp
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H01J61/92 1 Lamps with more than one main discharge path
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H01J61/94 2 Paths producing light of different wavelengths, e.g. for simulating daylight
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H01J61/95 1 Lamps with control electrode for varying intensity or wavelength of the light, e.g. for producing modulated light
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H01J61/96 1 Lamps with light-emitting discharge path and separately-heated incandescent body within a common envelope, e.g. for simulating daylight
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H01J61/98 1 Lamps with closely spaced electrodes heated to incandescence by light-emitting discharge, e.g. tungsten arc lamp
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H01J63/00 0 Cathode-ray or electron-stream lamps
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H01J63/02 1 Details, e.g. electrode, gas filling, shape of vessel
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H01J63/04 2 Vessels provided with luminescent coatings; Selection of materials for the coatings
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H01J63/06 1 Lamps with luminescent screen excited by the ray or stream
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H01J63/08 1 Lamps with gas plasma excited by the ray or stream
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H01J65/00 0 Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
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H01J65/04 1 Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating {plasma display panels}
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H01J65/042 2 {by an external electromagnetic field}
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H01J65/044 3 {the field being produced by a separate microwave unit}
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H01J65/046 3 {the field being produced by using capacitive means around the vessel}
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H01J65/048 3 {the field being produced by using an excitation coil}
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H01J65/06 1 Lamps in which a gas filling is excited to luminesce by radioactive material structurally associated with the lamp, e.g. inside the vessel
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H01J65/08 1 Lamps in which a screen or coating is excited to luminesce by radioactive material located inside the vessel {(direct conversion of radiation energy from radioactive sources into light G21H3/02)}
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H01J99/00 0 Subject matter not provided for in other groups of this subclass
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H01J2201/00 0 Electrodes common to discharge tubes
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H01J2201/02 1 Arrangements for eliminating deleterious effects
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H01J2201/025 2 charging
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H01J2201/19 1 Thermionic cathodes
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H01J2201/193 2 Thin film cathodes
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H01J2201/196 2 Emission assisted by other physical processes, e.g. field- or photo emission
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H01J2201/28 1 Heaters for thermionic cathodes
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H01J2201/2803 2 Characterised by the shape or size
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H01J2201/2807 3 Block
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H01J2201/281 3 Cage-like construction
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H01J2201/2814 4 being a mesh-like network
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H01J2201/2817 3 Rods
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H01J2201/2821 3 Envelope or cross-section
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H01J2201/2825 4 being oval or elliptic
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H01J2201/2828 4 being rectangular or square
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H01J2201/2832 4 being circular
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H01J2201/2835 3 Folded
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H01J2201/2839 4 Hair-pin or simple bend
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H01J2201/2842 3 Conic
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H01J2201/2846 3 Loop
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H01J2201/285 3 Plurality of elements
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H01J2201/2853 3 Serpentine
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H01J2201/2857 4 being coiled
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H01J2201/286 4 being looped
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H01J2201/2864 3 Ribbon or bar
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H01J2201/2867 3 Spiral or helix
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H01J2201/2871 4 being flattened
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H01J2201/2875 4 being double, reverse helix or interwoven
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H01J2201/2878 3 Thin film or film-like
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H01J2201/2882 3 Variable winding density
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H01J2201/2885 3 Twisted
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H01J2201/2889 2 Characterised by material
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H01J2201/2892 2 Coatings
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H01J2201/2896 3 Insulating layers
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H01J2201/30 1 Cold cathodes
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H01J2201/304 2 Field emission cathodes
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H01J2201/30403 3 characterised by the emitter shape
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H01J2201/30407 4 Microengineered point emitters
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H01J2201/30411 5 conical shaped, e.g. Spindt type
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H01J2201/30415 5 needle shaped
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H01J2201/30419 4 Pillar shaped emitters
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H01J2201/30423 4 Microengineered edge emitters
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H01J2201/30426 4 Coatings on the emitter surface, e.g. with low work function materials
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H01J2201/3043 4 Fibres
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H01J2201/30434 4 Nanotubes
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H01J2201/30438 4 Particles
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H01J2201/30442 4 Whiskers
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H01J2201/30446 3 characterised by the emitter material
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H01J2201/30449 4 Metals and metal alloys
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H01J2201/30453 4 Carbon types
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H01J2201/30457 5 Diamond
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H01J2201/30461 5 Graphite
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H01J2201/30465 5 Fullerenes
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H01J2201/30469 5 Carbon nanotubes (CNTs)
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H01J2201/30473 5 Amorphous carbon
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H01J2201/30476 5 Diamond-like carbon [DLC]
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H01J2201/3048 4 Semiconductor materials
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H01J2201/30484 4 Carbides
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H01J2201/30488 4 Nitrides
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H01J2201/30492 4 Borides
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H01J2201/30496 4 Oxides
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H01J2201/306 2 Ferroelectric cathodes
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H01J2201/308 2 Semiconductor cathodes, e.g. having PN junction layers
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H01J2201/312 2 having an electric field perpendicular to the surface thereof
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H01J2201/3125 3 Metal-insulator-Metal [MIM] emission type cathodes
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H01J2201/316 2 having an electric field parallel to the surface thereof, e.g. thin film cathodes
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H01J2201/3165 3 Surface conduction emission type cathodes
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H01J2201/317 2 combined with other synergetic effects, e.g. secondary, photo- or thermal emission
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H01J2201/319 2 Circuit elements associated with the emitters by direct integration
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H01J2201/3195 3 Resistive members, e.g. resistive layers
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H01J2201/32 1 Secondary emission electrodes
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H01J2201/34 1 Photoemissive electrodes
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H01J2201/342 2 Cathodes
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H01J2201/3421 3 Composition of the emitting surface
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H01J2201/3423 4 Semiconductors, e.g. GaAs, NEA emitters
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H01J2201/3425 4 Metals, metal alloys
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H01J2201/3426 4 Alkaline metal compounds, e.g. Na-K-Sb
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H01J2201/3428 4 Organo-metallic compounds, e.g. Ferrocene
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H01J2203/00 0 Electron or ion optical arrangements common to discharge tubes or lamps
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H01J2203/02 1 Electron guns
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H01J2203/0204 2 using cold cathodes, e.g. field emission cathodes
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H01J2203/0208 3 Control electrodes
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H01J2203/0212 4 Gate electrodes
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H01J2203/0216 5 characterised by the form or structure
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H01J2203/022 6 Shapes or dimensions of gate openings
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H01J2203/0224 6 Arrangement of gate openings
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H01J2203/0228 6 Curved/extending upwardly
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H01J2203/0236 5 Relative position to the emitters, cathodes or substrates
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H01J2203/024 4 Focusing electrodes
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H01J2203/0244 5 characterised by the form or structure
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H01J2203/0248 6 Shapes or dimensions of focusing electrode openings
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H01J2203/0252 6 Arrangement of focusing electrode openings
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H01J2203/0256 5 characterised by the material
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H01J2203/026 5 Relative position to the gateelectrodes, emitters, cathodes or substrates
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H01J2203/0264 6 In the same plane as the gate electrodes or cathodes
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H01J2203/0268 3 Insulation layer
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H01J2203/0272 4 for gate electrodes
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H01J2203/0276 4 for focusing electrodes
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H01J2203/028 4 characterised by the shape
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H01J2203/0284 5 Dimensions of openings
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H01J2203/0288 4 characterised by the material
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H01J2203/0292 3 Potentials applied to the electrodes
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H01J2203/0296 2 Spin-polarised beams
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H01J2203/04 1 Ion guns
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H01J2209/00 0 Apparatus and processes for manufacture of discharge tubes
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H01J2209/01 1 Generalised techniques
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H01J2209/012 2 Coating
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H01J2209/015 3 Machines therefor
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H01J2209/017 2 Cleaning
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H01J2209/02 1 Manufacture of cathodes
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H01J2209/022 2 Cold cathodes
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H01J2209/0223 3 Field emission cathodes
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H01J2209/0226 4 Sharpening or resharpening of emitting point or edge
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H01J2209/18 1 Assembling together the component parts of the discharge tube
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H01J2209/185 2 Machines therefor, e.g. electron gun assembling devices
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H01J2209/236 1 Manufacture of magnetic deflecting devices
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H01J2209/2363 2 Coils
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H01J2209/2366 3 Machines therefor, e.g. winding, forming, welding, or the like
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H01J2209/26 1 Sealing parts of the vessel to provide a vacuum enclosure
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H01J2209/261 2 Apparatus used for sealing vessels, e.g. furnaces, machines or the like
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H01J2209/262 3 means for applying sealing materials, e.g. frit paste dispensers
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H01J2209/264 2 Materials for sealing vessels, e.g. frit glass compounds, resins or structures
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H01J2209/265 2 Surfaces for sealing vessels
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H01J2209/267 3 shaped surfaces or flanges
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H01J2209/268 3 treated surfaces and surface preparations, e.g. to improve adhesion
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H01J2209/38 1 Control of maintenance of pressure in the vessel
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H01J2209/383 2 Vacuum pumps
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H01J2209/385 2 Gettering
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H01J2209/3855 3 Getter materials
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H01J2209/387 2 Gas filling
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H01J2209/389 2 Degassing
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H01J2209/3893 3 by a discharge
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H01J2209/3896 3 by heating
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H01J2209/46 1 Handling of tube components during manufacture
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H01J2209/463 2 Identifying or selecting component pieces
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H01J2209/466 3 Marking, e.g. bar-codes
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H01J2211/00 0 Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
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H01J2211/10 1 AC-PDPs with at least one main electrode being out of contact with the plasma
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H01J2211/12 2 with main electrodes provided on both sides of the discharge space
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H01J2211/14 2 with main electrodes provided only on one side of the discharge space
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H01J2211/16 2 with main electrodes provided inside or on the side face of the spacers
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H01J2211/18 2 containing a plurality of independent closed structures for containing the gas, e.g. plasma tube array [PTA] display panels
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H01J2211/20 1 Constructional details
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H01J2211/22 2 Electrodes
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H01J2211/225 3 Material of electrodes
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H01J2211/24 3 Sustain electrodes or scan electrodes
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H01J2211/245 4 Shape, e.g. cross section or pattern
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H01J2211/26 3 Address electrodes
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H01J2211/265 4 Shape, e.g. cross section or pattern
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H01J2211/28 3 Auxiliary electrodes, e.g. priming electrodes or trigger electrodes
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H01J2211/30 3 Floating electrodes
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H01J2211/32 3 Disposition of the electrodes
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H01J2211/323 4 Mutual disposition of electrodes
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H01J2211/326 4 Disposition of electrodes with respect to cell parameters (H01J2211/323 takes precedence), e.g. electrodes within the ribs
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H01J2211/34 2 Vessels, containers or parts thereof, e.g. substrates
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H01J2211/36 3 Spacers, barriers, ribs, partitions or the like
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H01J2211/361 4 characterized by the shape
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H01J2211/363 5 Cross section of the spacers
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H01J2211/365 5 Pattern of the spacers
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H01J2211/366 4 characterized by the material
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H01J2211/368 4 Dummy spacers, e.g. in a non display region
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H01J2211/38 3 Dielectric or insulating layers
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H01J2211/40 3 Layers for protecting or enhancing the electron emission, e.g. MgO layers
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H01J2211/42 3 Fluorescent layers
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H01J2211/44 3 Optical arrangements or shielding arrangements, e.g. filters or lenses
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H01J2211/442 4 Light reflecting means; Anti-reflection means
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H01J2211/444 4 Means for improving contrast or colour purity, e.g. black matrix or light shielding means
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H01J2211/446 4 Electromagnetic shielding means; Antistatic means
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H01J2211/448 4 Near infrared shielding means
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H01J2211/46 2 Connecting or feeding means, e.g. leading-in conductors
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H01J2211/48 2 Sealing, e.g. seals specially adapted for leading-in conductors
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H01J2211/50 2 Filling, e.g. selection of gas mixture
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H01J2211/52 2 Means for absorbing or adsorbing the gas mixture, e.g. by gettering
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H01J2211/54 2 Means for exhausting the gas
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H01J2211/62 2 Circuit arrangements (circuits or methods for driving PDP's G09G3/28)
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H01J2211/66 2 Cooling arrangements (cooling or supporting means not being part of the tube H05K)
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H01J2217/00 0 Gas-filled discharge tubes
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H01J2217/04 1 Electrodes (for display panels not making use of alternating current H01J2217/492; for discharge tubes in general H01J2201/00)
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H01J2217/06 2 Cathodes
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H01J2217/062 3 thermionic
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H01J2217/065 3 heated by the discharge
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H01J2217/067 3 Cold cathodes
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H01J2217/10 2 Anodes
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H01J2217/12 2 Control electrodes
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H01J2217/38 1 Cold-cathode tubes
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H01J2217/40 2 Gas discharge switches
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H01J2217/402 3 Multiple switches
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H01J2217/4025 4 for addressing electro-optical devices, i.e. LCD's
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H01J2217/49 2 Display panels, e.g. not making use of alternating current (H01J2211/10 takes precedence)
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H01J2217/491 3 characterised by problems peculiar to plasma displays
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H01J2217/4915 4 Luminosity
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H01J2217/492 3 Details
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H01J2217/49207 4 Electrodes
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H01J2217/49214 5 Shape
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H01J2217/49221 5 Mutual disposition
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H01J2217/49228 6 Crossed electrodes
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H01J2217/49235 6 Side-by-side electrodes
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H01J2217/49242 6 Auxiliary electrodes
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H01J2217/4925 5 Mounting, supporting, spacing
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H01J2217/49257 5 Means for isolating electrodes from the discharge, e.g. dielectric layers
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H01J2217/49264 4 Vessels
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H01J2217/49271 5 Spacers between front and back panels
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H01J2217/49278 5 Coatings (H01J2217/49292 takes precedence)
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H01J2217/49285 4 Associated optical means
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H01J2217/49292 5 Filters
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H01J2217/494 3 A.C. panels
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H01J2217/498 3 Hybrid panels (AC and DC)
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H01J2223/00 0 Details of transit-time tubes of the types covered by group H01J2225/00
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H01J2223/005 1 Cooling methods or arrangements
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H01J2223/02 1 Electrodes; Magnetic control means; Screens
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H01J2223/027 2 Collectors
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H01J2223/0275 3 Multistage collectors
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H01J2223/033 3 Collector cooling devices
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H01J2223/04 2 Cathodes
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H01J2223/05 3 having a cylindrical emissive surface, e.g. cathodes for magnetrons
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H01J2223/06 2 Electron or ion guns
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H01J2223/065 3 producing a solid cylindrical beam
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H01J2223/07 3 producing a hollow cylindrical beam
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H01J2223/075 3 Magnetron injection guns
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H01J2223/08 2 Focusing arrangements, e.g. for concentrating stream of electrons, for preventing spreading of stream
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H01J2223/083 3 Electrostatic focusing arrangements
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H01J2223/087 3 Magnetic focusing arrangements
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H01J2223/0873 4 with at least one axial- field reversal along the interaction space, e.g. P.P.M. focusing
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H01J2223/0876 4 with arrangements improving the linearity and homogeniety of the axial field, e.g. field straightener
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H01J2223/09 2 Electric system for directing or deflecting the discharge along a desired path, e.g. E-type
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H01J2223/10 2 Magnet systems for directing or deflecting the discharge along a desired path, e.g. a spiral path
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H01J2223/11 2 Means for reducing noise
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H01J2223/12 1 Vessels; Containers
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H01J2223/14 1 Leading-in arrangements; Seals therefor
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H01J2223/15 2 Means for preventing wave energy leakage structurally associated with tube leading-in arrangements, e.g. filters, chokes, attenuating devices
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H01J2223/16 1 Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
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H01J2223/165 2 Manufacturing processes or apparatus therefore
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H01J2223/18 2 Resonators
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H01J2223/20 3 Cavity resonators; Adjustment or tuning thereof
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H01J2223/207 4 Tuning of single resonator
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H01J2223/213 4 Simultaneous tuning of more than one resonator, e.g. resonant cavities of a magnetron
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H01J2223/22 3 Connections between resonators, e.g. strapping for connecting resonators of a magnetron
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H01J2223/24 2 Slow-wave structures, e.g. delay systems
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H01J2223/26 3 Helical slow-wave structures; Adjustment therefor
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H01J2223/27 4 Helix-derived slow-wave structures
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H01J2223/28 3 Interdigital slow-wave structures; Adjustment therefor
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H01J2223/30 3 Damping arrangements associated with slow-wave structures, e.g. for suppression of unwanted oscillations
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H01J2223/34 1 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
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H01J2223/36 1 Coupling devices having distributed capacitance and inductance, structurally associated with the tube, for introducing or removing wave energy
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H01J2223/38 2 to or from the discharge
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H01J2223/40 2 to or from the interaction circuit
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H01J2223/42 3 the interaction circuit being a helix or a helix-derived slow- wave structure
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H01J2223/44 3 Rod-type coupling devices
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H01J2223/46 3 Loop coupling devices
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H01J2223/48 3 for linking interaction circuit with coaxial lines; Devices of the coupled helices type
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H01J2223/50 4 the interaction circuit being a helix or derived from a helix
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H01J2223/52 4 the coupled helices being disposed coaxially around one another
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H01J2223/54 2 Filtering devices preventing unwanted frequencies or modes to be coupled to, or out of, the interaction circuit; Prevention of high frequency leakage in the environment
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H01J2225/00 0 Transit-time tubes, e.g. Klystrons, travelling-wave tubes, magnetrons
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H01J2225/005 1 Gas-filled transit-time tubes
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H01J2225/02 1 Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
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H01J2225/025 2 with an electron stream following a helical path
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H01J2225/04 2 Tubes having one or more resonators, without reflection of the electron stream, and in which the modulation produced in the modulator zone is mainly density modulation, e.g. Heaff tube
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H01J2225/06 2 Tubes having only one resonator, without reflection of the electron stream, and in which the modulation produced in the modulator zone is mainly velocity modulation, e.g. Lüdi-Klystron
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H01J2225/08 3 with electron stream perpendicular to the axis of the resonator
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H01J2225/10 2 Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
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H01J2225/11 3 Extended interaction Klystrons
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H01J2225/12 3 with pencil-like electron stream in the axis of the resonators
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H01J2225/14 3 with tube-like electron stream coaxial with the axis of the resonators
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H01J2225/16 3 with pencil-like electron stream perpendicular to the axis of the resonators
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H01J2225/18 3 with radial or disc-like electron stream perpendicular to the axis of the resonators
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H01J2225/20 3 having special arrangements in the space between resonators, e.g. resistive-wall amplifier tube, space-charge amplifier tube, velocity- jump tube
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H01J2225/22 2 Reflex Klystrons, i.e. tubes having one or more resonators, with a single reflection of the electron stream, and in which the stream is modulated mainly by velocity in the modulator zone
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H01J2225/24 3 in which the electron stream is in the axis of the resonator or resonators and is pencil-like before reflection
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H01J2225/26 3 in which the electron stream is coaxial with the axis of the resonator or resonators and is tube-like before reflection
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H01J2225/28 3 in which the electron stream is perpendicular to the axis of the resonator or resonators and is pencil-like before reflection
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H01J2225/30 3 in which the electron stream is perpendicular to the axis of the resonator or resonators and is radial or disc-like before reflection
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H01J2225/32 2 Tubes with plural reflection, e.g. Coeterier tube
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H01J2225/34 1 Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
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H01J2225/36 2 Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and without magnet system producing an H-field crossing the E-field
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H01J2225/38 3 the forward travelling wave being utilised
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H01J2225/40 3 the backward travelling wave being utilised
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H01J2225/42 2 Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field
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H01J2225/44 3 the forward travelling wave being utilised
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H01J2225/46 3 the backward travelling wave being utilised
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H01J2225/48 2 Tubes in which two electron streams of different velocities interact with one another, e.g. electron-wave tube
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H01J2225/49 2 Tubes using the parametric principle, e.g. for parametric amplification
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H01J2225/50 1 Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
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H01J2225/52 2 with an electron space having a shape that does not prevent any electron from moving completely around the cathode or guide electrode
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H01J2225/54 3 having only one cavity or other resonator, e.g. neutrode tube
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H01J2225/55 4 Coaxial cavity magnetrons
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H01J2225/56 4 with interdigital arrangements of anodes, e.g. turbator tube
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H01J2225/58 3 having a number of resonators; having a composite resonator, e.g. a helix
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H01J2225/587 4 Multi-cavity magnetrons
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H01J2225/593 5 Rising-sun magnetrons
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H01J2225/60 2 with an electron space having a shape that prevents any electron from moving completely around the cathode or guide electrode; Linear magnetrons
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H01J2225/61 1 Hybrid tubes, i.e. tubes comprising a klystron section and a travelling-wave section
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H01J2225/62 1 Strophotrons, i.e. tubes with H-field crossing the E-field and functioning with plural reflection
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H01J2225/64 1 Turbine tubes, i.e. tubes with H-field crossing the E-field and functioning with reversed cyclotron action
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H01J2225/66 1 Tubes with electron stream crossing itself and thereby interacting or interfering with itself
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H01J2225/68 1 Tubes specially designed to act as oscillator with positive grid and retarding field, e.g. for Barkhausen-Kurz oscillators
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H01J2225/70 2 with resonator having distributed inductance with capacitance, e.g. Pintsch tube
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H01J2225/72 2 in which a standing wave or a considerable part thereof is produced along an electrode, e.g. Clavier tube
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H01J2225/74 1 Tubes specially designed to act as transit-time diode oscillators, e.g. monotron
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H01J2225/76 1 Dynamic electron-multiplier tubes, e.g. Farnsworth multiplier tube, multipactor
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H01J2225/78 1 Tubes with electron stream modulated by deflection in a resonator
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H01J2229/00 0 Details of cathode ray tubes or electron beam tubes (H01J2329/00 takes precedence)
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H01J2229/0007 1 Elimination of unwanted or stray electromagnetic effects
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H01J2229/0015 2 Preventing or cancelling fields leaving the enclosure
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H01J2229/0023 3 Passive means
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H01J2229/003 2 Preventing or cancelling fields entering the enclosure
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H01J2229/0038 3 Active means
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H01J2229/0046 2 Preventing or cancelling fields within the enclosure
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H01J2229/0053 3 Demagnetisation
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H01J2229/0061 1 Cooling arrangements
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H01J2229/0069 2 Active means, e.g. fluid flow
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H01J2229/0076 3 applied to the faceplate
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H01J2229/0084 4 Translucent coolant, e.g. flowing across faceplate
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H01J2229/0092 2 Passive means, e.g. fins, heat conductors
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H01J2229/07 1 Shadow masks
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H01J2229/0705 2 Mounting arrangement of assembly to vessel
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H01J2229/0711 3 Spring and plate (clip) type
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H01J2229/0716 2 Mounting arrangements of aperture plate to frame or vessel
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H01J2229/0722 2 Frame
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H01J2229/0727 2 Aperture plate
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H01J2229/0733 3 characterised by the material
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H01J2229/0738 3 Mitigating undesirable mechanical effects
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H01J2229/0744 4 Vibrations
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H01J2229/075 3 Beam passing apertures, e.g. geometrical arrangements
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H01J2229/0755 4 characterised by aperture shape
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H01J2229/0761 5 Uniaxial masks having parallel slit apertures, i.e. Trinitron type
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H01J2229/0766 3 Details of skirt or border
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H01J2229/0772 4 Apertures, cut-outs, depressions, or the like
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H01J2229/0777 3 Coatings
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H01J2229/0783 4 improving thermal radiation properties
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H01J2229/0788 3 Parameterised dimensions of aperture plate, e.g. relationships, polynomial expressions
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H01J2229/0794 2 Geometrical arrangements, e.g. curvature
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H01J2229/18 1 Phosphor screens
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H01J2229/183 2 multi-layer
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H01J2229/186 2 Geometrical arrangement of phosphors
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H01J2229/48 1 Electron guns
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H01J2229/4803 2 Electrodes
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H01J2229/4806 3 Shield centering cups
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H01J2229/481 3 Focusing electrodes
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H01J2229/4813 4 Pre-focusing
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H01J2229/4817 3 Accelerating electrodes
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H01J2229/482 3 Extraction grids
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H01J2229/4824 2 Constructional arrangements of electrodes
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H01J2229/4827 3 Electrodes formed on surface of common cylindrical support
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H01J2229/4831 3 Electrode supports
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H01J2229/4834 2 Electrical arrangements coupled to electrodes, e.g. potentials
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H01J2229/4837 3 characterised by the potentials applied
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H01J2229/4841 4 Dynamic potentials
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H01J2229/4844 2 characterised by beam passing apertures or combinations
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H01J2229/4848 3 Aperture shape as viewed along beam axis
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H01J2229/4851 4 trapezoidal
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H01J2229/4855 5 with rounded end or ends
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H01J2229/4858 4 parallelogram
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H01J2229/4862 5 square
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H01J2229/4865 5 rectangle
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H01J2229/4868 6 with rounded end or ends
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H01J2229/4872 4 circular
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H01J2229/4875 4 oval
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H01J2229/4879 4 non-symmetric about field scanning axis
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H01J2229/4882 4 non-symmetric about line scanning axis
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H01J2229/4886 4 polygonal
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H01J2229/4889 5 cross shaped
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H01J2229/4893 4 Interconnected apertures
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H01J2229/4896 4 complex and not provided for
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H01J2229/50 2 Plurality of guns or beams
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H01J2229/502 3 Three beam guns, e.g. for colour CRTs
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H01J2229/505 3 Arrays
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H01J2229/507 3 Multi-beam groups, e.g. number of beams greater than number of cathodes
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H01J2229/56 1 Correction of beam optics
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H01J2229/563 2 Aberrations by type
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H01J2229/5632 3 Spherical
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H01J2229/5635 3 Astigmatism
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H01J2229/5637 3 Colour purity
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H01J2229/568 2 using supplementary correction devices
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H01J2229/5681 3 magnetic
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H01J2229/5682 4 Permanently magnetised materials, e.g. permanent magnets
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H01J2229/5684 4 Magnetic materials, e.g. soft iron
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H01J2229/5685 5 Cross-arms field shaper
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H01J2229/5687 4 Auxiliary coils
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H01J2229/5688 5 Velocity modulation
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H01J2229/58 1 Electron beam control inside the vessel
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H01J2229/581 2 by magnetic means
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H01J2229/582 2 by electrostatic means
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H01J2229/583 2 at the source
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H01J2229/5835 3 cooperating with the electron gun
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H01J2229/585 2 at the screen
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H01J2229/587 2 between the source and the screen
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H01J2229/70 1 Electron beam control outside the vessel
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H01J2229/703 2 by magnetic fields
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H01J2229/7031 3 Cores for field producing elements, e.g. ferrite
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H01J2229/7032 3 Conductor design and distribution
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H01J2229/7033 4 Winding
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H01J2229/7035 4 Wires and conductors
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H01J2229/7036 5 Form of conductor
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H01J2229/7037 6 flat, e.g. foil, or ribbon type
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H01J2229/7038 3 Coil separators and formers
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H01J2229/86 1 Vessels and containers
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H01J2229/8603 2 Neck or cone portions of the CRT vessel
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H01J2229/8606 3 characterised by the shape
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H01J2229/8609 4 Non circular cross-sections
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H01J2229/8613 2 Faceplates
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H01J2229/8616 3 characterised by shape
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H01J2229/862 4 Parameterised shape, e.g. expression, relationship or equation
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H01J2229/8623 2 Substrates
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H01J2229/8626 2 Frames
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H01J2229/863 1 Passive shielding means associated with the vessel
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H01J2229/8631 2 Coatings
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H01J2229/8632 3 characterised by the material
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H01J2229/8633 2 Meshes and patterns
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H01J2229/8634 2 Magnetic shielding
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H01J2229/8635 2 Antistatic shielding
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H01J2229/8636 2 Electromagnetic shielding
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H01J2229/8637 2 Mechanical shielding, e.g. against water or abrasion
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H01J2229/8638 2 Ionising radiation shielding, e.g. X-rays
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H01J2229/87 1 Means for avoiding vessel implosion
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H01J2229/875 2 Means substantially covering the output face, e.g. resin layers, protective panels
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H01J2229/88 1 Coatings
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H01J2229/882 2 having particular electrical resistive or conductive properties
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H01J2229/885 2 having particular electrical insulation properties
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H01J2229/887 2 having particular X-ray shielding properties
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H01J2229/89 1 Optical components associated with the vessel
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H01J2229/8901 2 Fixing of optical components to the vessel
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H01J2229/8903 2 Fibre optic components
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H01J2229/8905 2 Direction sensitive devices for controlled viewing angle
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H01J2229/8907 2 Image projection devices
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H01J2229/8909 2 Baffles, shutters, apertures or the like against external light
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H01J2229/8911 3 Large-scale devices, e.g. foldable screens
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H01J2229/8913 2 Anti-reflection, anti-glare, viewing angle and contrast improving treatments or devices
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H01J2229/8915 3 Surface treatment of vessel or device, e.g. controlled surface roughness
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H01J2229/8916 3 inside the vessel
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H01J2229/8918 3 by using interference effects
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H01J2229/892 3 Effect varying over surface
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H01J2229/8922 3 Apparatus attached to vessel and not integral therewith
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H01J2229/8924 2 having particular properties for protecting the vessel, e.g. against abrasion, water or shock
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H01J2229/8926 2 Active components, e.g. LCD's, indicators, illuminators and moving devices
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H01J2229/8928 2 Laser CRTs
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H01J2229/893 2 using lenses
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H01J2229/899 2 Photographic devices (permanent recording of images)
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H01J2229/92 1 Means providing or assisting electrical connection with or within the tube
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H01J2229/922 2 within the tube
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H01J2229/925 2 associated with the high tension [HT], e.g. anode potentials
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H01J2229/927 2 associated with digital scanning
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H01J2229/94 1 Means for obtaining or maintaining the desired pressure within the tube
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H01J2229/96 1 Circuit elements other than coils, reactors or the like, associated with the tube
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H01J2229/962 2 associated with the HT
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H01J2229/964 2 associated with the deflection system
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H01J2229/966 2 associated with the gun structure
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H01J2229/968 3 Resistors
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H01J2231/00 0 Cathode ray tubes or electron beam tubes (H01J2329/00 takes precedence)
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H01J2231/12 1 CRTs having luminescent screens
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H01J2231/121 2 Means for indicating the position of the beam, e.g. beam indexing
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H01J2231/123 3 by direct current detection, e.g. collecting electrodes
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H01J2231/125 2 with a plurality of electron guns within the tube envelope
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H01J2231/1255 3 two or more neck portions containing one or more guns
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H01J2231/50 1 Imaging and conversion tubes
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H01J2231/50005 2 characterised by form of illumination
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H01J2231/5001 3 Photons
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H01J2231/50015 4 Light
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H01J2231/50021 5 Ultra-violet
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H01J2231/50026 5 Infra-red
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H01J2231/50031 4 High energy photons
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H01J2231/50036 5 X-rays
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H01J2231/50042 3 Particles
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H01J2231/50047 4 Charged particles
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H01J2231/50052 3 Mechanical vibrations, e.g. sound
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H01J2231/50057 2 characterised by form of output stage
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H01J2231/50063 3 Optical
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H01J2231/50068 3 Electrical
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H01J2231/50073 4 Charge coupled device [CCD]
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H01J2231/50078 4 Resistive anode
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H01J2231/50084 4 using light or electron beam scanning
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H01J2231/50089 3 Having optical stage before electrical conversion
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H01J2231/50094 4 Charge coupled device [CCD]
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H01J2231/501 2 including multiplication stage
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H01J2231/5013 3 with secondary emission electrodes
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H01J2231/5016 4 Michrochannel plates [MCP]
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H01J2231/503 2 with scanning or gating optics
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H01J2231/5033 3 electrostatic
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H01J2231/5036 3 magnetic
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H01J2231/505 2 with non-scanning optics
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H01J2231/5053 3 electrostatic
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H01J2231/5056 3 magnetic
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H01J2235/00 0 X-ray tubes
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H01J2235/02 1 Electrical arrangements
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H01J2235/023 2 Connecting of signals or tensions to or through the vessel
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H01J2235/0233 3 High tension
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H01J2235/0236 3 Indirect coupling, e.g. capacitive or inductive
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H01J2235/06 1 Cathode assembly
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H01J2235/062 2 Cold cathodes
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H01J2235/064 2 Movement of cathode
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H01J2235/066 3 Rotation
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H01J2235/068 2 Multi-cathode assembly
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H01J2235/08 1 Targets (anodes) and X-ray converters
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H01J2235/081 2 Target material
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H01J2235/082 3 Fluids, e.g. liquids, gases
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H01J2235/083 2 Bonding or fixing with the support or substrate
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H01J2235/084 3 Target-substrate interlayers or structures, e.g. to control or prevent diffusion or improve adhesion
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H01J2235/085 2 Target treatment, e.g. ageing, heating
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H01J2235/086 2 Target geometry
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H01J2235/088 2 Laminated targets, e.g. plurality of emitting layers of unique or differing materials
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H01J2235/10 1 Drive means for anode (target) substrate
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H01J2235/1006 2 Supports or shafts for target or substrate
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H01J2235/1013 3 Fixing to the target or substrate
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H01J2235/102 3 Materials for the shaft
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H01J2235/1026 2 Means (motors) for driving the target (anode)
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H01J2235/1033 3 mounted within the vacuum vessel
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H01J2235/104 3 characterised by the shape
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H01J2235/1046 2 Bearings and bearing contact surfaces
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H01J2235/1053 3 Retainers or races
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H01J2235/106 3 Dynamic pressure bearings, e.g. helical groove type
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H01J2235/1066 3 Treated contact surfaces, e.g. coatings
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H01J2235/1073 3 Magnetic bearings
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H01J2235/108 2 Lubricants
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H01J2235/1086 3 liquid metals
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H01J2235/1093 2 Measures for preventing vibration
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H01J2235/12 1 Cooling
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H01J2235/1204 2 of the anode
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H01J2235/1208 2 of the bearing assembly
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H01J2235/1212 2 of the cathode
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H01J2235/1216 2 of the vessel
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H01J2235/122 2 of the window
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H01J2235/1225 2 characterised by method
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H01J2235/1229 3 employing layers with high emissivity
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H01J2235/1233 4 characterised by the material
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H01J2235/1237 5 Oxides
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H01J2235/1241 4 Bonding layer to substrate
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H01J2235/1245 3 Increasing emissive surface area
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H01J2235/125 4 with interdigitated fins or slots
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H01J2235/1254 4 with microscopic surface features
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H01J2235/1258 3 Placing objects in close proximity
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H01J2235/1262 3 Circulating fluids
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H01J2235/1266 4 flow being via moving conduit or shaft
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H01J2235/127 4 Control of flow
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H01J2235/1275 4 characterised by the fluid
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H01J2235/1279 5 Liquid metals
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H01J2235/1283 4 in conjunction with extended surfaces (e.g. fins or ridges)
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H01J2235/1287 4 Heat pipes
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H01J2235/1291 3 Thermal conductivity
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H01J2235/1295 4 Contact between conducting bodies
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H01J2235/16 1 Vessels
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H01J2235/161 2 Non-stationary vessels
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H01J2235/162 3 Rotation
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H01J2235/163 2 shaped for a particular application
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H01J2235/164 3 Small cross-section, e.g. for entering in a body cavity
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H01J2235/165 2 Shielding arrangements
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H01J2235/166 3 against electromagnetic radiation
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H01J2235/167 3 against thermal (heat) energy
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H01J2235/168 3 against charged particles
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H01J2235/18 1 Windows, e.g. for X-ray transmission
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H01J2235/183 2 Multi-layer structures
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H01J2235/20 1 Arrangements for controlling gases within the X-ray tube
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H01J2235/205 2 Gettering
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H01J2237/00 0 Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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H01J2237/002 1 Cooling arrangements (of objects being observed or treated H01J2237/2001)
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H01J2237/004 1 Charge control of objects or beams
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H01J2237/0041 2 Neutralising arrangements
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H01J2237/0042 3 Deflection of neutralising particles
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H01J2237/0044 3 of objects being observed or treated
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H01J2237/0045 4 using secondary electrons
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H01J2237/0047 4 using electromagnetic radiations, e.g. UV, X-rays, light
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H01J2237/0048 2 Charging arrangements
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H01J2237/006 1 Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608)
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H01J2237/02 1 Details
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H01J2237/0203 2 Protection arrangements
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H01J2237/0206 3 Extinguishing, preventing or controlling unwanted discharges
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H01J2237/0209 3 Avoiding or diminishing effects of eddy currents
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H01J2237/0213 3 Avoiding deleterious effects due to interactions between particles and tube elements
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H01J2237/0216 2 Means for avoiding or correcting vibration effects
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H01J2237/022 2 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
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H01J2237/0225 3 Detecting or monitoring foreign particles
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H01J2237/024 2 Moving components not otherwise provided for (diaphragms H01J2237/0458; objects H01J2237/202)
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H01J2237/0245 3 Moving whole optical system relatively to object
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H01J2237/026 2 Shields
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H01J2237/0262 3 electrostatic
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H01J2237/0264 3 magnetic
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H01J2237/0266 3 electromagnetic
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H01J2237/0268 3 Liner tubes
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H01J2237/028 2 Particle traps
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H01J2237/03 1 Mounting, supporting, spacing or insulating electrodes
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H01J2237/032 2 Mounting or supporting
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H01J2237/036 2 Spacing
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H01J2237/038 2 Insulating
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H01J2237/04 1 Means for controlling the discharge
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H01J2237/041 2 Beam polarising means
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H01J2237/043 2 Beam blanking
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H01J2237/0432 3 High speed and short duration
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H01J2237/0435 3 Multi-aperture
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H01J2237/0437 4 Semiconductor substrate
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H01J2237/045 2 Diaphragms
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H01J2237/0451 3 with fixed aperture
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H01J2237/0453 4 multiple apertures
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H01J2237/0455 3 with variable aperture
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H01J2237/0456 3 Supports
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H01J2237/0458 4 movable, i.e. for changing between differently sized apertures
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H01J2237/047 2 Changing particle velocity
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H01J2237/0473 3 accelerating
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H01J2237/04732 4 with magnetic means
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H01J2237/04735 4 with electrostatic means
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H01J2237/04737 5 radio-frequency quadrupole [RFQ]
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H01J2237/0475 3 decelerating
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H01J2237/04753 4 with magnetic means
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H01J2237/04756 4 with electrostatic means
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H01J2237/049 2 Focusing means
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H01J2237/0492 3 Lens systems (individual lenses H01J2237/10)
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H01J2237/04922 4 electromagnetic
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H01J2237/04924 4 electrostatic
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H01J2237/04926 4 combined
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H01J2237/04928 4 Telecentric systems
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H01J2237/05 1 Arrangements for energy or mass analysis
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H01J2237/053 2 electrostatic
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H01J2237/0535 3 Mirror analyser
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H01J2237/055 2 magnetic
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H01J2237/057 2 Energy or mass filtering
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H01J2237/06 1 Sources
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H01J2237/061 2 Construction
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H01J2237/062 3 Reducing size of gun
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H01J2237/063 2 Electron sources
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H01J2237/06308 3 Thermionic sources
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H01J2237/06316 4 Schottky emission
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H01J2237/06325 3 Cold-cathode sources
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H01J2237/06333 4 Photo emission
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H01J2237/06341 4 Field emission
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H01J2237/0635 5 Multiple source, e.g. comb or array
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H01J2237/06358 4 Secondary emission
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H01J2237/06366 4 Gas discharge electron sources
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H01J2237/06375 3 Arrangement of electrodes
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H01J2237/06383 3 Spin polarised electron sources
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H01J2237/06391 3 Positron sources
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H01J2237/065 2 Source emittance characteristics
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H01J2237/0653 3 Intensity
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H01J2237/0656 3 Density
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H01J2237/08 2 Ion sources
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H01J2237/0802 3 Field ionization sources
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H01J2237/0805 4 Liquid metal sources
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H01J2237/0807 4 Gas field ion sources [GFIS]
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H01J2237/081 3 Sputtering sources
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H01J2237/0812 3 Ionized cluster beam [ICB] sources
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H01J2237/0815 3 Methods of ionisation
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H01J2237/0817 4 Microwaves
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H01J2237/082 4 Electron beam
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H01J2237/0822 3 Multiple sources
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H01J2237/0825 4 for producing different ions simultaneously
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H01J2237/0827 4 for producing different ions sequentially
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H01J2237/083 2 Beam forming
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H01J2237/0835 3 Variable cross-section or shape
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H01J2237/10 1 Lenses
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H01J2237/103 2 characterised by lens type
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H01J2237/1035 3 Immersion lens
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H01J2237/12 2 electrostatic
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H01J2237/1202 3 Associated circuits
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H01J2237/1205 3 Microlenses
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H01J2237/1207 3 Einzel lenses
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H01J2237/121 3 characterised by shape
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H01J2237/1215 4 Annular electrodes
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H01J2237/14 2 magnetic
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H01J2237/1405 3 Constructional details
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H01J2237/141 4 Coils (superconducting H01J2237/142)
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H01J2237/1415 4 Bores or yokes, i.e. magnetic circuit in general
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H01J2237/142 3 with superconducting coils
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H01J2237/15 1 Means for deflecting or directing discharge
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H01J2237/1501 2 Beam alignment means or procedures
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H01J2237/1502 2 Mechanical adjustments
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H01J2237/1503 3 Mechanical scanning
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H01J2237/1504 2 Associated circuits
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H01J2237/1505 2 Rotating beam around optical axis
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H01J2237/1506 2 Tilting or rocking beam around an axis substantially at an angle to optical axis
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H01J2237/1507 3 dynamically, e.g. to obtain same impinging angle on whole area
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H01J2237/1508 2 Combined electrostatic-electromagnetic means
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H01J2237/151 2 Electrostatic means
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H01J2237/1512 3 Travelling wave deflectors
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H01J2237/1514 3 Prisms
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H01J2237/1516 3 Multipoles
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H01J2237/1518 3 for X-Y scanning
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H01J2237/152 2 Magnetic means
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H01J2237/1523 3 Prisms
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H01J2237/1526 3 For X-Y scanning
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H01J2237/153 1 Correcting image defects, e.g. stigmators
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H01J2237/1532 2 Astigmatism
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H01J2237/1534 2 Aberrations
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H01J2237/1536 2 Image distortions due to scanning
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H01J2237/1538 2 Space charge (Boersch) effect compensation (neutralising means H01J2237/0041)
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H01J2237/16 1 Vessels (liner tubes H01J2237/0268)
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H01J2237/162 2 Open vessel, i.e. one end sealed by object or workpiece
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H01J2237/164 2 Particle-permeable windows
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H01J2237/166 2 Sealing means
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H01J2237/18 1 Vacuum control means
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H01J2237/182 2 Obtaining or maintaining desired pressure
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H01J2237/1825 3 Evacuating means
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H01J2237/184 2 Vacuum locks
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H01J2237/186 2 Valves
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H01J2237/188 2 Differential pressure
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H01J2237/20 1 Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
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H01J2237/2001 2 Maintaining constant desired temperature
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H01J2237/2002 2 Controlling environment of sample
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H01J2237/2003 3 Environmental cells
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H01J2237/2004 4 Biological samples
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H01J2237/2005 2 Seal mechanisms
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H01J2237/2006 3 Vacuum seals
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H01J2237/2007 2 Holding mechanisms
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H01J2237/2008 2 specially adapted for studying electrical or magnetical properties of objects
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H01J2237/201 2 for mounting multiple objects
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H01J2237/202 2 Movement
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H01J2237/20207 3 Tilt
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H01J2237/20214 3 Rotation
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H01J2237/20221 3 Translation
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H01J2237/20228 4 Mechanical X-Y scanning
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H01J2237/20235 4 Z movement or adjustment
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H01J2237/20242 3 Eucentric movement
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H01J2237/2025 3 Sensing velocity of translation or rotation
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H01J2237/20257 3 Magnetic coupling
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H01J2237/20264 3 Piezoelectric devices
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H01J2237/20271 3 Temperature responsive devices
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H01J2237/20278 3 Motorised movement
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H01J2237/20285 4 computer-controlled
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H01J2237/20292 3 Means for position and/or orientation registration
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H01J2237/204 2 Means for introducing and/or outputting objects (locks H01J2237/184)
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H01J2237/206 2 Modifying objects while observing
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H01J2237/2062 3 Mechanical constraints
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H01J2237/2065 3 Temperature variations (maintaining constant desired temperature H01J2237/2001)
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H01J2237/2067 3 Surface alteration
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H01J2237/208 2 Elements or methods for movement independent of sample stage for influencing or moving or contacting or transferring the sample or parts thereof, e.g. prober needles or transfer needles in FIB/SEM systems
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H01J2237/21 1 Focus adjustment (lenses H01J2237/10)
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H01J2237/213 2 during electron or ion beam welding or cutting
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H01J2237/216 2 Automatic focusing methods
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H01J2237/22 1 Treatment of data (mixing signals H01J2237/24495)
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H01J2237/221 2 Image processing
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H01J2237/223 3 Fourier techniques
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H01J2237/225 3 Displaying image using synthesised colours
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H01J2237/226 2 Image reconstruction
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H01J2237/228 3 Charged particle holography
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H01J2237/244 1 Detection characterized by the detecting means
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H01J2237/24405 2 Faraday cages
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H01J2237/2441 2 Semiconductor detectors, e.g. diodes
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H01J2237/24415 3 X-ray
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H01J2237/2442 4 Energy-dispersive (Si-Li type) spectrometer
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H01J2237/24425 4 Wavelength-dispersive spectrometer
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H01J2237/2443 2 Scintillation detectors
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H01J2237/24435 2 Microchannel plates
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H01J2237/2444 2 Electron Multiplier
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H01J2237/24445 3 using avalanche in a gas
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H01J2237/2445 2 Photon detectors for X-rays, light, e.g. photomultipliers
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H01J2237/24455 2 Transmitted particle detectors
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H01J2237/2446 2 Position sensitive detectors
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H01J2237/24465 3 Sectored detectors, e.g. quadrants
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H01J2237/2447 3 Imaging plates
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H01J2237/24475 2 Scattered electron detectors
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H01J2237/2448 2 Secondary particle detectors
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H01J2237/24485 2 Energy spectrometers
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H01J2237/2449 2 Detector devices with moving charges in electric or magnetic fields
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H01J2237/24495 2 Signal processing, e.g. mixing of two or more signals
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H01J2237/245 1 Detection characterised by the variable being measured
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H01J2237/24507 2 Intensity, dose or other characteristics of particle beams or electromagnetic radiation
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H01J2237/24514 3 Beam diagnostics including control of the parameter or property diagnosed (H01J2237/30472 takes precedence)
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H01J2237/24521 4 Beam diameter
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H01J2237/24528 4 Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece (means for deflecting or directing discharge H01J2237/15)
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H01J2237/24535 4 Beam current
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H01J2237/24542 4 Beam profile
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H01J2237/2455 3 Polarisation (electromagnetic beams)
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H01J2237/24557 3 Spin polarisation (particles)
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H01J2237/24564 2 Measurements of electric or magnetic variables, e.g. voltage, current, frequency
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H01J2237/24571 2 Measurements of non-electric or non-magnetic variables
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H01J2237/24578 3 Spatial variables, e.g. position, distance
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H01J2237/24585 3 Other variables, e.g. energy, mass, velocity, time, temperature
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H01J2237/24592 2 Inspection and quality control of devices
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H01J2237/248 1 Components associated with the control of the tube
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H01J2237/2482 2 Optical means
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H01J2237/2485 2 Electric or electronic means
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H01J2237/2487 3 using digital signal processors
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H01J2237/25 1 Tubes for localised analysis using electron or ion beams
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H01J2237/2505 2 characterised by their application
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H01J2237/2511 3 Auger spectrometers
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H01J2237/2516 3 Secondary particles mass or energy spectrometry
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H01J2237/2522 4 of electrons (ESCA, XPS)
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H01J2237/2527 4 Ions [SIMS]
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H01J2237/2533 4 Neutrals [SNMS]
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H01J2237/2538 3 Low energy electron microscopy [LEEM]
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H01J2237/2544 4 Diffraction [LEED]
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H01J2237/255 5 Reflection diffraction [RHEED]
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H01J2237/2555 3 Microprobes, i.e. particle-induced X-ray spectrometry
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H01J2237/2561 4 electron
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H01J2237/2566 4 ion
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H01J2237/2572 4 proton
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H01J2237/2577 4 atomic
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H01J2237/2583 3 using tunnel effects, e.g. STM, AFM
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H01J2237/2588 3 Lorenz microscopy (magnetic field measurement)
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H01J2237/2594 3 Measuring electric fields or potentials
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H01J2237/26 1 Electron or ion microscopes
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H01J2237/2602 2 Details
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H01J2237/2605 3 operating at elevated pressures, e.g. atmosphere
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H01J2237/2608 4 with environmental specimen chamber (environmental cells H01J2237/2003)
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H01J2237/2611 2 Stereoscopic measurements and/or imaging
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H01J2237/2614 2 Holography or phase contrast, phase related imaging in general, e.g. phase plates
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H01J2237/2617 2 Comparison or superposition of transmission images; Moiré
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H01J2237/262 2 Non-scanning techniques
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H01J2237/2623 3 Field-emission microscopes
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H01J2237/2626 4 Pulsed source
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H01J2237/28 2 Scanning microscopes
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H01J2237/2801 3 Details
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H01J2237/2802 3 Transmission microscopes
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H01J2237/2803 3 characterised by the imaging method
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H01J2237/2804 4 Scattered primary beam
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H01J2237/2805 5 Elastic scattering
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H01J2237/2806 4 Secondary charged particle
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H01J2237/2807 4 X-rays
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H01J2237/2808 4 Cathodoluminescence
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H01J2237/2809 3 characterised by the imaging problems involved
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H01J2237/281 4 Bottom of trenches or holes
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H01J2237/2811 4 Large objects
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H01J2237/2812 3 Emission microscopes
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H01J2237/2813 3 characterised by the application
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H01J2237/2814 4 Measurement of surface topography
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H01J2237/2815 5 Depth profile
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H01J2237/2816 5 Length
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H01J2237/2817 4 Pattern inspection
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H01J2237/2818 3 Scanning tunnelling microscopes
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H01J2237/282 2 Determination of microscope properties
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H01J2237/2823 3 Resolution
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H01J2237/2826 3 Calibration (for object processing apparatus H01J2237/30433)
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H01J2237/285 2 Emission microscopes
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H01J2237/2852 3 Auto-emission (i.e. field-emission)
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H01J2237/2855 3 Photo-emission
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H01J2237/2857 3 Particle bombardment induced emission
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H01J2237/30 1 Electron or ion beam tubes for processing objects
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H01J2237/303 2 Electron or ion optical systems
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H01J2237/304 2 Controlling tubes
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H01J2237/30405 3 Details
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H01J2237/30411 4 using digital signal processors [DSP]
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H01J2237/30416 4 Handling of data (for lithography H01J37/3174)
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H01J2237/30422 5 Data compression
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H01J2237/30427 4 using neural networks or fuzzy logic
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H01J2237/30433 3 System calibration (for microscopes H01J2237/2826)
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H01J2237/30438 4 Registration
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H01J2237/30444 5 Calibration grids
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H01J2237/3045 4 Deflection calibration (deflecting in general H01J2237/15; specific to material treating H01J2237/30483)
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H01J2237/30455 3 Correction during exposure
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H01J2237/30461 4 pre-calculated
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H01J2237/30466 3 Detecting endpoint of process (for plasma apparatus H01J37/32963, for sputtering apparatus H01J37/3479)
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H01J2237/30472 3 Controlling the beam
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H01J2237/30477 4 Beam diameter
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H01J2237/30483 4 Scanning
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H01J2237/30488 5 Raster scan
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H01J2237/30494 5 Vector scan
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H01J2237/31 2 Processing objects on a macro-scale
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H01J2237/3104 3 Welding
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H01J2237/3109 3 Cutting
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H01J2237/3114 3 Machining
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H01J2237/3118 3 Drilling
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H01J2237/3123 3 Casting
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H01J2237/3128 3 Melting
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H01J2237/3132 3 Evaporating
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H01J2237/3137 4 Plasma-assisted co-operation
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H01J2237/3142 3 Ion plating
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H01J2237/3146 4 Ion beam bombardment sputtering
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H01J2237/3151 3 Etching
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H01J2237/3156 3 Curing
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H01J2237/316 3 Changing physical properties
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H01J2237/3165 3 Changing chemical properties
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H01J2237/317 2 Processing objects on a microscale
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H01J2237/31701 3 Ion implantation
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H01J2237/31703 4 Dosimetry
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H01J2237/31705 4 Impurity or contaminant control
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H01J2237/31706 4 characterised by the area treated
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H01J2237/31708 5 unpatterned
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H01J2237/3171 5 patterned
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H01J2237/31711 6 using mask
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H01J2237/31713 6 Focused ion beam
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H01J2237/31732 3 Depositing thin layers on selected microareas (ion plating H01J2237/3142)
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H01J2237/31733 4 using STM
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H01J2237/31735 3 Direct-write microstructures
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H01J2237/31737 4 using ions
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H01J2237/31738 4 using STM
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H01J2237/3174 3 Etching microareas
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H01J2237/31742 4 for repairing masks
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H01J2237/31744 5 introducing gas in vicinity of workpiece
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H01J2237/31745 4 for preparing specimen to be viewed in microscopes or analyzed in microanalysers
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H01J2237/31747 4 using STM
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H01J2237/31749 3 Focused ion beam
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H01J2237/3175 3 Lithography
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H01J2237/31752 4 using particular beams or near-field effects, e.g. STM-like techniques
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H01J2237/31754 5 using electron beams
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H01J2237/31755 5 using ion beams
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H01J2237/31757 5 hybrid, i.e. charged particles and light, X-rays, plasma
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H01J2237/31759 5 using near-field effects, e.g. STM
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H01J2237/31761 4 Patterning strategy
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H01J2237/31762 5 Computer and memory organisation
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H01J2237/31764 5 Dividing into sub-patterns
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H01J2237/31766 5 Continuous moving of wafer
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H01J2237/31767 5 Step and repeat
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H01J2237/31769 4 Proximity effect correction
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H01J2237/31771 5 using multiple exposure
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H01J2237/31772 4 Flood beam
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H01J2237/31774 4 Multi-beam
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H01J2237/31776 4 Shaped beam
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H01J2237/31777 4 by projection
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H01J2237/31779 5 from patterned photocathode
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H01J2237/31781 5 from patterned cold cathode
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H01J2237/31783 6 M-I-M cathode
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H01J2237/31784 6 Semiconductor cathode
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H01J2237/31786 6 Field-emitting cathode
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H01J2237/31788 5 through mask
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H01J2237/31789 5 Reflection mask
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H01J2237/31791 5 Scattering mask
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H01J2237/31793 4 Problems associated with lithography
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H01J2237/31794 5 affecting masks
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H01J2237/31796 5 affecting resists
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H01J2237/31798 5 detecting pattern defects (with SEM H01J2237/2817; correcting H01J2237/31735, H01J2237/3174)
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H01J2237/32 1 Processing objects by plasma generation
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H01J2237/327 2 Arrangements for generating the plasma
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H01J2237/33 2 characterised by the type of processing
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H01J2237/332 3 Coating
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H01J2237/3321 4 CVD [Chemical Vapor Deposition]
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H01J2237/3322 4 Problems associated with coating
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H01J2237/3323 5 uniformity
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H01J2237/3325 5 large area
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H01J2237/3326 5 high speed
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H01J2237/3327 5 Coating high aspect ratio workpieces
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H01J2237/3328 5 adhesion, stress, lift-off of deposited films
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H01J2237/334 3 Etching
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H01J2237/3341 4 Reactive etching
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H01J2237/3342 4 Resist stripping
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H01J2237/3343 4 Problems associated with etching
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H01J2237/3344 5 isotropy
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H01J2237/3345 5 anisotropy
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H01J2237/3346 5 Selectivity
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H01J2237/3347 5 bottom of holes or trenches
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H01J2237/3348 5 control of ion bombardment energy
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H01J2237/335 3 Cleaning
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H01J2237/3355 4 Holes or apertures, i.e. inprinted circuit boards
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H01J2237/336 3 Changing physical properties of treated surfaces
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H01J2237/3365 4 Plasma source implantation
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H01J2237/338 3 Changing chemical properties of treated surfaces
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H01J2237/3382 4 Polymerising
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H01J2237/3385 4 Carburising
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H01J2237/3387 4 Nitriding
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H01J2237/339 3 Synthesising components
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H01J2261/00 0 Gas- or vapour-discharge lamps
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H01J2261/02 1 Details
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H01J2261/38 2 Devices for influencing the colour or wavelength of the light
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H01J2261/385 3 Non-chemical aspects of luminescent layers, e.g. thickness profile, shape and distribution of luminescent coatings
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H01J2329/00 0 Electron emission display panels, e.g. field emission display panels
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H01J2329/002 1 Cooling means
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H01J2329/005 1 Multi-directional displaying, i.e. with multiple display faces facing in different directions
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H01J2329/007 1 Vacuumless display panels, i.e. with phosphor directly applied to emitter without intermediate vacuum space
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H01J2329/02 1 Electrodes other than control electrodes
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H01J2329/04 2 Cathode electrodes
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H01J2329/0402 3 Thermionic cathodes
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H01J2329/0405 3 Cold cathodes other than those covered by H01J2329/0407 - H01J2329/0492
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H01J2329/0407 3 Field emission cathodes
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H01J2329/041 4 characterised by the emitter shape
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H01J2329/0413 5 Microengineered point emitters
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H01J2329/0415 6 conical shaped, e.g. Spindt type
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H01J2329/0418 6 needle shaped
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H01J2329/0421 5 Pillar shaped emitters
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H01J2329/0423 5 Microengineered edge emitters
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H01J2329/0426 5 Coatings on the emitter surface, e.g. with low work function materials
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H01J2329/0428 5 Fibres
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H01J2329/0431 5 Nanotubes
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H01J2329/0434 5 Particles
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H01J2329/0436 5 Whiskers
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H01J2329/0439 4 characterised by the emitter material
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H01J2329/0442 5 Metals or metal alloys
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H01J2329/0444 5 Carbon types
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H01J2329/0447 6 Diamond
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H01J2329/0449 6 Graphite
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H01J2329/0452 6 Fullerenes
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H01J2329/0455 6 Carbon nanotubes (CNTs)
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H01J2329/0457 6 Amorphous carbon
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H01J2329/046 6 Diamond-like carbon [DLC]
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H01J2329/0463 5 Semiconductor materials
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H01J2329/0465 5 Carbides
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H01J2329/0468 5 Nitrides
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H01J2329/0471 5 Borides
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H01J2329/0473 5 Oxides
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H01J2329/0476 3 Ferroelectric cathodes
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H01J2329/0478 3 Semiconductor cathodes, e.g. having PN junction layers
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H01J2329/0481 3 Cold cathodes having an electric field perpendicular to the surface thereof (H01J2329/0407 - H01J2329/0478 take precedence)
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H01J2329/0484 4 Metal-Insulator-Metal [MIM] emission type cathodes
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H01J2329/0486 3 Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
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H01J2329/0489 4 Surface conduction emission type cathodes
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H01J2329/0492 3 Cold cathodes combined with other synergetic effects, e.g. secondary, photo- or thermal emission
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H01J2329/0494 3 Circuit elements associated with the emitters by direct integration
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H01J2329/0497 4 Resistive members, e.g. resistive layers
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H01J2329/08 2 Anode electrodes
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H01J2329/18 1 Luminescent screens
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H01J2329/20 2 characterised by the luminescent material
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H01J2329/22 2 characterised by the binder or adhesive for securing the luminescent material to its support, e.g. substrate
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H01J2329/28 2 with protective, conductive or reflective layers
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H01J2329/30 2 Shape or geometrical arrangement of the luminescent material
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H01J2329/32 2 Means associated with discontinuous arrangements of the luminescent material
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H01J2329/323 3 Black matrix
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H01J2329/46 1 Arrangements of electrodes and associated parts for generating or controlling the electron beams
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H01J2329/4669 2 Insulation layers
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H01J2329/8665 3 Spacer holding means
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H01J2329/8675 3 Seals between the frame and the front and/or back plate
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H01J2329/868 2 Passive shielding means of vessels
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H01J2329/8685 3 Antistatic shielding
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H01J2329/869 3 Electromagnetic shielding
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H01J2329/8695 3 Mechanical shielding, e.g. against water or abrasion
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H01J2329/88 2 Coatings on walls of the vessels (H01J2329/18, H01J2329/868, H01J2329/89 take precedence)
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H01J2329/89 2 Optical components structurally combined with the vessel
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H01J2329/892 3 Anti-reflection, anti-glare, viewing angle and contrast improving means
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H01J2329/90 1 Leading-in arrangements; seals therefor
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H01J2329/92 1 Means forming part of the display panel for the purpose of providing electrical connection to it
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H01J2329/943 2 Means for maintaining vacuum within the vessel
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H01J2329/96 1 Circuit elements structurally associated with the display panels (H01J2329/0494 takes precedence)
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H01J2893/00 0 Discharge tubes and lamps
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H01J2893/0001 1 Electrodes and electrode systems suitable for discharge tubes or lamps
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H01J2893/0002 2 Construction arrangements of electrode systems
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H01J2893/0003 3 Anodes forming part of vessel walls
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H01J2893/0005 3 Fixing of electrodes
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H01J2893/0006 4 Mounting
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H01J2893/0007 5 Machines for assembly
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H01J2893/0008 4 Supply leads; Electrode supports via rigid connection to vessel
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H01J2893/0009 4 Electrode system pressing against vessel wall
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H01J2893/001 2 Non-constructive schematic arrangements
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H01J2893/0011 2 Non-emitting electrodes
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H01J2893/0012 2 Constructional arrangements
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H01J2893/0013 3 Sealed electrodes
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H01J2893/0015 3 Non-sealed electrodes
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H01J2893/0016 4 Planar grids
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H01J2893/0017 4 Cylindrical, helical or annular grids
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H01J2893/0018 4 Bar or cage-like grids
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H01J2893/0019 3 Chemical composition and manufacture
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H01J2893/002 4 chemical
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H01J2893/0021 5 carbon
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H01J2893/0022 4 Manufacture
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H01J2893/0023 5 carbonising and other surface treatments
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H01J2893/0024 5 Planar grids
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H01J2893/0025 5 by winding wire upon a support
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H01J2893/0026 3 Machines for manufacture of grids or anodes
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H01J2893/0027 3 Mitigation of temperature effects
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H01J2893/0029 1 Electron beam tubes
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H01J2893/003 1 Tubes with plural electrode systems
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H01J2893/0031 1 Tubes with material luminescing under electron bombardment
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H01J2893/0032 1 Tubes with variable amplification factor
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H01J2893/0033 1 Vacuum connection techniques applicable to discharge tubes and lamps
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H01J2893/0034 2 Lamp bases
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H01J2893/0035 3 shaped as flat plates, in particular metallic
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H01J2893/0036 3 having wires, ribbons or tubes placed between two vessel walls and being perpendicular to at least one of said walls
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H01J2893/0037 2 Solid sealing members other than lamp bases
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H01J2893/0038 3 Direct connection between two insulating elements, in particular via glass material
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H01J2893/0039 4 Glass-to-glass connection, e.g. by soldering
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H01J2893/004 4 Quartz-to-quartz connection
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H01J2893/0041 3 Direct connection between insulating and metal elements, in particular via glass material
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H01J2893/0043 4 Glass-to-metal or quartz-to-metal, e.g. by soldering
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H01J2893/0044 3 Direct connection between two metal elements, in particular via material a connecting material
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H01J2893/0045 2 Non-solid connections, e.g. liquid or rubber
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H01J2893/0046 2 Lamp base with closure
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H01J2893/0047 2 Closure other than lamp base
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H01J2893/0048 1 Tubes with a main cathode
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H01J2893/0049 2 Internal parts
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H01J2893/005 2 Cathodes
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H01J2893/0051 2 Anode assemblies; screens for influencing the discharge
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H01J2893/0052 3 Anode supporting means
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H01J2893/0053 3 Leading in for anodes; Protecting means for anode supports
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H01J2893/0054 3 Cooling means
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H01J2893/0055 2 Movable screens
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H01J2893/0056 2 Parts inside tubes brought to incandescence by the discharge
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H01J2893/0058 2 Grids; Auxiliary internal or external electrodes
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H01J2893/0059 1 Arc discharge tubes
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H01J2893/006 1 Tubes with electron bombarded gas (e.g. with plasma filter)
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H01J2893/0061 1 Tubes with discharge used as electron source
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H01J2893/0062 1 Tubes with temperature ionized gas as electron source
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H01J2893/0063 1 Plasma light sources
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H01J2893/0064 1 Tubes with cold main electrodes (including cold cathodes)
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H01J2893/0065 2 Electrode systems
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H01J2893/0066 3 Construction, material, support, protection and temperature regulation of electrodes; Electrode cups
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H01J2893/0067 3 Electrode assembly without control electrodes, e.g. including a screen
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H01J2893/0068 3 electrode assembly with control electrodes, e.g. including a screen
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H01J2893/0069 1 Tubes for displaying characters
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H01J2893/007 1 Sequential discharge tubes
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H01J2893/0072 1 Disassembly or repair of discharge tubes
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H01J2893/0073 2 Discharge tubes with liquid poolcathodes; constructional details
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H01J2893/0074 3 Cathodic cups; Screens; Reflectors; Filters; Windows; Protection against mercury deposition; Returning condensed electrode material to the cathodic cup; Liquid electrode level control
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H01J2893/0075 4 Cathodic cups
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H01J2893/0076 5 Liquid electrode materials
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H01J2893/0077 5 Cathodic cup construction; Cathodic spot control
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H01J2893/0078 5 Mounting cathodic cups in the discharge tube
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H01J2893/0079 5 Means for limiting the cathodic spot movement
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H01J2893/008 5 Means for stabilising the cathodic spot
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H01J2893/0081 5 Cooling means
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H01J2893/0082 4 Returning condensed electrode material to the cathodic cup, e.g. including cleaning
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H01J2893/0083 4 Liquid electrode level control
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H01J2893/0084 4 Protection against mercury deposition
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H01J2893/0086 4 Gas fill; Maintaining or maintaining desired pressure; Producing, introducing or replenishing gas or vapour during operation of the tube; Getters; Gas cleaning; Electrode cleaning
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H01J2893/0087 4 Igniting means; Cathode spot maintaining or extinguishing means
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H01J2893/0088 2 Tubes with at least a solid principal cathode and solid anodes
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H01J2893/0089 3 Electrode systems
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H01J2893/009 3 Anode systems; Screens
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H01J2893/0091 4 Anode supporting means
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H01J2893/0094 3 Electrode arrangements; Auxiliary electrodes
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H01J2893/0095 2 Tubes with exclusively liquid main electrodes
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H01J2893/0096 1 Transport of discharge tube components during manufacture, e.g. wires, coils, lamps, contacts, etc.
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H01J2893/0097 2 Incandescent wires of coils
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H01J2893/0098 2 Vessels
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H01K ELECTRIC INCANDESCENT LAMPS (details, apparatus or processes for manufacture applicable to both discharge devices and incandescent lamps H01J; light sources using a combination of incandescent and other types of light generation H01J61/96, H05B35/00)
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H01K1/00 0 Details
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H01K1/02 1 Incandescent bodies
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H01K1/04 2 characterised by the material thereof
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H01K1/06 3 Carbon bodies
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H01K1/08 3 Metallic bodies
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H01K1/10 3 Bodies of metal or carbon combined with other substance
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H01K1/12 3 Bodies which are non-conductive when cold, e.g. for Nernst lamp
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H01K1/14 2 characterised by the shape
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H01K1/16 2 Electric connection thereto
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H01K1/18 1 Mountings or supports for the incandescent body
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H01K1/20 2 characterised by the material thereof
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H01K1/22 2 Lamp stems (seals for leading conductors there through H01K1/38)
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H01K1/24 2 Mounts for lamps with connections at opposite ends, e.g. for tubular lamp
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H01K1/26 1 Screens; Filters (associated with envelope H01K1/28)
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H01K1/28 1 Envelopes; Vessels
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H01K1/30 2 incorporating lenses
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H01K1/32 2 provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
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H01K1/325 3 {Reflecting coating}
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H01K1/34 2 Double wall vessels
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H01K1/36 1 Seals between parts of vessel, e.g. between stem and envelope
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H01K1/38 1 Seals for leading-in conductors
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H01K1/40 1 Leading-in conductors
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H01K1/42 1 Means forming part of the lamp for the purpose of providing electrical connection, or support for, the lamp
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H01K1/44 2 directly applied to, or forming part of, the vessel
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H01K1/46 2 supported by a separate part, e.g. base, cap
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H01K1/465 3 {with means to prevent loosening or unauthorised removal of the lamp}
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H01K1/48 3 Removable caps
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H01K1/50 1 Selection of substances for gas fillings; Specified pressure thereof
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H01K1/52 1 Means for obtaining or maintaining the desired pressure within the vessel
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H01K1/54 2 Means for absorbing or absorbing gas, or for preventing or removing efflorescence, e.g. by gettering
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H01K1/56 3 characterised by the material of the getter
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H01K1/58 1 Cooling arrangements
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H01K1/60 1 Means structurally associated with the lamp for indicating defects or previous use
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H01K1/62 1 One or more circuit elements structurally associated with the lamp
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H01K1/625 2 {Flashing incandescent lamps}
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H01K1/64 2 with built-in switch
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H01K1/66 2 with built-in fuse
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H01K1/68 2 with built-in spark gap
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H01K1/70 2 with built-in short-circuiting device, e.g. for serially connected lamps
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H01K3/00 0 Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof (manufacture of vessels from glass C03B)
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H01K3/005 1 {Methods for coating the surface of the envelope}
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H01K3/02 1 Manufacture of incandescent bodies
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H01K3/04 2 Machines therefor
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H01K3/06 1 Attaching of incandescent bodies to mount
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H01K3/065 2 {Machines therefor}
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H01K3/08 1 Manufacture of mounts or stems
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H01K3/10 2 Machines therefor
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H01K3/12 1 Joining of mount or stem to vessel; Joining parts of the vessel, e.g. by butt sealing
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H01K3/14 2 Machines therefor
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H01K3/16 1 Joining of caps to vessel
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H01K3/18 2 Machines therefor
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H01K3/20 1 Sealing-in wires directly into the envelope
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H01K3/22 1 Exhausting, degassing, filling, or cleaning vessels
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H01K3/24 2 Machines therefor
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H01K3/26 1 Closing of vessels
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H01K3/28 1 Machines having sequentially arranged operating stations
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H01K3/30 1 Repairing or regenerating used or defective lamps
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H01K3/305 2 {Testing of incandescent lamps}
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H01K3/32 1 Auxiliary devices for cleaning, placing, or removing incandescent lamps
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H01K5/00 0 Lamps for general lighting (H01K9/00 - H01K13/00 take precedence)
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H01K5/02 1 with connections made at opposite ends, e.g. tubular lamp with axially arranged filament
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H01K7/00 0 Lamps for purposes other than general lighting (H01K9/00 - H01K13/00 take precedence)
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H01K7/02 1 for producing a narrow beam of light; for approximating a point-like source of light, e.g. for searchlight, for cinematographic projector (producing narrow beams by optical means external to lamp F21V)
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H01K7/04 1 for indicating
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H01K7/06 1 for decorative purposes
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H01K9/00 0 Lamps having two or more incandescent bodies separately heated (H01K11/00, H01K13/00 take precedence)
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H01K9/02 1 to provide substitution in the event of failure of one of the bodies
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H01K9/04 2 with built-in manually operated switch
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H01K9/06 2 with built-in device, e.g. switch, for automatically completing circuit of reserve body
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H01K9/08 1 to provide selectively different light effects, e.g. for automobile headlamp
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H01K11/00 0 Lamps having an incandescent body which is not conductively heated, e.g. heated inductively, heated by electronic discharge (H01K13/00 takes precedence)
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H01K13/00 0 Lamps having an incandescent body which is substantially non-conductive until heated, e.g. Nernst lamp
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H01K13/02 1 Heating arrangements
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H01K13/04 2 using electric discharge
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H01K13/06 2 using induction heating; using high frequency field
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H01L SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10 (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors or transformers H01F; capacitors in general H01G; electrolytic devices H01G9/00; batteries or accumulators H01M; waveguides, resonators or lines of the waveguide type H01P; line connectors or current collectors H01R; stimulated-emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application)
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H01L21/00 0 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02 1 Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/02002 2 {Preparing wafers}
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H01L21/02005 3 {Preparing bulk and homogeneous wafers}
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H01L21/02008 4 {Multistep processes}
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H01L21/0201 5 {Specific process step}
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H01L21/02013 6 {Grinding, lapping}
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H01L21/02016 6 {Backside treatment}
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H01L21/02019 6 {Chemical etching}
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H01L21/02021 6 {Edge treatment, chamfering}
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H01L21/02024 6 {Mirror polishing}
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H01L21/02027 4 {Setting crystal orientation}
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H01L21/0203 4 {Making porous regions on the surface}
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H01L21/02032 4 {by reclaiming or re-processing}
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H01L21/02035 4 {Shaping}
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H01L21/02041 2 {Cleaning}
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H01L21/02043 3 {Cleaning before device manufacture, i.e. Begin-Of-Line process}
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H01L21/02046 4 {Dry cleaning only (H01L21/02085 takes precedence)}
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H01L21/02049 5 {with gaseous HF}
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H01L21/02052 4 {Wet cleaning only (H01L21/02085 takes precedence)}
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H01L21/02054 4 {combining dry and wet cleaning steps (H01L21/02085 takes precedence)}
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H01L21/02057 3 {Cleaning during device manufacture}
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H01L21/0206 4 {during, before or after processing of insulating layers}
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H01L21/02063 5 {the processing being the formation of vias or contact holes}
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H01L21/02065 5 {the processing being a planarization of insulating layers}
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H01L21/02068 4 {during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers}
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H01L21/02071 5 {the processing being a delineation, e.g. RIE, of conductive layers}
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H01L21/02074 5 {the processing being a planarization of conductive layers}
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H01L21/02076 3 {Cleaning after the substrates have been singulated}
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H01L21/02079 3 {Cleaning for reclaiming}
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H01L21/02082 3 {product to be cleaned}
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H01L21/02085 4 {Cleaning of diamond}
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H01L21/02087 4 {Cleaning of wafer edges}
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H01L21/0209 4 {Cleaning of wafer backside}
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H01L21/02093 4 {Cleaning of porous materials}
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H01L21/02096 3 {only mechanical cleaning}
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H01L21/02098 3 {only involving lasers, e.g. laser ablation}
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H01L21/02101 3 {only involving supercritical fluids}
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H01L21/02104 2 {Forming layers (deposition in general C23C; crystal growth in general C30B)}
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H01L21/02107 3 {Forming insulating materials on a substrate}
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H01L21/02109 4 {characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates}
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H01L21/02112 5 {characterised by the material of the layer}
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H01L21/02115 6 {the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon}
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H01L21/02118 6 {carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC (polymers per se C08G, photoresist per se G03F)}
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H01L21/0212 7 {the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene}
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H01L21/02123 6 {the material containing silicon}
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H01L21/02126 7 {the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
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H01L21/02129 8 {the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}
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H01L21/02131 8 {the material being halogen doped silicon oxides, e.g. FSG}
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H01L21/02134 8 {the material comprising hydrogen silsesquioxane, e.g. HSQ}
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H01L21/02137 8 {the material comprising alkyl silsesquioxane, e.g. MSQ}
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H01L21/0214 8 {the material being a silicon oxynitride, e.g. SiON or SiON:H}
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H01L21/02142 7 {the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides}
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H01L21/02145 8 {the material containing aluminium, e.g. AlSiOx}
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H01L21/02148 8 {the material containing hafnium, e.g. HfSiOx or HfSiON}
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H01L21/0215 8 {the material containing tantalum, e.g. TaSiOx}
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H01L21/02153 8 {the material containing titanium, e.g. TiSiOx}
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H01L21/02156 8 {the material containing at least one rare earth element, e.g. silicate of lanthanides, scandium or yttrium}
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H01L21/02159 8 {the material containing zirconium, e.g. ZrSiOx}
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H01L21/02161 8 {the material containing more than one metal element}
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H01L21/02164 7 {the material being a silicon oxide, e.g. SiO2}
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H01L21/02167 7 {the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides (H01L21/02126 and H01L21/0214 take precedence)}
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H01L21/0217 7 {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (H01L21/02126 and H01L21/0214 take precedence)}
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H01L21/02172 6 {the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides (materials containing silicon H01L21/02123; metal silicates H01L21/02142)}
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H01L21/02175 7 {characterised by the metal (H01L21/02197 takes precedence)}
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H01L21/02178 8 {the material containing aluminium, e.g. Al2O3}
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H01L21/02181 8 {the material containing hafnium, e.g. HfO2}
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H01L21/02183 8 {the material containing tantalum, e.g. Ta2O5}
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H01L21/02186 8 {the material containing titanium, e.g. TiO2}
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H01L21/02189 8 {the material containing zirconium, e.g. ZrO2}
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H01L21/02192 8 {the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}
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H01L21/02194 8 {the material containing more than one metal element}
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H01L21/02197 7 {the material having a perovskite structure, e.g. BaTiO3}
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H01L21/022 5 {the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H01L21/02304, H01L21/02362)}
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H01L21/02203 5 {the layer being porous}
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H01L21/02205 5 {the layer being characterised by the precursor material for deposition}
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H01L21/02208 6 {the precursor containing a compound comprising Si}
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H01L21/02211 7 {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
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H01L21/02214 7 {the compound comprising silicon and oxygen}
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H01L21/02216 8 {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}
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H01L21/02219 7 {the compound comprising silicon and nitrogen}
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H01L21/02222 8 {the compound being a silazane}
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H01L21/02225 4 {characterised by the process for the formation of the insulating layer}
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H01L21/02227 5 {formation by a process other than a deposition process}
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H01L21/0223 6 {formation by oxidation, e.g. oxidation of the substrate}
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H01L21/02233 7 {of the semiconductor substrate or a semiconductor layer}
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H01L21/02236 8 {group IV semiconductor}
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H01L21/02238 9 {silicon in uncombined form, i.e. pure silicon}
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H01L21/02241 8 {III-V semiconductor}
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H01L21/02244 7 {of a metallic layer}
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H01L21/02247 6 {formation by nitridation, e.g. nitridation of the substrate}
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H01L21/02249 6 {formation by combined oxidation and nitridation performed simultaneously}
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H01L21/02252 6 {formation by plasma treatment, e.g. plasma oxidation of the substrate (after treatment of an insulating film by plasma H01L21/3105 and subgroups)}
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H01L21/02255 6 {formation by thermal treatment (H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups)}
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H01L21/02258 6 {formation by anodic treatment, e.g. anodic oxidation}
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H01L21/0226 5 {formation by a deposition process (per se C23C)}
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H01L21/02263 6 {deposition from the gas or vapour phase}
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H01L21/02266 7 {deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition}
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H01L21/02269 7 {deposition by thermal evaporation (H01L21/02293 takes precedence)}
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H01L21/02271 7 {deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (H01L21/02266 takes precedence)}
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H01L21/02274 8 {in the presence of a plasma [PECVD]}
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H01L21/02277 8 {the reactions being activated by other means than plasma or thermal, e.g. photo-CVD}
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H01L21/0228 8 {deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD}
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H01L21/02282 6 {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
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H01L21/02285 7 {Langmuir-Blodgett techniques}
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H01L21/02288 7 {printing, e.g. ink-jet printing (per se B41J)}
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H01L21/0229 7 {liquid atomic layer deposition}
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H01L21/02293 6 {formation of epitaxial layers by a deposition process (epitaxial growth per se C30B)}
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H01L21/02296 4 {characterised by the treatment performed before or after the formation of the layer (H01L21/02227 and subgroups take precedence)}
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H01L21/02299 5 {pre-treatment}
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H01L21/02301 6 {in-situ cleaning}
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H01L21/02304 6 {formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers}
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H01L21/02307 6 {treatment by exposure to a liquid}
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H01L21/0231 6 {treatment by exposure to electromagnetic radiation, e.g. UV light}
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H01L21/02312 6 {treatment by exposure to a gas or vapour}
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H01L21/02315 7 {treatment by exposure to a plasma}
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H01L21/02318 5 {post-treatment}
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H01L21/02321 6 {introduction of substances into an already existing insulating layer (H01L21/02227 and subgroups take precedence)}
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H01L21/02323 7 {introduction of oxygen}
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H01L21/02326 8 {into a nitride layer, e.g. changing SiN to SiON}
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H01L21/02329 7 {introduction of nitrogen}
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H01L21/02332 8 {into an oxide layer, e.g. changing SiO to SiON}
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H01L21/02334 6 {in-situ cleaning after layer formation, e.g. removing process residues}
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H01L21/02337 6 {treatment by exposure to a gas or vapour}
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H01L21/0234 7 {treatment by exposure to a plasma}
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H01L21/02343 6 {treatment by exposure to a liquid}
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H01L21/02345 6 {treatment by exposure to radiation, e.g. visible light}
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H01L21/02348 7 {treatment by exposure to UV light}
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H01L21/02351 7 {treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}
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H01L21/02354 7 {using a coherent radiation, e.g. a laser}
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H01L21/02356 6 {treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer}
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H01L21/02359 6 {treatment to change the surface groups of the insulating layer}
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H01L21/02362 6 {formation of intermediate layers, e.g. capping layers or diffusion barriers}
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H01L21/02365 3 {Forming inorganic semiconducting materials on a substrate (for light-sensitive devices H01L31/00)}
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H01L21/02367 4 {Substrates}
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H01L21/0237 5 {Materials}
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H01L21/02373 6 {Group 14 semiconducting materials}
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H01L21/02376 7 {Carbon, e.g. diamond-like carbon}
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H01L21/02378 7 {Silicon carbide}
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H01L21/02381 7 {Silicon, silicon germanium, germanium}
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H01L21/02384 7 {including tin}
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H01L21/02387 6 {Group 13/15 materials}
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H01L21/02389 7 {Nitrides}
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H01L21/02392 7 {Phosphides}
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H01L21/02395 7 {Arsenides}
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H01L21/02398 7 {Antimonides}
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H01L21/024 6 {Group 12/16 materials}
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H01L21/02403 7 {Oxides}
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H01L21/02406 7 {Sulfides}
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H01L21/02409 7 {Selenides}
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H01L21/02411 7 {Tellurides}
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H01L21/02414 6 {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
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H01L21/02417 6 {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
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H01L21/0242 6 {Crystalline insulating materials}
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H01L21/02422 6 {Non-crystalline insulating materials, e.g. glass, polymers}
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H01L21/02425 6 {Conductive materials, e.g. metallic silicides}
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H01L21/02428 5 {Structure}
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H01L21/0243 6 {Surface structure}
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H01L21/02433 5 {Crystal orientation}
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H01L21/02436 4 {Intermediate layers between substrates and deposited layers}
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H01L21/02439 5 {Materials}
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H01L21/02441 6 {Group 14 semiconducting materials}
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H01L21/02444 7 {Carbon, e.g. diamond-like carbon}
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H01L21/02447 7 {Silicon carbide}
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H01L21/0245 7 {Silicon, silicon germanium, germanium}
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H01L21/02452 7 {including tin}
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H01L21/02455 6 {Group 13/15 materials}
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H01L21/02458 7 {Nitrides}
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H01L21/02461 7 {Phosphides}
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H01L21/02463 7 {Arsenides}
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H01L21/02466 7 {Antimonides}
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H01L21/02469 6 {Group 12/16 materials}
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H01L21/02472 7 {Oxides}
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H01L21/02474 7 {Sulfides}
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H01L21/02477 7 {Selenides}
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H01L21/0248 7 {Tellurides}
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H01L21/02483 6 {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
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H01L21/02485 6 {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
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H01L21/02488 6 {Insulating materials}
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H01L21/02491 6 {Conductive materials}
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H01L21/02494 5 {Structure}
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H01L21/02496 6 {Layer structure}
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H01L21/02499 7 {Monolayers}
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H01L21/02502 7 {consisting of two layers}
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H01L21/02505 7 {consisting of more than two layers}
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H01L21/02507 8 {Alternating layers, e.g. superlattice}
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H01L21/0251 7 {Graded layers}
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H01L21/02513 6 {Microstructure}
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H01L21/02516 5 {Crystal orientation}
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H01L21/02518 4 {Deposited layers}
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H01L21/02521 5 {Materials}
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H01L21/02524 6 {Group 14 semiconducting materials}
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H01L21/02527 7 {Carbon, e.g. diamond-like carbon}
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H01L21/02529 7 {Silicon carbide}
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H01L21/02532 7 {Silicon, silicon germanium, germanium}
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H01L21/02535 7 {including tin}
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H01L21/02538 6 {Group 13/15 materials}
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H01L21/0254 7 {Nitrides}
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H01L21/02543 7 {Phosphides}
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H01L21/02546 7 {Arsenides}
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H01L21/02549 7 {Antimonides}
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H01L21/02551 6 {Group 12/16 materials}
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H01L21/02554 7 {Oxides}
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H01L21/02557 7 {Sulfides}
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H01L21/0256 7 {Selenides}
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H01L21/02562 7 {Tellurides}
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H01L21/02565 6 {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
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H01L21/02568 6 {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
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H01L21/0257 5 {Doping during depositing}
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H01L21/02573 6 {Conductivity type}
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H01L21/02576 7 {N-type}
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H01L21/02579 7 {P-type}
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H01L21/02581 7 {Transition metal or rare earth elements}
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H01L21/02584 6 {Delta-doping}
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H01L21/02587 5 {Structure}
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H01L21/0259 6 {Microstructure}
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H01L21/02592 7 {amorphous}
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H01L21/02595 7 {polycrystalline}
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H01L21/02598 7 {monocrystalline}
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H01L21/02601 7 {Nanoparticles (fullerenes H10K85/211)}
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H01L21/02603 7 {Nanowires}
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H01L21/02606 7 {Nanotubes (carbon nanotubes H10K85/211)}
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H01L21/02609 5 {Crystal orientation}
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H01L21/02612 4 {Formation types}
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H01L21/02614 5 {Transformation of metal, e.g. oxidation, nitridation}
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H01L21/02617 5 {Deposition types}
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H01L21/0262 6 {Reduction or decomposition of gaseous compounds, e.g. CVD}
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H01L21/02623 6 {Liquid deposition}
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H01L21/02625 7 {using melted materials}
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H01L21/02628 7 {using solutions}
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H01L21/02631 6 {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
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H01L21/02634 6 {Homoepitaxy}
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H01L21/02636 6 {Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials}
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H01L21/02639 7 {Preparation of substrate for selective deposition}
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H01L21/02642 8 {Mask materials other than SiO2 or SiN}
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H01L21/02645 8 {Seed materials}
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H01L21/02647 7 {Lateral overgrowth}
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H01L21/0265 8 {Pendeoepitaxy}
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H01L21/02653 7 {Vapour-liquid-solid growth}
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H01L21/02656 4 {Special treatments}
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H01L21/02658 5 {Pretreatments (cleaning in general H01L21/02041)}
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H01L21/02661 6 {In-situ cleaning}
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H01L21/02664 5 {Aftertreatments (planarisation in general H01L21/304)}
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H01L21/02667 6 {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
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H01L21/02669 7 {using crystallisation inhibiting elements}
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H01L21/02672 7 {using crystallisation enhancing elements}
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H01L21/02675 7 {using laser beams}
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H01L21/02678 8 {Beam shaping, e.g. using a mask}
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H01L21/0268 9 {Shape of mask}
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H01L21/02683 8 {Continuous wave laser beam}
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H01L21/02686 8 {Pulsed laser beam}
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H01L21/02689 7 {using particle beams}
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H01L21/02691 7 {Scanning of a beam}
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H01L21/02694 6 {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}
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H01L21/02697 3 {Forming conducting materials on a substrate}
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H01L21/027 2 Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 {(photographic masks or originals per se G03F1/00; registration or positioning of photographic masks or originals G03F9/00; photographic cameras G03B; control of position G05D3/00)}
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H01L21/0271 3 {comprising organic layers}
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H01L21/0272 4 {for lift-off processes}
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H01L21/0273 4 {characterised by the treatment of photoresist layers}
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H01L21/0274 5 {Photolithographic processes}
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H01L21/0275 6 {using lasers}
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H01L21/0276 6 {using an anti-reflective coating (anti-reflective coating for lithography in general G03F7/09)}
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H01L21/0277 5 {Electrolithographic processes}
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H01L21/0278 5 {Röntgenlithographic or X-ray lithographic processes}
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H01L21/0279 5 {Ionlithographic processes}
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H01L21/033 3 comprising inorganic layers
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H01L21/0331 4 {for lift-off processes}
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H01L21/0332 4 {characterised by their composition, e.g. multilayer masks, materials}
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H01L21/0334 4 {characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane}
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H01L21/0335 5 {characterised by their behaviour during the process, e.g. soluble masks, redeposited masks}
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H01L21/0337 5 {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}
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H01L21/0338 5 {Process specially adapted to improve the resolution of the mask}
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H01L21/04 2 the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer {(multistep manufacturing processes for semiconductor bodies of said devices H01L29/02; multistep manufacturing processes for electrodes of said devices H01L29/401; multistep manufacturing processes for said devices H01L29/66007)}
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H01L21/0405 3 {the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon (multistep processes for the manufacture of said devices H01L29/66015)}
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H01L21/041 4 {Making n- or p-doped regions}
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H01L21/0415 5 {using ion implantation}
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H01L21/042 4 {Changing their shape, e.g. forming recesses (etching of the semiconductor body H01L21/302)}
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H01L21/0425 4 {Making electrodes}
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H01L21/043 5 {Ohmic electrodes}
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H01L21/0435 5 {Schottky electrodes}
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H01L21/044 5 {Conductor-insulator-semiconductor electrodes}
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H01L21/0445 3 {the devices having semiconductor bodies comprising crystalline silicon carbide (multistep processes for the manufacture of said devices H01L29/66053)}
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H01L21/045 4 {passivating silicon carbide surfaces}
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H01L21/0455 4 {Making n or p doped regions or layers, e.g. using diffusion}
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H01L21/046 5 {using ion implantation}
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H01L21/0465 6 {using masks}
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H01L21/047 6 {characterised by the angle between the ion beam and the crystal planes or the main crystal surface}
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H01L21/0475 4 {Changing the shape of the semiconductor body, e.g. forming recesses, (etching of the semiconductor body H01L21/302)}
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H01L21/048 4 {Making electrodes}
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H01L21/0485 5 {Ohmic electrodes}
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H01L21/049 5 {Conductor-insulator-semiconductor electrodes, e.g. MIS contacts}
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H01L21/0495 5 {Schottky electrodes}
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H01L21/06 3 the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
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H01L21/08 4 Preparation of the foundation plate
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H01L21/10 4 Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
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H01L21/101 5 {Application of the selenium or tellurium to the foundation plate}
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H01L21/103 5 Conversion of the selenium or tellurium to the conductive state
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H01L21/105 5 Treatment of the surface of the selenium or tellurium layer after having been made conductive
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H01L21/108 5 Provision of discrete insulating layers, i.e. non-genetic barrier layers
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H01L21/12 4 Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
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H01L21/14 4 Treatment of the complete device, e.g. by electroforming to form a barrier
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H01L21/145 5 Ageing
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H01L21/16 3 the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
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H01L21/161 4 {Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment}
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H01L21/162 5 {Preliminary treatment of the foundation plate}
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H01L21/164 5 {Oxidation and subsequent heat treatment of the foundation plate (H01L21/165 takes precedence)}
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H01L21/165 5 {Reduction of the copper oxide, treatment of the oxide layer}
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H01L21/167 5 {Application of a non-genetic conductive layer}
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H01L21/168 4 {Treatment of the complete device, e.g. electroforming, ageing}
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H01L21/18 3 the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials {(H01L21/041 - H01L21/0425, H01L21/045 - H01L21/048 take precedence)}
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H01L21/182 4 {Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD}
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H01L21/185 4 {Joining of semiconductor bodies for junction formation}
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H01L21/187 5 {by direct bonding}
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H01L21/20 4 Deposition of semiconductor materials on a substrate, e.g. epitaxial growth {solid phase epitaxy}
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H01L21/2003 5 {characterised by the substrate}
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H01L21/2007 6 {Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer (H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187)}
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H01L21/2011 6 {the substrate being of crystalline insulating material, e.g. sapphire}
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H01L21/2015 6 {the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy}
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H01L21/2018 5 {Selective epilaxial growth, e.g. simultaneous deposition of mono - and non-mono semiconductor materials}
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H01L21/2022 5 {Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials}
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H01L21/2026 6 {using a coherent energy beam, e.g. laser or electron beam}
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H01L21/203 5 using physical deposition, e.g. vacuum deposition, sputtering
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H01L21/2033 6 {Epitaxial deposition of elements of Group IV of the Periodic System, e.g. Si, Ge}
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H01L21/2036 6 {Epitaxial deposition of AIII BV compounds}
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H01L21/205 5 using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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H01L21/2053 6 {Expitaxial deposition of elements of Group IV of the Periodic System, e.g. Si, Ge}
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H01L21/2056 6 {Epitaxial deposition of AIIIBV compounds}
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H01L21/208 5 using liquid deposition
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H01L21/2085 6 {Epitaxial deposition of AIIIBV compounds}
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H01L21/22 4 Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; {Interactions between two or more impurities; Redistribution of impurities}
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H01L21/2205 5 {from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping}
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H01L21/221 5 {of killers}
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H01L21/2215 6 {in AIIIBV compounds}
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H01L21/222 5 {Lithium-drift}
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H01L21/2225 5 {Diffusion sources}
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H01L21/223 5 using diffusion into or out of a solid from or into a gaseous phase {(H01L21/221 - H01L21/222 take precedence; diffusion through an applied layer H01L21/225)}
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H01L21/2233 6 {Diffusion into or out of AIIIBV compounds}
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H01L21/2236 6 {from or into a plasma phase}
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H01L21/225 5 using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer {(H01L21/221 - H01L21/222 take precedence)}
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H01L21/2251 6 {Diffusion into or out of group IV semiconductors}
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H01L21/2252 7 {using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase}
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H01L21/2253 8 {by ion implantation}
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H01L21/2254 7 {from or through or into an applied layer, e.g. photoresist, nitrides}
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H01L21/2255 8 {the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides}
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H01L21/2256 9 {through the applied layer}
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H01L21/2257 8 {the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon}
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H01L21/2258 6 {Diffusion into or out of AIIIBV compounds}
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H01L21/228 5 using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes {(H01L21/221 - H01L21/222 take precedence)}
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H01L21/24 4 Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body {(H01L21/182 takes precedence)}
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H01L21/242 5 {Alloying of doping materials with AIIIBV compounds}
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H01L21/244 5 {Alloying of electrode materials}
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H01L21/246 6 {with AIIIBV compounds}
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H01L21/248 5 {Apparatus specially adapted for the alloying}
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H01L21/26 4 Bombardment with radiation {(H01L21/3105 takes precedence)}
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H01L21/2605 5 {using natural radiation, e.g. alpha, beta or gamma radiation}
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H01L21/261 5 to produce a nuclear reaction transmuting chemical elements
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H01L21/263 5 with high-energy radiation (H01L21/261 takes precedence)
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H01L21/2633 6 {for etching, e.g. sputteretching}
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H01L21/2636 6 {for heating, e.g. electron beam heating}
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H01L21/265 6 producing ion implantation
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H01L21/26506 7 {in group IV semiconductors}
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H01L21/26513 8 {of electrically active species}
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H01L21/2652 9 {Through-implantation}
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H01L21/26526 8 {Recoil-implantation}
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H01L21/26533 8 {of electrically inactive species in silicon to make buried insulating layers}
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H01L21/2654 7 {in AIIIBV compounds}
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H01L21/26546 8 {of electrically active species}
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H01L21/26553 9 {Through-implantation}
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H01L21/2656 8 {characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped}
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H01L21/26566 7 {of a cluster, e.g. using a gas cluster ion beam}
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H01L2021/26573 7 {in diamond}
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H01L21/2658 7 {of a molecular ion, e.g. decaborane}
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H01L21/26586 7 {characterised by the angle between the ion beam and the crystal planes or the main crystal surface}
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H01L21/26593 7 {at a temperature lower than room temperature}
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H01L21/266 7 using masks {(H01L21/26586 takes precedence)}
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H01L21/268 6 using electromagnetic radiation, e.g. laser radiation
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H01L21/2683 7 {using X-ray lasers}
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H01L21/2686 7 {using incoherent radiation}
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H01L21/28 4 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 {(etching for patterning the electrodes H01L21/311, H01L21/3213; multistep manufacturing processes for data storage electrodes H01L29/4011)}
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H01L21/28008 5 {Making conductor-insulator-semiconductor electrodes}
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H01L21/28017 6 {the insulator being formed after the semiconductor body, the semiconductor being silicon}
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H01L21/28026 7 {characterised by the conductor (H01L21/28176 takes precedence)}
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H01L21/28035 8 {the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities (H01L21/28105 takes precedence)}
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H01L21/28044 9 {the conductor comprising at least another non-silicon conductive layer}
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H01L21/28052 10 {the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer (formed by metal ion implantation H01L21/28044)}
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H01L21/28061 10 {the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction (H01L21/28052 takes precedence)}
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H01L21/2807 8 {the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si}
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H01L21/28079 8 {the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al}
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H01L21/28088 8 {the final conductor layer next to the insulator being a composite, e.g. TiN}
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H01L21/28097 8 {the final conductor layer next to the insulator being a metallic silicide}
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H01L21/28105 8 {the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step}
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H01L21/28114 8 {characterised by the sectional shape, e.g. T, inverted-T}
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H01L21/28123 8 {Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects}
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H01L21/28132 9 {conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating}
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H01L21/28141 9 {insulating part of the electrode is defined by a sidewall spacer, e.g. dummy spacer, or a similar technique, e.g. oxidation under mask, plating}
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H01L21/2815 9 {part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating}
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H01L21/28158 7 {Making the insulator}
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H01L21/28167 8 {on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation}
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H01L21/28176 9 {with a treatment, e.g. annealing, after the formation of the definitive gate conductor}
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H01L21/28185 9 {with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor}
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H01L21/28194 9 {by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition (H01L21/28202 takes precedence)}
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H01L21/28202 9 {in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN}
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H01L21/28211 9 {in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer (H01L21/28194 and H01L21/28202 take precedence)}
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H01L21/2822 8 {with substrate doping, e.g. N, Ge, C implantation, before formation of the insulator}
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H01L21/28229 8 {by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer}
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H01L21/28238 8 {with sacrificial oxide}
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H01L21/28247 7 {passivation or protection of the electrode, e.g. using re-oxidation}
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H01L21/28255 6 {the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC}
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H01L21/28264 6 {the insulator being formed after the semiconductor body, the semiconductor being a III-V compound}
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H01L21/283 5 Deposition of conductive or insulating materials for electrodes {conducting electric current}
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H01L21/285 6 from a gas or vapour, e.g. condensation
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H01L21/28506 7 {of conductive layers}
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H01L21/28512 8 {on semiconductor bodies comprising elements of Group IV of the Periodic System}
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H01L21/28518 9 {the conductive layers comprising silicides (H01L21/28537 takes precedence)}
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H01L21/28525 9 {the conductive layers comprising semiconducting material (H01L21/28518, H01L21/28537 take precedence)}
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H01L21/28531 10 {Making of side-wall contacts}
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H01L21/28537 9 {Deposition of Schottky electrodes}
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H01L21/2855 9 {by physical means, e.g. sputtering, evaporation (H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence)}
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H01L21/28556 9 {by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD (H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence)}
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H01L21/28562 10 {Selective deposition}
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H01L21/28568 9 {the conductive layers comprising transition metals (H01L21/28518 takes precedence)}
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H01L21/28575 8 {on semiconductor bodies comprising AIIIBV compounds}
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H01L21/28581 9 {Deposition of Schottky electrodes}
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H01L21/28587 9 {characterised by the sectional shape, e.g. T, inverted T}
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H01L21/28593 10 {asymmetrical sectional shape}
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H01L21/288 6 from a liquid, e.g. electrolytic deposition
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H01L21/2885 7 {using an external electrical current, i.e. electro-deposition}
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H01L21/30 4 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 (manufacture of electrodes thereon H01L21/28)
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H01L21/3003 5 {Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}
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H01L21/3006 6 {of AIIIBV compounds}
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H01L21/302 5 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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H01L21/304 6 Mechanical treatment, e.g. grinding, polishing, cutting {(H01L21/30625 takes precedence)}
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H01L21/3043 7 {Making grooves, e.g. cutting}
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H01L21/3046 7 {using blasting, e.g. sand-blasting (H01L21/2633 takes precedence)}
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H01L21/306 6 Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L21/31)
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H01L21/30604 7 {Chemical etching}
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H01L21/30608 8 {Anisotropic liquid etching (H01L21/3063 takes precedence)}
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H01L21/30612 8 {Etching of AIIIBV compounds}
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H01L21/30617 9 {Anisotropic liquid etching}
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H01L21/30621 9 {Vapour phase etching}
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H01L21/30625 7 {With simultaneous mechanical treatment, e.g. mechanico-chemical polishing}
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H01L21/3063 7 Electrolytic etching
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H01L21/30635 8 {of AIIIBV compounds}
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H01L21/3065 7 Plasma etching; Reactive-ion etching
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H01L21/30655 8 {comprising alternated and repeated etching and passivation steps, e.g. Bosch process}
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H01L21/308 7 using masks (H01L21/3063, H01L21/3065 take precedence)
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H01L21/3081 8 {characterised by their composition, e.g. multilayer masks, materials}
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H01L21/3083 8 {characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane}
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H01L21/3085 9 {characterised by their behaviour during the process, e.g. soluble masks, redeposited masks}
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H01L21/3086 9 {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}
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H01L21/3088 9 {Process specially adapted to improve the resolution of the mask}
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H01L21/31 5 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L21/56); After treatment of these layers; Selection of materials for these layers
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H01L21/3105 6 After-treatment
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H01L21/31051 7 {Planarisation of the insulating layers (H01L21/31058 takes precedence)}
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H01L21/31053 8 {involving a dielectric removal step}
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H01L21/31055 9 {the removal being a chemical etching step, e.g. dry etching (etching per se H01L21/311)}
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H01L21/31056 10 {the removal being a selective chemical etching step, e.g. selective dry etching through a mask}
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H01L21/31058 7 {of organic layers}
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H01L21/311 7 Etching the insulating layers {by chemical or physical means (H01L21/31058 takes precedence)}
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H01L21/31105 8 {Etching inorganic layers}
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H01L21/31111 9 {by chemical means}
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H01L21/31116 10 {by dry-etching}
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H01L21/31122 11 {of layers not containing Si, e.g. PZT, Al2O3}
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H01L21/31127 8 {Etching organic layers}
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H01L21/31133 9 {by chemical means}
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H01L21/31138 10 {by dry-etching}
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H01L21/31144 8 {using masks}
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H01L21/3115 7 Doping the insulating layers
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H01L21/31155 8 {by ion implantation}
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H01L21/312 6 Organic layers, e.g. photoresist (H01L21/3105, H01L21/32 take precedence; {photoresists per se G03C})
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H01L21/3121 7 {Layers comprising organo-silicon compounds}
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H01L21/3122 8 {layers comprising polysiloxane compounds}
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H01L21/3124 9 {layers comprising hydrogen silsesquioxane}
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H01L21/3125 8 {layers comprising silazane compounds}
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H01L21/3127 7 {Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene}
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H01L21/3128 7 {by Langmuir-Blodgett techniques}
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H01L21/314 6 Inorganic layers (H01L21/3105, H01L21/32 take precedence)
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H01L21/3141 7 {Deposition using atomic layer deposition techniques [ALD]}
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H01L21/3142 8 {of nano-laminates, e.g. alternating layers of Al203-Hf02}
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H01L21/3143 7 {composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers}
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H01L21/3144 8 {on silicon}
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H01L21/3145 8 {formed by deposition from a gas or vapour}
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H01L21/3146 7 {Carbon layers, e.g. diamond-like layers}
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H01L21/3147 7 {Epitaxial deposition of insulating materials}
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H01L21/3148 7 {Silicon Carbide layers}
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H01L2021/3149 8 {Langmuir-Blodgett techniques}
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H01L21/316 7 composed of oxides or glassy oxides or oxide based glass
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H01L21/31604 8 {Deposition from a gas or vapour (H01L21/31691, H01L21/31695 take precedence)}
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H01L21/31608 9 {Deposition of SiO2 (H01L21/31625, H01L21/31629 and H01L21/31633 take precedence)}
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H01L21/31612 10 {on a silicon body}
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H01L21/31616 9 {Deposition of Al2O3}
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H01L21/3162 10 {on a silicon body}
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H01L21/31625 9 {Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG}
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H01L21/31629 9 {Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide}
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H01L21/31633 9 {Deposition of carbon doped silicon oxide, e.g. SiOC}
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H01L21/31637 9 {Deposition of Tantalum oxides, e.g. Ta2O5}
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H01L21/31641 9 {Deposition of Zirconium oxides, e.g. ZrO2}
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H01L21/31645 9 {Deposition of Hafnium oxides, e.g. HfO2}
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H01L21/3165 8 {formed by oxidation (H01L21/31691, H01L21/31695 take precedence)}
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H01L21/31654 9 {of semiconductor materials, e.g. the body itself}
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H01L21/31658 10 {by thermal oxidation, e.g. of SiGe}
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H01L21/31662 11 {of silicon in uncombined form}
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H01L21/31666 11 {of AIII BV compounds}
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H01L21/3167 10 {of anodic oxidation}
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H01L21/31675 11 {of silicon}
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H01L21/31679 11 {of AIII BV compounds}
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H01L21/31683 9 {of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures}
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H01L21/31687 10 {by anodic oxidation}
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H01L21/31691 8 {with perovskite structure}
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H01L21/31695 8 {Deposition of porous oxides or porous glassy oxides or oxide based porous glass}
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H01L21/318 7 composed of nitrides
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H01L21/3185 8 {of siliconnitrides}
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H01L21/32 6 using masks
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H01L21/3205 6 Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L21/28)
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H01L21/32051 7 {Deposition of metallic or metal-silicide layers}
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H01L21/32053 8 {of metal-silicide layers}
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H01L21/32055 7 {Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers}
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H01L21/32056 7 {Deposition of conductive or semi-conductive organic layers (H01L21/32058 takes precedence)}
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H01L21/32058 7 {Deposition of superconductive layers}
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H01L21/321 7 After treatment
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H01L21/32105 8 {Oxidation of silicon-containing layers}
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H01L21/3211 8 {Nitridation of silicon-containing layers}
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H01L21/32115 8 {Planarisation}
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H01L21/3212 9 {by chemical mechanical polishing [CMP]}
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H01L21/32125 10 {by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP}
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H01L21/3213 8 Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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H01L21/32131 9 {by physical means only}
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H01L21/32132 10 {of silicon-containing layers}
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H01L21/32133 9 {by chemical means only}
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H01L21/32134 10 {by liquid etching only}
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H01L21/32135 10 {by vapour etching only}
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H01L21/32136 11 {using plasmas}
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H01L21/32137 12 {of silicon-containing layers}
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H01L21/32138 11 {pre- or post-treatments, e.g. anti-corrosion processes}
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H01L21/32139 9 {using masks}
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H01L21/3215 8 Doping the layers
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H01L21/32155 9 {Doping polycristalline - or amorphous silicon layers}
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H01L21/322 5 to modify their internal properties, e.g. to produce internal imperfections
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H01L21/3221 6 {of silicon bodies, e.g. for gettering}
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H01L21/3223 7 {using cavities formed by hydrogen or noble gas ion implantation}
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H01L21/3225 7 {Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering (H01L21/3226 takes precedence)}
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H01L21/3226 7 {of silicon on insulator}
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H01L21/3228 6 {of AIIIBV compounds, e.g. to make them semi-insulating}
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H01L21/324 5 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence)
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H01L21/3242 6 {for the formation of PN junctions without addition of impurities (H01L21/22 takes precedence)}
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H01L21/3245 6 {of AIIIBV compounds}
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H01L21/3247 6 {for altering the shape, e.g. smoothing the surface}
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H01L21/326 5 Application of electric currents or fields, e.g. for electroforming (H01L21/20 - H01L21/288 and H01L21/302 - H01L21/324 take precedence)
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H01L21/34 3 the devices having semiconductor bodies not provided for in groups {H01L21/0405, H01L21/0445} , H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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H01L21/38 4 Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
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H01L21/383 5 using diffusion into or out of a solid from or into a gaseous phase
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H01L21/385 5 using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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H01L21/388 5 using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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H01L21/40 4 Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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H01L21/42 4 Bombardment with radiation
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H01L21/423 5 with high-energy radiation
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H01L21/425 6 producing ion implantation
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H01L21/426 7 using masks
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H01L21/428 6 using electromagnetic radiation, e.g. laser radiation
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H01L21/44 4 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
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H01L21/441 5 Deposition of conductive or insulating materials for electrodes
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H01L21/443 6 from a gas or vapour, e.g. condensation
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H01L21/445 6 from a liquid, e.g. electrolytic deposition
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H01L21/447 5 involving the application of pressure, e.g. thermo-compression bonding
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H01L21/449 5 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
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H01L21/46 4 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 (manufacture of electrodes thereon H01L21/44)
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H01L21/461 5 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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H01L21/463 6 Mechanical treatment, e.g. grinding, ultrasonic treatment
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H01L21/465 6 Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L21/469)
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H01L21/467 7 using masks
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H01L21/469 6 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L21/56); After-treatment of these layers
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H01L21/47 7 Organic layers, e.g. photoresist (H01L21/475, H01L21/4757 take precedence)
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H01L21/471 7 Inorganic layers (H01L21/475, H01L21/4757 take precedence)
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H01L21/473 8 composed of oxides or glassy oxides or oxide based glass
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H01L21/475 7 using masks
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H01L21/4757 7 After-treatment
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H01L21/47573 8 {Etching the layer}
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H01L21/47576 8 {Doping the layer}
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H01L21/4763 6 Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L21/28, {H01L21/44})
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H01L21/47635 7 {After-treatment of these layers}
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H01L21/477 5 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence)
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H01L21/479 5 Application of electric currents or fields, e.g. for electroforming (H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence)
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H01L21/48 3 Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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H01L21/4803 4 {Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks (H01L21/4846 takes precedence; printed circuit boards H05K1/00)}
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H01L21/4807 5 {Ceramic parts}
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H01L21/481 5 {Insulating layers on insulating parts, with or without metallisation}
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H01L21/4814 4 {Conductive parts}
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H01L21/4817 5 {for containers, e.g. caps (H01L21/4871 takes precedence)}
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H01L21/4821 5 {Flat leads, e.g. lead frames with or without insulating supports}
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H01L21/4825 6 {Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads}
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H01L21/4828 6 {Etching (etching for cleaning without patterning H01L21/4835)}
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H01L21/4832 7 {Etching a temporary substrate after encapsulation process to form leads}
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H01L21/4835 6 {Cleaning, e.g. removing of solder}
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H01L21/4839 6 {Assembly of a flat lead with an insulating support, e.g. for TAB}
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H01L21/4842 6 {Mechanical treatment, e.g. punching, cutting, deforming, cold welding}
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H01L21/4846 5 {Leads on or in insulating or insulated substrates, e.g. metallisation (H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00)}
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H01L21/485 6 {Adaptation of interconnections, e.g. engineering charges, repair techniques}
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H01L21/4853 6 {Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps}
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H01L21/4857 6 {Multilayer substrates (multilayer metallisation on monolayer substrate H01L21/4846)}
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H01L21/486 6 {Via connections through the substrate with or without pins}
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H01L21/4864 6 {Cleaning, e.g. removing of solder}
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H01L21/4867 6 {Applying pastes or inks, e.g. screen printing (H01L21/486 takes precedence)}
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H01L21/4871 5 {Bases, plates or heatsinks}
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H01L21/4875 6 {Connection or disconnection of other leads to or from bases or plates}
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H01L21/4878 6 {Mechanical treatment, e.g. deforming}
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H01L21/4882 6 {Assembly of heatsink parts}
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H01L21/4885 5 {Wire-like parts or pins (wire ball formation B23K20/00; methods related to connecting semiconductor or other solid state bodies H01L24/00)}
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H01L21/4889 6 {Connection or disconnection of other leads to or from wire-like parts, e.g. wires}
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H01L21/4892 6 {Cleaning}
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H01L21/4896 6 {Mechanical treatment, e.g. cutting, bending}
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H01L21/50 3 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, {e.g. sealing of a cap to a base of a container}
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H01L21/52 4 Mounting semiconductor bodies in containers
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H01L21/54 4 Providing fillings in containers, e.g. gas fillings
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H01L21/56 4 Encapsulations, e.g. encapsulation layers, coatings
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H01L21/561 5 {Batch processing}
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H01L21/563 5 {Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate}
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H01L21/565 5 {Moulds}
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H01L21/566 6 {Release layers for moulds, e.g. release layers, layers against residue during moulding}
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H01L21/568 5 {Temporary substrate used as encapsulation process aid (H01L21/4832 and H01L21/566 take precedence)}
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H01L21/60 4 Attaching {or detaching} leads or other conductive members, to be used for carrying current to or from the device in operation
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H01L2021/60007 5 {involving a soldering or an alloying process}
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H01L2021/60015 6 {using plate connectors, e.g. layer, film}
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H01L2021/60022 6 {using bump connectors, e.g. for flip chip mounting}
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H01L2021/6003 7 {Apparatus therefor}
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H01L2021/60037 7 {Right-up bonding}
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H01L2021/60045 7 {Pre-treatment step of the bump connectors prior to bonding}
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H01L2021/60052 8 {Oxide removing step, e.g. flux, rosin}
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H01L2021/6006 7 {with temporary supporting member not part of an apparatus, e.g. removable coating, film or substrate}
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H01L2021/60067 7 {Aligning the bump connectors with the mounting substrate}
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H01L2021/60075 8 {involving active alignment, i.e. by apparatus steering, e.g. using alignment marks, sensors}
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H01L2021/60082 8 {involving passive alignment, e.g. using surface energy, chemical reactions, thermal equilibrium}
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H01L2021/6009 8 {involving guiding structures, e.g. structures that are left at least partly in the bonded product, spacers}
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H01L2021/60097 7 {Applying energy, e.g. for the soldering or alloying process}
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H01L2021/60105 8 {using electromagnetic radiation}
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H01L2021/60112 9 {Coherent radiation, i.e. laser beam}
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H01L2021/6012 9 {Incoherent radiation, e.g. polychromatic heating lamp}
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H01L2021/60127 9 {Induction heating, i.e. eddy currents}
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H01L2021/60135 8 {using convection, e.g. reflow oven}
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H01L2021/60142 9 {with a graded temperature profile}
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H01L2021/6015 8 {using conduction, e.g. chuck heater, thermocompression}
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H01L2021/60157 9 {with a graded temperature profile}
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H01L2021/60165 8 {using an electron beam}
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H01L2021/60172 8 {using static pressure}
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H01L2021/6018 9 {Unidirectional static pressure}
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H01L2021/60187 9 {Isostatic pressure, e.g. degassing using vacuum or pressurised liquid}
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H01L2021/60195 8 {using dynamic pressure, e.g. ultrasonic or thermosonic bonding}
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H01L2021/60202 8 {using a protective atmosphere, e.g. with forming or shielding gas}
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H01L2021/6021 8 {using an autocatalytic reaction}
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H01L2021/60217 7 {Detaching bump connectors, e.g. after testing}
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H01L2021/60225 7 {Arrangement of bump connectors prior to mounting}
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H01L2021/60232 8 {wherein the bump connectors are disposed only on the semiconductor chip}
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H01L2021/6024 8 {wherein the bump connectors are disposed only on the mounting substrate}
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H01L2021/60247 8 {wherein the bump connectors are disposed on both the semiconductor chip and the mounting substrate, e.g. bump to bump}
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H01L2021/60255 8 {wherein the bump connectors are provided as prepeg, e.g. are provided in an insulating plate member}
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H01L2021/60262 8 {Lateral distribution of bump connectors prior to mounting}
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H01L2021/6027 6 {Mounting on semiconductor conductive members}
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H01L2021/60277 5 {involving the use of conductive adhesives}
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H01L2021/60285 5 {involving the use of mechanical auxiliary parts without the use of an alloying or soldering process, e.g. pressure contacts}
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H01L2021/60292 5 {involving the use of an electron or laser beam}
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H01L21/603 5 involving the application of pressure, e.g. thermo-compression bonding (H01L21/607 takes precedence)
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H01L21/607 5 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
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H01L21/62 2 the devices having no potential-jump barriers or surface barriers
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H01L21/64 1 Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
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H01L21/67 1 Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components {; Apparatus not specifically provided for elsewhere (processes per se H01L21/30, H01L21/46, H01L23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L21/68, H01L21/302; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto H01L24/74;)}
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H01L21/67005 2 {Apparatus not specifically provided for elsewhere (processes per se H01L21/30, H01L21/46, H01L23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L21/68, H01L21/302)}
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H01L21/67011 3 {Apparatus for manufacture or treatment (processes H01L21/30, H01L21/46; for production or after-treatment of single crystals or homogeneous polycrystalline material C30B35/00)}
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H01L21/67017 4 {Apparatus for fluid treatment (H01L21/67126, H01L21/6715 take precedence)}
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H01L21/67023 5 {for general liquid treatment, e.g. etching followed by cleaning}
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H01L21/67028 5 {for cleaning followed by drying, rinsing, stripping, blasting or the like}
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H01L21/67034 6 {for drying}
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H01L21/6704 6 {for wet cleaning or washing}
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H01L21/67046 7 {using mainly scrubbing means, e.g. brushes}
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H01L21/67051 7 {using mainly spraying means, e.g. nozzles}
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H01L21/67057 7 {with the semiconductor substrates being dipped in baths or vessels}
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H01L21/67063 5 {for etching}
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H01L21/67069 6 {for drying etching}
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H01L21/67075 6 {for wet etching}
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H01L21/6708 7 {using mainly spraying means, e.g. nozzles}
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H01L21/67086 7 {with the semiconductor substrates being dipped in baths or vessels}
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H01L21/67092 4 {Apparatus for mechanical treatment (or grinding or cutting, see the relevant groups in subclasses B24B or B28D)}
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H01L21/67098 4 {Apparatus for thermal treatment}
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H01L21/67103 5 {mainly by conduction}
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H01L21/67109 5 {mainly by convection}
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H01L21/67115 5 {mainly by radiation}
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H01L21/67121 4 {Apparatus for making assemblies not otherwise provided for, e.g. package constructions}
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H01L21/67126 4 {Apparatus for sealing, encapsulating, glassing, decapsulating or the like (processes H01L23/02, H01L23/28)}
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H01L21/67132 4 {Apparatus for placing on an insulating substrate, e.g. tape}
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H01L21/67138 4 {Apparatus for wiring semiconductor or solid state device}
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H01L21/67144 4 {Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates}
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H01L21/6715 4 {Apparatus for applying a liquid, a resin, an ink or the like (H01L21/67126 takes precedence)}
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H01L21/67155 4 {Apparatus for manufacturing or treating in a plurality of work-stations}
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H01L21/67161 5 {characterized by the layout of the process chambers}
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H01L21/67167 6 {surrounding a central transfer chamber}
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H01L21/67173 6 {in-line arrangement}
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H01L21/67178 6 {vertical arrangement}
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H01L21/67184 5 {characterized by the presence of more than one transfer chamber}
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H01L21/6719 5 {characterized by the construction of the processing chambers, e.g. modular processing chambers}
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H01L21/67196 5 {characterized by the construction of the transfer chamber}
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H01L21/67201 5 {characterized by the construction of the load-lock chamber}
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H01L21/67207 5 {comprising a chamber adapted to a particular process}
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H01L21/67213 6 {comprising at least one ion or electron beam chamber (coating by ion implantation C23C; ion or electron beam tubes H01J37/00)}
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H01L21/67219 6 {comprising at least one polishing chamber (polishing apparatuses B24B)}
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H01L21/67225 6 {comprising at least one lithography chamber (lithographic apparatuses G03F7/00)}
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H01L21/6723 6 {comprising at least one plating chamber (electroless plating apparatuses C23C, electroplating apparatuses C25D)}
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H01L21/67236 5 {the substrates being processed being not semiconductor wafers, e.g. leadframes or chips}
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H01L21/67242 3 {Apparatus for monitoring, sorting or marking (testing or measuring during manufacture H01L22/00, marks per se H01L23/544; testing individual semiconductor devices G01R31/26)}
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H01L21/67248 4 {Temperature monitoring}
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H01L21/67253 4 {Process monitoring, e.g. flow or thickness monitoring}
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H01L21/67259 4 {Position monitoring, e.g. misposition detection or presence detection}
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H01L21/67265 5 {of substrates stored in a container, a magazine, a carrier, a boat or the like}
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H01L21/67271 4 {Sorting devices}
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H01L21/67276 4 {Production flow monitoring, e.g. for increasing throughput (program-control systems per se G05B19/00, e.g. total factory control G05B19/418)}
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H01L21/67282 4 {Marking devices}
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H01L21/67288 4 {Monitoring of warpage, curvature, damage, defects or the like}
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H01L21/67294 4 {using identification means, e.g. labels on substrates or labels on containers}
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H01L21/673 2 using specially adapted carriers {or holders; Fixing the workpieces on such carriers or holders (holders for supporting a complete device in operation H01L23/32)}
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H01L21/67303 3 {Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements}
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H01L21/67306 4 {characterized by a material, a roughness, a coating or the like}
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H01L21/67309 4 {characterized by the substrate support}
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H01L21/67313 3 {Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements}
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H01L21/67316 4 {characterized by a material, a roughness, a coating or the like}
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H01L21/6732 3 {Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls}
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H01L21/67323 4 {characterized by a material, a roughness, a coating or the like}
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H01L21/67326 3 {Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls}
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H01L21/6733 4 {characterized by a material, a roughness, a coating or the like}
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H01L21/67333 3 {Trays for chips (magazine for components H05K13/0084)}
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H01L21/67336 4 {characterized by a material, a roughness, a coating or the like}
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H01L21/6734 3 {specially adapted for supporting large square shaped substrates (containers and packaging elements for glass sheets B65D85/48, transporting of glass products during their manufacture C03B35/00)}
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H01L21/67343 4 {characterized by a material, a roughness, a coating or the like}
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H01L21/67346 3 {characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports}
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H01L21/6735 3 {Closed carriers}
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H01L21/67353 4 {specially adapted for a single substrate}
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H01L21/67356 4 {specially adapted for containing chips, dies or ICs}
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H01L21/67359 4 {specially adapted for containing masks, reticles or pellicles}
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H01L21/67363 4 {specially adapted for containing substrates other than wafers (H01L21/67356, H01L21/67359 take precedence)}
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H01L21/67366 4 {characterised by materials, roughness, coatings or the like (materials relating to an injection moulding process B29C45/00; chemical composition of materials C08L51/00)}
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H01L21/67369 4 {characterised by shock absorbing elements, e.g. retainers or cushions}
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H01L21/67373 4 {characterised by locking systems}
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H01L21/67376 4 {characterised by sealing arrangements}
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H01L21/67379 4 {characterised by coupling elements, kinematic members, handles or elements to be externally gripped}
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H01L21/67383 4 {characterised by substrate supports}
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H01L21/67386 4 {characterised by the construction of the closed carrier}
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H01L21/67389 4 {characterised by atmosphere control}
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H01L21/67393 5 {characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl}
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H01L21/67396 4 {characterised by the presence of antistatic elements}
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H01L21/677 2 for conveying, e.g. between different workstations
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H01L21/67703 3 {between different workstations}
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H01L21/67706 4 {Mechanical details, e.g. roller, belt (H01L21/67709 takes precedence)}
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H01L21/67709 4 {using magnetic elements}
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H01L21/67712 4 {the substrate being handled substantially vertically}
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H01L21/67715 4 {Changing the direction of the conveying path}
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H01L21/67718 4 {Changing orientation of the substrate, e.g. from a horizontal position to a vertical position}
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H01L21/67721 4 {the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames (H01L21/6773 takes precedence)}
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H01L21/67724 4 {by means of a cart or a vehicule}
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H01L21/67727 4 {using a general scheme of a conveying path within a factory}
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H01L21/6773 4 {Conveying cassettes, containers or carriers}
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H01L21/67733 4 {Overhead conveying}
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H01L21/67736 4 {Loading to or unloading from a conveyor}
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H01L21/67739 3 {into and out of processing chamber}
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H01L21/67742 4 {Mechanical parts of transfer devices (robots in general in B25J)}
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H01L21/67745 4 {characterized by movements or sequence of movements of transfer devices}
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H01L21/67748 4 {horizontal transfer of a single workpiece}
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H01L21/67751 4 {vertical transfer of a single workpiece}
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H01L21/67754 4 {horizontal transfer of a batch of workpieces}
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H01L21/67757 4 {vertical transfer of a batch of workpieces}
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H01L21/6776 4 {Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers}
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H01L21/67763 3 {the wafers being stored in a carrier, involving loading and unloading (H01L21/6779 takes precedence)}
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H01L21/67766 4 {Mechanical parts of transfer devices (robots in general in B25J)}
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H01L21/67769 4 {Storage means}
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H01L21/67772 4 {involving removal of lid, door, cover}
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H01L21/67775 4 {Docking arrangements}
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H01L21/67778 4 {involving loading and unloading of wafers}
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H01L21/67781 5 {Batch transfer of wafers}
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H01L21/67784 3 {using air tracks}
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H01L21/67787 4 {with angular orientation of the workpieces}
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H01L21/6779 4 {the workpieces being stored in a carrier, involving loading and unloading}
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H01L21/67793 3 {with orientating and positioning by means of a vibratory bowl or track}
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H01L21/67796 3 {with angular orientation of workpieces (H01L21/67787 and H01L21/67793 take precedence)}
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H01L21/68 2 for positioning, orientation or alignment
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H01L21/681 3 {using optical controlling means}
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H01L21/682 3 {Mask-wafer alignment (in general G03F7/70, G03F9/70)}
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H01L21/683 2 for supporting or gripping (for conveying H01L21/677, for positioning, orientation or alignment H01L21/68)
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H01L21/6831 3 {using electrostatic chucks}
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H01L21/6833 4 {Details of electrostatic chucks}
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H01L21/6835 3 {using temporarily an auxiliary support}
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H01L21/6836 4 {Wafer tapes, e.g. grinding or dicing support tapes (adhesive tapes in general C09J7/20)}
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H01L21/6838 3 {with gripping and holding devices using a vacuum; Bernoulli devices}
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H01L21/687 3 using mechanical means, e.g. chucks, clamps or pinches {(using elecrostatic chucks H01L21/6831)}
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H01L21/68707 4 {the wafers being placed on a robot blade, or gripped by a gripper for conveyance}
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H01L21/68714 4 {the wafers being placed on a susceptor, stage or support}
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H01L21/68721 5 {characterised by edge clamping, e.g. clamping ring}
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H01L21/68728 5 {characterised by a plurality of separate clamping members, e.g. clamping fingers}
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H01L21/68735 5 {characterised by edge profile or support profile}
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H01L21/68742 5 {characterised by a lifting arrangement, e.g. lift pins}
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H01L21/6875 5 {characterised by a plurality of individual support members, e.g. support posts or protrusions}
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H01L21/68757 5 {characterised by a coating or a hardness or a material}
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H01L21/68764 5 {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel}
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H01L21/68771 5 {characterised by supporting more than one semiconductor substrate}
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H01L21/68778 5 {characterised by supporting substrates others than wafers, e.g. chips}
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H01L21/68785 5 {characterised by the mechanical construction of the susceptor, stage or support}
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H01L21/68792 5 {characterised by the construction of the shaft}
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H01L21/70 1 Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof ({multistep manufacturing processes of assemblies consisting of a plurality of individual semiconductor or other solid state devices H01L25/00; } manufacture of assemblies consisting of preformed electrical components H05K3/00, H05K13/00)
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H01L21/702 2 {of thick-or thin-film circuits or parts thereof}
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H01L21/705 3 {of thick-film circuits or parts thereof}
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H01L21/707 3 {of thin-film circuits or parts thereof}
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H01L21/71 2 Manufacture of specific parts of devices defined in group H01L21/70 ({H01L21/0405, H01L21/0445} , H01L21/28, H01L21/44, H01L21/48 take precedence)
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H01L21/74 3 Making of {localized} buried regions, e.g. buried collector layers, internal connections {substrate contacts}
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H01L21/743 4 {Making of internal connections, substrate contacts}
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H01L21/746 4 {for AIII-BV integrated circuits}
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H01L21/76 3 Making of isolation regions between components
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H01L21/7602 4 {between components manufactured in an active substrate comprising SiC compounds}
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H01L21/7605 4 {between components manufactured in an active substrate comprising AIII BV compounds}
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H01L21/7607 4 {between components manufactured in an active substrate comprising AIIBVI compounds}
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H01L21/761 4 PN junctions
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H01L21/762 4 Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers}
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H01L21/76202 5 {using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO (H01L21/76235 takes precedence; together with vertical isolation, e.g. LOCOS in a SOI substrate, H01L21/76264)}
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H01L21/76205 6 {in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region}
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H01L21/76208 7 {using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas}
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H01L21/7621 7 {the recessed region having a shape other than rectangular, e.g. rounded or oblique shape (H01L21/76208 takes precedence)}
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H01L21/76213 6 {introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose}
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H01L21/76216 7 {introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers}
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H01L21/76218 8 {introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions}
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H01L21/76221 6 {with a plurality of successive local oxidation steps}
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H01L21/76224 5 {using trench refilling with dielectric materials (trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264)}
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H01L21/76227 6 {the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals}
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H01L21/76229 6 {Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches}
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H01L21/76232 6 {of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls (H01L21/76229 takes precedence)}
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H01L21/76235 7 {trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS}
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H01L21/76237 6 {introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior}
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H01L21/7624 5 {using semiconductor on insulator [SOI] technology (H01L21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L21/84; silicon on sapphire [SOS] technology H01L21/86)}
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H01L21/76243 6 {using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques}
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H01L21/76245 6 {using full isolation by porous oxide silicon, i.e. FIPOS techniques}
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H01L21/76248 6 {using lateral overgrowth techniques, i.e. ELO techniques}
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H01L21/76251 6 {using bonding techniques}
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H01L21/76254 7 {with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond}
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H01L21/76256 7 {using silicon etch back techniques, e.g. BESOI, ELTRAN}
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H01L21/76259 7 {with separation/delamination along a porous layer}
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H01L21/76262 6 {using selective deposition of single crystal silicon, i.e. SEG techniques}
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H01L21/76264 6 {SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands}
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H01L21/76267 7 {Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques}
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H01L21/7627 7 {Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques}
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H01L21/76272 7 {Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques}
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H01L21/76275 7 {Vertical isolation by bonding techniques}
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H01L21/76278 7 {Vertical isolation by selective deposition of single crystal silicon, i.e. SEG techniques}
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H01L21/76281 7 {Lateral isolation by selective oxidation of silicon}
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H01L21/76283 7 {Lateral isolation by refilling of trenches with dielectric material}
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H01L21/76286 7 {Lateral isolation by refilling of trenches with polycristalline material}
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H01L21/76289 7 {Lateral isolation by air gap}
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H01L21/76291 7 {Lateral isolation by field effect}
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H01L21/76294 5 {using selective deposition of single crystal silicon, i.e. SEG techniques}
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H01L21/76297 5 {Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit}
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H01L21/763 4 Polycrystalline semiconductor regions {(H01L21/76264 takes precedence)}
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H01L21/764 4 Air gaps {(H01L21/76264 takes precedence)}
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H01L21/765 4 by field effect {(H01L21/76264 takes precedence)}
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H01L21/768 3 Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}
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H01L21/76801 4 {characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing}
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H01L21/76802 5 {by forming openings in dielectrics}
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H01L21/76804 6 {by forming tapered via holes}
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H01L21/76805 6 {the opening being a via or contact hole penetrating the underlying conductor}
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H01L21/76807 6 {for dual damascene structures}
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H01L21/76808 7 {involving intermediate temporary filling with material}
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H01L21/7681 7 {involving one or more buried masks}
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H01L21/76811 7 {involving multiple stacked pre-patterned masks}
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H01L21/76813 7 {involving a partial via etch}
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H01L21/76814 6 {post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors}
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H01L21/76816 6 {Aspects relating to the layout of the pattern or to the size of vias or trenches (layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00)}
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H01L21/76817 6 {using printing or stamping techniques}
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H01L21/76819 5 {Smoothing of the dielectric (planarisation of insulating materials per se H01L21/31051)}
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H01L21/7682 5 {the dielectric comprising air gaps}
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H01L21/76822 5 {Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.}
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H01L21/76823 6 {transforming an insulating layer into a conductive layer}
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H01L21/76825 6 {by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. (plasma treatment H01L21/76826)}
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H01L21/76826 6 {by contacting the layer with gases, liquids or plasmas}
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H01L21/76828 6 {thermal treatment}
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H01L21/76829 5 {characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
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H01L21/76831 6 {in via holes or trenches, e.g. non-conductive sidewall liners}
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H01L21/76832 6 {Multiple layers}
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H01L21/76834 6 {formation of thin insulating films on the sidewalls or on top of conductors (H01L21/76831 takes precedence)}
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H01L21/76835 5 {Combinations of two or more different dielectric layers having a low dielectric constant (H01L21/76832 takes precedence)}
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H01L21/76837 5 {Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics}
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H01L21/76838 4 {characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors H01L21/3213)}
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H01L21/7684 5 {Smoothing; Planarisation}
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H01L21/76841 5 {Barrier, adhesion or liner layers}
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H01L21/76843 6 {formed in openings in a dielectric}
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H01L21/76844 7 {Bottomless liners}
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H01L21/76846 7 {Layer combinations}
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H01L21/76847 7 {the layer being positioned within the main fill metal}
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H01L21/76849 7 {the layer being positioned on top of the main fill metal}
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H01L21/7685 6 {the layer covering a conductive structure (H01L21/76849 takes precedence)}
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H01L21/76852 7 {the layer also covering the sidewalls of the conductive structure}
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H01L21/76853 6 {characterized by particular after-treatment steps}
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H01L21/76855 7 {After-treatment introducing at least one additional element into the layer}
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H01L21/76856 8 {by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner}
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H01L21/76858 8 {by diffusing alloying elements}
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H01L21/76859 8 {by ion implantation}
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H01L21/76861 7 {Post-treatment or after-treatment not introducing additional chemical elements into the layer}
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H01L21/76862 8 {Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation}
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H01L21/76864 8 {Thermal treatment}
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H01L21/76865 7 {Selective removal of parts of the layer (H01L21/76844 takes precedence)}
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H01L21/76867 6 {characterized by methods of formation other than PVD, CVD or deposition from a liquids (PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288)}
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H01L21/76868 6 {Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films}
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H01L21/7687 6 {Thin films associated with contacts of capacitors}
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H01L21/76871 6 {Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers}
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H01L21/76873 7 {for electroplating}
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H01L21/76874 7 {for electroless plating}
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H01L21/76876 7 {for deposition from the gas phase, e.g. CVD}
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H01L21/76877 5 {Filling of holes, grooves or trenches, e.g. vias, with conductive material}
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H01L21/76879 6 {by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general H01L21/288)}
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H01L21/7688 6 {by deposition over sacrificial masking layer, e.g. lift-off (lift-off per se H01L21/0272)}
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H01L21/76882 6 {Reflowing or applying of pressure to better fill the contact hole}
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H01L21/76883 6 {Post-treatment or after-treatment of the conductive material}
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H01L21/76885 5 {By forming conductive members before deposition of protective insulating material, e.g. pillars, studs}
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H01L21/76886 5 {Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances}
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H01L21/76888 6 {By rendering at least a portion of the conductor non conductive, e.g. oxidation}
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H01L21/76889 6 {by forming silicides of refractory metals}
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H01L21/76891 6 {by using superconducting materials}
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H01L21/76892 6 {modifying the pattern}
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H01L21/76894 7 {using a laser, e.g. laser cutting, laser direct writing, laser repair}
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H01L21/76895 5 {Local interconnects; Local pads, as exemplified by patent document EP0896365}
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H01L21/76897 4 {Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors H01L29/665)}
|
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H01L21/76898 4 {formed through a semiconductor substrate}
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H01L21/77 2 Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate (electrically programmable read-only memories or multistep manufacturing processes therefor H10B69/00)
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H01L2021/775 3 {comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs}
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H01L21/78 3 with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304)
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H01L21/7806 4 {involving the separation of the active layers from a substrate}
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H01L21/7813 5 {leaving a reusable substrate, e.g. epitaxial lift off}
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H01L21/782 4 to produce devices, each consisting of a single circuit element (H01L21/82 takes precedence)
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H01L21/784 5 the substrate being a semiconductor body
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H01L21/786 5 the substrate being other than a semiconductor body, e.g. insulating body
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H01L21/82 4 to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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H01L21/8206 5 {the substrate being a semiconductor, using diamond technology (H01L21/8258 takes precedence)}
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H01L21/8213 5 {the substrate being a semiconductor, using SiC technology (H01L21/8258 takes precedence)}
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H01L21/822 5 the substrate being a semiconductor, using silicon technology (H01L21/8258 takes precedence)
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H01L21/8221 6 {Three dimensional integrated circuits stacked in different levels}
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H01L21/8222 6 Bipolar technology
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H01L21/8224 7 comprising a combination of vertical and lateral transistors
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H01L21/8226 7 comprising merged transistor logic or integrated injection logic
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H01L21/8228 7 Complementary devices, e.g. complementary transistors
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H01L21/82285 8 {Complementary vertical transistors}
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H01L21/8232 6 Field-effect technology
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H01L21/8234 7 MIS technology {, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type}
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H01L21/823406 8 {Combination of charge coupled devices, i.e. CCD, or BBD}
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H01L21/823412 8 {with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials}
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H01L21/823418 8 {with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures}
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H01L21/823425 9 {manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures}
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H01L21/823431 8 {with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L21/823437 8 {with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes}
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H01L21/823443 9 {silicided or salicided gate conductors}
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H01L21/82345 9 {gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures}
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H01L21/823456 9 {gate conductors with different shapes, lengths or dimensions}
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H01L21/823462 8 {with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants}
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H01L21/823468 8 {with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape}
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H01L21/823475 8 {interconnection or wiring or contact manufacturing related aspects}
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H01L21/823481 8 {isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure}
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H01L21/823487 8 {with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface H01L21/823431)}
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H01L21/823493 8 {with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]}
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H01L21/8236 8 Combination of enhancement and depletion transistors
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H01L21/8238 8 Complementary field-effect transistors, e.g. CMOS
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H01L21/823807 9 {with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials}
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H01L21/823814 9 {with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures}
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H01L21/823821 9 {with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L21/823828 9 {with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes}
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H01L21/823835 10 {silicided or salicided gate conductors}
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H01L21/823842 10 {gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures}
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H01L21/82385 10 {gate conductors with different shapes, lengths or dimensions}
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H01L21/823857 9 {with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants}
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H01L21/823864 9 {with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape}
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H01L21/823871 9 {interconnection or wiring or contact manufacturing related aspects}
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H01L21/823878 9 {isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure}
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H01L21/823885 9 {with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface H01L21/823821)}
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H01L21/823892 9 {with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]}
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H01L21/8248 6 Combination of bipolar and field-effect technology
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H01L21/8249 7 Bipolar and MOS technology
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H01L21/8252 5 the substrate being a semiconductor, using III-V technology (H01L21/8258 takes precedence)
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H01L21/8254 5 the substrate being a semiconductor, using II-VI technology (H01L21/8258 takes precedence)
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H01L21/8256 5 the substrate being a semiconductor, using technologies not covered by one of groups {H01L21/8206, H01L21/8213} , H01L21/822, H01L21/8252 and H01L21/8254 (H01L21/8258 takes precedence)
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H01L21/8258 5 the substrate being a semiconductor, using a combination of technologies covered by {H01L21/8206, H01L21/8213} , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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H01L21/84 5 the substrate being other than a semiconductor body, e.g. being an insulating body
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H01L21/845 6 {including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L21/86 6 the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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H01L22/00 0 {Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor}
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H01L22/10 1 {Measuring as part of the manufacturing process (burn-in G01R31/2855)}
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H01L22/12 2 {for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (electrical measurement of diffusions H01L22/14)}
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H01L22/14 2 {for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means}
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H01L22/20 1 {Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps}
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H01L22/22 2 {Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement (testing and repair of stores after manufacture including at wafer scale G11C29/00; fuses per se H01L23/525)}
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H01L22/24 2 {Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change (voltage contrast G01R31/311)}
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H01L22/26 2 {Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement (endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32)}
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H01L22/30 1 {Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements}
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H01L22/32 2 {Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors (arrangements for conducting electric current to or from the solid state body in operation H01L23/48)}
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H01L22/34 2 {Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line (switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633)}
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H01L23/00 0 Details of semiconductor or other solid state devices (H01L25/00 takes precedence {; structural arrangements for testing or measuring during manufacture or treatment, or for reliability measurements H01L22/00; arrangements for connecting or disconnecting semiconductor or solid-state bodies, or methods related thereto H01L24/00; finger print sensors G06V40/12})
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H01L23/02 1 Containers; Seals (H01L23/12, H01L23/34, H01L23/48, H01L23/552, {H01L23/66} take precedence; {for memories G11C})
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H01L23/04 2 characterised by the shape {of the container or parts, e.g. caps, walls}
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H01L23/041 3 {the container being a hollow construction having no base used as a mounting for the semiconductor body}
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H01L23/043 3 the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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H01L23/045 4 the other leads having an insulating passage through the base
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H01L23/047 4 the other leads being parallel to the base
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H01L23/049 4 the other leads being perpendicular to the base
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H01L23/051 4 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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H01L23/053 3 the container being a hollow construction and having an insulating {or insulated} base as a mounting for the semiconductor body
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H01L23/055 4 the leads having a passage through the base {(H01L23/057 takes precedence)}
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H01L23/057 4 the leads being parallel to the base
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H01L23/06 2 characterised by the material of the container or its electrical properties
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H01L23/08 3 the material being an electrical insulator, e.g. glass
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H01L23/10 2 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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H01L23/12 1 Mountings, e.g. non-detachable insulating substrates
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H01L23/13 2 characterised by the shape
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H01L23/14 2 characterised by the material or its electrical properties {(printed circuit boards H05K1/00)}
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H01L23/142 3 {Metallic substrates having insulating layers}
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H01L23/145 3 {Organic substrates, e.g. plastic}
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H01L23/147 3 {Semiconductor insulating substrates (semiconductor conductive substrates H01L23/4926)}
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H01L23/15 3 Ceramic or glass substrates {(H01L23/142, H01L23/145, H01L23/147 take precedence)}
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H01L23/16 1 Fillings or auxiliary members in containers {or encapsulations}, e.g. centering rings (H01L23/42, H01L23/552 take precedence)
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H01L23/18 2 Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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H01L23/20 3 gaseous at the normal operating temperature of the device
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H01L23/22 3 liquid at the normal operating temperature of the device
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H01L23/24 3 solid or gel at the normal operating temperature of the device {(H01L23/3135 takes precedence)}
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H01L23/26 3 including materials for absorbing or reacting with moisture or other undesired substances {, e.g. getters}
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H01L23/28 1 Encapsulations, e.g. encapsulating layers, coatings, {e.g. for protection}(H01L23/552 takes precedence; {insulating layers for contacts or interconnections H01L23/5329})
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H01L23/29 2 characterised by the material {, e.g. carbon (interlayer dielectrics H01L23/5329)}
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H01L23/291 3 {Oxides or nitrides or carbides, e.g. ceramics, glass}
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H01L23/293 3 {Organic, e.g. plastic}
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H01L23/295 4 {containing a filler (H01L23/296 takes precedence)}
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H01L23/296 4 {Organo-silicon compounds}
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H01L23/298 3 {Semiconductor material, e.g. amorphous silicon}
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H01L23/31 2 characterised by the arrangement {or shape}
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H01L23/3107 3 {the device being completely enclosed}
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H01L23/3114 4 {the device being a chip scale package, e.g. CSP}
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H01L23/3121 4 {a substrate forming part of the encapsulation}
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H01L23/3128 5 {the substrate having spherical bumps for external connection}
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H01L23/3135 4 {Double encapsulation or coating and encapsulation}
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H01L23/3142 4 {Sealing arrangements between parts, e.g. adhesion promotors}
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H01L23/315 4 {the encapsulation having a cavity}
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H01L23/3157 3 {Partial encapsulation or coating (mask layer used as insulation layer H01L21/31)}
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H01L23/3164 4 {the coating being a foil}
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H01L23/3171 4 {the coating being directly applied to the semiconductor body, e.g. passivation layer (H01L23/3178 takes precedence)}
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H01L23/3178 4 {Coating or filling in grooves made in the semiconductor body}
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H01L23/3185 4 {the coating covering also the sidewalls of the semiconductor body}
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H01L23/3192 4 {Multilayer coating}
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H01L23/32 1 Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L23/40 takes precedence)
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H01L23/34 1 Arrangements for cooling, heating, ventilating or temperature compensation {; Temperature sensing arrangements (thermal treatment apparatus H01L21/00)}
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H01L23/345 2 {Arrangements for heating (thermal treatment apparatus H01L21/00)}
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H01L23/36 2 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks {(H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345)}
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H01L23/367 3 Cooling facilitated by shape of device {(H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence)}
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H01L23/3672 4 {Foil-like cooling fins or heat sinks (being part of lead-frames H01L23/49568)}
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H01L23/3675 4 {characterised by the shape of the housing}
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H01L23/3677 4 {Wire-like or pin-like cooling fins or heat sinks}
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H01L23/373 3 Cooling facilitated by selection of materials for the device {or materials for thermal expansion adaptation, e.g. carbon}
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H01L23/3731 4 {Ceramic materials or glass (H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence)}
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H01L23/3732 4 {Diamonds}
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H01L23/3733 4 {having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures (H01L23/3732, H01L23/3737 take precedence)}
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H01L23/3735 4 {Laminates or multilayers, e.g. direct bond copper ceramic substrates}
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H01L23/3736 4 {Metallic materials (H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence)}
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H01L23/3737 4 {Organic materials with or without a thermoconductive filler}
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H01L23/3738 4 {Semiconductor materials}
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H01L23/38 2 Cooling arrangements using the Peltier effect
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H01L23/40 2 Mountings or securing means for detachable cooling or heating arrangements {(heating H01L23/345); fixed by friction, plugs or springs}
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H01L23/4006 3 {with bolts or screws}
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H01L23/4012 4 {for stacked arrangements of a plurality of semiconductor devices (assemblies per se H01L25/00)}
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H01L2023/4018 4 {characterised by the type of device to be heated or cooled}
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H01L2023/4025 5 {Base discrete devices, e.g. presspack, disc-type transistors}
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H01L2023/4031 5 {Packaged discrete devices, e.g. to-3 housings, diodes}
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H01L2023/4037 4 {characterised by thermal path or place of attachment of heatsink}
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H01L2023/4043 5 {heatsink to have chip}
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H01L2023/405 5 {heatsink to package}
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H01L2023/4056 5 {heatsink to additional heatsink}
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H01L2023/4062 5 {heatsink to or through board or cabinet}
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H01L2023/4068 5 {Heatconductors between device and heatsink, e.g. compliant heat-spreaders, heat-conducting bands}
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H01L2023/4075 4 {Mechanical elements}
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H01L2023/4081 5 {Compliant clamping elements not primarily serving heat-conduction}
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H01L2023/4087 5 {Mounting accessories, interposers, clamping or screwing parts}
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H01L23/4093 3 {Snap-on arrangements, e.g. clips}
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H01L23/42 2 Fillings or auxiliary members in containers {or encapsulations} selected or arranged to facilitate heating or cooling
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H01L23/427 3 Cooling by change of state, e.g. use of heat pipes {(by liquefied gas H01L23/445)}
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H01L23/4275 4 {by melting or evaporation of solids}
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H01L23/433 3 Auxiliary members {in containers} characterised by their shape, e.g. pistons
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H01L23/4332 4 {Bellows}
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H01L23/4334 4 {Auxiliary members in encapsulations (H01L23/49568 takes precedence)}
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H01L23/4336 4 {in combination with jet impingement}
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H01L23/4338 4 {Pistons, e.g. spring-loaded members}
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H01L23/44 2 the complete device being wholly immersed in a fluid other than air {(H01L23/427 takes precedence)}
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H01L23/445 3 {the fluid being a liquefied gas, e.g. in a cryogenic vessel}
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H01L23/46 2 involving the transfer of heat by flowing fluids (H01L23/42, H01L23/44 take precedence)
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H01L23/467 3 by flowing gases, e.g. air {(H01L23/473 takes precedence)}
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H01L23/473 3 by flowing liquids {(H01L23/4332, H01L23/4338 take precedence)}
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H01L23/4735 4 {Jet impingement (H01L23/4336 takes precedence)}
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H01L23/48 1 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor}
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H01L23/481 2 {Internal lead connections, e.g. via connections, feedthrough structures}
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H01L23/482 2 consisting of lead-in layers inseparably applied to the semiconductor body {(electrodes H01L29/40)}
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H01L23/4821 3 {Bridge structure with air gap}
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H01L23/4822 3 {Beam leads}
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H01L23/4824 3 {Pads with extended contours, e.g. grid structure, branch structure, finger structure}
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H01L23/4825 3 {for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS}
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H01L23/4827 3 {Materials}
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H01L23/4828 4 {Conductive organic material or pastes, e.g. conductive adhesives, inks}
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H01L23/485 3 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts {(H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10)}
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H01L23/4855 4 {Overhang structure}
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H01L23/488 2 consisting of soldered {or bonded} constructions {(bump connectors H01L24/01)}
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H01L23/49 3 wire-like {arrangements or pins or rods (using optical fibres H01L23/48; pins attached to insulating substrates H01L23/49811)}
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H01L23/492 3 Bases or plates {or solder therefor}
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H01L23/4922 4 {having a heterogeneous or anisotropic structure}
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H01L23/4924 4 {characterised by the materials}
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H01L23/4926 5 {the materials containing semiconductor material}
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H01L23/4928 5 {the materials containing carbon}
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H01L23/495 3 Lead-frames {or other flat leads (H01L23/498 takes precedence; lead frame interconnections between components H01L23/52)}
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H01L23/49503 4 {characterised by the die pad}
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H01L23/49506 5 {an insulative substrate being used as a diepad, e.g. ceramic, plastic (H01L23/49531 takes precedence)}
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H01L23/4951 5 {Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad}
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H01L23/49513 5 {having bonding material between chip and die pad}
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H01L23/49517 4 {Additional leads}
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H01L23/4952 5 {the additional leads being a bump or a wire}
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H01L23/49524 5 {the additional leads being a tape carrier or flat leads}
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H01L23/49527 5 {the additional leads being a multilayer}
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H01L23/49531 5 {the additional leads being a wiring board}
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H01L23/49534 4 {Multi-layer}
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H01L23/49537 4 {Plurality of lead frames mounted in one device}
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H01L23/49541 4 {Geometry of the lead-frame}
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H01L23/49544 5 {Deformation absorbing parts in the lead frame plane, e.g. meanderline shape (H01L23/49562 takes precedence)}
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H01L23/49548 5 {Cross section geometry (H01L23/49562 takes precedence)}
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H01L23/49551 6 {characterised by bent parts}
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H01L23/49555 7 {the bent parts being the outer leads}
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H01L23/49558 5 {Insulating layers on lead frames, e.g. bridging members}
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H01L23/49562 5 {for devices being provided for in H01L29/00}
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H01L23/49565 5 {Side rails of the lead frame, e.g. with perforations, sprocket holes}
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H01L23/49568 4 {specifically adapted to facilitate heat dissipation}
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H01L23/49572 4 {consisting of thin flexible metallic tape with or without a film carrier (H01L23/49503 - H01L23/49568 and H01L23/49575 - H01L23/49579 take precedence)}
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H01L23/49575 4 {Assemblies of semiconductor devices on lead frames}
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H01L23/49579 4 {characterised by the materials of the lead frames or layers thereon}
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H01L23/49582 5 {Metallic layers on lead frames}
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H01L23/49586 5 {Insulating layers on lead frames}
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H01L23/49589 4 {Capacitor integral with or on the leadframe}
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H01L23/49593 4 {Battery in combination with a leadframe}
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H01L23/49596 4 {Oscillators in combination with lead-frames}
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H01L23/498 3 Leads, {i.e. metallisations or lead-frames} on insulating substrates, {e.g. chip carriers (shape of the substrate H01L23/13)}
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H01L23/49805 4 {the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting}
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H01L23/49811 4 {Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads (H01L23/49827 takes precedence)}
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H01L23/49816 5 {Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]}
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H01L23/49822 4 {Multilayer substrates (multilayer metallisation on monolayer substrate H01L23/498)}
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H01L23/49827 4 {Via connections through the substrates, e.g. pins going through the substrate, coaxial cables (H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence)}
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H01L23/49833 4 {the chip support structure consisting of a plurality of insulating substrates}
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H01L23/49838 4 {Geometry or layout}
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H01L23/49844 5 {for devices being provided for in H01L29/00}
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H01L23/4985 4 {Flexible insulating substrates (H01L23/49572 and H01L23/49855 take precedence)}
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H01L23/49855 4 {for flat-cards, e.g. credit cards (cards per se G06K19/00)}
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H01L23/49861 4 {Lead-frames fixed on or encapsulated in insulating substrates (H01L23/4985, H01L23/49805 take precedence)}
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H01L23/49866 4 {characterised by the materials (materials of the substrates H01L23/14, of the lead-frames H01L23/49579)}
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H01L23/49872 5 {the conductive materials containing semiconductor material}
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H01L23/49877 5 {Carbon, e.g. fullerenes (superconducting fullerenes H10N60/853)}
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H01L23/49883 5 {the conductive materials containing organic materials or pastes, e.g. for thick films (for printed circuits H05K1/092)}
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H01L23/49888 5 {the conductive materials containing superconducting material}
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H01L23/49894 5 {Materials of the insulating layers or coatings}
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H01L23/50 2 for integrated circuit devices, {e.g. power bus, number of leads}(H01L23/482 - H01L23/498 take precedence)
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H01L23/52 1 Arrangements for conducting electric current within the device in operation from one component to another {, i.e. interconnections, e.g. wires, lead frames (optical interconnections G02B6/00)}
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H01L23/522 2 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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H01L23/5221 3 {Crossover interconnections}
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H01L23/5222 3 {Capacitive arrangements or effects of, or between wiring layers (other capacitive arrangements H01L23/642)}
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H01L23/5223 4 {Capacitor integral with wiring layers}
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H01L23/5225 4 {Shielding layers formed together with wiring layers}
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H01L23/5226 3 {Via connections in a multilevel interconnection structure}
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H01L23/5227 3 {Inductive arrangements or effects of, or between, wiring layers (other inductive arrangements H01L23/645)}
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H01L23/5228 3 {Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements H01L23/647)}
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H01L23/525 3 with adaptable interconnections
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H01L23/5252 4 {comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive}
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H01L23/5254 5 {the change of state resulting from the use of an external beam, e.g. laser beam or ion beam}
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H01L23/5256 4 {comprising fuses, i.e. connections having their state changed from conductive to non-conductive}
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H01L23/5258 5 {the change of state resulting from the use of an external beam, e.g. laser beam or ion beam}
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H01L23/528 3 {Geometry or} layout of the interconnection structure {(H01L27/0207 takes precedence; algorithms G06F30/00)}
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H01L23/5283 4 {Cross-sectional geometry}
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H01L23/5286 4 {Arrangements of power or ground buses}
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H01L23/532 3 characterised by the materials
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H01L23/53204 4 {Conductive materials}
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H01L23/53209 5 {based on metals, e.g. alloys, metal silicides (H01L23/53285 takes precedence)}
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H01L23/53214 6 {the principal metal being aluminium}
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H01L23/53219 7 {Aluminium alloys}
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H01L23/53223 7 {Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers}
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H01L23/53228 6 {the principal metal being copper}
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H01L23/53233 7 {Copper alloys}
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H01L23/53238 7 {Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers}
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H01L23/53242 6 {the principal metal being a noble metal, e.g. gold}
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H01L23/53247 7 {Noble-metal alloys}
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H01L23/53252 7 {Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers}
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H01L23/53257 6 {the principal metal being a refractory metal}
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H01L23/53261 7 {Refractory-metal alloys}
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H01L23/53266 7 {Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers}
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H01L23/53271 5 {containing semiconductor material, e.g. polysilicon}
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H01L23/53276 5 {containing carbon, e.g. fullerenes (superconducting fullerenes H10N60/853)}
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H01L23/5328 5 {containing conductive organic materials or pastes, e.g. conductive adhesives, inks}
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H01L23/53285 5 {containing superconducting materials}
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H01L23/5329 4 {Insulating materials}
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H01L23/53295 5 {Stacked insulating layers}
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H01L23/535 2 including internal interconnections, e.g. cross-under constructions {(internal lead connections H01L23/481)}
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H01L23/538 2 the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates ({H05K takes precedence; manufacture or treatment H01L21/4846} ; mountings per se H01L23/12; {materials H01L23/49866})
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H01L23/5381 3 {Crossover interconnections, e.g. bridge stepovers}
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H01L23/5382 3 {Adaptable interconnections, e.g. for engineering changes}
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H01L23/5383 3 {Multilayer substrates (H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538)}
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H01L23/5384 3 {Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors (H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811)}
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H01L23/5385 3 {Assembly of a plurality of insulating substrates}
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H01L23/5386 3 {Geometry or layout of the interconnection structure}
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H01L23/5387 3 {Flexible insulating substrates (H01L23/5388 takes precedence)}
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H01L23/5388 3 {for flat cards, e.g. credit cards (cards per se G06K19/00)}
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H01L23/5389 3 {the chips being integrally enclosed by the interconnect and support structures}
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H01L23/544 1 Marks applied to semiconductor devices {or parts}, e.g. registration marks, {alignment structures, wafer maps (test patterns for characterising or monitoring manufacturing processes H01L22/00)}
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H01L23/552 1 Protection against radiation, e.g. light {or electromagnetic waves}
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H01L23/556 2 against alpha rays
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H01L23/562 1 {Protection against mechanical damage (H01L23/02, H01L23/28 take precedence)}
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H01L23/564 1 {Details not otherwise provided for, e.g. protection against moisture (getters H01L23/26)}
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H01L23/57 1 {Protection from inspection, reverse engineering or tampering}
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H01L23/573 2 {using passive means}
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H01L23/576 2 {using active circuits}
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H01L23/58 1 Structural electrical arrangements for semiconductor devices not otherwise provided for {, e.g. in combination with batteries (H01L23/49593, H01L23/49596 take precedence)}
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H01L23/585 2 {comprising conductive layers or plates or strips or rods or rings (H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence)}
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H01L23/60 2 Protection against electrostatic charges or discharges, e.g. Faraday shields
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H01L23/62 2 Protection against overvoltage, e.g. fuses, shunts
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H01L23/64 2 Impedance arrangements
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H01L23/642 3 {Capacitive arrangements (H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222)}
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H01L23/645 3 {Inductive arrangements (H01L23/647, H01L23/66 take precedence)}
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H01L23/647 3 {Resistive arrangements (H01L23/66, H01L23/62 take precedence)}
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H01L23/66 3 High-frequency adaptations
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H01L24/00 0 {Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto}
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H01L24/01 1 {Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto}
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H01L24/02 2 {Bonding areas (on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389); Manufacturing methods related thereto}
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H01L24/03 3 {Manufacturing methods}
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H01L24/04 3 {Structure, shape, material or disposition of the bonding areas prior to the connecting process}
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H01L24/05 4 {of an individual bonding area}
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H01L24/06 4 {of a plurality of bonding areas}
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H01L24/07 3 {Structure, shape, material or disposition of the bonding areas after the connecting process}
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H01L24/08 4 {of an individual bonding area}
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H01L24/09 4 {of a plurality of bonding areas}
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H01L24/10 2 {Bump connectors (bumps on insulating substrates, e.g. chip carriers, H01L23/49816); Manufacturing methods related thereto}
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H01L24/11 3 {Manufacturing methods (for bumps on insulating substrates H01L21/4853)}
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H01L24/12 3 {Structure, shape, material or disposition of the bump connectors prior to the connecting process}
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H01L24/13 4 {of an individual bump connector}
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H01L24/14 4 {of a plurality of bump connectors}
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H01L24/15 3 {Structure, shape, material or disposition of the bump connectors after the connecting process}
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H01L24/16 4 {of an individual bump connector}
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H01L24/17 4 {of a plurality of bump connectors}
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H01L24/18 2 {High density interconnect [HDI] connectors; Manufacturing methods related thereto (interconnection structure between a plurality of semiconductor chips H01L23/5389)}
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H01L24/19 3 {Manufacturing methods of high density interconnect preforms}
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H01L24/20 3 {Structure, shape, material or disposition of high density interconnect preforms}
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H01L24/23 3 {Structure, shape, material or disposition of the high density interconnect connectors after the connecting process}
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H01L24/24 4 {of an individual high density interconnect connector}
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H01L24/25 4 {of a plurality of high density interconnect connectors}
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H01L24/26 2 {Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto}
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H01L24/27 3 {Manufacturing methods}
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H01L24/28 3 {Structure, shape, material or disposition of the layer connectors prior to the connecting process}
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H01L24/29 4 {of an individual layer connector}
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H01L24/30 4 {of a plurality of layer connectors}
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H01L24/31 3 {Structure, shape, material or disposition of the layer connectors after the connecting process}
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H01L24/32 4 {of an individual layer connector}
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H01L24/33 4 {of a plurality of layer connectors}
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H01L24/34 2 {Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto}
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H01L24/35 3 {Manufacturing methods}
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H01L24/36 3 {Structure, shape, material or disposition of the strap connectors prior to the connecting process}
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H01L24/37 4 {of an individual strap connector}
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H01L24/38 4 {of a plurality of strap connectors}
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H01L24/39 3 {Structure, shape, material or disposition of the strap connectors after the connecting process}
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H01L24/40 4 {of an individual strap connector}
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H01L24/41 4 {of a plurality of strap connectors}
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H01L24/42 2 {Wire connectors; Manufacturing methods related thereto}
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H01L24/43 3 {Manufacturing methods}
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H01L24/44 3 {Structure, shape, material or disposition of the wire connectors prior to the connecting process}
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H01L24/45 4 {of an individual wire connector}
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H01L24/46 4 {of a plurality of wire connectors}
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H01L24/47 3 {Structure, shape, material or disposition of the wire connectors after the connecting process}
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H01L24/48 4 {of an individual wire connector}
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H01L24/49 4 {of a plurality of wire connectors}
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H01L24/50 2 {Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto (thin flexible metallic tape with or without a film carrier H01L23/49572, flexible insulating substrates H01L23/4985, H01L23/5387)}
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H01L24/63 2 {Connectors not provided for in any of the groups H01L24/10 - H01L24/50 and subgroups; Manufacturing methods related thereto}
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H01L24/64 3 {Manufacturing methods}
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H01L24/65 3 {Structure, shape, material or disposition of the connectors prior to the connecting process}
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H01L24/66 4 {of an individual connector}
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H01L24/68 3 {Structure, shape, material or disposition of the connectors after the connecting process}
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H01L24/69 4 {of an individual connector}
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H01L24/70 4 {of a plurality of connectors}
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H01L24/71 1 {Means for bonding not being attached to, or not being formed on, the surface to be connected (holders for supporting the complete device in operation H01L23/32)}
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H01L24/72 2 {Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips}
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H01L24/73 1 {Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71}
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H01L24/74 1 {Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies}
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H01L24/741 2 {Apparatus for manufacturing means for bonding, e.g. connectors}
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H01L24/742 3 {Apparatus for manufacturing bump connectors}
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H01L24/743 3 {Apparatus for manufacturing layer connectors}
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H01L24/744 3 {Apparatus for manufacturing strap connectors}
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H01L24/745 3 {Apparatus for manufacturing wire connectors}
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H01L24/75 2 {Apparatus for connecting with bump connectors or layer connectors}
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H01L24/76 2 {Apparatus for connecting with build-up interconnects}
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H01L24/77 2 {Apparatus for connecting with strap connectors}
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H01L24/78 2 {Apparatus for connecting with wire connectors}
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H01L24/79 2 {Apparatus for Tape Automated Bonding [TAB]}
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H01L24/799 2 {Apparatus for disconnecting}
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H01L24/80 1 {Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected}
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H01L24/81 2 {using a bump connector}
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H01L24/82 2 {by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] (interconnection structure between a plurality of semiconductor chips H01L23/5389)}
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H01L24/85 2 {using a wire connector (wire bonding in general B23K20/004)}
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H01L24/86 2 {using tape automated bonding [TAB]}
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H01L24/89 2 {using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86}
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H01L24/90 1 {Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips}
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H01L24/91 1 {Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90}
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H01L24/92 2 {Specific sequence of method steps}
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H01L24/93 1 {Batch processes}
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H01L24/94 2 {at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices}
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H01L24/95 2 {at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips}
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H01L24/96 3 {the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting}
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H01L24/97 3 {the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting}
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H01L24/98 1 {Methods for disconnecting semiconductor or solid-state bodies}
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H01L25/00 0 Assemblies consisting of a plurality of individual semiconductor or other solid state devices {; Multistep manufacturing processes thereof}(devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00; photovoltaic modules or arrays of photovoltaic cells H01L31/042 {; panels or arrays of photo electrochemical cells H01G9/2068})
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H01L25/03 1 all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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H01L25/04 2 the devices not having separate containers
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H01L25/042 4 {the devices being arranged next to each other (solar cells H01L31/042)}
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H01L25/065 3 the devices being of a type provided for in group H01L27/00
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H01L25/0652 4 {the devices being arranged next and on each other, i.e. mixed assemblies}
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H01L25/07 3 the devices being of a type provided for in group H01L29/00
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H01L25/071 4 {the devices being arranged next and on each other, i.e. mixed assemblies}
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H01L25/073 4 {Apertured devices mounted on one or more rods passed through the apertures}
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H01L25/074 4 {Stacked arrangements of non-apertured devices}
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H01L25/075 3 the devices being of a type provided for in group H01L33/00
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H01L25/0753 4 {the devices being arranged next to each other}
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H01L25/10 2 the devices having separate containers
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H01L25/105 3 {the devices being of a type provided for in group H01L27/00}
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H01L25/11 3 the devices being of a type provided for in group H01L29/00
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H01L25/112 4 {Mixed assemblies}
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H01L25/115 4 {the devices being arranged next to each other}
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H01L25/13 3 the devices being of a type provided for in group H01L33/00
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H01L25/16 1 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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H01L25/162 2 {the devices being mounted on two or more different substrates}
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H01L25/165 2 {Containers}
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H01L25/167 2 {comprising optoelectronic devices, e.g. LED, photodiodes}
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H01L25/18 1 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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H01L25/50 1 {Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 (H01L21/50 takes precedence)}
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H01L27/00 0 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L23/00, H01L29/00 - H10K10/00; assemblies consisting of a plurality of individual solid state devices H01L25/00)
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H01L27/01 1 comprising only passive thin-film or thick-film elements formed on a common insulating substrate {(passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L28/00)}
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H01L27/013 2 {Thick-film circuits}
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H01L27/016 2 {Thin-film circuits}
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H01L27/02 1 including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
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H01L27/0203 2 {Particular design considerations for integrated circuits}
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H01L27/0207 3 {Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique}
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H01L27/0211 4 {adapted for requirements of temperature}
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H01L27/0214 3 {for internal polarisation, e.g. I2L}
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H01L27/0218 4 {of field effect structures}
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H01L27/0222 5 {Charge pumping, substrate bias generation structures}
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H01L27/0225 5 {Charge injection in static induction transistor logic structures [SITL]}
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H01L27/0229 4 {of bipolar structures}
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H01L27/0233 5 {Integrated injection logic structures [I2L]}
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H01L27/0237 6 {using vertical injector structures}
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H01L27/024 6 {using field effect injector structures}
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H01L27/0244 6 {I2L structures integrated in combination with analog structures}
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H01L27/0248 3 {for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection}
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H01L27/0251 4 {for MOS devices}
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H01L27/0255 5 {using diodes as protective elements}
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H01L27/0259 5 {using bipolar transistors as protective elements}
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H01L27/0262 6 {including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices}
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H01L27/0266 5 {using field effect transistors as protective elements}
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H01L27/027 6 {specially adapted to provide an electrical current path other than the field effect induced current path}
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H01L27/0274 7 {involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor, e.g. gate coupled transistors}
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H01L27/0277 7 {involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor}
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H01L27/0281 6 {field effect transistors in a "Darlington-like" configuration}
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H01L27/0285 6 {bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits (H01L27/0281 takes precedence)}
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H01L27/0288 5 {using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps}
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H01L27/0292 5 {using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses}
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H01L27/0296 5 {involving a specific disposition of the protective devices}
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H01L27/04 2 the substrate being a semiconductor body
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H01L27/06 3 including a plurality of individual components in a non-repetitive configuration
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H01L27/0605 4 {integrated circuits made of compound material, e.g. AIIIBV}
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H01L27/0611 4 {integrated circuits having a two-dimensional layout of components without a common active region}
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H01L27/0617 5 {comprising components of the field-effect type (H01L27/0251 takes precedence)}
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H01L27/0623 6 {in combination with bipolar transistors}
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H01L27/0629 6 {in combination with diodes, or resistors, or capacitors}
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H01L27/0635 6 {in combination with bipolar transistors and diodes, or resistors, or capacitors}
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H01L27/0641 5 {without components of the field effect type}
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H01L27/0647 6 {Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor}
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H01L27/0652 7 {Vertical bipolar transistor in combination with diodes, or capacitors, or resistors}
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H01L27/0658 8 {Vertical bipolar transistor in combination with resistors or capacitors}
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H01L27/0664 8 {Vertical bipolar transistor in combination with diodes}
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H01L27/067 7 {Lateral bipolar transistor in combination with diodes, or capacitors, or resistors}
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H01L27/0676 6 {comprising combinations of diodes, or capacitors or resistors}
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H01L27/0682 7 {comprising combinations of capacitors and resistors}
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H01L27/0688 4 {Integrated circuits having a three-dimensional layout}
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H01L27/0694 5 {comprising components formed on opposite sides of a semiconductor substrate}
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H01L27/07 4 the components having an active region in common
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H01L27/0705 5 {comprising components of the field effect type}
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H01L27/0711 6 {in combination with bipolar transistors and diodes, or capacitors, or resistors}
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H01L27/0716 7 {in combination with vertical bipolar transistors and diodes, or capacitors, or resistors}
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H01L27/0722 7 {in combination with lateral bipolar transistors and diodes, or capacitors, or resistors}
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H01L27/0727 6 {in combination with diodes, or capacitors or resistors}
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H01L27/0733 7 {in combination with capacitors only}
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H01L27/0738 7 {in combination with resistors only}
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H01L27/0744 5 {without components of the field effect type}
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H01L27/075 6 {Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor}
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H01L27/0755 7 {Vertical bipolar transistor in combination with diodes, or capacitors, or resistors}
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H01L27/0761 8 {Vertical bipolar transistor in combination with diodes only}
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H01L27/0766 9 {with Schottky diodes only}
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H01L27/0772 8 {Vertical bipolar transistor in combination with resistors only}
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H01L27/0777 8 {Vertical bipolar transistor in combination with capacitors only}
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H01L27/0783 7 {Lateral bipolar transistors in combination with diodes, or capacitors, or resistors}
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H01L27/0788 6 {comprising combinations of diodes or capacitors or resistors}
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H01L27/0794 7 {Combinations of capacitors and resistors}
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H01L27/08 3 including only semiconductor components of a single kind
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H01L27/0802 4 {Resistors only}
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H01L27/0805 4 {Capacitors only}
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H01L27/0808 5 {Varactor diodes}
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H01L27/0811 5 {MIS diodes}
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H01L27/0814 4 {Diodes only}
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H01L27/0817 4 {Thyristors only}
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H01L27/082 4 including bipolar components only
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H01L27/0821 5 {Combination of lateral and vertical transistors only}
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H01L27/0823 5 {including vertical bipolar transistors only}
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H01L27/0825 6 {Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)}
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H01L27/0826 6 {Combination of vertical complementary transistors}
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H01L27/0828 6 {Combination of direct and inverse vertical transistors}
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H01L27/085 4 including field-effect components only
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H01L27/088 5 the components being field-effect transistors with insulated gate
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H01L27/0883 6 {Combination of depletion and enhancement field effect transistors}
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H01L27/0886 6 {including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L27/092 6 complementary MIS field-effect transistors
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H01L27/0921 7 {Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention}
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H01L27/0922 7 {Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS}
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H01L27/0924 7 {including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L27/0925 7 {comprising an N-well only in the substrate}
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H01L27/0927 7 {comprising a P-well only in the substrate}
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H01L27/0928 7 {comprising both N- and P- wells in the substrate, e.g. twin-tub}
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H01L27/095 5 the components being Schottky barrier gate field-effect transistors
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H01L27/098 5 the components being PN junction gate field-effect transistors
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H01L27/10 3 including a plurality of individual components in a repetitive configuration
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H01L27/101 4 {including resistors or capacitors only}
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H01L27/102 4 including bipolar components
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H01L27/1021 5 {including diodes only}
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H01L27/1022 5 {including bipolar transistors}
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H01L27/1027 5 {Thyristors}
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H01L27/1028 5 {Double base diodes}
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H01L27/105 4 including field-effect components
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H01L27/1055 5 {comprising charge coupled devices of the so-called bucket brigade type}
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H01L27/1057 5 {comprising charge coupled devices [CCD] or charge injection devices [CID]}
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H01L27/118 4 Masterslice integrated circuits
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H01L27/11801 5 {using bipolar technology}
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H01L27/11803 5 {using field effect technology}
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H01L2027/11805 6 {A3B5 or A3B6 gate arrays}
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H01L27/11807 6 {CMOS gate arrays}
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H01L2027/11809 7 {Microarchitecture}
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H01L2027/11811 8 {Basic cell P to N transistor count}
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H01L2027/11812 9 {4-T CMOS basic cell}
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H01L2027/11814 9 {5-T CMOS basic cell}
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H01L2027/11816 9 {6-T CMOS basic cell}
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H01L2027/11818 9 {7-T CMOS basic cell}
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H01L2027/1182 9 {8-T CMOS basic cell}
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H01L2027/11822 8 {relative P to N transistor sizes}
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H01L2027/11824 9 {for current drive capability}
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H01L2027/11825 9 {for delay time adaptation}
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H01L2027/11827 9 {for capacitive loading}
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H01L2027/11829 8 {Isolation techniques}
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H01L2027/11831 9 {FET isolation}
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H01L2027/11833 9 {LOCOS}
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H01L2027/11835 8 {Degree of specialisation for implementing specific functions}
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H01L2027/11837 9 {Implementation of digital circuits}
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H01L2027/11838 10 {Implementation of memory functions}
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H01L2027/1184 9 {Implementation of analog circuits}
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H01L2027/11842 10 {Resistors and capacitors}
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H01L2027/11844 9 {Hybrid analog or digital}
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H01L2027/11846 9 {Embedded IO cells}
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H01L2027/11848 9 {Transmission gate}
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H01L2027/1185 9 {Porous cells, i.e. pass-through elements}
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H01L2027/11851 8 {Technology used, i.e. design rules}
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H01L2027/11853 9 {Sub-micron technology}
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H01L2027/11855 9 {Twin-tub technology}
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H01L2027/11857 9 {SOS, SOI technology}
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H01L2027/11859 8 {Connectibility characteristics, i.e. diffusion and polysilicon geometries}
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H01L2027/11861 9 {Substrate and well contacts}
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H01L2027/11862 9 {Horizontal or vertical grid line density}
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H01L2027/11864 9 {Yield or reliability}
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H01L2027/11866 9 {Gate electrode terminals or contacts}
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H01L2027/11868 7 {Macro-architecture}
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H01L2027/1187 8 {Number of core or basic cells in the macro (RAM, ROM)}
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H01L2027/11872 8 {Distribution function, e.g. Sea of Gates}
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H01L2027/11874 8 {Layout specification, i.e. inner core region}
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H01L2027/11875 9 {Wiring region, routing}
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H01L2027/11877 9 {Avoiding clock-skew or clock-delay}
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H01L2027/11879 9 {Data lines (buses)}
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H01L2027/11881 9 {Power supply lines}
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H01L2027/11883 7 {Levels of metallisation}
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H01L2027/11885 8 {Two levels of metal}
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H01L2027/11887 8 {Three levels of metal}
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H01L2027/11888 8 {More than 3 levels of metal}
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H01L2027/1189 7 {Latch-up prevention}
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H01L2027/11892 7 {Noise prevention (crosstalk)}
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H01L2027/11894 7 {Radiation hardened circuits}
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H01L27/11896 5 {using combined field effect/bipolar technology}
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H01L27/11898 5 {Input and output buffer/driver structures}
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H01L27/12 2 the substrate being other than a semiconductor body, e.g. an insulating body
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H01L27/1203 3 {the substrate comprising an insulating body on a semiconductor body, e.g. SOI (three-dimensional layout H01L27/0688)}
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H01L27/1207 4 {combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits}
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H01L27/1211 4 {combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L27/1214 3 {comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs}
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H01L27/1218 4 {with a particular composition or structure of the substrate}
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H01L27/1222 4 {with a particular composition, shape or crystalline structure of the active layer}
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H01L27/1225 5 {with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO}
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H01L27/1229 5 {with different crystal properties within a device or between different devices}
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H01L27/1233 5 {with different thicknesses of the active layer in different devices}
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H01L27/1237 4 {with a different composition, shape, layout or thickness of the gate insulator in different devices}
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H01L27/124 4 {with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits (wiring structures per se H01L23/52)}
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H01L27/1244 5 {for preventing breakage, peeling or short circuiting}
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H01L27/1248 4 {with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement}
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H01L27/1251 4 {comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs}
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H01L27/1255 4 {integrated with passive devices, e.g. auxiliary capacitors}
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H01L27/1259 4 {Multistep manufacturing methods}
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H01L27/1262 5 {with a particular formation, treatment or coating of the substrate}
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H01L27/1266 6 {the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate}
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H01L27/127 5 {with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement}
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H01L27/1274 6 {using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor}
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H01L27/1277 7 {using a crystallisation promoting species, e.g. local introduction of Ni catalyst}
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H01L27/1281 7 {by using structural features to control crystal growth, e.g. placement of grain filters}
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H01L27/1285 7 {using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors}
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H01L27/1288 5 {employing particular masking sequences or specially adapted masks, e.g. half-tone mask}
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H01L27/1292 5 {using liquid deposition, e.g. printing}
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H01L27/1296 5 {adapted to increase the uniformity of device parameters}
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H01L27/13 3 combined with thin-film or thick-film passive components
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H01L27/14 1 including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L31/14; couplings of light guides with optoelectronic elements G02B6/42)
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H01L27/142 2 Energy conversion devices (photovoltaic modules or arrays of single photovoltaic cells comprising bypass diodes integrated or directly associated with the devices H01L31/0443; photovoltaic modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046)
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H01L27/1421 3 {comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell}
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H01L27/144 2 Devices controlled by radiation
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H01L27/1443 3 {with at least one potential jump or surface barrier}
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H01L27/1446 3 {in a repetitive configuration}
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H01L27/146 3 Imager structures
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H01L27/14601 4 {Structural or functional details thereof}
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H01L27/14603 5 {Special geometry or disposition of pixel-elements, address-lines or gate-electrodes}
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H01L27/14605 6 {Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery}
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H01L27/14607 6 {Geometry of the photosensitive area}
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H01L27/14609 5 {Pixel-elements with integrated switching, control, storage or amplification elements (scanning details of imagers H04N3/15; circuitry of imagers H04N25/70)}
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H01L27/1461 6 {characterised by the photosensitive area}
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H01L27/14612 6 {involving a transistor}
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H01L27/14614 7 {having a special gate structure}
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H01L27/14616 7 {characterised by the channel of the transistor, e.g. channel having a doping gradient}
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H01L27/14618 5 {Containers}
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H01L27/1462 5 {Coatings}
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H01L27/14621 6 {Colour filter arrangements}
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H01L27/14623 6 {Optical shielding}
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H01L27/14625 5 {Optical elements or arrangements associated with the device}
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H01L27/14627 6 {Microlenses}
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H01L27/14629 6 {Reflectors}
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H01L27/1463 5 {Pixel isolation structures}
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H01L27/14632 5 {Wafer-level processed structures}
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H01L27/14634 5 {Assemblies, i.e. Hybrid structures}
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H01L27/14636 5 {Interconnect structures}
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H01L27/14638 5 {Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane}
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H01L27/1464 5 {Back illuminated imager structures}
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H01L27/14641 5 {Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements}
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H01L27/14643 4 {Photodiode arrays; MOS imagers}
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H01L27/14645 5 {Colour imagers}
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H01L27/14647 6 {Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements}
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H01L27/14649 5 {Infra-red imagers}
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H01L27/1465 6 {of the hybrid type}
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H01L27/14652 6 {Multispectral infra-red imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures}
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H01L27/14654 5 {Blooming suppression}
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H01L27/14656 6 {Overflow drain structures}
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H01L27/14658 5 {X-ray, gamma-ray or corpuscular radiation imagers (measuring X-, gamma- or corpuscular radiation G01T1/00)}
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H01L27/14659 6 {Direct radiation imagers structures}
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H01L27/14661 6 {of the hybrid type}
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H01L27/14663 6 {Indirect radiation imagers, e.g. using luminescent members}
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H01L27/14665 4 {Imagers using a photoconductor layer}
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H01L27/14667 5 {Colour imagers}
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H01L27/14669 5 {Infra-red imagers}
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H01L27/1467 6 {of the hybrid type}
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H01L27/14672 5 {Blooming suppression}
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H01L27/14674 6 {Overflow drain structures}
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H01L27/14676 5 {X-ray, gamma-ray or corpuscular radiation imagers (measuring X-, gamma- or corpuscular radiation G01T1/00)}
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H01L27/14678 4 {Contact-type imagers}
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H01L27/14679 4 {Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers}
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H01L27/14681 4 {Bipolar transistor imagers}
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H01L27/14683 4 {Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof (not peculiar thereto H01L21/00)}
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H01L27/14685 5 {Process for coatings or optical elements}
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H01L27/14687 5 {Wafer level processing}
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H01L27/14689 5 {MOS based technologies}
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H01L27/1469 5 {Assemblies, i.e. hybrid integration}
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H01L27/14692 5 {Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon}
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H01L27/14694 5 {The active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
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H01L27/14696 5 {The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}
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H01L27/14698 5 {Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation}
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H01L27/148 4 Charge coupled imagers {(individual charge coupled devices H01L29/765)}
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H01L27/14806 5 {Structural or functional details thereof}
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H01L27/14812 6 {Special geometry or disposition of pixel-elements, address lines or gate-electrodes}
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H01L27/14818 7 {Optical shielding}
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H01L27/14825 5 {Linear CCD imagers}
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H01L27/14831 5 {Area CCD imagers}
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H01L27/14837 6 {Frame-interline transfer}
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H01L27/14843 6 {Interline transfer}
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H01L27/1485 6 {Frame transfer}
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H01L27/14856 6 {Time-delay and integration}
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H01L27/14862 5 {CID imagers}
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H01L27/14868 5 {CCD or CID colour imagers}
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H01L27/14875 5 {Infra-red CCD or CID imagers}
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H01L27/14881 6 {of the hybrid type}
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H01L27/14887 5 {Blooming suppression}
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H01L27/14893 5 {comprising a photoconductive layer deposited on the CCD structure}
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H01L27/15 1 including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission {(monolithically integrated components including semiconductor laser components H01S5/026)}
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H01L27/153 2 {in a repetitive configuration, e.g. LED bars}
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H01L27/156 3 {two-dimensional arrays}
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H01L28/00 0 {Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor (testing or measuring during manufacture H01L22/00; integration methods H01L21/70; integrated circuits H01L27/00; two-terminal components with a potential-jump or surface barrier H01L29/00; resistors in general H01C; inductors in general H01F; capacitors in general H01G)}
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H01L28/10 1 {Inductors}
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H01L28/20 1 {Resistors}
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H01L28/22 2 {with an active material comprising carbon, e.g. diamond or diamond-like carbon [DLC]}
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H01L28/24 2 {with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides}
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H01L28/26 2 {with an active material comprising an organic conducting material, e.g. conducting polymers}
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H01L28/40 1 {Capacitors}
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H01L28/55 2 {with a dielectric comprising a perovskite structure material}
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H01L28/56 3 {the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers}
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H01L28/57 3 {comprising a barrier layer to prevent diffusion of hydrogen or oxygen}
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H01L28/60 2 {Electrodes}
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H01L28/65 3 {comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)}
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H01L28/75 3 {comprising two or more layers, e.g. comprising a barrier layer and a metal layer}
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H01L28/82 3 {with an enlarged surface, e.g. formed by texturisation}
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H01L28/84 4 {being a rough surface, e.g. using hemispherical grains}
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H01L28/86 4 {having horizontal extensions}
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H01L28/87 5 {made by depositing layers, e.g. by depositing alternating conductive and insulating layers}
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H01L28/88 5 {made by patterning layers, e.g. by etching conductive layers}
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H01L28/90 4 {having vertical extensions}
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H01L28/91 5 {made by depositing layers, e.g. by depositing alternating conductive and insulating layers}
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H01L28/92 5 {made by patterning layers, e.g. by etching conductive layers}
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H01L29/00 0 Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof {; Multistep manufacturing processes therefor}(H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00 {; passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L28/00 resistors in general H01C; capacitors in general H01G, e.g. ceramic barrier-layer capacitors H01G4/1272})
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H01L29/02 1 Semiconductor bodies {; Multistep manufacturing processes therefor}
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H01L29/04 2 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes (characterised by physical imperfections H01L29/30)
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H01L29/045 3 {by their particular orientation of crystalline planes}
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H01L29/06 2 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions {; characterised by the concentration or distribution of impurities within semiconductor regions}
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H01L29/0603 3 {characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions (isolation regions between components H01L21/76; design considerations for integrated circuits H01L27/00; geometrical design considerations for devices H01L29/0657)}
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H01L29/0607 4 {for preventing surface leakage or controlling electric field concentration}
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H01L29/0611 5 {for increasing or controlling the breakdown voltage of reverse biased devices (H01L29/0661 takes precedence)}
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H01L29/0615 6 {by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] (LDD or drain offset regions H01L29/7833)}
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H01L29/0619 7 {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
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H01L29/0623 8 {Buried supplementary region, e.g. buried guard ring (multi-RESURF H01L29/0634)}
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H01L29/0626 7 {with a localised breakdown region, e.g. built-in avalanching region (in self-protected thyristors H01L29/7424)}
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H01L29/063 7 {Reduced surface field [RESURF] pn-junction structures}
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H01L29/0634 8 {Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures}
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H01L29/0638 5 {for preventing surface leakage due to surface inversion layer, e.g. with channel stopper (channel stoppers in combination with isolation region for integrated circuits H01L21/762)}
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H01L29/0642 4 {Isolation within the component, i.e. internal isolation}
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H01L29/0646 5 {PN junctions}
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H01L29/0649 5 {Dielectric regions, e.g. SiO2 regions, air gaps}
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H01L29/0653 6 {adjoining the input or output region of a field-effect device, e.g. the source or drain region}
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H01L29/0657 3 {characterised by the shape of the body}
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H01L29/0661 4 {specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching}
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H01L29/0665 4 {the shape of the body defining a nanostructure (nanotechnology per se B82B)}
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H01L29/0669 5 {Nanowires or nanotubes (carbon nanotubes as material of solid-state device active part H10K85/211)}
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H01L29/0673 6 {oriented parallel to a substrate}
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H01L29/0676 6 {oriented perpendicular or at an angle to a substrate}
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H01L29/068 6 {comprising a junction}
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H01L29/0684 3 {characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions}
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H01L29/0688 4 {characterised by the particular shape of a junction between semiconductor regions}
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H01L29/0692 4 {Surface layout}
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H01L29/0696 5 {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
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H01L29/08 3 with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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H01L29/0804 4 {Emitter regions of bipolar transistors}
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H01L29/0808 5 {of lateral transistors}
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H01L29/0813 5 {Non-interconnected multi-emitter structures}
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H01L29/0817 5 {of heterojunction bipolar transistors (H01L29/7375 takes precedence)}
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H01L29/0821 4 {Collector regions of bipolar transistors}
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H01L29/0826 5 {Pedestal collectors}
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H01L29/083 4 {Anode or cathode regions of thyristors or gated bipolar-mode devices}
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H01L29/0834 5 {Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions}
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H01L29/0839 5 {Cathode regions of thyristors}
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H01L29/0843 4 {Source or drain regions of field-effect devices}
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H01L29/0847 5 {of field-effect transistors with insulated gate (H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618)}
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H01L29/0852 6 {of DMOS transistors}
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H01L29/0856 7 {Source regions}
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H01L29/086 8 {Impurity concentration or distribution}
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H01L29/0865 8 {Disposition}
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H01L29/0869 8 {Shape (cell layout H01L29/0696)}
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H01L29/0873 7 {Drain regions}
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H01L29/0878 8 {Impurity concentration or distribution}
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H01L29/0882 8 {Disposition}
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H01L29/0886 8 {Shape}
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H01L29/0891 5 {of field-effect transistors with Schottky gate}
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H01L29/0895 4 {Tunnel injectors}
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H01L29/10 3 with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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H01L29/1004 4 {Base region of bipolar transistors}
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H01L29/1008 5 {of lateral transistors}
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H01L29/1012 4 {Base regions of thyristors (H01L29/083 takes precedence)}
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H01L29/1016 5 {Anode base regions of thyristors}
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H01L29/102 5 {Cathode base regions of thyristors}
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H01L29/1025 4 {Channel region of field-effect devices}
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H01L29/1029 5 {of field-effect transistors}
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H01L29/1033 6 {with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure (with channel and gate aligned in the lengthwise direction H01L29/42376; with buried channel H01L29/7838)}
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H01L29/1037 7 {and non-planar channel (resulting from the gate electrode disposition, e.g. within a trench, H01L29/42356)}
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H01L29/1041 7 {with a non-uniform doping structure in the channel region surface}
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H01L29/1045 8 {the doping structure being parallel to the channel length, e.g. DMOS like}
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H01L29/105 7 {with vertical doping variation (H01L29/7827 takes precedence)}
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H01L29/1054 7 {with a variation of the composition, e.g. channel with strained layer for increasing the mobility}
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H01L29/1058 6 {with PN junction gate}
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H01L29/1062 5 {of charge coupled devices}
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H01L29/1066 4 {Gate region of field-effect devices with PN junction gate}
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H01L29/107 4 {Substrate region of field-effect devices}
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H01L29/1075 5 {of field-effect transistors}
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H01L29/1079 6 {with insulated gate}
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H01L29/1083 7 {with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current}
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H01L29/1087 7 {characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect}
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H01L29/1091 5 {of charge coupled devices}
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H01L29/1095 4 {Body region, i.e. base region, of DMOS transistors or IGBTs (cell layout H01L29/0696)}
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H01L29/12 2 characterised by the materials of which they are formed
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H01L29/122 3 {Single quantum well structures (single heterojunctions, couples of materials H01L29/165, H01L29/205, H01L29/225, H01L29/267)}
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H01L29/125 4 {Quantum wire structures}
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H01L29/127 4 {Quantum box structures}
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H01L29/15 3 Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices (such structures applied for the control of light G02F1/017, applied in semiconductor lasers H01S5/34)
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H01L29/151 4 {Compositional structures (H01L29/157 and H01L29/158 take precedence)}
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H01L29/152 5 {with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation}
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H01L29/154 6 {comprising at least one long range structurally disordered material, e.g. one-dimensional vertical amorphous superlattices}
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H01L29/155 6 {Comprising only semiconductor materials (H01L29/154 takes precedence)}
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H01L29/157 4 {Doping structures, e.g. doping superlattices, nipi superlattices (delta doping in general H01L29/365)}
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H01L29/158 4 {Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]}
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H01L29/16 3 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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H01L29/1602 4 {Diamond}
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H01L29/1604 4 {Amorphous materials}
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H01L29/1606 4 {Graphene}
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H01L29/1608 4 {Silicon carbide}
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H01L29/161 4 including two or more of the elements provided for in group H01L29/16 {, e.g. alloys (H01L29/1604 takes precedence)}
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H01L29/165 5 in different semiconductor regions {, e.g. heterojunctions}
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H01L29/167 4 further characterised by the doping material {(H01L29/1604 takes precedence)}
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H01L29/18 3 Selenium or tellurium only, apart from doping materials or other impurities
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H01L29/185 4 {Amorphous materials}
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H01L29/20 3 including, apart from doping materials or other impurities, only AIIIBV compounds
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H01L29/2003 4 {Nitride compounds}
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H01L29/2006 4 {Amorphous materials}
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H01L29/201 4 including two or more compounds {, e.g. alloys (H01L29/2006 takes precedence)}
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H01L29/205 5 in different semiconductor regions {, e.g. heterojunctions}
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H01L29/207 4 further characterised by the doping material {(H01L29/2006 takes precedence)}
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H01L29/22 3 including, apart from doping materials or other impurities, only AIIBVI compounds
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H01L29/2203 4 {Cd X compounds being one element of the 6th group of the Periodic System (H01L29/2206 takes precedence)}
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H01L29/2206 4 {Amorphous materials}
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H01L29/221 4 including two or more compounds {, e.g. alloys (H01L29/2206 takes precedence)}
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H01L29/225 5 in different semiconductor regions {, e.g. heterojunctions}
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H01L29/227 4 further characterised by the doping material {(H01L29/2206 takes precedence)}
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H01L29/24 3 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 (including organic materials H10K99/00)
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H01L29/242 4 {AIBVI or AIBVII compounds, e.g. Cu2O, Cu I (H01L29/247 takes precedence)}
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H01L29/245 4 {Pb compounds, e.g. PbO (H01L29/247 takes precedence)}
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H01L29/247 4 {Amorphous materials}
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H01L29/26 3 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 {, e.g. alloys}
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H01L29/263 4 {Amorphous materials}
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H01L29/267 4 in different semiconductor regions {, e.g. heterojunctions (H01L29/263 takes precedence)}
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H01L29/30 2 characterised by physical imperfections; having polished or roughened surface
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H01L29/32 3 the imperfections being within the semiconductor body
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H01L29/34 3 the imperfections being on the surface
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H01L29/36 2 characterised by the concentration or distribution of impurities {in the bulk material (within semiconductor regions H01L29/06)}
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H01L29/365 3 {Planar doping, e.g. atomic-plane doping, delta-doping}
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H01L29/40 1 Electrodes {; Multistep manufacturing processes therefor}
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H01L29/401 2 {Multistep manufacturing processes}
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H01L29/4011 3 {for data storage electrodes}
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H01L29/40111 4 {the electrodes comprising a layer which is used for its ferroelectric properties}
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H01L29/40114 4 {the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure}
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H01L29/40117 4 {the electrodes comprising a charge-trapping insulator}
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H01L29/402 2 {Field plates}
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H01L29/404 3 {Multiple field plate structures}
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H01L29/405 3 {Resistive arrangements, e.g. resistive or semi-insulating field plates}
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H01L29/407 3 {Recessed field plates, e.g. trench field plates, buried field plates}
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H01L29/408 2 {with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface}
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H01L29/41 2 characterised by their shape, relative sizes or dispositions
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H01L29/413 3 {Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires (nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B)}
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H01L29/417 3 carrying the current to be rectified, amplified or switched
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H01L29/41708 4 {Emitter or collector electrodes for bipolar transistors}
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H01L29/41716 4 {Cathode or anode electrodes for thyristors}
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H01L29/41725 4 {Source or drain electrodes for field effect devices (with monocrystalline semiconductor on source/drain region H01L29/0843)}
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H01L29/41733 5 {for thin film transistors with insulated gate}
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H01L29/41741 5 {for vertical or pseudo-vertical devices}
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H01L29/4175 5 {for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole}
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H01L29/41758 5 {for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular (H01L29/41733 - H01L29/4175 take precedence)}
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H01L29/41766 5 {with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor (H01L29/41733 - H01L29/41758 take precedence)}
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H01L29/41775 5 {characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode}
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H01L29/41783 6 {Raised source or drain electrodes self aligned with the gate}
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H01L29/41791 5 {for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET}
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H01L29/423 3 not carrying the current to be rectified, amplified or switched
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H01L29/42304 4 {Base electrodes for bipolar transistors}
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H01L29/42308 4 {Gate electrodes for thyristors}
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H01L29/42312 4 {Gate electrodes for field effect devices}
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H01L29/42316 5 {for field-effect transistors}
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H01L29/4232 6 {with insulated gate}
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H01L29/42324 7 {Gate electrodes for transistors with a floating gate}
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H01L29/42328 8 {with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate}
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H01L29/42332 8 {with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate}
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H01L29/42336 8 {with one gate at least partly formed in a trench}
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H01L29/4234 7 {Gate electrodes for transistors with charge trapping gate insulator}
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H01L29/42344 8 {with at least one additional gate, e.g. program gate, erase gate or select gate}
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H01L29/42348 8 {with trapping site formed by at least two separated sites, e.g. multi-particles trapping site}
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H01L29/42352 8 {with the gate at least partly formed in a trench}
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H01L29/42356 7 {Disposition, e.g. buried gate electrode (H01L29/42324 and H01L29/4234 take precedence)}
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H01L29/4236 8 {within a trench, e.g. trench gate electrode, groove gate electrode}
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H01L29/42364 7 {characterised by the insulating layer, e.g. thickness or uniformity (H01L29/42324 and H01L29/4234 take precedence)}
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H01L29/42368 8 {the thickness being non-uniform}
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H01L29/42372 7 {characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out (H01L29/42324 takes precedence)}
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H01L29/42376 8 {characterised by the length or the sectional shape}
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H01L29/4238 8 {characterised by the surface lay-out}
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H01L29/42384 7 {for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor}
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H01L2029/42388 8 {characterised by the shape of the insulating material}
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H01L29/42392 8 {fully surrounding the channel, e.g. gate-all-around}
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H01L29/42396 5 {for charge coupled devices}
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H01L29/43 2 characterised by the materials of which they are formed
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H01L29/432 3 {Heterojunction gate for field effect devices}
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H01L29/435 3 {Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET}
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H01L29/437 3 {Superconductor materials}
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H01L29/45 3 Ohmic electrodes
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H01L29/452 4 {on AIII-BV compounds}
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H01L29/454 5 {on thin film AIII-BV compounds}
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H01L29/456 4 {on silicon}
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H01L29/458 5 {for thin film silicon, e.g. source or drain electrode}
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H01L29/47 3 Schottky barrier electrodes {(H01L29/435 takes precedence)}
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H01L29/475 4 {on AIII-BV compounds}
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H01L29/49 3 Metal-insulator-semiconductor electrodes, {e.g. gates of MOSFET (H01L29/435 takes precedence)}
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H01L29/4908 4 {for thin film semiconductor, e.g. gate of TFT}
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H01L29/4916 4 {the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen (H01L29/4908, H01L29/4983 take precedence)}
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H01L29/4925 5 {with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement (with only a vertical doping structure or vertical doping variation H01L29/4916)}
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H01L29/4933 6 {with a silicide layer contacting the silicon layer, e.g. Polycide gate (with a barrier layer between the silicide and silicon layers H01L29/4941)}
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H01L29/4941 6 {with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon}
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H01L29/495 4 {the conductor material next to the insulator being a simple metal, e.g. W, Mo (H01L29/4908, H01L29/4983 take precedence)}
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H01L29/4958 5 {with a multiple layer structure}
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H01L29/4966 4 {the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 (H01L29/4908, H01L29/4983 take precedence)}
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H01L29/4975 5 {being a silicide layer, e.g. TiSi2}
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H01L29/4983 4 {with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material}
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H01L29/4991 5 {comprising an air gap}
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H01L29/51 4 Insulating materials associated therewith {(for MIS structures on thin film semiconductor H01L29/4908)}
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H01L29/511 5 {with a compositional variation, e.g. multilayer structures (H01L29/516 takes precedence)}
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H01L29/512 6 {the variation being parallel to the channel plane}
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H01L29/513 6 {the variation being perpendicular to the channel plane}
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H01L29/515 5 {with cavities, e.g. containing a gas}
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H01L29/516 5 {with at least one ferroelectric layer}
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H01L29/517 5 {the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate (H01L29/518 takes precedence)}
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H01L29/518 5 {the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material}
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H01L29/66 1 Types of semiconductor device {; Multistep manufacturing processes therefor}
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H01L29/66007 2 {Multistep manufacturing processes}
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H01L29/66015 3 {of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene}
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H01L29/66022 4 {the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}
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H01L29/6603 5 {Diodes}
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H01L29/66037 4 {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
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H01L29/66045 5 {Field-effect transistors}
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H01L29/66053 3 {of devices having a semiconductor body comprising crystalline silicon carbide}
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H01L29/6606 4 {the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}
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H01L29/66068 4 {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
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H01L29/66075 3 {of devices having semiconductor bodies comprising group 14 or group 13/15 materials (comprising semiconducting carbon H01L29/66015; comprising crystalline silicon carbide H01L29/66053)}
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H01L29/66083 4 {the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}
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H01L29/6609 5 {Diodes}
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H01L29/66098 6 {Breakdown diodes}
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H01L29/66106 7 {Zener diodes}
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H01L29/66113 7 {Avalanche diodes}
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H01L29/66121 6 {Multilayer diodes, e.g. PNPN diodes}
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H01L29/66128 6 {Planar diodes}
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H01L29/66136 6 {PN junction diodes}
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H01L29/66143 6 {Schottky diodes}
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H01L29/66151 6 {Tunnel diodes (group 13/15 resonant tunneling diodes H01L29/66219)}
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H01L29/66159 6 {Transit time diodes, e.g. IMPATT, TRAPATT diodes}
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H01L29/66166 5 {Resistors with PN junction}
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H01L29/66174 5 {Capacitors with PN or Schottky junction, e.g. varactors (capacitors with PN junction combined with MOS control H01L29/66189)}
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H01L29/66181 5 {Conductor-insulator-semiconductor capacitors, e.g. trench capacitors}
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H01L29/66189 6 {with PN junction, e.g. hybrid capacitors}
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H01L29/66196 5 {with an active layer made of a group 13/15 material}
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H01L29/66204 6 {Diodes}
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H01L29/66212 7 {Schottky diodes}
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H01L29/66219 7 {with a heterojunction, e.g. resonant tunneling diodes [RTD]}
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H01L29/66227 4 {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}
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H01L29/66234 5 {Bipolar junction transistors [BJT]}
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H01L29/66242 6 {Heterojunction transistors [HBT] (with an active layer made of a group 13/15 material H01L29/66318)}
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H01L29/6625 6 {Lateral transistors (H01L29/66242 and H01L29/66265 take precedence)}
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H01L29/66257 6 {Schottky transistors}
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H01L29/66265 6 {Thin film bipolar transistors (H01L29/66242 takes precedence)}
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H01L29/66272 6 {Silicon vertical transistors (H01L29/66242, H01L29/66257 and H01L29/66265 take precedence)}
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H01L29/6628 7 {Inverse transistors}
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H01L29/66287 7 {with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation (H01L29/6628 takes precedence)}
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H01L29/66295 7 {with main current going through the whole silicon substrate, e.g. power bipolar transistor}
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H01L29/66303 8 {with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter}
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H01L29/6631 6 {with an active layer made of a group 13/15 material}
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H01L29/66318 7 {Heterojunction transistors}
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H01L29/66325 6 {controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]}
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H01L29/66333 7 {Vertical insulated gate bipolar transistors}
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H01L29/6634 8 {with a recess formed by etching in the source/emitter contact region (H01L29/66348 takes precedence; etching of semiconductor bodies H01L21/302)}
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H01L29/66348 8 {with a recessed gate}
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H01L29/66356 5 {Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]}
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H01L29/66363 5 {Thyristors}
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H01L29/66371 6 {structurally associated with another device, e.g. built-in diode (making integrated circuits H01L21/82)}
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H01L29/66378 7 {the other device being a controlling field-effect device}
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H01L29/66386 6 {Bidirectional thyristors}
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H01L29/66393 6 {Lateral or planar thyristors}
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H01L29/66401 6 {with an active layer made of a group 13/15 material}
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H01L29/66409 5 {Unipolar field-effect transistors}
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H01L29/66416 6 {Static induction transistors [SIT] (with an active layer made of a group 13/15 material H01L29/66454)}
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H01L29/66424 7 {Permeable base transistors [PBT]}
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H01L29/66431 6 {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT (with an active layer made of a group 13/15 material H01L29/66462)}
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H01L29/66439 6 {with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor (with an active layer made of a group 13/15 material H01L29/66469)}
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H01L29/66446 6 {with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]}
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H01L29/66454 7 {Static induction transistors [SIT], e.g. permeable base transistors [PBT]}
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H01L29/66462 7 {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT}
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H01L29/66469 7 {with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors}
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H01L29/66477 6 {with an insulated gate, i.e. MISFET}
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H01L29/66484 7 {with multiple gate, at least one gate being an insulated gate (H01L29/66742 takes precedence)}
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H01L29/66492 7 {with a pocket or a lightly doped drain selectively formed at the side of the gate}
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H01L29/665 7 {using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides H01L21/28518)}
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H01L29/66507 8 {providing different silicide thicknesses on the gate and on source or drain}
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H01L29/66515 7 {using self aligned selective metal deposition simultaneously on the gate and on source or drain}
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H01L29/66522 7 {with an active layer made of a group 13/15 material (H01L29/66446 takes precedence)}
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H01L29/6653 7 {using the removal of at least part of spacer, e.g. disposable spacer}
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H01L29/66537 7 {using a self aligned punch through stopper or threshold implant under the gate region (H01L29/66606 takes precedence)}
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H01L29/66545 7 {using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}
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H01L29/66553 7 {using inside spacers, permanent or not}
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H01L29/6656 7 {using multiple spacer layers, e.g. multiple sidewall spacers}
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H01L29/66568 7 {Lateral single gate silicon transistors}
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H01L29/66575 8 {where the source and drain or source and drain extensions are self-aligned to the sides of the gate (H01L29/66606 takes precedence)}
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H01L29/66583 9 {with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts}
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H01L29/6659 9 {with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET}
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H01L29/66598 10 {forming drain [D] and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer}
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H01L29/66606 8 {with final source and drain contacts formation strictly before final or dummy gate formation, e.g. contact first technology (H01L29/66621 takes precedence)}
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H01L29/66613 8 {with a gate recessing step, e.g. using local oxidation (making recessed gate LDMOS transistors H01L29/66704)}
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H01L29/66621 9 {using etching to form a recess at the gate location (etching of semiconductor bodies H01L21/302)}
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H01L29/66628 9 {recessing the gate by forming single crystalline semiconductor material at the source or drain location}
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H01L29/66636 8 {with source or drain recessed by etching or first recessed by etching and then refilled}
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H01L29/66643 8 {with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure}
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H01L29/66651 8 {with a single crystalline channel formed on the silicon substrate after insulating device isolation}
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H01L29/66659 8 {with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs}
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H01L29/66666 7 {Vertical transistors (H01L29/66712, H01L29/66742 take precedence)}
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H01L29/66674 7 {DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region (making lateral high-voltage MISFETs with channel well and drain offset region H01L29/66659)}
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H01L29/66681 8 {Lateral DMOS transistors, i.e. LDMOS transistors}
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H01L29/66689 9 {with a step of forming an insulating sidewall spacer (forming insulating material on a substrate H01L21/02107)}
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H01L29/66696 9 {with a step of recessing the source electrode}
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H01L29/66704 9 {with a step of recessing the gate electrode, e.g. to form a trench gate electrode}
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H01L29/66712 8 {Vertical DMOS transistors, i.e. VDMOS transistors}
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H01L29/66719 9 {With a step of forming an insulating sidewall spacer}
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H01L29/66727 9 {with a step of recessing the source electrode}
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H01L29/66734 9 {with a step of recessing the gate electrode, e.g. to form a trench gate electrode}
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H01L29/66742 7 {Thin film unipolar transistors}
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H01L29/6675 8 {Amorphous silicon or polysilicon transistors}
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H01L29/66757 9 {Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate}
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H01L29/66765 9 {Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate}
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H01L29/66772 8 {Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates (H01L29/66666 takes precedence; thin film FinFETs H01L29/66795)}
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H01L29/6678 9 {on sapphire substrates, e.g. SOS transistors}
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H01L29/66787 7 {with a gate at the side of the channel}
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H01L29/66795 8 {with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L29/66803 9 {with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants}
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H01L29/6681 9 {using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability}
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H01L29/66818 9 {the channel being thinned after patterning, e.g. sacrificial oxidation on fin}
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H01L29/66825 7 {with a floating gate (H01L29/6684 takes precedence)}
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H01L29/66833 7 {with a charge trapping gate insulator, e.g. MNOS transistors}
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H01L29/6684 7 {with a ferroelectric gate insulator}
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H01L29/66848 6 {with a Schottky gate, i.e. MESFET}
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H01L29/66856 7 {with an active layer made of a group 13/15 material (H01L29/66446 takes precedence)}
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H01L29/66863 8 {Lateral single gate transistors}
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H01L29/66871 9 {Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes}
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H01L29/66878 9 {Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer}
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H01L29/66886 9 {Lateral transistors with two or more independent gates}
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H01L29/66893 6 {with a PN junction gate, i.e. JFET}
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H01L29/66901 7 {with a PN homojunction gate}
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H01L29/66909 8 {Vertical transistors, e.g. tecnetrons}
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H01L29/66916 7 {with a PN heterojunction gate}
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H01L29/66924 7 {with an active layer made of a group 13/15 material (H01L29/66446 takes precedence)}
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H01L29/66931 5 {BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]}
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H01L29/66939 6 {with an active layer made of a group 13/15 material}
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H01L29/66946 5 {Charge transfer devices}
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H01L29/66954 6 {with an insulated gate}
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H01L29/66962 6 {with a Schottky gate}
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H01L29/66969 3 {of devices having semiconductor bodies not comprising group 14 or group 13/15 materials (comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365)}
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H01L29/66977 2 {Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects}
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H01L29/66984 2 {Devices using spin polarized carriers}
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H01L29/66992 2 {controllable only by the variation of applied heat (controllable by IR radiation H01L31/00; measuring quantity of heat G01K17/00)}
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H01L29/68 2 controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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H01L29/685 3 {Hi-Lo semiconductor devices, e.g. memory devices}
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H01L29/70 3 Bipolar devices
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H01L29/705 4 {Double base diodes}
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H01L29/72 4 Transistor-type devices, i.e. able to continuously respond to applied control signals
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H01L29/73 5 Bipolar junction transistors
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H01L29/7302 6 {structurally associated with other devices (assemblies of devices H01L25/00; integrated circuits H01L27/00; IGBT H01L29/7393)}
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H01L29/7304 7 {the device being a resistive element, e.g. ballasting resistor (transistors integrated with resistors H01L27/075)}
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H01L29/7306 6 {Point contact transistors}
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H01L29/7308 6 {Schottky transistors}
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H01L29/7311 6 {Tunnel transistors}
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H01L29/7313 6 {Avalanche transistors}
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H01L29/7315 6 {Transistors with hook collector}
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H01L29/7317 6 {Bipolar thin film transistors}
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H01L29/732 6 Vertical transistors
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H01L29/7322 7 {having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor}
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H01L29/7325 7 {having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor}
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H01L29/7327 7 {Inverse vertical transistors}
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H01L29/735 6 Lateral transistors
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H01L29/737 6 Hetero-junction transistors
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H01L29/7371 7 {Vertical transistors}
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H01L29/7373 8 {having a two-dimensional base, e.g. modulation-doped base, inversion layer base, delta-doped base}
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H01L29/7375 8 {having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements}
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H01L29/7376 8 {Resonant tunnelling transistors}
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H01L29/7378 8 {comprising lattice mismatched active layers, e.g. SiGe strained layer transistors}
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H01L29/739 5 controlled by field-effect, {e.g. bipolar static induction transistors [BSIT] (unijunction transistors H01L29/705)}
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H01L29/7391 6 {Gated diode structures}
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H01L29/7392 7 {with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)}
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H01L29/7393 6 {Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET}
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H01L29/7394 7 {on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate (H01L29/7398 takes precedence)}
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H01L29/7395 7 {Vertical transistors, e.g. vertical IGBT}
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H01L29/7396 8 {with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions (H01L29/7398 takes precedence)}
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H01L29/7397 9 {and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT}
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H01L29/7398 8 {with both emitter and collector contacts in the same substrate side}
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H01L29/74 4 Thyristor-type devices, e.g. having four-zone regenerative action {(two-terminal thyristors H01L29/87)}
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H01L29/7404 5 {structurally associated with at least one other device (assemblies H01L25/00; integrated circuits H01L27/00)}
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H01L29/7408 6 {the device being a capacitor or a resistor}
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H01L29/7412 6 {the device being a diode}
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H01L29/7416 7 {the device being an antiparallel diode, e.g. RCT (shorted anode structures enabling reverse conduction H01L29/0834)}
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H01L29/742 6 {the device being a field effect transistor (for turn-on or turn-off by field effect H01L29/745, H01L29/749)}
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H01L29/7424 5 {having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing}
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H01L29/7428 5 {having an amplifying gate structure, e.g. cascade (Darlington) configuration}
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H01L29/7432 5 {Asymmetrical thyristors (with a particular shorted anode structure H01L29/0834)}
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H01L29/7436 5 {Lateral thyristors}
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H01L29/744 5 Gate-turn-off devices
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H01L29/745 6 with turn-off by field effect
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H01L29/7455 7 {produced by an insulated gate structure}
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H01L29/747 5 Bidirectional devices, e.g. triacs
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H01L29/749 5 with turn-on by field effect
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H01L29/76 3 Unipolar devices {, e.g. field effect transistors}
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H01L29/7606 4 {Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]}
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H01L29/7613 4 {Single electron transistors; Coulomb blockade devices (H01L29/7888 takes precedence)}
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H01L29/762 4 Charge transfer devices
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H01L29/765 5 Charge-coupled devices {(peripheral circuits for CCD storage devices G11C19/285)}
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H01L29/768 6 with field effect produced by an insulated gate
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H01L29/76808 7 {Input structures}
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H01L29/76816 7 {Output structures}
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H01L29/76825 7 {Structures for regeneration, refreshing, leakage compensation or the like}
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H01L29/76833 7 {Buried channel CCD}
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H01L29/76841 8 {Two-Phase CCD}
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H01L29/7685 8 {Three-Phase CCD}
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H01L29/76858 8 {Four-Phase CCD}
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H01L29/76866 7 {Surface Channel CCD}
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H01L29/76875 8 {Two-Phase CCD}
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H01L29/76883 8 {Three-Phase CCD}
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H01L29/76891 8 {Four-Phase CCD}
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H01L29/772 4 Field effect transistors
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H01L29/7722 5 {using static field induced regions, e.g. SIT, PBT}
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H01L29/7725 5 {with delta-doped channel (H01L29/778 takes precedence)}
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H01L29/7727 5 {Velocity modulation transistors, i.e. VMT}
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H01L29/775 5 with one dimensional charge carrier gas channel, e.g. quantum wire FET
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H01L29/778 5 with two-dimensional charge carrier gas channel, e.g. HEMT {; with two-dimensional charge-carrier layer formed at a heterojunction interface (H01L29/803 takes precedence)}
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H01L29/7781 6 {with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT}
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H01L29/7782 6 {with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET}
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H01L29/7783 7 {using III-V semiconductor material}
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H01L29/7784 8 {with delta or planar doped donor layer (H01L29/7785 takes precedence)}
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H01L29/7785 8 {with more than one donor layer}
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H01L29/7786 6 {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
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H01L29/7787 7 {with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET}
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H01L29/7788 6 {Vertical transistors}
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H01L29/7789 6 {the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body}
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H01L29/78 5 with field effect produced by an insulated gate {(H01L29/7725, H01L29/775, H01L29/778 take precedence)}
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H01L29/7801 6 {DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region (lateral high-voltage MISFETs with channel well and drain offset region H01L29/7835)}
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H01L29/7802 7 {Vertical DMOS transistors, i.e. VDMOS transistors}
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H01L29/7803 8 {structurally associated with at least one other device (assemblies H01L25/00; integrated circuits H01L27/00)}
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H01L29/7804 9 {the other device being a pn-junction diode}
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H01L29/7805 10 {in antiparallel, e.g. freewheel diode}
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H01L29/7806 9 {the other device being a Schottky barrier diode}
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H01L29/7808 9 {the other device being a breakdown diode, e.g. Zener diode}
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H01L29/7809 8 {having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors}
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H01L29/781 8 {Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors}
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H01L29/7811 8 {with an edge termination structure (guard regions per se H01L29/0619; field plates per se H01L29/402)}
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H01L29/7812 8 {with a substrate comprising an insulating layer, e.g. SOI-VDMOS transistors}
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H01L29/7813 8 {with trench gate electrode, e.g. UMOS transistors (trench gate electrodes per se H01L29/4236)}
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H01L29/7815 8 {with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell}
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H01L29/7816 7 {Lateral DMOS transistors, i.e. LDMOS transistors}
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H01L29/7817 8 {structurally associated with at least one other device (assemblies H01L25/00; integrated circuits H01L27/00)}
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H01L29/7818 9 {the other device being a pn-junction diode}
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H01L29/7819 10 {in antiparallel, e.g. freewheel diode}
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H01L29/782 9 {the other device being a Schottky barrier diode}
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H01L29/7821 9 {the other device being a breakdown diode, e.g. Zener diode}
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H01L29/7823 8 {with an edge termination structure (guard regions per se H01L29/0619; field plates per se H01L29/402)}
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H01L29/7824 8 {with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors}
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H01L29/7825 8 {with trench gate electrode (trench gate electrodes per se H01L29/4236)}
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H01L29/7826 8 {with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell}
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H01L29/7827 6 {Vertical transistors (H01L29/7802, H01L29/78642 take precedence)}
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H01L29/7828 7 {without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs}
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H01L29/783 6 {comprising a gate to body connection, i.e. bulk dynamic threshold voltage MOSFET (for thin film transistors H01L29/78612, H01L29/78696)}
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H01L29/7831 6 {with multiple gate structure (FinFETs or MuGFETs H01L29/7855, thin film transistors H01L29/78645)}
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H01L29/7832 7 {the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate}
|
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|
H01L29/7833 6 {with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's (for thin film transistors H01L29/78618)}
|
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H01L29/7834 7 {with a non-planar structure, e.g. the gate or the source or the drain being non-planar}
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H01L29/7835 7 {with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs}
|
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|
H01L29/7836 7 {with a significant overlap between the lightly doped extension and the gate electrode (H01L29/7834, H01L29/7835 take precedence)}
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H01L29/7838 6 {without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs}
|
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|
H01L29/7839 6 {with Schottky drain or source contact}
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H01L29/78391 6 {the gate comprising a layer which is used for its ferroelectric properties}
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H01L29/7841 6 {with floating body, e.g. programmable transistors}
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H01L29/7842 6 {means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate (variation of the composition of the channel H01L29/1054)}
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H01L29/7843 7 {the means being an applied insulating layer}
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H01L29/7845 7 {the means being a conductive material, e.g. silicided S/D or Gate}
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H01L29/7846 7 {the means being located in the lateral device isolation region, e.g. STI}
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H01L29/7847 7 {using a memorization technique, e.g. re-crystallization under strain, bonding on a substrate having a thermal expansion coefficient different from the one of the region}
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H01L29/7848 7 {the means being located in the source/drain region, e.g. SiGe source and drain}
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H01L29/7849 7 {the means being provided under the channel}
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H01L29/785 6 {having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET}
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H01L29/7851 7 {with the body tied to the substrate}
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H01L29/7853 7 {the body having a non-rectangular crossection}
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H01L29/7854 8 {with rounded corners}
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H01L29/7855 7 {with at least two independent gates}
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H01L29/7856 7 {with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides (H01L29/7855 takes precedence)}
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H01L2029/7857 7 {of the accumulation type}
|
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H01L2029/7858 7 {having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts}
|
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|
H01L29/786 6 Thin film transistors, {i.e. transistors with a channel being at least partly a thin film (transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785)}
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H01L29/78603 7 {characterised by the insulating substrate or support (H01L29/78657 takes precedence)}
|
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H01L29/78606 7 {with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device (H01L29/78642, H01L29/78645 take precedence)}
|
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|
H01L29/78609 8 {for preventing leakage current (H01L29/78618 takes precedence)}
|
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H01L29/78612 8 {for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect}
|
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H01L29/78615 9 {with a body contact}
|
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H01L29/78618 8 {characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure (silicide contacts, electrodes in general H01L29/458)}
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H01L29/78621 9 {with LDD structure or an extension or an offset region or characterised by the doping profile}
|
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H01L29/78624 10 {the source and the drain regions being asymmetrical}
|
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H01L29/78627 10 {with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD}
|
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H01L2029/7863 10 {with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD}
|
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H01L29/78633 8 {with a light shield}
|
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H01L29/78636 8 {with supplementary region or layer for improving the flatness of the device}
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H01L29/78639 8 {with a drain or source connected to a bulk conducting substrate}
|
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H01L29/78642 7 {Vertical transistors}
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H01L29/78645 7 {with multiple gate}
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H01L29/78648 8 {arranged on opposing sides of the channel}
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H01L29/78651 7 {Silicon transistors (H01L29/78606 - H01L29/78645 take precedence)}
|
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H01L29/78654 8 {Monocrystalline silicon transistors}
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H01L29/78657 9 {SOS transistors}
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H01L29/7866 8 {Non-monocrystalline silicon transistors}
|
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H01L29/78663 9 {Amorphous silicon transistors}
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H01L29/78666 10 {with normal-type structure, e.g. with top gate}
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H01L29/78669 10 {with inverted-type structure, e.g. with bottom gate}
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H01L29/78672 9 {Polycrystalline or microcrystalline silicon transistor}
|
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|
H01L29/78675 10 {with normal-type structure, e.g. with top gate}
|
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H01L29/78678 10 {with inverted-type structure, e.g. with bottom gate}
|
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H01L29/78681 7 {having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te}
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|
H01L29/78684 7 {having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys (H01L29/7869 takes precedence)}
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H01L29/78687 8 {with a multilayer structure or superlattice structure}
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H01L29/7869 7 {having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate}
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H01L29/78693 8 {the semiconducting oxide being amorphous}
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H01L29/78696 7 {characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel (H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621)}
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H01L29/788 6 with floating gate {(H01L29/78391 takes precedence)}
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H01L29/7881 7 {Programmable transistors with only two possible levels of programmation (H01L29/7888 takes precedence)}
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H01L29/7882 8 {charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction}
|
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H01L29/7883 8 {charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling}
|
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H01L29/7884 8 {charging by hot carrier injection}
|
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H01L29/7885 9 {Hot carrier injection from the channel}
|
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H01L29/7886 9 {Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS}
|
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H01L29/7887 7 {Programmable transistors with more than two possible different levels of programmation}
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H01L29/7888 7 {Transistors programmable by two single electrons}
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H01L29/7889 7 {Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane}
|
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|
H01L29/792 6 with charge trapping gate insulator, e.g. MNOS-memory transistors
|
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H01L29/7923 7 {Programmable transistors with more than two possible different levels of programmation}
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H01L29/7926 7 {Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane}
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H01L29/80 5 with field effect produced by a PN or other rectifying junction gate {, i.e. potential-jump barrier}
|
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|
H01L29/802 6 {with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors (H01L29/806 takes precedence; with one dimensional electron gas H01L29/775; with dimensional electron gas H01L29/778)}
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|
H01L29/803 7 {Programmable transistors, e.g. with charge-trapping quantum well}
|
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H01L29/806 6 {with Schottky drain or source contact}
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H01L29/808 6 with a PN junction gate {, e.g. PN homojunction gate (H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence)}
|
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|
H01L29/8083 7 {Vertical transistors (SIT H01L29/7722)}
|
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|
H01L29/8086 7 {Thin film JFET's}
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H01L29/812 6 with a Schottky gate {(H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence; with Schottky contact on top of heterojunction gate H01L29/802)}
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|
H01L29/8122 7 {Vertical transistors (SIT, PBT H01L29/7722)}
|
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|
H01L29/8124 7 {with multiple gate}
|
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H01L29/8126 7 {Thin film MESFET's}
|
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H01L29/8128 7 {with recessed gate}
|
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H01L29/82 2 controllable by variation of the magnetic field applied to the device
|
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|
H01L29/84 2 controllable by variation of applied mechanical force, e.g. of pressure
|
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|
H01L29/86 2 controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
|
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H01L29/8605 3 Resistors with PN junctions
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H01L29/861 3 Diodes
|
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H01L29/8611 4 {Planar PN junction diodes}
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H01L29/8613 4 {Mesa PN junction diodes}
|
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H01L29/8615 4 {Hi-lo semiconductor devices, e.g. memory devices}
|
|
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|
|
H01L29/8616 4 {Charge trapping diodes}
|
|
|
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|
H01L29/8618 4 {Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes}
|
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H01L29/862 4 Point contact diodes
|
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|
H01L29/864 4 Transit-time diodes, e.g. IMPATT, TRAPATT diodes
|
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H01L29/866 4 Zener diodes
|
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|
H01L29/868 4 PIN diodes
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|
H01L29/87 4 Thyristor diodes, e.g. Shockley diodes, break-over diodes
|
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|
H01L29/872 4 Schottky diodes
|
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|
H01L29/8725 5 {of the trench MOS barrier type [TMBS]}
|
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|
H01L29/88 4 Tunnel-effect diodes
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H01L29/882 5 {Resonant tunneling diodes, i.e. RTD, RTBD}
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H01L29/885 5 Esaki diodes
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H01L29/92 3 Capacitors with potential-jump barrier or surface barrier
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H01L29/93 4 Variable capacitance diodes, e.g. varactors
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H01L29/94 4 Metal-insulator-semiconductors, e.g. MOS
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H01L29/945 5 {Trench capacitors}
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H01L31/00 0 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H10K30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L27/00)
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H01L31/02 1 Details
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H01L31/02002 2 {Arrangements for conducting electric current to or from the device in operations}
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H01L31/02005 3 {for device characterised by at least one potential jump barrier or surface barrier}
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H01L31/02008 4 {for solar cells or solar cell modules}
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H01L31/0201 5 {comprising specially adapted module bus-bar structures}
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H01L31/02013 5 {comprising output lead wires elements}
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H01L31/02016 2 {Circuit arrangements of general character for the devices}
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H01L31/02019 3 {for devices characterised by at least one potential jump barrier or surface barrier}
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H01L31/02021 4 {for solar cells (electrical connection means, e.g. junction boxes, specially adapted for structural association with photovoltaic modules H02S40/34)}
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H01L31/02024 4 {Position sensitive and lateral effect photodetectors; Quadrant photodiodes}
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H01L31/02027 4 {for devices working in avalanche mode}
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H01L31/0203 2 Containers; Encapsulations {, e.g. encapsulation of photodiodes}(for photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80)
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H01L31/0216 2 Coatings (H01L31/041 takes precedence)
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H01L31/02161 3 {for devices characterised by at least one potential jump barrier or surface barrier}
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H01L31/02162 4 {for filtering or shielding light, e.g. multicolour filters for photodetectors}
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H01L31/02164 5 {for shielding light, e.g. light blocking layers, cold shields for infra-red detectors}
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H01L31/02165 5 {using interference filters, e.g. multilayer dielectric filters (interference filters G02B5/28)}
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H01L31/02167 4 {for solar cells}
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H01L31/02168 5 {the coatings being antireflective or having enhancing optical properties for the solar cells}
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H01L31/0224 2 Electrodes
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H01L31/022408 3 {for devices characterised by at least one potential jump barrier or surface barrier}
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H01L31/022416 4 {comprising ring electrodes}
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H01L31/022425 4 {for solar cells}
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H01L31/022433 5 {Particular geometry of the grid contacts}
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H01L31/022441 5 {Electrode arrangements specially adapted for back-contact solar cells}
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H01L31/02245 6 {for metallisation wrap-through [MWT] type solar cells}
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H01L31/022458 6 {for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts}
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H01L31/022466 3 {made of transparent conductive layers, e.g. TCO, ITO layers}
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H01L31/022475 4 {composed of indium tin oxide [ITO]}
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H01L31/022483 4 {composed of zinc oxide [ZnO]}
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H01L31/022491 4 {composed of a thin transparent metal layer, e.g. gold}
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H01L31/0232 2 Optical elements or arrangements associated with the device (H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20)
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H01L31/02322 3 {comprising luminescent members, e.g. fluorescent sheets upon the device}
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H01L31/02325 3 {the optical elements not being integrated nor being directly associated with the device}
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H01L31/02327 3 {the optical elements being integrated or being directly associated to the device, e.g. back reflectors (optical coatings H01L31/0216)}
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H01L31/0236 2 Special surface textures
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H01L31/02363 3 {of the semiconductor body itself, e.g. textured active layers}
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H01L31/02366 3 {of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate}
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H01L31/024 2 Arrangements for cooling, heating, ventilating or temperature compensation (for photovoltaic devices H01L31/052)
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H01L31/0248 1 characterised by their semiconductor bodies
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H01L31/0256 2 characterised by the material
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H01L31/0264 3 Inorganic materials
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H01L31/0272 4 Selenium or tellurium
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H01L31/02725 5 {characterised by the doping material}
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H01L31/028 4 including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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H01L31/0284 5 {comprising porous silicon as part of the active layer(s) (porous silicon as antireflective layer for photodiodes H01L31/0216; for solar cells H01L31/02168)}
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H01L31/0288 5 characterised by the doping material
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H01L31/0296 4 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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H01L31/02963 5 {characterised by the doping material}
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H01L31/02966 5 {including ternary compounds, e.g. HgCdTe}
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H01L31/0304 4 including, apart from doping materials or other impurities, only AIIIBV compounds
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H01L31/03042 5 {characterised by the doping material}
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H01L31/03044 5 {comprising a nitride compounds, e.g. GaN}
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H01L31/03046 5 {including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP}
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H01L31/03048 6 {comprising a nitride compounds, e.g. InGaN}
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H01L31/0312 4 including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
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H01L31/03125 5 {characterised by the doping material}
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H01L31/032 4 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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H01L31/0321 5 {characterised by the doping material (H01L31/0323, H01L31/0325 take precedence)}
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H01L31/0322 5 {comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2}
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H01L31/0323 6 {characterised by the doping material}
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H01L31/0324 5 {comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te}
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H01L31/0325 6 {characterised by the doping material}
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H01L31/0326 5 {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
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H01L31/0327 6 {characterised by the doping material}
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H01L31/0328 4 including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
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H01L31/0336 5 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
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H01L31/03365 6 {comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System}
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H01L2031/0344 3 {Organic materials}
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H01L31/0352 2 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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H01L31/035209 3 {comprising a quantum structures}
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H01L31/035218 4 {the quantum structure being quantum dots}
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H01L31/035227 4 {the quantum structure being quantum wires, or nanorods (carbon nanotubes H10K85/211)}
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H01L31/035236 3 {Superlattices; Multiple quantum well structures}
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H01L31/035245 4 {characterised by amorphous semiconductor layers}
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H01L31/035254 4 {including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices}
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H01L31/035263 4 {Doping superlattices, e.g. nipi superlattices}
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H01L31/035272 3 {characterised by at least one potential jump barrier or surface barrier}
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H01L31/035281 4 {Shape of the body}
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H01L31/03529 4 {Shape of the potential jump barrier or surface barrier}
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H01L31/036 2 characterised by their crystalline structure or particular orientation of the crystalline planes
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H01L31/0368 3 including polycrystalline semiconductors (H01L31/0392 takes precedence)
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H01L31/03682 4 {including only elements of Group IV of the Periodic System}
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H01L31/03685 5 {including microcrystalline silicon, uc-Si}
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H01L31/03687 5 {including microcrystalline AIVBIV alloys, e.g. uc-SiGe, uc-SiC}
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H01L31/0376 3 including amorphous semiconductors (H01L31/0392 takes precedence)
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H01L31/03762 4 {including only elements of Group IV of the Periodic System}
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H01L31/03765 5 {including AIVBIV compounds or alloys, e.g. SiGe, SiC}
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H01L31/03767 5 {presenting light-induced characteristic variations, e.g. Staebler-Wronski effect}
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H01L31/0384 3 including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material (H01L31/0392 takes precedence)
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H01L31/03845 4 {comprising semiconductor nanoparticles embedded in a semiconductor matrix (in insulating matrix H01L31/0384)}
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H01L31/0392 3 including thin films deposited on metallic or insulating substrates {; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate (textured substrates H01L31/02366)}
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H01L31/03921 4 {including only elements of Group IV of the Periodic System}
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H01L31/03923 4 {including AIBIIICVI compound materials, e.g. CIS, CIGS}
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H01L31/03925 4 {including AIIBVI compound materials, e.g. CdTe, CdS}
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H01L31/03926 4 {comprising a flexible substrate}
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H01L31/03928 5 {including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils}
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H01L31/04 1 adapted as photovoltaic [PV] conversion devices (testing thereof during manufacture {H01L22/00}; testing thereof after manufacture H02S50/10)
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H01L31/041 2 Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
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H01L31/042 2 PV modules or arrays of single PV cells (supporting structures for PV modules H02S20/00)
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H01L31/043 3 Mechanically stacked PV cells
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H01L31/044 3 including bypass diodes (bypass diodes in the junction box H02S40/34)
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H01L31/0443 4 comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
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H01L31/0445 3 including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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H01L31/046 4 PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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H01L31/0463 5 characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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H01L31/0465 5 comprising particular structures for the electrical interconnection of adjacent PV cells in the module (H01L31/0463 takes precedence)
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H01L31/0468 5 comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
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H01L31/047 3 PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
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H01L31/0475 3 PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays (PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046)
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H01L31/048 3 Encapsulation of modules
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H01L31/0481 4 {characterised by the composition of the encapsulation material}
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H01L31/0488 4 {Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets}
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H01L31/049 4 Protective back sheets
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H01L31/05 3 Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells (electrodes H01L31/0224; electrical interconnection of thin film solar cells formed on a common substrate H01L31/046; particular structures for electrical interconnecting of adjacent thin film solar cells in the module H01L31/0465; electrical interconnection means specially adapted for electrically connecting two or more PV modules H02S40/36)
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H01L31/0504 4 {specially adapted for series or parallel connection of solar cells in a module}
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H01L31/0508 5 {the interconnection means having a particular shape}
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H01L31/0512 5 {made of a particular material or composition of materials}
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H01L31/0516 5 {specially adapted for interconnection of back-contact solar cells}
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H01L31/052 2 Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells (cooling means in combination with the PV module H02S40/42)
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H01L31/0521 3 {using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation}
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H01L31/0525 3 including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
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H01L31/053 2 Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell (energy storage means associated with the PV module H02S40/38)
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H01L31/054 2 Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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H01L31/0543 3 {comprising light concentrating means of the refractive type, e.g. lenses}
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H01L31/0547 3 {comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection}
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H01L31/0549 3 {comprising spectrum splitting means, e.g. dichroic mirrors}
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H01L31/055 3 where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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H01L31/056 3 the light-reflecting means being of the back surface reflector [BSR] type
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H01L31/06 2 characterised by at least one potential-jump barrier or surface barrier
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H01L31/061 3 the potential barriers being of the point-contact type (H01L31/07 takes precedence)
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H01L31/062 3 the potential barriers being only of the metal-insulator-semiconductor type
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H01L31/065 3 the potential barriers being only of the graded gap type
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H01L31/068 3 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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H01L31/0682 4 {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
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H01L31/0684 4 {double emitter cells, e.g. bifacial solar cells}
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H01L31/0687 4 Multiple junction or tandem solar cells
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H01L31/06875 5 {inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells}
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H01L31/0693 4 the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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H01L31/07 3 the potential barriers being only of the Schottky type
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H01L31/072 3 the potential barriers being only of the PN heterojunction type
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H01L31/0725 4 Multiple junction or tandem solar cells
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H01L31/073 4 comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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H01L31/0735 4 comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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H01L31/074 4 comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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H01L31/0745 4 comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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H01L31/0747 5 comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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H01L31/0749 4 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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H01L31/075 3 the potential barriers being only of the PIN type
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H01L31/076 4 Multiple junction or tandem solar cells
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H01L31/077 4 the devices comprising monocrystalline or polycrystalline materials
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H01L31/078 3 including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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H01L31/08 1 in which radiation controls flow of current through the device, e.g. photoresistors
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H01L31/085 2 {the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays}
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H01L31/09 2 Devices sensitive to infra-red, visible or ultraviolet radiation (H01L31/101 takes precedence)
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H01L31/095 3 {comprising amorphous semiconductors}
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H01L31/10 2 characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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H01L31/101 3 Devices sensitive to infra-red, visible or ultra-violet radiation
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H01L31/1013 4 {devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices}
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H01L31/1016 4 {comprising transparent or semitransparent devices}
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H01L31/102 4 characterised by only one potential barrier or surface barrier
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H01L31/1025 5 {the potential barrier being of the point contact type}
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H01L31/103 5 the potential barrier being of the PN homojunction type
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H01L31/1032 6 {the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes}
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H01L31/1035 6 {the devices comprising active layers formed only by AIIIBV compounds}
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H01L31/1037 6 {the devices comprising active layers formed only by AIVBVI compounds}
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H01L31/105 5 the potential barrier being of the PIN type
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H01L31/1055 6 {the devices comprising amorphous materials of Group IV of the Periodic System}
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H01L31/107 5 the potential barrier working in avalanche mode, e.g. avalanche photodiode
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H01L31/1075 6 {in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure}
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H01L31/108 5 the potential barrier being of the Schottky type
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H01L31/1085 6 {the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type}
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H01L31/109 5 the potential barrier being of the PN heterojunction type
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H01L31/11 4 characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
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H01L31/1105 5 {the device being a bipolar phototransistor}
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H01L31/111 4 characterised by at least three potential barriers, e.g. photothyristor
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H01L31/1113 5 {the device being a photothyristor}
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H01L31/1116 6 {of the static induction type}
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H01L31/112 4 characterised by field-effect operation, e.g. junction field-effect phototransistor
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H01L31/1121 5 {Devices with Schottky gate}
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H01L31/1122 6 {the device being a CCD device}
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H01L31/1123 6 {the device being a photo MESFET}
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H01L31/1124 5 {Devices with PN homojunction gate}
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H01L31/1125 6 {the device being a CCD device}
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H01L31/1126 6 {the device being a field-effect phototransistor}
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H01L31/1127 5 {Devices with PN heterojunction gate}
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H01L31/1128 6 {the device being a CCD device}
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H01L31/1129 6 {the device being a field-effect phototransistor}
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H01L31/113 5 being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
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H01L31/1133 6 {the device being a conductor-insulator-semiconductor diode or a CCD device}
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H01L31/1136 6 {the device being a metal-insulator-semiconductor field-effect transistor}
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H01L31/115 3 Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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H01L31/117 4 of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
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H01L31/1175 5 {Li compensated PIN gamma-ray detectors}
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H01L31/118 4 of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
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H01L31/1185 5 {of the shallow PN junction detector type}
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H01L31/119 4 characterised by field-effect operation, e.g. MIS type detectors
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H01L31/12 1 structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (semiconductor devices with at least one potential barrier or surface barrier adapted for light emission H01L33/00; amplifiers using electroluminescent element and photocell H03F17/00; electroluminescent light sources per se H05B33/00)
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H01L31/125 2 {Composite devices with photosensitive elements and electroluminescent elements within one single body}
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H01L31/14 2 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
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H01L31/141 3 {the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier}
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H01L31/143 4 {the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode}
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H01L31/145 3 {the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier}
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H01L31/147 3 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
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H01L31/153 4 formed in, or on, a common substrate
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H01L31/16 2 the semiconductor device sensitive to radiation being controlled by the light source or sources
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H01L31/161 3 {Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors}
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H01L31/162 4 {the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode}
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H01L31/164 4 {Optical potentiometers}
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H01L31/165 3 {the semiconductor sensitive to radiation being characterised by at least one potential-jump or surface barrier}
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H01L31/167 3 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
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H01L31/173 4 formed in, or on, a common substrate
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H01L31/18 1 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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H01L31/1804 2 {comprising only elements of Group IV of the Periodic System}
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H01L31/1808 3 {including only Ge}
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H01L31/1812 3 {including only AIVBIV alloys, e.g. SiGe}
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H01L31/1816 4 {Special manufacturing methods for microcrystalline layers, e.g. uc-SiGe, uc-SiC}
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H01L31/182 3 {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}
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H01L31/1824 4 {Special manufacturing methods for microcrystalline Si, uc-Si}
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H01L31/1828 2 {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}
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H01L31/1832 3 {comprising ternary compounds, e.g. Hg Cd Te}
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H01L31/1836 3 {comprising a growth substrate not being an AIIBVI compound}
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H01L31/184 2 {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
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H01L31/1844 3 {comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P}
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H01L31/1848 4 {comprising nitride compounds, e.g. InGaN, InGaAlN}
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H01L31/1852 3 {comprising a growth substrate not being an AIIIBV compound}
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H01L31/1856 3 {comprising nitride compounds, e.g. GaN}
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H01L31/186 2 {Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation}
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H01L31/1864 3 {Annealing}
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H01L31/1868 3 {Passivation}
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H01L31/1872 3 {Recrystallisation}
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H01L31/1876 2 {Particular processes or apparatus for batch treatment of the devices}
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H01L31/188 3 {Apparatus specially adapted for automatic interconnection of solar cells in a module}
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H01L31/1884 2 {Manufacture of transparent electrodes, e.g. TCO, ITO}
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H01L31/1888 3 {methods for etching transparent electrodes}
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H01L31/1892 2 {methods involving the use of temporary, removable substrates}
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H01L31/1896 3 {for thin-film semiconductors}
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H01L31/20 2 such devices or parts thereof comprising amorphous semiconductor materials
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H01L31/202 3 {including only elements of Group IV of the Periodic System}
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H01L31/204 4 {including AIVBIV alloys, e.g. SiGe, SiC}
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H01L31/206 3 {Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition}
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H01L31/208 3 {Particular post-treatment of the devices, e.g. annealing, short-circuit elimination}
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H01L33/00 0 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00)
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H01L33/0004 1 {Devices characterised by their operation}
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H01L33/0008 2 {having p-n or hi-lo junctions}
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H01L33/0012 3 {p-i-n devices}
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H01L33/0016 3 {having at least two p-n junctions}
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H01L33/002 2 {having heterojunctions or graded gap}
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H01L33/0025 3 {comprising only AIIIBV compounds}
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H01L33/0029 3 {comprising only AIIBVI compounds}
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H01L33/0033 2 {having Schottky barriers}
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H01L33/0037 2 {having a MIS barrier layer}
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H01L33/0041 2 {characterised by field-effect operation}
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H01L33/0045 2 {the devices being superluminescent diodes}
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H01L33/005 1 {Processes}
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H01L33/0054 2 {for devices with an active region comprising only group IV elements}
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H01L33/0058 3 {comprising amorphous semiconductors}
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H01L33/0062 2 {for devices with an active region comprising only III-V compounds}
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H01L33/0066 3 {with a substrate not being a III-V compound}
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H01L33/007 4 {comprising nitride compounds}
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H01L33/0075 3 {comprising nitride compounds}
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H01L33/0083 2 {for devices with an active region comprising only II-VI compounds}
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H01L33/0087 3 {with a substrate not being a II-VI compound}
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H01L33/0091 2 {for devices with an active region comprising only IV-VI compounds}
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H01L33/0093 2 {Wafer bonding; Removal of the growth substrate}
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H01L33/0095 2 {Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination}
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H01L33/02 1 characterised by the semiconductor bodies
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H01L33/025 2 {Physical imperfections, e.g. particular concentration or distribution of impurities}
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H01L33/04 2 with a quantum effect structure or superlattice, e.g. tunnel junction
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H01L33/06 3 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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H01L33/08 2 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body (H01L27/15 takes precedence)
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H01L33/10 2 with a light reflecting structure, e.g. semiconductor Bragg reflector
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H01L33/105 3 {with a resonant cavity structure}
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H01L33/12 2 with a stress relaxation structure, e.g. buffer layer
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H01L33/14 2 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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H01L33/145 3 {with a current-blocking structure}
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H01L33/16 2 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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H01L33/18 3 within the light emitting region
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H01L33/20 2 with a particular shape, e.g. curved or truncated substrate
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H01L33/22 3 Roughened surfaces, e.g. at the interface between epitaxial layers
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H01L33/24 3 of the light emitting region, e.g. non-planar junction
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H01L33/26 2 Materials of the light emitting region
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H01L33/28 3 containing only elements of group II and group VI of the periodic system
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H01L33/285 4 {characterised by the doping materials}
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H01L33/30 3 containing only elements of group III and group V of the periodic system
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H01L33/305 4 {characterised by the doping materials}
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H01L33/32 4 containing nitrogen
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H01L33/325 5 {characterised by the doping materials}
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H01L33/34 3 containing only elements of group IV of the periodic system
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H01L33/343 4 {characterised by the doping materials}
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H01L33/346 4 {containing porous silicon}
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H01L33/36 1 characterised by the electrodes
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H01L33/38 2 with a particular shape
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H01L33/382 3 {the electrode extending partially in or entirely through the semiconductor body}
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H01L33/385 3 {the electrode extending at least partially onto a side surface of the semiconductor body}
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H01L33/387 3 {with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer}
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H01L33/40 2 Materials therefor
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H01L33/405 3 {Reflective materials}
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H01L33/42 3 Transparent materials
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H01L33/44 1 characterised by the coatings, e.g. passivation layer or anti-reflective coating
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H01L33/46 2 Reflective coating, e.g. dielectric Bragg reflector
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H01L33/465 3 {with a resonant cavity structure}
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H01L33/48 1 characterised by the semiconductor body packages
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H01L33/483 2 {Containers}
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H01L33/486 3 {adapted for surface mounting}
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H01L33/50 2 Wavelength conversion elements
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H01L33/501 3 {characterised by the materials, e.g. binder}
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H01L33/502 4 {Wavelength conversion materials}
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H01L33/504 5 {Elements with two or more wavelength conversion materials}
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H01L33/505 3 {characterised by the shape, e.g. plate or foil}
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H01L33/507 3 {the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body}
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H01L33/508 3 {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material}
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H01L33/52 2 Encapsulations
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H01L33/54 3 having a particular shape
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H01L33/56 3 Materials, e.g. epoxy or silicone resin
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H01L33/58 2 Optical field-shaping elements
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H01L33/60 3 Reflective elements
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H01L33/62 2 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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H01L33/64 2 Heat extraction or cooling elements
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H01L33/641 3 {characterized by the materials}
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H01L33/642 3 {characterized by the shape}
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H01L33/644 3 {in intimate contact or integrated with parts of the device other than the semiconductor body}
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H01L33/645 3 {the elements being electrically controlled, e.g. Peltier elements}
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H01L33/647 3 {the elements conducting electric current to or from the semiconductor body}
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H01L33/648 3 {the elements comprising fluids, e.g. heat-pipes}
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H01L2221/00 0 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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H01L2221/10 1 Applying interconnections to be used for carrying current between separate components within a device
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H01L2221/1005 2 Formation and after-treatment of dielectrics
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H01L2221/101 3 Forming openings in dielectrics
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H01L2221/1015 4 for dual damascene structures
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H01L2221/1021 5 Pre-forming the dual damascene structure in a resist layer
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H01L2221/1026 5 the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar
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H01L2221/1031 5 Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
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H01L2221/1036 5 Dual damascene with different via-level and trench-level dielectrics
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H01L2221/1042 3 the dielectric comprising air gaps
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H01L2221/1047 4 the air gaps being formed by pores in the dielectric
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H01L2221/1052 3 Formation of thin functional dielectric layers
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H01L2221/1057 4 in via holes or trenches
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H01L2221/1063 5 Sacrificial or temporary thin dielectric films in openings in a dielectric
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H01L2221/1068 2 Formation and after-treatment of conductors
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H01L2221/1073 3 Barrier, adhesion or liner layers
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H01L2221/1078 4 Multiple stacked thin films not being formed in openings in dielectrics
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H01L2221/1084 4 Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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H01L2221/1089 5 Stacks of seed layers
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H01L2221/1094 3 Conducting structures comprising nanotubes or nanowires
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H01L2221/67 1 Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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H01L2221/683 2 for supporting or gripping
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H01L2221/68304 3 using temporarily an auxiliary support
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H01L2221/68309 4 Auxiliary support including alignment aids
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H01L2221/68313 4 Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
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H01L2221/68318 4 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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H01L2221/68322 5 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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H01L2221/68327 4 used during dicing or grinding
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H01L2221/68331 5 of passive members, e.g. die mounting substrate
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H01L2221/68336 5 involving stretching of the auxiliary support post dicing
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H01L2221/6834 4 used to protect an active side of a device or wafer
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H01L2221/68345 4 used as a support during the manufacture of self supporting substrates
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H01L2221/6835 4 used as a support during build up manufacturing of active devices
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H01L2221/68354 4 used to support diced chips prior to mounting
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H01L2221/68359 4 used as a support during manufacture of interconnect decals or build up layers
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H01L2221/68363 4 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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H01L2221/68368 4 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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H01L2221/68372 4 used to support a device or wafer when forming electrical connections thereto (when forming bonding pads H01L24/03; when forming bump connectors H01L24/11; when forming layer connectors H01L24/27)
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H01L2221/68377 4 with parts of the auxiliary support remaining in the finished device
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H01L2221/68381 4 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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H01L2221/68386 5 Separation by peeling
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H01L2221/6839 6 using peeling wedge or knife or bar
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H01L2221/68395 6 using peeling wheel
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H01L2223/00 0 Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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H01L2223/544 1 Marks applied to semiconductor devices or parts
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H01L2223/54406 2 comprising alphanumeric information
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H01L2223/54413 2 comprising digital information, e.g. bar codes, data matrix
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H01L2223/5442 2 comprising non digital, non alphanumeric information, e.g. symbols
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H01L2223/54426 2 for alignment
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H01L2223/54433 2 containing identification or tracking information
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H01L2223/5444 3 for electrical read out
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H01L2223/54446 4 Wireless electrical read out
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H01L2223/54453 2 for use prior to dicing
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H01L2223/5446 3 Located in scribe lines
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H01L2223/54466 3 Located in a dummy or reference die
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H01L2223/54473 2 for use after dicing
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H01L2223/5448 3 Located on chip prior to dicing and remaining on chip after dicing
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H01L2223/54486 3 Located on package parts, e.g. encapsulation, leads, package substrate
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H01L2223/54493 2 Peripheral marks on wafers, e.g. orientation flats, notches, lot number
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H01L2223/58 1 Structural electrical arrangements for semiconductor devices not otherwise provided for
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H01L2223/64 2 Impedance arrangements
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H01L2223/66 3 High-frequency adaptations
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H01L2223/6605 4 High-frequency electrical connections
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H01L2223/6611 5 Wire connections
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H01L2223/6616 5 Vertical connections, e.g. vias
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H01L2223/6622 6 Coaxial feed-throughs in active or passive substrates
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H01L2223/6627 5 Waveguides, e.g. microstrip line, strip line, coplanar line
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H01L2223/6633 6 Transition between different waveguide types
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H01L2223/6638 5 Differential pair signal lines
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H01L2223/6644 4 Packaging aspects of high-frequency amplifiers (amplifiers per se H03F)
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H01L2223/665 5 Bias feed arrangements
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H01L2223/6655 5 Matching arrangements, e.g. arrangement of inductive and capacitive components
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H01L2223/6661 4 for passive devices (passive components per se H01L28/00)
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H01L2223/6666 5 for decoupling, e.g. bypass capacitors
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H01L2223/6672 5 for integrated passive components, e.g. semiconductor device with passive components only (integrated circuits with passive components only per se H01L27/01)
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H01L2223/6677 5 for antenna, e.g. antenna included within housing of semiconductor device (antennas per se H01Q)
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H01L2223/6683 4 for monolithic microwave integrated circuit [MMIC]
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H01L2223/6688 4 Mixed frequency adaptations, i.e. for operation at different frequencies
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H01L2223/6694 4 Optical signal interface included within high-frequency semiconductor device housing
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H01L2224/00 0 Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01 1 Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/02 2 Bonding areas; Manufacturing methods related thereto
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H01L2224/0212 3 Auxiliary members for bonding areas, e.g. spacers
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H01L2224/02122 4 being formed on the semiconductor or solid-state body
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H01L2224/02123 5 inside the bonding area
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H01L2224/02125 6 Reinforcing structures
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H01L2224/02126 7 Collar structures
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H01L2224/0213 6 Alignment aids
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H01L2224/02135 6 Flow barrier
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H01L2224/0214 6 Structure of the auxiliary member
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H01L2224/02141 7 Multilayer auxiliary member
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H01L2224/02145 6 Shape of the auxiliary member
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H01L2224/0215 6 Material of the auxiliary member
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H01L2224/02163 5 on the bonding area
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H01L2224/02165 6 Reinforcing structures
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H01L2224/02166 7 Collar structures
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H01L2224/0217 6 Alignment aids
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H01L2224/02175 6 Flow barrier
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H01L2224/0218 6 Structure of the auxiliary member
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H01L2224/02181 7 Multilayer auxiliary member
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H01L2224/02185 6 Shape of the auxiliary member
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H01L2224/0219 6 Material of the auxiliary member
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H01L2224/022 6 Protective coating, i.e. protective bond-through coating
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H01L2224/02205 7 Structure of the protective coating
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H01L2224/02206 8 Multilayer protective coating
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H01L2224/0221 7 Shape of the protective coating
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H01L2224/02215 7 Material of the protective coating
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H01L2224/02233 5 not in direct contact with the bonding area
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H01L2224/02235 6 Reinforcing structures
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H01L2224/0224 6 Alignment aids
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H01L2224/02245 6 Flow barrier
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H01L2224/0225 6 Structure of the auxiliary member
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H01L2224/02251 7 Multilayer auxiliary member
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H01L2224/02255 6 Shape of the auxiliary member
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H01L2224/0226 6 Material of the auxiliary member
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H01L2224/023 3 Redistribution layers [RDL] for bonding areas
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H01L2224/0231 4 Manufacturing methods of the redistribution layers
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H01L2224/02311 5 Additive methods
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H01L2224/02313 5 Subtractive methods
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H01L2224/02315 5 Self-assembly processes
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H01L2224/02317 5 by local deposition
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H01L2224/02319 5 by using a preform
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H01L2224/02321 5 Reworking
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H01L2224/0233 4 Structure of the redistribution layers
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H01L2224/02331 5 Multilayer structure
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H01L2224/02333 5 being a bump
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H01L2224/02335 5 Free-standing redistribution layers
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H01L2224/0235 4 Shape of the redistribution layers
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H01L2224/02351 5 comprising interlocking features
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H01L2224/0236 4 Shape of the insulating layers therebetween
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H01L2224/0237 4 Disposition of the redistribution layers
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H01L2224/02371 5 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
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H01L2224/02372 5 connecting to a via connection in the semiconductor or solid-state body
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H01L2224/02373 5 Layout of the redistribution layers
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H01L2224/02375 5 Top view
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H01L2224/02377 5 Fan-in arrangement
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H01L2224/02379 5 Fan-out arrangement
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H01L2224/02381 5 Side view
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H01L2224/0239 4 Material of the redistribution layers
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H01L2224/024 4 Material of the insulating layers therebetween
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H01L2224/03 3 Manufacturing methods
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H01L2224/03001 4 Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/03002 5 for supporting the semiconductor or solid-state body
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H01L2224/03003 5 for holding or transferring a preform
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H01L2224/03005 5 for aligning the bonding area, e.g. marks, spacers
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H01L2224/03009 5 for protecting parts during manufacture
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H01L2224/03011 4 Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
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H01L2224/03013 5 for holding or confining the bonding area, e.g. solder flow barrier
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H01L2224/03015 5 for aligning the bonding area, e.g. marks, spacers
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H01L2224/03019 5 for protecting parts during the process
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H01L2224/031 4 Manufacture and pre-treatment of the bonding area preform
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H01L2224/0311 5 Shaping
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H01L2224/0312 5 Applying permanent coating
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H01L2224/033 4 by local deposition of the material of the bonding area
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H01L2224/0331 5 in liquid form
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H01L2224/03312 6 Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
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H01L2224/03318 6 by dispensing droplets
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H01L2224/0332 6 Screen printing, i.e. using a stencil
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H01L2224/0333 5 in solid form
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H01L2224/03332 6 using a powder
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H01L2224/03334 6 using a preform
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H01L2224/034 4 by blanket deposition of the material of the bonding area
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H01L2224/0341 5 in liquid form
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H01L2224/03416 6 Spin coating
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H01L2224/03418 6 Spray coating
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H01L2224/0342 6 Curtain coating
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H01L2224/03422 6 by dipping, e.g. in a solder bath (hot-dipping C23C2/00)
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H01L2224/03424 6 Immersion coating, e.g. in a solder bath (immersion processes C23C2/00)
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H01L2224/03426 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/03428 6 Wave coating
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H01L2224/0343 5 in solid form
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H01L2224/03436 6 Lamination of a preform, e.g. foil, sheet or layer
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H01L2224/03438 7 the preform being at least partly pre-patterned
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H01L2224/0344 7 by transfer printing
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H01L2224/03442 6 using a powder
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H01L2224/03444 5 in gaseous form
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H01L2224/0345 6 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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H01L2224/03452 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/0346 5 Plating
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H01L2224/03462 6 Electroplating
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H01L2224/03464 6 Electroless plating
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H01L2224/03466 5 Conformal deposition, i.e. blanket deposition of a conformal layer on a patterned surface
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H01L2224/0347 4 using a lift-off mask
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H01L2224/03472 5 Profile of the lift-off mask
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H01L2224/03474 5 Multilayer masks
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H01L2224/0348 5 Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
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H01L2224/035 4 by chemical or physical modification of a pre-existing or pre-deposited material
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H01L2224/03502 5 Pre-existing or pre-deposited material
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H01L2224/03505 5 Sintering
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H01L2224/0351 5 Anodisation
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H01L2224/03515 5 Curing and solidification, e.g. of a photosensitive material
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H01L2224/0352 5 Self-assembly, e.g. self-agglomeration of the material in a fluid
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H01L2224/03522 6 Auxiliary means therefor, e.g. for self-assembly activation
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H01L2224/03524 6 with special adaptation of the surface of the body to be connected or of an auxiliary substrate, e.g. surface shape specially adapted for the self-assembly process
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H01L2224/0355 5 Selective modification
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H01L2224/03552 6 using a laser or a focussed ion beam [FIB]
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H01L2224/03554 7 Stereolithography, i.e. solidification of a pattern defined by a laser trace in a photosensitive resin
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H01L2224/036 4 by patterning a pre-deposited material (treatment of parts prior to assembly of the devices H01L21/48)
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H01L2224/03602 5 Mechanical treatment, e.g. polishing, grinding
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H01L2224/0361 5 Physical or chemical etching
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H01L2224/03612 6 by physical means only
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H01L2224/03614 6 by chemical means only
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H01L2224/03616 6 Chemical mechanical polishing [CMP]
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H01L2224/03618 5 with selective exposure, development and removal of a photosensitive material, e.g. of a photosensitive conductive resin
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H01L2224/0362 6 Photolithography
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H01L2224/03622 5 using masks
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H01L2224/0363 5 using a laser or a focused ion beam [FIB]
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H01L2224/03632 6 Ablation by means of a laser or focused ion beam [FIB]
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H01L2224/037 4 involving monitoring, e.g. feedback loop
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H01L2224/038 4 Post-treatment of the bonding area
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H01L2224/0381 5 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/0382 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/03821 6 Spray coating
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H01L2224/03822 6 by dipping, e.g. in a solder bath
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H01L2224/03823 6 Immersion coating, e.g. in a solder bath
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H01L2224/03824 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/03825 6 Plating, e.g. electroplating, electroless plating
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H01L2224/03826 6 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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H01L2224/03827 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/03828 5 Applying flux
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H01L2224/03829 5 Applying a precursor material
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H01L2224/0383 5 Reworking, e.g. shaping (reflowing H01L2224/03849)
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H01L2224/03831 6 involving a chemical process, e.g. etching the bonding area
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H01L2224/0384 6 involving a mechanical process, e.g. planarising the bonding area
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H01L2224/03845 6 Chemical mechanical polishing [CMP]
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H01L2224/03848 5 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/03849 6 Reflowing
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H01L2224/039 4 Methods of manufacturing bonding areas involving a specific sequence of method steps
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H01L2224/03901 5 with repetition of the same manufacturing step
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H01L2224/03902 6 Multiple masking steps
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H01L2224/03903 7 using different masks
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H01L2224/03906 7 with modification of the same mask
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H01L2224/0391 5 Forming a passivation layer after forming the bonding area
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H01L2224/03912 5 the bump being used as a mask for patterning the bonding area
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H01L2224/03914 5 the bonding area, e.g. under bump metallisation [UBM], being used as a mask for patterning other parts
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H01L2224/03916 5 a passivation layer being used as a mask for patterning the bonding area
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H01L2224/0392 5 specifically adapted to include a probing step
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H01L2224/03921 6 by repairing the bonding area damaged by the probing step
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H01L2224/04 3 Structure, shape, material or disposition of the bonding areas prior to the connecting process
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H01L2224/0401 4 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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H01L2224/04026 4 Bonding areas specifically adapted for layer connectors
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H01L2224/04034 4 Bonding areas specifically adapted for strap connectors
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H01L2224/04042 4 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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H01L2224/0405 4 Bonding areas specifically adapted for tape automated bonding [TAB] connectors
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H01L2224/04073 4 Bonding areas specifically adapted for connectors of different types
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H01L2224/04105 4 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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H01L2224/05 4 of an individual bonding area
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H01L2224/05001 5 Internal layers
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H01L2224/05005 6 Structure
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H01L2224/05006 7 Dual damascene structure
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H01L2224/05007 7 comprising a core and a coating
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H01L2224/05008 7 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
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H01L2224/05009 7 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
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H01L2224/0501 6 Shape
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H01L2224/05011 7 comprising apertures or cavities
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H01L2224/05012 7 in top view
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H01L2224/05013 8 being rectangular
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H01L2224/05014 8 being square
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H01L2224/05015 8 being circular or elliptic
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H01L2224/05016 7 in side view
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H01L2224/05017 8 comprising protrusions or indentations
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H01L2224/05018 8 being a conformal layer on a patterned surface
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H01L2224/05019 8 being a non conformal layer on a patterned surface
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H01L2224/0502 6 Disposition
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H01L2224/05022 7 the internal layer being at least partially embedded in the surface
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H01L2224/05023 7 the whole internal layer protruding from the surface
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H01L2224/05024 7 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
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H01L2224/05025 7 the internal layer being disposed on a via connection of the semiconductor or solid-state body
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H01L2224/05026 7 the internal layer being disposed in a recess of the surface
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H01L2224/05027 8 the internal layer extending out of an opening
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H01L2224/05073 6 Single internal layer
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H01L2224/05075 6 Plural internal layers
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H01L2224/05076 7 being mutually engaged together, e.g. through inserts
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H01L2224/05078 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/0508 7 being stacked
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H01L2224/05082 8 Two-layer arrangements
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H01L2224/05083 8 Three-layer arrangements
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H01L2224/05084 8 Four-layer arrangements
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H01L2224/05085 8 with additional elements, e.g. vias arrays, interposed between the stacked layers
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H01L2224/05086 9 Structure of the additional element
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H01L2224/05087 10 being a via with at least a lining layer
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H01L2224/05088 9 Shape of the additional element
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H01L2224/05089 9 Disposition of the additional element
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H01L2224/0509 10 of a single via
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H01L2224/05091 11 at the center of the internal layers
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H01L2224/05092 11 at the periphery of the internal layers
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H01L2224/05093 10 of a plurality of vias
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H01L2224/05094 11 at the center of the internal layers
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H01L2224/05095 11 at the periphery of the internal layers
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H01L2224/05096 11 Uniform arrangement, i.e. array
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H01L2224/05097 11 Random arrangement
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H01L2224/05098 9 Material of the additional element
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H01L2224/05099 6 Material
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H01L2224/051 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05101 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05105 9 Gallium [Ga] as principal constituent
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H01L2224/05109 9 Indium [In] as principal constituent
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H01L2224/05111 9 Tin [Sn] as principal constituent
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H01L2224/05113 9 Bismuth [Bi] as principal constituent
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H01L2224/05114 9 Thallium [Tl] as principal constituent
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H01L2224/05116 9 Lead [Pb] as principal constituent
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H01L2224/05117 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05118 9 Zinc [Zn] as principal constituent
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H01L2224/0512 9 Antimony [Sb] as principal constituent
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H01L2224/05123 9 Magnesium [Mg] as principal constituent
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H01L2224/05124 9 Aluminium [Al] as principal constituent
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H01L2224/05138 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05139 9 Silver [Ag] as principal constituent
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H01L2224/05144 9 Gold [Au] as principal constituent
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H01L2224/05147 9 Copper [Cu] as principal constituent
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H01L2224/05149 9 Manganese [Mn] as principal constituent
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H01L2224/05155 9 Nickel [Ni] as principal constituent
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H01L2224/05157 9 Cobalt [Co] as principal constituent
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H01L2224/0516 9 Iron [Fe] as principal constituent
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H01L2224/05163 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05164 9 Palladium [Pd] as principal constituent
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H01L2224/05166 9 Titanium [Ti] as principal constituent
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H01L2224/05169 9 Platinum [Pt] as principal constituent
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H01L2224/0517 9 Zirconium [Zr] as principal constituent
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H01L2224/05171 9 Chromium [Cr] as principal constituent
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H01L2224/05172 9 Vanadium [V] as principal constituent
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H01L2224/05173 9 Rhodium [Rh] as principal constituent
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H01L2224/05176 9 Ruthenium [Ru] as principal constituent
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H01L2224/05178 9 Iridium [Ir] as principal constituent
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H01L2224/05179 9 Niobium [Nb] as principal constituent
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H01L2224/0518 9 Molybdenum [Mo] as principal constituent
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H01L2224/05181 9 Tantalum [Ta] as principal constituent
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H01L2224/05183 9 Rhenium [Re] as principal constituent
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H01L2224/05184 9 Tungsten [W] as principal constituent
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H01L2224/05186 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05187 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05188)
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H01L2224/05188 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0519 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05191 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05193 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/051 - H01L2224/05191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05194 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/051 - H01L2224/05191
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H01L2224/05195 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/051 - H01L2224/05191
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H01L2224/05198 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/05199 8 Material of the matrix
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H01L2224/052 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05201 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05205 11 Gallium [Ga] as principal constituent
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H01L2224/05209 11 Indium [In] as principal constituent
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H01L2224/05211 11 Tin [Sn] as principal constituent
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H01L2224/05213 11 Bismuth [Bi] as principal constituent
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H01L2224/05214 11 Thallium [Tl] as principal constituent
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H01L2224/05216 11 Lead [Pb] as principal constituent
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H01L2224/05217 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05218 11 Zinc [Zn] as principal constituent
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H01L2224/0522 11 Antimony [Sb] as principal constituent
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H01L2224/05223 11 Magnesium [Mg] as principal constituent
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H01L2224/05224 11 Aluminium [Al] as principal constituent
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H01L2224/05238 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05239 11 Silver [Ag] as principal constituent
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H01L2224/05244 11 Gold [Au] as principal constituent
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H01L2224/05247 11 Copper [Cu] as principal constituent
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H01L2224/05249 11 Manganese [Mn] as principal constituent
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H01L2224/05255 11 Nickel [Ni] as principal constituent
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H01L2224/05257 11 Cobalt [Co] as principal constituent
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H01L2224/0526 11 Iron [Fe] as principal constituent
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H01L2224/05263 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05264 11 Palladium [Pd] as principal constituent
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H01L2224/05266 11 Titanium [Ti] as principal constituent
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H01L2224/05269 11 Platinum [Pt] as principal constituent
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H01L2224/0527 11 Zirconium [Zr] as principal constituent
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H01L2224/05271 11 Chromium [Cr] as principal constituent
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H01L2224/05272 11 Vanadium [V] as principal constituent
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H01L2224/05273 11 Rhodium [Rh] as principal constituent
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H01L2224/05276 11 Ruthenium [Ru] as principal constituent
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H01L2224/05278 11 Iridium [Ir] as principal constituent
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H01L2224/05279 11 Niobium [Nb] as principal constituent
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H01L2224/0528 11 Molybdenum [Mo] as principal constituent
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H01L2224/05281 11 Tantalum [Ta] as principal constituent
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H01L2224/05283 11 Rhenium [Re] as principal constituent
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H01L2224/05284 11 Tungsten [W] as principal constituent
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H01L2224/05286 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05287 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05288)
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H01L2224/05288 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0529 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05291 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05293 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/052 - H01L2224/05291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05294 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/052 - H01L2224/05291
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H01L2224/05295 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/052 - H01L2224/05291
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H01L2224/05298 8 Fillers
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H01L2224/05299 9 Base material
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H01L2224/053 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05301 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05305 12 Gallium [Ga] as principal constituent
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H01L2224/05309 12 Indium [In] as principal constituent
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H01L2224/05311 12 Tin [Sn] as principal constituent
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H01L2224/05313 12 Bismuth [Bi] as principal constituent
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H01L2224/05314 12 Thallium [Tl] as principal constituent
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H01L2224/05316 12 Lead [Pb] as principal constituent
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H01L2224/05317 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05318 12 Zinc [Zn] as principal constituent
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H01L2224/0532 12 Antimony [Sb] as principal constituent
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H01L2224/05323 12 Magnesium [Mg] as principal constituent
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H01L2224/05324 12 Aluminium [Al] as principal constituent
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H01L2224/05338 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05339 12 Silver [Ag] as principal constituent
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H01L2224/05344 12 Gold [Au] as principal constituent
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H01L2224/05347 12 Copper [Cu] as principal constituent
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H01L2224/05349 12 Manganese [Mn] as principal constituent
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H01L2224/05355 12 Nickel [Ni] as principal constituent
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H01L2224/05357 12 Cobalt [Co] as principal constituent
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H01L2224/0536 12 Iron [Fe] as principal constituent
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H01L2224/05363 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05364 12 Palladium [Pd] as principal constituent
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H01L2224/05366 12 Titanium [Ti] as principal constituent
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H01L2224/05369 12 Platinum [Pt] as principal constituent
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H01L2224/0537 12 Zirconium [Zr] as principal constituent
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H01L2224/05371 12 Chromium [Cr] as principal constituent
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H01L2224/05372 12 Vanadium [V] as principal constituent
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H01L2224/05373 12 Rhodium [Rh] as principal constituent
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H01L2224/05376 12 Ruthenium [Ru] as principal constituent
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H01L2224/05378 12 Iridium [Ir] as principal constituent
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H01L2224/05379 12 Niobium [Nb] as principal constituent
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H01L2224/0538 12 Molybdenum [Mo] as principal constituent
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H01L2224/05381 12 Tantalum [Ta] as principal constituent
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H01L2224/05383 12 Rhenium [Re] as principal constituent
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H01L2224/05384 12 Tungsten [W] as principal constituent
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H01L2224/05386 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05387 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05388)
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H01L2224/05388 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0539 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05391 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05393 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/053 - H01L2224/05391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05394 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/053 - H01L2224/05391
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H01L2224/05395 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/053 - H01L2224/05391
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H01L2224/05398 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/05399 9 Coating material
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H01L2224/054 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05401 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05405 12 Gallium [Ga] as principal constituent
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H01L2224/05409 12 Indium [In] as principal constituent
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H01L2224/05411 12 Tin [Sn] as principal constituent
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H01L2224/05413 12 Bismuth [Bi] as principal constituent
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H01L2224/05414 12 Thallium [Tl] as principal constituent
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H01L2224/05416 12 Lead [Pb] as principal constituent
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H01L2224/05417 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05418 12 Zinc [Zn] as principal constituent
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H01L2224/0542 12 Antimony [Sb] as principal constituent
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H01L2224/05423 12 Magnesium [Mg] as principal constituent
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H01L2224/05424 12 Aluminium [Al] as principal constituent
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H01L2224/05438 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05439 12 Silver [Ag] as principal constituent
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H01L2224/05444 12 Gold [Au] as principal constituent
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H01L2224/05447 12 Copper [Cu] as principal constituent
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H01L2224/05449 12 Manganese [Mn] as principal constituent
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H01L2224/05455 12 Nickel [Ni] as principal constituent
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H01L2224/05457 12 Cobalt [Co] as principal constituent
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H01L2224/0546 12 Iron [Fe] as principal constituent
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H01L2224/05463 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05464 12 Palladium [Pd] as principal constituent
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H01L2224/05466 12 Titanium [Ti] as principal constituent
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H01L2224/05469 12 Platinum [Pt] as principal constituent
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H01L2224/0547 12 Zirconium [Zr] as principal constituent
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H01L2224/05471 12 Chromium [Cr] as principal constituent
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H01L2224/05472 12 Vanadium [V] as principal constituent
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H01L2224/05473 12 Rhodium [Rh] as principal constituent
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H01L2224/05476 12 Ruthenium [Ru] as principal constituent
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H01L2224/05478 12 Iridium [Ir] as principal constituent
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H01L2224/05479 12 Niobium [Nb] as principal constituent
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H01L2224/0548 12 Molybdenum [Mo] as principal constituent
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H01L2224/05481 12 Tantalum [Ta] as principal constituent
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H01L2224/05483 12 Rhenium [Re] as principal constituent
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H01L2224/05484 12 Tungsten [W] as principal constituent
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H01L2224/05486 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05487 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05488)
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H01L2224/05488 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0549 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05491 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05493 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/054 - H01L2224/05491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05494 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/054 - H01L2224/05491
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H01L2224/05495 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/054 - H01L2224/05491
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H01L2224/05498 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/05499 9 Shape or distribution of the fillers
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H01L2224/0554 5 External layer
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H01L2224/05541 6 Structure
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H01L2224/05546 7 Dual damascene structure
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H01L2224/05547 7 comprising a core and a coating
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H01L2224/05548 7 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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H01L2224/0555 6 Shape
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H01L2224/05551 7 comprising apertures or cavities
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H01L2224/05552 7 in top view
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H01L2224/05553 8 being rectangular
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H01L2224/05554 8 being square
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H01L2224/05555 8 being circular or elliptic
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H01L2224/05556 7 in side view
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H01L2224/05557 8 comprising protrusions or indentations
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H01L2224/05558 8 conformal layer on a patterned surface
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H01L2224/05559 8 non conformal layer on a patterned surface
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H01L2224/0556 6 Disposition
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H01L2224/05561 7 On the entire surface of the internal layer
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H01L2224/05562 7 On the entire exposed surface of the internal layer
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H01L2224/05563 7 Only on parts of the surface of the internal layer
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H01L2224/05564 8 Only on the bonding interface of the bonding area
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H01L2224/05565 8 Only outside the bonding interface of the bonding area
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H01L2224/05566 8 Both on and outside the bonding interface of the bonding area
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H01L2224/05567 7 the external layer being at least partially embedded in the surface
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H01L2224/05568 7 the whole external layer protruding from the surface
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H01L2224/05569 7 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
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H01L2224/0557 7 the external layer being disposed on a via connection of the semiconductor or solid-state body
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H01L2224/05571 7 the external layer being disposed in a recess of the surface
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H01L2224/05572 8 the external layer extending out of an opening
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H01L2224/05573 6 Single external layer
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H01L2224/05575 6 Plural external layers
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H01L2224/05576 7 being mutually engaged together, e.g. through inserts
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H01L2224/05578 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/0558 7 being stacked
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H01L2224/05582 8 Two-layer coating
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H01L2224/05583 8 Three-layer coating
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H01L2224/05584 8 Four-layer coating
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H01L2224/05599 6 Material
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H01L2224/056 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05601 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05605 9 Gallium [Ga] as principal constituent
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H01L2224/05609 9 Indium [In] as principal constituent
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H01L2224/05611 9 Tin [Sn] as principal constituent
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H01L2224/05613 9 Bismuth [Bi] as principal constituent
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H01L2224/05614 9 Thallium [Tl] as principal constituent
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H01L2224/05616 9 Lead [Pb] as principal constituent
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H01L2224/05617 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05618 9 Zinc [Zn] as principal constituent
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H01L2224/0562 9 Antimony [Sb] as principal constituent
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H01L2224/05623 9 Magnesium [Mg] as principal constituent
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H01L2224/05624 9 Aluminium [Al] as principal constituent
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H01L2224/05638 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05639 9 Silver [Ag] as principal constituent
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H01L2224/05644 9 Gold [Au] as principal constituent
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H01L2224/05647 9 Copper [Cu] as principal constituent
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H01L2224/05649 9 Manganese [Mn] as principal constituent
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H01L2224/05655 9 Nickel [Ni] as principal constituent
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H01L2224/05657 9 Cobalt [Co] as principal constituent
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H01L2224/0566 9 Iron [Fe] as principal constituent
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H01L2224/05663 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05664 9 Palladium [Pd] as principal constituent
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H01L2224/05666 9 Titanium [Ti] as principal constituent
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H01L2224/05669 9 Platinum [Pt] as principal constituent
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H01L2224/0567 9 Zirconium [Zr] as principal constituent
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H01L2224/05671 9 Chromium [Cr] as principal constituent
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H01L2224/05672 9 Vanadium [V] as principal constituent
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H01L2224/05673 9 Rhodium [Rh] as principal constituent
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H01L2224/05676 9 Ruthenium [Ru] as principal constituent
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H01L2224/05678 9 Iridium [Ir] as principal constituent
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H01L2224/05679 9 Niobium [Nb] as principal constituent
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H01L2224/0568 9 Molybdenum [Mo] as principal constituent
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H01L2224/05681 9 Tantalum [Ta] as principal constituent
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H01L2224/05683 9 Rhenium [Re] as principal constituent
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H01L2224/05684 9 Tungsten [W] as principal constituent
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H01L2224/05686 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05687 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05688)
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H01L2224/05688 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0569 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05691 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05693 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/056 - H01L2224/05691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05694 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/056 - H01L2224/05691
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H01L2224/05695 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/056 - H01L2224/05691
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H01L2224/05698 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/05699 8 Material of the matrix
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H01L2224/057 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05701 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05705 11 Gallium [Ga] as principal constituent
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H01L2224/05709 11 Indium [In] as principal constituent
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H01L2224/05711 11 Tin [Sn] as principal constituent
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H01L2224/05713 11 Bismuth [Bi] as principal constituent
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H01L2224/05714 11 Thallium [Tl] as principal constituent
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H01L2224/05716 11 Lead [Pb] as principal constituent
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H01L2224/05717 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05718 11 Zinc [Zn] as principal constituent
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H01L2224/0572 11 Antimony [Sb] as principal constituent
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H01L2224/05723 11 Magnesium [Mg] as principal constituent
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H01L2224/05724 11 Aluminium [Al] as principal constituent
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H01L2224/05738 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05739 11 Silver [Ag] as principal constituent
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H01L2224/05744 11 Gold [Au] as principal constituent
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H01L2224/05747 11 Copper [Cu] as principal constituent
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H01L2224/05749 11 Manganese [Mn] as principal constituent
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H01L2224/05755 11 Nickel [Ni] as principal constituent
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H01L2224/05757 11 Cobalt [Co] as principal constituent
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H01L2224/0576 11 Iron [Fe] as principal constituent
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H01L2224/05763 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05764 11 Palladium [Pd] as principal constituent
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H01L2224/05766 11 Titanium [Ti] as principal constituent
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H01L2224/05769 11 Platinum [Pt] as principal constituent
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H01L2224/0577 11 Zirconium [Zr] as principal constituent
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H01L2224/05771 11 Chromium [Cr] as principal constituent
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H01L2224/05772 11 Vanadium [V] as principal constituent
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H01L2224/05773 11 Rhodium [Rh] as principal constituent
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H01L2224/05776 11 Ruthenium [Ru] as principal constituent
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H01L2224/05778 11 Iridium [Ir] as principal constituent
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H01L2224/05779 11 Niobium [Nb] as principal constituent
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H01L2224/0578 11 Molybdenum [Mo] as principal constituent
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H01L2224/05781 11 Tantalum [Ta] as principal constituent
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H01L2224/05783 11 Rhenium [Re] as principal constituent
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H01L2224/05784 11 Tungsten [W] as principal constituent
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H01L2224/05786 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05787 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05788)
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H01L2224/05788 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0579 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05791 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05793 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/057 - H01L2224/05791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05794 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/057 - H01L2224/05791
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H01L2224/05795 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/057 - H01L2224/05791
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H01L2224/05798 8 Fillers
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H01L2224/05799 9 Base material
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H01L2224/058 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05801 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05805 12 Gallium [Ga] as principal constituent
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H01L2224/05809 12 Indium [In] as principal constituent
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H01L2224/05811 12 Tin [Sn] as principal constituent
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H01L2224/05813 12 Bismuth [Bi] as principal constituent
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H01L2224/05814 12 Thallium [Tl] as principal constituent
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H01L2224/05816 12 Lead [Pb] as principal constituent
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H01L2224/05817 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05818 12 Zinc [Zn] as principal constituent
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H01L2224/0582 12 Antimony [Sb] as principal constituent
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H01L2224/05823 12 Magnesium [Mg] as principal constituent
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H01L2224/05824 12 Aluminium [Al] as principal constituent
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H01L2224/05838 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05839 12 Silver [Ag] as principal constituent
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H01L2224/05844 12 Gold [Au] as principal constituent
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H01L2224/05847 12 Copper [Cu] as principal constituent
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H01L2224/05849 12 Manganese [Mn] as principal constituent
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H01L2224/05855 12 Nickel [Ni] as principal constituent
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H01L2224/05857 12 Cobalt [Co] as principal constituent
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H01L2224/0586 12 Iron [Fe] as principal constituent
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H01L2224/05863 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05864 12 Palladium [Pd] as principal constituent
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H01L2224/05866 12 Titanium [Ti] as principal constituent
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H01L2224/05869 12 Platinum [Pt] as principal constituent
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H01L2224/0587 12 Zirconium [Zr] as principal constituent
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H01L2224/05871 12 Chromium [Cr] as principal constituent
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H01L2224/05872 12 Vanadium [V] as principal constituent
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H01L2224/05873 12 Rhodium [Rh] as principal constituent
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H01L2224/05876 12 Ruthenium [Ru] as principal constituent
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H01L2224/05878 12 Iridium [Ir] as principal constituent
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H01L2224/05879 12 Niobium [Nb] as principal constituent
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H01L2224/0588 12 Molybdenum [Mo] as principal constituent
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H01L2224/05881 12 Tantalum [Ta] as principal constituent
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H01L2224/05883 12 Rhenium [Re] as principal constituent
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H01L2224/05884 12 Tungsten [W] as principal constituent
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H01L2224/05886 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05887 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05888)
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H01L2224/05888 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0589 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05891 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05893 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/058 - H01L2224/05891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05894 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/058 - H01L2224/05891
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H01L2224/05895 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/058 - H01L2224/05891
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H01L2224/05898 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/05899 9 Coating material
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H01L2224/059 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/05901 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/05905 12 Gallium [Ga] as principal constituent
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H01L2224/05909 12 Indium [In] as principal constituent
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H01L2224/05911 12 Tin [Sn] as principal constituent
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H01L2224/05913 12 Bismuth [Bi] as principal constituent
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H01L2224/05914 12 Thallium [Tl] as principal constituent
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H01L2224/05916 12 Lead [Pb] as principal constituent
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H01L2224/05917 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/05918 12 Zinc [Zn] as principal constituent
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H01L2224/0592 12 Antimony [Sb] as principal constituent
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H01L2224/05923 12 Magnesium [Mg] as principal constituent
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H01L2224/05924 12 Aluminium [Al] as principal constituent
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H01L2224/05938 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/05939 12 Silver [Ag] as principal constituent
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H01L2224/05944 12 Gold [Au] as principal constituent
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H01L2224/05947 12 Copper [Cu] as principal constituent
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H01L2224/05949 12 Manganese [Mn] as principal constituent
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H01L2224/05955 12 Nickel [Ni] as principal constituent
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H01L2224/05957 12 Cobalt [Co] as principal constituent
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H01L2224/0596 12 Iron [Fe] as principal constituent
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H01L2224/05963 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/05964 12 Palladium [Pd] as principal constituent
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H01L2224/05966 12 Titanium [Ti] as principal constituent
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H01L2224/05969 12 Platinum [Pt] as principal constituent
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H01L2224/0597 12 Zirconium [Zr] as principal constituent
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H01L2224/05971 12 Chromium [Cr] as principal constituent
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H01L2224/05972 12 Vanadium [V] as principal constituent
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H01L2224/05973 12 Rhodium [Rh] as principal constituent
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H01L2224/05976 12 Ruthenium [Ru] as principal constituent
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H01L2224/05978 12 Iridium [Ir] as principal constituent
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H01L2224/05979 12 Niobium [Nb] as principal constituent
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H01L2224/0598 12 Molybdenum [Mo] as principal constituent
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H01L2224/05981 12 Tantalum [Ta] as principal constituent
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H01L2224/05983 12 Rhenium [Re] as principal constituent
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H01L2224/05984 12 Tungsten [W] as principal constituent
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H01L2224/05986 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/05987 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/05988)
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H01L2224/05988 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/0599 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/05991 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/05993 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/059 - H01L2224/05991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/05994 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/059 - H01L2224/05991
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H01L2224/05995 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/059 - H01L2224/05991
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H01L2224/05998 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/05999 9 Shape or distribution of the fillers
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H01L2224/06 4 of a plurality of bonding areas
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H01L2224/0601 5 Structure
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H01L2224/0603 6 Bonding areas having different sizes, e.g. different heights or widths
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H01L2224/0605 5 Shape
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H01L2224/06051 6 Bonding areas having different shapes
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H01L2224/061 5 Disposition
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H01L2224/06102 6 the bonding areas being at different heights
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H01L2224/0612 6 Layout
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H01L2224/0613 7 Square or rectangular array
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H01L2224/06131 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/06132 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/06133 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/06134 8 covering only portions of the surface to be connected
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H01L2224/06135 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/06136 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/06137 8 with specially adapted redistribution layers [RDL]
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H01L2224/06138 9 being disposed in a single wiring level, i.e. planar layout
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H01L2224/06139 9 being disposed in different wiring levels, i.e. resurf layout
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H01L2224/0614 7 Circular array, i.e. array with radial symmetry
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H01L2224/06141 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/06142 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/06143 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/06144 8 covering only portions of the surface to be connected
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H01L2224/06145 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/06146 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/06147 8 with specially adapted redistribution layers [RDL]
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H01L2224/06148 9 being disposed in a single wiring level, i.e. planar layout
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H01L2224/06149 9 being disposed in different wiring levels, i.e. resurf layout
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H01L2224/0615 7 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
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H01L2224/06151 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/06152 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/06153 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/06154 8 covering only portions of the surface to be connected
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H01L2224/06155 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/06156 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/06157 8 with specially adapted redistribution layers [RDL]
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H01L2224/06158 9 being disposed in a single wiring level, i.e. planar layout
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H01L2224/06159 9 being disposed in different wiring levels, i.e. resurf layout
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H01L2224/0616 7 Random array, i.e. array with no symmetry
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H01L2224/06163 8 with a staggered arrangement
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H01L2224/06164 8 covering only portions of the surface to be connected
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H01L2224/06165 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/06166 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/06167 8 with specially adapted redistribution layers [RDL]
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H01L2224/06168 9 being disposed in a single wiring level, i.e. planar layout
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H01L2224/06169 9 being disposed in different wiring levels, i.e. resurf layout
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H01L2224/06177 7 Combinations of arrays with different layouts
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H01L2224/06179 7 Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body
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H01L2224/0618 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/06181 7 On opposite sides of the body
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H01L2224/06182 8 with specially adapted redistribution layers [RDL]
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H01L2224/06183 7 On contiguous sides of the body
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H01L2224/06187 8 with specially adapted redistribution layers [RDL]
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H01L2224/06188 9 being disposed in a single wiring level, i.e. planar layout
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H01L2224/06189 9 being disposed in different wiring levels, i.e. resurf layout
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H01L2224/065 5 Material
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H01L2224/06505 6 Bonding areas having different materials
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H01L2224/0651 5 Function
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H01L2224/06515 6 Bonding areas having different functions
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H01L2224/06517 7 including bonding areas providing primarily mechanical bonding
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H01L2224/06519 7 including bonding areas providing primarily thermal dissipation
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H01L2224/07 3 Structure, shape, material or disposition of the bonding areas after the connecting process
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H01L2224/08 4 of an individual bonding area
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H01L2224/0801 5 Structure
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H01L2224/0805 5 Shape
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H01L2224/08052 6 in top view
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H01L2224/08053 7 being non uniform along the bonding area
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H01L2224/08054 7 being rectangular
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H01L2224/08055 7 being square
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H01L2224/08056 7 being circular or elliptic
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H01L2224/08057 6 in side view
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H01L2224/08058 7 being non uniform along the bonding area
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H01L2224/08059 7 comprising protrusions or indentations
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H01L2224/0807 6 of bonding interfaces, e.g. interlocking features
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H01L2224/081 5 Disposition
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H01L2224/08111 6 the bonding area being disposed in a recess of the surface of the body
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H01L2224/08112 6 the bonding area being at least partially embedded in the surface of the body
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H01L2224/08113 6 the whole bonding area protruding from the surface of the body
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H01L2224/0812 6 the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
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H01L2224/08121 7 the connected bonding areas being not aligned with respect to each other
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H01L2224/08123 7 the bonding area connecting directly to at least two bonding areas
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H01L2224/08135 7 the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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H01L2224/08137 8 the bodies being arranged next to each other, e.g. on a common substrate
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H01L2224/08145 8 the bodies being stacked
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H01L2224/08146 9 the bonding area connecting to a via connection in the body
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H01L2224/08147 9 the bonding area connecting to a bonding area disposed in a recess of the surface of the body
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H01L2224/08148 9 the bonding area connecting to a bonding area protruding from the surface of the body
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H01L2224/08151 7 the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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H01L2224/08153 8 the body and the item being arranged next to each other, e.g. on a common substrate
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H01L2224/08155 9 the item being non-metallic, e.g. being an insulating substrate with or without metallisation
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H01L2224/0816 10 the bonding area connecting to a pin of the item
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H01L2224/08163 10 the bonding area connecting to a potential ring of the item
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H01L2224/08165 10 the bonding area connecting to a via metallisation of the item
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H01L2224/08167 10 the bonding area connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/08168 10 the bonding area connecting to a bonding area protruding from the surface of the item
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H01L2224/08175 9 the item being metallic
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H01L2224/08183 10 the bonding area connecting to a potential ring of the item
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H01L2224/08187 10 the bonding area connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/08188 10 the bonding area connecting to a bonding area protruding from the surface of the item
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H01L2224/08195 9 the item being a discrete passive component
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H01L2224/08197 10 the bonding area connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/08198 10 the bonding area connecting to a bonding area protruding from the surface of the item
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H01L2224/08221 8 the body and the item being stacked
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H01L2224/08225 9 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/0823 10 the bonding area connecting to a pin of the item
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H01L2224/08233 10 the bonding area connecting to a potential ring of the item
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H01L2224/08235 10 the bonding area connecting to a via metallisation of the item
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H01L2224/08237 10 the bonding area connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/08238 10 the bonding area connecting to a bonding area protruding from the surface of the item
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H01L2224/08245 9 the item being metallic
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H01L2224/08253 10 the bonding area connecting to a potential ring of the item
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H01L2224/08257 10 the bonding area connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/08258 10 the bonding area connecting to a bonding area protruding from the surface of the item
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H01L2224/08265 9 the item being a discrete passive component
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H01L2224/08267 10 the bonding area connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/08268 10 the bonding area connecting to a bonding area protruding from the surface of the item
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H01L2224/085 5 Material
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H01L2224/08501 6 at the bonding interface
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H01L2224/08502 7 comprising an eutectic alloy
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H01L2224/08503 7 comprising an intermetallic compound
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H01L2224/08505 6 outside the bonding interface
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H01L2224/08506 7 comprising an eutectic alloy
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H01L2224/09 4 of a plurality of bonding areas
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H01L2224/0901 5 Structure
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H01L2224/0903 6 Bonding areas having different sizes, e.g. different diameters, heights or widths
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H01L2224/0905 5 Shape
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H01L2224/09051 6 Bonding areas having different shapes
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H01L2224/09055 7 of their bonding interfaces
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H01L2224/091 5 Disposition
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H01L2224/09102 6 the bonding areas being at different heights
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H01L2224/09103 7 on the semiconductor or solid-state body
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H01L2224/09104 7 outside the semiconductor or solid-state body
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H01L2224/0912 6 Layout (layout of bonding areas prior to the connecting process H01L2224/0612)
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H01L2224/0913 7 Square or rectangular array
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H01L2224/09132 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/09133 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/09134 8 covering only portions of the surface to be connected
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H01L2224/09135 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/0914 7 Circular array, i.e. array with radial symmetry
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H01L2224/09142 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/09143 8 with a staggered arrangement
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H01L2224/09144 8 covering only portions of the surface to be connected
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H01L2224/09145 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/0915 7 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
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H01L2224/09151 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/09152 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/09153 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/09154 8 covering only portions of the surface to be connected
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H01L2224/09155 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/09156 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/0916 7 Random array, i.e. array with no symmetry
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H01L2224/09163 8 with a staggered arrangement
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H01L2224/09164 8 covering only portions of the surface to be connected
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H01L2224/09165 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/09177 7 Combinations of arrays with different layouts
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H01L2224/09179 7 Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body
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H01L2224/0918 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/09181 7 On opposite sides of the body
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H01L2224/09183 7 On contiguous sides of the body
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H01L2224/095 5 Material
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H01L2224/09505 6 Bonding areas having different materials
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H01L2224/0951 5 Function
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H01L2224/09515 6 Bonding areas having different functions
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H01L2224/09517 7 including bonding areas providing primarily mechanical support
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H01L2224/09519 7 including bonding areas providing primarily thermal dissipation
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H01L2224/10 2 Bump connectors; Manufacturing methods related thereto
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H01L2224/1012 3 Auxiliary members for bump connectors, e.g. spacers
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H01L2224/10122 4 being formed on the semiconductor or solid-state body to be connected
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H01L2224/10125 5 Reinforcing structures
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H01L2224/10126 6 Bump collar
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H01L2224/10135 5 Alignment aids
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H01L2224/10145 5 Flow barriers
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H01L2224/10152 4 being formed on an item to be connected not being a semiconductor or solid-state body
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H01L2224/10155 5 Reinforcing structures
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H01L2224/10156 6 Bump collar
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H01L2224/10165 5 Alignment aids
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H01L2224/10175 5 Flow barriers
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H01L2224/11 3 Manufacturing methods
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H01L2224/11001 4 Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/11002 5 for supporting the semiconductor or solid-state body
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H01L2224/11003 5 for holding or transferring the bump preform
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H01L2224/11005 5 for aligning the bump connector, e.g. marks, spacers
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H01L2224/11009 5 for protecting parts during manufacture
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H01L2224/11011 4 Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
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H01L2224/11013 5 for holding or confining the bump connector, e.g. solder flow barrier
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H01L2224/11015 5 for aligning the bump connector, e.g. marks, spacers
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H01L2224/11019 5 for protecting parts during the process
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H01L2224/111 4 Manufacture and pre-treatment of the bump connector preform
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H01L2224/1111 5 Shaping
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H01L2224/1112 5 Applying permanent coating
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H01L2224/113 4 by local deposition of the material of the bump connector
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H01L2224/1131 5 in liquid form
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H01L2224/11312 6 Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
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H01L2224/11318 6 by dispensing droplets
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H01L2224/1132 6 Screen printing, i.e. using a stencil
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H01L2224/1133 5 in solid form
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H01L2224/11332 6 using a powder
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H01L2224/11334 6 using preformed bumps
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H01L2224/1134 6 Stud bumping, i.e. using a wire-bonding apparatus
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H01L2224/114 4 by blanket deposition of the material of the bump connector
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H01L2224/1141 5 in liquid form
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H01L2224/11416 6 Spin coating
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H01L2224/11418 6 Spray coating
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H01L2224/1142 6 Curtain coating
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H01L2224/11422 6 by dipping, e.g. in a solder bath (hot-dipping C23C2/00)
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H01L2224/11424 6 Immersion coating, e.g. in a solder bath (immersion processes C23C2/00)
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H01L2224/11426 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/11428 6 Wave coating
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H01L2224/1143 5 in solid form
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H01L2224/11436 6 Lamination of a preform, e.g. foil, sheet or layer
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H01L2224/11438 7 the preform being at least partly pre-patterned
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H01L2224/1144 7 by transfer printing
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H01L2224/11442 6 using a powder
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H01L2224/11444 5 in gaseous form
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H01L2224/1145 6 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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H01L2224/11452 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/1146 5 Plating
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H01L2224/11462 6 Electroplating
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H01L2224/11464 6 Electroless plating
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H01L2224/11466 5 Conformal deposition, i.e. blanket deposition of a conformal layer on a patterned surface
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H01L2224/1147 4 using a lift-off mask
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H01L2224/11472 5 Profile of the lift-off mask
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H01L2224/11474 5 Multilayer masks
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H01L2224/1148 5 Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
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H01L2224/115 4 by chemical or physical modification of a pre-existing or pre-deposited material
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H01L2224/11502 5 Pre-existing or pre-deposited material
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H01L2224/11505 5 Sintering
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H01L2224/1151 5 Anodisation
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H01L2224/11515 5 Curing and solidification, e.g. of a photosensitive bump material
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H01L2224/1152 5 Self-assembly, e.g. self-agglomeration of the bump material in a fluid
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H01L2224/11522 6 Auxiliary means therefor, e.g. for self-assembly activation
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H01L2224/11524 6 with special adaptation of the surface or of an auxiliary substrate, e.g. surface shape specially adapted for the self-assembly process
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H01L2224/11526 6 involving the material of the bonding area, e.g. bonding pad or under bump metallisation [UBM]
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H01L2224/1155 5 Selective modification
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H01L2224/11552 6 using a laser or a focussed ion beam [FIB]
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H01L2224/11554 7 Stereolithography, i.e. solidification of a pattern defined by a laser trace in a photosensitive resin
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H01L2224/116 4 by patterning a pre-deposited material (treatment of parts prior to assembly of the devices H01L21/48)
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H01L2224/11602 5 Mechanical treatment, e.g. polishing, grinding
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H01L2224/1161 5 Physical or chemical etching
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H01L2224/11612 6 by physical means only
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H01L2224/11614 6 by chemical means only
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H01L2224/11616 6 Chemical mechanical polishing [CMP]
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H01L2224/11618 5 with selective exposure, development and removal of a photosensitive bump material, e.g. of a photosensitive conductive resin
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H01L2224/1162 5 using masks
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H01L2224/11622 6 Photolithography
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H01L2224/1163 5 using a laser or a focused ion beam [FIB]
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H01L2224/11632 6 Ablation by means of a laser or focused ion beam [FIB]
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H01L2224/117 4 involving monitoring, e.g. feedback loop
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H01L2224/118 4 Post-treatment of the bump connector
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H01L2224/1181 5 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/1182 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/11821 6 Spray coating
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H01L2224/11822 6 by dipping, e.g. in a solder bath
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H01L2224/11823 6 Immersion coating, e.g. in a solder bath
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H01L2224/11824 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/11825 6 Plating, e.g. electroplating, electroless plating
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H01L2224/11826 6 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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H01L2224/11827 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/1183 5 Reworking, e.g. shaping (reflowing H01L2224/11849)
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H01L2224/11831 6 involving a chemical process, e.g. etching the bump connector
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H01L2224/1184 6 involving a mechanical process, e.g. planarising the bump connector
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H01L2224/11845 6 Chemical mechanical polishing [CMP]
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H01L2224/11848 5 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/11849 6 Reflowing
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H01L2224/119 4 Methods of manufacturing bump connectors involving a specific sequence of method steps
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H01L2224/11901 5 with repetition of the same manufacturing step
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H01L2224/11902 6 Multiple masking steps
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H01L2224/11903 7 using different masks
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H01L2224/11906 7 with modification of the same mask
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H01L2224/1191 5 Forming a passivation layer after forming the bump connector
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H01L2224/11912 5 the bump being used as a mask for patterning other parts
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H01L2224/11914 5 the under bump metallisation [UBM] being used as a mask for patterning other parts
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H01L2224/11916 5 a passivation layer being used as a mask for patterning other parts
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H01L2224/12 3 Structure, shape, material or disposition of the bump connectors prior to the connecting process
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H01L2224/12105 4 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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H01L2224/13 4 of an individual bump connector
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H01L2224/13001 5 Core members of the bump connector
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H01L2224/13005 6 Structure
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H01L2224/13006 7 Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
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H01L2224/13007 7 Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
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H01L2224/13008 7 Bump connector integrally formed with a redistribution layer on the semiconductor or solid-state body
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H01L2224/13009 7 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
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H01L2224/1301 6 Shape
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H01L2224/13011 7 comprising apertures or cavities, e.g. hollow bump
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H01L2224/13012 7 in top view
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H01L2224/13013 8 being rectangular or square
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H01L2224/13014 8 being circular or elliptic
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H01L2224/13015 8 comprising protrusions or indentations
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H01L2224/13016 7 in side view
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H01L2224/13017 8 being non uniform along the bump connector
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H01L2224/13018 8 comprising protrusions or indentations
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H01L2224/13019 9 at the bonding interface of the bump connector, i.e. on the surface of the bump connector
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H01L2224/1302 6 Disposition
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H01L2224/13021 7 the bump connector being disposed in a recess of the surface
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H01L2224/13022 7 the bump connector being at least partially embedded in the surface
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H01L2224/13023 7 the whole bump connector protruding from the surface
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H01L2224/13024 7 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
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H01L2224/13025 7 the bump connector being disposed on a via connection of the semiconductor or solid-state body
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H01L2224/13026 7 relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
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H01L2224/13027 8 the bump connector being offset with respect to the bonding area, e.g. bond pad
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H01L2224/13028 8 the bump connector being disposed on at least two separate bonding areas, e.g. bond pads
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H01L2224/13075 6 Plural core members
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H01L2224/13076 7 being mutually engaged together, e.g. through inserts
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H01L2224/13078 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/1308 7 being stacked
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H01L2224/13082 8 Two-layer arrangements
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H01L2224/13083 8 Three-layer arrangements
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H01L2224/13084 8 Four-layer arrangements
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H01L2224/13099 6 Material
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H01L2224/131 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13101 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13105 9 Gallium [Ga] as principal constituent
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H01L2224/13109 9 Indium [In] as principal constituent
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H01L2224/13111 9 Tin [Sn] as principal constituent
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H01L2224/13113 9 Bismuth [Bi] as principal constituent
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H01L2224/13114 9 Thallium [Tl] as principal constituent
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H01L2224/13116 9 Lead [Pb] as principal constituent
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H01L2224/13117 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13118 9 Zinc [Zn] as principal constituent
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H01L2224/1312 9 Antimony [Sb] as principal constituent
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H01L2224/13123 9 Magnesium [Mg] as principal constituent
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H01L2224/13124 9 Aluminium [Al] as principal constituent
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H01L2224/13138 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13139 9 Silver [Ag] as principal constituent
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H01L2224/13144 9 Gold [Au] as principal constituent
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H01L2224/13147 9 Copper [Cu] as principal constituent
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H01L2224/13149 9 Manganese [Mn] as principal constituent
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H01L2224/13155 9 Nickel [Ni] as principal constituent
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H01L2224/13157 9 Cobalt [Co] as principal constituent
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H01L2224/1316 9 Iron [Fe] as principal constituent
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H01L2224/13163 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13164 9 Palladium [Pd] as principal constituent
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H01L2224/13166 9 Titanium [Ti] as principal constituent
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H01L2224/13169 9 Platinum [Pt] as principal constituent
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H01L2224/1317 9 Zirconium [Zr] as principal constituent
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H01L2224/13171 9 Chromium [Cr] as principal constituent
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H01L2224/13172 9 Vanadium [V] as principal constituent
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H01L2224/13173 9 Rhodium [Rh] as principal constituent
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H01L2224/13176 9 Ruthenium [Ru] as principal constituent
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H01L2224/13178 9 Iridium [Ir] as principal constituent
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H01L2224/13179 9 Niobium [Nb] as principal constituent
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H01L2224/1318 9 Molybdenum [Mo] as principal constituent
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H01L2224/13181 9 Tantalum [Ta] as principal constituent
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H01L2224/13183 9 Rhenium [Re] as principal constituent
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H01L2224/13184 9 Tungsten [W] as principal constituent
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H01L2224/13186 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13187 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13188)
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H01L2224/13188 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1319 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13191 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13193 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/131 - H01L2224/13191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13194 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/131 - H01L2224/13191
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H01L2224/13195 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/131 - H01L2224/13191
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H01L2224/13198 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13199 8 Material of the matrix
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H01L2224/132 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13201 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13205 11 Gallium [Ga] as principal constituent
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H01L2224/13209 11 Indium [In] as principal constituent
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H01L2224/13211 11 Tin [Sn] as principal constituent
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H01L2224/13213 11 Bismuth [Bi] as principal constituent
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H01L2224/13214 11 Thallium [Tl] as principal constituent
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H01L2224/13216 11 Lead [Pb] as principal constituent
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H01L2224/13217 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13218 11 Zinc [Zn] as principal constituent
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H01L2224/1322 11 Antimony [Sb] as principal constituent
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H01L2224/13223 11 Magnesium [Mg] as principal constituent
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H01L2224/13224 11 Aluminium [Al] as principal constituent
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H01L2224/13238 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13239 11 Silver [Ag] as principal constituent
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H01L2224/13244 11 Gold [Au] as principal constituent
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H01L2224/13247 11 Copper [Cu] as principal constituent
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H01L2224/13249 11 Manganese [Mn] as principal constituent
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H01L2224/13255 11 Nickel [Ni] as principal constituent
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H01L2224/13257 11 Cobalt [Co] as principal constituent
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H01L2224/1326 11 Iron [Fe] as principal constituent
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H01L2224/13263 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13264 11 Palladium [Pd] as principal constituent
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H01L2224/13266 11 Titanium [Ti] as principal constituent
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H01L2224/13269 11 Platinum [Pt] as principal constituent
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H01L2224/1327 11 Zirconium [Zr] as principal constituent
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H01L2224/13271 11 Chromium [Cr] as principal constituent
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H01L2224/13272 11 Vanadium [V] as principal constituent
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H01L2224/13273 11 Rhodium [Rh] as principal constituent
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H01L2224/13276 11 Ruthenium [Ru] as principal constituent
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H01L2224/13278 11 Iridium [Ir] as principal constituent
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H01L2224/13279 11 Niobium [Nb] as principal constituent
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H01L2224/1328 11 Molybdenum [Mo] as principal constituent
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H01L2224/13281 11 Tantalum [Ta] as principal constituent
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H01L2224/13283 11 Rhenium [Re] as principal constituent
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H01L2224/13284 11 Tungsten [W] as principal constituent
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H01L2224/13286 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13287 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13288)
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H01L2224/13288 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1329 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13291 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13293 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/132 - H01L2224/13291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13294 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
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H01L2224/13295 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/132 - H01L2224/13291
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H01L2224/13298 8 Fillers
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H01L2224/13299 9 Base material
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H01L2224/133 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13301 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13305 12 Gallium [Ga] as principal constituent
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H01L2224/13309 12 Indium [In] as principal constituent
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H01L2224/13311 12 Tin [Sn] as principal constituent
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H01L2224/13313 12 Bismuth [Bi] as principal constituent
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H01L2224/13314 12 Thallium [Tl] as principal constituent
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H01L2224/13316 12 Lead [Pb] as principal constituent
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H01L2224/13317 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13318 12 Zinc [Zn] as principal constituent
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H01L2224/1332 12 Antimony [Sb] as principal constituent
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H01L2224/13323 12 Magnesium [Mg] as principal constituent
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H01L2224/13324 12 Aluminium [Al] as principal constituent
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H01L2224/13338 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13339 12 Silver [Ag] as principal constituent
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H01L2224/13344 12 Gold [Au] as principal constituent
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H01L2224/13347 12 Copper [Cu] as principal constituent
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H01L2224/13349 12 Manganese [Mn] as principal constituent
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H01L2224/13355 12 Nickel [Ni] as principal constituent
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H01L2224/13357 12 Cobalt [Co] as principal constituent
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H01L2224/1336 12 Iron [Fe] as principal constituent
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H01L2224/13363 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13364 12 Palladium [Pd] as principal constituent
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H01L2224/13366 12 Titanium [Ti] as principal constituent
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H01L2224/13369 12 Platinum [Pt] as principal constituent
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H01L2224/1337 12 Zirconium [Zr] as principal constituent
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H01L2224/13371 12 Chromium [Cr] as principal constituent
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H01L2224/13372 12 Vanadium [V] as principal constituent
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H01L2224/13373 12 Rhodium [Rh] as principal constituent
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H01L2224/13376 12 Ruthenium [Ru] as principal constituent
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H01L2224/13378 12 Iridium [Ir] as principal constituent
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H01L2224/13379 12 Niobium [Nb] as principal constituent
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H01L2224/1338 12 Molybdenum [Mo] as principal constituent
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H01L2224/13381 12 Tantalum [Ta] as principal constituent
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H01L2224/13383 12 Rhenium [Re] as principal constituent
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H01L2224/13384 12 Tungsten [W] as principal constituent
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H01L2224/13386 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13387 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13388)
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H01L2224/13388 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1339 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13391 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13393 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/133 - H01L2224/13391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13394 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/133 - H01L2224/13391
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H01L2224/13395 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/133 - H01L2224/13391
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H01L2224/13398 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13399 9 Coating material
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H01L2224/134 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13401 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13405 12 Gallium [Ga] as principal constituent
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H01L2224/13409 12 Indium [In] as principal constituent
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H01L2224/13411 12 Tin [Sn] as principal constituent
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H01L2224/13413 12 Bismuth [Bi] as principal constituent
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H01L2224/13414 12 Thallium [Tl] as principal constituent
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H01L2224/13416 12 Lead [Pb] as principal constituent
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H01L2224/13417 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13418 12 Zinc [Zn] as principal constituent
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H01L2224/1342 12 Antimony [Sb] as principal constituent
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H01L2224/13423 12 Magnesium [Mg] as principal constituent
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H01L2224/13424 12 Aluminium [Al] as principal constituent
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H01L2224/13438 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13439 12 Silver [Ag] as principal constituent
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H01L2224/13444 12 Gold [Au] as principal constituent
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H01L2224/13447 12 Copper [Cu] as principal constituent
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H01L2224/13449 12 Manganese [Mn] as principal constituent
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H01L2224/13455 12 Nickel [Ni] as principal constituent
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H01L2224/13457 12 Cobalt [Co] as principal constituent
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H01L2224/1346 12 Iron [Fe] as principal constituent
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H01L2224/13463 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13464 12 Palladium [Pd] as principal constituent
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H01L2224/13466 12 Titanium [Ti] as principal constituent
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H01L2224/13469 12 Platinum [Pt] as principal constituent
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H01L2224/1347 12 Zirconium [Zr] as principal constituent
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H01L2224/13471 12 Chromium [Cr] as principal constituent
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H01L2224/13472 12 Vanadium [V] as principal constituent
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H01L2224/13473 12 Rhodium [Rh] as principal constituent
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H01L2224/13476 12 Ruthenium [Ru] as principal constituent
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H01L2224/13478 12 Iridium [Ir] as principal constituent
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H01L2224/13479 12 Niobium [Nb] as principal constituent
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H01L2224/1348 12 Molybdenum [Mo] as principal constituent
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H01L2224/13481 12 Tantalum [Ta] as principal constituent
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H01L2224/13483 12 Rhenium [Re] as principal constituent
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H01L2224/13484 12 Tungsten [W] as principal constituent
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H01L2224/13486 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13487 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13488)
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H01L2224/13488 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1349 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13491 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13493 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/134 - H01L2224/13491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13494 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/134 - H01L2224/13491
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H01L2224/13495 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/134 - H01L2224/13491
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H01L2224/13498 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13499 9 Shape or distribution of the fillers
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H01L2224/1354 5 Coating
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H01L2224/13541 6 Structure
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H01L2224/1355 6 Shape
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H01L2224/13551 7 being non uniform
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H01L2224/13552 8 comprising protrusions or indentations
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H01L2224/13553 9 at the bonding interface of the bump connector, i.e. on the surface of the bump connector
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H01L2224/1356 6 Disposition
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H01L2224/13561 7 On the entire surface of the core, i.e. integral coating
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H01L2224/13562 7 On the entire exposed surface of the core
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H01L2224/13563 7 Only on parts of the surface of the core, i.e. partial coating
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H01L2224/13564 8 Only on the bonding interface of the bump connector
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H01L2224/13565 8 Only outside the bonding interface of the bump connector
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H01L2224/13566 8 Both on and outside the bonding interface of the bump connector
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H01L2224/1357 6 Single coating layer
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H01L2224/13575 6 Plural coating layers
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H01L2224/13576 7 being mutually engaged together, e.g. through inserts
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H01L2224/13578 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/1358 7 being stacked
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H01L2224/13582 8 Two-layer coating
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H01L2224/13583 8 Three-layer coating
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H01L2224/13584 8 Four-layer coating
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H01L2224/13599 6 Material
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H01L2224/136 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13601 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13605 9 Gallium [Ga] as principal constituent
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H01L2224/13609 9 Indium [In] as principal constituent
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H01L2224/13611 9 Tin [Sn] as principal constituent
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H01L2224/13613 9 Bismuth [Bi] as principal constituent
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H01L2224/13614 9 Thallium [Tl] as principal constituent
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H01L2224/13616 9 Lead [Pb] as principal constituent
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H01L2224/13617 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13618 9 Zinc [Zn] as principal constituent
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H01L2224/1362 9 Antimony [Sb] as principal constituent
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H01L2224/13623 9 Magnesium [Mg] as principal constituent
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H01L2224/13624 9 Aluminium [Al] as principal constituent
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H01L2224/13638 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13639 9 Silver [Ag] as principal constituent
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H01L2224/13644 9 Gold [Au] as principal constituent
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H01L2224/13647 9 Copper [Cu] as principal constituent
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H01L2224/13649 9 Manganese [Mn] as principal constituent
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H01L2224/13655 9 Nickel [Ni] as principal constituent
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H01L2224/13657 9 Cobalt [Co] as principal constituent
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H01L2224/1366 9 Iron [Fe] as principal constituent
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H01L2224/13663 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13664 9 Palladium [Pd] as principal constituent
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H01L2224/13666 9 Titanium [Ti] as principal constituent
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H01L2224/13669 9 Platinum [Pt] as principal constituent
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H01L2224/1367 9 Zirconium [Zr] as principal constituent
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H01L2224/13671 9 Chromium [Cr] as principal constituent
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H01L2224/13672 9 Vanadium [V] as principal constituent
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H01L2224/13673 9 Rhodium [Rh] as principal constituent
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H01L2224/13676 9 Ruthenium [Ru] as principal constituent
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H01L2224/13678 9 Iridium [Ir] as principal constituent
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H01L2224/13679 9 Niobium [Nb] as principal constituent
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H01L2224/1368 9 Molybdenum [Mo] as principal constituent
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H01L2224/13681 9 Tantalum [Ta] as principal constituent
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H01L2224/13683 9 Rhenium [Re] as principal constituent
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H01L2224/13684 9 Tungsten [W] as principal constituent
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H01L2224/13686 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13687 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13688)
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H01L2224/13688 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1369 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13691 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13693 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/136 - H01L2224/13691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13694 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/136 - H01L2224/13691
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H01L2224/13695 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/136 - H01L2224/13691
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H01L2224/13698 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13699 8 Material of the matrix
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H01L2224/137 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13701 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13705 11 Gallium [Ga] as principal constituent
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H01L2224/13709 11 Indium [In] as principal constituent
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H01L2224/13711 11 Tin [Sn] as principal constituent
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H01L2224/13713 11 Bismuth [Bi] as principal constituent
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H01L2224/13714 11 Thallium [Tl] as principal constituent
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H01L2224/13716 11 Lead [Pb] as principal constituent
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H01L2224/13717 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13718 11 Zinc [Zn] as principal constituent
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H01L2224/1372 11 Antimony [Sb] as principal constituent
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H01L2224/13723 11 Magnesium [Mg] as principal constituent
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H01L2224/13724 11 Aluminium [Al] as principal constituent
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H01L2224/13738 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13739 11 Silver [Ag] as principal constituent
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H01L2224/13744 11 Gold [Au] as principal constituent
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H01L2224/13747 11 Copper [Cu] as principal constituent
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H01L2224/13749 11 Manganese [Mn] as principal constituent
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H01L2224/13755 11 Nickel [Ni] as principal constituent
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H01L2224/13757 11 Cobalt [Co] as principal constituent
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H01L2224/1376 11 Iron [Fe] as principal constituent
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H01L2224/13763 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13764 11 Palladium [Pd] as principal constituent
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H01L2224/13766 11 Titanium [Ti] as principal constituent
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H01L2224/13769 11 Platinum [Pt] as principal constituent
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H01L2224/1377 11 Zirconium [Zr] as principal constituent
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H01L2224/13771 11 Chromium [Cr] as principal constituent
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H01L2224/13772 11 Vanadium [V] as principal constituent
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H01L2224/13773 11 Rhodium [Rh] as principal constituent
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H01L2224/13776 11 Ruthenium [Ru] as principal constituent
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H01L2224/13778 11 Iridium [Ir] as principal constituent
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H01L2224/13779 11 Niobium [Nb] as principal constituent
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H01L2224/1378 11 Molybdenum [Mo] as principal constituent
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H01L2224/13781 11 Tantalum [Ta] as principal constituent
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H01L2224/13783 11 Rhenium [Re] as principal constituent
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H01L2224/13784 11 Tungsten [W] as principal constituent
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H01L2224/13786 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13787 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13788)
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H01L2224/13788 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1379 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13791 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13793 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/137 - H01L2224/13791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13794 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/137 - H01L2224/13791
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H01L2224/13795 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/137 - H01L2224/13791
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H01L2224/13798 8 Fillers
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H01L2224/13799 9 Base material
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H01L2224/138 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13801 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13805 12 Gallium [Ga] as principal constituent
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H01L2224/13809 12 Indium [In] as principal constituent
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H01L2224/13811 12 Tin [Sn] as principal constituent
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H01L2224/13813 12 Bismuth [Bi] as principal constituent
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H01L2224/13814 12 Thallium [Tl] as principal constituent
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H01L2224/13816 12 Lead [Pb] as principal constituent
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H01L2224/13817 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13818 12 Zinc [Zn] as principal constituent
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H01L2224/1382 12 Antimony [Sb] as principal constituent
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H01L2224/13823 12 Magnesium [Mg] as principal constituent
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H01L2224/13824 12 Aluminium [Al] as principal constituent
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H01L2224/13838 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13839 12 Silver [Ag] as principal constituent
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H01L2224/13844 12 Gold [Au] as principal constituent
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H01L2224/13847 12 Copper [Cu] as principal constituent
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H01L2224/13849 12 Manganese [Mn] as principal constituent
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H01L2224/13855 12 Nickel [Ni] as principal constituent
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H01L2224/13857 12 Cobalt [Co] as principal constituent
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H01L2224/1386 12 Iron [Fe] as principal constituent
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H01L2224/13863 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13864 12 Palladium [Pd] as principal constituent
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H01L2224/13866 12 Titanium [Ti] as principal constituent
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H01L2224/13869 12 Platinum [Pt] as principal constituent
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H01L2224/1387 12 Zirconium [Zr] as principal constituent
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H01L2224/13871 12 Chromium [Cr] as principal constituent
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H01L2224/13872 12 Vanadium [V] as principal constituent
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H01L2224/13873 12 Rhodium [Rh] as principal constituent
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H01L2224/13876 12 Ruthenium [Ru] as principal constituent
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H01L2224/13878 12 Iridium [Ir] as principal constituent
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H01L2224/13879 12 Niobium [Nb] as principal constituent
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H01L2224/1388 12 Molybdenum [Mo] as principal constituent
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H01L2224/13881 12 Tantalum [Ta] as principal constituent
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H01L2224/13883 12 Rhenium [Re] as principal constituent
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H01L2224/13884 12 Tungsten [W] as principal constituent
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H01L2224/13886 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13887 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13888)
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H01L2224/13888 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1389 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13891 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13893 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/138 - H01L2224/13891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13894 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/138 - H01L2224/13891
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H01L2224/13895 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/138 - H01L2224/13891
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H01L2224/13898 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13899 9 Coating material
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H01L2224/139 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13901 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/13905 12 Gallium [Ga] as principal constituent
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H01L2224/13909 12 Indium [In] as principal constituent
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H01L2224/13911 12 Tin [Sn] as principal constituent
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H01L2224/13913 12 Bismuth [Bi] as principal constituent
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H01L2224/13914 12 Thallium [Tl] as principal constituent
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H01L2224/13916 12 Lead [Pb] as principal constituent
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H01L2224/13917 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/13918 12 Zinc [Zn] as principal constituent
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H01L2224/1392 12 Antimony [Sb] as principal constituent
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H01L2224/13923 12 Magnesium [Mg] as principal constituent
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H01L2224/13924 12 Aluminium [Al] as principal constituent
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H01L2224/13938 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/13939 12 Silver [Ag] as principal constituent
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H01L2224/13944 12 Gold [Au] as principal constituent
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H01L2224/13947 12 Copper [Cu] as principal constituent
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H01L2224/13949 12 Manganese [Mn] as principal constituent
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H01L2224/13955 12 Nickel [Ni] as principal constituent
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H01L2224/13957 12 Cobalt [Co] as principal constituent
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H01L2224/1396 12 Iron [Fe] as principal constituent
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H01L2224/13963 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13964 12 Palladium [Pd] as principal constituent
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H01L2224/13966 12 Titanium [Ti] as principal constituent
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H01L2224/13969 12 Platinum [Pt] as principal constituent
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H01L2224/1397 12 Zirconium [Zr] as principal constituent
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H01L2224/13971 12 Chromium [Cr] as principal constituent
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H01L2224/13972 12 Vanadium [V] as principal constituent
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H01L2224/13973 12 Rhodium [Rh] as principal constituent
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H01L2224/13976 12 Ruthenium [Ru] as principal constituent
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H01L2224/13978 12 Iridium [Ir] as principal constituent
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H01L2224/13979 12 Niobium [Nb] as principal constituent
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H01L2224/1398 12 Molybdenum [Mo] as principal constituent
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H01L2224/13981 12 Tantalum [Ta] as principal constituent
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H01L2224/13983 12 Rhenium [Re] as principal constituent
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H01L2224/13984 12 Tungsten [W] as principal constituent
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H01L2224/13986 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/13987 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/13988)
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H01L2224/13988 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/1399 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/13991 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/13993 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/139 - H01L2224/13991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/13994 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/139 - H01L2224/13991
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H01L2224/13995 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/139 - H01L2224/13991
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H01L2224/13998 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/13999 9 Shape or distribution of the fillers
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H01L2224/14 4 of a plurality of bump connectors
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H01L2224/1401 5 Structure
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H01L2224/1403 6 Bump connectors having different sizes, e.g. different diameters, heights or widths
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H01L2224/1405 5 Shape
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H01L2224/14051 6 Bump connectors having different shapes
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H01L2224/141 5 Disposition
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H01L2224/14104 6 relative to the bonding areas, e.g. bond pads, of the semiconductor or solid-state body
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H01L2224/1411 7 the bump connectors being bonded to at least one common bonding area
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H01L2224/1412 6 Layout
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H01L2224/1413 7 Square or rectangular array
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H01L2224/14131 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/14132 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/14133 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/14134 8 covering only portions of the surface to be connected
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H01L2224/14135 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/14136 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/1414 7 Circular array, i.e. array with radial symmetry
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H01L2224/14141 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/14142 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/14143 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/14144 9 covering only portions of the surface to be connected
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H01L2224/14145 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/14146 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/1415 7 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
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H01L2224/14151 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/14152 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/14153 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/14154 8 covering only portions of the surface to be connected
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H01L2224/14155 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/14156 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/1416 7 Random layout, i.e. layout with no symmetry
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H01L2224/14163 8 with a staggered arrangement
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H01L2224/14164 8 covering only portions of the surface to be connected
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H01L2224/14165 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/14166 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/14177 7 Combinations of arrays with different layouts
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H01L2224/14179 7 Corner adaptations, i.e. disposition of the bump connectors at the corners of the semiconductor or solid-state body
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H01L2224/1418 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/14181 7 On opposite sides of the body
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H01L2224/14183 7 On contiguous sides of the body
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H01L2224/145 5 Material
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H01L2224/14505 6 Bump connectors having different materials
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H01L2224/1451 5 Function
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H01L2224/14515 6 Bump connectors having different functions
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H01L2224/14517 7 including bump connectors providing primarily mechanical bonding
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H01L2224/14519 7 including bump connectors providing primarily thermal dissipation
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H01L2224/15 3 Structure, shape, material or disposition of the bump connectors after the connecting process
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H01L2224/16 4 of an individual bump connector
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H01L2224/1601 5 Structure
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H01L2224/16012 6 relative to the bonding area, e.g. bond pad
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H01L2224/16013 7 the bump connector being larger than the bonding area, e.g. bond pad
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H01L2224/16014 7 the bump connector being smaller than the bonding area, e.g. bond pad
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H01L2224/1605 5 Shape
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H01L2224/16052 6 in top view
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H01L2224/16054 7 being rectangular or square
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H01L2224/16055 7 being circular or elliptic
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H01L2224/16056 7 comprising protrusions or indentations
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H01L2224/16057 6 in side view
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H01L2224/16058 7 being non uniform along the bump connector
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H01L2224/16059 7 comprising protrusions or indentations
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H01L2224/1607 6 of bonding interfaces, e.g. interlocking features
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H01L2224/161 5 Disposition
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H01L2224/16104 6 relative to the bonding area, e.g. bond pad
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H01L2224/16105 7 the bump connector connecting bonding areas being not aligned with respect to each other
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H01L2224/16106 7 the bump connector connecting one bonding area to at least two respective bonding areas
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H01L2224/16108 6 the bump connector not being orthogonal to the surface
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H01L2224/16111 6 the bump connector being disposed in a recess of the surface
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H01L2224/16112 6 the bump connector being at least partially embedded in the surface
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H01L2224/16113 6 the whole bump connector protruding from the surface
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H01L2224/1613 6 the bump connector connecting within a semiconductor or solid-state body, i.e. connecting two bonding areas on the same semiconductor or solid-state body
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H01L2224/16135 6 the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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H01L2224/16137 7 the bodies being arranged next to each other, e.g. on a common substrate
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H01L2224/16141 7 the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
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H01L2224/16145 7 the bodies being stacked
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H01L2224/16146 8 the bump connector connecting to a via connection in the semiconductor or solid-state body
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H01L2224/16147 8 the bump connector connecting to a bonding area disposed in a recess of the surface
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H01L2224/16148 8 the bump connector connecting to a bonding area protruding from the surface
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H01L2224/16151 6 the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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H01L2224/16153 7 the body and the item being arranged next to each other, e.g. on a common substrate
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H01L2224/16155 8 the item being non-metallic, e.g. being an insulating substrate with or without metallisation
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H01L2224/16157 9 the bump connector connecting to a bond pad of the item
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H01L2224/1616 9 the bump connector connecting to a pin of the item
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H01L2224/16163 9 the bump connector connecting to a potential ring of the item
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H01L2224/16165 9 the bump connector connecting to a via metallisation of the item
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H01L2224/16167 9 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/16168 9 the bump connector connecting to a bonding area protruding from the surface of the item
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H01L2224/16175 8 the item being metallic
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H01L2224/16183 9 the bump connector connecting to a potential ring of the item
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H01L2224/16187 9 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/16188 9 the bump connector connecting to a bonding area protruding from the surface of the item
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H01L2224/16195 8 the item being a discrete passive component
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H01L2224/16197 9 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/16198 9 the bump connector connecting to a bonding area protruding from the surface of the item
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H01L2224/16221 7 the body and the item being stacked
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H01L2224/16225 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/16227 9 the bump connector connecting to a bond pad of the item
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H01L2224/1623 9 the bump connector connecting to a pin of the item
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H01L2224/16233 9 the bump connector connecting to a potential ring of the item
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H01L2224/16235 9 the bump connector connecting to a via metallisation of the item
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H01L2224/16237 9 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/16238 9 the bump connector connecting to a bonding area protruding from the surface of the item
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H01L2224/1624 9 the bump connector connecting between the body and an opposite side of the item with respect to the body
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H01L2224/16245 8 the item being metallic
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H01L2224/16253 9 the bump connector connecting to a potential ring of the item
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H01L2224/16257 9 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/16258 9 the bump connector connecting to a bonding area protruding from the surface of the item
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H01L2224/1626 9 the bump connector connecting between the body and an opposite side of the item with respect to the body
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H01L2224/16265 8 the item being a discrete passive component
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H01L2224/16267 9 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/16268 9 the bump connector connecting to a bonding area protruding from the surface of the item
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H01L2224/165 5 Material
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H01L2224/16501 6 at the bonding interface
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H01L2224/16502 7 comprising an eutectic alloy
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H01L2224/16503 7 comprising an intermetallic compound
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H01L2224/16505 6 outside the bonding interface, e.g. in the bulk of the bump connector
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H01L2224/16506 7 comprising an eutectic alloy
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H01L2224/16507 7 comprising an intermetallic compound
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H01L2224/17 4 of a plurality of bump connectors
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H01L2224/1701 5 Structure
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H01L2224/1703 6 Bump connectors having different sizes, e.g. different diameters, heights or widths
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H01L2224/1705 5 Shape
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H01L2224/17051 6 Bump connectors having different shapes
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H01L2224/17055 7 of their bonding interfaces
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H01L2224/171 5 Disposition
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H01L2224/17104 6 relative to the bonding areas, e.g. bond pads
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H01L2224/17106 7 the bump connectors being bonded to at least one common bonding area
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H01L2224/17107 8 the bump connectors connecting two common bonding areas
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H01L2224/1712 6 Layout (layout of bump connectors prior to the connecting process H01L2224/1412)
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H01L2224/1713 7 Square or rectangular array
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H01L2224/17132 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/17133 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/17134 8 covering only portions of the surface to be connected
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H01L2224/17135 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/17136 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/1714 7 Circular array, i.e. array with radial symmetry
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H01L2224/17142 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/17143 8 with a staggered arrangement
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H01L2224/17144 8 covering only portions of the surface to be connected
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H01L2224/17145 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/17146 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/1715 7 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
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H01L2224/17151 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/17152 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/17153 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/17154 8 covering only portions of the surface to be connected
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H01L2224/17155 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/17156 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/1716 7 Random layout, i.e. layout with no symmetry
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H01L2224/17163 8 with a staggered arrangement
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H01L2224/17164 8 covering only portions of the surface to be connected
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H01L2224/17165 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/17166 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/17177 7 Combinations of arrays with different layouts
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H01L2224/17179 7 Corner adaptations, i.e. disposition of the bump connectors at the corners of the semiconductor or solid-state body
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H01L2224/1718 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/17181 7 On opposite sides of the body
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H01L2224/17183 7 On contiguous sides of the body
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H01L2224/175 5 Material
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H01L2224/17505 6 Bump connectors having different materials
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H01L2224/1751 5 Function
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H01L2224/17515 6 Bump connectors having different functions
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H01L2224/17517 7 including bump connectors providing primarily mechanical support
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H01L2224/17519 7 including bump connectors providing primarily thermal dissipation
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H01L2224/18 2 High density interconnect [HDI] connectors; Manufacturing methods related thereto
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H01L2224/19 3 Manufacturing methods of high density interconnect preforms
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H01L2224/20 3 Structure, shape, material or disposition of high density interconnect preforms
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H01L2224/21 4 of an individual HDI interconnect
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H01L2224/2101 5 Structure
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H01L2224/2105 5 Shape
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H01L2224/211 5 Disposition
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H01L2224/214 5 Connecting portions
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H01L2224/215 5 Material
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H01L2224/22 4 of a plurality of HDI interconnects
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H01L2224/2201 5 Structure
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H01L2224/2205 5 Shape
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H01L2224/221 5 Disposition
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H01L2224/224 5 Connecting portions
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H01L2224/225 5 Material
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H01L2224/22505 6 HDI interconnects having different materials
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H01L2224/23 3 Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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H01L2224/24 4 of an individual high density interconnect connector
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H01L2224/2401 5 Structure
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H01L2224/24011 6 Deposited, e.g. MCM-D type
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H01L2224/2402 6 Laminated, e.g. MCM-L type
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H01L2224/2405 5 Shape
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H01L2224/24051 6 Conformal with the semiconductor or solid-state device
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H01L2224/241 5 Disposition
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H01L2224/24101 6 Connecting bonding areas at the same height
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H01L2224/24105 6 Connecting bonding areas at different heights
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H01L2224/2413 6 Connecting within a semiconductor or solid-state body
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H01L2224/24135 6 Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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H01L2224/24137 7 the bodies being arranged next to each other, e.g. on a common substrate
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H01L2224/24141 7 the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
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H01L2224/24145 7 the bodies being stacked
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H01L2224/24146 8 the HDI interconnect connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted
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H01L2224/24147 8 the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body
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H01L2224/24151 6 Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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H01L2224/24153 7 the body and the item being arranged next to each other, e.g. on a common substrate
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H01L2224/24155 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/24175 8 the item being metallic
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H01L2224/24195 8 the item being a discrete passive component
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H01L2224/24221 7 the body and the item being stacked
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H01L2224/24225 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/24226 9 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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H01L2224/24227 9 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
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H01L2224/24245 8 the item being metallic
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H01L2224/24246 9 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
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H01L2224/24247 9 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
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H01L2224/24265 8 the item being a discrete passive component
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H01L2224/244 5 Connecting portions
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H01L2224/245 5 Material
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H01L2224/2499 5 Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
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H01L2224/24991 6 being formed on the semiconductor or solid-state body to be connected
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H01L2224/24992 7 Flow barrier
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H01L2224/24996 6 being formed on an item to be connected not being a semiconductor or solid-state body
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H01L2224/24997 7 Flow barrier
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H01L2224/24998 7 Reinforcing structures, e.g. ramp-like support
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H01L2224/25 4 of a plurality of high density interconnect connectors
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H01L2224/2501 5 Structure
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H01L2224/2505 5 Shape
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H01L2224/251 5 Disposition
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H01L2224/25105 6 Connecting at different heights
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H01L2224/2511 6 the connectors being bonded to at least one common bonding area
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H01L2224/25111 7 the connectors connecting two common bonding areas
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H01L2224/25112 7 the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body
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H01L2224/25113 7 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body
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H01L2224/2512 6 Layout
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H01L2224/25171 7 Fan-out arrangements
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H01L2224/25174 7 Stacked arrangements
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H01L2224/25175 7 Parallel arrangements
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H01L2224/25177 7 Combinations of a plurality of arrangements
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H01L2224/2518 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/254 5 Connecting portions
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H01L2224/2541 6 the connecting portions being stacked
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H01L2224/2543 6 the connecting portions being staggered
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H01L2224/255 5 Material
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H01L2224/26 2 Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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H01L2224/2612 3 Auxiliary members for layer connectors, e.g. spacers
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H01L2224/26122 4 being formed on the semiconductor or solid-state body to be connected
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H01L2224/26125 5 Reinforcing structures
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H01L2224/26135 5 Alignment aids
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H01L2224/26145 5 Flow barriers
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H01L2224/26152 4 being formed on an item to be connected not being a semiconductor or solid-state body
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H01L2224/26155 5 Reinforcing structures
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H01L2224/26165 5 Alignment aids
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H01L2224/26175 5 Flow barriers
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H01L2224/27 3 Manufacturing methods
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H01L2224/27001 4 Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/27002 5 for supporting the semiconductor or solid-state body
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H01L2224/27003 5 for holding or transferring the layer preform
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H01L2224/27005 5 for aligning the layer connector, e.g. marks, spacers
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H01L2224/27009 5 for protecting parts during manufacture
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H01L2224/27011 4 Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
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H01L2224/27013 5 for holding or confining the layer connector, e.g. solder flow barrier
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H01L2224/27015 5 for aligning the layer connector, e.g. marks, spacers
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H01L2224/27019 5 for protecting parts during the process
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H01L2224/271 4 Manufacture and pre-treatment of the layer connector preform
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H01L2224/2711 5 Shaping
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H01L2224/2712 5 Applying permanent coating
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H01L2224/273 4 by local deposition of the material of the layer connector
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H01L2224/2731 5 in liquid form
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H01L2224/27312 6 Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
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H01L2224/27318 6 by dispensing droplets
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H01L2224/2732 6 Screen printing, i.e. using a stencil
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H01L2224/2733 5 in solid form
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H01L2224/27332 6 using a powder
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H01L2224/27334 6 using preformed layer
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H01L2224/274 4 by blanket deposition of the material of the layer connector
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H01L2224/2741 5 in liquid form
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H01L2224/27416 6 Spin coating
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H01L2224/27418 6 Spray coating
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H01L2224/2742 6 Curtain coating
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H01L2224/27422 6 by dipping, e.g. in a solder bath (hot-dipping C23C2/00)
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H01L2224/27424 6 Immersion coating, e.g. in a solder bath (immersion processes C23C2/00)
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H01L2224/27426 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/27428 6 Wave coating
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H01L2224/2743 5 in solid form
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H01L2224/27436 6 Lamination of a preform, e.g. foil, sheet or layer
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H01L2224/27438 7 the preform being at least partly pre-patterned
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H01L2224/2744 7 by transfer printing
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H01L2224/27442 6 using a powder
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H01L2224/27444 5 in gaseous form
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H01L2224/2745 6 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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H01L2224/27452 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/2746 5 Plating
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H01L2224/27462 6 Electroplating
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H01L2224/27464 6 Electroless plating
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H01L2224/27466 5 Conformal deposition, i.e. blanket deposition of a conformal layer on a patterned surface
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H01L2224/2747 4 using a lift-off mask
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H01L2224/27472 5 Profile of the lift-off mask
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H01L2224/27474 5 Multilayer masks
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H01L2224/2748 5 Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
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H01L2224/275 4 by chemical or physical modification of a pre-existing or pre-deposited material
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H01L2224/27502 5 Pre-existing or pre-deposited material
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H01L2224/27505 5 Sintering
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H01L2224/2751 5 Anodisation
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H01L2224/27515 5 Curing and solidification, e.g. of a photosensitive layer material
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H01L2224/2752 5 Self-assembly, e.g. self-agglomeration of the layer material in a fluid
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H01L2224/27522 6 Auxiliary means therefor, e.g. for self-assembly activation
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H01L2224/27524 6 with special adaptation of the surface or of an auxiliary substrate, e.g. surface shape specially adapted for the self-assembly process
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H01L2224/27526 6 involving the material of the bonding area, e.g. bonding pad
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H01L2224/2755 5 Selective modification
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H01L2224/27552 6 using a laser or a focussed ion beam [FIB]
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H01L2224/27554 7 Stereolithography, i.e. solidification of a pattern defined by a laser trace in a photosensitive resin
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H01L2224/276 4 by patterning a pre-deposited material (treatment of parts prior to assembly of the devices H01L21/48)
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H01L2224/27602 5 Mechanical treatment, e.g. polishing, grinding
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H01L2224/2761 5 Physical or chemical etching
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H01L2224/27612 6 by physical means only
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H01L2224/27614 6 by chemical means only
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H01L2224/27616 6 Chemical mechanical polishing [CMP]
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H01L2224/27618 5 with selective exposure, development and removal of a photosensitive layer material, e.g. of a photosensitive conductive resin
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H01L2224/2762 5 using masks
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H01L2224/27622 6 Photolithography
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H01L2224/2763 5 using a laser or a focused ion beam [FIB]
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H01L2224/27632 6 Ablation by means of a laser or focused ion beam [FIB]
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H01L2224/277 4 involving monitoring, e.g. feedback loop
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H01L2224/278 4 Post-treatment of the layer connector
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H01L2224/2781 5 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/2782 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/27821 6 Spray coating
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H01L2224/27822 6 by dipping, e.g. in a solder bath
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H01L2224/27823 6 Immersion coating, e.g. in a solder bath
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H01L2224/27824 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/27825 6 Plating, e.g. electroplating, electroless plating
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H01L2224/27826 6 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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H01L2224/27827 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/2783 5 Reworking, e.g. shaping (reflowing H01L2224/27849)
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H01L2224/27831 6 involving a chemical process, e.g. etching the layer connector
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H01L2224/2784 6 involving a mechanical process, e.g. planarising the layer connector
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H01L2224/27845 6 Chemical mechanical polishing [CMP]
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H01L2224/27848 5 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/27849 6 Reflowing
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H01L2224/279 4 Methods of manufacturing layer connectors involving a specific sequence of method steps
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H01L2224/27901 5 with repetition of the same manufacturing step
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H01L2224/27902 6 Multiple masking steps
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H01L2224/27903 7 using different masks
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H01L2224/27906 7 with modification of the same mask
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H01L2224/2791 5 Forming a passivation layer after forming the layer connector
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H01L2224/27912 5 the layer being used as a mask for patterning other parts
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H01L2224/27916 5 a passivation layer being used as a mask for patterning other parts
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H01L2224/28 3 Structure, shape, material or disposition of the layer connectors prior to the connecting process
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H01L2224/28105 4 Layer connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. layer connectors on chip-scale packages
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H01L2224/29 4 of an individual layer connector
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H01L2224/29001 5 Core members of the layer connector
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H01L2224/29005 6 Structure
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H01L2224/29006 7 Layer connector larger than the underlying bonding area
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H01L2224/29007 7 Layer connector smaller than the underlying bonding area
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H01L2224/29008 7 Layer connector integrally formed with a redistribution layer on the semiconductor or solid-state body
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H01L2224/29009 7 Layer connector integrally formed with a via connection of the semiconductor or solid-state body
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H01L2224/2901 6 Shape
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H01L2224/29011 7 comprising apertures or cavities
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H01L2224/29012 7 in top view
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H01L2224/29013 8 being rectangular or square
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H01L2224/29014 8 being circular or elliptic
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H01L2224/29015 8 comprising protrusions or indentations
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H01L2224/29016 7 in side view
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H01L2224/29017 8 being non uniform along the layer connector
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H01L2224/29018 8 comprising protrusions or indentations
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H01L2224/29019 9 at the bonding interface of the layer connector, i.e. on the surface of the layer connector
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H01L2224/2902 6 Disposition
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H01L2224/29021 7 the layer connector being disposed in a recess of the surface (embedded layer connector H01L2224/29022)
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H01L2224/29022 7 the layer connector being at least partially embedded in the surface
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H01L2224/29023 7 the whole layer connector protruding from the surface
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H01L2224/29024 7 the layer connector being disposed on a redistribution layer on the semiconductor or solid-state body
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H01L2224/29025 7 the layer connector being disposed on a via connection of the semiconductor or solid-state body
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H01L2224/29026 7 relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
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H01L2224/29027 8 the layer connector being offset with respect to the bonding area, e.g. bond pad
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H01L2224/29028 8 the layer connector being disposed on at least two separate bonding areas, e.g. bond pads
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H01L2224/29034 7 the layer connector covering only portions of the surface to be connected
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H01L2224/29035 8 covering only the peripheral area of the surface to be connected
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H01L2224/29036 8 covering only the central area of the surface to be connected
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H01L2224/29075 6 Plural core members
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H01L2224/29076 7 being mutually engaged together, e.g. through inserts
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H01L2224/29078 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/2908 7 being stacked
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H01L2224/29082 8 Two-layer arrangements
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H01L2224/29083 8 Three-layer arrangements
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H01L2224/29084 8 Four-layer arrangements
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H01L2224/29099 6 Material
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H01L2224/291 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29101 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29105 9 Gallium [Ga] as principal constituent
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H01L2224/29109 9 Indium [In] as principal constituent
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H01L2224/29111 9 Tin [Sn] as principal constituent
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H01L2224/29113 9 Bismuth [Bi] as principal constituent
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H01L2224/29114 9 Thallium [Tl] as principal constituent
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H01L2224/29116 9 Lead [Pb] as principal constituent
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H01L2224/29117 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29118 9 Zinc [Zn] as principal constituent
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H01L2224/2912 9 Antimony [Sb] as principal constituent
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H01L2224/29123 9 Magnesium [Mg] as principal constituent
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H01L2224/29124 9 Aluminium [Al] as principal constituent
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H01L2224/29138 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29139 9 Silver [Ag] as principal constituent
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H01L2224/29144 9 Gold [Au] as principal constituent
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H01L2224/29147 9 Copper [Cu] as principal constituent
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H01L2224/29149 9 Manganese [Mn] as principal constituent
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H01L2224/29155 9 Nickel [Ni] as principal constituent
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H01L2224/29157 9 Cobalt [Co] as principal constituent
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H01L2224/2916 9 Iron [Fe] as principal constituent
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H01L2224/29163 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29164 9 Palladium [Pd] as principal constituent
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H01L2224/29166 9 Titanium [Ti] as principal constituent
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H01L2224/29169 9 Platinum [Pt] as principal constituent
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H01L2224/2917 9 Zirconium [Zr] as principal constituent
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H01L2224/29171 9 Chromium [Cr] as principal constituent
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H01L2224/29172 9 Vanadium [V] as principal constituent
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H01L2224/29173 9 Rhodium [Rh] as principal constituent
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H01L2224/29176 9 Ruthenium [Ru] as principal constituent
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H01L2224/29178 9 Iridium [Ir] as principal constituent
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H01L2224/29179 9 Niobium [Nb] as principal constituent
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H01L2224/2918 9 Molybdenum [Mo] as principal constituent
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H01L2224/29181 9 Tantalum [Ta] as principal constituent
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H01L2224/29183 9 Rhenium [Re] as principal constituent
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H01L2224/29184 9 Tungsten [W] as principal constituent
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H01L2224/29186 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29187 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29188)
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H01L2224/29188 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2919 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29191 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29193 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/291 - H01L2224/29191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29194 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/291 - H01L2224/29191
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H01L2224/29195 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/291 - H01L2224/29191
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H01L2224/29198 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/29199 8 Material of the matrix
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H01L2224/292 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29201 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29205 11 Gallium [Ga] as principal constituent
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H01L2224/29209 11 Indium [In] as principal constituent
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H01L2224/29211 11 Tin [Sn] as principal constituent
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H01L2224/29213 11 Bismuth [Bi] as principal constituent
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H01L2224/29214 11 Thallium [Tl] as principal constituent
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H01L2224/29216 11 Lead [Pb] as principal constituent
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H01L2224/29217 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29218 11 Zinc [Zn] as principal constituent
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H01L2224/2922 11 Antimony [Sb] as principal constituent
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H01L2224/29223 11 Magnesium [Mg] as principal constituent
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H01L2224/29224 11 Aluminium [Al] as principal constituent
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H01L2224/29238 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29239 11 Silver [Ag] as principal constituent
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H01L2224/29244 11 Gold [Au] as principal constituent
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H01L2224/29247 11 Copper [Cu] as principal constituent
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H01L2224/29249 11 Manganese [Mn] as principal constituent
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H01L2224/29255 11 Nickel [Ni] as principal constituent
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H01L2224/29257 11 Cobalt [Co] as principal constituent
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H01L2224/2926 11 Iron [Fe] as principal constituent
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H01L2224/29263 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29264 11 Palladium [Pd] as principal constituent
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H01L2224/29266 11 Titanium [Ti] as principal constituent
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H01L2224/29269 11 Platinum [Pt] as principal constituent
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H01L2224/2927 11 Zirconium [Zr] as principal constituent
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H01L2224/29271 11 Chromium [Cr] as principal constituent
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H01L2224/29272 11 Vanadium [V] as principal constituent
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H01L2224/29273 11 Rhodium [Rh] as principal constituent
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H01L2224/29276 11 Ruthenium [Ru] as principal constituent
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H01L2224/29278 11 Iridium [Ir] as principal constituent
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H01L2224/29279 11 Niobium [Nb] as principal constituent
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H01L2224/2928 11 Molybdenum [Mo] as principal constituent
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H01L2224/29281 11 Tantalum [Ta] as principal constituent
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H01L2224/29283 11 Rhenium [Re] as principal constituent
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H01L2224/29284 11 Tungsten [W] as principal constituent
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H01L2224/29286 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29287 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29288)
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H01L2224/29288 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2929 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29291 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29293 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/292 - H01L2224/29291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29294 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
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H01L2224/29295 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/292 - H01L2224/29291
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H01L2224/29298 8 Fillers
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H01L2224/29299 9 Base material
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H01L2224/293 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29301 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29305 12 Gallium [Ga] as principal constituent
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H01L2224/29309 12 Indium [In] as principal constituent
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H01L2224/29311 12 Tin [Sn] as principal constituent
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H01L2224/29313 12 Bismuth [Bi] as principal constituent
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H01L2224/29314 12 Thallium [Tl] as principal constituent
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H01L2224/29316 12 Lead [Pb] as principal constituent
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H01L2224/29317 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29318 12 Zinc [Zn] as principal constituent
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H01L2224/2932 12 Antimony [Sb] as principal constituent
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H01L2224/29323 12 Magnesium [Mg] as principal constituent
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H01L2224/29324 12 Aluminium [Al] as principal constituent
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H01L2224/29338 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29339 12 Silver [Ag] as principal constituent
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H01L2224/29344 12 Gold [Au] as principal constituent
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H01L2224/29347 12 Copper [Cu] as principal constituent
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H01L2224/29349 12 Manganese [Mn] as principal constituent
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H01L2224/29355 12 Nickel [Ni] as principal constituent
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H01L2224/29357 12 Cobalt [Co] as principal constituent
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H01L2224/2936 12 Iron [Fe] as principal constituent
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H01L2224/29363 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29364 12 Palladium [Pd] as principal constituent
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H01L2224/29366 12 Titanium [Ti] as principal constituent
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H01L2224/29369 12 Platinum [Pt] as principal constituent
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H01L2224/2937 12 Zirconium [Zr] as principal constituent
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H01L2224/29371 12 Chromium [Cr] as principal constituent
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H01L2224/29372 12 Vanadium [V] as principal constituent
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H01L2224/29373 12 Rhodium [Rh] as principal constituent
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H01L2224/29376 12 Ruthenium [Ru] as principal constituent
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H01L2224/29378 12 Iridium [Ir] as principal constituent
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H01L2224/29379 12 Niobium [Nb] as principal constituent
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H01L2224/2938 12 Molybdenum [Mo] as principal constituent
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H01L2224/29381 12 Tantalum [Ta] as principal constituent
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H01L2224/29383 12 Rhenium [Re] as principal constituent
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H01L2224/29384 12 Tungsten [W] as principal constituent
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H01L2224/29386 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29387 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29388)
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H01L2224/29388 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2939 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29391 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29393 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29394 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/293 - H01L2224/29391
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H01L2224/29395 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/293 - H01L2224/29391
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H01L2224/29398 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/29399 9 Coating material
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H01L2224/294 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29401 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29405 12 Gallium [Ga] as principal constituent
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H01L2224/29409 12 Indium [In] as principal constituent
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H01L2224/29411 12 Tin [Sn] as principal constituent
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H01L2224/29413 12 Bismuth [Bi] as principal constituent
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H01L2224/29414 12 Thallium [Tl] as principal constituent
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H01L2224/29416 12 Lead [Pb] as principal constituent
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H01L2224/29417 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29418 12 Zinc [Zn] as principal constituent
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H01L2224/2942 12 Antimony [Sb] as principal constituent
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H01L2224/29423 12 Magnesium [Mg] as principal constituent
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H01L2224/29424 12 Aluminium [Al] as principal constituent
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H01L2224/29438 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29439 12 Silver [Ag] as principal constituent
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H01L2224/29444 12 Gold [Au] as principal constituent
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H01L2224/29447 12 Copper [Cu] as principal constituent
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H01L2224/29449 12 Manganese [Mn] as principal constituent
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H01L2224/29455 12 Nickel [Ni] as principal constituent
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H01L2224/29457 12 Cobalt [Co] as principal constituent
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H01L2224/2946 12 Iron [Fe] as principal constituent
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H01L2224/29463 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29464 12 Palladium [Pd] as principal constituent
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H01L2224/29466 12 Titanium [Ti] as principal constituent
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H01L2224/29469 12 Platinum [Pt] as principal constituent
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H01L2224/2947 12 Zirconium [Zr] as principal constituent
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H01L2224/29471 12 Chromium [Cr] as principal constituent
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H01L2224/29472 12 Vanadium [V] as principal constituent
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H01L2224/29473 12 Rhodium [Rh] as principal constituent
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H01L2224/29476 12 Ruthenium [Ru] as principal constituent
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H01L2224/29478 12 Iridium [Ir] as principal constituent
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H01L2224/29479 12 Niobium [Nb] as principal constituent
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H01L2224/2948 12 Molybdenum [Mo] as principal constituent
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H01L2224/29481 12 Tantalum [Ta] as principal constituent
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H01L2224/29483 12 Rhenium [Re] as principal constituent
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H01L2224/29484 12 Tungsten [W] as principal constituent
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H01L2224/29486 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29487 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29488)
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H01L2224/29488 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2949 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29491 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29493 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/294 - H01L2224/29491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29494 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/294 - H01L2224/29491
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H01L2224/29495 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/294 - H01L2224/29491
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H01L2224/29498 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/29499 9 Shape or distribution of the fillers
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H01L2224/2954 5 Coating
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H01L2224/29541 6 Structure
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H01L2224/2955 6 Shape
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H01L2224/29551 7 being non uniform
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H01L2224/29552 8 comprising protrusions or indentations
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H01L2224/29553 9 at the bonding interface of the layer connector, i.e. on the surface of the layer connector
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H01L2224/2956 6 Disposition
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H01L2224/29561 7 On the entire surface of the core, i.e. integral coating
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H01L2224/29562 7 On the entire exposed surface of the core
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H01L2224/29563 7 Only on parts of the surface of the core, i.e. partial coating
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H01L2224/29564 8 Only on the bonding interface of the layer connector
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H01L2224/29565 8 Only outside the bonding interface of the layer connector
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H01L2224/29566 8 Both on and outside the bonding interface of the layer connector
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H01L2224/2957 6 Single coating layer
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H01L2224/29575 6 Plural coating layers
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H01L2224/29576 7 being mutually engaged together, e.g. through inserts
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H01L2224/29578 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/2958 7 being stacked
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H01L2224/29582 8 Two-layer coating
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H01L2224/29583 8 Three-layer coating
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H01L2224/29584 8 Four-layer coating
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H01L2224/29599 6 Material
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H01L2224/296 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29601 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29605 9 Gallium [Ga] as principal constituent
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H01L2224/29609 9 Indium [In] as principal constituent
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H01L2224/29611 9 Tin [Sn] as principal constituent
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H01L2224/29613 9 Bismuth [Bi] as principal constituent
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H01L2224/29614 9 Thallium [Tl] as principal constituent
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H01L2224/29616 9 Lead [Pb] as principal constituent
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H01L2224/29617 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29618 9 Zinc [Zn] as principal constituent
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H01L2224/2962 9 Antimony [Sb] as principal constituent
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H01L2224/29623 9 Magnesium [Mg] as principal constituent
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H01L2224/29624 9 Aluminium [Al] as principal constituent
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H01L2224/29638 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29639 9 Silver [Ag] as principal constituent
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H01L2224/29644 9 Gold [Au] as principal constituent
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H01L2224/29647 9 Copper [Cu] as principal constituent
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H01L2224/29649 9 Manganese [Mn] as principal constituent
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H01L2224/29655 9 Nickel [Ni] as principal constituent
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H01L2224/29657 9 Cobalt [Co] as principal constituent
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H01L2224/2966 9 Iron [Fe] as principal constituent
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H01L2224/29663 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29664 9 Palladium [Pd] as principal constituent
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H01L2224/29666 9 Titanium [Ti] as principal constituent
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H01L2224/29669 9 Platinum [Pt] as principal constituent
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H01L2224/2967 9 Zirconium [Zr] as principal constituent
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H01L2224/29671 9 Chromium [Cr] as principal constituent
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H01L2224/29672 9 Vanadium [V] as principal constituent
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H01L2224/29673 9 Rhodium [Rh] as principal constituent
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H01L2224/29676 9 Ruthenium [Ru] as principal constituent
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H01L2224/29678 9 Iridium [Ir] as principal constituent
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H01L2224/29679 9 Niobium [Nb] as principal constituent
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H01L2224/2968 9 Molybdenum [Mo] as principal constituent
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H01L2224/29681 9 Tantalum [Ta] as principal constituent
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H01L2224/29683 9 Rhenium [Re] as principal constituent
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H01L2224/29684 9 Tungsten [W] as principal constituent
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H01L2224/29686 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29687 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29688)
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H01L2224/29688 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2969 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29691 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29693 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/296 - H01L2224/29691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29694 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/296 - H01L2224/29691
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H01L2224/29695 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/296 - H01L2224/29691
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H01L2224/29698 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/29699 8 Material of the matrix
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H01L2224/297 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29701 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29705 11 Gallium [Ga] as principal constituent
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H01L2224/29709 11 Indium [In] as principal constituent
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H01L2224/29711 11 Tin [Sn] as principal constituent
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H01L2224/29713 11 Bismuth [Bi] as principal constituent
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H01L2224/29714 11 Thallium [Tl] as principal constituent
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H01L2224/29716 11 Lead [Pb] as principal constituent
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H01L2224/29717 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29718 11 Zinc [Zn] as principal constituent
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H01L2224/2972 11 Antimony [Sb] as principal constituent
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H01L2224/29723 11 Magnesium [Mg] as principal constituent
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H01L2224/29724 11 Aluminium [Al] as principal constituent
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H01L2224/29738 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29739 11 Silver [Ag] as principal constituent
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H01L2224/29744 11 Gold [Au] as principal constituent
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H01L2224/29747 11 Copper [Cu] as principal constituent
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H01L2224/29749 11 Manganese [Mn] as principal constituent
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H01L2224/29755 11 Nickel [Ni] as principal constituent
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H01L2224/29757 11 Cobalt [Co] as principal constituent
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H01L2224/2976 11 Iron [Fe] as principal constituent
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H01L2224/29763 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29764 11 Palladium [Pd] as principal constituent
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H01L2224/29766 11 Titanium [Ti] as principal constituent
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H01L2224/29769 11 Platinum [Pt] as principal constituent
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H01L2224/2977 11 Zirconium [Zr] as principal constituent
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H01L2224/29771 11 Chromium [Cr] as principal constituent
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H01L2224/29772 11 Vanadium [V] as principal constituent
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H01L2224/29773 11 Rhodium [Rh] as principal constituent
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H01L2224/29776 11 Ruthenium [Ru] as principal constituent
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H01L2224/29778 11 Iridium [Ir] as principal constituent
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H01L2224/29779 11 Niobium [Nb] as principal constituent
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H01L2224/2978 11 Molybdenum [Mo] as principal constituent
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H01L2224/29781 11 Tantalum [Ta] as principal constituent
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H01L2224/29783 11 Rhenium [Re] as principal constituent
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H01L2224/29784 11 Tungsten [W] as principal constituent
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H01L2224/29786 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29787 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29788)
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H01L2224/29788 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2979 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29791 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29793 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/297 - H01L2224/29791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29794 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/297 - H01L2224/29791
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H01L2224/29795 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/297 - H01L2224/29791
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H01L2224/29798 8 Fillers
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H01L2224/29799 9 Base material
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H01L2224/298 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29801 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29805 12 Gallium [Ga] as principal constituent
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H01L2224/29809 12 Indium [In] as principal constituent
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H01L2224/29811 12 Tin [Sn] as principal constituent
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H01L2224/29813 12 Bismuth [Bi] as principal constituent
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H01L2224/29814 12 Thallium [Tl] as principal constituent
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H01L2224/29816 12 Lead [Pb] as principal constituent
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H01L2224/29817 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29818 12 Zinc [Zn] as principal constituent
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H01L2224/2982 12 Antimony [Sb] as principal constituent
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H01L2224/29823 12 Magnesium [Mg] as principal constituent
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H01L2224/29824 12 Aluminium [Al] as principal constituent
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H01L2224/29838 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29839 12 Silver [Ag] as principal constituent
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H01L2224/29844 12 Gold [Au] as principal constituent
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H01L2224/29847 12 Copper [Cu] as principal constituent
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H01L2224/29849 12 Manganese [Mn] as principal constituent
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H01L2224/29855 12 Nickel [Ni] as principal constituent
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H01L2224/29857 12 Cobalt [Co] as principal constituent
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H01L2224/2986 12 Iron [Fe] as principal constituent
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H01L2224/29863 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29864 12 Palladium [Pd] as principal constituent
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H01L2224/29866 12 Titanium [Ti] as principal constituent
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H01L2224/29869 12 Platinum [Pt] as principal constituent
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H01L2224/2987 12 Zirconium [Zr] as principal constituent
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H01L2224/29871 12 Chromium [Cr] as principal constituent
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H01L2224/29872 12 Vanadium [V] as principal constituent
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H01L2224/29873 12 Rhodium [Rh] as principal constituent
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H01L2224/29876 12 Ruthenium [Ru] as principal constituent
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H01L2224/29878 12 Iridium [Ir] as principal constituent
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H01L2224/29879 12 Niobium [Nb] as principal constituent
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H01L2224/2988 12 Molybdenum [Mo] as principal constituent
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H01L2224/29881 12 Tantalum [Ta] as principal constituent
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H01L2224/29883 12 Rhenium [Re] as principal constituent
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H01L2224/29884 12 Tungsten [W] as principal constituent
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H01L2224/29886 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29887 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29888)
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H01L2224/29888 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2989 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29891 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29893 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/298 - H01L2224/29891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29894 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/298 - H01L2224/29891
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H01L2224/29895 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/298 - H01L2224/29891
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H01L2224/29898 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/29899 9 Coating material
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H01L2224/299 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29901 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/29905 12 Gallium [Ga] as principal constituent
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H01L2224/29909 12 Indium [In] as principal constituent
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H01L2224/29911 12 Tin [Sn] as principal constituent
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H01L2224/29913 12 Bismuth [Bi] as principal constituent
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H01L2224/29914 12 Thallium [Tl] as principal constituent
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H01L2224/29916 12 Lead [Pb] as principal constituent
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H01L2224/29917 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/29918 12 Zinc [Zn] as principal constituent
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H01L2224/2992 12 Antimony [Sb] as principal constituent
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H01L2224/29923 12 Magnesium [Mg] as principal constituent
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H01L2224/29924 12 Aluminium [Al] as principal constituent
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H01L2224/29938 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/29939 12 Silver [Ag] as principal constituent
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H01L2224/29944 12 Gold [Au] as principal constituent
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H01L2224/29947 12 Copper [Cu] as principal constituent
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H01L2224/29949 12 Manganese [Mn] as principal constituent
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H01L2224/29955 12 Nickel [Ni] as principal constituent
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H01L2224/29957 12 Cobalt [Co] as principal constituent
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H01L2224/2996 12 Iron [Fe] as principal constituent
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H01L2224/29963 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29964 12 Palladium [Pd] as principal constituent
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H01L2224/29966 12 Titanium [Ti] as principal constituent
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H01L2224/29969 12 Platinum [Pt] as principal constituent
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H01L2224/2997 12 Zirconium [Zr] as principal constituent
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H01L2224/29971 12 Chromium [Cr] as principal constituent
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H01L2224/29972 12 Vanadium [V] as principal constituent
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H01L2224/29973 12 Rhodium [Rh] as principal constituent
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H01L2224/29976 12 Ruthenium [Ru] as principal constituent
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H01L2224/29978 12 Iridium [Ir] as principal constituent
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H01L2224/29979 12 Niobium [Nb] as principal constituent
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H01L2224/2998 12 Molybdenum [Mo] as principal constituent
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H01L2224/29981 12 Tantalum [Ta] as principal constituent
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H01L2224/29983 12 Rhenium [Re] as principal constituent
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H01L2224/29984 12 Tungsten [W] as principal constituent
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H01L2224/29986 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29987 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/29988)
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H01L2224/29988 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/2999 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/29991 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/29993 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/299 - H01L2224/29991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/29994 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/299 - H01L2224/29991
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H01L2224/29995 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/299 - H01L2224/29991
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H01L2224/29998 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/29999 9 Shape or distribution of the fillers
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H01L2224/30 4 of a plurality of layer connectors
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H01L2224/3001 5 Structure
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H01L2224/3003 6 Layer connectors having different sizes, e.g. different heights or widths
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H01L2224/3005 5 Shape
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H01L2224/30051 6 Layer connectors having different shapes
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H01L2224/301 5 Disposition
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H01L2224/30104 6 relative to the bonding areas, e.g. bond pads, of the semiconductor or solid-state body
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H01L2224/3011 7 the layer connectors being bonded to at least one common bonding area
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H01L2224/3012 6 Layout
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H01L2224/3013 7 Square or rectangular array
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H01L2224/30131 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/30132 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/30133 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/30134 8 covering only portions of the surface to be connected
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H01L2224/30135 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/30136 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/3014 7 Circular array, i.e. array with radial symmetry
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H01L2224/30141 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/30142 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/30143 8 covering only portions of the surface to be connected
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H01L2224/30145 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/30146 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/3015 7 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
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H01L2224/30151 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/30152 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/30153 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/30154 8 covering only portions of the surface to be connected
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H01L2224/30155 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/30156 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/3016 7 Random layout, i.e. layout with no symmetry
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H01L2224/30163 8 with a staggered arrangement
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H01L2224/30164 8 covering only portions of the surface to be connected
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H01L2224/30165 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/30166 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/30177 7 Combinations of arrays with different layouts
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H01L2224/30179 7 Corner adaptations, i.e. disposition of the layer connectors at the corners of the semiconductor or solid-state body
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H01L2224/3018 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/30181 7 On opposite sides of the body
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H01L2224/30183 7 On contiguous sides of the body
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H01L2224/305 5 Material
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H01L2224/30505 6 Layer connectors having different materials
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H01L2224/3051 5 Function
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H01L2224/30515 6 Layer connectors having different functions
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H01L2224/30517 7 including layer connectors providing primarily mechanical bonding
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H01L2224/30519 7 including layer connectors providing primarily thermal dissipation
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H01L2224/31 3 Structure, shape, material or disposition of the layer connectors after the connecting process
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H01L2224/32 4 of an individual layer connector
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H01L2224/3201 5 Structure
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H01L2224/32012 6 relative to the bonding area, e.g. bond pad
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H01L2224/32013 7 the layer connector being larger than the bonding area, e.g. bond pad
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H01L2224/32014 7 the layer connector being smaller than the bonding area, e.g. bond pad
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H01L2224/3205 5 Shape
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H01L2224/32052 6 in top view
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H01L2224/32053 7 being non uniform along the layer connector
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H01L2224/32054 7 being rectangular or square
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H01L2224/32055 7 being circular or elliptic
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H01L2224/32056 7 comprising protrusions or indentations
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H01L2224/32057 6 in side view
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H01L2224/32058 7 being non uniform along the layer connector
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H01L2224/32059 7 comprising protrusions or indentations
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H01L2224/3207 6 of bonding interfaces, e.g. interlocking features
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H01L2224/321 5 Disposition
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H01L2224/32104 6 relative to the bonding area, e.g. bond pad
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H01L2224/32105 7 the layer connector connecting bonding areas being not aligned with respect to each other
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H01L2224/32106 7 the layer connector connecting one bonding area to at least two respective bonding areas
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H01L2224/32111 6 the layer connector being disposed in a recess of the surface
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H01L2224/32112 6 the layer connector being at least partially embedded in the surface
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H01L2224/32113 6 the whole layer connector protruding from the surface
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H01L2224/3213 6 the layer connector connecting within a semiconductor or solid-state body, i.e. connecting two bonding areas on the same semiconductor or solid-state body
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H01L2224/32135 6 the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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H01L2224/32137 7 the bodies being arranged next to each other, e.g. on a common substrate
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H01L2224/32141 7 the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
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H01L2224/32145 7 the bodies being stacked
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H01L2224/32146 8 the layer connector connecting to a via connection in the semiconductor or solid-state body
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H01L2224/32147 8 the layer connector connecting to a bonding area disposed in a recess of the surface
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H01L2224/32148 8 the layer connector connecting to a bonding area protruding from the surface
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H01L2224/32151 6 the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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H01L2224/32153 7 the body and the item being arranged next to each other, e.g. on a common substrate
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H01L2224/32155 8 the item being non-metallic, e.g. being an insulating substrate with or without metallisation
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H01L2224/32157 9 the layer connector connecting to a bond pad of the item
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H01L2224/3216 9 the layer connector connecting to a pin of the item
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H01L2224/32163 9 the layer connector connecting to a potential ring of the item
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H01L2224/32165 9 the layer connector connecting to a via metallisation of the item
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H01L2224/32167 9 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/32168 9 the layer connector connecting to a bonding area protruding from the surface of the item
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H01L2224/32175 8 the item being metallic
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H01L2224/32183 9 the layer connector connecting to a potential ring of the item
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H01L2224/32187 9 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/32188 9 the layer connector connecting to a bonding area protruding from the surface of the item
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H01L2224/32195 8 the item being a discrete passive component
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H01L2224/32197 9 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/32198 9 the layer connector connecting to a bonding area protruding from the surface of the item
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H01L2224/32221 7 the body and the item being stacked
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H01L2224/32225 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/32227 9 the layer connector connecting to a bond pad of the item
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H01L2224/3223 9 the layer connector connecting to a pin of the item
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H01L2224/32233 9 the layer connector connecting to a potential ring of the item
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H01L2224/32235 9 the layer connector connecting to a via metallisation of the item
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H01L2224/32237 9 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/32238 9 the layer connector connecting to a bonding area protruding from the surface of the item
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H01L2224/3224 9 the layer connector connecting between the body and an opposite side of the item with respect to the body
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H01L2224/32245 8 the item being metallic
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H01L2224/32253 9 the layer connector connecting to a potential ring of the item
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H01L2224/32257 9 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/32258 9 the layer connector connecting to a bonding area protruding from the surface of the item
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H01L2224/3226 9 the layer connector connecting between the body and an opposite side of the item with respect to the body
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H01L2224/32265 8 the item being a discrete passive component
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H01L2224/32267 9 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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H01L2224/32268 9 the layer connector connecting to a bonding area protruding from the surface of the item
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H01L2224/325 5 Material
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H01L2224/32501 6 at the bonding interface
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H01L2224/32502 7 comprising an eutectic alloy
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H01L2224/32503 7 comprising an intermetallic compound
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H01L2224/32505 6 outside the bonding interface, e.g. in the bulk of the layer connector
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H01L2224/32506 7 comprising an eutectic alloy
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H01L2224/32507 7 comprising an intermetallic compound
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H01L2224/33 4 of a plurality of layer connectors
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H01L2224/3301 5 Structure
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H01L2224/3303 6 Layer connectors having different sizes, e.g. different heights or widths
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H01L2224/3305 5 Shape
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H01L2224/33051 6 Layer connectors having different shapes
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H01L2224/33055 7 of their bonding interfaces
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H01L2224/331 5 Disposition
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H01L2224/33104 6 relative to the bonding areas, e.g. bond pads
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H01L2224/33106 7 the layer connectors being bonded to at least one common bonding area
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H01L2224/33107 8 the layer connectors connecting two common bonding areas
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H01L2224/3312 6 Layout (layout of layer connectors prior to the connecting process H01L2224/3012)
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H01L2224/3313 7 Square or rectangular array
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H01L2224/33132 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/33133 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/33134 8 covering only portions of the surface to be connected
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H01L2224/33135 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/3314 7 Circular array, i.e. array with radial symmetry
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H01L2224/33142 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/33143 8 with a staggered arrangement
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H01L2224/33144 8 covering only portions of the surface to be connected
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H01L2224/33145 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/3315 7 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
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H01L2224/33151 8 being uniform, i.e. having a uniform pitch across the array
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H01L2224/33152 8 being non uniform, i.e. having a non uniform pitch across the array
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H01L2224/33153 8 with a staggered arrangement, e.g. depopulated array
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H01L2224/33154 8 covering only portions of the surface to be connected
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H01L2224/33155 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/33156 9 Covering only the central area of the surface to be connected, i.e. central arrangements
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H01L2224/3316 7 Random layout, i.e. layout with no symmetry
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H01L2224/33163 8 with a staggered arrangement
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H01L2224/33164 8 covering only portions of the surface to be connected
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H01L2224/33165 9 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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H01L2224/33177 7 Combinations of arrays with different layouts
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H01L2224/33179 7 Corner adaptations, i.e. disposition of the layer connectors at the corners of the semiconductor or solid-state body
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H01L2224/3318 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/33181 7 On opposite sides of the body
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H01L2224/33183 7 On contiguous sides of the body
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H01L2224/335 5 Material
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H01L2224/33505 6 Layer connectors having different materials
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H01L2224/3351 5 Function
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H01L2224/33515 6 Layer connectors having different functions
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H01L2224/33517 7 including layer connectors providing primarily mechanical support
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H01L2224/33519 7 including layer connectors providing primarily thermal dissipation
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H01L2224/34 2 Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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H01L2224/35 3 Manufacturing methods
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H01L2224/35001 4 Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/351 4 Pre-treatment of the preform connector
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H01L2224/3512 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/35125 6 Plating, e.g. electroplating, electroless plating
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H01L2224/352 4 Mechanical processes
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H01L2224/3521 5 Pulling
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H01L2224/355 4 Modification of a pre-existing material
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H01L2224/3551 5 Sintering
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H01L2224/3552 5 Anodisation
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H01L2224/357 4 Involving monitoring, e.g. feedback loop
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H01L2224/358 4 Post-treatment of the connector
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H01L2224/3581 5 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/3582 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/35821 6 Spray coating
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H01L2224/35822 6 Dip coating
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H01L2224/35823 6 Immersion coating, e.g. solder bath
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H01L2224/35824 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/35825 6 Plating, e.g. electroplating, electroless plating
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H01L2224/35826 6 Physical vapour deposition [PVD], e.g. evaporation, sputtering
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H01L2224/35827 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/3583 5 Reworking
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H01L2224/35831 6 with a chemical process, e.g. with etching of the connector
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H01L2224/35847 6 with a mechanical process, e.g. with flattening of the connector
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H01L2224/35848 5 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/35985 4 Methods of manufacturing strap connectors involving a specific sequence of method steps
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H01L2224/35986 5 with repetition of the same manufacturing step
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H01L2224/36 3 Structure, shape, material or disposition of the strap connectors prior to the connecting process
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H01L2224/37 4 of an individual strap connector
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H01L2224/37001 5 Core members of the connector
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H01L2224/37005 6 Structure
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H01L2224/3701 6 Shape
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H01L2224/37011 7 comprising apertures or cavities
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H01L2224/37012 7 Cross-sectional shape
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H01L2224/37013 8 being non uniform along the connector
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H01L2224/3702 6 Disposition
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H01L2224/37025 6 Plural core members
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H01L2224/37026 7 being mutually engaged together, e.g. through inserts
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H01L2224/37028 7 Side-to-side arrangements
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H01L2224/3703 7 Stacked arrangements
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H01L2224/37032 8 Two-layer arrangements
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H01L2224/37033 8 Three-layer arrangements
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H01L2224/37034 8 Four-layer arrangements
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H01L2224/37099 6 Material
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H01L2224/371 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37101 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37105 9 Gallium [Ga] as principal constituent
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H01L2224/37109 9 Indium [In] as principal constituent
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H01L2224/37111 9 Tin [Sn] as principal constituent
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H01L2224/37113 9 Bismuth [Bi] as principal constituent
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H01L2224/37114 9 Thallium [Tl] as principal constituent
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H01L2224/37116 9 Lead [Pb] as principal constituent
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H01L2224/37117 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37118 9 Zinc [Zn] as principal constituent
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H01L2224/3712 9 Antimony [Sb] as principal constituent
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H01L2224/37123 9 Magnesium [Mg] as principal constituent
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H01L2224/37124 9 Aluminium [Al] as principal constituent
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H01L2224/37138 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37139 9 Silver [Ag] as principal constituent
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H01L2224/37144 9 Gold [Au] as principal constituent
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H01L2224/37147 9 Copper [Cu] as principal constituent
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H01L2224/37149 9 Manganese [Mn] as principal constituent
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H01L2224/37155 9 Nickel [Ni] as principal constituent
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H01L2224/37157 9 Cobalt [Co] as principal constituent
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H01L2224/3716 9 Iron [Fe] as principal constituent
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H01L2224/37163 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37164 9 Palladium [Pd] as principal constituent
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H01L2224/37166 9 Titanium [Ti] as principal constituent
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H01L2224/37169 9 Platinum [Pt] as principal constituent
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H01L2224/3717 9 Zirconium [Zr] as principal constituent
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H01L2224/37171 9 Chromium [Cr] as principal constituent
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H01L2224/37172 9 Vanadium [V] as principal constituent
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H01L2224/37173 9 Rhodium [Rh] as principal constituent
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H01L2224/37176 9 Ruthenium [Ru] as principal constituent
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H01L2224/37178 9 Iridium [Ir] as principal constituent
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H01L2224/37179 9 Niobium [Nb] as principal constituent
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H01L2224/3718 9 Molybdenum [Mo] as principal constituent
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H01L2224/37181 9 Tantalum [Ta] as principal constituent
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H01L2224/37183 9 Rhenium [Re] as principal constituent
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H01L2224/37184 9 Tungsten [W] as principal constituent
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H01L2224/37186 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37187 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37188)
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H01L2224/37188 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3719 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37191 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37193 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/371 - H01L2224/37191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37194 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/371 - H01L2224/37191
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H01L2224/37195 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/371 - H01L2224/37191
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H01L2224/37198 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/37199 8 Material of the matrix
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H01L2224/372 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37201 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37205 11 Gallium [Ga] as principal constituent
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H01L2224/37209 11 Indium [In] as principal constituent
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H01L2224/37211 11 Tin [Sn] as principal constituent
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H01L2224/37213 11 Bismuth [Bi] as principal constituent
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H01L2224/37214 11 Thallium [Tl] as principal constituent
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H01L2224/37216 11 Lead [Pb] as principal constituent
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H01L2224/37217 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37218 11 Zinc [Zn] as principal constituent
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H01L2224/3722 11 Antimony [Sb] as principal constituent
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H01L2224/37223 11 Magnesium [Mg] as principal constituent
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H01L2224/37224 11 Aluminium [Al] as principal constituent
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H01L2224/37238 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37239 11 Silver [Ag] as principal constituent
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H01L2224/37244 11 Gold [Au] as principal constituent
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H01L2224/37247 11 Copper [Cu] as principal constituent
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H01L2224/37249 11 Manganese [Mn] as principal constituent
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H01L2224/37255 11 Nickel [Ni] as principal constituent
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H01L2224/37257 11 Cobalt [Co] as principal constituent
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H01L2224/3726 11 Iron [Fe] as principal constituent
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H01L2224/37263 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37264 11 Palladium [Pd] as principal constituent
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H01L2224/37266 11 Titanium [Ti] as principal constituent
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H01L2224/37269 11 Platinum [Pt] as principal constituent
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H01L2224/3727 11 Zirconium [Zr] as principal constituent
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H01L2224/37271 11 Chromium [Cr] as principal constituent
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H01L2224/37272 11 Vanadium [V] as principal constituent
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H01L2224/37273 11 Rhodium [Rh] as principal constituent
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H01L2224/37276 11 Ruthenium [Ru] as principal constituent
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H01L2224/37278 11 Iridium [Ir] as principal constituent
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H01L2224/37279 11 Niobium [Nb] as principal constituent
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H01L2224/3728 11 Molybdenum [Mo] as principal constituent
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H01L2224/37281 11 Tantalum [Ta] as principal constituent
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H01L2224/37283 11 Rhenium [Re] as principal constituent
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H01L2224/37284 11 Tungsten [W] as principal constituent
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H01L2224/37286 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37287 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37288)
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H01L2224/37288 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3729 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37291 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37293 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/372 - H01L2224/37291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37294 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/372 - H01L2224/37291
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H01L2224/37295 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/372 - H01L2224/37291
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H01L2224/37298 8 Fillers
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H01L2224/37299 9 Base material
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H01L2224/373 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37301 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37305 12 Gallium [Ga] as principal constituent
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H01L2224/37309 12 Indium [In] as principal constituent
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H01L2224/37311 12 Tin [Sn] as principal constituent
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H01L2224/37313 12 Bismuth [Bi] as principal constituent
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H01L2224/37314 12 Thallium [Tl] as principal constituent
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H01L2224/37316 12 Lead [Pb] as principal constituent
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H01L2224/37317 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37318 12 Zinc [Zn] as principal constituent
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H01L2224/3732 12 Antimony [Sb] as principal constituent
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H01L2224/37323 12 Magnesium [Mg] as principal constituent
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H01L2224/37324 12 Aluminium [Al] as principal constituent
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H01L2224/37338 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37339 12 Silver [Ag] as principal constituent
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H01L2224/37344 12 Gold [Au] as principal constituent
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H01L2224/37347 12 Copper [Cu] as principal constituent
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H01L2224/37349 12 Manganese [Mn] as principal constituent
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H01L2224/37355 12 Nickel [Ni] as principal constituent
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H01L2224/37357 12 Cobalt [Co] as principal constituent
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H01L2224/3736 12 Iron [Fe] as principal constituent
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H01L2224/37363 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37364 12 Palladium [Pd] as principal constituent
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H01L2224/37366 12 Titanium [Ti] as principal constituent
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H01L2224/37369 12 Platinum [Pt] as principal constituent
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H01L2224/3737 12 Zirconium [Zr] as principal constituent
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H01L2224/37371 12 Chromium [Cr] as principal constituent
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H01L2224/37372 12 Vanadium [V] as principal constituent
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H01L2224/37373 12 Rhodium [Rh] as principal constituent
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H01L2224/37376 12 Ruthenium [Ru] as principal constituent
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H01L2224/37378 12 Iridium [Ir] as principal constituent
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H01L2224/37379 12 Niobium [Nb] as principal constituent
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H01L2224/3738 12 Molybdenum [Mo] as principal constituent
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H01L2224/37381 12 Tantalum [Ta] as principal constituent
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H01L2224/37383 12 Rhenium [Re] as principal constituent
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H01L2224/37384 12 Tungsten [W] as principal constituent
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H01L2224/37386 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37387 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37388)
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H01L2224/37388 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3739 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37391 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37393 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/373 - H01L2224/37391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37394 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/373 - H01L2224/37391
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H01L2224/37395 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/373 - H01L2224/37391
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H01L2224/37398 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/37399 9 Coating material
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H01L2224/374 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37401 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37405 12 Gallium [Ga] as principal constituent
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H01L2224/37409 12 Indium [In] as principal constituent
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H01L2224/37411 12 Tin [Sn] as principal constituent
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H01L2224/37413 12 Bismuth [Bi] as principal constituent
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H01L2224/37414 12 Thallium [Tl] as principal constituent
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H01L2224/37416 12 Lead [Pb] as principal constituent
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H01L2224/37417 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37418 12 Zinc [Zn] as principal constituent
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H01L2224/3742 12 Antimony [Sb] as principal constituent
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H01L2224/37423 12 Magnesium [Mg] as principal constituent
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H01L2224/37424 12 Aluminium [Al] as principal constituent
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H01L2224/37438 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37439 12 Silver [Ag] as principal constituent
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H01L2224/37444 12 Gold [Au] as principal constituent
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H01L2224/37447 12 Copper [Cu] as principal constituent
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H01L2224/37449 12 Manganese [Mn] as principal constituent
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H01L2224/37455 12 Nickel [Ni] as principal constituent
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H01L2224/37457 12 Cobalt [Co] as principal constituent
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H01L2224/3746 12 Iron [Fe] as principal constituent
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H01L2224/37463 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37464 12 Palladium [Pd] as principal constituent
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H01L2224/37466 12 Titanium [Ti] as principal constituent
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H01L2224/37469 12 Platinum [Pt] as principal constituent
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H01L2224/3747 12 Zirconium [Zr] as principal constituent
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H01L2224/37471 12 Chromium [Cr] as principal constituent
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H01L2224/37472 12 Vanadium [V] as principal constituent
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H01L2224/37473 12 Rhodium [Rh] as principal constituent
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H01L2224/37476 12 Ruthenium [Ru] as principal constituent
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H01L2224/37478 12 Iridium [Ir] as principal constituent
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H01L2224/37479 12 Niobium [Nb] as principal constituent
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H01L2224/3748 12 Molybdenum [Mo] as principal constituent
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H01L2224/37481 12 Tantalum [Ta] as principal constituent
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H01L2224/37483 12 Rhenium [Re] as principal constituent
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H01L2224/37484 12 Tungsten [W] as principal constituent
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H01L2224/37486 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37487 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37488)
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H01L2224/37488 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3749 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37491 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37493 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/374 - H01L2224/37491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37494 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/374 - H01L2224/37491
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H01L2224/37495 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/374 - H01L2224/37491
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H01L2224/37498 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/37499 9 Shape or distribution of the fillers
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H01L2224/3754 5 Coating
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H01L2224/37541 6 Structure
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H01L2224/3755 6 Shape
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H01L2224/3756 6 Disposition, e.g. coating on a part of the core
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H01L2224/37565 6 Single coating layer
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H01L2224/3757 6 Plural coating layers
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H01L2224/37572 7 Two-layer stack coating
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H01L2224/37573 7 Three-layer stack coating
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H01L2224/37574 7 Four-layer stack coating
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H01L2224/37576 7 being mutually engaged together, e.g. through inserts
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H01L2224/37578 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/37599 6 Material
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H01L2224/376 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37601 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37605 9 Gallium [Ga] as principal constituent
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H01L2224/37609 9 Indium [In] as principal constituent
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H01L2224/37611 9 Tin [Sn] as principal constituent
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H01L2224/37613 9 Bismuth [Bi] as principal constituent
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H01L2224/37614 9 Thallium [Tl] as principal constituent
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H01L2224/37616 9 Lead [Pb] as principal constituent
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H01L2224/37617 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37618 9 Zinc [Zn] as principal constituent
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H01L2224/3762 9 Antimony [Sb] as principal constituent
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H01L2224/37623 9 Magnesium [Mg] as principal constituent
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H01L2224/37624 9 Aluminium [Al] as principal constituent
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H01L2224/37638 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37639 9 Silver [Ag] as principal constituent
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H01L2224/37644 9 Gold [Au] as principal constituent
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H01L2224/37647 9 Copper [Cu] as principal constituent
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H01L2224/37649 9 Manganese [Mn] as principal constituent
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H01L2224/37655 9 Nickel [Ni] as principal constituent
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H01L2224/37657 9 Cobalt [Co] as principal constituent
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H01L2224/3766 9 Iron [Fe] as principal constituent
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H01L2224/37663 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37664 9 Palladium [Pd] as principal constituent
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H01L2224/37666 9 Titanium [Ti] as principal constituent
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H01L2224/37669 9 Platinum [Pt] as principal constituent
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H01L2224/3767 9 Zirconium [Zr] as principal constituent
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H01L2224/37671 9 Chromium [Cr] as principal constituent
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H01L2224/37672 9 Vanadium [V] as principal constituent
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H01L2224/37673 9 Rhodium [Rh] as principal constituent
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H01L2224/37676 9 Ruthenium [Ru] as principal constituent
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H01L2224/37678 9 Iridium [Ir] as principal constituent
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H01L2224/37679 9 Niobium [Nb] as principal constituent
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H01L2224/3768 9 Molybdenum [Mo] as principal constituent
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H01L2224/37681 9 Tantalum [Ta] as principal constituent
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H01L2224/37683 9 Rhenium [Re] as principal constituent
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H01L2224/37684 9 Tungsten [W] as principal constituent
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H01L2224/37686 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37687 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37688)
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H01L2224/37688 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3769 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37691 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37693 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/376 - H01L2224/37691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37694 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/376 - H01L2224/37691
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H01L2224/37695 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/376 - H01L2224/37691
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H01L2224/37698 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/37699 8 Material of the matrix
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H01L2224/377 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37701 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37705 11 Gallium [Ga] as principal constituent
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H01L2224/37709 11 Indium [In] as principal constituent
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H01L2224/37711 11 Tin [Sn] as principal constituent
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H01L2224/37713 11 Bismuth [Bi] as principal constituent
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H01L2224/37714 11 Thallium [Tl] as principal constituent
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H01L2224/37716 11 Lead [Pb] as principal constituent
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H01L2224/37717 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37718 11 Zinc [Zn] as principal constituent
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H01L2224/3772 11 Antimony [Sb] as principal constituent
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H01L2224/37723 11 Magnesium [Mg] as principal constituent
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H01L2224/37724 11 Aluminium [Al] as principal constituent
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H01L2224/37738 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37739 11 Silver [Ag] as principal constituent
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H01L2224/37744 11 Gold [Au] as principal constituent
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H01L2224/37747 11 Copper [Cu] as principal constituent
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H01L2224/37749 11 Manganese [Mn] as principal constituent
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H01L2224/37755 11 Nickel [Ni] as principal constituent
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H01L2224/37757 11 Cobalt [Co] as principal constituent
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H01L2224/3776 11 Iron [Fe] as principal constituent
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H01L2224/37763 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37764 11 Palladium [Pd] as principal constituent
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H01L2224/37766 11 Titanium [Ti] as principal constituent
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H01L2224/37769 11 Platinum [Pt] as principal constituent
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H01L2224/3777 11 Zirconium [Zr] as principal constituent
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H01L2224/37771 11 Chromium [Cr] as principal constituent
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H01L2224/37772 11 Vanadium [V] as principal constituent
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H01L2224/37773 11 Rhodium [Rh] as principal constituent
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H01L2224/37776 11 Ruthenium [Ru] as principal constituent
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H01L2224/37778 11 Iridium [Ir] as principal constituent
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H01L2224/37779 11 Niobium [Nb] as principal constituent
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H01L2224/3778 11 Molybdenum [Mo] as principal constituent
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H01L2224/37781 11 Tantalum [Ta] as principal constituent
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H01L2224/37783 11 Rhenium [Re] as principal constituent
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H01L2224/37784 11 Tungsten [W] as principal constituent
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H01L2224/37786 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37787 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37788)
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H01L2224/37788 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3779 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37791 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37793 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/377 - H01L2224/37791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37794 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/377 - H01L2224/37791
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H01L2224/37795 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/377 - H01L2224/37791
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H01L2224/37798 8 Fillers
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H01L2224/37799 9 Base material
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H01L2224/378 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37801 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37805 12 Gallium [Ga] as principal constituent
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H01L2224/37809 12 Indium [In] as principal constituent
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H01L2224/37811 12 Tin [Sn] as principal constituent
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H01L2224/37813 12 Bismuth [Bi] as principal constituent
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H01L2224/37814 12 Thallium [Tl] as principal constituent
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H01L2224/37816 12 Lead [Pb] as principal constituent
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H01L2224/37817 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37818 12 Zinc [Zn] as principal constituent
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H01L2224/3782 12 Antimony [Sb] as principal constituent
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H01L2224/37823 12 Magnesium [Mg] as principal constituent
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H01L2224/37824 12 Aluminium [Al] as principal constituent
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H01L2224/37838 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37839 12 Silver [Ag] as principal constituent
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H01L2224/37844 12 Gold [Au] as principal constituent
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H01L2224/37847 12 Copper [Cu] as principal constituent
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H01L2224/37849 12 Manganese [Mn] as principal constituent
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H01L2224/37855 12 Nickel [Ni] as principal constituent
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H01L2224/37857 12 Cobalt [Co] as principal constituent
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H01L2224/3786 12 Iron [Fe] as principal constituent
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H01L2224/37863 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37864 12 Palladium [Pd] as principal constituent
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H01L2224/37866 12 Titanium [Ti] as principal constituent
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H01L2224/37869 12 Platinum [Pt] as principal constituent
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H01L2224/3787 12 Zirconium [Zr] as principal constituent
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H01L2224/37871 12 Chromium [Cr] as principal constituent
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H01L2224/37872 12 Vanadium [V] as principal constituent
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H01L2224/37873 12 Rhodium [Rh] as principal constituent
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H01L2224/37876 12 Ruthenium [Ru] as principal constituent
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H01L2224/37878 12 Iridium [Ir] as principal constituent
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H01L2224/37879 12 Niobium [Nb] as principal constituent
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H01L2224/3788 12 Molybdenum [Mo] as principal constituent
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H01L2224/37881 12 Tantalum [Ta] as principal constituent
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H01L2224/37883 12 Rhenium [Re] as principal constituent
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H01L2224/37884 12 Tungsten [W] as principal constituent
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H01L2224/37886 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37887 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37888)
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H01L2224/37888 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3789 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37891 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37893 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/378 - H01L2224/37891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37894 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/378 - H01L2224/37891
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H01L2224/37895 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/378 - H01L2224/37891
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H01L2224/37898 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/37899 9 Coating material
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H01L2224/379 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/37901 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/37905 12 Gallium [Ga] as principal constituent
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H01L2224/37909 12 Indium [In] as principal constituent
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H01L2224/37911 12 Tin [Sn] as principal constituent
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H01L2224/37913 12 Bismuth [Bi] as principal constituent
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H01L2224/37914 12 Thallium [Tl] as principal constituent
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H01L2224/37916 12 Lead [Pb] as principal constituent
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H01L2224/37917 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/37918 12 Zinc [Zn] as principal constituent
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H01L2224/3792 12 Antimony [Sb] as principal constituent
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H01L2224/37923 12 Magnesium [Mg] as principal constituent
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H01L2224/37924 12 Aluminium [Al] as principal constituent
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H01L2224/37938 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/37939 12 Silver [Ag] as principal constituent
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H01L2224/37944 12 Gold [Au] as principal constituent
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H01L2224/37947 12 Copper [Cu] as principal constituent
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H01L2224/37949 12 Manganese [Mn] as principal constituent
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H01L2224/37955 12 Nickel [Ni] as principal constituent
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H01L2224/37957 12 Cobalt [Co] as principal constituent
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H01L2224/3796 12 Iron [Fe] as principal constituent
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H01L2224/37963 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/37964 12 Palladium [Pd] as principal constituent
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H01L2224/37966 12 Titanium [Ti] as principal constituent
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H01L2224/37969 12 Platinum [Pt] as principal constituent
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H01L2224/3797 12 Zirconium [Zr] as principal constituent
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H01L2224/37971 12 Chromium [Cr] as principal constituent
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H01L2224/37972 12 Vanadium [V] as principal constituent
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H01L2224/37973 12 Rhodium [Rh] as principal constituent
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H01L2224/37976 12 Ruthenium [Ru] as principal constituent
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H01L2224/37978 12 Iridium [Ir] as principal constituent
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H01L2224/37979 12 Niobium [Nb] as principal constituent
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H01L2224/3798 12 Molybdenum [Mo] as principal constituent
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H01L2224/37981 12 Tantalum [Ta] as principal constituent
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H01L2224/37983 12 Rhenium [Re] as principal constituent
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H01L2224/37984 12 Tungsten [W] as principal constituent
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H01L2224/37986 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/37987 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/37988)
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H01L2224/37988 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/3799 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/37991 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/37993 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/379 - H01L2224/37991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/37994 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/379 - H01L2224/37991
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H01L2224/37995 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/379 - H01L2224/37991
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H01L2224/37998 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/37999 9 Shape or distribution of the fillers
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H01L2224/38 4 of a plurality of strap connectors
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H01L2224/39 3 Structure, shape, material or disposition of the strap connectors after the connecting process
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H01L2224/40 4 of an individual strap connector
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H01L2224/4001 5 Structure
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H01L2224/4005 5 Shape
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H01L2224/4007 6 of bonding interfaces, e.g. interlocking features
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H01L2224/4009 6 Loop shape
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H01L2224/40091 7 Arched
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H01L2224/40095 7 Kinked
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H01L2224/401 5 Disposition
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H01L2224/40101 6 Connecting bonding areas at the same height, e.g. horizontal bond
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H01L2224/40105 6 Connecting bonding areas at different heights
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H01L2224/40106 7 the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
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H01L2224/40108 7 the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout
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H01L2224/40111 7 the strap connector extending above another semiconductor or solid-state body
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H01L2224/4013 6 Connecting within a semiconductor or solid-state body, i.e. fly strap, bridge strap
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H01L2224/40132 7 with an intermediate bond, e.g. continuous strap daisy chain
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H01L2224/40135 6 Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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H01L2224/40137 7 the bodies being arranged next to each other, e.g. on a common substrate
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H01L2224/40139 8 with an intermediate bond, e.g. continuous strap daisy chain
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H01L2224/40141 7 the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
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H01L2224/40145 7 the bodies being stacked
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H01L2224/40147 8 with an intermediate bond, e.g. continuous strap daisy chain
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H01L2224/40151 6 Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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H01L2224/40153 7 the body and the item being arranged next to each other, e.g. on a common substrate
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H01L2224/40155 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/40157 9 Connecting the strap to a bond pad of the item
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H01L2224/40158 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/40159 10 the bond pad protruding from the surface of the item
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H01L2224/4016 9 Connecting the strap to a pin of the item
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H01L2224/40163 9 Connecting the strap to a potential ring of the item
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H01L2224/40165 9 Connecting the strap to a via metallisation of the item
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H01L2224/40175 8 the item being metallic
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H01L2224/40177 9 Connecting the strap to a bond pad of the item
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H01L2224/40178 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/40179 10 the bond pad protruding from the surface of the item
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H01L2224/40183 9 Connecting the strap to a potential ring of the item
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H01L2224/40195 8 the item being a discrete passive component
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H01L2224/40221 7 the body and the item being stacked
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H01L2224/40225 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/40227 9 Connecting the strap to a bond pad of the item
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H01L2224/40228 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/40229 10 the bond pad protruding from the surface of the item
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H01L2224/4023 9 Connecting the strap to a pin of the item
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H01L2224/40233 9 Connecting the strap to a potential ring of the item
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H01L2224/40235 9 Connecting the strap to a via metallisation of the item
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H01L2224/40237 9 Connecting the strap to a die pad of the item
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H01L2224/4024 9 Connecting between the body and an opposite side of the item with respect to the body
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H01L2224/40245 8 the item being metallic
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H01L2224/40247 9 Connecting the strap to a bond pad of the item
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H01L2224/40248 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/40249 10 the bond pad protruding from the surface of the item
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H01L2224/40253 9 Connecting the strap to a potential ring of the item
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H01L2224/40257 9 Connecting the strap to a die pad of the item
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H01L2224/4026 9 Connecting between the body and an opposite side of the item with respect to the body
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H01L2224/40265 8 the item being a discrete passive component
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H01L2224/404 5 Connecting portions
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H01L2224/4046 6 with multiple bonds on the same bonding area
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H01L2224/40475 6 connected to auxiliary connecting means on the bonding areas
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H01L2224/40477 7 being a pre-ball (i.e. a ball formed by capillary bonding)
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H01L2224/40479 8 on the semiconductor or solid-state body
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H01L2224/4048 8 outside the semiconductor or solid-state body
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H01L2224/40484 8 being a plurality of pre-balls disposed side-to-side
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H01L2224/40486 9 on the semiconductor or solid-state body
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H01L2224/40487 9 outside the semiconductor or solid-state body
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H01L2224/40491 7 being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
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H01L2224/40496 7 not being interposed between the connector and the bonding area
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H01L2224/40499 7 Material of the auxiliary connecting means
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H01L2224/405 5 Material
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H01L2224/40505 6 at the bonding interface
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H01L2224/40506 7 comprising an eutectic alloy
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H01L2224/40507 7 comprising an intermetallic compound
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H01L2224/4051 7 Morphology of the connecting portion, e.g. grain size distribution
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H01L2224/4052 7 Bonding interface between the connecting portion and the bonding area
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H01L2224/4099 5 Auxiliary members for strap connectors, e.g. flow-barriers, spacers
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H01L2224/40991 6 being formed on the semiconductor or solid-state body to be connected
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H01L2224/40992 7 Reinforcing structures
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H01L2224/40993 7 Alignment aids
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H01L2224/40996 6 being formed on an item to be connected not being a semiconductor or solid-state body
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H01L2224/40997 7 Reinforcing structures
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H01L2224/40998 7 Alignment aids
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H01L2224/41 4 of a plurality of strap connectors
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H01L2224/4101 5 Structure
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H01L2224/4103 6 Connectors having different sizes
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H01L2224/4105 5 Shape
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H01L2224/41051 6 Connectors having different shapes
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H01L2224/41052 7 Different loop heights
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H01L2224/411 5 Disposition
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H01L2224/41105 6 Connecting at different heights
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H01L2224/41107 7 on the semiconductor or solid-state body being
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H01L2224/41109 7 outside the semiconductor or solid-state body
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H01L2224/4111 6 the connectors being bonded to at least one common bonding area, e.g. daisy chain
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H01L2224/41111 7 the connectors connecting two common bonding areas
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H01L2224/41112 7 the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging straps
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H01L2224/41113 7 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging straps
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H01L2224/4112 6 Layout
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H01L2224/4117 7 Crossed straps
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H01L2224/41171 7 Fan-out arrangements
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H01L2224/41173 8 Radial fan-out arrangements
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H01L2224/41174 7 Stacked arrangements
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H01L2224/41175 7 Parallel arrangements
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H01L2224/41176 8 Strap connectors having the same loop shape and height
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H01L2224/41177 7 Combinations of different arrangements
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H01L2224/41179 7 Corner adaptations, i.e. disposition of the strap connectors at the corners of the semiconductor or solid-state body
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H01L2224/4118 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/414 5 Connecting portions
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H01L2224/4141 6 the connecting portions being stacked
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H01L2224/41421 7 on the semiconductor or solid-state body
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H01L2224/41422 7 outside the semiconductor or solid-state body
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H01L2224/4143 6 the connecting portions being staggered
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H01L2224/415 5 Material
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H01L2224/41505 6 Connectors having different materials
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H01L2224/42 2 Wire connectors; Manufacturing methods related thereto
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H01L2224/43 3 Manufacturing methods
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H01L2224/43001 4 Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/431 4 Pre-treatment of the preform connector
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H01L2224/4312 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/43125 6 Plating, e.g. electroplating, electroless plating
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H01L2224/432 4 Mechanical processes
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H01L2224/4321 5 Pulling
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H01L2224/435 4 Modification of a pre-existing material
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H01L2224/4351 5 Sintering
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H01L2224/4352 5 Anodisation
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H01L2224/437 4 Involving monitoring, e.g. feedback loop
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H01L2224/438 4 Post-treatment of the connector
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H01L2224/4381 5 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/4382 5 Applying permanent coating, e.g. in-situ coating
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H01L2224/43821 6 Spray coating
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H01L2224/43822 6 Dip coating
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H01L2224/43823 6 Immersion coating, e.g. solder bath
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H01L2224/43824 6 Chemical solution deposition [CSD], i.e. using a liquid precursor
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H01L2224/43825 6 Plating, e.g. electroplating, electroless plating
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H01L2224/43826 6 Physical vapour deposition [PVD], e.g. evaporation, sputtering
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H01L2224/43827 6 Chemical vapour deposition [CVD], e.g. laser CVD
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H01L2224/4383 5 Reworking
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H01L2224/43831 6 with a chemical process, e.g. with etching of the connector
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H01L2224/43847 6 with a mechanical process, e.g. with flattening of the connector
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H01L2224/43848 5 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/43985 4 Methods of manufacturing wire connectors involving a specific sequence of method steps
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H01L2224/43986 5 with repetition of the same manufacturing step
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H01L2224/44 3 Structure, shape, material or disposition of the wire connectors prior to the connecting process
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H01L2224/45 4 of an individual wire connector
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H01L2224/45001 5 Core members of the connector
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H01L2224/45005 6 Structure
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H01L2224/4501 6 Shape
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H01L2224/45012 7 Cross-sectional shape
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H01L2224/45013 8 being non uniform along the connector
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H01L2224/45014 8 Ribbon connectors, e.g. rectangular cross-section
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H01L2224/45015 8 being circular
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H01L2224/45016 8 being elliptic
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H01L2224/4502 6 Disposition
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H01L2224/45025 6 Plural core members
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H01L2224/45026 7 being mutually engaged together, e.g. through inserts
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H01L2224/45028 7 Side-to-side arrangements
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H01L2224/4503 7 Stacked arrangements
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H01L2224/45032 8 Two-layer arrangements
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H01L2224/45033 8 Three-layer arrangements
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H01L2224/45034 8 Four-layer arrangements
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H01L2224/45099 6 Material
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H01L2224/451 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45101 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45105 9 Gallium (Ga) as principal constituent
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H01L2224/45109 9 Indium (In) as principal constituent
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H01L2224/45111 9 Tin (Sn) as principal constituent
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H01L2224/45113 9 Bismuth (Bi) as principal constituent
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H01L2224/45114 9 Thallium (Tl) as principal constituent
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H01L2224/45116 9 Lead (Pb) as principal constituent
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H01L2224/45117 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45118 9 Zinc (Zn) as principal constituent
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H01L2224/4512 9 Antimony (Sb) as principal constituent
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H01L2224/45123 9 Magnesium (Mg) as principal constituent
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H01L2224/45124 9 Aluminium (Al) as principal constituent
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H01L2224/45138 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45139 9 Silver (Ag) as principal constituent
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H01L2224/45144 9 Gold (Au) as principal constituent
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H01L2224/45147 9 Copper (Cu) as principal constituent
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H01L2224/45149 9 Manganese (Mn) as principal constituent
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H01L2224/45155 9 Nickel (Ni) as principal constituent
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H01L2224/45157 9 Cobalt (Co) as principal constituent
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H01L2224/4516 9 Iron (Fe) as principal constituent
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H01L2224/45163 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45164 9 Palladium (Pd) as principal constituent
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H01L2224/45166 9 Titanium (Ti) as principal constituent
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H01L2224/45169 9 Platinum (Pt) as principal constituent
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H01L2224/4517 9 Zirconium (Zr) as principal constituent
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H01L2224/45171 9 Chromium (Cr) as principal constituent
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H01L2224/45172 9 Vanadium (V) as principal constituent
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H01L2224/45173 9 Rhodium (Rh) as principal constituent
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H01L2224/45176 9 Ruthenium (Ru) as principal constituent
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H01L2224/45178 9 Iridium (Ir) as principal constituent
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H01L2224/45179 9 Niobium (Nb) as principal constituent
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H01L2224/4518 9 Molybdenum (Mo) as principal constituent
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H01L2224/45181 9 Tantalum (Ta) as principal constituent
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H01L2224/45183 9 Rhenium (Re) as principal constituent
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H01L2224/45184 9 Tungsten (W) as principal constituent
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H01L2224/45186 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45187 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45188)
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H01L2224/45188 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4519 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45191 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45193 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/451 - H01L2224/45191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45194 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/451 - H01L2224/45191
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H01L2224/45195 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/451 - H01L2224/45191
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H01L2224/45198 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/45199 8 Material of the matrix
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H01L2224/452 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45201 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45205 11 Gallium (Ga) as principal constituent
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H01L2224/45209 11 Indium (In) as principal constituent
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H01L2224/45211 11 Tin (Sn) as principal constituent
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H01L2224/45213 11 Bismuth (Bi) as principal constituent
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H01L2224/45214 11 Thallium (Tl) as principal constituent
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H01L2224/45216 11 Lead (Pb) as principal constituent
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H01L2224/45217 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45218 11 Zinc (Zn) as principal constituent
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H01L2224/4522 11 Antimony (Sb) as principal constituent
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H01L2224/45223 11 Magnesium (Mg) as principal constituent
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H01L2224/45224 11 Aluminium (Al) as principal constituent
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H01L2224/45238 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45239 11 Silver (Ag) as principal constituent
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H01L2224/45244 11 Gold (Au) as principal constituent
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H01L2224/45247 11 Copper (Cu) as principal constituent
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H01L2224/45249 11 Manganese (Mn) as principal constituent
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H01L2224/45255 11 Nickel (Ni) as principal constituent
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H01L2224/45257 11 Cobalt (Co) as principal constituent
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H01L2224/4526 11 Iron (Fe) as principal constituent
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H01L2224/45263 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45264 11 Palladium (Pd) as principal constituent
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H01L2224/45266 11 Titanium (Ti) as principal constituent
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H01L2224/45269 11 Platinum (Pt) as principal constituent
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H01L2224/4527 11 Zirconium (Zr) as principal constituent
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H01L2224/45271 11 Chromium (Cr) as principal constituent
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H01L2224/45272 11 Vanadium (V) as principal constituent
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H01L2224/45273 11 Rhodium (Rh) as principal constituent
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H01L2224/45276 11 Ruthenium (Ru) as principal constituent
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H01L2224/45278 11 Iridium (Ir) as principal constituent
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H01L2224/45279 11 Niobium (Nb) as principal constituent
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H01L2224/4528 11 Molybdenum (Mo) as principal constituent
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H01L2224/45281 11 Tantalum (Ta) as principal constituent
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H01L2224/45283 11 Rhenium (Re) as principal constituent
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H01L2224/45284 11 Tungsten (W) as principal constituent
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H01L2224/45286 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45287 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45288)
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H01L2224/45288 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4529 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45291 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45293 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/452 - H01L2224/45291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45294 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/452 - H01L2224/45291
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H01L2224/45295 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/452 - H01L2224/45291
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H01L2224/45298 8 Fillers
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H01L2224/45299 9 Base material
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H01L2224/453 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45301 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45305 12 Gallium (Ga) as principal constituent
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H01L2224/45309 12 Indium (In) as principal constituent
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H01L2224/45311 12 Tin (Sn) as principal constituent
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H01L2224/45313 12 Bismuth (Bi) as principal constituent
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H01L2224/45314 12 Thallium (Tl) as principal constituent
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H01L2224/45316 12 Lead (Pb) as principal constituent
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H01L2224/45317 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45318 12 Zinc (Zn) as principal constituent
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H01L2224/4532 12 Antimony (Sb) as principal constituent
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H01L2224/45323 12 Magnesium (Mg) as principal constituent
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H01L2224/45324 12 Aluminium (Al) as principal constituent
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H01L2224/45338 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45339 12 Silver (Ag) as principal constituent
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H01L2224/45344 12 Gold (Au) as principal constituent
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H01L2224/45347 12 Copper (Cu) as principal constituent
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H01L2224/45349 12 Manganese (Mn) as principal constituent
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H01L2224/45355 12 Nickel (Ni) as principal constituent
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H01L2224/45357 12 Cobalt (Co) as principal constituent
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H01L2224/4536 12 Iron (Fe) as principal constituent
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H01L2224/45363 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45364 12 Palladium (Pd) as principal constituent
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H01L2224/45366 12 Titanium (Ti) as principal constituent
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H01L2224/45369 12 Platinum (Pt) as principal constituent
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H01L2224/4537 12 Zirconium (Zr) as principal constituent
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H01L2224/45371 12 Chromium (Cr) as principal constituent
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H01L2224/45372 12 Vanadium (V) as principal constituent
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H01L2224/45373 12 Rhodium (Rh) as principal constituent
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H01L2224/45376 12 Ruthenium (Ru) as principal constituent
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H01L2224/45378 12 Iridium (Ir) as principal constituent
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H01L2224/45379 12 Niobium (Nb) as principal constituent
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H01L2224/4538 12 Molybdenum (Mo) as principal constituent
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H01L2224/45381 12 Tantalum (Ta) as principal constituent
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H01L2224/45383 12 Rhenium (Re) as principal constituent
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H01L2224/45384 12 Tungsten (W) as principal constituent
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H01L2224/45386 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45387 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45388)
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H01L2224/45388 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4539 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45391 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45393 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/453 - H01L2224/45391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45394 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/453 - H01L2224/45391
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H01L2224/45395 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/453 - H01L2224/45391
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H01L2224/45398 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/45399 9 Coating material
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H01L2224/454 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45401 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45405 12 Gallium (Ga) as principal constituent
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H01L2224/45409 12 Indium (In) as principal constituent
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H01L2224/45411 12 Tin (Sn) as principal constituent
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H01L2224/45413 12 Bismuth (Bi) as principal constituent
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H01L2224/45414 12 Thallium (Tl) as principal constituent
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H01L2224/45416 12 Lead (Pb) as principal constituent
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H01L2224/45417 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45418 12 Zinc (Zn) as principal constituent
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H01L2224/4542 12 Antimony (Sb) as principal constituent
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H01L2224/45423 12 Magnesium (Mg) as principal constituent
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H01L2224/45424 12 Aluminium (Al) as principal constituent
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H01L2224/45438 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45439 12 Silver (Ag) as principal constituent
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H01L2224/45444 12 Gold (Au) as principal constituent
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H01L2224/45447 12 Copper (Cu) as principal constituent
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H01L2224/45449 12 Manganese (Mn) as principal constituent
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H01L2224/45455 12 Nickel (Ni) as principal constituent
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H01L2224/45457 12 Cobalt (Co) as principal constituent
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H01L2224/4546 12 Iron (Fe) as principal constituent
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H01L2224/45463 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45464 12 Palladium (Pd) as principal constituent
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H01L2224/45466 12 Titanium (Ti) as principal constituent
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H01L2224/45469 12 Platinum (Pt) as principal constituent
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H01L2224/4547 12 Zirconium (Zr) as principal constituent
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H01L2224/45471 12 Chromium (Cr) as principal constituent
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H01L2224/45472 12 Vanadium (V) as principal constituent
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H01L2224/45473 12 Rhodium (Rh) as principal constituent
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H01L2224/45476 12 Ruthenium (Ru) as principal constituent
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H01L2224/45478 12 Iridium (Ir) as principal constituent
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H01L2224/45479 12 Niobium (Nb) as principal constituent
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H01L2224/4548 12 Molybdenum (Mo) as principal constituent
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H01L2224/45481 12 Tantalum (Ta) as principal constituent
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H01L2224/45483 12 Rhenium (Re) as principal constituent
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H01L2224/45484 12 Tungsten (W) as principal constituent
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H01L2224/45486 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45487 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45488)
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H01L2224/45488 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4549 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45491 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45493 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/454 - H01L2224/45491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45494 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/454 - H01L2224/45491
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H01L2224/45495 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/454 - H01L2224/45491
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H01L2224/45498 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/45499 8 Shape or distribution of the fillers
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H01L2224/4554 5 Coating
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H01L2224/45541 6 Structure
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H01L2224/4555 6 Shape
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H01L2224/4556 6 Disposition, e.g. coating on a part of the core
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H01L2224/45565 6 Single coating layer
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H01L2224/4557 6 Plural coating layers
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H01L2224/45572 7 Two-layer stack coating
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H01L2224/45573 7 Three-layer stack coating
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H01L2224/45574 7 Four-layer stack coating
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H01L2224/45576 7 being mutually engaged together, e.g. through inserts
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H01L2224/45578 7 being disposed next to each other, e.g. side-to-side arrangements
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H01L2224/45599 6 Material
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H01L2224/456 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45601 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45605 9 Gallium (Ga) as principal constituent
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H01L2224/45609 9 Indium (In) as principal constituent
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H01L2224/45611 9 Tin (Sn) as principal constituent
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H01L2224/45613 9 Bismuth (Bi) as principal constituent
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H01L2224/45614 9 Thallium (Tl) as principal constituent
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H01L2224/45616 9 Lead (Pb) as principal constituent
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H01L2224/45617 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45618 9 Zinc (Zn) as principal constituent
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H01L2224/4562 9 Antimony (Sb) as principal constituent
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H01L2224/45623 9 Magnesium (Mg) as principal constituent
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H01L2224/45624 9 Aluminium (Al) as principal constituent
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H01L2224/45638 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45639 9 Silver (Ag) as principal constituent
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H01L2224/45644 9 Gold (Au) as principal constituent
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H01L2224/45647 9 Copper (Cu) as principal constituent
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H01L2224/45649 9 Manganese (Mn) as principal constituent
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H01L2224/45655 9 Nickel (Ni) as principal constituent
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H01L2224/45657 9 Cobalt (Co) as principal constituent
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H01L2224/4566 9 Iron (Fe) as principal constituent
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H01L2224/45663 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45664 9 Palladium (Pd) as principal constituent
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H01L2224/45666 9 Titanium (Ti) as principal constituent
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H01L2224/45669 9 Platinum (Pt) as principal constituent
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H01L2224/4567 9 Zirconium (Zr) as principal constituent
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H01L2224/45671 9 Chromium (Cr) as principal constituent
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H01L2224/45672 9 Vanadium (V) as principal constituent
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H01L2224/45673 9 Rhodium (Rh) as principal constituent
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H01L2224/45676 9 Ruthenium (Ru) as principal constituent
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H01L2224/45678 9 Iridium (Ir) as principal constituent
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H01L2224/45679 9 Niobium (Nb) as principal constituent
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H01L2224/4568 9 Molybdenum (Mo) as principal constituent
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H01L2224/45681 9 Tantalum (Ta) as principal constituent
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H01L2224/45683 9 Rhenium (Re) as principal constituent
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H01L2224/45684 9 Tungsten (W) as principal constituent
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H01L2224/45686 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45687 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45688)
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H01L2224/45688 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4569 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45691 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45693 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/456 - H01L2224/45691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45694 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/456 - H01L2224/45691
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H01L2224/45695 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/456 - H01L2224/45691
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H01L2224/45698 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/45699 8 Material of the matrix
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H01L2224/457 9 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45701 10 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45705 11 Gallium (Ga) as principal constituent
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H01L2224/45709 11 Indium (In) as principal constituent
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H01L2224/45711 11 Tin (Sn) as principal constituent
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H01L2224/45713 11 Bismuth (Bi) as principal constituent
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H01L2224/45714 11 Thallium (Tl) as principal constituent
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H01L2224/45716 11 Lead (Pb) as principal constituent
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H01L2224/45717 10 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45718 11 Zinc (Zn) as principal constituent
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H01L2224/4572 11 Antimony (Sb) as principal constituent
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H01L2224/45723 11 Magnesium (Mg) as principal constituent
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H01L2224/45724 11 Aluminium (Al) as principal constituent
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H01L2224/45738 10 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45739 11 Silver (Ag) as principal constituent
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H01L2224/45744 11 Gold (Au) as principal constituent
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H01L2224/45747 11 Copper (Cu) as principal constituent
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H01L2224/45749 11 Manganese (Mn) as principal constituent
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H01L2224/45755 11 Nickel (Ni) as principal constituent
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H01L2224/45757 11 Cobalt (Co) as principal constituent
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H01L2224/4576 11 Iron (Fe) as principal constituent
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H01L2224/45763 10 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45764 11 Palladium (Pd) as principal constituent
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H01L2224/45766 11 Titanium (Ti) as principal constituent
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H01L2224/45769 11 Platinum (Pt) as principal constituent
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H01L2224/4577 11 Zirconium (Zr) as principal constituent
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H01L2224/45771 11 Chromium (Cr) as principal constituent
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H01L2224/45772 11 Vanadium (V) as principal constituent
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H01L2224/45773 11 Rhodium (Rh) as principal constituent
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H01L2224/45776 11 Ruthenium (Ru) as principal constituent
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H01L2224/45778 11 Iridium (Ir) as principal constituent
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H01L2224/45779 11 Niobium (Nb) as principal constituent
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H01L2224/4578 11 Molybdenum (Mo) as principal constituent
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H01L2224/45781 11 Tantalum (Ta) as principal constituent
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H01L2224/45783 11 Rhenium (Re) as principal constituent
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H01L2224/45784 11 Tungsten (W) as principal constituent
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H01L2224/45786 9 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45787 10 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45788)
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H01L2224/45788 10 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4579 9 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45791 10 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45793 9 with a principal constituent of the material being a solid not provided for in groups H01L2224/457 - H01L2224/45791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45794 9 with a principal constituent of the material being a liquid not provided for in groups H01L2224/457 - H01L2224/45791
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H01L2224/45795 9 with a principal constituent of the material being a gas not provided for in groups H01L2224/457 - H01L2224/45791
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H01L2224/45798 8 Fillers
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H01L2224/45799 9 Base material
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H01L2224/458 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45801 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45805 12 Gallium (Ga) as principal constituent
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H01L2224/45809 12 Indium (In) as principal constituent
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H01L2224/45811 12 Tin (Sn) as principal constituent
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H01L2224/45813 12 Bismuth (Bi) as principal constituent
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H01L2224/45814 12 Thallium (Tl) as principal constituent
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H01L2224/45816 12 Lead (Pb) as principal constituent
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H01L2224/45817 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45818 12 Zinc (Zn) as principal constituent
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H01L2224/4582 12 Antimony (Sb) as principal constituent
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H01L2224/45823 12 Magnesium (Mg) as principal constituent
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H01L2224/45824 12 Aluminium (Al) as principal constituent
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H01L2224/45838 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45839 12 Silver (Ag) as principal constituent
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H01L2224/45844 12 Gold (Au) as principal constituent
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H01L2224/45847 12 Copper (Cu) as principal constituent
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H01L2224/45849 12 Manganese (Mn) as principal constituent
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H01L2224/45855 12 Nickel (Ni) as principal constituent
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H01L2224/45857 12 Cobalt (Co) as principal constituent
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H01L2224/4586 12 Iron (Fe) as principal constituent
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H01L2224/45863 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45864 12 Palladium (Pd) as principal constituent
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H01L2224/45866 12 Titanium (Ti) as principal constituent
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H01L2224/45869 12 Platinum (Pt) as principal constituent
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H01L2224/4587 12 Zirconium (Zr) as principal constituent
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H01L2224/45871 12 Chromium (Cr) as principal constituent
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H01L2224/45872 12 Vanadium (V) as principal constituent
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H01L2224/45873 12 Rhodium (Rh) as principal constituent
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H01L2224/45876 12 Ruthenium (Ru) as principal constituent
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H01L2224/45878 12 Iridium (Ir) as principal constituent
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H01L2224/45879 12 Niobium (Nb) as principal constituent
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H01L2224/4588 12 Molybdenum (Mo) as principal constituent
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H01L2224/45881 12 Tantalum (Ta) as principal constituent
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H01L2224/45883 12 Rhenium (Re) as principal constituent
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H01L2224/45884 12 Tungsten (W) as principal constituent
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H01L2224/45886 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45887 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45888)
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H01L2224/45888 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4589 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45891 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45893 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/458 - H01L2224/45891, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45894 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/458 - H01L2224/45891
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H01L2224/45895 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/458 - H01L2224/45891
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H01L2224/45898 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/45899 9 Coating material
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H01L2224/459 10 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/45901 11 the principal constituent melting at a temperature of less than 400°C
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H01L2224/45905 12 Gallium (Ga) as principal constituent
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H01L2224/45909 12 Indium (In) as principal constituent
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H01L2224/45911 12 Tin (Sn) as principal constituent
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H01L2224/45913 12 Bismuth (Bi) as principal constituent
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H01L2224/45914 12 Thallium (Tl) as principal constituent
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H01L2224/45916 12 Lead (Pb) as principal constituent
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H01L2224/45917 11 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/45918 12 Zinc (Zn) as principal constituent
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H01L2224/4592 12 Antimony (Sb) as principal constituent
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H01L2224/45923 12 Magnesium (Mg) as principal constituent
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H01L2224/45924 12 Aluminium (Al) as principal constituent
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H01L2224/45938 11 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/45939 12 Silver (Ag) as principal constituent
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H01L2224/45944 12 Gold (Au) as principal constituent
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H01L2224/45947 12 Copper (Cu) as principal constituent
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H01L2224/45949 12 Manganese (Mn) as principal constituent
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H01L2224/45955 12 Nickel (Ni) as principal constituent
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H01L2224/45957 12 Cobalt (Co) as principal constituent
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H01L2224/4596 12 Iron (Fe) as principal constituent
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H01L2224/45963 11 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/45964 12 Palladium (Pd) as principal constituent
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H01L2224/45966 12 Titanium (Ti) as principal constituent
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H01L2224/45969 12 Platinum (Pt) as principal constituent
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H01L2224/4597 12 Zirconium (Zr) as principal constituent
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H01L2224/45971 12 Chromium (Cr) as principal constituent
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H01L2224/45972 12 Vanadium (V) as principal constituent
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H01L2224/45973 12 Rhodium (Rh) as principal constituent
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H01L2224/45976 12 Ruthenium (Ru) as principal constituent
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H01L2224/45978 12 Iridium (Ir) as principal constituent
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H01L2224/45979 12 Niobium (Nb) as principal constituent
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H01L2224/4598 12 Molybdenum (Mo) as principal constituent
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H01L2224/45981 12 Tantalum (Ta) as principal constituent
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H01L2224/45983 12 Rhenium (Re) as principal constituent
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H01L2224/45984 12 Tungsten (W) as principal constituent
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H01L2224/45986 10 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/45987 11 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/45988)
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H01L2224/45988 11 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4599 10 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/45991 11 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/45993 10 with a principal constituent of the material being a solid not provided for in groups H01L2224/459 - H01L2224/45991, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/45994 10 with a principal constituent of the material being a liquid not provided for in groups H01L2224/459 - H01L2224/45991
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H01L2224/45995 10 with a principal constituent of the material being a gas not provided for in groups H01L2224/459 - H01L2224/45991
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H01L2224/45998 10 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/45999 8 Shape or distribution of the fillers
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H01L2224/46 4 of a plurality of wire connectors
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H01L2224/47 3 Structure, shape, material or disposition of the wire connectors after the connecting process
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H01L2224/48 4 of an individual wire connector
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H01L2224/4801 5 Structure
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H01L2224/48011 6 Length
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H01L2224/4805 5 Shape
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H01L2224/4807 6 of bonding interfaces, e.g. interlocking features
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H01L2224/4809 6 Loop shape
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H01L2224/48091 7 Arched
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H01L2224/48092 7 Helix
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H01L2224/48095 7 Kinked
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H01L2224/48096 8 the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
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H01L2224/48097 8 the kinked part being in proximity to the bonding area outside the semiconductor or solid-state body
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H01L2224/481 5 Disposition
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H01L2224/48101 6 Connecting bonding areas at the same height, e.g. horizontal bond
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H01L2224/48105 6 Connecting bonding areas at different heights
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H01L2224/48106 7 the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
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H01L2224/48108 7 the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout
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H01L2224/4811 6 Connecting to a bonding area of the semiconductor or solid-state body located at the far end of the body with respect to the bonding area outside the semiconductor or solid-state body
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H01L2224/48111 6 the wire connector extending above another semiconductor or solid-state body
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H01L2224/4813 6 Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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H01L2224/48132 7 with an intermediate bond, e.g. continuous wire daisy chain
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H01L2224/48135 6 Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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H01L2224/48137 7 the bodies being arranged next to each other, e.g. on a common substrate
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H01L2224/48138 8 the wire connector connecting to a bonding area disposed in a recess of the surface
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H01L2224/48139 8 with an intermediate bond, e.g. continuous wire daisy chain
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H01L2224/4814 8 the wire connector connecting to a bonding area protruding from the surface
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H01L2224/48141 7 the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
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H01L2224/48145 7 the bodies being stacked
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H01L2224/48147 8 with an intermediate bond, e.g. continuous wire daisy chain
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H01L2224/48148 8 the wire connector connecting to a bonding area disposed in a recess of the surface
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H01L2224/48149 8 the wire connector connecting to a bonding area protruding from the surface
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H01L2224/48151 6 Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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H01L2224/48153 7 the body and the item being arranged next to each other, e.g. on a common substrate
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H01L2224/48155 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/48157 9 connecting the wire to a bond pad of the item
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H01L2224/48158 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/48159 10 the bond pad protruding from the surface of the item
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H01L2224/4816 9 connecting the wire to a pin of the item
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H01L2224/48163 9 connecting the wire to a potential ring of the item
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H01L2224/48165 9 connecting the wire to a via metallisation of the item
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H01L2224/48175 8 the item being metallic
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H01L2224/48177 9 connecting the wire to a bond pad of the item
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H01L2224/48178 9 the bond pad being disposed in a recess of the surface of the item
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H01L2224/48179 9 the bond pad protruding from the surface of the item
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H01L2224/48183 9 connecting the wire to a potential ring of the item
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H01L2224/48195 8 the item being a discrete passive component
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H01L2224/48221 7 the body and the item being stacked
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H01L2224/48225 8 the item being non-metallic, e.g. insulating substrate with or without metallisation
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H01L2224/48227 9 connecting the wire to a bond pad of the item
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H01L2224/48228 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/48229 10 the bond pad protruding from the surface of the item
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H01L2224/4823 9 connecting the wire to a pin of the item
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H01L2224/48233 9 connecting the wire to a potential ring of the item
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H01L2224/48235 9 connecting the wire to a via metallisation of the item
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H01L2224/48237 9 connecting the wire to a die pad of the item
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H01L2224/4824 9 Connecting between the body and an opposite side of the item with respect to the body
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H01L2224/48245 8 the item being metallic
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H01L2224/48247 9 connecting the wire to a bond pad of the item
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H01L2224/48248 10 the bond pad being disposed in a recess of the surface of the item
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H01L2224/48249 10 the bond pad protruding from the surface of the item
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H01L2224/48253 9 connecting the wire to a potential ring of the item
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H01L2224/48257 9 connecting the wire to a die pad of the item
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H01L2224/4826 9 Connecting between the body and an opposite side of the item with respect to the body
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H01L2224/48265 8 the item being a discrete passive component
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H01L2224/484 5 Connecting portions
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H01L2224/4845 6 Details of ball bonds
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H01L2224/48451 7 Shape
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H01L2224/48453 8 of the interface with the bonding area
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H01L2224/48455 6 Details of wedge bonds
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H01L2224/48456 7 Shape
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H01L2224/48458 8 of the interface with the bonding area
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H01L2224/4846 6 with multiple bonds on the same bonding area
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H01L2224/48463 6 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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H01L2224/48464 7 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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H01L2224/48465 7 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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H01L2224/4847 6 the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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H01L2224/48471 7 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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H01L2224/48472 7 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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H01L2224/48475 6 connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
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H01L2224/48476 7 between the wire connector and the bonding area
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H01L2224/48477 8 being a pre-ball (i.e. a ball formed by capillary bonding)
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H01L2224/48478 9 the connecting portion being a wedge bond, i.e. wedge on pre-ball
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H01L2224/48479 10 on the semiconductor or solid-state body
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H01L2224/4848 10 outside the semiconductor or solid-state body
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H01L2224/48481 9 the connecting portion being a ball bond, i.e. ball on pre-ball
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H01L2224/48482 10 on the semiconductor or solid-state body
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H01L2224/48483 10 outside the semiconductor or solid-state body
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H01L2224/48484 9 being a plurality of pre-balls disposed side-to-side
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H01L2224/48485 10 the connecting portion being a wedge bond, i.e. wedge on pre-ball
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H01L2224/48486 11 on the semiconductor or solid-state body
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H01L2224/48487 11 outside the semiconductor or solid-state body
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H01L2224/48488 10 the connecting portion being a ball bond, i.e. ball on pre-ball
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H01L2224/48489 11 on the semiconductor or solid-state body
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H01L2224/4849 11 outside the semiconductor or solid-state body
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H01L2224/48491 8 being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
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H01L2224/48496 7 not being interposed between the wire connector and the bonding area
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H01L2224/48499 7 Material of the auxiliary connecting means
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H01L2224/485 5 Material
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H01L2224/48505 6 at the bonding interface
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H01L2224/48506 7 comprising an eutectic alloy
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H01L2224/48507 7 comprising an intermetallic compound
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H01L2224/4851 7 Morphology of the connecting portion, e.g. grain size distribution
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H01L2224/48511 8 Heat affected zone [HAZ]
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H01L2224/4852 7 Bonding interface between the connecting portion and the bonding area
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H01L2224/48599 7 Principal constituent of the connecting portion of the wire connector being Gold (Au)
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H01L2224/486 8 with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/48601 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/48605 10 Gallium (Ga) as principal constituent
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H01L2224/48609 10 Indium (In) as principal constituent
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H01L2224/48611 10 Tin (Sn) as principal constituent
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H01L2224/48613 10 Bismuth (Bi) as principal constituent
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H01L2224/48614 10 Thallium (Tl) as principal constituent
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H01L2224/48616 10 Lead (Pb) as principal constituent
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H01L2224/48617 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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H01L2224/48618 10 Zinc (Zn) as principal constituent
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H01L2224/4862 10 Antimony (Sb) as principal constituent
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H01L2224/48623 10 Magnesium (Mg) as principal constituent
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H01L2224/48624 10 Aluminium (Al) as principal constituent
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H01L2224/48638 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/48639 10 Silver (Ag) as principal constituent
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H01L2224/48644 10 Gold (Au) as principal constituent
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H01L2224/48647 10 Copper (Cu) as principal constituent
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H01L2224/48649 10 Manganese (Mn) as principal constituent
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H01L2224/48655 10 Nickel (Ni) as principal constituent
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H01L2224/48657 10 Cobalt (Co) as principal constituent
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H01L2224/4866 10 Iron (Fe) as principal constituent
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H01L2224/48663 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/48664 10 Palladium (Pd) as principal constituent
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H01L2224/48666 10 Titanium (Ti) as principal constituent
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H01L2224/48669 10 Platinum (Pt) as principal constituent
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H01L2224/4867 10 Zirconium (Zr) as principal constituent
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H01L2224/48671 10 Chromium (Cr) as principal constituent
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H01L2224/48672 10 Vanadium (V) as principal constituent
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H01L2224/48673 10 Rhodium (Rh) as principal constituent
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H01L2224/48678 10 Iridium (Ir) as principal constituent
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H01L2224/48679 10 Niobium (Nb) as principal constituent
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H01L2224/4868 10 Molybdenum (Mo) as principal constituent
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H01L2224/48681 10 Tantalum (Ta) as principal constituent
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H01L2224/48683 10 Rhenium (Re) as principal constituent
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H01L2224/48684 10 Tungsten (W) as principal constituent
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H01L2224/48686 8 with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material
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H01L2224/48687 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/48688)
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H01L2224/48688 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4869 8 with a principal constituent of the bonding area being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/48691 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/48693 8 with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/486 - H01L2224/4869, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/48694 8 with a principal constituent of the bonding area being a liquid not provided for in groups H01L2224/486 - H01L2224/4869
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H01L2224/48698 8 with a principal constituent of the bonding area being a combination of two or more material regions, i.e. being a hybrid material, e.g. segmented structures, island patterns
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H01L2224/48699 7 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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H01L2224/487 8 with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/48701 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/48705 10 Gallium (Ga) as principal constituent
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H01L2224/48709 10 Indium (In) as principal constituent
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H01L2224/48711 10 Tin (Sn) as principal constituent
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H01L2224/48713 10 Bismuth (Bi) as principal constituent
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H01L2224/48714 10 Thallium (Tl) as principal constituent
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H01L2224/48716 10 Lead (Pb) as principal constituent
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H01L2224/48717 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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H01L2224/48718 10 Zinc (Zn) as principal constituent
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H01L2224/4872 10 Antimony (Sb) as principal constituent
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H01L2224/48723 10 Magnesium (Mg) as principal constituent
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H01L2224/48724 10 Aluminium (Al) as principal constituent
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H01L2224/48738 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/48739 10 Silver (Ag) as principal constituent
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H01L2224/48744 10 Gold (Au) as principal constituent
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H01L2224/48747 10 Copper (Cu) as principal constituent
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H01L2224/48749 10 Manganese (Mn) as principal constituent
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H01L2224/48755 10 Nickel (Ni) as principal constituent
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H01L2224/48757 10 Cobalt (Co) as principal constituent
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H01L2224/4876 10 Iron (Fe) as principal constituent
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H01L2224/48763 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/48764 10 Palladium (Pd) as principal constituent
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H01L2224/48766 10 Titanium (Ti) as principal constituent
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H01L2224/48769 10 Platinum (Pt) as principal constituent
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H01L2224/4877 10 Zirconium (Zr) as principal constituent
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H01L2224/48771 10 Chromium (Cr) as principal constituent
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H01L2224/48772 10 Vanadium (V) as principal constituent
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H01L2224/48773 10 Rhodium (Rh) as principal constituent
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H01L2224/48778 10 Iridium (Ir) as principal constituent
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H01L2224/48779 10 Niobium (Nb) as principal constituent
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H01L2224/4878 10 Molybdenum (Mo) as principal constituent
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H01L2224/48781 10 Tantalum (Ta) as principal constituent
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H01L2224/48783 10 Rhenium (Re) as principal constituent
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H01L2224/48784 10 Tungsten (W) as principal constituent
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H01L2224/48786 8 with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material
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H01L2224/48787 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/48788)
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H01L2224/48788 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4879 8 with a principal constituent of the bonding area being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/48791 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/48793 8 with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/487 - H01L2224/4879, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/48794 8 with a principal constituent of the bonding area being a liquid not provided for in groups H01L2224/487 - H01L2224/4879
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H01L2224/48798 8 with a principal constituent of the bonding area being a combination of two or more material regions, i.e. being a hybrid material, e.g. segmented structures, island patterns
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H01L2224/48799 7 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
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H01L2224/488 8 with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/48801 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/48805 10 Gallium (Ga) as principal constituent
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H01L2224/48809 10 Indium (In) as principal constituent
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H01L2224/48811 10 Tin (Sn) as principal constituent
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H01L2224/48813 10 Bismuth (Bi) as principal constituent
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H01L2224/48814 10 Thallium (Tl) as principal constituent
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H01L2224/48816 10 Lead (Pb) as principal constituent
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H01L2224/48817 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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H01L2224/48818 10 Zinc (Zn) as principal constituent
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H01L2224/4882 10 Antimony (Sb) as principal constituent
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H01L2224/48823 10 Magnesium (Mg) as principal constituent
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H01L2224/48824 10 Aluminium (Al) as principal constituent
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H01L2224/48838 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/48839 10 Silver (Ag) as principal constituent
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H01L2224/48844 10 Gold (Au) as principal constituent
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H01L2224/48847 10 Copper (Cu) as principal constituent
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H01L2224/48849 10 Manganese (Mn) as principal constituent
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H01L2224/48855 10 Nickel (Ni) as principal constituent
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H01L2224/48857 10 Cobalt (Co) as principal constituent
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H01L2224/4886 10 Iron (Fe) as principal constituent
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H01L2224/48863 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/48864 10 Palladium (Pd) as principal constituent
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H01L2224/48866 10 Titanium (Ti) as principal constituent
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H01L2224/48869 10 Platinum (Pt) as principal constituent
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H01L2224/4887 10 Zirconium (Zr) as principal constituent
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H01L2224/48871 10 Chromium (Cr) as principal constituent
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H01L2224/48872 10 Vanadium (V) as principal constituent
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H01L2224/48873 10 Rhodium (Rh) as principal constituent
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H01L2224/48878 10 Iridium (Ir) as principal constituent
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H01L2224/48879 10 Niobium (Nb) as principal constituent
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H01L2224/4888 10 Molybdenum (Mo) as principal constituent
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H01L2224/48881 10 Tantalum (Ta) as principal constituent
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H01L2224/48883 10 Rhenium (Re) as principal constituent
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H01L2224/48884 10 Tungsten (W) as principal constituent
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H01L2224/48886 8 with a principal constituent of the bonding area being a non metallic, non metalloid inorganic material
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H01L2224/48887 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/48888)
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H01L2224/48888 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/4889 8 with a principal constituent of the bonding area being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/48891 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/48893 8 with a principal constituent of the bonding area being a solid not provided for in groups H01L2224/488 - H01L2224/4889, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/48894 8 with a principal constituent of the bonding area being a liquid not provided for in groups H01L2224/488 - H01L2224/4889
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H01L2224/48898 8 with a principal constituent of the bonding area being a combination of two or more material regions, i.e. being a hybrid material, e.g. segmented structures, island patterns
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H01L2224/4899 5 Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
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H01L2224/48991 6 being formed on the semiconductor or solid-state body to be connected
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H01L2224/48992 7 Reinforcing structures
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H01L2224/48993 7 Alignment aids
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H01L2224/48996 6 being formed on an item to be connected not being a semiconductor or solid-state body
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H01L2224/48997 7 Reinforcing structures
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H01L2224/48998 7 Alignment aids
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H01L2224/49 4 of a plurality of wire connectors
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H01L2224/4901 5 Structure
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H01L2224/4903 6 Connectors having different sizes, e.g. different diameters
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H01L2224/4905 5 Shape
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H01L2224/49051 6 Connectors having different shapes
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H01L2224/49052 7 Different loop heights
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H01L2224/4909 6 Loop shape arrangement
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H01L2224/49095 7 parallel in plane
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H01L2224/49096 8 horizontal
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H01L2224/49097 8 vertical
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H01L2224/491 5 Disposition
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H01L2224/49105 6 Connecting at different heights
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H01L2224/49107 7 on the semiconductor or solid-state body
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H01L2224/49109 7 outside the semiconductor or solid-state body
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H01L2224/4911 6 the connectors being bonded to at least one common bonding area, e.g. daisy chain
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H01L2224/49111 7 the connectors connecting two common bonding areas, e.g. Litz or braid wires
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H01L2224/49112 7 the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
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H01L2224/49113 7 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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H01L2224/4912 6 Layout
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H01L2224/4917 7 Crossed wires
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H01L2224/49171 7 Fan-out arrangements
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H01L2224/49173 8 Radial fan-out arrangements
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H01L2224/49174 7 Stacked arrangements
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H01L2224/49175 7 Parallel arrangements
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H01L2224/49176 8 Wire connectors having the same loop shape and height
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H01L2224/49177 7 Combinations of different arrangements
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H01L2224/49179 8 Corner adaptations, i.e. disposition of the wire connectors at the corners of the semiconductor or solid-state body
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H01L2224/4918 6 being disposed on at least two different sides of the body, e.g. dual array
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H01L2224/494 5 Connecting portions
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H01L2224/4941 6 the connecting portions being stacked
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H01L2224/4942 7 Ball bonds
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H01L2224/49421 8 on the semiconductor or solid-state body
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H01L2224/49422 8 outside the semiconductor or solid-state body
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H01L2224/49425 7 Wedge bonds
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H01L2224/49426 8 on the semiconductor or solid-state body
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H01L2224/49427 8 outside the semiconductor or solid-state body
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H01L2224/49429 7 Wedge and ball bonds
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H01L2224/4943 6 the connecting portions being staggered
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H01L2224/49431 7 on the semiconductor or solid-state body
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H01L2224/49433 7 outside the semiconductor or solid-state body
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H01L2224/4945 6 Wire connectors having connecting portions of different types on the semiconductor or solid-state body, e.g. regular and reverse stitches
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H01L2224/495 5 Material
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H01L2224/49505 6 Connectors having different materials
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H01L2224/50 2 Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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H01L2224/63 2 Connectors not provided for in any of the groups H01L2224/10 - H01L2224/50 and subgroups; Manufacturing methods related thereto
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H01L2224/64 3 Manufacturing methods
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H01L2224/65 3 Structure, shape, material or disposition of the connectors prior to the connecting process
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H01L2224/66 4 of an individual connector
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H01L2224/67 4 of a plurality of connectors
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H01L2224/68 3 Structure, shape, material or disposition of the connectors after the connecting process
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H01L2224/69 4 of an individual connector
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H01L2224/70 4 of a plurality of connectors
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H01L2224/71 1 Means for bonding not being attached to, or not being formed on, the surface to be connected
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H01L2224/72 2 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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H01L2224/73 1 Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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H01L2224/731 2 Location prior to the connecting process
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H01L2224/73101 3 on the same surface
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H01L2224/73103 4 Bump and layer connectors
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H01L2224/73104 5 the bump connector being embedded into the layer connector
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H01L2224/73151 3 on different surfaces
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H01L2224/73153 4 Bump and layer connectors
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H01L2224/732 2 Location after the connecting process
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H01L2224/73201 3 on the same surface
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H01L2224/73203 4 Bump and layer connectors
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H01L2224/73204 5 the bump connector being embedded into the layer connector
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H01L2224/73205 4 Bump and strap connectors
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H01L2224/73207 4 Bump and wire connectors
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H01L2224/73209 4 Bump and HDI connectors
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H01L2224/73211 4 Bump and TAB connectors
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H01L2224/73213 4 Layer and strap connectors
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H01L2224/73215 4 Layer and wire connectors
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H01L2224/73217 4 Layer and HDI connectors
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H01L2224/73219 4 Layer and TAB connectors
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H01L2224/73221 4 Strap and wire connectors
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H01L2224/73223 4 Strap and HDI connectors
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H01L2224/73225 4 Strap and TAB connectors
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H01L2224/73227 4 Wire and HDI connectors
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H01L2224/73229 4 Wire and TAB connectors
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H01L2224/73231 4 HDI and TAB connectors
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H01L2224/73251 3 on different surfaces
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H01L2224/73253 4 Bump and layer connectors
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H01L2224/73255 4 Bump and strap connectors
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H01L2224/73257 4 Bump and wire connectors
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H01L2224/73259 4 Bump and HDI connectors
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H01L2224/73261 4 Bump and TAB connectors
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H01L2224/73263 4 Layer and strap connectors
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H01L2224/73265 4 Layer and wire connectors
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H01L2224/73267 4 Layer and HDI connectors
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H01L2224/73269 4 Layer and TAB connectors
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H01L2224/73271 4 Strap and wire connectors
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H01L2224/73273 4 Strap and HDI connectors
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H01L2224/73275 4 Strap and TAB connectors
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H01L2224/73277 4 Wire and HDI connectors
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H01L2224/73279 4 Wire and TAB connectors
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H01L2224/73281 4 HDI and TAB connectors
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H01L2224/74 1 Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
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H01L2224/741 2 Apparatus for manufacturing means for bonding, e.g. connectors
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H01L2224/742 3 Apparatus for manufacturing bump connectors
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H01L2224/743 3 Apparatus for manufacturing layer connectors
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H01L2224/744 3 Apparatus for manufacturing strap connectors
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H01L2224/745 3 Apparatus for manufacturing wire connectors
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H01L2224/749 3 Tools for reworking, e.g. for shaping
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H01L2224/75 2 Apparatus for connecting with bump connectors or layer connectors
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H01L2224/75001 3 Calibration means
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H01L2224/7501 3 Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
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H01L2224/751 3 Means for controlling the bonding environment, e.g. valves, vacuum pumps
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H01L2224/75101 4 Chamber
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H01L2224/75102 5 Vacuum chamber
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H01L2224/7511 5 High pressure chamber
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H01L2224/7515 3 Means for applying permanent coating, e.g. in-situ coating
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H01L2224/75151 4 Means for direct writing
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H01L2224/75152 5 Syringe
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H01L2224/75153 6 integrated into the bonding head
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H01L2224/75155 5 Jetting means, e.g. ink jet
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H01L2224/75158 5 including a laser
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H01L2224/75161 4 Means for screen printing, e.g. roller, squeegee, screen stencil
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H01L2224/7517 4 Means for applying a preform, e.g. laminator
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H01L2224/75171 5 including a vacuum-bag
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H01L2224/7518 4 Means for blanket deposition
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H01L2224/75181 5 for spin coating, i.e. spin coater
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H01L2224/75182 5 for curtain coating
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H01L2224/75183 5 for immersion coating, i.e. bath
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H01L2224/75184 5 for spray coating, i.e. nozzle
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H01L2224/75185 5 Means for physical vapour deposition [PVD], e.g. evaporation, sputtering
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H01L2224/75186 5 Means for sputtering, e.g. target
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H01L2224/75187 5 Means for evaporation
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H01L2224/75188 5 Means for chemical vapour deposition [CVD], e.g. for laser CVD
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H01L2224/75189 5 Means for plating, e.g. for electroplating, electroless plating
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H01L2224/752 3 Protection means against electrical discharge
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H01L2224/7525 3 Means for applying energy, e.g. heating means
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H01L2224/75251 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75252 4 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75253 4 adapted for localised heating
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H01L2224/7526 4 Polychromatic heating lamp
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H01L2224/75261 4 Laser
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H01L2224/75262 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75263 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75264 4 by induction heating, i.e. coils
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H01L2224/75265 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75266 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75267 4 Flame torch, e.g. hydrogen torch
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H01L2224/75268 4 Discharge electrode
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H01L2224/75269 5 Shape of the discharge electrode
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H01L2224/7527 5 Material of the discharge electrode
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H01L2224/75271 5 Circuitry of the discharge electrode
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H01L2224/75272 4 Oven
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H01L2224/7528 4 Resistance welding electrodes, i.e. for ohmic heating
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H01L2224/75281 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75282 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75283 4 by infrared heating, e.g. infrared heating lamp
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H01L2224/753 4 by means of pressure
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H01L2224/75301 5 Bonding head
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H01L2224/75302 6 Shape
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H01L2224/75303 7 of the pressing surface
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H01L2224/75304 8 being curved
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H01L2224/75305 8 comprising protrusions
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H01L2224/7531 7 of other parts
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H01L2224/75312 6 Material
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H01L2224/75313 6 Removable bonding head
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H01L2224/75314 6 Auxiliary members on the pressing surface
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H01L2224/75315 7 Elastomer inlay
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H01L2224/75316 8 with retaining mechanisms
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H01L2224/75317 7 Removable auxiliary member
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H01L2224/75318 7 Shape of the auxiliary member
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H01L2224/7532 7 Material of the auxiliary member
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H01L2224/75343 5 by ultrasonic vibrations
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H01L2224/75344 6 Eccentric cams
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H01L2224/75345 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75346 7 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75347 6 Piezoelectric transducers
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H01L2224/75348 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75349 7 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/7535 6 Stable and mobile yokes
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H01L2224/75351 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75352 7 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75353 6 Ultrasonic horns
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H01L2224/75354 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75355 7 Design, e.g. of the wave guide
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H01L2224/755 3 Cooling means
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H01L2224/75501 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75502 4 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/7555 3 Mechanical means, e.g. for planarising, pressing, stamping
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H01L2224/756 3 Means for supplying the connector to be connected in the bonding apparatus
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H01L2224/75601 4 Storing means
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H01L2224/75611 4 Feeding means
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H01L2224/75621 4 Holding means
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H01L2224/7565 3 Means for transporting the components to be connected
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H01L2224/75651 4 Belt conveyor
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H01L2224/75652 4 Chain conveyor
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H01L2224/75653 4 Vibrating conveyor
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H01L2224/75654 4 Pneumatic conveyor
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H01L2224/75655 4 in a fluid
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H01L2224/757 3 Means for aligning
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H01L2224/75701 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75702 4 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75703 4 Mechanical holding means
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H01L2224/75704 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75705 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75723 4 Electrostatic holding means
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H01L2224/75724 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75725 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75733 4 Magnetic holding means
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H01L2224/75734 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75735 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75743 4 Suction holding means
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H01L2224/75744 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75745 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/75753 4 Means for optical alignment, e.g. sensors
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H01L2224/75754 4 Guiding structures
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H01L2224/75755 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/75756 5 in the upper part of the bonding apparatus, e.g. in the bonding head
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H01L2224/758 3 Means for moving parts
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H01L2224/75801 4 Lower part of the bonding apparatus, e.g. XY table
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H01L2224/75802 5 Rotational mechanism
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H01L2224/75803 6 Pivoting mechanism
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H01L2224/75804 5 Translational mechanism
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H01L2224/75821 4 Upper part of the bonding apparatus, i.e. bonding head
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H01L2224/75822 5 Rotational mechanism
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H01L2224/75823 6 Pivoting mechanism
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H01L2224/75824 5 Translational mechanism
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H01L2224/75841 4 of the bonding head
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H01L2224/75842 5 Rotational mechanism
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H01L2224/75843 6 Pivoting mechanism
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H01L2224/759 3 Means for monitoring the connection process
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H01L2224/75901 4 using a computer, e.g. fully- or semi-automatic bonding
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H01L2224/7592 4 Load or pressure adjusting means, e.g. sensors
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H01L2224/75925 4 Vibration adjusting means, e.g. sensors
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H01L2224/7595 3 Means for forming additional members
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H01L2224/7598 3 specially adapted for batch processes
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H01L2224/75981 3 Apparatus chuck
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H01L2224/75982 4 Shape
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H01L2224/75983 5 of the mounting surface
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H01L2224/75984 5 of other portions
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H01L2224/75985 4 Material
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H01L2224/75986 4 Auxiliary members on the pressing surface
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H01L2224/75987 5 Shape of the auxiliary member
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H01L2224/75988 5 Material of the auxiliary member
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H01L2224/76 2 Apparatus for connecting with build-up interconnects
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H01L2224/76001 3 Calibration means
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H01L2224/7601 3 Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
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H01L2224/761 3 Means for controlling the bonding environment, e.g. valves, vacuum pumps
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H01L2224/76101 4 Chamber
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H01L2224/76102 5 Vacuum chamber
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H01L2224/7611 5 High pressure chamber
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H01L2224/7615 3 Means for depositing
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H01L2224/76151 4 Means for direct writing
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H01L2224/76152 5 Syringe
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H01L2224/76155 5 Jetting means, e.g. ink jet
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H01L2224/76158 5 including a laser
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H01L2224/76161 4 Means for screen printing, e.g. roller, squeegee, screen stencil
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H01L2224/7617 4 Means for applying a preform, e.g. laminator
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H01L2224/76171 5 including a vacuum-bag
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H01L2224/7618 4 Means for blanket deposition
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H01L2224/76181 5 for spin coating, i.e. spin coater
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H01L2224/76182 5 for curtain coating
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H01L2224/76183 5 for immersion coating, i.e. bath
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H01L2224/76184 5 for spray coating, i.e. nozzle
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H01L2224/76185 5 Means for physical vapour deposition [PVD]
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H01L2224/76186 6 Means for sputtering, e.g. target
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H01L2224/76187 6 Means for evaporation
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H01L2224/76188 5 Means for chemical vapour deposition [CVD], e.g. for laser CVD
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H01L2224/76189 5 Means for plating, e.g. for electroplating, electroless plating
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H01L2224/762 3 Protection means against electrical discharge
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H01L2224/7625 3 Means for applying energy, e.g. heating means
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H01L2224/76251 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76252 4 in the upper part of the bonding apparatus
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H01L2224/76253 4 adapted for localised heating
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H01L2224/7626 4 Polychromatic heating lamp
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H01L2224/76261 4 Laser
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H01L2224/76262 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76263 5 in the upper part of the bonding apparatus
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H01L2224/76264 4 by induction heating, i.e. coils
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H01L2224/76265 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76266 5 in the upper part of the bonding apparatus
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H01L2224/76267 4 Flame torch, e.g. hydrogen torch
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H01L2224/76268 4 Discharge electrode
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H01L2224/76269 5 Shape of the discharge electrode
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H01L2224/7627 5 Material of the discharge electrode
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H01L2224/76271 5 Circuitry of the discharge electrode
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H01L2224/76272 4 Oven
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H01L2224/7628 4 Resistance welding electrodes, i.e. for ohmic heating
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H01L2224/76281 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76282 5 in the upper part of the bonding apparatus
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H01L2224/76283 4 by infrared heating, e.g. infrared heating lamp
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H01L2224/763 4 by means of pressure
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H01L2224/76301 5 Pressing head
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H01L2224/76302 6 Shape
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H01L2224/76303 7 of the pressing surface
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H01L2224/76304 8 being curved
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H01L2224/76305 8 comprising protrusions
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H01L2224/7631 7 of other parts
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H01L2224/76312 6 Material
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H01L2224/76313 6 Removable pressing head
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H01L2224/76314 6 Auxiliary members on the pressing surface
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H01L2224/76315 7 Elastomer inlay
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H01L2224/76316 8 with retaining mechanisms
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H01L2224/76317 7 Removable auxiliary member
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H01L2224/76318 7 Shape of the auxiliary member
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H01L2224/7632 7 Material of the auxiliary member
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H01L2224/76343 5 by ultrasonic vibrations
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H01L2224/76344 6 Eccentric cams
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H01L2224/76345 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76346 7 in the upper part of the bonding apparatus
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H01L2224/76347 6 Piezoelectric transducers
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H01L2224/76348 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76349 7 in the upper part of the bonding apparatus
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H01L2224/7635 6 Stable and mobile yokes
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H01L2224/76351 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76352 7 in the upper part of the bonding apparatus
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H01L2224/76353 6 Ultrasonic horns
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H01L2224/76354 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76355 7 Design, e.g. of the wave guide
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H01L2224/765 3 Cooling means
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H01L2224/76501 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76502 4 in the upper part of the bonding apparatus
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H01L2224/7655 3 Mechanical means, e.g. for planarising, pressing, stamping
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H01L2224/76552 4 for drilling
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H01L2224/76554 4 for abrasive blasting, e.g. sand blasting, wet blasting, hydro-blasting, dry ice blasting
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H01L2224/766 3 Means for supplying the material of the interconnect
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H01L2224/76601 4 Storing means
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H01L2224/76611 4 Feeding means
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H01L2224/76621 4 Holding means
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H01L2224/7665 3 Means for transporting the components to be connected
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H01L2224/76651 4 Belt conveyor
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H01L2224/76652 4 Chain conveyor
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H01L2224/76653 4 Vibrating conveyor
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H01L2224/76654 4 Pneumatic conveyor
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H01L2224/76655 4 in a fluid
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H01L2224/767 3 Means for aligning
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H01L2224/76701 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76702 4 in the upper part of the bonding apparatus
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H01L2224/76703 4 Mechanical holding means
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H01L2224/76704 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76705 5 in the upper part of the bonding apparatus
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H01L2224/76723 4 Electrostatic holding means
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H01L2224/76724 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76725 5 in the upper part of the bonding apparatus
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H01L2224/76733 4 Magnetic holding means
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H01L2224/76734 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76735 5 in the upper part of the bonding apparatus
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H01L2224/76743 4 Suction holding means
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H01L2224/76744 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76745 5 in the upper part of the bonding apparatus
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H01L2224/76753 4 Means for optical alignment, e.g. sensors
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H01L2224/76754 4 Guiding structures
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H01L2224/76755 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/76756 5 in the upper part of the bonding apparatus
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H01L2224/768 3 Means for moving parts
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H01L2224/76801 4 Lower part of the bonding apparatus, e.g. XY table
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H01L2224/76802 5 Rotational mechanism
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H01L2224/76803 6 Pivoting mechanism
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H01L2224/76804 5 Translational mechanism
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H01L2224/76821 4 Upper part of the bonding apparatus, i.e. bonding head
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H01L2224/76822 5 Rotational mechanism
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H01L2224/76823 6 Pivoting mechanism
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H01L2224/76824 5 Translational mechanism
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H01L2224/76841 4 of the bonding head
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H01L2224/76842 5 Rotational mechanism
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H01L2224/76843 6 Pivoting mechanism
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H01L2224/769 3 Means for monitoring the connection process
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H01L2224/76901 4 using a computer, e.g. fully- or semi-automatic bonding
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H01L2224/7692 4 Load or pressure adjusting means, e.g. sensors
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H01L2224/76925 4 Vibration adjusting means, e.g. sensors
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H01L2224/7695 3 Means for forming additional members
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H01L2224/7698 3 specially adapted for batch processes
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H01L2224/76981 3 Apparatus chuck
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H01L2224/76982 4 Shape
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H01L2224/76983 5 of the mounting surface
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H01L2224/76984 5 of other portions
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H01L2224/76985 4 Material
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H01L2224/76986 4 Auxiliary members on the pressing surface
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H01L2224/76987 5 Shape of the auxiliary member
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H01L2224/76988 5 Material of the auxiliary member
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H01L2224/77 2 Apparatus for connecting with strap connectors
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H01L2224/77001 3 Calibration means
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H01L2224/7701 3 Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
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H01L2224/771 3 Means for controlling the bonding environment, e.g. valves, vacuum pumps
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H01L2224/77101 4 Chamber
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H01L2224/77102 5 Vacuum chamber
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H01L2224/7711 5 High pressure chamber
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H01L2224/7715 3 Means for applying permanent coating, e.g. in-situ coating
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H01L2224/77151 4 Means for direct writing
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H01L2224/77152 5 Syringe
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H01L2224/77153 6 integrated into the capillary or wedge
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H01L2224/77155 5 Jetting means, e.g. ink jet
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H01L2224/77158 5 including a laser
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H01L2224/77161 4 Means for screen printing, e.g. roller, squeegee, screen stencil
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H01L2224/7717 4 Means for applying a preform, e.g. laminator
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H01L2224/77171 5 including a vacuum-bag
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H01L2224/7718 4 Means for blanket deposition
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H01L2224/77181 5 for spin coating, i.e. spin coater
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H01L2224/77182 5 for curtain coating
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H01L2224/77183 5 for immersion coating, i.e. bath
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H01L2224/77184 5 for spray coating, i.e. nozzle
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H01L2224/77185 5 Means for physical vapour deposition [PVD], e.g. evaporation, sputtering
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H01L2224/77186 5 Means for sputtering, e.g. target
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H01L2224/77187 5 Means for evaporation
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H01L2224/77188 5 Means for chemical vapour deposition [CVD], e.g. for laser CVD
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H01L2224/77189 5 Means for plating, e.g. for electroplating, electroless plating
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H01L2224/772 3 Protection means against electrical discharge
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H01L2224/7725 3 Means for applying energy, e.g. heating means
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H01L2224/77251 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77252 4 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77253 4 adapted for localised heating
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H01L2224/7726 4 Polychromatic heating lamp
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H01L2224/77261 4 Laser
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H01L2224/77262 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77263 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77264 4 by induction heating, i.e. coils
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H01L2224/77265 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77266 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77267 4 Flame torch, e.g. hydrogen torch
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H01L2224/77268 4 Discharge electrode
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H01L2224/77269 5 Shape of the discharge electrode
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H01L2224/7727 5 Material of the discharge electrode
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H01L2224/77271 5 Circuitry of the discharge electrode
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H01L2224/77272 4 Oven
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H01L2224/7728 4 Resistance welding electrodes, i.e. for ohmic heating
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H01L2224/77281 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77282 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77283 4 by infrared heating, e.g. infrared heating lamp
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H01L2224/773 4 by means of pressure
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H01L2224/77313 5 Wedge
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H01L2224/77314 6 Shape
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H01L2224/77315 7 of the pressing surface, e.g. tip or head
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H01L2224/77316 8 comprising protrusions
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H01L2224/77317 7 of other portions
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H01L2224/77318 8 inside the capillary
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H01L2224/77319 8 outside the capillary
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H01L2224/7732 6 Removable wedge
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H01L2224/77321 6 Material
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H01L2224/77325 6 Auxiliary members on the pressing surface
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H01L2224/77326 7 Removable auxiliary member
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H01L2224/77327 7 Shape of the auxiliary member
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H01L2224/77328 7 Material of the auxiliary member
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H01L2224/77343 5 by ultrasonic vibrations
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H01L2224/77344 6 Eccentric cams
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H01L2224/77345 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77346 7 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77347 6 Piezoelectric transducers
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H01L2224/77348 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77349 7 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/7735 6 Stable and mobile yokes
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H01L2224/77351 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77352 7 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77353 6 Ultrasonic horns
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H01L2224/77354 7 in the lower part of the bonding apparatus, e.g. in the mounting chuck
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H01L2224/77355 7 Design, e.g. of the wave guide
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H01L2224/775 3 Cooling means
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H01L2224/77501 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77502 4 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/7755 3 Mechanical means, e.g. for severing, pressing, stamping
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H01L2224/776 3 Means for supplying the connector to be connected in the bonding apparatus
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H01L2224/77601 4 Storing means
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H01L2224/77611 4 Feeding means
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H01L2224/77621 4 Holding means, e.g. wire clampers
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H01L2224/77631 5 Means for wire tension adjustments
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H01L2224/7765 3 Means for transporting the components to be connected
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H01L2224/77651 4 Belt conveyor
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H01L2224/77652 4 Chain conveyor
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H01L2224/77653 4 Vibrating conveyor
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H01L2224/77654 4 Pneumatic conveyor
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H01L2224/77655 4 in a fluid
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H01L2224/777 3 Means for aligning
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H01L2224/77701 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77702 4 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77703 4 Mechanical holding means
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H01L2224/77704 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77705 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77723 4 Electrostatic holding means
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H01L2224/77724 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77725 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77733 4 Magnetic holding means
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H01L2224/77734 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77735 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77743 4 Suction holding means
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H01L2224/77744 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77745 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/77753 4 Means for optical alignment, e.g. sensors
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H01L2224/77754 4 Guiding structures
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H01L2224/77755 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/77756 5 in the upper part of the bonding apparatus, e.g. in the wedge
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H01L2224/778 3 Means for moving parts
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H01L2224/77801 4 Lower part of the bonding apparatus, e.g. XY table
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H01L2224/77802 5 Rotational mechanism
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H01L2224/77803 6 Pivoting mechanism
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H01L2224/77804 5 Translational mechanism
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H01L2224/77821 4 Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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H01L2224/77822 5 Rotational mechanism
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H01L2224/77823 6 Pivoting mechanism
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H01L2224/77824 5 Translational mechanism
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H01L2224/77841 4 of the pressing portion, e.g. tip or head
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H01L2224/77842 5 Rotational mechanism
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H01L2224/77843 6 Pivoting mechanism
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H01L2224/779 3 Means for monitoring the connection process
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H01L2224/77901 4 using a computer, e.g. fully- or semi-automatic bonding
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H01L2224/7792 4 Load or pressure adjusting means, e.g. sensors
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H01L2224/77925 4 Vibration adjusting means, e.g. sensors
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H01L2224/7795 3 Means for forming additional members
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H01L2224/7798 3 specially adapted for batch processes
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H01L2224/77981 3 Apparatus chuck
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H01L2224/77982 4 Shape
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H01L2224/77983 5 of the mounting surface
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H01L2224/77984 5 of other portions
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H01L2224/77985 4 Material
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H01L2224/77986 4 Auxiliary members on the pressing surface
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H01L2224/77987 5 Shape of the auxiliary member
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H01L2224/77988 5 Material of the auxiliary member
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H01L2224/78 2 Apparatus for connecting with wire connectors
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H01L2224/78001 3 Calibration means
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H01L2224/7801 3 Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
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H01L2224/781 3 Means for controlling the bonding environment, e.g. valves, vacuum pumps
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H01L2224/78101 4 Chamber
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H01L2224/78102 5 Vacuum chamber
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H01L2224/7811 5 High pressure chamber
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H01L2224/7815 3 Means for applying permanent coating, e.g. in-situ coating
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H01L2224/782 3 Protection means against electrical discharge
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H01L2224/7825 3 Means for applying energy, e.g. heating means
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H01L2224/78251 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78252 4 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78253 4 adapted for localised heating
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H01L2224/7826 4 Polychromatic heating lamp
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H01L2224/78261 4 Laser
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H01L2224/78262 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78263 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78264 4 by induction heating, i.e. coils
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H01L2224/78265 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78266 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78267 4 Flame torch, e.g. hydrogen torch
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H01L2224/78268 4 Discharge electrode
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H01L2224/78269 5 Shape of the discharge electrode
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H01L2224/7827 5 Material of the discharge electrode
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H01L2224/78271 5 Circuitry of the discharge electrode
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H01L2224/78272 4 Oven
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H01L2224/7828 4 Resistance welding electrodes, i.e. for ohmic heating
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H01L2224/78281 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78282 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78283 4 by infrared heating, e.g. infrared heating lamp
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H01L2224/783 4 by means of pressure
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H01L2224/78301 5 Capillary
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H01L2224/78302 6 Shape
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H01L2224/78303 7 of the pressing surface, e.g. tip or head
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H01L2224/78304 8 comprising protrusions
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H01L2224/78305 7 of other portions
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H01L2224/78306 8 inside the capillary
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H01L2224/78307 8 outside the capillary
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H01L2224/78308 6 Removable capillary
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H01L2224/78309 6 Material
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H01L2224/7831 6 Auxiliary members on the pressing surface
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H01L2224/78311 7 Removable auxiliary member
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H01L2224/78312 7 Shape of the auxiliary member
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H01L2224/78313 5 Wedge
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H01L2224/78314 6 Shape
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H01L2224/78315 7 of the pressing surface, e.g. tip or head
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H01L2224/78316 8 comprising protrusions
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H01L2224/78317 7 of other portions
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H01L2224/78318 8 inside the capillary
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H01L2224/78319 8 outside the capillary
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H01L2224/7832 6 Removable wedge
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H01L2224/78321 6 Material
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H01L2224/78325 6 Auxiliary members on the pressing surface
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H01L2224/78326 7 Removable auxiliary member
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H01L2224/78327 7 Shape of the auxiliary member
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H01L2224/78328 7 Material of the auxiliary member
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H01L2224/78343 5 by ultrasonic vibrations
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H01L2224/78344 6 Eccentric cams
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H01L2224/78345 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78346 7 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78347 6 Piezoelectric transducers
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H01L2224/78348 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78349 7 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/7835 6 Stable and mobile yokes
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H01L2224/78351 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78352 7 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78353 6 Ultrasonic horns
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H01L2224/78354 7 in the lower part of the bonding apparatus, e.g. in the mounting chuck
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H01L2224/78355 7 Design, e.g. of the wave guide
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H01L2224/785 3 Cooling means
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H01L2224/78501 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78502 4 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/7855 3 Mechanical means, e.g. for severing, pressing, stamping
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H01L2224/786 3 Means for supplying the connector to be connected in the bonding apparatus
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H01L2224/78601 4 Storing means
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H01L2224/78611 4 Feeding means
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H01L2224/78621 4 Holding means, e.g. wire clampers
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H01L2224/78631 5 Means for wire tension adjustments
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H01L2224/7865 3 Means for transporting the components to be connected
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H01L2224/78651 4 Belt conveyor
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H01L2224/78652 4 Chain conveyor
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H01L2224/78653 4 Vibrating conveyor
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H01L2224/78654 4 Pneumatic conveyor
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H01L2224/78655 4 in a fluid
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H01L2224/787 3 Means for aligning
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H01L2224/78701 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78702 4 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78703 4 Mechanical holding means
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H01L2224/78704 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78705 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78723 4 Electrostatic holding means
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H01L2224/78724 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78725 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78733 4 Magnetic holding means
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H01L2224/78734 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78735 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78743 4 Suction holding means
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H01L2224/78744 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78745 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/78753 4 Means for optical alignment, e.g. sensors
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H01L2224/78754 4 Guiding structures
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H01L2224/78755 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/78756 5 in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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H01L2224/788 3 Means for moving parts
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H01L2224/78801 4 Lower part of the bonding apparatus, e.g. XY table
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H01L2224/78802 5 Rotational mechanism
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H01L2224/78803 6 Pivoting mechanism
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H01L2224/78804 5 Translational mechanism
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H01L2224/78821 4 Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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H01L2224/78822 5 Rotational mechanism
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H01L2224/78823 6 Pivoting mechanism
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H01L2224/78824 5 Translational mechanism
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H01L2224/78841 4 of the pressing portion, e.g. tip or head
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H01L2224/78842 5 Rotational mechanism
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H01L2224/78843 6 Pivoting mechanism
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H01L2224/789 3 Means for monitoring the connection process
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H01L2224/78901 4 using a computer, e.g. fully- or semi-automatic bonding
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H01L2224/7892 4 Load or pressure adjusting means, e.g. sensors
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H01L2224/78925 4 Vibration adjusting means, e.g. sensors
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H01L2224/7895 3 Means for forming additional members
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H01L2224/7898 3 specially adapted for batch processes
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H01L2224/78981 3 Apparatus chuck
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H01L2224/78982 4 Shape
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H01L2224/78983 5 of the mounting surface
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H01L2224/78984 5 of other portions
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H01L2224/78985 4 Material
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H01L2224/78986 4 Auxiliary members on the pressing surface
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H01L2224/78987 5 Shape of the auxiliary member
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H01L2224/78988 5 Material of the auxiliary member
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H01L2224/79 2 Apparatus for Tape Automated Bonding [TAB]
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H01L2224/79001 3 Calibration means
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H01L2224/7901 3 Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
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H01L2224/791 3 Means for controlling the bonding environment, e.g. valves, vacuum pumps
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H01L2224/79101 4 Chamber
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H01L2224/79102 5 Vacuum chamber
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H01L2224/7911 5 High pressure chamber
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H01L2224/7915 3 Means for applying permanent coating
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H01L2224/79151 4 Means for direct writing
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H01L2224/79152 5 Syringe
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H01L2224/79153 6 integrated into the pressing head
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H01L2224/79155 5 Jetting means, e.g. ink jet
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H01L2224/79158 5 including a laser
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H01L2224/79161 4 Means for screen printing, e.g. roller, squeegee, screen stencil
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H01L2224/7917 4 Means for applying a preform, e.g. laminator
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H01L2224/79171 5 including a vacuum-bag
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H01L2224/7918 4 Means for blanket deposition
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H01L2224/79181 5 for spin coating, i.e. spin coater
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H01L2224/79182 5 for curtain coating
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H01L2224/79183 5 for immersion coating, i.e. bath
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H01L2224/79184 5 for spray coating, i.e. nozzle
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H01L2224/79185 5 Means for physical vapour deposition [PVD], e.g. evaporation, sputtering
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H01L2224/79186 5 Means for sputtering, e.g. target
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H01L2224/79187 5 Means for evaporation
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H01L2224/79188 5 Means for chemical vapour deposition [CVD], e.g. for laser CVD
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H01L2224/79189 5 Means for plating, e.g. for electroplating, electroless plating
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H01L2224/792 3 Protection means against electrical discharge
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H01L2224/7925 3 Means for applying energy, e.g. heating means
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H01L2224/79251 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79252 4 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79253 4 adapted for localised heating
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H01L2224/7926 4 Polychromatic heating lamp
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H01L2224/79261 4 Laser
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H01L2224/79262 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79263 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79264 4 by induction heating, i.e. coils
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H01L2224/79265 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79266 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79267 4 Flame torch, e.g. hydrogen torch
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H01L2224/79268 4 Discharge electrode
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H01L2224/79269 5 Shape of the discharge electrode
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H01L2224/7927 5 Material of the discharge electrode
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H01L2224/79271 5 Circuitry of the discharge electrode
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H01L2224/79272 4 Oven
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H01L2224/7928 4 Resistance welding electrodes, i.e. for ohmic heating
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H01L2224/79281 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79282 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79283 4 by infrared heating, e.g. infrared heating lamp
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H01L2224/793 4 by means of pressure
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H01L2224/79301 5 Pressing head
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H01L2224/79302 6 Shape
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H01L2224/79303 7 of the pressing surface
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H01L2224/79304 8 being curved
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H01L2224/79305 8 comprising protrusions
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H01L2224/7931 7 of other parts
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H01L2224/79312 6 Material
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H01L2224/79313 6 Removable pressing head
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H01L2224/79314 6 Auxiliary members on the pressing surface
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H01L2224/79315 7 Elastomer inlay
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H01L2224/79316 8 with retaining mechanisms
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H01L2224/79317 7 Removable auxiliary member
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H01L2224/79318 7 Shape of the auxiliary member
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H01L2224/7932 7 Material of the auxiliary member
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H01L2224/79343 5 by ultrasonic vibrations
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H01L2224/79344 6 Eccentric cams
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H01L2224/79345 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79346 7 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79347 6 Piezoelectric transducers
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H01L2224/79348 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79349 7 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/7935 6 Stable and mobile yokes
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H01L2224/79351 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79352 7 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79353 6 Ultrasonic horns
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H01L2224/79354 7 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79355 7 Design, e.g. of the wave guide
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H01L2224/795 3 Cooling means
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H01L2224/79501 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79502 4 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/7955 3 Mechanical means, e.g. for pressing, stamping
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H01L2224/796 3 Means for supplying the connector to be connected in the bonding apparatus
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H01L2224/79601 4 Storing means
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H01L2224/79611 4 Feeding means
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H01L2224/79621 4 Holding means
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H01L2224/7965 3 Means for transporting the components to be connected
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H01L2224/79651 4 Belt conveyor
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H01L2224/79652 4 Chain conveyor
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H01L2224/79653 4 Vibrating conveyor
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H01L2224/79654 4 Pneumatic conveyor
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H01L2224/79655 4 in a fluid
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H01L2224/797 3 Means for aligning
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H01L2224/79701 4 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79702 4 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79703 4 Mechanical holding means
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H01L2224/79704 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79705 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79723 4 Electrostatic holding means
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H01L2224/79724 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79725 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79733 4 Magnetic holding means
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H01L2224/79734 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79735 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79743 4 Suction holding means
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H01L2224/79744 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79745 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/79753 4 Means for optical alignment, e.g. sensors
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H01L2224/79754 4 Guiding structures
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H01L2224/79755 5 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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H01L2224/79756 5 in the upper part of the bonding apparatus, e.g. in the pressing head
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H01L2224/798 3 Means for moving parts
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H01L2224/79801 4 Lower part of the bonding apparatus, e.g. XY table
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H01L2224/79802 5 Rotational mechanism
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H01L2224/79803 6 Pivoting mechanism
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H01L2224/79804 5 Translational mechanism
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H01L2224/79821 4 Upper part of the bonding apparatus, i.e. pressing head
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H01L2224/79822 5 Rotational mechanism
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H01L2224/79823 6 Pivoting mechanism
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H01L2224/79824 5 Translational mechanism
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H01L2224/79841 4 of the pressing head
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H01L2224/79842 5 Rotational mechanism
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H01L2224/79843 6 Pivoting mechanism
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H01L2224/799 3 Means for monitoring the connection process
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H01L2224/79901 4 using a computer, e.g. fully- or semi-automatic bonding
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H01L2224/7992 4 Load or pressure adjusting means, e.g. sensors
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H01L2224/79925 4 Vibration adjusting means, e.g. sensors
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H01L2224/7995 3 Means for forming additional members
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H01L2224/7998 3 specially adapted for batch processes
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H01L2224/79981 3 Apparatus chuck
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H01L2224/79982 4 Shape
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H01L2224/79983 5 of the mounting surface
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H01L2224/79984 5 of other portions
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H01L2224/79985 4 Material
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H01L2224/79986 4 Auxiliary members on the pressing surface
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H01L2224/79987 5 Shape of the auxiliary member
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H01L2224/79988 5 Material of the auxiliary member
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H01L2224/7999 2 for disconnecting
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H01L2224/80 1 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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H01L2224/80001 2 by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
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H01L2224/80003 3 involving a temporary auxiliary member not forming part of the bonding apparatus
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H01L2224/80004 4 being a removable or sacrificial coating
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H01L2224/80006 4 being a temporary or sacrificial substrate
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H01L2224/80007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for protecting the bonding area during or after the bonding process
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H01L2224/80009 3 Pre-treatment of the bonding area
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H01L2224/8001 4 Cleaning the bonding area, e.g. oxide removal step, desmearing
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H01L2224/80011 5 Chemical cleaning, e.g. etching, flux
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H01L2224/80012 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/80013 5 Plasma cleaning
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H01L2224/80014 5 Thermal cleaning, e.g. decomposition, sublimation
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H01L2224/80019 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8001 - H01L2224/80014
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H01L2224/8002 4 Applying permanent coating to the bonding area in the bonding apparatus, e.g. in-situ coating
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H01L2224/80024 4 Applying flux to the bonding area in the bonding apparatus
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H01L2224/8003 4 Reshaping the bonding area in the bonding apparatus, e.g. flattening the bonding area
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H01L2224/80031 5 by chemical means, e.g. etching, anodisation
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H01L2224/80035 5 by heating means
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H01L2224/80037 6 using a polychromatic heating lamp
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H01L2224/80039 6 using a laser
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H01L2224/80041 6 Induction heating, i.e. eddy currents
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H01L2224/80047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/80048 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/80051 4 Forming additional members
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H01L2224/80052 3 Detaching bonding areas, e.g. after testing (unsoldering in general B23K1/018)
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H01L2224/80053 3 Bonding environment
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H01L2224/80054 4 Composition of the atmosphere
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H01L2224/80055 5 being oxidating
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H01L2224/80065 5 being reducing
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H01L2224/80075 5 being inert
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H01L2224/80085 4 being a liquid, e.g. for fluidic self-assembly
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H01L2224/8009 4 Vacuum
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H01L2224/80091 4 Under pressure
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H01L2224/80092 5 Atmospheric pressure
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H01L2224/80093 5 Transient conditions, e.g. gas-flow
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H01L2224/80095 4 Temperature settings
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H01L2224/80096 5 Transient conditions
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H01L2224/80097 6 Heating
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H01L2224/80098 6 Cooling
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H01L2224/80099 5 Ambient temperature
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H01L2224/8011 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8012 3 Aligning
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H01L2224/80121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/80122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/80123 6 Shape or position of the body
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H01L2224/80125 6 Bonding areas on the body
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H01L2224/80127 6 Bonding areas outside the body
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H01L2224/80129 6 Shape or position of the other item
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H01L2224/8013 5 using marks formed on the semiconductor or solid-state body
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H01L2224/80132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/80136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/80138 5 the guiding structures being at least partially left in the finished device
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H01L2224/80139 6 Guiding structures on the body
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H01L2224/8014 6 Guiding structures outside the body
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H01L2224/80141 6 Guiding structures both on and outside the body
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H01L2224/80143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/80148 4 involving movement of a part of the bonding apparatus
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H01L2224/80149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8015 6 Rotational movements
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H01L2224/8016 6 Translational movements
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H01L2224/80169 5 being the upper part of the bonding apparatus, i.e. bonding head
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H01L2224/8017 6 Rotational movements
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H01L2224/8018 6 Translational movements
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H01L2224/8019 3 Arrangement of the bonding areas prior to mounting
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H01L2224/80194 4 Lateral distribution of the bonding areas
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H01L2224/802 3 Applying energy for connecting
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H01L2224/80201 4 Compression bonding
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H01L2224/80203 5 Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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H01L2224/80204 6 with a graded temperature profile
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H01L2224/80205 5 Ultrasonic bonding
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H01L2224/80206 6 Direction of oscillation
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H01L2224/80207 6 Thermosonic bonding
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H01L2224/80209 5 applying unidirectional static pressure
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H01L2224/80211 5 applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid
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H01L2224/80213 4 using a reflow oven
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H01L2224/80215 5 with a graded temperature profile
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H01L2224/8022 4 with energy being in the form of electromagnetic radiation
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H01L2224/80222 5 Induction heating, i.e. eddy currents
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H01L2224/80224 5 using a laser
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H01L2224/8023 5 Polychromatic or infrared lamp heating
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H01L2224/80232 4 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/80234 4 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/80236 4 using electro-static corona discharge
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H01L2224/80237 4 using an electron beam (electron beam welding in general B23K15/00)
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H01L2224/80238 4 using electric resistance welding, i.e. ohmic heating
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H01L2224/8034 3 Bonding interfaces of the bonding area
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H01L2224/80345 4 Shape, e.g. interlocking features
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H01L2224/80355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/80357 4 being flush with the surface
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H01L2224/80359 4 Material
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H01L2224/8036 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/80365 4 Shape, e.g. interlocking features
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H01L2224/80375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/80379 4 Material (material of the bonding area prior to the connecting process H01L2224/05099 and H01L2224/05599)
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H01L2224/8038 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/80385 4 Shape, e.g. interlocking features
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H01L2224/80395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/80399 4 Material
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H01L2224/804 5 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/80401 6 the principal constituent melting at a temperature of less than 400°C
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H01L2224/80405 7 Gallium [Ga] as principal constituent
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H01L2224/80409 7 Indium [In] as principal constituent
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H01L2224/80411 7 Tin [Sn] as principal constituent
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H01L2224/80413 7 Bismuth [Bi] as principal constituent
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H01L2224/80414 7 Thallium [Tl] as principal constituent
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H01L2224/80416 7 Lead [Pb] as principal constituent
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H01L2224/80417 6 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/80418 7 Zinc [Zn] as principal constituent
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H01L2224/8042 7 Antimony [Sb] as principal constituent
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H01L2224/80423 7 Magnesium [Mg] as principal constituent
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H01L2224/80424 7 Aluminium [Al] as principal constituent
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H01L2224/80438 6 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/80439 7 Silver [Ag] as principal constituent
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H01L2224/80444 7 Gold [Au] as principal constituent
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H01L2224/80447 7 Copper [Cu] as principal constituent
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H01L2224/80449 7 Manganese [Mn] as principal constituent
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H01L2224/80455 7 Nickel [Ni] as principal constituent
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H01L2224/80457 7 Cobalt [Co] as principal constituent
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H01L2224/8046 7 Iron [Fe] as principal constituent
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H01L2224/80463 6 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/80464 7 Palladium [Pd] as principal constituent
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H01L2224/80466 7 Titanium [Ti] as principal constituent
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H01L2224/80469 7 Platinum [Pt] as principal constituent
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H01L2224/8047 7 Zirconium [Zr] as principal constituent
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H01L2224/80471 7 Chromium [Cr] as principal constituent
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H01L2224/80472 7 Vanadium [V] as principal constituent
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H01L2224/80473 7 Rhodium [Rh] as principal constituent
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H01L2224/80476 7 Ruthenium [Ru] as principal constituent
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H01L2224/80478 7 Iridium [Ir] as principal constituent
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H01L2224/80479 7 Niobium [Nb] as principal constituent
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H01L2224/8048 7 Molybdenum [Mo] as principal constituent
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H01L2224/80481 7 Tantalum [Ta] as principal constituent
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H01L2224/80483 7 Rhenium [Re] as principal constituent
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H01L2224/80484 7 Tungsten [W] as principal constituent
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H01L2224/80486 5 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/80487 6 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/80488)
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H01L2224/80488 6 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8049 5 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/80491 6 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/80493 5 with a principal constituent of the material being a solid not provided for in groups H01L2224/804 - H01L2224/80491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/80494 5 with a principal constituent of the material being a liquid not provided for in groups H01L2224/804 - H01L2224/80491
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H01L2224/80495 5 with a principal constituent of the material being a gas not provided for in groups H01L2224/804 - H01L2224/80491
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H01L2224/80498 5 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/80499 6 Material of the matrix
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H01L2224/805 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/80501 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/80505 9 Gallium [Ga] as principal constituent
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H01L2224/80509 9 Indium [In] as principal constituent
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H01L2224/80511 9 Tin [Sn] as principal constituent
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H01L2224/80513 9 Bismuth [Bi] as principal constituent
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H01L2224/80514 9 Thallium [Tl] as principal constituent
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H01L2224/80516 9 Lead [Pb] as principal constituent
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H01L2224/80517 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/80518 9 Zinc [Zn] as principal constituent
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H01L2224/8052 9 Antimony [Sb] as principal constituent
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H01L2224/80523 9 Magnesium [Mg] as principal constituent
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H01L2224/80524 9 Aluminium [Al] as principal constituent
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H01L2224/80538 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/80539 9 Silver [Ag] as principal constituent
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H01L2224/80544 9 Gold [Au] as principal constituent
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H01L2224/80547 9 Copper [Cu] as principal constituent
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H01L2224/80549 9 Manganese [Mn] as principal constituent
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H01L2224/80555 9 Nickel [Ni] as principal constituent
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H01L2224/80557 9 Cobalt [Co] as principal constituent
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H01L2224/8056 9 Iron [Fe] as principal constituent
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H01L2224/80563 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/80564 9 Palladium [Pd] as principal constituent
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H01L2224/80566 9 Titanium [Ti] as principal constituent
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H01L2224/80569 9 Platinum [Pt] as principal constituent
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H01L2224/8057 9 Zirconium [Zr] as principal constituent
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H01L2224/80571 9 Chromium [Cr] as principal constituent
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H01L2224/80572 9 Vanadium [V] as principal constituent
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H01L2224/80573 9 Rhodium [Rh] as principal constituent
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H01L2224/80576 9 Ruthenium [Ru] as principal constituent
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H01L2224/80578 9 Iridium [Ir] as principal constituent
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H01L2224/80579 9 Niobium [Nb] as principal constituent
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H01L2224/8058 9 Molybdenum [Mo] as principal constituent
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H01L2224/80581 9 Tantalum [Ta] as principal constituent
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H01L2224/80583 9 Rhenium [Re] as principal constituent
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H01L2224/80584 9 Tungsten [W] as principal constituent
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H01L2224/80586 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/80587 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/80588)
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H01L2224/80588 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8059 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/80591 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/80593 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/805 - H01L2224/80591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/80594 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/805 - H01L2224/80591
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H01L2224/80595 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/805 - H01L2224/80591
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H01L2224/80598 6 Fillers
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H01L2224/80599 7 Base material
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H01L2224/806 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/80601 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/80605 10 Gallium [Ga] as principal constituent
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H01L2224/80609 10 Indium [In] as principal constituent
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H01L2224/80611 10 Tin [Sn] as principal constituent
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H01L2224/80613 10 Bismuth [Bi] as principal constituent
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H01L2224/80614 10 Thallium [Tl] as principal constituent
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H01L2224/80616 10 Lead [Pb] as principal constituent
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H01L2224/80617 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/80618 10 Zinc [Zn] as principal constituent
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H01L2224/8062 10 Antimony [Sb] as principal constituent
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H01L2224/80623 10 Magnesium [Mg] as principal constituent
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H01L2224/80624 10 Aluminium [Al] as principal constituent
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H01L2224/80638 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/80639 10 Silver [Ag] as principal constituent
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H01L2224/80644 10 Gold [Au] as principal constituent
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H01L2224/80647 10 Copper [Cu] as principal constituent
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H01L2224/80649 10 Manganese [Mn] as principal constituent
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H01L2224/80655 10 Nickel [Ni] as principal constituent
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H01L2224/80657 10 Cobalt [Co] as principal constituent
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H01L2224/8066 10 Iron [Fe] as principal constituent
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H01L2224/80663 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/80664 10 Palladium [Pd] as principal constituent
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H01L2224/80666 10 Titanium [Ti] as principal constituent
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H01L2224/80669 10 Platinum [Pt] as principal constituent
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H01L2224/8067 10 Zirconium [Zr] as principal constituent
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H01L2224/80671 10 Chromium [Cr] as principal constituent
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H01L2224/80672 10 Vanadium [V] as principal constituent
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H01L2224/80673 10 Rhodium [Rh] as principal constituent
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H01L2224/80676 10 Ruthenium [Ru] as principal constituent
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H01L2224/80678 10 Iridium [Ir] as principal constituent
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H01L2224/80679 10 Niobium [Nb] as principal constituent
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H01L2224/8068 10 Molybdenum [Mo] as principal constituent
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H01L2224/80681 10 Tantalum [Ta] as principal constituent
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H01L2224/80683 10 Rhenium [Re] as principal constituent
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H01L2224/80684 10 Tungsten [W] as principal constituent
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H01L2224/80686 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/80687 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/80688)
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H01L2224/80688 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8069 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/80691 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/80693 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/806 - H01L2224/80691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/80694 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/806 - H01L2224/80691
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H01L2224/80695 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/806 - H01L2224/80691
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H01L2224/80698 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/80699 7 Coating material
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H01L2224/807 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/80701 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/80705 10 Gallium [Ga] as principal constituent
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H01L2224/80709 10 Indium [In] as principal constituent
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H01L2224/80711 10 Tin [Sn] as principal constituent
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H01L2224/80713 10 Bismuth [Bi] as principal constituent
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H01L2224/80714 10 Thallium [Tl] as principal constituent
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H01L2224/80716 10 Lead [Pb] as principal constituent
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H01L2224/80717 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/80718 10 Zinc [Zn] as principal constituent
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H01L2224/8072 10 Antimony [Sb] as principal constituent
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H01L2224/80723 10 Magnesium [Mg] as principal constituent
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H01L2224/80724 10 Aluminium [Al] as principal constituent
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H01L2224/80738 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/80739 10 Silver [Ag] as principal constituent
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H01L2224/80744 10 Gold [Au] as principal constituent
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H01L2224/80747 10 Copper [Cu] as principal constituent
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H01L2224/80749 10 Manganese [Mn] as principal constituent
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H01L2224/80755 10 Nickel [Ni] as principal constituent
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H01L2224/80757 10 Cobalt [Co] as principal constituent
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H01L2224/8076 10 Iron [Fe] as principal constituent
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H01L2224/80763 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/80764 10 Palladium [Pd] as principal constituent
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H01L2224/80766 10 Titanium [Ti] as principal constituent
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H01L2224/80769 10 Platinum [Pt] as principal constituent
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H01L2224/8077 10 Zirconium [Zr] as principal constituent
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H01L2224/80771 10 Chromium [Cr] as principal constituent
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H01L2224/80772 10 Vanadium [V] as principal constituent
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H01L2224/80773 10 Rhodium [Rh] as principal constituent
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H01L2224/80776 10 Ruthenium [Ru] as principal constituent
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H01L2224/80778 10 Iridium [Ir] as principal constituent
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H01L2224/80779 10 Niobium [Nb] as principal constituent
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H01L2224/8078 10 Molybdenum [Mo] as principal constituent
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H01L2224/80781 10 Tantalum [Ta] as principal constituent
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H01L2224/80783 10 Rhenium [Re] as principal constituent
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H01L2224/80784 10 Tungsten [W] as principal constituent
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H01L2224/80786 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/80787 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/80788)
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H01L2224/80788 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8079 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/80791 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/80793 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/807 - H01L2224/80791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/80794 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/807 - H01L2224/80791
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H01L2224/80795 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/807 - H01L2224/80791
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H01L2224/80798 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/80799 7 Shape or distribution of the fillers
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H01L2224/808 3 Bonding techniques
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H01L2224/80801 4 Soldering or alloying
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H01L2224/80805 5 involving forming a eutectic alloy at the bonding interface
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H01L2224/8081 5 involving forming an intermetallic compound at the bonding interface
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H01L2224/80815 5 Reflow soldering
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H01L2224/8082 5 Diffusion bonding
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H01L2224/80825 6 Solid-liquid interdiffusion
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H01L2224/8083 6 Solid-solid interdiffusion
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H01L2224/8084 4 Sintering
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H01L2224/8085 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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H01L2224/80855 5 Hardening the adhesive by curing, i.e. thermosetting
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H01L2224/80856 6 Pre-cured adhesive, i.e. B-stage adhesive
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H01L2224/80859 6 Localised curing of parts of the bonding area
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H01L2224/80862 6 Heat curing
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H01L2224/80865 6 Microwave curing
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H01L2224/80868 6 Infrared [IR] curing
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H01L2224/80871 6 Visible light curing
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H01L2224/80874 6 Ultraviolet [UV] curing
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H01L2224/80877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8088 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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H01L2224/80885 5 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/80855 - H01L2224/8088, e.g. for hybrid thermoplastic-thermosetting adhesives
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H01L2224/8089 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
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H01L2224/80893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
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H01L2224/80894 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/80895 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/80896 5 between electrically insulating surfaces, e.g. oxide or nitride layers
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H01L2224/80897 4 Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like
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H01L2224/80898 5 Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
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H01L2224/80899 6 using resilient parts in the bonding area
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H01L2224/809 3 with the bonding area not providing any mechanical bonding
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H01L2224/80901 4 Pressing a bonding area against another bonding area by means of a further bonding area or connector (detachable pressure contact H01L2224/72)
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H01L2224/80902 5 by means of a further bonding area
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H01L2224/80903 5 by means of a bump or layer connector
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H01L2224/80904 5 by means of an encapsulation layer or foil
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H01L2224/80905 3 Combinations of bonding methods provided for in at least two different groups from H01L2224/808 - H01L2224/80904
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H01L2224/80906 4 Specific sequence of method steps
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H01L2224/80907 4 Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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H01L2224/80908 3 involving monitoring, e.g. feedback loop
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H01L2224/80909 3 Post-treatment of the bonding area
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H01L2224/8091 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/80911 5 Chemical cleaning, e.g. etching, flux
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H01L2224/80912 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/80913 5 Plasma cleaning
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H01L2224/80914 5 Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge
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H01L2224/80919 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8091 - H01L2224/80914
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H01L2224/8092 4 Applying permanent coating, e.g. protective coating
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H01L2224/8093 4 Reshaping
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H01L2224/80931 5 by chemical means, e.g. etching
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H01L2224/80935 5 by heating means, e.g. reflowing
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H01L2224/80937 6 using a polychromatic heating lamp
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H01L2224/80939 6 using a laser
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H01L2224/80941 6 Induction heating, i.e. eddy currents
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H01L2224/80943 6 using a flame torch, e.g. hydrogen torch
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H01L2224/80945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/80947 5 by mechanical means, e.g. pull-and-cut, pressing, stamping
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H01L2224/80948 4 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/80951 4 Forming additional members, e.g. for reinforcing
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H01L2224/80986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/81 2 using a bump connector
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H01L2224/81001 3 involving a temporary auxiliary member not forming part of the bonding apparatus
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H01L2224/81002 4 being a removable or sacrificial coating
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H01L2224/81005 4 being a temporary or sacrificial substrate
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H01L2224/81007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process
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H01L2224/81009 3 Pre-treatment of the bump connector or the bonding area
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H01L2224/8101 4 Cleaning the bump connector, e.g. oxide removal step, desmearing
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H01L2224/81011 5 Chemical cleaning, e.g. etching, flux
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H01L2224/81012 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/81013 5 Plasma cleaning
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H01L2224/81014 5 Thermal cleaning, e.g. decomposition, sublimation
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H01L2224/81019 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8101 - H01L2224/81014
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H01L2224/8102 4 Applying permanent coating to the bump connector in the bonding apparatus, e.g. in-situ coating
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H01L2224/81022 4 Cleaning the bonding area, e.g. oxide removal step, desmearing
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H01L2224/81024 4 Applying flux to the bonding area
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H01L2224/81026 4 Applying a precursor material to the bonding area
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H01L2224/8103 4 Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector
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H01L2224/81031 5 by chemical means, e.g. etching, anodisation
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H01L2224/81035 5 by heating means
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H01L2224/81037 6 using a polychromatic heating lamp
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H01L2224/81039 6 using a laser
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H01L2224/81041 6 Induction heating, i.e. eddy currents
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H01L2224/81047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/81048 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/81051 4 Forming additional members
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H01L2224/81052 3 Detaching bump connectors, e.g. after testing (unsoldering in general B23K1/018)
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H01L2224/81053 3 Bonding environment
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H01L2224/81054 4 Composition of the atmosphere
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H01L2224/81055 5 being oxidating
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H01L2224/81065 5 being reducing
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H01L2224/81075 5 being inert
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H01L2224/81085 4 being a liquid, e.g. for fluidic self-assembly
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H01L2224/8109 4 Vacuum
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H01L2224/81091 4 Under pressure
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H01L2224/81092 5 Atmospheric pressure
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H01L2224/81093 5 Transient conditions, e.g. gas-flow
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H01L2224/81095 4 Temperature settings
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H01L2224/81096 5 Transient conditions
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H01L2224/81097 6 Heating
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H01L2224/81098 6 Cooling
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H01L2224/81099 5 Ambient temperature
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H01L2224/811 3 the bump connector being supplied to the parts to be connected in the bonding apparatus
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H01L2224/81101 4 as prepeg comprising a bump connector, e.g. provided in an insulating plate member
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H01L2224/8111 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8112 3 Aligning
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H01L2224/81121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/81122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/81123 6 Shape or position of the body
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H01L2224/81125 6 Bonding areas on the body
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H01L2224/81127 6 Bonding areas outside the body
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H01L2224/81129 6 Shape or position of the other item
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H01L2224/8113 5 using marks formed on the semiconductor or solid-state body
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H01L2224/81132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/81136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/81138 5 the guiding structures being at least partially left in the finished device
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H01L2224/81139 6 Guiding structures on the body
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H01L2224/8114 6 Guiding structures outside the body
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H01L2224/81141 6 Guiding structures both on and outside the body
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H01L2224/81143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/81148 4 involving movement of a part of the bonding apparatus
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H01L2224/81149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8115 6 Rotational movements
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H01L2224/8116 6 Translational movements
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H01L2224/81169 5 being the upper part of the bonding apparatus, i.e. bonding head
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H01L2224/8117 6 Rotational movements
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H01L2224/8118 6 Translational movements
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H01L2224/8119 3 Arrangement of the bump connectors prior to mounting
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H01L2224/81191 4 wherein the bump connectors are disposed only on the semiconductor or solid-state body
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H01L2224/81192 4 wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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H01L2224/81193 4 wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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H01L2224/81194 4 Lateral distribution of the bump connectors
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H01L2224/812 3 Applying energy for connecting
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H01L2224/81201 4 Compression bonding
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H01L2224/81203 5 Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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H01L2224/81204 6 with a graded temperature profile
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H01L2224/81205 5 Ultrasonic bonding
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H01L2224/81206 6 Direction of oscillation
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H01L2224/81207 6 Thermosonic bonding
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H01L2224/81208 5 applying unidirectional static pressure
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H01L2224/81209 5 applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid
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H01L2224/8121 4 using a reflow oven
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H01L2224/81211 5 with a graded temperature profile
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H01L2224/8122 4 with energy being in the form of electromagnetic radiation
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H01L2224/81222 5 Induction heating, i.e. eddy currents
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H01L2224/81224 5 using a laser
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H01L2224/8123 5 Polychromatic or infrared lamp heating
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H01L2224/81232 4 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/81234 4 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/81236 4 using electro-static corona discharge
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H01L2224/81237 4 using an electron beam (electron beam welding in general B23K15/00)
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H01L2224/81238 4 using electric resistance welding, i.e. ohmic heating
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H01L2224/8134 3 Bonding interfaces of the bump connector
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H01L2224/81345 4 Shape, e.g. interlocking features
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H01L2224/81355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/81359 4 Material
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H01L2224/8136 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/81365 4 Shape, e.g. interlocking features
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H01L2224/81375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/81379 4 Material (material of the bump connector prior to the connecting process H01L2224/13099 and H01L2224/13599, and subgroups)
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H01L2224/8138 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/81385 4 Shape, e.g. interlocking features
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H01L2224/81395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/81399 4 Material
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H01L2224/814 5 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/81401 6 the principal constituent melting at a temperature of less than 400°C
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H01L2224/81405 7 Gallium [Ga] as principal constituent
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H01L2224/81409 7 Indium [In] as principal constituent
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H01L2224/81411 7 Tin [Sn] as principal constituent
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H01L2224/81413 7 Bismuth [Bi] as principal constituent
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H01L2224/81414 7 Thallium [Tl] as principal constituent
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H01L2224/81416 7 Lead [Pb] as principal constituent
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H01L2224/81417 6 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/81418 7 Zinc [Zn] as principal constituent
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H01L2224/8142 7 Antimony [Sb] as principal constituent
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H01L2224/81423 7 Magnesium [Mg] as principal constituent
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H01L2224/81424 7 Aluminium [Al] as principal constituent
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H01L2224/81438 6 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/81439 7 Silver [Ag] as principal constituent
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H01L2224/81444 7 Gold [Au] as principal constituent
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H01L2224/81447 7 Copper [Cu] as principal constituent
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H01L2224/81449 7 Manganese [Mn] as principal constituent
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H01L2224/81455 7 Nickel [Ni] as principal constituent
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H01L2224/81457 7 Cobalt [Co] as principal constituent
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H01L2224/8146 7 Iron [Fe] as principal constituent
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H01L2224/81463 6 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/81464 7 Palladium [Pd] as principal constituent
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H01L2224/81466 7 Titanium [Ti] as principal constituent
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H01L2224/81469 7 Platinum [Pt] as principal constituent
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H01L2224/8147 7 Zirconium [Zr] as principal constituent
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H01L2224/81471 7 Chromium [Cr] as principal constituent
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H01L2224/81472 7 Vanadium [V] as principal constituent
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H01L2224/81473 7 Rhodium [Rh] as principal constituent
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H01L2224/81476 7 Ruthenium [Ru] as principal constituent
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H01L2224/81478 7 Iridium [Ir] as principal constituent
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H01L2224/81479 7 Niobium [Nb] as principal constituent
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H01L2224/8148 7 Molybdenum [Mo] as principal constituent
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H01L2224/81481 7 Tantalum [Ta] as principal constituent
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H01L2224/81483 7 Rhenium [Re] as principal constituent
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H01L2224/81484 7 Tungsten [W] as principal constituent
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H01L2224/81486 5 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/81487 6 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/81488)
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H01L2224/81488 6 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8149 5 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/81491 6 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/81493 5 with a principal constituent of the material being a solid not provided for in groups H01L2224/814 - H01L2224/81491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/81494 5 with a principal constituent of the material being a liquid not provided for in groups H01L2224/814 - H01L2224/81491
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H01L2224/81495 5 with a principal constituent of the material being a gas not provided for in groups H01L2224/814 - H01L2224/81491
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H01L2224/81498 5 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/81499 6 Material of the matrix
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H01L2224/815 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/81501 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/81505 9 Gallium [Ga] as principal constituent
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H01L2224/81509 9 Indium [In] as principal constituent
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H01L2224/81511 9 Tin [Sn] as principal constituent
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H01L2224/81513 9 Bismuth [Bi] as principal constituent
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H01L2224/81514 9 Thallium [Tl] as principal constituent
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H01L2224/81516 9 Lead [Pb] as principal constituent
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H01L2224/81517 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/81518 9 Zinc [Zn] as principal constituent
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H01L2224/8152 9 Antimony [Sb] as principal constituent
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H01L2224/81523 9 Magnesium [Mg] as principal constituent
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H01L2224/81524 9 Aluminium [Al] as principal constituent
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H01L2224/81538 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/81539 9 Silver [Ag] as principal constituent
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H01L2224/81544 9 Gold [Au] as principal constituent
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H01L2224/81547 9 Copper [Cu] as principal constituent
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H01L2224/81549 9 Manganese [Mn] as principal constituent
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H01L2224/81555 9 Nickel [Ni] as principal constituent
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H01L2224/81557 9 Cobalt [Co] as principal constituent
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H01L2224/8156 9 Iron [Fe] as principal constituent
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H01L2224/81563 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/81564 9 Palladium [Pd] as principal constituent
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H01L2224/81566 9 Titanium [Ti] as principal constituent
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H01L2224/81569 9 Platinum [Pt] as principal constituent
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H01L2224/8157 9 Zirconium [Zr] as principal constituent
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H01L2224/81571 9 Chromium [Cr] as principal constituent
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H01L2224/81572 9 Vanadium [V] as principal constituent
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H01L2224/81573 9 Rhodium [Rh] as principal constituent
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H01L2224/81576 9 Ruthenium [Ru] as principal constituent
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H01L2224/81578 9 Iridium [Ir] as principal constituent
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H01L2224/81579 9 Niobium [Nb] as principal constituent
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H01L2224/8158 9 Molybdenum [Mo] as principal constituent
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H01L2224/81581 9 Tantalum [Ta] as principal constituent
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H01L2224/81583 9 Rhenium [Re] as principal constituent
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H01L2224/81584 9 Tungsten [W] as principal constituent
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H01L2224/81586 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/81587 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/81588)
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H01L2224/81588 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8159 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/81591 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/81593 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/815 - H01L2224/81591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/81594 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/815 - H01L2224/81591
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H01L2224/81595 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/815 - H01L2224/81591
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H01L2224/81598 6 Fillers
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H01L2224/81599 7 Base material
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H01L2224/816 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/81601 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/81605 10 Gallium [Ga] as principal constituent
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H01L2224/81609 10 Indium [In] as principal constituent
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H01L2224/81611 10 Tin [Sn] as principal constituent
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H01L2224/81613 10 Bismuth [Bi] as principal constituent
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H01L2224/81614 10 Thallium [Tl] as principal constituent
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H01L2224/81616 10 Lead [Pb] as principal constituent
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H01L2224/81617 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/81618 10 Zinc [Zn] as principal constituent
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H01L2224/8162 10 Antimony [Sb] as principal constituent
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H01L2224/81623 10 Magnesium [Mg] as principal constituent
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H01L2224/81624 10 Aluminium [Al] as principal constituent
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H01L2224/81638 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/81639 10 Silver [Ag] as principal constituent
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H01L2224/81644 10 Gold [Au] as principal constituent
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H01L2224/81647 10 Copper [Cu] as principal constituent
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H01L2224/81649 10 Manganese [Mn] as principal constituent
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H01L2224/81655 10 Nickel [Ni] as principal constituent
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H01L2224/81657 10 Cobalt [Co] as principal constituent
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H01L2224/8166 10 Iron [Fe] as principal constituent
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H01L2224/81663 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/81664 10 Palladium [Pd] as principal constituent
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H01L2224/81666 10 Titanium [Ti] as principal constituent
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H01L2224/81669 10 Platinum [Pt] as principal constituent
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H01L2224/8167 10 Zirconium [Zr] as principal constituent
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H01L2224/81671 10 Chromium [Cr] as principal constituent
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H01L2224/81672 10 Vanadium [V] as principal constituent
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H01L2224/81673 10 Rhodium [Rh] as principal constituent
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H01L2224/81676 10 Ruthenium [Ru] as principal constituent
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H01L2224/81678 10 Iridium [Ir] as principal constituent
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H01L2224/81679 10 Niobium [Nb] as principal constituent
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H01L2224/8168 10 Molybdenum [Mo] as principal constituent
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H01L2224/81681 10 Tantalum [Ta] as principal constituent
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H01L2224/81683 10 Rhenium [Re] as principal constituent
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H01L2224/81684 10 Tungsten [W] as principal constituent
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H01L2224/81686 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/81687 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/81688)
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H01L2224/81688 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8169 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/81691 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/81693 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/816 - H01L2224/81691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/81694 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/816 - H01L2224/81691
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H01L2224/81695 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/816 - H01L2224/81691
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H01L2224/81698 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/81699 7 Coating material
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H01L2224/817 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/81701 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/81705 10 Gallium [Ga] as principal constituent
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H01L2224/81709 10 Indium [In] as principal constituent
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H01L2224/81711 10 Tin [Sn] as principal constituent
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H01L2224/81713 10 Bismuth [Bi] as principal constituent
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H01L2224/81714 10 Thallium [Tl] as principal constituent
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H01L2224/81716 10 Lead [Pb] as principal constituent
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H01L2224/81717 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/81718 10 Zinc [Zn] as principal constituent
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H01L2224/8172 10 Antimony [Sb] as principal constituent
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H01L2224/81723 10 Magnesium [Mg] as principal constituent
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H01L2224/81724 10 Aluminium [Al] as principal constituent
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H01L2224/81738 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/81739 10 Silver [Ag] as principal constituent
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H01L2224/81744 10 Gold [Au] as principal constituent
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H01L2224/81747 10 Copper [Cu] as principal constituent
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H01L2224/81749 10 Manganese [Mn] as principal constituent
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H01L2224/81755 10 Nickel [Ni] as principal constituent
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H01L2224/81757 10 Cobalt [Co] as principal constituent
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H01L2224/8176 10 Iron [Fe] as principal constituent
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H01L2224/81763 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/81764 10 Palladium [Pd] as principal constituent
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H01L2224/81766 10 Titanium [Ti] as principal constituent
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H01L2224/81769 10 Platinum [Pt] as principal constituent
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H01L2224/8177 10 Zirconium [Zr] as principal constituent
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H01L2224/81771 10 Chromium [Cr] as principal constituent
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H01L2224/81772 10 Vanadium [V] as principal constituent
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H01L2224/81773 10 Rhodium [Rh] as principal constituent
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H01L2224/81776 10 Ruthenium [Ru] as principal constituent
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H01L2224/81778 10 Iridium [Ir] as principal constituent
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H01L2224/81779 10 Niobium [Nb] as principal constituent
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H01L2224/8178 10 Molybdenum [Mo] as principal constituent
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H01L2224/81781 10 Tantalum [Ta] as principal constituent
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H01L2224/81783 10 Rhenium [Re] as principal constituent
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H01L2224/81784 10 Tungsten [W] as principal constituent
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H01L2224/81786 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/81787 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/81788)
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H01L2224/81788 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8179 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/81791 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/81793 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/817 - H01L2224/81791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/81794 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/817 - H01L2224/81791
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H01L2224/81795 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/817 - H01L2224/81791
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H01L2224/81798 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/81799 7 Shape or distribution of the fillers
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H01L2224/818 3 Bonding techniques
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H01L2224/81801 4 Soldering or alloying
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H01L2224/81805 5 involving forming a eutectic alloy at the bonding interface
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H01L2224/8181 5 involving forming an intermetallic compound at the bonding interface
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H01L2224/81815 5 Reflow soldering
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H01L2224/8182 5 Diffusion bonding
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H01L2224/81825 6 Solid-liquid interdiffusion
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H01L2224/8183 6 Solid-solid interdiffusion
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H01L2224/8184 4 Sintering
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H01L2224/8185 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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H01L2224/81855 5 Hardening the adhesive by curing, i.e. thermosetting
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H01L2224/81856 6 Pre-cured adhesive, i.e. B-stage adhesive
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H01L2224/81859 6 Localised curing of parts of the bump connector
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H01L2224/81862 6 Heat curing
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H01L2224/81865 6 Microwave curing
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H01L2224/81868 6 Infrared [IR] curing
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H01L2224/81871 6 Visible light curing
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H01L2224/81874 6 Ultraviolet [UV] curing
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H01L2224/81877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8188 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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H01L2224/81885 5 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/81855 - H01L2224/8188, e.g. for hybrid thermoplastic-thermosetting adhesives
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H01L2224/8189 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
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H01L2224/81893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
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H01L2224/81894 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/81895 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/81896 5 between electrically insulating surfaces, e.g. oxide or nitride layers
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H01L2224/81897 4 Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like
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H01L2224/81898 5 Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
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H01L2224/81899 6 using resilient parts in the bump connector or in the bonding area
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H01L2224/819 3 with the bump connector not providing any mechanical bonding
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H01L2224/81901 4 Pressing the bump connector against the bonding areas by means of another connector (detachable pressure contact H01L2224/72)
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H01L2224/81902 5 by means of another bump connector
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H01L2224/81903 5 by means of a layer connector
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H01L2224/81904 5 by means of an encapsulation layer or foil
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H01L2224/81905 3 Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
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H01L2224/81906 4 Specific sequence of method steps
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H01L2224/81907 4 Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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H01L2224/81908 3 involving monitoring, e.g. feedback loop
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H01L2224/81909 3 Post-treatment of the bump connector or bonding area
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H01L2224/8191 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/81911 5 Chemical cleaning, e.g. etching, flux
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H01L2224/81912 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/81913 5 Plasma cleaning
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H01L2224/81914 5 Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge
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H01L2224/81919 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8191 - H01L2224/81914
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H01L2224/8192 4 Applying permanent coating, e.g. protective coating
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H01L2224/8193 4 Reshaping
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H01L2224/81931 5 by chemical means, e.g. etching
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H01L2224/81935 5 by heating means, e.g. reflowing
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H01L2224/81937 6 using a polychromatic heating lamp
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H01L2224/81939 6 using a laser
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H01L2224/81941 6 Induction heating, i.e. eddy currents
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H01L2224/81943 6 using a flame torch, e.g. hydrogen torch
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H01L2224/81945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/81947 5 by mechanical means, e.g. "pull-and-cut", pressing, stamping
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H01L2224/81948 4 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/81951 4 Forming additional members, e.g. for reinforcing
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H01L2224/81986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/82 2 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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H01L2224/82001 3 involving a temporary auxiliary member not forming part of the bonding apparatus
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H01L2224/82002 4 being a removable or sacrificial coating
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H01L2224/82005 4 being a temporary or sacrificial substrate
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H01L2224/82007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
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H01L2224/82009 3 Pre-treatment of the connector or the bonding area
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H01L2224/8201 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/8203 4 Reshaping, e.g. forming vias
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H01L2224/82031 5 by chemical means, e.g. etching, anodisation
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H01L2224/82035 5 by heating means
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H01L2224/82039 6 using a laser
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H01L2224/82045 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/82047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/82048 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/82051 4 Forming additional members
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H01L2224/82053 3 Bonding environment
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H01L2224/82054 4 Composition of the atmosphere
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H01L2224/82085 4 being a liquid, e.g. for fluidic self-assembly
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H01L2224/8209 4 Vacuum
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H01L2224/82091 4 Under pressure
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H01L2224/82095 4 Temperature settings
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H01L2224/82096 5 Transient conditions
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H01L2224/82097 6 Heating
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H01L2224/82098 6 Cooling
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H01L2224/82099 5 Ambient temperature
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H01L2224/821 3 Forming a build-up interconnect
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H01L2224/82101 4 by additive methods, e.g. direct writing
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H01L2224/82102 5 using jetting, e.g. ink jet
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H01L2224/82103 5 using laser direct writing
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H01L2224/82104 5 using screen printing
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H01L2224/82105 5 by using a preform
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H01L2224/82106 4 by subtractive methods
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H01L2224/82108 4 by self-assembly processes
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H01L2224/8211 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8212 3 Aligning
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H01L2224/82121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/82122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/8213 5 using marks formed on the semiconductor or solid-state body
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H01L2224/82132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/82136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/82138 5 the guiding structures being at least partially left in the finished device
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H01L2224/82143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/82148 4 involving movement of a part of the bonding apparatus
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H01L2224/82149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8215 6 Rotational movements
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H01L2224/8216 6 Translational movements
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H01L2224/82169 5 being the upper part of the bonding apparatus, e.g. nozzle
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H01L2224/8217 6 Rotational movement
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H01L2224/8218 6 Translational movements
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H01L2224/82181 7 connecting first on the semiconductor or solid-state body, i.e. on-chip,
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H01L2224/82186 7 connecting first outside the semiconductor or solid-state body, i.e. off-chip
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H01L2224/82191 7 connecting first both on and outside the semiconductor or solid-state body
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H01L2224/822 3 Applying energy for connecting
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H01L2224/82201 4 Compression bonding
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H01L2224/82203 5 Thermocompression bonding
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H01L2224/82205 5 Ultrasonic bonding
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H01L2224/82207 6 Thermosonic bonding
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H01L2224/8221 4 with energy being in the form of electromagnetic radiation
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H01L2224/82212 5 Induction heating, i.e. eddy currents
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H01L2224/82214 5 using a laser
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H01L2224/8223 5 Polychromatic or infrared lamp heating
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H01L2224/82232 4 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/82234 4 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/82236 4 using electro-static corona discharge
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H01L2224/82237 4 using electron beam, (electron beam in general B23K15/00)
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H01L2224/82238 4 using electric resistance welding, i.e. ohmic heating
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H01L2224/8234 3 Bonding interfaces of the connector
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H01L2224/82345 4 Shape, e.g. interlocking features
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H01L2224/82355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/82359 4 Material
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H01L2224/8236 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/82365 4 Shape, e.g. interlocking features
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H01L2224/82375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/82379 4 Material
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H01L2224/8238 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/82385 4 Shape, e.g. interlocking features
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H01L2224/82395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/82399 4 Material
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H01L2224/828 3 Bonding techniques
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H01L2224/82801 4 Soldering or alloying
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H01L2224/82805 5 involving forming a eutectic alloy at the bonding interface
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H01L2224/8281 5 involving forming an intermetallic compound at the bonding interface
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H01L2224/82815 5 Reflow soldering
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H01L2224/8282 5 Diffusion bonding
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H01L2224/82825 6 Solid-liquid interdiffusion
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H01L2224/8283 6 Solid-solid interdiffusion
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H01L2224/8284 4 Sintering
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H01L2224/8285 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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H01L2224/82855 5 Hardening the adhesive by curing, i.e. thermosetting
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H01L2224/82856 6 Pre-cured adhesive, i.e. B-stage adhesive
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H01L2224/82859 6 Localised curing of parts of the connector
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H01L2224/82862 6 Heat curing
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H01L2224/82865 6 Microwave curing
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H01L2224/82868 6 Infrared [IR] curing
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H01L2224/82871 6 Visible light curing
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H01L2224/82874 6 Ultraviolet [UV] curing
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H01L2224/82877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8288 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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H01L2224/82885 5 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/82855 - H01L2224/8288, e.g. for hybrid thermoplastic-thermosetting adhesives
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H01L2224/8289 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
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H01L2224/82893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
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H01L2224/82895 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/82896 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/82897 5 between electrically insulating surfaces, e.g. oxide or nitride layers
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H01L2224/82899 4 Combinations of bonding methods provided for in at least two different groups from H01L2224/828 - H01L2224/82897
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H01L2224/829 3 involving monitoring, e.g. feedback loop
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H01L2224/82909 3 Post-treatment of the connector or the bonding area
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H01L2224/8291 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/8293 4 Reshaping
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H01L2224/82931 5 by chemical means, e.g. etching, anodisation
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H01L2224/82935 5 by heating means
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H01L2224/82939 6 using a laser
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H01L2224/82945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/82947 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/82948 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/82951 4 Forming additional members
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H01L2224/82986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/83 2 using a layer connector
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H01L2224/83001 3 involving a temporary auxiliary member not forming part of the bonding apparatus
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H01L2224/83002 4 being a removable or sacrificial coating
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H01L2224/83005 4 being a temporary or sacrificial substrate
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H01L2224/83007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
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H01L2224/83009 3 Pre-treatment of the layer connector or the bonding area
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H01L2224/8301 4 Cleaning the layer connector, e.g. oxide removal step, desmearing
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H01L2224/83011 5 Chemical cleaning, e.g. etching, flux
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H01L2224/83012 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/83013 5 Plasma cleaning
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H01L2224/83014 5 Thermal cleaning, e.g. decomposition, sublimation
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H01L2224/83019 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8301 - H01L2224/83014
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H01L2224/8302 4 Applying permanent coating to the layer connector in the bonding apparatus, e.g. in-situ coating
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H01L2224/83022 4 Cleaning the bonding area, e.g. oxide removal step, desmearing
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H01L2224/83024 4 Applying flux to the bonding area
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H01L2224/83026 4 Applying a precursor material to the bonding area
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H01L2224/8303 4 Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector
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H01L2224/83031 5 by chemical means, e.g. etching, anodisation
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H01L2224/83035 5 by heating means
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H01L2224/83037 6 using a polychromatic heating lamp
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H01L2224/83039 6 using a laser
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H01L2224/83041 6 Induction heating, i.e. eddy currents
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H01L2224/83047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/83048 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/83051 4 Forming additional members, e.g. dam structures
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H01L2224/83052 3 Detaching layer connectors, e.g. after testing (unsoldering in general B23K1/018)
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H01L2224/83053 3 Bonding environment
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H01L2224/83054 4 Composition of the atmosphere
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H01L2224/83055 5 being oxidating
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H01L2224/83065 5 being reducing
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H01L2224/83075 5 being inert
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H01L2224/83085 4 being a liquid, e.g. for fluidic self-assembly
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H01L2224/8309 4 Vacuum
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H01L2224/83091 4 Under pressure
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H01L2224/83092 5 Atmospheric pressure
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H01L2224/83093 5 Transient conditions, e.g. gas-flow
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H01L2224/83095 4 Temperature settings
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H01L2224/83096 5 Transient conditions
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H01L2224/83097 6 Heating
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H01L2224/83098 6 Cooling
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H01L2224/83099 5 Ambient temperature
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H01L2224/831 3 the layer connector being supplied to the parts to be connected in the bonding apparatus
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H01L2224/83101 4 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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H01L2224/83102 4 using surface energy, e.g. capillary forces
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H01L2224/83104 4 by applying pressure, e.g. by injection
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H01L2224/8311 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8312 3 Aligning
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H01L2224/83121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/83122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/83123 6 Shape or position of the body
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H01L2224/83125 6 Bonding areas on the body
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H01L2224/83127 6 Bonding areas outside the body
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H01L2224/83129 6 Shape or position of the other item
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H01L2224/8313 5 using marks formed on the semiconductor or solid-state body
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H01L2224/83132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/83136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/83138 5 the guiding structures being at least partially left in the finished device
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H01L2224/83139 6 Guiding structures on the body
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H01L2224/8314 6 Guiding structures outside the body
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H01L2224/83141 6 Guiding structures both on and outside the body
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H01L2224/83143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/83148 4 involving movement of a part of the bonding apparatus
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H01L2224/83149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8315 6 Rotational movements
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H01L2224/8316 6 Translational movements
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H01L2224/83169 5 being the upper part of the bonding apparatus, i.e. bonding head
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H01L2224/8317 6 Rotational movements
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H01L2224/8318 6 Translational movements
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H01L2224/8319 3 Arrangement of the layer connectors prior to mounting
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H01L2224/83191 4 wherein the layer connectors are disposed only on the semiconductor or solid-state body
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H01L2224/83192 4 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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H01L2224/83193 4 wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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H01L2224/83194 4 Lateral distribution of the layer connectors
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H01L2224/832 3 Applying energy for connecting
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H01L2224/83201 4 Compression bonding
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H01L2224/83203 5 Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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H01L2224/83204 6 with a graded temperature profile
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H01L2224/83205 5 Ultrasonic bonding
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H01L2224/83206 6 Direction of oscillation
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H01L2224/83207 6 Thermosonic bonding
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H01L2224/83208 5 applying unidirectional static pressure
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H01L2224/83209 5 applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid
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H01L2224/8321 4 using a reflow oven
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H01L2224/83211 5 with a graded temperature profile
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H01L2224/8322 4 with energy being in the form of electromagnetic radiation
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H01L2224/83222 5 Induction heating, i.e. eddy currents
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H01L2224/83224 5 using a laser
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H01L2224/8323 5 Polychromatic or infrared lamp heating
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H01L2224/83232 4 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/83234 4 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/83236 4 using electro-static corona discharge
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H01L2224/83237 4 using an electron beam (electron beam welding in general B23K15/00)
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H01L2224/83238 4 using electric resistance welding, i.e. ohmic heating
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H01L2224/8334 3 Bonding interfaces of the layer connector
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H01L2224/83345 4 Shape, e.g. interlocking features
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H01L2224/83355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/83359 4 Material
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H01L2224/8336 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/83365 4 Shape, e.g. interlocking features
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H01L2224/83375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/83379 4 Material (material of the layer connector prior to the connecting process H01L2224/29099 and H01L2224/29599, and subgroups)
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H01L2224/8338 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/83385 4 Shape, e.g. interlocking features
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H01L2224/83395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/83399 4 Material
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H01L2224/834 5 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/83401 6 the principal constituent melting at a temperature of less than 400°C
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H01L2224/83405 7 Gallium [Ga] as principal constituent
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H01L2224/83409 7 Indium [In] as principal constituent
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H01L2224/83411 7 Tin [Sn] as principal constituent
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H01L2224/83413 7 Bismuth [Bi] as principal constituent
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H01L2224/83414 7 Thallium [Tl] as principal constituent
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H01L2224/83416 7 Lead [Pb] as principal constituent
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H01L2224/83417 6 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/83418 7 Zinc [Zn] as principal constituent
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H01L2224/8342 7 Antimony [Sb] as principal constituent
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H01L2224/83423 7 Magnesium [Mg] as principal constituent
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H01L2224/83424 7 Aluminium [Al] as principal constituent
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H01L2224/83438 6 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/83439 7 Silver [Ag] as principal constituent
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H01L2224/83444 7 Gold [Au] as principal constituent
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H01L2224/83447 7 Copper [Cu] as principal constituent
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H01L2224/83449 7 Manganese [Mn] as principal constituent
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H01L2224/83455 7 Nickel [Ni] as principal constituent
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H01L2224/83457 7 Cobalt [Co] as principal constituent
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H01L2224/8346 7 Iron [Fe] as principal constituent
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H01L2224/83463 6 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/83464 7 Palladium [Pd] as principal constituent
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H01L2224/83466 7 Titanium [Ti] as principal constituent
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H01L2224/83469 7 Platinum [Pt] as principal constituent
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H01L2224/8347 7 Zirconium [Zr] as principal constituent
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H01L2224/83471 7 Chromium [Cr] as principal constituent
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H01L2224/83472 7 Vanadium [V] as principal constituent
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H01L2224/83473 7 Rhodium [Rh] as principal constituent
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H01L2224/83476 7 Ruthenium [Ru] as principal constituent
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H01L2224/83478 7 Iridium [Ir] as principal constituent
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H01L2224/83479 7 Niobium [Nb] as principal constituent
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H01L2224/8348 7 Molybdenum [Mo] as principal constituent
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H01L2224/83481 7 Tantalum [Ta] as principal constituent
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H01L2224/83483 7 Rhenium [Re] as principal constituent
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H01L2224/83484 7 Tungsten [W] as principal constituent
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H01L2224/83486 5 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/83487 6 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/83488)
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H01L2224/83488 6 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8349 5 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/83491 6 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/83493 5 with a principal constituent of the material being a solid not provided for in groups H01L2224/834 - H01L2224/83491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/83494 5 with a principal constituent of the material being a liquid not provided for in groups H01L2224/834 - H01L2224/83491
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H01L2224/83495 5 with a principal constituent of the material being a gas not provided for in groups H01L2224/834 - H01L2224/83491
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H01L2224/83498 5 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/83499 6 Material of the matrix
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H01L2224/835 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/83501 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/83505 9 Gallium [Ga] as principal constituent
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H01L2224/83509 9 Indium [In] as principal constituent
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H01L2224/83511 9 Tin [Sn] as principal constituent
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H01L2224/83513 9 Bismuth [Bi] as principal constituent
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H01L2224/83514 9 Thallium [Tl] as principal constituent
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H01L2224/83516 9 Lead [Pb] as principal constituent
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H01L2224/83517 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/83518 9 Zinc [Zn] as principal constituent
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H01L2224/8352 9 Antimony [Sb] as principal constituent
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H01L2224/83523 9 Magnesium [Mg] as principal constituent
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H01L2224/83524 9 Aluminium [Al] as principal constituent
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H01L2224/83538 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/83539 9 Silver [Ag] as principal constituent
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H01L2224/83544 9 Gold [Au] as principal constituent
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H01L2224/83547 9 Copper [Cu] as principal constituent
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H01L2224/83549 9 Manganese [Mn] as principal constituent
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H01L2224/83555 9 Nickel [Ni] as principal constituent
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H01L2224/83557 9 Cobalt [Co] as principal constituent
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H01L2224/8356 9 Iron [Fe] as principal constituent
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H01L2224/83563 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/83564 9 Palladium [Pd] as principal constituent
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H01L2224/83566 9 Titanium [Ti] as principal constituent
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H01L2224/83569 9 Platinum [Pt] as principal constituent
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H01L2224/8357 9 Zirconium [Zr] as principal constituent
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H01L2224/83571 9 Chromium [Cr] as principal constituent
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H01L2224/83572 9 Vanadium [V] as principal constituent
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H01L2224/83573 9 Rhodium [Rh] as principal constituent
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H01L2224/83576 9 Ruthenium [Ru] as principal constituent
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H01L2224/83578 9 Iridium [Ir] as principal constituent
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H01L2224/83579 9 Niobium [Nb] as principal constituent
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H01L2224/8358 9 Molybdenum [Mo] as principal constituent
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H01L2224/83581 9 Tantalum [Ta] as principal constituent
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H01L2224/83583 9 Rhenium [Re] as principal constituent
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H01L2224/83584 9 Tungsten [W] as principal constituent
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H01L2224/83586 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/83587 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/83588)
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H01L2224/83588 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8359 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/83591 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/83593 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/835 - H01L2224/83591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/83594 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/835 - H01L2224/83591
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H01L2224/83595 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/835 - H01L2224/83591
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H01L2224/83598 6 Fillers
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H01L2224/83599 7 Base material
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H01L2224/836 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/83601 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/83605 10 Gallium [Ga] as principal constituent
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H01L2224/83609 10 Indium [In] as principal constituent
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H01L2224/83611 10 Tin [Sn] as principal constituent
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H01L2224/83613 10 Bismuth [Bi] as principal constituent
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H01L2224/83614 10 Thallium [Tl] as principal constituent
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H01L2224/83616 10 Lead [Pb] as principal constituent
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H01L2224/83617 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/83618 10 Zinc [Zn] as principal constituent
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H01L2224/8362 10 Antimony [Sb] as principal constituent
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H01L2224/83623 10 Magnesium [Mg] as principal constituent
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H01L2224/83624 10 Aluminium [Al] as principal constituent
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H01L2224/83638 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/83639 10 Silver [Ag] as principal constituent
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H01L2224/83644 10 Gold [Au] as principal constituent
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H01L2224/83647 10 Copper [Cu] as principal constituent
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H01L2224/83649 10 Manganese [Mn] as principal constituent
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H01L2224/83655 10 Nickel [Ni] as principal constituent
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H01L2224/83657 10 Cobalt [Co] as principal constituent
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H01L2224/8366 10 Iron [Fe] as principal constituent
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H01L2224/83663 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/83664 10 Palladium [Pd] as principal constituent
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H01L2224/83666 10 Titanium [Ti] as principal constituent
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H01L2224/83669 10 Platinum [Pt] as principal constituent
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H01L2224/8367 10 Zirconium [Zr] as principal constituent
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H01L2224/83671 10 Chromium [Cr] as principal constituent
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H01L2224/83672 10 Vanadium [V] as principal constituent
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H01L2224/83673 10 Rhodium [Rh] as principal constituent
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H01L2224/83676 10 Ruthenium [Ru] as principal constituent
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H01L2224/83678 10 Iridium [Ir] as principal constituent
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H01L2224/83679 10 Niobium [Nb] as principal constituent
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H01L2224/8368 10 Molybdenum [Mo] as principal constituent
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H01L2224/83681 10 Tantalum [Ta] as principal constituent
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H01L2224/83683 10 Rhenium [Re] as principal constituent
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H01L2224/83684 10 Tungsten [W] as principal constituent
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H01L2224/83686 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/83687 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/83688)
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H01L2224/83688 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8369 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/83691 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/83693 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/836 - H01L2224/83691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/83694 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/836 - H01L2224/83691
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H01L2224/83695 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/836 - H01L2224/83691
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H01L2224/83698 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/83699 7 Coating material
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H01L2224/837 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/83701 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/83705 10 Gallium [Ga] as principal constituent
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H01L2224/83709 10 Indium [In] as principal constituent
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H01L2224/83711 10 Tin [Sn] as principal constituent
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H01L2224/83713 10 Bismuth [Bi] as principal constituent
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H01L2224/83714 10 Thallium [Tl] as principal constituent
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H01L2224/83716 10 Lead [Pb] as principal constituent
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H01L2224/83717 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/83718 10 Zinc [Zn] as principal constituent
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H01L2224/8372 10 Antimony [Sb] as principal constituent
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H01L2224/83723 10 Magnesium [Mg] as principal constituent
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H01L2224/83724 10 Aluminium [Al] as principal constituent
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H01L2224/83738 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/83739 10 Silver [Ag] as principal constituent
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H01L2224/83744 10 Gold [Au] as principal constituent
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H01L2224/83747 10 Copper [Cu] as principal constituent
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H01L2224/83749 10 Manganese [Mn] as principal constituent
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H01L2224/83755 10 Nickel [Ni] as principal constituent
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H01L2224/83757 10 Cobalt [Co] as principal constituent
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H01L2224/8376 10 Iron [Fe] as principal constituent
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H01L2224/83763 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/83764 10 Palladium [Pd] as principal constituent
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H01L2224/83766 10 Titanium [Ti] as principal constituent
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H01L2224/83769 10 Platinum [Pt] as principal constituent
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H01L2224/8377 10 Zirconium [Zr] as principal constituent
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H01L2224/83771 10 Chromium [Cr] as principal constituent
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H01L2224/83772 10 Vanadium [V] as principal constituent
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H01L2224/83773 10 Rhodium [Rh] as principal constituent
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H01L2224/83776 10 Ruthenium [Ru] as principal constituent
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H01L2224/83778 10 Iridium [Ir] as principal constituent
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H01L2224/83779 10 Niobium [Nb] as principal constituent
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H01L2224/8378 10 Molybdenum [Mo] as principal constituent
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H01L2224/83781 10 Tantalum [Ta] as principal constituent
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H01L2224/83783 10 Rhenium [Re] as principal constituent
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H01L2224/83784 10 Tungsten [W] as principal constituent
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H01L2224/83786 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/83787 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/83788)
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H01L2224/83788 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8379 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/83791 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/83793 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/837 - H01L2224/83791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/83794 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/837 - H01L2224/83791
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H01L2224/83795 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/837 - H01L2224/83791
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H01L2224/83798 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/83799 7 Shape or distribution of the fillers
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H01L2224/838 3 Bonding techniques
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H01L2224/83801 4 Soldering or alloying
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H01L2224/83805 5 involving forming a eutectic alloy at the bonding interface
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H01L2224/8381 5 involving forming an intermetallic compound at the bonding interface
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H01L2224/83815 5 Reflow soldering
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H01L2224/8382 5 Diffusion bonding
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H01L2224/83825 6 Solid-liquid interdiffusion
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H01L2224/8383 6 Solid-solid interdiffusion
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H01L2224/8384 4 Sintering
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H01L2224/8385 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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H01L2224/83851 5 being an anisotropic conductive adhesive
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H01L2224/83855 5 Hardening the adhesive by curing, i.e. thermosetting
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H01L2224/83856 6 Pre-cured adhesive, i.e. B-stage adhesive
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H01L2224/83859 6 Localised curing of parts of the layer connector
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H01L2224/83862 6 Heat curing
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H01L2224/83865 6 Microwave curing
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H01L2224/83868 6 Infrared [IR] curing
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H01L2224/83871 6 Visible light curing
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H01L2224/83874 6 Ultraviolet [UV] curing
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H01L2224/83877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8388 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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H01L2224/83885 5 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
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H01L2224/83886 4 Involving a self-assembly process, e.g. self-agglomeration of a material dispersed in a fluid
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H01L2224/83887 5 Auxiliary means therefor, e.g. for self-assembly activation
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H01L2224/83888 5 with special adaptation of the surface of the body to be connected, e.g. surface shape specially adapted for the self-assembly process
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H01L2224/83889 5 involving the material of the bonding area, e.g. bonding pad
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H01L2224/8389 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
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H01L2224/83893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
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H01L2224/83894 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/83895 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/83896 5 between electrically insulating surfaces, e.g. oxide or nitride layers
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H01L2224/83897 4 Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like
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H01L2224/83898 5 Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
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H01L2224/83899 6 using resilient parts in the layer connector or in the bonding area
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H01L2224/839 3 with the layer connector not providing any mechanical bonding
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H01L2224/83901 4 Pressing the layer connector against the bonding areas by means of another connector
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H01L2224/83902 5 by means of another layer connector
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H01L2224/83903 5 by means of a bump connector
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H01L2224/83904 5 by means of an encapsulation layer or foil
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H01L2224/83905 3 Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
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H01L2224/83906 4 Specific sequence of method steps
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H01L2224/83907 4 Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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H01L2224/83908 3 involving monitoring, e.g. feedback loop
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H01L2224/83909 3 Post-treatment of the layer connector or bonding area
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H01L2224/8391 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/83911 5 Chemical cleaning, e.g. etching, flux
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H01L2224/83912 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/83913 5 Plasma cleaning
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H01L2224/83914 5 Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge
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H01L2224/83919 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8391 - H01L2224/83914
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H01L2224/8392 4 Applying permanent coating, e.g. protective coating
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H01L2224/8393 4 Reshaping
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H01L2224/83931 5 by chemical means, e.g. etching
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H01L2224/83935 5 by heating means, e.g. reflowing
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H01L2224/83937 6 using a polychromatic heating lamp
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H01L2224/83939 6 using a laser
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H01L2224/83941 6 Induction heating, i.e. eddy currents
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H01L2224/83943 6 using a flame torch, e.g. hydrogen torch
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H01L2224/83945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/83947 5 by mechanical means, e.g. "pull-and-cut", pressing, stamping
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H01L2224/83948 4 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/83951 4 Forming additional members, e.g. for reinforcing, fillet sealant
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H01L2224/83986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/84 2 using a strap connector
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H01L2224/84001 3 involving a temporary auxiliary member not forming part of the bonding apparatus
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H01L2224/84002 4 being a removable or sacrificial coating
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H01L2224/84005 4 being a temporary substrate
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H01L2224/84007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the strap connector during or after the bonding process
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H01L2224/84009 3 Pre-treatment of the connector and/or the bonding area
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H01L2224/8401 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/84011 5 Chemical cleaning, e.g. etching, flux
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H01L2224/84012 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/84013 5 Plasma cleaning
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H01L2224/84014 5 Thermal cleaning, e.g. decomposition, sublimation
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H01L2224/84019 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8401 - H01L2224/84014
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H01L2224/8402 4 Applying permanent coating, e.g. in-situ coating
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H01L2224/8403 4 Reshaping
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H01L2224/84031 5 by chemical means, e.g. etching, anodisation
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H01L2224/84035 5 by heating means, e.g. "free-air-ball"
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H01L2224/84037 6 using a polychromatic heating lamp
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H01L2224/84039 6 using a laser
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H01L2224/84041 6 Induction heating, i.e. eddy currents
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H01L2224/84043 6 using a flame torch, e.g. hydrogen torch
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H01L2224/84045 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/84047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/84048 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/84051 4 Forming additional members
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H01L2224/84053 3 Bonding environment
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H01L2224/84054 4 Composition of the atmosphere
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H01L2224/84055 5 being oxidating
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H01L2224/84065 5 being reducing
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H01L2224/84075 5 being inert
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H01L2224/84085 4 being a liquid (e.g. for fluidic self-assembly)
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H01L2224/8409 4 Vacuum
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H01L2224/84091 4 Under pressure
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H01L2224/84092 5 Atmospheric pressure
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H01L2224/84093 5 Transient conditions, e.g. gas-flow
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H01L2224/84095 4 Temperature settings
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H01L2224/84096 5 Transient conditions
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H01L2224/84097 6 Heating
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H01L2224/84098 6 Cooling
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H01L2224/84099 5 Ambient temperature
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H01L2224/841 3 the connector being supplied to the parts to be connected in the bonding apparatus
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H01L2224/8411 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8412 3 Aligning
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H01L2224/84121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/84122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/84123 6 Shape or position of the body
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H01L2224/84125 6 Bonding areas on the body
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H01L2224/84127 6 Bonding areas outside the body
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H01L2224/84129 6 Shape or position of the other item
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H01L2224/8413 5 using marks formed on the semiconductor or solid-state body
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H01L2224/84132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/84136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/84138 5 the guiding structures being at least partially left in the finished device
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H01L2224/84143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/84148 4 involving movement of a part of the bonding apparatus
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H01L2224/84149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8415 6 Rotational movements
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H01L2224/8416 6 Translational movements
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H01L2224/84169 5 being the upper part of the bonding apparatus, i.e. bonding head,
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H01L2224/8417 6 Rotational movements
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H01L2224/8418 6 Translational movements
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H01L2224/84181 7 connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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H01L2224/84186 7 connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
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H01L2224/84191 7 connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches
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H01L2224/84196 7 involving intermediate connecting steps before cutting the strap connector
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H01L2224/842 3 Applying energy for connecting
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H01L2224/84201 4 Compression bonding
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H01L2224/84203 5 Thermocompression bonding
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H01L2224/84205 5 Ultrasonic bonding
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H01L2224/84206 6 Direction of oscillation
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H01L2224/84207 6 Thermosonic bonding
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H01L2224/8421 4 with energy being in the form of electromagnetic radiation
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H01L2224/84212 5 Induction heating, i.e. eddy currents
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H01L2224/84214 5 using a laser
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H01L2224/8423 5 Polychromatic or infrared lamp heating
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H01L2224/84232 4 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/84234 4 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/84236 4 using electro-static corona discharge
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H01L2224/84237 4 using an electron beam (electron beam welding in general B23K15/00)
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H01L2224/84238 4 using electric resistance welding, i.e. ohmic heating
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H01L2224/8434 3 Bonding interfaces of the connector
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H01L2224/84345 4 Shape, e.g. interlocking features
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H01L2224/84355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/84359 4 Material
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H01L2224/8436 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/84365 4 Shape, e.g. interlocking features
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H01L2224/84375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/84379 4 Material
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H01L2224/8438 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/84385 4 Shape, e.g. interlocking features
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H01L2224/84395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/84399 4 Material
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H01L2224/844 5 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/84401 6 the principal constituent melting at a temperature of less than 400°C
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H01L2224/84405 7 Gallium [Ga] as principal constituent
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H01L2224/84409 7 Indium [In] as principal constituent
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H01L2224/84411 7 Tin [Sn] as principal constituent
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H01L2224/84413 7 Bismuth [Bi] as principal constituent
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H01L2224/84414 7 Thallium [Tl] as principal constituent
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H01L2224/84416 7 Lead [Pb] as principal constituent
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H01L2224/84417 6 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/84418 7 Zinc [Zn] as principal constituent
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H01L2224/8442 7 Antimony [Sb] as principal constituent
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H01L2224/84423 7 Magnesium [Mg] as principal constituent
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H01L2224/84424 7 Aluminium [Al] as principal constituent
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H01L2224/84438 6 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/84439 7 Silver [Ag] as principal constituent
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H01L2224/84444 7 Gold [Au] as principal constituent
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H01L2224/84447 7 Copper [Cu] as principal constituent
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H01L2224/84449 7 Manganese [Mn] as principal constituent
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H01L2224/84455 7 Nickel [Ni] as principal constituent
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H01L2224/84457 7 Cobalt [Co] as principal constituent
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H01L2224/8446 7 Iron [Fe] as principal constituent
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H01L2224/84463 6 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/84464 7 Palladium [Pd] as principal constituent
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H01L2224/84466 7 Titanium [Ti] as principal constituent
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H01L2224/84469 7 Platinum [Pt] as principal constituent
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H01L2224/8447 7 Zirconium [Zr] as principal constituent
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H01L2224/84471 7 Chromium [Cr] as principal constituent
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H01L2224/84472 7 Vanadium [V] as principal constituent
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H01L2224/84473 7 Rhodium [Rh] as principal constituent
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H01L2224/84476 7 Ruthenium [Ru] as principal constituent
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H01L2224/84478 7 Iridium [Ir] as principal constituent
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H01L2224/84479 7 Niobium [Nb] as principal constituent
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H01L2224/8448 7 Molybdenum [Mo] as principal constituent
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H01L2224/84481 7 Tantalum [Ta] as principal constituent
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H01L2224/84483 7 Rhenium [Re] as principal constituent
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H01L2224/84484 7 Tungsten [W] as principal constituent
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H01L2224/84486 5 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/84487 6 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/84488)
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H01L2224/84488 6 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8449 5 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/84491 6 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/84493 5 with a principal constituent of the material being a solid not provided for in groups H01L2224/844 - H01L2224/84491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/84494 5 with a principal constituent of the material being a liquid not provided for in groups H01L2224/844 - H01L2224/84491
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H01L2224/84495 5 with a principal constituent of the material being a gas not provided for in groups H01L2224/844 - H01L2224/84491
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H01L2224/84498 5 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/84499 6 Material of the matrix
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H01L2224/845 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/84501 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/84505 9 Gallium [Ga] as principal constituent
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H01L2224/84509 9 Indium [In] as principal constituent
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H01L2224/84511 9 Tin [Sn] as principal constituent
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H01L2224/84513 9 Bismuth [Bi] as principal constituent
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H01L2224/84514 9 Thallium [Tl] as principal constituent
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H01L2224/84516 9 Lead [Pb] as principal constituent
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H01L2224/84517 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/84518 9 Zinc [Zn] as principal constituent
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H01L2224/8452 9 Antimony [Sb] as principal constituent
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H01L2224/84523 9 Magnesium [Mg] as principal constituent
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H01L2224/84524 9 Aluminium [Al] as principal constituent
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H01L2224/84538 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/84539 9 Silver [Ag] as principal constituent
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H01L2224/84544 9 Gold [Au] as principal constituent
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H01L2224/84547 9 Copper [Cu] as principal constituent
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H01L2224/84549 9 Manganese [Mn] as principal constituent
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H01L2224/84555 9 Nickel [Ni] as principal constituent
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H01L2224/84557 9 Cobalt [Co] as principal constituent
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H01L2224/8456 9 Iron [Fe] as principal constituent
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H01L2224/84563 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/84564 9 Palladium [Pd] as principal constituent
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H01L2224/84566 9 Titanium [Ti] as principal constituent
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H01L2224/84569 9 Platinum [Pt] as principal constituent
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H01L2224/8457 9 Zirconium [Zr] as principal constituent
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H01L2224/84571 9 Chromium [Cr] as principal constituent
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H01L2224/84572 9 Vanadium [V] as principal constituent
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H01L2224/84573 9 Rhodium [Rh] as principal constituent
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H01L2224/84576 9 Ruthenium [Ru] as principal constituent
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H01L2224/84578 9 Iridium [Ir] as principal constituent
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H01L2224/84579 9 Niobium [Nb] as principal constituent
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H01L2224/8458 9 Molybdenum [Mo] as principal constituent
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H01L2224/84581 9 Tantalum [Ta] as principal constituent
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H01L2224/84583 9 Rhenium [Re] as principal constituent
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H01L2224/84584 9 Tungsten [W] as principal constituent
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H01L2224/84586 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/84587 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/84588)
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H01L2224/84588 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8459 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/84591 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/84593 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/845 - H01L2224/84591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/84594 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/845 - H01L2224/84591
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H01L2224/84595 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/845 - H01L2224/84591
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H01L2224/84598 6 Fillers
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H01L2224/84599 7 Base material
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H01L2224/846 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/84601 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/84605 10 Gallium [Ga] as principal constituent
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H01L2224/84609 10 Indium [In] as principal constituent
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H01L2224/84611 10 Tin [Sn] as principal constituent
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H01L2224/84613 10 Bismuth [Bi] as principal constituent
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H01L2224/84614 10 Thallium [Tl] as principal constituent
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H01L2224/84616 10 Lead [Pb] as principal constituent
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H01L2224/84617 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/84618 10 Zinc [Zn] as principal constituent
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H01L2224/8462 10 Antimony [Sb] as principal constituent
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H01L2224/84623 10 Magnesium [Mg] as principal constituent
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H01L2224/84624 10 Aluminium [Al] as principal constituent
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H01L2224/84638 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/84639 10 Silver [Ag] as principal constituent
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H01L2224/84644 10 Gold [Au] as principal constituent
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H01L2224/84647 10 Copper [Cu] as principal constituent
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H01L2224/84649 10 Manganese [Mn] as principal constituent
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H01L2224/84655 10 Nickel [Ni] as principal constituent
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H01L2224/84657 10 Cobalt [Co] as principal constituent
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H01L2224/8466 10 Iron [Fe] as principal constituent
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H01L2224/84663 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/84664 10 Palladium [Pd] as principal constituent
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H01L2224/84666 10 Titanium [Ti] as principal constituent
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H01L2224/84669 10 Platinum [Pt] as principal constituent
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H01L2224/8467 10 Zirconium [Zr] as principal constituent
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H01L2224/84671 10 Chromium [Cr] as principal constituent
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H01L2224/84672 10 Vanadium [V] as principal constituent
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H01L2224/84673 10 Rhodium [Rh] as principal constituent
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H01L2224/84676 10 Ruthenium [Ru] as principal constituent
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H01L2224/84678 10 Iridium [Ir] as principal constituent
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H01L2224/84679 10 Niobium [Nb] as principal constituent
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H01L2224/8468 10 Molybdenum [Mo] as principal constituent
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H01L2224/84681 10 Tantalum [Ta] as principal constituent
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H01L2224/84683 10 Rhenium [Re] as principal constituent
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H01L2224/84684 10 Tungsten [W] as principal constituent
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H01L2224/84686 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/84687 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/84688)
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H01L2224/84688 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8469 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/84691 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/84693 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/846 - H01L2224/84691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/84694 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/846 - H01L2224/84691
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H01L2224/84695 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/846 - H01L2224/84691
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H01L2224/84698 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/84699 7 Coating material
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H01L2224/847 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/84701 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/84705 10 Gallium [Ga] as principal constituent
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H01L2224/84709 10 Indium [In] as principal constituent
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H01L2224/84711 10 Tin [Sn] as principal constituent
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H01L2224/84713 10 Bismuth [Bi] as principal constituent
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H01L2224/84714 10 Thallium [Tl] as principal constituent
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H01L2224/84716 10 Lead [Pb] as principal constituent
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H01L2224/84717 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/84718 10 Zinc [Zn] as principal constituent
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H01L2224/8472 10 Antimony [Sb] as principal constituent
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H01L2224/84723 10 Magnesium [Mg] as principal constituent
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H01L2224/84724 10 Aluminium [Al] as principal constituent
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H01L2224/84738 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/84739 10 Silver [Ag] as principal constituent
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H01L2224/84744 10 Gold [Au] as principal constituent
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H01L2224/84747 10 Copper [Cu] as principal constituent
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H01L2224/84749 10 Manganese [Mn] as principal constituent
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H01L2224/84755 10 Nickel [Ni] as principal constituent
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H01L2224/84757 10 Cobalt [Co] as principal constituent
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H01L2224/8476 10 Iron [Fe] as principal constituent
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H01L2224/84763 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/84764 10 Palladium [Pd] as principal constituent
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H01L2224/84766 10 Titanium [Ti] as principal constituent
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H01L2224/84769 10 Platinum [Pt] as principal constituent
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H01L2224/8477 10 Zirconium [Zr] as principal constituent
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H01L2224/84771 10 Chromium [Cr] as principal constituent
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H01L2224/84772 10 Vanadium [V] as principal constituent
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H01L2224/84773 10 Rhodium [Rh] as principal constituent
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H01L2224/84776 10 Ruthenium [Ru] as principal constituent
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H01L2224/84778 10 Iridium [Ir] as principal constituent
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H01L2224/84779 10 Niobium [Nb] as principal constituent
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H01L2224/8478 10 Molybdenum [Mo] as principal constituent
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H01L2224/84781 10 Tantalum [Ta] as principal constituent
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H01L2224/84783 10 Rhenium [Re] as principal constituent
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H01L2224/84784 10 Tungsten [W] as principal constituent
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H01L2224/84786 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/84787 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/84788)
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H01L2224/84788 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8479 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/84791 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/84793 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/847 - H01L2224/84791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/84794 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/847 - H01L2224/84791
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H01L2224/84795 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/847 - H01L2224/84791
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H01L2224/84798 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/84799 7 Shape or distribution of the fillers
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H01L2224/848 3 Bonding techniques
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H01L2224/84801 4 Soldering or alloying
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H01L2224/84805 5 involving forming a eutectic alloy at the bonding interface
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H01L2224/8481 5 involving forming an intermetallic compound at the bonding interface
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H01L2224/84815 5 Reflow soldering
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H01L2224/8482 5 Diffusion bonding
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H01L2224/84825 6 Solid-liquid interdiffusion
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H01L2224/8483 6 Solid-solid interdiffusion
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H01L2224/8484 4 Sintering
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H01L2224/8485 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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H01L2224/84855 5 Hardening the adhesive by curing, i.e. thermosetting
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H01L2224/84856 6 Pre-cured adhesive, i.e. B-stage adhesive
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H01L2224/84859 6 Localised curing of parts of the connector
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H01L2224/84862 6 Heat curing
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H01L2224/84865 6 Microwave curing
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H01L2224/84868 6 Infrared [IR] curing
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H01L2224/84871 6 Visible light curing
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H01L2224/84874 6 Ultraviolet [UV] curing
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H01L2224/84877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8488 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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H01L2224/84885 5 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/84855 - H01L2224/8488, e.g. for hybrid thermoplastic-thermosetting adhesives
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H01L2224/8489 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
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H01L2224/84893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
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H01L2224/84895 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/84897 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/84898 5 between electrically insulating surfaces, e.g. oxide or nitride layersg
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H01L2224/84899 4 Combinations of bonding methods provided for in at least two different groups from H01L2224/848 - H01L2224/84898
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H01L2224/849 3 involving monitoring, e.g. feedback loop
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H01L2224/84909 3 Post-treatment of the connector or bonding area
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H01L2224/8491 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/84911 5 Chemical cleaning, e.g. etching, flux
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H01L2224/84912 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/84913 5 Plasma cleaning
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H01L2224/84914 5 Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge
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H01L2224/84919 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8491 - H01L2224/84914
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H01L2224/8492 4 Applying permanent coating, e.g. protective coating
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H01L2224/8493 4 Reshaping, e.g. for severing the strap, modifying the loop shape
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H01L2224/84931 5 by chemical means, e.g. etching
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H01L2224/84935 5 by heating means, e.g. reflowing
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H01L2224/84937 6 using a polychromatic heating lamp
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H01L2224/84939 6 using a laser
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H01L2224/84941 6 Induction heating, i.e. eddy currents
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H01L2224/84943 6 using a flame torch, e.g. hydrogen torch
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H01L2224/84945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/84947 5 by mechanical means, e.g. pressing, stamping
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H01L2224/84948 4 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/84951 4 Forming additional members, e.g. for reinforcing
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H01L2224/84986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/85 2 using a wire connector
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H01L2224/85001 3 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/85002 4 being a removable or sacrificial coating
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H01L2224/85005 4 being a temporary or sacrificial substrate
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H01L2224/85007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the wire connector during or after the bonding process
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H01L2224/85009 3 Pre-treatment of the connector or the bonding area
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H01L2224/8501 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/85011 5 Chemical cleaning, e.g. etching, flux
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H01L2224/85012 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/85013 5 Plasma cleaning
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H01L2224/85014 5 Thermal cleaning, e.g. decomposition, sublimation
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H01L2224/85016 6 using a laser
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H01L2224/85017 5 Electron beam cleaning
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H01L2224/85019 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8501 - H01L2224/85014
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H01L2224/8502 4 Applying permanent coating, e.g. in-situ coating
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H01L2224/8503 4 Reshaping, e.g. forming the ball or the wedge of the wire connector
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H01L2224/85031 5 by chemical means, e.g. etching, anodisation
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H01L2224/85035 5 by heating means, e.g. "free-air-ball"
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H01L2224/85037 6 using a polychromatic heating lamp
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H01L2224/85039 6 using a laser
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H01L2224/85041 6 Induction heating, i.e. eddy currents
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H01L2224/85043 6 using a flame torch, e.g. hydrogen torch
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H01L2224/85045 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/85047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/85048 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/85051 4 Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
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H01L2224/85053 3 Bonding environment
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H01L2224/85054 4 Composition of the atmosphere
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H01L2224/85055 5 being oxidating
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H01L2224/85065 5 being reducing
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H01L2224/85075 5 being inert
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H01L2224/85085 4 being a liquid, e.g. for fluidic self-assembly
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H01L2224/8509 4 Vacuum
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H01L2224/85091 4 Under pressure
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H01L2224/85092 5 Atmospheric pressure
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H01L2224/85093 5 Transient conditions, e.g. gas-flow
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H01L2224/85095 4 Temperature settings
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H01L2224/85096 5 Transient conditions
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H01L2224/85097 6 Heating
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H01L2224/85098 6 Cooling
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H01L2224/85099 5 Ambient temperature
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H01L2224/851 3 the connector being supplied to the parts to be connected in the bonding apparatus
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H01L2224/8511 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8512 3 Aligning
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H01L2224/85121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/85122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/85123 6 Shape or position of the body
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H01L2224/85125 6 Bonding areas on the body
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H01L2224/85127 6 Bonding areas outside the body
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H01L2224/85129 6 Shape or position of the other item
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H01L2224/8513 5 using marks formed on the semiconductor or solid-state body
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H01L2224/85132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/85136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/85138 5 the guiding structures being at least partially left in the finished device
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H01L2224/85143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/85148 4 involving movement of a part of the bonding apparatus
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H01L2224/85149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8515 6 Rotational movements
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H01L2224/8516 6 Translational movements
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H01L2224/85169 5 being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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H01L2224/8517 6 Rotational movements
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H01L2224/8518 6 Translational movements
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H01L2224/85181 7 connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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H01L2224/85186 7 connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
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H01L2224/85191 7 connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches
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H01L2224/85196 7 involving intermediate connecting steps before cutting the wire connector
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H01L2224/852 3 Applying energy for connecting
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H01L2224/85201 4 Compression bonding
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H01L2224/85203 5 Thermocompression bonding
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H01L2224/85205 5 Ultrasonic bonding
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H01L2224/85206 6 Direction of oscillation
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H01L2224/85207 6 Thermosonic bonding
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H01L2224/8521 4 with energy being in the form of electromagnetic radiation
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H01L2224/85212 5 Induction heating, i.e. eddy currents
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H01L2224/85214 5 using a laser
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H01L2224/8523 5 Polychromatic or infrared lamp heating
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H01L2224/85232 4 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/85234 4 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/85236 4 using electro-static corona discharge
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H01L2224/85237 4 using electron beam (using electron beam in general B23K15/00)
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H01L2224/85238 4 using electric resistance welding, i.e. ohmic heating
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H01L2224/8534 3 Bonding interfaces of the connector
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H01L2224/85345 4 Shape, e.g. interlocking features
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H01L2224/85355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/85359 4 Material
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H01L2224/8536 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/85365 4 Shape, e.g. interlocking features
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H01L2224/85375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/85379 4 Material
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H01L2224/8538 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/85385 4 Shape, e.g. interlocking features
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H01L2224/85395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/85399 4 Material
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H01L2224/854 5 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/85401 6 the principal constituent melting at a temperature of less than 400°C
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H01L2224/85405 7 Gallium (Ga) as principal constituent
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H01L2224/85409 7 Indium (In) as principal constituent
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H01L2224/85411 7 Tin (Sn) as principal constituent
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H01L2224/85413 7 Bismuth (Bi) as principal constituent
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H01L2224/85414 7 Thallium (Tl) as principal constituent
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H01L2224/85416 7 Lead (Pb) as principal constituent
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H01L2224/85417 6 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/85418 7 Zinc (Zn) as principal constituent
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H01L2224/8542 7 Antimony (Sb) as principal constituent
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H01L2224/85423 7 Magnesium (Mg) as principal constituent
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H01L2224/85424 7 Aluminium (Al) as principal constituent
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H01L2224/85438 6 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/85439 7 Silver (Ag) as principal constituent
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H01L2224/85444 7 Gold (Au) as principal constituent
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H01L2224/85447 7 Copper (Cu) as principal constituent
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H01L2224/85449 7 Manganese (Mn) as principal constituent
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H01L2224/85455 7 Nickel (Ni) as principal constituent
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H01L2224/85457 7 Cobalt (Co) as principal constituent
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H01L2224/8546 7 Iron (Fe) as principal constituent
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H01L2224/85463 6 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/85464 7 Palladium (Pd) as principal constituent
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H01L2224/85466 7 Titanium (Ti) as principal constituent
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H01L2224/85469 7 Platinum (Pt) as principal constituent
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H01L2224/8547 7 Zirconium (Zr) as principal constituent
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H01L2224/85471 7 Chromium (Cr) as principal constituent
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H01L2224/85472 7 Vanadium (V) as principal constituent
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H01L2224/85473 7 Rhodium (Rh) as principal constituent
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H01L2224/85476 7 Ruthenium (Ru) as principal constituent
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H01L2224/85478 7 Iridium (Ir) as principal constituent
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H01L2224/85479 7 Niobium (Nb) as principal constituent
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H01L2224/8548 7 Molybdenum (Mo) as principal constituent
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H01L2224/85481 7 Tantalum (Ta) as principal constituent
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H01L2224/85483 7 Rhenium (Re) as principal constituent
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H01L2224/85484 7 Tungsten (W) as principal constituent
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H01L2224/85486 5 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/85487 6 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/85488)
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H01L2224/85488 6 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8549 5 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/85491 6 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/85493 5 with a principal constituent of the material being a solid not provided for in groups H01L2224/854 - H01L2224/85491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/85494 5 with a principal constituent of the material being a liquid not provided for in groups H01L2224/854 - H01L2224/85491
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H01L2224/85495 5 with a principal constituent of the material being a gas not provided for in groups H01L2224/854 - H01L2224/85491
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H01L2224/85498 5 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/85499 6 Material of the matrix
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H01L2224/855 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/85501 8 the principal constituent melting at a temperature of less than 400°C
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H01L2224/85505 9 Gallium (Ga) as principal constituent
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H01L2224/85509 9 Indium (In) as principal constituent
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H01L2224/85511 9 Tin (Sn) as principal constituent
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H01L2224/85513 9 Bismuth (Bi) as principal constituent
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H01L2224/85514 9 Thallium (Tl) as principal constituent
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H01L2224/85516 9 Lead (Pb) as principal constituent
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H01L2224/85517 8 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/85518 9 Zinc (Zn) as principal constituent
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H01L2224/8552 9 Antimony (Sb) as principal constituent
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H01L2224/85523 9 Magnesium (Mg) as principal constituent
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H01L2224/85524 9 Aluminium (Al) as principal constituent
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H01L2224/85538 8 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/85539 9 Silver (Ag) as principal constituent
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H01L2224/85544 9 Gold (Au) as principal constituent
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H01L2224/85547 9 Copper (Cu) as principal constituent
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H01L2224/85549 9 Manganese (Mn) as principal constituent
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H01L2224/85555 9 Nickel (Ni) as principal constituent
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H01L2224/85557 9 Cobalt (Co) as principal constituent
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H01L2224/8556 9 Iron (Fe) as principal constituent
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H01L2224/85563 8 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/85564 9 Palladium (Pd) as principal constituent
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H01L2224/85566 9 Titanium (Ti) as principal constituent
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H01L2224/85569 9 Platinum (Pt) as principal constituent
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H01L2224/8557 9 Zirconium (Zr) as principal constituent
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H01L2224/85571 9 Chromium (Cr) as principal constituent
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H01L2224/85572 9 Vanadium (V) as principal constituent
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H01L2224/85573 9 Rhodium (Rh) as principal constituent
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H01L2224/85576 9 Ruthenium (Ru) as principal constituent
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H01L2224/85578 9 Iridium (Ir) as principal constituent
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H01L2224/85579 9 Niobium (Nb) as principal constituent
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H01L2224/8558 9 Molybdenum (Mo) as principal constituent
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H01L2224/85581 9 Tantalum (Ta) as principal constituent
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H01L2224/85583 9 Rhenium (Re) as principal constituent
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H01L2224/85584 9 Tungsten (W) as principal constituent
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H01L2224/85586 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/85587 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/85588)
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H01L2224/85588 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8559 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/85591 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/85593 7 with a principal constituent of the material being a solid not provided for in groups H01L2224/855 - H01L2224/85591, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/85594 7 with a principal constituent of the material being a liquid not provided for in groups H01L2224/855 - H01L2224/85591
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H01L2224/85595 7 with a principal constituent of the material being a gas not provided for in groups H01L2224/855 - H01L2224/85591
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H01L2224/85598 6 Fillers
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H01L2224/85599 7 Base material
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H01L2224/856 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/85601 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/85605 10 Gallium (Ga) as principal constituent
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H01L2224/85609 10 Indium (In) as principal constituent
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H01L2224/85611 10 Tin (Sn) as principal constituent
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H01L2224/85613 10 Bismuth (Bi) as principal constituent
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H01L2224/85614 10 Thallium (Tl) as principal constituent
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H01L2224/85616 10 Lead (Pb) as principal constituent
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H01L2224/85617 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/85618 10 Zinc (Zn) as principal constituent
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H01L2224/8562 10 Antimony (Sb) as principal constituent
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H01L2224/85623 10 Magnesium (Mg) as principal constituent
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H01L2224/85624 10 Aluminium (Al) as principal constituent
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H01L2224/85638 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/85639 10 Silver (Ag) as principal constituent
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H01L2224/85644 10 Gold (Au) as principal constituent
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H01L2224/85647 10 Copper (Cu) as principal constituent
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H01L2224/85649 10 Manganese (Mn) as principal constituent
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H01L2224/85655 10 Nickel (Ni) as principal constituent
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H01L2224/85657 10 Cobalt (Co) as principal constituent
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H01L2224/8566 10 Iron (Fe) as principal constituent
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H01L2224/85663 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/85664 10 Palladium (Pd) as principal constituent
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H01L2224/85666 10 Titanium (Ti) as principal constituent
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H01L2224/85669 10 Platinum (Pt) as principal constituent
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H01L2224/8567 10 Zirconium (Zr) as principal constituent
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H01L2224/85671 10 Chromium (Cr) as principal constituent
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H01L2224/85672 10 Vanadium (V) as principal constituent
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H01L2224/85673 10 Rhodium (Rh) as principal constituent
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H01L2224/85676 10 Ruthenium (Ru) as principal constituent
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H01L2224/85678 10 Iridium (Ir) as principal constituent
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H01L2224/85679 10 Niobium (Nb) as principal constituent
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H01L2224/8568 10 Molybdenum (Mo) as principal constituent
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H01L2224/85681 10 Tantalum (Ta) as principal constituent
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H01L2224/85683 10 Rhenium (Re) as principal constituent
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H01L2224/85684 10 Tungsten (W) as principal constituent
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H01L2224/85686 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/85687 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/85688)
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H01L2224/85688 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8569 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/85691 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/85693 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/856 - H01L2224/85691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/85694 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/856 - H01L2224/85691
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H01L2224/85695 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/856 - H01L2224/85691
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H01L2224/85698 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/85699 7 Coating material
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H01L2224/857 8 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/85701 9 the principal constituent melting at a temperature of less than 400°C
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H01L2224/85705 10 Gallium (Ga) as principal constituent
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H01L2224/85709 10 Indium (In) as principal constituent
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H01L2224/85711 10 Tin (Sn) as principal constituent
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H01L2224/85713 10 Bismuth (Bi) as principal constituent
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H01L2224/85714 10 Thallium (Tl) as principal constituent
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H01L2224/85716 10 Lead (Pb) as principal constituent
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H01L2224/85717 9 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/85718 10 Zinc (Zn) as principal constituent
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H01L2224/8572 10 Antimony (Sb) as principal constituent
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H01L2224/85723 10 Magnesium (Mg) as principal constituent
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H01L2224/85724 10 Aluminium (Al) as principal constituent
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H01L2224/85738 9 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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H01L2224/85739 10 Silver (Ag) as principal constituent
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H01L2224/85744 10 Gold (Au) as principal constituent
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H01L2224/85747 10 Copper (Cu) as principal constituent
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H01L2224/85749 10 Manganese (Mn) as principal constituent
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H01L2224/85755 10 Nickel (Ni) as principal constituent
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H01L2224/85757 10 Cobalt (Co) as principal constituent
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H01L2224/8576 10 Iron (Fe) as principal constituent
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H01L2224/85763 9 the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/85764 10 Palladium (Pd) as principal constituent
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H01L2224/85766 10 Titanium (Ti) as principal constituent
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H01L2224/85769 10 Platinum (Pt) as principal constituent
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H01L2224/8577 10 Zirconium (Zr) as principal constituent
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H01L2224/85771 10 Chromium (Cr) as principal constituent
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H01L2224/85772 10 Vanadium (V) as principal constituent
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H01L2224/85773 10 Rhodium (Rh) as principal constituent
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H01L2224/85776 10 Ruthenium (Ru) as principal constituent
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H01L2224/85778 10 Iridium (Ir) as principal constituent
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H01L2224/85779 10 Niobium (Nb) as principal constituent
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H01L2224/8578 10 Molybdenum (Mo) as principal constituent
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H01L2224/85781 10 Tantalum (Ta) as principal constituent
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H01L2224/85783 10 Rhenium (Re) as principal constituent
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H01L2224/85784 10 Tungsten (W) as principal constituent
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H01L2224/85786 8 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/85787 9 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/85788)
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H01L2224/85788 9 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/8579 8 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2224/85791 9 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2224/85793 8 with a principal constituent of the material being a solid not provided for in groups H01L2224/857 - H01L2224/85791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2224/85794 8 with a principal constituent of the material being a liquid not provided for in groups H01L2224/857 - H01L2224/85791
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H01L2224/85795 8 with a principal constituent of the material being a gas not provided for in groups H01L2224/857 - H01L2224/85791
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H01L2224/85798 8 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/85799 6 Shape or distribution of the fillers
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H01L2224/858 3 Bonding techniques
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H01L2224/85801 4 Soldering or alloying
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H01L2224/85805 5 involving forming a eutectic alloy at the bonding interface
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H01L2224/8581 5 involving forming an intermetallic compound at the bonding interface
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H01L2224/85815 5 Reflow soldering
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H01L2224/8582 5 Diffusion bonding
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H01L2224/85825 6 Solid-liquid interdiffusion
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H01L2224/8583 6 Solid-solid interdiffusion, e.g. "direct bonding"
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H01L2224/8584 4 Sintering
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H01L2224/8585 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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H01L2224/85855 5 Hardening the adhesive by curing, i.e. thermosetting
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H01L2224/85856 6 Pre-cured adhesive, i.e. B-stage adhesive
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H01L2224/85859 6 Localised curing of parts of the connector
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H01L2224/85862 6 Heat curing
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H01L2224/85865 6 Microwave curing
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H01L2224/85868 6 Infrared [IR] curing
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H01L2224/85871 6 Visible light curing
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H01L2224/85874 6 Ultraviolet [UV] curing
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H01L2224/85877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8588 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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H01L2224/85885 5 Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/85855 - H01L2224/8588, e.g. for hybrid thermoplastic-thermosetting adhesives
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H01L2224/8589 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
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H01L2224/85893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
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H01L2224/85895 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/85897 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/85898 5 between electrically insulating surfaces, e.g. oxide or nitride layers
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H01L2224/85899 4 Combinations of bonding methods provided for in at least two different groups from H01L2224/858 - H01L2224/85898
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H01L2224/859 3 involving monitoring, e.g. feedback loop
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H01L2224/85909 3 Post-treatment of the connector or wire bonding area
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H01L2224/8591 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/85911 5 Chemical cleaning, e.g. etching, flux
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H01L2224/85912 5 Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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H01L2224/85913 5 Plasma cleaning
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H01L2224/85914 5 Thermal cleaning, e.g. using laser ablation or by electrostatic corona discharge
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H01L2224/85916 6 using a laser
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H01L2224/85917 5 Electron beam cleaning
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H01L2224/85919 5 Combinations of two or more cleaning methods provided for in at least two different groups from H01L2224/8591 - H01L2224/85914
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H01L2224/8592 4 Applying permanent coating, e.g. protective coating
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H01L2224/8593 4 Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
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H01L2224/85931 5 by chemical means, e.g. etching
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H01L2224/85935 5 by heating means, e.g. reflowing
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H01L2224/85937 6 using a polychromatic heating lamp
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H01L2224/85939 6 using a laser
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H01L2224/85941 6 Induction heating, i.e. eddy currents
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H01L2224/85943 6 using a flame torch, e.g. hydrogen torch
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H01L2224/85945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/85947 5 by mechanical means, e.g. "pull-and-cut", pressing, stamping
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H01L2224/85948 4 Thermal treatments, e.g. annealing, controlled cooling
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H01L2224/85951 4 Forming additional members, e.g. for reinforcing
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H01L2224/85986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/86 2 using tape automated bonding [TAB]
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H01L2224/86001 3 involving a temporary auxiliary member not forming part of the bonding apparatus
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H01L2224/86002 4 being a removable or sacrificial coating
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H01L2224/86005 4 being a temporary or sacrificial substrate
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H01L2224/86007 3 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the TAB connector during or after the bonding process
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H01L2224/86009 3 Pre-treatment of the connector or the bonding area
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H01L2224/8601 4 Cleaning, e.g. oxide removal step, desmearing
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H01L2224/8603 4 Reshaping
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H01L2224/86031 5 by chemical means, e.g. etching, anodisation
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H01L2224/86035 5 by heating
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H01L2224/86039 6 using a laser
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H01L2224/86045 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/86047 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/86048 4 Thermal treatment, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/86051 4 Forming additional members
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H01L2224/86053 3 Bonding environment
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H01L2224/86054 4 Composition of the atmosphere
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H01L2224/86085 4 being a liquid, e.g. fluidic self-assembly
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H01L2224/8609 4 Vacuum
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H01L2224/86091 4 Under pressure
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H01L2224/86095 4 Temperature settings
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H01L2224/86096 5 Transient conditions
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H01L2224/86097 6 Heating
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H01L2224/86098 6 Cooling
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H01L2224/86099 5 Ambient temperature
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H01L2224/861 3 the connector being supplied to the parts to be connected in the bonding apparatus
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H01L2224/8611 3 involving protection against electrical discharge, e.g. removing electrostatic charge
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H01L2224/8612 3 Aligning
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H01L2224/86121 4 Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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H01L2224/86122 5 by detecting inherent features of, or outside, the semiconductor or solid-state body
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H01L2224/8613 5 using marks formed on the semiconductor or solid-state body
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H01L2224/86132 5 using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
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H01L2224/86136 4 involving guiding structures, e.g. spacers or supporting members
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H01L2224/86138 5 the guiding structures being at least partially left in the finished device
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H01L2224/86143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/86148 4 involving movement of a part of the bonding apparatus
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H01L2224/86149 5 being the lower part of the bonding apparatus, i.e. holding means for the bodies to be connected, e.g. XY table
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H01L2224/8615 6 Rotational movements
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H01L2224/8616 6 Translational movements
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H01L2224/86169 5 being the upper part of the bonding apparatus, e.g. nozzle
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H01L2224/8617 6 Rotational movement
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H01L2224/8618 6 Translational movements
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H01L2224/86181 7 connecting first on the semiconductor or solid-state body, i.e. on-chip,
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H01L2224/86186 7 connecting first outside the semiconductor or solid-state body, i.e. off-chip
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H01L2224/86191 7 connecting first both on and outside the semiconductor or solid-state body
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H01L2224/862 3 Applying energy for connecting
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H01L2224/86201 4 Compression bonding
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H01L2224/86203 5 Thermo-compression bonding
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H01L2224/86205 5 Ultrasonic bonding
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H01L2224/86207 6 Thermosonic bonding
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H01L2224/8621 4 with energy being in the form of electromagnetic radiation
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H01L2224/86212 5 Induction heating, i.e. eddy currents
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H01L2224/86214 5 using a laser
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H01L2224/8623 5 Polychromatic or infrared lamp heating
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H01L2224/86232 5 using an autocatalytic reaction, e.g. exothermic brazing
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H01L2224/86234 5 using means for applying energy being within the device, e.g. integrated heater
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H01L2224/86236 5 using electro-static corona discharge
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H01L2224/86237 5 using electron beam (electron beam in general B23K15/00)
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H01L2224/86238 5 using electric resistance welding, i.e. ohmic heating
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H01L2224/8634 3 Bonding interfaces of the connector
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H01L2224/86345 4 Shape, e.g. interlocking features
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H01L2224/86355 4 having an external coating, e.g. protective bond-through coating
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H01L2224/86359 4 Material
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H01L2224/8636 3 Bonding interfaces of the semiconductor or solid state body
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H01L2224/86365 4 Shape, e.g. interlocking features
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H01L2224/86375 4 having an external coating, e.g. protective bond-through coating
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H01L2224/86379 4 Material
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H01L2224/8638 3 Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/86385 4 Shape, e.g. interlocking features
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H01L2224/86395 4 having an external coating, e.g. protective bond-through coating
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H01L2224/86399 4 Material
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H01L2224/868 3 Bonding techniques
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H01L2224/86801 4 Soldering or alloying
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H01L2224/86805 5 involving forming a eutectic alloy at the bonding interface
|
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|
|
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|
H01L2224/8681 5 involving forming an intermetallic compound at the bonding interface
|
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|
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H01L2224/86815 5 Reflow soldering
|
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H01L2224/8682 5 Diffusion bonding
|
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H01L2224/86825 6 Solid-liquid interdiffusion
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H01L2224/8683 6 Solid-solid interdiffusion
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H01L2224/8684 4 Sintering
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|
H01L2224/8685 4 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
|
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H01L2224/86855 5 Hardening the adhesive by curing, i.e. thermosetting
|
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H01L2224/86856 6 Pre-cured adhesive, i.e. B-stage adhesive
|
|
|
|
|
|
H01L2224/86859 6 Localised curing of parts of the connector
|
|
|
|
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|
H01L2224/86862 6 Heat curing
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H01L2224/86865 6 Microwave curing
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H01L2224/86868 6 Infrared [IR] curing
|
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H01L2224/86871 6 Visible light curing
|
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H01L2224/86874 6 Ultraviolet [UV] curing
|
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H01L2224/86877 6 Moisture curing, i.e. curing by exposing to humidity, e.g. for silicones and polyurethanes
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H01L2224/8688 5 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
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|
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|
H01L2224/86885 5 Combinations of two or more hardening methods provided for in at least two different groups selected from H01L2224/86855 - H01L2224/8688, e.g. hybrid thermoplastic-thermosetting adhesives
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|
H01L2224/8689 4 using an inorganic non metallic glass type adhesive, e.g. solder glass
|
|
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H01L2224/86893 4 Anodic bonding, i.e. bonding by applying a voltage across the interface in order to induce ions migration leading to an irreversible chemical bond
|
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H01L2224/86895 4 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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H01L2224/86896 5 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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H01L2224/86897 5 between electrically insulating surfaces, e.g. oxide or nitride layers
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H01L2224/86899 4 Combinations of bonding methods provided for in at least two different groups from H01L2224/868 - H01L2224/86897
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H01L2224/869 3 involving monitoring, e.g. feedback loop
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H01L2224/86909 3 Post-treatment of the connector or the bonding area
|
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|
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H01L2224/8691 4 Cleaning, e.g. oxide removal step, desmearing
|
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H01L2224/8693 4 Reshaping
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|
H01L2224/86931 5 by chemical means, e.g. etching, anodisation
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H01L2224/86935 5 by heating means
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H01L2224/86939 6 using a laser
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H01L2224/86945 6 using a corona discharge, e.g. electronic flame off [EFO]
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H01L2224/86947 5 by mechanical means, e.g. severing, pressing, stamping
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H01L2224/86948 4 Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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H01L2224/86951 4 Forming additional members
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H01L2224/86986 3 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
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H01L2224/89 2 using at least one connector not provided for in any of the groups H01L2224/81 - H01L2224/86
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H01L2224/90 1 Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
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H01L2224/91 1 Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
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H01L2224/92 2 Specific sequence of method steps
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H01L2224/9201 3 Forming connectors during the connecting process, e.g. in-situ formation of bumps
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H01L2224/9202 3 Forming additional connectors after the connecting process
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H01L2224/9205 3 Intermediate bonding steps, i.e. partial connection of the semiconductor or solid-state body during the connecting process
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H01L2224/921 3 Connecting a surface with connectors of different types
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H01L2224/9211 4 Parallel connecting processes
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H01L2224/9212 4 Sequential connecting processes
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H01L2224/92122 5 the first connecting process involving a bump connector
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H01L2224/92132 5 the first connecting process involving a build-up interconnect
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H01L2224/92133 6 the second connecting process involving a bump connector
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H01L2224/92136 6 the second connecting process involving a strap connector
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H01L2224/92143 6 the second connecting process involving a bump connector
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H01L2224/92152 5 the first connecting process involving a strap connector
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H01L2224/92153 6 the second connecting process involving a bump connector
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H01L2224/92157 6 the second connecting process involving a wire connector
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H01L2224/92158 6 the second connecting process involving a TAB connector
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H01L2224/92162 5 the first connecting process involving a wire connector
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H01L2224/92163 6 the second connecting process involving a bump connector
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H01L2224/92165 6 the second connecting process involving a layer connector
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H01L2224/92166 6 the second connecting process involving a strap connector
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H01L2224/92172 5 the first connecting process involving a TAB connector
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H01L2224/92173 6 the second connecting process involving a bump connector
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H01L2224/92174 6 the second connecting process involving a build-up interconnect
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H01L2224/92175 6 the second connecting process involving a layer connector
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H01L2224/92176 6 the second connecting process involving a strap connector
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H01L2224/92177 6 the second connecting process involving a wire connector
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H01L2224/922 3 Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
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H01L2224/9221 4 Parallel connecting processes
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H01L2224/9222 4 Sequential connecting processes
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H01L2224/92222 5 the first connecting process involving a bump connector
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H01L2224/92224 6 the second connecting process involving a build-up interconnect
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H01L2224/92225 6 the second connecting process involving a layer connector
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H01L2224/92226 6 the second connecting process involving a strap connector
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H01L2224/92227 6 the second connecting process involving a wire connector
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H01L2224/92228 6 the second connecting process involving a TAB connector
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H01L2224/92242 5 the first connecting process involving a layer connector
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H01L2224/92244 6 the second connecting process involving a build-up interconnect
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H01L2224/92246 6 the second connecting process involving a strap connector
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H01L2224/92247 6 the second connecting process involving a wire connector
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H01L2224/92248 6 the second connecting process involving a TAB connector
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H01L2224/92252 5 the first connecting process involving a strap connector
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H01L2224/92253 6 the second connecting process involving a bump connector
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H01L2224/92255 6 the second connecting process involving a layer connector
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H01L2224/93 1 Batch processes
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H01L2224/94 2 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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H01L2224/95 2 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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H01L2224/95001 3 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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H01L2224/95053 3 Bonding environment
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H01L2224/95085 4 being a liquid, e.g. for fluidic self-assembly
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H01L2224/95091 4 Under pressure
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H01L2224/95092 5 Atmospheric pressure, e.g. dry self-assembly
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H01L2224/95093 5 Transient conditions, e.g. assisted by a gas flow or a liquid flow
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H01L2224/951 3 Supplying the plurality of semiconductor or solid-state bodies
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H01L2224/95101 4 in a liquid medium
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H01L2224/95102 5 being a colloidal droplet
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H01L2224/9511 4 using a rack or rail
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H01L2224/95115 4 using a roll-to-roll transfer technique
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H01L2224/9512 3 Aligning the plurality of semiconductor or solid-state bodies
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H01L2224/95121 4 Active alignment, i.e. by apparatus steering
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H01L2224/95122 5 by applying vibration
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H01L2224/95123 5 by applying a pressurised fluid flow, e.g. liquid or gas flow
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H01L2224/95133 5 by applying an electromagnetic field
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H01L2224/95134 6 Electrowetting, i.e. by changing the surface energy of a droplet
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H01L2224/95136 4 involving guiding structures, e.g. shape matching, spacers or supporting members
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H01L2224/95143 4 Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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H01L2224/95144 5 Magnetic alignment, i.e. using permanent magnetic parts in the semiconductor or solid-state body
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H01L2224/95145 5 Electrostatic alignment, i.e. polarity alignment with Coulomb charges
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H01L2224/95146 5 by surface tension
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H01L2224/95147 5 by molecular lock-key, e.g. by DNA
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H01L2224/95148 4 involving movement of a part of the bonding apparatus
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H01L2224/96 3 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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H01L2224/97 3 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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H01L2224/98 1 Methods for disconnecting semiconductor or solid-state bodies
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H01L2225/00 0 Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
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H01L2225/03 1 All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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H01L2225/04 2 the devices not having separate containers
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H01L2225/065 3 the devices being of a type provided for in group H01L27/00
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H01L2225/06503 4 Stacked arrangements of devices
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H01L2225/06506 5 Wire or wire-like electrical connections between devices
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H01L2225/0651 5 Wire or wire-like electrical connections from device to substrate
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H01L2225/06513 5 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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H01L2225/06517 5 Bump or bump-like direct electrical connections from device to substrate
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H01L2225/0652 5 Bump or bump-like direct electrical connections from substrate to substrate
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H01L2225/06524 5 Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
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H01L2225/06527 5 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
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H01L2225/06531 6 Non-galvanic coupling, e.g. capacitive coupling
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H01L2225/06534 7 Optical coupling
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H01L2225/06537 6 Electromagnetic shielding
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H01L2225/06541 5 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] (manufacturing via connections per se H01L21/76898)
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H01L2225/06544 6 Design considerations for via connections, e.g. geometry or layout
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H01L2225/06548 5 Conductive via connections through the substrate, container, or encapsulation
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H01L2225/06551 5 Conductive connections on the side of the device
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H01L2225/06555 5 Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
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H01L2225/06558 6 the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement
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H01L2225/06562 6 at least one device in the stack being rotated or offset
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H01L2225/06565 6 the devices having the same size and there being no auxiliary carrier between the devices
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H01L2225/06568 6 the devices decreasing in size, e.g. pyramidical stack
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H01L2225/06572 5 Auxiliary carrier between devices, the carrier having an electrical connection structure
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H01L2225/06575 5 Auxiliary carrier between devices, the carrier having no electrical connection structure
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H01L2225/06579 5 TAB carriers; beam leads
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H01L2225/06582 5 Housing for the assembly, e.g. chip scale package [CSP]
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H01L2225/06586 6 Housing with external bump or bump-like connectors
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H01L2225/06589 5 Thermal management, e.g. cooling
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H01L2225/06593 5 Mounting aids permanently on device; arrangements for alignment (use of temporary supports H01L21/6835)
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H01L2225/06596 5 Structural arrangements for testing (testing or measuring during manufacture or treatment H01L22/00; testing electrical properties or locating electrical faults G01R31/00)
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H01L2225/10 2 the devices having separate containers
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H01L2225/1005 3 the devices being of a type provided for in group H01L27/00
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H01L2225/1011 4 the containers being in a stacked arrangement
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H01L2225/1017 5 the lowermost container comprising a device support
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H01L2225/1023 6 the support being an insulating substrate
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H01L2225/1029 6 the support being a lead frame
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H01L2225/1035 6 the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
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H01L2225/1041 5 Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
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H01L2225/1047 5 Details of electrical connections between containers
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H01L2225/1052 6 Wire or wire-like electrical connections
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H01L2225/1058 6 Bump or bump-like electrical connections, e.g. balls, pillars, posts
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H01L2225/1064 6 Electrical connections provided on a side surface of one or more of the containers
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H01L2225/107 6 Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB (printed circuits H05K1/00)
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H01L2225/1076 5 Shape of the containers
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H01L2225/1082 6 for improving alignment between containers, e.g. interlocking features
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H01L2225/1088 6 Arrangements to limit the height of the assembly
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H01L2225/1094 5 Thermal management, e.g. cooling
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H01L2229/00 0 Indexing scheme for semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, for details of semiconductor bodies or of electrodes thereof, or for multistep manufacturing processes therefor
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H01L2924/00 0 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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H01L2924/0001 1 Technical content checked by a classifier
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H01L2924/00011 2 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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H01L2924/00012 2 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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H01L2924/00013 2 Fully indexed content
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H01L2924/00014 2 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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H01L2924/00015 2 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
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H01L2924/0002 2 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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H01L2924/01 1 Chemical elements
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H01L2924/01001 2 Hydrogen [H]
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H01L2924/01002 2 Helium [He]
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H01L2924/01003 2 Lithium [Li]
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H01L2924/01004 2 Beryllium [Be]
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H01L2924/01005 2 Boron [B]
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H01L2924/01006 2 Carbon [C]
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H01L2924/01007 2 Nitrogen [N]
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H01L2924/01008 2 Oxygen [O]
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H01L2924/01009 2 Fluorine [F]
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H01L2924/0101 2 Neon [Ne]
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H01L2924/01011 2 Sodium [Na]
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H01L2924/01012 2 Magnesium [Mg]
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H01L2924/01013 2 Aluminum [Al]
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H01L2924/01014 2 Silicon [Si]
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H01L2924/01015 2 Phosphorus [P]
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H01L2924/01016 2 Sulfur [S]
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H01L2924/01017 2 Chlorine [Cl]
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H01L2924/01018 2 Argon [Ar]
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H01L2924/01019 2 Potassium [K]
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H01L2924/0102 2 Calcium [Ca]
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H01L2924/01021 2 Scandium [Sc]
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H01L2924/01022 2 Titanium [Ti]
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H01L2924/01023 2 Vanadium [V]
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H01L2924/01024 2 Chromium [Cr]
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H01L2924/01025 2 Manganese [Mn]
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H01L2924/01026 2 Iron [Fe]
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H01L2924/01027 2 Cobalt [Co]
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H01L2924/01028 2 Nickel [Ni]
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H01L2924/01029 2 Copper [Cu]
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H01L2924/0103 2 Zinc [Zn]
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H01L2924/01031 2 Gallium [Ga]
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H01L2924/01032 2 Germanium [Ge]
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H01L2924/01033 2 Arsenic [As]
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H01L2924/01034 2 Selenium [Se]
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H01L2924/01035 2 Bromine [Br]
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H01L2924/01036 2 Krypton [Kr]
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H01L2924/01037 2 Rubidium [Rb]
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H01L2924/01038 2 Strontium [Sr]
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H01L2924/01039 2 Yttrium [Y]
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H01L2924/0104 2 Zirconium [Zr]
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H01L2924/01041 2 Niobium [Nb]
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H01L2924/01042 2 Molybdenum [Mo]
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H01L2924/01043 2 Technetium [Tc]
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H01L2924/01044 2 Ruthenium [Ru]
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H01L2924/01045 2 Rhodium [Rh]
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H01L2924/01046 2 Palladium [Pd]
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H01L2924/01047 2 Silver [Ag]
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H01L2924/01048 2 Cadmium [Cd]
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H01L2924/01049 2 Indium [In]
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H01L2924/0105 2 Tin [Sn]
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H01L2924/01051 2 Antimony [Sb]
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H01L2924/01052 2 Tellurium [Te]
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H01L2924/01053 2 Iodine [I]
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H01L2924/01054 2 Xenon [Xe]
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H01L2924/01055 2 Cesium [Cs]
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H01L2924/01056 2 Barium [Ba]
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H01L2924/01057 2 Lanthanum [La]
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H01L2924/01058 2 Cerium [Ce]
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H01L2924/01059 2 Praseodymium [Pr]
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H01L2924/0106 2 Neodymium [Nd]
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H01L2924/01061 2 Promethium [Pm]
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H01L2924/01062 2 Samarium [Sm]
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H01L2924/01063 2 Europium [Eu]
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H01L2924/01064 2 Gadolinium [Gd]
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H01L2924/01065 2 Terbium [Tb]
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H01L2924/01066 2 Dysprosium [Dy]
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H01L2924/01067 2 Holmium [Ho]
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H01L2924/01068 2 Erbium [Er]
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H01L2924/01069 2 Thulium [Tm]
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H01L2924/0107 2 Ytterbium [Yb]
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H01L2924/01071 2 Lutetium [Lu]
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H01L2924/01072 2 Hafnium [Hf]
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H01L2924/01073 2 Tantalum [Ta]
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H01L2924/01074 2 Tungsten [W]
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H01L2924/01075 2 Rhenium [Re]
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H01L2924/01076 2 Osmium [Os]
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H01L2924/01077 2 Iridium [Ir]
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H01L2924/01078 2 Platinum [Pt]
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H01L2924/01079 2 Gold [Au]
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H01L2924/0108 2 Mercury [Hg]
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H01L2924/01081 2 Thallium [Tl]
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H01L2924/01082 2 Lead [Pb]
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H01L2924/01083 2 Bismuth [Bi]
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H01L2924/01084 2 Polonium [Po]
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H01L2924/01085 2 Astatine [At]
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H01L2924/01086 2 Radon [Rn]
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H01L2924/01087 2 Francium [Fr]
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H01L2924/01088 2 Radium [Ra]
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H01L2924/01089 2 Actinium [Ac]
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H01L2924/0109 2 Thorium [Th]
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H01L2924/01091 2 Protactinium [Pa]
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H01L2924/01092 2 Uranium [U]
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H01L2924/01093 2 Neptunium [Np]
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H01L2924/01094 2 Plutonium [Pu]
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H01L2924/011 1 Groups of the periodic table
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H01L2924/01101 2 Alkali metals
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H01L2924/01102 2 Alkali earth metals
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H01L2924/01103 2 Transition metals
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H01L2924/01104 2 Refractory metals
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H01L2924/01105 2 Rare earth metals
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H01L2924/01106 3 Lanthanides, i.e. Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu
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H01L2924/01107 3 Actinides, i.e. Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr
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H01L2924/01108 2 Noble metals
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H01L2924/01109 2 Metalloids or Semi-metals
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H01L2924/0111 2 Chalcogens
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H01L2924/01111 2 Halogens
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H01L2924/01112 2 Noble gases
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H01L2924/012 1 Semiconductor purity grades
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H01L2924/01201 2 1N purity grades, i.e. 90%
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H01L2924/01202 2 2N purity grades, i.e. 99%
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H01L2924/01203 2 3N purity grades, i.e. 99.9%
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H01L2924/01204 2 4N purity grades, i.e. 99.99%
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H01L2924/01205 2 5N purity grades, i.e. 99.999%
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H01L2924/01206 2 6N purity grades, i.e. 99.9999%
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H01L2924/01207 2 7N purity grades, i.e. 99.99999%
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H01L2924/01208 2 8N purity grades, i.e. 99.999999%
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H01L2924/013 1 Alloys
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H01L2924/0132 2 Binary Alloys
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H01L2924/01321 3 Isomorphous Alloys
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H01L2924/01322 3 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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H01L2924/01323 4 Hypoeutectic alloys i.e. with compositions lying to the left of the eutectic point
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H01L2924/01324 4 Hypereutectic alloys i.e. with compositions lying to the right of the eutectic point
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H01L2924/01325 3 Peritectic Alloys, i.e. obtained by a liquid and a solid transforming into a new and different solid phase
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H01L2924/01326 3 Monotectics, i.e. obtained by a liquid transforming into a solid and a new and different liquid phase
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H01L2924/01327 3 Intermediate phases, i.e. intermetallics compounds
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H01L2924/0133 2 Ternary Alloys
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H01L2924/0134 2 Quaternary Alloys
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H01L2924/0135 2 Quinary Alloys
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H01L2924/014 2 Solder alloys
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H01L2924/01402 2 Invar, i.e. single-phase alloy of around 36% nickel and 64% iron
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H01L2924/01403 2 Kovar, i.e. FeNiCo alloys
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H01L2924/01404 2 Alloy 42, i.e. FeNi42
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H01L2924/01405 2 Inovco, i.e. Fe-33Ni-4.5Co
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H01L2924/042 1 Borides composed of metals from groups of the periodic table
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H01L2924/0421 2 1st Group
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H01L2924/0422 2 2nd Group
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H01L2924/0423 2 3rd Group
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H01L2924/0426 2 6th Group
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H01L2924/0427 2 7th Group
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H01L2924/0428 2 8th Group
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H01L2924/0429 2 9th Group
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H01L2924/044 2 10th Group
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H01L2924/0441 2 11th Group
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H01L2924/0442 2 12th Group
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H01L2924/0443 2 13th Group
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H01L2924/0444 2 14th Group
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H01L2924/0445 2 Lanthanides
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H01L2924/0446 2 Actinides
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H01L2924/0449 2 being a combination of two or more materials provided in the groups H01L2924/0421 - H01L2924/0446
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H01L2924/04491 2 having a monocrystalline microstructure
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H01L2924/04492 2 having a polycrystalline microstructure
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H01L2924/04494 2 having an amorphous microstructure, i.e. glass
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H01L2924/045 1 Carbides composed of metals from groups of the periodic table
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H01L2924/0451 2 1st Group
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H01L2924/0452 2 2nd Group
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H01L2924/0453 2 3rd Group
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H01L2924/0454 2 4th Group
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H01L2924/04541 3 TiC
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H01L2924/0455 2 5th Group
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H01L2924/0456 2 6th Group
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H01L2924/04563 3 WC
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H01L2924/0457 2 7th Group
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H01L2924/0458 2 8th Group
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H01L2924/046 2 10th Group
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H01L2924/0461 2 11th Group
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H01L2924/0462 2 12th Group
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H01L2924/0464 2 14th Group
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H01L2924/04642 3 SiC
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H01L2924/0465 2 Lanthanides
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H01L2924/0466 2 Actinides
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H01L2924/0469 2 being a combination of two or more materials provided in the groups H01L2924/0451 - H01L2924/0466
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H01L2924/04691 2 having a monocrystalline microstructure
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H01L2924/04692 2 having a polycrystalline microstructure
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H01L2924/04694 2 having an amorphous microstructure, i.e. glass
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H01L2924/047 1 Silicides composed of metals from groups of the periodic table
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H01L2924/0471 2 1st Group
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H01L2924/0472 2 2nd Group
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H01L2924/0473 2 3rd Group
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H01L2924/048 2 10th Group
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H01L2924/0481 2 11th Group
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H01L2924/0482 2 12th Group
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H01L2924/0484 2 14th Group
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H01L2924/0485 2 Lanthanides
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H01L2924/0486 2 Actinides
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H01L2924/04891 2 having a monocrystalline microstructure
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H01L2924/04892 2 having a polycrystalline microstructure
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H01L2924/04894 2 having an amorphous microstructure, i.e. glass
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H01L2924/049 1 Nitrides composed of metals from groups of the periodic table
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H01L2924/0491 2 1st Group
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H01L2924/0492 2 2nd Group
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H01L2924/0493 2 3rd Group
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H01L2924/0494 2 4th Group
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H01L2924/04941 3 TiN
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H01L2924/0495 2 5th Group
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H01L2924/04953 3 TaN
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H01L2924/0496 2 6th Group
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H01L2924/0497 2 7th Group
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H01L2924/05 2 10th Group
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H01L2924/0501 2 11th Group
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H01L2924/0502 2 12th Group
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H01L2924/0503 2 13th Group
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H01L2924/05032 3 AlN
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H01L2924/0504 2 14th Group
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H01L2924/05042 3 Si3N4
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H01L2924/0505 2 Lanthanides
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H01L2924/0506 2 Actinides
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H01L2924/0509 2 being a combination of two or more materials provided in the groups H01L2924/0491 - H01L2924/0506
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H01L2924/05091 2 having a monocrystalline microstructure
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H01L2924/05092 2 having a polycrystalline microstructure
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H01L2924/05094 2 having an amorphous microstructure, i.e. glass
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H01L2924/051 1 Phosphides composed of metals from groups of the periodic table
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H01L2924/0511 2 1st Group
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H01L2924/0512 2 2nd Group
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H01L2924/0525 2 Lanthanides
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H01L2924/0526 2 Actinides
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H01L2924/05291 2 having a monocrystalline microstructure
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H01L2924/05292 2 having a polycrystalline microstructure
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H01L2924/05294 2 having an amorphous microstructure, i.e. glass
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H01L2924/053 1 Oxides composed of metals from groups of the periodic table
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H01L2924/05341 3 TiO2
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H01L2924/05342 3 ZrO2
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H01L2924/05381 3 FeOx
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H01L2924/05432 3 Al2O3
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H01L2924/0546 2 Actinides
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H01L2924/05491 2 having a monocrystalline microstructure
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H01L2924/05492 2 having a polycrystalline microstructure
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H01L2924/05494 2 having an amorphous microstructure, i.e. glass
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H01L2924/055 1 Chalcogenides other than oxygen i.e. sulfides, selenides and tellurides composed of metals from groups of the periodic table
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H01L2924/0551 2 1st Group
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H01L2924/0564 2 14th Group
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H01L2924/0565 2 Lanthanides
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H01L2924/0566 2 Actinides
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H01L2924/0569 2 being a combination of two or more materials provided in the groups H01L2924/0551 - H01L2924/0566
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H01L2924/05691 2 having a monocrystalline microstructure
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H01L2924/05692 2 having a polycrystalline microstructure
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H01L2924/05694 2 having an amorphous microstructure, i.e. glass
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H01L2924/057 1 Halides composed of metals from groups of the periodic table
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H01L2924/0571 2 1st Group
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H01L2924/0572 2 2nd Group
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H01L2924/0573 2 3rd Group
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H01L2924/0574 2 4th Group
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H01L2924/0575 2 5th Group
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H01L2924/0576 2 6th Group
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H01L2924/0577 2 7th Group
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H01L2924/0578 2 8th Group
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H01L2924/0579 2 9th Group
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H01L2924/058 2 10th Group
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H01L2924/0581 2 11th Group
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H01L2924/0582 2 12th Group
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H01L2924/0583 2 13th Group
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H01L2924/0584 2 14th Group
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H01L2924/0585 2 Lanthanides
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H01L2924/0586 2 Actinides
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H01L2924/0589 2 being a combination of two or more materials provided in the groups H01L2924/0571 - H01L2924/0586
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H01L2924/05891 2 having a monocrystalline microstructure
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H01L2924/05892 2 having a polycrystalline microstructure
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H01L2924/05894 2 having an amorphous microstructure, i.e. glass
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H01L2924/059 1 Being combinations of any of the materials from the groups H01L2924/042 - H01L2924/0584, e.g. oxynitrides
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H01L2924/05991 2 having a monocrystalline microstructure
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H01L2924/05992 2 having a polycrystalline microstructure
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H01L2924/05994 2 having an amorphous microstructure, i.e. glass
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H01L2924/06 1 Polymers (polymers per se C08; polymer adhesives C09J)
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H01L2924/061 2 Polyolefin polymer
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H01L2924/0615 2 Styrenic polymer
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H01L2924/062 2 Halogenated polymer
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H01L2924/0625 2 Polyvinyl alchohol
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H01L2924/063 2 Polyvinyl acetate
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H01L2924/0635 2 Acrylic polymer
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H01L2924/064 2 Graft polymer
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H01L2924/0645 2 Block copolymer
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H01L2924/065 2 ABS
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H01L2924/0655 2 Polyacetal
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H01L2924/066 2 Phenolic resin
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H01L2924/0665 2 Epoxy resin
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H01L2924/067 2 Polyphenylene
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H01L2924/0675 2 Polyester
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H01L2924/068 2 Polycarbonate
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H01L2924/0685 2 Polyether
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H01L2924/069 2 Polyurethane
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H01L2924/0695 2 Polyamide
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H01L2924/07 2 Polyamine or polyimide
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H01L2924/07001 3 Polyamine
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H01L2924/07025 3 Polyimide
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H01L2924/0705 2 Sulfur containing polymer
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H01L2924/0715 2 Polysiloxane
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H01L2924/078 2 Adhesive characteristics other than chemical
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H01L2924/07802 3 not being an ohmic electrical conductor
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H01L2924/0781 3 being an ohmic electrical conductor
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H01L2924/07811 4 Extrinsic, i.e. with electrical conductive fillers
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H01L2924/07812 4 Intrinsic, e.g. polyaniline [PANI]
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H01L2924/0782 3 being pressure sensitive
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H01L2924/095 1 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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H01L2924/0951 2 Glass epoxy laminates
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H01L2924/09511 3 FR-4
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H01L2924/09512 3 FR-5
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H01L2924/09522 3 G10
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H01L2924/09523 3 G11
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H01L2924/096 2 Cermets, i.e. composite material composed of ceramic and metallic materials
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H01L2924/097 2 Glass-ceramics, e.g. devitrified glass
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H01L2924/09701 3 Low temperature co-fired ceramic [LTCC]
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H01L2924/10 1 Details of semiconductor or other solid state devices to be connected
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H01L2924/1011 2 Structure
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H01L2924/1015 2 Shape
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H01L2924/10155 3 being other than a cuboid
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H01L2924/10156 4 at the periphery
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H01L2924/10157 4 at the active surface
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H01L2924/10158 4 at the passive surface
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H01L2924/1016 3 being a cuboid
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H01L2924/10161 4 with a rectangular active surface
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H01L2924/10162 4 with a square active surface
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H01L2924/1017 3 being a sphere
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H01L2924/102 2 Material of the semiconductor or solid state bodies
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H01L2924/1025 3 Semiconducting materials
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H01L2924/10251 4 Elemental semiconductors, i.e. Group IV
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H01L2924/10252 5 Germanium [Ge]
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H01L2924/10253 5 Silicon [Si]
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H01L2924/10254 5 Diamond [C]
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H01L2924/1026 4 Compound semiconductors
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H01L2924/1027 5 IV
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H01L2924/10271 6 Silicon-germanium [SiGe]
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H01L2924/10272 6 Silicon Carbide [SiC]
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H01L2924/1032 5 III-V
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H01L2924/10321 6 Aluminium antimonide [AlSb]
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H01L2924/10322 6 Aluminium arsenide [AlAs]
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H01L2924/10323 6 Aluminium nitride [AlN]
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H01L2924/10324 6 Aluminium phosphide [AlP]
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H01L2924/10325 6 Boron nitride [BN], e.g. cubic, hexagonal, nanotube
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H01L2924/10326 6 Boron phosphide [BP]
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H01L2924/10327 6 Boron arsenide [BAs, B12As2]
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H01L2924/10328 6 Gallium antimonide [GaSb]
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H01L2924/10329 6 Gallium arsenide [GaAs]
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H01L2924/1033 6 Gallium nitride [GaN]
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H01L2924/10331 6 Gallium phosphide [GaP]
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H01L2924/10332 6 Indium antimonide [InSb]
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H01L2924/10333 6 Indium arsenide [InAs]
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H01L2924/10334 6 Indium nitride [InN]
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H01L2924/10335 6 Indium phosphide [InP]
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H01L2924/10336 6 Aluminium gallium arsenide [AlGaAs]
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H01L2924/10337 6 Indium gallium arsenide [InGaAs]
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H01L2924/10338 6 Indium gallium phosphide [InGaP]
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H01L2924/10339 6 Aluminium indium arsenide [AlInAs]
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H01L2924/1034 6 Aluminium indium antimonide [AlInSb]
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H01L2924/10341 6 Gallium arsenide nitride [GaAsN]
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H01L2924/10342 6 Gallium arsenide phosphide [GaAsP]
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H01L2924/10343 6 Gallium arsenide antimonide [GaAsSb]
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H01L2924/10344 6 Aluminium gallium nitride [AlGaN]
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H01L2924/10345 6 Aluminium gallium phosphide [AlGaP]
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H01L2924/10346 6 Indium gallium nitride [InGaN]
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H01L2924/10347 6 Indium arsenide antimonide [InAsSb]
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H01L2924/10348 6 Indium gallium antimonide [InGaSb]
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H01L2924/10349 6 Aluminium gallium indium phosphide [AlGaInP]
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H01L2924/1035 6 Aluminium gallium arsenide phosphide [AlGaInP]
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H01L2924/10351 6 Indium gallium arsenide phosphide [InGaAsP]
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H01L2924/10352 6 Indium gallium arsenide antimonide [InGaAsSb]
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H01L2924/10353 6 Indium arsenide antimonide phosphide [InAsSbP]
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H01L2924/10354 6 Aluminium indium arsenide phosphide [AlInAsP]
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H01L2924/10355 6 Aluminium gallium arsenide nitride [AlGaAsN]
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H01L2924/10356 6 Indium gallium arsenide nitride [InGaAsN]
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H01L2924/10357 6 Indium aluminium arsenide nitride [InAlAsN]
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H01L2924/10358 6 Gallium arsenide antimonide nitride [GaAsSbN]
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H01L2924/10359 6 Gallium indium nitride arsenide antimonide [GaInNAsSb]
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H01L2924/1036 6 Gallium indium arsenide antimonide phosphide [GaInAsSbP]
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H01L2924/1037 5 II-VI
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H01L2924/10371 6 Cadmium selenide [CdSe]
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H01L2924/10372 6 Cadmium sulfide [CdS]
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H01L2924/10373 6 Cadmium telluride [CdTe]
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H01L2924/10375 6 Zinc selenide [ZnSe]
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H01L2924/10376 6 Zinc sulfide [ZnS]
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H01L2924/10377 6 Zinc telluride [ZnTe]
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H01L2924/10378 6 Cadmium zinc telluride, i.e. CZT [CdZnTe]
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H01L2924/10379 6 Mercury cadmium telluride [HgZnTe]
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H01L2924/1038 6 Mercury zinc telluride [HgZnSe]
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H01L2924/10381 6 Mercury zinc selenide [HgZnSe]
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H01L2924/1042 5 I-VII
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H01L2924/10421 6 Cuprous chloride [CuCl]
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H01L2924/1047 5 I-VI
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H01L2924/10471 6 Copper sulfide [CuS]
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H01L2924/1052 5 IV-VI
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H01L2924/10521 6 Lead selenide [PbSe]
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H01L2924/10522 6 Lead(II)sulfide [PbS]
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H01L2924/10523 6 Lead telluride [PbTe]
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H01L2924/10524 6 Tin sulfide [SnS, SnS2]
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H01L2924/10525 6 Tin telluride [SnTe]
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H01L2924/10526 6 Lead tin telluride [PbSnTe]
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H01L2924/10527 6 Thallium tin telluride [Tl2SnTe5]
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H01L2924/10528 6 Thallium germanium telluride [Tl2GeTe5]
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H01L2924/1057 5 V-VI
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H01L2924/10571 6 Bismuth telluride [Bi2Te3]
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H01L2924/1062 5 II-V
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H01L2924/10621 6 Cadmium phosphide [Cd3P2]
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H01L2924/10622 6 Cadmium arsenide [Cd3As2]
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H01L2924/10623 6 Cadmium antimonide [Cd3Sb2]
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H01L2924/10624 6 Zinc phosphide [Zn3P2]
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H01L2924/10625 6 Zinc arsenide [Zn3As2]
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H01L2924/10626 6 Zinc antimonide [Zn3Sb2]
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H01L2924/1067 5 Oxide
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H01L2924/10671 6 Titanium dioxide, anatase, rutile, brookite [TiO2]
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H01L2924/10672 6 Copper(I)oxide [Cu2O]
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H01L2924/10673 6 Copper(II)oxide [CuO]
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H01L2924/10674 6 Uranium dioxide [UO2]
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H01L2924/10675 6 Uranium trioxide [UO3]
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H01L2924/10676 6 Bismuth trioxide [Bi2O3]
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H01L2924/10677 6 Tin dioxide [SnO2]
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H01L2924/10678 6 Barium titanate [BaTiO3]
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H01L2924/10679 6 Strontium titanate [SrTiO3]
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H01L2924/1068 6 Lithium niobate [LiNbO3]
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H01L2924/10681 6 Lanthanum copper oxide [La2CuO4]
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H01L2924/1072 5 Layered
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H01L2924/10721 6 Lead(II)iodide [PbI2]
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H01L2924/10722 6 Molybdenum disulfide [MoS2]
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H01L2924/10723 6 Gallium selenide [GaSe]
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H01L2924/10724 6 Tin sulfide [SnS]
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H01L2924/10725 6 Bismuth sulfide [Bi2S3]
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H01L2924/1077 5 Magnetic diluted [DMS]
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H01L2924/10771 6 Gallium manganese arsenide [GaMnAs]
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H01L2924/10772 6 Indium manganese arsenide [InMnAs]
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H01L2924/10773 6 Cadmium manganese telluride [CdMnTe]
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H01L2924/10774 6 Lead manganese telluride [PbMnTe]
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H01L2924/10775 6 Lanthanum calcium manganate [La0.7Ca0.3MnO3]
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H01L2924/10776 6 Iron(II)oxide [FeO]
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H01L2924/10777 6 Nickel(II)oxide [NiO]
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H01L2924/10778 6 Europium(II)oxide [EuO]
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H01L2924/10779 6 Europium(II)sulfide [EuS]
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H01L2924/1078 6 Chromium(III)bromide [CrBr3]
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H01L2924/1082 5 Other
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H01L2924/10821 6 Copper indium gallium selenide, CIGS [Cu[In,Ga]Se2]
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H01L2924/10822 6 Copper zinc tin sulfide, CZTS [Cu2ZnSnS4]
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H01L2924/10823 6 Copper indium selenide, CIS [CuInSe2]
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H01L2924/10824 6 Silver gallium sulfide [AgGaS2]
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H01L2924/10825 6 Zinc silicon phosphide [ZnSiP2]
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H01L2924/10826 6 Arsenic selenide [As2S3]
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H01L2924/10827 6 Platinum silicide [PtSi]
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H01L2924/10828 6 Bismuth(III)iodide [BiI3]
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H01L2924/10829 6 Mercury(II)iodide [HgI2]
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H01L2924/1083 6 Thallium(I)bromide [TlBr]
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H01L2924/10831 6 Selenium [Se]
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H01L2924/10832 6 Silver sulfide [Ag2S]
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H01L2924/10833 6 Iron disulfide [FeS2]
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H01L2924/11 2 Device type
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H01L2924/12 3 Passive devices, e.g. 2 terminal devices
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H01L2924/1203 4 Rectifying Diode
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H01L2924/12031 5 PIN diode
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H01L2924/12032 5 Schottky diode
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H01L2924/12033 5 Gunn diode
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H01L2924/12034 5 Varactor
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H01L2924/12035 5 Zener diode
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H01L2924/12036 5 PN diode
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H01L2924/12037 5 Cat's whisker diode
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H01L2924/12038 5 Point contact
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H01L2924/1204 4 Optical Diode
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H01L2924/12041 5 LED
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H01L2924/12042 5 LASER
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H01L2924/12043 5 Photo diode
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H01L2924/12044 5 OLED
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H01L2924/1205 4 Capacitor
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H01L2924/1206 4 Inductor
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H01L2924/1207 4 Resistor
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H01L2924/13 3 Discrete devices, e.g. 3 terminal devices
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H01L2924/1301 4 Thyristor
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H01L2924/13011 5 Anode Gate Thyristor [AGT]
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H01L2924/13013 5 Bidirectional Control Thyristor [BCT]
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H01L2924/13014 5 Breakover Diode [BOD]
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H01L2924/13015 5 DIAC - Bidirectional trigger device
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H01L2924/13016 5 Dynistor - Unidirectional switching device
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H01L2924/13017 5 Shockley diode - Unidirectional trigger and switching device
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H01L2924/13018 5 SIDAC - Bidirectional switching device
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H01L2924/13019 5 Trisil, SIDACtor - Bidirectional protection devices
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H01L2924/1302 5 GTO - Gate Turn-Off thyristor
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H01L2924/13021 6 DB-GTO - Distributed Buffer Gate Turn-Off thyristor
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H01L2924/13022 6 MA-GTO - Modified Anode Gate Turn-Off thyristor
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H01L2924/13023 5 IGCT - Integrated Gate Commutated Thyristor
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H01L2924/13024 5 LASCR - Light Activated SCR, or LTT - Light triggered thyristor
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H01L2924/13025 5 Light Activated Semiconducting Switch [LASS]
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H01L2924/13026 5 MCT - MOSFET Controlled Thyristor - It contains two additional FET structures for on/off control
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H01L2924/13027 5 BRT - Base Resistance Controlled Thyristor
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H01L2924/13028 5 RCT - Reverse Conducting Thyristor
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H01L2924/13029 5 PUT or PUJT - Programmable Unijunction Transistor - A thyristor with gate on n-type layer near to the anode used as a functional replacement for unijunction transistor
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H01L2924/1303 5 SCS - Silicon Controlled Switch or Thyristor Tetrode - A thyristor with both cathode and anode gates
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H01L2924/13032 5 SITh - Static Induction Thyristor, or FCTh - Field Controlled Thyristor - containing a gate structure that can shut down anode current flow
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H01L2924/13033 5 TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
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H01L2924/13034 5 Silicon Controlled Rectifier [SCR]
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H01L2924/13035 6 Asymmetrical SCR [ASCR]
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H01L2924/1304 4 Transistor
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H01L2924/1305 5 Bipolar Junction Transistor [BJT]
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H01L2924/13051 6 Heterojunction bipolar transistor [HBT]
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H01L2924/13052 6 Schottky transistor
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H01L2924/13053 6 Avalanche transistor
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H01L2924/13054 6 Darlington transistor
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H01L2924/13055 6 Insulated gate bipolar transistor [IGBT]
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H01L2924/13056 6 Photo transistor
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H01L2924/1306 5 Field-effect transistor [FET]
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H01L2924/13061 6 Carbon nanotube field-effect transistor [CNFET]
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H01L2924/13062 6 Junction field-effect transistor [JFET]
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H01L2924/13063 6 Metal-Semiconductor Field-Effect Transistor [MESFET]
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H01L2924/13064 6 High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
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H01L2924/13066 6 Inverted-T field effect transistor [ITFET]
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H01L2924/13067 6 FinFET, source/drain region shapes fins on the silicon surface
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H01L2924/13068 6 Fast-reverse epitaxial diode field-effect transistor [FREDFET]
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H01L2924/13069 6 Thin film transistor [TFT]
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H01L2924/1307 6 Organic Field-Effect Transistor [OFET]
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H01L2924/13071 6 Ballistic transistor
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H01L2924/13072 6 Sensor FET
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H01L2924/13073 7 ion-sensitive field-effect transistor [ISFET]
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H01L2924/13074 7 Electrolyte-oxide-semiconductor field effect transistor [EOSFET], e.g. Neurochip
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H01L2924/13075 7 Deoxyribonucleic acid field-effect transistor [DNAFET]
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H01L2924/13076 7 DEPFET
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H01L2924/13078 6 Unijunction transistors
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H01L2924/13079 6 Single-electron transistors [SET]
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H01L2924/1308 6 Nanofluidic transistor
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H01L2924/13081 6 Multigate devices
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H01L2924/13082 7 Tetrode transistor
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H01L2924/13083 7 Pentode transistor
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H01L2924/13084 7 Trigate transistor
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H01L2924/13085 7 Dual gate FETs
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H01L2924/13086 6 Junctionless Nanowire Transistor [JNT]
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H01L2924/13087 6 Vertical-Slit Field-Effect Transistor [VeSFET]
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H01L2924/13088 6 Graphene Nanoribbon Field-Effect Transistor [GNRFET]
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H01L2924/13089 6 Nanoparticle Organic Memory Field-Effect Transistor [NOMFET]
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H01L2924/1309 6 Modulation-Doped Field Effect Transistor [MODFET]
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H01L2924/13091 6 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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H01L2924/13092 7 Dual Gate Metal-Oxide-Semiconductor Field-Effect Transistor [DGMOSFET]
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H01L2924/14 3 Integrated circuits
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H01L2924/141 4 Analog devices
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H01L2924/142 5 HF devices
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H01L2924/1421 6 RF devices
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H01L2924/14211 7 Voltage-controlled oscillator [VCO]
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H01L2924/14215 7 Low-noise amplifier [LNA]
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H01L2924/1422 7 Mixer
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H01L2924/14221 8 Electronic mixer
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H01L2924/14222 8 Frequency mixer
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H01L2924/1423 5 Monolithic Microwave Integrated Circuit [MMIC]
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H01L2924/1424 5 Operational amplifier
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H01L2924/1425 5 Converter
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H01L2924/14251 6 Frequency converter
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H01L2924/14252 6 Voltage converter
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H01L2924/14253 6 Digital-to-analog converter [DAC]
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H01L2924/1426 5 Driver
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H01L2924/1427 5 Voltage regulator [VR]
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H01L2924/143 4 Digital devices
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H01L2924/1431 5 Logic devices
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H01L2924/1432 5 Central processing unit [CPU]
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H01L2924/1433 5 Application-specific integrated circuit [ASIC]
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H01L2924/14335 5 Digital signal processor [DSP]
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H01L2924/1434 5 Memory
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H01L2924/1435 6 Random access memory [RAM]
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H01L2924/1436 7 Dynamic random-access memory [DRAM]
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H01L2924/14361 8 Synchronous dynamic random access memory [SDRAM]
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H01L2924/14362 9 RAS Only Refresh [ROR]
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H01L2924/14363 9 CAS before RAS refresh [CBR]
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H01L2924/14364 8 Multibank DRAM [MDRAM]
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H01L2924/14365 8 Video DRAM [VRAM]
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H01L2924/14366 8 Window DRAM [WRAM]
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H01L2924/14367 8 Fast page mode DRAM [FPM DRAM]
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H01L2924/14368 8 Extended data out DRAM [EDO DRAM]
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H01L2924/14369 8 Burst EDO DRAM [BEDO DRAM]
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H01L2924/1437 7 Static random-access memory [SRAM]
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H01L2924/1438 7 Flash memory
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H01L2924/1441 7 Ferroelectric RAM [FeRAM or FRAM]
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H01L2924/1442 7 Synchronous graphics RAM [SGRAM]
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H01L2924/1443 7 Non-volatile random-access memory [NVRAM]
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H01L2924/1444 7 PBRAM
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H01L2924/145 6 Read-only memory [ROM]
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H01L2924/1451 7 EPROM
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H01L2924/14511 8 EEPROM
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H01L2924/1453 7 PROM
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H01L2924/146 2 Mixed devices
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H01L2924/1461 3 MEMS
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H01L2924/15 1 Details of package parts other than the semiconductor or other solid state devices to be connected
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H01L2924/151 2 Die mounting substrate
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H01L2924/1511 3 Structure
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H01L2924/1515 3 Shape
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H01L2924/15151 4 the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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H01L2924/15153 4 the die mounting substrate comprising a recess for hosting the device
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H01L2924/15155 5 the shape of the recess being other than a cuboid
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H01L2924/15156 6 Side view
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H01L2924/15157 6 Top view
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H01L2924/15158 4 the die mounting substrate being other than a cuboid
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H01L2924/15159 5 Side view
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H01L2924/15162 5 Top view
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H01L2924/15165 3 Monolayer substrate
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H01L2924/1517 3 Multilayer substrate
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H01L2924/15172 4 Fan-out arrangement of the internal vias
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H01L2924/15173 5 in a single layer of the multilayer substrate
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H01L2924/15174 5 in different layers of the multilayer substrate
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H01L2924/15182 4 Fan-in arrangement of the internal vias
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H01L2924/15183 5 in a single layer of the multilayer substrate
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H01L2924/15184 5 in different layers of the multilayer substrate
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H01L2924/15192 4 Resurf arrangement of the internal vias
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H01L2924/152 3 Disposition
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H01L2924/153 3 Connection portion
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H01L2924/1531 4 the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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H01L2924/15311 5 being a ball array, e.g. BGA
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H01L2924/15312 5 being a pin array, e.g. PGA
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H01L2924/15313 5 being a land array, e.g. LGA
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H01L2924/1532 4 the connection portion being formed on the die mounting surface of the substrate
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H01L2924/15321 5 being a ball array, e.g. BGA
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H01L2924/15322 5 being a pin array, e.g. PGA
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H01L2924/15323 5 being a land array, e.g. LGA
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H01L2924/1533 5 the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
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H01L2924/15331 6 being a ball array, e.g. BGA
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H01L2924/15332 6 being a pin array, e.g. PGA
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H01L2924/15333 6 being a land array, e.g. LGA
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H01L2924/156 3 Material
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H01L2924/157 4 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2924/15701 5 the principal constituent melting at a temperature of less than 400 C
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H01L2924/15717 5 the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
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H01L2924/15724 6 Aluminium [Al] as principal constituent
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H01L2924/15738 5 the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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H01L2924/15747 6 Copper [Cu] as principal constituent
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H01L2924/1576 6 Iron [Fe] as principal constituent
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H01L2924/15763 5 the principal constituent melting at a temperature of greater than 1550 C
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H01L2924/15786 4 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2924/15787 5 Ceramics, e.g. crystalline carbides, nitrides or oxides
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H01L2924/15788 5 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2924/1579 4 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2924/15791 5 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2924/15793 4 with a principal constituent of the material being a solid not provided for in groups H01L2924/157 - H01L2924/15791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2924/15798 4 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2924/161 2 Cap
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H01L2924/1611 3 Structure
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H01L2924/1615 3 Shape
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H01L2924/16151 4 Cap comprising an aperture, e.g. for pressure control, encapsulation
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H01L2924/16152 4 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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H01L2924/16153 5 Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
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H01L2924/1616 5 Cavity shape
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H01L2924/1617 5 Cavity coating
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H01L2924/16171 6 Material
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H01L2924/16172 7 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2924/16173 7 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2924/16174 8 Ceramics, e.g. crystalline carbides, nitrides or oxides (glass ceramics H01L2224/16175)
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H01L2924/16175 8 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2924/16176 7 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2924/16177 8 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2924/16178 7 with a principal constituent of the material being a solid not provided for in groups H01L2924/157 - H01L2924/15791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2924/16179 7 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2924/1619 5 Cavity coating shape
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H01L2924/16195 4 Flat cap [not enclosing an internal cavity]
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H01L2924/16196 4 Cap forming a cavity, e.g. being a curved metal foil
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H01L2924/162 3 Disposition
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H01L2924/16235 4 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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H01L2924/16251 4 Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
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H01L2924/1626 4 Cap-in-cap assemblies
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H01L2924/1627 4 stacked type assemblies, e.g. stacked multi-cavities
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H01L2924/163 3 Connection portion, e.g. seal
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H01L2924/1631 4 Structure
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H01L2924/16315 4 Shape
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H01L2924/1632 4 Disposition
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H01L2924/164 4 Material
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H01L2924/165 5 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2924/16586 5 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2924/16587 6 Ceramics, e.g. crystalline carbides, nitrides or oxides
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H01L2924/16588 6 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2924/1659 5 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2924/16593 5 with a principal constituent of the material being a solid not provided for in groups H01L2924/157 - H01L2924/15791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2924/16598 5 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2924/166 3 Material
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H01L2924/167 4 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2924/16701 5 the principal constituent melting at a temperature of less than 400 C
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H01L2924/16717 5 the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
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H01L2924/16724 6 Aluminium [Al] as principal constituent
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H01L2924/16738 5 the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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H01L2924/16747 6 Copper [Cu] as principal constituent
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H01L2924/1676 6 Iron [Fe] as principal constituent
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H01L2924/16763 5 the principal constituent melting at a temperature of greater than 1550 C
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H01L2924/16786 4 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2924/16787 5 Ceramics, e.g. crystalline carbides, nitrides or oxides
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H01L2924/16788 5 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2924/1679 4 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2924/16791 5 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2924/16793 4 with a principal constituent of the material being a solid not provided for in groups H01L2924/167 - H01L2924/16791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2924/16798 4 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2924/171 2 Frame
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H01L2924/1711 3 Structure
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H01L2924/1715 3 Shape
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H01L2924/17151 4 Frame comprising an aperture, e.g. for pressure control, encapsulation
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H01L2924/172 3 Disposition
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H01L2924/173 3 Connection portion, e.g. seal
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H01L2924/176 3 Material
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H01L2924/177 4 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2924/17701 5 the principal constituent melting at a temperature of less than 400 C
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H01L2924/17717 5 the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
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H01L2924/17724 6 Aluminium [Al] as principal constituent
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H01L2924/17738 5 the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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H01L2924/17747 6 Copper [Cu] as principal constituent
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H01L2924/1776 6 Iron [Fe] as principal constituent
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H01L2924/17763 5 the principal constituent melting at a temperature of greater than 1550 C
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H01L2924/17786 4 with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2924/17787 5 Ceramics, e.g. crystalline carbides, nitrides or oxides
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H01L2924/17788 5 Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2924/1779 4 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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H01L2924/17791 5 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
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H01L2924/17793 4 with a principal constituent of the material being a solid not provided for in groups H01L2924/177 - H01L2924/17791, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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H01L2924/17798 4 with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2924/181 2 Encapsulation
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H01L2924/1811 3 Structure
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H01L2924/1815 3 Shape
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H01L2924/1816 4 Exposing the passive side of the semiconductor or solid-state body
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H01L2924/18161 5 of a flip chip
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H01L2924/18162 5 of a chip with build-up interconnect
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H01L2924/18165 5 of a wire bonded chip
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H01L2924/182 3 Disposition
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H01L2924/183 3 Connection portion, e.g. seal
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H01L2924/18301 4 being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
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H01L2924/186 3 Material
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H01L2924/19 1 Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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H01L2924/1901 2 Structure
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H01L2924/19011 3 including integrated passive components
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H01L2924/19015 3 including thin film passive components
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H01L2924/1902 3 including thick film passive components
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H01L2924/1903 3 including wave guides
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H01L2924/19031 4 being a strip line type
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H01L2924/19032 4 being a microstrip line type
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H01L2924/19033 4 being a coplanar line type
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H01L2924/19038 4 being a hybrid line type
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H01L2924/19039 5 impedance transition between different types of wave guides
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H01L2924/1904 3 Component type
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H01L2924/19041 4 being a capacitor
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H01L2924/19042 4 being an inductor
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H01L2924/19043 4 being a resistor
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H01L2924/1905 2 Shape
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H01L2924/19051 3 Impedance matching structure [e.g. balun]
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H01L2924/191 2 Disposition
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H01L2924/19101 3 of discrete passive components
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H01L2924/19102 4 in a stacked assembly with the semiconductor or solid state device
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H01L2924/19103 5 interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
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H01L2924/19104 5 on the semiconductor or solid-state device, i.e. passive-on-chip
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H01L2924/19105 4 in a side-by-side arrangement on a common die mounting substrate
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H01L2924/19106 4 in a mirrored arrangement on two different side of a common die mounting substrate
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H01L2924/19107 4 off-chip wires
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H01L2924/20 1 Parameters
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H01L2924/201 2 Temperature ranges
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H01L2924/20101 3 Temperature range T<0 C, T<273.15 K
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H01L2924/20102 3 Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
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H01L2924/20103 3 Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
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H01L2924/20104 3 Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
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H01L2924/20105 3 Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
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H01L2924/20106 3 Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
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H01L2924/20107 3 Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
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H01L2924/20108 3 Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
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H01L2924/20109 3 Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
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H01L2924/2011 3 Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K
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H01L2924/20111 3 Temperature range 450 C=<T<500 C, 723.15K =<T< 773.15K
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H01L2924/202 2 Electromagnetic wavelength ranges [W]
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H01L2924/20201 3 Gamma radiation, i.e. wavelength less than 0.01 nm
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H01L2924/20202 3 X-ray radiation, i.e. wavelength 0.01 to 10 nm
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H01L2924/2021 3 Ultraviolet radiation
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H01L2924/20211 4 UV-C 100=<W<280 nm
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H01L2924/20212 4 UV-B 280=<W<315 nm
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H01L2924/20213 4 UV-A 315=<W<400 nm
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H01L2924/2024 3 Visible spectrum wavelength 390=<W<700 nm, i.e. 400-790 THz
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H01L2924/2026 3 Infrared radiation 700=<W<3000 nm
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H01L2924/20261 4 IR-A 700=<W<1400 nm, i.e. 215 THz-430 THz
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H01L2924/20262 4 IR-B 1400=<W<3000 nm, i.e. 100THz-215 THz
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H01L2924/20263 4 IR-C 3000 nm =<W<1 mm, i.e. 300 GHz-100THz
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H01L2924/2027 3 Radio 1 mm - km 300 GHz - 3 Hz
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H01L2924/20271 4 Microwave radiation 1 mm - 1 meter, i..e 300 GHz - 300 MHz
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H01L2924/203 2 Ultrasonic frequency ranges, i.e. KHz
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H01L2924/20301 3 Ultrasonic frequency [f] f<25 kHz
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H01L2924/20302 3 Ultrasonic frequency [f] 25 Khz=<f< 50 KHz
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H01L2924/20303 3 Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
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H01L2924/20304 3 Ultrasonic frequency [f] 75 Khz=<f< 100 KHz
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H01L2924/20305 3 Ultrasonic frequency [f] 100 Khz=<f< 125 KHz
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H01L2924/20306 3 Ultrasonic frequency [f] 125 Khz=<f< 150 KHz
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H01L2924/20307 3 Ultrasonic frequency [f] 150 Khz=<f< 175 KHz
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H01L2924/20308 3 Ultrasonic frequency [f] 175 Khz=<f< 200 KHz
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H01L2924/20309 3 Ultrasonic frequency [f] f>=200 KHz
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H01L2924/206 2 Length ranges
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H01L2924/2064 3 larger or equal to 1 micron less than 100 microns
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H01L2924/20641 3 larger or equal to 100 microns less than 200 microns
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H01L2924/20642 3 larger or equal to 200 microns less than 300 microns
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H01L2924/20643 3 larger or equal to 300 microns less than 400 microns
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H01L2924/20644 3 larger or equal to 400 microns less than 500 microns
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H01L2924/20645 3 larger or equal to 500 microns less than 600 microns
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H01L2924/20646 3 larger or equal to 600 microns less than 700 microns
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H01L2924/20647 3 larger or equal to 700 microns less than 800 microns
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H01L2924/20648 3 larger or equal to 800 microns less than 900 microns
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H01L2924/20649 3 larger or equal to 900 microns less than 1000 microns
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H01L2924/2065 3 larger or equal to 1000 microns less than 1500 microns
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H01L2924/20651 3 larger or equal to 1500 microns less than 2000 microns
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H01L2924/20652 3 larger or equal to 2000 microns less than 2500 microns
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H01L2924/20653 3 larger or equal to 2500 microns less than 3000 microns
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H01L2924/20654 3 larger or equal to 3000 microns less than 4000 microns
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H01L2924/20655 3 larger or equal to 4000 microns less than 5000 microns
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H01L2924/20656 3 larger or equal to 5000 microns less than 6000 microns
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H01L2924/20657 3 larger or equal to 6000 microns less than 7000 microns
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H01L2924/20658 3 larger or equal to 7000 microns less than 8000 microns
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H01L2924/207 2 Diameter ranges
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H01L2924/2075 3 larger or equal to 1 micron less than 10 microns
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H01L2924/20751 3 larger or equal to 10 microns less than 20 microns
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H01L2924/20752 3 larger or equal to 20 microns less than 30 microns
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H01L2924/20753 3 larger or equal to 30 microns less than 40 microns
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H01L2924/20754 3 larger or equal to 40 microns less than 50 microns
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H01L2924/20755 3 larger or equal to 50 microns less than 60 microns
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H01L2924/20756 3 larger or equal to 60 microns less than 70 microns
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H01L2924/20757 3 larger or equal to 70 microns less than 80 microns
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H01L2924/20758 3 larger or equal to 80 microns less than 90 microns
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H01L2924/20759 3 larger or equal to 90 microns less than 100 microns
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H01L2924/2076 3 equal to or larger than 100 microns
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H01L2924/30 1 Technical effects
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H01L2924/301 2 Electrical effects
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H01L2924/30101 3 Resistance
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H01L2924/30105 3 Capacitance
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H01L2924/30107 3 Inductance
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H01L2924/3011 3 Impedance
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H01L2924/30111 4 matching
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H01L2924/302 3 Electrostatic
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H01L2924/30201 4 Charge
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H01L2924/30205 4 Discharge
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H01L2924/3025 3 Electromagnetic shielding
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H01L2924/35 2 Mechanical effects
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H01L2924/351 3 Thermal stress
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H01L2924/3511 4 Warping
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H01L2924/3512 4 Cracking
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H01L2924/35121 5 Peeling or delaminating
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H01L2924/36 2 Material effects
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H01L2924/364 3 Polymers
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H01L2924/3641 4 Outgassing
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H01L2924/365 3 Metallurgical effects
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H01L2924/3651 4 Formation of intermetallics
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H01L2924/36511 5 Purple plague
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H01L2924/3656 4 Formation of Kirkendall voids
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H01L2924/37 2 Effects of the manufacturing process
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H01L2924/37001 3 Yield
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H01L2924/37002 3 Shelf life
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H01L2924/3701 3 increased through put
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H01L2924/38 2 Effects and problems related to the device integration
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H01L2924/381 3 Pitch distance
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H01L2924/384 3 Bump effects
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H01L2924/3841 4 Solder bridging
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H01L2924/386 3 Wire effects
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H01L2924/3861 4 Sag
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H01L2924/3862 4 Sweep
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H01L2924/40 1 Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
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H01L2924/401 2 LASER
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H01L2924/40101 3 Mode
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H01L2924/40102 4 being pulsed
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H01L2924/40103 4 being continous
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H01L2924/40105 3 Beam details
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H01L2924/4015 4 Shape
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H01L2924/402 3 Type
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H01L2924/40201 4 being a chemical
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H01L2924/40202 5 Deuterium Flouride [DF] LASER
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H01L2924/40203 5 Hydrogen Flouride [HF] LASER
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H01L2924/40207 5 Dye laser
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H01L2924/4025 4 being a gas
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H01L2924/40251 5 argon-ion LASER
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H01L2924/40252 5 CO2 LASER
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H01L2924/40253 5 HeAg LASER
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H01L2924/40254 5 HeNe LASER
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H01L2924/40255 5 NeCu LASER
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H01L2924/403 4 being an Excimer
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H01L2924/40301 5 ArF LASER
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H01L2924/40302 5 F2 LASER
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H01L2924/40303 5 KrCl LASER
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H01L2924/40304 5 KrF LASER
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H01L2924/40305 5 XeCl LASER
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H01L2924/40306 5 XeF LASER
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H01L2924/4035 4 being a fiber hosted LASER
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H01L2924/404 4 being a solid state
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H01L2924/40401 5 Free electron LASER
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H01L2924/40402 5 Photonic crystal LASER
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H01L2924/40403 5 Fiber solid state LASER
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H01L2924/40404 5 Yttrium Aluminium Garnet Nd:YAG LASER
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H01L2924/40405 5 Yttrium Lithium Flouride Nd:YLF LASER
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H01L2924/40406 5 Ruby LASER
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H01L2924/40407 5 Yb:YAG LASER
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H01L2924/405 3 Wavelength
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H01L2924/40501 4 UV spectrum
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H01L2924/40502 4 Visible spectrum
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H01L2924/40503 4 IR spectrum
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H01L2933/00 0 Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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H01L2933/0008 1 Processes
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H01L2933/0016 2 relating to electrodes
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H01L2933/0025 2 relating to coatings
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H01L2933/0033 2 relating to semiconductor body packages
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H01L2933/0041 3 relating to wavelength conversion elements
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H01L2933/005 3 relating to encapsulations
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H01L2933/0058 3 relating to optical field-shaping elements
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H01L2933/0066 3 relating to arrangements for conducting electric current to or from the semiconductor body
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H01L2933/0075 3 relating to heat extraction or cooling elements
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H01L2933/0083 1 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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H01L2933/0091 1 Scattering means in or on the semiconductor body or semiconductor body package (H01L33/22 takes precedence)
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H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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H01M4/00 0 Electrodes
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H01M4/02 1 Electrodes composed of, or comprising, active material
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H01M2004/021 2 {Physical characteristics, e.g. porosity, surface area}
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H01M2004/022 2 {Electrodes made of one single microscopic fiber}
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H01M2004/023 2 {Gel electrode}
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H01M2004/024 2 {Insertable electrodes}
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H01M2004/025 2 {with shapes other than plane or cylindrical}
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H01M2004/026 2 {characterised by the polarity}
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H01M2004/027 3 {Negative electrodes}
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H01M2004/028 3 {Positive electrodes}
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H01M2004/029 3 {Bipolar electrodes}
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H01M4/04 2 Processes of manufacture in general
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H01M4/0402 3 {Methods of deposition of the material}
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H01M4/0404 4 {by coating on electrode collectors}
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H01M4/0407 4 {by coating on an electrolyte layer}
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H01M4/0409 4 {by a doctor blade method, slip-casting or roller coating}
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H01M4/0411 4 {by extrusion}
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H01M4/0414 4 {by screen printing}
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H01M4/0416 4 {involving impregnation with a solution, dispersion, paste or dry powder (H01M4/0438 takes precedence)}
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H01M4/0419 4 {involving spraying}
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H01M4/0421 4 {involving vapour deposition}
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H01M4/0423 5 {Physical vapour deposition}
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H01M4/0426 6 {Sputtering}
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H01M4/0428 5 {Chemical vapour deposition}
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H01M4/043 3 {involving compressing or compaction}
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H01M4/0433 4 {Molding}
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H01M4/0435 4 {Rolling or calendering}
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H01M4/0438 3 {by electrochemical processing (electroless electrochemical plating C23C18/54)}
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H01M4/044 4 {Activating, forming or electrochemical attack of the supporting material}
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H01M4/0442 5 {Anodisation, Oxidation (electrolytic coating by anodisation C25D9/00)}
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H01M4/0445 5 {Forming after manufacture of the electrode, e.g. first charge, cycling}
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H01M4/0447 6 {of complete cells or cells stacks}
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H01M4/045 4 {Electrochemical coating; Electrochemical impregnation}
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H01M4/0452 5 {from solutions}
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H01M4/0454 5 {from melts}
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H01M4/0457 5 {from dispersions or suspensions; Electrophoresis}
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H01M4/0459 4 {Electrochemical doping, intercalation, occlusion or alloying}
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H01M4/0461 5 {Electrochemical alloying}
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H01M4/0464 4 {Electro organic synthesis}
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H01M4/0466 5 {Electrochemical polymerisation}
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H01M4/0469 4 {Electroforming a self-supporting electrode; Electroforming of powdered electrode material}
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H01M4/0471 3 {involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis}
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H01M4/0473 3 {Filling tube-or pockets type electrodes; Applying active mass in cup-shaped terminals}
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H01M4/0476 4 {with molten material}
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H01M4/0478 4 {with dispersions, suspensions or pastes}
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H01M4/048 4 {with dry powder}
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H01M4/0483 3 {by methods including the handling of a melt (H01M4/0438, take precedence)}
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H01M4/0485 4 {Casting}
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H01M4/0488 4 {Alloying}
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H01M4/049 3 {Manufacturing of an active layer by chemical means}
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H01M4/0492 4 {Chemical attack of the support material}
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H01M4/0495 4 {Chemical alloying}
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H01M4/0497 4 {Chemical precipitation}
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H01M4/06 2 Electrodes for primary cells
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H01M4/08 3 Processes of manufacture
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H01M4/10 4 of pressed electrodes with central core, i.e. dollies
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H01M4/12 4 of consumable metal or alloy electrodes (use of alloy compositions as active materials H01M4/38)
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H01M4/13 2 Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
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H01M4/131 3 Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
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H01M4/1315 4 containing halogen atoms, e.g. LiCoOxFy
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H01M4/133 3 Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
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H01M4/134 3 Electrodes based on metals, Si or alloys
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H01M4/136 3 Electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
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H01M4/137 3 Electrodes based on electro-active polymers
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H01M4/139 3 Processes of manufacture
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H01M4/1391 4 of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
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H01M4/13915 5 containing halogen atoms, e.g. LiCoOxFy
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H01M4/1393 4 of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
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H01M4/1395 4 of electrodes based on metals, Si or alloys
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H01M4/1397 4 of electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
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H01M4/1399 4 of electrodes based on electro-active polymers
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H01M4/14 2 Electrodes for lead-acid accumulators
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H01M4/16 3 Processes of manufacture
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H01M4/18 4 of Planté electrodes
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H01M4/20 4 of pasted electrodes
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H01M4/21 5 Drying of pasted electrodes
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H01M4/22 4 Forming of electrodes
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H01M4/23 5 Drying or preserving electrodes after forming
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H01M4/24 2 Electrodes for alkaline accumulators
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H01M4/242 3 {Hydrogen storage electrodes}
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H01M4/244 3 {Zinc electrodes}
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H01M4/246 3 {Cadmium electrodes}
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H01M4/248 3 {Iron electrodes}
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H01M4/26 3 Processes of manufacture
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H01M4/28 4 Precipitating active material on the carrier
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H01M4/29 5 by electrochemical methods
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H01M4/30 4 Pressing
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H01M4/32 3 Nickel oxide or hydroxide electrodes
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H01M4/34 3 Silver oxide or hydroxide electrodes
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H01M4/36 2 Selection of substances as active materials, active masses, active liquids
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H01M4/362 3 {Composites}
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H01M4/364 4 {as mixtures}
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H01M4/366 4 {as layered products}
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H01M4/368 3 {Liquid depolarisers}
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H01M4/38 3 of elements or alloys
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H01M4/381 4 {Alkaline or alkaline earth metals elements (H01M4/40 takes precedence)}
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H01M4/382 5 {Lithium (H01M4/405 takes precedence)}
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H01M4/383 4 {Hydrogen absorbing alloys}
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H01M4/385 5 {of the type LaNi5}
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H01M4/386 4 {Silicon or alloys based on silicon}
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H01M4/387 4 {Tin or alloys based on tin}
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H01M4/388 4 {Halogens}
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H01M4/40 4 Alloys based on alkali metals
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H01M4/405 5 {Alloys based on lithium}
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H01M4/42 4 Alloys based on zinc
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H01M4/44 4 Alloys based on cadmium
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H01M4/46 4 Alloys based on magnesium or aluminium
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H01M4/463 5 {Aluminium based}
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H01M4/466 5 {Magnesium based}
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H01M4/48 3 of inorganic oxides or hydroxides
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H01M4/481 4 {of mercury}
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H01M4/483 4 {for non-aqueous cells (H01M4/485 takes precedence)}
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H01M4/485 4 of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy (H01M4/505, H01M4/525 take precedence)
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H01M4/50 4 of manganese
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H01M4/502 5 {for non-aqueous cells (H01M4/505 takes precedence)}
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H01M4/505 5 of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
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H01M4/52 4 of nickel, cobalt or iron
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H01M4/521 5 {of iron for aqueous cells}
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H01M4/523 5 {for non-aqueous cells (H01M4/525 takes precedence)}
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H01M4/525 5 of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
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H01M4/54 4 of silver
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H01M4/56 4 of lead
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H01M4/57 5 of "grey lead", i.e. powders containing lead and lead oxide
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H01M4/58 3 of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
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H01M4/5805 4 {Phosphides}
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H01M4/581 4 {Chalcogenides or intercalation compounds thereof}
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H01M4/5815 5 {Sulfides}
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H01M4/582 4 {Halogenides}
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H01M4/5825 4 {Oxygenated metallic salts or polyanionic structures, e.g. borates, phosphates, silicates, olivines}
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H01M4/583 4 Carbonaceous material, e.g. graphite-intercalation compounds or CFx
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H01M4/5835 5 {Comprising fluorine or fluoride salts}
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H01M4/587 5 for inserting or intercalating light metals
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H01M4/60 3 of organic compounds
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H01M4/602 4 {Polymers}
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H01M4/604 5 {containing aliphatic main chain polymers}
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H01M4/606 5 {containing aromatic main chain polymers}
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H01M4/608 6 {containing heterocyclic rings}
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H01M4/62 2 Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
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H01M4/621 3 {Binders}
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H01M4/622 4 {being polymers}
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H01M4/623 5 {fluorinated polymers}
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H01M4/624 3 {Electric conductive fillers}
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H01M4/625 4 {Carbon or graphite}
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H01M4/626 4 {Metals}
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H01M4/627 3 {Expanders for lead-acid accumulators}
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H01M4/628 3 {Inhibitors, e.g. gassing inhibitors, corrosion inhibitors}
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H01M4/64 2 Carriers or collectors
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H01M4/66 3 Selection of materials
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H01M4/661 4 {Metal or alloys, e.g. alloy coatings (H01M4/669 take precedence)}
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H01M4/662 5 {Alloys (collectors of lead alloys H01M4/685)}
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H01M4/663 4 {containing carbon or carbonaceous materials as conductive part, e.g. graphite, carbon fibres}
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H01M4/664 4 {Ceramic materials}
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H01M4/665 4 {Composites}
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H01M4/666 5 {in the form of mixed materials (H01M4/668 takes precedence)}
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H01M4/667 5 {in the form of layers, e.g. coatings}
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H01M4/668 4 {Composites of electroconductive material and synthetic resins}
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H01M4/669 4 {Steels}
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H01M4/68 4 for use in lead-acid accumulators
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H01M4/685 5 {Lead alloys}
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H01M4/70 3 characterised by shape or form
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H01M4/72 4 Grids
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H01M4/73 5 for lead-acid accumulators, e.g. frame plates
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H01M4/74 5 Meshes or woven material; Expanded metal
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H01M4/742 6 {perforated material}
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H01M4/745 6 {Expanded metal}
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H01M4/747 6 {Woven material}
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H01M4/75 4 Wires, rods or strips
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H01M4/76 4 Containers for holding the active material, e.g. tubes, capsules
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H01M4/762 5 {Porous or perforated metallic containers}
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H01M4/765 5 {Tubular type or pencil type electrodes; tubular or multitubular sheaths or covers of insulating material for said tubular-type electrodes}
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H01M4/767 6 {Multitubular sheaths or covers}
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H01M4/78 4 Shapes other than plane or cylindrical, e.g. helical
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H01M4/80 4 Porous plates, e.g. sintered carriers
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H01M4/801 5 {Sintered carriers}
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H01M4/803 6 {of only powdered material}
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H01M4/805 6 {of powdered and fibrous material}
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H01M4/806 5 {Nonwoven fibrous fabric containing only fibres}
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H01M4/808 5 {Foamed, spongy materials}
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H01M4/82 3 Multi-step processes for manufacturing carriers for lead-acid accumulators
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H01M4/84 4 involving casting
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H01M4/86 1 Inert electrodes with catalytic activity, e.g. for fuel cells
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H01M4/8605 2 {Porous electrodes}
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H01M4/861 3 {with a gradient in the porosity}
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H01M4/8615 3 {Bifunctional electrodes for rechargeable cells}
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H01M4/8621 3 {containing only metallic or ceramic material, e.g. made by sintering or sputtering}
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H01M4/8626 3 {characterised by the form}
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H01M4/8631 4 {Bipolar electrodes}
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H01M4/8636 2 {with a gradient in another property than porosity (H01M4/861 takes precedence)}
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H01M4/8642 3 {Gradient in composition}
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H01M4/8647 2 {consisting of more than one material, e.g. consisting of composites}
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H01M4/8652 3 {as mixture}
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H01M4/8657 3 {layered}
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H01M4/8663 2 {Selection of inactive substances as ingredients for catalytic active masses, e.g. binders, fillers}
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H01M4/8668 3 {Binders}
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H01M4/8673 3 {Electrically conductive fillers}
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H01M2004/8678 2 {characterised by the polarity}
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H01M2004/8684 3 {Negative electrodes}
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H01M2004/8689 3 {Positive electrodes}
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H01M2004/8694 3 {Bipolar electrodes}
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H01M4/88 2 Processes of manufacture
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H01M4/8803 3 {Supports for the deposition of the catalytic active composition (H01M4/90 takes precedence)}
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H01M4/8807 4 {Gas diffusion layers}
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H01M4/881 4 {Electrolytic membranes}
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H01M4/8814 4 {Temporary supports, e.g. decal}
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H01M4/8817 3 {Treatment of supports before application of the catalytic active composition (coated porous composites H01M8/0245)}
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H01M4/8821 4 {Wet proofing}
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H01M4/8825 3 {Methods for deposition of the catalytic active composition}
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H01M4/8828 4 {Coating with slurry or ink}
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H01M4/8832 5 {Ink jet printing}
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H01M4/8835 5 {Screen printing}
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H01M4/8839 5 {Painting}
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H01M4/8842 4 {Coating using a catalyst salt precursor in solution followed by evaporation and reduction of the precursor}
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H01M4/8846 4 {Impregnation}
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H01M4/885 5 {followed by reduction of the catalyst salt precursor}
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H01M4/8853 4 {Electrodeposition}
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H01M4/8857 4 {Casting, e.g. tape casting, vacuum slip casting}
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H01M4/886 4 {Powder spraying, e.g. wet or dry powder spraying, plasma spraying}
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H01M4/8864 4 {Extrusion}
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H01M4/8867 4 {Vapour deposition}
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H01M4/8871 5 {Sputtering}
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H01M4/8875 3 {Methods for shaping the electrode into free-standing bodies, like sheets, films or grids, e.g. moulding, hot-pressing, casting without support, extrusion without support}
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H01M4/8878 3 {Treatment steps after deposition of the catalytic active composition or after shaping of the electrode being free-standing body}
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H01M4/8882 4 {Heat treatment, e.g. drying, baking}
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H01M4/8885 5 {Sintering or firing}
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H01M4/8889 6 {Cosintering or cofiring of a catalytic active layer with another type of layer}
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H01M4/8892 4 {Impregnation or coating of the catalyst layer, e.g. by an ionomer}
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H01M4/8896 4 {Pressing, rolling, calendering (membrane electrode assemblies H01M8/1004)}
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H01M4/90 2 Selection of catalytic material
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H01M4/9008 3 {Organic or organo-metallic compounds}
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H01M4/9016 3 {Oxides, hydroxides or oxygenated metallic salts}
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H01M4/9025 4 {Oxides specially used in fuel cell operating at high temperature, e.g. SOFC}
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H01M4/9033 5 {Complex oxides, optionally doped, of the type M1MeO3, M1 being an alkaline earth metal or a rare earth, Me being a metal, e.g. perovskites}
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H01M4/9041 3 {Metals or alloys (H01M4/92 takes precedence)}
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H01M4/905 4 {specially used in fuel cell operating at high temperature, e.g. SOFC}
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H01M4/9058 5 {of noble metals or noble-metal based alloys}
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H01M4/9066 5 {of metal-ceramic composites or mixtures, e.g. cermets}
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H01M4/9075 3 {Catalytic material supported on carriers, e.g. powder carriers (H01M4/8807, H01M4/881, H01M4/8814, H01M4/925 take precedence)}
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H01M4/9083 4 {on carbon or graphite}
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H01M4/9091 3 {Unsupported catalytic particles; loose particulate catalytic materials, e.g. in fluidised state}
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H01M4/92 3 Metals of platinum group (H01M4/94 {, H01M4/9058} take precedence)
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H01M4/921 4 {Alloys or mixtures with metallic elements}
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H01M4/923 4 {Compounds thereof with non-metallic elements}
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H01M4/925 4 {supported on carriers, e.g. powder carriers}
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H01M4/926 5 {on carbon or graphite}
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H01M4/928 4 {Unsupported catalytic particles; loose particulate catalytic materials, e.g. in fluidised state}
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H01M4/94 2 Non-porous diffusion electrodes, e.g. palladium membranes, ion exchange membranes
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H01M4/96 2 Carbon-based electrodes
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H01M4/98 2 Raney-type electrodes
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H01M6/00 0 Primary cells; Manufacture thereof
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H01M6/005 1 {Devices for making primary cells}
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H01M6/02 1 Details (of electrodes H01M4/00; of non-active parts H01M50/00)
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H01M6/04 1 Cells with aqueous electrolyte
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H01M6/045 2 {characterised by aqueous electrolyte}
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H01M6/06 2 Dry cells, i.e. cells wherein the electrolyte is rendered non-fluid
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H01M6/08 3 with cup-shaped electrodes
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H01M6/085 4 {of the reversed type, i.e. anode in the centre}
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H01M6/10 3 with wound or folded electrodes
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H01M6/103 4 {Cells with electrode of only one polarity being folded or wound}
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H01M2006/106 4 {Elliptic wound cells}
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H01M6/12 3 with flat electrodes
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H01M6/14 1 Cells with non-aqueous electrolyte
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H01M6/145 2 {containing ammonia}
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H01M6/16 2 with organic electrolyte (H01M6/18 takes precedence)
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H01M6/162 3 {characterised by the electrolyte}
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H01M6/164 4 {by the solvent}
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H01M6/166 4 {by the solute}
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H01M6/168 4 {by additives}
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H01M6/18 2 with solid electrolyte
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H01M6/181 3 {with polymeric electrolytes}
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H01M6/182 3 {with halogenide as solid electrolyte}
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H01M6/183 4 {with fluoride as solid electrolyte}
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H01M6/185 3 {with oxides, hydroxides or oxysalts as solid electrolytes}
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H01M6/186 4 {Only oxysalts-containing solid electrolytes}
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H01M6/187 3 {Solid electrolyte characterised by the form}
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H01M6/188 3 {Processes of manufacture}
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H01M6/20 3 working at high temperature (deferred-action thermal cells H01M6/36)
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H01M6/22 1 Immobilising of electrolyte
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H01M6/24 1 Cells comprising two different electrolytes
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H01M6/26 1 Cells without oxidising active material, e.g. Volta cells
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H01M6/28 1 Standard cells, e.g. Weston cells
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H01M6/30 1 Deferred-action cells
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H01M6/32 2 activated through external addition of electrolyte or of electrolyte components
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H01M6/34 3 Immersion cells, e.g. sea-water cells
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H01M6/36 2 containing electrolyte and made operational by physical means, e.g. thermal cells
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H01M6/38 3 by mechanical means
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H01M6/385 4 {by insertion of electrodes}
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H01M6/40 1 Printed batteries {, e.g. thin film batteries}
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H01M6/42 1 Grouping of primary cells into batteries (H01M6/40 takes precedence)
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H01M6/425 2 {Multimode batteries, batteries with "reserve cells"}
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H01M6/44 2 of tubular or cup-shaped cells
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H01M6/46 2 of flat cells
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H01M6/48 3 with bipolar electrodes
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H01M6/485 4 {Side-by-side bipolar batteries}
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H01M6/50 1 Methods or arrangements for servicing or maintenance, e.g. for maintaining operating temperature (constructional details of current conducting connections for detecting conditions inside cells or batteries, e.g. details of voltage sensing terminals, H01M50/569)
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H01M6/5005 2 {Auxiliary electrodes}
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H01M6/5011 2 {for several cells simultaneously or successively}
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H01M6/5016 3 {Multimode utilisation}
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H01M6/5022 2 {Arrangements for moving electrodes or separating elements}
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H01M6/5027 2 {Dummy cells}
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H01M6/5033 2 {used as charging means for another battery}
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H01M6/5038 2 {Heating or cooling of cells or batteries}
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H01M6/5044 2 {Cells or batteries structurally combined with cell condition indicating means}
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H01M6/505 3 {Cells combined with indicating means for external visualization of the condition, e.g. by change of colour or of light intensity}
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H01M6/5055 3 {End of discharge indicated by a voltage step}
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H01M6/5061 3 {Cells combined with sound indicating means}
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H01M6/5066 2 {Type recognition}
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H01M6/5072 2 {Preserving or storing cells}
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H01M6/5077 2 {Regeneration of reactants or electrolyte}
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H01M6/5083 2 {Testing apparatus}
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H01M6/5088 2 {Initial activation; predischarge; Stabilisation of initial voltage}
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H01M2006/5094 2 {Aspects relating to capacity ratio of electrolyte/electrodes or anode/cathode}
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H01M6/52 1 Reclaiming serviceable parts of waste cells or batteries {, e.g. recycling}
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H01M8/00 0 Fuel cells; Manufacture thereof
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H01M8/002 1 {Shape, form of a fuel cell}
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H01M8/004 2 {Cylindrical, tubular or wound}
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H01M8/006 2 {Flat}
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H01M8/008 1 Disposal or recycling of fuel cells
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H01M8/02 1 Details (electrodes H01M4/86 - H01M4/98)
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H01M8/0202 2 Collectors; Separators, e.g. bipolar separators; Interconnectors
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H01M8/0204 3 Non-porous and characterised by the material
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H01M8/0206 4 Metals or alloys
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H01M8/0208 5 Alloys
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H01M8/021 6 Alloys based on iron
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H01M8/0213 4 Gas-impermeable carbon-containing materials
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H01M8/0215 4 Glass; Ceramic materials
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H01M8/0217 5 Complex oxides, optionally doped, of the type AMO3, A being an alkaline earth metal or rare earth metal and M being a metal, e.g. perovskites
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H01M8/0219 6 {Chromium complex oxides}
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H01M8/0221 4 Organic resins; Organic polymers
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H01M8/0223 4 Composites
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H01M8/0226 5 in the form of mixtures
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H01M8/0228 5 in the form of layered or coated products
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H01M8/023 3 Porous and characterised by the material
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H01M8/0232 4 Metals or alloys
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H01M8/0234 4 Carbonaceous material
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H01M8/0236 4 Glass; Ceramics; Cermets
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H01M8/0239 4 Organic resins; Organic polymers
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H01M8/0241 4 Composites
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H01M8/0243 5 in the form of mixtures
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H01M8/0245 5 in the form of layered or coated products
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H01M8/0247 3 characterised by the form (characterised by a channel configuration H01M8/0258)
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H01M8/025 4 semicylindrical
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H01M8/0252 4 tubular
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H01M8/0254 4 corrugated or undulated
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H01M8/0256 4 Vias, i.e. connectors passing through the separator material
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H01M8/0258 3 characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
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H01M8/026 4 characterised by grooves, e.g. their pitch or depth
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H01M8/0263 4 having meandering or serpentine paths
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H01M8/0265 4 the reactant or coolant channels having varying cross sections
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H01M8/0267 3 having heating or cooling means, e.g. heaters or coolant flow channels
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H01M8/0269 3 {Separators, collectors or interconnectors including a printed circuit board}
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H01M8/0271 2 Sealing or supporting means around electrodes, matrices or membranes
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H01M8/0273 3 with sealing or supporting means in the form of a frame
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H01M8/0276 3 Sealing means characterised by their form (H01M8/0273 takes precedence)
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H01M8/0278 4 {O-rings}
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H01M8/028 3 Sealing means characterised by their material
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H01M8/0282 4 Inorganic material
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H01M8/0284 4 Organic resins; Organic polymers
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H01M8/0286 3 Processes for forming seals
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H01M8/0289 2 Means for holding the electrolyte (solid polymer electrolytes H01M8/1018)
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H01M8/0293 3 Matrices for immobilising electrolyte solutions
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H01M8/0295 3 Matrices for immobilising electrolyte melts
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H01M8/0297 2 Arrangements for joining electrodes, reservoir layers, heat exchange units or bipolar separators to each other (H01M8/0271 takes precedence)
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H01M8/04 1 Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids
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H01M8/04007 2 related to heat exchange
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H01M8/04014 3 Heat exchange using gaseous fluids; Heat exchange by combustion of reactants
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H01M8/04022 4 {Heating by combustion}
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H01M8/04029 3 Heat exchange using liquids
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H01M8/04037 3 {Electrical heating}
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H01M8/04044 3 Purification of heat exchange media
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H01M8/04052 3 {Storage of heat in the fuel cell system}
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H01M8/04059 3 {Evaporative processes for the cooling of a fuel cell}
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H01M8/04067 3 {Heat exchange or temperature measuring elements, thermal insulation, e.g. heat pipes, heat pumps, fins}
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H01M8/04074 4 {Heat exchange unit structures specially adapted for fuel cell}
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H01M8/04082 2 Arrangements for control of reactant parameters, e.g. pressure or concentration
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H01M8/04089 3 of gaseous reactants
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H01M8/04097 4 {with recycling of the reactants (H01M8/04119, H01M8/04104 take precedence)}
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H01M8/04104 4 {Regulation of differential pressures}
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H01M8/04111 4 using a compressor turbine assembly
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H01M8/04119 4 with simultaneous supply or evacuation of electrolyte; Humidifying or dehumidifying
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H01M8/04126 5 {Humidifying}
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H01M8/04134 6 {by coolants}
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H01M8/04141 6 {by water containing exhaust gases}
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H01M8/04149 6 {by diffusion, e.g. making use of membranes}
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H01M8/04156 5 {with product water removal}
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H01M8/04164 6 {by condensers, gas-liquid separators or filters}
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H01M8/04171 6 {using adsorbents, wicks or hydrophilic material}
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H01M8/04179 6 {by purging or increasing flow or pressure of reactants}
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H01M8/04186 3 of liquid-charged or electrolyte-charged reactants
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H01M8/04194 4 {Concentration measuring cells}
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H01M8/04197 3 {Preventing means for fuel crossover}
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H01M8/04201 3 {Reactant storage and supply, e.g. means for feeding, pipes}
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H01M8/04208 4 {Cartridges, cryogenic media or cryogenic reservoirs}
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H01M8/04216 4 {characterised by the choice for a specific material, e.g. carbon, hydride, absorbent}
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H01M8/04223 2 during start-up or shut-down; Depolarisation or activation, e.g. purging; Means for short-circuiting defective fuel cells
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H01M8/04225 3 during start-up
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H01M8/04228 3 during shut-down
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H01M8/04231 3 {Purging of the reactants}
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H01M8/04238 3 {Depolarisation}
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H01M8/04246 3 {Short circuiting means for defective fuel cells (detection of defective fuel cells H01M8/04664, methods for shunting fuel cells H01M8/04955)}
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H01M8/04253 3 {Means for solving freezing problems}
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H01M8/04268 3 {Heating of fuel cells during the start-up of the fuel cells}
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H01M8/04276 2 Arrangements for managing the electrolyte stream, e.g. heat exchange
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H01M8/04283 3 {Supply means of electrolyte to or in matrix-fuel cells}
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H01M8/04291 2 Arrangements for managing water in solid electrolyte fuel cell systems (H01M8/04119 takes precedence)
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H01M8/04298 2 Processes for controlling fuel cells or fuel cell systems
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H01M8/043 3 applied during specific periods
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H01M8/04302 4 applied during start-up
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H01M8/04303 4 applied during shut-down
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H01M8/04305 3 {Modeling, demonstration models of fuel cells, e.g. for training purposes}
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H01M8/04313 3 characterised by the detection or assessment of variables; characterised by the detection or assessment of failure or abnormal function
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H01M8/0432 4 Temperature; Ambient temperature
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H01M8/04328 5 {of anode reactants at the inlet or inside the fuel cell}
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H01M8/04335 5 {of cathode reactants at the inlet or inside the fuel cell}
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H01M8/04343 5 {of anode exhausts}
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H01M8/0435 5 {of cathode exhausts}
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H01M8/04358 5 {of the coolant}
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H01M8/04365 5 {of other components of a fuel cell or fuel cell stacks}
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H01M8/04373 5 {of auxiliary devices, e.g. reformers, compressors, burners}
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H01M8/0438 4 Pressure; Ambient pressure; Flow
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H01M8/04388 5 {of anode reactants at the inlet or inside the fuel cell}
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H01M8/04395 5 {of cathode reactants at the inlet or inside the fuel cell}
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H01M8/04402 5 {of anode exhausts}
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H01M8/0441 5 {of cathode exhausts}
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H01M8/04417 5 {of the coolant}
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H01M8/04425 5 {at auxiliary devices, e.g. reformers, compressors, burners}
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H01M8/04432 5 {Pressure differences, e.g. between anode and cathode}
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H01M8/0444 4 Concentration; Density (H01M8/04492 takes precedence)
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H01M8/04447 5 {of anode reactants at the inlet or inside the fuel cell}
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H01M8/04455 5 {of cathode reactants at the inlet or inside the fuel cell}
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H01M8/04462 5 {of anode exhausts}
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H01M8/0447 5 {of cathode exhausts}
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H01M8/04477 5 {of the electrolyte}
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H01M8/04485 5 {of the coolant}
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H01M8/04492 4 Humidity; Ambient humidity; Water content
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H01M8/045 5 {of anode reactants at the inlet or inside the fuel cell}
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H01M8/04507 5 {of cathode reactants at the inlet or inside the fuel cell}
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H01M8/04514 5 {of anode exhausts}
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H01M8/04522 5 {of cathode exhausts}
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H01M8/04529 5 {of the electrolyte}
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H01M8/04537 4 Electric variables
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H01M8/04544 5 {Voltage}
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H01M8/04552 6 {of the individual fuel cell}
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H01M8/04559 6 {of fuel cell stacks}
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H01M8/04567 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04574 5 {Current}
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H01M8/04582 6 {of the individual fuel cell}
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H01M8/04589 6 {of fuel cell stacks}
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H01M8/04597 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04604 5 {Power, energy, capacity or load}
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H01M8/04611 6 {of the individual fuel cell}
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H01M8/04619 6 {of fuel cell stacks}
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H01M8/04626 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04634 5 {Other electric variables, e.g. resistance or impedance}
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H01M8/04641 6 {of the individual fuel cell}
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H01M8/04649 6 {of fuel cell stacks}
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H01M8/04656 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04664 4 Failure or abnormal function
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H01M8/04671 5 {of the individual fuel cell}
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H01M8/04679 5 {of fuel cell stacks}
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H01M8/04686 5 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04694 3 characterised by variables to be controlled
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H01M8/04701 4 Temperature
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H01M8/04708 5 {of fuel cell reactants}
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H01M8/04716 5 {of fuel cell exhausts}
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H01M8/04723 5 {of the coolant}
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H01M8/04731 5 {of other components of a fuel cell or fuel cell stacks}
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H01M8/04738 5 {of auxiliary devices, e.g. reformer, compressor, burner}
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H01M8/04746 4 Pressure; Flow
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H01M8/04753 5 {of fuel cell reactants}
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H01M8/04761 5 {of fuel cell exhausts}
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H01M8/04768 5 {of the coolant}
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H01M8/04776 5 {at auxiliary devices, e.g. reformer, compressor, burner}
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H01M8/04783 5 {Pressure differences, e.g. between anode and cathode}
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H01M8/04791 4 Concentration; Density (H01M8/04828 takes precedence)
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H01M8/04798 5 {of fuel cell reactants}
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H01M8/04805 5 {of fuel cell exhausts}
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H01M8/04813 5 {of the coolant}
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H01M8/0482 5 {of the electrolyte}
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H01M8/04828 4 Humidity; Water content
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H01M8/04835 5 {of fuel cell reactants}
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H01M8/04843 5 {of fuel cell exhausts}
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H01M8/0485 5 {of the electrolyte}
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H01M8/04858 4 Electric variables
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H01M8/04865 5 {Voltage}
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H01M8/04873 6 {of the individual fuel cell}
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H01M8/0488 6 {of fuel cell stacks}
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H01M8/04888 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04895 5 {Current}
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H01M8/04902 6 {of the individual fuel cell}
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H01M8/0491 6 {of fuel cell stacks}
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H01M8/04917 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04925 5 {Power, energy, capacity or load}
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H01M8/04932 6 {of the individual fuel cell}
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H01M8/0494 6 {of fuel cell stacks}
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H01M8/04947 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04949 5 {other electric variables, e.g. resistance or impedance}
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H01M8/04951 6 {of the individual fuel cell}
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H01M8/04952 6 {of fuel cell stacks}
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H01M8/04953 6 {of auxiliary devices, e.g. batteries, capacitors}
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H01M8/04955 4 Shut-off or shut-down of fuel cells
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H01M8/04992 3 characterised by the implementation of mathematical or computational algorithms, e.g. feedback control loops, fuzzy logic, neural networks or artificial intelligence
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H01M8/06 1 Combination of fuel cells with means for production of reactants or for treatment of residues (regenerative fuel cells H01M8/18)
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H01M8/0606 2 with means for production of gaseous reactants
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H01M8/0612 3 from carbon-containing material
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H01M8/0618 4 {Reforming processes, e.g. autothermal, partial oxidation or steam reforming}
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H01M8/0625 4 {in a modular combined reactor/fuel cell structure}
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H01M8/0631 5 {Reactor construction specially adapted for combination reactor/fuel cell (hydrogen C01B3/00; reactors for physicochemical processes B01J19/00)}
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H01M8/0637 4 Direct internal reforming at the anode of the fuel cell
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H01M8/0643 4 {Gasification of solid fuel}
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H01M8/065 3 by dissolution of metals or alloys; by dehydriding metallic substances
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H01M8/0656 3 by electrochemical means (H01M8/065 takes precedence)
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H01M8/0662 2 Treatment of gaseous reactants or gaseous residues, e.g. cleaning
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H01M8/0668 3 Removal of carbon monoxide or carbon dioxide
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H01M8/0675 3 {Removal of sulfur}
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H01M8/0681 3 {Reactant purification by the use of electrochemical cells}
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H01M8/0687 3 {Reactant purification by the use of membranes or filters}
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H01M8/0693 2 {Treatment of the electrolyte residue, e.g. reconcentrating}
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H01M8/08 1 Fuel cells with aqueous electrolytes
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H01M8/083 2 Alkaline fuel cells
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H01M8/086 2 Phosphoric acid fuel cells [PAFC]
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H01M8/10 1 Fuel cells with solid electrolytes
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H01M8/1004 2 characterised by membrane-electrode assemblies [MEA] (H01M8/12 takes precedence)
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H01M8/1006 3 Corrugated, curved or wave-shaped MEA
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H01M8/1007 2 with both reactants being gaseous or vaporised (H01M8/12 takes precedence)
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H01M8/1009 2 with one of the reactants being liquid, solid or liquid-charged (H01M8/12 takes precedence)
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H01M8/1011 3 Direct alcohol fuel cells [DAFC], e.g. direct methanol fuel cells [DMFC]
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H01M8/1013 4 {Other direct alcohol fuel cells [DAFC]}
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H01M8/1016 2 characterised by the electrolyte material (H01M8/12 takes precedence)
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H01M8/1018 3 Polymeric electrolyte materials
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H01M8/102 4 characterised by the chemical structure of the main chain of the ion-conducting polymer
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H01M8/1023 5 having only carbon, e.g. polyarylenes, polystyrenes or polybutadiene-styrenes
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H01M8/1025 5 having only carbon and oxygen, e.g. polyethers, sulfonated polyetheretherketones [S-PEEK], sulfonated polysaccharides, sulfonated celluloses or sulfonated polyesters
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H01M8/1027 5 having carbon, oxygen and other atoms, e.g. sulfonated polyethersulfones [S-PES]
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H01M8/103 5 having nitrogen, e.g. sulfonated polybenzimidazoles [S-PBI], polybenzimidazoles with phosphoric acid, sulfonated polyamides [S-PA] or sulfonated polyphosphazenes [S-PPh]
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H01M8/1032 5 having sulfur, e.g. sulfonated-polyethersulfones [S-PES]
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H01M8/1034 5 having phosphorus, e.g. sulfonated polyphosphazenes [S-PPh]
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H01M8/1037 5 having silicon, e.g. sulfonated crosslinked polydimethylsiloxanes
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H01M8/1039 4 halogenated, e.g. sulfonated polyvinylidene fluorides
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H01M8/1041 4 Polymer electrolyte composites, mixtures or blends
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H01M8/1044 5 Mixtures of polymers, of which at least one is ionically conductive
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H01M8/1046 5 Mixtures of at least one polymer and at least one additive
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H01M8/1048 6 Ion-conducting additives, e.g. ion-conducting particles, heteropolyacids, metal phosphate or polybenzimidazole with phosphoric acid
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H01M8/1051 6 Non-ion-conducting additives, e.g. stabilisers, SiO2 or ZrO2
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H01M8/1053 5 consisting of layers of polymers with at least one layer being ionically conductive
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H01M8/1055 5 {Inorganic layers on the polymer electrolytes, e.g. inorganic coatings}
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H01M8/1058 4 characterised by a porous support having no ion-conducting properties
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H01M8/106 5 characterised by the chemical composition of the porous support
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H01M8/1062 5 characterised by the physical properties of the porous support, e.g. its porosity or thickness
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H01M8/1065 4 characterised by the form, e.g. perforated or wave-shaped
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H01M8/1067 4 characterised by their physical properties, e.g. porosity, ionic conductivity or thickness
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H01M8/1069 4 characterised by the manufacturing processes
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H01M8/1072 5 by chemical reactions, e.g. insitu polymerisation or insitu crosslinking
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H01M8/1074 6 {Sol-gel processes}
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H01M8/1076 5 {Micromachining techniques, e.g. masking, etching steps or photolithography}
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H01M8/1079 5 {Inducing porosity into non porous precursors membranes, e.g. leaching, pore stretching}
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H01M8/1081 5 starting from solutions, dispersions or slurries exclusively of polymers
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H01M8/1083 5 {Starting from polymer melts other than monomer melts}
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H01M8/1086 5 After-treatment of the membrane other than by polymerisation
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H01M8/1088 6 Chemical modification, e.g. sulfonation
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H01M8/109 6 {thermal other than drying, e.g. sintering}
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H01M8/1093 6 {mechanical, e.g. pressing, puncturing}
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H01M2008/1095 2 {Fuel cells with polymeric electrolytes}
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H01M8/1097 2 Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
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H01M8/12 2 operating at high temperature, e.g. with stabilised ZrO2 electrolyte
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H01M8/1213 3 characterised by the electrode/electrolyte combination or the supporting material
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H01M8/122 4 Corrugated, curved or wave-shaped MEA
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H01M8/1226 4 characterised by the supporting layer
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H01M8/1231 3 with both reactants being gaseous or vaporised
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H01M8/1233 3 with one of the reactants being liquid, solid or liquid-charged
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H01M8/124 3 characterised by the process of manufacturing or by the material of the electrolyte
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H01M8/1246 4 the electrolyte consisting of oxides
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H01M8/1253 5 the electrolyte containing zirconium oxide
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H01M8/126 5 the electrolyte containing cerium oxide
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H01M8/1266 5 {the electrolyte containing bismuth oxide}
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H01M8/1273 5 {Fuel cells with solid halide electrolytes}
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H01M2008/128 3 {Fuel cells with solid halide electrolytes}
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H01M8/1286 3 Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
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H01M2008/1293 3 {Fuel cells with solid oxide electrolytes}
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H01M8/14 1 Fuel cells with fused electrolytes
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H01M8/141 2 {the anode and the cathode being gas-permeable electrodes or electrode layers}
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H01M8/142 3 {with matrix-supported or semi-solid matrix-reinforced electrolyte}
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H01M8/143 2 {with liquid, solid or electrolyte-charged reactants}
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H01M8/144 2 {characterised by the electrolyte material}
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H01M8/145 3 {comprising carbonates}
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H01M8/146 2 {Fuel cells with molten hydroxide}
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H01M2008/147 2 {Fuel cells with molten carbonates}
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H01M8/148 2 {Measures, other than selecting a specific electrode material, to reduce electrode dissolution}
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H01M8/16 1 Biochemical fuel cells, i.e. cells in which microorganisms function as catalysts
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H01M8/18 1 Regenerative fuel cells, e.g. redox flow batteries or secondary fuel cells
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H01M8/182 2 {Regeneration by thermal means}
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H01M8/184 2 {Regeneration by electrochemical means}
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H01M8/186 3 {by electrolytic decomposition of the electrolytic solution or the formed water product}
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H01M8/188 3 {by recharging of redox couples containing fluids; Redox flow type batteries}
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H01M8/20 1 Indirect fuel cells, e.g. fuel cells with redox couple being irreversible (H01M8/18 takes precedence)
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H01M8/22 1 Fuel cells in which the fuel is based on materials comprising carbon or oxygen or hydrogen and other elements; Fuel cells in which the fuel is based on materials comprising only elements other than carbon, oxygen or hydrogen
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H01M8/222 2 {Fuel cells in which the fuel is based on compounds containing nitrogen, e.g. hydrazine, ammonia}
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H01M8/225 2 {Fuel cells in which the fuel is based on materials comprising particulate active material in the form of a suspension, a dispersion, a fluidised bed or a paste}
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H01M8/227 2 {Dialytic cells or batteries; Reverse electrodialysis cells or batteries}
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H01M8/24 1 Grouping of fuel cells, e.g. stacking of fuel cells
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H01M8/2404 2 Processes or apparatus for grouping fuel cells
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H01M8/241 2 with solid or matrix-supported electrolytes
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H01M8/2418 3 Grouping by arranging unit cells in a plane (H01M8/2425, H01M8/244 take precedence)
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H01M8/242 3 comprising framed electrodes or intermediary frame-like gaskets (H01M8/2425, H01M8/244 take precedence)
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H01M8/2425 3 High-temperature cells with solid electrolytes
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H01M8/2428 4 Grouping by arranging unit cells on a surface of any form, e.g. planar or tubular
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H01M8/243 4 Grouping of unit cells of tubular or cylindrical configuration
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H01M8/2432 4 Grouping of unit cells of planar configuration
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H01M8/2435 4 with monolithic core structure, e.g. honeycombs
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H01M8/244 3 with matrix-supported molten electrolyte
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H01M8/2455 2 with liquid, solid or electrolyte-charged reactants
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H01M8/2457 2 with both reactants being gaseous or vaporised
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H01M8/2459 2 {Comprising electrode layers with interposed electrolyte compartment with possible electrolyte supply or circulation}
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H01M8/2465 2 Details of groupings of fuel cells
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H01M8/247 3 Arrangements for tightening a stack, for accommodation of a stack in a tank or for assembling different tanks
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H01M8/2475 4 Enclosures, casings or containers of fuel cell stacks
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H01M8/248 4 Means for compression of the fuel cell stacks
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H01M8/2483 3 characterised by internal manifolds
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H01M8/2484 3 characterised by external manifolds
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H01M8/2485 4 Arrangements for sealing external manifolds; Arrangements for mounting external manifolds around a stack
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H01M8/249 2 comprising two or more groupings of fuel cells, e.g. modular assemblies
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H01M8/2495 3 of fuel cells of different types
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H01M10/00 0 Secondary cells; Manufacture thereof
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H01M10/02 1 Details (of electrodes H01M4/00; of non-active parts H01M50/00)
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H01M10/04 1 Construction or manufacture in general (H01M10/058, H01M10/12, H01M10/28, H01M10/38 take precedence)
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H01M10/0404 2 {Machines for assembling batteries}
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H01M10/0409 3 {for cells with wound electrodes}
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H01M10/0413 2 {Large-sized flat cells or batteries for motive or stationary systems with plate-like electrodes}
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H01M10/0418 3 {with bipolar electrodes}
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H01M10/0422 2 {Cells or battery with cylindrical casing}
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H01M10/0427 3 {Button cells}
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H01M10/0431 2 {Cells with wound or folded electrodes (H01M10/045 takes precedence)}
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H01M10/0436 2 {Small-sized flat cells or batteries for portable equipment}
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H01M10/044 3 {with bipolar electrodes}
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H01M10/0445 2 {Multimode batteries, e.g. containing auxiliary cells or electrodes switchable in parallel or series connections}
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H01M10/045 2 {Cells or batteries with folded plate-like electrodes}
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H01M10/0454 3 {Cells or batteries with electrodes of only one polarity folded}
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H01M10/0459 2 {Cells or batteries with folded separator between plate-like electrodes}
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H01M10/0463 2 {Cells or batteries with horizontal or inclined electrodes}
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H01M10/0468 2 {Compression means for stacks of electrodes and separators}
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H01M10/0472 2 {Vertically superposed cells with vertically disposed plates}
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H01M10/0477 2 {with circular plates}
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H01M10/0481 2 {Compression means other than compression means for stacks of electrodes and separators}
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H01M10/0486 2 {Frames for plates or membranes}
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H01M10/049 2 {Processes for forming or storing electrodes in the battery container}
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H01M2010/0495 2 {Nanobatteries}
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H01M10/05 1 Accumulators with non-aqueous electrolyte (H01M10/39 takes precedence)
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H01M10/052 2 Li-accumulators
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H01M10/0525 3 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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H01M10/054 2 Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
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H01M10/056 2 characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
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H01M10/0561 3 the electrolyte being constituted of inorganic materials only
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H01M10/0562 4 Solid materials
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H01M10/0563 4 Liquid materials, e.g. for Li-SOCl2 cells
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H01M10/0564 3 the electrolyte being constituted of organic materials only
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H01M10/0565 4 Polymeric materials, e.g. gel-type or solid-type
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H01M10/0566 4 Liquid materials
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H01M10/0567 5 characterised by the additives
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H01M10/0568 5 characterised by the solutes
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H01M10/0569 5 characterised by the solvents
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H01M10/058 2 Construction or manufacture
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H01M10/0583 3 of accumulators with folded construction elements except wound ones, i.e. folded positive or negative electrodes or separators, e.g. with "Z"-shaped electrodes or separators
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H01M10/0585 3 of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
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H01M10/0587 3 of accumulators having only wound construction elements, i.e. wound positive electrodes, wound negative electrodes and wound separators
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H01M10/06 1 Lead-acid accumulators (semi-lead accumulators H01M10/20)
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H01M10/08 2 Selection of materials as electrolytes
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H01M10/10 3 Immobilising of electrolyte
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H01M10/12 2 Construction or manufacture
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H01M10/121 3 {Valve regulated lead acid batteries [VRLA]}
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H01M10/122 3 {Multimode batteries}
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H01M10/123 3 {Cells or batteries with cylindrical casing}
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H01M10/124 4 {Button cells}
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H01M10/125 3 {Cells or batteries with wound or folded electrodes}
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H01M10/126 3 {Small-sized flat cells or batteries for portable equipment (H01M10/123 and H01M10/125 take precedence)}
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H01M10/127 4 {with bipolar electrodes}
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H01M10/128 3 {Processes for forming or storing electrodes in the battery container}
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H01M10/14 3 Assembling a group of electrodes or separators
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H01M10/16 3 Suspending or supporting electrodes or groups of electrodes in the case
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H01M10/18 2 with bipolar electrodes
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H01M10/20 1 Semi-lead accumulators, i.e. accumulators in which only one electrode contains lead
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H01M10/22 2 Selection of materials as electrolytes
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H01M10/24 1 Alkaline accumulators
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H01M10/26 2 Selection of materials as electrolytes
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H01M10/28 2 Construction or manufacture
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H01M10/281 3 {Large cells or batteries with stacks of plate-like electrodes}
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H01M10/282 4 {with bipolar electrodes}
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H01M10/283 3 {Cells or batteries with two cup-shaped or cylindrical collectors (H01M10/281 takes precedence)}
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H01M10/285 4 {Button cells}
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H01M10/286 3 {Cells or batteries with wound or folded electrodes}
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H01M10/287 3 {Small-sized flat cells or batteries for portable equipment (H01M10/283 and H01M10/286 take precedence)}
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H01M10/288 3 {Processes for forming or storing electrodes in the battery container}
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H01M10/30 2 Nickel accumulators (H01M10/34 takes precedence)
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H01M10/32 2 Silver accumulators (H01M10/34 takes precedence)
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H01M10/34 1 Gastight accumulators
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H01M10/342 2 {Gastight lead accumulators (H01M10/121 takes precedence)}
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H01M10/345 2 {Gastight metal hydride accumulators}
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H01M10/347 3 {with solid electrolyte}
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H01M10/36 1 Accumulators not provided for in groups H01M10/05-H01M10/34
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H01M10/365 2 {Zinc-halogen accumulators}
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H01M10/38 2 Construction or manufacture
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H01M10/39 2 working at high temperature
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H01M10/3909 3 {Sodium-sulfur cells}
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H01M10/3918 4 {characterised by the electrolyte}
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H01M10/3927 5 {Several layers of electrolyte or coatings containing electrolyte}
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H01M10/3936 5 {Electrolyte with a shape other than plane or cylindrical}
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H01M10/3945 4 {containing additives or special arrangements in the sodium compartment}
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H01M10/3954 4 {containing additives or special arrangement in the sulfur compartment}
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H01M10/3963 4 {Sealing means between the solid electrolyte and holders}
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H01M10/3972 4 {Flexible parts}
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H01M10/3981 4 {Flat cells}
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H01M10/399 3 {Cells with molten salts}
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H01M10/42 1 Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells (H01M10/60 takes precedence)
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H01M10/4207 2 {for several batteries or cells simultaneously or sequentially}
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H01M10/4214 2 {Arrangements for moving electrodes or electrolyte}
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H01M10/4221 2 {with battery type recognition}
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H01M10/4228 2 {Leak testing of cells or batteries}
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H01M10/4235 2 {Safety or regulating additives or arrangements in electrodes, separators or electrolyte (H01M10/4242 takes precedence)}
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H01M10/4242 2 {Regeneration of electrolyte or reactants}
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H01M10/425 2 {Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing (printed circuits H05K1/00)}
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H01M10/4257 3 {Smart batteries, e.g. electronic circuits inside the housing of the cells or batteries}
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H01M10/4264 3 {with capacitors}
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H01M2010/4271 3 {Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing}
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H01M2010/4278 3 {Systems for data transfer from batteries, e.g. transfer of battery parameters to a controller, data transferred between battery controller and main controller}
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H01M10/4285 2 {Testing apparatus}
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H01M2010/4292 2 {Aspects relating to capacity ratio of electrodes/electrolyte or anode/cathode}
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H01M10/44 2 Methods for charging or discharging (circuits for charging H02J7/00)
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H01M10/441 3 {for several batteries or cells simultaneously or sequentially}
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H01M10/443 3 {in response to temperature}
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H01M10/445 3 {in response to gas pressure}
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H01M10/446 3 {Initial charging measures}
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H01M10/448 3 {End of discharge regulating measures}
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H01M10/46 2 Accumulators structurally combined with charging apparatus (circuits for charging H02J7/00)
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H01M10/465 3 {with solar battery as charging system}
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H01M10/48 2 Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte (constructional details of current conducting connections for detecting conditions inside cells or batteries, e.g. details of voltage sensing terminals, H01M50/569)
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H01M10/482 3 {for several batteries or cells simultaneously or sequentially}
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H01M10/484 3 {for measuring electrolyte level, electrolyte density or electrolyte conductivity}
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H01M10/486 3 {for measuring temperature}
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H01M10/488 3 {Cells or batteries combined with indicating means for external visualization of the condition, e.g. by change of colour or of light density}
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H01M10/52 2 Removing gases inside the secondary cell, e.g. by absorption (vent plugs or other mechanical arrangements for facilitating escape of gases H01M50/30)
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H01M10/523 3 {by recombination on a catalytic material}
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H01M10/526 3 {by gas recombination on the electrode surface or by structuring the electrode surface to improve gas recombination}
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H01M10/54 1 Reclaiming serviceable parts of waste accumulators
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H01M10/60 1 Heating or cooling; Temperature control
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H01M10/61 2 Types of temperature control
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H01M10/613 3 Cooling or keeping cold
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H01M10/615 3 Heating or keeping warm
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H01M10/617 3 for achieving uniformity or desired distribution of temperature
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H01M10/62 2 specially adapted for specific applications
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H01M10/623 3 Portable devices, e.g. mobile telephones, cameras or pacemakers
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H01M10/6235 4 Power tools
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H01M10/625 3 Vehicles
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H01M10/627 3 Stationary installations, e.g. power plant buffering or backup power supplies
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H01M10/63 2 Control systems (charging or discharging in response to temperature H01M10/44 {, H01M10/443}; measurement of temperature H01M10/48 {, H01M10/486})
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H01M10/633 3 characterised by algorithms, flow charts, software details or the like
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H01M10/635 3 based on ambient temperature
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H01M10/637 3 characterised by the use of reversible temperature-sensitive devices, e.g. NTC, PTC or bimetal devices; characterised by control of the internal current flowing through the cells, e.g. by switching (means for preventing undesired use or discharge H01M50/572)
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H01M10/64 2 characterised by the shape of the cells
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H01M10/643 3 Cylindrical cells
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H01M10/647 3 Prismatic or flat cells, e.g. pouch cells
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H01M10/65 2 Means for temperature control structurally associated with the cells
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H01M10/651 3 characterised by parameters specified by a numeric value or mathematical formula, e.g. ratios, sizes or concentrations
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H01M10/652 4 characterised by gradients (for achieving a desired temperature gradient H01M10/617)
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H01M10/653 3 characterised by electrically insulating or thermally conductive materials
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H01M10/654 3 located inside the innermost case of the cells, e.g. mandrels, electrodes or electrolytes
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H01M10/655 3 Solid structures for heat exchange or heat conduction
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H01M10/6551 4 Surfaces specially adapted for heat dissipation or radiation, e.g. fins or coatings
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H01M10/6552 4 Closed pipes transferring heat by thermal conductivity or phase transition, e.g. heat pipes
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H01M10/6553 4 Terminals or leads
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H01M10/6554 4 Rods or plates
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H01M10/6555 5 arranged between the cells
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H01M10/6556 4 Solid parts with flow channel passages or pipes for heat exchange (closed pipes H01M10/6552)
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H01M10/6557 5 arranged between the cells
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H01M10/656 3 characterised by the type of heat-exchange fluid
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H01M10/6561 4 Gases
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H01M10/6562 5 with free flow by convection only
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H01M10/6563 5 with forced flow, e.g. by blowers
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H01M10/6564 6 using compressed gas
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H01M10/6565 6 with recirculation or U-turn in the flow path, i.e. back and forth
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H01M10/6566 5 Means within the gas flow to guide the flow around one or more cells, e.g. manifolds, baffles or other barriers (H01M10/6565 takes precedence)
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H01M10/6567 4 Liquids
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H01M10/6568 5 characterised by flow circuits, e.g. loops, located externally to the cells or cell casings
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H01M10/6569 4 Fluids undergoing a liquid-gas phase change or transition, e.g. evaporation or condensation (heat pipes H01M10/6552)
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H01M10/657 3 by electric or electromagnetic means
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H01M10/6571 4 Resistive heaters (arrangements for heating the battery by its resistance to the internal current H01M10/637)
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H01M10/6572 4 Peltier elements or thermoelectric devices
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H01M10/658 3 by thermal insulation or shielding
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H01M10/659 3 by heat storage or buffering, e.g. heat capacity or liquid-solid phase changes or transition
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H01M10/6595 3 by chemical reactions other than electrochemical reactions of the cells, e.g. catalytic heaters or burners
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H01M10/66 2 Heat-exchange relationships between the cells and other systems, e.g. central heating systems or fuel cells
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H01M10/663 3 the system being an air-conditioner or an engine
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H01M10/667 3 the system being an electronic component, e.g. a CPU, an inverter or a capacitor
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H01M12/00 0 Hybrid cells; Manufacture thereof (hybrid capacitors H01G11/00)
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H01M12/02 1 Details (of electrodes H01M4/00; of non-active parts H01M50/00)
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H01M12/04 1 composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type
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H01M12/06 2 with one metallic and one gaseous electrode
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H01M12/065 3 {with plate-like electrodes or stacks of plate-like electrodes}
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H01M12/08 1 composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
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H01M12/085 2 {Zinc-halogen cells or batteries}
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H01M14/00 0 Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
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H01M14/005 1 {Photoelectrochemical storage cells (light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00)}
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H01M16/00 0 Structural combinations of different types of electrochemical generators
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H01M16/003 1 {of fuel cells with other electrochemical devices, e.g. capacitors, electrolysers}
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H01M16/006 2 {of fuel cells with rechargeable batteries}
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H01M50/00 0 Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
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H01M50/10 1 Primary casings, jackets or wrappings of a single cell or a single battery
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H01M50/102 2 characterised by their shape or physical structure
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H01M50/103 3 prismatic or rectangular (H01M50/109, H01M50/11 take precedence)
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H01M50/105 3 Pouches or flexible bags
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H01M50/107 3 having curved cross-section, e.g. round or elliptic (H01M50/103, H01M50/109, H01M50/11 take precedence)
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H01M50/109 3 of button or coin shape
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H01M50/11 3 having a structure in the form of a chip
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H01M50/112 3 Monobloc comprising multiple compartments
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H01M50/114 4 specially adapted for lead-acid cells
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H01M50/116 2 characterised by the material
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H01M50/117 3 Inorganic material
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H01M50/119 4 Metals
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H01M50/121 3 Organic material
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H01M50/122 3 Composite material consisting of a mixture of organic and inorganic materials
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H01M50/124 3 having a layered structure
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H01M50/1243 4 {characterised by the internal coating on the casing}
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H01M50/1245 4 {characterised by the external coating on the casing}
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H01M50/126 4 comprising three or more layers
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H01M50/128 5 with two or more layers of only inorganic material
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H01M50/129 5 with two or more layers of only organic material
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H01M50/131 2 characterised by physical properties, e.g. gas-permeability or size
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H01M50/133 3 Thickness
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H01M50/134 3 Hardness
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H01M50/136 3 Flexibility or foldability
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H01M50/138 2 adapted for specific cells, e.g. electrochemical cells operating at high temperature
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H01M50/1385 3 {Hybrid cells}
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H01M50/14 2 for protecting against damage caused by external factors
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H01M50/141 3 for protecting against humidity
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H01M50/143 3 Fireproof; Explosion-proof
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H01M50/145 3 for protecting against corrosion
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H01M50/147 2 Lids or covers
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H01M50/148 3 characterised by their shape
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H01M50/15 4 for prismatic or rectangular cells (H01M50/153 takes precedence)
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H01M50/152 4 for cells having curved cross-section, e.g. round or elliptic (H01M50/15, H01M50/153 take precedence)
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H01M50/153 4 for button or coin cells
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H01M50/1535 4 {adapted for specific cells, e.g. electrochemical cells operating at high temperature}
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H01M50/1537 5 {for hybrid cells}
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H01M50/154 4 {Lid or cover comprising an axial bore for receiving a central current collector}
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H01M50/155 3 characterised by the material
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H01M50/157 4 Inorganic material
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H01M50/159 5 Metals
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H01M50/162 4 Composite material consisting of a mixture of organic and inorganic materials
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H01M50/164 4 having a layered structure
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H01M50/166 3 characterised by the methods of assembling casings with lids
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H01M50/167 4 by crimping
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H01M50/169 4 by welding, brazing or soldering
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H01M50/171 4 using adhesives or sealing agents
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H01M50/172 2 Arrangements of electric connectors penetrating the casing
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H01M50/174 3 adapted for the shape of the cells
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H01M50/176 4 for prismatic or rectangular cells (H01M50/181 takes precedence)
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H01M50/178 4 for pouch or flexible bag cells
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H01M50/179 4 for cells having curved cross-section, e.g. round or elliptic (H01M50/176, H01M50/181 take precedence)
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H01M50/181 4 for button or coin cells
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H01M50/182 4 {for cells with a collector centrally disposed in the active mass, e.g. Leclanché cells}
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H01M50/183 2 Sealing members
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H01M50/184 3 characterised by their shape or structure
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H01M50/186 3 characterised by the disposition of the sealing members
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H01M50/188 4 the sealing members being arranged between the lid and terminal
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H01M50/19 3 characterised by the material
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H01M50/191 4 Inorganic material
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H01M50/193 4 Organic material
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H01M50/195 4 Composite material consisting of a mixture of organic and inorganic materials
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H01M50/197 4 having a layered structure
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H01M50/198 4 characterised by physical properties, e.g. adhesiveness or hardness
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H01M50/20 1 Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders (structural combination of accumulators with charging apparatus H01M10/46)
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H01M50/202 2 Casings or frames around the primary casing of a single cell or a single battery
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H01M50/204 2 Racks, modules or packs for multiple batteries or multiple cells
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H01M50/207 3 characterised by their shape
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H01M50/209 4 adapted for prismatic or rectangular cells (H01M50/216 takes precedence)
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H01M50/211 4 adapted for pouch cells
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H01M50/213 4 adapted for cells having curved cross-section, e.g. round or elliptic (H01M50/209, H01M50/216 take precedence)
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H01M50/216 4 adapted for button or coin cells
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H01M50/218 2 characterised by the material
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H01M50/22 3 of the casings or racks
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H01M50/222 4 Inorganic material
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H01M50/224 5 Metals
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H01M50/227 4 Organic material
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H01M50/229 4 Composite material consisting of a mixture of organic and inorganic materials
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H01M50/231 4 having a layered structure
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H01M50/233 2 characterised by physical properties of casings or racks, e.g. dimensions
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H01M50/236 3 Hardness
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H01M50/238 3 Flexibility or foldability
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H01M50/24 3 adapted for protecting batteries from their environment, e.g. from corrosion (thermal insulation H01M10/658)
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H01M50/242 3 adapted for protecting batteries against vibrations, collision impact or swelling
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H01M50/244 2 Secondary casings; Racks; Suspension devices; Carrying devices; Holders characterised by their mounting method
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H01M50/247 2 specially adapted for portable devices, e.g. mobile phones, computers, hand tools or pacemakers
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H01M50/249 2 specially adapted for aircraft or vehicles, e.g. cars or trains (constructional details of batteries specially adapted for electric vehicles B60L50/64)
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H01M50/251 2 specially adapted for stationary devices, e.g. power plant buffering or backup power supplies
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H01M50/253 2 adapted for specific cells, e.g. electrochemical cells operating at high temperature
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H01M50/256 2 Carrying devices, e.g. belts
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H01M50/258 2 Modular batteries; Casings provided with means for assembling
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H01M50/26 3 Assemblies sealed to each other in a non-detachable manner
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H01M50/262 2 with fastening means, e.g. locks
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H01M50/264 3 for cells or batteries, e.g. straps, tie rods or peripheral frames
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H01M50/267 2 having means for adapting to batteries or cells of different types or different sizes
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H01M50/269 2 Mechanical means for varying the arrangement of batteries or cells for different uses, e.g. for changing the number of batteries or for switching between series and parallel wiring (methods or arrangements for servicing or maintenance H01M6/50, H01M10/42)
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H01M50/271 2 Lids or covers for the racks or secondary casings
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H01M50/273 3 characterised by the material
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H01M50/276 4 Inorganic material
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H01M50/278 4 Organic material
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H01M50/28 4 Composite material consisting of a mixture of organic and inorganic materials
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H01M50/282 4 having a layered structure
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H01M50/284 2 with incorporated circuit boards, e.g. printed circuit boards [PCB]
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H01M50/287 3 Fixing of circuit boards to lids or covers
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H01M50/289 2 characterised by spacing elements or positioning means within frames, racks or packs (spacing elements inside cells other than separators, membranes or diaphragms H01M50/471)
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H01M50/291 3 characterised by their shape
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H01M50/293 3 characterised by the material
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H01M50/296 2 characterised by terminals of battery packs (terminals of batteries H01M50/543)
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H01M50/298 2 characterised by the wiring of battery packs
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H01M50/30 1 Arrangements for facilitating escape of gases
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H01M50/308 2 Detachable arrangements, e.g. detachable vent plugs or plug systems
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H01M50/317 2 Re-sealable arrangements
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H01M50/325 3 comprising deformable valve members, e.g. elastic or flexible valve members
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H01M50/333 4 Spring-loaded vent valves
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H01M50/342 2 Non-re-sealable arrangements
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H01M50/3425 3 {in the form of rupturable membranes or weakened parts, e.g. pierced with the aid of a sharp member}
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H01M50/35 2 Gas exhaust passages comprising elongated, tortuous or labyrinth-shaped exhaust passages
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H01M50/358 3 External gas exhaust passages located on the battery cover or case
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H01M50/367 3 Internal gas exhaust passages forming part of the battery cover or case; Double cover vent systems
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H01M50/375 2 Vent means sensitive to or responsive to temperature
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H01M50/383 2 Flame arresting or ignition-preventing means
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H01M50/392 2 with means for neutralising or absorbing electrolyte; with means for preventing leakage of electrolyte through vent holes
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H01M50/394 2 {Gas-pervious parts or elements}
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H01M50/40 1 Separators; Membranes; Diaphragms; Spacing elements inside cells
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H01M50/403 2 Manufacturing processes of separators, membranes or diaphragms
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H01M50/406 3 Moulding; Embossing; Cutting
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H01M50/409 2 Separators, membranes or diaphragms characterised by the material
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H01M50/411 3 Organic material
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H01M50/414 4 Synthetic resins, e.g. thermoplastics or thermosetting resins
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H01M50/417 5 Polyolefins
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H01M50/42 5 Acrylic resins
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H01M50/423 5 Polyamide resins
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H01M50/426 5 Fluorocarbon polymers
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H01M50/429 4 Natural polymers
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H01M50/4295 5 {Natural cotton, cellulose or wood}
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H01M50/431 3 Inorganic material
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H01M50/434 4 Ceramics
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H01M50/437 5 Glass
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H01M50/44 3 Fibrous material
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H01M50/443 3 Particulate material
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H01M50/446 3 Composite material consisting of a mixture of organic and inorganic materials
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H01M50/449 3 having a layered structure
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H01M50/451 4 comprising layers of only organic material and layers containing inorganic material
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H01M50/454 4 comprising a non-fibrous layer and a fibrous layer superimposed on one another
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H01M50/457 4 comprising three or more layers
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H01M50/46 2 Separators, membranes or diaphragms characterised by their combination with electrodes
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H01M50/461 3 {with adhesive layers between electrodes and separators}
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H01M50/463 2 Separators, membranes or diaphragms characterised by their shape
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H01M50/466 3 U-shaped, bag-shaped or folded
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H01M50/469 3 tubular or cylindrical
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H01M50/471 2 Spacing elements inside cells other than separators, membranes or diaphragms (for preventing incorrect contact inside or outside batteries H01M50/584); Manufacturing processes thereof
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H01M50/474 3 characterised by their position inside the cells
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H01M50/477 3 characterised by their shape
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H01M50/48 3 characterised by the material
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H01M50/483 4 Inorganic material
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H01M50/486 4 Organic material
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H01M50/489 2 Separators, membranes, diaphragms or spacing elements inside the cells, characterised by their physical properties, e.g. swelling degree, hydrophilicity or shut down properties
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H01M50/491 3 Porosity
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H01M50/494 3 Tensile strength
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H01M50/497 3 Ionic conductivity
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H01M50/50 1 Current conducting connections for cells or batteries
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H01M50/502 2 Interconnectors for connecting terminals of adjacent batteries; Interconnectors for connecting cells outside a battery casing
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H01M50/503 3 characterised by the shape of the interconnectors
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H01M50/505 3 comprising a single busbar
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H01M50/507 3 comprising an arrangement of two or more busbars within a container structure, e.g. busbar modules
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H01M50/509 3 characterised by the type of connection, e.g. mixed connections
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H01M50/51 4 Connection only in series
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H01M50/512 4 Connection only in parallel
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H01M50/514 3 Methods for interconnecting adjacent batteries or cells
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H01M50/516 4 by welding, soldering or brazing
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H01M50/517 4 by fixing means, e.g. screws, rivets or bolts
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H01M50/519 3 comprising printed circuit boards [PCB]
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H01M50/521 3 characterised by the material
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H01M50/522 4 Inorganic material
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H01M50/524 4 Organic material
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H01M50/526 4 having a layered structure
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H01M50/528 2 Fixed electrical connections, i.e. not intended for disconnection
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H01M50/529 3 Intercell connections through partitions, e.g. in a battery casing
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H01M50/531 2 Electrode connections inside a battery casing
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H01M50/533 3 characterised by the shape of the leads or tabs
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H01M50/534 3 characterised by the material of the leads or tabs
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H01M50/536 3 characterised by the method of fixing the leads to the electrodes, e.g. by welding
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H01M50/538 3 Connection of several leads or tabs of wound or folded electrode stacks
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H01M50/54 3 Connection of several leads or tabs of plate-like electrode stacks, e.g. electrode pole straps or bridges
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H01M50/541 4 for lead-acid accumulators
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H01M50/543 2 Terminals
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H01M50/545 3 formed by the casing of the cells (cup shaped terminals adapted for cells having curved cross-section H01M50/56)
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H01M50/547 3 characterised by the disposition of the terminals on the cells
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H01M50/548 4 on opposite sides of the cell
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H01M50/55 4 on the same side of the cell
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H01M50/552 3 characterised by their shape
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H01M50/553 4 Terminals adapted for prismatic, pouch or rectangular cells
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H01M50/555 5 Window-shaped terminals
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H01M50/557 5 Plate-shaped terminals
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H01M50/559 4 Terminals adapted for cells having curved cross-section, e.g. round, elliptic or button cells (H01M50/553 takes precedence)
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H01M50/56 5 Cup shaped terminals
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H01M50/561 4 {Hollow metallic terminals, e.g. terminal bushings}
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H01M50/562 3 characterised by the material
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H01M50/564 3 characterised by their manufacturing process
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H01M50/566 4 by welding, soldering or brazing
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H01M50/567 4 by fixing means, e.g. screws, rivets or bolts
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H01M50/569 2 Constructional details of current conducting connections for detecting conditions inside cells or batteries, e.g. details of voltage sensing terminals (battery terminal connectors with integrated measuring arrangements G01R31/364)
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H01M50/571 2 Methods or arrangements for affording protection against corrosion; Selection of materials therefor
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H01M50/572 2 Means for preventing undesired use or discharge
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H01M50/574 3 Devices or arrangements for the interruption of current
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H01M50/576 4 in response to theft
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H01M50/578 4 in response to pressure
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H01M50/579 4 in response to shock
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H01M50/581 4 in response to temperature
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H01M50/583 4 in response to current, e.g. fuses
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H01M50/584 3 for preventing incorrect connections inside or outside the batteries
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H01M50/586 4 inside the batteries, e.g. incorrect connections of electrodes
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H01M50/588 4 outside the batteries, e.g. incorrect connections of terminals or busbars
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H01M50/59 4 characterised by the protection means
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H01M50/591 5 Covers
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H01M50/593 5 Spacers; Insulating plates
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H01M50/595 5 Tapes
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H01M50/597 5 Protection against reversal of polarity
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H01M50/598 3 Guarantee labels
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H01M50/60 1 Arrangements or processes for filling or topping-up with liquids; Arrangements or processes for draining liquids from casings
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H01M50/609 2 Arrangements or processes for filling with liquid, e.g. electrolytes
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H01M50/618 3 Pressure control
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H01M50/627 3 Filling ports
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H01M50/636 4 Closing or sealing filling ports, e.g. using lids
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H01M50/645 5 Plugs
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H01M50/655 6 specially adapted for venting
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H01M50/664 5 Temporary seals, e.g. for storage of instant batteries or seawater batteries
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H01M50/668 2 {Means for preventing spilling of liquid or electrolyte, e.g. when the battery is tilted or turned over}
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H01M50/673 2 Containers for storing liquids; Delivery conduits therefor
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H01M50/682 3 accommodated in battery or cell casings
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H01M50/691 2 Arrangements or processes for draining liquids from casings; Cleaning battery or cell casings
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H01M50/70 1 Arrangements for stirring or circulating the electrolyte
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H01M50/73 2 Electrolyte stirring by the action of gas on or in the electrolyte
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H01M2200/00 0 Safety devices for primary or secondary batteries
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H01M2200/10 1 Temperature sensitive devices
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H01M2200/101 2 Bimetal
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H01M2200/20 1 Pressure-sensitive devices
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H01M2200/30 1 Preventing polarity reversal
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H01M2220/00 0 Batteries for particular applications
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H01M2220/10 1 Batteries in stationary systems, e.g. emergency power source in plant
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H01M2220/20 1 Batteries in motive systems, e.g. vehicle, ship, plane
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H01M2220/30 1 Batteries in portable systems, e.g. mobile phone, laptop
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H01M2250/40 1 Combination of fuel cells with other energy production systems
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H01M2250/402 2 Combination of fuel cell with other electric generators (combination of fuel cells with other electrochemical generator H01M16/003)
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H01M2250/405 2 Cogeneration of heat or hot water
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H01M2250/407 2 Combination of fuel cells with mechanical energy generators
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H01M2300/00 0 Electrolytes
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H01M2300/0002 1 Aqueous electrolytes
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H01M2300/0005 2 Acid electrolytes
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H01M2300/0008 3 Phosphoric acid-based
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H01M2300/0011 3 Sulfuric acid-based
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H01M2300/0014 2 Alkaline electrolytes
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H01M2300/0017 1 Non-aqueous electrolytes
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H01M2300/002 2 Inorganic electrolyte
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H01M2300/0022 3 Room temperature molten salts
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H01M2300/0025 2 Organic electrolyte
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H01M2300/0028 3 characterised by the solvent
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H01M2300/0031 4 Chlorinated solvents
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H01M2300/0034 4 Fluorinated solvents
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H01M2300/0037 4 Mixture of solvents
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H01M2300/0045 3 Room temperature molten salts comprising at least one organic ion
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H01M2300/0048 2 Molten electrolytes used at high temperature
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H01M2300/0051 3 Carbonates
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H01M2300/006 3 Hydroxides
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H01M2300/0062 3 Nitrates
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H01M2300/0065 2 Solid electrolytes
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H01M2300/0068 3 inorganic
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H01M2300/0071 4 Oxides
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H01M2300/0074 5 Ion conductive at high temperature
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H01M2300/0082 3 Organic polymers
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H01M2300/0085 1 Immobilising or gelification of electrolyte
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H01M2300/0091 2 in the form of mixtures
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H01M2300/0097 3 with adhesive layers
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H01P WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
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H01P1/00 0 Auxiliary devices (coupling devices of the waveguide type H01P5/00)
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H01P1/005 1 {Diode mounting means}
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H01P1/02 1 Bends; Corners; Twists
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H01P1/022 2 {in waveguides of polygonal cross-section (H01P1/065 takes precedence)}
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H01P1/025 3 {in the E-plane}
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H01P1/027 3 {in the H-plane}
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H01P1/04 1 Fixed joints
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H01P1/042 2 {Hollow waveguide joints}
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H01P1/06 1 Movable joints, e.g. rotating joints
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H01P1/061 2 {the relative movement being a translation along an axis common to at least two rectilinear parts, e.g. expansion joints}
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H01P1/064 4 {the axis of rotation being perpendicular to the transmission path, e.g. hinge joint}
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H01P1/065 4 {the axis of rotation being parallel to the transmission path, e.g. stepped twist}
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H01P1/066 3 {with an unlimited angle of rotation}
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H01P1/067 4 {the energy being transmitted in only one line located on the axis of rotation}
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H01P1/068 4 {the energy being transmitted in at least one ring-shaped transmission line located around the axis of rotation, e.g. "around the mast" rotary joint (H01P1/069 takes precedence; coaxial line with solid inner conductor H01P1/067)}
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H01P1/069 4 {the energy being transmitted in at least one ring-shaped transmission line located around an axial transmission line; Concentric coaxial systems}
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H01P1/08 1 Dielectric windows
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H01P1/10 1 for switching or interrupting {(in systems using reflection or reradiation of radio, acoustic or other waves G01S7/034)}
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H01P1/11 2 by ferromagnetic devices
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H01P1/12 2 by mechanical chopper
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H01P1/122 3 {Waveguide switches}
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H01P1/125 3 {Coaxial switches}
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H01P1/127 3 {Strip line switches}
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H01P1/14 2 by electric discharge devices (discharge devices H01J17/64)
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H01P1/15 2 by semiconductor devices
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H01P1/16 1 for mode selection, e.g. mode suppression or mode promotion; for mode conversion
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H01P1/161 2 sustaining two independent orthogonal modes, e.g. orthomode transducer {(combining or separating polarisations and frequencies H01P1/2131)}
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H01P1/162 2 absorbing spurious or unwanted modes of propagation
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H01P1/163 2 specifically adapted for selection or promotion of the TE01 circular-electric mode
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H01P1/165 1 for rotating the plane of polarisation
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H01P1/17 2 for producing a continuously rotating polarisation, e.g. circular polarisation
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H01P1/171 3 {using a corrugated or ridged waveguide section}
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H01P1/172 3 {using a dielectric element}
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H01P1/173 3 {using a conductive element}
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H01P1/174 3 {using a magnetic element (H01P1/175 takes precedence)}
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H01P1/175 2 using Faraday rotators
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H01P1/18 1 Phase-shifters (H01P1/165 takes precedence)
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H01P1/181 2 {using ferroelectric devices}
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H01P1/182 2 {Waveguide phase-shifters (H01P1/181, H01P1/185, H01P1/19 take precedence)}
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H01P1/183 2 {Coaxial phase-shifters (H01P1/181, H01P1/185, H01P1/19 take precedence)}
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H01P1/184 2 {Strip line phase-shifters (H01P1/181, H01P1/185, H01P1/19 take precedence)}
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H01P1/185 2 using a diode or a gas filled discharge tube
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H01P1/19 2 using a ferromagnetic device
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H01P1/195 3 having a toroidal shape
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H01P1/20 1 Frequency-selective devices, e.g. filters
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H01P1/2002 2 {Dielectric waveguide filters (H01P1/212, H01P1/213, H01P1/215, H01P1/219 take precedence)}
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H01P1/2005 2 {Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]}
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H01P1/2007 2 {Filtering devices for biasing networks or DC returns}
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H01P1/201 2 Filters for transverse electromagnetic waves (H01P1/212, H01P1/213, H01P1/215, H01P1/219 take precedence)
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H01P1/2013 3 {Coplanar line filters}
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H01P1/2016 3 {Slot line filters; Fin line filters}
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H01P1/202 3 Coaxial filters (cascaded coaxial cavities H01P1/205)
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H01P1/203 3 Strip line filters
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H01P1/20309 4 {with dielectric resonator}
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H01P1/20318 5 {with dielectric resonators as non-metallised opposite openings in the metallised surfaces of a substrate}
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H01P1/20327 4 {Electromagnetic interstage coupling}
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H01P1/20336 5 {Comb or interdigital filters}
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H01P1/20345 6 {Multilayer filters}
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H01P1/20354 5 {Non-comb or non-interdigital filters}
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H01P1/20363 6 {Linear resonators}
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H01P1/20372 6 {Hairpin resonators}
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H01P1/20381 6 {Special shape resonators}
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H01P1/2039 4 {Galvanic coupling between Input/Output}
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H01P1/205 3 Comb or interdigital filters; Cascaded coaxial cavities (H01P1/203 takes precedence)
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H01P1/2053 4 {the coaxial cavity resonators being disposed parall to each other}
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H01P1/2056 4 {Comb filters or interdigital filters with metallised resonator holes in a dielectric block}
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H01P1/207 2 Hollow waveguide filters (H01P1/212, H01P1/213, H01P1/215, H01P1/219 take precedence)
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H01P1/208 3 Cascaded cavities; Cascaded resonators inside a hollow waveguide structure (H01P1/205 takes precedence)
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H01P1/2082 4 {with multimode resonators (H01P1/2086 takes precedence)}
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H01P1/2084 4 {with dielectric resonators}
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H01P1/2086 5 {multimode}
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H01P1/2088 4 {Integrated in a substrate}
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H01P1/209 3 comprising one or more branching arms or cavities wholly outside the main waveguide
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H01P1/211 3 Waffle-iron filters; Corrugated structures
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H01P1/212 2 suppressing or attenuating harmonic frequencies (H01P1/215 takes precedence)
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H01P1/213 2 combining or separating two or more different frequencies (H01P1/215 takes precedence)
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H01P1/2131 3 {with combining or separating polarisations}
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H01P1/2133 3 {using coaxial filters (H01P1/2131, H01P1/2136 take precedence)}
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H01P1/2135 3 {using strip line filters (H01P1/2131 takes precedence)}
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H01P1/2136 3 {using comb or interdigital filters; using cascaded coaxial cavities (H01P1/2131, H01P1/2135 take precedence)}
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H01P1/2138 3 {using hollow waveguide filters (H01P1/2131 takes precedence)}
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H01P1/215 2 using ferromagnetic material
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H01P1/217 3 the ferromagnetic material acting as a tuning element in resonators
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H01P1/218 3 the ferromagnetic material acting as a frequency selective coupling element, e.g. YIG-filters
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H01P1/219 2 Evanescent mode filters
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H01P1/22 1 Attenuating devices (dissipative terminating devices H01P1/26)
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H01P1/222 2 {Waveguide attenuators (H01P1/23 takes precedence)}
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H01P1/225 2 {Coaxial attenuators (H01P1/23 takes precedence)}
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H01P1/227 2 {Strip line attenuators (H01P1/23 takes precedence)}
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H01P1/23 2 using ferromagnetic material
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H01P1/24 1 Terminating devices
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H01P1/26 2 Dissipative terminations
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H01P1/262 3 {the dissipative medium being a liquid or being cooled by a liquid}
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H01P1/264 3 {Waveguide terminations (H01P1/262 takes precedence)}
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H01P1/266 3 {Coaxial terminations (H01P1/262 takes precedence)}
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H01P1/268 3 {Strip line terminations (H01P1/262 takes precedence)}
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H01P1/28 2 Short-circuiting plungers
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H01P1/30 1 for compensation of, or protection against, temperature or moisture effects {; for improving power handling capability (H01P1/04, H01P1/08 take precedence)}
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H01P1/32 1 Non-reciprocal transmission devices (H01P1/02 - H01P1/30 take precedence)
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H01P1/36 2 Isolators
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H01P1/362 3 {Edge-guided mode devices}
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H01P1/365 3 Resonance absorption isolators
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H01P1/37 3 Field displacement isolators
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H01P1/375 3 using Faraday rotators
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H01P1/38 2 Circulators
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H01P1/383 3 Junction circulators, e.g. Y-circulators
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H01P1/387 4 Strip line circulators
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H01P1/39 4 Hollow waveguide circulators
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H01P1/393 3 using Faraday rotators
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H01P1/397 3 using non- reciprocal phase shifters (H01P1/393 takes precedence)
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H01P3/00 0 Waveguides; Transmission lines of the waveguide type
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H01P3/003 1 {Coplanar lines}
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H01P3/006 2 {Conductor backed coplanar waveguides}
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H01P3/02 1 with two longitudinal conductors
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H01P3/023 2 {Fin lines; Slot lines}
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H01P3/026 2 {Coplanar striplines [CPS]}
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H01P3/04 2 Lines formed as Lecher wire pairs
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H01P3/06 2 Coaxial lines
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H01P3/08 2 Microstrips; Strip lines
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H01P3/081 3 {Microstriplines}
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H01P3/082 4 {Multilayer dielectric}
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H01P3/084 4 {Suspended microstriplines}
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H01P3/085 3 {Triplate lines}
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H01P3/087 4 {Suspended triplate lines}
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H01P3/088 3 {Stacked transmission lines}
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H01P3/10 1 Wire waveguides, i.e. with a single solid longitudinal conductor
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H01P3/12 1 Hollow waveguides (H01P3/20 takes precedence)
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H01P3/121 2 {integrated in a substrate}
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H01P3/122 2 {Dielectric loaded (not air)}
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H01P3/123 2 with a complex or stepped cross-section, e.g. ridged or grooved waveguides (H01P3/14 takes precedence)
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H01P3/127 2 with a circular, elliptic, or parabolic cross-section
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H01P3/13 2 specially adapted for transmission of the TE01 circular-electric mode {(selection, promotion H01P1/163)}
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H01P3/14 2 flexible
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H01P3/16 1 Dielectric waveguides, i.e. without a longitudinal conductor
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H01P3/165 2 {Non-radiating dielectric waveguides}
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H01P3/18 1 built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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H01P3/20 1 Quasi-optical arrangements for guiding a wave, e.g. focusing by dielectric lenses
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H01P5/00 0 Coupling devices of the waveguide type
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H01P5/02 1 with invariable factor of coupling (H01P5/12 takes precedence {choke joints H01P1/04, H01P1/06})
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H01P5/022 2 {Transitions between lines of the same kind and shape, but with different dimensions}
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H01P5/024 3 {between hollow waveguides}
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H01P5/026 3 {between coaxial lines}
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H01P5/028 3 {between strip lines}
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H01P5/04 1 with variable factor of coupling
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H01P5/08 1 for linking dissimilar lines or devices (H01P1/16, H01P5/04 take precedence; linking lines of the same kind but with different dimensions H01P5/02)
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H01P5/082 2 {Transitions between hollow waveguides of different shape, e.g. between a rectangular and a circular waveguide}
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H01P5/085 2 {Coaxial-line/strip-line transitions}
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H01P5/087 2 {Transitions to a dielectric waveguide}
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H01P5/10 2 for coupling balanced with unbalanced lines or devices
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H01P5/1007 3 {Microstrip transitions to Slotline or finline}
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H01P5/1015 3 {Coplanar line transitions to Slotline or finline}
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H01P5/1022 3 {Transitions to dielectric waveguide}
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H01P5/103 3 Hollow-waveguide/coaxial-line transitions
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H01P5/107 3 Hollow-waveguide/strip-line transitions
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H01P5/12 1 Coupling devices having more than two ports (H01P5/04 takes precedence)
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H01P5/16 2 Conjugate devices, i.e. devices having at least one port decoupled from one other port
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H01P5/18 3 consisting of two coupled guides, e.g. directional couplers
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H01P5/181 4 {the guides being hollow waveguides}
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H01P5/182 5 {the waveguides being arranged in parallel}
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H01P5/183 4 {at least one of the guides being a coaxial line}
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H01P5/184 4 {the guides being strip lines or microstrips}
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H01P5/185 5 {Edge coupled lines}
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H01P5/186 6 {Lange couplers}
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H01P5/187 5 {Broadside coupled lines}
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H01P5/188 4 {the guides being dielectric waveguides}
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H01P5/19 3 of the junction type
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H01P5/20 4 Magic-T junctions
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H01P5/22 4 Hybrid ring junctions
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H01P5/222 5 {180° rat race hybrid rings}
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H01P5/225 5 {180° reversed phase hybrid rings}
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H01P5/227 5 {90° branch line couplers}
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H01P7/00 0 Resonators of the waveguide type
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H01P7/005 1 {Helical resonators; Spiral resonators}
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H01P7/02 1 Lecher resonators
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H01P7/04 1 Coaxial resonators
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H01P7/06 1 Cavity resonators
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H01P7/065 2 {integrated in a substrate}
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H01P7/08 1 Strip line resonators
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H01P7/082 2 {Microstripline resonators (H01P7/088 takes precedence)}
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H01P7/084 2 {Triplate line resonators (H01P7/088 takes precedence)}
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H01P7/086 2 {Coplanar waveguide resonators (H01P7/088 takes precedence)}
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H01P7/088 2 {Tunable resonators}
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H01P7/10 1 Dielectric resonators
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H01P7/105 2 {Multimode resonators}
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H01P9/00 0 Delay lines of the waveguide type
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H01P9/003 1 {Delay equalizers}
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H01P9/006 1 {Meander lines}
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H01P9/02 1 Helical lines
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H01P9/04 1 Interdigital lines
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H01P11/00 0 Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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H01P11/001 1 {Manufacturing waveguides or transmission lines of the waveguide type}
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H01P11/002 2 {Manufacturing hollow waveguides}
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H01P11/003 2 {Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines}
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H01P11/005 2 {Manufacturing coaxial lines}
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H01P11/006 2 {Manufacturing dielectric waveguides}
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H01P11/007 1 {Manufacturing frequency-selective devices (resonators H01P11/008)}
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H01P11/008 1 {Manufacturing resonators}
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H01Q ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
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H01Q1/00 0 Details of, or arrangements associated with, antennas (arrangements for varying orientation of directional pattern H01Q3/00)
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H01Q1/002 1 {Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna}
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H01Q1/005 1 {Damping of vibrations; Means for reducing wind-induced forces}
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H01Q1/007 1 {specially adapted for indoor communication}
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H01Q1/02 1 Arrangements for de-icing; Arrangements for drying-out {; Arrangements for cooling; Arrangements for preventing corrosion}
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H01Q1/04 1 Adaptation for subterranean or subaqueous use
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H01Q1/06 1 Means for the lighting or illuminating of antennas, e.g. for purpose of warning
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H01Q1/08 1 Means for collapsing antennas or parts thereof (collapsible loop antennas H01Q7/02; means for collapsing H-antennas or Yagi antennas H01Q19/04)
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H01Q1/081 2 {Inflatable antennas}
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H01Q1/082 3 {Balloon antennas}
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H01Q1/084 2 {Pivotable antennas}
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H01Q1/085 2 {Flexible aerials; Whip aerials with a resilient base}
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H01Q1/087 3 {Extensible roll- up aerials}
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H01Q1/088 2 {Quick-releasable antenna elements}
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H01Q1/10 2 Telescopic elements
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H01Q1/103 3 {Latching means; ensuring extension or retraction thereof}
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H01Q1/106 3 {Means for locking or protecting against unauthorized extraction}
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H01Q1/12 1 Supports; Mounting means
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H01Q1/1207 2 {for fastening a rigid aerial element}
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H01Q1/1214 3 {through a wall}
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H01Q1/1221 3 {onto a wall}
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H01Q1/1228 3 {on a boom}
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H01Q1/1235 2 {Collapsible supports; Means for erecting a rigid antenna}
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H01Q1/1242 2 {Rigid masts specially adapted for supporting an aerial}
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H01Q1/125 2 {Means for positioning}
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H01Q1/1257 3 {using the received signal strength}
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H01Q1/1264 3 {Adjusting different parts or elements of an aerial unit}
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H01Q1/1271 2 {for mounting on windscreens}
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H01Q1/1278 3 {in association with heating wires or layers}
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H01Q1/1285 3 {with capacitive feeding through the windscreen}
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H01Q1/1292 2 {for mounting on balloons}
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H01Q1/14 2 for wire or other non-rigid radiating elements
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H01Q1/16 3 Strainers, spreaders, or spacers
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H01Q1/18 2 Means for stabilising antennas on an unstable platform
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H01Q1/185 3 {by electronic means}
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H01Q1/20 2 Resilient mountings
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H01Q1/22 2 by structural association with other equipment or articles
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H01Q1/2208 3 {associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems (methods or arrangements for sensing record carriers, e.g. for reading patterns G06K7/00; record carrier for use with machines and with at least a part designed to carry digital markings G06K19/00)}
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H01Q1/2216 4 {used in interrogator/reader equipment}
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H01Q1/2225 4 {used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal}
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H01Q1/2233 4 {used in consumption-meter devices, e.g. electricity, gas or water meters}
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H01Q1/2241 4 {used in or for vehicle tyres}
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H01Q1/225 3 {used in level-measurement devices, e.g. for level gauge measurement}
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H01Q1/2258 3 {used with computer equipment}
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H01Q1/2266 4 {disposed inside the computer}
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H01Q1/2275 4 {associated to expansion card or bus, e.g. in PCMCIA, PC cards, Wireless USB}
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H01Q1/2283 3 {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
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H01Q1/2291 3 {used in bluetooth or WI-FI devices of Wireless Local Area Networks [WLAN] (H01Q1/241 takes precedence; WLAN in general H04W)}
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H01Q1/24 3 with receiving set
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H01Q1/241 4 {used in mobile communications, e.g. GSM (H01Q1/247, H01Q1/248 take precedence)}
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H01Q1/242 5 {specially adapted for hand-held use}
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H01Q1/243 6 {with built-in antennas}
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H01Q1/244 7 {extendable from a housing along a given path}
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H01Q1/245 6 {with means for shaping the antenna pattern, e.g. in order to protect user against rf exposure}
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H01Q1/246 5 {specially adapted for base stations}
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H01Q1/247 4 {with frequency mixer, e.g. for direct satellite reception or Doppler radar}
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H01Q1/248 4 {provided with an AC/DC converting device, e.g. rectennas}
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H01Q1/26 3 with electric discharge tube
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H01Q1/27 1 Adaptation for use in or on movable bodies (H01Q1/08, H01Q1/12, H01Q1/18 take precedence)
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H01Q1/273 2 {Adaptation for carrying or wearing by persons or animals}
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H01Q1/276 3 {for mounting on helmets}
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H01Q1/28 2 Adaptation for use in or on aircraft, missiles, satellites, or balloons
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H01Q1/281 3 {Nose antennas}
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H01Q1/282 3 {Modifying the aerodynamic properties of the vehicle, e.g. projecting type aerials}
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H01Q1/283 4 {Blade, stub antennas}
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H01Q1/285 3 {Aircraft wire antennas (means for trailing H01Q1/30)}
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H01Q1/286 3 {substantially flush mounted with the skin of the craft}
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H01Q1/287 4 {integrated in a wing or a stabiliser}
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H01Q1/288 3 {Satellite antennas}
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H01Q1/30 3 Means for trailing antennas
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H01Q1/32 2 Adaptation for use in or on road or rail vehicles
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H01Q1/3208 3 {characterised by the application wherein the antenna is used}
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H01Q1/3216 4 {where the road or rail vehicle is only used as transportation means}
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H01Q1/3225 4 {Cooperation with the rails or the road}
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H01Q1/3233 4 {particular used as part of a sensor or in a security system, e.g. for automotive radar, navigation systems}
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H01Q1/3241 5 {particular used in keyless entry systems}
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H01Q1/325 3 {characterised by the location of the antenna on the vehicle}
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H01Q1/3258 4 {using the gutter of the vehicle; Means for clamping a whip aerial on the edge of a part of the vehicle}
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H01Q1/3266 4 {using the mirror of the vehicle}
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H01Q1/3275 4 {mounted on a horizontal surface of the vehicle, e.g. on roof, hood, trunk}
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H01Q1/3283 4 {side-mounted antennas, e.g. bumper-mounted, door-mounted (mounted on windscreens H01Q1/1271)}
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H01Q1/3291 4 {mounted in or on other locations inside the vehicle or vehicle body}
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H01Q1/34 2 Adaptation for use in or on ships, submarines, buoys or torpedoes (for subaqueous use H01Q1/04)
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H01Q1/36 1 Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence)
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H01Q1/362 2 {for broadside radiating helical antennas}
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H01Q1/364 2 {using a particular conducting material, e.g. superconductor}
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H01Q1/366 3 {using an ionized gas}
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H01Q1/368 3 {using carbon or carbon composite}
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H01Q1/38 2 formed by a conductive layer on an insulating support {(patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142)}
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H01Q1/40 1 Radiating elements coated with or embedded in protective material
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H01Q1/405 2 {Radome integrated radiating elements}
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H01Q1/42 1 Housings not intimately mechanically associated with radiating elements, e.g. radome
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H01Q1/421 2 {Means for correcting aberrations introduced by a radome}
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H01Q1/422 2 {comprising two or more layers of dielectric material (H01Q1/425 takes precedence)}
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H01Q1/424 3 {comprising a layer of expanded material}
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H01Q1/425 2 {comprising a metallic grid}
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H01Q1/427 2 {Flexible radomes}
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H01Q1/428 2 {Collapsible radomes; rotatable, tiltable radomes}
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H01Q1/44 1 using equipment having another main function to serve additionally as an antenna {, e.g. means for giving an antenna an aesthetic aspect}(H01Q1/27 - H01Q1/34 take precedence)
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H01Q1/46 2 Electric supply lines or communication lines
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H01Q1/48 1 Earthing means; Earth screens; Counterpoises
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H01Q1/50 1 Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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H01Q1/52 1 Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure (absorbing means H01Q17/00)
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H01Q1/521 2 {reducing the coupling between adjacent antennas}
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H01Q1/523 3 {between antennas of an array}
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H01Q1/525 3 {between emitting and receiving antennas}
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H01Q1/526 2 {Electromagnetic shields}
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H01Q1/528 2 {reducing the re-radiation of a support structure (in a parabolic reflector antenna H01Q19/023)}
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H01Q3/00 0 Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system {(means for positioning H01Q1/125)}
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H01Q3/005 1 {using remotely controlled antenna positioning or scanning}
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H01Q3/01 1 varying the shape of the antenna or antenna system
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H01Q3/02 1 using mechanical movement of antenna or antenna system as a whole
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H01Q3/04 2 for varying one co-ordinate of the orientation
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H01Q3/06 3 over a restricted angle
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H01Q3/08 2 for varying two co-ordinates of the orientation
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H01Q3/10 3 to produce a conical or spiral scan
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H01Q3/12 1 using mechanical relative movement between primary active elements and secondary devices of antennas or antenna systems
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H01Q3/14 2 for varying the relative position of primary active element and a refracting or diffracting device
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H01Q3/16 2 for varying relative position of primary active element and a reflecting device
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H01Q3/18 3 wherein the primary active element is movable and the reflecting device is fixed
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H01Q3/20 3 wherein the primary active element is fixed and the reflecting device is movable
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H01Q3/22 1 varying the orientation in accordance with variation of frequency of radiated wave
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H01Q3/24 1 varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching
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H01Q3/242 2 {Circumferential scanning}
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H01Q3/245 2 {in the focal plane of a focussing device}
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H01Q3/247 2 {by switching different parts of a primary active element}
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H01Q3/26 1 varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture ({H01Q3/12,} H01Q3/22, H01Q3/24 take precedence)
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H01Q3/2605 2 {Array of radiating elements provided with a feedback control over the element weights, e.g. adaptive arrays}
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H01Q3/2611 3 {Means for null steering; Adaptive interference nulling}
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H01Q3/2617 4 {Array of identical elements}
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H01Q3/2623 5 {composed of two antennas}
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H01Q3/2629 4 {Combination of a main antenna unit with an auxiliary antenna unit}
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H01Q3/2635 5 {the auxiliary unit being composed of a plurality of antennas}
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H01Q3/2641 6 {being secundary elements, e.g. reactively steered}
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H01Q3/2647 3 {Retrodirective arrays}
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H01Q3/2652 3 {Self-phasing arrays}
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H01Q3/2658 2 {Phased-array fed focussing structure}
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H01Q3/2664 2 {electrically moving the phase centre of a radiating element in the focal plane of a focussing device (switching H01Q3/245, phased-array feeds H01Q3/2658)}
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H01Q3/267 2 {Phased-array testing or checking devices}
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H01Q3/2676 2 {Optically controlled phased array}
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H01Q3/2682 2 {Time delay steered arrays}
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H01Q3/2688 3 {using acoustic or magnetostatic wave devices}
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H01Q3/2694 3 {using also variable phase-shifters (H01Q3/2688 takes precedence)}
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H01Q3/28 2 varying the amplitude
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H01Q3/30 2 varying the {relative} phase {between the radiating elements of an array (H01Q3/2605, H01Q3/2658, H01Q3/2682, H01Q3/44 take precedence)}
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H01Q3/32 3 by mechanical means
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H01Q3/34 3 by electrical means (active lenses or reflecting arrays H01Q3/46)
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H01Q3/36 4 with variable phase-shifters
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H01Q3/38 5 the phase-shifters being digital
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H01Q3/385 6 {Scan control logics}
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H01Q3/40 4 with phasing matrix
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H01Q3/42 4 using frequency-mixing {(H01Q3/2676 takes precedence)}
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H01Q3/44 1 varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
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H01Q3/443 2 {varying the phase velocity along a leaky transmission line (frequency scanning H01Q3/22; non-resonant leaky-waveguide or transmission-line aerials H01Q13/20)}
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H01Q3/446 2 {the radiating element being at the centre of one or more rings of auxiliary elements}
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H01Q3/46 2 Active lenses or reflecting arrays
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H01Q5/00 0 Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements (combinations of separate active antenna units operating in different wavebands and connected to a common feeder system H01Q21/30)
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H01Q5/10 1 Resonant antennas
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H01Q5/15 2 for operation of centre-fed antennas comprising one or more collinear, substantially straight or elongated active elements
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H01Q5/20 1 characterised by the operating wavebands
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H01Q5/22 2 RF wavebands combined with non-RF wavebands, e.g. infrared or optical
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H01Q5/25 2 Ultra-wideband [UWB] systems, e.g. multiple resonance systems; Pulse systems
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H01Q5/28 2 Arrangements for establishing polarisation or beam width over two or more different wavebands
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H01Q5/30 1 Arrangements for providing operation on different wavebands
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H01Q5/307 2 Individual or coupled radiating elements, each element being fed in an unspecified way
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H01Q5/314 3 using frequency dependent circuits or components, e.g. trap circuits or capacitors
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H01Q5/321 4 within a radiating element or between connected radiating elements
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H01Q5/328 4 between a radiating element and ground
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H01Q5/335 4 at the feed, e.g. for impedance matching
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H01Q5/342 3 for different propagation modes (H01Q5/314 takes precedence)
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H01Q5/35 4 using two or more simultaneously fed points
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H01Q5/357 4 using a single feed point
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H01Q5/364 5 Creating multiple current paths
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H01Q5/371 6 Branching current paths
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H01Q5/378 2 Combination of fed elements with parasitic elements
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H01Q5/385 3 Two or more parasitic elements
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H01Q5/392 3 the parasitic elements having dual-band or multi-band characteristics
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H01Q5/40 1 Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements
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H01Q5/42 2 using two or more imbricated arrays (H01Q5/49 takes precedence)
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H01Q5/45 2 using two or more feeds in association with a common reflecting, diffracting or refracting device
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H01Q5/47 3 with a coaxial arrangement of the feeds
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H01Q5/48 2 Combinations of two or more dipole type antennas
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H01Q5/49 3 with parasitic elements used for purposes other than for dual-band or multi-band, e.g. imbricated Yagi antennas
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H01Q5/50 1 Feeding or matching arrangements for broad-band or multi-band operation
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H01Q5/55 2 for horn or waveguide antennas
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H01Q7/00 0 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
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H01Q7/005 1 {with variable reactance for tuning the antenna}
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H01Q7/02 1 Collapsible antennas; Retractable antennas
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H01Q7/04 1 Screened antennas (H01Q7/02, H01Q7/06 take precedence)
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H01Q7/06 1 with core of ferromagnetic material (H01Q7/02 takes precedence)
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H01Q7/08 2 Ferrite rod or like elongated core
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H01Q9/00 0 Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
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H01Q9/005 1 {for radiating non-sinusoidal waves}
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H01Q9/02 1 Non-resonant antennas
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H01Q9/04 1 Resonant antennas
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H01Q9/0407 2 {Substantially flat resonant element parallel to ground plane, e.g. patch antenna (dipole H01Q9/285; monopole H01Q9/40)}
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H01Q9/0414 3 {in a stacked or folded configuration}
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H01Q9/0421 3 {with a shorting wall or a shorting pin at one end of the element (H01Q9/0414 takes precedence)}
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H01Q9/0428 3 {radiating a circular polarised wave}
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H01Q9/0435 4 {using two feed points}
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H01Q9/0442 3 {with particular tuning means}
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H01Q9/045 3 {with particular feeding means (for circular polarisation H01Q9/0428)}
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H01Q9/0457 4 {electromagnetically coupled to the feed line}
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H01Q9/0464 3 {Annular ring patch}
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H01Q9/0471 3 {Non-planar, stepped or wedge-shaped patch}
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H01Q9/0478 3 {with means for suppressing spurious modes, e.g. cross polarisation}
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H01Q9/0485 2 {Dielectric resonator antennas}
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H01Q9/0492 3 {circularly polarised}
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H01Q9/06 2 Details
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H01Q9/065 3 {Microstrip dipole antennas (patch antenna H01Q9/0407)}
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H01Q9/08 3 Junction boxes specially adapted for supporting adjacent ends of collinear rigid elements
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H01Q9/10 3 Junction boxes specially adapted for supporting adjacent ends of divergent elements
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H01Q9/12 4 adapted for adjustment of angle between elements
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H01Q9/14 3 Length of element or elements adjustable (telescopic elements H01Q1/10)
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H01Q9/145 4 {by varying the electrical length}
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H01Q9/16 2 with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole (H01Q9/44 takes precedence)
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H01Q9/18 3 Vertical disposition of the antenna
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H01Q9/20 3 Two collinear substantially straight active elements; Substantially straight single active elements (H01Q9/28 takes precedence)
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H01Q9/22 4 Rigid rod or equivalent tubular element or elements
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H01Q9/24 4 Shunt feed arrangements to single active elements, e.g. for delta matching
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H01Q9/26 3 with folded element or elements, the folded parts being spaced apart a small fraction of operating wavelength (resonant loop antennas H01Q7/00)
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H01Q9/265 4 {Open ring dipoles; Circular dipoles}
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H01Q9/27 4 Spiral antennas
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H01Q9/28 3 Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines (waveguide horns or mouths H01Q13/00; slot antennas H01Q13/00)
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H01Q9/285 4 {Planar dipole (H01Q9/065 takes precedence; patch antenna H01Q9/0407)}
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H01Q9/30 2 with feed to end of elongated active element, e.g. unipole (H01Q9/44 takes precedence)
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H01Q9/32 3 Vertical arrangement of element (H01Q9/40 takes precedence)
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H01Q9/34 4 Mast, tower, or like self-supporting or stay-supported antennas
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H01Q9/36 4 with top loading
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H01Q9/38 4 with counterpoise (with counterpoise comprising elongated elements coplanar with the active element H01Q9/44)
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H01Q9/40 3 Element having extended radiating surface
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H01Q9/42 3 with folded element, the folded parts being spaced apart a small fraction of the operating wavelength
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H01Q9/43 4 Scimitar antennas
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H01Q9/44 2 with a plurality of divergent straight elements, e.g. V-dipole, X-antenna; with a plurality of elements having mutually inclined substantially straight portions (combinations of two or more active elements H01Q21/00; turnstile antennas H01Q21/26)
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H01Q9/46 3 with rigid elements diverging from single point
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H01Q11/00 0 Electrically-long antennas having dimensions more than twice the shortest operating wavelength and consisting of conductive active radiating elements (leaky waveguides antennas or slot antennas H01Q13/00)
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H01Q11/02 1 Non-resonant antennas, e.g. travelling-wave antenna (Yagi antennas H01Q19/30)
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H01Q11/04 2 with parts bent, folded, shaped, screened or electrically loaded to obtain desired phase relation of radiation from selected sections of the antenna (H01Q11/06 – H01Q11/10 take precedence)
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H01Q11/06 2 Rhombic antennas; V-antennas
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H01Q11/08 2 Helical antennas
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H01Q11/083 3 {Tapered helical aerials, e.g. conical spiral aerials}
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H01Q11/086 3 {collapsible}
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H01Q11/10 2 Logperiodic antennas (H01Q11/08 takes precedence)
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H01Q11/105 3 {using a dielectric support}
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H01Q11/12 1 Resonant antennas
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H01Q11/14 2 with parts bent, folded, shaped or screened or with phasing impedances, to obtain desired phase relation of radiation from selected sections of the antenna or to obtain desired polarisation effect (H01Q11/20 takes precedence)
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H01Q11/16 3 in which the selected sections are collinear
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H01Q11/18 3 in which the selected sections are parallelly spaced
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H01Q11/20 2 V-antennas
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H01Q13/00 0 Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
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H01Q13/02 1 Waveguide horns
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H01Q13/0208 2 {Corrugated horns (waveguide mouth antenna with corrugated flange H01Q13/065; manufacturing details H01Q13/0283)}
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H01Q13/0216 3 {Dual-depth corrugated horns}
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H01Q13/0225 3 {of non-circular cross-section (H01Q13/0216 takes precedence)}
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H01Q13/0233 2 {Horns fed by a slotted waveguide array (biconical horns H01Q13/06)}
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H01Q13/0241 2 {radiating a circularly polarised wave (H01Q13/0258 takes precedence; polarisation converters H01Q15/244, in a waveguide H01P1/17)}
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H01Q13/025 2 {Multimode horn antennas; Horns using higher mode of propagation (H01Q13/0241 takes precedence; multiple beam H01Q25/04)}
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H01Q13/0258 3 {Orthomode horns (orthomode transducers H01P1/161)}
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H01Q13/0266 2 {provided with a flange or a choke}
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H01Q13/0275 2 {Ridged horns (slot-line radiating ends H01Q13/085)}
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H01Q13/0283 2 {Apparatus or processes specially provided for manufacturing horns}
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H01Q13/0291 3 {for corrugated horns}
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H01Q13/04 2 Biconical horns (biconical dipoles comprising two conical surfaces having collinear axes and adjacent apices and fed by a two-conductor transmission line H01Q9/28)
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H01Q13/06 1 Waveguide mouths (horns H01Q13/02)
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H01Q13/065 2 {provided with a flange or a choke}
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H01Q13/08 1 Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
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H01Q13/085 2 {Slot-line radiating ends}
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H01Q13/10 1 Resonant slot antennas
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H01Q13/103 2 {with variable reactance for tuning the antenna (tuning resonant circuits H03J)}
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H01Q13/106 2 {Microstrip slot antennas (patch antenna elements H01Q9/0407)}
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H01Q13/12 2 Longitudinally slotted cylinder antennas; Equivalent structures
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H01Q13/14 3 Skeleton cylinder antennas
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H01Q13/16 2 Folded slot antennas
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H01Q13/18 2 the slot being backed by, or formed in boundary wall of, a resonant cavity (longitudinally slotted cylinder H01Q13/12 ){; Open cavity antennas}
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H01Q13/20 1 Non-resonant leaky-waveguide or transmission-line antennas; Equivalent structures causing radiation along the transmission path of a guided wave
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H01Q13/203 2 {Leaky coaxial lines}
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H01Q13/206 2 {Microstrip transmission line antennas}
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H01Q13/22 2 Longitudinal slot in boundary wall of waveguide or transmission line {(H01Q13/203 takes precedence)}
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H01Q13/24 2 constituted by a dielectric or ferromagnetic rod or pipe (H01Q13/28 takes precedence)
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H01Q13/26 2 Surface waveguide constituted by a single conductor, e.g. strip conductor
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H01Q13/28 2 comprising elements constituting electric discontinuities and spaced in direction of wave propagation, e.g. dielectric elements or conductive elements forming artificial dielectric
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H01Q15/00 0 Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices (variable for purpose of altering directivity H01Q3/00; arrangements of such devices for guiding waves H01P3/20; variable for purpose of modulation H03C7/02)
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H01Q15/0006 1 {Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices (H01Q15/12, H01Q15/22, H01Q15/24 take precedence)}
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H01Q15/0013 2 {said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective}
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H01Q15/002 3 {said selective devices being reconfigurable or tunable, e.g. using switches or diodes}
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H01Q15/0026 3 {said selective devices having a stacked geometry or having multiple layers}
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H01Q15/0033 3 {used for beam splitting or combining, e.g. acting as a quasi-optical multiplexer (H01Q19/191 and H01Q19/195 take precedence)}
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H01Q15/004 3 {using superconducting materials or magnetised substrates}
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H01Q15/0046 3 {Theoretical analysis and design methods of such selective devices}
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H01Q15/0053 2 {Selective devices used as spatial filter or angular sidelobe filter}
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H01Q15/006 2 {Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces}
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H01Q15/0066 3 {said selective devices being reconfigurable, tunable or controllable, e.g. using switches}
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H01Q15/0073 3 {said selective devices having corrugations}
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H01Q15/008 3 {said selective devices having Sievenpipers' mushroom elements}
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H01Q15/0086 2 {said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials}
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H01Q15/0093 2 {having a fractal shape}
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H01Q15/02 1 Refracting or diffracting devices, e.g. lens, prism
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H01Q15/04 2 comprising wave-guiding channel or channels bounded by effective conductive surfaces substantially perpendicular to the electric vector of the wave, e.g. parallel-plate waveguide lens
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H01Q15/06 2 comprising plurality of wave-guiding channels of different length
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H01Q15/08 2 formed of solid dielectric material
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H01Q15/10 2 comprising three-dimensional array of impedance discontinuities, e.g. holes in conductive surfaces or conductive discs forming artificial dielectric
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H01Q15/12 2 functioning also as polarisation filter {(polarisation converters H01Q15/242)}
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H01Q15/14 1 Reflecting surfaces; Equivalent structures {(electromagnetic shields H01Q1/526)}
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H01Q15/141 2 {Apparatus or processes specially adapted for manufacturing reflecting surfaces}
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H01Q15/142 3 {using insulating material for supporting the reflecting surface}
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H01Q15/144 4 {with a honeycomb, cellular or foamed sandwich structure}
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H01Q15/145 2 {comprising a plurality of reflecting particles, e.g. radar chaff (missiles of the signal type provided with means for disseminating radar-reflecting chaff F42B12/70)}
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H01Q15/147 2 {provided with means for controlling or monitoring the shape of the reflecting surface (for scanning H01Q3/01; aerials or aerial systems providing multiple beamwidths H01Q25/002)}
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H01Q15/148 2 {with means for varying the reflecting properties (H01Q15/147 takes precedence)}
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H01Q15/16 2 curved in two dimensions, e.g. paraboloidal
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H01Q15/161 3 {Collapsible reflectors}
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H01Q15/162 4 {composed of a plurality of rigid panels}
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H01Q15/163 4 {inflatable}
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H01Q15/165 3 {composed of a plurality of rigid panels (collapsible H01Q15/161)}
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H01Q15/166 4 {sector shaped}
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H01Q15/167 4 {comprising a gap between adjacent panels or group of panels, e.g. stepped reflectors}
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H01Q15/168 3 {Mesh reflectors mounted on a non-collapsible frame}
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H01Q15/18 2 comprising plurality of mutually inclined plane surfaces, e.g. corner reflector {(H01Q15/16 takes precedence)}
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H01Q15/20 3 Collapsible reflectors
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H01Q15/22 2 functioning also as polarisation filter
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H01Q15/23 1 Combinations of reflecting surfaces with refracting or diffracting devices
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H01Q15/24 1 Polarising devices; Polarisation filters (H01Q15/12, H01Q15/22 take precedence)
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H01Q15/242 2 {Polarisation converters}
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H01Q15/244 3 {converting a linear polarised wave into a circular polarised wave (guided wave H01P1/17)}
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H01Q15/246 3 {rotating the plane of polarisation of a linear polarised wave (guided wave H01P1/165)}
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H01Q15/248 4 {using a reflecting surface, e.g. twist reflector (combination with a polarisation filter in dual reflector antennas H01Q19/195)}
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H01Q17/00 0 Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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H01Q17/001 1 {for modifying the directional characteristic of an aerial}
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H01Q17/002 1 {using short elongated elements as dissipative material, e.g. metallic threads or flake-like particles}
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H01Q17/004 1 {using non-directional dissipative particles, e.g. ferrite powders (H01Q17/005 takes precedence; flake-like H01Q17/002)}
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H01Q17/005 1 {using woven or wound filaments; impregnated nets or clothes}
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H01Q17/007 1 {with means for controlling the absorption}
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H01Q17/008 1 {with a particular shape (H01Q17/007 takes precedence)}
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H01Q19/00 0 Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic {(combination of horns with slotted waveguide array H01Q13/0233)}
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H01Q19/005 1 {Patch antenna using one or more coplanar parasitic elements}
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H01Q19/02 1 Details {(fastening of an element on a boom H01Q1/1228)}
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H01Q19/021 2 {Means for reducing undesirable effects}
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H01Q19/022 3 {for reducing the edge scattering of reflectors}
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H01Q19/023 3 {for reducing the scattering of mounting structures, e.g. of the struts}
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H01Q19/025 3 {for optimizing the matching of the primary feed, e.g. vertex plates}
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H01Q19/026 3 {for reducing the primary feed spill-over}
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H01Q19/027 3 {for compensating or reducing aperture blockage (offset feeding H01Q19/132, H01Q19/192)}
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H01Q19/028 3 {for reducing the cross polarisation}
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H01Q19/04 2 Means for collapsing H-antennas or Yagi antennas
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H01Q19/06 1 using refracting or diffracting devices, e.g. lens {(radome H01Q1/42)}
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H01Q19/062 2 {for focusing}
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H01Q19/065 3 {Zone plate type antennas}
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H01Q19/067 2 {using a hologram}
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H01Q19/08 2 for modifying the radiation pattern of a radiating horn in which it is located {(corrugated horns H01Q13/0208; producing a circular polarisation H01Q13/0241)}
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H01Q19/09 2 wherein the primary active element is coated with or embedded in a dielectric or magnetic material (protective material H01Q1/40, varying the electric or magnetic characteristics of refracting or diffracting devices H01Q3/44)
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H01Q19/10 1 using reflecting surfaces
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H01Q19/102 2 {wherein the surfaces are of convex toroïdal shape (biconical horns H01Q13/04)}
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H01Q19/104 2 {using a substantially flat reflector for deflecting the radiated beam, e.g. periscopic antennas (periscopic fed Cassegrain antennas H01Q19/191; passive relays H04B7/145)}
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H01Q19/106 2 {using two or more intersecting plane surfaces, e.g. corner reflector antennas}
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H01Q19/108 2 {Combination of a dipole with a plane reflecting surface (H01Q19/106 takes precedence; strip line H01Q9/065)}
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H01Q19/12 2 wherein the surfaces are concave (H01Q19/18 takes precedence)
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H01Q19/13 3 the primary radiating source being a single radiating element, e.g. a dipole, a slot, a waveguide termination (H01Q19/15 takes precedence)
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H01Q19/132 4 {Horn reflector antennas; Off-set feeding}
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H01Q19/134 4 {Rear-feeds; Splash plate feeds}
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H01Q19/136 5 {cross-polarised}
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H01Q19/138 4 {Parallel-plate feeds, e.g. pill-box, cheese aerials}
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H01Q19/15 3 the primary radiating source being a line source, e.g. leaky waveguide antennas
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H01Q19/17 3 the primary radiating source comprising two or more radiating elements (H01Q19/15, H01Q25/00 take precedence)
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H01Q19/175 4 {arrayed along the focal line of a cylindrical focusing surface}
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H01Q19/18 2 having two or more spaced reflecting surfaces (H01Q19/20 takes precedence)
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H01Q19/185 3 wherein the surfaces are plane
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H01Q19/19 3 comprising one main concave reflecting surface associated with an auxiliary reflecting surface
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H01Q19/191 4 {wherein the primary active element uses one or more deflecting surfaces, e.g. beam waveguide feeds}
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H01Q19/192 4 {with dual offset reflectors}
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H01Q19/193 4 {with feed supported subreflector (splash plate feeds H01Q19/134)}
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H01Q19/195 4 wherein a reflecting surface acts also as a polarisation filter or a polarising device
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H01Q19/20 1 Producing pencil beam by two cylindrical focusing devices with their focal lines orthogonally disposed
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H01Q19/22 1 using a secondary device in the form of a single substantially straight conductive element
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H01Q19/24 2 the primary active element being centre-fed and substantially straight, e.g. H-antenna
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H01Q19/26 2 the primary active element being end-fed and elongated
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H01Q19/28 1 using a secondary device in the form of two or more substantially straight conductive elements (log- periodic antennas H01Q11/10; constituting a reflecting surface H01Q19/10)
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H01Q19/30 2 the primary active element being centre-fed and substantially straight, e.g. Yagi antenna
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H01Q19/32 2 the primary active element being end-fed and elongated
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H01Q21/00 0 Antenna arrays or systems (arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system H01Q3/00)
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H01Q21/0006 1 {Particular feeding systems}
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H01Q21/0012 2 {Radial guide fed arrays}
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H01Q21/0018 2 {Space- fed arrays}
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H01Q21/0025 2 {Modular arrays}
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H01Q21/0031 2 {Parallel-plate fed arrays; Lens-fed arrays (multibeam arrays H01Q25/008)}
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H01Q21/0037 2 {linear waveguide fed arrays}
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H01Q21/0043 3 {Slotted waveguides (combination with horns H01Q13/0233)}
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H01Q21/005 4 {Slotted waveguides arrays}
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H01Q21/0056 5 {Conically or cylindrically arrayed}
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H01Q21/0062 4 {the slots being disposed around the feeding waveguide}
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H01Q21/0068 3 {Dielectric waveguide fed arrays}
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H01Q21/0075 2 {Stripline fed arrays (H01Q21/065 takes precedence)}
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H01Q21/0081 3 {using suspended striplines}
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H01Q21/0087 1 {Apparatus or processes specially adapted for manufacturing antenna arrays (manufacturing waveguides H01P11/00)}
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H01Q21/0093 2 {Monolithic arrays}
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H01Q21/06 1 Arrays of individually energised antenna units similarly polarised and spaced apart
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H01Q21/061 2 {Two dimensional planar arrays}
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H01Q21/062 3 {using dipole aerials; (H01Q21/067, H01Q21/068 take precedence)}
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H01Q21/064 3 {using horn or slot aerials (slotted waveguides arrays H01Q21/005)}
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H01Q21/065 3 {Patch antenna array}
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H01Q21/067 3 {using endfire radiating aerial units transverse to the plane of the array}
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H01Q21/068 3 {using parallel coplanar travelling wave or leaky wave aerial units (H01Q21/065 takes precedence)}
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H01Q21/08 2 the units being spaced along or adjacent to a rectilinear path {(waveguide fed H01Q21/0037)}
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H01Q21/10 3 Collinear arrangements of substantially straight elongated conductive units
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H01Q21/12 3 Parallel arrangements of substantially straight elongated conductive units (travelling-wave antennas comprising transmission line loaded with transverse elements H01Q11/02; Yagi antennas H01Q19/30)
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H01Q21/14 4 Adcock antennas
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H01Q21/16 5 U-type
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H01Q21/18 5 H-type
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H01Q21/20 2 the units being spaced along or adjacent to a curvilinear path {(slotted waveguide arrays H01Q21/005; circularly or helically slotted waveguides H01Q21/0062)}
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H01Q21/205 3 {providing an omnidirectional coverage (turnstile aerials H01Q21/26)}
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H01Q21/22 2 Antenna units of the array energised non-uniformly in amplitude or phase, e.g. tapered array or binomial array
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H01Q21/225 3 {Finite focus antenna arrays}
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H01Q21/24 1 Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction {(circularly polarised patch antennas H01Q9/0428; circularly polarised horns H01Q13/0241; cross-polarised horns H01Q13/0258; polarisation converters H01Q15/242; cross-polarised rear feeds H01Q19/136; crossed polarisation dual antenna H01Q25/001)}
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H01Q21/245 2 {provided with means for varying the polarisation (polarising devices H01Q15/24; tracking by comparing linear polarisation compounds G01S3/146; reducing depolarisation effects H04B7/00 polarisation diversity H04B7/10)}
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H01Q21/26 2 Turnstile or like antennas comprising arrangements of three or more elongated elements disposed radially and symmetrically in a horizontal plane about a common centre
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H01Q21/28 1 Combinations of substantially independent non-interacting antenna units or systems {(multiple beam H01Q25/00)}
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H01Q21/29 1 Combinations of different interacting antenna units for giving a desired directional characteristic (H01Q25/00 takes precedence)
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H01Q21/293 2 {one unit or more being an array of identical aerial elements (adaptive arrays H01Q3/2605)}
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H01Q21/296 3 {Multiplicative arrays}
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H01Q21/30 1 Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
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H01Q23/00 0 Antennas with active circuits or circuit elements integrated within them or attached to them
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H01Q25/00 0 Antennas or antenna systems providing at least two radiating patterns (arrangements for changing or varying the orientation or the shape of the directional pattern H01Q3/00)
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H01Q25/001 1 {Crossed polarisation dual antennas (orthomode horns H01Q13/0258; cross-polarised rear feeds H01Q19/136; orthomode transducers H01P1/161)}
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H01Q25/002 1 {providing at least two patterns of different beamwidth; Variable beamwidth antennas}
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H01Q25/004 1 {providing two or four symmetrical beams for Janus application}
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H01Q25/005 1 {providing two patterns of opposite direction; back to back antennas (H01Q25/004 takes precedence)}
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H01Q25/007 1 {using two or more primary active elements in the focal region of a focusing device (for operation on different wavebands H01Q5/22)}
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H01Q25/008 2 {lens fed multibeam arrays}
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H01Q25/02 1 providing sum and difference patterns (H01Q25/04 takes precedence)
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H01Q25/04 1 Multimode antennas {(corrugated horns H01Q13/0208)}
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H01R ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
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H01R3/00 0 Electrically-conductive connections not otherwise provided for
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H01R3/08 1 for making connection to a liquid {(slip rings with liquid contacts H01R39/30, H01R39/646)}
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H01R4/00 0 Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
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H01R4/01 1 Connections using shape memory materials, e.g. shape memory metal
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H01R4/02 1 Soldered or welded connections {(H01R4/625, H01R4/723, H01R12/59 take precedence)}
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H01R4/021 2 {between two or more cables or wires}
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H01R4/022 3 {comprising preapplied solder}
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H01R4/023 2 {between cables or wires and terminals}
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H01R4/024 3 {comprising preapplied solder}
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H01R4/025 2 {with built-in heat generating elements}
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H01R4/026 2 {comprising means for eliminating an insulative layer prior to soldering or welding}
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H01R4/027 2 {comprising means for positioning or holding the parts to be soldered or welded}
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H01R4/028 2 {comprising means for preventing flowing or wicking of solder or flux in parts not desired}
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H01R4/029 2 {Welded connections (H01R4/021 - H01R4/028 take precedence)}
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H01R4/04 1 using electrically conductive adhesives
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H01R4/06 1 Riveted connections (by explosion H01R4/08)
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H01R4/08 1 effected by an explosion
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H01R4/10 1 effected solely by twisting, wrapping, bending, crimping, or other permanent deformation
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H01R4/12 2 by twisting
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H01R4/14 2 by wrapping
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H01R4/16 2 by bending
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H01R4/18 2 by crimping {(H01R4/01, H01R4/2495 take precedence; for coaxial cables H01R9/0518)}
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H01R4/182 3 {for flat conductive elements, e.g. flat cables (H01R4/01 takes precedence)}
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H01R4/183 3 {for cylindrical elongated bodies, e.g. cables having circular cross-section (H01R4/01 takes precedence)}
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H01R4/184 4 {comprising a U-shaped wire-receiving portion}
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H01R4/185 5 {combined with a U-shaped insulation-receiving portion}
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H01R4/186 4 {using a body comprising a plurality of cable-accommodating recesses or bores}
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H01R4/187 3 {combined with soldering or welding}
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H01R4/188 3 {having an uneven wire-receiving surface to improve the contact}
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H01R4/20 3 using a crimping sleeve {(H01R4/01 takes precedence)}
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H01R4/203 4 {having an uneven wire-receiving surface to improve the contact}
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H01R4/206 5 {with transversal grooves or threads}
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H01R4/22 1 End caps, i.e. of insulating or conductive material for covering or maintaining connections between wires entering the cap from the same end
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H01R4/24 1 Connections using contact members penetrating or cutting insulation or cable strands
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H01R4/2404 2 the contact members having teeth, prongs, pins or needles penetrating the insulation
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H01R4/2406 3 having needles or pins
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H01R4/2407 3 having saw-tooth projections
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H01R4/2408 3 actuated by clamping screws
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H01R4/2412 3 actuated by insulated cams or wedges
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H01R4/2416 2 the contact members having insulation-cutting edges, e.g. of tuning fork type
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H01R4/242 3 the contact members being plates having a single slot
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H01R4/2425 4 Flat plates, e.g. multi-layered flat plates
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H01R4/2429 5 mounted in an insulating base
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H01R4/2433 6 one part of the base being movable to push the cable into the slot
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H01R4/2437 4 Curved plates
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H01R4/2441 5 tube-shaped
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H01R4/2445 3 the contact members having additional means acting on the insulation or the wire, e.g. additional insulation penetrating means, strain relief means or wire cutting knives
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H01R4/245 4 the additional means having two or more slotted flat portions
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H01R4/2452 5 in serial configuration, e.g. opposing folded slots
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H01R4/2454 5 forming a U-shape with slotted branches
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H01R4/2455 6 forming a slotted bight
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H01R4/2456 5 in parallel configuration
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H01R4/2458 4 the contact members being in a slotted tubular configuration, e.g. slotted tube-end
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H01R4/2462 4 the contact members being in a slotted bent configuration, e.g. slotted bight
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H01R4/2466 4 the contact members having a channel-shaped part, the opposite sidewalls of which comprise insulation-cutting means
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H01R4/247 2 the contact members penetrating the insulation being actuated by springs
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H01R4/2475 2 the contact members penetrating the insulation being actuated by screws, nuts or bolts
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H01R4/2479 3 penetrating the area under the screw head
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H01R4/2483 3 penetrating the area under the screw tip
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H01R4/2487 3 penetrating by means of the screw thread
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H01R4/2491 2 the contact members penetrating the insulation being actuated by conductive cams or wedges
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H01R4/2495 2 Insulation penetration combined with permanent deformation of the contact member, e.g. crimping
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H01R4/26 1 Connections in which at least one of the connecting parts has projections which bite into or engage the other connecting part in order to improve the contact ({H01R4/188, H01R4/203, H01R4/5075 take precedence}; using shape memory materials H01R4/01)
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H01R4/28 1 Clamped connections, spring connections (made by means of terminals specially adapted for contact with, or insertion into, printed circuits H01R12/00)
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H01R4/30 2 utilising a screw or nut clamping member (H01R4/50 takes precedence; utilising a clamping member acted on by screw or nut H01R4/38; {for coaxial cables H01R9/0521})
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H01R4/301 3 {having means for preventing complete unscrewing of screw or nut}
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H01R4/302 3 {having means for preventing loosening of screw or nut, e.g. vibration-proof connection}
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H01R4/304 3 {having means for improving contact}
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H01R4/305 3 {having means for facilitating engagement of conductive member or for holding it in position}
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H01R4/307 3 {characterised by the thread of the screw or nut}
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H01R4/308 3 {Conductive members located parallel to axis of screw}
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H01R4/32 3 Conductive members located in slot or hole in screw
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H01R4/34 3 Conductive members located under head of screw
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H01R4/36 3 Conductive members located under tip of screw
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H01R4/363 4 {with intermediate part between tip and conductive member}
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H01R4/366 5 {intermediate part attached to the tip of the screw}
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H01R4/38 2 utilising a clamping member acted on by screw or nut (H01R4/50 takes precedence)
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H01R4/40 3 Pivotable clamping member
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H01R4/42 3 Clamping area to one side of screw only
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H01R4/44 3 Clamping areas on both sides of screw
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H01R4/46 3 Clamping area between two screws placed side by side
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H01R4/48 2 utilising a spring, clip, or other resilient member (H01R4/52 takes precedence)
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H01R4/4809 3 {using a leaf spring}
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H01R4/4818 4 {adapted for axial insertion of a wire end}
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H01R4/4827 5 {with an opening in the housing for insertion of a release tool}
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H01R4/4836 5 {with integral release means}
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H01R4/4845 4 {insertion of a wire only possible by pressing on the spring}
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H01R4/4854 3 {using a wire spring}
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H01R4/4863 4 {Coil spring}
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H01R4/4872 5 {axially compressed to retain wire end}
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H01R4/4881 3 {using a louver type spring}
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H01R4/489 3 {spring force increased by screw, cam, wedge, or other fastening means}
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H01R4/50 2 utilising a cam, wedge, cone or ball {also combined with a screw}
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H01R4/5008 3 {using rotatable cam}
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H01R4/5016 3 {using a cone}
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H01R4/5025 4 {combined with a threaded ferrule operating in a direction parallel to the conductor}
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H01R4/5033 3 {using wedge or pin penetrating into the end of a wire in axial direction of the wire}
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H01R4/5041 3 {using a tapered groove}
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H01R4/505 3 {using an excentric element}
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H01R4/5058 3 {using a ball}
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H01R4/5066 3 {mounted in an insulating housing having a cover providing clamping force}
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H01R4/5075 3 {having an uneven wire receiving surface to improve the contact}
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H01R4/5083 3 {using a wedge}
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H01R4/5091 4 {combined with a screw}
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H01R4/52 3 which is spring loaded
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H01R4/54 1 {Bayonet or keyhole}
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H01R4/56 1 one conductor screwing into another
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H01R4/58 1 characterised by the form or material of the contacting members (H01R4/01 takes precedence)
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H01R4/60 2 Connections between or with tubular conductors (H01R4/56 takes precedence)
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H01R4/62 2 Connections between conductors of different materials; Connections between or with aluminium or steel-core aluminium conductors (H01R4/68 takes precedence)
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H01R4/625 3 {Soldered or welded connections}
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H01R4/64 2 Connections between or with conductive parts having primarily a non-electric function, e.g. frame, casing, rail
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H01R4/643 3 {for rigid cylindrical bodies}
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H01R4/646 3 {for cables or flexible cylindrical bodies}
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H01R4/66 2 Connections with the terrestrial mass, e.g. earth plate, earth pin
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H01R4/68 2 Connections to or between superconductive connectors
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H01R4/70 1 Insulation of connections (end caps H01R4/22)
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H01R4/72 2 using a heat shrinking insulating sleeve
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H01R4/723 3 {Making a soldered electrical connection simultaneously with the heat shrinking}
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H01R4/726 3 {Making a non-soldered electrical connection simultaneously with the heat shrinking}
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H01R9/00 0 Structural associations of a plurality of mutually-insulated electrical connecting elements, e.g. terminal strips or terminal blocks; Terminals or binding posts mounted upon a base or in a case; Bases therefor
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H01R9/03 1 Connectors arranged to contact a plurality of the conductors of a multiconductor cable {, e.g. tapping connections}
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H01R9/031 2 {for multiphase cables, e.g. with contact members penetrating insulation of a plurality of conductors (insulation penetrating contact members in general H01R4/24)}
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H01R9/05 2 for coaxial cables
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H01R9/0503 3 {Connection between two cable ends}
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H01R9/0506 3 {Connection between three or more cable ends}
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H01R9/0509 3 {Tapping connections}
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H01R9/0512 3 {Connections to an additional grounding conductor}
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H01R9/0515 3 {Connection to a rigid planar substrate, e.g. printed circuit board}
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H01R9/0518 3 {Connection to outer conductor by crimping or by crimping ferrule}
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H01R9/0521 3 {Connection to outer conductor by action of a nut}
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H01R9/0524 3 {Connection to outer conductor by action of a clamping member, e.g. screw fastening means (H01R9/0515 takes precedence)}
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H01R9/0527 3 {Connection to outer conductor by action of a resilient member, e.g. spring}
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H01R9/053 3 using contact members penetrating insulation
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H01R9/11 1 End pieces for multiconductor cables supported by the cable and for facilitating connections to other conductive members {, e.g. for liquid cooled welding cables}
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H01R9/15 1 Connectors for wire wrapping
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H01R9/16 1 Fastening of connecting parts to base or case; Insulating connecting parts from base or case
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H01R9/18 2 Fastening by means of screw or nut
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H01R9/20 2 Fastening by means of rivet or eyelet
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H01R9/22 1 Bases, e.g. strip, block, panel {(for printed circuits H01R12/50)}
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H01R9/223 2 {Insulating enclosures for terminals (for switches H01H9/0264)}
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H01R9/226 2 {comprising a plurality of conductive flat strips providing connection between wires or components (H01R9/2425 takes precedence)}
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H01R9/24 2 Terminal blocks
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H01R9/2408 3 {Modular blocks (H01R9/26 takes precedence)}
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H01R9/2416 3 {Means for guiding or retaining wires or cables connected to terminal blocks}
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H01R9/2425 3 {Structural association with built-in components (for coupling parts H01R13/66)}
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H01R9/2433 4 {with built-in switch}
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H01R9/2441 4 {with built-in overvoltage protection}
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H01R9/245 4 {with built-in fuse}
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H01R9/2458 3 {Electrical interconnections between terminal blocks}
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H01R9/2466 4 {using a planar conductive structure, e.g. printed circuit board}
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H01R9/2475 3 {Means facilitating correct wiring, e.g. marking plates, identification tags}
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H01R9/2483 3 {specially adapted for ground connection}
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H01R9/2491 3 {Terminal blocks structurally associated with plugs or sockets}
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H01R9/26 3 Clip-on terminal blocks for side-by-side rail- or strip-mounting
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H01R9/2608 4 {Fastening means for mounting on support rail or strip (H01R9/2691 takes precedence; for switch or other electrical device H02B1/042)}
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H01R9/2616 4 {End clamping members}
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H01R9/2625 4 {with built-in electrical component}
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H01R9/2633 5 {with built-in switch}
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H01R9/2641 5 {with built-in overvoltage protection}
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H01R9/265 5 {with built-in fuse}
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H01R9/2658 5 {with built-in data-bus connection}
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H01R9/2666 5 {with built-in test-points}
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H01R9/2675 4 {Electrical interconnections between two blocks, e.g. by means of busbars}
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H01R9/2683 4 {Marking plates or tabs}
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H01R9/2691 4 {with ground wire connection to the rail}
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H01R9/28 2 Terminal boards
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H01R11/00 0 Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
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H01R11/01 1 characterised by the form or arrangement of the conductive interconnection between the connecting locations
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H01R11/03 1 characterised by the relationship between the connecting locations (H01R11/11 takes precedence)
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H01R11/05 2 the connecting locations having different types of direct connections
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H01R11/07 2 the connecting locations being of the same type but different sizes
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H01R11/09 2 the connecting locations being identical
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H01R11/11 1 End pieces or tapping pieces for wires, supported by the wire and for facilitating electrical connection to some other wire, terminal or conductive member (H01R11/01 takes precedence)
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H01R11/12 2 End pieces terminating in an eye, hook, or fork
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H01R11/14 3 the hook being adapted for hanging on overhead or other suspended lines, e.g. hot line clamp
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H01R11/15 4 Hook in the form of a screw clamp
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H01R11/16 2 End pieces terminating in a soldering tip or socket
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H01R11/18 2 End pieces terminating in a probe
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H01R11/20 2 End pieces terminating in a needle point or analogous contact for penetrating insulation or cable strands
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H01R11/22 2 End pieces terminating in a spring clip
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H01R11/24 3 with gripping jaws, e.g. crocodile clip
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H01R11/26 2 End pieces terminating in a screw clamp, screw or nut
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H01R11/28 2 End pieces consisting of a ferrule or sleeve
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H01R11/281 3 {for connections to batteries}
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H01R11/282 4 {comprising means for facilitating engagement or disengagement, e.g. quick release terminal}
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H01R11/283 4 {Bolt, screw or threaded ferrule parallel to the battery post}
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H01R11/284 4 {comprising means for preventing corrosion, e.g. covers, enclosures filled with gel}
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H01R11/285 4 {Battery post and cable secured by the same locking means}
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H01R11/286 4 {having means for improving contact between battery post and clamping member, e.g. uneven interior surface}
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H01R11/287 4 {Intermediate parts between battery post and cable end piece}
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H01R11/288 4 {Interconnections between batteries}
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H01R11/289 4 {characterised by the shape or the structure of the battery post}
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H01R11/30 2 End pieces held in contact by a magnet
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H01R11/32 2 End pieces with two or more terminations
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H01R12/00 0 Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures (printed connections to, or between, printed circuits H05K1/11)
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H01R12/50 1 Fixed connections
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H01R12/51 2 for rigid printed circuits or like structures
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H01R12/515 3 {Terminal blocks providing connections to wires or cables}
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H01R12/52 3 connecting to other rigid printed circuits or like structures
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H01R12/523 4 {by an interconnection through aligned holes in the boards or multilayer board}
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H01R12/526 4 {the printed circuits being on the same board (with plated through holes H05K3/42)}
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H01R12/53 3 connecting to cables except for flat or ribbon cables
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H01R12/55 3 characterised by the terminals
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H01R12/57 4 surface mounting terminals
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H01R12/58 4 terminals for insertion into holes
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H01R12/585 5 {Terminals having a press fit or a compliant portion and a shank passing through a hole in the printed circuit board}
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H01R12/59 2 for flexible printed circuits, flat or ribbon cables or like structures
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H01R12/592 3 {connections to contact elements}
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H01R12/594 3 {for shielded flat cable}
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H01R12/596 4 {Connection of the shield to an additional grounding conductor, e.g. drain wire}
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H01R12/598 4 {Each conductor being individually surrounded by shield, e.g. multiple coaxial cables in flat structure}
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H01R12/61 3 connecting to flexible printed circuits, flat or ribbon cables or like structures
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H01R12/613 4 {by means of interconnecting elements}
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H01R12/616 5 {having contacts penetrating insulation for making contact with conductors, e.g. needle points}
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H01R12/62 3 connecting to rigid printed circuits or like structures
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H01R12/63 3 connecting to another shape cable
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H01R12/65 3 characterised by the terminal
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H01R12/67 4 insulation penetrating terminals
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H01R12/675 5 {with contacts having at least a slotted plate for penetration of cable insulation, e.g. insulation displacement contacts for round conductor flat cables}
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H01R12/68 5 comprising deformable portions
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H01R12/69 4 deformable terminals, e.g. crimping terminals
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H01R12/70 1 Coupling devices
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H01R12/7005 2 {Guiding, mounting, polarizing or locking means; Extractors (for printed circuit boards H05K)}
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H01R12/7011 3 {Locking or fixing a connector to a PCB}
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H01R12/7017 4 {Snap means}
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H01R12/7023 5 {integral with the coupling device}
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H01R12/7029 5 {not integral with the coupling device}
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H01R12/7035 4 {involving non-elastic deformation, e.g. plastic deformation, melting (H01R12/7064 takes precedence)}
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H01R12/7041 4 {Gluing or taping}
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H01R12/7047 4 {with a fastener through a screw hole in the coupling device}
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H01R12/7052 4 {characterised by the locating members}
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H01R12/7058 4 {characterised by the movement, e.g. pivoting, camming or translating parallel to the PCB}
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H01R12/7064 4 {Press fitting}
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H01R12/707 4 {Soldering or welding}
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H01R12/7076 2 {for connection between PCB and component, e.g. display}
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H01R12/7082 2 {Coupling device supported only by cooperation with PCB}
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H01R12/7088 2 {Arrangements for power supply}
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H01R12/7094 2 {with switch operated by engagement of PCB}
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H01R12/71 2 for rigid printing circuits or like structures
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H01R12/712 3 {co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit (H01R12/72 takes precedence)}
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H01R12/714 4 {with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit}
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H01R12/716 4 {Coupling device provided on the PCB}
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H01R12/718 5 {Contact members provided on the PCB without an insulating housing (contacts for abutting H01R12/714)}
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H01R12/72 3 coupling with the edge of the rigid printed circuits or like structures
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H01R12/721 4 {cooperating directly with the edge of the rigid printed circuits}
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H01R12/722 4 {coupling devices mounted on the edge of the printed circuits}
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H01R12/724 5 {containing contact members forming a right angle}
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H01R12/725 5 {containing contact members presenting a contact carrying strip, e.g. edge-like strip}
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H01R12/727 5 {Coupling devices presenting arrays of contacts}
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H01R12/728 5 {Coupling devices without an insulating housing provided on the edge of the PCB}
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H01R12/73 4 connecting to other rigid printed circuits or like structures
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H01R12/732 5 {Printed circuits being in the same plane}
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H01R12/735 5 {Printed circuits including an angle between each other}
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H01R12/737 6 {Printed circuits being substantially perpendicular to each other (for printed connections H05K3/366)}
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H01R12/75 3 connecting to cables except for flat or ribbon cables
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H01R12/77 2 for flexible printed circuits, flat or ribbon cables or like structures
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H01R12/771 3 {Details}
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H01R12/772 4 {Strain relieving means}
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H01R12/774 4 {Retainers}
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H01R12/775 4 {Ground or shield arrangements}
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H01R12/777 3 {Coupling parts carrying pins, blades or analogous contacts (H01R12/78, H01R12/79 take precedence)}
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H01R12/778 3 {Coupling parts carrying sockets, clips or analogous counter-contacts (H01R12/78, H01R12/79 take precedence)}
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H01R12/78 3 connecting to other flexible printed circuits, flat or ribbon cables or like structures
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H01R12/79 3 connecting to rigid printed circuits or like structures
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H01R12/81 3 connecting to another cable except for flat or ribbon cable
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H01R12/82 2 connected with low or zero insertion force
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H01R12/83 3 connected with pivoting of printed circuits or like after insertion
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H01R12/85 3 contact pressure producing means, contacts activated after insertion of printed circuits or like structures
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H01R12/853 4 {Fluid activated}
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H01R12/856 4 {activated by shape memory material}
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H01R12/87 4 acting automatically by insertion of rigid printed or like structures
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H01R12/88 4 acting manually by rotating or pivoting connector housing parts
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H01R12/89 4 acting manually by moving connector housing parts linearly, e.g. slider
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H01R12/91 2 allowing relative movement between coupling parts, e.g. floating or self aligning (for coupling devices not specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures, H01R13/6315 takes precedence)
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H01R13/00 0 Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
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H01R13/005 1 {Electrical coupling combined with fluidic coupling}
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H01R13/02 1 Contact members
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H01R13/025 2 {formed by the conductors of a cable end}
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H01R13/03 2 characterised by the material, e.g. plating, or coating materials
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H01R13/035 3 {Plated dielectric material}
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H01R13/04 2 Pins or blades for co-operation with sockets
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H01R13/05 3 Resilient pins or blades (carrying separate resilient parts H01R13/15)
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H01R13/052 4 {co-operating with sockets having a circular transverse section}
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H01R13/055 4 {co-operating with sockets having a rectangular transverse section}
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H01R13/057 4 {co-operating with sockets having a square transverse section}
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H01R13/08 3 Resiliently-mounted rigid pins or blades
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H01R13/10 2 Sockets for co-operation with pins or blades
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H01R13/11 3 Resilient sockets (carrying separate resilient parts H01R13/15)
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H01R13/111 4 {co-operating with pins having a circular transverse section}
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H01R13/112 4 {forked sockets having two legs}
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H01R13/113 4 {co-operating with pins or blades having a rectangular transverse section}
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H01R13/114 4 {co-operating with pins or blades having a square transverse section}
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H01R13/115 4 U-shaped sockets having inwardly bent legs, e.g. spade type
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H01R13/14 3 Resiliently-mounted rigid sockets
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H01R13/15 2 Pins, blades or sockets having separate spring member for producing or increasing contact pressure
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H01R13/17 3 with spring member on the pin
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H01R13/18 3 with the spring member surrounding the socket
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H01R13/187 3 with spring member in the socket
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H01R13/193 2 Means for increasing contact pressure at the end of engagement of coupling part {, e.g. zero insertion force or no friction}
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H01R13/20 2 Pins, blades, or sockets shaped, or provided with separate member, to retain co-operating parts together
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H01R13/207 3 by screw-in connection
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H01R13/213 3 by bayonet connection
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H01R13/22 2 Contacts for co-operating by abutting
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H01R13/24 3 resilient; resiliently-mounted
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H01R13/2407 4 {characterized by the resilient means}
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H01R13/2414 5 {conductive elastomers}
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H01R13/2421 5 {using coil springs}
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H01R13/2428 5 {using meander springs}
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H01R13/2435 4 {with opposite contact points, e.g. C beam}
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H01R13/2442 4 {with a single cantilevered beam}
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H01R13/245 4 {by stamped-out resilient contact arm}
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H01R13/2457 4 {consisting of at least two resilient arms contacting the same counterpart}
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H01R13/2464 4 {characterized by the contact point}
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H01R13/2471 5 {pin shaped}
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H01R13/2478 5 {spherical}
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H01R13/2485 5 {for contacting a ball}
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H01R13/2492 5 {multiple contact points}
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H01R13/26 2 Pin or blade contacts for sliding co-operation on one side only {(for modular jack type connectors H01R24/62)}
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H01R13/28 2 Contacts for sliding cooperation with identically-shaped contact, e.g. for hermaphroditic coupling devices {(H01R24/84 takes precedence)}
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H01R13/33 2 Contact members made of resilient wire
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H01R13/35 2 for non-simultaneous co-operation with different types of contact member, e.g. socket co-operating with either round or flat pin
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H01R13/40 1 Securing contact members in or to a base or case; Insulating of contact members
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H01R13/405 2 Securing in non-demountable manner, e.g. moulding, riveting
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H01R13/41 3 by frictional grip in grommet, panel or base
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H01R13/415 3 by permanent deformation of contact member
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H01R13/42 2 Securing in a demountable manner
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H01R13/422 3 Securing in resilient one-piece base or case, {e.g. by friction}; One-piece base or case formed with resilient locking means
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H01R13/4223 4 {comprising integral flexible contact retaining fingers}
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H01R13/4226 5 {comprising two or more integral flexible retaining fingers acting on a single contact}
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H01R13/424 3 Securing in base or case composed of a plurality of insulating parts having at least one resilient insulating part
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H01R13/426 3 Securing by a separate resilient retaining piece supported by base or case, e.g. collar {or metal contact-retention clip}
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H01R13/428 3 by resilient locking means on the contact members; by locking means on resilient contact members
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H01R13/432 4 by stamped-out resilient tongue snapping behind shoulder in base or case
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H01R13/434 4 by separate resilient locking means on contact member, e.g. retainer collar or ring around contact member
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H01R13/436 3 Securing a plurality of contact members by one locking piece {or operation}
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H01R13/4361 4 {Insertion of locking piece perpendicular to direction of contact insertion}
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H01R13/4362 5 {comprising a temporary and a final locking position}
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H01R13/4364 4 {Insertion of locking piece from the front}
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H01R13/4365 5 {comprising a temporary and a final locking position}
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H01R13/4367 4 {Insertion of locking piece from the rear}
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H01R13/4368 5 {comprising a temporary and a final locking position}
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H01R13/44 1 Means for preventing access to live contacts {(making use of a switch actuated by engagement of counterpart H01R13/7036)}
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H01R13/443 2 Dummy plugs
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H01R13/447 2 Shutter or cover plate
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H01R13/453 3 Shutter or cover plate opened by engagement of counterpart
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H01R13/4532 4 {Rotating shutter}
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H01R13/4534 4 {Laterally sliding shutter}
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H01R13/4536 4 {Inwardly pivoting shutter}
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H01R13/4538 4 {Covers sliding or withdrawing in the direction of engagement}
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H01R13/46 1 Bases; Cases
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H01R13/465 2 {Identification means, e.g. labels, tags, markings (H01R9/2475, H01R9/2683 take precedence)}
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H01R13/50 2 formed as an integral body (H01R13/514 takes precedence)
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H01R13/501 3 {comprising an integral hinge or a frangible part}
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H01R13/502 2 composed of different pieces (H01R13/514 takes precedence)
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H01R13/5025 3 {one or more pieces being of resilient material}
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H01R13/504 3 different pieces being moulded, cemented, welded, e.g. ultrasonic, or swaged together
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H01R13/5045 4 {different pieces being assembled by press-fit}
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H01R13/506 3 assembled by snap action of the parts
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H01R13/508 3 assembled by {a separate} clip or spring
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H01R13/512 3 assembled by screw or screws
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H01R13/514 2 composed as a modular blocks or assembly, i.e. composed of co-operating parts provided with contact members or holding contact members between them
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H01R13/516 2 Means for holding or embracing insulating body, e.g. casing {, hoods}
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H01R13/518 3 for holding or embracing several coupling parts, e.g. frames
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H01R13/52 2 Dustproof, splashproof, drip-proof, waterproof, or flameproof cases
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H01R13/5202 3 {Sealing means between parts of housing or between housing part and a wall, e.g. sealing rings}
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H01R13/5205 3 {Sealing means between cable and housing, e.g. grommet (H01R13/5221 takes precedence)}
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H01R13/5208 4 {having at least two cable receiving openings}
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H01R13/521 3 {Sealing between contact members and housing, e.g. sealing insert}
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H01R13/5213 3 {Covers}
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H01R13/5216 3 {characterised by the sealing material, e.g. gels or resins}
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H01R13/5219 3 {Sealing means between coupling parts, e.g. interfacial seal}
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H01R13/5221 4 {having cable sealing means}
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H01R13/5224 3 {for medical use}
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H01R13/5227 3 {with evacuation of penetrating liquids}
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H01R13/523 3 for use under water
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H01R13/527 3 Flameproof cases (H01R13/70 takes precedence)
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H01R13/53 2 Bases or cases for heavy duty; Bases or cases {for high voltage} with means for preventing corona or arcing
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H01R13/533 2 Bases, cases made for use in extreme conditions, e.g. high temperature, radiation, vibration, corrosive environment, pressure (H01R13/52 takes precedence)
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H01R13/56 1 Means for preventing chafing or fracture of flexible leads at outlet from coupling part
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H01R13/562 2 {Bending-relieving}
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H01R13/565 2 {Torsion-relieving}
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H01R13/567 2 {Traverse cable outlet or wire connection}
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H01R13/58 1 Means for relieving strain on wire connection, e.g. cord grip {, for avoiding loosening of connections between wires and terminals within a coupling device terminating a cable (for flat or ribbon cables H01R12/771)}
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H01R13/5804 2 {comprising a separate cable clamping part (H01R13/5841 takes precedence)}
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H01R13/5808 3 {formed by a metallic element crimped around the cable (H01R4/185 takes precedence)}
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H01R13/5812 3 {the cable clamping being achieved by mounting the separate part on the housing of the coupling device}
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H01R13/5816 3 {for cables passing through an aperture in a housing wall, the separate part being captured between cable and contour of aperture}
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H01R13/582 2 {the cable being clamped between assembled parts of the housing}
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H01R13/5825 3 {the means comprising additional parts captured between housing parts and cable}
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H01R13/5829 3 {the clamping part being flexibly or hingedly connected to the housing}
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H01R13/5833 2 {the cable being forced in a tortuous or curved path, e.g. knots in cable (H01R13/582 takes precedence)}
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H01R13/5837 2 {specially adapted for accommodating various sized cables (H01R13/5825 takes precedence)}
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H01R13/5841 2 {allowing different orientations of the cable with respect to the coupling direction}
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H01R13/5845 2 {the strain relief being achieved by molding parts around cable and connections}
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H01R13/585 2 Grip increasing with strain force
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H01R13/59 2 Threaded ferrule or bolt operating in a direction parallel to the cable or wire
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H01R13/595 2 Bolts operating in a direction transverse to the cable or wire
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H01R13/60 1 Means for supporting coupling part when not engaged
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H01R13/62 1 Means for facilitating engagement or disengagement of coupling parts or for holding them in engagement
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H01R13/6205 2 {Two-part coupling devices held in engagement by a magnet}
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H01R13/621 2 Bolt, set screw or screw clamp
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H01R13/6215 3 {using one or more bolts}
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H01R13/622 2 Screw-ring or screw-casing (H01R13/623 takes precedence)
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H01R13/623 2 Casing or ring with helicoidal groove
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H01R13/625 2 Casing or ring with bayonet engagement
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H01R13/627 2 Snap or like fastening
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H01R13/6271 3 {Latching means integral with the housing (H01R13/6276, H01R13/6277, H01R13/6278 take precedence)}
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H01R13/6272 4 {comprising a single latching arm}
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H01R13/6273 4 {comprising two latching arms}
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H01R13/6275 3 {Latching arms not integral with the housing (H01R13/6276, H01R13/6277, H01R13/6278 take precedence)}
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H01R13/6276 3 {comprising one or more balls engaging in a hole or a groove}
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H01R13/6277 3 {comprising annular latching means, e.g. ring snapping in an annular groove}
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H01R13/6278 3 {comprising a pin snapping into a recess}
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H01R13/629 2 Additional means for facilitating engagement or disengagement of coupling parts, e.g. aligning or guiding means, levers, gas pressure {electrical locking indicators, manufacturing tolerances (separate tools or apparatus H01R43/26)}
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H01R13/62905 3 {comprising a camming member (H01R13/62933 and H01R13/641 take precedence)}
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H01R13/62911 4 {U-shaped sliding element}
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H01R13/62916 4 {Single camming plate}
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H01R13/62922 4 {Pair of camming plates}
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H01R13/62927 4 {Comprising supplementary or additional locking means}
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H01R13/62933 3 {Comprising exclusively pivoting lever}
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H01R13/62938 4 {Pivoting lever comprising own camming means}
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H01R13/62944 4 {Pivoting lever comprising gear teeth}
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H01R13/6295 4 {Pivoting lever comprising means indicating incorrect coupling of mating connectors}
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H01R13/62955 4 {Pivoting lever comprising supplementary/additional locking means}
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H01R13/62961 4 {Pivoting lever having extendable handle}
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H01R13/62966 4 {Comprising two pivoting levers}
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H01R13/62972 5 {Wherein the pivoting levers are two lever plates}
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H01R13/62977 3 {Pivoting levers actuating linearly camming means}
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H01R13/62983 3 {Linear camming means or pivoting lever for connectors for flexible or rigid printed circuit boards, flat or ribbon cables}
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H01R13/62988 4 {Lever acting directly on flexible or rigid printed circuit boards, flat or ribbon cables, e.g. recess provided to this purposeon the surface or edge of the flexible or rigid printed circuit boards, flat or ribbon cables}
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H01R13/62994 4 {Lever acting on a connector mounted onto the flexible or rigid printed circuit boards, flat or ribbon cables}
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H01R13/631 3 for engagement only
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H01R13/6315 4 {allowing relative movement between coupling parts, e.g. floating connection (for coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures, H01R12/91 takes precedence)}
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H01R13/633 3 for disengagement only {(in combination with safety switch H01R13/7132)}
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H01R13/6335 4 {comprising a handle}
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H01R13/635 4 by mechanical pressure, e.g. spring force
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H01R13/637 4 by fluid pressure, e.g. explosion
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H01R13/639 2 Additional means for holding or locking coupling parts together, after engagement, {e.g. separate keylock, retainer strap}
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H01R13/6392 3 {for extension cord}
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H01R13/6395 3 {for wall or panel outlets}
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H01R13/6397 3 {with means for preventing unauthorised use}
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H01R13/64 1 Means for preventing incorrect coupling
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H01R13/641 2 by indicating incorrect coupling; by indicating correct or full engagement
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H01R13/642 2 by position or shape of contact members
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H01R13/645 2 by exchangeable elements on case or base
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H01R13/6453 3 {comprising pin-shaped elements, capable of being orientated in different angular positions around their own longitudinal axes, e.g. pins with hexagonal base}
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H01R13/6456 3 {comprising keying elements at different positions along the periphery of the connector}
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H01R13/646 1 specially adapted for high-frequency, e.g. structures providing an impedance match or phase match (non-coaxed protective earth or shield arrangements H01R13/648; coaxed connectors specially adapted for high frequency H01R24/40)
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H01R13/6461 2 Means for preventing cross-talk
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H01R13/6463 3 using twisted pairs of wires
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H01R13/6464 3 by adding capacitive elements
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H01R13/6466 4 on substrates, e.g. printed circuit boards [PCB]
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H01R13/6467 3 by cross-over of signal conductors
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H01R13/6469 4 on substrates
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H01R13/6471 3 by special arrangement of ground and signal conductors, e.g. GSGS [Ground-Signal-Ground-Signal]
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H01R13/6473 2 Impedance matching
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H01R13/6474 3 by variation of conductive properties, e.g. by dimension variations
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H01R13/6476 4 by making an aperture, e.g. a hole
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H01R13/6477 3 by variation of dielectric properties
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H01R13/648 1 Protective earth or shield arrangements on coupling devices {, e.g. anti-static shielding} (coaxially arranged shields H01R24/38)
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H01R13/6485 2 {Electrostatic discharge protection (in general H05F1/00, for electric apparatus H05K9/0067)}
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H01R13/652 2 with earth pin, blade or socket
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H01R13/655 2 with earth brace
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H01R13/658 2 High frequency shielding arrangements, e.g. against EMI [Electro-Magnetic Interference] or EMP [Electro-Magnetic Pulse] {(coaxial coupling devices specially adapted for high frequency H01R24/40; for flat or ribbon cable connectors H01R12/774; for coaxial cable H01R9/05)}
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H01R13/6581 3 Shield structure
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H01R13/6582 4 with resilient means for engaging mating connector
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H01R13/6583 5 with separate conductive resilient members between mating shield members
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H01R13/6584 6 formed by conductive elastomeric members, e.g. flat gaskets or O-rings
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H01R13/6585 4 Shielding material individually surrounding or interposed between mutually spaced contacts
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H01R13/6586 5 for separating multiple connector modules
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H01R13/6587 6 for mounting on PCBs
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H01R13/6588 5 with through openings for individual contacts
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H01R13/6589 5 with wires separated by conductive housing parts
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H01R13/659 4 with plural ports for distinct connectors
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H01R13/6591 3 Specific features or arrangements of connection of shield to conductive members
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H01R13/65912 4 {for shielded multiconductor cable (coaxial cables with one conductor surrounded by shield H01R9/05; flat shielded cables H01R12/594)}
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H01R13/65914 5 {Connection of shield to additional grounding conductors}
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H01R13/65915 5 {Twisted pair of conductors surrounded by shield}
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H01R13/65917 5 {Connection to shield by means of resilient members}
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H01R13/65918 5 {wherein each conductor is individually surrounded by shield}
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H01R13/6592 4 the conductive member being a shielded cable
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H01R13/6593 5 the shield being composed of different pieces
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H01R13/6594 4 the shield being mounted on a PCB and connected to conductive members
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H01R13/6595 5 with separate members fixing the shield to the PCB
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H01R13/6596 4 the conductive member being a metal grounding panel
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H01R13/6597 4 the conductive member being a contact of the connector
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H01R13/6598 3 Shield material
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H01R13/6599 4 Dielectric material made conductive, e.g. plastic material coated with metal
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H01R13/66 1 Structural association with built-in electrical component (coupling devices having concentrically or coaxially-arranged contacts H01R24/38)
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H01R13/6608 2 {with built-in single component (H01R13/68, H01R13/70 take precedence)}
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H01R13/6616 3 {with resistor}
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H01R13/6625 3 {with capacitive component}
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H01R13/6633 3 {with inductive component, e.g. transformer}
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H01R13/6641 3 {with diode (with LED H01R13/7175)}
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H01R13/665 2 {with built-in electronic circuit (H01R13/70, H01R13/719 take precedence)}
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H01R13/6658 3 {on printed circuit board (H01R13/6666 - H01R13/6691 take precedence)}
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H01R13/6666 3 {with built-in overvoltage protection}
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H01R13/6675 3 {with built-in power supply}
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H01R13/6683 3 {with built-in sensor}
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H01R13/6691 3 {with built-in signalling means (H01R13/717 takes precedence)}
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H01R13/68 2 with built-in fuse
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H01R13/684 3 the fuse being removable
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H01R13/688 4 with housing part adapted for accessing the fuse
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H01R13/692 5 Turnable housing part
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H01R13/696 3 the fuse being integral with the terminal, e.g. pin or socket
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H01R13/70 2 with built-in switch
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H01R13/701 3 {the switch being actuated by an accessory, e.g. cover, locking member}
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H01R13/703 3 operated by engagement or disengagement of coupling parts, {e.g. dual-continuity coupling part}(H01R13/71 takes precedence)
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H01R13/7031 4 {Shorting, shunting or bussing of different terminals interrupted or effected on engagement of coupling part, e.g. for ESD protection, line continuity}
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H01R13/7032 5 {making use of a separate bridging element directly cooperating with the terminals}
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H01R13/7033 5 {making use of elastic extensions of the terminals}
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H01R13/7034 5 {the terminals being in direct electric contact separated by double sided connecting element (for printed circuit boards H01R12/7094)}
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H01R13/7035 4 {comprising a separated limit switch}
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H01R13/7036 4 {the switch being in series with coupling part, e.g. dead coupling, explosion proof coupling}
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H01R13/7037 5 {making use of a magnetically operated switch}
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H01R13/7038 5 {making use of a remote controlled switch, e.g. relais, solid state switch activated by the engagement of the coupling parts}
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H01R13/7039 4 {the coupling part with coding means activating the switch to establish different circuits}
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H01R13/707 3 interlocked with contact members or counterpart
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H01R13/71 3 Contact members of coupling parts operating as switch {, e.g. linear or rotational movement required after mechanical engagement of coupling part to establish electrical connection}
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H01R13/713 3 the switch being a safety switch
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H01R13/7132 4 {having ejecting mechanisms}
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H01R13/7135 4 {with ground fault protector (H01R13/7132 takes precedence)}
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H01R13/7137 4 {with thermal interrupter (H01R13/7132 takes precedence)}
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H01R13/717 2 with built-in light source
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H01R13/7172 3 {Conduits for light transmission}
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H01R13/7175 3 {Light emitting diodes (LEDs)}
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H01R13/7177 3 {filament or neon bulb}
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H01R13/719 2 specially adapted for high frequency, e.g. with filters
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H01R13/7193 3 with ferrite filters
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H01R13/7195 3 with planar filters with openings for contacts
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H01R13/7197 3 with filters integral with or fitted onto contacts, e.g. tubular filters
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H01R13/72 1 Means for accommodating flexible lead within the holder
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H01R13/73 1 Means for mounting coupling parts to apparatus or structures, e.g. to a wall
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H01R13/74 2 Means for mounting coupling parts in openings of a panel
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H01R13/741 3 {using snap fastening means}
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H01R13/743 4 {integral with the housing}
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H01R13/745 4 {separate from the housing}
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H01R13/746 3 {using a screw ring}
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H01R13/748 3 {using one or more screws (H01R13/746 takes precedence)}
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H01R24/00 0 Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure (contact members H01R13/02; securing contact members in or to a base or case or insulating of contact members H01R13/40; bases or cases H01R13/46; means for supporting coupling part when not engaged H01R13/60; means for facilitating engagement or disengagement of coupling parts or for holding them in engagement H01R13/62; means for preventing, inhibiting or avoiding incorrect coupling H01R13/64)
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H01R24/005 1 {requiring successive relative motions to complete the coupling, e.g. bayonet type}
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H01R24/20 1 Coupling parts carrying sockets, clips or analogous contacts and secured only to wire or cable
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H01R24/22 2 with additional earth or shield contacts
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H01R24/28 1 Coupling parts carrying pins, blades or analogous contacts and secured only to wire or cable
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H01R24/30 2 with additional earth or shield contacts
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H01R24/38 1 having concentrically or coaxially arranged contacts
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H01R24/40 2 specially adapted for high frequency
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H01R24/42 3 comprising impedance matching means or electrical components, e.g. filters or switches
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H01R24/44 4 comprising impedance matching means
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H01R24/46 4 comprising switches
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H01R24/48 4 comprising protection devices, e.g. overvoltage protection
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H01R24/50 3 mounted on a PCB [Printed Circuit Board]
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H01R24/52 3 mounted in or to a panel or structure
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H01R24/525 4 {Outlets}
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H01R24/54 3 Intermediate parts, e.g. adapters, splitters or elbows
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H01R24/542 4 {Adapters}
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H01R24/545 4 {Elbows}
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H01R24/547 4 {Splitters}
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H01R24/56 3 specially adapted to a specific shape of cables, e.g. corrugated cables, twisted pair cables, cables with two screens or hollow cables
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H01R24/562 4 {Cables with two screens}
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H01R24/564 4 {Corrugated cables}
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H01R24/566 4 {Hollow cables}
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H01R24/568 4 {Twisted pair cables}
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H01R24/58 1 Contacts spaced along longitudinal axis of engagement
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H01R24/60 1 Contacts spaced along planar side wall transverse to longitudinal axis of engagement
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H01R24/62 2 Sliding engagements with one side only, e.g. modular jack coupling devices
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H01R24/64 3 for high frequency, e.g. RJ 45
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H01R24/66 1 with pins, blades or analogous contacts and secured to apparatus or structure, e.g. to a wall
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H01R24/68 2 mounted on directly pluggable apparatus
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H01R24/70 2 with additional earth or shield contacts
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H01R24/76 1 with sockets, clips or analogous contacts and secured to apparatus or structure, e.g. to a wall
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H01R24/78 2 with additional earth or shield contacts
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H01R24/84 1 Hermaphroditic coupling devices
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H01R24/86 1 Parallel contacts arranged about a common axis
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H01R25/00 0 Coupling parts adapted for simultaneous co-operation with two or more identical counterparts, e.g. for distributing energy to two or more circuits (supported only by co-operation with a counterpart H01R31/00; with a holder adapted for supporting apparatus to which its counterpart is attached H01R33/88)
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H01R25/003 1 {the coupling part being secured only to wires or cables}
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H01R25/006 1 {the coupling part being secured to apparatus or structure, e.g. duplex wall receptacle}
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H01R25/14 1 Rails or bus-bars constructed so that the counterparts can be connected thereto at any point along their length (supporting elements for lighting devices, displaceable along guiding elements and making electrical contact with conductors running along the guiding elements F21V21/35)
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H01R25/142 2 {Their counterparts}
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H01R25/145 2 {Details, e.g. end pieces or joints (H01R25/147 takes precedence)}
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H01R25/147 2 {Low voltage devices, i.e. safe to touch live conductors}
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H01R25/16 1 Rails or bus-bars provided with a plurality of discrete connecting locations for counterparts
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H01R25/161 2 {Details}
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H01R25/162 3 {Electrical connections between or with rails or bus-bars (rails having primarily a non electrical function H01R4/64)}
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H01R25/164 2 {Connecting locations formed by flush mounted apparatus}
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H01R25/165 2 {Connecting locations formed by surface mounted apparatus}
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H01R25/167 2 {Connecting locations formed by staggering mounted apparatus}
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H01R25/168 2 {the connecting locations being situated away from the rail or bus-bar}
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H01R27/00 0 Coupling parts adapted for co-operation with two or more dissimilar counterparts ({for dissimilar contact members H01R13/35}; supported only by co-operation with a counterpart H01R31/00; with a holder adapted for supporting apparatus to which its counterpart is attached H01R33/90)
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H01R27/02 1 for simultaneous co-operation with two or more {dissimilar} counterparts
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H01R29/00 0 Coupling parts for selective co-operation with a counterpart in different ways to establish different circuits, e.g. for voltage selection, for series-parallel selection, {programmable connectors}
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H01R31/00 0 Coupling parts supported only by co-operation with counterpart
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H01R31/005 1 {Intermediate parts for distributing signals}
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H01R31/02 1 Intermediate parts for distributing energy to two or more circuits in parallel, e.g. splitter (with a holder adapted for supporting apparatus to which its counterpart is attached H01R33/92)
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H01R31/06 1 Intermediate parts for linking two coupling parts, e.g. adapter (with a holder adapted for supporting apparatus to which its counterpart is attached H01R33/94)
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H01R31/065 2 {with built-in electric apparatus}
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H01R31/08 1 Short-circuiting members for bridging contacts in a counterpart
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H01R31/085 2 {Short circuiting bus-strips}
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H01R33/00 0 Coupling devices specially adapted for supporting apparatus and having one part acting as a holder providing support and electrical connection via a counterpart which is structurally associated with the apparatus, e.g. lamp holders; Separate parts thereof
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H01R33/02 1 Single-pole devices, e.g. holder for supporting one end of a tubular incandescent or neon lamp
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H01R33/05 1 Two-pole devices
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H01R33/06 2 with two current-carrying pins, blades or analogous contacts, having their axes parallel to each other
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H01R33/065 3 {for supporting starter switches}
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H01R33/08 3 for supporting tubular fluorescent lamp
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H01R33/0809 4 {having contacts on one side only}
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H01R33/0818 4 {for a plurality of lamps}
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H01R33/0827 4 {characterised by the contacts}
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H01R33/0836 4 {characterised by the lamp holding means}
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H01R33/0845 5 {with axially resilient member}
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H01R33/0854 5 {with lamp rotating means}
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H01R33/0863 4 {characterised by the mounting means}
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H01R33/0872 5 {for mounting in an opening of a structure}
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H01R33/0881 4 {composed of different pieces}
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H01R33/089 4 {integral with starter holding structure (H01R33/065 for starters only)}
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H01R33/09 3 for baseless lamp bulb
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H01R33/18 2 having only abutting contacts
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H01R33/20 2 having concentrically or coaxially arranged contacts
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H01R33/205 3 {secured to structure or printed circuit board}
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H01R33/22 2 for screw type base, e.g. for lamp
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H01R33/225 3 {secured to structure or printed circuit board}
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H01R33/46 2 for bayonet type base
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H01R33/465 3 {secured to structure or printed circuit board}
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H01R33/72 1 Three-pole devices
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H01R33/74 1 Devices having four or more poles {, e.g. holders for compact fluorescent lamps}
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H01R33/76 2 Holders with sockets, clips, or analogous contacts adapted for axially-sliding engagement with parallely-arranged pins, blades, or analogous contacts on counterpart, e.g. electronic tube socket
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H01R33/7607 3 {the parallel terminal pins having a circular disposition}
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H01R33/7614 4 {the terminals being connected to individual wires}
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H01R33/7621 5 {the wires being connected using screw, clamp, wrap or spring connection}
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H01R33/7628 5 {the wires being connected using solder}
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H01R33/7635 4 {the terminals being collectively connected, e.g. to a PCB}
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H01R33/7642 5 {socket snap fastened in an opening of a PCB}
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H01R33/765 3 {the terminal pins having a non-circular disposition}
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H01R33/7657 3 {characterised by keying or marking means}
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H01R33/7664 3 {having additional guiding, adapting, shielding, anti-vibration or mounting means}
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H01R33/7671 3 {having multiple positions or sockets, e.g. stacked sockets while mounting}
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H01R33/7678 3 {having a separated part for spark preventing means}
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H01R33/7685 3 {having internal socket contact by abutting}
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H01R33/7692 3 {for supporting a tubular fluorescent lamp (for two-pole devices H01R33/06)}
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H01R33/88 1 adapted for simultaneous co-operation with two or more identical counterparts
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H01R33/90 1 adapted for co-operation with two or more dissimilar counterparts
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H01R33/92 1 Holders formed as intermediate parts for distributing energy in parallel through two or more counterparts at least one of which is attached to apparatus to be held
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H01R33/94 1 Holders formed as intermediate parts for linking a counter-part to a coupling part
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H01R33/942 2 {for tubular fluorescent lamps}
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H01R33/945 1 Holders with built-in electrical component
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H01R33/9453 2 {for screw type coupling devices}
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H01R33/9456 2 {for bayonet type coupling devices}
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H01R33/95 2 with fuse; with thermal switch
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H01R33/955 2 with switch operated manually and independent of engagement or disengagement of coupling
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H01R33/9555 3 {for screw type coupling devices}
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H01R33/96 2 with switch operated by engagement or disengagement of coupling
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H01R33/962 3 {for screw type coupling devices}
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H01R33/965 1 Dustproof, splashproof, drip-proof, waterproof, or flameproof holders
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H01R33/9651 2 {for screw type coupling devices}
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H01R33/9653 3 {neither pole becoming electrically connected until the coupling parts are substantially engaged}
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H01R33/9655 2 {for bayonet type coupling devices}
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H01R33/9656 3 {neither pole becoming electrically connected until the coupling parts are substantially engaged}
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H01R33/9658 2 {for tubular fluorescent lamps}
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H01R33/97 1 Holders with separate means to prevent loosening of the coupling or unauthorised removal of apparatus held
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H01R33/971 2 {for screw type coupling devices}
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H01R33/973 2 {for bayonet type coupling devices}
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H01R33/975 1 Holders with resilient means for protecting apparatus against vibrations or shocks
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H01R33/9753 2 {for screw type coupling devices}
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H01R33/9756 2 {for bayonet type coupling devices}
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H01R35/00 0 Flexible or turnable line connectors {, i.e. the rotation angle being limited} (rotary current collectors, distributors H01R39/00)
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H01R35/02 1 Flexible line connectors {without frictional contact members}
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H01R35/025 2 {having a flexible conductor wound around a rotation axis}
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H01R35/04 1 Turnable line connectors with limited rotation angle {with frictional contact members}
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H01R39/00 0 Rotary current collectors, distributors or interrupters
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H01R39/02 1 Details {for dynamo electric machines (for current collectors not particularly for dynamo electric machines H01R39/60, H01R39/64)}
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H01R39/022 2 {characterised by the materials used, e.g. ceramics}
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H01R39/025 3 {Conductive materials}
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H01R39/027 3 {Insulating materials}
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H01R39/04 2 Commutators (wherein the segments are formed by extensions of dynamo-electric machine winding H02K)
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H01R39/045 3 {the commutators being made of carbon}
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H01R39/06 3 other than with external cylindrical contact surface, e.g. flat commutators
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H01R39/08 2 Slip-rings
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H01R39/085 3 {the slip-rings being made of carbon}
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H01R39/10 3 other than with external cylindrical contact surface, e.g. flat slip-rings
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H01R39/12 3 using bearing or shaft surface as contact surface
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H01R39/14 2 Fastenings of commutators or slip-rings to shafts
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H01R39/16 3 by means of moulded or cast material applied during or after assembly
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H01R39/18 2 Contacts for co-operation with commutator or slip-ring, e.g. contact brush
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H01R39/20 3 characterised by the material thereof
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H01R39/22 4 incorporating lubricating or polishing ingredient
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H01R39/24 3 Laminated contacts; Wire contacts, e.g. metallic brush, carbon fibres
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H01R39/26 3 Solid sliding contacts, e.g. carbon brush
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H01R39/27 4 End caps on carbon brushes to transmit spring pressure
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H01R39/28 3 Roller contacts; Ball contacts
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H01R39/30 3 Liquid contacts
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H01R39/32 2 Connections of conductor to commutator segment
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H01R39/34 2 Connections of conductor to slip-ring
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H01R39/36 2 Connections of cable or wire to brush
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H01R39/38 2 Brush holders
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H01R39/381 3 {characterised by the application of pressure to brush}
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H01R39/383 3 {characterised by the electrical connection to the brush holder}
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H01R39/385 3 {Means for mechanical fixation of the brush holder}
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H01R39/386 4 {Electrically insulated bolts}
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H01R39/388 3 {characterised by the material of the brush holder}
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H01R39/39 3 wherein the brush is fixedly mounted in the holder
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H01R39/40 3 enabling brush movement within holder during current collection
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H01R39/41 3 cartridge type
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H01R39/415 4 with self-recoiling spring
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H01R39/42 2 Devices for lifting brushes
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H01R39/44 2 Devices for shifting brushes
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H01R39/46 2 Auxiliary means for improving current transfer, or for reducing or preventing sparking or arcing
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H01R39/48 3 by air blast; by surrounding collector with non-conducting liquid or gas
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H01R39/50 3 Barriers placed between brushes
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H01R39/52 3 by use of magnets
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H01R39/54 3 by use of impedance between brushes or segments
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H01R39/56 2 Devices for lubricating or polishing slip-rings or commutators during operation of the collector
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H01R39/58 2 Means structurally associated with the current collector for indicating condition thereof, e.g. for indicating brush wear
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H01R39/59 2 Means structurally associated with the brushes for interrupting current (H01R39/58 takes precedence)
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H01R39/60 1 Devices for interrupted current collection, e.g. commutating device, distributor, interrupter (self-interrupters H01H, e.g. H01H51/34)
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H01R39/62 2 with more than one brush co-operating with the same set of segments
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H01R39/64 1 Devices for uninterrupted current collection
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H01R39/643 2 {through ball or roller bearing}
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H01R39/646 2 {through an electrical conductive fluid}
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H01R41/00 0 Non-rotary current collectors for maintaining contact between moving and stationary parts of an electric circuit (end pieces terminating in a hook or the like H01R11/12; current collectors for power supply lines of electrically-propelled vehicles B60L5/00)
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H01R41/02 1 Devices for interrupted current collection, e.g. distributor (electrically-operated selector switches H01H67/00)
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H01R43/00 0 Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors (of trolley lines B60M1/28)
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H01R43/002 1 {Maintenance of line connectors, e.g. cleaning}
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H01R43/005 1 {for making dustproof, splashproof, drip-proof, waterproof, or flameproof connection, coupling, or casing}
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H01R43/007 1 {for elastomeric connecting elements}
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H01R43/01 1 for connecting unstripped conductors to contact members having insulation cutting edges
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H01R43/015 2 {Handtools}
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H01R43/02 1 for soldered or welded connections
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H01R43/0207 2 {Ultrasonic-, H.F.-, cold- or impact welding}
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H01R43/0214 2 {Resistance welding (H01R43/0228 takes precedence)}
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H01R43/0221 2 {Laser welding (H01R43/0228 takes precedence)}
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H01R43/0228 2 {without preliminary removing of insulation before soldering or welding}
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H01R43/0235 2 {for applying solder (H01R43/0228 takes precedence)}
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H01R43/0242 2 {comprising means for controlling the temperature, e.g. making use of the curie point}
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H01R43/0249 2 {for simultaneous welding or soldering of a plurality of wires to contact elements}
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H01R43/0256 2 {for soldering or welding connectors to a printed circuit board}
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H01R43/0263 2 {for positioning or holding parts during soldering or welding process}
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H01R43/027 1 for connecting conductors by clips
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H01R43/0275 2 {by using explosive force}
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H01R43/033 1 for wrapping or unwrapping wire connections
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H01R43/0335 2 {for unwraping}
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H01R43/04 1 for forming connections by deformation, e.g. crimping tool
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H01R43/042 2 Hand tools for crimping
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H01R43/0421 3 {combined with other functions, e.g. cutting}
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H01R43/0422 3 {operated by an explosive force}
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H01R43/0424 3 {with more than two radially actuated mandrels}
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H01R43/0425 3 {with mandrels actuated in axial direction to the wire}
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H01R43/0427 3 {fluid actuated hand crimping tools}
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H01R43/0428 3 {Power-driven hand crimping tools}
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H01R43/045 3 with contact member feeding mechanism
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H01R43/048 2 Crimping apparatus or processes (H01R43/042 takes precedence)
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H01R43/0482 3 {combined with contact member manufacturing mechanism}
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H01R43/0484 3 {for eyelet contact members}
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H01R43/0486 3 {with force measuring means}
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H01R43/0488 3 {with crimp height adjusting means}
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H01R43/05 3 with wire-insulation stripping
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H01R43/052 3 with wire-feeding mechanism
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H01R43/055 3 with contact member feeding mechanism
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H01R43/058 2 Crimping mandrels
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H01R43/0585 3 {for crimping apparatus with more than two radially actuated mandrels}
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H01R43/06 1 Manufacture of commutators
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H01R43/08 2 in which segments are not separated until after assembly
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H01R43/10 1 Manufacture of slip-rings
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H01R43/12 1 Manufacture of brushes
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H01R43/14 1 Maintenance of current collectors, e.g. reshaping of brushes, cleaning of commutators
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H01R43/16 1 for manufacturing contact members, e.g. by punching and by bending
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H01R43/18 1 for manufacturing bases or cases for contact members
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H01R43/20 1 for assembling or disassembling contact members with insulating base, case or sleeve
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H01R43/205 2 {with a panel or printed circuit board}
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H01R43/22 2 Hand tools
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H01R43/24 2 Assembling by moulding on contact members
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H01R43/26 1 for engaging or disengaging the two parts of a coupling device (structural association with two-part coupling device H01R13/629)
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H01R43/28 1 for wire processing before connecting to contact members, not provided for in groups H01R43/02 - H01R43/26
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H01R2101/00 0 One pole
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H01R2103/00 0 Two poles
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H01R2105/00 0 Three poles
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H01R2107/00 0 Four or more poles
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H01R2201/00 0 Connectors or connections adapted for particular applications
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H01R2201/02 1 for antennas
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H01R2201/04 1 for network, e.g. LAN connectors
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H01R2201/06 1 for computer periphery
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H01R2201/08 1 for halogen lamps
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H01R2201/10 1 for dynamoelectric machines
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H01R2201/12 1 for medicine and surgery
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H01R2201/14 1 seismic connectors
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H01R2201/16 1 for telephony
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H01R2201/18 1 for television
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H01R2201/20 1 for testing or measuring purposes
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H01R2201/22 1 for transformers or coils
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H01R2201/24 1 for radio transmission
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H01R2201/26 1 for vehicles
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H01S DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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H01S1/00 0 Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
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H01S1/005 1 {using a relativistic beam of charged particles, e.g. electron cyclotron maser, gyrotron}
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H01S1/02 1 solid
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H01S1/04 1 liquid
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H01S1/06 1 Gaseous {, i.e. beam masers}
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H01S3/00 0 Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range (semiconductors lasers H01S5/00)
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H01S3/0007 1 {Applications not otherwise provided for (working metals or other materials by laser beam B23K26/00; using photons to produce a reactive propulsive thrust F03H3/00; optical recording of measured values in general G01D15/14; optics in general G02B; holographic processes or apparatus G03H; optical marking or sensing of data record carriers G06K7/10 - G06K7/14, G06K15/12; injection heating of plasma by laser H05H1/22; acceleration of neutral particles by electromagnetic wave pressure H05H3/04)}
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H01S3/0014 1 {Monitoring arrangements not otherwise provided for (photometry G01J1/00, e.g. G01J1/4257; radiation pyrometry G01J5/00; measuring coherence of light G01J9/00; measuring wavelength of light G01J9/00, e.g. G01J9/0246; measuring optical pulses G01J11/00; calorimetrically measuring power of laser beams G01K17/003)}
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H01S3/005 1 {Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping (shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B)}
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H01S3/0057 2 {Temporal shaping, e.g. pulse compression, frequency chirping (soliton generation and propagation G02F1/3513, H01S3/063 and H01S3/108)}
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H01S3/0064 2 {Anti-reflection devices, e.g. optical isolaters (absorbing layers for marking or protecting purposes in laser working B23K26/50; magneto-optical non-reciprocal devices G02F1/093, G02F1/0955)}
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H01S3/0071 2 {Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction}
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H01S3/0078 2 {Frequency filtering}
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H01S3/0085 2 {Modulating the output, i.e. the laser beam is modulated outside the laser cavity}
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H01S3/0092 2 {Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity (nonlinear frequency conversion per se G02F1/35)}
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H01S3/02 1 Constructional details {(housings or packages of fibre lasers H01S3/06704)}
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H01S3/022 2 {of liquid lasers}
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H01S3/025 2 {of solid state lasers, e.g. housings or mountings}
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H01S3/027 3 {comprising a special atmosphere inside the housing}
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H01S3/03 2 of gas laser discharge tubes
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H01S3/0305 3 {Selection of materials for the tube or the coatings thereon}
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H01S3/031 3 {Metal vapour lasers, e.g. metal vapour generation}
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H01S3/0315 3 {Waveguide lasers}
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H01S3/032 3 for confinement of the discharge, e.g. by special features of the discharge constricting tube
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H01S3/0323 4 {by special features of the discharge constricting tube, e.g. capillary}
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H01S3/0326 4 {by an electromagnetic field}
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H01S3/034 3 Optical devices within, or forming part of, the tube, e.g. windows, mirrors (reflectors having variable properties or positions for initial adjustment of the resonator H01S3/086)
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H01S3/0343 4 {Aerodynamic windows}
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H01S3/0346 4 {Protection of windows or mirrors against deleterious effects (cooling arrangements H01S3/0401)}
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H01S3/036 3 Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube {(H01S3/031 takes precedence)}
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H01S3/038 3 Electrodes, e.g. special shape, configuration or composition
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H01S3/0381 4 {Anodes or particular adaptations thereof}
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H01S3/0382 4 {Cathodes or particular adaptations thereof}
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H01S3/0384 4 {Auxiliary electrodes, e.g. for pre-ionisation or triggering, or particular adaptations therefor}
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H01S3/0385 4 {Shape}
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H01S3/0387 5 {Helical shape}
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H01S3/0388 4 {Compositions, materials or coatings}
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H01S3/04 2 Arrangements for thermal management
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H01S3/0401 3 {of optical elements being part of laser resonator, e.g. windows, mirrors, lenses}
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H01S3/0402 3 {for liquid lasers}
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H01S3/0404 3 {Air- or gas cooling, e.g. by dry nitrogen}
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H01S3/0405 3 {Conductive cooling, e.g. by heat sinks or thermo-electric elements}
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H01S3/0407 3 {Liquid cooling, e.g. by water}
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H01S3/0408 3 {Radiative cooling, e.g. by anti-Stokes scattering in the active medium}
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H01S3/041 3 for gas lasers {(H01S3/0401 takes precedence)}
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H01S3/042 3 for solid state lasers {(H01S3/0401 takes precedence)}
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H01S3/05 1 Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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H01S3/06 2 Construction or shape of active medium
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H01S3/0602 3 {Crystal lasers or glass lasers (H01S3/063 takes precedence)}
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H01S3/0604 4 {in the form of a plate or disc}
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H01S3/0606 4 {with polygonal cross-section, e.g. slab, prism (H01S3/0604 takes precedence)}
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H01S3/0608 4 {Laser crystal with a hole, e.g. a hole or bore for housing a flashlamp or a mirror}
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H01S3/061 4 {with elliptical or circular cross-section and elongated shape, e.g. rod}
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H01S3/0612 4 {Non-homogeneous structure (H01S3/07 takes precedence)}
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H01S3/0615 4 {Shape of end-face}
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H01S3/0617 4 {having a varying composition or cross-section in a specific direction}
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H01S3/0619 3 {Coatings, e.g. AR, HR, passivation layer}
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H01S3/0621 4 {Coatings on the end-faces, e.g. input/output surfaces of the laser light}
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H01S3/0623 5 {Antireflective [AR]}
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H01S3/0625 4 {Coatings on surfaces other than the end-faces}
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H01S3/0627 3 {the resonator being monolithic, e.g. microlaser}
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H01S3/063 3 Waveguide lasers, {i.e. whereby the dimensions of the waveguide are of the order of the light wavelength (waveguide gas lasers H01S3/0315)}
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H01S3/0632 4 {Thin film lasers in which light propagates in the plane of the thin film}
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H01S3/0635 5 {provided with a periodic structure, e.g. using distributed feed-back, grating couplers (controlling, e.g. modulating distributed feed-back lasers H01S3/102)}
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H01S3/0637 5 {Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)}
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H01S3/067 4 Fibre lasers
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H01S3/06704 5 {Housings; Packages}
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H01S3/06708 5 {Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering (optical fibres as passive waveguides G02B6/02)}
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H01S3/06712 6 {Polarising fibre; Polariser}
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H01S3/06716 6 {Fibre compositions (per se C03C13/04)or doping with active elements (lasing materials in general H01S3/14)}
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H01S3/0672 6 {Non-uniform radial doping}
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H01S3/06725 6 {Fibre characterized by a specific dispersion, e.g. for pulse shaping in soliton lasers or for dispersion compensating [DCF]}
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H01S3/06729 6 {Peculiar transverse fibre profile}
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H01S3/06733 7 {Fibre having more than one cladding}
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H01S3/06737 7 {Fibre having multiple non-coaxial cores, e.g. multiple active cores or separate cores for pump and gain}
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H01S3/06741 7 {Photonic crystal fibre, i.e. the fibre having a photonic bandgap}
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H01S3/06745 6 {Tapering of the fibre, core or active region}
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H01S3/0675 5 {Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers}
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H01S3/06754 5 {Fibre amplifiers (H01S3/06708 takes precedence)}
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H01S3/06758 6 {Tandem amplifiers}
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H01S3/06762 6 {having a specific amplification band}
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H01S3/06766 7 {C-band amplifiers, i.e. amplification in the range of about 1530 nm to 1560 nm}
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H01S3/0677 7 {L-band amplifiers, i.e. amplification in the range of about 1560 nm to 1610 nm}
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H01S3/06775 7 {S-band amplifiers, i.e. amplification in the range of about 1450 nm to 1530 nm}
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H01S3/06779 6 {with optical power limiting}
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H01S3/06783 6 {Amplifying coupler}
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H01S3/06787 6 {Bidirectional amplifier}
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H01S3/06791 5 {Fibre ring lasers (fibre laser gyrometers G01C19/72)}
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H01S3/06795 5 {with superfluorescent emission, e.g. amplified spontaneous emission sources for fibre laser gyrometers (fibre laser gyrometers per se G01C19/72)}
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H01S3/07 3 consisting of a plurality of parts, e.g. segments (H01S3/067 takes precedence)
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H01S3/073 4 {Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers (tandem arrangements of separate gas lasers H01S3/2366)}
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H01S3/076 5 {Folded-path lasers}
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H01S3/08 2 Construction or shape of optical resonators or components thereof
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H01S3/08004 3 {incorporating a dispersive element, e.g. a prism for wavelength selection (H01S3/0811, H01S3/08022 take precedence)}
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H01S3/08009 4 {using a diffraction grating}
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H01S3/08013 3 {Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate (the active medium being a fibre H01S3/067)}
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H01S3/08018 3 Mode suppression
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H01S3/08022 4 Longitudinal modes (mode suppression using a plurality of resonators H01S3/082)
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H01S3/08027 5 {by a filter, e.g. a Fabry-Perot filter is used for wavelength setting}
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H01S3/08031 5 Single-mode emission
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H01S3/08036 6 using intracavity dispersive, polarising or birefringent elements
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H01S3/0804 4 Transverse or lateral modes
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H01S3/08045 5 Single-mode emission
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H01S3/0805 5 by apertures, e.g. pin-holes or knife-edges
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H01S3/08054 3 {Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation (quarter-wave plates in a Q-switch laser H01S3/1124, H01S3/115)}
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H01S3/08059 3 {Constructional details of the reflector, e.g. shape (mirrors in general G02B5/08; mountings for mirrors G02B7/18)}
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H01S3/08063 4 {Graded reflectivity, e.g. variable reflectivity mirror}
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H01S3/08068 4 {Holes; Stepped surface; Special cross-section}
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H01S3/08072 3 {Thermal lensing or thermally induced birefringence; Compensation thereof}
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H01S3/08077 4 {Pump induced waveguiding, i.e. the pump induces refractive index change in the laser medium to guide the amplified light, e.g. gain- or loss- guiding or thermally induced refractive index change}
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H01S3/08081 3 {Unstable resonators}
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H01S3/08086 3 {Multiple-wavelength emission}
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H01S3/0809 4 {Two-wavelenghth emission}
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H01S3/08095 3 {Zig-zag travelling beam through the active medium}
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H01S3/081 3 comprising three or more reflectors
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H01S3/0811 4 {incorporating a dispersive element, e.g. a prism for wavelength selection}
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H01S3/0812 5 {using a diffraction grating}
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H01S3/0813 4 {Configuration of resonator}
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H01S3/0815 5 {having 3 reflectors, e.g. V-shaped resonators}
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H01S3/0816 5 {having 4 reflectors, e.g. Z-shaped resonators}
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H01S3/0817 5 {having 5 reflectors, e.g. W-shaped resonators}
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H01S3/0818 4 {Unstable resonators}
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H01S3/082 4 defining a plurality of resonators, e.g. for mode selection or suppression
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H01S3/0823 5 {incorporating a dispersive element, e.g. a prism for wavelength selection}
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H01S3/0826 6 {using a diffraction grating}
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H01S3/083 4 Ring lasers {(fibre ring lasers H01S3/06791)}
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H01S3/0835 5 {Gas ring lasers}
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H01S3/086 3 One or more reflectors having variable properties or positions for initial adjustment of the resonator (varying a parameter of the laser output during operation H01S3/10; stabilisation of the laser output H01S3/13)
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H01S3/09 1 Processes or apparatus for excitation, e.g. pumping
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H01S3/0903 2 {Free-electron laser}
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H01S3/0906 2 {Electrical, electrochemical, or electron-beam pumping of a dye laser}
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H01S3/091 2 using optical pumping
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H01S3/0912 3 {Electronics or drivers for the pump source, i.e. details of drivers or circuitry specific for laser pumping (laser diode drivers H01S5/042)}
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H01S3/0915 3 by incoherent light
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H01S3/09155 4 {by cathodo-luminescence}
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H01S3/092 4 of flash lamp (H01S3/0937 takes precedence {; flash lamps per se H01J61/80; circuit arrangements for operating flash lamps in general H05B41/30})
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H01S3/093 5 focusing or directing the excitation energy into the active medium
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H01S3/0931 6 {Imaging pump cavity, e.g. elliptical}
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H01S3/0933 4 of a semiconductor, e.g. light emitting diode
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H01S3/0937 4 produced by exploding or combustible material
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H01S3/094 3 by coherent light
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H01S3/094003 4 {the pumped medium being a fibre}
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H01S3/094007 5 {Cladding pumping, i.e. pump light propagating in a clad surrounding the active core}
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H01S3/094011 5 {with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre}
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H01S3/094015 5 {with pump light recycling, i.e. with reinjection of the unused pump light back into the fiber, e.g. by reflectors or circulators}
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H01S3/094019 5 {Side pumped fibre, whereby pump light is coupled laterally into the fibre via an optical component like a prism, or a grating, or via V-groove coupling}
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H01S3/094023 5 {with ASE light recycling, with reinjection of the ASE light back into the fiber, e.g. by reflectors or circulators}
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H01S3/094026 4 {for synchronously pumping, e.g. for mode locking}
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H01S3/09403 4 {Cross-pumping, e.g. Förster process involving intermediate medium for excitation transfer}
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H01S3/094034 4 {the pumped medium being a dye}
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H01S3/094038 4 {End pumping}
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H01S3/094042 4 {of a fibre laser}
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H01S3/094046 5 {of a Raman fibre laser}
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H01S3/094049 4 {Guiding of the pump light}
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H01S3/094053 5 {Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle}
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H01S3/094057 5 {by tapered duct or homogenized light pipe, e.g. for concentrating pump light}
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H01S3/094061 4 {Shared pump, i.e. pump light of a single pump source is used to pump plural gain media in parallel}
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H01S3/094065 4 {Single-mode pumping}
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H01S3/094069 4 {Multi-mode pumping}
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H01S3/094073 4 {Non-polarized pump, e.g. depolarizing the pump light for Raman lasers}
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H01S3/094076 4 {Pulsed or modulated pumping (H01S3/1024 takes precedence)}
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H01S3/09408 4 {Pump redundancy}
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H01S3/094084 4 {with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators}
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H01S3/094088 4 {with ASE light recycling, i.e. with reinjection of the ASE light, e.g. by reflectors or circulators}
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H01S3/094092 4 {Upconversion pumping}
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H01S3/094096 4 {Multi-wavelength pumping}
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H01S3/0941 4 of a laser diode
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H01S3/09415 5 {the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping}
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H01S3/0943 4 of a gas laser
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H01S3/0947 4 of an organic dye laser
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H01S3/095 2 using chemical or thermal pumping
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H01S3/09505 3 {involving photochemical reactions, e.g. photodissociation (iodine lasers H01S3/2215)}
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H01S3/0951 3 by increasing the pressure in the laser gas medium
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H01S3/0953 4 Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds
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H01S3/0955 2 using pumping by high energy particles {(H01S3/0903, H01S3/0906, H01S3/09707 take precedence)}
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H01S3/0957 3 by high energy nuclear particles
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H01S3/0959 3 by an electron beam
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H01S3/097 2 by gas discharge of a gas laser
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H01S3/09702 3 {Details of the driver electronics and electric discharge circuits}
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H01S3/09705 3 {with particular means for stabilising the discharge}
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H01S3/09707 3 {using an electron or ion beam (free-electron laser H01S3/0903)}
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H01S3/0971 3 transversely excited (H01S3/0975 takes precedence)
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H01S3/09713 4 {with auxiliary ionisation, e.g. double discharge excitation}
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H01S3/09716 5 {by ionising radiation}
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H01S3/0973 4 having a travelling wave passing through the active medium
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H01S3/0975 3 using inductive or capacitive excitation
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H01S3/0977 3 having auxiliary ionisation means {(H01S3/09713 takes precedence)}
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H01S3/09775 4 {by ionising radiation}
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H01S3/0979 3 Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds
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H01S3/10 1 Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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H01S3/10007 2 {in optical amplifiers}
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H01S3/1001 3 {by controlling the optical pumping}
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H01S3/10013 3 {by controlling the temperature of the active medium}
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H01S3/10015 3 {by monitoring or controlling, e.g. attenuating, the input signal}
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H01S3/10023 3 {by functional association of additional optical elements, e.g. filters, gratings, reflectors}
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H01S3/1003 4 {tunable optical elements, e.g. acousto-optic filters, tunable gratings}
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H01S3/10038 2 {Amplitude control}
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H01S3/10046 3 {Pulse repetition rate control (H01S3/11 takes precedence)}
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H01S3/10053 2 {Phase control}
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H01S3/10061 2 {Polarization control}
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H01S3/10069 2 {Memorized or pre-programmed characteristics, e.g. look-up table [LUT]}
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H01S3/10076 2 {using optical phase conjugation, e.g. phase conjugate reflection}
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H01S3/10084 2 {Frequency control by seeding}
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H01S3/10092 3 {Coherent seed, e.g. injection locking}
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H01S3/101 2 Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted
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H01S3/102 2 by controlling the active medium, e.g. by controlling the processes or apparatus for excitation (H01S3/13 takes precedence)
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H01S3/1022 3 {by controlling the optical pumping}
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H01S3/1024 4 {for pulse generation}
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H01S3/1026 3 {Controlling the active medium by translation or rotation, e.g. to remove heat from that part of the active medium that is situated on the resonator axis}
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H01S3/1028 3 {by controlling the temperature}
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H01S3/104 3 in gas lasers
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H01S3/105 2 by controlling the mutual position or the reflecting properties of the reflectors of the cavity {, e.g. by controlling the cavity length}({H01S3/10076}, H01S3/13 take precedence)
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H01S3/1051 3 {one of the reflectors being of the type using frustrated reflection}
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H01S3/1053 3 {Control by pressure or deformation}
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H01S3/1055 3 one of the reflectors being constituted by a diffraction grating
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H01S3/106 2 by controlling devices placed within the cavity ({H01S3/10076,} H01S3/13 take precedence)
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H01S3/1061 3 {using a variable absorption device}
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H01S3/1062 3 {using a controlled passive interferometer, e.g. a Fabry-Perot etalon}
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H01S3/1063 3 {using a solid state device provided with at least one potential jump barrier}
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H01S3/1065 3 {using liquid crystals}
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H01S3/1066 3 {using a magneto-optical device}
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H01S3/1067 3 {using pressure or deformation}
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H01S3/1068 3 {using an acousto-optical device}
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H01S3/107 3 using electro-optic devices, e.g. exhibiting Pockels or Kerr effect {(H01S3/1061, H01S3/1063, H01S3/1065 take precedence)}
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H01S3/1075 4 {for optical deflection}
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H01S3/108 3 using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering {(mode locking using a non-linear element H01S3/1112)}
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H01S3/1083 4 {using parametric generation}
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H01S3/1086 4 {using scattering effects, e.g. Raman or Brillouin effect}
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H01S3/109 4 Frequency multiplication, e.g. harmonic generation
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H01S3/1095 5 {self doubling, e.g. lasing and frequency doubling by the same active medium}
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H01S3/11 2 Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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H01S3/1103 3 {Cavity dumping}
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H01S3/1106 3 Mode locking
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H01S3/1109 4 Active mode locking
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H01S3/1112 4 Passive mode locking
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H01S3/1115 5 using intracavity saturable absorbers
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H01S3/1118 6 Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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H01S3/1121 4 {Harmonically mode locking lasers, e.g. modulation frequency equals multiple integers or a fraction of the resonator roundtrip time}
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H01S3/1123 3 Q-switching
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H01S3/1124 4 {using magneto-optical devices}
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H01S3/1127 4 {using pulse transmission mode [PTM]}
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H01S3/113 4 using intracavity saturable absorbers
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H01S3/115 4 using intracavity electro-optic devices
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H01S3/117 4 using intracavity acousto-optic devices
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H01S3/121 4 using intracavity mechanical devices
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H01S3/123 5 using rotating mirrors
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H01S3/125 5 using rotating prisms
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H01S3/127 4 Plural Q-switches
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H01S3/13 2 Stabilisation of laser output parameters, e.g. frequency or amplitude
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H01S3/1301 3 {in optical amplifiers}
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H01S3/13013 4 {by controlling the optical pumping}
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H01S3/13017 4 {by controlling the temperature of the active medium}
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H01S3/1302 4 {by all-optical means, e.g. gain-clamping}
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H01S3/1303 3 {by using a passive reference, e.g. absorption cell (H01S3/139 takes precedence)}
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H01S3/1304 3 {by using an active reference, e.g. second laser, klystron or other standard frequency source (H01S3/139 takes precedence; automatic control of electronic generators H03L7/00)}
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H01S3/1305 3 {Feedback control systems}
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H01S3/1306 3 {Stabilisation of the amplitude}
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H01S3/1307 3 {Stabilisation of the phase}
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H01S3/1308 3 {Stabilisation of the polarisation}
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H01S3/131 3 by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
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H01S3/1312 4 {by controlling the optical pumping}
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H01S3/1315 4 {by gain saturation}
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H01S3/1317 4 {by controlling the temperature}
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H01S3/134 4 in gas lasers
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H01S3/136 3 by controlling devices placed within the cavity
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H01S3/137 4 for stabilising of frequency
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H01S3/139 3 by controlling the mutual position or the reflecting properties of the reflectors of the cavity {, e.g. by controlling the cavity length}
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H01S3/1392 4 {by using a passive reference, e.g. absorption cell (H01S3/1396, H01S3/1398 take precedence)}
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H01S3/1394 4 {by using an active reference, e.g. second laser, klystron or other standard frequency source}
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H01S3/1396 4 {by using two modes present, e.g. Zeeman splitting (H01S3/1398 takes precedence)}
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H01S3/1398 4 {by using a supplementary modulation of the output}
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H01S3/14 1 characterised by the material used as the active medium
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H01S3/16 2 Solid materials
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H01S3/1601 3 {characterised by an active (lasing) ion}
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H01S3/1603 4 {rare earth}
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H01S3/1605 5 {terbium}
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H01S3/1606 5 {dysprosium}
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H01S3/1608 5 {erbium}
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H01S3/161 5 {holmium}
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H01S3/1611 5 {neodymium}
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H01S3/1613 5 {praseodymium}
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H01S3/1615 5 {samarium}
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H01S3/1616 5 {thulium}
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H01S3/1618 5 {ytterbium}
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H01S3/162 4 {transition metal}
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H01S3/1621 5 {cobalt}
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H01S3/1623 5 {chromium, e.g. Alexandrite}
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H01S3/1625 5 {titanium}
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H01S3/1626 4 {uranium}
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H01S3/1628 3 {characterised by a semiconducting matrix}
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H01S3/163 3 {characterised by a crystal matrix}
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H01S3/1631 4 {aluminate}
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H01S3/1633 5 {BeAl2O4, i.e. Chrysoberyl}
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H01S3/1635 5 {LaMgAl11O19 (LNA, Lanthanum Magnesium Hexaluminate)}
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H01S3/1636 5 {Al2O3 (Sapphire)}
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H01S3/1638 5 {YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)}
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H01S3/164 4 {garnet}
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H01S3/1641 5 {GGG}
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H01S3/1643 5 {YAG}
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H01S3/1645 4 {halide}
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H01S3/1646 5 {BaY2F8}
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H01S3/1648 5 {with the formula XYZF6 (Colquiriite structure), wherein X is Li, Na, K or Rb, Y is Mg, Ca, Sr, Cd or Ba and Z is Al, Sc or Ga}
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H01S3/165 5 {with the formula MF2, wherein M is Ca, Sr or Ba}
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H01S3/1651 5 {SrAlF5}
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H01S3/1653 5 {YLiF4(YLF, LYF)}
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H01S3/1655 4 {silicate}
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H01S3/1656 5 {BeAl2(SiO3)6}
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H01S3/1658 5 {Mg2SiO4 (Forsterite)}
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H01S3/166 5 {La3Ga5SiO14 [LGS]}
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H01S3/1661 5 {Y2SiO5 [YSO]}
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H01S3/1663 4 {beryllate}
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H01S3/1665 5 {La2Be2O5 [BEL]}
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H01S3/1666 4 {borate, carbonate, arsenide}
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H01S3/1668 4 {scandate}
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H01S3/167 5 {Sc2O3}
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H01S3/1671 4 {vanadate, niobate, tantalate}
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H01S3/1673 5 {YVO4 [YVO]}
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H01S3/1675 4 {titanate, germanate, molybdate, tungstate}
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H01S3/1676 5 {Li4Ge5O12}
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H01S3/1678 5 {LaBGeO5}
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H01S3/168 3 {using an organic dye dispersed in a solid matrix}
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H01S3/1681 3 {using colour centres}
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H01S3/1683 3 {using superconductivity, e.g. provided with Josephson junctions}
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H01S3/1685 3 {Ceramics}
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H01S3/1686 3 {Liquid crystal active layer}
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H01S3/1688 3 {Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant}
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H01S3/169 3 {Nanoparticles, e.g. doped nanoparticles acting as a gain material}
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H01S3/1691 3 {characterised by additives / sensitisers / promoters as further dopants}
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H01S3/1693 4 {aluminium}
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H01S3/1695 4 {germanium}
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H01S3/1696 4 {transition metal}
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H01S3/1698 4 {rare earth}
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H01S3/17 3 amorphous, e.g. glass
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H01S3/171 4 {chalcogenide glass}
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H01S3/172 4 {selenide glass}
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H01S3/173 4 {fluoride glass, e.g. fluorozirconate or ZBLAN [ ZrF4-BaF2-LaF3-AlF3-NaF]}
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H01S3/175 4 {phosphate glass}
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H01S3/176 4 {silica or silicate glass}
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H01S3/177 4 {telluride glass}
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H01S3/178 4 {plastic}
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H01S3/20 2 Liquids
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H01S3/207 3 including a chelate {, e.g. including atoms or ions, e.g. Nd}
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H01S3/213 3 including an organic dye
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H01S3/22 2 Gases
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H01S3/2207 3 {Noble gas ions, e.g. Ar+>, Kr+>}
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H01S3/2215 3 {Iodine compounds or atomic iodine}
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H01S3/2222 3 {Neon, e.g. in helium-neon (He-Ne) systems}
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H01S3/223 3 the active gas being polyatomic, i.e. containing two or more atoms (H01S3/227 takes precedence)
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H01S3/2232 4 {Carbon dioxide (CO2) or monoxide [CO]}
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H01S3/2235 4 {Dye vapour}
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H01S3/2237 4 {Molecular nitrogen (N2), e.g. in noble gas-N2 systems}
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H01S3/225 4 comprising an excimer or exciplex
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H01S3/2251 5 {ArF, i.e. argon fluoride is comprised for lasing around 193 nm}
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H01S3/2253 5 {XeCl, i.e. xenon chloride is comprised for lasing around 308 nm}
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H01S3/2255 5 {XeF, i.e. xenon fluoride is comprised for lasing around 351 nm}
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H01S3/2256 5 {KrF, i.e. krypton fluoride is comprised for lasing around 248 nm}
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H01S3/2258 5 {F2, i.e. molecular fluoride is comprised for lasing around 157 nm}
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H01S3/227 3 Metal vapour
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H01S3/23 1 Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
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H01S3/2308 2 {Amplifier arrangements, e.g. MOPA}
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H01S3/2316 3 {Cascaded amplifiers}
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H01S3/2325 3 {Multi-pass amplifiers, e.g. regenerative amplifiers}
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H01S3/2333 4 {Double-pass amplifiers}
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H01S3/2341 4 {Four pass amplifiers}
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H01S3/235 4 {Regenerative amplifiers}
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H01S3/2358 2 {comprising dyes as the active medium}
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H01S3/2366 2 {comprising a gas as the active medium (H01S3/10092, H01S3/2383 take precedence)}
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H01S3/2375 2 {Hybrid lasers (H01S3/07 takes precedence)}
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H01S3/2383 2 {Parallel arrangements}
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H01S3/2391 3 {emitting at different wavelengths}
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H01S3/30 1 using scattering effects, e.g. stimulated Brillouin or Raman effects
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H01S3/302 2 {in an optical fibre}
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H01S3/305 2 {in a gas}
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H01S3/307 2 {in a liquid}
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H01S4/00 0 Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
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H01S5/00 0 Semiconductor lasers (superluminescent diodes H01L33/00)
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H01S5/0014 1 {Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R)}
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H01S5/0021 2 {Degradation or life time measurements}
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H01S5/0028 2 {Laser diodes used as detectors}
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H01S5/0035 2 {Simulations of laser characteristics}
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H01S5/0042 2 {On wafer testing, e.g. lasers are tested before separating wafer into chips}
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H01S5/005 1 {Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping (H01S5/026, H01S5/18388 take precedence)}
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H01S5/0057 2 {for temporal shaping, e.g. pulse compression, frequency chirping}
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H01S5/0064 2 {Anti-reflection components, e.g. optical isolators}
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H01S5/0071 2 {for beam steering, e.g. using a mirror outside the cavity to change the beam direction}
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H01S5/0078 2 {for frequency filtering}
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H01S5/0085 2 {for modulating the output, i.e. the laser beam is modulated outside the laser cavity}
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H01S5/0087 2 {for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials}
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H01S5/0092 2 {for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity}
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H01S5/02 1 Structural details or components not essential to laser action
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H01S5/0201 2 {Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth}
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H01S5/0202 3 {Cleaving}
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H01S5/0203 3 {Etching}
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H01S5/0205 3 {during growth of the semiconductor body}
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H01S5/0206 2 {Substrates, e.g. growth, shape, material, removal or bonding; (specific crystal orientation H01S5/3202)}
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H01S5/0207 3 {Substrates having a special shape}
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H01S5/0208 3 {Semi-insulating substrates}
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H01S5/021 3 {Silicon based substrates}
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H01S5/0211 3 {Substrates made of ternary or quaternary compounds}
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H01S5/0212 4 {with a graded composition}
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H01S5/0213 3 {Sapphire, quartz or diamond based substrates}
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H01S5/0215 3 {Bonding to the substrate}
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H01S5/0216 4 {using an intermediate compound, e.g. a glue or solder}
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H01S5/0217 3 {Removal of the substrate}
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H01S5/0218 3 {Substrates comprising semiconducting materials from different groups of the periodic system than the active layer}
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H01S5/022 2 Mountings; Housings
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H01S5/02208 3 characterised by the shape of the housings
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H01S5/02212 4 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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H01S5/02216 4 Butterfly-type, i.e. with electrode pins extending horizontally from the housings
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H01S5/02218 3 Material of the housings; Filling of the housings
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H01S5/0222 4 Gas-filled housings
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H01S5/02224 5 the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets
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H01S5/02232 4 Liquid-filled housings
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H01S5/02234 4 Resin-filled housings; the housings being made of resin
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H01S5/02235 3 Getter material for absorbing contamination
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H01S5/0225 3 Out-coupling of light
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H01S5/02251 4 using optical fibres
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H01S5/02253 4 using lenses
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H01S5/02255 4 using beam deflecting elements
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H01S5/02257 4 using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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H01S5/023 3 Mount members, e.g. sub-mount members
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H01S5/0231 4 Stems
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H01S5/02315 4 Support members, e.g. bases or carriers
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H01S5/0232 4 Lead-frames
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H01S5/02325 4 Mechanically integrated components on mount members or optical micro-benches
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H01S5/02326 5 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
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H01S5/0233 3 Mounting configuration of laser chips
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H01S5/02335 4 Up-side up mountings, e.g. epi-side up mountings or junction up mountings
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H01S5/0234 4 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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H01S5/02345 4 Wire-bonding
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H01S5/0235 3 Method for mounting laser chips
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H01S5/02355 4 Fixing laser chips on mounts
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H01S5/0236 5 using an adhesive
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H01S5/02365 5 by clamping
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H01S5/0237 5 by soldering
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H01S5/02375 4 Positioning of the laser chips
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H01S5/0238 5 using marks
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H01S5/02385 5 using laser light as reference
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H01S5/0239 3 Combinations of electrical or optical elements
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H01S5/024 2 Arrangements for thermal management
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H01S5/02407 3 {Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling}
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H01S5/02415 4 {by using a thermo-electric cooler [TEC], e.g. Peltier element}
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H01S5/02423 4 {Liquid cooling, e.g. a liquid cools a mount of the laser}
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H01S5/0243 5 {Laser is immersed in the coolant, i.e. the whole laser chip is immersed in the liquid for cooling}
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H01S5/02438 3 {Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens}
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H01S5/02446 4 {Cooling being separate from the laser chip cooling}
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H01S5/02453 3 {Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment (H01S5/0612 takes precedence, for monolithically integrated heaters see also H01S5/0261)}
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H01S5/02461 3 {Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity}
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H01S5/02469 3 {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC}
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H01S5/02476 3 {Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements}
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H01S5/02484 4 {Sapphire or diamond heat spreaders}
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H01S5/02492 4 {CuW heat spreaders}
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H01S5/026 2 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
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H01S5/0261 3 {Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence)}
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H01S5/0262 3 {Photo-diodes, e.g. transceiver devices, bidirectional devices (H01S5/0265 takes precedence)}
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H01S5/0264 4 {for monitoring the laser-output}
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H01S5/0265 3 {Intensity modulators (intra-cavity modulators H01S5/0625)}
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H01S5/0267 3 {Integrated focusing lens (H01S5/18388 takes precedence)}
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H01S5/0268 3 {Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"}
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H01S5/028 2 Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers}
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H01S5/0281 3 {Coatings made of semiconductor materials}
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H01S5/0282 3 {Passivation layers or treatments}
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H01S5/0283 4 {Optically inactive coating on the facet, e.g. half-wave coating}
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H01S5/0284 3 {Coatings with a temperature dependent reflectivity}
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H01S5/0285 3 {Coatings with a controllable reflectivity}
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H01S5/0286 3 {Coatings with a reflectivity that is not constant over the facets, e.g. apertures}
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H01S5/0287 3 {Facet reflectivity}
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H01S5/0288 4 {Detuned facet reflectivity, i.e. reflectivity peak is different from gain maximum}
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H01S5/04 1 Processes or apparatus for excitation, e.g. pumping, {e.g. by electron beams}(H01S5/06 takes precedence)
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H01S5/041 2 {Optical pumping}
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H01S5/042 2 Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)}
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H01S5/0421 3 {characterised by the semiconducting contacting layers (electrodes H01S5/0425)}
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H01S5/0422 4 {with n- and p-contacts on the same side of the active layer}
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H01S5/0424 5 {lateral current injection}
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H01S5/0425 3 {Electrodes, e.g. characterised by the structure}
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H01S5/04252 4 {characterised by the material}
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H01S5/04253 5 {having specific optical properties, e.g. transparent electrodes}
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H01S5/04254 4 {characterised by the shape}
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H01S5/04256 4 {characterised by the configuration}
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H01S5/04257 5 {having positive and negative electrodes on the same side of the substrate}
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H01S5/0427 3 {for applying modulation to the laser}
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H01S5/0428 3 {for applying pulses to the laser}
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H01S5/06 1 Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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H01S5/0601 2 {comprising an absorbing region (H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026)}
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H01S5/0602 3 {which is an umpumped part of the active layer}
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H01S5/0604 2 {comprising a non-linear region, e.g. generating harmonics of the laser frequency}
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H01S5/0605 3 {Self doubling, e.g. lasing and frequency doubling by the same active medium}
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H01S5/0607 2 {by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature}
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H01S5/0608 3 {controlled by light, e.g. optical switch}
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H01S5/0609 4 {acting on an absorbing region, e.g. wavelength convertors}
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H01S5/0611 5 {wavelength convertors}
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H01S5/0612 3 {controlled by temperature}
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H01S5/0614 3 {controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect}
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H01S5/0615 2 {Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed}
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H01S5/0617 2 {using memorised or pre-programmed laser characteristics}
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H01S5/0618 2 {Details on the linewidth enhancement parameter alpha}
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H01S5/062 2 by varying the potential of the electrodes (H01S5/065 takes precedence)
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H01S5/06203 3 {Transistor-type lasers (H01S5/0608 takes precedence)}
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H01S5/06206 4 {Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]}
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H01S5/06209 3 {in single-section lasers (H01S5/0608 takes precedence)}
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H01S5/06213 4 {Amplitude modulation}
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H01S5/06216 4 {Pulse modulation or generation}
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H01S5/0622 4 {Controlling the frequency of the radiation}
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H01S5/06223 3 {using delayed or positive feedback}
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H01S5/06226 3 {Modulation at ultra-high frequencies}
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H01S5/0623 4 {using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing}
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H01S5/06233 3 {Controlling other output parameters than intensity or frequency}
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H01S5/06236 4 {controlling the polarisation, e.g. TM/TE polarisation switching}
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H01S5/0624 4 {controlling the near- or far field}
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H01S5/06243 4 {controlling the position or direction of the emitted beam}
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H01S5/06246 4 {controlling the phase}
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H01S5/0625 3 in multi-section lasers
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H01S5/06251 4 {Amplitude modulation}
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H01S5/06253 4 {Pulse modulation}
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H01S5/06255 4 {Controlling the frequency of the radiation}
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H01S5/06256 5 {with DBR-structure}
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H01S5/06258 5 {with DFB-structure}
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H01S5/065 2 Mode locking; Mode suppression; Mode selection {; Self pulsating}
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H01S5/0651 3 {Mode control}
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H01S5/0652 4 {Coherence lowering or collapse, e.g. multimode emission by additional input or modulation}
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H01S5/0653 4 {Mode suppression, e.g. specific multimode}
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H01S5/0654 5 {Single longitudinal mode emission}
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H01S5/0655 5 {Single transverse or lateral mode emission}
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H01S5/0656 3 {Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component (H01S5/14, H01S5/4062 and H01S5/4006 take precedence)}
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H01S5/0657 3 {Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity}
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H01S5/0658 3 {Self-pulsating}
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H01S5/068 2 Stabilisation of laser output parameters (H01S5/0625 takes precedence)
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H01S5/06804 3 {by monitoring an external parameter, e.g. temperature}
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H01S5/06808 3 {by monitoring the electrical laser parameters, e.g. voltage or current}
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H01S5/06812 3 {by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics}
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H01S5/06817 3 {Noise reduction}
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H01S5/06821 3 {Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields}
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H01S5/06825 3 {Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation}
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H01S5/0683 3 by monitoring the optical output parameters
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H01S5/06832 4 {Stabilising during amplitude modulation}
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H01S5/06835 4 {Stabilising during pulse modulation or generation}
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H01S5/06837 4 {Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature}
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H01S5/0687 4 Stabilising the frequency of the laser
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H01S5/10 1 Construction or shape of the optical resonator {, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region (H01S5/20 takes precedence)}
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H01S5/1003 2 {Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids}
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H01S5/1007 3 {Branched waveguides}
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H01S5/101 3 {Curved waveguide (H01S5/1243 takes precedence)}
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H01S5/1014 3 {Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence)}
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H01S5/1017 3 {Waveguide having a void for insertion of materials to change optical properties}
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H01S5/1021 2 {Coupled cavities (H01S5/14 takes precedence)}
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H01S5/1025 2 {Extended cavities}
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H01S5/1028 2 {Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures}
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H01S5/1032 3 {Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region}
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H01S5/1035 4 {Forward coupled structures [DFC]}
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H01S5/1039 2 {Details on the cavity length}
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H01S5/1042 2 {Optical microcavities, e.g. cavity dimensions comparable to the wavelength}
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H01S5/1046 2 {Comprising interactions between photons and plasmons, e.g. by a corrugated surface}
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H01S5/1053 2 {Comprising an active region having a varying composition or cross-section in a specific direction}
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H01S5/1057 3 {varying composition along the optical axis}
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H01S5/106 3 {varying thickness along the optical axis}
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H01S5/1064 3 {varying width along the optical axis}
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H01S5/1067 3 {comprising nanoparticles}
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H01S5/1071 2 {Ring-lasers}
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H01S5/1075 3 {Disk lasers with special modes, e.g. whispering gallery lasers}
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H01S5/1078 2 {with means to control the spontaneous emission, e.g. reducing or reinjection}
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H01S5/1082 2 {with a special facet structure, e.g. structured, non planar, oblique}
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H01S5/1085 3 {Oblique facets}
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H01S5/1089 2 {Unstable resonators}
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H01S5/1092 2 {Multi-wavelength lasing}
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H01S5/1096 3 {in a single cavity}
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H01S5/11 2 Comprising a photonic bandgap structure
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H01S5/12 2 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18)
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H01S5/1203 3 {over only a part of the length of the active region}
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H01S5/1206 3 {having a non constant or multiplicity of periods}
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H01S5/1209 4 {Sampled grating}
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H01S5/1212 4 {Chirped grating}
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H01S5/1215 4 {Multiplicity of periods}
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H01S5/1218 5 {in superstructured configuration, e.g. more than one period in an alternate sequence}
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H01S5/1221 3 {Detuning between Bragg wavelength and gain maximum}
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H01S5/1225 3 {with a varying coupling constant along the optical axis}
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H01S5/1228 3 {DFB lasers with a complex coupled grating, e.g. gain or loss coupling}
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H01S5/1231 3 {Grating growth or overgrowth details}
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H01S5/1234 3 {Actively induced grating, e.g. acoustically or electrically induced}
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H01S5/1237 3 {Lateral grating, i.e. grating only adjacent ridge or mesa}
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H01S5/124 3 {incorporating phase shifts}
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H01S5/1243 4 {by other means than a jump in the grating period, e.g. bent waveguides}
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H01S5/1246 4 {plurality of phase shifts}
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H01S5/125 3 Distributed Bragg reflector [DBR] lasers
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H01S5/14 2 External cavity lasers (H01S5/18 takes precedence; mode locking H01S5/065)
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H01S5/141 3 {using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence)}
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H01S5/142 4 {which comprises an additional resonator}
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H01S5/143 4 {Littman-Metcalf configuration, e.g. laser - grating - mirror}
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H01S5/145 3 {Phase conjugate mirrors}
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H01S5/146 3 {using a fiber as external cavity}
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H01S5/147 4 {having specially shaped fibre, e.g. lensed or tapered end portion}
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H01S5/148 3 {using a Talbot cavity}
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H01S5/16 2 Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence)
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H01S5/162 3 {with window regions made by diffusion or disordening of the active layer}
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H01S5/164 3 {with window regions comprising semiconductor material with a wider bandgap than the active layer}
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H01S5/166 3 {with window regions comprising non-semiconducting materials}
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H01S5/168 3 {with window regions comprising current blocking layers}
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H01S5/18 2 Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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H01S5/183 3 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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H01S5/18302 4 {comprising an integrated optical modulator}
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H01S5/18305 4 {with emission through the substrate, i.e. bottom emission}
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H01S5/18308 4 {having a special structure for lateral current or light confinement}
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H01S5/18311 5 {using selective oxidation}
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H01S5/18313 6 {by oxidizing at least one of the DBR layers}
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H01S5/18316 5 {Airgap confined}
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H01S5/18319 5 {comprising a periodical structure in lateral directions}
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H01S5/18322 5 {Position of the structure}
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H01S5/18325 6 {Between active layer and substrate}
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H01S5/18327 6 {Structure being part of a DBR (H01S5/18391 takes precedence)}
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H01S5/1833 6 {with more than one structure}
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H01S5/18333 7 {only above the active layer}
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H01S5/18336 7 {only below the active layer}
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H01S5/18338 5 {Non-circular shape of the structure}
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H01S5/18341 4 {Intra-cavity contacts}
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H01S5/18344 4 {characterized by the mesa, e.g. dimensions or shape of the mesa}
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H01S5/18347 5 {Mesa comprising active layer}
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H01S5/1835 5 {Non-circular mesa}
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H01S5/18352 5 {Mesa with inclined sidewall}
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H01S5/18355 4 {having a defined polarisation}
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H01S5/18358 4 {containing spacer layers to adjust the phase of the light wave in the cavity}
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H01S5/18361 4 {Structure of the reflectors, e.g. hybrid mirrors}
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H01S5/18363 5 {comprising air layers}
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H01S5/18366 6 {Membrane DBR, i.e. a movable DBR on top of the VCSEL}
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H01S5/18369 5 {based on dielectric materials}
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H01S5/18372 6 {by native oxidation}
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H01S5/18375 5 {based on metal reflectors}
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H01S5/18377 5 {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers}
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H01S5/1838 5 {Reflector bonded by wafer fusion or by an intermediate compound}
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H01S5/18383 4 {with periodic active regions at nodes or maxima of light intensity}
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H01S5/18386 4 {Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface}
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H01S5/18388 5 {Lenses}
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H01S5/18391 5 {Aperiodic structuring to influence the near- or far-field distribution}
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H01S5/18394 5 {Apertures, e.g. defined by the shape of the upper electrode}
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H01S5/18397 4 {Plurality of active layers vertically stacked in a cavity for multi-wavelength emission}
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H01S5/185 3 having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] (comprising a photonic bandgap structure H01S5/11)
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H01S5/187 4 using Bragg reflection
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H01S5/20 1 Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers}
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H01S5/2004 2 {Confining in the direction perpendicular to the layer structure}
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H01S5/2009 3 {by using electron barrier layers}
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H01S5/2013 4 {MQW barrier reflection layers}
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H01S5/2018 3 {Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers}
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H01S5/2022 4 {Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes}
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H01S5/2027 4 {Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes}
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H01S5/2031 4 {characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities}
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H01S5/2036 2 {Broad area lasers}
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H01S5/204 2 {Strongly index guided structures}
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H01S5/2045 3 {employing free standing waveguides or air gap confinement}
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H01S5/205 2 {Antiguided structures}
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H01S5/2054 2 {Methods of obtaining the confinement}
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H01S5/2059 3 {by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion}
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H01S5/2063 4 {obtained by particle bombardment}
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H01S5/2068 4 {obtained by radiation treatment or annealing}
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H01S5/2072 4 {obtained by vacancy induced diffusion}
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H01S5/2077 3 {using lateral bandgap control during growth, e.g. selective growth, mask induced}
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H01S5/2081 3 {using special etching techniques}
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H01S5/2086 4 {lateral etch control, e.g. mask induced}
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H01S5/209 4 {special etch stop layers}
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H01S5/2095 3 {using melting or mass transport}
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H01S5/22 2 having a ridge or stripe structure
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H01S5/2201 3 {in a specific crystallographic orientation}
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H01S5/2202 3 {by making a groove in the upper laser structure}
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H01S5/2203 3 {with a transverse junction stripe [TJS] structure}
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H01S5/2205 3 {comprising special burying or current confinement layers}
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H01S5/2206 4 {based on III-V materials}
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H01S5/2207 5 {GaAsP based}
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H01S5/2209 5 {GaInP based}
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H01S5/221 5 {containing aluminium}
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H01S5/2211 4 {based on II-VI materials}
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H01S5/2213 4 {based on polyimide or resin}
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H01S5/2214 4 {based on oxides or nitrides}
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H01S5/2215 5 {using native oxidation of semiconductor layers}
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H01S5/2216 5 {nitrides}
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H01S5/2218 4 {having special optical properties}
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H01S5/2219 5 {absorbing}
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H01S5/222 5 {having a refractive index lower than that of the cladding layers or outer guiding layers}
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H01S5/2222 4 {having special electric properties}
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H01S5/2223 5 {hetero barrier blocking layers, e.g. P-P or N-N}
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H01S5/2224 5 {semi-insulating semiconductors}
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H01S5/2226 5 {semiconductors with a specific doping}
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H01S5/2227 5 {special thin layer sequence}
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H01S5/2228 6 {quantum wells}
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H01S5/223 3 Buried stripe structure {(H01S5/227 takes precedence)}
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H01S5/2231 4 {with inner confining structure only between the active layer and the upper electrode}
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H01S5/2232 4 {with inner confining structure between the active layer and the lower electrode}
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H01S5/2234 5 {having a structured substrate surface}
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H01S5/2235 6 {with a protrusion}
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H01S5/2237 4 {with a non-planar active layer}
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H01S5/2238 4 {with a terraced structure}
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H01S5/227 3 Buried mesa structure {; Striped active layer}
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H01S5/2272 4 {grown by a mask induced selective growth}
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H01S5/2275 4 {mesa created by etching}
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H01S5/2277 5 {double channel planar buried heterostructure [DCPBH] laser}
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H01S5/24 2 having a grooved structure, e.g. V-grooved {, crescent active layer in groove, VSIS laser}
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H01S5/30 1 Structure or shape of the active region; Materials used for the active region
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H01S5/3004 2 {employing a field effect structure for inducing charge-carriers, e.g. FET}
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H01S5/3009 3 {MIS or MOS conffigurations}
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H01S5/3013 2 {AIIIBV compounds}
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H01S5/3018 2 {AIIBVI compounds}
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H01S5/3022 2 {AIVBVI compounds}
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H01S5/3027 2 {IV compounds}
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H01S5/3031 3 {Si}
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H01S5/3036 4 {SiC}
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H01S5/304 4 {porous Si}
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H01S5/3045 3 {diamond}
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H01S5/305 2 {characterised by the doping materials used in the laser structure}
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H01S5/3054 3 {p-doping}
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H01S5/3059 4 {in II-VI materials}
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H01S5/3063 4 {using Mg}
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H01S5/3068 3 {deep levels}
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H01S5/3072 3 {Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants}
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H01S5/3077 3 {plane dependent doping}
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H01S5/3081 4 {using amphoteric doping}
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H01S5/3086 3 {doping of the active layer}
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H01S5/309 4 {doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407)}
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H01S5/3095 3 {Tunnel junction}
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H01S5/32 2 comprising PN junctions, e.g. hetero- or double- heterostructures (H01S5/34, H01S5/36 take precedence)
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H01S5/3201 3 {incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation}
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H01S5/3202 3 {grown on specifically orientated substrates, or using orientation dependent growth}
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H01S5/320225 4 {polar orientation}
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H01S5/32025 4 {non-polar orientation}
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H01S5/320275 4 {semi-polar orientation}
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H01S5/3203 4 {on non-planar substrates to create thickness or compositional variations}
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H01S5/3205 3 {with an active layer having a graded composition in the growth direction}
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H01S5/3206 3 {ordering or disordering the natural superlattice in ternary or quaternary materials}
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H01S5/3207 4 {ordered active layer}
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H01S5/3209 4 {disordered active layer}
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H01S5/321 3 {having intermediate bandgap layers}
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H01S5/3211 3 {characterised by special cladding layers, e.g. details on band-discontinuities}
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H01S5/3213 4 {asymmetric clading layers}
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H01S5/3214 4 {comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer}
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H01S5/3215 4 {graded composition cladding layers}
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H01S5/3216 4 {quantum well or superlattice cladding layers}
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H01S5/3218 4 {specially strained cladding layers, other than for strain compensation}
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H01S5/3219 4 {explicitly Al-free cladding layers}
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H01S5/322 3 {type-II junctions}
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H01S5/3222 3 {in AIVBVI compounds, e.g. PbSSe-laser}
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H01S5/3223 3 {IV compounds}
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H01S5/3224 4 {Si}
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H01S5/3226 5 {SiC}
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H01S5/3227 5 {porous Si}
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H01S5/3228 4 {diamond}
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H01S5/323 3 in AIIIBV compounds, e.g. AlGaAs-laser, {InP-based laser}
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H01S5/32308 4 {emitting light at a wavelength less than 900 nm}
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H01S5/32316 5 {comprising only (Al)GaAs}
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H01S5/32325 5 {red laser based on InGaP}
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H01S5/32333 5 {based on InGaAsP}
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H01S5/32341 5 {blue laser based on GaN or GaP}
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H01S5/3235 4 {emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers}
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H01S5/32358 5 {containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect}
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H01S5/32366 6 {(In)GaAs with small amount of N}
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H01S5/32375 6 {In(As)N with small amount of P, or In(As)P with small amount of N}
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H01S5/32383 6 {small amount of Thallum (TI), e.g. GaTIP}
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H01S5/32391 5 {based on In(Ga)(As)P}
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H01S5/327 3 in AIIBVI compounds, e.g. ZnCdSe-laser
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H01S5/34 2 comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence)
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H01S5/3401 3 {having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers}
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H01S5/3402 4 {intersubband lasers, e.g. transitions within the conduction or valence bands}
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H01S5/3403 3 {having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation}
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H01S5/3404 4 {influencing the polarisation}
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H01S5/3406 4 {including strain compensation}
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H01S5/3407 3 {characterised by special barrier layers}
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H01S5/3408 3 {characterised by specially shaped wells, e.g. triangular}
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H01S5/3409 3 {special GRINSCH structures}
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H01S5/341 3 {Structures having reduced dimensionality, e.g. quantum wires}
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H01S5/3412 4 {quantum box or quantum dash}
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H01S5/3413 3 {comprising partially disordered wells or barriers}
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H01S5/3414 4 {by vacancy induced interdiffusion}
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H01S5/3415 3 {containing details related to carrier capture times into wells or barriers}
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H01S5/3416 4 {tunneling through barriers}
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H01S5/3418 3 {using transitions from higher quantum levels}
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H01S5/3419 4 {intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures}
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H01S5/342 3 {containing short period superlattices [SPS]}
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H01S5/3421 3 {layer structure of quantum wells to influence the near/far field}
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H01S5/3422 3 {comprising type-II quantum wells or superlattices}
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H01S5/3424 3 {comprising freestanding wells}
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H01S5/3425 3 {comprising couples wells or superlattices}
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H01S5/3426 3 {in AIVBVI compounds, e.g. PbSSe-laser}
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H01S5/3427 3 {in IV compounds}
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H01S5/3428 3 {layer orientation perpendicular to the substrate}
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H01S5/343 3 in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
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H01S5/34306 4 {emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers}
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H01S5/34313 4 {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
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H01S5/3432 5 {the whole junction comprising only (AI)GaAs}
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H01S5/34326 4 {with a well layer based on InGa(Al)P, e.g. red laser}
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H01S5/34333 4 {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
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H01S5/3434 4 {with a well layer comprising at least both As and P as V-compounds}
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H01S5/34346 4 {characterised by the materials of the barrier layers}
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H01S5/34353 5 {based on (AI)GaAs}
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H01S5/3436 5 {based on InGa(Al)P}
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H01S5/34366 5 {based on InGa(Al)AS}
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H01S5/34373 5 {based on InGa(Al)AsP}
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H01S5/3438 5 {based on In(Al)P}
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H01S5/34386 5 {explicitly Al-free}
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H01S5/34393 5 {not only based on AIIIBV compounds}
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H01S5/347 3 in AIIBVI compounds, e.g. ZnCdSe- laser
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H01S5/36 2 comprising organic materials
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H01S5/40 1 Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30 (H01S5/50 takes precedence)
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H01S5/4006 2 {Injection locking}
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H01S5/4012 2 {Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms}
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H01S5/4018 2 {Lasers electrically in series}
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H01S5/4025 2 {Array arrangements, e.g. constituted by discrete laser diodes or laser bar (H01S5/42 takes precedence)}
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H01S5/4031 3 {Edge-emitting structures}
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H01S5/4037 4 {with active layers in more than one orientation}
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H01S5/4043 4 {with vertically stacked active layers}
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H01S5/405 5 {Two-dimensional arrays}
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H01S5/4056 4 {emitting light in more than one direction}
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H01S5/4062 4 {with an external cavity or using internal filters, e.g. Talbot filters}
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H01S5/4068 4 {with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers}
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H01S5/4075 3 {Beam steering}
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H01S5/4081 3 {Near-or far field control}
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H01S5/4087 3 {emitting more than one wavelength}
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H01S5/4093 4 {Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion}
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H01S5/42 2 Arrays of surface emitting lasers
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H01S5/423 3 {having a vertical cavity}
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H01S5/426 4 {Vertically stacked cavities}
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H01S5/50 1 Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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H01S5/5009 2 {the arrangement being polarisation-insensitive}
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H01S5/5018 3 {using two or more amplifiers or multiple passes through the same amplifier}
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H01S5/5027 2 {Concatenated amplifiers, i.e. amplifiers in series or cascaded}
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H01S5/5036 2 {the arrangement being polarisation-selective}
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H01S5/5045 2 {the arrangement having a frequency filtering function}
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H01S5/5054 2 {in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing}
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H01S5/5063 2 {operating above threshold}
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H01S5/5072 3 {Gain clamping, i.e. stabilisation by saturation using a further mode or frequency}
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H01S5/5081 2 {specifically standing wave amplifiers}
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H01S5/509 2 {Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation}
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H01S2301/00 0 Functional characteristics
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H01S2301/02 1 ASE (amplified spontaneous emission), noise; Reduction thereof
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H01S2301/03 1 Suppression of nonlinear conversion, e.g. specific design to suppress for example stimulated brillouin scattering [SBS], mainly in optical fibres in combination with multimode pumping
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H01S2301/04 1 Gain spectral shaping, flattening
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H01S2301/06 1 Gain non-linearity, distortion; Compensation thereof
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H01S2301/08 1 Generation of pulses with special temporal shape or frequency spectrum
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H01S2301/085 2 solitons
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H01S2301/14 1 Semiconductor lasers with special structural design for lasing in a specific polarisation mode
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H01S2301/145 2 TM polarisation
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H01S2301/16 1 Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
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H01S2301/163 2 Single longitudinal mode
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H01S2301/166 2 Single transverse or lateral mode
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H01S2301/17 1 Semiconductor lasers comprising special layers
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H01S2301/173 2 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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H01S2301/176 2 Specific passivation layers on surfaces other than the emission facet
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H01S2301/18 1 Semiconductor lasers with special structural design for influencing the near- or far-field
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H01S2301/185 2 for reduction of Astigmatism
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H01S2301/20 1 Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
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H01S2301/203 2 with at least one hole in the intensity distribution, e.g. annular or doughnut mode
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H01S2301/206 2 Top hat profile
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H01S2302/00 0 Amplification / lasing wavelength
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H01S2302/02 1 THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
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H01S2303/00 0 Pumping wavelength
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H01S2304/00 0 Special growth methods for semiconductor lasers
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H01S2304/02 1 MBE
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H01S2304/025 2 MOMBE
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H01S2304/04 1 MOCVD or MOVPE
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H01S2304/06 1 LPE
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H01S2304/10 1 CBE
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H01S2304/12 1 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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H01T SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
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H01T1/00 0 Details of spark gaps
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H01T1/02 1 Means for extinguishing arc
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H01T1/04 2 using magnetic blow-out
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H01T1/06 3 with permanent magnet
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H01T1/08 2 using flow of arc-extinguishing fluid
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H01T1/10 3 with extinguishing fluid evolved from solid material by heat of arc
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H01T1/12 1 Means structurally associated with spark gap for recording operation thereof
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H01T1/14 1 Means structurally associated with spark gap for protecting it against overload or for disconnecting it in case of failure (H01T1/15, H01T1/16, H01T1/18 take precedence; emergency protective circuit arrangements for spark gap arrestors H02H7/24)
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H01T1/15 1 for protection against excessive pressure
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H01T1/16 1 Series resistor structurally associated with spark gap
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H01T1/18 1 Electrolytic device structurally associated with spark gap
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H01T1/20 1 Means for starting arc or facilitating ignition of spark gap
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H01T1/22 2 by the shape or the composition of the electrodes
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H01T1/24 1 Selection of materials for electrodes (H01T1/22 takes precedence)
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H01T2/00 0 Spark gaps comprising auxiliary triggering means (triggering circuits H01T15/00)
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H01T2/02 1 comprising a trigger electrode or an auxiliary spark gap
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H01T4/00 0 Overvoltage arresters using spark gaps (H01T2/00 takes precedence; overvoltage protection circuits using spark gaps H02H9/06)
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H01T4/02 1 Details
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H01T4/04 1 Housings (H01T4/06 takes precedence)
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H01T4/06 1 Mounting arrangements for a plurality of overvoltage arresters
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H01T4/08 1 structurally associated with protected apparatus (with switches H01H9/14; with fuses H01H85/44)
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H01T4/10 1 having a single gap or a plurality of gaps in parallel
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H01T4/12 2 hermetically sealed
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H01T4/14 2 Arcing horns (associated with insulators H01B17/46)
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H01T4/16 1 having a plurality of gaps arranged in series
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H01T4/18 2 Arrangements for reducing height of stacked spark gaps
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H01T4/20 2 Arrangements for improving potential distribution
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H01T7/00 0 Rotary spark gaps, i.e. devices having one or more rotating electrodes
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H01T9/00 0 Spark gaps specially adapted for generating oscillations
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H01T11/00 0 Spark gaps specially adapted as rectifiers
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H01T13/00 0 Sparking plugs
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H01T13/02 1 Details
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H01T13/04 2 Means providing electrical connection to sparking plugs
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H01T13/05 3 combined with interference suppressing or shielding means
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H01T13/06 2 Covers forming a part of the plug and protecting it against adverse environment
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H01T13/08 2 Mounting, fixing or sealing of sparking plugs, e.g. in combustion chamber
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H01T13/10 3 by bayonet-type connection
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H01T13/12 2 Means on sparking plugs for facilitating engagement by tool or by hand
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H01T13/14 2 Means for self-cleaning
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H01T13/16 2 Means for dissipating heat
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H01T13/18 2 Means for heating, e.g. for drying
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H01T13/20 1 characterised by features of the electrodes or insulation
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H01T13/22 2 having two or more electrodes embedded in insulation (sparking plugs having two or more spark gaps H01T13/46)
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H01T13/24 2 having movable electrodes (H01T13/28 takes precedence)
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H01T13/26 3 for adjusting spark gap otherwise than by bending of electrode
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H01T13/28 2 having spherically shaped electrodes, e.g. ball-shaped
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H01T13/30 3 mounted so as to permit free movement
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H01T13/32 2 characterised by features of the earthed electrode
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H01T13/34 2 characterised by the mounting of electrodes in insulation, e.g. by embedding
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H01T13/36 2 characterised by the joint between insulation and body, e.g. using cement
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H01T13/38 2 Selection of materials for insulation
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H01T13/39 2 Selection of materials for electrodes
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H01T13/40 1 structurally combined with other devices (combined or associated with fuel injectors F02M57/06; structurally combined with other parts of internal-combustion engines F02P13/00)
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H01T13/41 2 with interference suppressing or shielding means
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H01T13/42 2 with magnetic spark generators
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H01T13/44 2 with transformers, e.g. for high-frequency ignition
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H01T13/46 1 having two or more spark gaps
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H01T13/462 2 {in series connection}
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H01T13/465 3 {one spark gap being incorporated in the sparking plug}
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H01T13/467 2 {in parallel connection}
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H01T13/48 1 having means for rendering sparks visible
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H01T13/50 1 having means for ionisation of gap (H01T13/52 takes precedence)
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H01T13/52 1 characterised by a discharge along a surface
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H01T13/54 1 having electrodes arranged in a partly-enclosed ignition chamber
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H01T13/56 1 characterised by having component parts which are easily assembled or disassembled
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H01T13/58 1 Testing (testing characteristics of the spark in internal-combustion engine ignition F02P17/12)
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H01T13/60 2 of electrical properties
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H01T14/00 0 Spark gaps not provided for in groups H01T2/00 - H01T13/00 (devices providing for corona discharge H01T19/00)
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H01T15/00 0 Circuits specially adapted for spark gaps, e.g. ignition circuits (ignition circuits for internal-combustion engines F02P; electric spark ignition for combustion apparatus F23Q; protection circuits using spark gaps H02H9/06)
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H01T19/00 0 Devices providing for corona discharge (for charging electrographic elements G03G15/02)
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H01T19/02 1 Corona rings
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H01T19/04 1 having pointed electrodes
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H01T21/00 0 Apparatus or processes specially adapted for the manufacture or maintenance of spark gaps or sparking plugs
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H01T21/02 1 of sparking plugs
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H01T21/04 2 Cleaning (means for self-cleaning H01T13/14; abrasive blasting devices for cleaning sparking-plugs B24C3/34)
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H01T21/06 1 Adjustment of spark gaps (sparking-plugs having movable electrodes for adjusting the gap H01T13/26)
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H01T23/00 0 Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
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H02 GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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H02B BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
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H02B1/00 0 Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements
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H02B1/01 1 Frameworks
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H02B1/011 2 {Open support bases}
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H02B1/012 2 {Details of mechanical connections}
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H02B1/013 2 {Profiles for cabinet frames}
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H02B1/014 2 {Corner connections for frameworks}
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H02B1/015 1 Boards, panels, desks; Parts thereof or accessories therefor
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H02B2001/0155 2 {Removable shutters for non-used openings}
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H02B1/03 2 for energy meters
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H02B1/04 2 Mounting thereon of switches or of other devices in general, the switch or device having, or being without, casing
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H02B1/041 3 {Mechanical coupling for side-by-side mounted apparatus}
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H02B1/042 3 {Mounting on perforated supports by means of screws or locking members}
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H02B1/043 4 {the perforated support having openings distributed according to a pattern}
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H02B1/044 3 Mounting through openings
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H02B1/048 4 Snap mounting
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H02B1/052 3 Mounting on rails
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H02B1/0523 4 {locked into position by a sliding member}
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H02B1/0526 4 {locking or releasing devices actuated from the front face of the apparatus}
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H02B1/056 3 Mounting on plugboards
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H02B1/0565 4 {by means of an adapter carrying one or more apparatuses (holders with sockets H01R33/00)}
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H02B1/06 2 having associated enclosures, e.g. for preventing access to live parts
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H02B1/063 3 {with tamper resistant sealing device}
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H02B1/066 3 {with hinged covers (covers for distribution boxes H02G3/14)}
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H02B1/14 1 Shutters or guards for preventing access to contacts (shielding of isolating-contacts in withdrawable switchgear H02B11/24)
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H02B1/16 1 Earthing arrangements (earthing arrangements for substations H02B5/01; earthing arrangements for switchgear H02B11/28, H02B13/075)
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H02B1/18 1 Disposition or arrangement of fuses (for switchgear having a withdrawable carriage H02B11/26)
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H02B1/20 1 Bus-bar or other wiring layouts, e.g. in cubicles, in switchyards (installations of bus-bars H02G5/00)
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H02B1/202 2 {Cable lay-outs}
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H02B1/205 2 {for connecting electrical apparatus mounted side by side on a rail}
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H02B1/207 2 {Cross-bar layouts}
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H02B1/21 2 Bus-bar arrangements for rack-mounted devices with withdrawable units
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H02B1/22 2 Layouts for duplicate bus-bar selection
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H02B1/24 1 Circuit arrangements for boards or switchyards
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H02B1/26 1 Casings; Parts thereof or accessories therefor
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H02B1/28 2 dustproof, splashproof, drip-proof, waterproof or flameproof
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H02B1/30 2 Cabinet-type casings; Parts thereof or accessories therefor
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H02B1/301 3 {mainly consisting of a frame onto which plates are mounted}
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H02B1/303 3 {Bases or feet}
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H02B1/305 3 {Cable entries}
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H02B1/306 3 {Accessories, e.g. windows}
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H02B1/308 3 {Mounting of cabinets together}
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H02B1/32 3 Mounting of devices therein
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H02B1/34 4 Racks
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H02B1/36 5 with withdrawable units
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H02B1/38 3 Hinged covers or doors
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H02B1/40 2 Wall-mounted casings; Parts thereof or accessories therefor
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H02B1/42 3 Mounting of devices therein
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H02B1/44 3 Hinged covers or doors
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H02B1/46 2 Boxes; Parts thereof or accessories therefor
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H02B1/48 3 Mounting of devices therein
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H02B1/50 2 Pedestal- or pad-mounted casings; Parts thereof or accessories therefor
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H02B1/505 3 {retractable installations}
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H02B1/52 2 Mobile units, e.g. for work sites
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H02B1/54 1 Anti-seismic devices or installations
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H02B1/56 1 Cooling; Ventilation
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H02B1/565 2 {for cabinets}
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H02B3/00 0 Apparatus specially adapted for the manufacture, assembly, or maintenance of boards or switchgear
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H02B5/00 0 Non-enclosed substations; Substations with enclosed and non-enclosed equipment
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H02B5/01 1 Earthing arrangements, e.g. earthing rods
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H02B5/02 1 mounted on pole, e.g. pole transformer substation
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H02B5/06 1 gas-insulated
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H02B7/00 0 Enclosed substations, e.g. compact substations
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H02B7/01 1 gas-insulated
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H02B7/06 1 Distribution substations, e.g. for urban network (H02B7/01 takes precedence)
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H02B7/08 2 Underground substations
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H02B11/00 0 Switchgear having carriage withdrawable for isolation
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H02B11/02 1 Details
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H02B11/04 2 Isolating-contacts, e.g. mountings or shieldings
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H02B11/06 2 Means for duplicate bus-bar selection
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H02B11/08 2 Oil-tank lowering means associated with withdrawal mechanism
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H02B11/10 2 Indicating electrical condition of gear; Arrangement of test sockets
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H02B11/12 1 with isolation by horizontal withdrawal
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H02B11/127 2 Withdrawal mechanism
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H02B11/133 3 with interlock
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H02B11/167 2 truck type (H02B11/127 takes precedence)
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H02B11/173 2 drawer type (H02B11/127 takes precedence)
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H02B11/18 1 with isolation by vertical withdrawal
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H02B11/20 2 having an enclosure
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H02B11/22 3 wherein front of enclosure moves with carriage upon horizontal withdrawal subsequent to isolation
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H02B11/24 1 Shutters or guards
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H02B11/26 1 Arrangements of fuses, resistors, voltage arresters or the like
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H02B11/28 1 Earthing arrangements
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H02B13/00 0 Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle (switchgear having carriage withdrawable for isolation H02B11/00)
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H02B13/005 1 {Electrical connection between switchgear cells}
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H02B13/01 1 with resin casing
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H02B13/02 1 with metal casing
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H02B13/025 2 Safety arrangements, e.g. in case of excessive pressure or fire due to electrical defect
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H02B13/035 2 Gas-insulated switchgear
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H02B13/0352 3 {for three phase switchgear}
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H02B13/0354 3 {comprising a vacuum switch (H02B13/0352 takes precedence)}
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H02B13/0356 3 {Mounting of monitoring devices, e.g. current transformers}
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H02B13/0358 3 {Connections to in or out conductors (connectors in general H01R)}
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H02B13/045 3 Details of casing, e.g. gas tightness
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H02B13/055 3 Features relating to the gas
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H02B13/065 3 Means for detecting or reacting to mechanical or electrical defects
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H02B13/0655 4 {through monitoring changes of gas properties}
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H02B13/075 3 Earthing arrangements
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H02B13/08 1 with stone, brick or concrete casing
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H02B15/00 0 Supervisory desks or panels for centralised control or display
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H02B15/02 1 with mimic diagrams
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H02B15/04 2 consisting of building blocks
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H02B99/00 0 Subject matter not provided for in other groups of this subclass
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H02G INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
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H02G1/00 0 Methods or apparatus specially adapted for installing, maintaining, repairing or dismantling electric cables or lines
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H02G1/005 1 {for cutting cables or wires, or splicing}
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H02G1/02 1 for overhead lines or cables
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H02G1/04 2 for mounting or stretching
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H02G1/06 1 for laying cables, e.g. laying apparatus on vehicle
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H02G1/08 2 through tubing or conduit, e.g. rod or draw wire for pushing or pulling {(inserting electrical cables into tubes using wallbores E21B17/206; for optical cables G02B6/4401)}
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H02G1/081 3 {using pulling means at cable ends, e.g. pulling eyes or anchors}
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H02G1/083 3 {using lines, e.g. needles, rods or tapes}
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H02G1/085 3 {using portable tools}
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H02G1/086 3 {using fluid as pulling means, e.g. liquid, pressurised gas or suction means}
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H02G1/088 3 {using pulling devices movable inside conduits}
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H02G1/10 2 in or under water
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H02G1/12 1 for removing insulation or armouring from cables, e.g. from the end thereof
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H02G1/1202 2 {by cutting and withdrawing insulation}
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H02G1/1204 3 {Hand-held tools}
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H02G1/1207 4 {the cutting element not rotating about the wire or cable (making longitudinal and transverse or helical cut H02G1/1229)}
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H02G1/1209 5 {making a transverse cut}
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H02G1/1212 6 {using wire or cable clamping means}
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H02G1/1214 6 {not using wire or cable clamping means}
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H02G1/1217 5 {making a longitudinal cut}
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H02G1/1219 5 {making a transverse and longitudinal cut}
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H02G1/1221 4 {the cutting element rotating about the wire or cable (making longitudinal and transverse or helical cut H02G1/1229)}
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H02G1/1224 5 {making a transverse cut}
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H02G1/1226 5 {making a helical cut}
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H02G1/1229 4 {the cutting element making a longitudinal, and a transverse or a helical cut}
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H02G1/1231 5 {using a swivelling cutting element}
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H02G1/1234 5 {the tool being of the plier type}
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H02G1/1236 4 {Features relating to cutting elements}
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H02G1/1239 5 {the cutting element being a disc or a circular saw}
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H02G1/1241 5 {the cutting element being a stack of blades}
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H02G1/1243 5 {the cutting element being a wire or filament}
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H02G1/1246 5 {the cutting element being of tubular construction}
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H02G1/1248 3 {Machines}
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H02G1/1251 4 {the cutting element not rotating about the wire or cable (making longitudinal and transverse or helical cut H02G1/1268)}
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H02G1/1253 5 {making a transverse cut}
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H02G1/1256 6 {using wire or cable-clamping means}
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H02G1/1258 6 {not using wire or cable-clamping means}
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H02G1/126 5 {making a longitudinal cut}
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H02G1/1263 5 {making a transverse and longitudinal cut}
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H02G1/1265 4 {the cutting element rotating about the wire or cable (making longitudinal and transverse or helical cut H02G1/1268)}
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H02G1/1268 4 {the cutting element making a longitudinal in combination with a transverse or a helical cut}
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H02G1/127 4 {Features relating to cutting elements}
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H02G1/1273 2 {by pushing backwards insulation}
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H02G1/1275 2 {by applying heat}
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H02G1/1278 3 {using heated blades}
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H02G1/128 3 {using radiant energy, e.g. a laser beam}
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H02G1/1282 3 {removing metallic shields}
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H02G1/1285 2 {by friction, e.g. abrading, grinding, brushing}
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H02G1/1287 2 {by means of a solvent}
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H02G1/129 2 {by means of a cryogenic fluid}
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H02G1/1292 2 {Devices for dismantling twisted filaments}
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H02G1/1295 2 {Devices for splitting and dismantling flat cables}
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H02G1/1297 2 {Removing armouring from cables}
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H02G1/14 1 for joining or terminating cables
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H02G1/145 2 {Moulds}
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H02G1/16 1 for repairing insulation or armouring of cables
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H02G3/00 0 Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles (installations of bus-bars H02G5/00; overhead installations H02G7/00; installations in or on the ground H02G9/00)
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H02G3/02 1 Details
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H02G3/03 2 Cooling
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H02G3/04 2 Protective tubing or conduits, e.g. cable ladders or cable troughs
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H02G3/0406 3 {Details thereof (installation or suspension of conduit channels and other supports H02G3/263)}
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H02G3/0412 4 {Heat or fire protective means (for fire in electric circuits A62C3/16)}
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H02G3/0418 4 {Covers or lids; Their fastenings}
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H02G3/0425 3 {Plinths (borders for use between floor or ceiling and wall E04F19/04)}
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H02G3/0431 3 {Wall trunking}
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H02G3/0437 3 {Channels}
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H02G3/0443 4 {formed by wire or analogous netting}
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H02G3/045 4 {provided with perforations or slots permitting introduction or exit of wires}
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H02G3/0456 3 {Ladders or other supports}
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H02G3/0462 3 {Tubings, i.e. having a closed section}
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H02G3/0468 4 {Corrugated}
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H02G3/0475 4 {formed by a succession of articulated units}
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H02G3/0481 4 {with a circular cross-section (H02G3/0468, H02G3/0475 take precedence)}
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H02G3/0487 4 {with a non-circular cross-section (H02G3/0468, H02G3/0475 take precedence)}
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H02G3/0493 3 {Service poles}
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H02G3/06 2 Joints for connecting lengths of protective tubing {or channels}, to each other or to casings, e.g. to distribution boxes; Ensuring electrical continuity in the joint
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H02G3/0608 3 {Joints for connecting non cylindrical conduits, e.g. channels}
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H02G3/0616 3 {Joints for connecting tubing to casing}
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H02G3/0625 4 {with means for preventing disengagement of conductors}
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H02G3/0633 5 {with means urging the conductors to follow a non-straight line}
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H02G3/0641 5 {with means distorted around the conductors}
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H02G3/065 5 {with means biting into the conductor-insulation, e.g. teeth-like elements or gripping fingers (H02G3/0675, H02G3/0683 take precedence)}
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H02G3/0658 5 {with means constricting the conductor-insulation (H02G3/065, H02G3/0675, H02G3/0683 take precedence)}
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H02G3/0666 5 {with means clamping the armour of the conductor (H02G3/0675, H02G3/0683 take precedence)}
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H02G3/0675 5 {with bolts operating in a direction parallel to the conductors}
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H02G3/0683 5 {with bolts operating in a direction transverse to the conductors}
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H02G3/0691 4 {Fixing tubing to casing by auxiliary means co-operating with indentations of the tubing, e.g. with tubing-convolutions}
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H02G3/08 2 Distribution boxes; Connection or junction boxes
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H02G3/081 3 {Bases, casings or covers}
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H02G3/083 4 {Inlets}
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H02G3/085 5 {including knock-out or tear-out sections}
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H02G3/086 3 {Assembled boxes}
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H02G3/088 3 {Dustproof, splashproof, drip-proof, waterproof, or flameproof casings or inlets}
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H02G3/10 3 for surface mounting on a wall
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H02G3/105 4 {in association with a plinth, channel, raceway or similar}
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H02G3/12 3 for flush mounting
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H02G3/121 4 {in plain walls}
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H02G3/123 4 {in thin walls}
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H02G3/125 5 {with supporting bar extending between two separate studs of a wall frame}
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H02G3/126 5 {with supporting means for mounting on a single wall stud}
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H02G3/128 4 {in plinths, channels, raceways or similar}
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H02G3/14 3 Fastening of cover or lid to box
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H02G3/16 3 structurally associated with support for line-connecting terminals within the box
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H02G3/18 3 providing line outlets
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H02G3/185 4 {Floor outlets and access cups}
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H02G3/20 4 Ceiling roses {or other lighting sets}
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H02G3/22 1 Installations of cables or lines through walls, floors or ceilings, e.g. into buildings
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H02G3/24 1 {Installation of lines or cables on walls, ceilings or floors by means of insulators (insulators H01B17/00)}
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H02G3/26 1 {Installations of cables, lines, or separate protective tubing therefor directly on or in walls, ceilings, or floors (by means of insulators H02G3/24; supports for pipes, cables or protective tubing F16L3/00; hose-clips F16L33/02)}
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H02G3/263 2 {Installation, e.g. suspension, of conduit channels or other supports}
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H02G3/266 2 {Mounting by adhesive material}
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H02G3/28 1 {Installations of cables, lines, or separate protective tubing therefor in conduits or ducts pre-established in walls, ceilings or floors}
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H02G3/281 2 {in ceilings}
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H02G3/283 2 {in floors}
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H02G3/285 3 {in modular floors, e.g. access floors}
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H02G3/286 2 {in walls}
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H02G3/288 3 {in modular walls, e.g. wall panels}
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H02G3/30 1 Installations of cables or lines on walls, floors or ceilings
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H02G3/305 2 {Mounting by adhesive material}
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H02G3/32 2 using mounting clamps
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H02G3/34 2 using separate protective tubing
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H02G3/36 1 Installations of cables or lines in walls, floors or ceilings
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H02G3/38 2 the cables or lines being installed in preestablished conduits or ducts
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H02G3/381 3 {in ceilings}
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H02G3/383 3 {in floors}
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H02G3/385 4 {in modular floors, e.g. access floors}
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H02G3/386 3 {in walls}
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H02G3/388 4 {in modular walls, e.g. wall panels}
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H02G3/40 3 using separate protective tubing in the conduits or ducts
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H02G5/00 0 Installations of bus-bars
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H02G5/002 1 {Joints between bus-bars for compensating thermal expansion}
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H02G5/005 1 {Laminated bus-bars}
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H02G5/007 1 {Butt joining of bus-bars by means of a common bolt, e.g. splice joint (electrically conductive connections characterised by contacting members H01R4/58)}
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H02G5/02 1 Open installations
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H02G5/025 2 {Supporting structures}
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H02G5/04 1 Partially-enclosed installations, e.g. in ducts and adapted for sliding or rolling current collection
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H02G5/06 1 Totally-enclosed installations, e.g. in metal casings
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H02G5/061 2 {Tubular casings (H02G5/063 takes precedence)}
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H02G5/063 2 {filled with oil or gas}
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H02G5/065 3 {Particle traps (gettering in vacuum switches H01H33/6683; in discharge or vacuum tubes H01J7/18, H01J19/70)}
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H02G5/066 2 {Devices for maintaining distance between conductor and enclosure}
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H02G5/068 3 {being part of the junction between two enclosures}
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H02G5/08 2 Connection boxes therefor
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H02G5/10 1 Cooling
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H02G7/00 0 Overhead installations of electric lines or cables (installations of bus-bars H02G5/00)
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H02G7/02 1 Devices for adjusting or maintaining mechanical tension, e.g. take-up device
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H02G7/04 1 Arrangements or devices for relieving mechanical tension
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H02G7/05 1 Suspension arrangements or devices for electric cables or lines
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H02G7/053 2 {Suspension clamps and clips for electric overhead lines not suspended to a supporting wire}
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H02G7/056 3 {Dead-end clamps}
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H02G7/06 2 Suspensions for lines or cables along a separate supporting wire, e.g. S-hook
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H02G7/08 3 Members clamped to the supporting wire or to the line or cable
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H02G7/10 3 Flexible members or lashings wrapped around both the supporting wire and the line or cable
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H02G7/12 1 Devices for maintaining distance between parallel conductors, e.g. spacer
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H02G7/125 2 {Damping spacers}
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H02G7/14 1 Arrangements or devices for damping mechanical oscillations of lines, e.g. for reducing production of sound {(damping spacers H02G7/125)}
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H02G7/16 1 Devices for removing snow or ice from lines or cables
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H02G7/18 1 Devices affording mechanical protection in the event of breakage of a line or cable, e.g. net for catching broken lines
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H02G7/20 1 Spatial arrangements or dispositions of lines or cables on poles, posts or towers
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H02G7/205 2 {Installation of electric cables, extending along a pole}
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H02G7/22 1 Arrangements of earthing wires suspended between mastheads
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H02G9/00 0 Installations of electric cables or lines in or on the ground or water
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H02G9/02 1 laid directly in or on the ground, river-bed or sea-bottom; Coverings therefor, e.g. tile
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H02G9/025 2 {Coverings therefor, e.g. tile}
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H02G9/04 1 in surface ducts; Ducts or covers therefor
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H02G9/06 1 in underground tubes or conduits; Tubes or conduits therefor
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H02G9/065 2 {Longitudinally split tubes or conduits therefor}
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H02G9/08 1 in tunnels
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H02G9/10 1 in cable chambers, e.g. in manhole or in handhole
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H02G9/12 1 supported on or from floats, e.g. in water
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H02G11/00 0 Arrangements of electric cables or lines between relatively-movable parts
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H02G11/003 1 {using gravity-loaded or spring-loaded loop}
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H02G11/006 1 {using extensible carrier for the cable, e.g. self-coiling spring (extensible conductors or cables H01B7/06)}
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H02G11/02 1 using take-up reel or drum
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H02G13/00 0 Installations of lightning conductors; Fastening thereof to supporting structure
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H02G13/20 1 {Active discharge triggering}
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H02G13/40 1 {Connection to earth}
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H02G13/60 1 {Detecting; Measuring; Sensing; Testing; Simulating}
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H02G13/80 1 {Discharge by conduction or dissipation, e.g. rods, arresters, spark gaps}
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H02G15/00 0 Cable fittings
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H02G15/003 1 {Filling materials, e.g. solid or fluid insulation}
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H02G15/007 1 Devices for relieving mechanical stress
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H02G15/013 1 Sealing means for cable inlets (inlets for cables filled with, or surrounded by, gas or oil H02G15/32)
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H02G15/02 1 Cable terminations (for gas- or oil-filled cables H02G15/22)
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H02G15/025 2 {for coaxial cables or hollow conductors (connections between HF conductors H01P1/04; plug and socket connections per se H01R24/38)}
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H02G15/04 2 Cable-end sealings
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H02G15/043 3 {with end caps, e.g. sleeve closed at one end}
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H02G15/046 4 {with bores or protruding portions allowing passage of cable conductors}
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H02G15/06 2 Cable terminating boxes, frames or other structures
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H02G15/064 3 with devices for relieving electrical stress
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H02G15/068 4 connected to the cable shield only (H02G15/072 takes precedence)
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H02G15/072 4 of the condenser type
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H02G15/076 3 for multi-conductor cables
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H02G15/08 1 Cable junctions (for gas or oil filled cables H02G15/24)
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H02G15/085 2 {for coaxial cables or hollow conductors (plug and socket connections between HF conductors H01P1/04; plug and socket connections per se H01R24/38)}
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H02G15/10 2 protected by boxes, e.g. by distribution, connection or junction boxes
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H02G15/103 3 with devices for relieving electrical stress
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H02G15/105 4 connected to the cable shield only (H02G15/107 takes precedence)
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H02G15/1055 5 {with cross-bonding of cable shields}
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H02G15/107 4 of the condenser type
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H02G15/113 3 Boxes split longitudinally in main cable direction
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H02G15/115 3 Boxes split perpendicularly to main cable direction
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H02G15/117 3 for multiconductor cables
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H02G15/12 3 for incorporating transformers, loading coils or amplifiers
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H02G15/14 4 specially adapted for submarine cables
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H02G15/16 3 structurally associated with support for line-connecting terminals within the box
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H02G15/18 2 protected by sleeves, e.g. for communication cable (two-part covers H02G15/10 {; preforms having internal stresses B29C61/00})
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H02G15/1806 3 {Heat shrinkable sleeves (insulation of electrical connections using a heat shrinking insulating sleeve H01R4/72)}
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H02G15/1813 4 {Wraparound or slotted sleeves}
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H02G15/182 3 {held in expanded condition in radial direction prior to installation}
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H02G15/1826 4 {on a removable hollow core, e.g. a tube}
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H02G15/1833 5 {formed of helically wound strip with adjacent windings, which are removable by applying a pulling force to a strip end}
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H02G15/184 3 with devices for relieving electrical stress
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H02G15/188 4 connected to a cable shield only
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H02G15/192 3 with support means for ends of the sleeves
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H02G15/196 3 having lapped insulation
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H02G15/20 1 Cable fittings for cables filled with or surrounded by gas or oil (H02G15/34 takes precedence)
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H02G15/205 2 {for coaxial cables}
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H02G15/22 2 Cable terminations
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H02G15/23 3 Cable-end sealings
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H02G15/24 2 Cable junctions
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H02G15/25 3 Stop junctions
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H02G15/26 2 Expansion vessels; Locking heads; Auxiliary pipe-lines
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H02G15/28 2 structurally associated with devices for indicating the presence or location of non-electric faults
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H02G15/30 2 with devices for relieving electrical stress
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H02G15/32 2 Cable inlets
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H02G15/34 1 Cable fittings for cryogenic cables {(superconductive cables per se H01B12/00)}
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H02G2200/00 0 Indexing scheme relating to installation of electric cables or lines covered by H02G
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H02G2200/10 1 Prevention of theft of valuable metals
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H02G2200/20 1 Identification of installed cables
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H02G2200/30 1 Tools for installing cables comprising a spirit level
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H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H)
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H02H1/00 0 Details of emergency protective circuit arrangements
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H02H1/0007 1 {concerning the detecting means (in general G01R or other subclasses of G01; reed switches H01H71/2445)}
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H02H1/0015 2 {Using arc detectors}
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H02H1/0023 3 {sensing non electrical parameters, e.g. by optical, pneumatic, thermal or sonic sensors}
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H02H1/003 2 {Fault detection by injection of an auxiliary voltage (same for detection of earth fault currents H02H3/17; for monitoring earth connection H02H5/105)}
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H02H1/0038 1 {concerning the connection of the detecting means, e.g. for reducing their number}
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H02H1/0046 2 {Commutating the detecting means in dependance of the fault, e.g. for reducing their number}
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H02H1/0053 2 {Means for storing the measured quantities during a predetermined time}
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H02H1/0061 1 {concerning transmission of signals (transmission of measured quantities or switching orders; sectionalised protection involving signal transmission between at least two stations H02H7/261; comparison of the voltage or current values at two spaced portions of a single system H02H3/28; transferring the output of a sensing member to another variable G01D5/00; electrical measuring arrangements using modulation of electromagnetic waves, e.g. light beams G01R15/24, G01R15/26)}
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H02H1/0069 2 {by means of light or heat rays}
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H02H1/0076 2 {by superposition on the watched current}
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H02H1/0084 2 {by means of pilot wires or a telephone network; watching of these wires}
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H02H1/0092 1 {concerning the data processing means, e.g. expert systems, neural networks}
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H02H1/04 1 Arrangements for preventing response to transient abnormal conditions, e.g. to lightning {or to short duration over voltage or oscillations; Damping the influence of dc component by short circuits in ac networks}
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H02H1/043 2 {to inrush currents (H02H1/046 takes precedence; differential protection of transformers H02H7/045)}
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H02H1/046 2 {upon detecting saturation of current transformers (for differential protection H02H3/283)}
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H02H1/06 1 Arrangements for supplying operative power {(power supply arrangements in general G05F, H02M)}
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H02H1/063 2 {primary power being supplied by fault current}
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H02H1/066 3 {and comprising a shunt regulator}
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H02H3/00 0 Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection (specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems H02H7/00; systems for change-over to standby supply H02J9/00 ){; integrated protection (for motors H02H7/0822)}
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H02H3/003 1 {responsive to reversal of power transmission direction (reversal of direct current H02H3/18)}
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H02H3/006 1 {Calibration or setting of parameters}
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H02H3/02 1 Details
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H02H3/021 2 {concerning the disconnection itself, e.g. at a particular instant, particularly at zero value of current, disconnection in a predetermined order (disconnection at zero value in general H03K17/18)}
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H02H3/023 3 {by short-circuiting}
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H02H3/025 2 {Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection}
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H02H3/027 2 with automatic disconnection after a predetermined time (H02H3/033, H02H3/06 take precedence {; timing in overcurrent protection circuits H02H3/093; in undervoltage protection circuits H02H3/247; staggered disconnection H02H7/30})
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H02H3/033 2 with several disconnections in a preferential order, {e.g. following priority of the users, load repartition}(H02H3/06 takes precedence)
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H02H3/04 2 with warning or supervision in addition to disconnection, e.g. for indicating that protective apparatus has functioned {(watching of pilot wires H02H1/0084; protection of protective arrangements H02H7/008; indication of the state of electronic switches H03K17/18)}
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H02H3/042 3 {combined with means for locating the fault (locating faults in cables G01R31/08)}
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H02H3/044 3 {Checking correct functioning of protective arrangements, e.g. by simulating a fault (for differential current circuit breakers H02H3/335)}
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H02H3/046 3 {Signalling the blowing of a fuse (detecting non functioning of a lamp H05B47/20)}
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H02H3/048 3 {Checking overvoltage diverters}
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H02H3/05 2 with means for increasing reliability, e.g. redundancy arrangements {(for logic circuits H03K19/003)}
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H02H3/06 2 with automatic reconnection
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H02H3/063 3 {Details concerning the co-operation of many similar arrangements, e.g. in a network (sectionalised protection H02H7/26)}
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H02H3/066 3 {Reconnection being a consequence of eliminating the fault which caused disconnection}
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H02H3/07 3 and with permanent disconnection after a predetermined number of reconnection cycles
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H02H3/08 1 responsive to excess current (responsive to abnormal temperature caused by excess current H02H5/04)
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H02H3/081 2 {and depending on the direction}
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H02H3/083 2 {for three-phase systems}
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H02H3/085 2 {making use of a thermal sensor, e.g. thermistor, heated by the excess current (also responsive to the temperature of the protected device H02H5/041, thermal images H02H6/00)}
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H02H3/087 2 for dc applications
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H02H3/093 2 with timing means {(in general H02H3/027; thermal delay H02H3/085; timing means for undervoltage protection H02H3/247)}
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H02H3/0935 3 {the timing being determined by numerical means}
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H02H3/10 2 additionally responsive to some other abnormal electrical conditions
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H02H3/105 3 {responsive to excess current and fault current to earth}
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H02H3/12 1 responsive to underload or no-load {(for motors H02H7/0827)}
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H02H3/13 2 for multiphase applications, e.g. phase interruption
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H02H3/14 1 responsive to occurrence of voltage on parts normally at earth potential {(monitoring earth connection H02H5/105)}
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H02H3/16 1 responsive to fault current to earth, frame or mass (with balanced or differential arrangement H02H3/26 {; monitoring earth connection H02H5/105})
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H02H3/162 2 {for ac systems}
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H02H3/165 3 {for three-phase systems}
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H02H3/167 2 {combined with other earth-fault protective arrangements}
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H02H3/17 2 by means of an auxiliary voltage injected into the installation to be protected {(using summation current transformers H02H3/33)}
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H02H3/18 1 responsive to reversal of direct current
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H02H3/20 1 responsive to excess voltage
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H02H3/202 2 {for dc systems}
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H02H3/205 2 {using a spark-gap as detector}
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H02H3/207 2 {also responsive to under-voltage (window comparators for indication G01R19/165)}
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H02H3/22 2 of short duration, e.g. lightning
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H02H3/24 1 responsive to undervoltage or no-voltage {(H02H3/207 takes precedence)}
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H02H3/243 2 {for DC systems}
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H02H3/247 2 having timing means
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H02H3/253 2 for multiphase applications, e.g. phase interruption
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H02H3/26 1 responsive to difference between voltages or between currents; responsive to phase angle between voltages or between currents
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H02H3/265 2 {responsive to phase angle between voltages or between currents}
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H02H3/28 2 involving comparison of the voltage or current values at two spaced portions of a single system, e.g. at opposite ends of one line, at input and output of apparatus {(for transformers H02H7/045)}
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H02H3/283 3 {and taking into account saturation of current transformers}
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H02H3/286 3 {involving comparison of similar homopolar quantities}
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H02H3/30 3 using pilot wires or other signalling channel
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H02H3/302 4 {involving phase comparison}
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H02H3/305 4 {involving current comparison}
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H02H3/307 4 {involving comparison of quantities derived from a plurality of phases, e.g. homopolar quantities; using mixing transformers}
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H02H3/32 2 involving comparison of the voltage or current values at corresponding points in different conductors of a single system, e.g. of currents in go and return conductors
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H02H3/325 3 {involving voltage comparison (H02H3/347 takes precedence)}
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H02H3/33 3 using summation current transformers (H02H3/347 takes precedence)
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H02H3/331 4 {responsive to earthing of the neutral conductor (H02H3/338 takes precedence)}
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H02H3/332 4 {with means responsive to dc component in the fault current}
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H02H3/334 4 {with means to produce an artificial unbalance for other protection or monitoring reasons or remote control (H02H3/338 takes precedence)}
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H02H3/335 5 {the main function being self testing of the device}
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H02H3/337 4 {avoiding disconnection due to reactive fault currents}
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H02H3/338 4 {also responsive to wiring error, e.g. loss of neutral, break}
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H02H3/34 3 of a three-phase system
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H02H3/343 4 {using phase sequence analysers}
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H02H3/347 4 using summation current transformers
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H02H3/353 4 involving comparison of phase voltages
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H02H3/36 2 involving comparison of the voltage or current values at corresponding points of different systems, e.g. of parallel feeder systems
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H02H3/365 3 {one of the systems simulating the other system}
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H02H3/38 1 responsive to both voltage and current; responsive to phase angle between voltage and current
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H02H3/382 2 {involving phase comparison between current and voltage or between values derived from current and voltage}
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H02H3/385 2 {using at least one homopolar quantity}
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H02H3/387 2 {using phase-sequence analysing arrangements}
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H02H3/40 1 responsive to ratio of voltage and current
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H02H3/402 2 {using homopolar quantities}
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H02H3/405 2 {using phase sequence analysing arrangements}
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H02H3/407 2 {using induction relays}
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H02H3/42 1 responsive to product of voltage and current
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H02H3/422 2 {using homopolar quantities}
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H02H3/425 2 {using phase sequence analysing arrangements}
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H02H3/427 2 {using induction relays}
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H02H3/44 1 responsive to the rate of change of electrical quantities
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H02H3/445 2 {of DC quantities}
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H02H3/46 1 responsive to frequency deviations
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H02H3/48 1 responsive to loss of synchronism
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H02H3/50 1 responsive to the appearance of abnormal wave forms, e.g. ac in dc installations
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H02H3/52 2 responsive to the appearance of harmonics
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H02H5/00 0 Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection (using simulators of the apparatus being protected H02H6/00; specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems H02H7/00)
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H02H5/005 1 {responsive to ionising radiation; Nuclear-radiation circumvention circuits (radiation detectors G01T; nuclear-explosion detection G21J5/00)}
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H02H5/04 1 responsive to abnormal temperature {(specially adapted for electric machines H02H7/0852)}
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H02H5/041 2 {additionally responsive to excess current (H02H5/048 takes precedence)}
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H02H5/042 2 {using temperature dependent resistors}
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H02H5/043 3 {the temperature dependent resistor being disposed parallel to a heating wire, e.g. in a heating blanket}
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H02H5/044 2 {using a semiconductor device to sense the temperature}
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H02H5/045 2 {using a thermal radiation sensor}
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H02H5/046 2 {using a thermocouple}
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H02H5/047 2 {using a temperature responsive switch}
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H02H5/048 3 {additionally responsive to excess current due to heating of the switch}
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H02H5/06 2 in oil-filled electric apparatus
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H02H5/08 1 responsive to abnormal fluid pressure, liquid level or liquid displacement, e.g. Buchholz relays
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H02H5/083 2 {responsive to the entry or leakage of a liquid into an electrical appliance (moisture alarm G08B21/20)}
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H02H5/086 2 {of cooling or lubricating fluids}
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H02H5/10 1 responsive to mechanical injury, e.g. rupture of line, breakage of earth connection
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H02H5/105 2 {responsive to deterioration or interruption of earth connection (for preventing switching-on H02H11/001)}
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H02H5/12 1 responsive to undesired approach to, or touching of, live parts by living beings
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H02H6/00 0 Emergency protective circuit arrangements responsive to undesired changes from normal non-electric working conditions using simulators of the apparatus being protected, e.g. using thermal images
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H02H6/005 1 {using digital thermal images}
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H02H7/00 0 Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions (structural association of protective devices with specific machines or apparatus and their protection without automatic disconnection, see the relevant subclass for the machine or apparatus)
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H02H7/001 1 {for superconducting apparatus, e.g. coils, lines, machines}
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H02H7/003 1 {for electrostatic apparatus}
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H02H7/005 1 {for remote controlled apparatus; for lines connecting such apparatus}
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H02H7/006 1 {for non-insulated low-voltage distribution systems, e.g. low-voltage halogen-lamp system}
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H02H7/008 1 {for protective arrangements according to this subclass (H02H9/042, H02H9/043 take precedence; protection of spark-gaps H02H7/24)}
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H02H7/04 1 for transformers
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H02H7/042 2 {for current transformers}
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H02H7/045 2 Differential protection of transformers
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H02H7/0455 3 {taking into account saturation of current transformers}
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H02H7/05 2 for capacitive voltage transformers, e.g. against resonant conditions
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H02H7/055 2 for tapped transformers or tap-changing means thereof
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H02H7/06 1 for dynamo-electric generators; for synchronous capacitors
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H02H7/062 2 {for parallel connected generators}
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H02H7/065 2 {against excitation faults}
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H02H7/067 2 {on occurrence of a load dump (control on sudden change of load H02P9/10)}
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H02H7/08 1 for dynamo-electric motors
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H02H7/0805 2 {for synchronous motors}
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H02H7/0811 2 {for dc motors (H02H7/0833 takes precedence)}
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H02H7/0816 2 {concerning the starting sequence, e.g. limiting the number of starts per time unit, monitoring speed during starting}
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H02H7/0822 2 {Integrated protection, motor control centres}
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H02H7/0827 2 {responsive to underload or no-load, e.g. pump-off control circuits for pump motors}
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H02H7/0833 2 {for electric motors with control arrangements}
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H02H7/0838 3 {with H-bridge circuit}
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H02H7/0844 3 {Fail safe control, e.g. by comparing control signal and controlled current, isolating motor on commutation error}
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H02H7/085 2 against excessive load {(H02H6/00 takes precedence)}
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H02H7/0851 3 {for motors actuating a movable member between two end positions, e.g. detecting an end position or obstruction by overload signal}
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H02H7/0852 3 {directly responsive to abnormal temperature by using a temperature sensor (in a control circuit H02H7/0833)}
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H02H7/0853 3 {specially adapted for motors rotating in both directions (H02H7/0851 takes precedence)}
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H02H7/0854 3 {responsive to rate of change of current, couple or speed, e.g. anti-kickback protection (H02H7/0851 takes precedence)}
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H02H7/0855 3 {avoiding response to transient overloads, e.g. during starting}
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H02H7/0856 3 {characterised by the protection measure taken}
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H02H7/0857 4 {by lowering the mechanical load of the motor}
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H02H7/0858 4 {by reversing, cycling or reducing the power supply to the motor}
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H02H7/0859 4 {avoiding restarting after fault condition has disappeared}
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H02H7/09 2 against over-voltage; against reduction of voltage; against phase interruption
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H02H7/093 2 against increase beyond, or decrease below, a predetermined level of rotational speed (centrifugal switches H01H35/10)
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H02H7/097 2 against wrong direction of rotation
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H02H7/10 1 for converters; for rectifiers {(forming part of the control circuit of the converter, see the relevant group in H02M)}
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H02H7/103 2 {for rotating converters}
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H02H7/106 2 {for dynamic converters}
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H02H7/12 2 for static converters or rectifiers {(for discharge lamp power supplies using static converters H05B41/2851, H05B41/2921, H05B41/2981)}
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H02H7/1203 3 {Circuits independent of the type of conversion}
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H02H7/1206 4 {specially adapted to conversion cells composed of a plurality of parallel or serial connected elements}
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H02H7/1209 3 {for converters using only discharge tubes}
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H02H7/1213 3 {for DC-DC converters}
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H02H7/1216 3 {for AC-AC converters}
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H02H7/122 3 for inverters, i.e. dc/ac converters
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H02H7/1222 4 {responsive to abnormalities in the input circuit, e.g. transients in the DC input}
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H02H7/1225 4 {responsive to internal faults, e.g. shoot-through (avoiding shoot-through H02M1/38)}
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H02H7/1227 4 {responsive to abnormalities in the output circuit, e.g. short circuit}
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H02H7/125 3 for rectifiers
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H02H7/1252 4 {responsive to overvoltage in input or output, e.g. by load dump}
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H02H7/1255 4 {responsive to internal faults, e.g. by monitoring ripple in output voltage}
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H02H7/1257 4 {responsive to short circuit or wrong polarity in output circuit}
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H02H7/127 4 having auxiliary control electrode to which blocking control voltages or currents are applied in case of emergency
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H02H7/16 1 for capacitors (for synchronous capacitors H02H7/06)
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H02H7/18 1 for batteries; for accumulators
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H02H7/20 1 for electronic equipment (for converters H02H7/10; for electric measuring instruments G01R1/36; for dc voltage or current semiconductor regulators G05F1/569; for amplifiers H03F1/52; for electronic switching circuits H03K17/08)
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H02H7/205 2 {for controlled semi-conductors which are not included in a specific circuit arrangement}
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H02H7/22 1 for distribution gear, e.g. bus-bar systems; for switching devices {(detecting mechanical or electrical defects in gas-insulated switchgears H02B13/065)}
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H02H7/222 2 {for switches}
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H02H7/224 3 {Anti-pump circuits}
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H02H7/226 2 {for wires or cables, e.g. heating wires}
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H02H7/228 2 {for covered wires or cables}
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H02H7/24 1 for spark-gap arresters
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H02H7/26 1 Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occured (locating faults in cables G01R31/08)
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H02H7/261 2 {involving signal transmission between at least two stations (transmission of signals in general H02H1/0061)}
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H02H7/262 3 {involving transmissions of switching or blocking orders}
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H02H7/263 3 {involving transmissions of measured values (comparison of currents or voltages using pilot wires H02H3/30)}
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H02H7/265 2 {making use of travelling wave theory}
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H02H7/266 2 {involving switching on a spare supply (in general H02J9/00)}
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H02H7/267 2 {for parallel lines and wires}
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H02H7/268 2 {for dc systems}
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H02H7/28 2 for meshed systems
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H02H7/30 2 Staggered disconnection
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H02H9/00 0 Emergency protective circuit arrangements for limiting excess current or voltage without disconnection (structural association of protective devices with specific machines or apparatus, see the relevant subclass for the machine or apparatus)
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H02H9/001 1 {limiting speed of change of electric quantities, e.g. soft switching on or off (progressive control of electronic switches for eliminating interferences H03K17/16)}
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H02H9/002 2 {limiting inrush current on switching on of inductive loads subjected to remanence, e.g. transformers}
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H02H9/004 2 {in connection with live-insertion of plug-in units (involving communication with a central processing unit G06F13/40)}
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H02H9/005 1 {avoiding undesired transient conditions}
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H02H9/007 2 {avoiding or damping oscillations, e.g. fenoresonance or travelling waves}
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H02H9/008 1 {Intrinsically safe circuits}
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H02H9/02 1 responsive to excess current {(current limitation for voltage regulators G05F1/573; disconnection after limiting H02H3/025)}
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H02H9/021 2 {Current limitation using saturable reactors (H02H9/023 takes precedence)}
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H02H9/023 2 {Current limitation using superconducting elements}
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H02H9/025 2 {Current limitation using field effect transistors}
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H02H9/026 2 {Current limitation using PTC resistors, i.e. resistors with a large positive temperature coefficient}
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H02H9/028 2 {Current limitation by detuning a series resonant circuit (H02H9/021, H02H9/023 take precedence)}
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H02H9/04 1 responsive to excess voltage (lightning arrestors H01C7/12, H01C8/04, H01G9/18, H01T)
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H02H9/041 2 {using a short-circuiting device}
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H02H9/042 2 {comprising means to limit the absorbed power or indicate damaged over-voltage protection device}
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H02H9/043 2 {Protection of over-voltage protection device by short-circuiting}
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H02H9/044 2 {Physical layout, materials not provided for elsewhere (varistors H01C7/12; spark-gaps H01T; Ovshinsky devices H10N70/00)}
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H02H9/045 2 {adapted to a particular application and not provided for elsewhere}
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H02H9/046 3 {responsive to excess voltage appearing at terminals of integrated circuits (protection by specific structural integration design H01L27/0248)}
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H02H9/047 3 {Free-wheeling circuits}
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H02H9/048 2 {Anti-latching or quenching devices, i.e. bringing the protection device back to its normal state after a protection action}
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H02H9/049 2 {Circuit arrangements for limiting the number of protection devices}
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H02H9/06 2 using spark-gap arresters
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H02H9/08 1 Limitation or suppression of earth fault currents, e.g. Petersen coil
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H02H11/00 0 Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
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H02H11/001 1 {in case of incorrect or interrupted earth connection (disconnection by breaking of earth connection H02H5/105)}
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H02H11/002 1 {in case of inverted polarity or connection; with switching for obtaining correct connection}
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H02H11/003 2 {using a field effect transistor as protecting element in one of the supply lines}
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H02H11/004 1 {in case of incorrect phase sequence; with switching for obtaining correct phase sequence (protection of motors against wrong direction of rotation H02H7/097)}
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H02H11/005 1 {in case of too low isolation resistance, too high load, short-circuit; earth fault}
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H02H11/006 1 {in case of too high or too low voltage}
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H02H11/007 2 {involving automatic switching for adapting the protected apparatus to the supply voltage}
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H02H11/008 1 {preventing unsafe switching operations in substations (Schaltfehlerschutz)}
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H02H99/00 0 Subject matter not provided for in other groups of this subclass
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H02J CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
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H02J1/00 0 Circuit arrangements for dc mains or dc distribution networks
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H02J1/001 1 {Hot plugging or unplugging of load or power modules to or from power distribution networks}
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H02J1/002 1 {Intermediate AC, e.g. DC supply with intermediated AC distribution}
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H02J1/02 1 Arrangements for reducing harmonics or ripples
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H02J1/04 1 Constant-current supply systems
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H02J1/06 1 Two-wire systems
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H02J1/08 1 Three-wire systems; Systems having more than three wires
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H02J1/082 2 {Plural DC voltage, e.g. DC supply voltage with at least two different DC voltage levels}
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H02J1/084 2 {for selectively connecting the load or loads to one or several among a plurality of power lines or power sources}
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H02J1/086 3 {for providing alternative feeding paths between load or loads and source or sources when the main path fails}
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H02J1/10 1 Parallel operation of dc sources
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H02J1/102 2 {being switching converters (H02J1/108, H02J1/12 take precedence)}
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H02J2001/104 3 {for synchronisation}
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H02J1/106 2 {for load balancing, symmetrisation, or sharing}
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H02J1/108 2 {using diodes blocking reverse current flow (H02J1/12 takes precedence)}
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H02J1/109 2 {Scheduling or re-scheduling the operation of the DC sources in a particular order, e.g. connecting or disconnecting the sources in sequential, alternating or in subsets, to meet a given demand}
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H02J1/12 2 Parallel operation of dc generators with converters, e.g. with mercury-arc rectifier
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H02J1/122 2 {Provisions for temporary connection of DC sources of essentially the same voltage, e.g. jumpstart cables}
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H02J1/14 1 Balancing the load in a network
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H02J1/16 2 using dynamo-electric machines coupled to flywheels
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H02J3/00 0 Circuit arrangements for ac mains or ac distribution networks
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H02J3/001 1 {Methods to deal with contingencies, e.g. abnormalities, faults or failures}
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H02J3/0012 2 {Contingency detection}
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H02J3/00125 2 {Transmission line or load transient problems, e.g. overvoltage, resonance or self-excitation of inductive loads (H02J3/01 takes precedence)}
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H02J3/002 1 {Flicker reduction, e.g. compensation of flicker introduced by non-linear load}
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H02J3/003 1 {Load forecast, e.g. methods or systems for forecasting future load demand}
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H02J3/004 1 {Generation forecast, e.g. methods or systems for forecasting future energy generation}
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H02J3/005 1 {Arrangements for selectively connecting the load to one among a plurality of power lines or power sources (for providing uninterruptable power supply H02J9/00)}
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H02J3/007 1 {Arrangements for selectively connecting the load or loads to one or several among a plurality of power lines or power sources (for providing uninterruptable power supply H02J9/00)}
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H02J3/0073 2 {for providing alternative feeding paths between load and source when the main path fails, e.g. transformers, busbars}
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H02J3/0075 2 {for providing alternative feeding paths between load and source according to economic or energy efficiency considerations, e.g. economic dispatch}
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H02J3/008 1 {involving trading of energy or energy transmission rights}
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H02J3/01 1 Arrangements for reducing harmonics or ripples
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H02J3/02 1 using a single network for simultaneous distribution of power at different frequencies; using a single network for simultaneous distribution of ac power and of dc power
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H02J3/04 1 for connecting networks of the same frequency but supplied from different sources
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H02J3/06 2 Controlling transfer of power between connected networks; Controlling sharing of load between connected networks
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H02J3/08 2 Synchronising of networks
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H02J3/10 1 Constant-current supply systems
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H02J3/12 1 for adjusting voltage in ac networks by changing a characteristic of the network load
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H02J3/14 2 by switching loads on to, or off from, network, e.g. progressively balanced loading
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H02J3/144 3 {Demand-response operation of the power transmission or distribution network}
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H02J3/16 2 by adjustment of reactive power
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H02J3/18 1 Arrangements for adjusting, eliminating or compensating reactive power in networks (for adjustment of voltage H02J3/16)
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H02J3/1807 2 {using series compensators}
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H02J3/1814 3 {wherein al least one reactive element is actively controlled by a bridge converter, e.g. unified power flow controllers [UPFC]}
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H02J3/1821 2 {using shunt compensators (H02J3/1807, H02J3/1878 take precedence)}
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H02J3/1828 3 {with stepwise control, the possibility of switching in or out the entire compensating arrangement not being considered as stepwise control}
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H02J3/1835 3 {with stepless control}
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H02J3/1842 4 {wherein at least one reactive element is actively controlled by a bridge converter, e.g. active filters}
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H02J3/185 5 {wherein such reactive element is purely inductive, e.g. superconductive magnetic energy storage systems [SMES]}
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H02J3/1857 5 {wherein such bridge converter is a multilevel converter}
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H02J3/1864 4 {wherein the stepless control of reactive power is obtained by at least one reactive element connected in series with a semiconductor switch}
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H02J3/1871 3 {Methods for planning installation of shunt reactive power compensators}
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H02J3/1878 2 {using tap changing or phase shifting transformers}
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H02J3/1885 2 {using rotating means, e.g. synchronous generators}
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H02J3/1892 2 {the arrangements being an integral part of the load, e.g. a motor, or of its control circuit}
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H02J3/20 2 in long overhead lines
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H02J3/22 2 in cables
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H02J3/24 1 Arrangements for preventing or reducing oscillations of power in networks (by control effected upon a single generator H02P9/00)
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H02J3/241 2 {The oscillation concerning frequency}
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H02J3/242 2 {using phasor measuring units [PMU] }
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H02J3/26 1 Arrangements for eliminating or reducing asymmetry in polyphase networks
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H02J3/28 1 Arrangements for balancing of the load in a network by storage of energy
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H02J3/30 2 using dynamo-electric machines coupled to flywheels
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H02J3/32 2 using batteries with converting means
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H02J3/322 3 {the battery being on-board an electric or hybrid vehicle, e.g. vehicle to grid arrangements [V2G], power aggregation, use of the battery for network load balancing, coordinated or cooperative battery charging}
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H02J3/34 1 Arrangements for transfer of electric power between networks of substantially different frequency
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H02J3/36 1 Arrangements for transfer of electric power between ac networks via a high-tension dc link
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H02J2003/365 2 {Reducing harmonics or oscillations in HVDC}
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H02J3/38 1 Arrangements for parallely feeding a single network by two or more generators, converters or transformers
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H02J3/381 2 {Dispersed generators}
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H02J3/382 3 {the generators exploiting renewable energy}
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H02J3/383 4 {Solar energy, e.g. photovoltaic energy (generation of electric power by conversion of light H02S)}
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H02J3/385 5 {Maximum power point tracking control for photovoltaic sources}
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H02J3/386 4 {Wind energy (wind motors F03D)}
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H02J3/387 3 {using fuel cells (fuel cells per se H01M8/00)}
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H02J3/388 2 {Islanding, i.e. disconnection of local power supply from the network}
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H02J3/40 2 Synchronising a generator for connection to a network or to another generator
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H02J3/42 3 with automatic parallel connection when synchronisation is achieved
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H02J3/44 3 with means for ensuring correct phase sequence
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H02J3/46 2 Controlling of the sharing of output between the generators, converters, or transformers
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H02J3/466 3 {Scheduling the operation of the generators, e.g. connecting or disconnecting generators to meet a given demand}
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H02J3/472 4 {For selectively connecting the AC sources in a particular order, e.g. sequential, alternating or subsets of sources}
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H02J3/48 3 Controlling the sharing of the in-phase component
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H02J3/50 3 Controlling the sharing of the out-of-phase component
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H02J4/00 0 Circuit arrangements for mains or distribution networks not specified as ac or dc
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H02J5/00 0 Circuit arrangements for transfer of electric power between ac networks and dc networks (H02J3/36 takes precedence)
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H02J5/005 1 {with inductive power transfer (for charging H02J7/025)}
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H02J7/00 0 Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
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H02J7/0003 1 {with provision for charging different types of batteries}
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H02J7/00032 1 {characterised by data exchange}
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H02J7/00034 2 {Charger exchanging data with an electronic device, i.e. telephone, whose internal battery is under charge}
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H02J7/00036 2 {Charger exchanging data with battery}
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H02J7/00038 2 {using passive battery identification means, e.g. resistors or capacitors (identification by mechanical connections H02J7/0045)}
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H02J7/00041 3 {in response to measured battery parameters, e.g. voltage, current or temperature profile}
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H02J7/00043 3 {using switches, contacts or markings, e.g. optical, magnetic or barcode}
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H02J7/00045 2 {Authentication, i.e. circuits for checking compatibility between one component, e.g. a battery or a battery charger, and another component, e.g. a power source}
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H02J7/00047 1 {with provisions for charging different types of batteries}
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H02J7/0013 1 {acting upon several batteries simultaneously or sequentially (H02J7/1423 takes precedence)}
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H02J7/0014 2 {Circuits for equalisation of charge between batteries}
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H02J7/0016 3 {using shunting, discharge or bypass circuits}
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H02J7/0018 3 {using separate charge circuits}
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H02J7/0019 3 {using switched or multiplexed charge circuits}
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H02J7/0021 2 {Monitoring or indicating circuits (H02J7/0026 takes precedence)}
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H02J7/0022 2 {Management of charging with batteries permanently connected to charge circuit (H02J7/0014 takes precedence)}
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H02J7/0024 2 {Parallel/serial switching of connection of batteries to charge or load circuit}
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H02J7/0025 2 {Sequential battery discharge in systems with a plurality of batteries}
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H02J7/0026 2 {using safety or protection circuits, e.g. overcharge/discharge disconnection}
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H02J7/0027 2 {Stations for charging mobile units, e.g. of electric vehicles, of mobile telephones (H02J7/0021, H02J7/0026 take precedence)}
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H02J7/0029 1 {with safety or protection devices or circuits}
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H02J7/00302 2 {Overcharge protection}
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H02J7/00304 2 {Overcurrent protection}
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H02J7/00306 2 {Overdischarge protection}
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H02J7/00308 2 {Overvoltage protection}
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H02J7/00309 2 {Overheat or overtemperature protection}
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H02J7/0031 2 {using battery or load disconnect circuits (H02J9/002 takes precedence)}
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H02J7/0032 3 {disconnection of loads if battery is not under charge, e.g. in vehicle if engine is not running}
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H02J7/0034 2 {using reverse polarity correcting or protecting circuits (mechanical means of polarity protection H02J7/0045)}
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H02J7/0036 2 {using connection detecting circuits (H02J7/0034 takes precedence)}
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H02J7/0042 1 {characterised by the mechanical construction}
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H02J7/0044 2 {specially adapted for holding portable devices containing batteries (H02J7/0045 takes precedence)}
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H02J7/0045 2 {concerning the insertion or the connection of the batteries}
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H02J7/0047 1 {with monitoring or indicating devices or circuits}
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H02J7/0048 2 {Detection of remaining charge capacity or state of charge [SOC]}
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H02J7/0049 3 {Detection of fully charged condition}
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H02J7/005 2 {Detection of state of health [SOH]}
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H02J7/0063 1 {with circuits adapted for supplying loads from the battery}
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H02J2007/0067 2 {Discharge management, i.e. discharge current reduction at low state of charge, sequential battery discharge in systems with a plurality of battery}
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H02J7/0068 1 {Battery or charger load switching, e.g. concurrent charging and load supply (H02J7/0013 takes precedence)}
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H02J7/0069 1 {Charging or discharging for charge maintenance, battery initiation or rejuvenation}
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H02J7/007 1 {Regulation of charging or discharging current or voltage}
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H02J7/0071 2 {with a programmable schedule}
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H02J7/00711 2 {with introduction of pulses during the charging process}
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H02J7/00712 2 {the cycle being controlled or terminated in response to electric parameters}
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H02J7/00714 3 {in response to battery charging or discharging current}
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H02J7/00716 4 {in response to integrated charge or discharge current}
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H02J7/00718 4 {in response to charge current gradient}
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H02J7/007182 3 {in response to battery voltage}
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H02J7/007184 4 {in response to battery voltage gradient}
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H02J7/007186 4 {obtained with the battery disconnected from the charge or discharge circuit}
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H02J7/007188 2 {the charge cycle being controlled or terminated in response to non-electric parameters}
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H02J7/00719 3 {in response to degree of gas development in the battery}
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H02J7/007192 3 {in response to temperature}
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H02J7/007194 4 {of the battery}
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H02J7/0072 2 {using semiconductor devices only}
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H02J7/0077 3 {the charge cycle being terminated in response to electric parameters (H02J7/0093 takes precedence)}
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H02J7/0078 4 {in response to discharge current, e.g. using a coulometer, pilot cell}
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H02J7/008 4 {with the battery connected to the charge circuit}
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H02J7/0085 4 {with the battery disconnected from the charge circuit}
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H02J7/0086 5 {and in response to battery voltage}
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H02J7/0088 3 {the charge cycle being terminated in response to non-electric parameters (H02J7/0093 takes precedence)}
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H02J7/0091 4 {in response to temperature of the battery}
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H02J7/02 1 for charging batteries from ac mains by converters
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H02J7/022 2 {characterised by the type of converter}
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H02J7/025 3 {using non-contact coupling, e.g. inductive, capacitive}
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H02J7/027 2 {with safety or indicating device}
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H02J7/04 2 Regulation of charging current or voltage
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H02J7/042 3 {the charge cycle being controlled in response to a measured parameter}
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H02J7/045 4 {in response to voltage or current}
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H02J7/06 3 using discharge tubes or semiconductor devices
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H02J7/08 4 using discharge tubes only
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H02J7/085 5 {the charge cycle being terminated in response to electric parameters}
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H02J7/087 5 {the charge cycle being terminated in response to non-electric parameters}
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H02J2007/10 4 {using semiconductor devices only}
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H02J7/12 3 using magnetic devices having controllable degree of saturation, i.e. transductors
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H02J7/125 4 {in combination with discharge tubes or semiconductor devices}
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H02J7/14 1 for charging batteries from dynamo-electric generators driven at varying speed, e.g. on vehicle
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H02J7/1407 2 {on vehicles not being driven by a motor, e.g. bicycles}
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H02J7/1415 2 {with a generator driven by a prime mover other than the motor of a vehicle}
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H02J7/1423 2 {with multiple batteries}
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H02J7/143 2 {with multiple generators}
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H02J7/1438 2 {in combination with power supplies for loads other than batteries}
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H02J7/1446 2 {in response to parameters of a vehicle}
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H02J7/1461 2 {with safety or indicationg devices}
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H02J7/1469 2 {Regulation of the charging current or voltage otherwise than by variation of field}
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H02J7/1476 3 {by mechanical action on the generator}
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H02J7/1484 3 {by commutation of the output windings of the generator}
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H02J7/1492 3 {by means of controlling devices between the generator output and the battery}
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H02J7/16 2 Regulation of the charging current or voltage by variation of field
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H02J7/163 3 {with special means for initiating or limiting the excitation current}
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H02J7/166 3 {with safety or indicating devices}
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H02J7/18 3 due to variation of ohmic resistance in field circuit, using resistance switching in or out of circuit step by step
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H02J7/20 3 due to variation of continuously variable ohmic resistor
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H02J7/22 3 due to variation of make-to-break ratio of intermittently-operating contacts, e.g. using Tirrill regulator
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H02J7/225 4 {characterised by the mechanical construction}
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H02J7/24 3 using discharge tubes or semiconductor devices
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H02J7/243 4 {with on/off action}
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H02J7/2434 4 {with pulse modulation}
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H02J7/2437 4 {using thyristors or triacs as final control devices}
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H02J7/26 3 using magnetic devices with controllable degree of saturation
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H02J7/28 3 using magnetic devices with controllable degree of saturation in combination with controlled discharge tube or controlled semiconductor device
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H02J7/30 3 using armature-reaction-excited machines
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H02J7/32 1 for charging batteries from a charging set comprising a non-electric prime mover {rotating at constant speed}
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H02J7/34 1 Parallel operation in networks using both storage and other dc sources, e.g. providing buffering (H02J7/14 takes precedence)
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H02J7/342 2 {The other DC source being a battery actively interacting with the first one, i.e. battery to battery charging (with circuits for polarity protection H02J7/0034)}
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H02J7/345 2 {using capacitors as storage or buffering devices}
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H02J7/35 2 with light sensitive cells
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H02J7/36 1 Arrangements using end-cell switching
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H02J9/00 0 Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
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H02J9/002 1 {in which a reserve is maintained in an energy source by disconnecting non-critical loads, e.g. maintaining a reserve of charge in a vehicle battery for starting an engine}
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H02J9/005 1 {using a power saving mode (for copiers G03G15/5004)}
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H02J9/007 2 {Detection of the absence of a load}
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H02J9/02 1 in which an auxiliary distribution system and its associated lamps are brought into service
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H02J9/04 1 in which the distribution system is disconnected from the normal source and connected to a standby source
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H02J9/06 2 with automatic change-over {, e.g. UPS systems}
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H02J9/061 3 {for DC powered loads}
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H02J9/062 3 {for AC powered loads}
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H02J9/063 4 {Common neutral, e.g. AC input neutral line connected to AC output neutral line and DC middle point}
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H02J9/065 4 {for lighting purposes}
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H02J9/066 3 {characterised by the use of dynamo-electric machines (H02J9/08 takes precedence)}
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H02J9/067 3 {using multi-primary transformers, e.g. transformer having one primary for each AC energy source and a secondary for the loads}
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H02J9/068 3 {Electronic means for switching from one power supply to another power supply, e.g. to avoid parallel connection}
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H02J9/08 3 requiring starting of a prime-mover
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H02J11/00 0 Circuit arrangements for providing service supply to auxiliaries of stations in which electric power is generated, distributed or converted
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H02J13/00 0 Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
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H02J13/00001 1 {characterised by the display of information or by user interaction, e.g. supervisory control and data acquisition systems [SCADA] or graphical user interfaces [GUI]}
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H02J13/00002 1 {characterised by monitoring}
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H02J13/00004 1 {characterised by the power network being locally controlled}
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H02J13/00006 1 {characterised by information or instructions transport means between the monitoring, controlling or managing units and monitored, controlled or operated power network element or electrical equipment}
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H02J13/00007 2 {using the power network as support for the transmission}
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H02J13/00009 3 {using pulsed signals}
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H02J13/0001 3 {using modification of a parameter of the network power signal}
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H02J13/00012 2 {using an auxiliary transmission line}
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H02J13/00014 3 {carrying signals having the network frequency or DC signals}
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H02J13/00016 2 {using a wired telecommunication network or a data transmission bus}
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H02J13/00017 3 {using optical fiber}
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H02J13/00018 3 {using phone lines}
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H02J13/00019 2 {using optical means}
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H02J13/0002 2 {using ultrasonic means}
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H02J13/00022 2 {using wireless data transmission}
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H02J13/00024 3 {by means of mobile telephony}
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H02J13/00026 3 {involving a local wireless network, e.g. Wi-Fi, ZigBee or Bluetooth}
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H02J13/00028 2 {involving the use of Internet protocols}
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H02J13/0003 1 {for DC networks}
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H02J13/00032 1 {Systems characterised by the controlled or operated power network elements or equipment, the power network elements or equipment not otherwise provided for (circuits specially adapted for remote switching of lighting via the power line H05B47/185)}
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H02J13/00034 2 {the elements or equipment being or involving an electric power substation}
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H02J13/00036 2 {the elements or equipment being or involving switches, relays or circuit breakers (circuits for indication of single switches H01H9/167)}
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H02J13/0004 3 {involved in a protection system}
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H02J13/0005 2 {the elements or equipment being or involving power plugs or sockets}
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H02J13/0006 1 {for single frequency AC networks}
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H02J13/0013 2 {characterised by transmission structure between the control or monitoring unit and the controlled or monitored unit}
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H02J13/0017 3 {with direct transmission between the control or monitoring unit and the controlled or monitored unit}
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H02J13/0062 4 {using a data transmission bus}
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H02J13/0075 4 {using radio means}
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H02J13/0079 3 {with transmission using an intermediate treatment level between the control or monitoring unit and the controlled or monitored unit}
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H02J13/0082 4 {using the power network as transmission support}
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H02J13/0086 3 {with transmission using plurality of intermediate treatment level between the control or monitoring unit and the controlled or monitored unit}
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H02J13/0089 4 {using the power network as transmission support}
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H02J13/0093 1 {for AC networks with plurality frequencies}
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H02J13/0096 1 {for networks combining AC and DC power}
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H02J15/00 0 Systems for storing electric energy (mechanical systems therefor F01-F04; in chemical form H01M)
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H02J15/003 1 {in the form of hydraulic energy}
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H02J15/006 1 {in the form of pneumatic energy, e.g. compressed air energy storage [CAES] (accumulators for supplying fluid under pressure F15B1/04)}
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H02J15/007 1 {involving storage in the form of mechanical energy, e.g. fly-wheels}
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H02J15/008 1 {using hydrogen as energy vector}
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H02J50/00 0 Circuit arrangements or systems for wireless supply or distribution of electric power
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H02J50/001 1 {Energy harvesting or scavenging}
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H02J50/005 1 {Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices}
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H02J50/05 1 using capacitive coupling
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H02J50/10 1 using inductive coupling
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H02J50/12 2 of the resonant type
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H02J50/15 1 using ultrasonic waves
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H02J50/20 1 using microwaves or radio frequency waves
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H02J50/23 2 characterised by the type of transmitting antennas, e.g. directional array antennas or Yagi antennas
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H02J50/27 2 characterised by the type of receiving antennas, e.g. rectennas
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H02J50/30 1 using light, e.g. lasers
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H02J50/40 1 using two or more transmitting or receiving devices (H02J50/50 takes precedence)
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H02J50/402 2 {the two or more transmitting or the two or more receiving devices being integrated in the same unit, e.g. power mats with several coils or antennas with several sub-antennas}
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H02J50/50 1 using additional energy repeaters between transmitting devices and receiving devices
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H02J50/502 2 {the energy repeater being integrated together with the emitter or the receiver}
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H02J50/60 1 responsive to the presence of foreign objects, e.g. detection of living beings
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H02J50/70 1 involving the reduction of electric, magnetic or electromagnetic leakage fields
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H02J50/80 1 involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
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H02J50/90 1 involving detection or optimisation of position, e.g. alignment
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H02J2203/00 0 Indexing scheme relating to details of circuit arrangements for AC mains or AC distribution networks
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H02J2203/10 1 Power transmission or distribution systems management focussing at grid-level, e.g. load flow analysis, node profile computation, meshed network optimisation, active network management or spinning reserve management
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H02J2203/20 1 Simulating, e g planning, reliability check, modelling or computer assisted design [CAD]
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H02J2207/00 0 Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
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H02J2207/10 1 Control circuit supply, e.g. means for supplying power to the control circuit
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H02J2207/20 1 Charging or discharging characterised by the power electronics converter
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H02J2207/30 1 Charge provided using DC bus or data bus of a computer
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H02J2207/40 1 adapted for charging from various sources, e.g. AC, DC or multivoltage
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H02J2207/50 1 Charging of capacitors, supercapacitors, ultra-capacitors or double layer capacitors (using capacitors as storage or buffering device in cooperation with batteries H02J7/345)
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H02J2213/00 0 Indexing scheme relating to details of circuit arrangements for providing remote indication of network conditions of for circuit arrangements for providing remote control of switching means in a power distribution network
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H02J2213/10 1 using simultaneously two or more different transmission means
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H02J2300/00 0 Systems for supplying or distributing electric power characterised by decentralized, dispersed, or local generation
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H02J2300/10 1 The dispersed energy generation being of fossil origin, e.g. diesel generators
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H02J2300/20 1 The dispersed energy generation being of renewable origin
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H02J2300/22 2 The renewable source being solar energy
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H02J2300/24 3 of photovoltaic origin
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H02J2300/26 4 involving maximum power point tracking control for photovoltaic sources (maximum power point systems in particular G05F1/67)
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H02J2300/28 2 The renewable source being wind energy (wind motors F03D)
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H02J2300/30 1 The power source being a fuel cell
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H02J2300/40 1 wherein a plurality of decentralised, dispersed or local energy generation technologies are operated simultaneously
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H02J2310/00 0 The network for supplying or distributing electric power characterised by its spatial reach or by the load
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H02J2310/10 1 The network having a local or delimited stationary reach
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H02J2310/12 2 The local stationary network supplying a household or a building
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H02J2310/14 3 The load or loads being home appliances
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H02J2310/16 3 The load or loads being an Information and Communication Technology [ICT] facility
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H02J2310/18 2 The network being internal to a power source or plant
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H02J2310/20 2 The network being internal to a load
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H02J2310/22 3 The load being a portable electronic device
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H02J2310/23 3 The load being a medical device, a medical implant, or a life supporting device
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H02J2310/40 1 The network being an on-board power network, i.e. within a vehicle
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H02J2310/42 2 for ships or vessels
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H02J2310/44 2 for aircrafts
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H02J2310/46 2 for ICE-powered road vehicles
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H02J2310/48 2 for electric vehicles [EV] or hybrid vehicles [HEV]
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H02J2310/50 1 for selectively controlling the operation of the loads
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H02J2310/52 2 The controlling of the operation of the load not being the total disconnection of the load, i.e. entering a degraded mode or in current limitation
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H02J2310/54 2 according to a pre-established time schedule
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H02J2310/56 2 characterised by the condition upon which the selective controlling is based
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H02J2310/58 3 The condition being electrical
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H02J2310/60 4 Limiting power consumption in the network or in one section of the network, e.g. load shedding or peak shaving
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H02J2310/62 3 The condition being non-electrical, e.g. temperature
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H02J2310/64 4 The condition being economic, e.g. tariff based load management
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H02J2310/66 2 one of the loads acting as master and the other or others acting as slaves
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H02J2310/70 1 Load identification
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H02K DYNAMO-ELECTRIC MACHINES (dynamo-electric relays H01H53/00; conversion of DC or AC input power into surge output power {H03K3/53})
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H02K1/00 0 Details of the magnetic circuit (magnetic circuits for relays H01H50/16)
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H02K1/02 1 characterised by the magnetic material
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H02K1/04 1 characterised by the material used for insulating the magnetic circuit or parts thereof
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H02K1/06 1 characterised by the shape, form or construction
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H02K1/08 2 Salient poles
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H02K1/10 3 Commutating poles
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H02K1/12 2 Stationary parts of the magnetic circuit
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H02K1/14 3 Stator cores with salient poles
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H02K1/141 4 {consisting of C-shaped cores}
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H02K1/143 5 {of the horse-shoe type}
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H02K1/145 4 {having an annular coil, e.g. of the claw-pole type}
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H02K1/146 4 {consisting of a generally annular yoke with salient poles}
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H02K1/148 5 {Sectional cores (H02K1/141 takes precedence)}
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H02K1/16 3 Stator cores with slots for windings
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H02K1/165 4 {Shape, form or location of the slots}
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H02K1/17 3 Stator cores with permanent magnets
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H02K1/18 3 Means for mounting or fastening magnetic stationary parts on to, or to, the stator structures
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H02K1/182 4 {to stators axially facing the rotor, i.e. with axial or conical air gap}
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H02K1/185 4 {to outer stators}
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H02K1/187 4 {to inner stators}
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H02K1/20 3 with channels or ducts for flow of cooling medium
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H02K1/22 2 Rotating parts of the magnetic circuit
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H02K1/223 3 {Rotor cores with windings and permanent magnets (for additional excitation in synchronous motors or generators H02K21/042; in synchronous motors having additional short-circuited winding for starting as an asynchronous motor H02K21/46)}
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H02K1/24 3 Rotor cores with salient poles {; Variable reluctance rotors}
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H02K1/243 4 {of the claw-pole type}
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H02K1/246 4 {Variable reluctance rotors}
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H02K1/26 3 Rotor cores with slots for windings
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H02K1/265 4 {Shape, form or location of the slots}
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H02K1/27 3 Rotor cores with permanent magnets
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H02K1/2706 4 Inner rotors
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H02K1/2713 5 the magnetisation axis of the magnets being axial, e.g. claw-pole type
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H02K1/272 5 the magnetisation axis of the magnets being perpendicular to the rotor axis
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H02K1/2726 6 the rotor consisting of a single magnet or two or more axially juxtaposed single magnets
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H02K1/2733 7 Annular magnets
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H02K1/274 6 the rotor consisting of two or more circumferentially positioned magnets
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H02K1/2746 7 the rotor consisting of magnets arranged with the same polarity, e.g. consequent pole type
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H02K1/2753 7 the rotor consisting of magnets or groups of magnets arranged with alternating polarity
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H02K1/276 8 Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]
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H02K1/2766 9 {having a flux concentration effect}
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H02K1/2773 10 {consisting of tangentially magnetized radial magnets}
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H02K1/278 8 Surface mounted magnets; Inset magnets
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H02K1/2781 9 Magnets shaped to vary the mechanical air gap between the magnets and the stator
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H02K1/2783 9 with magnets arranged in Halbach arrays
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H02K1/2786 4 Outer rotors
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H02K1/2787 5 the magnetisation axis of the magnets being perpendicular to the rotor axis
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H02K1/2788 6 the rotor consisting of a single magnet or two or more axially juxtaposed single magnets
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H02K1/2789 6 the rotor consisting of two or more circumferentially positioned magnets
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H02K1/279 7 Magnets embedded in the magnetic core
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H02K1/2791 7 Surface mounted magnets; Inset magnets
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H02K1/27915 8 Magnets shaped to vary the mechanical air gap between the magnets and the stator
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H02K1/2792 8 with magnets arranged in Halbach arrays
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H02K1/2793 4 Rotors axially facing stators
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H02K1/2795 5 the rotor consisting of two or more circumferentially positioned magnets
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H02K1/2796 6 where both axial sides of the rotor face a stator
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H02K1/2798 6 where both axial sides of the stator face a rotor
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H02K1/28 3 Means for mounting or fastening rotating magnetic parts on to, or to, the rotor structures
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H02K1/30 4 using intermediate parts, e.g. spiders
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H02K1/32 3 with channels or ducts for flow of cooling medium
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H02K1/325 4 {between salient poles}
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H02K1/34 2 Reciprocating, oscillating or vibrating parts of the magnetic circuit
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H02K3/00 0 Details of windings
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H02K3/02 1 Windings characterised by the conductor material
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H02K3/04 1 Windings characterised by the conductor shape, form or construction, e.g. with bar conductors
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H02K3/12 2 arranged in slots
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H02K3/14 3 with transposed conductors, e.g. twisted conductors
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H02K3/16 3 for auxiliary purposes, e.g. damping or commutating
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H02K3/18 2 Windings for salient poles
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H02K3/20 3 for auxiliary purposes, e.g. damping or commutating
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H02K3/22 2 consisting of hollow conductors
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H02K3/24 2 with channels or ducts for cooling medium between the conductors
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H02K3/26 2 consisting of printed conductors
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H02K3/28 2 Layout of windings or of connections between windings (windings for pole-changing H02K17/06, H02K17/14, H02K19/12, H02K19/32)
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H02K3/30 1 Windings characterised by the insulating material
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H02K3/32 1 Windings characterised by the shape, form or construction of the insulation
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H02K3/325 2 {for windings on salient poles, such as claw-shaped poles}
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H02K3/34 2 between conductors or between conductor and core, e.g. slot insulation
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H02K3/345 3 {between conductor and core, e.g. slot insulation}
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H02K3/38 2 around winding heads, equalising connectors, or connections thereto
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H02K3/40 2 for high voltage, e.g. affording protection against corona discharges
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H02K3/42 1 Means for preventing or reducing eddy-current losses in the winding heads, e.g. by shielding
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H02K3/44 1 Protection against moisture or chemical attack; Windings specially adapted for operation in liquid or gas
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H02K3/46 1 Fastening of windings on the stator or rotor structure
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H02K3/47 2 Air-gap windings, i.e. iron-free windings
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H02K3/48 2 in slots
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H02K3/487 3 Slot-closing devices
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H02K3/493 4 magnetic
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H02K3/50 2 Fastening of winding heads, equalising connectors, or connections thereto
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H02K3/505 3 {for large machine windings, e.g. bar windings (H02K3/51 takes precedence)}
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H02K3/51 3 applicable to rotors only
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H02K3/52 2 Fastening salient pole windings or connections thereto
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H02K3/521 3 {applicable to stators only}
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H02K3/522 4 {for generally annular cores with salient poles}
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H02K3/524 4 {for U-shaped, E-shaped or similarly shaped cores}
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H02K3/525 4 {Annular coils, e.g. for cores of the claw-pole type}
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H02K3/527 3 {applicable to rotors only}
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H02K3/528 4 {of the claw-pole type}
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H02K5/00 0 Casings; Enclosures; Supports
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H02K5/02 1 Casings or enclosures characterised by the material thereof
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H02K5/04 1 Casings or enclosures characterised by the shape, form or construction thereof
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H02K5/06 2 Cast metal casings
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H02K5/08 2 Insulating casings
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H02K5/10 2 with arrangements for protection from ingress, e.g. water or fingers
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H02K5/12 2 specially adapted for operating in liquid or gas (combined with cooling arrangements H02K9/00)
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H02K5/124 3 Sealing of shafts
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H02K5/128 3 using air-gap sleeves or air-gap discs
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H02K5/1282 4 {the partition wall in the air-gap being non cylindrical}
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H02K5/1285 4 {of the submersible type}
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H02K5/132 3 Submersible electric motors (H02K5/128 takes precedence)
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H02K5/136 3 explosion-proof
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H02K5/14 2 Means for supporting or protecting brushes or brush holders
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H02K5/141 3 {for cooperation with slip-rings}
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H02K5/143 3 {for cooperation with commutators}
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H02K5/145 4 {Fixedly supported brushes or brush holders, e.g. leaf or leaf-mounted brushes}
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H02K5/146 4 {Pivotally supported brushes or brush holders}
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H02K5/148 4 {Slidably supported brushes}
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H02K5/15 2 Mounting arrangements for bearing-shields or end plates
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H02K5/16 2 Means for supporting bearings, e.g. insulating supports or means for fitting bearings in the bearing-shields (magnetic bearings H02K7/09)
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H02K5/161 3 {radially supporting the rotary shaft at both ends of the rotor (H02K5/165, H02K5/167, H02K5/173 take precedence)}
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H02K5/163 3 {radially supporting the rotary shaft at only one end of the rotor (H02K5/165, H02K5/167, H02K5/173 take precedence)}
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H02K5/165 3 {radially supporting the rotor around a fixed spindle; radially supporting the rotor directly (H02K5/167, H02K5/173 take precedence)}
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H02K5/167 3 using sliding-contact or spherical cap bearings
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H02K5/1672 4 {radially supporting the rotary shaft at both ends of the rotor (H02K5/1677 takes precedence)}
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H02K5/1675 4 {radially supporting the rotary shaft at only one end of the rotor (H02K5/1677 takes precedence)}
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H02K5/1677 4 {radially supporting the rotor around a fixed spindle; radially supporting the rotor directly}
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H02K5/173 3 using bearings with rolling contact, e.g. ball bearings
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H02K5/1732 4 {radially supporting the rotary shaft at both ends of the rotor (H02K5/1737 takes precedence)}
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H02K5/1735 4 {radially supporting the rotary shaft at only one end of the rotor (H02K5/1737 takes precedence)}
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H02K5/1737 4 {radially supporting the rotor around a fixed spindle; radially supporting the rotor directly}
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H02K5/18 2 with ribs or fins for improving heat transfer
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H02K5/20 2 with channels or ducts for flow of cooling medium
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H02K5/203 3 {specially adapted for liquids, e.g. cooling jackets}
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H02K5/207 3 {with openings in the casing specially adapted for ambient air}
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H02K5/22 2 Auxiliary parts of casings not covered by groups H02K5/06-H02K5/20, e.g. shaped to form connection boxes or terminal boxes
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H02K5/225 3 {Terminal boxes or connection arrangements (specially adapted for submersible motors H02K5/132)}
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H02K5/24 1 specially adapted for suppression or reduction of noise or vibrations
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H02K5/26 1 Means for adjusting casings relative to their supports
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H02K7/00 0 Arrangements for handling mechanical energy structurally associated with dynamo-electric machines, e.g. structural association with mechanical driving motors or auxiliary dynamo-electric machines
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H02K7/003 1 {Couplings; Details of shafts (means for mounting rotors on shafts H02K1/28)}
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H02K7/006 1 {Structural association of a motor or generator with the drive train of a motor vehicle}
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H02K7/02 1 Additional mass for increasing inertia, e.g. flywheels
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H02K7/025 2 {for power storage}
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H02K7/04 1 Balancing means
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H02K7/06 1 Means for converting reciprocating motion into rotary motion or vice versa
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H02K7/061 2 {using rotary unbalanced masses (for generating mechanical vibrations in general B06B1/16)}
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H02K7/063 3 {integrally combined with motor parts, e.g. motors with eccentric rotors}
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H02K7/065 2 Electromechanical oscillators; Vibrating magnetic drives
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H02K7/07 2 using pawls and ratchet wheels
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H02K7/075 2 using crankshafts or eccentrics
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H02K7/08 1 Structural association with bearings
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H02K7/081 2 {specially adapted for worm gear drives (H02K7/09 takes precedence)}
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H02K7/083 2 {radially supporting the rotary shaft at both ends of the rotor (H02K7/086, H02K7/09 take precedence)}
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H02K7/085 2 {radially supporting the rotary shaft at only one end of the rotor (H02K7/086, H02K7/09 take precedence)}
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H02K7/086 2 {radially supporting the rotor around a fixed spindle; radially supporting the rotor directly (H02K7/09 takes precedence)}
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H02K7/088 3 {radially supporting the rotor directly}
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H02K7/09 2 with magnetic bearings
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H02K7/10 1 Structural association with clutches, brakes, gears, pulleys or mechanical starters
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H02K7/1004 2 {with pulleys}
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H02K7/1008 3 {structurally associated with the machine rotor (H02K7/1012 takes precedence)}
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H02K7/1012 3 {Machine arranged inside the pulley}
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H02K7/1016 4 {Machine of the outer rotor type}
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H02K7/102 2 with friction brakes
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H02K7/1021 3 {Magnetically influenced friction brakes}
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H02K7/1023 4 {using electromagnets}
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H02K7/1025 5 {using axial electromagnets with generally annular air gap}
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H02K7/1026 4 {using stray fields}
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H02K7/1028 5 {axially attracting the brake armature in the frontal area of the magnetic core}
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H02K7/104 2 with eddy-current brakes
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H02K7/106 2 with dynamo-electric brakes
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H02K7/108 2 with friction clutches
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H02K7/1085 3 {Magnetically influenced friction clutches}
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H02K7/11 2 with dynamo-electric clutches
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H02K7/112 2 with friction clutches in combination with brakes
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H02K7/1125 3 {Magnetically influenced friction clutches and brakes}
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H02K7/114 2 with dynamo-electric clutches in combination with brakes
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H02K7/116 2 with gears
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H02K7/1163 3 {where at least two gears have non-parallel axes without having orbital motion}
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H02K7/1166 4 {comprising worm and worm-wheel (structural association with bearings specially adapted for worm gear drives H02K7/081)}
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H02K7/118 2 with starting devices
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H02K7/1185 3 {with a mechanical one-way direction control, i.e. with means for reversing the direction of rotation of the rotor}
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H02K7/12 2 with auxiliary limited movement of stators, rotors or core parts, e.g. rotors axially movable for the purpose of clutching or braking
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H02K7/125 3 {magnetically influenced}
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H02K7/14 1 Structural association with mechanical loads, e.g. with hand-held machine tools or fans (with fan or impeller for cooling the machine H02K9/06)
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H02K7/145 2 {Hand-held machine tool}
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H02K7/16 2 for operation above the critical speed of vibration of the rotating parts
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H02K7/18 1 Structural association of electric generators with mechanical driving motors, e.g. with turbines
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H02K7/1807 2 {Rotary generators (H02K7/006 takes precedence)}
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H02K7/1815 3 {structurally associated with reciprocating piston engines (general aspects of generating sets, e.g. housing, F02B63/04)}
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H02K7/1823 3 {structurally associated with turbines or similar engines}
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H02K7/183 4 {wherein the turbine is a wind turbine (adaptation of a wind turbine to an electric generator F03D9/25)}
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H02K7/1838 5 {Generators mounted in a nacelle or similar structure of a horizontal axis wind turbine}
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H02K7/1846 3 {structurally associated with wheels or associated parts (dynamos arranged in the wheel hub of cycles B62J6/12)}
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H02K7/1853 3 {driven by intermittent forces}
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H02K7/1861 3 {driven by animals or vehicles (H02K7/1853 takes precedence)}
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H02K7/1869 2 {Linear generators; sectional generators}
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H02K7/1876 3 {with reciprocating, linearly oscillating or vibrating parts}
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H02K7/1884 4 {structurally associated with free piston engines}
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H02K7/1892 2 {Generators with parts oscillating or vibrating about an axis}
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H02K7/20 1 Structural association with auxiliary dynamo-electric machines, e.g. with electric starter motors or exciters
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H02K9/00 0 Arrangements for cooling or ventilating (channels or ducts in parts of the magnetic circuit H02K1/20, H02K1/32; channels or ducts in or between conductors H02K3/22, H02K3/24)
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H02K9/02 1 by ambient air flowing through the machine
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H02K9/04 2 having means for generating a flow of cooling medium
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H02K9/06 3 with fans or impellers driven by the machine shaft
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H02K9/08 1 by gaseous cooling medium circulating wholly within the machine casing (H02K9/10 takes precedence)
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H02K9/10 1 by gaseous cooling medium flowing in closed circuit, a part of which is external to the machine casing
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H02K9/12 2 wherein the cooling medium circulates freely within the casing
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H02K9/14 1 wherein gaseous cooling medium circulates between the machine casing and a surrounding mantle
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H02K9/16 2 wherein the cooling medium circulates through ducts or tubes within the casing
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H02K9/18 2 wherein the external part of the closed circuit comprises a heat exchanger structurally associated with the machine casing
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H02K9/19 1 for machines with closed casing and closed-circuit cooling using a liquid cooling medium, e.g. oil
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H02K9/193 2 with provision for replenishing the cooling medium; with means for preventing leakage of the cooling medium
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H02K9/197 2 in which the rotor or stator space is fluid-tight, e.g. to provide for different cooling media for rotor and stator
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H02K9/20 2 wherein the cooling medium vaporises within the machine casing
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H02K9/22 1 by solid heat conducting material embedded in, or arranged in contact with, the stator or rotor, e.g. heat bridges
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H02K9/223 2 {Heat bridges}
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H02K9/225 2 {Heat pipes}
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H02K9/227 2 {Heat sinks}
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H02K9/24 1 Protection against failure of cooling arrangements, e.g. due to loss of cooling medium or due to interruption of the circulation of cooling medium
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H02K9/26 1 Structural association of machines with devices for cleaning or drying cooling medium, e.g. with filters
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H02K9/28 1 Cooling of commutators, slip-rings or brushes e.g. by ventilating
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H02K11/00 0 Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection (casings, enclosures or supports H02K5/00)
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H02K11/0094 1 {Structural association with other electrical or electronic devices}
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H02K11/01 1 for shielding from electromagnetic fields {, i.e. structural association with shields} (means for preventing or reducing eddy-current losses in the winding heads by shielding H02K3/42)
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H02K11/012 2 {Shields associated with rotating parts, e.g. rotor cores or rotary shafts}
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H02K11/014 2 {Shields associated with stationary parts, e.g. stator cores}
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H02K11/0141 3 {Shields associated with casings, enclosures or brackets}
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H02K11/02 1 for suppression of electromagnetic interference
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H02K11/026 2 Suppressors associated with brushes, brush holders or their supports
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H02K11/028 2 Suppressors associated with the rotor
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H02K11/04 1 for rectification
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H02K11/042 2 Rectifiers associated with rotating parts, e.g. rotor cores or rotary shafts
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H02K11/044 2 {in motors (H02K11/042 takes precedence)}
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H02K11/046 2 {in generators (H02K11/042 takes precedence)}
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H02K11/048 3 {Rectifiers combined with drive circuits in starter-generators}
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H02K11/049 2 Rectifiers associated with stationary parts, e.g. stator cores
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H02K11/05 3 Rectifiers associated with casings, enclosures or brackets
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H02K11/20 1 for measuring, monitoring, testing, protecting or switching (rectifiers H02K11/04; power electronics H02K11/33)
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H02K11/21 2 Devices for sensing speed or position, or actuated thereby (specially adapted for machines having non-mechanical commutating devices H02K29/06, H02K29/14)
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H02K11/215 3 Magnetic effect devices, e.g. Hall-effect or magneto-resistive elements
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H02K11/22 3 Optical devices
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H02K11/225 3 Detecting coils
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H02K11/23 3 Mechanically-actuated centrifugal switches
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H02K11/24 2 Devices for sensing torque, or actuated thereby (H02K11/27 takes precedence)
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H02K11/25 2 Devices for sensing temperature, or actuated thereby
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H02K11/26 2 Devices for sensing voltage, or actuated thereby, e.g. overvoltage protection devices
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H02K11/27 2 Devices for sensing current, or actuated thereby (overcurrent protection responsive to temperature of the machines or parts thereof, e.g. windings, H02K11/25)
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H02K11/28 2 Manual switches
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H02K11/30 1 Structural association with control circuits or drive circuits
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H02K11/33 2 Drive circuits, e.g. power electronics (H02K11/38 takes precedence)
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H02K11/35 2 Devices for recording or transmitting machine parameters, e.g. memory chips or radio transmitters for diagnosis
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H02K11/38 2 Control circuits or drive circuits associated with geared commutator motors of the worm-and-wheel type
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H02K11/40 1 Structural association with grounding devices
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H02K13/00 0 Structural associations of current collectors with motors or generators, e.g. brush mounting plates or connections to windings (supporting or protecting brushes or brush holders in motor casings or enclosures H02K5/14); Disposition of current collectors in motors or generators; Arrangements for improving commutation
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H02K13/003 1 {Structural associations of slip-rings}
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H02K13/006 1 {Structural associations of commutators}
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H02K13/02 1 Connections between slip-rings and windings
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H02K13/04 1 Connections between commutator segments and windings
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H02K13/06 2 Resistive connections, e.g. by high-resistance chokes or by transistors
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H02K13/08 2 Segments formed by extensions of the winding
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H02K13/10 1 Arrangements of brushes or commutators specially adapted for improving commutation
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H02K13/105 2 {Spark suppressors associated with the commutator}
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H02K13/12 1 Arrangements for producing an axial reciprocation of the rotor and its associated current collector part, e.g. for polishing commutator surfaces
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H02K13/14 1 Circuit arrangements for improvement of commutation, e.g. by use of unidirectionally conductive elements
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H02K15/00 0 Methods or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines
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H02K15/0006 1 {Disassembling, repairing or modifying dynamo-electric machines (repairing of cooling fluid boxes H02K15/0093)}
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H02K15/0012 1 {Manufacturing cage rotors}
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H02K15/0018 1 {Applying slot closure means in the core; Manufacture of slot closure means}
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H02K15/0025 1 {Shaping or compacting conductors or winding heads after the installation of the winding in the core or machine (methods or apparatus for simultaneously twisting a plurality of hairpins prior to mounting H02K15/0428); Applying fastening means on winding heads}
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H02K15/0031 2 {Shaping or compacting conductors in slots or around salient poles (H02K15/005 takes precedence)}
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H02K15/0037 2 {Shaping or compacting winding heads (H02K15/005, H02K15/0087 and H02K15/0428 take precedence)}
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H02K15/0043 3 {Applying fastening means on winding headS (fastening by applying resin, glue, varnish and similar means H02K15/12)}
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H02K15/005 2 {by means of electrodynamic forces}
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H02K15/0056 1 {Manufacturing winding connections}
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H02K15/0062 2 {Manufacturing the terminal arrangement per se; Connecting the terminals to an external circuit}
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H02K15/0068 2 {Connecting winding sections; Forming leads; Connecting leads to terminals}
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H02K15/0081 3 {for form-wound windings}
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H02K15/0087 4 {characterised by the method or apparatus for simultaneously twisting a plurality of hairpins open ends after insertion into the machine (for simultaneously twisting a plurality of hairpins prior to mounting into the machine H02K15/0428)}
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H02K15/0093 4 {Manufacturing or repairing cooling fluid boxes, i.e. terminals of fluid cooled windings ensuring both electrical and fluid connection}
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H02K15/02 1 of stator or rotor bodies
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H02K15/022 2 {with salient poles or claw-shaped poles}
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H02K15/024 2 {with slots}
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H02K15/026 3 {Wound cores}
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H02K15/028 3 {for fastening to casing or support, respectively to shaft or hub}
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H02K15/03 2 having permanent magnets
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H02K15/04 1 of windings, prior to mounting into machines (insulating windings H02K15/10, H02K15/12)
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H02K15/0407 2 {Windings manufactured by etching, printing or stamping the complete coil}
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H02K15/0414 2 {Windings consisting of separate elements, e.g. bars, hairpins, segments, half coils}
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H02K15/0421 3 {consisting of single conductors, e.g. hairpins}
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H02K15/0428 4 {characterised by the method or apparatus for simultaneously twisting a plurality of hairpins (for simultaneously twisting a plurality of hairpins open ends after insertion into the machine H02K15/0087)}
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H02K15/0435 2 {Wound windings}
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H02K15/0442 3 {Loop windings (manufacturing of windings consisting of overlapped loops H02K15/0464)}
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H02K15/045 4 {Form wound coils}
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H02K15/0464 3 {Lap windings (when on diagonally wound hollow coils H02K15/0492)}
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H02K15/0471 4 {manufactured by flattening a spiral winding}
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H02K15/0478 3 {Wave windings, undulated windings (when on diagonally wound hollow coils H02K15/0492)}
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H02K15/0485 4 {manufactured by shaping an annular winding}
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H02K15/0492 3 {Diagonally wound hollow coils}
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H02K15/06 1 Embedding prefabricated windings in machines
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H02K15/061 2 {Air-gap windings}
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H02K15/062 2 {Windings in slots; salient pole windings}
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H02K15/063 3 {Windings for large electric machines, e.g. bar windings (windings consisting of cables H02K15/065)}
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H02K15/064 3 {Windings consisting of separate segments, e.g. hairpin windings (H02K15/063 takes precedence)}
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H02K15/065 3 {Windings consisting of complete sections, e.g. coils, waves (windings for large electric machines other than those consisting of cables H02K15/063)}
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H02K15/066 4 {inserted perpendicularly to the axis of the slots or inter-polar channels}
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H02K15/067 4 {inserted in parallel to the axis of the slots or inter-polar channels}
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H02K15/068 5 {Strippers}
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H02K15/08 1 Forming windings by laying conductors into or around core parts
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H02K15/085 2 by laying conductors into slotted stators
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H02K15/09 2 by laying conductors into slotted rotors
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H02K15/095 2 by laying conductors around salient poles
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H02K15/10 1 Applying solid insulation to windings, stators or rotors
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H02K15/105 2 {to the windings}
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H02K15/12 1 Impregnating, heating or drying of windings, stators, rotors or machines
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H02K15/125 2 {Heating or drying of machines in operational state, e.g. standstill heating}
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H02K15/14 1 Casings; Enclosures; Supports
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H02K15/16 1 Centering rotors within the stator; Balancing rotors
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H02K15/165 2 {Balancing the rotor}
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H02K16/00 0 Machines with more than one rotor or stator {(machines for transmitting mechanical power from a driving shaft to a driven shaft and comprising structurally interrelated motor and generator parts H02K51/00; permanent magnet machines with multiple rotors or stators relatively rotated for vectorially combining the excitation fields or the armature voltages H02K21/029)}
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H02K16/005 1 {Machines with only rotors, e.g. counter-rotating rotors (DC commutator machines or universal AC/DC commutator motors having a rotating armature and a rotating excitation field H02K23/60)}
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H02K16/02 1 Machines with one stator and two {or more} rotors
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H02K16/025 2 {with rotors and moving stators connected in a cascade (cascade arrangement of an asynchronous motor with another dynamo-electric motor or converter H02K17/34)}
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H02K16/04 1 Machines with one rotor and two stators
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H02K17/00 0 Asynchronous induction motors; Asynchronous induction generators
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H02K17/02 1 Asynchronous induction motors
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H02K17/04 2 for single phase current
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H02K17/06 3 having windings arranged for permitting pole-changing
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H02K17/08 3 Motors with auxiliary phase obtained by externally fed auxiliary windings, e.g. capacitor motors
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H02K17/10 3 Motors with auxiliary phase obtained by split-pole carrying short-circuited windings
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H02K17/12 2 for multi-phase current
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H02K17/14 3 having windings arranged for permitting pole-changing
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H02K17/16 2 having rotors with internally short-circuited windings, e.g. cage rotors
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H02K17/165 3 {characterised by the squirrel-cage or other short-circuited windings}
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H02K17/18 3 having double-cage or multiple-cage rotors
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H02K17/185 4 {characterised by the double- or multiple cage windings}
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H02K17/20 3 having deep-bar rotors
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H02K17/205 4 {characterised by the deep-bar windings}
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H02K17/22 2 having rotors with windings connected to slip-rings
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H02K17/24 3 in which both stator and rotor are fed with AC
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H02K17/26 2 having rotors or stators designed to permit synchronous operation
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H02K17/28 2 having compensating winding for improving phase angle
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H02K17/30 2 Structural association of asynchronous induction motors with auxiliary electric devices influencing the characteristics of the motor or controlling the motor, e.g. with impedances or switches
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H02K17/32 2 Structural association of asynchronous induction motors with auxiliary mechanical devices, e.g. with clutches or brakes
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H02K17/34 2 Cascade arrangement of an asynchronous motor with another dynamo-electric motor or converter
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H02K17/36 3 with another asynchronous induction motor
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H02K17/38 3 with a commutator machine
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H02K17/40 3 with a rotary AC/DC converter
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H02K17/42 1 Asynchronous induction generators (H02K17/02 takes precedence)
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H02K17/44 2 Structural association with exciting machines
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H02K19/00 0 Synchronous motors or generators (having permanent magnets H02K21/00)
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H02K19/02 1 Synchronous motors
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H02K19/04 2 for single-phase current
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H02K19/06 3 Motors having windings on the stator and a variable-reluctance soft-iron rotor without windings, e.g. inductor motors
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H02K19/08 3 Motors having windings on the stator and a smooth rotor without windings of material with large hysteresis, e.g. hysteresis motors
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H02K19/10 2 for multi-phase current
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H02K19/103 3 {Motors having windings on the stator and a variable reluctance soft-iron rotor without windings}
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H02K19/106 3 {Motors having windings in the stator and a smooth rotor of material with large hysteresis without windings}
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H02K19/12 3 characterised by the arrangement of exciting windings, e.g. for self-excitation, compounding or pole-changing
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H02K19/14 2 having additional short-circuited windings for starting as asynchronous motors
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H02K19/16 1 Synchronous generators
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H02K19/18 2 having windings each turn of which co-operates only with poles of one polarity, e.g. homopolar generators
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H02K19/20 3 with variable-reluctance soft-iron rotors without winding
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H02K19/22 2 having windings each turn of which co-operates alternately with poles of opposite polarity, e.g. heteropolar generators
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H02K19/24 3 with variable-reluctance soft-iron rotors without winding
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H02K19/26 2 characterised by the arrangement of exciting windings
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H02K19/28 3 for self-excitation
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H02K19/30 3 for compounding
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H02K19/32 3 for pole-changing
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H02K19/34 2 Generators with two or more outputs
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H02K19/36 2 Structural association of synchronous generators with auxiliary electric devices influencing the characteristic of the generator or controlling the generator, e.g. with impedances or switches
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H02K19/365 3 {with a voltage regulator}
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H02K19/38 2 Structural association of synchronous generators with exciting machines
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H02K21/00 0 Synchronous motors having permanent magnets; Synchronous generators having permanent magnets
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H02K21/02 1 Details
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H02K21/021 2 {Means for mechanical adjustment of the excitation flux}
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H02K21/022 3 {by modifying the relative position between field and armature, e.g. between rotor and stator (vectorial combination of field or armature sections H02K21/029)}
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H02K21/023 4 {by varying the amount of superposition, i.e. the overlap, of field and armature}
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H02K21/024 5 {Radial air gap machines}
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H02K21/025 4 {by varying the thickness of the air gap between field and armature}
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H02K21/026 5 {Axial air gap machines}
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H02K21/027 5 {Conical air gap machines}
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H02K21/028 3 {by modifying the magnetic circuit within the field or the armature, e.g. by using shunts, by adjusting the magnets position, by vectorial combination of field or armature sections}
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H02K21/029 4 {Vectorial combination of the fluxes generated by a plurality of field sections or of the voltages induced in a plurality of armature sections}
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H02K21/04 2 Windings on magnets for additional excitation {; Windings and magnets for additional excitation}
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H02K21/042 3 {with permanent magnets and field winding both rotating}
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H02K21/044 4 {Rotor of the claw pole type}
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H02K21/046 3 {with rotating permanent magnets and stationary field winding}
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H02K21/048 4 {Rotor of the claw pole type}
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H02K21/10 2 Rotating armatures
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H02K21/12 1 with stationary armatures and rotating magnets
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H02K21/125 2 {having an annular armature coil (H02K21/14 - H02K21/24 take precedence)}
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H02K21/14 2 with magnets rotating within the armatures
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H02K21/145 3 {having an annular armature coil (with homopolar co-operation H02K21/20)}
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H02K21/16 3 having annular armature cores with salient poles (with homopolar co-operation H02K21/20)
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H02K21/18 3 having horse-shoe armature cores (with homopolar co-operation H02K21/20)
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H02K21/185 4 {with the axis of the rotor perpendicular to the plane of the armature}
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H02K21/20 3 having windings each turn of which co-operates only with poles of one polarity, e.g. homopolar machine
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H02K21/22 2 with magnets rotating around the armatures, e.g. flywheel magnetos
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H02K21/222 3 {Flywheel magnetos}
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H02K21/225 4 {having I-shaped, E-shaped or similarly shaped armature cores}
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H02K21/227 3 {having an annular armature coil}
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H02K21/24 2 with magnets axially facing the armatures, e.g. hub-type cycle dynamos
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H02K21/26 1 with rotating armatures and stationary magnets
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H02K21/28 2 with armatures rotating within the magnets
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H02K21/30 3 having annular armature cores with salient poles (with homopolar co-operation H02K21/36)
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H02K21/32 3 having horse-shoe magnets (with homopolar co-operation H02K21/36)
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H02K21/325 4 {with the axis of the rotating armature perpendicular to the plane of the magnet}
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H02K21/34 3 having bell-shaped or bar-shaped magnets, e.g. for cycle lighting (with homopolar co-operation H02K21/36)
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H02K21/36 3 with homopolar co-operation
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H02K21/38 1 with rotating flux distributors, and armatures and magnets both stationary
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H02K21/40 2 with flux distributors rotating around the magnets and within the armatures
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H02K21/42 2 with flux distributors rotating around the armatures and within the magnets
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H02K21/44 2 with armature windings wound upon the magnets
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H02K21/46 1 Motors having additional short-circuited winding for starting as an asynchronous motor
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H02K21/48 1 Generators with two or more outputs
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H02K23/00 0 DC commutator motors or generators having mechanical commutator; Universal AC/DC commutator motors
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H02K23/02 1 characterised by arrangement for exciting
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H02K23/023 2 {having short-circuited brushes}
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H02K23/026 2 {having an unregular distribution of the exciting winding or of the excitation over the poles}
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H02K23/04 2 having permanent magnet excitation
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H02K23/06 2 having shunt connection of excitation windings
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H02K23/08 2 having series connection of excitation windings
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H02K23/10 2 having compound connection of excitation windings
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H02K23/12 2 having excitation produced by current sources independent of the armature circuit
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H02K23/14 2 having high-speed excitation or de-excitation, e.g. by neutralising the remanent excitation field
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H02K23/16 2 having angularly adjustable excitation field, e.g. by pole reversing or pole switching
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H02K23/18 2 having displaceable main or auxiliary brushes
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H02K23/20 2 having additional brushes spaced intermediately of the main brushes on the commutator, e.g. cross-field machines, metadynes, amplidynes or other armature-reaction excited machines
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H02K23/22 2 having compensating or damping windings
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H02K23/24 2 having commutating-pole windings
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H02K23/26 1 characterised by the armature windings
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H02K23/28 2 having open windings, i.e. not closed within the armatures
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H02K23/30 2 having lap or loop windings
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H02K23/32 2 having wave or undulating windings
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H02K23/34 2 having mixed windings
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H02K23/36 2 having two or more windings; having two or more commutators; having two or more stators
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H02K23/38 2 having winding or connection for improving commutation, e.g. equipotential connection
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H02K23/40 1 characterised by the arrangement of the magnet circuits
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H02K23/405 2 {Machines with a special form of the pole shoes}
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H02K23/42 2 having split poles, i.e. zones for varying reluctance by gaps in poles or by poles with different spacing of the air gap
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H02K23/44 2 having movable, e.g. turnable, iron parts
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H02K23/46 2 having stationary shunts, i.e. magnetic cross flux
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H02K23/48 2 having adjustable armatures
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H02K23/50 1 Generators with two or more outputs
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H02K23/52 1 Motors acting also as generators, e.g. starting motors used as generators for ignition or lighting
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H02K23/54 1 Disc armature motors or generators
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H02K23/56 1 Motors or generators having iron cores separated from armature winding
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H02K23/58 1 Motors or generators without iron cores
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H02K23/60 1 Motors or generators having rotating armatures and rotating excitation field
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H02K23/62 1 Motors or generators with stationary armatures and rotating excitation field
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H02K23/64 1 Motors specially adapted for running on DC or AC by choice
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H02K23/66 1 Structural association with auxiliary electric devices influencing the characteristic of, or controlling, the machine, e.g. with impedances or switches
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H02K23/68 1 Structural association with auxiliary mechanical devices, e.g. with clutches or brakes
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H02K24/00 0 Machines adapted for the instantaneous transmission or reception of the angular displacement of rotating parts, e.g. synchro, selsyn
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H02K25/00 0 DC interrupter motors or generators
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H02K26/00 0 Machines adapted to function as torque motors, i.e. to exert a torque when stalled
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H02K27/00 0 AC commutator motors or generators having mechanical commutator
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H02K27/02 1 characterised by the armature winding
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H02K27/04 1 having single-phase operation in series or shunt connection
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H02K27/06 2 with a single or multiple short-circuited commutator, e.g. repulsion motor
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H02K27/08 2 with multiple-fed armature
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H02K27/10 2 with switching devices for different modes of operation, e.g. repulsion-induction motor
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H02K27/12 1 having multi-phase operation
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H02K27/14 2 in series connection
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H02K27/16 2 in shunt connection with stator feeding
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H02K27/18 2 in shunt connection with rotor feeding
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H02K27/20 1 Structural association with a speed regulating device
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H02K27/22 1 having means for improving commutation, e.g. auxiliary fields, double windings, double brushes
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H02K27/24 1 having two or more commutators
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H02K27/26 1 having disc armature
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H02K27/28 1 Structural association with auxiliary electric devices influencing the characteristic of the machine or controlling the machine
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H02K27/30 1 Structural association with auxiliary mechanical devices, e.g. with clutches or brakes
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H02K29/00 0 Motors or generators having non-mechanical commutating devices, e.g. discharge tubes or semiconductor devices
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H02K29/03 1 with a magnetic circuit specially adapted for avoiding torque ripples or self-starting problems
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H02K29/06 1 with position sensing devices (H02K29/03 takes precedence)
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H02K29/08 2 using magnetic effect devices, e.g. Hall-plates, magneto-resistors (H02K29/12 takes precedence)
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H02K29/10 2 using light effect devices
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H02K29/12 2 using detecting coils {using the machine windings as detecting coil}
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H02K29/14 1 with speed sensing devices (H02K29/03 takes precedence)
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H02K31/00 0 Acyclic motors or generators, i.e. DC machines having drum or disc armatures with continuous current collectors
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H02K31/02 1 with solid-contact collectors
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H02K31/04 1 with at least one liquid-contact collector
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H02K33/00 0 Motors with reciprocating, oscillating or vibrating magnet, armature or coil system (arrangements for handling mechanical energy structurally associated with motors H02K7/00, e.g. H02K7/06)
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H02K33/02 1 with armatures moved one way by energisation of a single coil system and returned by mechanical force, e.g. by springs
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H02K33/04 2 wherein the frequency of operation is determined by the frequency of uninterrupted AC energisation
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H02K33/06 3 with polarised armatures
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H02K33/08 3 with DC energisation superimposed on AC energisation
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H02K33/10 2 wherein the alternate energisation and de-energisation of the single coil system is effected or controlled by movement of the armatures
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H02K33/12 1 with armatures moving in alternate directions by alternate energisation of two coil systems
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H02K33/14 2 wherein the alternate energisation and de-energisation of the two coil systems are effected or controlled by movement of the armatures
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H02K33/16 1 with polarised armatures moving in alternate directions by reversal or energisation of a single coil system
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H02K33/18 1 with coil systems moving upon intermittent or reversed energisation thereof by interaction with a fixed field system, e.g. permanent magnets
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H02K35/00 0 Generators with reciprocating, oscillating or vibrating coil system, magnet, armature or other part of the magnetic circuit (arrangements for handling mechanical energy structurally associated with generators H02K7/00, e.g. H02K7/06)
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H02K35/02 1 with moving magnets and stationary coil systems
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H02K35/04 1 with moving coil systems and stationary magnets
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H02K35/06 1 with moving flux distributors, and both coil systems and magnets stationary
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H02K37/00 0 Motors with rotor rotating step by step and without interrupter or commutator driven by the rotor, e.g. stepping motors
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H02K37/02 1 of variable reluctance type
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H02K37/04 2 with rotors situated within the stators
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H02K37/06 2 with rotors situated around the stators
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H02K37/08 2 with rotors axially facing the stators
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H02K37/10 1 of permanent magnet type (H02K37/02 takes precedence)
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H02K37/12 2 with stationary armatures and rotating magnets
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H02K37/125 3 {Magnet axially facing armature}
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H02K37/14 3 with magnets rotating within the armatures
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H02K37/16 4 having horseshoe armature cores
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H02K37/18 4 of homopolar type
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H02K37/20 2 with rotating flux distributors, the armatures and magnets both being stationary
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H02K37/22 1 Damping units
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H02K37/24 1 Structural association with auxiliary mechanical devices
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H02K39/00 0 Generators specially adapted for producing a desired non-sinusoidal waveform
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H02K41/00 0 Propulsion systems in which a rigid body is moved along a path due to dynamo-electric interaction between the body and a magnetic field travelling along the path {(electromagnetic launchers F41B6/00)}
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H02K41/02 1 Linear motors; Sectional motors
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H02K41/025 2 Asynchronous motors
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H02K41/03 2 Synchronous motors; Motors moving step by step; Reluctance motors (H02K41/035 takes precedence)
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H02K41/031 3 {of the permanent magnet type}
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H02K41/033 4 {with armature and magnets on one member, the other member being a flux distributor}
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H02K41/035 2 DC motors; Unipolar motors
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H02K41/0352 3 {Unipolar motors}
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H02K41/0354 4 {Lorentz force motors, e.g. voice coil motors}
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H02K41/0356 5 {moving along a straight path}
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H02K41/0358 5 {moving along a curvilinear path}
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H02K41/06 1 Rolling motors, i.e. motors having the rotor axis parallel to the stator axis and following a circular path as the rotor rolls around the inside or outside of the stator {; Nutating motors, i.e. having the rotor axis parallel to the stator axis inclined with respect to the stator axis and performing a nutational movement as the rotor rolls on the stator}
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H02K41/065 2 {Nutating motors}
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H02K44/00 0 Machines in which the dynamo-electric interaction between a plasma or flow of conductive liquid or of fluid-borne conductive or magnetic particles and a coil system or magnetic field converts energy of mass flow into electrical energy or vice versa
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H02K44/02 1 Electrodynamic pumps
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H02K44/04 2 Conduction pumps
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H02K44/06 2 Induction pumps
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H02K44/08 1 Magnetohydrodynamic [MHD] generators
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H02K44/085 2 {with conducting liquids}
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H02K44/10 2 Constructional details of electrodes
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H02K44/12 2 Constructional details of fluid channels
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H02K44/14 3 Circular or screw-shaped channels
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H02K44/16 2 Constructional details of the magnetic circuits
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H02K44/18 2 for generating AC power
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H02K44/20 3 by changing the polarity of the magnetic field
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H02K44/22 3 by changing the conductivity of the fluid
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H02K44/24 3 by reversing the direction of fluid
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H02K44/26 3 by creating a travelling magnetic field
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H02K44/28 1 Association of MHD generators with conventional generators (nuclear power plants including a MHD generator G21D7/02)
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H02K47/00 0 Dynamo-electric converters
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H02K47/02 1 AC/DC converters or vice versa
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H02K47/04 2 Motor/generators
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H02K47/06 2 Cascade converters
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H02K47/08 2 Single-armature converters
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H02K47/10 3 with booster machines on the AC side
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H02K47/12 1 DC/DC converters
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H02K47/14 2 Motor/generators
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H02K47/16 2 Single-armature converters, e.g. metadyne
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H02K47/18 1 AC/AC converters
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H02K47/20 2 Motor/generators
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H02K47/22 2 Single-armature frequency converters with or without phase-number conversion
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H02K47/24 3 having windings for different numbers of poles
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H02K47/26 3 operating as under- or over-synchronously running asynchronous induction machines, e.g. cascade arrangement of asynchronous and synchronous machines
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H02K47/28 3 operating as commutator machines with added slip-rings
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H02K47/30 2 Single-armature phase-number converters without frequency conversion
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H02K49/00 0 Dynamo-electric clutches; Dynamo-electric brakes
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H02K49/02 1 of the asynchronous induction type
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H02K49/04 2 of the eddy-current hysteresis type
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H02K49/043 3 {with a radial airgap}
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H02K49/046 3 {with an axial airgap}
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H02K49/06 1 of the synchronous type {(H02K49/10 takes precedence)}
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H02K49/065 2 {hysteresis type}
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H02K49/08 1 of the collector armature type
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H02K49/10 1 of the permanent-magnet type
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H02K49/102 2 {Magnetic gearings, i.e. assembly of gears, linear or rotary, by which motion is magnetically transferred without physical contact (magnetized gearings with physical contact F16H13/12, F16H49/005)}
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H02K49/104 2 {Magnetic couplings consisting of only two coaxial rotary elements, i.e. the driving element and the driven element}
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H02K49/106 3 {with a radial air gap}
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H02K49/108 3 {with an axial air gap}
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H02K49/12 1 of the acyclic type
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H02K51/00 0 Dynamo-electric gears, i.e. dynamo-electric means for transmitting mechanical power from a driving shaft to a driven shaft and comprising structurally interrelated motor and generator parts
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H02K53/00 0 Alleged dynamo-electric perpetua mobilia
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H02K55/00 0 Dynamo-electric machines having windings operating at cryogenic temperatures
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H02K55/02 1 of the synchronous type
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H02K55/04 2 with rotating field windings
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H02K55/06 1 of the homopolar type
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H02K99/00 0 Subject matter not provided for in other groups of this subclass
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H02K99/10 1 {Generators}
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H02K99/20 1 {Motors}
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H02K2201/00 0 Specific aspects not provided for in the other groups of this subclass relating to the magnetic circuits
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H02K2201/03 1 Machines characterised by aspects of the air-gap between rotor and stator
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H02K2201/06 1 Magnetic cores, or permanent magnets characterised by their skew
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H02K2201/09 1 Magnetic cores comprising laminations characterised by being fastened by caulking
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H02K2201/12 1 Transversal flux machines
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H02K2201/15 1 Sectional machines
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H02K2201/18 1 Machines moving with multiple degrees of freedom
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H02K2203/00 0 Specific aspects not provided for in the other groups of this subclass relating to the windings
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H02K2203/03 1 Machines characterised by the wiring boards, i.e. printed circuit boards or similar structures for connecting the winding terminations
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H02K2203/06 1 Machines characterised by the wiring leads, i.e. conducting wires for connecting the winding terminations
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H02K2203/09 1 Machines characterised by wiring elements other than wires, e.g. bus rings, for connecting the winding terminations
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H02K2203/12 1 Machines characterised by the bobbins for supporting the windings
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H02K2203/15 1 Machines characterised by cable windings, e.g. high-voltage cables, ribbon cables
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H02K2205/00 0 Specific aspects not provided for in the other groups of this subclass relating to casings, enclosures, supports
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H02K2205/03 1 Machines characterised by thrust bearings
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H02K2205/06 1 Machines characterised by means for keeping the brushes in a retracted position during assembly
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H02K2205/09 1 Machines characterised by drain passages or by venting, breathing or pressure compensating means
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H02K2205/12 1 Machines characterised by means for reducing windage losses or windage noise
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H02K2207/00 0 Specific aspects not provided for in the other groups of this subclass relating to arrangements for handling mechanical energy
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H02K2207/03 1 Tubular motors, i.e. rotary motors mounted inside a tube, e.g. for blinds
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H02K2209/00 0 Specific aspects not provided for in the other groups of this subclass relating to systems for cooling or ventilating
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H02K2211/00 0 Specific aspects not provided for in the other groups of this subclass relating to measuring or protective devices or electric components
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H02K2211/03 1 Machines characterised by circuit boards, e.g. pcb
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H02K2213/00 0 Specific aspects, not otherwise provided for and not covered by codes H02K2201/00 - H02K2211/00
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H02K2213/03 1 Machines characterised by numerical values, ranges, mathematical expressions or similar information
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H02K2213/06 1 Machines characterised by the presence of fail safe, back up, redundant or other similar emergency arrangements
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H02K2213/09 1 Machines characterised by the presence of elements which are subject to variation, e.g. adjustable bearings, reconfigurable windings, variable pitch ventilators
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H02K2213/12 1 Machines characterised by the modularity of some components
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H02K2215/00 0 Specific aspects not provided for in other groups of this subclass relating to methods or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines
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H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
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H02M1/00 0 Details of apparatus for conversion
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H02M1/0003 1 {Details of control, feedback or regulation circuits}
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H02M1/0006 2 {Arrangements for supplying an adequate voltage to the control circuit of converters}
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H02M1/0009 2 {Devices or circuits for detecting current in a converter}
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H02M1/0012 2 {Control circuits using digital or numerical techniques (in DC/DC converters H02M3/157, H02M3/33515; in DC-AC converters H02M7/53873)}
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H02M1/0016 2 {Control circuits providing compensation of output voltage deviations using feedforward of disturbance parameters}
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H02M1/0019 3 {the disturbance parameters being load current fluctuations}
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H02M1/0022 3 {the disturbance parameters being input voltage fluctuations}
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H02M1/0025 2 {Arrangements for modifying reference values, feedback values or error values in the control loop of a converter}
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H02M1/0029 2 {Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate}
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H02M1/0032 2 {Control circuits allowing low power mode operation, e.g. in standby mode}
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H02M1/0035 3 {using burst mode control}
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H02M1/0038 2 {Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control}
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H02M1/0041 2 {Control circuits in which a clock signal is selectively enabled or disabled}
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H02M1/0043 1 {Converters switched with a phase shift, i.e. interleaved (non-isolated DC/DC converters H02M3/1586)}
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H02M1/0045 1 {Converters combining the concepts of switch-mode regulation and linear regulation, e.g. linear pre-regulator to switching converter, linear and switching converter in parallel, same converter or same transistor operating either in linear or switching mode}
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H02M1/0048 1 {Circuits or arrangements for reducing losses (using snubbers H02M1/34)}
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H02M1/0051 2 {Diode reverse recovery losses}
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H02M1/0054 2 {Transistor switching losses (periodically suspending operation of switching converter in low power mode H02M1/0035)}
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H02M1/0058 3 {by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero (using an auxiliary actively switched resonant commutation circuit connected to an intermediate DC voltage or between two push-pull branches of an inverter bridge H02M7/4811; in resonant inverters H02M7/4815; in inverters operating from a resonant DC source H02M7/4826)}
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H02M1/0061 1 {using discharge tubes}
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H02M1/0064 1 {Magnetic structures combining different functions, e.g. storage, filtering or transformation}
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H02M1/0067 1 {Converter structures employing plural converter units, other than for parallel operation of the units on a single load}
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H02M1/007 2 {Plural converter units in cascade (push-pull DC/DC converters with pre-regulator H02M3/3374; DC-AC converters following a DC-DC stage including a high frequency transformer H02M7/4807; DC-AC converters following a DC-DC conversion stage generating periodically varying voltages H02M7/4826)}
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H02M1/0074 2 {Plural converter units whose inputs are connected in series}
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H02M1/0077 2 {Plural converter units whose outputs are connected in series}
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H02M1/008 2 {Plural converter units for generating at two or more independent and non-parallel outputs, e.g. systems with plural point of load switching regulators}
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H02M1/0083 1 {Converters characterised by their input or output configuration}
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H02M1/0085 2 {Partially controlled bridges}
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H02M1/0087 2 {adapted for receiving as input a current source}
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H02M1/009 2 {having two or more independently controlled outputs (for DC-DC converter with intermediate AC H02M3/33561)}
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H02M1/0093 2 {wherein the output is created by adding a regulated voltage to or subtracting it from an unregulated input}
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H02M1/0095 1 {Hybrid converter topologies, e.g. NPC mixed with flying capacitor, thyristor converter mixed with MMC or charge pump mixed with buck}
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H02M1/0096 1 {Means for increasing hold-up time, i.e. the duration of time that a converter's output will remain within regulated limits following a loss of input power}
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H02M1/02 1 Circuits specially adapted for the generation of grid-control or igniter-control voltages for discharge tubes incorporated in static converters
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H02M1/04 2 for tubes with grid control
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H02M1/042 3 {wherein the phase of the control voltage is adjustable with reference to the AC voltage}
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H02M1/045 4 {for multiphase systems}
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H02M1/047 4 {for ignition at the zero-crossing of voltage or current}
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H02M1/06 1 Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
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H02M1/065 2 {for discharge tubes}
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H02M1/08 1 Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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H02M1/081 2 {wherein the phase of the control voltage is adjustable with reference to the AC source}
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H02M1/082 3 {with digital control}
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H02M1/083 2 {for the ignition at the zero crossing of the voltage or the current}
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H02M1/084 2 using a control circuit common to several phases of a multi-phase system
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H02M1/0845 3 {digitally controlled (or with digital control)}
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H02M1/088 2 for the simultaneous control of series or parallel connected semiconductor devices
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H02M1/092 3 the control signals being transmitted optically
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H02M1/096 3 the power supply of the control circuit being connected in parallel to the main switching element (H02M1/092 takes precedence)
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H02M1/10 1 Arrangements incorporating converting means for enabling loads to be operated at will from different kinds of power supplies, e.g. from ac or dc
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H02M1/12 1 Arrangements for reducing harmonics from ac input or output
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H02M1/123 2 {Suppression of common mode voltage or current}
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H02M1/126 2 {using passive filters}
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H02M1/14 1 Arrangements for reducing ripples from dc input or output
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H02M1/143 2 {using compensating arrangements (for reducing noise from the supply in transmission systems H04B15/005)}
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H02M1/146 2 {using discharge tubes}
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H02M1/15 2 using active elements
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H02M1/16 1 Means for providing current step on switching, e.g. with saturable reactor
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H02M1/20 1 Contact mechanisms of dynamic converters
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H02M1/22 2 incorporating collectors and brushes
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H02M1/24 2 incorporating rolling or tumbling contacts
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H02M1/26 2 incorporating cam-operated contacts
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H02M1/28 2 incorporating electromagnetically-operated vibrating contacts
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H02M1/30 2 incorporating liquid contacts
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H02M1/32 1 Means for protecting converters other than automatic disconnection
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H02M1/322 2 {Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock}
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H02M1/325 2 {with means for allowing continuous operation despite a fault, i.e. fault tolerant converters}
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H02M1/327 2 {against abnormal temperatures}
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H02M1/34 2 Snubber circuits
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H02M1/342 3 {Active non-dissipative snubbers}
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H02M1/344 3 {Active dissipative snubbers}
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H02M1/346 3 {Passive non-dissipative snubbers}
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H02M1/348 3 {Passive dissipative snubbers}
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H02M1/36 1 Means for starting or stopping converters
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H02M1/38 1 Means for preventing simultaneous conduction of switches
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H02M1/385 2 {with means for correcting output voltage deviations introduced by the dead time}
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H02M1/40 1 Means for preventing magnetic saturation
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H02M1/42 1 Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
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H02M1/4208 2 {Arrangements for improving power factor of AC input}
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H02M1/4216 3 {operating from a three-phase input voltage (H02M1/4233 takes precedence)}
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H02M1/4225 3 {using a non-isolated boost converter}
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H02M1/4233 3 {using a bridge converter comprising active switches}
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H02M1/4241 3 {using a resonant converter}
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H02M1/425 3 {using a single converter stage both for correction of AC input power factor and generation of a high frequency AC output voltage}
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H02M1/4258 3 {using a single converter stage both for correction of AC input power factor and generation of a regulated and galvanically isolated DC output voltage (H02M1/4241 takes precedence)}
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H02M1/4266 3 {using passive elements}
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H02M1/4275 3 {by adding an auxiliary output voltage in series to the input}
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H02M1/4283 3 {by adding a controlled rectifier in parallel to a first rectifier feeding a smoothing capacitor}
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H02M1/4291 3 {by using a Buck converter to switch the input current}
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H02M1/44 1 Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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H02M3/00 0 Conversion of dc power input into dc power output
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H02M3/003 1 {Constructional details, e.g. physical layout, assembly, wiring or busbar connections}
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H02M3/005 1 {using Cuk converters}
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H02M3/01 1 {Resonant DC/DC converters}
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H02M3/015 2 {with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuit}
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H02M3/02 1 without intermediate conversion into ac
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H02M3/04 2 by static converters
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H02M3/06 3 using resistors or capacitors, e.g. potential divider
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H02M3/07 4 using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps}
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H02M3/071 5 {adapted to generate a negative voltage output from a positive voltage source}
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H02M3/072 5 {adapted to generate an output voltage whose value is lower than the input voltage}
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H02M3/073 5 {Charge pumps of the Schenkel-type}
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H02M3/075 6 {including a plurality of stages and two sets of clock signals, one set for the odd and one set for the even numbered stages}
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H02M3/076 6 {the clock signals being boosted to a value being higher than the input voltage value}
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H02M3/077 6 {with parallel connected charge pump stages}
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H02M3/078 6 {with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters}
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H02M3/08 3 using discharge tubes without control electrode or semiconductor devices without control electrode
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H02M3/10 3 using discharge tubes with control electrode or semiconductor devices with control electrode (H02M3/07 takes precedence)
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H02M3/125 4 using devices of a thyratron or thyristor type requiring extinguishing means
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H02M3/13 5 using discharge tubes only
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H02M3/135 5 using semiconductor devices only
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H02M3/137 6 with automatic control of output voltage or current, e.g. switching regulators
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H02M3/139 7 with digital control
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H02M3/142 7 including plural semiconductor devices as final control devices for a single load
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H02M3/145 4 using devices of a triode or transistor type requiring continuous application of a control signal
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H02M3/15 5 using discharge tubes only
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H02M3/155 5 using semiconductor devices only
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H02M3/1552 6 {Boost converters exploiting the leakage inductance of a transformer or of an alternator as boost inductor}
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H02M3/1555 6 {for the generation of a regulated current to a load whose impedance is substantially inductive}
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H02M3/1557 6 {Single ended primary inductor converters [SEPIC]}
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H02M3/156 6 with automatic control of output voltage or current, e.g. switching regulators
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H02M3/1563 7 {without using an external clock (H02M3/158 takes precedence)}
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H02M3/1566 7 {with means for compensating against rapid load changes, e.g. with auxiliary current source, with dual mode control or with inductance variation}
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H02M3/157 7 with digital control
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H02M3/158 7 including plural semiconductor devices as final control devices for a single load
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H02M3/1582 8 {Buck-boost converters (H02M3/1584 takes precedence)}
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H02M3/1584 8 {with a plurality of power processing stages connected in parallel}
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H02M3/1586 9 {switched with a phase shift, i.e. interleaved}
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H02M3/1588 8 {comprising at least one synchronous rectifier element (H02M3/1582, H02M3/1584 take precedence)}
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H02M3/16 2 by dynamic converters
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H02M3/18 3 using capacitors or batteries which are alternately charged and discharged, e.g. charged in parallel and discharged in series
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H02M3/20 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M3/22 1 with intermediate conversion into ac
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H02M3/24 2 by static converters
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H02M3/26 3 using discharge tubes without control electrode or semiconductor devices without control electrode to produce the intermediate ac
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H02M3/28 3 using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
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H02M3/285 4 {Single converters with a plurality of output stages connected in parallel (parallel operation of a plurality of converters in dc distribution networks H02J1/10)}
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H02M3/305 4 using devices of a thyratron or thyristor type requiring extinguishing means
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H02M3/31 5 using discharge tubes only
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H02M3/315 5 using semiconductor devices only
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H02M3/3155 6 {with automatic control of the output voltage or current}
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H02M3/325 4 using devices of a triode or a transistor type requiring continuous application of a control signal
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H02M3/33 5 using discharge tubes only
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H02M3/335 5 using semiconductor devices only
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H02M3/33507 6 {with automatic control of the output voltage or current, e.g. flyback converters (H02M3/33561, H02M3/33569 take precedence)}
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H02M3/33515 7 {with digital control}
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H02M3/33523 7 {with galvanic isolation between input and output of both the power stage and the feedback loop}
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H02M3/3353 6 {having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter}
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H02M3/33538 6 {of the forward type (H02M3/3353, H02M3/33569 take precedence)}
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H02M3/33546 7 {with automatic control of the output voltage or current (H02M3/33561 takes precedence)}
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H02M3/33553 8 {with galvanic isolation between input and output of both the power stage and the feedback loop}
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H02M3/33561 6 {having more than one ouput with independent control}
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H02M3/33569 6 {having several active switching elements (H02M3/3353 takes precedence)}
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H02M3/33571 7 {Half-bridge at primary side of an isolation transformer}
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H02M3/33573 7 {Full-bridge at primary side of an isolation transformer}
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H02M3/33576 7 {having at least one active switching element at the secondary side of an isolation transformer}
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H02M3/33584 8 {Bidirectional converters}
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H02M3/33592 8 {having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer}
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H02M3/337 6 in push-pull configuration {(H02M3/33576 takes precedence; with self-oscillating arrangements H02M3/3382, H02M3/3385)}
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H02M3/3372 7 {of the parallel type}
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H02M3/3374 8 {with preregulator, e.g. current injected push-pull}
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H02M3/3376 7 {with automatic control of output voltage or current}
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H02M3/3378 8 {in a push-pull configuration of the parallel type (H02M3/3374 takes precedence)}
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H02M3/338 6 in a self-oscillating arrangement (H02M3/337 takes precedence)
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H02M3/3381 7 {using a single commutation path}
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H02M3/3382 7 {in a push-pull circuit arrangement}
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H02M3/3384 8 {of the parallel type}
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H02M3/3385 7 {with automatic control of output voltage or current (H02M3/33561 takes precedence)}
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H02M3/3387 8 {in a push-pull configuration}
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H02M3/3388 9 {of the parallel type}
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H02M3/34 2 by dynamic converters
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H02M3/36 3 using mechanical parts to select progressively or to vary continuously the input potential
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H02M3/38 3 using mechanical contact-making and -breaking parts to interrupt a single potential
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H02M3/40 4 wherein the parts are rotating and collectors co-operate with brushes or rollers
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H02M3/42 4 with electromagnetically-operated vibrating contacts, e.g. chopper
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H02M3/44 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M5/00 0 Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
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H02M5/005 1 {using discharge tubes}
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H02M5/02 1 without intermediate conversion into dc
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H02M5/04 2 by static converters (controlling transformers, reactors or choke coils, e.g. by tap changing H02P13/00)
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H02M5/06 3 using impedances
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H02M5/08 4 using capacitors only
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H02M5/10 3 using transformers
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H02M5/12 4 for conversion of voltage or current amplitude only
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H02M5/14 4 for conversion between circuits of different phase number
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H02M5/16 4 for conversion of frequency
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H02M5/18 4 for conversion of waveform
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H02M5/20 3 using discharge tubes without control electrode or semiconductor devices without control electrode
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H02M5/22 3 using discharge tubes with control electrode or semiconductor devices with control electrode
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H02M5/225 4 {comprising two stages of AC-AC conversion, e.g. having a high frequency intermediate link}
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H02M5/25 4 using devices of a thyratron or thyristor type requiring extinguishing means
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H02M5/253 5 using discharge tubes only
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H02M5/257 5 using semiconductor devices only
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H02M5/2573 6 {with control circuit}
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H02M5/2576 7 {with digital control}
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H02M5/27 5 for conversion of frequency
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H02M5/271 6 {from a three phase input voltage}
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H02M5/272 6 {for variable speed constant frequency systems}
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H02M5/273 6 {with digital control}
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H02M5/275 4 using devices of a triode or transistor type requiring continuous application of a control signal
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H02M5/29 5 using discharge tubes only
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H02M5/293 5 using semiconductor devices only
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H02M5/2932 6 {with automatic control of output voltage, current or power}
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H02M5/2935 7 {using reverse phase control, i.e. turn-on of switches in series with load at zero crossing of input voltage, turn-off before next zero crossing}
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H02M5/2937 7 {using whole cycle control, i.e. switching an integer number of whole or half cycles of the AC input voltage}
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H02M5/297 5 for conversion of frequency
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H02M5/32 2 by dynamic converters
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H02M5/34 3 using mechanical contact-making and -breaking parts
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H02M5/36 4 wherein the parts are rotating and collectors co-operate with brushes or rollers
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H02M5/38 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M5/40 1 with intermediate conversion into dc
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H02M5/42 2 by static converters
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H02M5/44 3 using discharge tubes or semiconductor devices to convert the intermediate dc into ac
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H02M5/443 4 using devices of a thyratron or thyristor type requiring extinguishing means
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H02M5/447 5 using discharge tubes only
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H02M5/45 5 using semiconductor devices only
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H02M5/4505 6 {having a rectifier with controlled elements}
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H02M5/451 6 with automatic control of output voltage or frequency
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H02M5/452 6 with automatic control of output waveform
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H02M5/453 4 using devices of a triode or transistor type requiring continuous application of a control signal
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H02M5/456 5 using discharge tubes only
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H02M5/458 5 using semiconductor devices only
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H02M5/4585 6 {having a rectifier with controlled elements}
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H02M5/46 2 by dynamic converters
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H02M5/48 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M7/00 0 Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
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H02M7/003 1 {Constructional details, e.g. physical layout, assembly, wiring or busbar connections}
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H02M7/006 1 {using discharge tubes}
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H02M7/02 1 Conversion of ac power input into dc power output without possibility of reversal
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H02M7/04 2 by static converters
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H02M7/043 3 {using transformers or inductors only}
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H02M7/046 3 {using discharge tubes}
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H02M7/05 3 {Capacitor coupled rectifiers}
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H02M7/06 3 using discharge tubes without control electrode or semiconductor devices without control electrode
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H02M7/062 4 {Avoiding or suppressing excessive transient voltages or currents}
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H02M7/064 4 {with several outputs}
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H02M7/066 4 {particular circuits having a special characteristic}
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H02M7/068 4 {mounted on a transformer}
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H02M7/08 4 arranged for operation in parallel
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H02M7/10 4 arranged for operation in series, e.g. for multiplication of voltage
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H02M7/103 5 {Containing passive elements (capacitively coupled) which are ordered in cascade on one source}
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H02M7/106 6 {With physical arrangement details}
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H02M7/12 3 using discharge tubes with control electrode or semiconductor devices with control electrode
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H02M7/125 4 {Avoiding or suppressing excessive transient voltages or currents}
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H02M7/145 4 using devices of a thyratron or thyristor type requiring extinguishing means
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H02M7/15 5 using discharge tubes only
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H02M7/151 6 {with automatic control (H02M7/153 takes precedence)}
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H02M7/153 6 {arranged for operation in parallel}
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H02M7/155 5 using semiconductor devices only
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H02M7/1552 6 {in a biphase or polyphase arrangement (voltage multipliers H02M7/19)}
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H02M7/1555 6 {with control circuit}
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H02M7/1557 7 {with automatic control of the output voltage or current}
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H02M7/162 6 in a bridge configuration
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H02M7/1623 7 {with control circuit}
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H02M7/1626 8 {with automatic control of the output voltage or current}
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H02M7/17 6 arranged for operation in parallel
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H02M7/19 6 arranged for operation in series, e.g. for voltage multiplication
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H02M7/21 4 using devices of a triode or transistor type requiring continuous application of a control signal
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H02M7/213 5 using discharge tubes only
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H02M7/217 5 using semiconductor devices only
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H02M7/2173 6 {in a biphase or polyphase circuit arrangement (H02M7/2176 takes precedence; voltage multipliers H02M7/25)}
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H02M7/2176 6 {comprising a passive stage to generate a rectified sinusoidal voltage and a controlled switching element in series between such stage and the output}
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H02M7/219 6 in a bridge configuration
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H02M7/2195 7 {the switches being synchronously commutated at the same frequency of the AC input voltage}
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H02M7/23 6 arranged for operation in parallel {(H02M7/2176 takes precedence)}
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H02M7/25 6 arranged for operation in series, e.g. for multiplication of voltage
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H02M7/26 3 using open-spark devices, e.g. Marx rectifier
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H02M7/28 3 using electrolytic rectifiers
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H02M7/30 2 by dynamic converters
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H02M7/32 3 using mechanical contact-making and -breaking parts
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H02M7/34 4 wherein the parts are rotating and collectors co-operate with brushes or rollers
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H02M7/36 4 with electromagnetically-operated vibrating contacts, e.g. chopper
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H02M7/38 3 using one or more sparking electrodes rotating over counterelectrodes
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H02M7/40 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M7/42 1 Conversion of dc power input into ac power output without possibility of reversal
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H02M7/44 2 by static converters
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H02M7/445 3 {using discharge tubes}
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H02M7/46 3 using discharge tubes without control electrode or semiconductor devices without control electrode
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H02M7/48 3 using discharge tubes with control electrode or semiconductor devices with control electrode
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H02M7/4803 4 {with means for reducing DC component from AC output voltage}
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H02M7/4807 4 {having a high frequency intermediate AC stage}
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H02M7/4811 4 {having auxiliary actively switched resonant commutation circuits connected to intermediate DC voltage or between two push-pull branches}
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H02M7/4815 4 {Resonant converters (H02M7/4811 and H02M7/4826 take precedence)}
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H02M7/4818 5 {with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuits}
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H02M7/4826 4 {operating from a resonant DC source, i.e. the DC input voltage varies periodically, e.g. resonant DC-link inverters}
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H02M7/483 4 Converters with outputs that each can have more than two voltages levels
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H02M7/4833 5 {Capacitor voltage balancing}
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H02M7/4835 5 {comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage}
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H02M7/4837 5 {Flying capacitor converters}
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H02M7/487 5 Neutral point clamped inverters
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H02M7/49 5 Combination of the output voltage waveforms of a plurality of converters
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H02M7/493 4 the static converters being arranged for operation in parallel
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H02M7/497 4 sinusoidal output voltages being obtained by combination of several voltages being out of phase
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H02M7/501 4 sinusoidal output voltages being obtained by the combination of several pulse-voltages having different amplitude and width
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H02M7/505 4 using devices of a thyratron or thyristor type requiring extinguishing means {(H02M7/4807, H02M7/483, H02M7/493 and H02M7/4826 take precedence)}
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H02M7/51 5 using discharge tubes only
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H02M7/515 5 using semiconductor devices only
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H02M7/5152 6 {with separate extinguishing means}
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H02M7/5155 7 {wherein each commutation element has its own extinguishing means}
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H02M7/5157 6 {wherein the extinguishing of every commutation element will be obtained by means of a commutation inductance, by starting another main commutation element in series with the first}
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H02M7/516 6 Self-oscillating arrangements
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H02M7/517 6 with special starting equipment
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H02M7/519 6 in a push-pull configuration (H02M7/517 takes precedence)
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H02M7/521 6 in a bridge configuration
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H02M7/523 6 with LC-resonance circuit in the main circuit
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H02M7/5233 7 {the commutation elements being in a push-pull arrangement}
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H02M7/5236 8 {in a series push-pull arrangement}
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H02M7/525 6 with automatic control of output waveform or frequency (H02M7/517 - H02M7/523 take precedence)
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H02M7/527 7 by pulse width modulation
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H02M7/529 8 using digital control
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H02M7/53 4 using devices of a triode or transistor type requiring continuous application of a control signal {(H02M7/4807, H02M7/493 and H02M7/4826 take precedence)}
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H02M7/533 5 using discharge tubes only
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H02M7/537 5 using semiconductor devices only, e.g. single switched pulse inverters
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H02M7/5375 6 with special starting equipment
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H02M7/538 6 in a push-pull configuration (H02M7/5375 takes precedence {; with oscillating arrangements H02M7/53832, H02M7/53846})
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H02M7/53803 7 {with automatic control of output voltage or current}
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H02M7/53806 8 {in a push-pull configuration of the parallel type}
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H02M7/5381 7 Parallel type
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H02M7/5383 6 in a self-oscillating arrangement (H02M7/538 takes precedence)
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H02M7/53832 7 {in a push-pull arrangement}
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H02M7/53835 8 {of the parallel type}
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H02M7/53838 7 using a single commutation path
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H02M7/53846 7 Control circuits
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H02M7/538463 8 {for thyristor type converters}
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H02M7/538466 8 {for transistor type converters}
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H02M7/53854 8 using thyristor type converters
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H02M7/53862 8 using transistor type converters
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H02M7/5387 6 in a bridge configuration
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H02M7/53871 7 {with automatic control of output voltage or current}
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H02M7/53873 8 {with digital control}
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H02M7/53875 8 {with analogue control of three-phase output}
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H02M7/53876 9 {based on synthesising a desired voltage vector via the selection of appropriate fundamental voltage vectors, and corresponding dwelling times}
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H02M7/53878 8 {by time shifting switching signals of one diagonal pair of the bridge with respect to the other diagonal pair}
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H02M7/5388 7 with asymmetrical configuration of switches
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H02M7/539 6 with automatic control of output wave form or frequency (H02M7/5375 - H02M7/5387 take precedence)
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H02M7/5395 7 by pulse-width modulation
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H02M7/54 2 by dynamic converters
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H02M7/56 3 using mechanical parts to select progressively, or to vary continuously, the input potential
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H02M7/58 3 using mechanical contact-making and -breaking parts to interrupt a single potential
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H02M7/60 4 wherein the parts are rotating and collectors co-operate with brushes or rollers
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H02M7/62 4 with electromagnetically-operated vibrating contacts, e.g. chopper
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H02M7/64 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M7/66 1 with possibility of reversal
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H02M7/68 2 by static converters
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H02M7/70 3 using discharge tubes without control electrode or semiconductor devices without control electrode
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H02M7/72 3 using discharge tubes with control electrode or semiconductor devices with control electrode
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H02M7/75 4 using devices of a thyratron or thyristor type requiring extinguishing means
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H02M7/753 5 using discharge tubes only
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H02M7/757 5 using semiconductor devices only
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H02M7/7575 6 {for high voltage direct transmission link}
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H02M7/758 6 with automatic control of output waveform or frequency
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H02M7/77 5 arranged for operation in parallel
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H02M7/79 4 using devices of a triode or transistor type requiring continuous application of a control signal
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H02M7/793 5 using discharge tubes only
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H02M7/797 5 using semiconductor devices only
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H02M7/81 5 arranged for operation in parallel
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H02M7/82 3 using open-spark devices, e.g. Marx rectifier
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H02M7/84 3 using electrolytic rectifiers
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H02M7/86 2 by dynamic converters
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H02M7/88 3 using mechanical parts to select progressively or to vary continuously the input potential
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H02M7/90 3 using mechanical contact-making and -breaking parts to interrupt a single potential
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H02M7/92 4 wherein the parts are rotating and collectors co-operate with brushes or rollers
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H02M7/94 4 wherein the parts are operated by rotating cams or cam-like devices
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H02M7/95 4 with electromagnetically-operated vibrating contacts, e.g. chopper
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H02M7/96 4 with moving liquid contacts
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H02M7/98 2 by combination of static with dynamic converters; by combination of dynamo-electric with other dynamic or static converters
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H02M11/00 0 Power conversion systems not covered by the preceding groups
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H02N ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
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H02N1/00 0 Electrostatic generators or motors using a solid moving electrostatic charge carrier
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H02N1/002 1 {Electrostatic motors}
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H02N1/004 2 {in which a body is moved along a path due to interaction with an electric field travelling along the path}
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H02N1/006 2 {of the gap-closing type (H02N1/004 takes precedence)}
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H02N1/008 3 {Laterally driven motors, e.g. of the comb-drive type}
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H02N1/04 1 Friction generators
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H02N1/06 1 Influence generators
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H02N1/08 2 with conductive charge carrier, i.e. capacitor machines
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H02N1/10 2 with non-conductive charge carrier
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H02N1/12 3 in the form of a conveyor belt, e.g. van de Graaff machine
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H02N2/00 0 Electric machines in general using piezo-electric effect, electrostriction or magnetostriction (generating mechanical vibrations in general B06B; piezo-electric, electrostrictive or magnetostrictive devices in general H10N30/00)
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H02N2/0005 1 {producing non-specific motion; Details common to machines covered by H02N2/02 - H02N2/16}
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H02N2/001 2 {Driving devices, e.g. vibrators}
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H02N2/0015 3 {using only bending modes}
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H02N2/002 3 {using only longitudinal or radial modes}
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H02N2/0025 4 {using combined longitudinal modes}
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H02N2/003 3 {using longitudinal or radial modes combined with bending modes}
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H02N2/0035 4 {Cylindrical vibrators}
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H02N2/004 4 {Rectangular vibrators}
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H02N2/0045 3 {using longitudinal or radial modes combined with torsion or shear modes}
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H02N2/005 2 {Mechanical details, e.g. housings (casings for dynamo-electric machines H02K5/00)}
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H02N2/0055 3 {Supports for driving or driven bodies; Means for pressing driving body against driven body}
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H02N2/006 4 {Elastic elements, e.g. springs (in general F16F1/00)}
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H02N2/0065 3 {Friction interface (friction linings F16D69/00)}
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H02N2/007 4 {Materials}
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H02N2/0075 2 {Electrical details, e.g. drive or control circuits or methods}
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H02N2/008 3 {Means for controlling vibration frequency or phase, e.g. for resonance tracking}
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H02N2/0085 3 {Leads; Wiring arrangements}
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H02N2/009 2 {Thermal details, e.g. cooling means}
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H02N2/0095 1 {producing combined linear and rotary motion, e.g. multi-direction positioners}
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H02N2/02 1 producing linear motion, e.g. actuators; Linear positioners {; Linear motors}
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H02N2/021 2 {using intermittent driving, e.g. step motors, piezoleg motors}
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H02N2/023 3 {Inchworm motors}
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H02N2/025 3 {Inertial sliding motors}
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H02N2/026 2 {by pressing one or more vibrators against the driven body}
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H02N2/028 2 {along multiple or arbitrary translation directions, e.g. XYZ stages}
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H02N2/04 2 Constructional details
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H02N2/043 3 {Mechanical transmission means, e.g. for stroke amplification}
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H02N2/046 4 {for conversion into rotary motion}
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H02N2/06 2 Drive circuits; Control arrangements {or methods}
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H02N2/062 3 {Small signal circuits; Means for controlling position or derived quantities, e.g. for removing hysteresis}
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H02N2/065 3 {Large signal circuits, e.g. final stages}
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H02N2/067 4 {generating drive pulses}
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H02N2/08 2 using travelling waves {, i.e. Rayleigh surface waves}
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H02N2/10 1 producing rotary motion, e.g. rotary motors
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H02N2/101 2 {using intermittent driving, e.g. step motors}
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H02N2/103 2 {by pressing one or more vibrators against the rotor}
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H02N2/105 2 {Cycloid or wobble motors; Harmonic traction motors}
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H02N2/106 2 {Langevin motors}
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H02N2/108 2 {around multiple axes of rotation, e.g. spherical rotor motors}
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H02N2/12 2 Constructional details
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H02N2/123 3 {Mechanical transmission means, e.g. for gearing}
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H02N2/126 4 {for conversion into linear motion}
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H02N2/14 2 Drive circuits; Control arrangements {or methods}
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H02N2/142 3 {Small signal circuits; Means for controlling position or derived quantities, e.g. speed, torque, starting, stopping, reversing}
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H02N2/145 3 {Large signal circuits, e.g. final stages}
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H02N2/147 4 {Multi-phase circuits}
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H02N2/16 2 using travelling waves {, i.e. Rayleigh surface waves}
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H02N2/163 3 {Motors with ring stator}
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H02N2/166 3 {Motors with disc stator}
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H02N2/18 1 producing electrical output from mechanical input, e.g. generators (for measurement devices G01)
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H02N2/181 2 {Circuits; Control arrangements or methods}
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H02N2/183 2 {using impacting bodies (high voltage generators in spark lighters F23Q)}
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H02N2/185 2 {using fluid streams}
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H02N2/186 2 {Vibration harvesters}
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H02N2/188 3 {adapted for resonant operation}
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H02N2/22 1 {Methods relating to manufacturing, e.g. assembling, calibration}
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H02N3/00 0 Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom (discharge tubes functioning as thermionic generators H01J45/00)
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H02N10/00 0 Electric motors using thermal effects {(motors using expansion or contraction of bodies due to heating or cooling F03G7/06)}
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H02N11/00 0 Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means (by hydrostatic pressure F03B17/04; {by mechanical means F03G7/10;} by dynamo-electric means, {including arrangements of permanent magnets interacting with other permanent magnets,} H02K53/00)
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H02N11/002 1 {Generators}
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H02N11/004 2 {adapted for producing a desired non-sinusoidal waveform}
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H02N11/006 1 {Motors}
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H02N11/008 1 {Alleged electric or magnetic perpetua mobilia}
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H02N13/00 0 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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H02N15/00 0 Holding or levitation devices using magnetic attraction or repulsion, not otherwise provided for (electric or magnetic devices for holding work on machine tools B23Q3/15 {; monorail vehicle propulsion or suspension B60L13/00}; sliding or levitation devices for railway systems B61B13/08; material handling devices associated with conveyors incorporating devices with electrostatic or magnetic grippers B65G47/92; separating thin or filamentary articles from piles using magnetic force B65H3/16; delivering thin or filamentary articles from magnetic holders by air blast or suction B65H29/24; bearings using magnetic or electric supporting means F16C32/04; relieving bearing loads using magnetic means F16C39/06; magnets H01F7/00; dynamo-electric clutches or brakes H02K49/00 {; electric furnaces with simultaneous levitation and heating H05B6/32})
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H02N15/02 1 by Foucault currents
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H02N15/04 1 Repulsion by the Meissner effect (superconductors or hyperconductors in general H10N60/00)
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H02N99/00 0 Subject matter not provided for in other groups of this subclass
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H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
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H02P1/00 0 Arrangements for starting electric motors or dynamo-electric converters (starting of synchronous motors with electronic commutators except reluctance motors, H02P6/20, H02P6/22; starting dynamo-electric motors rotating step by step H02P8/04; vector control H02P21/00)
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H02P1/02 1 Details
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H02P1/021 2 {Protection against "no voltage condition"}
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H02P1/022 2 {Security devices, e.g. correct phase sequencing}
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H02P1/023 3 {Protection against sparking of contacts or sticking together}
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H02P1/024 3 {Protection against simultaneous starting by two starting devices}
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H02P1/025 3 {Protection against starting if starting resistor is not at zero position}
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H02P1/026 3 {Means for delayed starting}
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H02P1/027 2 {Special design of starting resistor}
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H02P1/028 2 {wherein the motor voltage is increased at low speed, to start or restart high inertia loads}
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H02P1/029 2 {Restarting, e.g. after power failure}
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H02P1/04 2 Means for controlling progress of starting sequence in dependence upon time or upon current, speed, or other motor parameter
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H02P1/06 3 Manually-operated multi-position starters
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H02P1/08 3 Manually-operated on/off switch controlling power-operated multi-position switch or impedances for starting a motor
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H02P1/10 3 Manually-operated on/off switch controlling relays or contactors operating sequentially for starting a motor (sequence determined by power-operated multi-position switch H02P1/08)
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H02P1/12 3 Switching devices centrifugally operated by the motor
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H02P1/14 3 Pressure-sensitive resistors centrifugally operated by the motor
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H02P1/16 1 for starting dynamo-electric motors or dynamo-electric converters
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H02P1/163 2 {for starting an individual reluctance motor}
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H02P1/166 2 {Driving load with high inertia}
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H02P1/18 2 for starting an individual dc motor
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H02P1/20 3 by progressive reduction of resistance in series with armature winding
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H02P1/22 3 in either direction of rotation
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H02P1/24 2 for starting an individual ac commutator motor (starting of ac/dc commutator motors H02P1/18)
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H02P1/26 2 for starting an individual polyphase induction motor
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H02P1/265 3 {Means for starting or running a triphase motor on a single phase supply}
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H02P1/28 3 by progressive increase of voltage applied to primary circuit of motor
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H02P1/30 3 by progressive increase of frequency of supply to primary circuit of motor
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H02P1/32 3 by star-delta switching
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H02P1/34 3 by progressive reduction of impedance in secondary circuit
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H02P1/36 4 the impedance being a liquid resistance
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H02P1/38 3 by pole-changing
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H02P1/40 3 in either direction of rotation
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H02P1/42 2 for starting an individual single-phase induction motor {(H02P27/04 takes precedence)}
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H02P1/423 3 {by using means to limit the current in the main winding}
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H02P1/426 3 {by using a specially adapted frequency converter}
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H02P1/44 3 by phase-splitting with a capacitor
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H02P1/445 4 {by using additional capacitors switched at start up}
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H02P1/46 2 for starting an individual synchronous motor {(H02P27/04 takes precedence)}
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H02P1/465 3 {for starting an individual single-phase synchronous motor}
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H02P1/48 3 by pole-changing
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H02P1/50 3 by changing over from asynchronous to synchronous operation (H02P1/48 takes precedence)
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H02P1/52 3 by progressive increase of frequency of supply to motor
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H02P1/54 2 for starting two or more dynamo-electric motors
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H02P1/56 3 simultaneously
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H02P1/58 3 sequentially
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H02P3/00 0 Arrangements for stopping or slowing electric motors, generators, or dynamo-electric converters (stopping of synchronous motors with electronic commutators except reluctance motors, H02P6/24; stopping dynamo-electric motors rotating step by step H02P8/24; vector control H02P21/00)
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H02P3/02 1 Details
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H02P3/025 2 {holding the rotor in a fixed position after deceleration}
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H02P3/04 2 Means for stopping or slowing by a separate brake, e.g. friction brake, eddy-current brake (brakes F16D, H02K49/00)
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H02P3/06 1 for stopping or slowing an individual dynamo-electric motor or dynamo-electric converter
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H02P3/065 2 {for stopping or slowing a reluctance motor}
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H02P3/08 2 for stopping or slowing a dc motor
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H02P3/10 3 by reversal of supply connections
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H02P3/12 3 by short-circuit or resistive braking
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H02P3/14 3 by regenerative braking
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H02P3/16 3 by combined electrical and mechanical braking
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H02P3/18 2 for stopping or slowing an ac motor
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H02P3/20 3 by reversal of phase sequence of connections to the motor
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H02P3/22 3 by short-circuit or resistive braking
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H02P3/24 3 by applying dc to the motor
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H02P3/26 3 by combined electrical and mechanical braking
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H02P4/00 0 Arrangements specially adapted for regulating or controlling the speed or torque of electric motors that can be connected to two or more different electric power supplies (vector control H02P21/00)
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H02P5/00 0 Arrangements specially adapted for regulating or controlling the speed or torque of two or more electric motors (H02P6/04, H02P8/40 take precedence)
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H02P5/46 1 for speed regulation of two or more dynamo-electric motors in relation to one another
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H02P5/48 2 by comparing mechanical values representing the speeds
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H02P5/485 3 using differential movement of the two motors, e.g. using differential gearboxes
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H02P5/49 3 by intermittently closing or opening electrical contacts
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H02P5/50 2 by comparing electrical values representing the speeds
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H02P5/505 3 using equalising lines, e.g. rotor and stator lines of first and second motors
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H02P5/51 3 Direct ratio control
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H02P5/52 2 additionally providing control of relative angular displacement
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H02P5/54 3 Speed and position comparison between the motors by mechanical means
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H02P5/56 3 Speed and position comparison between the motors by electrical means
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H02P5/60 1 controlling combinations of dc and ac dynamo-electric motors (H02P5/46 takes precedence)
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H02P5/68 1 controlling two or more dc dynamo-electric motors (H02P5/46, H02P5/60 take precedence)
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H02P5/685 2 electrically connected in series, i.e. carrying the same current
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H02P5/69 2 mechanically coupled by gearing
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H02P5/695 3 Differential gearing
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H02P5/74 1 controlling two or more ac dynamo-electric motors (H02P5/46, H02P5/60 take precedence)
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H02P5/747 2 mechanically coupled by gearing
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H02P5/753 3 Differential gearing
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H02P6/00 0 Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor (vector control H02P21/00)
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H02P6/005 1 {Arrangements for controlling doubly fed motors}
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H02P6/006 1 {Controlling linear motors}
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H02P6/007 1 {wherein the position is detected using the ripple of the current caused by the commutation}
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H02P6/04 1 Arrangements for controlling or regulating the speed or torque of more than one motor (H02P6/10 takes precedence)
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H02P2006/045 2 {Control of current}
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H02P6/06 1 Arrangements for speed regulation of a single motor wherein the motor speed is measured and compared with a given physical value so as to adjust the motor speed
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H02P6/08 1 Arrangements for controlling the speed or torque of a single motor (H02P6/10, H02P6/28 take precedence)
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H02P6/085 2 {in a bridge configuration}
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H02P6/10 1 Arrangements for controlling torque ripple, e.g. providing reduced torque ripple
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H02P6/12 1 Monitoring commutation; Providing indication of commutation failure
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H02P6/14 1 Electronic commutators
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H02P6/15 2 Controlling commutation time
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H02P6/153 3 {wherein the commutation is advanced from position signals phase in function of the speed}
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H02P6/157 3 {wherein the commutation is function of electro-magnetic force [EMF]}
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H02P6/16 2 Circuit arrangements for detecting position
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H02P6/17 3 and for generating speed information
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H02P6/18 3 without separate position detecting elements
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H02P6/181 4 {using different methods depending on the speed}
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H02P6/182 4 using back-emf in windings
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H02P6/183 4 {using an injected high frequency signal}
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H02P6/185 4 using inductance sensing, e.g. pulse excitation
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H02P6/186 4 {using difference of inductance or reluctance between the phases}
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H02P6/187 4 {using the star point voltage}
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H02P6/188 4 {using the voltage difference between the windings (H02P6/182 takes precedence)}
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H02P6/20 1 Arrangements for starting (H02P6/08 takes precedence)
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H02P6/21 2 Open loop start
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H02P6/22 2 in a selected direction of rotation
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H02P6/24 1 Arrangements for stopping
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H02P6/26 1 Arrangements for controlling single phase motors
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H02P6/28 1 Arrangements for controlling current (H02P6/10 takes precedence)
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H02P6/30 1 Arrangements for controlling the direction of rotation (H02P6/22 takes precedence)
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H02P6/32 1 Arrangements for controlling wound field motors, e.g. motors with exciter coils
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H02P6/34 1 Modelling or simulation for control purposes
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H02P7/00 0 Arrangements for regulating or controlling the speed or torque of electric DC motors
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H02P7/0094 1 {wherein the position is detected using the ripple of the current caused by the commutator}
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H02P7/02 1 the DC motors being of the linear type
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H02P7/025 2 the DC motors being of the moving coil type, e.g. voice coil motors
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H02P7/03 1 for controlling the direction of rotation of DC motors
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H02P7/04 2 {by means of a H-bridge circuit}
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H02P7/05 2 {by means of electronic switching}
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H02P7/06 1 for regulating or controlling an individual dc dynamo-electric motor by varying field or armature current
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H02P7/063 2 {using centrifugal devices, e.g. switch, resistor}
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H02P7/066 2 {using a periodic interrupter, e.g. Tirrill regulator}
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H02P7/08 2 by manual control without auxiliary power
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H02P7/10 3 of motor field only
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H02P7/12 4 Switching field from series to shunt excitation or vice versa
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H02P7/14 3 of voltage applied to the armature with or without control of field {Ward-Leonard}
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H02P7/18 2 by master control with auxiliary power
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H02P7/20 3 using multi-position switch, e.g. drum, controlling motor circuit by means of relays (H02P7/24, H02P7/30 take precedence)
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H02P7/22 3 using multi-position switch, e.g. drum, controlling motor circuit by means of pilot-motor-operated multi-position switch or pilot-motor-operated variable resistance (H02P7/24, H02P7/30 take precedence)
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H02P7/24 3 using discharge tubes or semiconductor devices
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H02P7/245 4 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/26 4 using discharge tubes
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H02P7/265 5 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/28 4 using semiconductor devices
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H02P7/2805 5 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/281 5 the DC motor being operated in four quadrants
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H02P7/2815 6 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/282 5 controlling field supply only
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H02P7/2825 6 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/285 5 controlling armature supply only
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H02P7/2855 6 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/288 6 using variable impedance
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H02P7/2885 7 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/29 6 using pulse modulation
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H02P7/291 7 with on-off control between two set points, e.g. controlling by hysteresis
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H02P7/2913 7 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/292 6 using static converters, e.g. AC to DC
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H02P7/293 7 using phase control (H02P7/295 takes precedence)
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H02P7/295 7 of the kind having a thyristor or the like in series with the power supply and the motor
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H02P7/298 5 controlling armature and field supply
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H02P7/2985 6 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/30 3 using magnetic devices with controllable degree of saturation, i.e. transductors
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H02P7/305 4 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/32 3 using armature-reaction-excited machines, e.g. metadyne, amplidyne, rototrol
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H02P7/325 4 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P7/34 3 using Ward-Leonard arrangements
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H02P7/343 4 in which both generator and motor fields are controlled
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H02P7/347 4 in which only the generator field is controlled
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H02P7/348 3 {for changing between series and parallel connections of motors}
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H02P8/00 0 Arrangements for controlling dynamo-electric motors of the kind having motors rotating step by step (vector control H02P21/00)
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H02P8/005 1 {of linear motors}
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H02P8/02 1 specially adapted for single-phase or bi-pole stepper motors, e.g. watch-motors, clock-motors
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H02P8/04 1 Arrangements for starting
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H02P8/06 2 in selected direction of rotation
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H02P8/08 2 Determining position before starting
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H02P8/10 2 Shaping pulses for starting; Boosting current during starting
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H02P8/12 1 Control or stabilisation of current
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H02P8/14 1 Arrangements for controlling speed or speed and torque (H02P8/12, H02P8/22 take precedence)
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H02P8/16 2 Reducing energy dissipated or supplied
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H02P8/165 3 {using two level supply voltage}
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H02P8/18 2 Shaping of pulses, e.g. to reduce torque ripple
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H02P8/20 2 characterised by bidirectional operation
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H02P8/22 1 Control of step size; Intermediate stepping, e.g. microstepping
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H02P8/24 1 Arrangements for stopping (H02P8/32 takes precedence)
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H02P8/26 2 Memorising final pulse when stopping
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H02P8/28 2 Disconnecting power source when stopping
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H02P8/30 2 Holding position when stopped
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H02P8/32 1 Reducing overshoot or oscillation, e.g. damping
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H02P8/34 1 Monitoring operation (H02P8/36 takes precedence)
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H02P8/36 1 Protection against faults, e.g. against overheating, step-out; Indicating faults (emergency protective arrangements with automatic interruption of supply H02H7/08)
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H02P8/38 2 the fault being step-out
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H02P8/40 1 Special adaptations for controlling two or more stepping motors
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H02P8/42 1 characterised by non-stepper motors being operated step by step
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H02P9/00 0 Arrangements for controlling electric generators for the purpose of obtaining a desired output (Ward-Leonard arrangements H02P7/34; vector control H02P21/00; feeding a network by two or more generators H02J; for charging batteries H02J7/14)
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H02P9/006 1 {Means for protecting the generator by using control (H02H7/06 takes precedence; control effected upon generator excitation circuit to reduce harmful effects of overloads or transients H02P9/10)}
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H02P9/007 1 {Control circuits for doubly fed generators}
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H02P9/008 1 {wherein the generator is controlled by the requirements of the prime mover}
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H02P9/009 1 {Circuit arrangements for detecting rotor position}
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H02P9/02 1 Details
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H02P9/04 1 Control effected upon non-electric prime mover and dependent upon electric output value of the generator (effecting control of the prime mover in general, see the relevant class for such prime mover)
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H02P9/06 1 Control effected upon clutch or other mechanical power transmission means and dependent upon electric output value of the generator (effecting control of the power transmission means, see the relevant class for such means)
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H02P9/08 1 Control of generator circuit during starting or stopping of driving means, e.g. for initiating excitation
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H02P9/10 1 Control effected upon generator excitation circuit to reduce harmful effects of overloads or transients, e.g. sudden application of load, sudden removal of load, sudden change of load
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H02P9/102 2 {for limiting effects of transients}
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H02P9/105 2 {for increasing the stability}
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H02P9/107 2 {for limiting effects of overloads}
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H02P9/12 2 for demagnetising; for reducing effects of remanence; for preventing pole reversal
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H02P9/123 3 {for demagnetising; for reducing effects of remanence}
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H02P9/126 3 {for preventing pole reversal}
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H02P9/14 1 by variation of field (H02P9/08, H02P9/10 take precedence)
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H02P9/16 2 due to variation of ohmic resistance in field circuit, using resistances switched in or out of circuit step by step
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H02P9/18 3 the switching being caused by a servomotor, measuring instrument, or relay
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H02P9/20 2 due to variation of continuously-variable ohmic resistance
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H02P9/22 3 comprising carbon pile resistance
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H02P9/24 2 due to variation of make-to-break ratio of intermittently-operating contacts, e.g. using Tirrill regulator
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H02P9/26 2 using discharge tubes or semiconductor devices (H02P9/34 takes precedence)
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H02P9/28 3 using discharge tubes
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H02P9/30 3 using semiconductor devices
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H02P9/302 4 {Brushless excitation}
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H02P9/305 4 {controlling voltage (H02P9/302 takes precedence)}
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H02P9/307 5 {more than one voltage output}
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H02P9/32 2 using magnetic devices with controllable degree of saturation (H02P9/34 takes precedence)
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H02P9/34 2 using magnetic devices with controllable degree of saturation in combination with controlled discharge tube or controlled semiconductor device
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H02P9/36 2 using armature-reaction-excited machines
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H02P9/38 2 Self-excitation by current derived from rectification of both output voltage and output current of generator
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H02P9/40 1 by variation of reluctance of magnetic circuit of generator
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H02P9/42 1 to obtain desired frequency without varying speed of the generator
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H02P9/44 1 Control of frequency and voltage in predetermined relation, e.g. constant ratio
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H02P9/46 1 Control of asynchronous generator by variation of capacitor
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H02P9/48 1 Arrangements for obtaining a constant output value at varying speed of the generator, e.g. on vehicle (H02P9/04 - H02P9/46 take precedence)
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H02P11/00 0 Arrangements for controlling dynamo-electric converters (starting H02P1/00; stopping or slowing H02P3/00; vector control H02P21/00; feeding a network in conjunction with a generator or another converter H02J)
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H02P11/04 1 for controlling dynamo-electric converters having a dc output
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H02P11/06 1 for controlling dynamo-electric converters having an ac output
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H02P13/00 0 Arrangements for controlling transformers, reactors or choke coils, for the purpose of obtaining a desired output (regulation systems using transformers, reactors or choke coils G05F; transformers H01F; feeding a network in conjunction with a generator or a converter H02J; control or regulation of converters H02M)
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H02P13/06 1 by tap-changing; by rearranging interconnections of windings
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H02P13/08 1 by sliding current collector along winding
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H02P13/10 1 by moving core, coil winding, or shield, e.g. by induction regulator
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H02P13/12 1 by varying magnetic bias
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H02P15/00 0 Arrangements for controlling dynamo-electric brakes or clutches (controlling speed of dynamo-electric motors by means of a separate brake H02P29/04, vector control H02P21/00 {see provisionally also H02K49/00 and H02P29/0022})
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H02P15/02 1 Conjoint control of brakes and clutches
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H02P17/00 0 Arrangements for controlling dynamo-electric gears (vector control H02P21/00)
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H02P21/00 0 Arrangements or methods for the control of electric machines by vector control, e.g. by control of field orientation
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H02P21/0003 1 {Control strategies in general, e.g. linear type, e.g. P, PI, PID, using robust control}
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H02P21/0007 2 {using sliding mode control}
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H02P21/001 2 {using fuzzy control}
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H02P21/0014 2 {using neural networks}
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H02P21/0017 2 {Model reference adaptation, e.g. MRAS or MRAC, useful for control or parameter estimation}
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H02P21/0021 2 {using different modes of control depending on a parameter, e.g. the speed}
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H02P21/0025 2 {implementing a off line learning phase to determine and store useful data for on-line control}
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H02P21/0085 1 {specially adapted for high speeds, e.g. above nominal speed}
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H02P21/0089 2 {using field weakening}
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H02P21/02 1 specially adapted for optimising the efficiency at low load
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H02P21/04 1 specially adapted for very low speeds
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H02P21/05 1 specially adapted for damping motor oscillations, e.g. for reducing hunting
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H02P21/06 1 Rotor flux based control involving the use of rotor position or rotor speed sensors
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H02P21/08 2 Indirect field-oriented control; Rotor flux feed-forward control
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H02P21/09 3 Field phase angle calculation based on rotor voltage equation by adding slip frequency and speed proportional frequency
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H02P21/10 2 Direct field-oriented control; Rotor flux feed-back control
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H02P21/12 1 Stator flux based control involving the use of rotor position or rotor speed sensors
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H02P21/13 1 Observer control, e.g. using Luenberger observers or Kalman filters
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H02P21/14 1 Estimation or adaptation of machine parameters, e.g. flux, current or voltage
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H02P21/141 2 {Flux estimation}
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H02P21/143 2 {Inertia or moment of inertia estimation}
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H02P21/16 2 Estimation of constants, e.g. the rotor time constant
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H02P21/18 2 Estimation of position or speed
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H02P21/20 2 Estimation of torque
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H02P21/22 1 Current control, e.g. using a current control loop
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H02P21/24 1 Vector control not involving the use of rotor position or rotor speed sensors
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H02P21/26 2 Rotor flux based control
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H02P21/28 2 Stator flux based control
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H02P21/30 3 Direct torque control [DTC] or field acceleration method [FAM]
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H02P21/32 2 Determining the initial rotor position (H02P21/34 takes precedence)
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H02P21/34 1 Arrangements for starting
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H02P21/36 1 Arrangements for braking or slowing; Four quadrant control
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H02P21/50 1 {Vector control arrangements or methods not otherwise provided for in H02P21/00- H02P21/36}
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H02P23/00 0 Arrangements or methods for the control of AC motors characterised by a control method other than vector control
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H02P23/0004 1 {Control strategies in general, e.g. linear type, e.g. P, PI, PID, using robust control}
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H02P23/0009 2 {using sliding mode control}
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H02P23/0013 2 {using fuzzy control}
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H02P23/0018 2 {using neural networks}
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H02P23/0022 2 {Model reference adaptation, e.g. MRAS or MRAC, useful for control or parameter estimation}
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H02P23/0027 2 {using different modes of control depending on a parameter, e.g. the speed}
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H02P23/0031 2 {implementing a off line learning phase to determine and store useful data for on-line control}
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H02P23/0077 1 {Characterised by the use of a particular software algorithm}
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H02P23/0086 1 {specially adapted for high speeds, e.g. above nominal speed}
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H02P23/009 2 {using field weakening}
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H02P23/02 1 specially adapted for optimising the efficiency at low load
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H02P23/03 1 specially adapted for very low speeds
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H02P23/04 1 specially adapted for damping motor oscillations, e.g. for reducing hunting
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H02P23/06 1 Controlling the motor in four quadrants
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H02P23/07 2 Polyphase or monophase asynchronous induction motors
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H02P23/08 1 Controlling based on slip frequency, e.g. adding slip frequency and speed proportional frequency
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H02P23/10 1 Controlling by adding a dc current (dc current braking H02P3/24)
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H02P23/12 1 Observer control, e.g. using Luenberger observers or Kalman filters
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H02P23/14 1 Estimation or adaptation of motor parameters, e.g. rotor time constant, flux, speed, current or voltage
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H02P23/16 1 Controlling the angular speed of one shaft (H02P23/18 takes precedence)
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H02P23/18 1 Controlling the angular speed together with angular position or phase
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H02P23/183 2 {of one shaft without controlling the prime mover}
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H02P23/186 2 {of one shaft by controlling the prime mover}
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H02P23/20 1 Controlling the acceleration or deceleration
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H02P23/22 1 Controlling the speed digitally using a reference oscillator, a speed proportional pulse rate feedback and a digital comparator
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H02P23/24 1 Controlling the direction, e.g. clockwise or counterclockwise
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H02P23/26 1 Power factor control [PFC]
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H02P23/28 1 Controlling the motor by varying the switching frequency of switches connected to a DC supply and the motor phases
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H02P23/30 1 Direct torque control [DTC] or field acceleration method [FAM]
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H02P25/00 0 Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details
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H02P25/02 1 characterised by the kind of motor
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H02P25/022 2 Synchronous motors (H02P25/064 takes precedence)
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H02P25/024 3 controlled by supply frequency
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H02P25/026 4 thereby detecting the rotor position
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H02P25/028 3 with four quadrant control
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H02P25/03 3 with brushless excitation
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H02P25/032 2 Reciprocating, oscillating or vibrating motors
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H02P25/034 3 Voice coil motors (voice coil motors driven by DC power H02P7/025)
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H02P25/04 2 Single phase motors, e.g. capacitor motors
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H02P25/06 2 Linear motors
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H02P25/062 3 of the induction type
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H02P25/064 3 of the synchronous type
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H02P25/066 4 of the stepping type
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H02P25/08 2 Reluctance motors
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H02P25/0805 3 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P25/083 3 Arrangements for increasing the switching speed from one coil to the next one
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H02P25/086 3 Commutation
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H02P25/089 4 Sensorless control (direct torque control H02P23/30)
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H02P25/092 3 Converters specially adapted for controlling reluctance motors
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H02P25/0925 4 {wherein the converter comprises only one switch per phase}
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H02P25/098 3 Arrangements for reducing torque ripple
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H02P25/10 2 Commutator motors, e.g. repulsion motors
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H02P25/102 3 {Repulsion motors}
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H02P25/105 3 {Four quadrant control}
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H02P25/107 3 {Polyphase or monophase commutator motors}
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H02P25/12 3 with shiftable brushes
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H02P25/14 3 Universal motors (H02P25/12 takes precedence)
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H02P25/145 4 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value, speed feedback}
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H02P25/16 1 characterised by the circuit arrangement or by the kind of wiring
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H02P25/18 2 with arrangements for switching the windings, e.g. with mechanical switches or relays
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H02P25/182 3 {whereby the speed is regulated by using centrifucal devices, e.g. switch, resistor}
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H02P25/184 3 {wherein the motor speed is changed by switching from a delta to a star, e.g. wye, connection of its windings, or vice versa}
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H02P25/186 3 {whereby the speed is regulated by using a periodic interrupter (H02P25/30 takes precedence)}
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H02P25/188 3 {wherein the motor windings are switched from series to parallel or vice versa to control speed or torque}
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H02P25/20 3 for pole-changing
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H02P25/22 2 Multiple windings; Windings for more than three phases
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H02P25/24 2 Variable impedance in stator or rotor circuit
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H02P25/26 3 with arrangements for controlling secondary impedance
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H02P25/28 2 using magnetic devices with controllable degree of saturation, e.g. transductors
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H02P25/30 2 the motor being controlled by a control effected upon an ac generator supplying it
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H02P25/32 2 using discharge tubes
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H02P25/325 3 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P27/00 0 Arrangements or methods for the control of AC motors characterised by the kind of supply voltage (of two or more motors H02P5/00; of synchronous motors with electronic commutators H02P6/00; of DC motors H02P7/00; of stepping motors H02P8/00)
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H02P27/02 1 using supply voltage with constant frequency and variable amplitude
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H02P27/024 2 using AC supply for only the rotor circuit or only the stator circuit
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H02P27/026 2 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P27/04 1 using variable-frequency supply voltage, e.g. inverter or converter supply voltage
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H02P27/045 2 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P27/047 2 {V/F converter, wherein the voltage is controlled proportionally with the frequency}
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H02P27/048 2 using AC supply for only the rotor circuit or only the stator circuit
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H02P27/05 2 using AC supply for both the rotor and the stator circuits, the frequency of supply to at least one circuit being variable
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H02P27/06 2 using dc to ac converters or inverters (H02P27/05 takes precedence)
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H02P27/08 3 with pulse width modulation
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H02P27/085 4 {wherein the PWM mode is adapted on the running conditions of the motor, e.g. the switching frequency}
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H02P27/10 4 using bang-bang controllers
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H02P27/12 4 pulsing by guiding the flux vector, current vector or voltage vector on a circle or a closed curve, e.g. for direct torque control
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H02P27/14 4 with three or more levels of voltage
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H02P27/16 2 using ac to ac converters without intermediate conversion to dc (H02P27/05 takes precedence)
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H02P27/18 3 varying the frequency by omitting half waves
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H02P29/00 0 Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors (arrangements for starting electric motors H02P1/00; arrangements for stopping or slowing electric motors H02P3/00; control of motors that can be connected to two or more different electric power supplies H02P4/00; regulating or controlling the speed or torque of two or more electric motors H02P5/00; vector control H02P21/00)
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H02P29/0016 1 {Control of angular speed of one shaft without controlling the prime mover}
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H02P29/0022 2 {Controlling a brake between the prime mover and the load}
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H02P29/0027 2 {Controlling a clutch between the prime mover and the load}
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H02P29/02 1 Providing protection against overload without automatic interruption of supply (protection against faults of stepper motors H02P8/36)
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H02P29/024 2 Detecting a fault condition, e.g. short circuit, locked rotor, open circuit or loss of load
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H02P29/0241 3 {the fault being an overvoltage}
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H02P29/0243 3 {the fault being a broken phase}
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H02P29/025 3 {the fault being a power interruption}
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H02P29/026 3 {the fault being a power fluctuation}
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H02P29/027 3 {the fault being an over-current}
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H02P29/028 3 the motor continuing operation despite the fault condition, e.g. eliminating, compensating for or remedying the fault
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H02P29/032 2 Preventing damage to the motor, e.g. setting individual current limits for different drive conditions
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H02P29/04 1 by means of a separate brake
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H02P29/045 2 {whereby the speed is regulated by measuring the motor speed and comparing it with a given physical value}
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H02P29/10 1 for preventing overspeed or under speed
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H02P29/20 1 for controlling one motor used for different sequential operations
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H02P29/40 1 Regulating or controlling the amount of current drawn or delivered by the motor for controlling the mechanical load
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H02P29/50 1 Reduction of harmonics
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H02P29/60 1 Controlling or determining the temperature of the motor or of the drive (H02P29/02 takes precedence)
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H02P29/62 2 for raising the temperature of the motor
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H02P29/64 2 Controlling or determining the temperature of the winding
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H02P29/66 2 Controlling or determining the temperature of the rotor
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H02P29/662 3 {the rotor having permanent magnets (H02P29/67 takes precedence)}
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H02P29/664 3 {the rotor having windings}
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H02P29/666 4 {by rotor current detection}
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H02P29/67 2 {Controlling or determining the motor temperature by back electromotive force [back-EMF] evaluation}
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H02P29/68 2 based on the temperature of a drive component or a semiconductor component
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H02P29/685 3 {compensating for Hall sensor temperature non-linearity}
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H02P31/00 0 Arrangements for regulating or controlling electric motors not provided for in groups H02P1/00 - H02P5/00, H02P7/00 or H02P21/00 - H02P29/00
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H02P2101/00 0 Special adaptation of control arrangements for generators
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H02P2101/10 1 for water-driven turbines
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H02P2101/15 1 for wind-driven turbines
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H02P2101/20 1 for steam-driven turbines
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H02P2101/25 1 for combustion engines
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H02P2101/30 1 for aircraft
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H02P2101/35 1 for ships
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H02P2101/40 1 for railway vehicles
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H02P2101/45 1 for motor vehicles, e.g. car alternators
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H02P2103/00 0 Controlling arrangements characterised by the type of generator
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H02P2103/10 1 of the asynchronous type
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H02P2103/20 1 of the synchronous type
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H02P2201/00 0 Indexing scheme relating to controlling arrangements characterised by the converter used
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H02P2201/01 1 AC-AC converter stage controlled to provide a defined AC voltage
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H02P2201/03 1 AC-DC converter stage controlled to provide a defined DC link voltage (general aspects of plural converters in cascade H02M)
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H02P2201/05 1 Capacitive half bridge, i.e. resonant inverter having two capacitors and two switches
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H02P2201/07 1 DC-DC step-up or step-down converter inserted between the power supply and the inverter supplying the motor, e.g. to control voltage source fluctuations, to vary the motor speed (general aspects of plural converters in cascade H02M)
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H02P2201/09 1 Boost converter, i.e. DC-DC step up converter increasing the voltage between the supply and the inverter driving the motor (general aspects of plural converters in cascade H02M)
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H02P2201/11 1 Buck converter, i.e. DC-DC step down converter decreasing the voltage between the supply and the inverter driving the motor (general aspects of plural converters in cascade H02M)
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H02P2201/13 1 DC-link of current link type, e.g. typically for thyristor bridges, having an inductor in series with rectifier
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H02P2201/15 1 Power factor Correction [PFC] circuit generating the DC link voltage for motor driving inverter (motor power factor control H02P23/26)
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H02P2203/00 0 Indexing scheme relating to controlling arrangements characterised by the means for detecting the position of the rotor
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H02P2203/01 1 Motor rotor position determination based on the detected or calculated phase inductance, e.g. for a Switched Reluctance Motor
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H02P2203/03 1 Determination of the rotor position, e.g. initial rotor position, during standstill or low speed operation
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H02P2203/05 1 Determination of the rotor position by using two different methods and/or motor models
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H02P2203/07 1 Motor variable determination based on the ON-resistance of a power switch, i.e. the voltage across the switch is measured during the ON state of the switch and used to determine the current in the motor and to calculate the speed
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H02P2203/09 1 Motor speed determination based on the current and/or voltage without using a tachogenerator or a physical encoder
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H02P2203/11 1 Determination or estimation of the rotor position or other motor parameters based on the analysis of high frequency signals (position detection of motors with electronic commutators in dependence of the position H02P6/185)
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H02P2205/00 0 Indexing scheme relating to controlling arrangements characterised by the control loops
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H02P2205/01 1 Current loop, i.e. comparison of the motor current with a current reference
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H02P2205/03 1 Power loop, i.e. comparison of the motor power with a power reference
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H02P2205/05 1 Torque loop, i.e. comparison of the motor torque with a torque reference
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H02P2205/07 1 Speed loop, i.e. comparison of the motor speed with a speed reference
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H02P2207/00 0 Indexing scheme relating to controlling arrangements characterised by the type of motor
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H02P2207/01 1 Asynchronous machines
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H02P2207/03 1 Double rotor motors or generators, i.e. electromagnetic transmissions having double rotor with motor and generator functions, e.g. for electrical variable transmission
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H02P2207/05 1 Synchronous machines, e.g. with permanent magnets or DC excitation
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H02P2207/055 2 Surface mounted magnet motors
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H02P2207/07 1 Doubly fed machines receiving two supplies both on the stator only wherein the power supply is fed to different sets of stator windings or to rotor and stator windings
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H02P2207/073 2 wherein only one converter is used, the other windings being supplied without converter, e.g. doubly-fed induction machines
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H02P2207/076 2 wherein both supplies are made via converters: especially doubly-fed induction machines; e.g. for starting
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H02P2209/00 0 Indexing scheme relating to controlling arrangements characterised by the waveform of the supplied voltage or current
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H02P2209/01 1 Motors with neutral point connected to the power supply
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H02P2209/03 1 Motors with neutral point disassociated, i.e. the windings ends are not connected directly to a common point
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H02P2209/05 1 Polyphase motors supplied from a single-phase power supply or a DC power supply
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H02P2209/07 1 Trapezoidal waveform
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H02P2209/09 1 PWM with fixed limited number of pulses per period
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H02P2209/095 2 One pulse per half period
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H02P2209/11 1 Sinusoidal waveform
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H02P2209/13 1 Different type of waveforms depending on the mode of operation
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H02S GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H01L31/00; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00)
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H02S10/00 0 PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
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H02S10/10 1 including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems (combinations with gas-turbine plants F02C6/00)
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H02S10/12 2 Hybrid wind-PV energy systems
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H02S10/20 1 Systems characterised by their energy storage means (H02S40/38 takes precedence)
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H02S10/30 1 Thermophotovoltaic systems (photovoltaic cells specially adapted for conversion or sensing of infra-red [IR] radiation H01L31/00; thermoelectric devices H10N10/00)
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H02S10/40 1 Mobile PV generator systems
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H02S20/00 0 Supporting structures for PV modules
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H02S20/10 1 Supporting structures directly fixed to the ground (H02S20/30 takes precedence)
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H02S20/20 1 Supporting structures directly fixed to an immovable object (H02S20/30 takes precedence)
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H02S20/21 2 specially adapted for motorways, e.g. integrated with sound barriers
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H02S20/22 2 specially adapted for buildings
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H02S20/23 3 specially adapted for roof structures
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H02S20/24 4 specially adapted for flat roofs
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H02S20/25 4 Roof tile elements
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H02S20/26 3 Building materials integrated with PV modules, e.g. façade elements (H02S20/25 takes precedence)
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H02S20/30 1 Supporting structures being movable or adjustable, e.g. for angle adjustment
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H02S20/32 2 specially adapted for solar tracking
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H02S30/00 0 Structural details of PV modules other than those related to light conversion (semiconductor device aspects of modules of electrolytic light sensitive devices H01G9/20, of inorganic PV modules H01L31/00, of organic PV modules H10K30/00)
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H02S30/10 1 Frame structures
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H02S30/20 1 Collapsible or foldable PV modules
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H02S40/00 0 Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
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H02S40/10 1 Cleaning arrangements
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H02S40/12 2 Means for removing snow
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H02S40/20 1 Optical components
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H02S40/22 2 Light-reflecting or light-concentrating means (directly associated with the PV cell or integrated with the PV cell H01L31/054)
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H02S40/30 1 Electrical components
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H02S40/32 2 comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
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H02S40/34 2 comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
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H02S40/345 3 {with cooling means associated with the electrical connection means, e.g. cooling means associated with or applied to the junction box (cooling means for PV cells H01L31/052, for PV modules H02S40/42)}
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H02S40/36 2 characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
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H02S40/38 2 Energy storage means, e.g. batteries, structurally associated with PV modules
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H02S40/40 1 Thermal components (H02S10/30 takes precedence)
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H02S40/42 2 Cooling means (cooling means directly associated or integrated with the PV cell H01L31/052)
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H02S40/425 3 {using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation}
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H02S40/44 2 Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time (directly associated with the PV cell or integrated with the PV cell H01L31/0525)
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H02S50/00 0 Monitoring or testing of PV systems, e.g. load balancing or fault identification
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H02S50/10 1 Testing of PV devices, e.g. of PV modules or single PV cells (testing of semiconductor devices during manufacturing {H01L22/00})
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H02S50/15 2 using optical means, e.g. using electroluminescence
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H02S99/00 0 Subject matter not provided for in other groups of this subclass
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H03 ELECTRONIC CIRCUITRY
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H03B GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (measuring, testing G01R; generators adapted for electrophonic musical instruments G10H; Speech synthesis G10L; masers, lasers H01S; dynamo-electric machines H02K; power inverter circuits H02M; by using pulse techniques H03K; automatic control of generators H03L; starting, synchronisation or stabilisation of generators where the type of generator is irrelevant or unspecified H03L; generation of oscillations in plasma H05H)
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H03B1/00 0 Details
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H03B1/02 1 Structural details of power oscillators, e.g. for heating {(construction of transmitters H04B; features of generators for heating by electromagnetic fields H05B6/00)}
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H03B1/04 1 Reducing undesired oscillations, e.g. harmonics
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H03B5/00 0 Generation of oscillations using amplifier with regenerative feedback from output to input (H03B9/00, H03B15/00 take precedence)
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H03B5/02 1 Details
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H03B5/04 2 Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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H03B5/06 2 Modifications of generator to ensure starting of oscillations
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H03B5/08 1 with frequency-determining element comprising lumped inductance and capacitance
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H03B5/10 2 active element in amplifier being vacuum tube (H03B5/14 takes precedence)
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H03B5/12 2 active element in amplifier being semiconductor device (H03B5/14 takes precedence)
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H03B5/1203 3 {the amplifier being a single transistor}
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H03B5/1206 3 {using multiple transistors for amplification}
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H03B5/1209 4 {the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair. (H03B5/1215 takes precedence)}
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H03B5/1212 4 {the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair}
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H03B5/1215 5 {the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair}
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H03B5/1218 4 {the generator being of the balanced type}
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H03B5/1221 4 {the amplifier comprising multiple amplification stages connected in cascade}
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H03B5/1225 4 {the generator comprising multiple amplifiers connected in parallel}
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H03B5/1228 3 {the amplifier comprising one or more field effect transistors}
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H03B5/1231 3 {the amplifier comprising one or more bipolar transistors}
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H03B5/1234 3 {and comprising means for varying the output amplitude of the generator (H03B5/1278 takes precedence)}
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H03B5/1237 3 {comprising means for varying the frequency of the generator}
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H03B5/124 4 {the means comprising a voltage dependent capacitance}
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H03B5/1243 5 {the means comprising voltage variable capacitance diodes}
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H03B5/1246 5 {the means comprising transistors used to provide a variable capacitance}
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H03B5/125 6 {the transistors being bipolar transistors}
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H03B5/1253 6 {the transistors being field-effect transistors}
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H03B5/1256 4 {the means comprising a variable inductance}
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H03B5/1259 5 {the means comprising a variable active inductor, e.g. gyrator circuits}
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H03B5/1262 4 {the means comprising switched elements}
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H03B5/1265 5 {switched capacitors}
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H03B5/1268 5 {switched inductors}
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H03B5/1271 4 {the frequency being controlled by a control current, i.e. current controlled oscillators}
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H03B5/1275 4 {having further means for varying a parameter in dependence on the frequency}
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H03B5/1278 5 {the parameter being an amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range}
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H03B5/1281 5 {the parameter being the amount of feedback}
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H03B5/1284 5 {the parameter being another frequency, e.g. a harmonic of the oscillating frequency}
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H03B5/1287 5 {the parameter being a quality factor, e.g. Q factor of the frequency determining element}
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H03B5/129 5 {the parameter being a bias voltage or a power supply}
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H03B5/1293 4 {having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range}
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H03B5/1296 3 {the feedback circuit comprising a transformer}
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H03B5/14 2 frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted
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H03B5/16 3 active element in amplifier being vacuum tube
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H03B5/18 1 with frequency-determining element comprising distributed inductance and capacitance
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H03B5/1805 2 {the frequency-determining element being a coaxial resonator}
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H03B5/1811 3 {the active element in the amplifier being a vacuum tube (see provisionally also H03B5/1835)}
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H03B5/1817 2 {the frequency-determining element being a cavity resonator}
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H03B5/1823 3 {the active element in the amplifier being a semiconductor device}
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H03B5/1829 4 {the semiconductor device being a field-effect device}
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H03B5/1835 3 {the active element in the amplifier being a vacuum tube}
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H03B5/1841 2 {the frequency-determining element being a strip line resonator (H03B5/1805, H03B5/1817, H03B5/1864 and H03B5/1882 take precedence)}
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H03B5/1847 3 {the active element in the amplifier being a semiconductor device}
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H03B5/1852 4 {the semiconductor device being a field-effect device}
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H03B5/1858 3 {the active element in the amplifier being a vacuum tube (see provisionally also H03B5/1835)}
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H03B5/1864 2 {the frequency-determining element being a dielectric resonator}
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H03B5/187 3 {the active element in the amplifier being a semiconductor device}
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H03B5/1876 4 {the semiconductor device being a field-effect device}
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H03B5/1882 2 {the frequency-determining element being a magnetic-field sensitive resonator, e.g. a Yttrium Iron Garnet or a magnetostatic surface wave resonator}
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H03B5/1888 3 {the active element in the amplifier being a semiconductor device}
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H03B5/1894 4 {the semiconductor device being a field-effect device}
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H03B5/20 1 with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
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H03B5/22 2 active element in amplifier being vacuum tube (H03B5/26 takes precedence)
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H03B5/24 2 active element in amplifier being semiconductor device (H03B5/26 takes precedence)
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H03B5/26 2 frequency-determining element being part of bridge circuit in closed ring around which signal is transmitted; frequency-determining element being connected via a bridge circuit to such a closed ring, e.g. Wien-Bridge oscillator, parallel-T oscillator
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H03B5/28 3 active element in amplifier being vacuum tube
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H03B5/30 1 with frequency-determining element being electromechanical resonator
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H03B5/32 2 being a piezo-electric resonator (selection of piezo-electric material H10N30/00)
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H03B5/323 3 {the resonator having more than two terminals (H03B5/326 takes precedence)}
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H03B5/326 3 {the resonator being an acoustic wave device, e.g. SAW or BAW device}
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H03B5/34 3 active element in amplifier being vacuum tube (H03B5/38 takes precedence)
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H03B5/36 3 active element in amplifier being semiconductor device ({H03B5/323, H03B5/326} , H03B5/38 take precedence)
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H03B5/362 4 {the amplifier being a single transistor (H03B5/364 - H03B5/368 take precedence)}
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H03B5/364 4 {the amplifier comprising field effect transistors (H03B5/366 takes precedence)}
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H03B5/366 4 {and comprising means for varying the frequency by a variable voltage or current}
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H03B5/368 5 {the means being voltage variable capacitance diodes}
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H03B5/38 3 frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted
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H03B5/40 2 being a magnetostrictive resonator (H03B5/42 takes precedence; selection of magneto-strictive material {H01F1/00}; H10N30/00)
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H03B5/42 2 frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted
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H03B7/00 0 Generation of oscillations using active element having a negative resistance between two of its electrodes (H03B9/00 takes precedence)
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H03B7/02 1 with frequency-determining element comprising lumped inductance and capacitance
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H03B7/04 2 active element being vacuum tube
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H03B7/06 2 active element being semiconductor device
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H03B7/08 3 being a tunnel diode
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H03B7/10 2 active element being gas-discharge or arc-discharge tube
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H03B7/12 1 with frequency-determining element comprising distributed inductance and capacitance
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H03B7/14 2 active element being semiconductor device
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H03B7/143 3 {and which comprises an element depending on a voltage or a magnetic field, e.g. varactor- YIG}
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H03B7/146 3 {with several semiconductor devices}
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H03B9/00 0 Generation of oscillations using transit-time effects {(construction of tube and circuit arrangements not adapted to a particular application H01J; construction of the semiconductor devices H01L)}
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H03B9/01 1 using discharge tubes
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H03B9/02 2 using a retarding-field tube (using klystrons H03B9/04)
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H03B9/04 2 using a klystron
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H03B9/06 3 using a reflex klystron
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H03B9/08 2 using a travelling-wave tube
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H03B9/10 2 using a magnetron
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H03B9/12 1 using solid state devices, e.g. Gunn-effect devices
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H03B2009/123 2 {using Gunn diodes}
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H03B2009/126 2 {using impact ionization avalanche transit time [IMPATT] diodes}
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H03B9/14 2 and elements comprising distributed inductance and capacitance
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H03B9/141 3 {and comprising a voltage sensitive element, e.g. varactor}
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H03B9/142 3 {and comprising a magnetic field sensitive element, e.g. YIG}
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H03B9/143 3 {using more than one solid state device}
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H03B9/145 3 {the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity (H03B9/141 - H03B9/143, H03B9/147, H03B9/148 take precedence)}
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H03B9/146 4 {formed by a disc, e.g. a waveguide cap resonator}
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H03B9/147 3 {the frequency being determined by a stripline resonator (H03B9/141 - H03B9/143, H03B9/148 take precedence)}
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H03B9/148 3 {the frequency being determined by a dielectric resonator (H03B9/141 - H03B9/143 take precedence)}
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H03B11/00 0 Generation of oscillations using a shock-excited tuned circuit (with feedback H03B5/00)
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H03B11/02 1 excited by spark (spark gaps therefor H01T9/00)
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H03B11/04 1 excited by interrupter
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H03B11/06 2 by mechanical interrupter
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H03B11/08 2 interrupter being discharge tube
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H03B11/10 2 interrupter being semiconductor device
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H03B13/00 0 Generation of oscillations using deflection of electron beam in a cathode-ray tube
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H03B15/00 0 Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
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H03B15/003 1 {using superconductivity effects (devices using superconductivity H10N60/00)}
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H03B15/006 1 {using spin transfer effects or giant magnetoresistance}
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H03B17/00 0 Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
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H03B19/00 0 Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source (transference of modulation from one carrier to another H03D7/00)
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H03B19/03 1 using non-linear inductance
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H03B19/05 1 using non-linear capacitance, e.g. varactor diodes
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H03B19/06 1 by means of discharge device or semiconductor device with more than two electrodes
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H03B19/08 2 by means of a discharge device
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H03B19/10 3 using multiplication only
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H03B19/12 3 using division only
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H03B19/14 2 by means of a semiconductor device
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H03B19/16 1 using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
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H03B19/18 2 and elements comprising distributed inductance and capacitance
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H03B19/20 2 being diodes exhibiting charge storage or enhancement effects
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H03B21/00 0 Generation of oscillations by combining unmodulated signals of different frequencies (H03B19/00 takes precedence; frequency changing circuits in general H03D)
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H03B21/01 1 by beating unmodulated signals of different frequencies
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H03B21/02 2 by plural beating, i.e. for frequency synthesis {; Beating in combination with multiplication or division of frequency (digital frequency synthesis using a ROM G06F1/02; digital frequency synthesis in general H03K; indirect frequency synthesis using a PLL H03L7/16)}
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H03B21/025 3 {by repeated mixing in combination with division of frequency only}
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H03B21/04 2 using several similar stages
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H03B23/00 0 Generation of oscillations periodically swept over a predetermined frequency range (angle-modulating circuits in general H03C3/00)
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H03B25/00 0 Simultaneous generation by a free-running oscillator of oscillations having different frequencies
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H03B27/00 0 Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
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H03B28/00 0 Generation of oscillations by methods not covered by groups H03B5/00 - H03B27/00, including modification of the waveform to produce sinusoidal oscillations (analogue function generators for performing computing operations G06G7/26; use of transformers for conversion of waveform in ac-ac converters H02M5/18)
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H03B29/00 0 Generation of noise currents and voltages {(gasfilled discharge tubes with solid cathode specially adapted as noise generators H01J17/005)}
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H03B2200/00 0 Indexing scheme relating to details of oscillators covered by H03B
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H03B2200/0002 1 Types of oscillators
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H03B2200/0004 2 Butler oscillator
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H03B2200/0006 2 Clapp oscillator
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H03B2200/0008 2 Colpitts oscillator
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H03B2200/001 2 Hartley oscillator
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H03B2200/0012 2 Pierce oscillator
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H03B2200/0014 1 Structural aspects of oscillators
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H03B2200/0016 2 including a ring, disk or loop shaped resonator
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H03B2200/0018 2 relating to the cutting angle of a crystal, e.g. AT cut quartz
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H03B2200/002 2 making use of ceramic material
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H03B2200/0022 2 characterised by the substrate, e.g. material
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H03B2200/0024 2 including parallel striplines
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H03B2200/0026 2 relating to the pins of integrated circuits
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H03B2200/0028 2 based on a monolithic microwave integrated circuit [MMIC]
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H03B2200/003 1 Circuit elements of oscillators
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H03B2200/0032 2 including a device with a Schottky junction
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H03B2200/0034 2 including a buffer amplifier
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H03B2200/0036 2 including an emitter or source coupled transistor pair or a long tail pair
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H03B2200/0038 2 including a current mirror
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H03B2200/004 2 including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
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H03B2200/0042 3 the capacitance diode being in the feedback path
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H03B2200/0044 2 including optical elements, e.g. optical injection locking
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H03B2200/0046 2 including measures to switch the gain of an amplifier
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H03B2200/0048 2 including measures to switch the frequency band, e.g. by harmonic selection
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H03B2200/005 2 including measures to switch a capacitor
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H03B2200/0052 2 including measures to switch the feedback circuit
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H03B2200/0054 2 including measures to switch a filter, e.g. for frequency tuning or for harmonic selection
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H03B2200/0056 2 including a diode used for switching
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H03B2200/0058 2 with particular transconductance characteristics, e.g. an operational transconductance amplifier
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H03B2200/006 1 Functional aspects of oscillators
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H03B2200/0062 2 Bias and operating point
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H03B2200/0064 2 Pulse width, duty cycle or on/off ratio
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H03B2200/0066 2 Amplitude or AM detection
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H03B2200/0068 2 Frequency or FM detection
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H03B2200/007 2 Generation of oscillations based on harmonic frequencies, e.g. overtone oscillators
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H03B2200/0072 2 Frequency hopping and enabling of rapid frequency changes
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H03B2200/0074 2 Locking of an oscillator by injecting an input signal directly into the oscillator
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H03B2200/0076 2 Power combination of several oscillators oscillating at the same frequency
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H03B2200/0078 2 generating or using signals in quadrature
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H03B2200/008 2 making use of a reference frequency
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H03B2200/0082 2 Lowering the supply voltage and saving power
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H03B2200/0084 2 dedicated to Terahertz frequencies
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H03B2200/0086 2 relating to the Q factor or damping of the resonant circuit
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H03B2200/0088 2 Reduction of noise
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H03B2200/009 3 Reduction of phase noise
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H03B2200/0092 2 Measures to linearise or reduce distortion of oscillator characteristics
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H03B2200/0094 2 Measures to ensure starting of oscillations
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H03B2200/0096 2 Measures to ensure stopping of oscillations
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H03B2200/0098 2 having a balanced output signal
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H03B2201/00 0 Aspects of oscillators relating to varying the frequency of the oscillations
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H03B2201/01 1 Varying the frequency of the oscillations by manual means
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H03B2201/011 2 the means being an element with a variable capacitance
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H03B2201/012 2 the means being an element with a variable inductance
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H03B2201/014 2 the means being associated with an element comprising distributed inductances and capacitances
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H03B2201/015 3 the element being a cavity
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H03B2201/017 3 the element being a dielectric resonator
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H03B2201/018 2 the means being a manual switch
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H03B2201/02 1 Varying the frequency of the oscillations by electronic means
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H03B2201/0208 2 the means being an element with a variable capacitance, e.g. capacitance diode
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H03B2201/0216 2 the means being an element with a variable inductance
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H03B2201/0225 2 the means being associated with an element comprising distributed inductances and capacitances
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H03B2201/0233 3 the element being a cavity
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H03B2201/0241 3 the element being a magnetically variable element, e.g. an Yttrium Iron Garnet
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H03B2201/025 2 the means being an electronic switch for switching in or out oscillator elements
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H03B2201/0258 3 the means comprising a diode
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H03B2201/0266 3 the means comprising a transistor
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H03B2201/0275 2 the means delivering several selected voltages or currents
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H03B2201/0283 3 the means functioning digitally
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H03B2201/0291 4 and being controlled by a processing device, e.g. a microprocessor
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H03B2201/03 1 Varying beside the frequency also another parameter of the oscillator in dependence on the frequency
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H03B2201/031 2 the parameter being the amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range
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H03B2201/033 2 the parameter being the amount of feedback
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H03B2201/035 2 the parameter being another frequency, e.g. a harmonic of the oscillating frequency
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H03B2201/036 2 the parameter being the quality factor of a resonator
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H03B2201/038 2 the parameter being a bias voltage or a power supply
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H03B2202/00 0 Aspects of oscillators relating to reduction of undesired oscillations
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H03B2202/01 1 Reduction of undesired oscillations originated from distortion in one of the circuit elements of the oscillator
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H03B2202/012 2 the circuit element being the active device
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H03B2202/015 2 the circuit element being a limiter
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H03B2202/017 2 the circuit element being a frequency determining element
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H03B2202/02 1 Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator
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H03B2202/022 2 the noise being essentially white noise, i.e. frequency independent noise
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H03B2202/025 2 the noise being coloured noise, i.e. frequency dependent noise
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H03B2202/027 3 the noise being essentially proportional to the inverse of the frequency, i.e. the so-called 1/f noise
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H03B2202/03 1 Reduction of undesired oscillations originated from internal parasitic couplings, i.e. parasitic couplings within the oscillator itself
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H03B2202/04 1 Reduction of undesired oscillations originated from outside noise or interferences, e.g. from parasitic couplings with circuit elements outside the oscillator
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H03B2202/042 2 the circuit element belonging to the power supply
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H03B2202/044 2 the circuit element belonging to transmitter circuitry
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H03B2202/046 2 the circuit element belonging to receiver circuitry
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H03B2202/048 2 the circuit element being a frequency divider
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H03B2202/05 1 Reduction of undesired oscillations through filtering or through special resonator characteristics
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H03B2202/06 1 Reduction of undesired oscillations through modification of a bias voltage, e.g. selecting the operation point of an active device
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H03B2202/07 1 Reduction of undesired oscillations through a cancelling of the undesired oscillation
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H03B2202/073 2 by modifying the internal feedback of the oscillator
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H03B2202/076 2 by using a feedback loop external to the oscillator, e.g. the so-called noise degeneration
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H03B2202/08 1 Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator
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H03B2202/082 2 by avoiding coupling between these circuit elements
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H03B2202/084 3 through shielding
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H03B2202/086 3 through a frequency dependent coupling, e.g. which attenuates a certain frequency range
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H03B2202/088 2 by compensating through additional couplings with these circuit elements
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H03C MODULATION (masers or lasers H01S; coding, decoding or code conversion H03M)
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H03C1/00 0 Amplitude modulation (H03C5/00, H03C7/00 take precedence)
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H03C1/02 1 Details
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H03C1/04 2 Means in or combined with modulating stage for reducing angle modulation
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H03C1/06 2 Modifications of modulator to reduce distortion, e.g. by feedback, and clearly applicable to more than one type of modulator
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H03C1/08 1 by means of variable impedance element (H03C1/28 - H03C1/34, H03C1/46 - H03C1/52, H03C1/62 take precedence)
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H03C1/10 2 the element being a current-dependent inductor
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H03C1/12 2 the element being a voltage-dependent capacitor
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H03C1/14 2 the element being a diode
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H03C1/16 1 by means of discharge device having at least three electrodes (H03C1/28 - H03C1/34, H03C1/50, H03C1/52, H03C1/62 take precedence)
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H03C1/18 2 carrier applied to control grid
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H03C1/20 3 modulating signal applied to anode
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H03C1/22 3 modulating signal applied to same grid
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H03C1/24 3 modulating signal applied to different grid
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H03C1/26 3 modulating signal applied to cathode
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H03C1/28 1 by means of transit-time tube
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H03C1/30 2 by means of a magnetron
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H03C1/32 1 by deflection of electron beam in discharge tube
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H03C1/34 1 by means of light-sensitive element
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H03C1/36 1 by means of semiconductor device having at least three electrodes (H03C1/34, H03C1/50, H03C1/52, H03C1/62 take precedence)
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H03C1/46 1 Modulators with mechanically-driven or acoustically-driven parts
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H03C1/48 1 by means of Hall-effect devices
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H03C1/50 1 by converting angle modulation to amplitude modulation (H03C1/28 - H03C1/34, H03C1/46, H03C1/48 take precedence)
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H03C1/52 1 Modulators in which carrier or one sideband is wholly or partially suppressed (H03C1/28 - H03C1/34, H03C1/46, H03C1/48 take precedence)
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H03C1/54 2 Balanced modulators, e.g. bridge type, ring type or double balanced type
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H03C1/542 3 {comprising semiconductor devices with at least three electrodes}
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H03C1/545 4 {using bipolar transistors}
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H03C1/547 4 {using field-effect transistors}
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H03C1/56 3 comprising variable two-pole elements only
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H03C1/58 4 comprising diodes
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H03C1/60 2 with one sideband wholly or partially suppressed
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H03C1/62 1 Modulators in which amplitude of carrier component in output is dependent upon strength of modulating signal, e.g. no carrier output when no modulating signal is present (H03C1/28 - H03C1/34, H03C1/46, H03C1/48 take precedence)
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H03C3/00 0 Angle modulation (H03C5/00, H03C7/00 take precedence)
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H03C3/005 1 {Circuits for asymmetric modulation}
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H03C3/02 1 Details
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H03C3/04 2 Means in or combined with modulating stage for reducing amplitude modulation
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H03C3/06 2 Means for changing frequency deviation
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H03C3/08 2 Modifications of modulator to linearise modulation, e.g. by feedback, and clearly applicable to more than one type of modulator
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H03C3/09 2 Modifications of modulator for regulating the mean frequency
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H03C3/0908 3 {using a phase locked loop}
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H03C3/0916 4 {with frequency divider or counter in the loop}
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H03C3/0925 5 {applying frequency modulation at the divider in the feedback loop}
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H03C3/0933 5 {using fractional frequency division in the feedback loop of the phase locked loop}
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H03C3/0941 4 {applying frequency modulation at more than one point in the loop}
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H03C3/095 4 {applying frequency modulation to the loop in front of the voltage controlled oscillator}
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H03C3/0958 4 {applying frequency modulation by varying the characteristics of the voltage controlled oscillator}
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H03C3/0966 4 {modulating the reference clock}
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H03C3/0975 4 {applying frequency modulation in the phase locked loop at components other than the divider, the voltage controlled oscillator or the reference clock}
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H03C3/0983 4 {containing in the loop a mixer other than for phase detection}
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H03C3/0991 4 {including calibration means or calibration methods}
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H03C3/10 1 by means of variable impedance (H03C3/30 - H03C3/38 take precedence)
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H03C3/12 2 by means of a variable reactive element
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H03C3/14 3 simulated by circuit comprising active element with at least three electrodes, e.g. reactance-tube circuit
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H03C3/145 4 {by using semiconductor elements}
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H03C3/16 4 in which the active element simultaneously serves as the active element of an oscillator
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H03C3/18 3 the element being a current-dependent inductor
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H03C3/20 3 the element being a voltage-dependent capacitor
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H03C3/22 3 the element being a semiconductor diode, e.g. varicap diode
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H03C3/222 4 {using bipolar transistors (H03C3/227 takes precedence)}
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H03C3/225 4 {using field effect transistors (H03C3/227 takes precedence)}
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H03C3/227 4 {using a combination of bipolar transistors and field effect transistors}
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H03C3/24 2 by means of a variable resistive element, e.g. tube
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H03C3/245 3 {by using semiconductor elements}
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H03C3/26 3 comprising two elements controlled in push-pull by modulating signal
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H03C3/28 2 using variable impedance driven mechanically or acoustically
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H03C3/30 1 by means of transit-time tube
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H03C3/32 2 the tube being a magnetron
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H03C3/34 1 by deflection of electron beam in discharge tube
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H03C3/36 1 by means of light-sensitive element
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H03C3/38 1 by converting amplitude modulation to angle modulation
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H03C3/40 2 using two signal paths the outputs of which have a predetermined phase difference and at least one output being amplitude-modulated
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H03C3/403 3 {using two quadrature frequency conversion stages in cascade}
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H03C3/406 3 {using a feedback loop containing mixers or demodulators}
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H03C3/42 1 by means of electromechanical devices (H03C3/28 takes precedence)
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H03C5/00 0 Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal (H03C7/00 takes precedence)
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H03C5/02 1 by means of transit-time tube
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H03C5/04 2 the tube being a magnetron
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H03C5/06 1 by deflection of electron beam in discharge tube
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H03C7/00 0 Modulating electromagnetic waves (devices or arrangements for the modulation of light G02F1/00)
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H03C7/02 1 in transmission lines, waveguides, cavity resonators or radiation fields of antennas
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H03C7/022 2 {using ferromagnetic devices, e.g. ferrites}
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H03C7/025 2 {using semiconductor devices}
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H03C7/027 3 {using diodes}
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H03C7/04 2 Polarisation of transmitted wave being modulated {(H03C7/022 takes precedence)}
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H03C99/00 0 Subject matter not provided for in other groups of this subclass
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H03C2200/00 0 Indexing scheme relating to details of modulators or modulation methods covered by H03C
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H03C2200/0004 1 Circuit elements of modulators
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H03C2200/0008 2 Variable capacitors, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
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H03C2200/0012 2 Emitter or source coupled transistor pairs or long tail pairs
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H03C2200/0016 2 Pre-emphasis or de-emphasis circuits
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H03C2200/002 2 Filters with particular characteristics
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H03C2200/0025 2 Gilbert multipliers
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H03C2200/0029 2 Memory circuits, e.g. ROMs, RAMs, EPROMs, latches, shift registers
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H03C2200/0033 2 Transmission lines, e.g. striplines, microstrips or coplanar lines
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H03C2200/0037 1 Functional aspects of modulators
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H03C2200/0041 2 Calibration of modulators
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H03C2200/0045 2 Pulse width, duty cycle or on/off ratio
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H03C2200/005 2 Modulation sensitivity
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H03C2200/0054 3 Filtering of the input modulating signal for obtaining a constant sensitivity of frequency modulation
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H03C2200/0058 2 Quadrature arrangements
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H03C2200/0062 2 Lowering the supply voltage and saving power
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H03C2200/0066 2 Reduction of carrier leakage or the suppression of the carrier
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H03C2200/007 2 with one sideband wholly or partially suppressed
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H03C2200/0075 2 FM modulation down to DC
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H03C2200/0079 2 Measures to linearise modulation or reduce distortion of modulation characteristics
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H03C2200/0083 3 Predistortion of input modulating signal to obtain a linear modulation characteristic
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H03C2200/0087 2 Measures to address temperature induced variations of modulation
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H03C2200/0091 3 by stabilising the temperature
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H03C2200/0095 3 by compensating temperature induced variations
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H03D DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER (masers, lasers H01S; circuits capable of acting both as modulator and demodulator H03C; details applicable to both modulators and frequency-changers H03C; demodulating pulses H03K9/00; transforming types of pulse modulation H03K11/00; coding, decoding or code conversion, in general H03M; repeater stations H04B7/14; demodulators adapted for ac systems of digital information transmission H04L27/00; synchronous demodulators adapted for colour television H04N9/66)
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H03D1/00 0 Demodulation of amplitude-modulated oscillations (H03D5/00, H03D9/00, H03D11/00 take precedence)
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H03D1/02 1 Details
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H03D1/04 2 Modifications of demodulators to reduce interference by undesired signals
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H03D1/06 2 Modifications of demodulators to reduce distortion, e.g. by negative feedback
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H03D1/08 1 by means of non-linear two-pole elements (H03D1/22, H03D1/26, H03D1/28 take precedence)
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H03D1/10 2 of diodes
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H03D1/12 3 with provision for equalising ac and dc loads
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H03D1/14 1 by means of non-linear elements having more than two poles (H03D1/22, H03D1/26, H03D1/28 take precedence)
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H03D1/16 2 of discharge tubes
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H03D1/18 2 of semiconductor devices
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H03D1/20 2 with provision for preventing undesired type of demodulation, e.g. preventing anode detection in a grid detection circuit
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H03D1/22 1 Homodyne or synchrodyne circuits {(receiver circuits H04B1/30)}
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H03D1/2209 2 {Decoders for simultaneous demodulation and decoding of signals composed of a sum-signal and a suppressed carrier, amplitude modulated by a difference signal, e.g. stereocoders}
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H03D1/2218 3 {using diodes for the decoding}
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H03D1/2227 3 {using switches for the decoding (diodes used as switches H03D1/2218)}
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H03D1/2236 3 {using a phase locked loop}
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H03D1/2245 2 {using two quadrature channels (H03D1/2209 takes precedence)}
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H03D1/2254 3 {and a phase locked loop}
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H03D2001/2263 4 {including a counter or a divider in the PLL}
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H03D1/2272 2 {using FET's (H03D1/2209, H03D1/2245 and H03D1/2281 take precedence)}
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H03D1/2281 2 {using a phase locked loop (H03D1/2236 and H03D1/2254 take precedence)}
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H03D1/229 2 {using at least a two emittor-coupled differential pair of transistors (H03D1/2209 - H03D1/2281 take precedence)}
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H03D1/24 2 for demodulation of signals wherein one sideband or the carrier has been wholly or partially suppressed {(receiver circuits H04B1/302)}
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H03D1/26 1 by means of transit-time tubes
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H03D1/28 1 by deflecting an electron beam in a discharge tube (H03D1/26 takes precedence)
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H03D3/00 0 Demodulation of angle-, {frequency- or phase-} modulated oscillations (H03D5/00, H03D9/00, H03D11/00 take precedence)
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H03D3/001 1 {Details of arrangements applicable to more than one type of frequency demodulator (H03D3/28 takes precedence)}
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H03D3/002 2 {Modifications of demodulators to reduce interference by undesired signals (H03D3/248 takes precedence)}
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H03D3/003 2 {Arrangements for reducing frequency deviation, e.g. by negative frequency feedback (combined with a phase locked loop demodulator H03D3/242; changing frequency deviation for modulators H03C3/06)}
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H03D3/004 3 {wherein the demodulated signal is used for controlling an oscillator, e.g. the local oscillator}
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H03D3/005 3 {wherein the demodulated signal is used for controlling a bandpass filter (automatic bandwidth control H03G; automatic frequency control H03J7/02)}
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H03D3/006 1 {by sampling the oscillations and further processing the samples, e.g. by computing techniques (H03D3/007 takes precedence)}
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H03D3/007 1 {by converting the oscillations into two quadrature related signals (H03D3/245 takes precedence)}
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H03D3/008 2 {Compensating DC offsets}
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H03D3/009 2 {Compensating quadrature phase or amplitude imbalances}
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H03D3/02 1 by detecting phase difference between two signals obtained from input signal (H03D3/28 - H03D3/32 take precedence; {muting in frequency-modulation receivers H03G3/28}; limiting arrangements H03G11/00)
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H03D3/04 2 by counting or integrating cycles of oscillations {(arrangements for measuring frequencies G01R23/10)}
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H03D3/06 2 by combining signals additively or in product demodulators
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H03D3/08 3 by means of diodes, e.g. Foster-Seeley discriminator
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H03D3/10 4 in which the diodes are simultaneously conducting during the same half period of the signal, e.g. radio detector
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H03D3/12 3 by means of discharge tubes having more than two electrodes
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H03D3/14 3 by means of semiconductor devices having more than two electrodes
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H03D3/16 3 by means of electromechanical resonators
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H03D3/18 2 by means of synchronous gating arrangements
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H03D3/20 3 producing pulses whose amplitude or duration depends on phase difference
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H03D3/22 2 by means of active elements with more than two electrodes to which two signals are applied derived from the signal to be demodulated and having a phase difference related to the frequency deviation, e.g. phase detector
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H03D3/24 2 Modifications of demodulators to reject or remove amplitude variations by means of locked-in oscillator circuits
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H03D3/241 3 {the oscillator being part of a phase locked loop}
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H03D3/242 4 {combined with means for controlling the frequency of a further oscillator, e.g. for negative frequency feedback or AFC}
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H03D3/244 4 {combined with means for obtaining automatic gain control}
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H03D3/245 4 {using at least twophase detectors in the loop (H03D3/244 takes precedence; in general H03L7/087)}
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H03D3/247 4 {using a controlled phase shifter (in general H03L7/081)}
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H03D3/248 4 {with means for eliminating interfering signals, e.g. by multiple phase locked loops (multiple loops in general H03L7/07, H03L7/22)}
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H03D3/26 1 by means of sloping amplitude/frequency characteristic of tuned or reactive circuit (H03D3/28 - H03D3/32 takes precedence)
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H03D3/28 1 Modifications of demodulators to reduce effects of temperature variations ({automatic frequency regulation in receivers H03J}; automatic frequency control H03L)
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H03D3/30 1 by means of transit-time tubes
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H03D3/32 1 by deflecting an electron beam in a discharge tube (H03D3/30 takes precedence)
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H03D3/34 1 by means of electromechanical devices (H03D3/16 takes precedence)
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H03D5/00 0 Circuits for demodulating amplitude-modulated or angle-modulated oscillations at will (H03D9/00, H03D11/00 take precedence)
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H03D7/00 0 Transference of modulation from one carrier to another, e.g. frequency-changing (H03D9/00, H03D11/00 take precedence; dielectric amplifiers, magnetic amplifiers, parametric amplifiers used as a frequency-changers H03F)
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H03D7/005 1 {by means of superconductive devices}
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H03D7/02 1 by means of diodes (H03D7/14 - H03D7/22 take precedence)
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H03D7/04 2 having {a partially} negative resistance characteristic, e.g. tunnel diode
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H03D7/06 1 by means of discharge tubes having more than two electrodes (H03D7/14 - H03D7/22 take precedence)
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H03D7/08 2 the signals to be mixed being applied between the same two electrodes
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H03D7/10 2 the signals to be mixed being applied between different pairs of electrodes
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H03D7/12 1 by means of semiconductor devices having more than two electrodes (H03D7/14 - H03D7/22 take precedence)
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H03D7/125 2 {with field effect transistors}
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H03D7/14 1 Balanced arrangements
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H03D7/1408 2 {with diodes}
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H03D7/1416 2 {with discharge tubes having more than two electrodes}
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H03D7/1425 2 {with transistors}
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H03D7/1433 3 {using bipolar transistors (H03D7/145 takes precedence)}
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H03D7/1441 3 {using field-effect transistors (H03D7/145 takes precedence)}
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H03D7/145 3 {using a combination of bipolar transistors and field-effect transistors}
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H03D7/1458 3 {Double balanced arrangements, i.e. where both input signals are differential}
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H03D7/1466 3 {Passive mixer arrangements}
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H03D7/1475 3 {Subharmonic mixer arrangements}
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H03D7/1483 3 {comprising components for selecting a particular frequency component of the output}
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H03D7/1491 3 {Arrangements to linearise a transconductance stage of a mixer arrangement}
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H03D7/16 1 Multiple-frequency-changing
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H03D7/161 2 {all the frequency changers being connected in cascade}
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H03D7/163 3 {the local oscillations of at least two of the frequency changers being derived from a single oscillator}
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H03D7/165 2 {at least two frequency changers being located in different paths, e.g. in two paths with carriers in quadrature (combined with amplitude demodulation H03D1/2245, combined with angle demodulation H03D3/007; N-path filters H03H19/002)}
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H03D7/166 3 {using two or more quadrature frequency translation stages}
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H03D7/168 4 {using a feedback loop containing mixers or demodulators}
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H03D7/18 1 Modifications of frequency-changers for eliminating image frequencies {(H03D7/16 takes precedence)}
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H03D7/20 1 by means of transit-time tubes
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H03D7/22 1 by deflecting an electron beam in a discharge tube (H03D7/20 takes precedence)
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H03D9/00 0 Demodulation or transference of modulation of modulated electromagnetic waves (demodulating light, transferring modulation in light waves G02F2/00)
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H03D9/02 1 Demodulation using distributed inductance and capacitance, e.g. in feeder lines
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H03D9/04 2 for angle-modulated oscillations
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H03D9/06 1 Transference of modulation using distributed inductance and capacitance
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H03D9/0608 2 {by means of diodes}
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H03D9/0616 3 {mounted in a hollow waveguide (H03D9/0641 takes precedence)}
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H03D9/0625 3 {mounted in a coaxial resonator structure}
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H03D9/0633 3 {mounted on a stripline circuit}
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H03D9/0641 4 {located in a hollow waveguide}
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H03D9/065 2 {by means of discharge tubes having more than two electrodes}
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H03D9/0658 2 {by means of semiconductor devices having more than two electrodes}
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H03D9/0666 3 {using bipolar transistors (H03D9/0683 takes precedence)}
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H03D9/0675 3 {using field effect transistors (H03D9/0683 takes precedence)}
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H03D9/0683 3 {using a combination of bipolar transistors and field effect transistors}
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H03D2009/0691 2 {by means of superconductive devices}
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H03D11/00 0 Super-regenerative demodulator circuits {(applications in responders G01S)}
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H03D11/02 1 for amplitude-modulated oscillations
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H03D11/04 2 by means of semiconductor devices having more than two electrodes
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H03D11/06 1 for angle-modulated oscillations
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H03D11/08 2 by means of semiconductor devices having more than two electrodes
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H03D13/00 0 Circuits for comparing the phase or frequency of two mutually-independent oscillations {(measuring phase G01R25/00; phase-discriminators with yes/no output G01R25/005)}
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H03D13/001 1 {in which a pulse counter is used followed by a conversion into an analog signal}
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H03D13/002 2 {the counter being an up-down counter}
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H03D13/003 1 {in which both oscillations are converted by logic means into pulses which are applied to filtering or integrating means}
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H03D13/004 2 {the logic means delivering pulses at more than one terminal, e.g. up and down pulses}
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H03D13/005 1 {in which one of the oscillations is, or is converted into, a signal having a special waveform, e.g. triangular}
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H03D13/006 2 {and by sampling this signal by narrow pulses obtained from the second oscillation}
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H03D13/007 1 {by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations}
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H03D13/008 2 {using transistors}
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H03D13/009 2 {using diodes}
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H03D99/00 0 Subject matter not provided for in other groups of this subclass
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H03D2200/00 0 Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
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H03D2200/0001 1 Circuit elements of demodulators
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H03D2200/0003 2 Rat race couplers
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H03D2200/0005 2 Wilkinson power dividers or combiners
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H03D2200/0007 2 Dual gate field effect transistors
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H03D2200/0009 2 Emitter or source coupled transistor pairs or long tail pairs
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H03D2200/0011 2 Diodes
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H03D2200/0013 3 Diodes connected in a ring configuration
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H03D2200/0015 3 Diodes connected in a star configuration
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H03D2200/0017 2 Intermediate frequency filter
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H03D2200/0019 2 Gilbert multipliers
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H03D2200/0021 2 Frequency multipliers
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H03D2200/0023 2 Balun circuits
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H03D2200/0025 2 Gain control circuits
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H03D2200/0027 3 including arrangements for assuring the same gain in two paths
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H03D2200/0029 2 Loop circuits with controlled phase shift
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H03D2200/0031 2 PLL circuits with quadrature locking, e.g. a Costas loop
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H03D2200/0033 2 Current mirrors
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H03D2200/0035 2 Digital multipliers and adders used for detection
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H03D2200/0037 2 Diplexers
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H03D2200/0039 2 Exclusive OR logic circuits
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H03D2200/0041 1 Functional aspects of demodulators
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H03D2200/0043 2 Bias and operating point
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H03D2200/0045 2 Calibration of demodulators
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H03D2200/0047 2 Offset of DC voltage or frequency
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H03D2200/0049 2 Analog multiplication for detection
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H03D2200/005 2 Analog to digital conversion
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H03D2200/0052 2 Digital to analog conversion
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H03D2200/0054 2 Digital filters
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H03D2200/0056 3 including a digital decimation filter
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H03D2200/0058 3 using a digital filter with interpolation
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H03D2200/006 2 Signal sampling
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H03D2200/0062 3 Computation of input samples, e.g. successive samples
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H03D2200/0064 2 Detection of passages through null of a signal
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H03D2200/0066 2 Mixing
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H03D2200/0068 3 by computation
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H03D2200/007 3 by using a logic circuit, e.g. flipflop, XOR
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H03D2200/0072 3 by complex multiplication
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H03D2200/0074 3 using a resistive mixer or a passive mixer
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H03D2200/0076 3 using a distributed mixer
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H03D2200/0078 3 using a switched phase shifter or delay line
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H03D2200/008 2 Hilbert type transformation
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H03D2200/0082 2 Quadrature arrangements
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H03D2200/0084 2 Lowering the supply voltage and saving power
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H03D2200/0086 2 Reduction or prevention of harmonic frequencies
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H03D2200/0088 2 Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
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H03D2200/009 2 Reduction of local oscillator or RF leakage
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H03D2200/0092 2 Detection or reduction of fading in multipath transmission arrangements
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H03D2200/0094 2 Measures to address temperature induced variations of demodulation
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H03D2200/0096 3 by stabilising the temperature
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H03D2200/0098 3 by compensating temperature induced variations
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H03F AMPLIFIERS (measuring, testing G01R; optical parametric amplifiers G02F; circuit arrangement with secondary emission tubes H01J43/30; masers, lasers H01S; control of amplification H03G; coupling arrangements independent of the nature of the amplifiers, voltage dividers H03H; amplifiers capable only of dealing with pulses H03K; repeater circuits in transmission lines H04B3/36, H04B3/58; application of speech amplifiers in telephonic communication H04M1/60, H04M3/40)
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H03F1/00 0 Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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H03F1/02 1 Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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H03F1/0205 2 {in transistor amplifiers}
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H03F1/0211 3 {with control of the supply voltage or current}
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H03F1/0216 4 {Continuous control}
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H03F1/0222 5 {by using a signal derived from the input signal}
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H03F1/0227 6 {using supply converters}
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H03F1/0233 5 {by using a signal derived from the output signal, e.g. bootstrapping the voltage supply}
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H03F1/0238 6 {using supply converters}
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H03F1/0244 4 {Stepped control}
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H03F1/025 5 {by using a signal derived from the input signal}
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H03F1/0255 5 {by using a signal derived from the output signal}
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H03F1/0261 3 {with control of the polarisation voltage or current, e.g. gliding Class A}
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H03F1/0266 4 {by using a signal derived from the input signal}
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H03F1/0272 4 {by using a signal derived from the output signal}
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H03F1/0277 3 {Selecting one or more amplifiers from a plurality of amplifiers}
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H03F1/0283 3 {Reducing the number of Dc-current paths}
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H03F1/0288 3 {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers}
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H03F1/0294 3 {using vector summing of two or more constant amplitude phase-modulated signals}
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H03F1/04 2 in discharge-tube amplifiers
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H03F1/06 3 to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators {(modulation H03C)}
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H03F1/07 4 Doherty-type amplifiers
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H03F1/08 1 Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements (wide-band amplifiers with inter-stage coupling networks incorporating these impedances H03F1/42; eliminating transit-time effects in vacuum tubes H01J21/34)
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H03F1/083 2 {in transistor amplifiers (H03F1/10 - H03F1/22 take precedence)}
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H03F1/086 3 {with FET's}
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H03F1/10 2 by use of amplifying elements with multiple electrode connections
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H03F1/12 2 by use of attenuating means {(attenuators H03G)}
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H03F1/13 3 in discharge tube amplifiers
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H03F1/14 2 by use of neutralising means
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H03F1/16 3 in discharge tube amplifiers
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H03F1/18 2 by use of distributed coupling {, i.e. distributed amplifiers (distributed amplifiers using coupling networks with distributed constants H03F3/605)}
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H03F1/20 3 in discharge-tube amplifiers
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H03F1/22 2 by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
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H03F1/223 3 {with MOSFET's}
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H03F1/226 3 {with junction-FET's}
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H03F1/24 3 in discharge-tube amplifiers
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H03F1/26 1 Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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H03F1/28 2 in discharge-tube amplifiers {(constructional modifications H01J23/11)}
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H03F1/30 1 Modifications of amplifiers to reduce influence of variations of temperature or supply voltage {or other physical parameters (in differential amplifiers H03F3/45479)}
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H03F1/301 2 {in MOSFET amplifiers (H03F1/303, H03F1/305, H03F1/308 take precedence)}
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H03F1/302 2 {in bipolar transistor amplifiers (H03F1/303, H03F1/305, H03F1/307 take precedence)}
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H03F1/303 2 {using a switching device (H03F1/305, H03F3/005, H03F3/38 take precedence)}
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H03F1/304 3 {and using digital means}
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H03F1/305 2 {in case of switching on or off of a power supply}
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H03F1/306 2 {in junction-FET amplifiers (H03F1/303, H03F1/305, H03F1/309 take precedence)}
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H03F1/307 2 {in push-pull amplifiers}
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H03F1/308 3 {using MOSFET}
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H03F1/309 3 {using junction-FET}
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H03F1/32 1 Modifications of amplifiers to reduce non-linear distortion (by negative feedback H03F1/34)
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H03F1/3205 2 {in field-effect transistor amplifiers}
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H03F1/3211 2 {in differential amplifiers}
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H03F1/3217 2 {in single ended push-pull amplifiers}
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H03F1/3223 2 {using feed-forward (H03F1/3211 takes precedence)}
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H03F1/3229 3 {using a loop for error extraction and another loop for error subtraction}
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H03F1/3235 4 {using a pilot signal}
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H03F1/3241 2 {using predistortion circuits (H03F1/3211, H03F1/3217 take precedence)}
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H03F1/3247 3 {using feedback acting on predistortion circuits (H03F1/3264 takes precedence)}
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H03F1/3252 3 {using multiple parallel paths between input and output (H03F1/3258, H03F1/3282, H03F1/3294 take precedence)}
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H03F1/3258 3 {based on polynomial terms}
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H03F1/3264 3 {in audio amplifiers}
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H03F1/327 4 {to emulate discharge tube amplifier characteristics}
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H03F1/3276 3 {using the nonlinearity inherent to components, e.g. a diode}
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H03F1/3282 3 {Acting on the phase and the amplitude of the input signal}
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H03F1/3288 4 {to compensate phase shift as a function of the amplitude}
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H03F1/3294 3 {Acting on the real and imaginary components of the input signal}
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H03F1/33 2 in discharge-tube amplifiers
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H03F1/34 1 Negative-feedback-circuit arrangements with or without positive feedback (H03F1/02 - H03F1/30, H03F1/38 - H03F1/50, H03F3/50 take precedence; {for rejection of common mode signals H03F3/45479})
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H03F1/342 2 {in field-effect transistor amplifiers}
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H03F1/345 2 {using hybrid or directional couplers}
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H03F1/347 2 {using transformers}
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H03F1/36 2 in discharge-tube amplifiers
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H03F1/38 1 Positive-feedback circuit arrangements without negative feedback
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H03F1/40 2 in discharge-tube amplifiers
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H03F1/42 1 Modifications of amplifiers to extend the bandwidth
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H03F1/48 2 of aperiodic amplifiers
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H03F1/483 3 {with field-effect transistors}
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H03F1/486 3 {with IC amplifier blocks}
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H03F1/50 3 with tubes only
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H03F1/52 1 Circuit arrangements for protecting such amplifiers {(monitoring arrangements G01R31/28; increasing reliability in communication systems, e.g. using redundancy H04B1/74)}
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H03F1/523 2 {for amplifiers using field-effect devices (H03F1/526 takes precedence)}
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H03F1/526 2 {protecting by using redundant amplifiers}
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H03F1/54 2 with tubes only {(testing of vacuum tubes G01R31/25)}
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H03F1/542 3 {Replacing by standby devices}
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H03F1/544 3 {Protection of filaments}
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H03F1/546 3 {Delaying application of anode power supply with respect to application of filament heating power supply}
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H03F1/548 3 {Protection of anode or grid circuit against overload}
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H03F1/56 1 Modifications of input or output impedances, not otherwise provided for
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H03F1/565 2 {using inductive elements}
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H03F3/00 0 Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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H03F3/005 1 {using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers (H03F3/45 takes precedence)}
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H03F3/02 1 with tubes only (subsequent sub-groups take precedence)
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H03F3/04 1 with semiconductor devices only (subsequent sub-groups take precedence)
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H03F3/06 2 using hole storage effect
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H03F3/08 2 controlled by light
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H03F3/082 3 {with FET's (H03F3/085 takes precedence)}
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H03F3/085 3 {using opto-couplers between stages}
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H03F3/087 3 {with IC amplifier blocks (H03F3/085 takes precedence)}
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H03F3/10 2 with diodes {(parametric amplifiers H03F7/00)}
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H03F3/12 3 with Esaki diodes
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H03F3/14 2 with amplifying devices having more than three electrodes or more than two PN junctions
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H03F3/16 2 with field-effect devices
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H03F3/165 3 {with junction-FET's}
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H03F3/181 1 Low frequency amplifiers, e.g. audio preamplifiers
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H03F3/183 2 with semiconductor devices only
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H03F3/185 3 with field-effect devices (H03F3/187 takes precedence)
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H03F3/1855 4 {with junction-FET devices}
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H03F3/187 3 in integrated circuits
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H03F3/189 1 High frequency amplifiers, e.g. radio frequency amplifiers
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H03F3/19 2 with semiconductor devices only
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H03F3/191 3 Tuned amplifiers (H03F3/193, H03F3/195 take precedence)
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H03F3/193 3 with field-effect devices (H03F3/195 takes precedence)
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H03F3/1935 4 {with junction-FET devices}
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H03F3/195 3 in integrated circuits
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H03F3/20 1 Power amplifiers, e.g. Class B amplifiers, Class C amplifiers (H03F3/26 - H03F3/30 take precedence)
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H03F3/21 2 with semiconductor devices only {(H03F3/245 takes precedence)}
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H03F3/211 3 {using a combination of several amplifiers (H03F3/60 takes precedence)}
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H03F3/213 3 in integrated circuits
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H03F3/217 3 Class D power amplifiers; Switching amplifiers
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H03F3/2171 4 {with field-effect devices (H03F3/2173 - H03F3/2178 take precedence)}
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H03F3/2173 4 {of the bridge type}
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H03F3/2175 4 {using analogue-digital or digital-analogue conversion (H03F3/2173 takes precedence)}
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H03F3/2176 4 {Class E amplifiers}
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H03F3/2178 4 {using more than one switch or switching amplifier in parallel or in series (H03F3/2173, H03F3/2175 take precedence)}
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H03F3/22 2 with tubes only (H03F3/24 takes precedence)
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H03F3/24 2 of transmitter output stages
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H03F3/245 3 {with semiconductor devices only}
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H03F3/26 1 Push-pull amplifiers; Phase-splitters therefor (duplicated single-ended push-pull arrangements or phase-splitters therefor H03F3/30)
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H03F3/265 2 {with field-effect transistors only}
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H03F3/28 2 with tubes only
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H03F3/30 1 Single-ended push-pull {[SEPP]} amplifiers {(single-ended sense amplifiers G11C7/067)}; Phase-splitters therefor
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H03F3/3001 2 {with field-effect transistors}
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H03F3/3008 3 {Bifet SEPP output stages}
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H03F3/301 3 {CMOS common drain output SEPP amplifiers (H03F3/3008 takes precedence)}
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H03F3/3011 4 {with asymmetrical driving of the end stage}
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H03F3/3013 5 {using a common drain driving stage, i.e. follower stage}
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H03F3/3015 5 {using a common source driving stage, i.e. inverting stage}
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H03F3/3016 4 {with symmetrical driving of the end stage}
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H03F3/3018 5 {using opamps as driving stages}
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H03F3/302 5 {using two SEPP driving stages}
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H03F3/3022 3 {CMOS common source output SEPP amplifiers (H03F3/3008 takes precedence)}
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H03F3/3023 4 {with asymmetrical driving of the end stage}
|
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|
|
H03F3/3025 5 {using a common drain driving stage, i.e. follower stage}
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|
H03F3/3027 5 {using a common source driving stage, i.e. inverting stage}
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H03F3/3028 4 {with symmetrical driving of the end stage}
|
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H03F3/303 5 {using opamps as driving stages}
|
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H03F3/3032 5 {using two SEPP driving stages}
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H03F3/3033 3 {NMOS SEPP output stages (H03F3/3008 takes precedence)}
|
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H03F3/3035 4 {using differential amplifiers as phase-splitting elements}
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H03F3/3037 4 {with asymmetric control, i.e. one control branch containing a supplementary phase inverting stage}
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H03F3/3038 3 {PMOS SEPP output stages (H03F3/3008 takes precedence)}
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H03F3/304 4 {using differential amplifiers as phase-splitting element}
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H03F3/3042 4 {with asymmetric control, i.e. one control branch containing a supplementary phase inverting stage}
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H03F3/3044 3 {Junction FET SEPP output stages (H03F3/3008 takes precedence)}
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H03F3/3045 4 {with asymmetrical driving of the end stage}
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H03F3/3047 5 {using a common drain driving stage, i.e. follower stage}
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H03F3/3049 5 {using a common source driving stage, i.e. inverting stage}
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H03F3/305 4 {with symmetrical driving of the end stage}
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H03F3/3052 5 {using opamps as driving stages}
|
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H03F3/3054 5 {using two SEPP driving stages}
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H03F3/3055 3 {Parallelled mixed SEPP stages, e.g. a CMOS common drain and a CMOS common source in parallel or bipolar SEPP and FET SEPP in parallel}
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H03F3/3057 4 {with asymmetrical driving of the end stage}
|
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H03F3/3059 4 {with symmetrical driving of the end stage}
|
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H03F3/3061 3 {Bridge type, i.e. two complementary controlled SEPP output stages}
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H03F3/3062 4 {with asymmetrical driving of the end stage}
|
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H03F3/3064 4 {with symmetrical driving of the end stage}
|
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H03F3/3066 2 {the collectors of complementary power transistors being connected to the output}
|
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H03F3/3067 3 {with asymmetrical driving of the end stage}
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H03F3/3069 2 {the emitters of complementary power transistors being connected to the output}
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H03F3/3071 3 {with asymmetrical driving of the end stage}
|
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H03F3/3072 4 {using Darlington transistors (H03F3/3074 takes precedence)}
|
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H03F3/3074 4 {using parallel power transistors}
|
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H03F3/3076 3 {with symmetrical driving of the end stage}
|
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H03F3/3077 4 {using Darlington transistors (H03F3/3079 takes precedence)}
|
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H03F3/3079 4 {using parallel power transistors}
|
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H03F3/3081 2 {Duplicated single-ended push-pull arrangements, i.e. bridge circuits (using FET's H03F3/3061)}
|
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H03F3/3083 2 {the power transistors being of the same type (H03F3/3001 takes precedence)}
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H03F3/3084 3 {one of the power transistors being controlled by the output signal}
|
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H03F3/3086 3 {two power transistors being controlled by the input signal}
|
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H03F3/3088 4 {with asymmetric control, i.e. one control branch containing a supplementary phase inverting transistor}
|
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H03F3/3089 4 {comprising field-effect transistors in the control circuit}
|
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H03F3/3091 4 {comprising two complementary transistors for phase-splitting}
|
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H03F3/3093 4 {comprising a differential amplifier as phase-splitting element}
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H03F3/3094 4 {Phase splitters therefor (H03F3/3088, H03F3/3091, H03F3/3093, H03F3/3096, H03F3/3098 take precedence)}
|
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H03F3/3096 4 {using a single transistor with output on emitter and collector as phase splitter}
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H03F3/3098 4 {using a transformer as phase splitter}
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H03F3/34 1 Dc amplifiers in which all stages are dc-coupled (H03F3/45 takes precedence)
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H03F3/343 2 with semiconductor devices only
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H03F3/3432 3 {with bipolar transistors}
|
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H03F3/3435 4 {using Darlington amplifiers}
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H03F3/3437 5 {with complementary transistors}
|
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H03F3/345 3 with field-effect devices (H03F3/347 takes precedence)
|
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H03F3/3455 4 {with junction-FET's}
|
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H03F3/347 3 in integrated circuits
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H03F3/36 2 with tubes only
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H03F3/38 1 Dc amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers ({switched capacitor amplifiers H03F3/005}; modulators in general H03C; demodulators in general H03D; amplitude modulation of pulses in general H03K7/02; amplitude demodulation of pulses in general H03K9/02)
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H03F3/387 2 with semiconductor devices only
|
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H03F3/393 3 with field-effect devices
|
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H03F3/40 2 with tubes only
|
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H03F3/42 1 Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
|
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H03F3/423 2 {with MOSFET's}
|
|
|
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|
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H03F3/426 2 {with junction-FET's}
|
|
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|
|
H03F3/44 2 with tubes only
|
|
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|
|
H03F3/45 1 Differential amplifiers (differential sense amplifiers G11C7/062)
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|
|
H03F3/45071 2 {with semiconductor devices only}
|
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|
|
H03F3/45076 3 {characterised by the way of implementation of the active amplifying circuit in the differential amplifier}
|
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|
H03F3/4508 4 {using bipolar transistors as the active amplifying circuit (H03F3/45278 takes precedence)}
|
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|
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|
H03F3/45085 5 {Long tailed pairs (H03F3/45112, H03F3/45139 take precedence)}
|
|
|
|
|
|
H03F3/45089 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45094 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45098 5 {PI types (H03F3/45125, H03F3/45152 take precedence)}
|
|
|
|
|
|
H03F3/45103 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45107 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45112 5 {Complementary long tailed pairs having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45116 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45121 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45125 5 {Complementary PI types having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/4513 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45134 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45139 5 {Complementary long tailed pairs having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45143 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45147 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45152 5 {Complementary PI types having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45156 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45161 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45165 5 {Complementary cross coupled types}
|
|
|
|
|
|
H03F3/4517 5 {Complementary non-cross coupled types}
|
|
|
|
|
|
H03F3/45174 5 {Mirror types}
|
|
|
|
|
|
H03F3/45179 4 {using MOSFET transistors as the active amplifying circuit (H03F3/45278 takes precedence)}
|
|
|
|
|
|
H03F3/45183 5 {Long tailed pairs (H03F3/4521, H03F3/45237 take precedence)}
|
|
|
|
|
|
H03F3/45188 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45192 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45197 5 {Pl types (H03F3/45224, H03F3/45251 take precedence)}
|
|
|
|
|
|
H03F3/45201 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45206 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/4521 5 {Complementary long tailed pairs having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45215 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45219 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45224 5 {Complementary Pl types having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45228 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45233 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45237 5 {Complementary long tailed pairs having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45242 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45246 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45251 5 {Complementary Pl types having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45255 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/4526 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45264 5 {Complementary cross coupled types}
|
|
|
|
|
|
H03F3/45269 5 {Complementary non-cross coupled types}
|
|
|
|
|
|
H03F3/45273 5 {Mirror types}
|
|
|
|
|
|
H03F3/45278 4 {using BiFET transistors as the active amplifying circuit}
|
|
|
|
|
|
H03F3/45282 5 {Long tailed pairs (H03F3/45309, H03F3/45336 take precedence)}
|
|
|
|
|
|
H03F3/45286 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45291 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45295 5 {Pl types (H03F3/45322, H03F3/45349 take precedence)}
|
|
|
|
|
|
H03F3/453 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45304 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45309 5 {Complementary long tailed pairs having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45313 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45318 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45322 5 {Complementary Pl types having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45327 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45331 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45336 5 {Complementary long tailed pairs having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/4534 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45345 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45349 5 {Complementary Pl types having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45354 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45358 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45363 5 {Complementary cross coupled types}
|
|
|
|
|
|
H03F3/45367 5 {Complementary non-cross coupled types}
|
|
|
|
|
|
H03F3/45372 5 {Mirror types}
|
|
|
|
|
|
H03F3/45376 4 {using junction FET transistors as the active amplifying circuit (H03F3/45278 takes precedence)}
|
|
|
|
|
|
H03F3/45381 5 {Long tailed pairs (H03F3/45408, H03F3/45434 take precedence)}
|
|
|
|
|
|
H03F3/45385 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/4539 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45394 5 {Pl types (H03F3/45421, H03F3/45448 take precedence)}
|
|
|
|
|
|
H03F3/45399 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45403 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45408 5 {Complementary long tailed pairs having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45412 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45417 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45421 5 {Complementary Pl types having parallel inputs and being supplied in parallel}
|
|
|
|
|
|
H03F3/45426 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/4543 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45434 5 {Complementary long tailed pairs having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45439 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45443 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45448 5 {Complementary Pl types having parallel inputs and being supplied in series}
|
|
|
|
|
|
H03F3/45452 6 {Non-folded cascode stages}
|
|
|
|
|
|
H03F3/45457 6 {Folded cascode stages}
|
|
|
|
|
|
H03F3/45461 5 {Complementary cross coupled types}
|
|
|
|
|
|
H03F3/45466 5 {Complementary non-cross coupled types}
|
|
|
|
|
|
H03F3/4547 5 {Mirror types}
|
|
|
|
|
|
H03F3/45475 4 {using IC blocks as the active amplifying circuit}
|
|
|
|
|
|
H03F3/45479 3 {characterised by the way of common mode signal rejection}
|
|
|
|
|
|
H03F3/45484 4 {in differential amplifiers with bipolar transistors as the active amplifying circuit (H03F3/4578 takes precedence)}
|
|
|
|
|
|
H03F3/45488 5 {by using feedback means (H03F3/4578 takes precedence)}
|
|
|
|
|
|
H03F3/45493 6 {Measuring at the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45497 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45502 7 {Controlling the common emitter circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45506 7 {Controlling the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45511 7 {Controlling the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45515 6 {Measuring at the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/4552 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45524 7 {Controlling the common emitter circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45529 7 {Controlling the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45533 6 {Measuring at the common emitter circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45538 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45542 7 {Controlling the common emitter circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45547 5 {by using feedforward means (H03F3/45596 takes precedence)}
|
|
|
|
|
|
H03F3/45551 6 {Measuring at the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45556 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/4556 7 {Controlling the common emitter circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45565 7 {Controlling the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45569 7 {Controlling the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45573 6 {Measuring at the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45578 7 {Controlling the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45582 6 {Measuring at the common emitter circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45587 7 {Controlling the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45591 7 {Controlling the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45596 5 {by offset reduction}
|
|
|
|
|
|
H03F3/456 6 {by using a feedback circuit}
|
|
|
|
|
|
H03F3/45605 7 {using switching means, e.g. sample and hold}
|
|
|
|
|
|
H03F3/45609 6 {by using a feedforward circuit}
|
|
|
|
|
|
H03F3/45614 7 {using switching means, e.g. sample and hold}
|
|
|
|
|
|
H03F3/45618 6 {by using balancing means}
|
|
|
|
|
|
H03F3/45623 7 {using switching means}
|
|
|
|
|
|
H03F3/45627 6 {by using cross switches}
|
|
|
|
|
|
H03F3/45632 4 {in differential amplifiers with FET transistors as the active amplifying circuit (H03F3/4578 takes precedence)}
|
|
|
|
|
|
H03F3/45636 5 {by using feedback means (H03F3/45744 takes precedence)}
|
|
|
|
|
|
H03F3/45641 6 {Measuring at the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45645 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/4565 7 {Controlling the common source circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45654 7 {Controlling the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45659 7 {Controlling the loading circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45663 6 {Measuring at the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45668 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45672 7 {Controlling the common source circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45677 7 {Controlling the active amplifying circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45681 6 {Measuring at the common source circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/45686 7 {Controlling the input circuit of the differential amplifier}
|
|
|
|
|
|
H03F3/4569 7 {Controlling the common source circuit of the differential amplifier}
|
|
|
|
|
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H03F3/45695 5 {by using feedforward means (H03F3/45744 takes precedence)}
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H03F3/45699 6 {Measuring at the input circuit of the differential amplifier}
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H03F3/45704 7 {Controlling the input circuit of the differential amplifier}
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H03F3/45708 7 {Controlling the common source circuit of the differential amplifier}
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H03F3/45713 7 {Controlling the active amplifying circuit of the differential amplifier}
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H03F3/45717 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45721 6 {Measuring at the active amplifying circuit of the differential amplifier}
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H03F3/45726 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/4573 6 {Measuring at the common source circuit of the differential amplifier}
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H03F3/45735 7 {Controlling the active amplifying circuit of the differential amplifier}
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H03F3/45739 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45744 5 {by offset reduction}
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H03F3/45748 6 {by using a feedback circuit}
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H03F3/45753 7 {using switching means, e.g. sample and hold}
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H03F3/45757 6 {by using a feedforward circuit}
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H03F3/45762 7 {using switching means, e.g. sample and hold}
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H03F3/45766 6 {by using balancing means}
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H03F3/45771 7 {using switching means}
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H03F3/45775 6 {by using cross switches}
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H03F3/4578 4 {in differential amplifiers with BiFET transistors as the active amplifying circuit}
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H03F3/45784 5 {by using feedback means (H03F3/45892 takes precedence)}
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H03F3/45789 6 {Measuring at the loading circuit of the differential amplifier}
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H03F3/45793 7 {Controlling the input circuit of the differential amplifier}
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H03F3/45798 7 {Controlling the common source circuit of the differential amplifier}
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H03F3/45802 7 {Controlling the active amplifying circuit of the differential amplifier}
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H03F3/45807 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45811 6 {Measuring at the active amplifying circuit of the differential amplifier}
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H03F3/45816 7 {Controlling the input circuit of the differential amplifier}
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H03F3/4582 7 {Controlling the common source circuit of the differential amplifier}
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H03F3/45825 7 {Controlling the active amplifying circuit of the differential amplifier}
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H03F3/45829 6 {Measuring at the common source circuit of the differential amplifier}
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H03F3/45834 7 {Controlling the input circuit of the differential amplifier}
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H03F3/45838 7 {Controlling the common source circuit of the differential amplifier}
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H03F3/45843 5 {by using feedforward means (H03F3/45892 takes precedence)}
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H03F3/45847 6 {Measuring at the input circuit of the differential amplifier}
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H03F3/45852 7 {Controlling the input circuit of the differential amplifier}
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H03F3/45856 7 {Controlling the common source circuit of the differential amplifier}
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H03F3/4586 7 {Controlling the active amplifying circuit of the differential amplifier}
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H03F3/45865 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45869 6 {Measuring at the active amplifying circuit of the differential amplifier}
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H03F3/45874 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45878 6 {Measuring at the common source circuit of the differential amplifier}
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H03F3/45883 7 {Controlling the active amplifying circuit of the differential amplifier}
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H03F3/45887 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45892 5 {by offset reduction}
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H03F3/45896 6 {by using a feedback circuit}
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H03F3/45901 7 {using switching means, e.g. sample and hold}
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H03F3/45905 6 {by using a feedforward circuit}
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H03F3/4591 7 {using switching means, e.g. sample and hold}
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H03F3/45914 6 {by using balancing means}
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H03F3/45919 7 {using switching means}
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H03F3/45923 6 {by using cross switches}
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H03F3/45928 4 {using IC blocks as the active amplifying circuit}
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H03F3/45932 5 {by using feedback means (H03F3/45968 takes precedence)}
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H03F3/45937 6 {Measuring at the loading circuit of the differential amplifier}
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H03F3/45941 7 {Controlling the input circuit of the differential amplifier}
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H03F3/45946 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/4595 5 {by using feedforward means (H03F3/45968 takes precedence)}
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H03F3/45955 6 {Measuring at the input circuit of the differential amplifier}
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H03F3/45959 7 {Controlling the input circuit of the differential amplifier}
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H03F3/45964 7 {Controlling the loading circuit of the differential amplifier}
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H03F3/45968 5 {by offset reduction}
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H03F3/45973 6 {by using a feedback circuit}
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H03F3/45977 7 {using switching means, e.g. sample and hold}
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H03F3/45982 6 {by using a feedforward circuit}
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H03F3/45986 7 {using switching means, e.g. sample and hold}
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H03F3/45991 6 {by using balancing means}
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H03F3/45995 7 {using switching means}
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H03F3/46 1 Reflex amplifiers {(reflection amplifiers H03F3/608)}
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H03F3/48 2 with tubes only
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H03F3/50 1 Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
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H03F3/505 2 {with field-effect devices}
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H03F3/52 2 with tubes only
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H03F3/54 1 Amplifiers using transit-time effect in tubes or semiconductor devices (parametric amplifiers H03F7/00; solid state travelling-wave devices H10N70/10)
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H03F3/55 2 with semiconductor devices only
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H03F3/56 2 using klystrons
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H03F3/58 2 using travelling-wave tubes
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H03F3/60 1 Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators (H03F3/54 takes precedence)
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H03F3/601 2 {using FET's, e.g. GaAs FET's (H03F3/607, H03F3/608 take precedence)}
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H03F3/602 2 {Combinations of several amplifiers}
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H03F3/604 3 {using FET's}
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H03F3/605 2 {Distributed amplifiers}
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H03F3/607 3 {using FET's}
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H03F3/608 2 {Reflection amplifiers, i.e. amplifiers using a one-port amplifying element and a multiport coupler (H03F7/00 takes precedence)}
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H03F3/62 1 Two-way amplifiers
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H03F3/64 2 with tubes only
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H03F3/66 1 Amplifiers simultaneously generating oscillations of one frequency and amplifying signals of another frequency
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H03F3/68 1 Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics {(power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602)}
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H03F3/70 1 Charge amplifiers
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H03F3/72 1 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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H03F5/00 0 Amplifiers with both discharge tubes and semiconductor devices as amplifying elements
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H03F7/00 0 Parametric amplifiers ({H03F19/00 takes precedence}; devices or arrangements for the parametric generation or amplification of light, infra-red or ultra-violet waves G02F1/39)
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H03F7/02 1 using variable-inductance element; using variable-permeability element
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H03F7/04 1 using variable-capacitance element; using variable-permittivity element
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H03F9/00 0 Magnetic amplifiers
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H03F9/02 1 current-controlled, i.e. the load current flowing in both directions through a main coil
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H03F9/04 1 voltage-controlled, i.e. the load current flowing in only one direction through a main coil, e.g. Logan circuits (H03F9/06 takes precedence)
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H03F9/06 1 Control by voltage time integral, i.e. the load current flowing in only one direction through a main coil, whereby the main coil winding also can be used as a control winding, e.g. Ramey circuits
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H03F11/00 0 Dielectric amplifiers
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H03F13/00 0 Amplifiers using amplifying element consisting of two mechanically- or acoustically-coupled transducers, e.g. telephone-microphone amplifier
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H03F15/00 0 Amplifiers using galvano-magnetic effects not involving mechanical movement, e.g. using Hall effect
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H03F17/00 0 Amplifiers using electroluminescent element or photocell
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H03F19/00 0 Amplifiers using superconductivity effects
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H03F99/00 0 Subject matter not provided for in other groups of this subclass
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H03F2200/00 0 Indexing scheme relating to amplifiers
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H03F2200/03 1 the amplifier being designed for audio applications
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H03F2200/06 1 A balun, i.e. balanced to or from unbalanced converter, being present at the input of an amplifier
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H03F2200/09 1 A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
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H03F2200/102 1 A non-specified detector of a signal envelope being used in an amplifying circuit
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H03F2200/105 1 A non-specified detector of the power of a signal being used in an amplifying circuit
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H03F2200/108 1 A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
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H03F2200/111 1 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
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H03F2200/114 1 the amplifier comprising means for electro-magnetic interference [EMI] protection
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H03F2200/117 1 A coil being coupled in a feedback path of an amplifier stage
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H03F2200/12 1 A bias circuit for some stages being shown using transmission lines
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H03F2200/121 1 A transistor in common gate configuration being used in a feedback circuit of an amplifier stage
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H03F2200/123 1 A difference signal between an output and an input signal of an amplifier being coupled back at the input of the amplifier
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H03F2200/126 1 A diode being coupled in a feedback path of an amplifier stage, e.g. active or passive diode
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H03F2200/129 1 there being a feedback over the complete amplifier
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H03F2200/132 1 Hybrid coupler placed in a feedback circuit of an amplifier
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H03F2200/135 1 there being a feedback over one or more internal stages in the global amplifier
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H03F2200/138 1 the feedback circuit comprising a parallel resonance circuit
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H03F2200/141 1 the feedback circuit of the amplifier stage comprising a resistor and a capacitor in series, at least one of them being an active one
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H03F2200/144 1 the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
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H03F2200/147 1 the feedback circuit comprising a series resonance circuit
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H03F2200/15 1 the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
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H03F2200/151 1 A source follower being used in a feedback circuit of an amplifier stage
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H03F2200/153 1 Feedback used to stabilise the amplifier
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H03F2200/156 1 One or more switches are realised in the feedback circuit of the amplifier stage
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H03F2200/159 1 the feedback circuit being closed during a switching time
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H03F2200/162 1 FETs are biased in the weak inversion region
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H03F2200/165 1 A filter circuit coupled to the input of an amplifier
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H03F2200/168 1 Two amplifying stages are coupled by means of a filter circuit
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H03F2200/171 1 A filter circuit coupled to the output of an amplifier
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H03F2200/174 1 Floating gate implemented in MOS technology
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H03F2200/177 1 Folded cascode realised by a folding coil
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H03F2200/18 1 the bias of the gate of a FET being controlled by a control signal
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H03F2200/181 1 A coil being added in the gate circuit of a FET amplifier stage, e.g. for noise reducing purposes
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H03F2200/183 1 the amplifier comprising a gated diode
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H03F2200/186 1 the ground, reference potential being controlled
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H03F2200/189 1 the ground, reference or shield potential difference between different chips being controlled
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H03F2200/192 1 A hybrid coupler being used at the input of an amplifier circuit
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H03F2200/195 1 A hybrid coupler being used as power measuring circuit at the input of an amplifier circuit
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H03F2200/198 1 A hybrid coupler being used as coupling circuit between stages of an amplifier circuit
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H03F2200/201 1 A hybrid coupler being used as power measuring inter-stage circuit between two stages of an amplifier circuit
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H03F2200/204 1 A hybrid coupler being used at the output of an amplifier circuit
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H03F2200/207 1 A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
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H03F2200/21 1 Bias resistors are added at the input of an amplifier
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H03F2200/211 1 the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
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H03F2200/213 1 A variable capacitor being added in the input circuit, e.g. base, gate, of an amplifier stage
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H03F2200/216 1 A coil being added in the input circuit, e.g. base, gate, of an amplifier stage
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H03F2200/219 1 Follower transistors are added at the input of the amplifier, e.g. source or emitter followers
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H03F2200/222 1 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
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H03F2200/225 1 the input circuit of an amplifying stage comprising an LC-network
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H03F2200/228 1 A measuring circuit being coupled to the input of an amplifier
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H03F2200/231 1 the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
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H03F2200/234 1 the input amplifying stage being one or more operational amplifiers
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H03F2200/237 1 A parallel resonance being added in series in the input circuit, e.g. base, gate, of an amplifier stage
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H03F2200/24 1 the supply or bias voltage or current at the source side of a FET being continuously controlled by a controlling signal
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H03F2200/241 1 A parallel resonance being added in shunt in the input circuit, e.g. base, gate, of an amplifier stage
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H03F2200/243 1 A series resonance being added in series in the input circuit, e.g. base, gate, of an amplifier stage
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H03F2200/246 1 A series resonance being added in shunt in the input circuit, e.g. base, gate, of an amplifier stage, e.g. as a trap
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H03F2200/249 1 A switch coupled in the input circuit of an amplifier being controlled by a circuit, e.g. feedback circuitry being controlling the switch
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H03F2200/252 1 Multiple switches coupled in the input circuit of an amplifier are controlled by a circuit, e.g. feedback circuitry being controlling the switch
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H03F2200/255 1 Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
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H03F2200/258 1 the input of the amplifier has voltage limiting means
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H03F2200/261 1 Amplifier which being suitable for instrumentation applications
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H03F2200/264 1 An operational amplifier based integrator or transistor based integrator being used in an amplifying circuit
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H03F2200/267 1 A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
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H03F2200/27 1 A biasing circuit node being switched in an amplifier circuit
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H03F2200/271 1 the DC-isolation amplifier, e.g. chopper amplifier, modulation/demodulation amplifier, uses capacitive isolation means, e.g. capacitors
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H03F2200/273 1 the DC-isolation amplifier, e.g. chopper amplifier, modulation/demodulation amplifier, uses inductive isolation means, e.g. transformers
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H03F2200/276 1 the DC-isolation amplifier, e.g. chopper amplifier, modulation/demodulation amplifier, uses optical isolation means, e.g. optical couplers
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H03F2200/279 1 the level shifting stage between two amplifying stages being realised by an explicit differential amplifier
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H03F2200/282 1 the level shifting stage between two amplifying stages being realised by a diode
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H03F2200/285 1 the level shifting stage between two amplifying stages being realised by an emitter follower
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H03F2200/288 1 the level shifting stage between two amplifying stages being realised by a resistor or potentiometer
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H03F2200/291 1 the level shifting stage between two amplifying stages being realised by a source follower
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H03F2200/294 1 the amplifier being a low noise amplifier [LNA]
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H03F2200/297 1 the loading circuit of an amplifying stage comprising a capacitor
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H03F2200/301 1 the loading circuit of an amplifying stage comprising a coil
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H03F2200/303 1 the loading circuit of an amplifying stage comprising a diode or diode coupled transistor
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H03F2200/306 1 the loading circuit of an amplifying stage being a parallel resonance circuit
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H03F2200/309 1 the loading circuit of an amplifying stage being a series resonance circuit
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H03F2200/31 1 the switching power stage comprising circuitry for emulating the behaviour of a bootstrap diode
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H03F2200/312 1 the loading circuit of an amplifying stage comprising one or more switches
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H03F2200/315 1 the loading circuit of an amplifying stage comprising a transmission line
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H03F2200/318 1 A matching circuit being used as coupling element between two amplifying stages
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H03F2200/321 1 Use of a microprocessor in an amplifier circuit or its control circuit
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H03F2200/324 1 An amplitude modulator or demodulator being used in the amplifier circuit
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H03F2200/327 1 Amplitude shift keying modulation being used in an amplifying circuit
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H03F2200/33 1 Bridge form coupled amplifiers; H-form coupled amplifiers
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H03F2200/331 1 Sigma delta modulation being used in an amplifying circuit
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H03F2200/333 1 A frequency modulator or demodulator being used in the amplifier circuit
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H03F2200/336 1 A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
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H03F2200/339 1 Pulse amplitude modulation being used in an amplifying circuit
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H03F2200/342 1 Pulse code modulation being used in an amplifying circuit
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H03F2200/345 1 Pulse density modulation being used in an amplifying circuit
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H03F2200/348 1 Pulse frequency modulation being used in an amplifying circuit
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H03F2200/351 1 Pulse width modulation being used in an amplifying circuit
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H03F2200/354 1 the amplifier comprising MOS which are biased in the moderate inversion region
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H03F2200/357 1 the amplifier comprising MOS which are biased in the weak inversion region
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H03F2200/36 1 the amplifier comprising means for increasing the bandwidth
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H03F2200/361 1 Transistor with multiple collectors
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H03F2200/363 1 Transistor with multiple emitters
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H03F2200/366 1 Multiple MOSFETs are coupled in parallel
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H03F2200/369 1 A negative impedance circuit being added to an amplifier circuit
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H03F2200/372 1 Noise reduction and elimination in amplifier
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H03F2200/375 1 Circuitry to compensate the offset being present in an amplifier
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H03F2200/378 1 A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
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H03F2200/381 1 An active variable resistor, e.g. controlled transistor, being coupled in the output circuit of an amplifier to control the output
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H03F2200/384 1 Amplifier without output filter, i.e. directly connected to the load
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H03F2200/387 1 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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H03F2200/39 1 Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
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H03F2200/391 1 the output circuit of an amplifying stage comprising an LC-network
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H03F2200/393 1 A measuring circuit being coupled to the output of an amplifier
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H03F2200/396 1 the output of an amplifier can be switched on or off by a switch to couple the output signal to a load
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H03F2200/399 1 A parallel resonance being added in shunt in the output circuit, e.g. base, gate, of an amplifier stage
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H03F2200/402 1 A series resonance being added in shunt in the output circuit, e.g. base, gate, of an amplifier stage
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H03F2200/405 1 the output amplifying stage of an amplifier comprising more than three power stages
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H03F2200/408 1 the output amplifying stage of an amplifier comprising three power stages
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H03F2200/411 1 the output amplifying stage of an amplifier comprising two power stages
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H03F2200/414 1 A switch being coupled in the output circuit of an amplifier to switch the output on/off
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H03F2200/417 1 A switch coupled in the output circuit of an amplifier being controlled by a circuit
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H03F2200/42 1 the input to the amplifier being made by capacitive coupling means
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H03F2200/421 1 Multiple switches coupled in the output circuit of an amplifier are controlled by a circuit
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H03F2200/423 1 Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
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H03F2200/426 1 the amplifier comprising circuitry for protection against overload
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H03F2200/429 1 Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
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H03F2200/432 1 Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
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H03F2200/435 1 A peak detection being used in a signal measuring circuit in a controlling circuit of an amplifier
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H03F2200/438 1 Separate feedback of amplitude and phase signals being present
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H03F2200/441 1 Protection of an amplifier being implemented by clamping means
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H03F2200/444 1 Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
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H03F2200/447 1 the amplifier being protected to temperature influence
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H03F2200/45 1 the load of the amplifier being a capacitive element, e.g. CRT
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H03F2200/451 1 the amplifier being a radio frequency amplifier
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H03F2200/453 1 Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
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H03F2200/456 1 A scaled replica of a transistor being present in an amplifier
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H03F2200/459 1 Ripple reduction circuitry being used in an amplifying circuit
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H03F2200/462 1 the current being sensed
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H03F2200/465 1 Power sensing
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H03F2200/468 1 the temperature being sensed
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H03F2200/471 1 the voltage being sensed
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H03F2200/474 1 A current mirror being used as sensor
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H03F2200/477 1 Paralleled transistors are used as sensors
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H03F2200/48 1 the output of the amplifier being coupled out by a capacitor
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H03F2200/481 1 A resistor being used as sensor
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H03F2200/483 1 A shunting switch being paralleled to the sensor
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H03F2200/486 1 the current in the load of an amplifying stage being sensed by a torus
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H03F2200/489 1 A coil being added in the source circuit of a common source stage, e.g. as degeneration means
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H03F2200/492 1 A coil being added in the source circuit of a transistor amplifier stage as degenerating element
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H03F2200/495 1 A parallel resonance circuit being added in the source circuit of a FET amplifier
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H03F2200/498 1 A resistor being added in the source circuit of a transistor amplifier stage as degenerating element
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H03F2200/501 1 A series resonance circuit being added in the source circuit of a FET amplifier
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H03F2200/504 1 the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
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H03F2200/507 1 A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit
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H03F2200/51 1 Capacitor in positive feedback circuit of an amplifier circuit to bootstrap a resistor
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H03F2200/511 1 Many discrete supply voltages or currents or voltage levels can be chosen by a control signal in an IC-block amplifier circuit
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H03F2200/513 1 the amplifier being made for low supply voltages
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H03F2200/516 1 Some amplifier stages of an amplifier use supply voltages of different value
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H03F2200/519 1 the bias or supply voltage or current of the drain side of a FET amplifier being controlled to be on or off by a switch
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H03F2200/522 1 the bias or supply voltage or current of the gate side of a FET amplifier being controlled to be on or off by a switch
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H03F2200/525 1 the bias or supply voltage or current of the source side of a FET amplifier being controlled to be on or off by a switch
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H03F2200/528 1 the temperature dependence being controlled by referencing to the band gap
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H03F2200/531 1 the temperature difference between different chips being controlled
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H03F2200/534 1 Transformer coupled at the input of an amplifier
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H03F2200/537 1 A transformer being used as coupling element between two amplifying stages
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H03F2200/54 1 Two or more capacitor coupled amplifier stages in cascade
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H03F2200/541 1 Transformer coupled at the output of an amplifier
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H03F2200/543 1 A transmission line being used as coupling element between two amplifying stages
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H03F2200/546 1 A tunable capacitance being present in an amplifier circuit
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H03F2200/549 1 the amplifier comprising means to emulate the vacuum tube behaviour
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H03F2200/552 1 the amplifier being made for video applications
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H03F2200/555 1 A voltage generating circuit being realised for biasing different circuit elements
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H03F2200/57 1 Separate feedback of real and complex signals being present
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H03F2200/61 1 the cascode amplifier has more than one common gate stage
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H03F2200/63 1 the amplifier being suitable for CATV applications
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H03F2200/66 1 Clipping circuitry being present in an amplifier, i.e. the shape of the signal being modified
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H03F2200/69 1 the amplifier stage being a common drain coupled MOSFET, i.e. source follower
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H03F2200/72 1 the amplifier stage being a common gate configuration MOSFET
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H03F2200/75 1 the amplifier stage being a common source configuration MOSFET
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H03F2200/78 1 A comparator being used in a controlling circuit of an amplifier
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H03F2200/81 1 Inputs or outputs are crossed during a first switching time, not crossed during a second switching time
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H03F2200/84 1 A cross coupling circuit being realized by current mirrors
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H03F2200/87 1 the cross coupling circuit being realised only by MOSFETs
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H03F2200/91 1 the amplifier has a current mode topology
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H03F2200/93 1 Two or more transistors are coupled in a Darlington composite transistor configuration, all transistors being of the same type
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H03F2200/96 1 Two or more complementary transistors are coupled in a Darlington composite transistor configuration
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H03F2200/99 1 A diode as rectifier being used as a detecting circuit in an amplifying circuit
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H03F2201/00 0 Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
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H03F2201/32 1 Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
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H03F2201/3203 2 the amplifier comprising means for back off control in order to reduce distortion
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H03F2201/3206 2 Multiple channels are combined and amplified by only one amplifier
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H03F2201/3209 2 the amplifier comprising means for compensating memory effects
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H03F2201/3212 2 Using a control circuit to adjust amplitude and phase of a signal in a signal path
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H03F2201/3215 2 To increase the output power or efficiency
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H03F2201/3218 2 the main amplifier or error amplifier being a feedforward amplifier
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H03F2201/3221 2 Predistortion by overamplifying in a feedforward stage the distortion signal to have a combined main signal and "negative" distortion to form the predistorted signal for a further stage. so that after amplification in the further stage only the amplified main signal remains
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H03F2201/3224 2 Predistortion being done for compensating memory effects
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H03F2201/3227 2 Adaptive predistortion based on amplitude, envelope or power level feedback from the output of the main amplifier
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H03F2201/3231 2 Adaptive predistortion using phase feedback from the output of the main amplifier
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H03F2201/3233 2 Adaptive predistortion using lookup table, e.g. memory, RAM, ROM, LUT, to generate the predistortion
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H03F2201/3236 2 A generated signal, e.g. a pulse or an inverted synchronous signal, being added to avoid certain conditions, e.g. clipping
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H03F2203/00 0 Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
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H03F2203/20 1 Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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H03F2203/21 2 with semiconductor devices only
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H03F2203/211 3 using a combination of several amplifiers
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H03F2203/21103 4 An impedance adaptation circuit being added at the input of a power amplifier stage
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H03F2203/21106 4 An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
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H03F2203/21109 4 An input signal being distributed by switching to a plurality of paralleled power amplifiers
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H03F2203/21112 4 A filter circuit being added at the input of a power amplifier stage
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H03F2203/21115 4 An input signal dependant signal being measured by current measuring at the input of a power amplifier
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H03F2203/21118 4 An input signal dependant signal being measured by power measuring at the input of a power amplifier
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H03F2203/21121 4 An input signal dependant signal being measured by voltage measuring at the input of a power amplifier
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H03F2203/21124 4 A parallel resonance circuit being coupled at the input of a power amplifier
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H03F2203/21127 4 the input bias current of a power amplifier being controlled, e.g. by an active current source or a current mirror
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H03F2203/21131 4 the input bias voltage of a power amplifier being controlled, e.g. by a potentiometer or an emitter follower
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H03F2203/21133 4 A series resonance circuit being coupled at the input of a power amplifier
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H03F2203/21136 4 An input signal of a power amplifier being on/off switched
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H03F2203/21139 4 An impedance adaptation circuit being added at the output of a power amplifier stage
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H03F2203/21142 4 Output signals of a plurality of power amplifiers are parallel combined to a common output
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H03F2203/21145 4 Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
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H03F2203/21148 4 An output signal of a power amplifier being controlled by controlling current signal, e.g. by controlled current mirror
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H03F2203/21151 4 An output signal of a power amplifier being controlled by controlling power signal, e.g. by an inductive coupler
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H03F2203/21154 4 An output signal of a power amplifier being controlled by controlling voltage signal
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H03F2203/21157 4 A filter circuit being added at the output of a power amplifier stage
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H03F2203/21161 4 An output signal dependant signal being measured by current measuring at the output of a power amplifier
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H03F2203/21163 4 An output signal dependant signal being measured by power measuring, e.g. by an inductive coupler, at the output of a power amplifier
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H03F2203/21166 4 An output signal dependant signal being measured by voltage measuring at the output of a power amplifier
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H03F2203/21169 4 A parallel resonance circuit being coupled at the output of a power amplifier
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H03F2203/21172 4 A series resonance circuit being coupled at the output of a power amplifier
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H03F2203/21175 4 An output signal of a power amplifier being on/off switched
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H03F2203/21178 4 Power transistors are made by coupling a plurality of single transistors in parallel
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H03F2203/21181 4 the supply current of a power amplifier being continuously controlled, e.g. by controlling current sources or resistors
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H03F2203/21184 4 the supply current of a power amplifier being continuously measured, e.g. by a resistor, a current mirror, to produce a controlling signal
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H03F2203/21187 4 the supply current of a power amplifier being measured discontinuously in time, e.g. by sampling, to produce a controlling signal
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H03F2203/21191 4 the supply current of a power amplifier being switchable controlled, e.g. by choosing different current sources or resistors
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H03F2203/21193 4 the supply voltage of a power amplifier being continuously controlled, e.g. by an active potentiometer
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H03F2203/21196 4 the supply voltage of a power amplifier being switchable controlled
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H03F2203/30 1 Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
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H03F2203/30003 2 the SEPP amplifier stage comprising calibration possibility
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H03F2203/30006 2 the push and the pull stages of the SEPP amplifier are both current mirrors
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H03F2203/30009 2 the push and pull stages of the SEPP amplifier are both cascode current mirrors
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H03F2203/30012 2 the two SEPP amplifying transistors are Darlington composite transistors
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H03F2203/30015 2 An input signal dependent control signal controls the bias of an output stage in the SEPP
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H03F2203/30018 2 A series coupled active resistor and capacitor are coupled in a feedback circuit of a SEPP amplifier
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H03F2203/30021 2 A capacitor being coupled in a feedback circuit of a SEPP amplifier
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H03F2203/30024 2 the SEPP bias current being controlled by a control signal from a feedback circuit
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H03F2203/30027 2 the SEPP bias voltage being controlled by a control signal from a feedback circuit
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H03F2203/30031 2 A resistor being coupled as feedback circuit in the SEPP amplifier
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H03F2203/30033 2 A series coupled resistor and capacitor are coupled in a feedback circuit of a SEPP amplifier
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H03F2203/30036 2 A feedback circuit to stabilise the SEPP being used
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H03F2203/30039 2 the SEPP bias current being controlled by a control signal from a feedforward circuit
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H03F2203/30042 2 the SEPP bias voltage being controlled by a control signal from a feedforward circuit
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H03F2203/30045 2 the SEPP power transistors comprising measuring push or pull transistors to produce a controlling signal
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H03F2203/30048 2 the SEPP amplifier has multiple SEPP outputs from paralleled output stages coupled in one or more outputs
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H03F2203/30051 2 the SEPP amplifying transistors are composed of multiple coupled transistors
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H03F2203/30054 2 the SEPP power transistors are realised as paralleled cascode coupled transistors, i.e. the push or the pull transistors
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H03F2203/30057 2 the SEPP power transistors are realised as paralleled FETs, i.e. the push or the pull transistor
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H03F2203/30061 2 One or more current mirrors are used as bias circuit or stages for the push or pull stages
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H03F2203/30063 2 A differential amplifier being used in the bias circuit or in the control circuit of the SEPP-amplifier
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H03F2203/30066 2 A optical element being used in the bias circuit of the SEPP-amplifier
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H03F2203/30069 2 A SEPP amplifier with a reactive element in the bias circuit
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H03F2203/30072 2 the SEPP has a power supply switchable by a controlling signal derived from the input signal
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H03F2203/30075 2 the SEPP has a power supply switchable by a controlling signal derived from the output signal
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H03F2203/30078 2 A resistor being added in the pull stage of the SEPP amplifier
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H03F2203/30081 2 the pull transistor circuit comprising one or more capacitors
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H03F2203/30084 2 the pull circuit of the SEPP amplifier being a cascode circuit
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H03F2203/30087 2 Only the bias of the pull transistor of the SEPP being dynamically controlled by the input signal
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H03F2203/30091 2 the pull side of the SEPP amplifier has an extra drive follower stage to control this pull side
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H03F2203/30093 2 the pull side of the SEPP amplifier has an extra drive inverter stage to control this pull side
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H03F2203/30096 2 An op amp being used as extra drive amp for the pull side of the SEPP
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H03F2203/30099 2 the pull transistor being gated by a switching element
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H03F2203/30102 2 the pull transistor has a measuring transistor for controlling purposes
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H03F2203/30105 2 the pull transistor of the asymmetrically driven SEPP amplifier being a driven current mirror
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H03F2203/30108 2 the pull transistor of the SEPP amplifier being a cascode current mirror
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H03F2203/30111 2 A resistor being added in the push stage of the SEPP amplifier
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H03F2203/30114 2 the push transistor circuit comprising one or more capacitors
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H03F2203/30117 2 the push circuit of the SEPP amplifier being a cascode circuit
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H03F2203/30121 2 Only the bias of the push transistor of the SEPP being dynamically controlled by the input signal
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H03F2203/30123 2 the push side of the SEPP amplifier has an extra drive follower stage to control this push side
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H03F2203/30126 2 the push side of the SEPP amplifier has an extra drive inverter stage to control this push side
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H03F2203/30129 2 An op amp being used as extra drive amp for the push side of the SEPP
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H03F2203/30132 2 the push transistor being gated by a switching element
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H03F2203/30135 2 the push transistor has a measuring transistor for controlling purposes
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H03F2203/30138 2 the push transistor of the asymmetrically driven SEPP amplifier being a driven current mirror
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H03F2203/30141 2 the push transistor of the SEPP amplifier being a cascode current mirror
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H03F2203/30144 2 the SEPP comprising a reactive element in the amplifying circuits
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H03F2203/30147 2 the current sink of the push driven, i.e. source driven SEPP amplifier being a current mirror
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H03F2203/30151 2 the current sink of the push driven, i.e. source driven SEPP amplifier being a cascode current mirror
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H03F2203/30153 2 the current source of the pull driven, i.e. sink driven SEPP amplifier being a current mirror
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H03F2203/30156 2 the current source of the pull driven, i.e. sink driven SEPP amplifier being a cascode current mirror
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H03F2203/45 1 Indexing scheme relating to differential amplifiers
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H03F2203/45002 2 the addition of two signals being made by addition of two currents by coupling the outputs of two current mirrors in parallel
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H03F2203/45004 2 the addition of two signals being made by addition of two currents by coupling two current sources in parallel
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H03F2203/45006 2 the addition of two signals being made by two emitter or source coupled followers
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H03F2203/45008 2 the addition of two signals being made by a resistor addition circuit for producing the common mode signal
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H03F2203/45011 2 the addition of two signals being made in a source degeneration circuit of a current mirror for producing the common mode signal
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H03F2203/45012 2 the addition of two signals being made in a switched capacitor circuit for producing the common mode signal
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H03F2203/45014 2 the addition of two signals being made in the tail circuit of a differential amplifier for producing the common mode signal
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H03F2203/45016 2 the addition of two signals being made by paralleling two triode biased transistors for producing the common mode signal
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H03F2203/45018 2 the differential amplifier amplifying transistors have added cross couplings
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H03F2203/45021 2 One or more added diodes to the amplifying transistors in the differential amplifier
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H03F2203/45022 2 One or more added resistors to the amplifying transistors in the differential amplifier
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H03F2203/45024 2 the differential amplifier amplifying transistors are cascode coupled transistors
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H03F2203/45026 2 One or more current sources are added to the amplifying transistors in the differential amplifier
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H03F2203/45028 2 the differential amplifier amplifying transistors are folded cascode coupled transistors
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H03F2203/45031 2 the differential amplifier amplifying transistors are compositions of multiple transistors
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H03F2203/45032 2 the differential amplifier amplifying transistors are multiple paralleled transistors
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H03F2203/45034 2 One or more added reactive elements, capacitive or inductive elements, to the amplifying transistors in the differential amplifier
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H03F2203/45036 2 the differential amplifier amplifying transistors are single transistors
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H03F2203/45038 2 One or more current sources are added or changed as balancing means to reduce the offset of the dif amp
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H03F2203/45041 2 Fuses are blown to balance the dif amp to reduce the offset of the dif amp
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H03F2203/45042 2 One or more resistors are added or changed as balancing to reduce the offset of the dif amp
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H03F2203/45044 2 One or more switches are opened or closed to balance the dif amp to reduce the offset of the dif amp
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H03F2203/45046 2 the base current of the amplifying transistors of a dif amp being compensated for providing a greater input impedance of the amplifier
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H03F2203/45048 2 Calibrating and standardising a dif amp
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H03F2203/45051 2 Two or more differential amplifiers cascade coupled
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H03F2203/45052 2 the cascode stage of the cascode differential amplifier being controlled by a controlling signal, which controlling signal can also be the input signal
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H03F2203/45054 2 the cascode stage of the cascode dif amp being a current mirror
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H03F2203/45056 2 One or both transistors of the cascode stage of a differential amplifier being composed of more than one transistor
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H03F2203/45058 2 the cascode stage of the differential amplifier comprising a reactive element
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H03F2203/45061 2 the common mode reference signal being taken or deducted from the one or more inputs of the differential amplifier
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H03F2203/45062 2 the common mode signal, e.g. voltage or current being added to the cascode stage of the cascode or folded cascode differential amplifier
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H03F2203/45064 2 the resulting deducted common mode signal being added to the folding circuit of the folded differential amplifier
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H03F2203/45066 2 the resulting deducted common mode signal being added at the one or more inputs of the differential amplifier
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H03F2203/45068 2 the resulting deducted common mode signal being added at the one or more outputs of the differential amplifier
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H03F2203/45071 2 the resulting deducted common mode signal being added at the substrate or body regions of the components of the differential amplifier
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H03F2203/45072 2 the common mode voltage or current signal being added to the tail circuit of the differential amplifier
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H03F2203/45074 2 A comparator circuit compares the common mode signal to a reference before controlling the differential amplifier or related stages
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H03F2203/45076 2 the resulting deducted common mode signal being added to or controls the differential amplifier, and being a current signal
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H03F2203/45078 2 the common mode signal being taken or deducted from the one or more inputs of the differential amplifier
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H03F2203/45081 2 the common mode signal being level shifted before using it for controlling or adding
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H03F2203/45082 2 the common mode signal being taken or deducted from the one or more outputs of the differential amplifier
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H03F2203/45084 2 the common mode signal circuit comprising one or more inductive or capacitive elements, e.g. filter circuitry
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H03F2203/45086 2 the common mode signal being taken or deducted from the tail circuit of the differential amplifier
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H03F2203/45088 2 the resulting deducted common mode signal being added to or controls the differential amplifier, and being a voltage signal
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H03F2203/45091 2 Two complementary type differential amplifiers are paralleled, e.g. one of the p-type and one of the n-type
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H03F2203/45092 2 Two current sources bias one set of two common base transistors cascaded with two other common base transistors, the common base transistors being driven complementary
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H03F2203/45094 2 the dif amp being realized by coupling the emitters respectively sources of two common collector respectively drain transistors of a first type to the emitters respectively sources of two common base respectively gate transistors of a second complementary type
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H03F2203/45096 2 the difference of two signals being made by, e.g. combining two or more current mirrors, e.g. differential current mirror
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H03F2203/45098 2 Two current mirrors coupled in a subtracting configuration
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H03F2203/45101 2 Control of the DC level being present
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H03F2203/45102 2 A diode being used as clamping element at the input of the dif amp
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H03F2203/45104 2 A diode being used as clamping element at the loading circuit of the dif amp
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H03F2203/45106 2 A diode being used as clamping element at the output of the dif amp
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H03F2203/45108 2 A diode being used as level shifter between stages or in a follower in relation with a dif amp
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H03F2203/45111 2 Two dif amps of the same type are used one dif amp for each input signal
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H03F2203/45112 2 the biasing of the differential amplifier being controlled from the input or the output signal
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H03F2203/45114 2 the differential amplifier contains another differential amplifier in its feedback circuit
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H03F2203/45116 2 Feedback coupled to the input of the differential amplifier
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H03F2203/45118 2 At least one reactive element being added to at least one feedback circuit of a dif amp
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H03F2203/45121 2 A floating gate element being part of a dif amp
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H03F2203/45122 2 the folded cascode stage of the folded cascode differential amplifier being controlled by a controlling signal
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H03F2203/45124 2 the folded cascode stage of the folded cascode dif amp being a current mirror
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H03F2203/45126 2 One or both transistors of the folded cascode stage of a folded cascode dif amp are composed of more than one transistor
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H03F2203/45128 2 the folded cascode stage of the folded cascode dif amp contains a reactive element
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H03F2203/45131 2 A follower being added between the dif amp and other explicit stages in the amplifying circuit
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H03F2203/45132 2 A source follower using multiple single follower stages cascaded in a composed follower being added to the dif amp
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H03F2203/45134 2 the whole differential amplifier together with other coupled stages being fully differential realised
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H03F2203/45136 2 One differential amplifier in IC-block form being shown
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H03F2203/45138 2 Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
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H03F2203/45141 2 A cross coupled pair of transistors being added in the input circuit of a differential amplifier
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H03F2203/45142 2 At least one diode being added at the input of a dif amp
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H03F2203/45144 2 At least one follower being added at the input of a dif amp
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H03F2203/45146 2 At least one op amp being added at the input of a dif amp
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H03F2203/45148 2 At least one reactive element being added at the input of a dif amp
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H03F2203/45151 2 At least one resistor being added at the input of a dif amp
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H03F2203/45152 2 Balancing means being added at the input of a dif amp to reduce the offset of the dif amp
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H03F2203/45154 2 the bias at the input of the amplifying transistors being controlled
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H03F2203/45156 2 At least one capacitor being added at the input of a dif amp
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H03F2203/45158 2 One or more diodes coupled at the inputs of a dif amp as clamping elements
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H03F2203/45161 2 One or more diodes coupled at the inputs of a dif amp as level shifting circuit elements
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H03F2203/45162 2 A parallel resonance circuit being added in the one or more input circuits of the dif amp
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H03F2203/45164 2 A series resonance circuit being added in the one or more input circuits of the dif amp
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H03F2203/45166 2 Only one input of the dif amp being used for an input signal
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H03F2203/45168 2 A dif amp being used as input stage to one or more other non-differential stages
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H03F2203/45171 2 the input signal being switched to the one or more input terminals of the differential amplifier
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H03F2203/45172 2 A transformer being added at the input of the dif amp
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H03F2203/45174 2 the application of the differential amplifier being in an integrator circuit
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H03F2203/45176 2 A cross coupling circuit, e.g. consisting of two cross coupled transistors, being added in the load circuit of the amplifying transistors of a differential amplifier
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H03F2203/45178 2 the differential amplifier contains one or more extra resistors in the active load circuit
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H03F2203/45181 2 Compensation of unbalanced loading in dif amps, e.g. unbalancing by connecting unequal circuits on both load circuits of the dif amp
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H03F2203/45182 2 the differential amplifier contains one or more cascode current mirrors in the load
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H03F2203/45184 2 the differential amplifier has one or more cascode current sources in the load
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H03F2203/45186 2 the differential amplifier contains clamping components in the load circuit
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H03F2203/45188 2 the differential amplifier contains one or more current sources in the load
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H03F2203/45191 2 One or more diodes not belonging to a current mirror as loads of a dif amp
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H03F2203/45192 2 the differential amplifier contains current mirrors comprising diodes which act as a load for the differential amplifier
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H03F2203/45194 2 At least one active load circuit of the two load circuits in a differential amplifier being realised with a combination of more than one transistor
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H03F2203/45196 2 A differential amplifier with one or more parallel coupled LC-circuits as load
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H03F2203/45198 2 A parallel resonance circuit being added in the one or more load circuits of the dif amp
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H03F2203/45201 2 the differential amplifier contains one or more reactive elements, i.e. capacitive or inductive elements, in the load
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H03F2203/45202 2 the differential amplifier contains only resistors in the load
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H03F2203/45204 2 A series resonance circuit being added in the one or more load circuits of the dif amp
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H03F2203/45206 2 One or two switches are coupled in the loading circuit of the dif amp
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H03F2203/45208 2 the dif amp being of the long tail pair type, one current source being coupled to the common emitter of the amplifying transistors
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H03F2203/45211 2 the amplifying transistors have multiple collectors with a cross coupling
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H03F2203/45212 2 the differential amplifier being designed to have a reduced offset
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H03F2203/45214 2 Offset in a differential amplifier being reduced by control of the substrate voltage, the voltage being either fixed or variable
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H03F2203/45216 2 A cross coupling circuit being added at the output terminals of the amplifying transistors of a differential amplifier
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H03F2203/45218 2 Diode clamping means are present at the output of a differential amplifier
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H03F2203/45221 2 the output signal being taken from the two complementary outputs of the differential amplifier
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H03F2203/45222 2 the differential amplifier output being directly controlled by a feedback or feedforward circuit coupled at the output of the dif amp
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H03F2203/45224 2 One output of the differential amplifier being taken into consideration
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H03F2203/45226 2 the output signal being switched taken from the one or more output terminals of the differential amplifier
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H03F2203/45228 2 A transformer being added at the output or the load circuit of the dif amp
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H03F2203/45231 2 Two dif amps of the cascode type are paralleled at their input gates or bases
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H03F2203/45232 2 Two dif amps of the folded cascode type are paralleled at their input gates or bases
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H03F2203/45234 2 Two dif amps, one of them being of the cascade type and the other one of the folded cascade type, are paralleled at their input gates or bases
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H03F2203/45236 2 Two dif amps realised in MOS or JFET technology, one of them being of the p-channel type and the other one of the n-channel type, are coupled in parallel with their gates
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H03F2203/45238 2 Two dif amps realised in FET technology, the dif amps being either both of the NMOS type or both of the PMOS type, are coupled in parallel with their gates and their drains
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H03F2203/45241 2 Two dif amps realised in MOS or JFET technology, the dif amps being either both of the p-channel type or both of the n-channel type, are coupled in parallel with their gates
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H03F2203/45242 2 Two dif amps are paralleled at their inputs, the dif amps being of different types, e.g. one long tail type and one complementary or pi type
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H03F2203/45244 2 the differential amplifier contains one or more explicit bias circuits, e.g. to bias the tail current sources, to bias the load transistors
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H03F2203/45246 2 the dif amp being biased in the subthreshold region
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H03F2203/45248 2 the dif amp being designed for improving the slew rate
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H03F2203/45251 2 the dif amp has a cross coupling circuit in the source circuit of the amplifying transistors
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H03F2203/45252 2 Diodes are added in the source circuit of the amplifying FETs of the dif amp
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H03F2203/45254 2 A parallel resonance circuit being added in the one or more source circuits of the amplifying FETs of the dif amp
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H03F2203/45256 2 One or more reactive elements are added in the source circuit of the amplifying FETs of the dif amp
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H03F2203/45258 2 Resistors are added in the source circuit of the amplifying FETs of the dif amp
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H03F2203/45261 2 A series resonance circuit being added in the one or more source circuits of the amplifying FETs of the dif amp
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H03F2203/45262 2 the two amplifying FETs, amplifying two complementary input signals, are not source coupled, i.e. no tail being present
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H03F2203/45264 2 the dif amp comprising frequency or phase stabilisation means
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H03F2203/45266 2 the stage cascaded to the dif amp being an asymmetrical follower stage
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H03F2203/45268 2 A common gate stage being coupled at the one or more outputs of the dif amp
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H03F2203/45271 2 the output current being reduced by a transistor which being controlled by the input signal to sink current
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H03F2203/45272 2 the output current being increased by a transistor which being controlled by the input signal to source current
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H03F2203/45274 2 Level shifting stages are added to the differential amplifier at a position other than the one or more inputs of the dif amp
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H03F2203/45276 2 An op amp as stage being coupled to the output of a dif amp
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H03F2203/45278 2 Two SEPP stages are added to the differential amplifier, the outputs of the two SEPP stages being the two outputs of the whole amplifier
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H03F2203/45281 2 One SEPP output stage being added to the differential amplifier
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H03F2203/45282 2 the differential amplifier being coupled to a symmetrical follower output stage
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H03F2203/45284 2 Sensing the temperature dependence by a temperature dependant sensor, e.g. a resistor, a diode
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H03F2203/45286 2 the temperature dependence of a differential amplifier being controlled
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H03F2203/45288 2 Differential amplifier with circuit arrangements to enhance the transconductance
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H03F2203/45291 2 the active amplifying circuit [AAC] comprising balancing means
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H03F2203/45292 2 the AAC comprising biasing means controlled by the signal
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H03F2203/45294 2 the AAC comprising biasing means to stabilise itself
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H03F2203/45296 2 the AAC comprising one or more discrete capacitive elements, e.g. a transistor coupled as capacitor
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H03F2203/45298 2 the AAC comprising one or more combinations of discrete capacitor and resistor elements, e.g. active elements using a transistor as a capacitor or as a resistor
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H03F2203/45301 2 there are multiple cascaded folded or not folded common gate stages of a cascode dif amp
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H03F2203/45302 2 the common gate stage of a cascode dif amp being controlled
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H03F2203/45304 2 the common gate stage of a BIFET cascode dif amp being implemented fully by FETs
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H03F2203/45306 2 the common gate stage implemented as dif amp eventually for cascode dif amp
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H03F2203/45308 2 the common gate stage of a cascode dif amp being implemented as one mirror circuit
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H03F2203/45311 2 the common gate stage of a cascode dif amp being implemented by multiple transistors
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H03F2203/45312 2 there being only one common gate stage of a cascode dif amp
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H03F2203/45314 2 the AAC comprising clamping means, e.g. diodes
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H03F2203/45316 2 the AAC comprising one or more discrete inductive elements or coils
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H03F2203/45318 2 the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled
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H03F2203/45321 2 the common source stage of a BIFET cascode dif amp being implemented fully by FETs
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H03F2203/45322 2 One or more current sources are added to the AAC
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H03F2203/45324 2 the AAC comprising a Darlington transistor circuit
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H03F2203/45326 2 the AAC comprising one or more extra diodes, e.g. as level shifter, as diode coupled transistors
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H03F2203/45328 2 the AAC comprising one diode coupled AAC-transistor in a follower combination with the other AAC circuit part
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H03F2203/45331 2 the AAC comprising one or more diodes coupled as a shunt between the AAC-transistors in the AAC
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H03F2203/45332 2 the AAC comprising one or more capacitors as feedback circuit elements
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H03F2203/45334 2 the AAC comprising one or more dif amps as feedback circuit elements
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H03F2203/45336 2 the AAC comprising one or more resistors as feedback circuit elements
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H03F2203/45338 2 the AAC comprising one or more series circuits of a resistor and a capacitor as feedback circuit elements
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H03F2203/45341 2 the AAC comprising controlled floating gates
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H03F2203/45342 2 the AAC comprising control means on a back gate of the AAC
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H03F2203/45344 2 At least one of the AAC sub-circuits being a current mirror
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H03F2203/45346 2 the AAC comprising one or more FETs with multiple drains
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H03F2203/45348 2 the AAC comprising one or more FETs with multiple gates
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H03F2203/45351 2 the AAC comprising one or more FETs with multiple sources
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H03F2203/45352 2 the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
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H03F2203/45354 2 the AAC comprising offset means
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H03F2203/45356 2 the AAC comprising one or more op-amps, e.g. IC-blocks
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H03F2203/45358 2 the AAC comprising multiple transistors parallel coupled at their sources and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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H03F2203/45361 2 the AAC comprising multiple transistors parallel coupled at their drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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H03F2203/45362 2 the AAC comprising multiple transistors parallel coupled at their gates and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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H03F2203/45364 2 the AAC comprising multiple transistors parallel coupled at their gates and sources only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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H03F2203/45366 2 the AAC comprising multiple transistors parallel coupled at their gates only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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H03F2203/45368 2 the AAC comprising multiple transistors parallel coupled at their sources only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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H03F2203/45371 2 the AAC comprising parallel coupled multiple transistors at their source and gate and drain or at their base and emitter and collector, e.g. in a cascode dif amp, only those forming the composite common source transistor or the composite common emitter transistor respectively
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H03F2203/45372 2 the AAC comprising one or more potentiometers
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H03F2203/45374 2 the AAC comprising one or more discrete resistors
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H03F2203/45376 2 the AAC comprising one or more discrete resistors as shunts between collectors or drains
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H03F2203/45378 2 the AAC comprising saturation or cutoff avoiding means, e.g. as a feedback circuit
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H03F2203/45381 2 the AAC comprising multiple transistors coupled in shunt
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H03F2203/45382 2 the AAC comprising common gate stages in the source circuit of the AAC before the common source coupling
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H03F2203/45384 2 the AAC comprising common gate stages in the source circuit of the AAC before the common source coupling in which the common gate stage being controlled
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H03F2203/45386 2 the AAC comprising one or more coils in the source circuit
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H03F2203/45388 2 the AAC comprising diodes in the source circuit of the AAC before the common source coupling
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H03F2203/45391 2 the AAC comprising potentiometers in the source circuit of the AAC before the common source coupling
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H03F2203/45392 2 the AAC comprising resistors in the source circuit of the AAC before the common source coupling
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H03F2203/45394 2 the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
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H03F2203/45396 2 the AAC comprising one or more switches
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H03F2203/45398 2 the AAC comprising a voltage generating circuit as bias circuit for the AAC
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H03F2203/45401 2 the common mode controlling loop [CMCL] comprising a transistor resistor addition circuit
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H03F2203/45402 2 the CMCL comprising a buffered addition circuit, i.e. the signals are buffered before addition, e.g. by a follower
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H03F2203/45404 2 the CMCL comprising capacitors containing, not in parallel with the resistors, an addition circuit
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H03F2203/45406 2 the CMCL comprising a common source node of a long tail FET pair as an addition circuit
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H03F2203/45408 2 the CMCL comprising a short circuited differential output of a dif amp as an addition circuit
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H03F2203/45411 2 the CMCL comprising a diode addition circuit, e.g. using diode connected transistors
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H03F2203/45412 2 the CMCL comprising a folding circuit as addition circuit
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H03F2203/45414 2 the CMCL comprising a current mirror addition circuit
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H03F2203/45416 2 the CMCL comprising no addition of the dif signals to produce a common mode signal
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H03F2203/45418 2 the CMCL comprising a resistor addition circuit
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H03F2203/45421 2 the CMCL comprising a switched capacitor addition circuit
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H03F2203/45422 2 the CMCL comprising one or more capacitors not as integrating capacitor, e.g. for stability purposes
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H03F2203/45424 2 the CMCL comprising a comparator circuit
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H03F2203/45426 2 the CMCL comprising a comparator circuit with extra buffering means before comparison of the common mode signal, e.g. by a follower
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H03F2203/45428 2 the CMCL comprising a comparator circuit using a four inputs dif amp
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H03F2203/45431 2 the CMCL output control signal being a current signal
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H03F2203/45432 2 the CMCL output control signal being a current signal and being buffered before used to control
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H03F2203/45434 2 the CMCL output control signal being a voltage signal
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H03F2203/45436 2 the CMCL output control signal being a voltage signal and being buffered before used to control
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H03F2203/45438 2 the CMCL uses digital signals
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H03F2203/45441 2 the CMCL comprising an integrating circuit
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H03F2203/45442 2 the CMCL comprising multiple loops for the same stage or for different stages in the amplifier
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H03F2203/45444 2 the CMCL comprising a sample and hold circuit
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H03F2203/45446 2 there are two or more CMCLs
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H03F2203/45448 2 the common source circuit [CSC] comprising an addition circuit made by mirrors
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H03F2203/45451 2 the CSC comprising an addition circuit made by added current sources
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H03F2203/45452 2 the CSC comprising balancing means
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H03F2203/45454 2 the CSC comprising biasing means controlled by the input signal
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H03F2203/45456 2 the CSC comprising bias stabilisation means, e.g. DC-level stability, positive or negative temperature coefficient dependent control
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H03F2203/45458 2 the CSC comprising one or more capacitors
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H03F2203/45461 2 the CSC comprising one or more switched capacitors
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H03F2203/45462 2 the CSC comprising a cascode circuit
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H03F2203/45464 2 the CSC comprising one or more coils
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H03F2203/45466 2 the CSC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
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H03F2203/45468 2 the CSC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
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H03F2203/45471 2 the CSC comprising one or more extra current sources
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H03F2203/45472 2 the CSC comprising one or more diodes
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H03F2203/45474 2 the CSC comprising controlled one or more floating gates
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H03F2203/45476 2 the CSC comprising a mirror circuit
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H03F2203/45478 2 the CSC comprising a cascode mirror circuit
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H03F2203/45481 2 the CSC comprising only a direct connection to the supply voltage, no other components being present
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H03F2203/45482 2 the CSC comprising offset means
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H03F2203/45484 2 the CSC comprising one or more op-amps
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H03F2203/45486 2 the CSC comprising two or more paralleled transistors as current source
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H03F2203/45488 2 the CSC being a pi circuit and a capacitor being used at the place of the resistor
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H03F2203/45491 2 the CSC being a pi circuit and the resistor being implemented by one or more transistors
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H03F2203/45492 2 the CSC being a pi circuit and the resistor being implemented by one or more controlled transistors
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H03F2203/45494 2 the CSC comprising one or more potentiometers
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H03F2203/45496 2 the CSC comprising one or more extra resistors
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H03F2203/45498 2 the CSC comprising only resistors
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H03F2203/45501 2 the CSC comprising a L-C parallel resonance circuit
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H03F2203/45502 2 the CSC comprising a L-C series resonance circuit
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H03F2203/45504 2 the CSC comprising more than one switch
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H03F2203/45506 2 the CSC comprising only one switch
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H03F2203/45508 2 the CSC comprising a voltage generating circuit as bias circuit for the CSC
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H03F2203/45511 2 the feedback circuit [FBC] comprising one or more transistor stages, e.g. cascaded stages of the dif amp, and being coupled between the loading circuit [LC] and the input circuit [IC]
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H03F2203/45512 2 the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
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H03F2203/45514 2 the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
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H03F2203/45516 2 the FBC comprising a coil and being coupled between the LC and the IC
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H03F2203/45518 2 the FBC comprising one or more diodes and being coupled between the LC and the IC
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H03F2203/45521 2 the FBC comprising op amp stages, e.g. cascaded stages of the dif amp and being coupled between the LC and the IC
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H03F2203/45522 2 the FBC comprising one or more potentiometers
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H03F2203/45524 2 the FBC comprising one or more active resistors and being coupled between the LC and the IC
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H03F2203/45526 2 the FBC comprising a resistor-capacitor combination and being coupled between the LC and the IC
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H03F2203/45528 2 the FBC comprising one or more passive resistors and being coupled between the LC and the IC
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H03F2203/45531 2 the FBC comprising a parallel resonance circuit and being coupled between the LC and the IC
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H03F2203/45532 2 the FBC comprising a series resonance circuit and being coupled between the LC and the IC
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H03F2203/45534 2 the FBC comprising multiple switches and being coupled between the LC and the IC
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H03F2203/45536 2 the FBC comprising a switch and being coupled between the LC and the IC
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H03F2203/45538 2 the IC comprising balancing means, e.g. trimming means
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H03F2203/45541 2 the IC comprising dynamic biasing means, i.e. controlled by the input signal
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H03F2203/45542 2 the IC comprising bias stabilisation means, e.g. DC level stabilisation, and temperature coefficient dependent control, e.g. by DC level shifting
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H03F2203/45544 2 the IC comprising one or more capacitors, e.g. coupling capacitors
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H03F2203/45546 2 the IC comprising one or more capacitors feedback coupled to the IC
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H03F2203/45548 2 the IC comprising one or more capacitors as shunts to earth or as short circuit between inputs
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H03F2203/45551 2 the IC comprising one or more switched capacitors
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H03F2203/45552 2 the IC comprising clamping means, e.g. diodes
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H03F2203/45554 2 the IC comprising one or more coils
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H03F2203/45556 2 the IC comprising a common gate stage as input stage to the dif amp
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H03F2203/45558 2 the IC being coupled at the sources of the source coupled pair
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H03F2203/45561 2 the IC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
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H03F2203/45562 2 the IC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
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H03F2203/45564 2 the IC comprising one or more extra current sources
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H03F2203/45566 2 the IC comprising one or more dif stages in cascade with the dif amp
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H03F2203/45568 2 the IC comprising one or more diodes as shunt to the input leads
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H03F2203/45571 2 the IC comprising two diodes, e.g. Gilbert circuit
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H03F2203/45572 2 the IC comprising one or more Zener diodes to the input leads
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H03F2203/45574 2 the IC comprising four or more input leads connected to four or more AAC-transistors
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H03F2203/45576 2 the IC comprising input impedance adapting or controlling means
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H03F2203/45578 2 the IC comprising one or more diodes as level shifters
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H03F2203/45581 2 the IC comprising one or more resistors as level shifters
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H03F2203/45582 2 the IC comprising one or more voltage sources as level shifters
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H03F2203/45584 2 the IC comprising extra differentially coupled transistors for controlling purposes only
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H03F2203/45586 2 the IC comprising offset generating means
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H03F2203/45588 2 the IC comprising offset compensating means
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H03F2203/45591 2 the IC comprising one or more potentiometers
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H03F2203/45592 2 the IC comprising one or more buffer stages other than emitter or source followers between the input signal leads and input leads of the dif amp, e.g. inverter stages
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H03F2203/45594 2 the IC comprising one or more resistors, which are not biasing resistor
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H03F2203/45596 2 the IC comprising one or more biasing resistors
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H03F2203/45598 2 the IC comprising an input shunting circuit comprising a resistor and a capacitor in series
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H03F2203/45601 2 the IC comprising one or more passive resistors by feedback
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H03F2203/45602 2 the IC comprising one or more active resistors by feedback
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H03F2203/45604 2 the IC comprising a input shunting resistor
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H03F2203/45606 2 the IC comprising one or more parallel resonance circuits
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H03F2203/45608 2 the IC comprising one or more series resonance circuits
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H03F2203/45611 2 the IC comprising only one input signal connection lead for one phase of the signal
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H03F2203/45612 2 the IC comprising one or more input source followers as input stages in the IC
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H03F2203/45614 2 the IC comprising two cross coupled switches
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H03F2203/45616 2 the IC comprising more than one switch, which are not cross coupled
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H03F2203/45618 2 the IC comprising only one switch
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H03F2203/45621 2 the IC comprising a transformer for phase splitting the input signal
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H03F2203/45622 2 the IC comprising a voltage generating circuit
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H03F2203/45624 2 the LC comprising balancing means, e.g. trimming means
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H03F2203/45626 2 the LC comprising biasing means controlled by the input signal
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H03F2203/45628 2 the LC comprising bias stabilisation means, e.g. DC level stabilisation means, and temperature coefficient dependent control, e.g. DC level shifting means
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H03F2203/45631 2 the LC comprising one or more capacitors, e.g. coupling capacitors
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H03F2203/45632 2 the LC comprising one or more capacitors coupled to the LC by feedback
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H03F2203/45634 2 the LC comprising one or more switched capacitors
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H03F2203/45636 2 the LC comprising clamping means, e.g. diodes
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H03F2203/45638 2 the LC comprising one or more coils
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H03F2203/45641 2 the LC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
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H03F2203/45642 2 the LC, and possibly also cascaded stages following it, being (are) controlled by the common mode signal derived to control a dif amp
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H03F2203/45644 2 the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
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H03F2203/45646 2 the LC comprising an extra current source
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H03F2203/45648 2 the LC comprising two current sources, which are not cascode current sources
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H03F2203/45651 2 the LC comprising two cascode current sources
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H03F2203/45652 2 the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade
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H03F2203/45654 2 the LC comprising one or more extra diodes not belonging to mirrors
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H03F2203/45656 2 the LC comprising one diode of a current mirror, i.e. forming an asymmetrical load
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H03F2203/45658 2 the LC comprising two diodes of current mirrors
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H03F2203/45661 2 the LC comprising one or more controlled floating gates
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H03F2203/45662 2 the LC comprising inductive coupled loading elements
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H03F2203/45664 2 the LC comprising one or more cascaded inverter stages as output stage at one output of the dif amp circuit
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H03F2203/45666 2 the LC comprising two anti-phase controlled inverter circuits as output stages, e.g. fully differential
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H03F2203/45668 2 the LC comprising a level shifter circuit, which does not comprise diodes
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H03F2203/45671 2 the LC comprising one or more diodes as level shifter
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H03F2203/45672 2 the LC comprising one or more resistors as level shifter
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H03F2203/45674 2 the LC comprising one current mirror
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H03F2203/45676 2 the LC comprising one cascode current mirror
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H03F2203/45678 2 the LC comprising offset generating means
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H03F2203/45681 2 the LC comprising offset compensating means
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H03F2203/45682 2 the LC comprising one or more op-amps
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H03F2203/45684 2 the LC comprising one or more buffers or driving stages not being of the emitter respectively source follower type, between the output of the dif amp and the output stage
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H03F2203/45686 2 the LC comprising one or more potentiometers, which are not shunting potentiometers
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H03F2203/45688 2 the LC comprising one or more shunting potentiometers
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H03F2203/45691 2 the LC comprising one or more transistors as active loading resistors
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H03F2203/45692 2 the LC comprising one or more resistors in series with a capacitor coupled to the LC by feedback
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H03F2203/45694 2 the LC comprising more than one shunting resistor
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H03F2203/45696 2 the LC comprising more than two resistors
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H03F2203/45698 2 the LC comprising one or more resistors coupled to the LC by feedback (active or passive)
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H03F2203/45701 2 the LC comprising one resistor
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H03F2203/45702 2 the LC comprising two resistors
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H03F2203/45704 2 the LC comprising one or more parallel resonance circuits
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H03F2203/45706 2 the LC comprising one or more series resonance circuits
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H03F2203/45708 2 the LC comprising one SEPP circuit as output stage
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H03F2203/45711 2 the LC comprising two anti-phase controlled SEPP circuits as output stages, e.g. fully differential
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H03F2203/45712 2 the LC comprising a capacitor as shunt
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H03F2203/45714 2 the LC comprising a coil as shunt
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H03F2203/45716 2 the LC comprising a RC-series circuit as shunt, e.g. for stabilisation
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H03F2203/45718 2 the LC comprising a resistor as shunt
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H03F2203/45721 2 the LC comprising only an output circuit for one phase of the signal
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H03F2203/45722 2 the LC comprising one or more source followers, as post buffer or driver stages, in cascade in the LC
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H03F2203/45724 2 the LC comprising two cross coupled switches
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H03F2203/45726 2 the LC comprising more than one switch, which are not cross coupled
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H03F2203/45728 2 the LC comprising one switch
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H03F2203/45731 2 the LC comprising a transformer
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H03F2203/45732 2 the LC comprising a voltage generating circuit
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H03F2203/50 1 Indexing scheme relating to amplifiers in which input being applied to, or output being derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
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H03F2203/5003 2 the sources of two source followers are differentially coupled
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H03F2203/5006 2 the input signal being capacitively coupled to the gate of the source follower
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H03F2203/5009 2 the output signal being capacitively coupled to the source of the source follower
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H03F2203/5012 2 the source follower has a controlled source circuit, the controlling signal being derived from the drain circuit of the follower
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H03F2203/5015 2 the source follower has a controlled source circuit, the controlling signal being derived from the gate circuit of the follower
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H03F2203/5018 2 the source follower has a controlled source circuit, the controlling signal being derived from the source circuit of the follower
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H03F2203/5021 2 the source follower has a controlled source circuit
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H03F2203/5024 2 the source follower has a controlled source circuit, the source circuit being controlled via a capacitor, i.e. AC-controlled
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H03F2203/5027 2 the source follower has a current mirror output circuit in its source circuit
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H03F2203/5031 2 the source circuit of the follower being a current source
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H03F2203/5033 2 Two source followers are controlled at their inputs by a differential signal
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H03F2203/5036 2 the source follower has a resistor in its source circuit
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H03F2203/5039 2 the source circuit of the follower has one or more capacitors between source and supply
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H03F2203/5042 2 the source circuit of the follower has one or more coils between source and supply
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H03F2203/5045 2 the source follower has a level shifter between source and output, e.g. a diode-connected transistor
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H03F2203/72 1 Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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H03F2203/7203 2 the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias current in the amplifier
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H03F2203/7206 2 the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
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H03F2203/7209 2 the gated amplifier being switched from a first band to a second band
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H03F2203/7212 2 the gated amplifier being switched on or off by switching off or on a feedback control loop of the amplifier
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H03F2203/7215 2 the gated amplifier being switched on or off by a switch at the input of the amplifier
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H03F2203/7218 2 the gated amplifier being switched on or off by clamping by a switch at the input of the amplifier
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H03F2203/7221 2 the gated amplifier being switched on or off by a switch at the output of the amplifier
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H03F2203/7224 2 the gated amplifier being switched on or off by clamping by a switch at the output of the amplifier
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H03F2203/7227 2 the gated amplifier being switched on or off by a switch in the supply circuit of the amplifier
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H03F2203/7231 2 the gated amplifier being switched on or off by putting into cascade or not, by choosing between amplifiers by one or more switch(es)
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H03F2203/7233 2 the gated amplifier, switched on or off by putting into parallel or not, by choosing between amplifiers by one or more switch(es), being impedance adapted by switching an adapted passive network
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H03F2203/7236 2 the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
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H03F2203/7239 2 the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
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H03G CONTROL OF AMPLIFICATION (impedance networks, e.g. attenuators, H03H; control of transmission in lines H04B3/04)
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H03G1/00 0 Details of arrangements for controlling amplification {(for arrangements combined with means for generating a controlling signal, or these means per se, see the other main groups of H03G)}
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H03G1/0005 1 {Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal}
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H03G1/0011 2 {the device being at least one of the amplifying tubes of the amplifier}
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H03G1/0017 2 {the device being at least one of the amplifying solid state elements of the amplifier}
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H03G1/0023 3 {in emitter-coupled or cascode amplifiers (H03G1/0029 takes precedence)}
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H03G1/0029 3 {using FETs}
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H03G1/0035 2 {using continuously variable impedance elements}
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H03G1/0041 3 {using thermistors}
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H03G1/0047 3 {using photo-electric elements}
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H03G1/0052 3 {using diodes}
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H03G1/0058 4 {PIN-diodes}
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H03G1/0064 4 {Variable capacitance diodes}
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H03G1/007 3 {using FET type devices}
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H03G1/0076 3 {using galvanomagnetic elements}
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H03G1/0082 3 {using bipolar transistor-type devices}
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H03G1/0088 2 {using discontinuously variable devices, e.g. switch-operated}
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H03G1/0094 3 {using switched capacitors}
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H03G1/02 1 Remote control of amplification, tone, or bandwidth (remote control in general G05, G08; combined with remote tuning or selection of resonant circuits H03J)
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H03G1/04 1 Modifications of control circuit to reduce distortion caused by control (modifications to reduce influence of variations of internal impedance of amplifying elements caused by control H03F1/08)
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H03G3/00 0 Gain control in amplifiers or frequency changers {without distortion of the input signal}(gated amplifiers H03F3/72; peculiar to television receivers H04N)
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H03G3/001 1 {Digital control of analog signals}
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H03G3/002 1 {Control of digital or coded signals (H03G3/3089 take precedence)}
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H03G3/004 1 {Control by varying the supply voltage}
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H03G3/005 1 {Control by a pilot signal (H03G3/001 takes precedence)}
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H03G3/007 1 {Control dependent on the supply voltage}
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H03G3/008 1 {Control by switched capacitors}
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H03G3/02 1 Manually-operated control {(H03G3/001 and H03G3/002 take precedence)}
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H03G3/04 2 in untuned amplifiers
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H03G3/06 3 having discharge tubes
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H03G3/08 4 incorporating negative feedback
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H03G3/10 3 having semiconductor devices
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H03G3/12 4 incorporating negative feedback
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H03G3/14 2 in frequency-selective amplifiers
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H03G3/16 3 having discharge tubes
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H03G3/18 3 having semiconductor devices
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H03G3/20 1 Automatic control ({H03G3/005 takes precedence } ; combined with volume compression or expansion H03G7/00)
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H03G3/22 2 in amplifiers having discharge tubes
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H03G3/225 3 {controlling or controlled by the (local) oscillators of a (super)heterodyne receiver}
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H03G3/24 3 Control dependent upon ambient noise level or sound level
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H03G3/26 3 Muting amplifier when no signal is present {or when only weak signals are present, or caused by the presence of noise, e.g. squelch systems}
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H03G3/28 4 in frequency-modulation receivers {; in angle-modulation receivers}
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H03G3/30 2 in amplifiers having semiconductor devices
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H03G3/3005 3 {in amplifiers suitable for low-frequencies, e.g. audio amplifiers (H03G3/32, H03G3/34 take precedence)}
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H03G3/301 4 {the gain being continuously variable}
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H03G3/3015 5 {using diodes or transistors}
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H03G3/3021 5 {by varying the duty cycle}
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H03G3/3026 4 {the gain being discontinuously variable, e.g. controlled by switching}
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H03G3/3031 5 {using switched capacitors}
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H03G3/3036 3 {in high-frequency amplifiers or in frequency-changers (H03G3/3052, H03G3/32, H03G3/34 take precedence)}
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H03G3/3042 4 {in modulators, frequency-changers, transmitters or power amplifiers (transmission power control in bidirectional transmission systems H04W52/04)}
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H03G3/3047 5 {for intermittent signals, e.g. burst signals}
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H03G3/3052 3 {in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver (H03G3/32, H03G3/34 take precedence)}
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H03G3/3057 4 {using at least one diode as controlling device}
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H03G3/3063 4 {using at least one transistor as controlling device, the transistor being used as a variable impedance device}
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H03G3/3068 4 {Circuits generating control signals for both R.F. and I.F. stages}
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H03G3/3073 4 {Circuits generating control signals when no carrier is present, or in SSB, CW or pulse receivers}
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H03G3/3078 4 {Circuits generating control signals for digitally modulated signals}
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H03G3/3084 3 {in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves (H03G3/32, H03G3/34 take precedence)}
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H03G3/3089 3 {Control of digital or coded signals}
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H03G3/3094 3 {in parametric amplifiers (H03G3/32, H03G3/34 take precedence)}
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H03G3/32 3 the control being dependent upon ambient noise level or sound level
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H03G3/34 3 Muting amplifier when no signal is present {or when only weak signals are present, or caused by the presence of noise signals, e.g. squelch systems}
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H03G3/341 4 {Muting when no signals or only weak signals are present (H03G3/344, H03G3/345 take precedence)}
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H03G3/342 4 {Muting when some special characteristic of the signal is sensed which distinguishes it from noise, e.g. using speech detector (H03G3/344, H03G3/345 take precedence)}
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H03G3/344 4 {Muting responsive to the amount of noise (noise squelch) (H03G3/345 takes precedence)}
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H03G3/345 4 {Muting during a short period of time when noise pulses are detected, i.e. blanking (H03G3/348 takes precedence)}
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H03G3/347 5 {dependent on the rate of noise pulses}
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H03G3/348 4 {Muting in response to a mechanical action or to power supply variations, e.g. during tuning; Click removal circuits}
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H03G5/00 0 Tone control or bandwidth control in amplifiers
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H03G5/005 1 {of digital signals (see provisionally also H03G5/00)}
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H03G5/02 1 Manually-operated control (variable bandpass or bandstop filters H03H7/12)
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H03G5/025 2 {Equalizers; Volume or gain control in limited frequency bands}
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H03G5/04 2 in untuned amplifiers
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H03G5/06 3 having discharge tubes
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H03G5/08 4 incorporating negative feedback
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H03G5/10 3 having semiconductor devices
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H03G5/12 4 incorporating negative feedback
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H03G5/14 2 in frequency-selective amplifiers
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H03G5/16 1 Automatic control
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H03G5/165 2 {Equalizers; Volume or gain control in limited frequency bands}
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H03G5/18 2 in untuned amplifiers
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H03G5/20 3 having discharge tubes
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H03G5/22 3 having semiconductor devices
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H03G5/24 2 in frequency-selective amplifiers
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H03G5/26 3 having discharge tubes
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H03G5/28 3 having semiconductor devices
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H03G7/00 0 Volume compression or expansion in amplifiers {(frequency dependent H03G9/00)}
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H03G7/001 1 {without controlling loop (H03G7/007, H03G7/02, H03G7/06 take precedence)}
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H03G7/002 1 {in untuned or low-frequency amplifiers, e.g. audio amplifiers (H03G7/007, H03G7/001, H03G7/008, H03G7/02, H03G7/06 take precedence)}
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H03G7/004 2 {using continuously variable impedance devices}
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H03G7/005 2 {using discontinuously variable devices, e.g. switch-operated}
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H03G7/007 1 {of digital or coded signals (see provis. also H03G7/00)}
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H03G7/008 1 {Control by a pilot signal (H03G7/007, H03G7/02, H03G7/06 take precedence)}
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H03G7/02 1 having discharge tubes
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H03G7/04 2 incorporating negative feedback
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H03G7/06 1 having semiconductor devices
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H03G7/08 2 incorporating negative feedback
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H03G9/00 0 Combinations of two or more types of control, e.g. gain control and tone control
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H03G9/005 1 {of digital or coded signals}
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H03G9/02 1 in untuned amplifiers (combined tone controls for low and high frequencies H03G5/00 {; compression or expansion combined with volume control H03G7/00})
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H03G9/025 2 {frequency-dependent volume compression or expansion, e.g. multiple-band systems (H03G9/10, H03G9/18 take precedence)}
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H03G9/04 2 having discharge tubes
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H03G9/06 3 for gain control and tone control
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H03G9/08 4 incorporating negative feedback
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H03G9/10 3 for tone control and volume expansion or compression
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H03G9/12 2 having semiconductor devices
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H03G9/14 3 for gain control and tone control
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H03G9/16 4 incorporating negative feedback
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H03G9/18 3 for tone control and volume expansion or compression
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H03G9/20 1 in frequency-selective amplifiers
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H03G9/22 2 having discharge tubes
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H03G9/24 2 having semiconductor devices
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H03G9/26 1 in untuned amplifying stages as well as in frequency-selective amplifying stages (gain control in both stages H03G3/00; tone control or bandwidth control H03G5/00 {; compression or expansion combined with volume control H03G7/00})
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H03G9/28 2 all amplifying stages having discharge tubes
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H03G9/30 2 all amplifying stages having semiconductor devices
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H03G11/00 0 Limiting amplitude; Limiting rate of change of amplitude {; Clipping in general}
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H03G11/002 1 {without controlling loop (H03G11/004, H03G11/006, H03G11/008, H03G11/02, H03G11/04, H03G11/06, H03G11/08 take precedence; see provisional also H03G11/00)}
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H03G11/004 1 {using discharge tubes (H03G11/008 takes precedence)}
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H03G11/006 1 {in circuits having distributed constants (H03G11/008 takes precedence)}
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H03G11/008 1 {of digital or coded signals (see provis. also H03G11/00, H03G11/02)}
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H03G11/02 1 by means of diodes ({H03G11/008, } H03G11/04, H03G11/06, H03G11/08 take precedence)
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H03G11/025 2 {in circuits having distributed constants}
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H03G11/04 1 Limiting level dependent on strength of signal; Limiting level dependent on strength of carrier on which signal is modulated {(H03G11/008 takes precedence)}
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H03G11/06 1 {Limiters of angle-modulated signals}; such limiters combined with discriminators (H03G11/00 takes precedence; discriminators having an inherent limiting action H03D3/00)
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H03G11/08 1 Limiting rate of change of amplitude {(H03G11/008 takes precedence)}
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H03G99/00 0 Subject matter not provided for in other groups of this subclass
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H03G2201/00 0 Indexing scheme relating to subclass H03G
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H03G2201/10 1 Gain control characterised by the type of controlled element
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H03G2201/103 2 being an amplifying element
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H03G2201/106 2 being attenuating element
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H03G2201/20 1 Gain control characterized by the position of the detection
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H03G2201/202 2 being in baseband
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H03G2201/204 2 being in intermediate frequency
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H03G2201/206 2 being in radio frequency
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H03G2201/208 2 being in power supply of the amplifier
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H03G2201/30 1 Gain control characterized by the type of controlled signal
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H03G2201/302 2 being baseband signal
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H03G2201/305 2 being intermediate frequency signal
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H03G2201/307 2 being radio frequency signal
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H03G2201/40 1 Combined gain and bias control
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H03G2201/50 1 Gain control characterized by the means of gain control
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H03G2201/502 2 by switching impedance in feedback loop
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H03G2201/504 2 by summing selected parallel amplifying paths, i.e. more amplifying/attenuating paths summed together
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H03G2201/506 2 by selecting one parallel amplifying path
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H03G2201/508 2 by using look-up tables
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H03G2201/60 1 Gain control characterized by varying time constants in control loop
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H03G2201/603 2 time constant being continuous
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H03G2201/606 2 time constant being discrete
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H03G2201/70 1 Gain control characterized by the gain control parameter
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H03G2201/702 2 being frequency, e.g. frequency deviations
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H03G2201/704 2 being number of multiplexed channels
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H03G2201/706 2 being quality indicator, e.g. BER,C/I
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H03G2201/708 2 being temperature
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H03H IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing G01R; arrangements for producing a reverberation or echo sound G10K15/08; impedance networks or resonators consisting of distributed impedances, e.g. of the waveguide type, H01P; control of amplification, e.g. bandwidth control of amplifiers, H03G; tuning resonant circuits, e.g. tuning coupled resonant circuits, H03J; networks for modifying the frequency characteristics of communication systems H04B)
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H03H1/00 0 Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network (constructional details of electromechanical transducers H03H9/00)
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H03H1/0007 1 {of radio frequency interference filters}
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H03H2001/0014 1 {Capacitor filters, i.e. capacitors whose parasitic inductance is of relevance to consider it as filter}
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H03H2001/0021 1 {Constructional details}
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H03H2001/0028 2 {RFI filters with housing divided in two bodies}
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H03H2001/0035 2 {Wound magnetic core}
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H03H2001/0042 2 {Wound, ring or feed-through type capacitor}
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H03H2001/005 2 {Wound, ring or feed-through type inductor}
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H03H2001/0057 2 {comprising magnetic material}
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H03H2001/0064 2 {comprising semiconductor material}
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H03H2001/0071 2 {comprising zig-zag inductor}
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H03H2001/0078 2 {comprising spiral inductor on a substrate}
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H03H2001/0085 2 {Multilayer, e.g. LTCC, HTCC, green sheets (inside PCB filters H05K)}
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H03H2001/0092 1 {Inductor filters, i.e. inductors whose parasitic capacitance is of relevance to consider it as filter}
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H03H1/02 1 of RC networks, e.g. integrated networks
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H03H2/00 0 Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00
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H03H2/001 1 {comprising magnetostatic wave network elements}
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H03H2/003 1 {comprising optical fibre network elements (optical elements per se G02B, G02F; transmission systems using light waves H04B10/00)}
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H03H2/005 1 {Coupling circuits between transmission lines or antennas and transmitters, receivers or amplifiers}
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H03H2/006 2 {Transmitter or amplifier output circuits}
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H03H2/008 2 {Receiver or amplifier input circuits}
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H03H3/00 0 Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
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H03H3/007 1 for the manufacture of electromechanical resonators or networks
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H03H2003/0071 2 {of bulk acoustic wave and surface acoustic wave elements in the same process}
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H03H3/0072 2 {of microelectro-mechanical resonators or networks (micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C)}
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H03H3/0073 3 {Integration with other electronic structures}
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H03H3/0075 3 {Arrangements or methods specially adapted for testing microelecro-mechanical resonators or networks}
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H03H3/0076 3 {for obtaining desired frequency or temperature coefficients}
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H03H3/0077 4 {by tuning of resonance frequency}
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H03H3/0078 5 {involving adjustment of the transducing gap}
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H03H3/013 2 for obtaining desired frequency or temperature coefficient ({H03H3/0076} H03H3/04, H03H3/10 take precedence)
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H03H3/02 2 for the manufacture of piezo-electric or electrostrictive resonators or networks (H03H3/08 takes precedence)
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H03H2003/021 3 {the resonators or networks being of the air-gap type}
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H03H2003/022 3 {the resonators or networks being of the cantilever type}
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H03H2003/023 3 {the resonators or networks being of the membrane type}
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H03H2003/025 3 {the resonators or networks comprising an acoustic mirror}
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H03H2003/026 3 {the resonators or networks being of the tuning fork type}
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H03H2003/027 3 {the resonators or networks being of the microelectro-mechanical [MEMS] type}
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H03H2003/028 3 {for obtaining desired values of other parameters}
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H03H3/04 3 for obtaining desired frequency or temperature coefficient
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H03H2003/0407 4 {Temperature coefficient}
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H03H2003/0414 4 {Resonance frequency}
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H03H2003/0421 5 {Modification of the thickness of an element}
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H03H2003/0428 6 {of an electrode}
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H03H2003/0435 6 {of a piezoelectric layer}
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H03H2003/0442 6 {of a non-piezoelectric layer}
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H03H2003/045 5 {Modification of the area of an element}
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H03H2003/0457 6 {of an electrode}
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H03H2003/0464 5 {operating on an additional circuit element, e.g. a passive circuit element connected to the resonator}
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H03H2003/0471 5 {of a plurality of resonators at different frequencies}
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H03H2003/0478 5 {in a process for mass production}
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H03H2003/0485 5 {during the manufacture of a cantilever}
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H03H2003/0492 5 {during the manufacture of a tuning-fork}
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H03H3/06 2 for the manufacture of magnetostrictive resonators or networks
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H03H3/08 2 for the manufacture of resonators or networks using surface acoustic waves
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H03H3/10 3 for obtaining desired frequency or temperature coefficient
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H03H5/00 0 One-port networks comprising only passive electrical elements as network components
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H03H5/003 1 {comprising distributed impedance elements together with lumped impedance elements}
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H03H5/006 1 {comprising simultaneously tunable inductance and capacitance}
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H03H5/02 1 without voltage- or current-dependent elements
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H03H5/10 2 comprising at least one element with prescribed temperature coefficient
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H03H5/12 1 with at least one voltage- or current-dependent element
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H03H7/00 0 Multiple-port networks comprising only passive electrical elements as network components (receiver input circuits H04B1/18; networks simulating a length of communication cable H04B3/40)
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H03H7/002 1 {Gyrators}
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H03H7/004 1 {Capacitive coupling circuits not otherwise provided for}
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H03H2007/006 1 {MEMS}
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H03H2007/008 2 {the MEMS being trimmable}
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H03H7/01 1 Frequency selective two-port networks
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H03H7/0107 2 {Non-linear filters}
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H03H7/0115 2 {comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence)}
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H03H7/0123 2 {comprising distributed impedance elements together with lumped impedance elements}
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H03H2007/013 2 {Notch or bandstop filters}
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H03H7/0138 2 {Electrical filters or coupling circuits}
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H03H7/0146 3 {Coupling circuits between two tubes, not otherwise provided for}
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H03H7/0153 2 {Electrical filters; Controlling thereof}
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H03H7/0161 3 {Bandpass filters (H03H7/12 takes precedence)}
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H03H7/0169 4 {Intermediate frequency filters}
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H03H7/0176 5 {witout magnetic core}
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H03H7/0184 5 {with ferromagnetic core}
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H03H2007/0192 2 {Complex filters}
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H03H7/03 2 comprising means for compensation of loss
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H03H7/06 2 including resistors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence)
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H03H7/065 3 Parallel T-filters
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H03H7/07 3 Bridged T-filters
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H03H7/075 2 Ladder networks, e.g. electric wave filters
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H03H7/09 2 Filters comprising mutual inductance
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H03H7/12 2 Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency (H03H7/09 takes precedence; automatic control of bandwidth in amplifiers H03G5/16)
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H03H7/13 2 using electro-optic elements
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H03H7/17 2 {Structural details of sub-circuits of frequency selective networks}
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H03H7/1708 3 {Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path (H03H7/07 takes precedence)}
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H03H7/1716 3 {Comprising foot-point elements}
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H03H7/1725 4 {Element to ground being common to different shunt paths, i.e. Y-structure}
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H03H7/1733 4 {Element between different shunt or branch paths (H03H7/425 takes precedence)}
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H03H7/1741 3 {Comprising typical LC combinations, irrespective of presence and location of additional resistors (when resistors are present, also classify in H03H7/06 - H03H7/07)}
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H03H7/175 4 {Series LC in series path (H03H7/1783 takes precedence)}
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H03H7/1758 4 {Series LC in shunt or branch path (H03H7/1791 takes precedence)}
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H03H7/1766 4 {Parallel LC in series path (H03H7/1783 takes precedence)}
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H03H7/1775 4 {Parallel LC in shunt or branch path (H03H7/1791 takes precedence)}
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H03H7/1783 4 {Combined LC in series path}
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H03H7/1791 4 {Combined LC in shunt or branch path}
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H03H7/18 1 Networks for phase shifting
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H03H7/185 2 {comprising distributed impedance elements together with lumped impedance elements}
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H03H7/19 2 Two-port phase shifters providing a predetermined phase shift, e.g. "all-pass" filters
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H03H7/20 2 Two-port phase shifters providing an adjustable phase shift
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H03H7/21 2 providing two or more phase shifted output signals, e.g. n-phase output
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H03H7/24 1 Frequency- independent attenuators
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H03H7/25 2 comprising an element controlled by an electric or magnetic variable (H03H7/27 takes precedence)
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H03H7/251 3 {the element being a thermistor}
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H03H7/253 3 {the element being a diode}
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H03H7/255 4 {the element being a PIN diode}
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H03H7/256 4 {the element being a VARACTOR diode}
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H03H7/258 3 {using a galvano-magnetic device}
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H03H7/27 2 comprising a photo-electric element
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H03H7/30 1 Time-delay networks {(analogue shift registers G11C27/04)}
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H03H7/32 2 with lumped inductance and capacitance
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H03H7/325 3 {Adjustable networks}
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H03H7/34 2 with lumped and distributed reactance
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H03H7/345 3 {Adjustable networks}
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H03H7/38 1 Impedance-matching networks
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H03H7/383 2 {comprising distributed impedance elements together with lumped impedance elements}
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H03H2007/386 2 {Multiple band impedance matching}
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H03H7/40 2 Automatic matching of load impedance to source impedance
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H03H7/42 1 Balance/unbalance networks
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H03H7/422 2 {comprising distributed impedance elements together with lumped impedance elements}
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H03H7/425 2 {Balance-balance networks}
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H03H7/427 3 {Common-mode filters (H02J3/01 and H02M1/126 takes precedence)}
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H03H7/46 1 Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source (for use in multiplex transmission systems H04J1/00)
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H03H7/461 2 {particularly adapted for use in common antenna systems}
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H03H7/463 2 {Duplexers}
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H03H7/465 3 {having variable circuit topology, e.g. including switches}
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H03H7/466 2 {particularly adapted as input circuit for receivers}
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H03H7/468 2 {particularly adapted as coupling circuit between transmitters and antennas}
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H03H7/48 1 Networks for connecting several sources or loads, working on the same frequency or frequency band, to a common load or source (phase shifters providing two or more output signals H03H7/21)
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H03H7/482 2 {particularly adapted for use in common antenna systems}
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H03H7/485 2 {particularly adapted as input circuit for receivers}
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H03H7/487 2 {particularly adapted as coupling circuit between transmitters and antennas}
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H03H7/52 1 One-way transmission networks, i.e. unilines
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H03H7/54 1 Modifications of networks to reduce influence of variations of temperature
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H03H9/00 0 Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators (making single crystals C30B; selection of materials thereof H01L; electromechanical transducers H04R; piezo-electric, electrostrictive or magnetostrictive devices per se H10N30/00)
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H03H9/0004 1 {Impedance-matching networks (H03H9/145 takes precedence)}
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H03H9/0009 2 {using surface acoustic wave devices}
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H03H9/0014 2 {using bulk acoustic wave devices}
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H03H2009/0019 1 {Surface acoustic wave multichip}
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H03H9/0023 1 {Balance-unbalance or balance-balance networks}
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H03H9/0028 2 {using surface acoustic wave devices}
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H03H9/0033 3 {having one acoustic track only}
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H03H9/0038 4 {the balanced terminals being on the same side of the track}
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H03H9/0042 4 {the balanced terminals being on opposite sides of the track}
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H03H9/0047 3 {having two acoustic tracks (H03H9/008, H03H9/0085 take precedence)}
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H03H9/0052 4 {being electrically cascaded}
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H03H9/0057 5 {the balanced terminals being on the same side of the tracks}
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H03H9/0061 5 {the balanced terminals being on opposite sides of the tracks}
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H03H9/0066 4 {being electrically parallel}
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H03H9/0071 5 {the balanced terminals being on the same side of the tracks}
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H03H9/0076 5 {the balanced terminals being on opposite sides of the tracks}
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H03H9/008 3 {having three acoustic tracks (H03H9/0085 takes precedence)}
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H03H9/0085 3 {having four acoustic tracks}
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H03H9/009 4 {Lattice filters}
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H03H9/0095 2 {using bulk acoustic wave devices}
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H03H9/02 1 Details
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H03H9/02007 2 {of bulk acoustic wave devices}
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H03H9/02015 3 {Characteristics of piezoelectric layers, e.g. cutting angles}
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H03H9/02023 4 {consisting of quartz}
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H03H9/02031 4 {consisting of ceramic}
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H03H9/02039 4 {consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite}
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H03H9/02047 3 {Treatment of substrates}
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H03H9/02055 4 {of the surface including the back surface}
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H03H9/02062 3 {Details relating to the vibration mode}
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H03H9/0207 4 {the vibration mode being harmonic}
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H03H9/02078 4 {the vibration mode being overmoded}
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H03H9/02086 3 {Means for compensation or elimination of undesirable effects}
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H03H9/02094 4 {of adherence}
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H03H9/02102 4 {of temperature influence (cutting angles H03H9/02015)}
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H03H9/0211 4 {of reflections}
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H03H9/02118 4 {of lateral leakage between adjacent resonators}
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H03H9/02125 4 {of parasitic elements}
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H03H9/02133 4 {of stress}
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H03H9/02141 4 {of electric discharge due to pyroelectricity}
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H03H9/02149 4 {of ageing changes of characteristics, e.g. electro-acousto-migration}
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H03H9/02157 3 {Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness}
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H03H2009/02165 2 {Tuning}
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H03H2009/02173 3 {of film bulk acoustic resonators [FBAR]}
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H03H2009/02181 4 {by application of heat from a heat source}
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H03H2009/02188 4 {Electrically tuning}
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H03H2009/02196 5 {operating on the FBAR element, e.g. by direct application of a tuning DC voltage}
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H03H2009/02204 5 {operating on an additional circuit element, e.g. applying a tuning DC voltage to a passive circuit element connected to the resonator}
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H03H2009/02212 4 {Magnetically tuning}
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H03H9/0222 2 {of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices}
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H03H9/02228 2 {Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer}
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H03H9/02236 2 {of surface skimming bulk wave devices}
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H03H9/02244 2 {of microelectro-mechanical resonators}
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H03H2009/02251 3 {Design}
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H03H9/02259 3 {Driving or detection means}
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H03H2009/02267 4 {having dimensions of atomic scale, e.g. involving electron transfer across vibration gap}
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H03H9/02275 4 {Comb electrodes}
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H03H2009/02283 3 {Vibrating means}
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H03H2009/02291 4 {Beams}
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H03H2009/02299 5 {Comb-like, i.e. the beam comprising a plurality of fingers or protrusions along its length}
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H03H2009/02307 5 {Dog-bone-like structure, i.e. the elongated part of the "bone" is doubly clamped}
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H03H2009/02314 5 {forming part of a transistor structure}
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H03H2009/02322 5 {Material}
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H03H2009/0233 4 {comprising perforations}
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H03H9/02338 3 {Suspension means}
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H03H2009/02346 4 {Anchors for ring resonators}
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H03H2009/02354 5 {applied along the periphery, e.g. at nodal points of the ring}
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H03H9/02362 4 {Folded-flexure}
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H03H2009/0237 5 {applied at the center}
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H03H9/02377 5 {Symmetric folded-flexure}
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H03H2009/02385 4 {Anchors for square resonators, i.e. resonators comprising a square vibrating membrane}
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H03H9/02393 3 {Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor}
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H03H9/02401 4 {by annealing}
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H03H9/02409 4 {by application of a DC-bias voltage (H03H9/02417 takes precedence)}
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H03H9/02417 4 {involving adjustment of the transducing gap}
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H03H9/02425 5 {by electrostatically pulling the beam}
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H03H9/02433 3 {Means for compensation or elimination of undesired effects}
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H03H2009/0244 4 {Anchor loss}
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H03H9/02448 4 {of temperature influence}
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H03H2009/02456 4 {Parasitic elements or effects, e.g. parasitic capacitive coupling between input and output}
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H03H2009/02464 4 {Pull-in}
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H03H2009/02472 4 {Stiction}
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H03H2009/0248 4 {Strain}
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H03H2009/02488 3 {Vibration modes}
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H03H2009/02496 4 {Horizontal, i.e. parallel to the substrate plane}
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H03H2009/02503 5 {Breath-like, e.g. Lam? mode, wine-glass mode}
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H03H2009/02511 4 {Vertical, i.e. perpendicular to the substrate plane}
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H03H2009/02519 4 {Torsional}
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H03H2009/02527 4 {Combined}
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H03H9/02535 2 {of surface acoustic wave devices}
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H03H9/02543 3 {Characteristics of substrate, e.g. cutting angles}
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H03H9/02551 4 {of quartz substrates}
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H03H9/02559 4 {of lithium niobate or lithium-tantalate substrates}
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H03H9/02566 4 {of semiconductor substrates}
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H03H9/02574 4 {of combined substrates, multilayered substrates, piezo-electrical layers on not-piezo- electrical substrate}
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H03H9/02582 4 {of diamond substrates}
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H03H9/0259 4 {of langasite substrates}
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H03H9/02598 4 {of langatate substrates}
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H03H9/02606 4 {of langanite substrates}
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H03H9/02614 3 {Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves}
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H03H9/02622 4 {of the surface, including back surface}
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H03H9/02629 4 {of the edges}
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H03H9/02637 3 {Details concerning reflective or coupling arrays}
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H03H9/02645 4 {Waffle-iron or dot arrays}
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H03H9/02653 4 {Grooves or arrays buried in the substrate}
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H03H9/02661 5 {being located inside the interdigital transducers}
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H03H9/02669 4 {Edge reflection structures, i.e. resonating structures without metallic reflectors, e.g. Bleustein-Gulyaev-Shimizu [BGS], shear horizontal [SH], shear transverse [ST], Love waves devices}
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H03H9/02677 5 {having specially shaped edges, e.g. stepped, U-shaped edges}
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H03H9/02685 4 {Grating lines having particular arrangements}
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H03H9/02692 5 {Arched grating lines}
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H03H9/027 6 {U-shaped grating lines}
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H03H9/02708 5 {Shifted grating lines}
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H03H9/02716 5 {Tilted, fan shaped or slanted grating lines}
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H03H9/02724 5 {Comb like grating lines}
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H03H9/02732 6 {Bilateral comb like grating lines}
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H03H9/0274 5 {Intra-transducers grating lines}
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H03H9/02748 6 {Dog-legged reflectors}
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H03H9/02755 6 {Meandering floating or grounded grating lines}
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H03H9/02763 5 {Left and right side electrically coupled reflectors}
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H03H9/02771 5 {Reflector banks}
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H03H9/02779 4 {Continuous surface reflective arrays}
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H03H9/02787 5 {having wave guide like arrangements}
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H03H9/02795 4 {Multi-strip couplers as track changers}
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H03H9/02803 4 {Weighted reflective structures}
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H03H9/02811 5 {Chirped reflective or coupling arrays}
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H03H9/02818 3 {Means for compensation or elimination of undesirable effects}
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H03H9/02826 4 {of adherence}
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H03H9/02834 4 {of temperature influence (cut angles H03H9/02543)}
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H03H9/02842 4 {of reflections (H03H9/6406 takes precedence)}
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H03H9/0285 5 {of triple transit echo}
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H03H9/02858 4 {of wave front distortion}
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H03H9/02866 4 {of bulk wave excitation and reflections}
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H03H9/02874 4 {of direct coupling between input and output transducers}
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H03H9/02881 4 {of diffraction of wave beam}
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H03H9/02889 4 {of influence of mass loading}
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H03H9/02897 4 {of strain or mechanical damage, e.g. strain due to bending influence}
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H03H9/02905 4 {Measures for separating propagation paths on substrate}
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H03H9/02913 4 {Measures for shielding against electromagnetic fields (shielding of electrical components in general H05K9/00)}
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H03H9/02921 4 {Measures for preventing electric discharge due to pyroelectricity}
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H03H9/02929 4 {of ageing changes of characteristics, e.g. electro-acousto-migration}
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H03H9/02937 4 {of chemical damage, e.g. corrosion}
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H03H9/02944 4 {of ohmic loss}
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H03H9/02952 4 {of parasitic capacitance}
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H03H9/0296 3 {Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties}
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H03H9/02968 4 {with optical devices (mounting in enclosures H03H9/12)}
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H03H9/02976 4 {with semiconductor devices}
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H03H9/02984 3 {Protection measures against damaging}
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H03H9/02992 3 {Details of bus bars, contact pads or other electrical connections for finger electrodes}
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H03H9/05 2 Holders; Supports
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H03H9/0504 3 {for bulk acoustic wave devices}
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H03H9/0509 4 {consisting of adhesive elements}
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H03H9/0514 4 {consisting of mounting pads or bumps}
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H03H9/0519 5 {for cantilever (H03H9/1021 takes precedence)}
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H03H9/0523 5 {for flip-chip mounting}
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H03H9/0528 4 {consisting of clips}
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H03H9/0533 4 {consisting of wire}
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H03H9/0538 3 {Constructional combinations of supports or holders with electromechanical or other electronic elements}
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H03H9/0542 4 {consisting of a lateral arrangement (H03H9/0566 takes precedence)}
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H03H9/0547 4 {consisting of a vertical arrangement (H03H9/0566 takes precedence)}
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H03H9/0552 5 {the device and the other elements being mounted on opposite sides of a common substrate}
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H03H9/0557 5 {the other elements being buried in the substrate}
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H03H9/0561 5 {consisting of a multilayered structure}
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H03H9/0566 4 {for duplexers}
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H03H9/0571 5 {including bulk acoustic wave [BAW] devices}
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H03H9/0576 5 {including surface acoustic wave [SAW] devices}
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H03H9/058 3 {for surface acoustic wave devices}
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H03H9/0585 4 {consisting of an adhesive layer}
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H03H9/059 4 {consisting of mounting pads or bumps}
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H03H9/0595 3 {the holder support and resonator being formed in one body}
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H03H9/08 3 Holders with means for regulating temperature
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H03H9/09 3 Elastic or damping supports
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H03H9/10 3 Mounting in enclosures {(constructional combinations of enclosure with electromechanical and other electronic elements H03H9/0538)}
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H03H9/1007 4 {for bulk acoustic wave [BAW] devices}
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H03H9/1014 5 {the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device}
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H03H9/1021 6 {the BAW device being of the cantilever type}
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H03H9/1028 6 {the BAW device being held between spring terminals}
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H03H9/1035 5 {the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device}
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H03H9/1042 5 {the enclosure being defined by a housing formed by a cavity in a resin}
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H03H9/105 5 {the enclosure being defined by a cover cap mounted on an element forming part of the BAW device}
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H03H9/1057 4 {for microelectro-mechanical devices}
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H03H9/1064 4 {for surface acoustic wave [SAW] devices}
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H03H9/1071 5 {the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device}
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H03H9/1078 5 {the enclosure being defined by a foil covering the non-active sides of the SAW device}
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H03H9/1085 5 {the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device}
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H03H9/1092 5 {the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's}
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H03H9/12 4 for networks with interaction of optical and acoustic waves
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H03H9/125 2 Driving means, e.g. electrodes, coils
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H03H9/13 3 for networks consisting of piezo-electric or electrostrictive materials (H03H9/145 takes precedence)
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H03H9/131 4 {consisting of a multilayered structure}
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H03H9/132 4 {characterized by a particular shape}
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H03H9/133 4 {for electromechanical delay lines or filters}
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H03H9/135 3 for networks consisting of magnetostrictive materials (H03H9/145 takes precedence)
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H03H9/145 3 for networks using surface acoustic waves
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H03H9/14502 4 {Surface acoustic wave [SAW] transducers for a particular purpose}
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H03H9/14505 5 {Unidirectional SAW transducers}
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H03H9/14508 5 {Polyphase SAW transducers}
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H03H9/14511 5 {SAW transducers for non-piezoelectric substrates}
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H03H9/14514 5 {Broad band transducers}
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H03H9/14517 4 {Means for weighting}
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H03H9/1452 5 {by finger overlap length, apodisation}
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H03H9/14523 5 {Capacitive tap weighted transducers}
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H03H9/14526 5 {Finger withdrawal}
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H03H9/14529 5 {Distributed tap}
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H03H9/14532 6 {Series weighting; Transverse weighting}
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H03H9/14535 6 {Position weighting}
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H03H9/14538 4 {Formation}
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H03H9/14541 5 {Multilayer finger or busbar electrode}
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H03H9/14544 4 {Transducers of particular shape or position (weighting H03H9/14517)}
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H03H9/14547 5 {Fan shaped; Tilted; Shifted; Slanted; Tapered; Arched; Stepped finger transducers}
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H03H9/1455 5 {constituted of N parallel or series transducers}
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H03H9/14552 5 {comprising split fingers}
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H03H9/14555 5 {Chirped transducers (H03H9/6406 takes precedence)}
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H03H9/14558 5 {Slanted, tapered or fan shaped transducers (H03H9/14561, H03H9/14564 take precedence)}
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H03H9/14561 5 {Arched, curved or ring shaped transducers}
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H03H9/14564 5 {Shifted fingers transducers}
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H03H9/14567 6 {Stepped-fan shaped transducers}
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H03H9/1457 5 {Transducers having different finger widths}
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H03H9/14573 5 {Arrow type transducers}
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H03H9/14576 5 {Transducers whereby only the last fingers have different characteristics with respect to the other fingers, e.g. different shape, thickness or material, split finger}
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H03H9/14579 6 {the last fingers having a different shape}
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H03H9/14582 6 {the last fingers having a different pitch}
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H03H9/14585 6 {the last fingers being split}
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H03H9/14588 5 {Horizontally-split transducers}
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H03H9/14591 5 {Vertically-split transducers}
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H03H9/14594 5 {Plan-rotated or plan-tilted transducers}
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H03H9/14597 4 {Matching SAW transducers to external electrical circuits}
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H03H9/15 1 Constructional features of resonators consisting of piezo-electric or electrostrictive material (H03H9/25 takes precedence)
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H03H2009/155 2 {using MEMS techniques}
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H03H9/17 2 having a single resonator (crystal tuning forks H03H9/21)
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H03H9/171 3 {implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type}
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H03H9/172 4 {Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume}
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H03H9/173 5 {Air-gaps}
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H03H9/174 5 {Membranes}
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H03H9/175 5 {Acoustic mirrors}
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H03H9/176 3 {consisting of ceramic material (H03H9/177, H03H9/178 take precedence)}
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H03H9/177 3 {of the energy-trap type}
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H03H9/178 3 {of a laminated structure of multiple piezoelectric layers with inner electrodes}
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H03H9/19 3 consisting of quartz
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H03H9/205 2 having multiple resonators (crystal tuning forks H03H9/21)
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H03H9/21 2 Crystal tuning forks
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H03H9/215 3 consisting of quartz
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H03H9/22 1 Constructional features of resonators consisting of magnetostrictive material
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H03H9/24 1 Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive
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H03H9/2405 2 {of microelectro-mechanical resonators}
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H03H2009/241 3 {Bulk-mode MEMS resonators}
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H03H2009/2415 4 {with concave shape [CBAR]}
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H03H2009/2421 4 {with I shape [IBAR]}
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H03H9/2426 3 {in combination with other electronic elements}
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H03H9/2431 3 {Ring resonators}
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H03H9/2436 3 {Disk resonators}
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H03H2009/2442 3 {Square resonators}
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H03H9/2447 3 {Beam resonators (H03H9/2468 takes precedence)}
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H03H9/2452 4 {Free-free beam resonators}
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H03H9/2457 4 {Clamped-free beam resonators}
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H03H9/2463 4 {Clamped-clamped beam resonators}
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H03H9/2468 3 {Tuning fork resonators}
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H03H9/2473 4 {Double-Ended Tuning Fork [DETF] resonators}
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H03H9/2478 4 {Single-Ended Tuning Fork resonators}
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H03H9/2484 5 {with two fork tines, e.g. Y-beam cantilever}
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H03H9/2489 5 {with more than two fork tines}
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H03H9/2494 4 {H-shaped, i.e. two tuning forks with common base}
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H03H9/25 1 Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)}
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H03H9/30 1 Time-delay networks
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H03H9/36 2 with non-adjustable delay time (H03H9/40, H03H9/42 take precedence)
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H03H9/38 2 with adjustable delay time (H03H9/40, H03H9/42 take precedence)
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H03H9/40 2 Frequency dependent delay lines, e.g. dispersive delay lines (H03H9/42 takes precedence)
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H03H9/42 2 using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)}
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H03H9/423 3 {with adjustable delay time}
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H03H9/426 3 {Magneto-elastic surface waves}
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H03H9/44 3 Frequency dependent delay lines, e.g. dispersive delay lines
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H03H9/46 1 Filters (multiple-port electromechanical filters H03H9/70)
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H03H9/462 2 {Microelectro-mechanical filters}
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H03H9/465 3 {in combination with other electronic elements}
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H03H9/467 3 {Post-fabrication trimming of parameters, e.g. center frequency}
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H03H9/48 2 Coupling means therefor
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H03H9/485 3 {for microelectro-mechanical filters}
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H03H9/50 3 Mechanical coupling means
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H03H9/505 4 {for microelectro-mechanical filters}
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H03H9/52 3 Electric coupling means
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H03H9/525 4 {for microelectro-mechanical filters}
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H03H9/54 2 comprising resonators of piezo-electric or electrostrictive material (H03H9/64 takes precedence)
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H03H9/542 3 {including passive elements (H03H9/545 takes precedence)}
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H03H9/545 3 {including active elements}
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H03H9/547 3 {Notch filters, e.g. notch BAW or thin film resonator filters}
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H03H9/56 3 Monolithic crystal filters
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H03H9/562 4 {comprising a ceramic piezoelectric layer}
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H03H9/564 4 {implemented with thin-film techniques}
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H03H9/566 4 {Electric coupling means therefor (H03H9/0095 takes precedence)}
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H03H9/568 5 {consisting of a ladder configuration}
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H03H9/58 3 Multiple crystal filters
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H03H9/581 4 {comprising ceramic piezoelectric layers}
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H03H9/582 4 {implemented with thin-film techniques}
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H03H9/583 5 {comprising a plurality of piezoelectric layers acoustically coupled}
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H03H9/584 6 {Coupled Resonator Filters [CFR]}
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H03H9/585 6 {Stacked Crystal Filters [SCF]}
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H03H9/586 5 {Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume}
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H03H9/587 6 {Air-gaps}
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H03H9/588 6 {Membranes}
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H03H9/589 6 {Acoustic mirrors}
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H03H9/60 4 Electric coupling means therefor {(H03H9/0095 takes precedence)}
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H03H9/605 5 {consisting of a ladder configuration}
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H03H9/62 2 comprising resonators of magnetostrictive material (H03H9/64 takes precedence)
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H03H9/64 2 using surface acoustic waves
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H03H9/6403 3 {Programmable filters}
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H03H9/6406 3 {Filters characterised by a particular frequency characteristic}
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H03H9/6409 4 {SAW notch filters}
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H03H9/6413 4 {SAW comb filters}
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H03H9/6416 4 {SAW matched filters, e.g. surface acoustic wave compressors, chirped or coded surface acoustic wave filters}
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H03H9/642 5 {SAW transducers details for remote interrogation systems, e.g. surface acoustic wave transducers details for ID-tags (remote interrogation systems per se G06K7/10009, G01S13/74)}
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H03H9/6423 3 {Means for obtaining a particular transfer characteristic}
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H03H9/6426 4 {Combinations of the characteristics of different transducers}
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H03H9/643 4 {the transfer characteristic being determined by reflective or coupling array characteristics}
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H03H9/6433 4 {Coupled resonator filters}
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H03H9/6436 5 {having one acoustic track only}
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H03H9/644 5 {having two acoustic tracks}
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H03H9/6443 6 {being acoustically coupled}
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H03H9/6446 7 {by floating multistrip couplers (H03H9/645, H03H9/6453 take precedence)}
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H03H9/645 7 {by grating reflectors overlapping both tracks}
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H03H9/6453 7 {by at least an interdigital transducer overlapping both tracks}
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H03H9/6456 6 {being electrically coupled}
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H03H9/6459 7 {via one connecting electrode}
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H03H9/6463 8 {the tracks being electrically cascaded}
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H03H9/6466 9 {each track containing more than two transducers}
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H03H9/6469 7 {via two connecting electrodes}
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H03H9/6473 8 {the electrodes being electrically interconnected}
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H03H9/6476 8 {the tracks being electrically parallel}
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H03H9/6479 5 {Capacitively coupled SAW resonator filters}
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H03H9/6483 5 {Ladder SAW filters}
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H03H9/6486 5 {having crossing or intersecting acoustic tracks, e.g. intersection in a perpendicular or diagonal orientation}
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H03H9/6489 3 {Compensation of undesirable effects}
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H03H9/6493 4 {Side lobe suppression}
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H03H9/6496 4 {Reducing ripple in transfer characteristic}
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H03H9/66 1 Phase shifters
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H03H9/68 2 using surface acoustic waves
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H03H9/70 1 Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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H03H9/703 2 {Networks using bulk acoustic wave devices}
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H03H9/706 3 {Duplexers}
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H03H9/72 2 Networks using surface acoustic waves
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H03H9/725 3 {Duplexers}
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H03H9/74 1 Multiple-port networks for connecting several sources or loads, working on the same frequency or frequency band, to a common load or source (networks for phase shifting H03H9/66)
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H03H9/76 2 Networks using surface acoustic waves
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H03H11/00 0 Networks using active elements
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H03H11/02 1 Multiple-port networks
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H03H11/025 2 {using current conveyors}
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H03H11/04 2 Frequency selective two-port networks
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H03H11/0405 3 {Non-linear filters}
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H03H2011/0411 4 {Rank order or median filters}
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H03H11/0416 3 {using positive impedance converters (H03H11/08 takes precedence)}
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H03H11/0422 3 {using transconductance amplifiers, e.g. gmC filters}
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H03H11/0427 4 {Filters using a single transconductance amplifier; Filters derived from a single transconductor filter, e.g. by element substitution, cascading, parallel connection (H03H11/0433 - H03H11/0472 take precedence)}
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H03H11/0433 4 {Two integrator loop filters (H03H11/0455 takes precedence)}
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H03H11/0438 5 {Tow-Thomas biquad}
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H03H11/0444 4 {Simulation of ladder networks}
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H03H11/045 5 {Leapfrog structures}
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H03H11/0455 4 {Multiple integrator loop feedback filters}
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H03H11/0461 4 {Current mode filters}
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H03H11/0466 4 {Filters combining transconductance amplifiers with other active elements, e.g. operational amplifiers, transistors, voltage conveyors}
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H03H11/0472 4 {Current or voltage controlled filters}
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H03H2011/0477 3 {using current feedback operational amplifiers}
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H03H2011/0483 3 {using operational transresistance amplifiers [OTRA]}
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H03H2011/0488 3 {Notch or bandstop filters}
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H03H2011/0494 3 {Complex filters}
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H03H11/06 3 comprising means for compensation of loss
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H03H11/08 3 using gyrators
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H03H11/10 3 using negative impedance converters (H03H11/08 takes precedence)
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H03H11/11 3 {using current conveyors}
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H03H11/12 3 using amplifiers with feedback ({H03H11/0422} , H03H11/08, H03H11/10 take precedence)
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H03H11/1204 4 {Distributed RC filters}
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H03H11/1208 4 {comprising an electromechanical resonator}
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H03H11/1213 4 {using transistor amplifiers (H03H11/1204 takes precedence; parallel-T filters H03H11/1295)}
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H03H11/1217 4 {using a plurality of operational amplifiers (H03H11/1204 takes precedence; parallel-T filters H03H11/1295)}
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H03H11/1221 5 {Theory; Synthesis (H03H11/1226 - H03H11/1252 take precedence)}
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H03H11/1226 5 {Filters using operational amplifier poles}
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H03H11/123 5 {Modifications to reduce sensitivity}
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H03H11/1234 5 {Modifications to reduce detrimental influences of amplifier imperfections, e.g. limited gain-bandwith product, limited input impedance}
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H03H11/1239 5 {Modifications to reduce influence of variations of temperature}
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H03H11/1243 5 {Simulation of ladder networks}
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H03H11/1247 6 {Leapfrog structures}
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H03H11/1252 5 {Two integrator-loop-filters}
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H03H11/1256 6 {Tow-Thomas biquad}
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H03H11/126 4 {using a single operational amplifier (H03H11/1204 takes precedence; parallel-T filters H03H11/1295)}
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H03H11/1265 5 {Synthesis (H03H11/1269 - H03H11/1282 take precedence)}
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H03H11/1269 5 {Filters using the operational amplifier pole}
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H03H11/1273 5 {Modifications to reduce sensitivity}
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H03H11/1278 5 {Modifications to reduce detrimental influences of amplifier imperfections, e.g. limited gain-bandwith product, limited input impedance}
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H03H11/1282 5 {Modifications to reduce influence of variations of temperature}
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H03H11/1286 5 {Sallen-Key biquad}
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H03H11/1291 4 {Current or voltage controlled filters}
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H03H11/1295 4 {Parallel-T filters}
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H03H11/14 3 using electro-optic devices
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H03H11/16 2 Networks for phase shifting
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H03H11/18 3 Two-port phase shifters providing a predetermined phase shift, e.g. "all-pass" filters
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H03H11/20 3 Two-port phase shifters providing an adjustable phase shift
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H03H11/22 3 providing two or more phase shifted output signals, e.g. n-phase output
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H03H11/24 2 Frequency-independent attenuators
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H03H11/245 3 {using field-effect transistor}
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H03H11/26 2 Time-delay networks (analogue shift registers G11C27/04)
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H03H11/265 3 {with adjustable delay}
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H03H11/28 2 Impedance matching networks
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H03H11/30 3 Automatic matching of source impedance to load impedance
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H03H11/32 2 Balance-unbalance networks
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H03H11/34 2 Networks for connecting several sources or loads working on different frequencies or frequency bands, to a common load or source (for use in multiplex transmission systems H04J1/00)
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H03H11/342 3 {particularly adapted for use in common antenna systems}
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H03H11/344 3 {Duplexers}
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H03H11/346 3 {particularly adapted as input circuit for receivers}
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H03H11/348 3 {particularly adapted as coupling circuit between transmitters and antenna}
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H03H11/36 2 Networks for connecting several sources or loads, working on the same frequency band, to a common load or source (phase shifters providing two or more output signals H03H11/22)
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H03H11/362 3 {particularly adapted for use in common antenna systems}
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H03H11/365 3 {particularly adapted as input circuit for receivers}
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H03H11/367 3 {particularly adapted as coupling circuit between transmitters and antenna}
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H03H11/38 2 One-way transmission networks, i.e. unilines
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H03H11/40 2 Impedance converters
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H03H11/405 3 {Positive impedance converters (H03H11/42 takes precedence; used in frequency selective networks H03H11/0416)}
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H03H11/42 3 Gyrators (used in frequency selective networks H03H11/08)
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H03H11/44 3 Negative impedance converters (H03H11/42 takes precedence; used in frequency selective networks H03H11/10)
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H03H11/46 1 One-port networks
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H03H11/48 2 simulating reactances
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H03H11/481 3 {Simulating capacitances}
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H03H11/483 3 {Simulating capacitance multipliers}
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H03H11/485 3 {Simulating inductances using operational amplifiers}
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H03H11/486 3 {Simulating inductances using transconductance amplifiers}
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H03H11/488 3 {Simulating inductances using current conveyors}
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H03H11/50 3 using gyrators
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H03H11/52 2 simulating negative resistances
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H03H11/525 3 {Simulating frequency dependent negative resistance [FDNR]}
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H03H11/53 2 {simulating resistances; simulating resistance multipliers}
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H03H11/54 1 Modifications of networks to reduce influence of variations of temperature
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H03H15/00 0 Transversal filters (electromechanical filters H03H9/46, H03H9/70)
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H03H2015/002 1 {Computation saving measures}
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H03H2015/005 1 {comprising capacitors implemented with MEMS technology}
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H03H2015/007 1 {Programmable filters}
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H03H15/02 1 using analogue shift registers
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H03H15/023 2 {with parallel-input configuration}
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H03H2015/026 1 {Matched filters in charge domain}
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H03H17/00 0 Networks using digital techniques
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H03H17/0009 1 {Time-delay networks}
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H03H17/0018 2 {Realizing a fractional delay}
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H03H17/0027 3 {by means of a non-recursive filter}
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H03H17/0036 3 {by means of a recursive filter}
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H03H17/0045 1 {Impedance matching networks}
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H03H17/0054 1 {Attenuators}
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H03H17/0063 1 {R, L, C, simulating networks}
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H03H2017/0072 1 {Theoretical filter design}
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H03H2017/0081 2 {of FIR filters}
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H03H2017/009 2 {of IIR filters}
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H03H17/02 1 Frequency selective networks {(digital computers for complex mathematical operations G06F17/10)}
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H03H17/0201 2 {Wave digital filters}
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H03H17/0202 2 {Two or more dimensional filters; Filters for complex signals (multidimensional convolutions G06F17/153)}
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H03H2017/0204 3 {Comb filters}
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H03H2017/0205 3 {Kalman filters}
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H03H2017/0207 3 {Median filters}
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H03H2017/0208 3 {using neural networks}
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H03H2017/021 3 {Wave digital filters}
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H03H17/0211 2 {using specific transformation algorithms, e.g. WALSH functions, Fermat transforms, Mersenne transforms, polynomial transforms, Hilbert transforms (correlation computation G06F17/156)}
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H03H17/0213 3 {Frequency domain filters using Fourier transforms}
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H03H2017/0214 4 {with input-sampling frequency and output-delivery frequency which differ, e.g. interpolation, extrapolation; anti-aliasing}
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H03H17/0216 3 {Quefrency domain filters}
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H03H17/0217 3 {Number theoretic transforms}
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H03H17/0219 2 {Compensation of undesirable effects, e.g. quantisation noise, overflow (stability problems H03H17/0461)}
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H03H2017/022 3 {Rounding error}
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H03H2017/0222 3 {Phase error}
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H03H17/0223 2 {Computation saving measures; Accelerating measures (computations per se G06F)}
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H03H17/0225 3 {Measures concerning the multipliers}
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H03H17/0226 4 {comprising look-up tables}
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H03H17/0227 3 {Measures concerning the coefficients}
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H03H17/0229 4 {reducing the number of taps}
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H03H17/023 4 {reducing the wordlength, the possible values of coefficients}
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H03H2017/0232 5 {Canonical signed digit [CSD] or power of 2 coefficients}
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H03H17/0233 3 {Measures concerning the signal representation}
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H03H17/0235 4 {reducing the wordlength of signals}
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H03H17/0236 4 {using codes}
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H03H17/0238 3 {Measures concerning the arithmetic used (performing computations G06F7/60)}
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H03H17/0239 4 {Signed digit arithmetic}
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H03H17/0241 4 {Distributed arithmetic}
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H03H17/0242 4 {Residue number arithmetic}
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H03H2017/0244 3 {Measures to reduce settling time}
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H03H2017/0245 3 {Measures to reduce power consumption (H03H17/0223 takes precedence)}
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H03H2017/0247 3 {Parallel structures using a slower clock}
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H03H17/0248 2 {Filters characterised by a particular frequency response or filtering method}
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H03H17/025 3 {Notch filters}
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H03H17/0251 3 {Comb filters}
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H03H17/0252 3 {Elliptic filters}
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H03H17/0254 3 {Matched filters}
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H03H17/0255 3 {Filters based on statistics (adaptive filters H03H21/0029)}
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H03H17/0257 4 {KALMAN filters}
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H03H17/0258 4 {ARMA filters}
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H03H17/026 3 {Averaging filters}
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H03H17/0261 3 {Non linear filters}
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H03H17/0263 4 {Rank order filters}
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H03H17/0264 3 {Filter sets with mutual related characteristics}
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H03H17/0266 4 {Filter banks}
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H03H17/0267 5 {comprising non-recursive filters}
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H03H17/0269 5 {comprising recursive filters}
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H03H17/027 4 {Complementary filters; Phase complementary filters}
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H03H17/0272 4 {Quadrature mirror filters}
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H03H17/0273 4 {Polyphase filters}
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H03H17/0275 5 {comprising non-recursive filters}
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H03H17/0276 6 {having two phases}
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H03H17/0277 5 {comprising recursive filters}
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H03H17/0279 6 {having two phases}
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H03H17/028 3 {Polynomial filters}
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H03H17/0282 3 {Sinc or gaussian filters (H03H17/0671 takes precedence)}
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H03H17/0283 2 {Filters characterised by the filter structure (H03H17/0202, H03H17/0219 - H03H17/0248 take precedence)}
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H03H17/0285 3 {Ladder or lattice filters}
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H03H17/0286 3 {Combinations of filter structures}
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H03H17/0288 4 {Recursive, non-recursive, ladder, lattice structures}
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H03H17/0289 4 {Digital and active filter structures}
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H03H17/0291 4 {Digital and sampled data filters}
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H03H17/0292 3 {Time multiplexed filters; Time sharing filters}
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H03H17/0294 2 {Variable filters; Programmable filters}
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H03H2017/0295 3 {Changing between two filter characteristics}
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H03H2017/0297 3 {Coefficients derived from input parameters}
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H03H2017/0298 2 {DSP implementation}
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H03H17/04 2 Recursive filters
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H03H17/0405 3 {comprising a ROM addressed by the input and output data signals}
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H03H17/0411 3 {using DELTA modulation}
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H03H17/0416 3 {with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing}
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H03H17/0422 4 {the input and output signals being derived from two separate clocks, i.e. asynchronous sample rate conversion}
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H03H17/0427 4 {characterized by the ratio between the input-sampling and output-delivery frequencies}
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H03H17/0433 5 {the ratio being arbitrary or irrational}
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H03H17/0438 5 {the ratio being integer}
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H03H17/0444 6 {where the output-delivery frequency is higher than the input sampling frequency, i.e. interpolation}
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H03H17/045 6 {where the output-delivery frequency is lower than the input sampling frequency, i.e. decimation}
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H03H17/0455 5 {the ratio being rational}
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H03H17/0461 3 {Quantisation; Rounding; Truncation; Overflow oscillations or limit cycles eliminating measures}
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H03H2017/0466 4 {Reduction of limit cycle oscillation}
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H03H2017/0472 3 {based on allpass structures}
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H03H2017/0477 3 {Direct form I}
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H03H2017/0483 4 {Transposed}
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H03H2017/0488 3 {Direct form II}
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H03H2017/0494 4 {Transposed}
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H03H17/06 2 Non-recursive filters
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H03H17/0607 3 {comprising a ROM addressed by the input data signals}
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H03H17/0614 3 {using Delta-modulation}
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H03H17/0621 3 {with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing}
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H03H17/0628 4 {the input and output signals being derived from two separate clocks, i.e. asynchronous sample rate conversion}
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H03H17/0635 4 {characterized by the ratio between the input-sampling and output-delivery frequencies}
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H03H17/0642 5 {the ratio being arbitrary or irrational}
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H03H17/065 5 {the ratio being integer}
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H03H17/0657 6 {where the output-delivery frequency is higher than the input sampling frequency, i.e. interpolation}
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H03H17/0664 6 {where the output-delivery frequency is lower than the input sampling frequency, i.e. decimation}
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H03H17/0671 5 {Cascaded integrator-comb [CIC] filters}
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H03H2017/0678 6 {with parallel structure, i.e. parallel CIC [PCIC]}
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H03H17/0685 5 {the ratio being rational}
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H03H2017/0692 3 {Transposed}
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H03H17/08 1 Networks for phase shifting
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H03H19/00 0 Networks using time-varying elements, e.g. N-path filters
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H03H19/002 1 {N-path filters}
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H03H19/004 1 {Switched capacitor networks}
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H03H19/006 2 {simulating one-port networks}
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H03H19/008 1 {with variable switch closing time}
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H03H21/00 0 Adaptive networks
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H03H21/0001 1 {Analogue adaptive filters}
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H03H21/0003 2 {comprising CCD devices}
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H03H21/0005 2 {comprising SAW devices}
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H03H21/0007 2 {comprising switched capacitor [SC] devices}
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H03H2021/0009 2 {Details}
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H03H2021/001 3 {Analog multipliers}
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H03H21/0012 1 {Digital adaptive filters}
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H03H21/0014 2 {Lattice filters}
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H03H21/0016 2 {Non linear filters}
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H03H21/0018 2 {Matched filters}
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H03H21/002 2 {Filters with a particular frequency response (H03H21/0014 - H03H21/0018 take precedence)}
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H03H21/0021 3 {Notch filters}
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H03H21/0023 3 {Comb filters}
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H03H21/0025 2 {Particular filtering methods}
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H03H21/0027 3 {filtering in the frequency domain}
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H03H21/0029 3 {based on statistics}
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H03H21/003 4 {KALMAN filters}
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H03H21/0032 4 {ARMA filters}
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H03H2021/0034 3 {Blind source separation}
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H03H2021/0036 4 {of convolutive mixtures}
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H03H2021/0038 4 {of instantaneous mixtures}
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H03H2021/004 4 {using state space representation}
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H03H2021/0041 3 {Subband decomposition}
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H03H21/0043 2 {Adaptive algorithms}
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H03H2021/0045 3 {Equation error}
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H03H2021/0047 4 {Combined output and equation error}
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H03H2021/0049 3 {Recursive least squares algorithm}
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H03H2021/005 4 {with forgetting factor}
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H03H2021/0052 4 {combined with stochastic gradient algorithm}
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H03H2021/0054 5 {Affine projection}
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H03H2021/0056 3 {Non-recursive least squares algorithm [LMS]}
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H03H2021/0058 4 {Block LMS, i.e. in frequency domain}
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H03H2021/0059 4 {Delayed LMS}
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H03H2021/0061 4 {Normalized LMS [NLMS]}
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H03H2021/0063 5 {Proportionate NLMS}
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H03H2021/0065 4 {Sign-sign LMS}
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H03H21/0067 2 {Means or methods for compensation of undesirable effects}
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H03H2021/0069 3 {Finite wordlength}
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H03H2021/007 2 {Computation saving measures; Accelerating measures}
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H03H2021/0072 3 {Measures relating to the coefficients}
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H03H2021/0074 4 {Reduction of the update frequency}
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H03H2021/0076 3 {Measures relating to the convergence time (H03H2021/0072 takes precedence)}
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H03H2021/0078 4 {varying the step size}
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H03H2021/0079 3 {using look-up tables}
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H03H2021/0081 2 {Details}
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H03H2021/0083 3 {Shadow filter, i.e. one of two filters which are simultaneously adapted, wherein the results of adapting the shadow filter are used for adapting the other filter}
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H03H2021/0085 2 {Applications}
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H03H2021/0087 3 {Prediction}
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H03H2021/0089 3 {System identification, i.e. modeling}
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H03H2021/009 4 {with recursive filters}
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H03H2021/0092 3 {Equalization, i.e. inverse modeling}
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H03H2021/0094 3 {Interference Cancelling}
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H03H2021/0096 2 {with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; anti-aliasing}
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H03H2021/0098 1 {Adaptive filters comprising analog and digital structures}
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H03H2210/00 0 Indexing scheme relating to details of tunable filters
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H03H2210/01 1 Tuned parameter of filter characteristics
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H03H2210/012 2 Centre frequency; Cut-off frequency
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H03H2210/015 2 Quality factor or bandwidth
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H03H2210/017 2 Amplitude, gain or attenuation
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H03H2210/02 1 Variable filter component
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H03H2210/021 2 Amplifier, e.g. transconductance amplifier
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H03H2210/023 3 Tuning of transconductance via tail current source
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H03H2210/025 2 Capacitor
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H03H2210/026 2 Inductor
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H03H2210/028 2 Resistor
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H03H2210/03 1 Type of tuning
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H03H2210/033 2 Continuous
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H03H2210/036 2 Stepwise
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H03H2210/04 1 Filter calibration method
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H03H2210/043 2 by measuring time constant
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H03H2210/046 2 Master -slave
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H03H2218/00 0 Indexing scheme relating to details of digital filters
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H03H2218/02 1 Coefficients
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H03H2218/025 2 updated selectively, e.g. by, in the presence of noise, temporally cancelling the update and outputting a predetermined value
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H03H2218/04 1 In-phase and quadrature [I/Q] signals
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H03H2218/06 1 Multiple-input, multiple-output [MIMO]; Multiple-input, single-output [MISO]
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H03H2218/08 1 Resource sharing
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H03H2218/085 2 Multipliers
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H03H2218/10 1 Multiplier and or accumulator units
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H03H2218/12 1 Signal conditioning
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H03H2218/14 1 Non-uniform sampling
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H03H2220/00 0 Indexing scheme relating to structures of digital filters
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H03H2220/02 1 Modular, e.g. cells connected in cascade
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H03H2220/04 1 Pipelined
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H03H2220/06 1 Systolic
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H03H2220/08 1 Variable filter length
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H03H2222/00 0 Indexing scheme relating to digital filtering methods
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H03H2222/02 1 using fuzzy logic
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H03H2222/04 1 using neural networks
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H03H2222/06 1 using wavelets
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H03H2240/00 0 Indexing scheme relating to filter banks
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H03H2250/00 0 Indexing scheme relating to dual- or multi-band filters
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H03H2260/00 0 Theory relating to impedance networks
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H03J TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
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H03J1/00 0 Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general
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H03J1/0008 1 {using a central processing unit, e.g. a microprocessor (digital tuning in general H03J5/0245)}
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H03J1/0016 2 {Indicating arrangements (digital indication of tuning in general H03J1/048)}
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H03J1/0025 2 {in a remote control unit (remote control tuning in general H03J9/00)}
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H03J1/0033 2 {for voltage synthesis with a D/A converter}
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H03J1/0041 2 {for frequency synthesis with counters or frequency dividers}
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H03J1/005 3 {in a loop}
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H03J1/0058 2 {provided with channel identification means (arrangements for monitoring the use made of broadcast services H04H60/31)}
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H03J1/0066 3 {with means for analysing the received signal strength (H03J1/0083 takes precedence)}
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H03J1/0075 4 {where the receiving frequencies of the stations are stored in a permanent memory, e.g. ROM}
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H03J1/0083 3 {using two or more tuners}
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H03J1/0091 2 {provided with means for scanning over a band of frequencies (H03J1/0058 takes precedence)}
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H03J1/02 1 Indicating arrangements {(indicating correct tuning H03J3/12)}
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H03J1/025 2 {with voiced announcement}
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H03J1/04 2 with optical indicating means
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H03J1/041 3 {Pointers, markers, or the like, for tuning dials; Folding dials}
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H03J1/042 3 {Means insuring a precise reading of the dial, e.g. special scale, local illumination possibly temporary, luminous point moving with the pointer}
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H03J1/044 3 {Illumination of the tuning dial; On and off switching of the illumination; Circuits related with illumination}
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H03J1/045 3 {Indication of the tuning band, the bandwidth, tone control, the channel number, the frequency, or the like}
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H03J1/047 4 {using electronic means, e.g. LED's (display of electronic variables in general G01R13/00, for discontinuous display G01R13/404)}
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H03J1/048 5 {with digital indication (using a microprocessor H03J1/0016)}
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H03J1/06 1 Driving or adjusting arrangements; combined with other driving or adjusting arrangements, e.g. of gain control
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H03J1/063 2 {Special arrangements taken in correlation with the wear; Suppressing backlash; Locking in a desired position}
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H03J1/066 2 {Constructional details regarding potentiometric setting of voltage or current variable reactances}
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H03J1/08 2 Toothed-gear drive; Worm drive
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H03J1/10 2 Rope drive; Chain drive
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H03J1/12 2 Friction drive
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H03J1/14 2 Special arrangements for fine and coarse tuning
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H03J1/16 2 Single control means independently performing two or more functions
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H03J1/18 1 Control by auxiliary power
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H03J1/182 2 {using a ring of magnets or the like}
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H03J1/185 2 {the auxiliary power producing an adjustment dependent on the current intensity}
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H03J1/187 2 {the auxiliary power balancing automatically a Wheatstone bridge or the like, that has been unbalanced by the controlling device}
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H03J1/20 2 the auxiliary power being switched on as long as controlling current is switched on
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H03J1/22 2 with stepping arrangements actuated by control pulses
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H03J3/00 0 Continuous tuning (H03J7/00, H03J9/00 take precedence; combination of continuous and discontinuous tuning other than for bandspreading H03J5/00)
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H03J3/02 1 Details
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H03J3/04 2 Arrangements for compensating for variations of physical values, e.g. temperature
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H03J3/06 2 Arrangements for obtaining constant bandwidth or gain throughout tuning range or ranges
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H03J3/08 3 by varying a second parameter simultaneously with the tuning, e.g. coupling bandpass filter
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H03J3/10 2 Circuit arrangements for fine tuning, e.g. bandspreading
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H03J3/12 2 Electrically-operated arrangements for indicating correct tuning
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H03J3/14 3 Visual indication, e.g. magic eye
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H03J3/16 2 Tuning without displacement of reactive element, e.g. by varying permeability
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H03J3/18 3 by discharge tube or semiconductor device simulating variable reactance
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H03J3/185 4 {with varactors, i.e. voltage variable reactive diodes}
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H03J3/20 1 of single resonant circuit by varying inductance only or capacitance only
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H03J3/22 1 of single resonant circuit by varying inductance and capacitance simultaneously
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H03J3/24 1 of more than one resonant circuit simultaneously, the circuits being tuned to substantially the same frequency, e.g. for single-knob tuning
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H03J3/26 2 the circuits being coupled so as to form a bandpass filter
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H03J3/28 1 of more than one resonant circuit simultaneously, the tuning frequencies of the circuits having a substantially constant difference throughout the tuning range
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H03J3/30 2 Arrangements for ensuring tracking with variable inductors
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H03J3/32 2 Arrangements for ensuring tracking with variable capacitors
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H03J5/00 0 Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner (H03J7/00, H03J9/00 take precedence; for bandspreading H03J3/10)
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H03J5/02 1 with variable tuning element having a number of predetermined settings and adjustable to a desired one of these settings
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H03J5/0209 2 {Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, by selecting the corresponding analogue value between a set of non preset values}
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H03J5/0218 2 {Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, by selecting the corresponding analogue value between a set of preset values}
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H03J5/0227 3 {using a counter}
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H03J5/0236 3 {with possibility to skip over certain counter positions, i.e. channel skipping, or scanning the counter position with a variable frequency rate}
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H03J5/0245 2 {Discontinuous tuning using an electrical variable impedance element, e.g. a voltage variable reactive diode, in which no corresponding analogue value either exists or is preset, i.e. the tuning information is only available in a digital form (microprocessor tuning H03J1/0008)}
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H03J5/0254 3 {the digital values being transfered to a D/A converter}
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H03J5/0263 4 {the digital values being held in an auxiliary non erasable memory}
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H03J5/0272 3 {the digital values being used to preset a counter or a frequency divider in a phase locked loop, e.g. frequency synthesizer}
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H03J5/0281 4 {the digital values being held in an auxiliary non erasable memory}
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H03J5/029 3 {with channel skipping capability}
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H03J5/04 2 operated by hand
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H03J5/06 3 Settings determined by single indexing means with snap action
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H03J5/08 3 Settings determined by a number of separately-actuated positioning means
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H03J5/10 3 Settings determined by a number of positioning means mounted on a common support, {e.g. turret tuner,} which is adjustable to desired positions, a different positioning means being in operation in each position
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H03J5/12 3 Settings determined by a number of separately-actuated driving means which adjust the tuning element directly to desired settings
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H03J5/14 2 operated by auxiliary power
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H03J5/143 3 {Settings determined by a number of positioning means mounted on a common support, e.g. turret tuner, which is adjustable to determined positions, a different positioning means being in operation in each position}
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H03J5/146 3 {Settings desired by a switch controlled together with the tuning member and which stops the control as soon as a desired position is reached}
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H03J5/16 3 Settings determined by a number of separate positioning means actuated by hand
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H03J5/18 3 Settings determined by a number of separate positioning means actuated by electromagnets
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H03J5/20 3 Settings determined by a number of positioning means actuated by a second means adjustable to different positions by the same or by a second auxiliary power
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H03J5/22 3 Settings determined by a number of separately actuated driving means which adjust the tuning element directly to desired settings
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H03J5/24 1 with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
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H03J5/242 2 {used exclusively for band selection}
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H03J5/244 3 {using electronic means}
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H03J5/246 2 {using electronic means (H03J5/244 takes precedence)}
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H03J5/248 2 {using electromechanical means}
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H03J5/26 2 operated by hand
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H03J5/28 3 Tuning circuits or elements supported on a revolving member with contacts arranged in a plane perpendicular to the axis
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H03J5/30 3 Tuning circuits or elements supported on a revolving member with contacts arranged in lines parallel to the axis
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H03J5/32 3 Stationary tuning circuits or elements selected by push-button
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H03J7/00 0 Automatic frequency control; Automatic scanning over a band of frequencies
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H03J7/02 1 Automatic frequency control (H03J7/18 takes precedence)
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H03J7/023 2 {Neutralization of the automatic frequency correction during a tuning change}
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H03J7/026 2 {Means preventing a wrong working of the automatic frequency correction in case of fading or bad signal/noise ratio}
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H03J7/04 2 where the frequency control is accomplished by varying the electrical characteristics of a non-mechanically adjustable element or where the nature of the frequency controlling element is not significant
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H03J7/042 3 {with reactance tube}
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H03J7/045 3 {Modification of automatic frequency control sensitivity or linearising automatic frequency control operation; Modification of the working range (H03J7/10 takes precedence)}
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H03J7/047 3 {Automatic frequency control using an auxiliary signal, e.g. low frequency scanning of the locking range or superimposing a special signal on the input signal}
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H03J7/06 3 using counters or frequency dividers
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H03J7/065 4 {the counter or frequency divider being used in a phase locked loop}
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H03J7/08 3 using varactors, i.e. voltage variable reactive diodes (H03J7/06 takes precedence)
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H03J7/10 4 Modification of automatic frequency control sensitivity or linearising automatic frequency control operation
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H03J7/12 4 Combination of automatic frequency control voltage with stabilised varactor supply voltage
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H03J7/14 3 Controlling the magnetic state of inductor cores (H03J7/06 takes precedence)
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H03J7/16 2 where the frequency control is accomplished by mechanical means, e.g. by a motor
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H03J7/18 1 Automatic scanning over a band of frequencies
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H03J7/183 2 {combined with selection between different stations transmitting the same programm, e.g. by analysis of the received signal strength}
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H03J7/186 3 {using two or more tuners}
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H03J7/20 2 where the scanning is accomplished by varying the electrical characteristics of a non-mechanically adjustable element {(H03J7/183 takes precedence)}
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H03J7/22 3 in which an automatic frequency control circuit is brought into action after the scanning action has been stopped (H03J7/24 takes precedence)
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H03J7/24 3 using varactors, i.e. voltage variable reactive diodes (H03J7/28 takes precedence)
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H03J7/26 4 in which an automatic frequency control circuit is brought into action after the scanning action has been stopped
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H03J7/28 3 using counters or frequency dividers
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H03J7/285 4 {the counter or frequency divider being used in a phase locked loop}
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H03J7/30 2 where the scanning is accomplished by mechanical means, e.g. by a motor
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H03J7/305 3 {in which an automatic frequency control circuit is brought in action after the scanning action has been stopped}
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H03J7/32 2 with simultaneous display of received frequencies, e.g. panoramic receivers
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H03J9/00 0 Remote-control of tuned circuits; Combined remote-control of tuning and other functions, e.g. brightness, amplification (mechanical remote-control arrangements H03J1/00 {; using a microprocessor H03J1/0025; constructional details of remote control switching devices H01H9/0235})
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H03J9/002 1 {comprising one or more tuning stages separated from the rest of a receiver}
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H03J9/005 1 {using non-electrical means without push-button control, e.g. pneumatic, hydraulic or sound wave transmission, Bowden cables}
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H03J9/007 1 {by voltages or currents with different frequencies or phases}
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H03J9/02 1 using radio transmission; using near-field transmission
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H03J9/04 1 using ultrasonic, sonic or infrasonic waves
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H03J9/06 1 using electromagnetic waves other than radio waves, e.g. light
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H03J2200/00 0 Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
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H03J2200/01 1 Circuitry controlling the selecting or switching action
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H03J2200/02 1 Algorithm used as input for AFC action alignment receiver
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H03J2200/03 1 Alignment of a receiver during fabrication
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H03J2200/04 1 Alignment of a transmitter during fabrication
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H03J2200/05 1 Alignment of transmitter with a receiver, after fabrication
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H03J2200/06 1 Tuning of antenna
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H03J2200/07 1 Calibration of receivers, using quartz crystal oscillators as reference
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H03J2200/08 1 Calibration of receivers, in particular of a band pass filter
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H03J2200/09 1 Calibration of oscillator in receiver, using an external carrier frequency as reference
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H03J2200/10 1 Tuning of a resonator by means of digitally controlled capacitor bank
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H03J2200/11 1 Cellular receiver, e.g. GSM, combined with a GPS receiver
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H03J2200/12 1 Radio receiver combined with a GPS receiver
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H03J2200/13 1 Television receiver combined with a GPS receiver
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H03J2200/14 1 Tunable filter in receiver contributing to image rejection
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H03J2200/15 1 Tuning of resonator by means of digitally controlled inductor bank
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H03J2200/16 1 Interpolation of control values for varicaps
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H03J2200/17 1 Elimination of interference caused by harmonics of local oscillator
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H03J2200/18 1 Tuning of a master filter in order to tune its slave filter
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H03J2200/19 1 Resonator in MEMS technology
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H03J2200/20 1 Radio receiver with possibility to choose a station with a certain program style
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H03J2200/21 1 Television receiver with possibility to choose a station with a certain program style
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H03J2200/22 1 Remote control device controlling cursor and/or including a cursor detecting device
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H03J2200/23 1 Remote control device with display showing data to be transmitted to the controlled apparatus
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H03J2200/24 1 Remote control device with display showing program content
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H03J2200/25 1 Remote control device with display
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H03J2200/26 2 Remote control device with touch screen display
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H03J2200/27 1 Adjusting the seek sensitivity of a scanning or sweeping receiver
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H03J2200/28 1 Automatic self-alignment of a receiver
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H03J2200/29 1 Self-calibration of a receiver
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H03J2200/30 1 Radio receiver with speech synthesis ability, used for conveying information that is shown on the display
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H03J2200/31 1 Several sweeping or scanning speeds
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H03J2200/32 1 Tuning of tracking filter
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H03J2200/33 1 Tuning of filter by controlling transconductance
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H03J2200/34 1 Tuning of oscillator by controlling transconductance
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H03J2200/35 1 Inductance tunable by switching in/out parts of the inductor
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H03J2200/36 1 Circuit arrangements for, e.g. increasing the tuning range, linearizing the voltage-capacitance relationship, lowering noise, constant slope in different bands
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H03J2200/37 1 Control voltage applied to the anode of the varicap
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H03J2200/38 1 Control voltage applied to the cathode of the varicap
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H03J2200/39 1 Variable capacitors implemented using microelectro-mechanical systems [MEMS]
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H03J2200/40 1 Conversion to a zero or near-zero intermediate frequency
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H03K PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
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H03K3/00 0 Circuits for generating electric pulses; Monostable, bistable or multistable circuits (H03K4/00 takes precedence; for digital function generators in computers G06F1/02)
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H03K3/01 1 Details
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H03K3/011 2 Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature {(to maintain energy constant H03K3/015)}
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H03K3/012 2 Modifications of generator to improve response time or to decrease power consumption
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H03K3/013 2 Modifications of generator to prevent operation by noise or interference
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H03K3/014 2 Modifications of generator to ensure starting of oscillations
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H03K3/015 2 Modifications of generator to maintain energy constant
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H03K3/017 2 Adjustment of width or dutycycle of pulses (pulse width modulation H03K7/08 {; to maintain energy constant H03K3/015})
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H03K3/02 1 Generators characterised by the type of circuit or by the means used for producing pulses (H03K3/64 - H03K3/84 take precedence)
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H03K3/021 2 by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT
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H03K3/023 2 by the use of differential amplifiers or comparators, with internal or external positive feedback
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H03K3/0231 3 Astable circuits {(H03K3/0315 takes precedence)}
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H03K3/02315 4 {Stabilisation of output, e.g. using crystal}
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H03K3/0232 3 Monostable circuits
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H03K3/0233 3 Bistable circuits
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H03K3/02332 4 {of the master-slave type}
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H03K3/02335 4 {provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00)}
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H03K3/02337 4 {Bistables with hysteresis, e.g. Schmitt trigger (non-regenerative amplitude discriminators G01R19/165)}
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H03K3/0234 3 Multistable circuits
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H03K3/027 2 by the use of logic circuits, with internal or external positive feedback
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H03K3/03 3 Astable circuits
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H03K3/0307 4 {Stabilisation of output, e.g. using crystal}
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H03K3/0315 4 {Ring oscillators}
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H03K3/0322 5 {with differential cells}
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H03K3/033 3 Monostable circuits
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H03K3/037 3 Bistable circuits
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H03K3/0372 4 {of the master-slave type}
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H03K3/0375 4 {provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00)}
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H03K3/0377 4 {Bistables with hysteresis, e.g. Schmitt trigger (non-regenerative amplitude discriminators G01R19/165)}
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H03K3/038 3 Multistable circuits
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H03K3/04 2 by the use, as active elements, of vacuum tubes only, with positive feedback (H03K3/023, H03K3/027 take precedence)
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H03K3/05 3 using means other than a transformer for feedback
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H03K3/06 4 using at least two tubes so coupled that the input of one is derived from the output of another, e.g. multivibrator
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H03K3/08 5 astable
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H03K3/09 6 Stabilisation of output
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H03K3/10 5 monostable
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H03K3/12 5 bistable
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H03K3/13 6 Bistables with hysteresis, e.g. Schmitt trigger
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H03K3/14 5 multistable
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H03K3/16 3 using a transformer for feedback, e.g. blocking oscillator with saturable core
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H03K3/22 4 specially adapted for amplitude comparison, i.e. Multiar
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H03K3/26 2 by the use, as active elements, of bipolar transistors with internal or external positive feedback (H03K3/023, H03K3/027 take precedence)
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H03K3/28 3 using means other than a transformer for feedback
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H03K3/281 4 using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
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H03K3/282 5 astable
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H03K3/2821 6 {Emitters connected to one another by using a capacitor}
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H03K3/2823 6 {using two active transistor of the same conductivity type (H03K3/2821 takes precedence)}
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H03K3/2825 7 {in an asymmetrical circuit configuration}
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H03K3/2826 6 {using two active transistors of the complementary type (H03K3/2821 take precedence)}
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H03K3/2828 7 {in an asymmetrical circuit configuration}
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H03K3/283 6 Stabilisation of output {, e.g. using crystal}
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H03K3/284 5 monostable
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H03K3/286 5 bistable
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H03K3/2865 6 {ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00)}
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H03K3/287 6 using additional transistors in the feedback circuit (H03K3/289 takes precedence)
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H03K3/288 6 using additional transistors in the input circuit (H03K3/289 takes precedence)
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H03K3/2885 7 the input circuit having a differential configuration
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H03K3/289 6 of the master-slave type
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H03K3/2893 6 Bistables with hysteresis, e.g. Schmitt trigger
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H03K3/2897 7 with an input circuit of differential configuration
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H03K3/29 5 multistable
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H03K3/30 3 using a transformer for feedback, e.g. blocking oscillator
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H03K3/313 2 by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic
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H03K3/315 3 the devices being tunnel diodes
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H03K3/33 2 by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
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H03K3/335 2 by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect
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H03K3/35 2 by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region (H03K3/023, H03K3/027 take precedence)
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H03K3/351 3 the devices being unijunction transistors (H03K3/352 takes precedence)
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H03K3/352 3 the devices being thyristors
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H03K3/3525 4 Anode gate thyristors or programmable unijunction transistors
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H03K3/353 2 by the use, as active elements, of field-effect transistors with internal or external positive feedback (H03K3/023, H03K3/027 take precedence)
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H03K3/354 3 Astable circuits
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H03K3/3545 4 {Stabilisation of output, e.g. using crystal}
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H03K3/355 3 Monostable circuits
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H03K3/356 3 Bistable circuits
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H03K3/356008 4 {ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00)}
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H03K3/356017 4 {using additional transistors in the input circuit (H03K3/356104, H03K3/3562 take precedence)}
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H03K3/356026 5 {with synchronous operation (H03K3/356034, H03K3/356052 take precedence)}
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H03K3/356034 5 {the input circuit having a differential configuration}
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H03K3/356043 6 {with synchronous operation}
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H03K3/356052 5 {using pass gates}
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H03K3/35606 6 {with synchronous operation}
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H03K3/356069 4 {using additional transistors in the feedback circuit (H03K3/356104, H03K3/3562 take precedence)}
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H03K3/356078 5 {with synchronous operation}
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H03K3/356086 4 {with additional means for controlling the main nodes (H03K3/356104, H03K3/3562 take precedence)}
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H03K3/356095 5 {with synchronous operation}
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H03K3/356104 4 {using complementary field-effect transistors (H03K3/35625 takes precedence)}
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H03K3/356113 5 {using additional transistors in the input circuit}
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H03K3/356121 6 {with synchronous operation (H03K3/35613, H03K3/356147 take precedence)}
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H03K3/35613 6 {the input circuit having a differential configuration}
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H03K3/356139 7 {with synchronous operation}
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H03K3/356147 6 {using pass gates}
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H03K3/356156 7 {with synchronous operation}
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H03K3/356165 5 {using additional transistors in the feedback circuit}
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H03K3/356173 6 {with synchronous operation}
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H03K3/356182 5 {with additional means for controlling the main nodes}
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H03K3/356191 6 {with synchronous operation}
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H03K3/3562 4 of the master-slave type
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H03K3/35625 5 {using complementary field-effect transistors}
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H03K3/3565 4 Bistables with hysteresis, e.g. Schmitt trigger
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H03K3/3568 3 Multistable circuits
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H03K3/357 2 by the use, as active elements, of bulk negative resistance devices, e.g. Gunn-effect devices
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H03K3/36 2 by the use, as active elements, of semiconductors, not otherwise provided for
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H03K3/37 2 by the use, as active elements, of gas-filled tubes, e.g. astable trigger circuits (H03K3/55 takes precedence)
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H03K3/38 2 by the use, as active elements, of superconductive devices
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H03K3/40 2 by the use, as active elements, of electrochemical cells
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H03K3/42 2 by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
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H03K3/43 2 by the use, as active elements, of beam deflection tubes
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H03K3/45 2 by the use, as active elements, of non-linear magnetic or dielectric devices
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H03K3/455 3 {using thin films}
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H03K3/47 3 the devices being parametrons
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H03K3/49 3 the devices being ferro-resonant
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H03K3/51 3 the devices being multi-aperture magnetic cores, e.g. transfluxors
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H03K3/53 2 by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback (H03K3/335 takes precedence)
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H03K3/537 3 the switching device being a spark gap
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H03K3/543 3 the switching device being a vacuum tube
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H03K3/55 3 the switching device being a gas-filled tube having a control electrode
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H03K3/57 3 the switching device being a semiconductor device
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H03K3/59 2 by the use of galvano-magnetic devices, e.g. Hall effect devices
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H03K3/64 1 Generators producing trains of pulses, i.e. finite sequences of pulses
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H03K3/66 2 by interrupting the output of a generator
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H03K3/70 3 time intervals between all adjacent pulses of one train being equal
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H03K3/72 2 with means for varying repetition rate of trains
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H03K3/78 1 Generating a single train of pulses having a predetermined pattern, e.g. a predetermined number
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H03K3/80 1 Generating trains of sinusoidal oscillations (by keying or interruption of sinusoidal oscillations H03C; for transmission of digital information H04L)
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H03K3/84 1 Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators
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H03K3/86 1 Generating pulses by means of delay lines and not covered by the preceding subgroups
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H03K4/00 0 Generating pulses having essentially a finite slope or stepped portions
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H03K4/02 1 having stepped portions, e.g. staircase waveform
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H03K4/023 2 {by repetitive charge or discharge of a capacitor, analogue generators}
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H03K4/026 2 {using digital techniques}
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H03K4/04 1 having parabolic shape
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H03K4/06 1 having triangular shape
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H03K4/063 2 {high voltage - or current generators}
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H03K4/066 2 {using a Miller-integrator (H03K4/08 takes precedence)}
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H03K4/08 2 having sawtooth shape
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H03K4/085 3 {Protection of sawtooth generators}
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H03K4/10 3 using as active elements vacuum tubes only
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H03K4/12 4 in which a sawtooth voltage is produced across a capacitor
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H03K4/14 5 using two tubes so coupled that the input of each one is derived from the output of the other, e.g. multivibrator
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H03K4/16 5 using a single tube with positive feedback through transformer, e.g. blocking oscillator
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H03K4/18 5 using a single tube exhibiting negative resistance between two of its electrodes, e.g. transitron, dynatron
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H03K4/20 5 using a tube with negative feedback by capacitor, e.g. Miller integrator
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H03K4/22 6 combined with transitron, e.g. phantastron, sanatron
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H03K4/24 5 Boot-strap generators
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H03K4/26 4 in which a sawtooth current is produced through an inductor
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H03K4/28 5 using a tube operating as a switching device
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H03K4/32 6 combined with means for generating the driving pulses
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H03K4/34 7 using a single tube with positive feedback through a transformer
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H03K4/36 7 using a single tube exhibiting negative resistance between two of its electrodes, e.g. transitron, dynatron
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H03K4/38 8 combined with Miller integrator
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H03K4/39 5 using a tube operating as an amplifier
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H03K4/41 6 with negative feedback through a capacitor, e.g. Miller-integrator
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H03K4/43 6 combined with means for generating the driving pulses
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H03K4/48 3 using as active elements semiconductor devices (H03K4/787 - H03K4/84 take precedence)
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H03K4/50 4 in which a sawtooth voltage is produced across a capacitor
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H03K4/501 5 the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator
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H03K4/502 6 the capacitor being charged from a constant-current source
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H03K4/52 5 using two semiconductor devices so coupled that the input of each one is derived from the output of the other, e.g. multivibrator
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H03K4/54 5 using a single semiconductor device with positive feedback through a transformer, e.g. blocking oscillator
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H03K4/56 5 using a semiconductor device with negative feedback through a capacitor, e.g. Miller integrator
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H03K4/58 5 Boot-strap generators
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H03K4/60 4 in which a sawtooth current is produced through an inductor
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H03K4/62 5 using a semiconductor device operating as a switching device
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H03K4/625 6 {using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode}
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H03K4/64 6 combined with means for generating the driving pulses {(H03K4/625 takes precedence)}
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H03K4/66 7 using a single device with positive feedback, e.g. blocking oscillator
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H03K4/68 6 Generators in which the switching device is conducting during the fly-back part of the cycle
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H03K4/69 5 using a semiconductor device operating as an amplifier
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H03K4/693 6 {operating in push-pull, e.g. class B (H03K4/696 takes precedence)}
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H03K4/696 6 {using means for reducing power dissipation or for shortening the flyback time, e.g. applying a higher voltage during flyback time}
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H03K4/71 6 with negative feedback through a capacitor, e.g. Miller-integrator
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H03K4/72 6 combined with means for generating the driving pulses
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H03K4/725 7 {Push-pull amplifier circuits}
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H03K4/787 3 using as active elements semiconductor devices with two electrodes and exhibiting a negative resistance characteristic
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H03K4/793 4 using tunnel diodes
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H03K4/80 3 using as active elements multi-layer diodes
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H03K4/83 3 using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
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H03K4/835 4 {using pulse-modulation techniques for the generation of the sawtooth wave, e.g. class D, switched mode}
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H03K4/84 4 Generators in which the semiconductor device is conducting during the fly-back part of the cycle {(H03K4/835 takes precedence)}
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H03K4/86 3 using as active elements gas-filled tubes {or spark-gaps}
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H03K4/88 3 using as active elements electrochemical cells {or galvano-magnetic or photo-electric elements}
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H03K4/90 3 Linearisation of ramp (modifying slopes of pulses H03K6/04; scanning distortion correction for television receivers H04N3/23); Synchronisation of pulses
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H03K4/92 1 having a waveform comprising a portion of a sinusoid (generating sinusoidal oscillations H03B)
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H03K4/94 1 having trapezoidal shape
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H03K5/00 0 Manipulating of pulses not covered by one of the other main groups of this subclass (circuits with regenerative action H03K3/00, H03K4/00; by the use of non-linear magnetic or dielectric devices H03K3/45)
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H03K5/00006 1 {Changing the frequency (modulating pulses H03K7/00; frequency dividers H03K21/00 - H03K29/00; additive or subtractive mixing of two pulse rates into one G06F7/605; pulse rate dividers G06F7/68)}
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H03K2005/00013 1 {Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse}
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H03K2005/00019 2 {Variable delay}
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H03K2005/00026 3 {controlled by an analog electrical signal, e.g. obtained after conversion by a D/A converter}
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H03K2005/00032 4 {Dc control of switching transistors}
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H03K2005/00039 5 {having four transistors serially}
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H03K2005/00045 4 {Dc voltage control of a capacitor or of the coupling of a capacitor as a load}
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H03K2005/00052 4 {by mixing the outputs of fixed delayed signals with each other or with the input signal}
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H03K2005/00058 3 {controlled by a digital setting}
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H03K2005/00065 4 {by current control, e.g. by parallel current control transistors}
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H03K2005/00071 4 {by adding capacitance as a load}
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H03K2005/00078 2 {Fixed delay}
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H03K2005/00084 3 {by trimming or adjusting the delay}
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H03K2005/00091 4 {using fuse links}
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H03K2005/00097 3 {Avoiding variations of delay using feedback, e.g. controlled by a PLL}
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H03K2005/00104 4 {using a reference signal, e.g. a reference clock}
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H03K2005/0011 4 {using a separate time interval to calibrate the delay}
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H03K2005/00117 3 {Avoiding variations of delay due to line termination}
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H03K2005/00123 3 {Avoiding variations of delay due to integration tolerances}
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H03K2005/0013 3 {Avoiding variations of delay due to power supply}
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H03K2005/00136 3 {Avoiding asymmetry of delay for leading or trailing edge; Avoiding variations of delay due to threshold}
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H03K2005/00143 3 {Avoiding variations of delay due to temperature}
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H03K2005/0015 2 {Layout of the delay element}
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H03K2005/00156 3 {using opamps, comparators, voltage multipliers or other analog building blocks}
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H03K2005/00163 3 {using bipolar transistors}
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H03K2005/00169 4 {using current mirrors}
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H03K2005/00176 4 {using differential stages}
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H03K2005/00182 4 {using constant current sources}
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H03K2005/00189 3 {in BiCMOS technology}
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H03K2005/00195 3 {using FET's}
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H03K2005/00202 4 {using current mirrors}
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H03K2005/00208 4 {using differential stages}
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H03K2005/00215 4 {where the conduction path of multiple FET's is in parallel or in series, all having the same gate control}
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H03K2005/00221 4 {where the conduction path of the different output FET's is connected in parallel with different gate control, e.g. having different sizes or thresholds, or coupled through different resistors}
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H03K2005/00228 3 {having complementary input and output signals}
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H03K2005/00234 3 {using circuits having two logic levels}
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H03K2005/00241 4 {using shift registers}
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H03K2005/00247 4 {using counters}
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H03K2005/00254 4 {using microprocessors}
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H03K2005/0026 4 {using memories or FIFO's}
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H03K2005/00267 4 {using D/A or A/D converters}
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H03K2005/00273 4 {using digital comparators}
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H03K2005/0028 3 {using varicaps, e.g. gate capacity of a FET with specially defined threshold, as delaying capacitors}
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H03K2005/00286 1 {Phase shifter, i.e. the delay between the output and input pulse is dependent on the frequency, and such that a phase difference is obtained independent of the frequency}
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H03K2005/00293 1 {Output pulse is a delayed pulse issued after a rising or a falling edge, the length of the output pulse not being in relation with the length of the input triggering pulse}
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H03K5/003 1 Changing the DC level (reinsertion of dc component of a television signal H04N5/16)
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H03K5/007 2 Base line stabilisation (thresholding H03K5/08)
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H03K5/01 1 Shaping pulses (discrimination against noise or interference H03K5/125)
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H03K5/02 2 by amplifying (H03K5/04 takes precedence)
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H03K5/023 3 {using field effect transistors}
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H03K5/026 3 {with a bidirectional operation}
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H03K5/04 2 by increasing duration; by decreasing duration
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H03K5/05 3 by the use of clock signals or other time reference signals
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H03K5/06 3 by the use of delay lines or other analogue delay elements
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H03K5/065 4 {using dispersive delay lines}
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H03K5/07 3 by the use of resonant circuits
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H03K5/08 2 by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding (H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30)
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H03K5/082 3 {with an adaptive threshold}
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H03K5/084 4 {modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal}
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H03K5/086 4 {generated by feedback}
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H03K5/088 5 {modified by switching, e.g. by a periodic signal or by a signal in synchronism with the transitions of the output signal}
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H03K5/12 2 by steepening leading or trailing edges
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H03K5/125 1 Discriminating pulses (measuring characteristics of individual pulses G01R29/02; separation of synchronising signals in television systems H04N5/08)
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H03K5/1252 2 Suppression or limitation of noise or interference (specially adapted for transmission systems H04B15/00, H04L25/08)
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H03K5/1254 3 specially adapted for pulses generated by closure of switches, i.e. anti-bouncing devices (debouncing circuits for electronic time-pieces G04G5/00)
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H03K5/13 1 Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
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H03K5/131 2 Digitally controlled
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H03K5/133 2 using a chain of active delay devices
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H03K5/134 3 with field-effect transistors
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H03K5/135 2 by the use of time reference signals, e.g. clock signals
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H03K5/14 2 by the use of delay lines (H03K5/133 takes precedence)
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H03K5/145 2 by the use of resonant circuits
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H03K5/15 1 Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors (distributing, switching or gating arrangements H03K17/00)
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H03K5/15006 2 {with two programmable outputs}
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H03K5/15013 2 {with more than two outputs}
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H03K5/1502 3 {programmable}
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H03K5/15026 3 {with asynchronously driven series connected output stages}
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H03K5/15033 4 {using a chain of bistable devices}
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H03K5/1504 4 {using a chain of active delay devices (H03K5/15053 takes precedence)}
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H03K5/15046 4 {using a tapped delay line}
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H03K5/15053 4 {using a chain of monostable devices}
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H03K5/1506 3 {with parallel driven output stages; with synchronously driven series connected output stages}
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H03K5/15066 4 {using bistable devices (H03K5/15093 takes precedence)}
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H03K5/15073 4 {using a plurality of comparators}
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H03K5/1508 4 {using a plurality of delay lines}
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H03K5/15086 4 {using a plurality of monostables devices}
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H03K5/15093 4 {using devices arranged in a shift register}
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H03K5/151 2 with two complementary outputs
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H03K5/1515 3 {non-overlapping}
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H03K5/153 1 Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant (switching at zero crossing H03K17/13)
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H03K5/1532 2 Peak detectors (measuring characteristics of individual pulses G01R29/02)
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H03K5/1534 2 Transition or edge detectors
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H03K5/1536 2 Zero-crossing detectors (in measuring circuits G01R19/175)
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H03K5/156 1 Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
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H03K5/1565 2 {the output pulses having a constant duty cycle}
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H03K5/159 1 Applications of delay lines not covered by the preceding subgroups
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H03K5/19 1 Monitoring patterns of pulse trains (indicating amplitude G01R19/00; indicating frequency G01R23/00; measuring characteristics of individual pulses G01R29/02)
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H03K5/22 1 Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral (indicating phase difference of two cyclic pulse trains G01R25/00)
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H03K5/24 2 the characteristic being amplitude
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H03K5/2409 3 {using bipolar transistors (H03K5/2436 takes precedence)}
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H03K5/2418 4 {with at least one differential stage}
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H03K5/2427 4 {using clock signals}
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H03K5/2436 3 {using a combination of bipolar and field-effect transistors}
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H03K5/2445 4 {with at least one differential stage}
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H03K5/2454 4 {using clock signals}
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H03K5/2463 3 {using diodes}
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H03K5/2472 3 {using field effect transistors (H03K5/2436 takes precedence)}
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H03K5/2481 4 {with at least one differential stage}
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H03K5/249 4 {using clock signals}
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H03K5/26 2 the characteristic being duration, interval, position, frequency, or sequence
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H03K6/00 0 Manipulating pulses having a finite slope and not covered by one of the other main groups of this subclass (circuits with regenerative action H03K4/00)
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H03K6/02 1 Amplifying pulses
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H03K6/04 1 Modifying slopes of pulses, e.g. S-correction (S-correction in television H04N3/23)
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H03K7/00 0 Modulating pulses with a continuously-variable modulating signal
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H03K7/02 1 Amplitude modulation, i.e. PAM
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H03K7/04 1 Position modulation, i.e. PPM
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H03K7/06 1 Frequency or rate modulation, i.e. PFM or PRM
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H03K7/08 1 Duration or width modulation {Duty cycle modulation}
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H03K7/10 1 Combined modulation, e.g. rate modulation and amplitude modulation
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H03K9/00 0 Demodulating pulses which have been modulated with a continuously-variable signal
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H03K9/02 1 of amplitude-modulated pulses
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H03K9/04 1 of position-modulated pulses
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H03K9/06 1 of frequency- or rate-modulated pulses
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H03K9/08 1 of duration- or width-mudulated pulses {or of duty-cycle modulated pulses}
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H03K9/10 1 of pulses having combined modulation
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H03K11/00 0 Transforming types of modulations, e.g. position-modulated pulses into duration-modulated pulses
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H03K12/00 0 Producing pulses by distorting or combining sinusoidal waveforms (shaping pulses H03K5/01; combining sinewaves using elements operating in a non-switching manner H03B21/00)
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H03K17/00 0 Electronic switching or gating, i.e. not by contact-making and –breaking (gated amplifiers H03F3/72; switching arrangements for exchange systems using static devices H04Q3/52)
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H03K17/002 1 {Switching arrangements with several input- or output terminals (code converters H03M5/00, H03M7/00)}
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H03K17/005 2 {with several inputs only}
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H03K17/007 2 {with several outputs only}
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H03K17/04 1 Modifications for accelerating switching
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H03K17/0403 2 {in thyristor switches}
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H03K17/0406 2 {in composite switches}
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H03K17/041 2 without feedback from the output circuit to the control circuit {(H03K17/0403, H03K17/0406 take precedence)}
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H03K17/04106 3 {in field-effect transistor switches (H03K17/0412, H03K17/0416 take precedence)}
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H03K17/04113 3 {in bipolar transistor switches (H03K17/0412, H03K17/0416 take precedence)}
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H03K17/0412 3 by measures taken in the control circuit
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H03K17/04123 4 {in field-effect transistor switches}
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H03K17/04126 4 {in bipolar transistor switches}
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H03K17/0414 4 Anti-saturation measures
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H03K17/0416 3 by measures taken in the output circuit
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H03K17/04163 4 {in field-effect transistor switches}
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H03K17/04166 4 {in bipolar transistor switches}
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H03K17/042 2 by feedback from the output circuit to the control circuit {(H03K17/0403, H03K17/0406 take precedence)}
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H03K17/04206 3 {in field-effect transistor switches}
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H03K17/04213 3 {in bipolar transistor switches}
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H03K17/0422 3 Anti-saturation measures
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H03K17/0424 3 by the use of a transformer
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H03K17/06 1 Modifications for ensuring a fully conducting state
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H03K17/063 2 {in field-effect transistor switches}
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H03K2017/066 2 {Maximizing the OFF-resistance instead of minimizing the ON-resistance}
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H03K17/08 1 Modifications for protecting switching circuit against overcurrent or overvoltage
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H03K2017/0803 2 {against radiation hardening}
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H03K2017/0806 2 {against excessive temperature}
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H03K17/081 2 without feedback from the output circuit to the control circuit
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H03K17/08104 3 {in field-effect transistor switches (H03K17/0812, H03K17/0814 take precedence)}
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H03K17/08108 3 {in thyristor switches (H03K17/0812, H03K17/0814 take precedence)}
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H03K17/08112 3 {in bipolar transistor switches (H03K17/0812, H03K17/0814 take precedence)}
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H03K17/08116 3 {in composite switches (H03K17/0812, H03K17/0814 take precedence)}
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H03K17/0812 3 by measures taken in the control circuit
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H03K17/08122 4 {in field-effect transistor switches}
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H03K17/08124 4 {in thyristor switches}
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H03K17/08126 4 {in bipolar transitor switches}
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H03K17/08128 4 {in composite switches}
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H03K17/0814 3 by measures taken in the output circuit
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H03K17/08142 4 {in field-effect transistor switches}
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H03K17/08144 4 {in thyristor switches}
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H03K17/08146 4 {in bipolar transistor switches}
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H03K17/08148 4 {in composite switches}
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H03K17/082 2 by feedback from the output to the control circuit
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H03K17/0822 3 {in field-effect transistor switches}
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H03K17/0824 3 {in thyristor switches}
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H03K17/0826 3 {in bipolar transistor switches}
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H03K17/0828 3 {in composite switches}
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H03K17/10 1 Modifications for increasing the maximum permissible switched voltage
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H03K17/102 2 {in field-effect transistor switches}
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H03K17/105 2 {in thyristor switches}
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H03K17/107 2 {in composite switches}
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H03K17/12 1 Modifications for increasing the maximum permissible switched current
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H03K17/122 2 {in field-effect transistor switches}
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H03K17/125 2 {in thyristor switches}
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H03K17/127 2 {in composite switches}
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H03K17/13 1 Modifications for switching at zero crossing (generating an impulse at zero crossing H03K5/1536)
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H03K17/133 2 {in field-effect transistor switches}
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H03K17/136 2 {in thyristor switches}
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H03K17/14 1 Modifications for compensating variations of physical values, e.g. of temperature
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H03K17/145 2 {in field-effect transistor switches}
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H03K17/16 1 Modifications for eliminating interference voltages or currents
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H03K17/161 2 {in field-effect transistor switches}
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H03K17/162 3 {without feedback from the output circuit to the control circuit}
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H03K17/163 4 {Soft switching}
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H03K17/164 5 {using parallel switching arrangements}
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H03K17/165 3 {by feedback from the output circuit to the control circuit}
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H03K17/166 4 {Soft switching}
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H03K17/167 5 {using parallel switching arrangements}
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H03K17/168 2 {in composite switches}
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H03K17/18 1 Modifications for indicating state of switch
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H03K17/20 1 Modifications for resetting core switching units to a predetermined state
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H03K17/22 1 Modifications for ensuring a predetermined initial state when the supply voltage has been applied (bi-stable generators H03K3/12)
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H03K17/223 2 {in field-effect transistor switches}
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H03K2017/226 2 {in bipolar transistor switches}
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H03K17/24 2 Storing the actual state when the supply voltage fails
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H03K17/26 1 Modifications for temporary blocking after receipt of control pulses
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H03K17/28 1 Modifications for introducing a time delay before switching (modifications to provide a choice of time-intervals for executing more than one switching action H03K17/296)
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H03K17/284 2 in field effect transistor switches
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H03K17/288 2 in tube switches
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H03K17/292 2 in thyristor, unijunction transistor or programmable unijunction transistor switches
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H03K17/296 1 Time-programme switches providing a choice of time-intervals for executing more than one switching action and automatically terminating their operation after the programme is completed (electronic clocks comprising means to be operated at preselected times or after preselected time-intervals G04G15/00)
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H03K17/30 1 Modifications for providing a predetermined threshold before switching (shaping pulses by thresholding H03K5/08)
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H03K17/302 2 {in field-effect transistor switches}
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H03K17/305 2 {in thyristor switches}
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H03K2017/307 2 {circuits simulating a diode, e.g. threshold zero}
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H03K17/51 1 characterised by the components used (H03K17/04 - H03K17/30, H03K17/94 take precedence)
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H03K2017/515 2 {Mechanical switches; Electronic switches controlling mechanical switches, e.g. relais}
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H03K17/52 2 by the use, as active elements, of gas-filled tubes
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H03K17/54 2 by the use, as active elements of vacuum tubes (using diodes H03K17/74)
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H03K17/545 3 {using microengineered devices, e.g. field emission devices}
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H03K17/56 2 by the use, as active elements, of semiconductor devices (using diodes H03K17/74)
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H03K17/567 3 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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H03K17/58 3 the devices being tunnel diodes
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H03K17/60 3 the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72)
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H03K17/601 4 {using transformer coupling (H03K17/61 takes precedence)}
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H03K17/602 4 {in integrated circuits}
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H03K17/603 4 {with coupled emitters}
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H03K17/605 4 with galvanic isolation between the control circuit and the output circuit (H03K17/78 takes precedence)
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H03K17/61 5 using transformer coupling
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H03K17/615 4 in a Darlington configuration
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H03K17/62 4 Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00)
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H03K17/6207 5 {without selecting means (H03K17/6242 - H03K17/6285 take precedence)}
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H03K17/6214 6 {using current steering means}
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H03K17/6221 5 {combined with selecting means (H03K17/6242 - H03K17/6285 take precedence)}
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H03K17/6228 6 {using current steering means}
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H03K17/6235 5 {with storage of control signal}
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H03K17/6242 5 {with several inputs only and without selecting means}
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H03K17/625 6 {using current steering means}
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H03K17/6257 5 {with several inputs only combined with selecting means}
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H03K17/6264 6 {using current steering means}
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H03K17/6271 5 {with several outputs only and without selecting means}
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H03K17/6278 6 {using current steering means}
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H03K17/6285 5 {with several outputs only combined with selecting means}
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H03K17/6292 6 {using current steering means}
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H03K17/64 4 having inductive loads
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H03K17/66 4 Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
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H03K17/661 5 {connected to both load terminals}
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H03K17/662 6 {each output circuit comprising more than one controlled bipolar transistor}
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H03K17/663 7 {using complementary bipolar transistors}
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H03K17/664 7 {in a symmetrical configuration}
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H03K17/665 5 {connected to one load terminal only}
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H03K17/666 6 {the output circuit comprising more than one controlled bipolar transistor}
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H03K17/667 7 {using complementary bipolar transistors}
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H03K17/668 7 {in a symmetrical configuration}
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H03K17/68 4 specially adapted for switching ac currents or voltages
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H03K17/687 3 the devices being field-effect transistors
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H03K17/6871 4 {the output circuit comprising more than one controlled field-effect transistor}
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H03K17/6872 5 {using complementary field-effect transistors}
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H03K17/6874 5 {in a symmetrical configuration}
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H03K2017/6875 4 {using self-conductive, depletion FETs}
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H03K17/6877 4 {the control circuit comprising active elements different from those used in the output circuit}
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H03K2017/6878 4 {using multi-gate field-effect transistors}
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H03K17/689 4 with galvanic isolation between the control circuit and the output circuit (H03K17/78 takes precedence)
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H03K17/6895 5 {using acoustic means}
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H03K17/691 5 using transformer coupling
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H03K17/693 4 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00)
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H03K17/70 3 the devices having only two electrodes and exhibiting negative resistance (the devices being tunnel diodes H03K17/58)
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H03K17/72 3 having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
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H03K17/722 4 with galvanic isolation between the control circuit and the output circuit (H03K17/78 takes precedence)
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H03K17/7225 5 {using acoustic means}
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H03K17/723 5 using transformer coupling
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H03K17/725 4 for ac voltages or currents (H03K17/722, H03K17/735 take precedence)
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H03K17/73 4 for dc voltages or currents (H03K17/722, H03K17/735 take precedence)
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H03K17/731 5 {with inductive load}
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H03K17/732 5 Measures for enabling turn-off
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H03K17/735 4 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (H03K17/722 takes precedence; logic circuits H03K19/00; code converters H03M5/00, H03M7/00)
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H03K17/74 2 by the use, as active elements, of diodes (by the use of more than one type of semiconductor device H03K17/567; by the use of tunnel diodes H03K17/58; by the use of negative resistance diodes H03K17/70)
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H03K17/76 3 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00)
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H03K17/78 2 using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
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H03K17/785 3 controlling field-effect transistor switches
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H03K17/79 3 controlling {bipolar} semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
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H03K17/795 3 controlling bipolar transistors
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H03K17/7955 4 {using phototransistors}
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H03K17/80 2 using non-linear magnetic devices; using non-linear dielectric devices {(H03K17/95, H03K17/97 take precedence)}
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H03K17/81 3 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00)
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H03K17/82 3 the devices being transfluxors
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H03K17/84 3 the devices being thin-film devices
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H03K17/86 3 the devices being twistors
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H03K17/88 2 By the use, as active elements, of beam-deflection tubes
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H03K17/90 2 by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices (H03K17/95, H03K17/97 take precedence)
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H03K17/92 2 by the use, as active elements, of superconductive devices
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H03K17/94 1 characterised by the way in which the control signals are generated
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H03K17/941 2 {using an optical detector (H03K17/968 takes precedence)}
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H03K17/943 3 {using a plurality of optical emitters or detectors, e.g. keyboard}
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H03K17/945 2 Proximity switches (H03K17/96 takes precedence)
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H03K2017/9455 3 {constructional details (of proximity switches using a magnetic detector H03K17/9505)}
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H03K17/95 3 using a magnetic detector
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H03K17/9502 4 {Measures for increasing reliability}
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H03K17/9505 4 {Constructional details}
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H03K2017/9507 5 {with illumination}
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H03K17/951 4 {Measures for supplying operating voltage to the detector circuit}
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H03K17/9512 4 {using digital techniques}
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H03K17/9515 4 {using non-linear magnetic devices}
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H03K17/9517 4 {using galvanomagnetic devices}
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H03K17/952 4 {using inductive coils}
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H03K17/9522 5 {with a galvanically isolated probe}
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H03K17/9525 5 {controlled by an oscillatory signal (H03K17/9537 takes precedence)}
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H03K2017/9527 5 {Details of coils in the emitter or receiver; Magnetic detector comprising emitting and receiving coils}
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H03K17/953 5 {forming part of an oscillator (H03K17/9537 takes precedence)}
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H03K17/9532 6 {with variable frequency}
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H03K17/9535 6 {with variable amplitude}
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H03K17/9537 5 {in a resonant circuit}
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H03K17/954 6 {controlled by an oscillatory signal}
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H03K17/9542 6 {forming part of an oscillator}
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H03K17/9545 7 {with variable frequency}
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H03K17/9547 7 {with variable amplitude}
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H03K17/955 3 using a capacitive detector
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H03K17/96 2 Touch switches (specially adapted for electronic time-pieces with no moving parts G04G21/08)
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H03K2017/9602 3 {characterised by the type or shape of the sensing electrodes}
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H03K2017/9604 4 {characterised by the number of electrodes}
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H03K2017/9606 5 {using one electrode only per touch switch}
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H03K2017/9609 6 {where the electrode is the object to be switched}
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H03K2017/9611 6 {where the electrode is a plant}
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H03K2017/9613 5 {using two electrodes per touch switch}
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H03K2017/9615 5 {using three electrodes per touch switch}
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H03K17/9618 3 {using a plurality of detectors, e.g. keyboard}
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H03K17/962 3 {Capacitive touch switches}
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H03K17/9622 4 {using a plurality of detectors, e.g. keyboard}
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H03K17/9625 3 {using a force resistance transducer}
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H03K17/9627 3 {Optical touch switches}
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H03K17/9629 4 {using a plurality of detectors, e.g. keyboard}
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H03K17/9631 4 {using a light source as part of the switch}
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H03K2017/9634 5 {using organic light emitting devices, e.g. light emitting polymer [OEP] or OLED}
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H03K17/9636 5 {using a pulsed light source}
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H03K17/9638 4 {using a light guide}
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H03K17/964 3 {Piezo-electric touch switches}
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H03K17/9643 4 {using a plurality of detectors, e.g. keyboard}
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H03K17/9645 3 {Resistive touch switches}
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H03K17/9647 4 {using a plurality of detectors, e.g. keyboard}
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H03K17/965 2 Switches controlled by moving an element forming part of the switch
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H03K17/967 3 having a plurality of control members, e.g. keyboard (H03K17/969, H03K17/972, H03K17/98 take precedence)
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H03K17/968 3 using opto-electronic devices
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H03K17/969 4 having a plurality of control members, e.g. keyboard
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H03K17/97 3 using a magnetic movable element
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H03K2017/9706 4 {Inductive element}
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H03K2017/9713 4 {Multiposition, e.g. involving comparison with different thresholds}
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H03K17/972 4 having a plurality of control members, e.g. keyboard
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H03K17/975 3 using a capacitive movable element
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H03K2017/9755 4 {Ohmic switch;}
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H03K17/98 4 having a plurality of control members, e.g. keyboard
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H03K19/00 0 Logic circuits, i.e. having at least two inputs acting on one output (circuits for computer systems using fuzzy logic G06N7/02); Inverting circuits
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H03K19/0002 1 {Multistate logic (H03K19/02 takes precedence)}
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H03K19/0005 1 {Modifications of input or output impedance}
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H03K19/0008 1 {Arrangements for reducing power consumption}
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H03K19/001 2 {in bipolar transistor circuits}
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H03K19/0013 2 {in field effect transistor circuits}
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H03K19/0016 2 {by using a control or a clock signal, e.g. in order to apply power supply}
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H03K19/0019 2 {by energy recovery or adiabatic operation}
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H03K19/0021 1 {Modifications of threshold (for electronic switching or gating H03K17/30)}
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H03K19/0024 2 {in bipolar transistor circuits}
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H03K19/0027 2 {in field effect transistor circuits}
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H03K19/003 1 Modifications for increasing the reliability {for protection}
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H03K19/00307 2 {in bipolar transistor circuits}
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H03K19/00315 2 {in field-effect transistor circuits}
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H03K19/00323 2 {Delay compensation}
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H03K19/0033 2 {Radiation hardening}
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H03K19/00338 3 {In field effect transistor circuits}
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H03K19/00346 2 {Modifications for eliminating interference or parasitic voltages or currents}
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H03K19/00353 3 {in bipolar transistor circuits}
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H03K19/00361 3 {in field effect transistor circuits}
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H03K19/00369 2 {Modifications for compensating variations of temperature, supply voltage or other physical parameters}
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H03K19/00376 3 {in bipolar transistor circuits}
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H03K19/00384 3 {in field effect transistor circuits}
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H03K19/00392 2 {by circuit redundancy (H03K19/0075 takes precedence)}
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H03K19/007 1 Fail-safe circuits
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H03K19/0075 2 {by using two redundant chains}
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H03K19/01 1 Modifications for accelerating switching
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H03K19/013 2 in bipolar transistor circuits
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H03K19/0133 3 {by bootstrapping, i.e. by positive feed-back}
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H03K19/0136 3 {by means of a pull-up or down element}
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H03K19/017 2 in field-effect transistor circuits
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H03K19/01707 3 {in asynchronous circuits}
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H03K19/01714 4 {by bootstrapping, i.e. by positive feed-back}
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H03K19/01721 4 {by means of a pull-up or down element}
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H03K19/01728 3 {in synchronous circuits, i.e. by using clock signals}
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H03K19/01735 4 {by bootstrapping, i.e. by positive feed-back}
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H03K19/01742 4 {by means of a pull-up or down element}
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H03K19/0175 1 Coupling arrangements; Interface arrangements (interface arrangements for digital computers G06F3/00, G06F13/00)
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H03K19/017509 2 {Interface arrangements}
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H03K19/017518 3 {using a combination of bipolar and field effect transistors [BIFET]}
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H03K19/017527 4 {with at least one differential stage}
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H03K19/017536 3 {using opto-electronic devices}
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H03K19/017545 2 {Coupling arrangements; Impedance matching circuits}
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H03K19/017554 3 {using a combination of bipolar and field effect transistors [BIFET]}
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H03K19/017563 4 {with at least one differential stage}
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H03K19/017572 3 {using opto-electronic devices}
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H03K19/017581 2 {programmable}
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H03K19/01759 2 {with a bidirectional operation}
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H03K19/018 2 using bipolar transistors only
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H03K19/01806 3 {Interface arrangements}
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H03K19/01812 4 {with at least one differential stage}
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H03K19/01818 4 {for integrated injection logic (I2L)}
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H03K19/01825 3 {Coupling arrangements, impedance matching circuits}
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H03K19/01831 4 {with at least one differential stage}
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H03K19/01837 3 {programmable}
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H03K19/01843 3 {with a bidirectional operation}
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H03K19/0185 2 using field effect transistors only
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H03K19/018507 3 {Interface arrangements}
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H03K19/018514 4 {with at least one differential stage (H03K19/018528 and H03K19/018542 take precedence)}
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H03K19/018521 4 {of complementary type, e.g. CMOS}
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H03K19/018528 5 {with at least one differential stage}
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H03K19/018535 4 {of Schottky barrier type [MESFET]}
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H03K19/018542 5 {with at least one differential stage}
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H03K19/01855 4 {synchronous, i.e. using clock signals}
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H03K19/018557 3 {Coupling arrangements; Impedance matching circuits}
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H03K19/018564 4 {with at least one differential stage (H03K19/018578 takes precedence)}
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H03K19/018571 4 {of complementary type, e.g. CMOS}
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H03K19/018578 5 {with at least one differential stage}
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H03K19/018585 3 {programmable}
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H03K19/018592 3 {with a bidirectional operation}
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H03K19/02 1 using specified components ({H03K19/0005 - H03K19/0021}, H03K19/003 - H03K19/0175 take precedence)
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H03K19/04 2 using gas-filled tubes
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H03K19/06 2 using vacuum tubes (using diode rectifiers H03K19/12)
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H03K19/08 2 using semiconductor devices (H03K19/173 takes precedence; wherein the semiconductor devices are only diode rectifiers H03K19/12)
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H03K19/0806 3 {using charge transfer devices (DTC, CCD)}
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H03K19/0813 3 {Threshold logic}
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H03K19/082 3 using bipolar transistors
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H03K19/0823 4 {Multistate logic}
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H03K19/0826 5 {one of the states being the high impedance or floating state}
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H03K19/084 4 Diode-transistor logic
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H03K19/0843 5 {Complementary transistor logic [CTL]}
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H03K19/0846 5 {Schottky transistor logic [STL]}
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H03K19/086 4 Emitter coupled logic
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H03K19/0863 5 {Emitter function logic [EFL]; Base coupled logic [BCL]}
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H03K19/0866 5 {Stacked emitter coupled logic (H03K19/1738 takes precedence)}
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H03K19/088 4 Transistor-transistor logic
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H03K19/09 4 Resistor-transistor logic
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H03K19/091 4 Integrated injection logic or merged transistor logic
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H03K19/0912 5 {Static induction logic [STIL] (when the logic function is fullfilled by a fet H03K19/09414)}
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H03K19/0915 5 {Integrated schottky logic [ISL]}
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H03K19/0917 5 {Multistate logic}
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H03K19/094 3 using field-effect transistors
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H03K19/09403 4 {using junction field-effect transistors (H03K19/096 takes precedence)}
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H03K19/09407 5 {of the same canal type}
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H03K19/0941 5 {of complementary type}
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H03K19/09414 5 {with gate injection or static induction [STIL] (H03K19/0912 takes precedence)}
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H03K19/09418 5 {in combination with bipolar transistors [BIFET]}
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H03K19/09421 4 {Diode field-effect transistor logic (H03K19/0956, H03K19/096 take precedence)}
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H03K19/09425 4 {Multistate logic (H03K19/096 takes precedence)}
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H03K19/09429 5 {one of the states being the high impedance or floating state}
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H03K19/09432 4 {with coupled sources or source coupled logic (H03K19/096 takes precedence)}
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H03K19/09436 5 {Source coupled field-effect logic [SCFL]}
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H03K19/0944 4 using MOSFET {or insulated gate field-effect transistors, i.e. IGFET}(H03K19/096 takes precedence)
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H03K19/09441 5 {of the same canal type}
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H03K19/09443 6 {using a combination of enhancement and depletion transistors}
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H03K19/09445 7 {with active depletion transistors}
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H03K19/09446 6 {using only depletion transistors}
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H03K19/09448 5 {in combination with bipolar transistors [BIMOS]}
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H03K19/0948 5 using CMOS {or complementary insulated gate field-effect transistors}
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H03K19/09482 6 {using a combination of enhancement and depletion transistors}
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H03K19/09485 7 {with active depletion transistors}
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H03K19/09487 6 {using only depletion transistors}
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H03K19/0952 4 using Schottky type FET {MESFET}({H03K19/09421, H03K19/09432}, H03K19/096 take precedence)
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H03K19/0956 4 Schottky diode FET logic (H03K19/096 takes precedence)
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H03K19/096 4 Synchronous circuits, i.e. using clock signals {(H03K19/01728, H03K19/01855 take precedence)}
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H03K19/0963 5 {using transistors of complementary type (H03K19/0966 takes precedence)}
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H03K19/0966 5 {Self-timed logic}
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H03K19/098 3 using thyristors
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H03K19/10 3 using tunnel diodes
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H03K19/12 2 using diode rectifiers
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H03K19/14 2 using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled (optical logic elements G02F3/00)
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H03K19/16 2 using saturable magnetic devices
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H03K19/162 3 using parametrons
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H03K19/164 3 using ferro-resonant devices
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H03K19/166 3 using transfluxors
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H03K19/168 3 using thin-film devices
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H03K19/17 2 using twistors
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H03K19/173 2 using elementary logic circuits as components
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H03K19/1731 3 {Optimisation thereof}
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H03K19/1732 4 {by limitation or reduction of the pin/gate ratio (for data-processing equipment G06F1/22)}
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H03K19/1733 3 {Controllable logic circuits (H03K19/177 takes precedence)}
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H03K19/1735 4 {by wiring, e.g. uncommitted logic arrays}
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H03K19/1736 5 {in which the wiring can be modified}
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H03K19/1737 4 {using multiplexers (H03K19/1738 takes precedence)}
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H03K19/1738 4 {using cascode switch logic [CSL] or cascode emitter coupled logic [CECL]}
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H03K19/177 3 arranged in matrix form
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H03K19/17704 4 the logic functions being realised by the interconnection of rows and columns
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H03K19/17708 5 {using an AND matrix followed by an OR matrix, i.e. programmable logic arrays}
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H03K19/17712 6 {one of the matrices at least being reprogrammable}
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H03K19/17716 6 {with synchronous operation, i.e. using clock signals, e.g. of I/O or coupling register (H03K19/17712 takes precedence)}
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H03K19/1772 7 {with synchronous operation of at least one of the logical matrixes}
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H03K19/17724 4 Structural details of logic blocks
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H03K19/17728 5 Reconfigurable logic blocks, e.g. lookup tables
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H03K19/17732 5 Macroblocks
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H03K19/17736 4 Structural details of routing resources
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H03K19/1774 5 {for global signals, e.g. clock, reset}
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H03K19/17744 5 {for input/output signals}
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H03K19/17748 4 Structural details of configuration resources
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H03K19/17752 5 for hot reconfiguration
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H03K19/17756 5 for partial configuration or partial reconfiguration
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H03K19/17758 5 for speeding up configuration or reconfiguration
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H03K19/1776 5 for memories
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H03K19/17764 5 for reliability
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H03K19/17768 5 for security
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H03K19/17772 5 for powering on or off
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H03K19/1778 4 Structural details for adapting physical parameters
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H03K19/17784 5 for supply voltage
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H03K19/17788 5 for input/output [I/O] voltages
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H03K19/17792 5 for operating speed
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H03K19/17796 5 for physical disposition of blocks
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H03K19/18 2 using galvano-magnetic devices, e.g. Hall-effect devices
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H03K19/185 2 using dielectric elements with variable dielectric constant, e.g. ferro-electric capacitors
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H03K19/19 3 using ferro-resonant devices
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H03K19/195 2 using superconductive devices
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H03K19/1952 3 {with electro-magnetic coupling of the control current}
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H03K19/1954 3 {with injection of the control current}
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H03K19/1956 4 {using an inductorless circuit}
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H03K19/1958 3 {Hybrid configuration, i.e. using electromagnetic coupling and injection of the control current}
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H03K19/20 1 characterised by logic function, e.g. AND, OR, NOR, NOT circuits (H03K19/003 - H03K19/01 take precedence)
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H03K19/21 2 EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
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H03K19/212 3 {using bipolar transistors}
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H03K19/215 3 {using field-effect transistors}
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H03K19/217 4 {using Schottky type FET [MESFET]}
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H03K19/23 2 Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs
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H03K21/00 0 Details of pulse counters or frequency dividers
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H03K21/02 1 Input circuits
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H03K21/023 2 {comprising pulse shaping or differentiating circuits}
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H03K21/026 2 {comprising logic circuits}
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H03K21/08 1 Output circuits
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H03K21/10 2 comprising logic circuits
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H03K21/12 2 with parallel read-out
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H03K21/14 2 with series read-out of number stored
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H03K21/16 1 Circuits for carrying over pulses between successive decades
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H03K21/17 2 with field effect transistors
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H03K21/18 1 Circuits for visual indication of the result
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H03K21/20 2 using glow discharge lamps
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H03K21/38 1 Starting, stopping or resetting the counter (counters with a base other than a power of two H03K23/48, H03K23/66)
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H03K21/40 1 Monitoring; Error detection; Preventing or correcting improper counter operation
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H03K21/403 2 {Arrangements for storing the counting state in case of power supply interruption}
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H03K21/406 2 {Synchronisation of counters}
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H03K23/00 0 Pulse counters comprising counting chains; Frequency dividers comprising counting chains (H03K29/00 takes precedence)
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H03K23/001 1 {using elements not covered by groups H03K23/002 and H03K23/74 - H03K23/84}
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H03K23/002 1 {using semiconductor devices (H03K23/78, H03K23/80, H03K23/84 take precedence)}
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H03K23/004 1 {Counters counting in a non-natural counting order, e.g. random counters}
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H03K23/005 2 {using minimum change code, e.g. Gray Code}
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H03K23/007 2 {using excess three code}
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H03K23/008 2 {using biquinary code}
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H03K23/40 1 Gating or clocking signals applied to all stages, i.e. synchronous counters {(H03K23/74 - H03K23/84 take precedence)}
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H03K23/42 2 Out-of-phase gating or clocking signals applied to counter stages
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H03K23/425 3 {using bistables}
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H03K23/44 3 using field-effect transistors {(H03K23/46 and H03K23/425 take precedence)}
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H03K23/46 3 using charge transfer devices, i.e. bucket brigade or charge coupled devices
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H03K23/48 2 with a base or radix other than a power of two (H03K23/42 takes precedence)
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H03K23/483 3 {with a base which is an odd number}
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H03K23/486 3 {with a base which is a non-integer}
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H03K23/50 2 using bi-stable regenerative trigger circuits (H03K23/42 - H03K23/48 take precedence)
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H03K23/502 3 {with a base or a radix other than a power of two (H03K23/54 takes precedence)}
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H03K23/505 4 {with a base which is an odd number}
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H03K23/507 4 {with a base which is a non-integer}
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H03K23/52 3 using field-effect transistors
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H03K23/54 3 Ring counters, i.e. feedback shift register counters (H03K23/52 takes precedence)
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H03K23/542 4 {with crossed-couplings, i.e. Johnson counters}
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H03K23/544 4 {with a base which is an odd number}
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H03K23/546 4 {with a base which is a non-integer}
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H03K23/548 4 {Reversible counters}
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H03K23/56 3 Reversible counters (H03K23/52 {and H03K23/548} take precedence)
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H03K23/58 1 Gating or clocking signals not applied to all stages, i.e. asynchronous counters (H03K23/74 - H03K23/84 take precedence)
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H03K23/582 2 {with a base or a radix different of a power of two}
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H03K23/584 3 {with a base which is an odd number}
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H03K23/586 3 {with a base which is a non-integer}
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H03K23/588 2 {Combination of a synchronous and an asynchronous counter}
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H03K23/60 2 with field-effect transistors
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H03K23/62 2 reversible
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H03K23/64 1 with a base or radix other than a power of two (H03K23/40 - H03K23/62 take precedence)
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H03K23/66 2 with a variable counting base, e.g. by presetting or by adding or suppressing pulses
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H03K23/662 3 {by adding or suppressing pulses}
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H03K23/665 3 {by presetting}
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H03K23/667 3 {by switching the base during a counting cycle}
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H03K23/68 2 with a base which is a non-integer
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H03K23/70 2 with a base which is an odd number (H03K23/66 takes precedence)
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H03K23/72 2 Decade counters (H03K23/66 takes precedence)
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H03K23/74 1 using relays
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H03K23/76 1 using magnetic cores or ferro-electric capacitors
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H03K23/763 2 {using superconductive devices}
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H03K23/766 2 {using thin-film devices}
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H03K23/78 1 using opto-electronic devices
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H03K23/80 1 using semiconductor devices having only two electrodes, e.g. tunnel diode, multi-layer diode
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H03K23/82 1 using gas-filled tubes
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H03K23/825 2 {using vacuum tubes}
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H03K23/84 1 using thyristors or unijunction transistors
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H03K23/86 1 reversible (H03K23/40 - H03K23/84 take precedence)
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H03K25/00 0 Pulse counters with step-by-step integration and static storage; Analogous frequency dividers
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H03K25/02 1 comprising charge storage, e.g. capacitor without polarisation hysteresis
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H03K25/04 2 using auxiliary pulse generator triggered by the incoming pulses
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H03K25/12 1 comprising hysteresis storage
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H03K27/00 0 Pulse counters in which pulses are continuously circulated in a closed loop; Analogous frequency dividers (feedback shift register counters H03K23/54)
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H03K29/00 0 Pulse counters comprising multi-stable elements, e.g. for ternary scale, for decimal scale; Analogous frequency dividers
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H03K29/04 1 using multi-cathode gas discharge tubes
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H03K29/06 1 using beam-type tubes, e.g. magnetrons, cathode-ray tubes
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H03K99/00 0 Subject matter not provided for in other groups of this subclass
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H03K2217/00 0 Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
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H03K2217/0009 1 AC switches, i.e. delivering AC power to a load
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H03K2217/0018 1 Special modifications or use of the back gate voltage of a FET
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H03K2217/0027 1 Measuring means of, e.g. currents through or voltages across the switch
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H03K2217/0036 1 Means reducing energy consumption
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H03K2217/0045 1 Full bridges, determining the direction of the current through the load
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H03K2217/0054 1 Gating switches, e.g. pass gates
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H03K2217/0063 1 High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
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H03K2217/0072 1 Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
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H03K2217/0081 1 Power supply means, e.g. to the switch driver
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H03K2217/009 1 Resonant driver circuits
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H03K2217/94 1 characterised by the way in which the control signal is generated
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H03K2217/94005 2 activated by voice or sound
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H03K2217/9401 2 Calibration techniques
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H03K2217/94015 3 Mechanical, e.g. by displacement of a body, a shielding element, or a magnet, in or out of the sensing area
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H03K2217/94021 3 with human activation, e.g. processes requiring or being triggered by human intervention, user-input of digital word or analog voltage
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H03K2217/94026 3 Automatic threshold calibration; e.g. threshold automatically adapts to ambient conditions or follows variation of input
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H03K2217/94031 3 Calibration involving digital processing
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H03K2217/94036 2 Multiple detection, i.e. where different switching signals are generated after operation of the user is detected at different time instants at different locations during the actuation movement by two or more sensors of the same or different kinds
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H03K2217/94042 2 Means for reducing energy consumption
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H03K2217/94047 2 Cascode connected switches
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H03K2217/94052 2 with evaluation of actuation pattern or sequence, e.g. tapping
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H03K2217/94057 2 Rotary switches
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H03K2217/94063 3 with optical detection
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H03K2217/94068 3 with magnetic detection
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H03K2217/94073 3 with capacitive detection
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H03K2217/94078 3 with acoustic detection
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H03K2217/94084 2 Transmission of parameters among sensors or between sensor and remote station
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H03K2217/94089 3 Wireless transmission
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H03K2217/94094 3 Wired transmission, e.g. via bus connection or similar
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H03K2217/941 2 using an optical detector
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H03K2217/94102 3 characterised by the type of activation
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H03K2217/94104 4 using a light barrier
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H03K2217/94106 4 Passive activation of light sensor, e.g. by ambient light
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H03K2217/94108 4 making use of reflection
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H03K2217/94111 3 having more than one emitter
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H03K2217/94112 3 having more than one receiver
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H03K2217/94114 3 Optical multi axis
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H03K2217/94116 3 increasing reliability, fail-safe
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H03K2217/945 2 Proximity switches
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H03K2217/95 3 using a magnetic detector
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H03K2217/952 4 Detection of ferromagnetic and non-magnetic conductive targets
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H03K2217/954 4 Ferromagnetic case
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H03K2217/956 4 Negative resistance, e.g. LC inductive proximity switches
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H03K2217/958 4 involving transponders
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H03K2217/96 2 Touch switches
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H03K2217/96003 3 using acoustic waves, e.g. ultrasound
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H03K2217/96007 4 by reflection
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H03K2217/96011 4 with propagation, SAW or BAW
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H03K2217/96015 3 Constructional details for touch switches (for capacitive touch switches see H03K2217/9607)
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H03K2217/96019 4 using conductive paint
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H03K2217/96023 4 Details of electro-mechanic connections between different elements, e.g.: sensing plate and integrated circuit containing electronics
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H03K2217/96027 4 Piezoelectric snap spring
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H03K2217/96031 3 Combination of touch switch and LC display
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H03K2217/96035 3 by temperature detection, i.e. body heat
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H03K2217/96038 3 Inductive touch switches
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H03K2217/96042 3 with illumination
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H03K2217/96046 4 Key-pad combined with display, back-lit
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H03K2217/9605 3 Detection of leakage or discharge current across the touching body to ground
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H03K2217/96054 3 Double function: touch detection combined with detection of a movable element
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H03K2217/96058 3 Fail-safe touch switches, where switching takes place only after repeated touch
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H03K2217/96062 3 with tactile or haptic feedback
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H03K2217/96066 3 Thumbwheel, potentiometer, scrollbar or slider simulation by touch switch
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H03K2217/9607 3 Capacitive touch switches
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H03K2217/960705 4 Safety of capacitive touch and proximity switches, e.g. increasing reliability, fail-safe
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H03K2217/96071 4 characterised by the detection principle
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H03K2217/960715 5 Rc-timing; e.g. measurement of variation of charge time or discharge time of the sensor
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H03K2217/96072 5 Phase comparison, i.e. where a phase comparator receives at one input the signal directly from the oscillator, at a second input the same signal but delayed, with a delay depending on a sensing capacitance
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H03K2217/960725 5 Charge-transfer
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H03K2217/96073 5 Amplitude comparison
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H03K2217/960735 4 characterised by circuit details
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H03K2217/96074 5 Switched capacitor
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H03K2217/960745 5 Capacitive differential; e.g. comparison with reference capacitance
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H03K2217/96075 5 involving bridge circuit
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H03K2217/960755 4 Constructional details of capacitive touch and proximity switches
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H03K2217/96076 5 with spring electrode
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H03K2217/960765 5 Details of shielding arrangements
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H03K2217/96077 5 comprising an electrode which is floating
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H03K2217/960775 5 Emitter-receiver or "fringe" type detection, i.e. one or more field emitting electrodes and corresponding one or more receiving electrodes
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H03K2217/96078 5 Sensor being a wire or a strip, e.g. used in automobile door handles or bumpers
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H03K2217/960785 4 with illumination
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H03K2217/96079 5 using a single or more light guides
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H03K2217/960795 5 using organic light emitting devices, e.g. light emitting polymer [OEP] or OLED
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H03K2217/965 2 Switches controlled by moving an element forming part of the switch
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H03K2217/9651 3 the moving element acting on a force, e.g. pressure sensitive element
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H03K2217/9653 3 with illumination
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H03K2217/9655 4 using a single or more light guides
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H03K2217/9656 4 using organic light emitting devices, e.g. light emitting polymer [OEP] or OLED
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H03K2217/9658 3 Safety, e.g. fail-safe switching requiring a sequence of movements
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H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES (of dynamo-electric generators H02P)
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H03L1/00 0 Stabilisation of generator output against variations of physical values, e.g. power supply (automatic control H03L5/00, H03L7/00)
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H03L1/02 1 against variations of temperature only
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H03L1/021 2 {of generators comprising distributed capacitance and inductance}
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H03L1/022 2 {by indirect stabilisation, i.e. by generating an electrical correction signal which is a function of the temperature (H03L1/021 takes precedence)}
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H03L1/023 3 {by using voltage variable capacitance diodes}
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H03L1/025 4 {and a memory for digitally storing correction values}
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H03L1/026 3 {by using a memory for digitally storing correction values (H03L1/025 takes precedence)}
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H03L1/027 3 {by using frequency conversion means which is variable with temperature, e.g. mixer, frequency divider, pulse add/substract logic circuit (H03L1/023, H03L1/026 take precedence)}
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H03L1/028 2 {of generators comprising piezo-electric resonators (H03L1/021 and H03L1/022 take precedence; oscillation generators with a piezo-electric resonator per se H03B5/32)}
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H03L1/04 2 Constructional details for maintaining temperature constant
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H03L3/00 0 Starting of generators
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H03L5/00 0 Automatic control of voltage, current, or power
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H03L5/02 1 of power
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H03L7/00 0 Automatic control of frequency or phase; Synchronisation (tuning of resonant circuits in general H03J; synchronising in digital communication systems, see the relevant groups in class H04)
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H03L7/02 1 using a frequency discriminator comprising a passive frequency-determining element
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H03L7/04 2 wherein the frequency-determining element comprises distributed inductance and capacitance
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H03L7/06 1 using a reference signal applied to a frequency- or phase-locked loop
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H03L7/07 2 using several loops, e.g. for redundant clock signal generation (for indirect frequency synthesis H03L7/22)
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H03L7/08 2 Details of the phase-locked loop
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H03L7/0802 3 {the loop being adapted for reducing power consumption (H03L7/14 takes precedence)}
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H03L7/0805 3 {the loop being adapted to provide an additional control signal for use outside the loop}
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H03L7/0807 3 {concerning mainly a recovery circuit for the reference signal}
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H03L7/081 3 provided with an additional controlled phase shifter {(H03L7/0998 takes precedence)}
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H03L7/0812 4 {and where no voltage or current controlled oscillator is used}
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H03L7/0814 5 {the phase shifting device being digitally controlled}
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H03L7/0816 5 {the controlled phase shifter and the frequency- or phase-detection arrangement being connected to a common input}
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H03L7/0818 5 {the controlled phase shifter comprising coarse and fine delay or phase-shifting means}
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H03L7/083 3 the reference signal being additionally directly applied to the generator (direct frequency synchronisation without loop H03L7/24)
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H03L7/085 3 concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal (H03L7/10 takes precedence; frequency or phase detection comparison in general H03D3/00, H03D13/00)
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H03L7/087 4 using at least two phase detectors or a frequency and phase detector in the loop
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H03L7/089 4 the phase or frequency detector generating up-down pulses (H03L7/087 takes precedence)
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H03L7/0891 5 {the up-down pulses controlling source and sink current generators, e.g. a charge pump}
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H03L7/0893 6 {the up-down pulses controlling at least two source current generators or at least two sink current generators connected to different points in the loop}
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H03L7/0895 6 {Details of the current generators (H03L7/0893 takes precedence)}
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H03L7/0896 7 {the current generators being controlled by differential up-down pulses}
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H03L7/0898 7 {the source or sink current values being variable (H03L7/0896 takes precedence)}
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H03L7/091 4 the phase or frequency detector using a sampling device (H03L7/087 takes precedence)
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H03L7/093 4 using special filtering or amplification characteristics in the loop (H03L7/087 - H03L7/091 take precedence)
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H03L7/095 4 using a lock detector (H03L7/087 takes precedence)
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H03L7/097 4 using a comparator for comparing the voltages obtained from two frequency to voltage converters
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H03L7/099 3 concerning mainly the controlled oscillator of the loop
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H03L7/0991 4 {the oscillator being a digital oscillator, e.g. composed of a fixed oscillator followed by a variable frequency divider (H03L7/0995 takes precedence; fixed oscillators with means for selecting among various phases H03L7/0814)}
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H03L7/0992 5 {comprising a counter or a frequency divider}
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H03L7/0993 6 {and a circuit for adding and deleting pulses}
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H03L7/0994 5 {comprising an accumulator}
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H03L7/0995 4 {the oscillator comprising a ring oscillator}
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H03L7/0996 5 {Selecting a signal among the plurality of phase-shifted signals produced by the ring oscillator}
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H03L7/0997 5 {Controlling the number of delay elements connected in series in the ring oscillator}
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H03L7/0998 5 {using phase interpolation}
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H03L7/10 3 for assuring initial synchronisation or for broadening the capture range
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H03L7/101 4 {using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop (H03L7/113, H03L7/187 take precedence)}
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H03L7/102 5 {the additional signal being directly applied to the controlled loop oscillator}
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H03L7/103 6 {the additional signal being a digital signal}
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H03L7/104 4 {using an additional signal from outside the loop for setting or controlling a parameter in the loop (H03L7/107, H03L7/12 take precedence)}
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H03L7/105 4 {Resetting the controlled oscillator when its frequency is outside a predetermined limit}
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H03L7/107 4 using a variable transfer function for the loop, e.g. low pass filter having a variable bandwidth
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H03L7/1072 5 {by changing characteristics of the charge pump, e.g. changing the gain}
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H03L7/1075 5 {by changing characteristics of the loop filter, e.g. changing the gain, changing the bandwidth (H03L7/1072 takes precedence)}
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H03L7/1077 5 {by changing characteristics of the phase or frequency detection means (H03L7/1072 takes precedence)}
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H03L7/113 4 using frequency discriminator
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H03L7/12 4 using a scanning signal (tuning circuits with automatic scanning over a band of frequencies H03J7/18)
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H03L7/14 3 for assuring constant frequency when supply or correction voltages fail {or are interrupted}
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H03L7/141 4 {the phase-locked loop controlling several oscillators in turn}
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H03L7/143 4 {by switching the reference signal of the phase-locked loop}
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H03L7/145 5 {the switched reference signal being derived from the controlled oscillator output signal}
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H03L7/146 4 {by using digital means for generating the oscillator control signal (H03L7/141, H03L7/143 take precedence)}
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H03L7/148 5 {said digital means comprising a counter or a divider}
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H03L7/16 2 Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
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H03L7/18 3 using a frequency divider or counter in the loop (H03L7/20, H03L7/22 take precedence)
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H03L7/1803 4 {the counter or frequency divider being connected to a cycle or pulse swallowing circuit}
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H03L7/1806 4 {the frequency divider comprising a phase accumulator generating the frequency divided signal}
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H03L7/181 4 a numerical count result being used for locking the loop, the counter counting during fixed time intervals {(H03L7/1806 takes precedence)}
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H03L7/183 4 a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number {(H03L7/1806 takes precedence)}
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H03L7/185 5 using a mixer in the loop (H03L7/187 - H03L7/195 take precedence)
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H03L7/187 5 using means for coarse tuning the voltage controlled oscillator of the loop (H03L7/191 - H03L7/195 take precedence)
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H03L7/189 6 comprising a D/A converter for generating a coarse tuning voltage
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H03L7/191 5 using at least two different signals from the frequency divider or the counter for determining the time difference (H03L7/193, H03L7/195 take precedence)
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H03L7/193 5 the frequency divider/counter comprising a commutable pre-divider, e.g. a two modulus divider (pulse counters/frequency dividers H03K21/00 - H03K29/00)
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H03L7/195 5 in which the counter of the loop counts between two different non zero numbers, e.g. for generating an offset frequency (H03L7/193 takes precedence; pulse counters for predetermined counting H03K21/00 - H03K29/00)
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H03L7/197 4 a time difference being used for locking the loop, the counter counting between numbers which are variable in time or the frequency divider dividing by a factor variable in time, e.g. for obtaining fractional frequency division {(H03L7/1806 takes precedence)}
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H03L7/1972 5 {for reducing the locking time interval (H03L7/1974, H03L7/199 take precedence)}
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H03L7/1974 5 {for fractional frequency division}
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H03L7/1976 6 {using a phase accumulator for controlling the counter or frequency divider}
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H03L7/1978 7 {using a cycle or pulse removing circuit}
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H03L7/199 5 with reset of the frequency divider or the counter, e.g. for assuring initial synchronisation
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H03L7/20 3 using a harmonic phase-locked loop, i.e. a loop which can be locked to one of a number of harmonically related frequencies applied to it (H03L7/22 takes precedence)
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H03L7/22 3 using more than one loop
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H03L7/23 4 with pulse counters or frequency dividers
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H03L7/235 5 {Nested phase locked loops}
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H03L7/24 1 using a reference signal directly applied to the generator
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H03L7/26 1 using energy levels of molecules, atoms, or subatomic particles as a frequency reference
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H03L9/00 0 Automatic control not provided for in other groups of this subclass
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H03L2207/00 0 Indexing scheme relating to automatic control of frequency or phase and to synchronisation
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H03L2207/04 1 Modifications for maintaining constant the phase-locked loop damping factor when other loop parameters change
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H03L2207/05 1 Compensating for non-linear characteristics of the controlled oscillator
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H03L2207/06 1 Phase locked loops with a controlled oscillator having at least two frequency control terminals
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H03L2207/08 1 Modifications of the phase-locked loop for ensuring constant frequency when the power supply fails or is interrupted, e.g. for saving power
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H03L2207/10 1 Indirect frequency synthesis using a frequency multiplier in the phase-locked loop or in the reference signal path
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H03L2207/12 1 Indirect frequency synthesis using a mixer in the phase-locked loop
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H03L2207/14 1 Preventing false-lock or pseudo-lock of the PLL
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H03L2207/18 1 Temporarily disabling, deactivating or stopping the frequency counter or divider
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H03L2207/50 1 All digital phase-locked loop
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H03M CODING; DECODING; CODE CONVERSION IN GENERAL (using fluidic means F15C4/00; optical analogue/digital converters G02F7/00; coding, decoding or code conversion, specially adapted for particular applications, see the relevant subclasses, e.g. G01D, G01R, G06F, G06T, G09G, G10L, G11B, G11C, H04B, H04L, H04M, H04N; ciphering or deciphering for cryptography or other purposes involving the need for secrecy G09C)
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H03M1/00 0 Analogue/digital conversion; Digital/analogue conversion (conversion of analogue values to or from differential modulation H03M3/00)
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H03M1/001 1 {Analogue/digital/analogue conversion}
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H03M1/002 1 {Provisions or arrangements for saving power, e.g. by allowing a sleep mode, using lower supply voltage for downstream stages, using multiple clock domains or by selectively turning on stages when needed}
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H03M1/004 1 {Reconfigurable analogue/digital or digital/analogue converters (H03M1/02 takes precedence)}
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H03M1/005 2 {among different converters types}
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H03M1/007 2 {among different resolutions}
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H03M1/008 2 {among different conversion characteristics, e.g. between mu-255 and a-laws}
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H03M1/02 1 Reversible analogue/digital converters
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H03M1/04 1 using stochastic techniques
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H03M1/06 1 Continuously compensating for, or preventing, undesired influence of physical parameters (periodically, {e.g. by using stored correction values,} H03M1/10)
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H03M1/0602 2 {of deviations from the desired transfer characteristic (H03M1/0617 takes precedence)}
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H03M1/0604 3 {at one point, i.e. by adjusting a single reference value, e.g. bias or gain error (gain setting for range control H03M1/18)}
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H03M1/0607 4 {Offset or drift compensation (removal of offset already present on the analogue input signal H03M1/1295)}
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H03M1/0609 3 {at two points of the transfer characteristic, i.e. by adjusting two reference values, e.g. offset and gain error}
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H03M1/0612 3 {over the full range of the converter, e.g. for correcting differential non-linearity}
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H03M1/0614 2 {of harmonic distortion (H03M1/0617 takes precedence)}
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H03M1/0617 2 {characterised by the use of methods or means not specific to a particular type of detrimental influence}
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H03M1/0619 3 {by dividing out the errors, i.e. using a ratiometric arrangement}
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H03M1/0621 4 {with auxiliary conversion of a value corresponding to the physical parameter(s) to be compensated for}
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H03M1/0624 3 {by synchronisation}
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H03M1/0626 3 {by filtering}
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H03M1/0629 4 {Anti-aliasing}
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H03M1/0631 4 {Smoothing}
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H03M1/0634 3 {by averaging out the errors, e.g. using sliding scale}
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H03M1/0636 4 {in the amplitude domain}
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H03M1/0639 5 {using dither, e.g. using triangular or sawtooth waveforms (for increasing resolution H03M1/201)}
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H03M1/0641 6 {the dither being a random signal}
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H03M1/0643 4 {in the spatial domain}
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H03M1/0646 5 {by analogue redistribution among corresponding nodes of adjacent cells, e.g. using an impedance network connected among all comparator outputs in a flash converter}
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H03M1/0648 5 {by arranging the quantisation value generators in a non-sequential pattern layout, e.g. symmetrical}
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H03M1/0651 5 {by selecting the quantisation value generators in a non-sequential order, e.g. symmetrical}
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H03M1/0653 6 {the order being based on measuring the error}
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H03M1/0656 4 {in the time domain, e.g. using intended jitter as a dither signal}
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H03M1/0658 5 {by calculating a running average of a number of subsequent samples}
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H03M1/066 5 {by continuously permuting the elements used, i.e. dynamic element matching}
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H03M1/0663 6 {using clocked averaging}
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H03M1/0665 6 {using data dependent selection of the elements, e.g. data weighted averaging}
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H03M1/0668 7 {the selection being based on the output of noise shaping circuits for each element}
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H03M1/067 6 {using different permutation circuits for different parts of the digital signal}
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H03M1/0673 6 {using random selection of the elements (with data-controlled random generator H03M1/0665)}
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H03M1/0675 3 {using redundancy}
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H03M1/0678 4 {using additional components or elements, e.g. dummy components}
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H03M1/068 5 {the original and additional components or elements being complementary to each other, e.g. CMOS}
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H03M1/0682 6 {using a differential network structure, i.e. symmetrical with respect to ground}
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H03M1/0685 6 {using real and complementary patterns}
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H03M1/0687 4 {using fault-tolerant coding, e.g. parity check, error correcting codes (H03M1/069 takes precedence)}
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H03M1/069 4 {by range overlap between successive stages or steps}
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H03M1/0692 5 {using a diminished radix representation, e.g. radix 1.95}
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H03M1/0695 5 {using less than the maximum number of output states per stage or step, e.g. 1.5 per stage or less than 1.5 bit per stage type}
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H03M1/0697 4 {in time, e.g. using additional comparison cycles}
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H03M1/08 2 of noise {(H03M1/0617 takes precedence)}
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H03M1/0809 3 {of bubble errors, i.e. irregularities in thermometer codes}
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H03M1/0818 3 {of clock feed-through}
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H03M1/0827 3 {of electromagnetic or electrostatic field noise, e.g. preventing crosstalk by shielding or optical isolation}
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H03M1/0836 3 {of phase error, e.g. jitter}
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H03M1/0845 3 {of power supply variations, e.g. ripple}
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H03M1/0854 3 {of quantisation noise}
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H03M1/0863 3 {of switching transients, e.g. glitches}
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H03M1/0872 4 {by disabling changes in the output during the transitions, e.g. by holding or latching}
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H03M1/0881 4 {by forcing a gradual change from one output level to the next, e.g. soft-start}
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H03M1/089 3 {of temperature variations}
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H03M1/10 1 Calibration or testing
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H03M1/1004 2 {without interrupting normal operation, e.g. by providing an additional component for temporarily replacing components to be tested or calibrated (H03M1/1009, H03M1/1071 take precedence)}
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H03M1/1009 2 {Calibration}
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H03M1/1014 3 {at one point of the transfer characteristic, i.e. by adjusting a single reference value, e.g. bias or gain error (gain setting for range control H03M1/18)}
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H03M1/1019 4 {by storing a corrected or correction value in a digital look-up table}
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H03M1/1023 4 {Offset correction (H03M1/1019 takes precedence; removal of offset already present on the analogue input signal H03M1/1295)}
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H03M1/1028 3 {at two points of the transfer characteristic, i.e. by adjusting two reference values, e.g. offset and gain error (gain setting for range control H03M1/18)}
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H03M1/1033 3 {over the full range of the converter, e.g. for correcting differential non-linearity}
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H03M1/1038 4 {by storing corrected or correction values in one or more digital look-up tables (H03M1/1057 takes precedence)}
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H03M1/1042 5 {the look-up table containing corrected values for replacing the original digital values (H03M1/1052 takes precedence)}
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H03M1/1047 5 {using an auxiliary digital/analogue converter for adding the correction values to the analogue signal (H03M1/1052 takes precedence)}
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H03M1/1052 5 {using two or more look-up tables each corresponding to a different type of error, e.g. for offset, gain error and non-linearity error respectively}
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H03M1/1057 4 {by trimming, i.e. by individually adjusting at least part of the quantisation value generators or stages to their nominal values}
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H03M1/1061 5 {using digitally programmable trimming circuits}
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H03M1/1066 2 {Mechanical or optical alignment}
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H03M1/1071 2 {Measuring or testing}
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H03M1/1076 3 {Detection or location of converter hardware failure, e.g. power supply failure, open or short circuit}
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H03M1/108 3 {Converters having special provisions for facilitating access for testing purposes}
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H03M1/1085 3 {using domain transforms, e.g. Fast Fourier Transform}
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H03M1/109 3 {for dc performance, i.e. static testing (H03M1/1085 takes precedence)}
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H03M1/1095 3 {for ac performance, i.e. dynamic testing (H03M1/1085 takes precedence)}
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H03M1/12 1 Analogue/digital converters ({H03M1/001 – } H03M1/10 take precedence)
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H03M1/1205 2 {Multiplexed conversion systems}
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H03M1/121 3 {Interleaved, i.e. using multiple converters or converter parts for one channel}
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H03M1/1215 4 {using time-division multiplexing}
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H03M1/122 3 {Shared using a single converter or a part thereof for multiple channels, e.g. a residue amplifier for multiple stages}
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H03M1/1225 4 {using time-division multiplexing}
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H03M1/123 3 {Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters}
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H03M1/1235 2 {Non-linear conversion not otherwise provided for in subgroups of H03M1/12}
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H03M1/124 2 {Sampling or signal conditioning arrangements specially adapted for A/D converters}
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H03M1/1245 3 {Details of sampling arrangements or methods}
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H03M1/125 4 {Asynchronous, i.e. free-running operation within each conversion cycle}
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H03M1/1255 4 {Synchronisation of the sampling frequency or phase to the input frequency or phase}
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H03M1/126 4 {Multi-rate systems, i.e. adaptive to different fixed sampling rates}
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H03M1/1265 4 {Non-uniform sampling}
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H03M1/127 5 {at intervals varying with the rate of change of the input signal}
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H03M1/1275 6 {at extreme values only}
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H03M1/128 5 {at random intervals, e.g. digital alias free signal processing [DASP]}
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H03M1/1285 4 {Synchronous circular sampling, i.e. using undersampling of periodic input signals}
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H03M1/129 3 {Means for adapting the input signal to the range the converter can handle, e.g. limiting, pre-scaling (H03M1/18 takes precedence); Out-of-range indication}
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H03M1/1295 4 {Clamping, i.e. adjusting the DC level of the input signal to a predetermined value}
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H03M1/14 2 Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit
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H03M1/141 3 {in which at least one step is of the folding type; Folding stages therefore}
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H03M1/142 3 {the reference generators for the steps being arranged in a common two-dimensional array}
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H03M1/143 3 {in pattern-reading type converters, e.g. having both absolute and incremental tracks on one disc or strip (H03M1/16 takes precedence)}
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H03M1/144 3 {the steps being performed sequentially in a single stage, i.e. recirculation type (H03M1/141, H03M1/143, H03M1/16 take precedence)}
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H03M1/145 3 {the steps being performed sequentially in series-connected stages (H03M1/141, H03M1/143, H03M1/16 take precedence)}
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H03M1/146 4 {all stages being simultaneous converters}
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H03M1/147 5 {at least two of which share a common reference generator}
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H03M1/148 6 {the reference generator being arranged in a two-dimensional array}
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H03M1/16 3 with scale factor modification, i.e. by changing the amplification between the steps {(H03M1/141 takes precedence)}
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H03M1/161 4 {in pattern-reading type converters, e.g. with gearings}
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H03M1/162 4 {the steps being performed sequentially in a single stage, i.e. recirculation type (H03M1/161 takes precedence)}
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H03M1/164 4 {the steps being performed sequentially in series-connected stages (H03M1/161 takes precedence)}
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H03M1/165 5 {in which two or more residues with respect to different reference levels in a stage are used as input signals for the next stage, i.e. multi-residue type}
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H03M1/167 5 {all stages comprising simultaneous converters (H03M1/165 takes precedence)}
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H03M1/168 6 {and delivering the same number of bits}
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H03M1/18 2 Automatic control for modifying the range of signals the converter can handle, e.g. gain ranging
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H03M1/181 3 {in feedback mode, i.e. by determining the range to be selected from one or more previous digital output values}
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H03M1/182 4 {the feedback signal controlling the reference levels of the analogue/digital converter}
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H03M1/183 4 {the feedback signal controlling the gain of an amplifier or attenuator preceding the analogue/digital converter}
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H03M1/185 5 {the determination of the range being based on more than one digital output value, e.g. on a running average, a power estimation or the rate of change}
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H03M1/186 3 {in feedforward mode, i.e. by determining the range to be selected directly from the input signal}
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H03M1/187 4 {using an auxiliary analogue/digital converter}
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H03M1/188 3 {Multi-path, i.e. having a separate analogue/digital converter for each possible range}
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H03M1/20 2 Increasing resolution using an n bit system to obtain n + m bits
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H03M1/201 3 {by dithering}
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H03M1/202 3 {by interpolation}
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H03M1/203 4 {using an analogue interpolation circuit}
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H03M1/204 5 {in which one or more virtual intermediate reference signals are generated between adjacent original reference signals, e.g. by connecting pre-amplifier outputs to multiple comparators}
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H03M1/205 6 {using resistor strings for redistribution of the original reference signals or signals derived therefrom}
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H03M1/206 4 {using a logic interpolation circuit}
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H03M1/207 4 {using a digital interpolation circuit}
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H03M1/208 3 {by prediction}
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H03M1/22 2 pattern-reading type
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H03M1/24 3 using relatively movable reader and disc or strip
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H03M1/245 4 {Constructional details of parts relevant to the encoding mechanism, e.g. pattern carriers, pattern sensors}
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H03M1/26 4 with weighted coding, i.e. the weight given to a digit depends on the position of the digit within the block or code word, e.g. there is a given radix and the weights are powers of this radix
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H03M1/28 4 with non-weighted coding
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H03M1/282 5 {of the pattern-shifting type, e.g. pseudo-random chain code}
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H03M1/285 5 {of the unit Hamming distance type, e.g. Gray code}
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H03M1/287 5 {using gradually changing slit width or pitch within one track; using plural tracks having slightly different pitches, e.g. of the Vernier or nonius type}
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H03M1/30 5 incremental
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H03M1/301 6 {Constructional details of parts relevant to the encoding mechanism, e.g. pattern carriers, pattern sensors}
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H03M1/303 6 {Circuits or methods for processing the quadrature signals}
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H03M1/305 7 {for detecting the direction of movement}
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H03M1/306 7 {for waveshaping}
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H03M1/308 6 {with additional pattern means for determining the absolute position, e.g. reference marks}
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H03M1/32 3 using cathode-ray tubes {or analoguous two-dimensional deflection systems}
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H03M1/34 2 Analogue value compared with reference values (H03M1/48 takes precedence)
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H03M1/345 3 {for direct conversion to a residue number representation}
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H03M1/36 3 simultaneously only, i.e. parallel type
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H03M1/361 4 {having a separate comparator and reference value for each quantisation level, i.e. full flash converter type}
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H03M1/362 5 {the reference values being generated by a resistive voltage divider}
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H03M1/363 6 {the voltage divider taps being held in a floating state, e.g. by feeding the divider by current sources}
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H03M1/365 6 {the voltage divider being a single resistor string}
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H03M1/366 5 {using current mode circuits, i.e. circuits in which the information is represented by current values rather than by voltage values}
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H03M1/367 4 {Non-linear conversion}
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H03M1/368 4 {having a single comparator per bit, e.g. of the folding type}
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H03M1/38 3 sequentially only, e.g. successive approximation type (converting more than one bit per step H03M1/14)
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H03M1/40 4 recirculation type
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H03M1/403 5 {using switched capacitors}
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H03M1/406 5 {using current mode circuits, i.e. circuits in which the information is represented by current values rather than by voltage values}
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H03M1/42 4 Sequential comparisons in series-connected stages with no change in value of analogue signal
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H03M1/44 4 Sequential comparisons in series-connected stages with change in value of analogue signal
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H03M1/442 5 {using switched capacitors}
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H03M1/445 5 {the stages being of the folding type}
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H03M1/447 5 {using current mode circuits, i.e. circuits in which the information is represented by current values rather than by voltage values}
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H03M1/46 4 with digital/analogue converter for supplying reference values to converter
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H03M1/462 5 {Details of the control circuitry, e.g. of the successive approximation register}
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H03M1/464 5 {Non-linear conversion}
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H03M1/466 5 {using switched capacitors}
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H03M1/468 6 {in which the input S/H circuit is merged with the feedback DAC array}
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H03M1/48 2 Servo-type converters
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H03M1/485 3 {for position encoding, e.g. using resolvers or synchros}
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H03M1/50 2 with intermediate conversion to time interval (H03M1/64 takes precedence)
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H03M1/502 3 {using tapped delay lines}
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H03M1/504 3 {using pulse width modulation}
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H03M1/506 4 {the pulse width modulator being of the charge-balancing type}
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H03M1/508 4 {the pulse width modulator being of the self-oscillating type}
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H03M1/52 3 Input signal integrated with linear return to datum
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H03M1/54 3 Input signal sampled and held with linear return to datum
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H03M1/56 3 Input signal compared with linear ramp
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H03M1/58 3 Non-linear conversion
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H03M1/60 2 with intermediate conversion to frequency of pulses
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H03M1/62 3 Non-linear conversion
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H03M1/64 2 with intermediate conversion to phase of sinusoidal {or similar periodical} signals
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H03M1/645 3 {for position encoding, e.g. using resolvers or synchros (H03M1/485 takes precedence)}
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H03M1/66 1 Digital/analogue converters ({H03M1/001 – } H03M1/10 take precedence)
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H03M1/661 2 {Improving the reconstruction of the analogue output signal beyond the resolution of the digital input signal, e.g. by interpolation, by curve-fitting, by smoothing}
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H03M1/662 2 {Multiplexed conversion systems}
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H03M1/664 2 {Non-linear conversion not otherwise provided for in subgroups of H03M1/66}
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H03M1/665 2 {with intermediate conversion to phase of sinusoidal or similar periodical signals}
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H03M1/667 2 {Recirculation type}
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H03M1/668 2 {Servo-type converters}
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H03M1/68 2 with conversions of different sensitivity, i.e. one conversion relating to the more significant digital bits and another conversion to the less significant bits
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H03M1/682 3 {both converters being of the unary decoded type}
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H03M1/685 4 {the quantisation value generators of both converters being arranged in a common two-dimensional array}
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H03M1/687 3 {Segmented, i.e. the more significant bit converter being of the unary decoded type and the less significant bit converter being of the binary weighted type}
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H03M1/70 2 Automatic control for modifying converter range
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H03M1/72 2 Sequential conversion in series-connected stages (H03M1/68 takes precedence)
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H03M1/74 2 Simultaneous conversion
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H03M1/742 3 {using current sources as quantisation value generators}
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H03M1/745 4 {with weighted currents}
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H03M1/747 4 {with equal currents which are switched by unary decoded digital signals}
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H03M1/76 3 using switching tree
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H03M1/765 4 {using a single level of switches which are controlled by unary decoded digital signals}
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H03M1/78 3 using ladder network
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H03M1/785 4 {using resistors, i.e. R-2R ladders}
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H03M1/80 3 using weighted impedances (H03M1/76 takes precedence)
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H03M1/802 4 {using capacitors, e.g. neuron-mos transistors, charge coupled devices}
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H03M1/804 5 {with charge redistribution}
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H03M1/806 6 {with equally weighted capacitors which are switched by unary decoded digital signals}
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H03M1/808 4 {using resistors}
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H03M1/82 2 with intermediate conversion to time interval
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H03M1/822 3 {using pulse width modulation}
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H03M1/825 4 {by comparing the input signal with a digital ramp signal}
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H03M1/827 4 {in which the total pulse width is distributed over multiple shorter pulse widths}
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H03M1/84 3 Non-linear conversion
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H03M1/86 2 with intermediate conversion to frequency of pulses
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H03M1/88 3 Non-linear conversion
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H03M3/00 0 Conversion of analogue values to or from differential modulation
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H03M3/02 1 Delta modulation, i.e. one-bit differential modulation {(H03M3/30 takes precedence)}
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H03M3/022 2 {with adaptable step size, e.g. adaptive delta modulation [ADM]}
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H03M3/024 3 {using syllabic companding, e.g. continuously variable slope delta modulation [CVSD]}
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H03M3/04 1 Differential modulation with several bits {, e.g. differential pulse code modulation [DPCM] (H03M3/30 takes precedence)}
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H03M3/042 2 {with adaptable step size, e.g. adaptive differential pulse code modulation [ADPCM]}
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H03M3/30 1 {Delta-sigma modulation}
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H03M3/32 2 {with special provisions or arrangements for power saving, e.g. by allowing a sleep mode, using lower supply voltage for downstream stages, using multiple clock domains, by selectively turning on stages when needed}
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H03M3/322 2 {Continuously compensating for, or preventing, undesired influence of physical parameters (periodically, e.g. by using stored correction values, H03M3/378)}
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H03M3/324 3 {characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement}
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H03M3/326 4 {by averaging out the errors}
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H03M3/328 5 {using dither}
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H03M3/3283 6 {the dither being in the time domain}
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H03M3/3287 6 {the dither being at least partially dependent on the input signal}
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H03M3/33 6 {the dither being a random signal}
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H03M3/332 7 {in particular a pseudo-random signal}
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H03M3/338 5 {by permutation in the time domain, e.g. dynamic element matching (in multiple bit sub-converters H03M1/066)}
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H03M3/34 6 {by chopping}
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H03M3/342 6 {by double sampling, e.g. correlated double sampling}
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H03M3/344 4 {by filtering other than the noise-shaping inherent to delta-sigma modulators, e.g. anti-aliasing}
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H03M3/346 4 {by suppressing active signals at predetermined times, e.g. muting, using non-overlapping clock phases}
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H03M3/348 5 {using return-to-zero signals}
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H03M3/35 4 {using redundancy}
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H03M3/352 3 {of deviations from the desired transfer characteristic}
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H03M3/354 4 {at one point, i.e. by adjusting a single reference value, e.g. bias or gain error}
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H03M3/356 5 {Offset or drift compensation (removal of offset already present on the analogue input signal H03M3/494)}
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H03M3/358 3 {of non-linear distortion, e.g. instability (avoiding instability by structural design H03M3/44)}
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H03M3/36 4 {by temporarily adapting the operation upon detection of instability conditions}
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H03M3/362 5 {in feedback mode, e.g. by reducing the order of the modulator}
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H03M3/364 6 {by resetting one or more loop filter stages}
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H03M3/366 5 {in feed-forward mode, e.g. using look-ahead circuits}
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H03M3/368 3 {of noise other than the quantisation noise already being shaped inherently by delta-sigma modulators}
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H03M3/37 4 {Compensation or reduction of delay or phase error}
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H03M3/372 5 {Jitter reduction}
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H03M3/374 5 {Relaxation of settling time constraints, e.g. slew rate enhancement}
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H03M3/376 4 {Prevention or reduction of switching transients, e.g. glitches}
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H03M3/378 2 {Testing}
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H03M3/38 2 {Calibration}
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H03M3/382 3 {at one point of the transfer characteristic, i.e. by adjusting a single reference value, e.g. bias or gain error}
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H03M3/384 4 {Offset correction (removal of offset already present on the analogue input signal H03M3/494)}
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H03M3/386 3 {over the full range of the converter, e.g. for correcting differential non-linearity}
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H03M3/388 4 {by storing corrected or correction values in one or more digital look-up tables}
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H03M3/39 2 {Structural details of delta-sigma modulators, e.g. incremental delta-sigma modulators (of digital delta-sigma modulators H03M7/3004)}
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H03M3/392 3 {Arrangements for selecting among plural operation modes, e.g. for multi-standard operation}
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H03M3/394 4 {among different orders of the loop filter}
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H03M3/396 4 {among different frequency bands}
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H03M3/398 4 {among different converter types}
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H03M3/40 3 {Arrangements for handling quadrature signals, e.g. complex modulators}
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H03M3/402 3 {Arrangements specific to bandpass modulators}
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H03M3/404 4 {characterised by the type of bandpass filters used}
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H03M3/406 5 {by the use of a pair of integrators forming a closed loop}
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H03M3/408 5 {by the use of an LC circuit}
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H03M3/41 4 {combined with modulation to or demodulation from the carrier}
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H03M3/412 3 {characterised by the number of quantisers and their type and resolution}
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H03M3/414 4 {having multiple quantisers arranged in cascaded loops, each of the second and further loops processing the quantisation error of the loop preceding it, i.e. multiple stage noise shaping [MASH] type}
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H03M3/416 5 {all these quantisers being multiple bit quantisers}
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H03M3/418 5 {all these quantisers being single bit quantisers}
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H03M3/42 4 {having multiple quantisers arranged in parallel loops}
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H03M3/422 4 {having one quantiser only}
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H03M3/424 5 {the quantiser being a multiple bit one}
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H03M3/426 6 {the quantiser being a successive approximation type analogue/digital converter}
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H03M3/428 6 {with lower resolution, e.g. single bit, feedback}
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H03M3/43 5 {the quantiser being a single bit one}
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H03M3/432 6 {the quantiser being a pulse width modulation type analogue/digital converter, i.e. differential pulse width modulation}
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H03M3/434 6 {with multi-level feedback}
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H03M3/436 3 {characterised by the order of the loop filter, e.g. error feedback type}
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H03M3/438 4 {the modulator having a higher order loop filter in the feedforward path}
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H03M3/44 5 {with provisions for rendering the modulator inherently stable}
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H03M3/442 6 {by restricting the swing within the loop, e.g. gain scaling}
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H03M3/444 7 {using non-linear elements, e.g. limiters}
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H03M3/446 6 {by a particular choice of poles or zeroes in the z-plane, e.g. by positioning zeroes outside the unit circle, i.e. causing the modulator to operate in a chaotic regime}
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H03M3/448 7 {by removing part of the zeroes, e.g. using local feedback loops}
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H03M3/45 5 {with distributed feedforward inputs, i.e. with forward paths from the modulator input to more than one filter stage}
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H03M3/452 5 {with weighted feedforward summation, i.e. with feedforward paths from more than one filter stage to the quantiser input}
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H03M3/454 5 {with distributed feedback, i.e. with feedback paths from the quantiser output to more than one filter stage}
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H03M3/456 4 {the modulator having a first order loop filter in the feedforward path}
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H03M3/458 2 {Analogue/digital converters using delta-sigma modulation as an intermediate step}
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H03M3/46 3 {using a combination of at least one delta-sigma modulator in series with at least one analogue/digital converter of a different type}
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H03M3/462 3 {Details relating to the decimation process (decimation filters in general H03H17/0416, H03H17/0621)}
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H03M3/464 3 {Details of the digital/analogue conversion in the feedback path}
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H03M3/466 3 {Multiplexed conversion systems}
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H03M3/468 4 {Interleaved, i.e. using multiple converters or converter parts for one channel, e.g. using Hadamard codes, pi-delta-sigma converters}
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H03M3/47 5 {using time-division multiplexing}
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H03M3/472 4 {Shared, i.e. using a single converter for multiple channels}
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H03M3/474 5 {using time-division multiplexing}
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H03M3/476 3 {Non-linear conversion systems}
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H03M3/478 3 {Means for controlling the correspondence between the range of the input signal and the range of signals the converter can handle; Means for out-of-range indication}
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H03M3/48 4 {characterised by the type of range control, e.g. limiting}
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H03M3/482 5 {by adapting the quantisation step size}
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H03M3/484 6 {by adapting the gain of the feedback signal, e.g. by adapting the reference values of the digital/analogue converter in the feedback path}
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H03M3/486 5 {by adapting the input gain}
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H03M3/488 4 {using automatic control}
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H03M3/49 5 {in feedback mode, i.e. by determining the range to be selected from one or more previous digital output values}
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H03M3/492 5 {in feed forward mode, i.e. by determining the range to be selected directly from the input signal}
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H03M3/494 3 {Sampling or signal conditioning arrangements specially adapted for delta-sigma type analogue/digital conversion systems}
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H03M3/496 4 {Details of sampling arrangements or methods}
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H03M3/498 5 {Variable sample rate}
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H03M3/50 2 {Digital/analogue converters using delta-sigma modulation as an intermediate step (digital delta-sigma modulators per se H03M7/3004)}
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H03M3/502 3 {Details of the final digital/analogue conversion following the digital delta-sigma modulation}
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H03M3/504 4 {the final digital/analogue converter being constituted by a finite impulse response [FIR] filter, i.e. FIRDAC}
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H03M3/506 4 {the final digital/analogue converter being constituted by a pulse width modulator}
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H03M3/508 3 {Details relating to the interpolation process}
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H03M3/51 3 {Automatic control for modifying converter range}
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H03M5/00 0 Conversion of the form of the representation of individual digits
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H03M5/02 1 Conversion to or from representation by pulses
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H03M5/04 2 the pulses having two levels
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H03M5/06 3 Code representation, e.g. transition, for a given bit cell depending only on the information in that bit cell
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H03M5/08 4 Code representation by pulse width
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H03M5/10 4 Code representation by pulse frequency
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H03M5/12 4 Biphase level code, e.g. split phase code, Manchester code; Biphase space or mark code, e.g. double frequency code
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H03M5/14 3 Code representation, e.g. transition, for a given bit cell depending on the information in one or more adjacent bit cells, e.g. delay modulation code, double density code
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H03M5/145 4 {Conversion to or from block codes or representations thereof}
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H03M5/16 2 the pulses having three levels
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H03M5/18 3 two levels being symmetrical with respect to the third level, i.e. balanced bipolar ternary code
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H03M5/20 2 the pulses having more than three levels
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H03M5/22 1 Conversion to or from representation by sinusoidal signals
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H03M7/00 0 Conversion of a code where information is represented by a given sequence or number of digits to a code where the same {, similar or subset of} information is represented by a different sequence or number of digits
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H03M7/001 1 {characterised by the elements used}
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H03M7/002 2 {using thin film devices}
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H03M7/003 2 {using superconductive devices}
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H03M7/004 2 {using magnetic elements, e.g. transfluxors}
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H03M7/005 2 {using semiconductor devices}
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H03M7/006 2 {using diodes}
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H03M7/007 2 {using resistive or capacitive elements}
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H03M7/008 2 {using opto-electronic devices}
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H03M7/02 1 Conversion to or from weighted codes, i.e. the weight given to a digit depending on the position of the digit within the block or code word
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H03M7/04 2 the radix thereof being two
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H03M7/06 2 the radix thereof being a positive integer different from two
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H03M7/08 3 the radix being ten, i.e. pure decimal code
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H03M7/10 2 the radix thereof being negative
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H03M7/12 2 having two radices, e.g. binary-coded-decimal code
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H03M7/14 1 Conversion to or from non-weighted codes
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H03M7/16 2 Conversion to or from unit-distance codes, e.g. Gray code, reflected binary code
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H03M7/165 3 {Conversion to or from thermometric code}
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H03M7/18 2 Conversion to or from residue codes
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H03M7/20 2 Conversion to or from n-out-of-m codes
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H03M7/22 3 to or from one-out-of-m codes
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H03M7/24 2 Conversion to or from floating-point codes
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H03M7/26 1 Conversion to or from stochastic codes
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H03M7/28 1 Programmable structures, i.e. where the code converter contains apparatus which is operator-changeable to modify the conversion process
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H03M7/30 1 Compression (speech analysis-synthesis for redundancy reduction G10L19/00; for image communication H04N); Expansion; Suppression of unnecessary data, e.g. redundancy reduction
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H03M7/3002 2 {Conversion to or from differential modulation}
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H03M7/3004 3 {Digital delta-sigma modulation}
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H03M7/3006 4 {Compensating for, or preventing of, undesired influence of physical parameters}
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H03M7/3008 5 {by averaging out the errors, e.g. using dither}
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H03M7/3011 5 {of non-linear distortion, e.g. by temporarily adapting the operation upon detection of instability conditions (avoiding instability by structural design H03M7/3035)}
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H03M7/3013 4 {Non-linear modulators}
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H03M7/3015 4 {Structural details of digital delta-sigma modulators}
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H03M7/3017 5 {Arrangements specific to bandpass modulators}
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H03M7/302 5 {characterised by the number of quantisers and their type and resolution}
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H03M7/3022 6 {having multiple quantisers arranged in cascaded loops, each of the second and further loops processing the quantisation error of the loop preceding it, i.e. multiple stage noise shaping [MASH] type}
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H03M7/3024 6 {having one quantiser only}
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H03M7/3026 7 {the quantiser being a multiple bit one}
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H03M7/3028 7 {the quantiser being a single bit one}
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H03M7/3031 5 {characterised by the order of the loop filter, e.g. having a first order loop filter in the feedforward path}
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H03M7/3033 6 {the modulator having a higher order loop filter in the feedforward path, e.g. with distributed feedforward inputs}
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H03M7/3035 7 {with provisions for rendering the modulator inherently stable, e.g. by restricting the swing within the loop, by removing part of the zeroes using local feedback loops, by positioning zeroes outside the unit circle causing the modulator to operate in a chaotic regime}
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H03M7/3037 7 {with weighted feedforward summation, i.e. with feedforward paths from more than one filter stage to the quantiser input}
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H03M7/304 7 {with distributed feedback, i.e. with feedback paths from the quantiser output to more than one filter stage}
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H03M7/3042 6 {the modulator being of the error feedback type, i.e. having loop filter stages in the feedback path only}
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H03M7/3044 3 {Conversion to or from differential modulation with several bits only, i.e. the difference between successive samples being coded by more than one bit, e.g. differential pulse code modulation [DPCM] (H03M7/3004 takes precedence; voice coding G10L19/00; image coding H04N19/00)}
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H03M7/3046 4 {adaptive, e.g. adaptive differential pulse code modulation [ADPCM]}
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H03M7/3048 3 {Conversion to or from one-bit differential modulation only, e.g. delta modulation [DM] (H03M7/3004 takes precedence)}
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H03M7/3051 4 {adaptive, e.g. adaptive delta modulation [ADM]}
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H03M7/3053 2 {Block-companding PCM systems}
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H03M7/3055 2 {Conversion to or from Modulo-PCM}
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H03M7/3057 2 {Distributed Source coding, e.g. Wyner-Ziv, Slepian Wolf}
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H03M7/3059 2 {Digital compression and data reduction techniques where the original information is represented by a subset or similar information, e.g. lossy compression}
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H03M7/3062 3 {Compressive sampling or sensing}
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H03M7/3064 3 {Segmenting}
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H03M7/3066 2 {by means of a mask or a bit-map}
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H03M7/3068 2 {Precoding preceding compression, e.g. Burrows-Wheeler transformation}
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H03M7/3071 3 {Prediction}
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H03M7/3073 4 {Time}
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H03M7/3075 4 {Space}
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H03M7/3077 3 {Sorting}
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H03M7/3079 3 {Context modeling}
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H03M7/3082 2 {Vector coding (for television signals, see H04N19/94)}
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H03M7/3084 2 {using adaptive string matching, e.g. the Lempel-Ziv method}
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H03M7/3086 3 {employing a sliding window, e.g. LZ77}
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H03M7/3088 3 {employing the use of a dictionary, e.g. LZ78}
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H03M7/3091 3 {Data deduplication}
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H03M7/3093 4 {using fixed length segments}
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H03M7/3095 4 {using variable length segments}
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H03M7/3097 3 {Grammar codes}
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H03M7/40 2 Conversion to or from variable length codes, e.g. Shannon-Fano code, Huffman code, Morse code
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H03M7/4006 3 {Conversion to or from arithmetic code}
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H03M7/4012 4 {Binary arithmetic codes}
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H03M7/4018 5 {Context adapative binary arithmetic codes [CABAC]}
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H03M7/4025 3 {constant length to or from Morse code conversion}
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H03M7/4031 3 {Fixed length to variable length coding}
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H03M7/4037 4 {Prefix coding}
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H03M7/4043 5 {Adaptive prefix coding}
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H03M7/405 6 {Tree adaptation}
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H03M7/4056 6 {Coding table selection}
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H03M7/4062 6 {Coding table adaptation}
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H03M7/4068 6 {Parameterized codes}
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H03M7/4075 7 {Golomb codes}
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H03M7/4081 5 {Static prefix coding}
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H03M7/4087 5 {Encoding of a tuple of symbols}
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H03M7/4093 3 {Variable length to variable length coding}
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H03M7/42 3 using table look-up for the coding or decoding process, e.g. using read-only memory {(H03M7/4006 takes precedence)}
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H03M7/425 4 {for the decoding process only}
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H03M7/46 2 Conversion to or from run-length codes, i.e. by representing the number of consecutive digits, or groups of digits, of the same kind by a code word and a digit indicative of that kind
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H03M7/48 3 alternating with other codes during the code conversion process, e.g. run-length coding being performed only as long as sufficientlylong runs of digits of the same kind are present
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H03M7/50 2 Conversion to or from non-linear codes, e.g. companding
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H03M7/55 2 {Compression Theory, e.g. compression of random number, repeated compression}
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H03M7/60 2 {General implementation details not specific to a particular type of compression}
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H03M7/6005 3 {Decoder aspects}
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H03M7/6011 3 {Encoder aspects}
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H03M7/6017 3 {Methods or arrangements to increase the throughput}
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H03M7/6023 4 {Parallelization}
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H03M7/6029 4 {Pipelining}
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H03M7/6035 3 {Handling of unkown probabilities}
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H03M7/6041 3 {Compression optimized for errors}
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H03M7/6047 3 {Power optimization with respect to the encoder, decoder, storage or transmission}
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H03M7/6052 3 {Synchronisation of encoder and decoder}
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H03M7/6058 3 {Saving memory space in the encoder or decoder}
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H03M7/6064 3 {Selection of Compressor}
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H03M7/607 4 {Selection between different types of compressors}
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H03M7/6076 4 {Selection between compressors of the same type}
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H03M7/6082 4 {Selection strategies}
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H03M7/6088 5 {according to the data type}
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H03M7/6094 5 {according to reasons other than compression rate or data type}
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H03M7/70 2 {Type of the data to be coded, other than image and sound}
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H03M7/702 3 {Software}
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H03M7/705 3 {Unicode}
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H03M7/707 3 {Structured documents, e.g. XML}
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H03M9/00 0 Parallel/series conversion or vice versa (digital stores in which the information is moved stepwise per se G11C19/00)
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H03M11/00 0 Coding in connection with keyboards or like devices, i.e. coding of the position of operated keys (keyboard switch arrangements, structural association of coders and keyboards H01H13/70, H03K17/94)
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H03M11/003 1 {Phantom keys detection and prevention}
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H03M11/006 1 {Measures for preventing unauthorised decoding of keyboards}
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H03M11/02 1 Details
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H03M11/04 2 Coding of multifunction keys
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H03M11/06 3 by operating the multifunction key itself in different ways
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H03M11/08 4 by operating selected combinations of multifunction keys
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H03M11/10 4 by methods based on duration or pressure detection of keystrokes
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H03M11/12 4 by operating a key a selected number of consecutive times whereafter a separate enter key is used which marks the end of the series
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H03M11/14 3 by using additional keys, e.g. shift keys, which determine the function performed by the multifunction key
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H03M11/16 4 wherein the shift keys are operated after the operation of the multifunction keys
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H03M11/18 4 wherein the shift keys are operated before the operation of the multifunction keys
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H03M11/20 1 Dynamic coding, i.e. by key scanning (H03M11/26 takes precedence)
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H03M11/22 1 Static coding (H03M11/26 takes precedence)
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H03M11/24 2 using analogue means {, e.g. by coding the states of multiple switches into a single multi-level analogue signal or by indicating the type of a device using the voltage level at a specific tap of a resistive divider}
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H03M11/26 1 using opto-electronic means
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H03M13/00 0 Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes (error detection or error correction for analogue/digital, digital/analogue or code conversion H03M1/00 – H03M11/00 specially adapted for digital computers G06F11/08, for information storage based on relative movement between record carrier and transducer G11B, e.g. G11B20/18, for static stores G11C)
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H03M13/01 1 Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
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H03M13/015 2 {Simulation or testing of codes, e.g. bit error rate [BER] measurements}
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H03M13/03 1 Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
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H03M13/033 2 {Theoretical methods to calculate these checking codes}
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H03M13/036 3 {Heuristic code construction methods, i.e. code construction or code search based on using trial-and-error}
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H03M13/05 2 using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits {(H03M13/2906 takes precedence)}
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H03M13/07 3 Arithmetic codes
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H03M13/09 3 Error detection only, e.g. using cyclic redundancy check [CRC] codes or single parity bit
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H03M13/091 4 {Parallel or block-wise CRC computation}
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H03M13/093 4 {CRC update after modification of the information word}
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H03M13/095 4 {Error detection codes other than CRC and single parity bit codes}
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H03M13/096 5 {Checksums}
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H03M13/098 4 {using single parity bit}
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H03M13/11 3 using multiple parity bits
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H03M13/1102 4 {Codes on graphs and decoding on graphs, e.g. low-density parity check [LDPC] codes}
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H03M13/1105 5 {Decoding}
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H03M13/1108 6 {Hard decision decoding, e.g. bit flipping, modified or weighted bit flipping}
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H03M13/1111 6 {Soft-decision decoding, e.g. by means of message passing or belief propagation algorithms}
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H03M13/1114 7 {Merged schedule message passing algorithm with storage of sums of check-to-bit node messages or sums of bit-to-check node messages, e.g. in order to increase the memory efficiency}
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H03M13/1117 7 {using approximations for check node processing, e.g. an outgoing message is depending on the signs and the minimum over the magnitudes of all incoming messages according to the min-sum rule}
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H03M13/112 8 {with correction functions for the min-sum rule, e.g. using an offset or a scaling factor}
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H03M13/1122 8 {storing only the first and second minimum values per check node}
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H03M13/1125 7 {using different domains for check node and bit node processing, wherein the different domains include probabilities, likelihood ratios, likelihood differences, log-likelihood ratios or log-likelihood difference pairs}
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H03M13/1128 6 {Judging correct decoding and iterative stopping criteria other than syndrome check and upper limit for decoding iterations}
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H03M13/1131 6 {Scheduling of bit node or check node processing}
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H03M13/1134 7 {Full parallel processing, i.e. all bit nodes or check nodes are processed in parallel}
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H03M13/1137 7 {Partly parallel processing, i.e. sub-blocks or sub-groups of nodes being processed in parallel}
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H03M13/114 7 {Shuffled, staggered, layered or turbo decoding schedules}
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H03M13/1142 6 {using trapping sets}
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H03M13/1145 6 {Pipelined decoding at code word level, e.g. multiple code words being decoded simultaneously}
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H03M13/1148 5 {Structural properties of the code parity-check or generator matrix}
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H03M13/1151 6 {Algebraically constructed LDPC codes, e.g. LDPC codes derived from Euclidean geometries [EG-LDPC codes] (H03M13/116, H03M13/1174 take precedence)}
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H03M13/1154 6 {Low-density parity-check convolutional codes [LDPC-CC]}
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H03M13/1157 6 {Low-density generator matrices [LDGM]}
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H03M13/116 6 {Quasi-cyclic LDPC [QC-LDPC] codes, i.e. the parity-check matrix being composed of permutation or circulant sub-matrices}
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H03M13/1162 7 {Array based LDPC codes, e.g. array codes}
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H03M13/1165 7 {QC-LDPC codes as defined for the digital video broadcasting [DVB] specifications, e.g. DVB-Satellite [DVB-S2]}
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H03M13/1168 7 {wherein the sub-matrices have column and row weights greater than one, e.g. multi-diagonal sub-matrices}
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H03M13/1171 6 {Parity-check or generator matrices with non-binary elements, e.g. for non-binary LDPC codes}
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H03M13/1174 6 {Parity-check or generator matrices built from sub-matrices representing known block codes such as, e.g. Hamming codes, e.g. generalized LDPC codes}
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H03M13/1177 6 {Regular LDPC codes with parity-check matrices wherein all rows and columns have the same row weight and column weight, respectively}
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H03M13/118 6 {Parity check matrix structured for simplifying encoding, e.g. by having a triangular or an approximate triangular structure (H03M13/1165 takes precedence)}
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H03M13/1182 7 {wherein the structure of the parity-check matrix is obtained by reordering of a random parity-check matrix}
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H03M13/1185 7 {wherein the parity-check matrix comprises a part with a double-diagonal}
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H03M13/1188 8 {wherein in the part with the double-diagonal at least one column has an odd column weight equal or greater than three}
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H03M13/1191 5 {Codes on graphs other than LDPC codes}
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H03M13/1194 6 {Repeat-accumulate [RA] codes}
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H03M13/1197 7 {Irregular repeat-accumulate [IRA] codes}
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H03M13/13 3 Linear codes
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H03M13/132 4 {Algebraic geometric codes, e.g. Goppa codes}
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H03M13/134 4 {Non-binary linear block codes not provided for otherwise}
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H03M13/136 4 {Reed-Muller [RM] codes}
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H03M13/138 4 {Codes linear in a ring, e.g. Z4-linear codes or Nordstrom-Robinson codes}
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H03M13/15 4 Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes (H03M13/17 takes precedence)
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H03M13/1505 5 {Golay Codes}
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H03M13/151 5 {using error location or error correction polynomials}
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H03M13/1515 6 {Reed-Solomon codes}
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H03M13/152 6 {Bose-Chaudhuri-Hocquenghem [BCH] codes}
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H03M13/1525 6 {Determination and particular use of error location polynomials}
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H03M13/153 7 {using the Berlekamp-Massey algorithm}
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H03M13/1535 7 {using the Euclid algorithm}
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H03M13/154 6 {Error and erasure correction, e.g. by using the error and erasure locator or Forney polynomial}
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H03M13/1545 6 {Determination of error locations, e.g. Chien search or other methods or arrangements for the determination of the roots of the error locator polynomial}
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H03M13/155 6 {Shortening or extension of codes}
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H03M13/1555 6 {Pipelined decoder implementations}
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H03M13/156 6 {Encoding or decoding using time-frequency transformations, e.g. fast Fourier transformation}
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H03M13/1565 6 {Decoding beyond the bounded minimum distance [BMD]}
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H03M13/157 6 {Polynomial evaluation, i.e. determination of a polynomial sum at a given value}
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H03M13/1575 6 {Direct decoding, e.g. by a direct determination of the error locator polynomial from syndromes and subsequent analysis or by matrix operations involving syndromes, e.g. for codes with a small minimum Hamming distance}
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H03M13/158 6 {Finite field arithmetic processing}
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H03M13/1585 6 {Determination of error values}
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H03M13/159 5 {Remainder calculation, e.g. for encoding and syndrome calculation}
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H03M13/1595 6 {Parallel or block-wise remainder calculation}
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H03M13/17 4 Burst error correction, e.g. error trapping, Fire codes
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H03M13/175 5 {Error trapping or Fire codes}
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H03M13/19 4 Single error correction without using particular properties of the cyclic codes, e.g. Hamming codes, extended or generalised Hamming codes
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H03M13/21 3 Non-linear codes, e.g. m-bit data word to n-bit code word [mBnB] conversion with error detection or error correction
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H03M13/23 2 using convolutional codes, e.g. unit memory codes
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H03M13/235 3 {Encoding of convolutional codes, e.g. methods or arrangements for parallel or block-wise encoding}
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H03M13/25 1 Error detection or forward error correction by signal space coding, i.e. adding redundancy in the signal constellation, e.g. Trellis Coded Modulation [TCM] {(modulation codes H03M13/31)}
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H03M13/251 2 {with block coding}
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H03M13/253 2 {with concatenated codes}
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H03M13/255 2 {with Low Density Parity Check [LDPC] codes}
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H03M13/256 2 {with trellis coding, e.g. with convolutional codes and TCM}
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H03M13/258 2 {with turbo codes, e.g. Turbo Trellis Coded Modulation [TTCM]}
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H03M13/27 1 using interleaving techniques
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H03M13/2703 2 {the interleaver involving at least two directions}
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H03M13/2707 3 {Simple row-column interleaver, i.e. pure block interleaving}
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H03M13/271 3 {Row-column interleaver with permutations, e.g. block interleaving with inter-row, inter-column, intra-row or intra-column permutations}
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H03M13/2714 4 {Turbo interleaver for 3rd generation partnership project [3GPP] universal mobile telecommunications systems [UMTS], e.g. as defined in technical specification TS 25.212}
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H03M13/2717 3 {the interleaver involves 3 or more directions}
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H03M13/2721 3 {the interleaver involves a diagonal direction, e.g. by using an interleaving matrix with read-out in a diagonal direction}
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H03M13/2725 3 {Turbo interleaver for 3rd generation partnership project 2 [3GPP2] mobile telecommunication systems, e.g. as defined in the 3GPP2 technical specifications C.S0002}
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H03M13/2728 3 {Helical type interleaver}
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H03M13/2732 2 {Convolutional interleaver; Interleavers using shift-registers or delay lines like, e.g. Ramsey type interleaver}
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H03M13/2735 2 {Interleaver using powers of a primitive element, e.g. Galois field [GF] interleaver}
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H03M13/2739 2 {Permutation polynomial interleaver, e.g. quadratic permutation polynomial [QPP] interleaver and quadratic congruence interleaver}
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H03M13/2742 2 {Irregular interleaver wherein the permutation pattern is not obtained by a computation rule, e.g. interleaver based on random generators}
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H03M13/2746 3 {S-random interleaver}
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H03M13/275 2 {Interleaver wherein the permutation pattern is obtained using a congruential operation of the type y=ax+b modulo c}
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H03M13/2753 3 {Almost regular permutation [ARP] interleaver}
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H03M13/2757 2 {Interleaver with an interleaving rule not provided for in the subgroups H03M13/2703 - H03M13/2753}
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H03M13/276 2 {Interleaving address generation}
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H03M13/2764 3 {Circuits therefore}
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H03M13/2767 2 {Interleaver wherein the permutation pattern or a portion thereof is stored}
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H03M13/2771 2 {Internal interleaver for turbo codes (H03M13/2714 and H03M13/2725 take precedence)}
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H03M13/2775 3 {Contention or collision free turbo code internal interleaver}
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H03M13/2778 2 {Interleaver using block-wise interleaving, e.g. the interleaving matrix is sub-divided into sub-matrices and the permutation is performed in blocks of sub-matrices}
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H03M13/2782 2 {Interleaver implementations, which reduce the amount of required interleaving memory}
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H03M13/2785 3 {Interleaver using in-place interleaving, i.e. writing to and reading from the memory is performed at the same memory location}
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H03M13/2789 2 {Interleaver providing variable interleaving, e.g. variable block sizes}
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H03M13/2792 2 {Interleaver wherein interleaving is performed jointly with another technique such as puncturing, multiplexing or routing}
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H03M13/2796 3 {Two or more interleaving operations are performed jointly, e.g. the first and second interleaving operations defined for 3GPP UMTS are performed jointly in a single interleaving operation}
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H03M13/29 1 combining two or more codes or code structures, e.g. product codes, generalised product codes, concatenated codes, inner and outer codes
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H03M13/2903 2 {Methods and arrangements specifically for encoding, e.g. parallel encoding of a plurality of constituent codes}
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H03M13/2906 2 {using block codes (H03M13/2957 takes precedence)}
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H03M13/2909 3 {Product codes}
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H03M13/2912 4 {omitting parity on parity}
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H03M13/2915 4 {with an error detection code in one dimension}
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H03M13/2918 3 {with error correction codes in three or more dimensions, e.g. 3-dimensional product code where the bits are arranged in a cube}
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H03M13/2921 3 {wherein error correction coding involves a diagonal direction}
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H03M13/2924 4 {Cross interleaved Reed-Solomon codes [CIRC]}
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H03M13/2927 3 {Decoding strategies}
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H03M13/293 4 {with erasure setting}
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H03M13/2933 2 {using a block and a convolutional code (H03M13/2957 takes precedence)}
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H03M13/2936 3 {comprising an outer Reed-Solomon code and an inner convolutional code}
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H03M13/2939 2 {using convolutional codes (H03M13/2957 takes precedence)}
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H03M13/2942 2 {wherein a block of parity bits is computed only from combined information bits or only from parity bits, e.g. a second block of parity bits is computed from a first block of parity bits obtained by systematic encoding of a block of information bits, or a block of parity bits is obtained by an XOR combination of sub-blocks of information bits}
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H03M13/2945 2 {using at least three error correction codes (H03M13/2957 takes precedence)}
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H03M13/2948 2 {Iterative decoding (H03M13/2957 takes precedence)}
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H03M13/2951 3 {using iteration stopping criteria}
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H03M13/2954 2 {using Picket codes or other codes providing error burst detection capabilities, e.g. burst indicator codes and long distance codes [LDC]}
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H03M13/2957 2 {Turbo codes and decoding}
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H03M13/296 3 {Particular turbo code structure}
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H03M13/2963 4 {Turbo-block codes, i.e. turbo codes based on block codes, e.g. turbo decoding of product codes}
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H03M13/2966 4 {Turbo codes concatenated with another code, e.g. an outer block code}
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H03M13/2969 4 {Non-binary turbo codes}
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H03M13/2972 4 {Serial concatenation using convolutional component codes}
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H03M13/2975 3 {Judging correct decoding, e.g. iteration stopping criteria}
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H03M13/2978 3 {Particular arrangement of the component decoders}
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H03M13/2981 4 {using as many component decoders as component codes}
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H03M13/2984 4 {using less component decoders than component codes, e.g. multiplexed decoders and scheduling thereof}
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H03M13/2987 4 {using more component decoders than component codes, e.g. pipelined turbo iterations}
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H03M13/299 3 {Turbo codes with short blocks}
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H03M13/2993 3 {Implementing the return to a predetermined state, i.e. trellis termination}
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H03M13/2996 3 {Tail biting}
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H03M13/31 1 combining coding for error detection or correction and efficient use of the spectrum (without error detection or correction H03M5/14 {, H03M5/145})
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H03M13/33 1 Synchronisation based on error coding or decoding
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H03M13/333 2 {Synchronisation on a multi-bit block basis, e.g. frame synchronisation}
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H03M13/336 2 {Phase recovery}
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H03M13/35 1 Unequal or adaptive error protection, e.g. by providing a different level of protection according to significance of source information or by adapting the coding according to the change of transmission channel characteristics
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H03M13/353 2 {Adaptation to the channel}
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H03M13/356 2 {Unequal error protection [UEP]}
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H03M13/37 1 Decoding methods or techniques, not specific to the particular type of coding provided for in groups H03M13/03 - H03M13/35
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H03M13/3707 2 {Adaptive decoding and hybrid decoding, e.g. decoding methods or techniques providing more than one decoding algorithm for one code}
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H03M13/3715 3 {Adaptation to the number of estimated errors or to the channel state}
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H03M13/3723 2 {using means or methods for the initialisation of the decoder}
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H03M13/373 2 {with erasure correction and erasure determination, e.g. for packet loss recovery or setting of erasures for the decoding of Reed-Solomon codes}
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H03M13/3738 2 {with judging correct decoding}
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H03M13/3746 2 {with iterative decoding}
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H03M13/3753 3 {using iteration stopping criteria}
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H03M13/3761 2 {using code combining, i.e. using combining of codeword portions which may have been transmitted separately, e.g. Digital Fountain codes, Raptor codes or Luby Transform [LT] codes}
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H03M13/3769 2 {using symbol combining, e.g. Chase combining of symbols received twice or more}
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H03M13/3776 2 {using a re-encoding step during the decoding process}
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H03M13/3784 2 {for soft-output decoding of block codes}
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H03M13/3792 2 {for decoding of real number codes}
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H03M13/39 2 Sequence estimation, i.e. using statistical methods for the reconstruction of the original codes
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H03M13/3905 3 {Maximum a posteriori probability [MAP] decoding or approximations thereof based on trellis or lattice decoding, e.g. forward-backward algorithm, log-MAP decoding, max-log-MAP decoding}
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H03M13/3911 4 {Correction factor, e.g. approximations of the exp(1+x) function}
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H03M13/3916 4 {for block codes using a trellis or lattice}
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H03M13/3922 4 {Add-Compare-Select [ACS] operation in forward or backward recursions}
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H03M13/3927 4 {Log-Likelihood Ratio [LLR] computation by combination of forward and backward metrics into LLRs}
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H03M13/3933 4 {Decoding in probability domain}
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H03M13/3938 4 {Tail-biting (H03M13/2996 takes precedence)}
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H03M13/3944 3 {for block codes, especially trellis or lattice decoding thereof}
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H03M13/395 3 {using a collapsed trellis, e.g. M-step algorithm, radix-n architectures with n>2}
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H03M13/3955 3 {using a trellis with a reduced state space complexity, e.g. M-algorithm or T-algorithm}
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H03M13/3961 3 {Arrangements of methods for branch or transition metric calculation}
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H03M13/3966 3 {based on architectures providing a highly parallelized implementation, e.g. based on systolic arrays}
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H03M13/3972 3 {using sliding window techniques or parallel windows}
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H03M13/3977 3 {using sequential decoding, e.g. the Fano or stack algorithms}
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H03M13/3983 3 {for non-binary convolutional codes}
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H03M13/3988 3 {for rate k/n convolutional codes, with k>1, obtained by convolutional encoders with k inputs and n outputs}
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H03M13/3994 3 {using state pinning or decision forcing, i.e. the decoded sequence is forced through a particular trellis state or a particular set of trellis states or a particular decoded symbol}
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H03M13/41 3 using the Viterbi algorithm or Viterbi processors
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H03M13/4107 4 {implementing add, compare, select [ACS] operations}
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H03M13/4115 4 {list output Viterbi decoding}
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H03M13/4123 4 {implementing the return to a predetermined state}
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H03M13/413 4 {tail biting Viterbi decoding}
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H03M13/4138 4 {soft-output Viterbi algorithm based decoding, i.e. Viterbi decoding with weighted decisions}
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H03M13/4146 5 {soft-output Viterbi decoding according to Battail and Hagenauer in which the soft-output is determined using path metric differences along the maximum-likelihood path, i.e. "SOVA" decoding}
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H03M13/4153 6 {two-step SOVA decoding, i.e. the soft-output is determined by a second traceback operation after the determination of the hard decision like in the Berrou decoder}
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H03M13/4161 4 {implementing path management}
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H03M13/4169 5 {using traceback (H03M13/4192 takes precedence)}
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H03M13/4176 6 {using a plurality of RAMs, e.g. for carrying out a plurality of traceback implementations simultaneously}
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H03M13/4184 5 {using register-exchange (H03M13/4192 takes precedence)}
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H03M13/4192 5 {using combined traceback and register-exchange}
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H03M13/43 2 Majority logic or threshold decoding
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H03M13/45 2 Soft decoding, i.e. using symbol reliability information (H03M13/41 takes precedence)
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H03M13/451 3 {using a set of candidate code words, e.g. ordered statistics decoding [OSD]}
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H03M13/453 4 {wherein the candidate code words are obtained by an algebraic decoder, e.g. Chase decoding}
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H03M13/455 5 {using a set of erasure patterns or successive erasure decoding, e.g. generalized minimum distance [GMD] decoding}
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H03M13/456 4 {wherein all the code words of the code or its dual code are tested, e.g. brute force decoding}
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H03M13/458 3 {by updating bit probabilities or hard decisions in an iterative fashion for convergence to a final decoding result}
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H03M13/47 1 Error detection, forward error correction or error protection, not provided for in groups H03M13/01 - H03M13/37
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H03M13/49 2 Unidirectional error detection or correction
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H03M13/51 2 Constant weight codes; n-out-of-m codes; Berger codes
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H03M13/53 2 Codes using Fibonacci numbers series
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H03M13/61 1 {Aspects and characteristics of methods and arrangements for error correction or error detection, not provided for otherwise}
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H03M13/611 2 {Specific encoding aspects, e.g. encoding by means of decoding}
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H03M13/612 2 {Aspects specific to channel or signal-to-noise ratio estimation (H03M13/63 takes precedence)}
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H03M13/613 2 {Use of the dual code}
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H03M13/615 2 {Use of computational or mathematical techniques}
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H03M13/616 3 {Matrix operations, especially for generator matrices or check matrices, e.g. column or row permutations}
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H03M13/617 3 {Polynomial operations, e.g. operations related to generator polynomials or parity-check polynomials}
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H03M13/618 2 {Shortening and extension of codes}
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H03M13/63 1 {Joint error correction and other techniques (H03M13/31 and H03M13/33 take precedence)}
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H03M13/6306 2 {Error control coding in combination with Automatic Repeat reQuest [ARQ] and diversity transmission, e.g. coding schemes for the multiple transmission of the same information or the transmission of incremental redundancy (H03M13/3761, H03M13/3769 and H03M13/635 take precedence)}
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H03M13/6312 2 {Error control coding in combination with data compression}
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H03M13/6318 3 {using variable length codes}
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H03M13/6325 2 {Error control coding in combination with demodulation}
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H03M13/6331 2 {Error control coding in combination with equalisation}
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H03M13/6337 2 {Error control coding in combination with channel estimation}
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H03M13/6343 2 {Error control coding in combination with techniques for partial response channels, e.g. recording}
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H03M13/635 2 {Error control coding in combination with rate matching}
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H03M13/6356 3 {by repetition or insertion of dummy data, i.e. rate reduction}
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H03M13/6362 3 {by puncturing}
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H03M13/6368 4 {using rate compatible puncturing or complementary puncturing}
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H03M13/6375 5 {Rate compatible punctured convolutional [RCPC] codes}
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H03M13/6381 5 {Rate compatible punctured turbo [RCPT] codes}
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H03M13/6387 5 {Complementary punctured convolutional [CPC] codes}
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H03M13/6393 5 {Rate compatible low-density parity check [LDPC] codes}
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H03M13/65 1 {Purpose and implementation aspects}
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H03M13/6502 2 {Reduction of hardware complexity or efficient processing}
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H03M13/6505 3 {Memory efficient implementations}
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H03M13/6508 2 {Flexibility, adaptability, parametrability and configurability of the implementation}
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H03M13/6511 3 {Support of multiple decoding rules, e.g. combined MAP and Viterbi decoding}
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H03M13/6513 3 {Support of multiple code types, e.g. unified decoder for LDPC and turbo codes}
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H03M13/6516 3 {Support of multiple code parameters, e.g. generalized Reed-Solomon decoder for a variety of generator polynomials or Galois fields}
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H03M13/6519 3 {Support of multiple transmission or communication standards}
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H03M13/6522 2 {Intended application, e.g. transmission or communication standard}
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H03M13/6525 3 {3GPP LTE including E-UTRA}
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H03M13/6527 3 {IEEE 802.11 [WLAN]}
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H03M13/653 3 {3GPP HSDPA, e.g. HS-SCCH or DS-DSCH related}
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H03M13/6533 3 {ITU 992.X [ADSL]}
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H03M13/6536 3 {GSM GPRS}
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H03M13/6538 3 {ATSC VBS systems}
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H03M13/6541 3 {DVB-H and DVB-M}
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H03M13/6544 3 {IEEE 802.16 (WIMAX and broadband wireless access)}
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H03M13/6547 3 {TCP, UDP, IP and associated protocols, e.g. RTP}
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H03M13/655 3 {UWB OFDM}
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H03M13/6552 3 {DVB-T2}
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H03M13/6555 3 {DVB-C2}
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H03M13/6558 3 {3GPP2}
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H03M13/6561 2 {Parallelized implementations}
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H03M13/6563 2 {Implementations using multi-port memories}
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H03M13/6566 2 {Implementations concerning memory access contentions}
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H03M13/6569 2 {Implementation on processors, e.g. DSPs, or software implementations}
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H03M13/6572 2 {Implementations using a tree structure, e.g. implementations in which the complexity is reduced by a tree structure from O(n) to O (log(n))}
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H03M13/6575 2 {Implementations based on combinatorial logic, e.g. Boolean circuits}
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H03M13/6577 2 {Representation or format of variables, register sizes or word-lengths and quantization}
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H03M13/658 3 {Scaling by multiplication or division}
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H03M13/6583 3 {Normalization other than scaling, e.g. by subtraction}
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H03M13/6586 4 {Modulo/modular normalization, e.g. 2's complement modulo implementations}
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H03M13/6588 3 {Compression or short representation of variables}
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H03M13/6591 3 {Truncation, saturation and clamping}
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H03M13/6594 3 {Non-linear quantization}
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H03M13/6597 2 {Implementations using analogue techniques for coding or decoding, e.g. analogue Viterbi decoder}
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H03M99/00 0 Subject matter not provided for in other groups of this subclass
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H04 ELECTRIC COMMUNICATION TECHNIQUE
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H04B TRANSMISSION
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H04B1/00 0 Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
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H04B1/0003 1 {Software-defined radio [SDR] systems, i.e. systems wherein components typically implemented in hardware, e.g. filters or modulators/demodulators, are implented using software, e.g. by involving an AD or DA conversion stage such that at least part of the signal processing is performed in the digital domain (digital baseband systems H04L25/00; digital modulation/demodulation H04L27/00; CDMA H04B1/707; TDMA H04B7/2643; image transmission H04N5/00)}
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H04B1/0007 2 {wherein the AD/DA conversion occurs at radiofrequency or intermediate frequency stage}
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H04B1/001 3 {Channel filtering, i.e. selecting a frequency channel within the SDR system (multiplexing of multicarrier modulation signals being represented by different frequencies H04L5/06; multiplexing of multicarrier modulation signals H04L5/023)}
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H04B1/0014 3 {using DSP [Digital Signal Processor] quadrature modulation and demodulation}
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H04B1/0017 3 {Digital filtering (H04B1/001 takes precedence; digital filters per se H03H17/00)}
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H04B1/0021 3 {Decimation, i.e. data rate reduction techniques (H04B1/0025 takes precedence)}
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H04B1/0025 3 {using a sampling rate lower than twice the highest frequency component of the sampled signal (for demodulation of angle-modulated signals H03D3/006)}
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H04B1/0028 2 {wherein the AD/DA conversion occurs at baseband stage}
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H04B1/0032 3 {with analogue quadrature frequency conversion to and from the baseband (quadrature modulators and demodulators per se H03D3/007, H03C3/40)}
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H04B1/0035 3 {Channel filtering, i.e. selecting a frequency channel within a software radio system (multiplexing of multicarrier modulation signals being represented by different frequencies H04L5/06; multiplexing of multicarrier modulation signals H04L5/023)}
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H04B1/0039 3 {using DSP [Digital Signal Processor] quadrature modulation and demodulation}
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H04B1/0042 3 {Digital filtering (H04B1/0035 takes precedence; digital filters per se H03H17/00)}
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H04B1/0046 3 {Decimation, i.e. data rate reduction techniques}
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H04B1/005 1 {adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges}
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H04B1/0053 2 {with common antenna for more than one band}
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H04B1/0057 3 {using diplexing or multiplexing filters for selecting the desired band}
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H04B1/006 3 {using switches for selecting the desired band (H04B1/0057 takes precedence)}
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H04B1/0064 2 {with separate antennas for the more than one band (H04B1/0053 takes precedence)}
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H04B1/0067 2 {with one or more circuit blocks in common for different bands}
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H04B1/0071 3 {using a common intermediate frequency for more than one band (H04B1/0075 takes precedence)}
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H04B1/0075 3 {using different intermediate frequencied for the different bands}
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H04B1/0078 4 {with a common intermediate frequency amplifier for the different intermediate frequencies, e.g. when using switched intermediate frequency filters}
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H04B1/0082 3 {with a common local oscillator for more than one band}
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H04B1/0085 4 {where one band is the image frequency band of the other and the band selection is done by image rejection}
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H04B1/0089 4 {using a first intermediate frequency higher that the highest of any band received}
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H04B1/0092 5 {using a wideband front end}
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H04B1/0096 2 {where a full band is frequency converted into another full band}
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H04B1/02 1 Transmitters
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H04B1/03 2 Constructional details, e.g. casings, housings
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H04B1/034 3 Portable transmitters
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H04B1/0343 4 {to be carried on the body}
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H04B1/0346 4 {Hand-held transmitters}
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H04B1/036 3 Cooling arrangements
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H04B1/04 2 Circuits
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H04B2001/0408 3 {with power amplifiers}
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H04B2001/0416 4 {having gain or transmission power control}
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H04B2001/0425 4 {with linearisation using predistortion}
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H04B2001/0433 4 {with linearisation using feedback}
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H04B2001/0441 4 {with linearisation using feed-forward}
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H04B2001/045 4 {with means for improving efficiency}
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H04B1/0458 3 {Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H)}
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H04B1/0466 3 {Fault detection or indication (H04B1/0483 takes precedence)}
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H04B1/0475 3 {with means for limiting noise, interference or distortion (H04B1/0483 takes precedence)}
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H04B1/0483 3 {Transmitters with multiple parallel paths}
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H04B2001/0491 3 {with frequency synthesizers, frequency converters or modulators}
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H04B1/06 1 Receivers
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H04B1/08 2 Constructional details, e.g. cabinet
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H04B1/082 3 {to be used in vehicles (H04B1/086 takes precedence; holding or mounting accessories B60R11/02)}
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H04B2001/084 4 {with removable front panel}
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H04B1/086 3 {Portable receivers}
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H04B1/088 4 {with parts of the receiver detachable or collapsible}
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H04B1/10 2 Means associated with receiver for limiting or suppressing noise or interference
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H04B1/1009 3 {Placing the antenna at a place where the noise level is low and using a noise-free transmission line between the antenna and the receivers (screened aerials H01Q7/04; feeders for aerials H01Q9/00)}
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H04B1/1018 3 {noise filters connected between the power supply and the receiver (suppression or limitation of noise from electric apparatus H04B15/00; demodulation H03D; ripple filters H02M1/14; filters in general 95G, H03H; power supplies H04B1/1607)}
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H04B1/1027 3 {assessing signal quality or detecting noise/interference for the received signal}
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H04B1/1036 4 {with automatic suppression of narrow band noise or interference, e.g. by using tuneable notch filters (H04B1/123 takes precedence; filter circuits H03H)}
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H04B2001/1045 4 {Adjacent-channel interference}
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H04B2001/1054 4 {by changing bandwidth}
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H04B2001/1063 4 {using a notch filter}
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H04B2001/1072 4 {by tuning the receiver frequency}
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H04B1/1081 3 {Reduction of multipath noise (by equalising H04B7/005)}
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H04B1/109 3 {by improving strong signal performance of the receiver when strong unwanted signals are present at the receiver input}
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H04B1/12 3 Neutralising, balancing, or compensation arrangements
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H04B1/123 4 {using adaptive balancing or compensation means (adaptive filter circuits and algorithms H03H)}
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H04B1/126 5 {having multiple inputs, e.g. auxiliary antenna for receiving interfering signal (aerials in general H01Q)}
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H04B1/14 3 Automatic detuning arrangements
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H04B1/16 2 Circuits
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H04B1/1607 3 {Supply circuits (converters H02M; filters therefor H02M1/14; voltage stabilisers G05F1/46)}
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H04B1/1615 4 {Switching on; Switching off, e.g. remotely (battery saving circuits associated with selective call operation H04W52/00; details of power consumption reduction in a PLL, H03L7/0802, H03L7/14, H03L2207/08, H03L2207/18; muting amplifiers by gain control see H03G3/34)}
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H04B1/1623 4 {using tubes}
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H04B1/163 3 {Special arrangements for the reduction of the damping of resonant circuits of receivers (amplifiers H03F; negative impedance networks for line transmission systems H04B3/16)}
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H04B1/1638 3 {Special circuits to enhance selectivity of receivers not otherwise provided for (resonant circuits H03H)}
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H04B1/1646 3 {adapted for the reception of stereophonic signals}
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H04B1/1653 4 {Detection of the presence of stereo signals and pilot signal regeneration}
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H04B1/1661 4 {Reduction of noise by manipulation of the baseband composite stereophonic signal or the decoded left and right channels}
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H04B1/1669 5 {of the demodulated composite stereo signal}
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H04B1/1676 6 {of the sum or difference signal}
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H04B1/1684 6 {of the decoded left or right stereo channel}
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H04B1/1692 4 {using companding of the stereo difference signal, e.g. FMX (volume compression or expansion in amplifiers H03G7/00)}
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H04B1/18 3 Input circuits, e.g. for coupling to an antenna or a transmission line (coupling networks between antennas or lines and receivers independent of the nature of the receiver H03H)
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H04B1/20 3 for coupling gramophone pick-up, recorder output, or microphone to receiver
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H04B1/202 4 {by remote control}
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H04B1/205 4 {with control bus for exchanging commands between units}
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H04B1/207 4 {with an audio or audio/video bus for signal distribution (H04B1/205 takes precedence)}
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H04B1/22 3 for receivers in which no local oscillation is generated
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H04B1/24 4 the receiver comprising at least one semiconductor device having three or more electrodes
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H04B1/26 3 for superheterodyne receivers (multiple frequency-changing H03D7/16)
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H04B1/28 4 the receiver comprising at least one semiconductor device having three or more electrodes
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H04B1/30 3 for homodyne or synchrodyne receivers (demodulator circuits H03D1/22)
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H04B1/302 4 {for single sideband receivers (demodulator circuits H03D1/24)}
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H04B2001/305 4 {using dc offset compensation techniques}
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H04B2001/307 4 {using n-port mixer}
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H04B1/38 1 Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
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H04B1/3805 2 with built-in auxiliary receivers
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H04B2001/3811 3 {Split configuration of transmission devices}
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H04B1/3816 2 Mechanical arrangements for accommodating identification devices, e.g. cards or chips; with connectors for programming identification devices
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H04B1/3818 3 Arrangements for facilitating insertion or removal of identification devices
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H04B1/3822 2 specially adapted for use in vehicles (H04B1/3827 takes precedence)
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H04B1/3827 2 Portable transceivers
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H04B1/3833 3 {Hand-held transceivers}
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H04B1/3838 4 {Arrangements for reducing RF exposure to the user, e.g. by changing the shape of the transceiver while in use}
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H04B2001/3844 5 {with means to alert the user that a certain exposure has been reached}
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H04B1/385 3 {Transceivers carried on the body, e.g. in helmets}
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H04B2001/3855 4 {carried in a belt or harness}
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H04B2001/3861 4 {carried in a hand or on fingers}
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H04B2001/3866 4 {carried on the head}
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H04B2001/3872 4 {with extendable microphones or earphones}
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H04B1/3877 3 Arrangements for enabling portable transceivers to be used in a fixed position, e.g. cradles or boosters
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H04B1/3883 3 Arrangements for mounting batteries or battery chargers
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H04B1/3888 3 Arrangements for carrying or protecting transceivers
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H04B2001/3894 2 {Waterproofing of transmission device}
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H04B1/40 2 Circuits
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H04B1/401 3 for selecting or indicating operating mode
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H04B1/403 3 using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
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H04B1/405 4 with multiple discrete channels
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H04B1/406 4 {with more than one transmission mode, e.g. analog and digital modes}
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H04B1/408 4 the transmitter oscillator frequency being identical to the receiver local oscillator frequency
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H04B1/44 3 Transmit/receive switching
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H04B1/46 4 by voice-frequency signals; by pilot signals
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H04B1/48 4 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter {(H04B1/46 takes precedence)}
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H04B2001/485 5 {inhibiting unwanted transmission}
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H04B1/50 3 using different frequencies for the two directions of communication
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H04B1/52 4 Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
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H04B1/525 5 with means for reducing leakage of transmitter signal into the receiver
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H04B1/54 3 using the same frequency for two directions of communication (H04B1/44 takes precedence)
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H04B1/56 4 with provision for simultaneous communication in two directions
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H04B1/58 4 Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
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H04B1/581 5 {using a transformer}
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H04B1/582 6 {with automatic balancing}
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H04B1/583 5 {using a bridge network}
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H04B1/585 6 {with automatic balancing}
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H04B1/586 5 {using an electronic circuit}
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H04B1/587 5 {using opto-couplers (light transmission systems H04B10/00)}
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H04B1/588 5 {using sampling gates}
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H04B1/59 1 Responders; Transponders
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H04B1/60 1 Supervising unattended repeaters
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H04B1/62 1 for providing a predistortion of the signal in the transmitter and corresponding correction in the receiver, e.g. for improving the signal/noise ratio
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H04B1/64 2 Volume compression or expansion arrangements
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H04B1/66 1 for reducing bandwidth of signals; for improving efficiency of transmission (H04B1/68 takes precedence)
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H04B1/662 2 {using a time/frequency relationship, e.g. time compression or expansion}
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H04B1/665 2 {using psychoacoustic properties of the ear, e.g. masking effect}
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H04B1/667 2 {using a division in frequency subbands (for TV signals H04N19/63)}
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H04B1/68 1 for wholly or partially suppressing the carrier or one side band
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H04B1/69 1 Spread spectrum techniques
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H04B2001/6904 2 {using code hopping}
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H04B2001/6908 2 {using time hopping}
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H04B2001/6912 2 {using chirp}
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H04B2001/6916 2 {Related theory}
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H04B1/692 2 Hybrid techniques using combinations of two or more spread spectrum techniques
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H04B1/707 2 using direct sequence modulation
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H04B2001/70706 3 {using a code tracking loop, e.g. a delay locked loop}
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H04B1/70712 3 {with demodulation by means of convolvers, e.g. of the SAW type (SAW convolvers in general G06G7/195)}
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H04B1/70718 3 {with asynchronous demodulation, i.e. not requiring code synchronisation}
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H04B2001/70724 3 {featuring pilot assisted reception}
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H04B1/7073 3 Synchronisation aspects
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H04B1/70735 4 {Code identification (H04B1/7083 takes precedence)}
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H04B1/7075 4 with code phase acquisition
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H04B1/70751 5 {using partial detection (H04B1/70758 takes precedence)}
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H04B1/70752 6 {Partial correlation}
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H04B1/70753 6 {Partial phase search}
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H04B1/70754 5 {Setting of search window, i.e. range of code offsets to be searched (H04B1/70758 takes precedence)}
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H04B1/70755 5 {Setting of lock conditions, e.g. threshold}
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H04B1/70756 5 {Jumping within the code, i.e. masking or slewing (H04B1/70758 takes precedence)}
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H04B1/70757 5 {with increased resolution, i.e. higher than half a chip (H04B1/70758 takes precedence)}
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H04B1/70758 5 {Multimode search, i.e. using multiple search strategies}
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H04B1/7077 5 Multi-step acquisition, e.g. multi-dwell, coarse-fine or validation
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H04B1/70775 6 {Multi-dwell schemes, i.e. multiple accumulation times}
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H04B1/708 5 Parallel implementation
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H04B1/7083 4 Cell search, e.g. using a three-step approach
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H04B1/7085 4 using a code tracking loop, e.g. a delay-locked loop
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H04B2001/70855 5 {Dithering}
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H04B1/7087 4 Carrier synchronisation aspects
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H04B1/709 3 Correlator structure
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H04B1/7093 4 Matched filter type
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H04B2001/70935 5 {using a bank of matched fileters, e.g. Fast Hadamard Transform}
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H04B1/7095 4 Sliding correlator type
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H04B1/7097 3 Interference-related aspects
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H04B1/71 4 the interference being narrowband interference
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H04B1/7101 5 {with estimation filters}
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H04B1/7102 5 {with transform to frequency domain}
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H04B1/7103 4 the interference being multiple access interference
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H04B1/7105 5 Joint detection techniques, e.g. linear detectors
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H04B1/71052 6 {using decorrelation matrix}
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H04B1/71055 6 {using minimum mean squared error [MMSE] detector}
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H04B1/71057 6 {using maximum-likelihood sequence estimation [MLSE]}
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H04B1/7107 5 Subtractive interference cancellation
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H04B1/71072 6 {Successive interference cancellation}
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H04B1/71075 6 {Parallel interference cancellation}
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H04B2001/71077 6 {Partial interference cancellation}
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H04B1/711 4 the interference being multi-path interference
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H04B1/7113 5 Determination of path profile
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H04B1/7115 5 Constructive combining of multi-path signals, i.e. RAKE receivers
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H04B1/7117 6 Selection, re-selection, allocation or re-allocation of paths to fingers, e.g. timing offset control of allocated fingers
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H04B1/712 6 Weighting of fingers for combining, e.g. amplitude control or phase rotation using an inner loop
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H04B1/713 2 using frequency hopping
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H04B1/7136 3 Arrangements for generation of hop frequencies, e.g. using a bank of frequency sources, using continuous tuning or using a transform
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H04B2001/71362 4 {using a bank of frequency sources}
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H04B2001/71365 4 {using continuous tuning of a single frequency source}
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H04B2001/71367 4 {using a transform}
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H04B1/7143 3 Arrangements for generation of hop patterns
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H04B1/715 3 Interference-related aspects
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H04B2001/7152 4 {with means for suppressing interference}
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H04B2001/7154 4 {with means for preventing interference}
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H04B1/7156 3 Arrangements for sequence synchronisation
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H04B2001/71563 4 {Acquisition}
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H04B2001/71566 4 {Tracking}
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H04B1/7163 2 using impulse radio
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H04B1/71632 3 {Signal aspects (H04B1/7172 and H04B1/7176 take precedence)}
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H04B1/71635 3 {Transmitter aspects (H04B1/7174 takes precedence)}
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H04B1/71637 3 {Receiver aspects (H04B1/7183 takes precedence)}
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H04B1/717 3 Pulse-related aspects
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H04B1/7172 4 {Pulse shape (in general H04L25/03834)}
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H04B1/7174 4 {Pulse generation (in general H04L25/03834)}
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H04B1/7176 3 Data mapping, e.g. modulation
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H04B1/7183 3 Synchronisation
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H04B1/719 3 Interference-related aspects
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H04B1/72 1 Circuits or components for simulating antennas, e.g. dummy antennas
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H04B1/74 1 for increasing reliability, e.g. using redundant or spare channels or apparatus {(replacing by standby devices for amplifiers H03F1/52, H03F1/542)}
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H04B1/745 2 {using by-passing or self-healing methods}
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H04B1/76 1 Pilot transmitters or receivers for control of transmission or for equalising
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H04B3/00 0 Line transmission systems (combined with near-field transmission systems H04B5/00)
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H04B3/02 1 Details
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H04B3/03 2 Hybrid circuits (for transceivers H04B1/52, H04B1/58)
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H04B3/04 2 Control of transmission; Equalising
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H04B3/06 3 by the transmitted signal
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H04B3/08 4 in negative-feedback path of line amplifier
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H04B3/10 3 by pilot signal
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H04B3/11 4 using pilot wire (H04B3/12 takes precedence)
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H04B3/12 4 in negative-feedback path of line amplifier
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H04B3/14 3 characterised by the equalising network used
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H04B3/141 4 {using multiequalisers, e.g. bump, cosine, Bode}
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H04B3/142 4 {using echo-equalisers, e.g. transversal}
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H04B3/143 4 {using amplitude-frequency equalisers}
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H04B3/144 5 {fixed equalizers}
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H04B3/145 5 {variable equalisers}
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H04B3/146 4 {using phase-frequency equalisers}
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H04B3/147 5 {fixed equalisers}
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H04B3/148 5 {variable equalisers}
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H04B3/16 3 characterised by the negative-impedance network used
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H04B3/18 4 wherein the network comprises semiconductor devices
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H04B3/20 2 Reducing echo effects or singing; Opening or closing transmitting path; Conditioning for transmission in one direction or the other
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H04B3/21 3 using a set of bandfilters
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H04B3/23 3 using a replica of transmitted signal in the time domain, e.g. echo cancellers
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H04B3/231 4 {Echo cancellers using readout of a memory to provide the echo replica}
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H04B3/232 4 {using phase shift, phase roll or frequency offset correction}
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H04B3/234 4 {using double talk detection}
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H04B3/235 4 {combined with adaptive equaliser}
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H04B3/237 4 {using two adaptive filters, e.g. for near end and for end echo cancelling}
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H04B3/238 4 {using initial training sequence}
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H04B3/26 2 Improving frequency characteristic by the use of loading coils
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H04B3/28 2 Reducing interference caused by currents induced in cable sheathing or armouring
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H04B3/30 2 Reducing interference caused by unbalance current in a normally balanced line
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H04B3/32 2 Reducing cross-talk, e.g. by compensating
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H04B3/34 3 by systematic interconnection of lengths of cable during laying; by addition of balancing components to cable during laying
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H04B3/36 2 Repeater circuits (H04B3/58 takes precedence)
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H04B3/38 3 for signals in two different frequency ranges transmitted in opposite directions over the same transmission path
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H04B3/40 2 Artificial lines; Networks simulating a line of certain length
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H04B3/42 2 Circuits for by-passing of ringing signals
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H04B3/44 2 Arrangements for feeding power to a repeater along the transmission line
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H04B3/46 2 Monitoring; Testing
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H04B3/462 3 Testing group delay or phase shift, e.g. timing jitter
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H04B3/466 4 Testing attenuation in combination with at least one of group delay and phase shift
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H04B3/48 3 Testing attenuation (H04B3/466 takes precedence)
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H04B3/487 3 Testing crosstalk effects
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H04B3/493 3 Testing echo effects or singing
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H04B3/50 1 Systems for transmission between fixed stations via two-conductor transmission lines (H04B3/54 takes precedence)
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H04B3/52 1 Systems for transmission between fixed stations via waveguides
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H04B3/54 1 Systems for transmission via power distribution lines
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H04B3/542 2 {the information being in digital form}
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H04B3/544 2 {Setting up communications; Call and signalling arrangements}
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H04B3/546 2 {Combination of signalling, telemetering, protection (circuits for remote indication of supply or distribution network condition H02J13/00)}
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H04B3/548 2 {the power on the line being DC (arrangements for feeding power H04L12/10; extracting feeding power from signals H04L25/02)}
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H04B3/56 2 Circuits for coupling, blocking, or by-passing of signals
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H04B3/58 2 Repeater circuits
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H04B3/60 1 Systems for communication between relatively movable stations, e.g. for communication with lift (H04B3/54 takes precedence)
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H04B5/00 0 Near-field transmission systems, e.g. inductive loop type
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H04B5/0006 1 {using a receiver structurally associated with a loudspeaker or an earphone}
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H04B5/0012 1 {using capacitive coupling}
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H04B5/0018 1 {using leaky or radiating cables, e.g. leaky coaxial cables or power lines for inductive transmission (leaky cables per se H01Q13/20; for railways B61L3/22)}
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H04B5/0025 1 {Near field system adaptations}
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H04B5/0031 2 {for data transfer}
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H04B5/0037 2 {for power transfer}
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H04B5/0043 2 {for taking measurements, e.g. using sensor coils}
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H04B5/005 2 {for isolation purposes}
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H04B5/0056 1 {for use in interrogation, identification or read/write systems (record carriers G06K7/00, G06K19/00; for railways B61L3/12)}
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H04B5/0062 2 {in RFID [Radio Frequency Identification] Systems}
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H04B5/0068 2 {in transponders}
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H04B5/0075 1 {using inductive coupling (transformers or inductances adapted for inductive coupling H01F38/14)}
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H04B5/0081 2 {with antenna coils (loop aerials H01Q7/00)}
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H04B5/0087 2 {with multiple coils at either side}
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H04B5/0093 2 {with one coil at each side, e.g. with primary and secondary coils}
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H04B5/02 1 using transceiver
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H04B5/04 1 Calling systems, e.g. paging system
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H04B5/06 1 using a portable transmitter associated with a microphone
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H04B7/00 0 Radio transmission systems, i.e. using radiation field (H04B10/00, H04B15/00 take precedence)
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H04B7/002 1 {Reducing depolarization effects}
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H04B7/005 1 Control of transmission; Equalising
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H04B7/01 1 Reducing phase shift
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H04B7/015 1 Reducing echo effects
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H04B7/02 1 Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas (RAKE receivers H04B1/7115)
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H04B7/022 2 Site diversity; Macro-diversity (using two or more spaced independent antennas H04B7/04)
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H04B7/024 3 Co-operative use of antennas of several sites, e.g. in co-ordinated multipoint or co-operative multiple-input multiple-output [MIMO] systems
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H04B7/026 3 Co-operative diversity, e.g. using fixed or mobile stations as relays
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H04B7/028 2 {Spatial transmit diversity using a single antenna at the transmitter}
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H04B7/04 2 using two or more spaced independent antennas
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H04B7/0404 3 the mobile station comprising multiple antennas, e.g. to provide uplink diversity
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H04B7/0408 3 using two or more beams, i.e. beam diversity
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H04B7/0413 3 MIMO systems
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H04B7/0417 4 Feedback systems
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H04B7/0421 5 {utilizing implicit feedback, e.g. steered pilot signals}
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H04B7/0426 4 Power distribution
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H04B7/043 5 {using best eigenmode, e.g. beam forming or beam steering}
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H04B7/0434 5 {using multiple eigenmodes}
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H04B7/0439 6 {utilizing channel inversion}
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H04B7/0443 6 {utilizing "waterfilling" technique}
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H04B7/0447 6 {utilizing uniform distribution}
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H04B7/0452 4 Multi-user MIMO systems
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H04B7/0456 4 Selection of precoding matrices or codebooks, e.g. using matrices antenna weighting
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H04B7/046 5 {taking physical layer constraints into account}
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H04B7/0465 6 {taking power constraints at power amplifier or emission constraints, e.g. constant modulus, into account}
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H04B7/0469 6 {taking special antenna structures, e.g. cross polarized antennas into account}
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H04B7/0473 6 {taking constraints in layer or codeword to antenna mapping into account}
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H04B7/0478 5 {Special codebook structures directed to feedback optimization}
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H04B7/0482 5 {Adaptive codebooks}
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H04B7/0486 5 {taking channel rank into account}
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H04B7/0491 3 using two or more sectors, i.e. sector diversity
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H04B7/0495 4 using overlapping sectors in the same base station to implement MIMO for antennas
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H04B7/06 3 at the transmitting station
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H04B7/0602 4 {using antenna switching (H04B7/0686 takes precedence; antenna beam directivity switching H01Q3/24)}
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H04B7/0604 5 {with predefined switching scheme}
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H04B7/0606 6 {Random or pseudo-random switching scheme}
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H04B7/0608 5 {Antenna selection according to transmission parameters}
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H04B7/061 6 {using feedback from receiving side}
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H04B7/0613 4 {using simultaneous transmission (H04B7/0686 takes precedence)}
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H04B7/0615 5 {of weighted versions of same signal}
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H04B7/0617 6 {for beam forming}
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H04B7/0619 6 {using feedback from receiving side (feedback signaling for adaptive modulation/coding H04L1/0001)}
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H04B7/0621 7 {Feedback content}
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H04B7/0623 8 {Auxiliary parameters, e.g. power control [PCB] or not acknowledged commands [NACK], used as feedback information}
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H04B7/0626 8 {Channel coefficients, e.g. channel state information [CSI]}
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H04B7/0628 8 {Diversity capabilities}
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H04B7/063 8 {Parameters other than those covered in groups H04B7/0623 - H04B7/0634, e.g. channel matrix rank or transmit mode selection}
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H04B7/0632 8 {Channel quality parameters, e.g. channel quality indicator [CQI]}
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H04B7/0634 8 {Antenna weights or vector/matrix coefficients}
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H04B7/0636 7 {Feedback format}
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H04B7/0639 8 {Using selective indices, e.g. of a codebook, e.g. pre-distortion matrix index [PMI] or for beam selection}
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H04B7/0641 8 {Differential feedback}
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H04B7/0643 8 {Feedback on request}
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H04B7/0645 8 {Variable feedback}
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H04B7/0647 9 {Variable feedback rate}
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H04B7/065 9 {Variable contents, e.g. long-term or short-short}
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H04B7/0652 7 {Feedback error handling}
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H04B7/0654 8 {at the receiver, e.g. antenna verification at mobile station}
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H04B7/0656 8 {at the transmitter, e.g. error detection at base station}
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H04B7/0658 7 {Feedback reduction}
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H04B7/066 8 {Combined feedback for a number of channels, e.g. over several subcarriers like in orthogonal frequency division multiplexing [OFDM]}
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H04B7/0663 8 {using vector or matrix manipulations}
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H04B7/0665 6 {Feed forward of transmit weights to the receiver}
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H04B7/0667 5 {of delayed versions of same signal (using space-time coding H04L1/0618)}
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H04B7/0669 6 {using different channel coding between antennas (space-time coding H04L1/0618)}
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H04B7/0671 6 {using different delays between antennas}
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H04B7/0673 6 {using feedback from receiving side}
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H04B7/0676 6 {using random or pseudo-random delays}
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H04B7/0678 5 {using different spreading codes between antennas (code allocation H04J13/16)}
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H04B7/068 5 {using space frequency diversity (space-frequency coding H04L1/0606)}
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H04B7/0682 5 {using phase diversity (e.g. phase sweeping)}
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H04B7/0684 5 {using different training sequences per antenna}
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H04B7/0686 4 {Hybrid systems, i.e. switching and simultaneous transmission}
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H04B7/0689 5 {using different transmission schemes, at least one of them being a diversity transmission scheme}
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H04B7/0691 5 {using subgroups of transmit antennas}
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H04B7/0693 6 {switching off a diversity branch, e.g. to save power}
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H04B7/0695 5 {using beam selection}
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H04B7/0697 4 {using spatial multiplexing}
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H04B7/08 3 at the receiving station
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H04B7/0802 4 {using antenna selection (H04B7/0868 takes precedence; antenna beam directivity switching H01Q3/24)}
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H04B7/0805 5 {with single receiver and antenna switching (H04B7/0822 takes precedence)}
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H04B7/0808 6 {comparing all antennas before reception}
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H04B7/0811 7 {during preamble or gap period}
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H04B7/0814 6 {based on current reception conditions, e.g. switching to different antenna when signal level is below threshold}
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H04B7/0817 5 {with multiple receivers and antenna path selection}
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H04B7/082 6 {selecting best antenna path}
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H04B7/0822 5 {according to predefined selection scheme}
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H04B7/0825 5 {with main and with auxiliary or diversity antennas}
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H04B7/0828 5 {with delay elements in antenna paths}
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H04B7/0831 5 {Compensation of the diversity switching process for non-uniform properties or faulty operations of the switches used in the diversity switching process}
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H04B7/0834 5 {based on external parameters, e.g. subscriber speed or location}
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H04B7/0837 4 {using pre-detection combining (H04B7/0868 takes precedence)}
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H04B7/084 5 {Equal gain combining, only phase adjustments (antenna beam scanning or forming by phase or amplitude control H01Q3/26, e.g. phased arrays)}
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H04B7/0842 5 {Weighted combining}
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H04B7/0845 6 {per branch equalization, e.g. by an FIR-filter or RAKE receiver per antenna branch (rake receivers as such H04B1/7115)}
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H04B7/0848 6 {Joint weighting}
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H04B7/0851 7 {using training sequences or error signal (minimizing error signal H04B7/0854)}
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H04B7/0854 7 {using error minimizing algorithms, e.g. minimum mean squared error [MMSE], "cross-correlation" or matrix inversion}
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H04B7/0857 7 {using maximum ratio combining techniques, e.g. signal-to- interference ratio [SIR], received signal strenght indication [RSS]}
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H04B7/086 6 {using weights depending on external parameters, e.g. direction of arrival [DOA], predetermined weights or beamforming}
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H04B7/0862 6 {receiver computing weights based on information from the transmitter}
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H04B7/0865 6 {Independent weighting, i.e. weights based on own antenna reception parameters}
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H04B7/0868 4 {Hybrid systems, i.e. switching and combining}
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H04B7/0871 5 {using different reception schemes, at least one of them being a diversity reception scheme}
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H04B7/0874 5 {using subgroups of receive antennas}
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H04B7/0877 6 {switching off a diversity branch, e.g. to save power}
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H04B7/088 5 {using beam selection}
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H04B7/0882 4 {using post-detection diversity}
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H04B7/0885 5 {with combination}
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H04B7/0888 5 {with selection}
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H04B7/0891 4 {Space-time diversity (rake receivers H04B1/7115; space-time decoding H04L1/0631)}
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H04B7/0894 5 {using different delays between antennas}
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H04B7/0897 5 {using beamforming per multi-path, e.g. to cope with different directions of arrival [DOA] at different multi-paths}
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H04B7/10 2 Polarisation diversity; Directional diversity
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H04B7/12 2 Frequency diversity
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H04B7/14 1 Relay systems
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H04B7/145 2 Passive relay systems
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H04B7/15 2 Active relay systems
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H04B7/155 3 Ground-based stations (H04B7/204 takes precedence)
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H04B7/15507 4 {Relay station based processing for cell extension or control of coverage area, (network planning with network coordinated processing with regard to cell extension H04W16/26; network topologies using dedicated repeater stations H04W84/047; terminal devices adapted for relaying to or from an other terminal H04W88/04)}
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H04B7/15514 5 {for shadowing compensation (for satellite mobile telephony service systems H04B7/18536)}
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H04B7/15521 4 {combining by calculations packets received from different stations before transmitting the combined packets as part of network coding (network coding aspects for detection or prevention of errors in the information received H04L1/0076; network traffic management with optimizing of information sizing, e.g. header compression, by using assembly and disassembly of packets H04W28/065)}
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H04B7/15528 4 {Control of operation parameters of a relay station to exploit the physical medium}
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H04B7/15535 5 {Control of relay amplifier gain (amplifier gain control in general H03G3/00; gain control reducing self - or loop interference H04B7/15578)}
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H04B7/15542 5 {Selecting at relay station its transmit and receive resources (selection of wireless resources by user or terminal H04W72/02; arrangements affording multiple use of the transmission path by two-dimensional division of the resources H04L5/0003, or by allocating sub-channels H04L5/003)}
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H04B7/1555 5 {Selecting relay station antenna mode, e.g. selecting omnidirectional -, directional beams, selecting polarizations}
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H04B7/15557 4 {Selecting relay station operation mode, e.g. between amplify and forward mode, decode and forward mode or FDD - and TDD mode}
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H04B7/15564 4 {Relay station antennae loop interference reduction}
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H04B7/15571 5 {by signal isolation, e.g. isolation by frequency or by antenna pattern, or by polarization}
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H04B7/15578 5 {by gain adjustment}
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H04B7/15585 5 {by interference cancellation}
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H04B7/15592 4 {Adapting at the relay station communication parameters for supporting cooperative relaying, i.e. transmission of the same data via direct - and relayed path (cooperative diversity H04B7/024)}
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H04B7/165 4 employing angle modulation
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H04B7/17 4 employing pulse modulation, e.g. pulse code modulation
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H04B7/185 3 Space-based or airborne stations; {Stations for satellite systems}(H04B7/204 takes precedence)
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H04B7/18502 4 {Airborne stations}
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H04B7/18504 5 {Aircraft used as relay or high altitude atmospheric platform}
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H04B7/18506 5 {Communications with or from aircraft, i.e. aeronautical mobile service}
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H04B7/18508 6 {with satellite system used as relay, i.e. aeronautical mobile satellite service}
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H04B7/1851 4 {Systems using a satellite or space-based relay (H04B7/18508, H04B7/18521 take precedence; providing specific services H04B7/18523 - H04B7/18576)}
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H04B7/18513 5 {Transmission in a satellite or space-based system}
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H04B7/18515 5 {Transmission equipment in satellites or space-based relays}
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H04B7/18517 5 {Transmission equipment in earth stations}
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H04B7/18519 5 {Operations control, administration or maintenance}
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H04B7/18521 4 {Systems of inter linked satellites, i.e. inter satellite service (for optical links between satellites H04B10/118)}
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H04B7/18523 4 {Satellite systems for providing broadcast service to terrestrial stations, i.e. broadcast satellite service (arrangements specially adapted for satellite broadcast receiving H04H40/90; picture transmission via satellite H04N1/00103; television transmission via satellite H04N7/20)}
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H04B7/18526 5 {Arrangements for data linking, networking or transporting, or for controlling an end to end session (data switching networks H04L12/00)}
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H04B7/18528 4 {Satellite systems for providing two-way communications service to a network of fixed stations, i.e. fixed satellite service or very small aperture terminal [VSAT] system}
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H04B7/1853 4 {Satellite systems for providing telephony service to a mobile station, i.e. mobile satellite service (for selecting H04W)}
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H04B7/18532 5 {Arrangements for managing transmission, i.e. for transporting data or a signalling message}
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H04B7/18534 6 {for enhancing link reliablility, e.g. satellites diversity}
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H04B7/18536 6 {Shadowing compensation therefor, e.g. by using an additional terrestrial relay}
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H04B7/18539 5 {Arrangements for managing radio, resources, i.e. for establishing or releasing a connection}
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H04B7/18541 6 {for handover of resources}
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H04B7/18543 6 {for adaptation of transmission parameters, e.g. power control (for detecting or preventing errors in the information received H04L1/00)}
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H04B7/18545 5 {Arrangements for managing station mobility, i.e. for station registration or localisation}
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H04B7/18547 6 {for geolocalisation of a station (position fixing by direction or distance determination G01S5/00)}
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H04B7/1855 7 {using a telephonic control signal, e.g. propagation delay variation, Doppler frequency variation, power variation, beam identification}
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H04B7/18552 8 {using a telephonic control signal and a second ranging satellite (determining absolute distances from a plurality of spaced points of known location G01S5/14)}
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H04B7/18554 7 {using the position provided by an existing geolocalisation system}
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H04B7/18556 6 {using a location database}
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H04B7/18558 5 {Arrangements for managing communications, i.e. for setting up, maintaining or releasing a call between stations}
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H04B7/1856 6 {for call routing}
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H04B7/18563 5 {Arrangements for interconnecting multiple systems (data switching networks H04L12/00)}
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H04B7/18565 5 {Arrangements for preventing unauthorised access or for providing user protection (arrangements for secret or secure communication H04L9/00)}
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H04B7/18567 5 {Arrangements for providing additional services to the basic mobile satellite telephony service}
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H04B7/18569 5 {Arrangements for system physical machines management, i.e. for construction operations control, administration, maintenance}
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H04B7/18571 6 {for satellites; for fixed or mobile stations}
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H04B7/18573 6 {for operations control, administration or maintenance}
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H04B7/18576 4 {Satellite systems for providing narrowband data service to fixed or mobile stations, e.g. using a minisatellite, a microsatellite (for selecting H04W)}
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H04B7/18578 4 {Satellite systems for providing broadband data service to individual earth stations (for selecting H04W; provisions for broadband connection, H04Q11/0478)}
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H04B7/1858 5 {Arrangements for data transmission on the physical system, i.e. for data bit transmission between network components}
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H04B7/18582 5 {Arrangements for data linking, i.e. for data framing, for error recovery, for multiple access}
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H04B7/18584 5 {Arrangements for data networking, i.e. for data packet routing, for congestion control (data switching networks H04L12/00)}
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H04B7/18586 5 {Arrangements for data transporting, e.g. for an end to end data transport or check}
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H04B7/18589 5 {Arrangements for controlling an end to end session, i.e. for initialising, synchronising or terminating an end to end link}
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H04B7/18591 5 {Arrangements for interconnecting multiple systems (data switching networks H04L12/00)}
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H04B7/18593 5 {Arrangements for preventing unauthorised access or for providing user protection (arrangements for secret or secure communication H04L9/00)}
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H04B7/18595 5 {Arrangements for adapting broadband applications to satellite systems}
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H04B7/18597 5 {Arrangements for system physical machines management, i.e. for construction, operations control, administration, maintenance}
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H04B7/19 4 Earth-synchronous stations
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H04B7/195 4 Non-synchronous stations
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H04B7/204 3 Multiple access
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H04B7/2041 4 {Spot beam multiple access}
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H04B7/2043 4 {Mixed mode, TDM and FDM systems}
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H04B7/2045 4 {SS-FDMA, FDMA satellite switching}
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H04B7/2046 4 {SS-TDMA, TDMA satellite switching}
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H04B7/2048 5 {Frame structure, synchronisation or frame acquisition in SS-TDMA systems}
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H04B7/208 4 Frequency-division multiple access {[FDMA]}
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H04B7/212 4 Time-division multiple access {[TDMA]}
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H04B7/2121 5 {Channels assignment to the different stations}
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H04B7/2123 6 {Variable assignment, e.g. demand assignment}
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H04B7/2125 5 {Synchronisation}
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H04B7/2126 6 {using a reference station}
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H04B7/2128 7 {Changing of the reference station}
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H04B7/216 4 Code division or spread-spectrum multiple access {[CDMA, SSMA]}
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H04B7/22 1 Scatter propagation systems {, e.g. ionospheric, tropospheric or meteor scatter}
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H04B7/24 1 for communication between two or more posts (wireless communication networks H04W)
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H04B7/26 2 at least one of which is mobile
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H04B7/2603 3 {Arrangements for wireless physical layer control (H04B7/2612 takes precedence)}
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H04B7/2606 4 {Arrangements for base station coverage control, e.g. by using relays in tunnels}
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H04B7/2609 4 {Arrangements for range control, e.g. by using remote antennas}
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H04B7/2612 3 {Arrangements for wireless medium access control, e.g. by allocating physical layer transmission capacity (H04B7/2615 - H04B7/2643 take precedence; provision for broadband connection H04Q11/0478)}
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H04B7/2615 3 {using hybrid frequency-time division multiple access [FDMA-TDMA]}
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H04B7/2618 3 {using hybrid code-time division multiple access [CDMA-TDMA]}
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H04B7/2621 3 {using frequency division multiple access [FDMA] (H04B7/2615 takes precedence)}
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H04B7/2625 3 {using common wave}
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H04B7/2628 3 {using code-division multiple access [CDMA] or spread spectrum multiple access [SSMA] (H04B7/2618 takes precedence)}
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H04B7/2631 4 {for broadband transmission}
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H04B7/2634 4 {for channel frequency control}
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H04B7/2637 4 {for logical channel control}
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H04B7/264 4 {for data rate control}
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H04B7/2643 3 {using time-division multiple access [TDMA] (H04B7/2615, H04B7/2618 take precedence)}
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H04B7/2646 4 {for broadband transmission}
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H04B7/265 4 {for channel frequency control}
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H04B7/2653 4 {for logical channel control}
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H04B7/2656 4 {for structure of frame, burst}
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H04B7/2659 4 {for data rate control}
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H04B7/2662 3 {Arrangements for Wireless System Synchronisation}
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H04B7/2665 4 {Arrangements for Wireless Frequency Division Multiple Access [FDMA] System Synchronisation}
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H04B7/2668 4 {Arrangements for Wireless Code-Division Multiple Access [CDMA] System Synchronisation, (for code acquisition H04B1/7075, for code tracking H04B1/7085)}
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H04B7/2671 4 {Arrangements for Wireless Time-Division Multiple Access [TDMA] System Synchronisation}
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H04B7/2675 5 {Frequency synchronisation}
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H04B7/2678 5 {Time synchronisation}
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H04B7/2681 6 {Synchronisation of a mobile station with one base station}
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H04B7/2684 6 {Synchronisation of a mobile station with more than one base station}
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H04B7/2687 6 {Inter base stations synchronisation}
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H04B7/269 7 {Master/slave synchronisation}
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H04B7/2693 7 {Centralised synchronisation, i.e. using external universal time reference, e.g. by using a global positioning system [GPS] or by distributing time reference over the wireline network}
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H04B7/2696 7 {Over the air autonomous synchronisation, e.g. by monitoring network activity (H04B7/2693 takes precedence)}
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H04B10/00 0 Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
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H04B10/03 1 Arrangements for fault recovery
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H04B10/032 2 using working and protection systems {(H04J14/0287 takes precedence)}
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H04B10/035 2 using loopbacks
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H04B10/038 2 using bypasses
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H04B10/07 1 Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
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H04B10/071 2 using a reflected signal, e.g. using optical time domain reflectometers [OTDR]
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H04B10/073 2 using an out-of-service signal (H04B10/071 takes precedence)
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H04B10/0731 3 {Testing or characterisation of optical devices, e.g. amplifiers}
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H04B10/075 2 using an in-service signal (H04B10/071 takes precedence)
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H04B10/077 3 using a supervisory or additional signal
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H04B10/0771 4 {Fault location on the transmission path}
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H04B10/0773 4 {Network aspects, e.g. central monitoring of transmission parameters}
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H04B10/0775 4 {Performance monitoring and measurement of transmission parameters}
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H04B10/0777 4 {Monitoring line amplifier or line repeater equipment}
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H04B10/0779 4 {Monitoring line transmitter or line receiver equipment}
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H04B10/079 3 using measurements of the data signal
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H04B10/0791 4 {Fault location on the transmission path}
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H04B10/0793 4 {Network aspects, e.g. central monitoring of transmission parameters}
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H04B10/0795 4 {Performance monitoring; Measurement of transmission parameters}
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H04B10/07951 5 {Monitoring or measuring chromatic dispersion or PMD}
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H04B10/07953 5 {Monitoring or measuring OSNR, BER or Q}
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H04B10/07955 5 {Monitoring or measuring power}
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H04B10/07957 5 {Monitoring or measuring wavelength}
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H04B10/0797 4 {Monitoring line amplifier or line repeater equipment}
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H04B10/0799 4 {Monitoring line transmitter or line receiver equipment}
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H04B10/11 1 Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
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H04B10/112 2 Line-of-sight transmission over an extended range
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H04B10/1121 3 {One-way transmission}
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H04B10/1123 3 {Bidirectional transmission}
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H04B10/1125 4 {using a single common optical path}
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H04B10/1127 4 {using two distinct parallel optical paths}
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H04B10/1129 3 {Arrangements for outdoor wireless networking of information}
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H04B10/114 2 Indoor or close-range type systems
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H04B10/1141 3 {One-way transmission}
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H04B10/1143 3 {Bidirectional transmission}
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H04B10/1149 3 {Arrangements for indoor wireless networking of information}
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H04B10/116 3 Visible light communication
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H04B10/118 2 specially adapted for satellite communication
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H04B10/25 1 Arrangements specific to fibre transmission
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H04B10/2507 2 for the reduction or elimination of distortion or dispersion
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H04B10/25073 3 {using spectral equalisation, e.g. spectral filtering}
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H04B10/25077 3 {using soliton propagation}
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H04B10/2513 3 due to chromatic dispersion
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H04B10/25133 4 {including a lumped electrical or optical dispersion compensator (H04B10/2519, H04B10/2525 takes precedence)}
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H04B10/25137 4 {using pulse shaping at the transmitter, e.g. pre-chirping or dispersion supported transmission [DST]}
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H04B10/2519 4 using Bragg gratings
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H04B10/2525 4 using dispersion-compensating fibres
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H04B10/25253 5 {with dispersion management, i.e. using a combination of different kind of fibres in the transmission system}
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H04B10/2531 4 using spectral inversion
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H04B10/2537 3 due to scattering processes, e.g. Raman or Brillouin scattering
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H04B10/2543 3 due to fibre non-linearities, e.g. Kerr effect
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H04B10/255 4 Self-phase modulation [SPM]
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H04B10/2557 4 Cross-phase modulation [XPM]
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H04B10/2563 4 Four-wave mixing [FWM]
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H04B10/2569 3 due to polarisation mode dispersion [PMD]
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H04B10/2572 3 {due to forms of polarisation-dependent distortion other than PMD}
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H04B10/2575 2 Radio-over-fibre, e.g. radio frequency signal modulated onto an optical carrier
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H04B10/25751 3 {Optical arrangements for CATV or video distribution (adaptations of television systems for optical transmission H04N7/22)}
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H04B10/25752 3 {Optical arrangements for wireless networks}
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H04B10/25753 4 {Distribution optical network, e.g. between a base station and a plurality of remote units}
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H04B10/25754 5 {Star network topology}
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H04B10/25755 5 {Ring network topology}
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H04B10/25756 5 {Bus network topology}
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H04B10/25758 4 {between a central unit and a single remote unit by means of an optical fibre}
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H04B10/25759 5 {Details of the reception of RF signal or the optical conversion before the optical fibre}
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H04B10/2581 2 Multimode transmission
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H04B10/2587 2 using a single light source for multiple stations
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H04B10/2589 2 {Bidirectional transmission}
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H04B10/25891 3 {Transmission components (H04B10/40 takes precedence)}
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H04B10/27 1 Arrangements for networking
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H04B10/271 2 {Combination of different networks, e.g. star and ring configuration in the same network or two ring networks interconnected}
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H04B10/272 2 Star-type networks {or tree-type networks}
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H04B10/2725 3 {Star-type networks without a headend}
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H04B10/275 2 Ring-type networks
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H04B10/2755 3 {Ring-type networks with a headend}
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H04B10/278 2 Bus-type networks
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H04B10/29 1 Repeaters
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H04B10/291 2 in which processing or amplification is carried out without conversion of the main signal from optical form
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H04B10/2912 3 {characterised by the medium used for amplification or processing}
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H04B10/2914 4 {using lumped semiconductor optical amplifiers [SOA]}
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H04B10/2916 4 {using Raman or Brillouin amplifiers}
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H04B10/293 3 Signal power control
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H04B10/2931 4 {using AGC (H04B10/294 takes precedence)}
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H04B10/2933 4 {considering the whole optical path}
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H04B10/2935 5 {with a cascade of amplifiers}
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H04B10/2937 5 {Systems with a repeater placed only at the beginning or the end of the system, i.e. repeaterless systems, e.g. systems with only post and pre-amplification}
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H04B10/2939 5 {Network aspects}
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H04B10/294 4 in a multiwavelength system, e.g. gain equalisation
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H04B10/2941 5 {using an equalising unit, e.g. a filter (H04B10/296 takes precedence)}
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H04B10/2942 5 {using automatic gain control [AGC] (H04B10/296 takes precedence)}
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H04B10/296 5 Transient power control, e.g. due to channel add/drop or rapid fluctuations in the input power
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H04B10/297 3 Bidirectional amplification
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H04B10/2971 4 {A single amplifier for both directions}
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H04B10/2972 4 {Each direction being amplified separately}
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H04B10/298 3 {Two-way repeaters, i.e. repeaters amplifying separate upward and downward lines}
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H04B10/299 3 Signal waveform processing, e.g. reshaping or retiming
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H04B10/40 1 Transceivers
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H04B10/43 2 using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
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H04B10/50 1 Transmitters
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H04B10/501 2 {Structural aspects}
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H04B10/502 3 {LED transmitters}
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H04B10/503 3 {Laser transmitters}
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H04B10/504 4 {using direct modulation}
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H04B10/505 4 {using external modulation}
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H04B10/5051 5 {using a series, i.e. cascade, combination of modulators}
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H04B10/5053 5 {using a parallel, i.e. shunt, combination of modulators}
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H04B10/5055 5 {using a pre-coder}
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H04B10/5057 5 {using a feedback signal generated by analysing the optical output}
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H04B10/50572 6 {to control the modulating signal amplitude including amplitude distortion}
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H04B10/50575 6 {to control the modulator DC bias}
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H04B10/50577 6 {to control the phase of the modulating signal}
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H04B10/5059 5 {using a feed-forward signal generated by analysing the optical or electrical input}
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H04B10/50593 6 {to control the modulating signal amplitude including amplitude distortion}
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H04B10/50595 6 {to control the modulator DC bias}
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H04B10/50597 6 {to control the phase of the modulating signal}
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H04B10/506 3 {Multiwavelength transmitters}
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H04B10/508 2 Pulse generation, e.g. generation of solitons
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H04B10/516 2 Details of coding or modulation
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H04B10/5161 3 {Combination of different modulation schemes}
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H04B10/5162 3 {Return-to-zero modulation schemes}
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H04B10/5165 3 {Carrier suppressed; Single sideband; Double sideband or vestigial}
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H04B10/5167 3 {Duo-binary; Alternative mark inversion; Phase shaped binary transmission}
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H04B10/524 3 Pulse modulation
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H04B10/532 3 Polarisation modulation
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H04B10/54 3 Intensity modulation
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H04B10/541 4 {Digital intensity or amplitude modulation}
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H04B10/548 3 Phase or frequency modulation
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H04B10/556 4 Digital modulation, e.g. differential phase shift keying [DPSK] or frequency shift keying [FSK]
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H04B10/5561 5 {Digital phase modulation}
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H04B10/5563 5 {Digital frequency modulation}
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H04B10/564 2 Power control
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H04B10/572 2 Wavelength control
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H04B10/58 2 Compensation for non-linear transmitter output
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H04B10/588 3 in external modulation systems
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H04B10/60 1 Receivers
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H04B10/61 2 Coherent receivers
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H04B10/612 3 {for optical signals modulated with a format different from binary or higher-order PSK [X-PSK], e.g. QAM, DPSK, FSK, MSK, ASK}
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H04B10/613 3 {including phase diversity, e.g., having in-phase and quadrature branches, as in QPSK coherent receivers}
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H04B10/614 3 {comprising one or more polarization beam splitters, e.g. polarization multiplexed [PolMux] X-PSK coherent receivers, polarization diversity heterodyne coherent receivers (H04J14/06 takes precedence)}
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H04B10/615 3 {Arrangements affecting the optical part of the receiver}
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H04B10/6151 4 {comprising a polarization controller at the receiver's input stage}
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H04B10/616 3 {Details of the electronic signal processing in coherent optical receivers}
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H04B10/6161 4 {Compensation of chromatic dispersion}
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H04B10/6162 4 {Compensation of polarization related effects, e.g., PMD, PDL}
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H04B10/6163 4 {Compensation of non-linear effects in the fiber optic link, e.g. self-phase modulation [SPM], cross-phase modulation [XPM], four wave mixing [FWM]}
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H04B10/6164 4 {Estimation or correction of the frequency offset between the received optical signal and the optical local oscillator}
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H04B10/6165 4 {Estimation of the phase of the received optical signal, phase error estimation or phase error correction}
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H04B10/6166 4 {Polarisation demultiplexing, tracking or alignment of orthogonal polarisation components}
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H04B10/63 3 Homodyne {, i.e. coherent receivers where the local oscillator is locked in frequency and phase to the carrier signal}
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H04B10/64 3 Heterodyne {, i.e. coherent receivers where, after the opto-electronic conversion, an electrical signal at an intermediate frequency [fIF] is obtained}
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H04B10/65 3 {Intradyne, i.e. coherent receivers with a free running local oscillator having a frequency close but not phase-locked to the carrier signal}
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H04B10/66 2 Non-coherent receivers, e.g. using direct detection
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H04B10/67 3 Optical arrangements in the receiver
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H04B10/671 4 {for controlling the input optical signal}
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H04B10/672 5 {for controlling the power of the input optical signal}
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H04B10/673 6 {using an optical preamplifier}
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H04B10/674 6 {using a variable optical attenuator}
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H04B10/675 5 {for controlling the optical bandwidth of the input signal, e.g. spectral filtering}
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H04B10/676 4 {for all-optical demodulation of the input optical signal}
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H04B10/677 5 {for differentially modulated signal, e.g. DPSK signals}
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H04B10/69 3 Electrical arrangements in the receiver
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H04B10/691 4 {Arrangements for optimizing the photodetector in the receiver}
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H04B10/6911 5 {Photodiode bias control, e.g. for compensating temperature variations}
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H04B10/693 4 {Arrangements for optimizing the preamplifier in the receiver}
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H04B10/6931 5 {Automatic gain control of the preamplifier}
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H04B10/6932 5 {Bandwidth control of bit rate adaptation}
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H04B10/6933 5 {Offset control of the differential preamplifier}
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H04B10/695 4 {Arrangements for optimizing the decision element in the receiver, e.g. by using automatic threshold control}
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H04B10/697 4 {Arrangements for reducing noise and distortion}
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H04B10/6971 5 {using equalisation}
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H04B10/6972 5 {using passive filtering}
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H04B10/6973 5 {using noise matching networks}
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H04B10/70 1 Photonic quantum communication
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H04B10/80 1 Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
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H04B10/801 2 {using optical interconnects, e.g. light coupled isolators, circuit board interconnections}
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H04B10/802 3 {for isolation, e.g. using optocouplers}
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H04B10/803 3 {Free space interconnects, e.g. between circuit boards or chips}
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H04B10/806 2 {Arrangements for feeding power}
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H04B10/807 3 {Optical power feeding, i.e. transmitting power using an optical signal}
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H04B10/808 3 {Electrical power feeding of an optical transmission system}
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H04B10/85 2 Protection from unauthorised access, e.g. eavesdrop protection
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H04B10/90 1 Non-optical transmission systems, e.g. transmission systems employing non-photonic corpuscular radiation
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H04B11/00 0 Transmission systems employing sonic, ultrasonic or infrasonic waves
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H04B13/00 0 Transmission systems characterised by the medium used for transmission, not provided for in groups H04B3/00 - H04B11/00
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H04B13/005 1 {Transmission systems in which the medium consists of the human body}
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H04B13/02 1 Transmission systems in which the medium consists of the earth or a large mass of water thereon, e.g. earth telegraphy
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H04B14/00 0 Transmission systems not characterised by the medium used for transmission (details thereof H04B1/00)
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H04B14/002 1 {characterised by the use of a carrier modulation (using subcarrier modulation H04B14/08)}
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H04B14/004 2 {Amplitude modulation}
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H04B14/006 2 {Angle modulation}
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H04B14/008 2 {Polarisation modulation}
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H04B14/02 1 characterised by the use of pulse modulation (in radio transmission relays H04B7/17)
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H04B14/023 2 {using pulse amplitude modulation}
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H04B14/026 2 {using pulse time characteristics modulation, e.g. width, position, interval}
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H04B14/04 2 using pulse code modulation
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H04B14/042 3 {Special circuits, e.g. comparators}
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H04B14/044 3 {Sample and hold circuits (in general G11C27/02)}
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H04B14/046 3 {Systems or methods for reducing noise or bandwidth}
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H04B14/048 4 {Non linear compression or expansion}
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H04B14/06 2 using differential modulation, e.g. delta modulation
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H04B14/062 3 {using delta modulation or one-bit differential modulation [1DPCM]}
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H04B14/064 4 {with adaptive feedback}
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H04B14/066 3 {using differential modulation with several bits [NDPCM]}
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H04B14/068 4 {with adaptive feedback}
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H04B14/08 1 characterised by the use of a sub-carrier
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H04B15/00 0 Suppression or limitation of noise or interference (by means associated with receiver H04B1/10)
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H04B15/005 1 {Reducing noise, e.g. humm, from the supply}
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H04B15/02 1 Reducing interference from electric apparatus by means located at or near the interfering apparatus
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H04B15/025 2 {Reducing interference from ignition apparatus of fuel engines (cables with high resistance H01B)}
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H04B15/04 2 the interference being caused by substantially sinusoidal oscillations, e.g. in a receiver or in a tape-recorder
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H04B15/06 3 by local oscillators of receivers
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H04B17/00 0 Monitoring; Testing (of line transmission systems H04B3/46; arrangements for monitoring or testing transmission systems employing electromagnetic waves other than radio waves H04B10/07)
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H04B17/0082 1 {using service channels; using auxiliary channels}
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H04B17/0085 2 {using test signal generators}
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H04B17/0087 2 {using auxiliary channels or channel simulators}
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H04B17/10 1 of transmitters
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H04B17/101 2 {for measurement of parameters}
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H04B17/102 3 {of radiated power at antenna port}
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H04B17/103 3 {of reflected power, e.g. return loss}
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H04B17/104 3 {of other parameters, e.g. DC offset, delay or propagation times}
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H04B17/11 2 for calibration
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H04B17/12 3 of transmit antennas, e.g. of the amplitude or phase
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H04B17/13 3 of power amplifiers, e.g. gain or non-linearity
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H04B17/14 3 of the whole transmission and reception path, e.g. self-test loop-back
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H04B17/15 2 Performance testing
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H04B17/16 3 Test equipment located at the transmitter
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H04B17/17 3 Detection of non-compliance or faulty performance, e.g. response deviations (H04B17/18 takes precedence)
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H04B17/18 3 Monitoring during normal operation
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H04B17/19 3 Self-testing arrangements
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H04B17/20 1 of receivers
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H04B17/21 2 for calibration; for correcting measurements
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H04B17/23 2 Indication means, e.g. displays, alarms, audible means
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H04B17/24 2 with feedback of measurements to the transmitter
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H04B17/26 2 using historical data, averaging values or statistics
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H04B17/27 2 for locating or positioning the transmitter
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H04B17/29 2 Performance testing
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H04B17/30 1 of propagation channels
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H04B17/309 2 Measuring or estimating channel quality parameters
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H04B17/318 3 Received signal strength
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H04B17/327 4 Received signal code power [RSCP]
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H04B17/336 3 Signal-to-interference ratio [SIR] or carrier-to-interference ratio [CIR]
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H04B17/345 3 Interference values (H04B17/336 takes precedence)
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H04B17/354 3 Adjacent channel leakage power
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H04B17/364 3 Delay profiles
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H04B17/373 2 Predicting channel quality parameters
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H04B17/382 2 for resource allocation, admission control or handover
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H04B17/391 2 Modelling the propagation channel
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H04B17/3911 3 {Fading models or fading generators}
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H04B17/3912 3 {Simulation models}
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H04B17/3913 3 {Predictive models}
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H04B17/40 1 of relay systems
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H04B17/401 2 {with selective localization}
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H04B17/402 3 {using different frequencies}
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H04B17/403 4 {generated by local oscillators}
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H04B17/404 4 {selected by local filters}
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H04B17/405 4 {generated by local multipliers, dividers, modulators}
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H04B17/406 3 {using coded addresses}
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H04B17/407 2 {without selective localization}
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H04B17/408 3 {using successive loop-backs}
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H04B17/409 3 {by means of resistance, voltage or current measurement}
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H04B2201/00 0 Indexing scheme relating to details of transmission systems not covered by a single group of H04B3/00 - H04B13/00
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H04B2201/69 1 Orthogonal indexing scheme relating to spread spectrum techniques in general
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H04B2201/692 2 Cognitive radio
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H04B2201/694 2 WPAN
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H04B2201/696 2 relating to Dowlink
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H04B2201/698 2 relating to Uplink
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H04B2201/707 2 relating to direct sequence modulation
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H04B2201/70701 3 featuring pilot assisted reception
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H04B2201/70702 3 Intercell-related aspects
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H04B2201/70703 3 using multiple or variable rates
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H04B2201/70705 4 Rate detection
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H04B2201/70706 3 with means for reducing the peak-to-average power ratio
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H04B2201/70707 3 Efficiency-related aspects
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H04B2201/70709 4 with discontinuous detection
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H04B2201/7071 4 with dynamic control of receiver resources
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H04B2201/70711 5 with modular structure
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H04B2201/70713 4 Reducing computational requirements
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H04B2201/70714 4 Reducing hardware requirements
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H04B2201/70715 3 with application-specific features
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H04B2201/70716 3 Quadrature
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H04B2201/70718 3 Particular systems or standards
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H04B2201/70719 4 CDMA2000
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H04B2201/7072 4 HDR
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H04B2201/70722 4 HSDPA/HSUPA
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H04B2201/70723 5 Multi-carrier HSPA
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H04B2201/70724 4 UMTS
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H04B2201/70726 4 Asynchronous CDMA
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H04B2201/70727 3 using fast Fourier transform
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H04B2201/70728 3 Frequency aspects
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H04B2201/7073 3 Direct sequence modulation synchronisation
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H04B2201/70733 4 2D search
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H04B2201/70736 4 DSA
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H04B2201/7097 3 Direct sequence modulation interference
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H04B2201/709709 4 Methods of preventing interference
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H04B2201/709718 4 Determine interference
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H04B2201/709727 4 GRAKE type RAKE receivers
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H04B2201/709736 4 Hybrid interference mitigation schemes
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H04B2201/709745 4 Iterative interference mitigation schemes
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H04B2201/709754 4 Blind joint detection
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H04B2201/709763 4 Joint detection using feedback
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H04B2201/709772 4 Joint detection using feedforward
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H04B2201/709781 4 Linear detectors for joint detection
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H04B2201/70979 4 Fat finger issues in RAKE receivers
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H04B2201/713 2 Frequency hopping
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H04B2201/71307 3 Partial band interference
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H04B2201/71315 3 Wide band interference
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H04B2201/71323 3 Adaptive systems
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H04B2201/7133 3 Asymmetric systems
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H04B2201/71338 3 Asynchronous systems
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H04B2201/71346 3 Bluetooth
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H04B2201/71353 3 Fast frequency hopping
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H04B2201/71361 3 Slow frequency hopping
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H04B2201/71369 3 OFCHM
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H04B2201/71376 3 Threshold
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H04B2201/71384 3 Look-up tables
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H04B2201/7163 2 Orthogonal indexing scheme relating to impulse radio
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H04B2201/71632 3 Diversity
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H04B2201/71634 3 Applied to ranging
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H04B2201/71636 3 Transmitted reference
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H04B2201/71638 3 Spectrum issues
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H04B2203/00 0 Indexing scheme relating to line transmission systems
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H04B2203/54 1 Aspects of powerline communications not already covered by H04B3/54 and its subgroups
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H04B2203/5404 2 Methods of transmitting or receiving signals via power distribution lines
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H04B2203/5408 3 using protocols
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H04B2203/5412 3 by modofying wave form of the power source
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H04B2203/5416 3 by adding signals to the wave form of the power source
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H04B2203/542 3 using zero crossing information
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H04B2203/5425 3 improving S/N by matching impedance, noise reduction, gain control
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H04B2203/5429 2 Applications for powerline communications
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H04B2203/5433 3 Remote metering
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H04B2203/5437 3 Wired telephone
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H04B2203/5441 3 Wireless systems or telephone
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H04B2203/5445 3 Local network
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H04B2203/545 3 Audio/video application, e.g. interphone
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H04B2203/5454 3 Adapter and plugs
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H04B2203/5458 3 Monitor sensor; Alarm systems
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H04B2203/5462 2 Systems for power line communications
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H04B2203/5466 3 using three phases conductors
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H04B2203/547 3 via DC power distribution
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H04B2203/5475 3 adapted for drill or well combined with data transmission
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H04B2203/5479 3 using repeaters
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H04B2203/5483 3 using coupling circuits
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H04B2203/5487 4 cables
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H04B2203/5491 3 using filtering and bypassing
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H04B2203/5495 3 having measurements and testing channel
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H04B2210/00 0 Indexing scheme relating to optical transmission systems
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H04B2210/003 1 Devices including multiple stages, e.g., multi-stage optical amplifiers or dispersion compensators
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H04B2210/006 1 Devices for generating or processing an RF signal by optical means
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H04B2210/07 1 Monitoring an optical transmission system using a supervisory signal (OAM for WDM transmission H04J14/0272)
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H04B2210/071 2 using alarms
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H04B2210/072 2 using an overhead signal
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H04B2210/074 2 using a superposed, over-modulated signal
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H04B2210/075 2 using a pilot tone
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H04B2210/077 2 using a separate fibre
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H04B2210/078 2 using a separate wavelength
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H04B2210/08 1 Shut-down or eye-safety
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H04B2210/25 1 Distortion or dispersion compensation
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H04B2210/252 2 after the transmission line, i.e. post-compensation
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H04B2210/254 2 before the transmission line, i.e. pre-compensation
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H04B2210/256 2 at the repeater, i.e. repeater compensation
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H04B2210/258 2 treating each wavelength or wavelength band separately
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H04B2210/516 1 Optical conversion of optical modulation formats, e.g., from optical ASK to optical PSK
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H04B2210/517 1 Optical NRZ to RZ conversion, or vice versa
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H04B2215/00 0 Reducing interference at the transmission system level
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H04B2215/061 1 Reduction of burst noise, e.g. in TDMA systems
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H04B2215/062 2 by inhibiting burst transmission
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H04B2215/063 2 by smoothing the transmission power envelope
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H04B2215/064 1 Reduction of clock or synthesizer reference frequency harmonics
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H04B2215/065 2 by changing the frequency of clock or reference frequency
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H04B2215/066 2 by stopping a clock generator
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H04B2215/067 2 by modulation dispersion
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H04B2215/068 2 by avoiding a reception frequency range
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H04B2215/069 1 Reduction of switch mode power supply ripple
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H04H BROADCAST COMMUNICATION (multiplex communication H04J; pictorial communication aspects of broadcast systems H04N)
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H04H20/00 0 Arrangements for broadcast or for distribution combined with broadcast
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H04H20/02 1 Arrangements for relaying broadcast information
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H04H20/04 2 from field pickup units [FPU]
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H04H20/06 2 among broadcast stations
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H04H20/08 2 among terminal devices
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H04H20/10 1 Arrangements for replacing or switching information during the broadcast or the distribution
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H04H20/103 2 {Transmitter-side switching}
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H04H20/106 2 {Receiver-side switching}
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H04H20/12 1 Arrangements for observation, testing or troubleshooting
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H04H20/14 2 for monitoring programmes
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H04H20/16 1 Arrangements for broadcast or for distribution of identical information repeatedly
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H04H20/18 1 Arrangements for synchronising broadcast or distribution via plural systems
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H04H20/20 1 Arrangements for broadcast or distribution of identical information via plural systems
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H04H20/22 2 Arrangements for broadcast of identical information via plural broadcast systems
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H04H20/24 2 Arrangements for distribution of identical information via broadcast system and non-broadcast system
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H04H20/26 1 Arrangements for switching distribution systems
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H04H20/28 1 Arrangements for simultaneous broadcast of plural pieces of information
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H04H20/30 2 by a single channel
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H04H20/31 3 using in-band signals, e.g. subsonic or cue signal
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H04H20/33 2 by plural channels
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H04H20/34 3 using an out-of-band subcarrier signal
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H04H20/36 2 for AM broadcasts
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H04H20/38 1 Arrangements for distribution where lower stations, e.g. receivers, interact with the broadcast
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H04H20/40 1 Arrangements for broadcast specially adapted for accumulation-type receivers
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H04H20/42 1 Arrangements for resource management
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H04H20/423 2 {Transmitter side}
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H04H20/426 2 {Receiver side}
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H04H20/44 1 Arrangements characterised by circuits or components specially adapted for broadcast
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H04H20/46 2 specially adapted for broadcast systems covered by groups H04H20/53-H04H20/95
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H04H20/47 3 specially adapted for stereophonic broadcast systems
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H04H20/48 4 for FM stereophonic broadcast systems
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H04H20/49 4 for AM stereophonic broadcast systems
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H04H20/51 3 specially adapted for satellite broadcast systems
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H04H20/53 1 Arrangements specially adapted for specific applications, e.g. for traffic information or for mobile receivers
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H04H20/55 2 for traffic information
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H04H20/57 2 for mobile receivers
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H04H20/59 2 for emergency or urgency
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H04H20/61 2 for local area broadcast, e.g. instore broadcast
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H04H20/62 3 for transportation systems, e.g. in vehicles
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H04H20/63 3 to plural spots in a confined site, e.g. MATV [Master Antenna Television]
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H04H20/65 1 Arrangements characterised by transmission systems for broadcast
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H04H20/67 2 Common-wave systems, i.e. using separate transmitters operating on substantially the same frequency
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H04H20/69 2 Optical systems
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H04H20/71 2 Wireless systems
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H04H20/72 3 of terrestrial networks
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H04H20/74 3 of satellite networks
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H04H20/76 2 Wired systems
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H04H20/77 3 using carrier waves
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H04H20/78 4 CATV [Community Antenna Television] systems
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H04H20/79 5 using downlink of the CATV systems, e.g. audio broadcast via CATV network
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H04H20/80 4 having frequencies in two or more frequency bands, e.g. medium wave and VHF
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H04H20/81 4 combined with telephone network over which the broadcast is continuously available
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H04H20/82 3 using signals not modulated onto a carrier
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H04H20/83 4 not sharing the network with any other service
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H04H20/84 3 combined with power distribution network
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H04H20/86 1 Arrangements characterised by the broadcast information itself
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H04H20/88 2 Stereophonic broadcast systems {(multiplex system in general H04J)}
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H04H20/89 3 using three or more audio channels, e.g. triphonic or quadraphonic
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H04H20/91 2 broadcasting computer programmes
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H04H20/93 2 which locates resources of other pieces of information, e.g. URL [Uniform Resource Locator]
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H04H20/95 2 characterised by a specific format, e.g. MP3 (MPEG-1 Audio Layer 3)
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H04H40/00 0 Arrangements specially adapted for receiving broadcast information
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H04H40/09 1 Arrangements for receiving desired information automatically according to timetables
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H04H40/18 1 Arrangements characterised by circuits or components specially adapted for receiving
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H04H40/27 2 specially adapted for broadcast systems covered by groups H04H20/53 - H04H20/95
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H04H40/36 3 specially adapted for stereophonic broadcast receiving
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H04H40/45 4 for FM stereophonic broadcast systems receiving
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H04H40/54 5 generating subcarriers
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H04H40/63 5 for separation improvements or adjustments
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H04H40/72 5 for noise suppression
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H04H40/81 5 for stereo-monaural switching
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H04H40/90 3 specially adapted for satellite broadcast receiving
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H04H60/00 0 Arrangements for broadcast applications with a direct linking to broadcast information or broadcast space-time; Broadcast-related systems
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H04H60/02 1 Arrangements for generating broadcast information; Arrangements for generating broadcast-related information with a direct linking to broadcast information or to broadcast space-time; Arrangements for simultaneous generation of broadcast information and broadcast-related information
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H04H60/04 2 Studio equipment; Interconnection of studios
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H04H60/05 3 Mobile studios
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H04H60/06 2 Arrangements for scheduling broadcast services or broadcast-related services
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H04H60/07 2 characterised by processes or methods for the generation
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H04H60/09 1 Arrangements for device control with a direct linkage to broadcast information or to broadcast space-time; Arrangements for control of broadcast-related services
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H04H60/11 2 Arrangements for counter-measures when a portion of broadcast information is unavailable
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H04H60/12 3 wherein another information is substituted for the portion of broadcast information
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H04H60/13 2 Arrangements for device control affected by the broadcast information
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H04H60/14 2 Arrangements for conditional access to broadcast information or to broadcast-related services
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H04H60/15 3 on receiving information
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H04H60/16 3 on playing information
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H04H60/17 3 on recording information
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H04H60/18 3 on copying information
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H04H60/19 3 on transmission of information
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H04H60/20 3 on secondary editing information
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H04H60/21 3 Billing for the use of broadcast information or broadcast-related information
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H04H60/22 4 per use
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H04H60/23 3 using cryptography, e.g. encryption, authentication, key distribution
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H04H60/25 1 Arrangements for updating broadcast information or broadcast-related information
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H04H60/27 1 Arrangements for recording or accumulating broadcast information or broadcast-related information
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H04H60/29 1 Arrangements for monitoring broadcast services or broadcast-related services
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H04H60/31 2 Arrangements for monitoring the use made of the broadcast services
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H04H60/32 2 Arrangements for monitoring conditions of receiving stations, e.g. malfunction or breakdown of receiving stations
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H04H60/33 2 Arrangements for monitoring the users' behaviour or opinions
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H04H60/35 1 Arrangements for identifying or recognising characteristics with a direct linkage to broadcast information or to broadcast space-time, e.g. for identifying broadcast stations or for identifying users
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H04H60/37 2 for identifying segments of broadcast information, e.g. scenes or extracting programme ID
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H04H60/372 3 {Programme}
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H04H60/375 3 {Commercial}
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H04H60/377 3 {Scene}
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H04H60/38 2 for identifying broadcast time or space
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H04H60/39 3 for identifying broadcast space-time (use of Electronic Programme Guides H04H60/72)
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H04H60/40 3 for identifying broadcast time
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H04H60/41 3 for identifying broadcast space, i.e. broadcast channels, broadcast stations or broadcast areas
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H04H60/42 4 for identifying broadcast areas
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H04H60/43 4 for identifying broadcast channels
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H04H60/44 4 for identifying broadcast stations
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H04H60/45 2 for identifying users
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H04H60/46 2 for recognising users' preferences
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H04H60/47 2 for recognising genres
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H04H60/48 2 for recognising items expressed in broadcast information
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H04H60/49 2 for identifying locations
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H04H60/50 3 of broadcast or relay stations
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H04H60/51 3 of receiving stations
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H04H60/52 3 of users
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H04H60/53 3 of destinations
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H04H60/54 3 where broadcast information is generated
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H04H60/56 1 Arrangements characterised by components specially adapted for monitoring, identification or recognition covered by groups H04H60/29-H04H60/54
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H04H60/58 2 of audio {(determination or detection of speech characteristics in general G10L25/00; speech recognition in general G10L15/00)}
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H04H60/59 2 of video {(recognising characters or patterns in general G06F18/00, G06V20/00)}
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H04H60/61 1 Arrangements for services using the result of monitoring, identification or recognition covered by groups H04H60/29-H04H60/54
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H04H60/63 2 for services of sales {(data processing systems or methods specially adapted for electronic commerce G06Q30/00)}
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H04H60/64 2 for providing detail information
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H04H60/65 2 for using the result on users' side
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H04H60/66 2 for using the result on distributors' side
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H04H60/68 1 Systems specially adapted for using specific information, e.g. geographical or meteorological information
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H04H60/70 2 using geographical information, e.g. maps, charts or atlases
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H04H60/71 2 using meteorological information
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H04H60/72 2 using electronic programme guides [EPG] (focusing on identifying broadcast space time H04H60/39 {; menu type display of EPG in television receivers H04N21/47})
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H04H60/73 2 using meta-information
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H04H60/74 3 using programme related information, e.g. title, composer or interpreter
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H04H60/76 1 Arrangements characterised by transmission systems other than for broadcast, e.g. the Internet {(for broadcast H04H20/65)}
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H04H60/78 2 characterised by source locations or destination locations
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H04H60/79 3 characterised by transmission among broadcast stations
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H04H60/80 3 characterised by transmission among terminal devices
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H04H60/81 2 characterised by the transmission system itself
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H04H60/82 3 the transmission system being the Internet
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H04H60/83 4 accessed over telephonic networks
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H04H60/84 5 which are fixed telephone networks
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H04H60/85 5 which are mobile communication networks
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H04H60/86 4 accessed over CATV networks
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H04H60/87 4 accessed over computer networks
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H04H60/88 5 which are wireless networks
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H04H60/89 5 which are wired networks
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H04H60/90 3 Wireless transmission systems
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H04H60/91 4 Mobile communication networks (for accessing the Internet H04H60/85)
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H04H60/92 4 for local area
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H04H60/93 3 Wired transmission systems
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H04H60/94 4 Telephonic networks (for accessing the Internet H04H60/84)
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H04H60/95 4 for local area
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H04H60/96 4 CATV systems (for accessing the Internet H04H60/86)
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H04H60/97 5 using uplink of the CATV systems
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H04H60/98 3 Physical distribution of media, e.g. postcards, CDs or DVDs
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H04H2201/00 0 Aspects of broadcast communication
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H04H2201/10 1 characterised by the type of broadcast system
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H04H2201/11 2 digital multimedia broadcasting [DMB]
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H04H2201/12 2 digital radio mondiale [DRM]
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H04H2201/13 2 radio data system/radio broadcast data system [RDS/RBDS]
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H04H2201/14 2 direct broadcast satellite [DBS]
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H04H2201/15 2 system for wireless information forwarding and teledistribution [SWIFT]
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H04H2201/16 2 digital video broadcasting - handhelds [DVB-H]
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H04H2201/17 2 in band adjacent channel [IBAC]
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H04H2201/18 2 in band on channel [IBOC]
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H04H2201/183 3 FM digital or hybrid
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H04H2201/186 3 AM digital or hybrid
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H04H2201/19 2 digital satellite radio [DSR]
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H04H2201/20 2 digital audio broadcasting [DAB]
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H04H2201/30 1 characterised by the use of a return channel, e.g. for collecting users' opinions, for returning broadcast space/time information or for requesting data
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H04H2201/33 2 via the broadcast channel
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H04H2201/37 2 via a different channel
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H04H2201/40 1 characterised in that additional data relating to the broadcast data are available via a different channel than the broadcast channel
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H04H2201/50 1 characterised by the use of watermarks
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H04H2201/60 1 characterised in that the receiver comprises more than one tuner
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H04H2201/70 1 characterised in that receivers can be addressed
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H04H2201/80 1 characterised in that motion picture association of America [MPAA] ratings are used
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H04H2201/90 1 characterised by the use of signatures
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H04J MULTIPLEX COMMUNICATION (transmission in general H04B; peculiar to transmission of digital information H04L5/00; systems for the simultaneous or sequential transmission of more than one television signal H04N7/08; in exchanges H04Q11/00; stereophonic systems H04S)
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H04J1/00 0 Frequency-division multiplex systems (H04J14/00 takes precedence)
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H04J1/02 1 Details
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H04J1/04 2 Frequency-transposition arrangements {(modulation with carrier or side-band suppression H03C1/52, H03C1/60; single-band suppression H04B1/00, H04B15/00; telegraphic communication H04L27/02, H04L25/49; transference of modulation from one carrier to another, e.g. frequency- changing H03D7/00; demodulation or transference of modulation of modulated electromagnetic waves H03D9/00)}
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H04J1/045 3 {Filters applied to frequency transposition}
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H04J1/05 3 using digital techniques
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H04J1/06 2 Arrangements for supplying the carrier waves {Arrangements for supplying synchronisation signals (carrier supply H04L5/10; frequency multiplication H03B19/00, H03B21/00; mixing H03D7/00, H03D9/00; synchronisation in general H03B)}
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H04J1/065 3 {Synchronisation of carrier sources at the receiving station with the carrier source at the transmitting station}
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H04J1/08 2 Arrangements for combining channels {(branching filters H01P1/213, H03H7/46)}
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H04J1/085 3 {Terminal station; Combined modulator and demodulator circuits}
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H04J1/10 2 Intermediate station arrangements, e.g. for branching, for tapping-off {(repeater circuits H04B3/36, H04B3/58; two-way amplifiers H03F3/62)}
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H04J1/12 2 Arrangements for reducing cross-talk between channels {(in line transmission systems H04B3/32; in cables or lines H04B3/26 - H04B3/30)}
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H04J1/14 2 Arrangements providing for calling or supervisory signals
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H04J1/16 2 Monitoring arrangements {(for transmission in general H04B17/00; for amplifiers H03F1/52, H03F1/523)}
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H04J1/18 1 in which all the carriers are amplitude-modulated (H04J1/02 takes precedence {in telephony H04Q11/02, H04Q11/023; in stereophony H04H; in telegraphy H04L5/06; in telemetry G08C15/02, G08C15/04})
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H04J1/20 1 in which at least one carrier is angle-modulated (H04J1/02 takes precedence; FM without multiplex H04B1/00, H04B14/006, H04B15/00; PSK H04L5/12; impulse-modulation without multiplex H04B14/02; time-division multiplexing for data transmission H04L5/22; telemetry G08C15/06 - G08C15/12; telephony H04Q11/00, H04Q11/04, H04Q11/0407)
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H04J3/00 0 Time-division multiplex systems (H04J14/00 takes precedence; relay systems H04B7/14; selecting techniques H04Q)
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H04J3/02 1 Details (electronic switching or gating H03K17/00)
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H04J3/025 2 {Filter arrangements (H04J3/08 takes precedence; filters per se H03H7/00, H03H9/00)}
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H04J3/04 2 Distributors combined with modulators or demodulators {(pulse distributors in general H03K5/15; pulse counters H03K21/00 - H03K29/06; for telegraphy H04L5/22, H04L13/00 - H04L23/00, H04L25/45; for telephony H04Q11/04)}
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H04J3/042 3 {Distributors with electron or gas discharge tubes}
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H04J3/045 3 {Distributors with CRT}
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H04J3/047 3 {Distributors with transistors or integrated circuits}
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H04J3/06 2 Synchronising arrangements {(for television systems H04N5/04; bit-synchronisation H04L7/00)}
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H04J3/0602 3 {Systems characterised by the synchronising information used}
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H04J3/0605 4 {Special codes used as synchronising signal}
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H04J3/0608 5 {Detectors therefor, e.g. correlators, state machines}
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H04J3/0611 5 {PN codes (H04J3/0608 takes precedence)}
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H04J3/0614 4 {the synchronising signal being characterised by the amplitude, duration or polarity}
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H04J3/0617 4 {the synchronising signal being characterised by the frequency or phase}
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H04J3/062 3 {Synchronisation of signals having the same nominal but fluctuating bit rates, e.g. using buffers (pulse-stuffing H04J3/07; asynchronous-synchronous conversion H04L5/24; speed conversion H04L25/05; speed conversion in computers G06F5/06)}
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H04J3/0623 4 {Synchronous multiplexing systems, e.g. synchronous digital hierarchy/synchronous optical network (SDH/SONET), synchronisation with a pointer process}
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H04J3/0626 4 {plesiochronous multiplexing systems, e.g. plesiochronous digital hierarchy [PDH], jitter attenuators}
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H04J3/0629 5 {in a network, e.g. in combination with switching or multiplexing, slip buffers}
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H04J3/0632 4 {Synchronisation of packets and cells, e.g. transmission of voice via a packet network, circuit emulation service [CES] (queuing arrangements in packet switching elements H04L49/90; synchronising systems for the synchronous transmission of a pulse code modulated video signal with one or more other pulse code modulated signals H04N7/56)}
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H04J3/0635 3 {Clock or time synchronisation in a network (timer in protocols H04L69/28)}
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H04J3/0638 4 {Clock or time synchronisation among nodes; Internode synchronisation (synchronization for ring networks H04L12/422; data switching networks with synchronous transmission H04L12/43)}
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H04J3/0641 5 {Change of the master or reference, e.g. take-over or failure of the master}
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H04J3/0644 5 {External master-clock}
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H04J3/0647 5 {Synchronisation among TDM nodes}
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H04J3/065 6 {using timestamps}
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H04J3/0652 5 {Synchronisation among time division multiple access [TDMA] nodes, e.g. time triggered protocol [TTP] (bus network with centralized control in which slots are of a TDMA packet structure H04L12/4035)}
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H04J3/0655 6 {using timestamps}
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H04J3/0658 5 {Clock or time synchronisation among packet nodes}
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H04J3/0661 6 {using timestamps}
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H04J3/0664 7 {unidirectional timestamps}
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H04J3/0667 7 {Bidirectional timestamps, e.g. NTP or PTP for compensation of clock drift and for compensation of propagation delays (arrangements for monitoring round trip delays in packet switching networks H04L43/0864)}
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H04J3/067 7 {Details of the timestamp structure}
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H04J3/0673 6 {using intermediate nodes, e.g. modification of a received timestamp before further transmission to the next packet node, e.g. including internal delay time or residence time into the packet}
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H04J3/0676 4 {Mutual}
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H04J3/0679 4 {by determining clock distribution path in a network}
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H04J3/0682 4 {by delay compensation, e.g. by compensation of propagation delay or variations thereof, by ranging}
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H04J3/0685 4 {Clock or time synchronisation in a node; Intranode synchronisation}
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H04J3/0688 5 {Change of the master or reference, e.g. take-over or failure of the master}
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H04J3/0691 5 {Synchronisation in a TDM node}
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H04J3/0694 5 {Synchronisation in a TDMA node, e.g. TTP}
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H04J3/0697 5 {Synchronisation in a packet node}
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H04J3/07 3 using pulse stuffing for systems with different or fluctuating information rates {or bit rates}
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H04J3/073 4 {Bit stuffing, e.g. PDH}
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H04J3/076 4 {Bit and byte stuffing, e.g. SDH/PDH desynchronisers, bit-leaking}
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H04J3/08 2 Intermediate station arrangements, e.g. for branching, for tapping-off
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H04J3/085 3 {for ring networks, e.g. SDH/SONET rings, self-healing rings, meashed SDH/SONET networks}
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H04J3/10 2 Arrangements for reducing cross-talk between channels
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H04J3/12 2 Arrangements providing for calling or supervisory signals
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H04J3/125 3 {One of the channel pulses or the synchronisation pulse is also used for transmitting monitoring or supervisory signals}
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H04J3/14 2 Monitoring arrangements {(for SDH/SONET rings H04J3/085)}
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H04J3/16 1 in which the time allocation to individual channels within a transmission cycle is variable, e.g. to accommodate varying complexity of signals, to vary number of channels transmitted (H04J3/17, H04J3/24 take precedence)
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H04J3/1605 2 {Fixed allocated frame structures}
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H04J3/1611 3 {Synchronous digital hierarchy [SDH] or SONET (H04J3/1664 takes precedence for interactions with OTN)}
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H04J3/1617 4 {carrying packets or ATM cells}
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H04J3/1623 3 {Plesiochronous digital hierarchy [PDH]}
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H04J3/1629 4 {Format building algorithm}
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H04J3/1635 4 {Format conversion, e.g. CEPT/US}
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H04J3/1641 4 {Hierarchical systems}
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H04J3/1647 4 {Subrate or multislot multiplexing}
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H04J3/1652 3 {Optical Transport Network [OTN]}
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H04J3/1658 4 {carrying packets or ATM cells; (H04J3/1664 takes precedence for payloads with different packet types)}
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H04J3/1664 4 {carrying hybrid payloads, e.g. different types of packets or carrying frames and packets in the paylaod}
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H04J3/167 4 {interaction with SDH/SONET, e.g. carrying SDH/SONET frames, interfacing with SDH/SONET (H04J3/1664 takes precedence)}
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H04J3/1676 2 {Time-division multiplex with pulse-position, pulse-interval, or pulse-width modulation}
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H04J3/1682 2 {Allocation of channels according to the instantaneous demands of the users, e.g. concentrated multiplexers, statistical multiplexers}
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H04J3/1688 3 {the demands of the users being taken into account after redundancy removal, e.g. by predictive coding, by variable sampling (reducing bandwidth of signals in general H04B1/66; in PCM-systems H04B14/046; removal of redundancy in telegraph communication H03M7/30)}
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H04J3/1694 2 {Allocation of channels in TDM/TDMA networks, e.g. distributed multiplexers (Passive Optical Networks H04Q11/0062)}
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H04J3/17 1 in which the transmission channel allotted to a first user may be taken away and re-allotted to a second user if the first user becomes inactive, e.g. TASI {(speech analysis or identification G10L)}
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H04J3/172 2 {Digital speech interpolation, i.e. DSI}
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H04J3/175 2 {Speech activity or inactivity detectors (echo suppressors H04B3/20)}
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H04J3/177 2 {Freeze-out systems, e.g. taking away active sources from transmission}
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H04J3/18 1 using frequency compression and subsequent expansion of the individual signals
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H04J3/20 1 using resonant transfer
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H04J3/22 1 in which the sources have different rates or codes {(simultaneous speech and digital data or video transmission H04M11/06; see provisional also H04J3/16)}
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H04J3/24 1 in which the allocation is indicated by an address {the different channels being transmitted sequentially}(H04J3/17 takes precedence; in computers G06F12/00, G06F13/00 {code multiplex systems H04J13/00; selecting techniques H04Q; relay systems H04B7/14})
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H04J3/242 2 {the frames being of variable length}
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H04J3/245 2 {in which the allocation protocols between more than two stations share the same transmission medium (stations for satellite systems H04B7/185)}
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H04J3/247 2 {ATM or packet multiplexing}
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H04J3/26 2 in which the information and the address are simultaneously transmitted
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H04J4/00 0 Combined time-division and frequency-division multiplex systems (H04J13/00 takes precedence {; data transmission H04L5/26; telemetry G08C15/00})
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H04J4/005 1 {Transmultiplexing}
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H04J7/00 0 Multiplex systems in which the amplitudes or durations of the signals in individual channels are characteristic of those channels
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H04J7/02 1 in which the polarity of the amplitude is characteristic
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H04J9/00 0 Multiplex systems in which each channel is represented by a different type of modulation of the carrier
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H04J11/00 0 Orthogonal multiplex systems, {e.g. using WALSH codes}(H04J13/00 takes precedence)
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H04J2011/0003 1 {Combination with other multiplexing techniques}
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H04J2011/0006 2 {with CDM/CDMA}
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H04J2011/0009 2 {with FDM/FDMA}
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H04J2011/0013 2 {with TDM/TDMA}
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H04J2011/0016 2 {with FDM/FDMA and TDM/TDMA}
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H04J2011/002 2 {Delay multiplexing}
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H04J11/0023 1 {Interference mitigation or co-ordination (direct sequence spread spectrum [DSSS] systems H04B1/7097; frequency hopping H04B1/713; allocation criteria for ingress interference avoidance H04L5/0062; frequency allocation criteria for requirements on out-of-channel emissions H04L5/0066; arrangements for removing intersymbol interference or baseband equalisers H04L25/03006; peak power aspects in multicarrier modulation H04L27/2614; power management H04W52/00; traffic scheduling H04W72/54, H04W72/541)}
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H04J11/0026 2 {of multi-user interference}
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H04J11/003 3 {at the transmitter (transmission to multiple receive units in multiple input multiple output [MIMO] H04B7/0452; transmit antenna weighting H04B7/0615)}
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H04J11/0033 4 {by pre-cancellation of known interference, e.g. using a matched filter, dirty paper coder or Thomlinson-Harashima precoder (correlative coding in synchronous or start-stop systems H04L25/497)}
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H04J11/0036 3 {at the receiver}
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H04J11/004 4 {using regenerative subtractive interference cancellation}
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H04J11/0043 5 {by grouping or ordering the users}
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H04J11/0046 4 {using joint detection algorithms}
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H04J11/005 2 {of intercell interference}
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H04J11/0053 3 {using co-ordinated multipoint transmission/reception (co-ordinated antenna or beam-forming aspects H04B7/022)}
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H04J11/0056 3 {Inter-base station aspects}
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H04J11/0059 3 {Out-of-cell user aspects}
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H04J11/0063 2 {of multipath interference, e.g. Rake receivers}
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H04J11/0066 2 {of narrowband interference (narrowband interference reduction H04B1/1036)}
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H04J11/0069 1 {Cell search, i.e. determining cell identity [cell-ID] (design of multiplexing codes H04J13/00; processing access restriction or access information H04W48/16; discovery of network devices for network data management H04W8/005; sounding signals for channel estimation H04L25/0226; structure of reference signals in multicarrier modulation systems H04L27/2613; frame, time or carrier synchronisation in multicarrier modulation systems H04L27/2655)}
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H04J11/0073 2 {Acquisition of primary synchronisation channel, e.g. detection of cell-ID within cell-ID group}
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H04J11/0076 2 {Acquisition of secondary synchronisation channel, e.g. detection of cell-ID group}
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H04J11/0079 2 {Acquisition of downlink reference signals, e.g. detection of cell-ID}
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H04J11/0083 2 {Multi-mode cell search, i.e. where several modes or systems can be used, e.g. backwards compatible, dual mode or flexible systems}
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H04J11/0086 2 {Search parameters, e.g. search strategy, accumulation length, range of search, thresholds (code acquisition in DSSS H04B1/7075)}
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H04J11/0089 2 {Search hardware arrangements, e.g. sharing of correlators to reduce complexity}
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H04J11/0093 2 {Neighbour cell search}
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H04J2011/0096 1 {Network synchronisation}
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H04J13/00 0 Code division multiplex systems (for frequency hopping H04B1/713)
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H04J13/0003 1 {Code application, i.e. aspects relating to how codes are applied to form multiplexed channels}
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H04J13/0007 1 {Code type}
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H04J13/0011 2 {Complementary}
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H04J13/0014 3 {Golay}
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H04J13/0018 2 {Chaotic}
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H04J13/0022 2 {PN, e.g. Kronecker}
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H04J13/0025 3 {M-sequences}
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H04J13/0029 3 {Gold}
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H04J13/0033 3 {Kasami}
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H04J2013/0037 2 {Multilevel codes}
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H04J13/004 2 {Orthogonal}
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H04J13/0044 3 {OVSF [orthogonal variable spreading factor]}
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H04J13/0048 3 {Walsh}
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H04J13/0051 3 {Orthogonal gold}
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H04J13/0055 2 {ZCZ [zero correlation zone]}
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H04J13/0059 3 {CAZAC [constant-amplitude and zero auto-correlation]}
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H04J13/0062 4 {Zadoff-Chu}
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H04J13/0066 4 {GCL [generalized chirp-like] sequences}
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H04J13/007 3 {LAS, i.e. LA, LS and LAS codes}
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H04J13/0074 1 {Code shifting or hopping}
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H04J13/0077 1 {Multicode, e.g. multiple codes assigned to one user}
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H04J2013/0081 2 {with FDM/FDMA}
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H04J2013/0085 2 {with TDM/TDMA}
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H04J2013/0088 2 {with FDM/FDMA and TDM/TDMA}
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H04J2013/0092 2 {Delay multiplexing}
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H04J2013/0096 1 {Network synchronisation}
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H04J13/10 1 Code generation
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H04J13/102 2 {Combining codes}
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H04J13/105 3 {by extending}
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H04J13/107 3 {by concatenation}
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H04J13/12 2 Generation of orthogonal codes
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H04J13/14 2 Generation of codes with a zero correlation zone
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H04J13/16 1 Code allocation
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H04J2013/165 2 {Joint allocation of code together with frequency or time}
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H04J13/18 2 Allocation of orthogonal codes
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H04J13/20 3 having an orthogonal variable spreading factor [OVSF]
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H04J13/22 2 Allocation of codes with a zero correlation zone
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H04J14/00 0 Optical multiplex systems (optical coupling, mixing or splitting, per se G02B)
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H04J14/002 1 {Coherencemultiplexing}
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H04J14/005 1 {Optical Code Multiplex}
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H04J14/007 2 {Orthogonal Optical Code Multiplex}
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H04J14/02 1 Wavelength-division multiplex systems
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H04J14/0201 2 {Add-and-drop multiplexing}
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H04J14/0202 3 {Arrangements therefor}
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H04J14/0204 4 {Broadcast and select arrangements, e.g. with an optical splitter at the input before adding or dropping}
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H04J14/0205 4 {Select and combine arrangements, e.g. with an optical combiner at the output after adding or dropping}
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H04J14/0206 4 {Express channels arrangements}
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H04J14/0208 4 {Interleaved arrangements}
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H04J14/0209 4 {Multi-stage arrangements, e.g. by cascading multiplexers or demultiplexers}
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H04J14/021 4 {Reconfigurable arrangements, e.g. reconfigurable optical add/drop multiplexers [ROADM] or tunable optical add/drop multiplexers [TOADM]}
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H04J14/0212 5 {using optical switches or wavelength selective switches [WSS]}
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H04J14/0213 4 {Groups of channels or wave bands arrangements}
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H04J14/0215 3 {Architecture aspects}
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H04J14/0216 4 {Bidirectional architectures}
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H04J14/0217 4 {Multi-degree architectures, e.g. having a connection degree greater than two}
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H04J14/0219 4 {Modular or upgradable architectures}
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H04J14/022 4 {For interconnection of WDM optical networks}
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H04J14/0221 2 {Power control, e.g. to keep the total optical power constant}
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H04J14/0223 2 {Conversion to or from optical TDM}
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H04J14/0224 2 {Irregular wavelength spacing, e.g. to accommodate interference to all wavelengths}
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H04J14/0226 2 {Fixed carrier allocation, e.g. according to service}
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H04J14/0227 2 {Operation, administration, maintenance or provisioning [OAMP] of WDM networks, e.g. media access, routing or wavelength allocation}
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H04J14/0228 3 {Wavelength allocation for communications one-to-all, e.g. broadcasting wavelengths}
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H04J14/023 4 {in WDM passive optical networks [WDM-PON]}
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H04J14/0232 5 {for downstream transmission}
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H04J14/0234 6 {using multiple wavelengths}
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H04J14/0235 5 {for upstream transmission}
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H04J14/0236 6 {using multiple wavelengths}
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H04J14/0238 3 {Wavelength allocation for communications one-to-many, e.g. multicasting wavelengths}
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H04J14/0239 4 {in WDM-PON sharing multiple downstream wavelengths for groups of optical network units [ONU], e.g. multicasting wavelengths}
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H04J14/0241 3 {Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths}
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H04J14/0242 4 {in WDM-PON}
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H04J14/0245 5 {for downstream transmission, e.g. optical line terminal [OLT] to ONU}
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H04J14/0246 6 {using one wavelength per ONU}
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H04J14/0247 6 {Sharing one wavelength for at least a group of ONUs}
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H04J14/0249 5 {for upstream transmission, e.g. ONU-to-OLT or ONU-to-ONU}
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H04J14/025 6 {using one wavelength per ONU, e.g. for transmissions from-ONU-to-OLT or from-ONU-to-ONU}
|
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H04J14/0252 6 {Sharing one wavelength for at least a group of ONUs, e.g. for transmissions from-ONU-to-OLT or from-ONU-to-ONU}
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H04J2014/0253 5 {Allocation of downstream wavelengths for upstream transmission (optical transmission using a single light source for multiple stations H04B10/2587)}
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H04J14/0254 3 {Optical medium access}
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H04J14/0256 4 {at the optical channel layer}
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H04J14/0257 5 {Wavelength assignment algorithms}
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H04J14/0258 5 {Wavelength identification or labelling}
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H04J14/026 5 {using WDM channels of different transmission rates}
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H04J14/0261 4 {at the optical multiplex section layer}
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H04J14/0263 5 {Multiplex section layer wavelength assignment algorithms}
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H04J14/0264 5 {Multiplex identification or labelling}
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H04J14/0265 5 {Multiplex arrangements in bidirectional systems, e.g. interleaved allocation of wavelengths or allocation of wavelength groups}
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H04J14/0267 4 {Optical signaling or routing (routing or path finding of packets in data switching networks H04L45/00)}
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H04J14/0268 5 {Restoration of optical paths, e.g. p-cycles (route fault recovery of packets in data switching networks H04L45/28)}
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H04J14/0269 5 {using tables for routing (organization of routing tables of packets in data switching networks H04L45/54)}
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H04J14/0271 5 {Impairment aware routing}
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H04J14/0272 4 {Transmission of OAMP information (using a supervisory or additional signal for monitoring of optical transmission parameters in general H04B10/077)}
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H04J14/0273 5 {using optical overhead, e.g. overhead processing}
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H04J14/0275 5 {using an optical service channel}
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H04J14/0276 5 {using pilot tones}
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H04J14/0278 2 {WDM optical network architectures}
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H04J14/0279 3 {WDM point-to-point architectures}
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H04J14/028 3 {WDM bus architectures}
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H04J14/0282 3 {WDM tree architectures}
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H04J14/0283 3 {WDM ring architectures}
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H04J14/0284 3 {WDM mesh architectures}
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H04J14/0286 3 {WDM hierarchical architectures}
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H04J14/0287 2 {Protection in WDM systems}
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H04J14/0289 3 {Optical multiplex section protection}
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H04J14/029 4 {Dedicated protection at the optical multiplex section (1+1)}
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H04J14/0291 4 {Shared protection at the optical multiplex section (1:1, n:m)}
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H04J14/0293 3 {Optical channel protection}
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H04J14/0294 4 {Dedicated protection at the optical channel (1+1)}
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H04J14/0295 4 {Shared protection at the optical channel (1:1, n:m)}
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H04J14/0297 3 {Optical equipment protection}
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H04J14/0298 2 {with sub-carrier multiplexing [SCM]}
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H04J14/04 1 Mode multiplex systems
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H04J14/06 1 Polarisation multiplex systems
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H04J14/08 1 Time-division multiplex systems
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H04J14/083 2 {Add and drop multiplexing}
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H04J14/086 2 {Medium access (H04J3/16 takes precedence)}
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H04J99/00 0 Subject matter not provided for in other groups of this subclass
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H04J2203/00 0 Aspects of optical multiplex systems other than those covered by H04J14/00
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H04J2203/0001 1 Provisions for broadband connections in integrated services digital network using frames of the Optical Transport Network [OTN] or using synchronous transfer mode [STM], e.g. SONET, SDH
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H04J2203/0003 2 Switching fabrics, e.g. transport network, control network
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H04J2203/0005 3 Switching elements
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H04J2203/0007 4 Space switch details
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H04J2203/0008 4 Time switch details
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H04J2203/001 4 using a shared central buffer
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H04J2203/0012 3 Switching modules and their interconnections
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H04J2203/0014 4 Clos
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H04J2203/0016 4 Crossbar
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H04J2203/0017 4 Parallel switch planes
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H04J2203/0019 3 Multicast/broadcast capabilities
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H04J2203/0021 3 Control mechanisms
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H04J2203/0023 3 Routing/path finding
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H04J2203/0025 3 Peripheral units
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H04J2203/0026 3 Physical details
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H04J2203/0028 2 Local loop
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H04J2203/003 3 Medium of transmission, e.g. fibre, cable, radio
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H04J2203/0032 4 Fibre
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H04J2203/0033 4 Metallic
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H04J2203/0035 4 Radio
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H04J2203/0037 4 Satellite
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H04J2203/0039 3 Topology
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H04J2203/0041 4 Star, e.g. cross-connect, concentrator, subscriber group equipment, remote electronics
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H04J2203/0042 4 Ring
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H04J2203/0044 4 Bus, e.g. DQDB
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H04J2203/0046 2 User Network Interface
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H04J2203/0048 3 Network termination, e.g. NT1, NT2, PBX
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H04J2203/005 3 Terminal equipment, e.g. codecs, synch
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H04J2203/0051 2 Network Node Interface, e.g. tandem connections, transit switching
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H04J2203/0053 3 Routing
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H04J2203/0055 3 Network design, dimensioning, topology or optimisation
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H04J2203/0057 2 Operations, administration and maintenance [OAM]
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H04J2203/0058 3 Network management, e.g. Intelligent nets
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H04J2203/006 3 Fault tolerance and recovery
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H04J2203/0062 2 Testing
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H04J2203/0064 2 Admission Control
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H04J2203/0066 3 Signalling, e.g. protocols, reference model
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H04J2203/0067 3 Resource management and allocation
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H04J2203/0069 4 Channel allocation
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H04J2203/0071 4 Monitoring
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H04J2203/0073 2 Services, e.g. multimedia, GOS, QOS
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H04J2203/0075 3 Connection-oriented
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H04J2203/0076 3 Channel characteristics, e.g. BER, error detection, error correction, delay, jitter
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H04J2203/0078 3 Support of N-ISDN
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H04J2203/008 3 Support of video
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H04J2203/0082 3 Interaction of SDH with non-ATM protocols
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H04J2203/0083 4 Support of the IP protocol
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H04J2203/0085 4 Support of Ethernet
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H04J2203/0087 3 Support of voice
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H04J2203/0089 2 Multiplexing, e.g. coding, scrambling, SONET
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H04J2203/0091 3 Time slot assignment
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H04J2203/0092 3 Code Division Multiple Access [CDMA]
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H04J2203/0094 3 Virtual Concatenation
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H04J2203/0096 3 Serial Concatenation
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H04J2203/0098 2 Traffic aspects, e.g. arbitration, load balancing, smoothing, buffer management
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H04J2211/00 0 Orthogonal indexing scheme relating to orthogonal multiplex systems
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H04J2211/001 1 using small cells within macro cells, e.g. femto, pico or microcells
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H04J2211/003 1 within particular systems or standards
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H04J2211/005 2 Long term evolution [LTE]
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H04J2211/006 2 Single carrier frequency division multiple access [SC FDMA]
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H04J2211/008 2 Interleaved frequency division multiple access [IFDMA]
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H04K SECRET COMMUNICATION; JAMMING OF COMMUNICATION
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H04K1/00 0 Secret communication
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H04K1/003 1 {by varying carrier frequency at or within predetermined or random intervals (H04K1/04 takes precedence)}
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H04K1/006 1 {by varying or inverting the phase, at periodic or random intervals}
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H04K1/02 1 by adding a second signal to make the desired signal unintelligible
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H04K1/025 2 {using an analogue chaotic signal}
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H04K1/04 1 by frequency scrambling, i.e. by transposing or inverting parts of the frequency band or by inverting the whole band
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H04K1/06 1 by transmitting the information or elements thereof at unnatural speeds or in jumbled order or backwards
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H04K1/08 1 by varying the polarisation of transmitted waves
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H04K1/10 1 by using two signals transmitted simultaneously or successively
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H04K3/00 0 Jamming of communication; Counter-measures
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H04K3/20 1 {Countermeasures against jamming (in radar G01S7/36; interference suppression in receivers H04B1/10)}
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H04K3/22 2 {including jamming detection and monitoring}
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H04K3/222 3 {wherein jamming detection includes detecting the absence or impossibility of intelligible communication on at least one channel}
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H04K3/224 3 {with countermeasures at transmission and/or reception of the jammed signal, e.g. stopping operation of transmitter or receiver, nulling or enhancing transmitted power in direction of or at frequency of jammer}
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H04K3/226 4 {Selection of non-jammed channel for communication (spectrum sharing arrangements H04W16/14; selection of wireless resources by user or terminal H04W72/02)}
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H04K3/228 4 {Elimination in the received signal of jamming or of data corrupted by jamming (interference suppression in receivers H04B1/10)}
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H04K3/25 2 {based on characteristics of target signal or of transmission (as countermeasure against surveillance H04K3/827), e.g. using direct sequence spread spectrum or fast frequency hopping (spread spectrum techniques H04B1/69)}
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H04K3/255 3 {based on redundancy of transmitted data, transmission path or transmitting source}
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H04K3/28 2 {with jamming and anti-jamming mechanisms both included in a same device or system, e.g. wherein anti-jamming includes prevention of undesired self-jamming resulting from jamming}
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H04K3/40 1 {Jamming having variable characteristics}
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H04K3/41 2 {characterized by the control of the jamming activation or deactivation time (control of jamming activation and deactivation time only for the purpose of alternating between jamming mode and target monitoring mode H04K3/45)}
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H04K3/415 3 {based on motion status or velocity, e.g. for disabling use of mobile phones in a vehicle}
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H04K3/42 2 {characterized by the control of the jamming frequency or wavelength}
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H04K3/43 2 {characterized by the control of the jamming power, signal-to-noise ratio or geographic coverage area}
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H04K3/44 2 {characterized by the control of the jamming waveform or modulation type}
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H04K3/45 2 {characterized by including monitoring of the target or target signal, e.g. in reactive jammers or follower jammers for example by means of an alternation of jamming phases and monitoring phases, called "look-through mode"}
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H04K3/46 2 {characterized in that the jamming signal is produced by retransmitting a received signal, after delay or processing}
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H04K3/60 1 {Jamming involving special techniques}
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H04K3/62 2 {by exposing communication, processing or storing systems to electromagnetic wave radiation, e.g. causing disturbance, disruption or damage of electronic circuits, or causing external injection of faults in the information}
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H04K3/65 2 {using deceptive jamming or spoofing, e.g. transmission of false signals for premature triggering of RCIED, for forced connection or disconnection to/from a network or for generation of dummy target signal}
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H04K3/68 2 {using passive jamming, e.g. by shielding or reflection (shielding of apparatus or components against electric or magnetic field H05K9/00)}
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H04K3/80 1 {Jamming or countermeasure characterized by its function}
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H04K3/82 2 {related to preventing surveillance, interception or detection}
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H04K3/822 3 {by detecting the presence of a surveillance, interception or detection}
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H04K3/825 3 {by jamming}
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H04K3/827 3 {using characteristics of target signal or of transmission (as countermeasure against jamming H04K3/25), e.g. using direct sequence spread spectrum or fast frequency hopping (spread spectrum techniques H04B1/69)}
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H04K3/84 2 {related to preventing electromagnetic interference in petrol station, hospital, plane or cinema}
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H04K3/86 2 {related to preventing deceptive jamming or unauthorized interrogation or access, e.g. WLAN access or RFID reading (record carriers with integrated circuit chips including means for preventing undesired reading or writing from or to record carriers by hindering electromagnetic reading or writing G06K19/07318; arrangements for sensing record carriers including arrangements for protecting the interrogation against piracy attacks G06K7/10257)}
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H04K3/88 2 {related to allowing or preventing alarm transmission}
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H04K3/90 2 {related to allowing or preventing navigation or positioning, e.g. GPS}
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H04K3/92 2 {related to allowing or preventing remote control}
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H04K3/94 2 {related to allowing or preventing testing or assessing}
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H04K2203/00 0 Jamming of communication; Countermeasures
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H04K2203/10 1 Jamming or countermeasure used for a particular application
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H04K2203/12 2 for acoustic communication
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H04K2203/14 2 for the transfer of light or images, e.g. for video-surveillance, for television or from a computer screen
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H04K2203/16 2 for telephony
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H04K2203/18 2 for wireless local area networks or WLAN
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H04K2203/20 2 for contactless carriers, e.g. RFID carriers (record carriers with integrated circuit chips including means for preventing undesired reading or writing from or to record carriers by hindering electromagnetic reading or writing G06K19/07318; arrangements for sensing record carriers including arrangements for protecting the interrogation against piracy attacks G06K7/10257)
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H04K2203/22 2 for communication related to vehicles
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H04K2203/24 2 for communication related to weapons
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H04K2203/30 1 Jamming or countermeasure characterized by the infrastructure components
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H04K2203/32 2 including a particular configuration of antennas
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H04K2203/34 2 involving multiple cooperating jammers
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H04K2203/36 2 including means for exchanging jamming data between transmitter and receiver, e.g. in forward or backward direction
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H04L TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION (arrangements common to telegraphic and telephonic communication H04M)
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H04L1/00 0 Arrangements for detecting or preventing errors in the information received {(correcting synchronisation H04L7/00)}
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H04L1/0001 1 {Systems modifying transmission characteristics according to link quality, e.g. power backoff (adaptive data allocation for multicarrier modulation H04L5/0044; controlling transmission power for radio systems H04W52/04)}
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H04L1/0002 2 {by adapting the transmission rate}
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H04L1/0003 3 {by switching between different modulation schemes}
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H04L1/0004 4 {applied to control information}
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H04L1/0005 4 {applied to payload information}
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H04L1/0006 2 {by adapting the transmission format}
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H04L1/0007 3 {by modifying the frame length}
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H04L1/0008 4 {by supplementing frame payload, e.g. with padding bits}
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H04L1/0009 2 {by adapting the channel coding (H04L1/1812 takes precedence)}
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H04L1/001 3 {applied to control information}
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H04L1/0011 3 {applied to payload information}
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H04L1/0013 3 {Rate matching, e.g. puncturing or repetition of code symbols}
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H04L1/0014 2 {by adapting the source coding}
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H04L1/0015 2 {characterised by the adaptation strategy}
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H04L1/0016 3 {involving special memory structures, e.g. look-up tables}
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H04L1/0017 3 {where the mode-switching is based on Quality of Service requirement}
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H04L1/0018 4 {based on latency requirement}
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H04L1/0019 3 {in which mode-switching is based on a statistical approach}
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H04L1/002 4 {Algorithms with memory of the previous states, e.g. Markovian models}
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H04L1/0021 4 {in which the algorithm uses adaptive thresholds}
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H04L1/0022 3 {in which mode-switching is influenced by the user}
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H04L1/0023 2 {characterised by the signalling}
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H04L1/0025 3 {Transmission of mode-switching indication}
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H04L1/0026 3 {Transmission of channel quality indication}
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H04L1/0027 3 {Scheduling of signalling, e.g. occurrence thereof}
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H04L1/0028 3 {Formatting}
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H04L1/0029 4 {Reduction of the amount of signalling, e.g. retention of useful signalling or differential signalling (power control H04W52/04)}
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H04L1/003 4 {Adaptive formatting arrangements particular to signalling, e.g. variable amount of bits}
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H04L1/0031 4 {Multiple signaling transmission (H04L1/1664, F15 take precedence)}
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H04L1/0032 3 {Without explicit signalling}
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H04L1/0033 2 {arrangements specific to the transmitter}
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H04L1/0034 3 {where the transmitter decides based on inferences, e.g. use of implicit signalling}
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H04L1/0035 3 {evaluation of received explicit signalling}
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H04L1/0036 2 {arrangements specific to the receiver}
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H04L1/0038 3 {Blind format detection (for detection of modulation format H04L27/0012)}
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H04L1/0039 3 {other detection of signalling, e.g. detection of TFCI explicit signalling (H04L1/0046, H04L27/0012 and H04L25/0262 take precedence)}
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H04L1/004 1 {by using forward error control (H04L1/0618 takes precedence; coding, decoding or code conversion, for error detection or correction H03M13/00)}
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H04L1/0041 2 {Arrangements at the transmitter end}
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H04L1/0042 3 {Encoding specially adapted to other signal generation operation, e.g. in order to reduce transmit distortions, jitter, or to improve signal shape (H04L1/0067 takes precedence)}
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H04L1/0043 3 {Realisations of complexity reduction techniques, e.g. use of look-up tables}
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H04L1/0044 4 {specially adapted for power saving}
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H04L1/0045 2 {Arrangements at the receiver end}
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H04L1/0046 3 {Code rate detection or code type detection (H04L1/0038 takes precedence; detection of the data rate H04L25/0262; for packet format H04L1/0091)}
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H04L1/0047 3 {Decoding adapted to other signal detection operation (in conjunction with sequence estimation or equalization H04L25/03286)}
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H04L1/0048 4 {in conjunction with detection of multiuser or interfering signals, e.g. iteration between CDMA or MIMO detector and FEC decoder (for spatial equalizer H04L25/03286)}
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H04L1/005 4 {Iterative decoding, including iteration between signal detection and decoding operation}
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H04L1/0051 5 {Stopping criteria}
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H04L1/0052 3 {Realisations of complexity reduction techniques, e.g. pipelining or use of look-up tables}
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H04L1/0053 4 {specially adapted for power saving}
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H04L1/0054 3 {Maximum-likelihood or sequential decoding, e.g. Viterbi, Fano, ZJ algorithms}
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H04L1/0055 3 {MAP-decoding}
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H04L1/0056 2 {Systems characterized by the type of code used (H04L1/08 takes precedence)}
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H04L1/0057 3 {Block codes (H04L1/0061, H04L1/0064 take precedence)}
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H04L1/0058 4 {Block-coded modulation}
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H04L1/0059 3 {Convolutional codes}
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H04L1/006 4 {Trellis-coded modulation}
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H04L1/0061 3 {Error detection codes}
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H04L1/0063 4 {Single parity check}
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H04L1/0064 3 {Concatenated codes}
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H04L1/0065 4 {Serial concatenated codes}
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H04L1/0066 4 {Parallel concatenated codes}
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H04L1/0067 3 {Rate matching (H04L1/0013 and H04L1/08 take precedence)}
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H04L1/0068 4 {by puncturing}
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H04L1/0069 5 {Puncturing patterns}
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H04L1/007 3 {Unequal error protection (for format H04L1/0078; for codes per se H03M13/35)}
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H04L1/0071 3 {Use of interleaving (interleaving per se H03M13/27)}
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H04L1/0072 2 {Error control for data other than payload data, e.g. control data}
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H04L1/0073 3 {Special arrangements for feedback channel}
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H04L1/0075 2 {Transmission of coding parameters to receiver (H04L1/0023 takes precedence)}
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H04L1/0076 2 {Distributed coding, e.g. network coding, involving channel coding (coding in both space and time H04L1/0618; cooperative diversity H04B7/022)}
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H04L1/0077 3 {Cooperative coding}
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H04L1/0078 1 {Avoidance of errors by organising the transmitted data in a format specifically designed to deal with errors, e.g. location (forward error control, e.g. FEC, CRC H04L1/004; adaptive formatting H04L1/0006; mappings H04L27/00)}
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H04L1/0079 2 {Formats for control data (H04L1/16 takes precedence; training sequences H04L25/00 and H04L27/00)}
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H04L1/008 3 {where the control data relates to payload of a different packet}
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H04L1/0081 3 {Formats specially adapted to avoid errors in the feedback channel (H04L1/1607 takes precedence)}
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H04L1/0082 3 {fields explicitly indicating existence of error in data being transmitted, e.g. so that downstream stations can avoid decoding erroneous packet; relays}
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H04L1/0083 2 {Formatting with frames or packets; Protocol or part of protocol for error control}
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H04L1/0084 2 {Formats for payload data}
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H04L1/0085 2 {Formatting with cells}
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H04L1/0086 2 {Unequal error protection (H04L27/00 and H04L1/004 take precedence for layer 1/2 aspects, e.g. bit loading)}
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H04L1/0088 3 {in control part}
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H04L1/0089 3 {in payload}
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H04L1/009 2 {arrangements specific to transmitters}
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H04L1/0091 2 {arrangements specific to receivers, e.g. format detection (detection of data rate H04L25/0262; detection of coding rate H04L1/0046)}
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H04L2001/0092 1 {Error control systems characterised by the topology of the transmission link}
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H04L2001/0093 2 {Point-to-multipoint}
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H04L2001/0094 2 {Bus}
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H04L2001/0095 2 {Ring}
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H04L2001/0096 2 {Channel splitting in point-to-point links}
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H04L2001/0097 2 {Relays}
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H04L2001/0098 1 {Unequal error protection}
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H04L1/02 1 by diversity reception
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H04L1/04 2 using frequency diversity
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H04L1/06 2 using space diversity
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H04L1/0606 3 {Space-frequency coding}
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H04L1/0612 3 {Space-time modulation}
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H04L1/0618 3 {Space-time coding}
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H04L1/0625 4 {Transmitter arrangements}
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H04L1/0631 4 {Receiver arrangements}
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H04L1/0637 4 {Properties of the code}
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H04L1/0643 5 {block codes}
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H04L1/065 5 {by means of convolutional encoding}
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H04L1/0656 5 {Cyclotomic systems, e.g. Bell Labs Layered Space-Time [BLAST]}
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H04L1/0662 5 {Limited orthogonality systems}
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H04L1/0668 5 {Orthogonal systems, e.g. using Alamouti codes}
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H04L1/0675 4 {characterised by the signaling}
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H04L1/0681 5 {adapting space time parameters, i.e. modifying the space time matrix}
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H04L1/0687 5 {Full feedback}
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H04L1/0693 5 {Partial feedback, e.g. partial channel state information [CSI]}
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H04L1/08 1 by repeating transmission, e.g. Verdan system {(H04L1/1858 and H04L1/189 take precedence)}
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H04L1/12 1 by using return channel
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H04L2001/125 2 {Arrangements for preventing errors in the return channel}
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H04L1/14 2 in which the signals are sent back to the transmitter to be checked {; echo systems}
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H04L1/16 2 in which the return channel carries supervisory signals, e.g. repetition request signals
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H04L1/1607 3 Details of the supervisory signal
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H04L1/1614 4 {using bitmaps}
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H04L1/1621 4 {Group acknowledgement, i.e. the acknowledgement message defining a range of identifiers, e.g. of sequence numbers}
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H04L1/1628 4 {List acknowledgements, i.e. the acknowledgement message consisting of a list of identifiers, e.g. of sequence numbers (H04L1/1614 takes precedence)}
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H04L1/1635 4 {Cumulative acknowledgement, i.e. the acknowledgement message applying to all previous messages}
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H04L1/1642 4 {Formats specially adapted for sequence numbers}
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H04L1/165 5 {Variable formats}
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H04L1/1657 4 {Implicit acknowledgement of correct or incorrect reception, e.g. with a moving window}
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H04L1/1664 4 {the supervisory signal being transmitted together with payload signals; piggybacking}
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H04L1/1671 4 {the supervisory signal being transmitted together with control information}
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H04L1/1678 5 {where the control information is for timing, e.g. time stamps}
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H04L1/1685 4 {the supervisory signal being transmitted in response to a specific request, e.g. to a polling signal}
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H04L1/1692 4 {Physical properties of the supervisory signal, e.g. acknowledgement by energy bursts}
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H04L1/18 3 Automatic repetition systems, e.g. Van Duuren systems
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H04L1/1803 4 Stop-and-wait protocols
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H04L1/1806 4 Go-back-N protocols
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H04L1/1809 4 Selective-repeat protocols
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H04L1/1812 4 Hybrid protocols; Hybrid automatic repeat request [HARQ]
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H04L1/1816 5 {with retransmission of the same, encoded, message}
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H04L1/1819 5 {with retransmission of additional or different redundancy}
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H04L1/1822 4 involving configuration of automatic repeat request [ARQ] with parallel processes
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H04L1/1825 4 Adaptation of specific ARQ protocol parameters according to transmission conditions
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H04L1/1829 4 Arrangements specially adapted for the receiver end
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H04L1/1832 5 {Details of sliding window management}
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H04L1/1835 5 {Buffer management}
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H04L1/1838 6 {for semi-reliable protocols, e.g. for less sensitive applications such as streaming video (buffer level management for video bitstream receiver H04N21/44004)}
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H04L1/1841 6 {Resequencing}
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H04L1/1845 6 {Combining techniques, e.g. code combining}
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H04L1/1848 5 {Time-out mechanisms}
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H04L1/1851 6 {using multiple timers}
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H04L1/1854 5 {Scheduling and prioritising arrangements}
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H04L1/1858 5 {Transmission or retransmission of more than one copy of acknowledgement message}
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H04L1/1861 5 {Physical mapping arrangements (for ACK signaling see also H04L5/0053)}
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H04L1/1864 5 {ARQ related signaling (H04L1/1607 takes precedence)}
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H04L1/1867 4 Arrangements specially adapted for the transmitter end
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H04L1/187 5 {Details of sliding window management}
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H04L1/1874 5 {Buffer management}
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H04L1/1877 6 {for semi-reliable protocols, e.g. for less sensitive applications like streaming video (buffer level management for video bitstream control arrangements H04N21/44004)}
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H04L1/188 5 {Time-out mechanisms}
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H04L1/1883 6 {using multiple timers}
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H04L1/1887 5 {Scheduling and prioritising arrangements}
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H04L1/189 5 {Transmission or retransmission of more than one copy of a message}
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H04L1/1893 5 {Physical mapping arrangements (physical resource mapping in general H04L5/00)}
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H04L1/1896 5 {ARQ related signaling}
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H04L1/20 1 using signal quality detector
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H04L1/201 2 {Frame classification, e.g. bad, good or erased (frame indication per se H04L1/0082)}
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H04L1/203 2 {Details of error rate determination, e.g. BER, FER or WER}
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H04L1/205 2 {jitter monitoring}
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H04L1/206 2 {for modulated signals}
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H04L1/208 2 {involving signal re-encoding}
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H04L1/22 1 using redundant apparatus to increase reliability
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H04L1/24 1 Testing correct operation
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H04L1/241 2 {using pseudo-errors}
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H04L1/242 2 {by comparing a transmitted test signal with a locally generated replica}
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H04L1/243 3 {at the transmitter, using a loop-back}
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H04L1/244 3 {test sequence generators}
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H04L1/245 2 {by using the properties of transmission codes}
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H04L1/246 3 {two-level transmission codes, e.g. binary}
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H04L1/247 3 {three-level transmission codes, e.g. ternary}
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H04L1/248 2 {Distortion measuring systems (measurement of non-linear distortion G01R23/20; measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time, duration G01R29/02)}
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H04L5/00 0 Arrangements affording multiple use of the transmission path
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H04L5/0001 1 {Arrangements for dividing the transmission path (duplexing H04L5/14; multiplexing of different sources on one path H04J)}
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H04L5/0003 2 {Two-dimensional division (time-code division H04J11/00, H04J13/00; for time-space division H04B7/0413, H04B7/0697)}
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H04L5/0005 3 {Time-frequency}
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H04L5/0007 4 {the frequencies being orthogonal, e.g. OFDM(A), DMT}
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H04L5/0008 5 {Wavelet-division}
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H04L5/001 5 {the frequencies being arranged in component carriers}
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H04L5/0012 5 {Hopping in multicarrier systems (for frequency hopping in spread spectrum systems H04B1/713)}
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H04L5/0014 2 {Three-dimensional division (time-code-space division H04B7/0413, H04B7/0697)}
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H04L5/0016 3 {Time-frequency-code}
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H04L5/0017 4 {in which a distinct code is applied, as a temporal sequence, to each frequency}
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H04L5/0019 4 {in which one code is applied, as a temporal sequence, to all frequencies}
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H04L5/0021 4 {in which codes are applied as a frequency-domain sequences, e.g. MC-CDMA}
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H04L5/0023 3 {Time-frequency-space}
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H04L5/0025 4 {Spatial division following the spatial signature of the channel}
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H04L5/0026 2 {Division using four or more dimensions}
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H04L5/0028 2 {Variable division (signaling therefor H04L5/0092)}
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H04L5/003 1 {Arrangements for allocating sub-channels of the transmission path}
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H04L5/0032 2 {Distributed allocation, i.e. involving a plurality of allocating devices, each making partial allocation}
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H04L5/0033 3 {each allocating device acting autonomously, i.e. without negotiation with other allocating devices}
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H04L5/0035 3 {Resource allocation in a cooperative multipoint environment}
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H04L5/0037 2 {Inter-user or inter-terminal allocation}
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H04L5/0039 3 {Frequency-contiguous, i.e. with no allocation of frequencies for one user or terminal between the frequencies allocated to another}
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H04L5/0041 3 {Frequency-non-contiguous}
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H04L5/0042 2 {intra-user or intra-terminal allocation}
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H04L5/0044 2 {allocation of payload}
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H04L5/0046 3 {Determination of how many bits are transmitted on different sub-channels}
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H04L5/0048 2 {Allocation of pilot signals, i.e. of signals known to the receiver}
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H04L5/005 3 {of common pilots, i.e. pilots destined for multiple users or terminals}
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H04L5/0051 3 {of dedicated pilots, i.e. pilots destined for a single user or terminal}
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H04L5/0053 2 {Allocation of signaling, i.e. of overhead other than pilot signals}
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H04L5/0055 3 {Physical resource allocation for ACK/NACK (for physical mapping arrangements in ARQ protocols H04L1/1861)}
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H04L5/0057 3 {Physical resource allocation for CQI}
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H04L5/0058 2 {Allocation criteria}
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H04L5/006 3 {Quality of the received signal, e.g. BER, SNR, water filling}
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H04L5/0062 3 {Avoidance of ingress interference, e.g. ham radio channels}
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H04L5/0064 3 {Rate requirement of the data, e.g. scalable bandwidth, data priority}
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H04L5/0066 3 {Requirements on out-of-channel emissions}
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H04L5/0067 3 {Allocation algorithms which involve graph matching}
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H04L5/0069 3 {Allocation based on distance or geographical location (allocation based on terminal or device properties in general, H04W72/51)}
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H04L5/0071 3 {Allocation based on fairness other than the proportional kind}
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H04L5/0073 3 {Allocation arrangements that take into account other cell interferences (for intercell interference mitigation or co-ordination in orthogonal multiplex systems H04J11/005)}
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H04L5/0075 3 {Allocation using proportional fairness}
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H04L5/0076 3 {Allocation utility-based}
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H04L5/0078 2 {Timing of allocation}
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H04L5/008 3 {once only, on installation}
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H04L5/0082 3 {at predetermined intervals}
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H04L5/0083 4 {symbol-by-symbol}
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H04L5/0085 3 {when channel conditions change}
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H04L5/0087 3 {when data requirements change}
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H04L5/0089 4 {due to addition or removal of users or terminals}
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H04L5/0091 1 {Signaling for the administration of the divided path}
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H04L5/0092 2 {Indication of how the channel is divided}
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H04L5/0094 2 {Indication of how sub-channels of the path are allocated}
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H04L5/0096 2 {Indication of changes in allocation}
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H04L5/0098 3 {Signalling of the activation or deactivation of component carriers, subcarriers or frequency bands}
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H04L5/02 1 Channels characterised by the type of signal
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H04L5/023 2 {Multiplexing of multicarrier modulation signals (multicarrier modulation H04L27/2601)}
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H04L5/026 3 {using code division}
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H04L5/04 2 the signals being represented by different amplitudes or polarities, e.g. quadriplex
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H04L5/06 2 the signals being represented by different frequencies (combined with time-division multiplexing H04L5/26)
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H04L5/08 3 each combination of signals in different channels being represented by a fixed frequency
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H04L5/10 3 with dynamo-electric generation of carriers; with mechanical filters or demodulators
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H04L5/12 2 the signals being represented by different phase modulations of a single carrier
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H04L5/14 1 Two-way operation using the same type of signal, i.e. duplex
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H04L5/1407 2 {Artificial lines or their setting (for line transmission systems in general H04B3/40)}
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H04L5/1415 2 {using control lines}
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H04L5/1423 2 {for simultaneous baseband signals}
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H04L5/143 2 {for modulated signals (H04L5/1469 takes precedence)}
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H04L5/1438 2 {Negotiation of transmission parameters prior to communication (modified according to link quality H04L1/0001)}
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H04L5/1446 3 {of transmission speed}
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H04L5/1453 3 {of modulation type}
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H04L5/1461 2 {Suppression of signals in the return path, i.e. bidirectional control circuits}
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H04L5/1469 2 {using time-sharing}
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H04L5/1476 3 {operating bitwise}
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H04L5/1484 3 {operating bytewise}
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H04L5/1492 4 {with time compression, e.g. operating according to the ping-pong technique}
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H04L5/16 2 Half-duplex systems; Simplex/duplex switching; Transmission of break signals {non-automatically inverting the direction of transmission}
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H04L5/18 2 Automatic changing of the traffic direction
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H04L5/20 1 using different combinations of lines, e.g. phantom working
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H04L5/22 1 using time-division multiplexing
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H04L5/225 2 {combined with the use of transition coding (transition coding H04L25/493)}
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H04L5/24 2 with start-stop synchronous converters
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H04L5/245 3 {with a number of discharge tubes or semiconductor elements which successively connect the different channels to the transmission channels (see: H04L13/00 - H04L23/00, H03K5/15, H03K17/62, H04J3/047)}
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H04L5/26 2 combined with the use of different frequencies
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H04L7/00 0 Arrangements for synchronising receiver with transmitter {(synchronisation of generators of electric oscillations or pulses H03L7/00)}
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H04L7/0004 1 {Initialisation of the receiver (H04L7/0075 and H04L7/10 take precedence)}
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H04L7/0008 1 {Synchronisation information channels, e.g. clock distribution lines}
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H04L7/0012 2 {by comparing receiver clock with transmitter clock}
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H04L7/0016 1 {correction of synchronization errors}
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H04L7/002 2 {correction by interpolation}
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H04L7/0025 3 {interpolation of clock signal}
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H04L7/0029 3 {interpolation of received data signal}
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H04L7/0033 2 {Correction by delay}
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H04L7/0037 3 {Delay of clock signal}
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H04L7/0041 3 {Delay of data signal}
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H04L7/0045 2 {Correction by a latch cascade}
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H04L7/005 2 {Correction by an elastic buffer}
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H04L7/0054 1 {Detection of the synchronisation error by features other than the received signal transition (by means of signal transition H04L7/033)}
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H04L7/0058 2 {detection of error based on equalizer tap values}
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H04L7/0062 2 {detection of error based on data decision error, e.g. Mueller type detection}
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H04L7/0066 2 {detection of error based on transmission code rule}
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H04L7/007 2 {detection of error based on maximum signal power, e.g. peak value, maximizing autocorrelation}
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H04L7/0075 1 {with photonic or optical means}
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H04L7/0079 1 {Receiver details}
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H04L7/0083 2 {taking measures against momentary loss of synchronisation, e.g. inhibiting the synchronisation, using idle words or using redundant clocks}
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H04L7/0087 2 {Preprocessing of received signal for synchronisation, e.g. by code conversion, pulse generation or edge detection}
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H04L7/0091 1 {Transmitter details}
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H04L7/0095 1 {with mechanical means}
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H04L7/02 1 Speed or phase control by the received code signals, the signals containing no special synchronisation information {(H04L7/0075 takes precedence)}
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H04L7/027 2 extracting the synchronising or clock signal from the received signal spectrum, e.g. by using a resonant or bandpass circuit
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H04L7/0272 3 {with squaring loop}
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H04L7/0274 3 {with Costas loop}
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H04L7/0276 3 {Self-sustaining, e.g. by tuned delay line and a feedback path to a logical gate}
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H04L7/0278 3 {Band edge detection}
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H04L7/033 2 using the transitions of the received signal to control the phase of the synchronising-signal-generating means, e.g. using a phase-locked loop
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H04L7/0331 3 {with a digital phase-locked loop [PLL] processing binary samples, e.g. add/subtract logic for correction of receiver clock (H04L7/0337 takes precedence)}
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H04L7/0332 3 {with an integrator-detector}
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H04L7/0334 3 {Processing of samples having at least three levels, e.g. soft decisions}
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H04L7/0335 4 {Gardner detector}
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H04L7/0337 3 {Selecting between two or more discretely delayed clocks or selecting between two or more discretely delayed received code signals}
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H04L7/0338 4 {the correction of the phase error being performed by a feed forward loop}
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H04L7/04 1 Speed or phase control by synchronisation signals {(H04L7/0075 takes precedence)}
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H04L7/041 2 {using special codes as synchronising signal}
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H04L7/042 3 {Detectors therefor, e.g. correlators, state machines (digital correlators in general G06F17/15)}
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H04L7/043 3 {Pseudo-noise [PN] codes variable during transmission (synchronisation of spread spectrum receivers H04B1/69)}
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H04L7/044 3 {using a single bit, e.g. start stop bit}
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H04L2007/045 3 {Fill bit or bits, idle words}
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H04L7/046 3 {using a dotting sequence}
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H04L2007/047 3 {using a sine signal or unmodulated carrier}
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H04L7/048 2 {using the properties of error detecting or error correcting codes, e.g. parity as synchronisation signal}
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H04L7/06 2 the synchronisation signals differing from the information signals in amplitude, polarity or frequency {or length}
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H04L7/065 3 {and superimposed by modulation}
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H04L7/08 2 the synchronisation signals recurring cyclically
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H04L7/10 2 Arrangements for initial synchronisation
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H04L9/00 0 {Cryptographic mechanisms or cryptographic} arrangements for secret or secure communications; Network security protocols
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H04L9/001 1 {using chaotic signals}
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H04L9/002 1 {Countermeasures against attacks on cryptographic mechanisms (network architectures or network communication protocols for protection against malicious traffic H04L63/1441)}
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H04L9/003 2 {for power analysis, e.g. differential power analysis [DPA] or simple power analysis [SPA]}
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H04L9/004 2 {for fault attacks}
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H04L9/005 2 {for timing attacks}
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H04L9/006 1 {involving public key infrastructure [PKI] trust models (network architecture or network communication protocol for supporting authentication of entities using certificates in a packet data network H04L63/0823)}
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H04L9/007 2 {involving hierarchical structures}
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H04L9/008 1 {involving homomorphic encryption}
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H04L9/06 1 the encryption apparatus using shift registers or memories for block-wise {or stream} coding, e.g. DES systems {or RC4; Hash functions; Pseudorandom sequence generators}
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H04L9/0618 2 {Block ciphers, i.e. encrypting groups of characters of a plain text message using fixed encryption transformation}
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H04L9/0625 3 {with splitting of the data block into left and right halves, e.g. Feistel based algorithms, DES, FEAL, IDEA or KASUMI}
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H04L9/0631 3 {Substitution permutation network [SPN], i.e. cipher composed of a number of stages or rounds each involving linear and nonlinear transformations, e.g. AES algorithms}
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H04L9/0637 3 {Modes of operation, e.g. cipher block chaining [CBC], electronic codebook [ECB] or Galois/counter mode [GCM]}
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H04L9/0643 2 {Hash functions, e.g. MD5, SHA, HMAC or f9 MAC}
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H04L9/065 2 {Encryption by serially and continuously modifying data stream elements, e.g. stream cipher systems, RC4, SEAL or A5/3}
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H04L9/0656 3 {Pseudorandom key sequence combined element-for-element with data sequence, e.g. one-time-pad [OTP] or Vernam's cipher}
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H04L9/0662 4 {with particular pseudorandom sequence generator}
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H04L9/0668 5 {producing a non-linear pseudorandom sequence}
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H04L9/08 1 Key distribution {or management, e.g. generation, sharing or updating, of cryptographic keys or passwords (network architectures or network communication protocols for supporting key management in a packet data network H04L63/06)}
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H04L9/0816 2 {Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use}
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H04L9/0819 3 {Key transport or distribution, i.e. key establishment techniques where one party creates or otherwise obtains a secret value, and securely transfers it to the other(s) (network architectures or network communication protocols for key distribution in a packet data network H04L63/062)}
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H04L9/0822 4 {using key encryption key}
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H04L9/0825 4 {using asymmetric-key encryption or public key infrastructure [PKI], e.g. key signature or public key certificates}
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H04L9/0827 4 {involving distinctive intermediate devices or communication paths (network architectures or network communication protocols using different networks H04L63/18)}
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H04L9/083 4 {involving central third party, e.g. key distribution center [KDC] or trusted third party [TTP]}
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H04L9/0833 5 {involving conference or group key (network architectures or network communication protocols for key management in group communication in a packet data network H04L63/065)}
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H04L9/0836 6 {using tree structure or hierarchical structure}
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H04L9/0838 3 {Key agreement, i.e. key establishment technique in which a shared key is derived by parties as a function of information contributed by, or associated with, each of these (network architectures or network communication protocols for key exchange in a packet data network H04L63/061)}
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H04L9/0841 4 {involving Diffie-Hellman or related key agreement protocols}
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H04L9/0844 5 {with user authentication or key authentication, e.g. ElGamal, MTI, MQV-Menezes-Qu-Vanstone protocol or Diffie-Hellman protocols using implicitly-certified keys}
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H04L9/0847 4 {involving identity based encryption [IBE] schemes}
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H04L9/085 3 {Secret sharing or secret splitting, e.g. threshold schemes}
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H04L9/0852 3 {Quantum cryptography (transmission systems employing electromagnetic waves other than radio waves, e.g. light, infra-red H04B10/00; wavelength-division multiplex systems H04J14/02)}
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H04L9/0855 4 {involving additional nodes, e.g. quantum relays, repeaters, intermediate nodes or remote nodes}
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H04L9/0858 4 {Details about key distillation or coding, e.g. reconciliation, error correction, privacy amplification, polarisation coding or phase coding}
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H04L9/0861 2 {Generation of secret information including derivation or calculation of cryptographic keys or passwords}
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H04L9/0863 3 {involving passwords or one-time passwords (network architectures or network communication protocols for using one-time keys in a packet data network H04L63/067)}
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H04L9/0866 3 {involving user or device identifiers, e.g. serial number, physical or biometrical information, DNA, hand-signature or measurable physical characteristics}
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H04L9/0869 3 {involving random numbers or seeds}
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H04L9/0872 3 {using geo-location information, e.g. location data, time, relative position or proximity to other entities}
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H04L9/0875 3 {based on channel impulse response [CIR]}
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H04L9/0877 3 {using additional device, e.g. trusted platform module [TPM], smartcard, USB or hardware security module [HSM]}
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H04L9/088 2 {Usage controlling of secret information, e.g. techniques for restricting cryptographic keys to pre-authorized uses, different access levels, validity of crypto-period, different key- or password length, or different strong and weak cryptographic algorithms (network architectures or network communication protocols for using time-dependent keys in a packet data network H04L63/068)}
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H04L9/0891 2 {Revocation or update of secret information, e.g. encryption key update or rekeying}
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H04L9/0894 2 {Escrow, recovery or storing of secret information, e.g. secret key escrow or cryptographic key storage}
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H04L9/0897 3 {involving additional devices, e.g. trusted platform module [TPM], smartcard or USB}
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H04L9/10 1 with particular housing, physical features or manual controls
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H04L9/12 1 Transmitting and receiving encryption devices synchronised or initially set up in a particular manner
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H04L9/14 1 using a plurality of keys or algorithms
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H04L9/16 2 the keys or algorithms being changed during operation
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H04L9/30 1 Public key, i.e. encryption algorithm being computationally infeasible to invert or user's encryption keys not requiring secrecy
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H04L9/3006 2 {underlying computational problems or public-key parameters}
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H04L9/3013 3 {involving the discrete logarithm problem, e.g. ElGamal or Diffie-Hellman systems}
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H04L9/302 3 {involving the integer factorization problem, e.g. RSA or quadratic sieve [QS] schemes}
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H04L9/3026 3 {details relating to polynomials generation, e.g. generation of irreducible polynomials}
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H04L9/3033 3 {details relating to pseudo-prime or prime number generation, e.g. primality test}
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H04L9/304 2 {based on error correction codes, e.g. McEliece}
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H04L9/3066 2 {involving algebraic varieties, e.g. elliptic or hyper-elliptic curves}
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H04L9/3073 3 {involving pairings, e.g. identity based encryption [IBE], bilinear mappings or bilinear pairings, e.g. Weil or Tate pairing}
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H04L9/3093 2 {involving Lattices or polynomial equations, e.g. NTRU scheme}
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H04L9/32 1 including means for verifying the identity or authority of a user of the system {or for message authentication, e.g. authorization, entity authentication, data integrity or data verification, non-repudiation, key authentication or verification of credentials}
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H04L9/321 2 {involving a third party or a trusted authority}
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H04L9/3213 3 {using tickets or tokens, e.g. Kerberos (network architectures or network communication protocols for entities authentication using tickets in a packet data network H04L63/0807)}
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H04L9/3215 2 {using a plurality of channels (network architectures or network communication protocols using different networks H04L63/18)}
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H04L9/3218 2 {using proof of knowledge, e.g. Fiat-Shamir, GQ, Schnorr, ornon-interactive zero-knowledge proofs}
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H04L9/3221 3 {interactive zero-knowledge proofs}
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H04L9/3226 2 {using a predetermined code, e.g. password, passphrase or PIN (network architectures or network communication protocols for supporting authentication of entities using passwords in a packet data network H04L63/083)}
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H04L9/3228 3 {One-time or temporary data, i.e. information which is sent for every authentication or authorization, e.g. one-time-password, one-time-token or one-time-key}
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H04L9/3231 3 {Biological data, e.g. fingerprint, voice or retina (network architectures or network communication protocols for supporting authentication of entities using biometrical features in a packet data network H04L63/0861)}
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H04L9/3234 2 {involving additional secure or trusted devices, e.g. TPM, smartcard, USB or software token (network architectures or network communication protocols for supporting authentication of entities using an additional device in a packet data network H04L63/0853)}
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H04L9/3236 2 {using cryptographic hash functions}
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H04L9/3239 3 {involving non-keyed hash functions, e.g. modification detection codes [MDCs], MD5, SHA or RIPEMD}
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H04L9/3242 3 {involving keyed hash functions, e.g. message authentication codes [MACs], CBC-MAC or HMAC}
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H04L9/3247 2 {involving digital signatures}
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H04L9/3249 3 {using RSA or related signature schemes, e.g. Rabin scheme}
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H04L9/3252 3 {using DSA or related signature schemes, e.g. elliptic based signatures, ElGamal or Schnorr schemes}
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H04L9/3255 3 {using group based signatures, e.g. ring or threshold signatures}
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H04L9/3257 3 {using blind signatures}
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H04L9/3263 2 {involving certificates, e.g. public key certificate [PKC] or attribute certificate [AC]; Public key infrastructure [PKI] arrangements (network architectures or network communication protocols for supporting authentication of entities using certificates in a packet data network H04L63/0823)}
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H04L9/3265 3 {using certificate chains, trees or paths; Hierarchical trust model}
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H04L9/3268 3 {using certificate validation, registration, distribution or revocation, e.g. certificate revocation list [CRL]}
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H04L9/3271 2 {using challenge-response}
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H04L9/3273 3 {for mutual authentication (network architectures or network communication protocols for achieving mutual authentication in a packet data network H04L63/0869)}
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H04L9/3278 3 {using physically unclonable functions [PUF]}
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H04L9/3297 2 {involving time stamps, e.g. generation of time stamps}
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H04L9/34 1 Bits, or blocks of bits, of the telegraphic message being interchanged in time {(for speech signals H04K1/06)}
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H04L9/36 1 with means for detecting characters not meant for transmission
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H04L9/38 1 Encryption being effected by mechanical apparatus, e.g. rotating cams, switches, keytape punchers
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H04L9/40 1 Network security protocols
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H04L9/50 1 {using hash chains, e.g. blockchains or hash trees}
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H04L12/00 0 Data switching networks (interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units G06F13/00)
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H04L12/02 1 Details
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H04L12/04 2 Switchboards
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H04L12/06 2 Answer-back mechanisms or circuits
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H04L12/08 2 Allotting numbers to messages; Counting characters, words or messages
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H04L12/10 2 Current supply arrangements
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H04L12/12 2 Arrangements for remote connection or disconnection of substations or of equipment thereof
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H04L12/14 2 Charging {, metering or billing} arrangements {for data wireline or wireless communications}
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H04L12/1403 3 {Architecture for metering, charging or billing}
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H04L12/1407 4 {Policy-and-charging control [PCC] architecture}
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H04L12/141 3 {Indication of costs}
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H04L12/1414 4 {in real-time}
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H04L12/1417 5 {Advice of charge with threshold, e.g. user indicating maximum cost}
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H04L12/1421 4 {Indication of expected costs}
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H04L12/1425 3 {involving dedicated fields in the data packet for billing purposes}
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H04L12/1428 3 {Invoice generation, e.g. customization, lay-out, database processing, algorithms for calculating the bill or formatting invoices as WWW pages (invoicing in general G06Q30/04)}
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H04L12/1432 3 {Metric aspects}
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H04L12/1435 4 {volume-based}
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H04L12/1439 4 {time-based}
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H04L12/1442 3 {at network operator level}
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H04L12/1446 4 {inter-operator billing}
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H04L12/145 4 {trading network capacity or selecting route based on tariff}
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H04L12/1453 3 {Methods or systems for payment or settlement of the charges for data transmission involving significant interaction with the data transmission network}
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H04L12/1457 4 {using an account}
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H04L12/146 4 {using digital cash}
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H04L12/1464 4 {using a card, such as credit card, prepay card or SIM}
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H04L12/1467 4 {involving prepayment}
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H04L12/1471 4 {splitting of costs}
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H04L12/1475 5 {the splitting involving a third party}
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H04L12/1478 5 {the splitting involving only the communication parties}
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H04L12/1482 4 {involving use of telephony infrastructure for billing for the transport of data, e.g. call detail record [CDR] or intelligent network infrastructure}
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H04L12/1485 3 {Tariff-related aspects}
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H04L12/1489 4 {dependent on congestion}
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H04L12/1492 4 {negotiation of tariff}
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H04L12/1496 4 {involving discounts}
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H04L12/16 2 Arrangements for providing special services to substations
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H04L12/18 3 for broadcast or conference {, e.g. multicast}
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H04L12/1804 4 {for stock exchange and similar applications}
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H04L12/1809 4 {for auctioneering devices}
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H04L12/1813 4 {for computer conferences, e.g. chat rooms (instant messaging H04L51/04; protocols for multimedia communication H04L65/1101; arrangements for multi-party communication H04L65/403; telephonic conference arrangements H04M3/56; television conference systems H04N7/15)}
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H04L12/1818 5 {Conference organisation arrangements, e.g. handling schedules, setting up parameters needed by nodes to attend a conference, booking network resources, notifying involved parties}
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H04L12/1822 5 {Conducting the conference, e.g. admission, detection, selection or grouping of participants, correlating users to one or more conference sessions, prioritising transmission}
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H04L12/1827 5 {Network arrangements for conference optimisation or adaptation}
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H04L12/1831 5 {Tracking arrangements for later retrieval, e.g. recording contents, participants activities or behavior, network status}
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H04L12/1836 4 {with heterogeneous network architecture}
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H04L12/184 5 {with heterogeneous receivers, e.g. layered multicast}
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H04L12/1845 4 {broadcast or multicast in a specific location, e.g. geocast (protocols for adapting network applications to user terminal location H04L67/52; services specially adapted for wireless communication networks making use of the location of users or terminals H04W4/02)}
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H04L12/185 4 {with management of multicast group membership}
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H04L12/1854 4 {with non-centralised forwarding system, e.g. chaincast}
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H04L12/1859 4 {adapted to provide push services, e.g. data channels}
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H04L12/1863 4 {comprising mechanisms for improved reliability, e.g. status reports (arrangements for detecting or preventing errors by carrying supervisory signal the return channel H04L1/16)}
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H04L12/1868 5 {Measures taken after transmission, e.g. acknowledgments}
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H04L12/1872 6 {avoiding ACK or NACK implosion}
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H04L12/1877 5 {Measures taken prior to transmission}
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H04L12/1881 4 {with schedule organisation, e.g. priority, sequence management}
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H04L12/1886 4 {with traffic restrictions for efficiency improvement, e.g. involving subnets or subdomains}
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H04L12/189 4 {in combination with wireless systems (selective distribution or broadcast in wireless communication networks H04W4/06)}
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H04L12/1895 4 {for short real-time information, e.g. alarms, notifications, alerts, updates}
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H04L12/22 2 Arrangements for preventing the taking of data from a data transmission channel without authorisation (means for verifying the identity or the authority of a user of a secure or secret communication system H04L9/32)
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H04L12/28 1 characterised by path configuration, e.g. LAN [Local Area Networks] or WAN [Wide Area Networks] (wireless communication networks H04W {; arrangements for dividing the transmission path H04W40/00})
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H04L12/2801 2 {Broadband local area networks}
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H04L12/2803 2 {Home automation networks}
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H04L12/2805 3 {Home Audio Video Interoperability [HAVI] networks}
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H04L12/2807 3 {Exchanging configuration information on appliance services in a home automation network (arrangements for maintenance or administration involving network analysis for automatically determining the actual topology of a network H04L41/12; hardware or software tools for network management using graphical user interfaces H04L41/22; address allocation H04L61/50)}
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H04L12/2809 4 {indicating that an appliance service is present in a home automation network (monitoring functionality H04L43/0817; discovery or management thereof, e.g. service location protocol [SLP] or web services, H04L67/51)}
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H04L12/281 4 {indicating a format for calling an appliance service function in a home automation network (for remote control or remote monitoring of applications H04L67/025)}
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H04L12/2812 4 {describing content present in a home automation network, e.g. audio video content (retrieval from the Internet G06F16/95)}
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H04L12/2814 4 {Exchanging control software or macros for controlling appliance services in a home automation network (arrangements for maintenance or administration involving configuration of the network and network elements H04L41/08)}
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H04L12/2816 3 {Controlling appliance services of a home automation network by calling their functionalities (arrangements in telecontrol or telemetry systems for selectively calling a substation from a main station; in which substation desired apparatus is selected for applying a control signal thereto or for obtaining measured values therefrom H04Q9/00)}
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H04L12/2818 4 {from a device located outside both the home and the home network (access arrangements H04L12/2856; for remote control or remote monitoring of applications H04L67/025; arrangements for transmitting signals characterised by the use of a wireless eletrical link G08C17/00; telephonic communication systems adapted for combination with remote control systems H04M11/007)}
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H04L12/282 4 {based on user interaction within the home (receiver circuitry for displaying additional information being controlled by a remote control apparatus H04N21/42204)}
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H04L12/2821 4 {Avoiding conflicts related to the use of home appliances (cryptographic protocols H04L9/00; protocols for network security H04L63/00)}
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H04L12/2823 3 {Reporting information sensed by appliance or service execution status of appliance services in a home automation network (device-related reporting H04L43/065; arrangements in telecontrol or telemetry systems for selectively calling a substation from a main station, in which substation desired apparatus is selected for applying a control signal thereto or for obtaining measured values therefrom H04Q9/00)}
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H04L12/2825 4 {Reporting to a device located outside the home and the home network (access arrangements H04L12/2856; for remote control or remote monitoring of applications H04L67/025; telephonic communication systems adapted for combination with telemetering systems H04M11/002)}
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H04L12/2827 4 {Reporting to a device within the home network; wherein the reception of the information reported automatically triggers the execution of a home appliance functionality}
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H04L12/2829 5 {involving user profiles according to which the execution of a home appliance functionality is automatically triggered}
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H04L12/283 3 {Processing of data at an internetworking point of a home automation network}
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H04L12/2832 4 {Interconnection of the control functionalities between home networks (single bridge functionality H04L12/4625)}
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H04L12/2834 4 {Switching of information between an external network and a home network (access arrangements H04L12/2856)}
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H04L12/2836 4 {Protocol conversion between an external network and a home network (controlling appliance services of a home automation network from a device located outside the home and the home network H04L12/2818; protocol conversion H04L69/08; adaptation of digital video signals for transport over a specific home network H04N7/24)}
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H04L12/2838 3 {Distribution of signals within a home automation network, e.g. involving splitting/multiplexing signals to/from different paths (adaptations of television systems for transmission by electric cable for domestic distribution H04N7/106; hybrid transport H04L12/6418; home network arrangements specially adapted for distribution of digital video signals H04N7/24)}
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H04L2012/284 3 {characterised by the type of medium used}
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H04L2012/2841 4 {Wireless}
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H04L2012/2843 4 {Mains power line}
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H04L2012/2845 4 {Telephone line}
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H04L2012/2847 3 {characterised by the type of home appliance used}
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H04L2012/2849 4 {Audio/video appliances}
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H04L2012/285 4 {Generic home appliances, e.g. refrigerators}
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H04L12/2852 2 {Metropolitan area networks}
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H04L12/2854 2 {Wide area networks, e.g. public data networks}
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H04L12/2856 3 {Access arrangements, e.g. Internet access (asynchronous transfer mode networks H04L12/5601; broadband local area networks H04L12/2801; optical access or distribution networks H04Q11/0067; access to open networks H04L12/5691; digital subscriber line end-user equipment and bit-level processing of data on a PSTN-based network H04M11/00; home network gateways H04L12/2834; wireless access networks H04W)}
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H04L12/2858 4 {Access network architectures}
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H04L12/2859 5 {Point-to-point connection between the data network and the subscribers (encapsulation H04L12/4633; virtual LANs H04L12/4641; routing of packets H04L45/00)}
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H04L12/2861 5 {Point-to-multipoint connection from the data network to the subscribers}
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H04L12/2863 4 {Arrangements for combining access network resources elements, e.g. channel bonding (modem pooling H04L25/14; routing of packets H04L45/00; multichannel or multilink protocols H04L69/14)}
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H04L12/2865 5 {Logical combinations}
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H04L12/2867 5 {Physical combinations}
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H04L12/2869 4 {Operational details of access network equipments (admission control or resource allocation in access networks H04L12/5692)}
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H04L12/287 5 {Remote access server, e.g. BRAS}
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H04L12/2872 6 {Termination of subscriber connections}
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H04L12/2874 6 {Processing of data for distribution to the subscribers}
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H04L12/2876 6 {Handling of subscriber policies (group policies management H04L41/0893)}
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H04L12/2878 5 {Access multiplexer, e.g. DSLAM (generic distributed time multiplexers, e.g. TDM/TDMA H04J3/1694)}
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H04L12/2879 6 {characterised by the network type on the uplink side, i.e. towards the service provider network}
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H04L12/2881 7 {IP/Ethernet DSLAM}
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H04L12/2883 7 {ATM DSLAM}
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H04L12/2885 7 {Arrangements interfacing with optical systems (optical network equipment H04B10/00; optical multiplexers H04J14/00)}
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H04L12/2887 6 {characterised by the offered subscriber services}
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H04L12/2889 7 {Multiservice, e.g. MSAN}
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H04L12/289 7 {Single service}
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H04L12/2892 6 {characterised by the access multiplexer architecture}
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H04L12/2894 7 {Centralized processing}
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H04L12/2896 7 {Distributed processing, e.g. on line cards}
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H04L12/2898 5 {Subscriber equipments (DSL modems H04M11/062; cable modems H04L12/2801)}
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H04L12/40 2 Bus networks
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H04L12/40006 3 {Architecture of a communication node (current supply arrangements H04L12/10; intermediate storage or scheduling H04L49/90)}
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H04L12/40013 4 {Details regarding a bus controller}
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H04L12/40019 4 {Details regarding a bus master}
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H04L12/40026 4 {Details regarding a bus guardian}
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H04L12/40032 4 {Details regarding a bus interface enhancer}
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H04L12/40039 4 {Details regarding the setting of the power status of a node according to activity on the bus}
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H04L12/40045 4 {Details regarding the feeding of energy to the node from the bus}
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H04L12/40052 3 {High-speed IEEE 1394 serial bus (bus transfer protocol on a daisy chain bus using an embedded synchronisation G06F13/426)}
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H04L12/40058 4 {Isochronous transmission}
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H04L12/40065 4 {Bandwidth and channel allocation (home automation networks H04L12/2803; flow control H04L47/10)}
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H04L12/40071 4 {Packet processing; Packet format (adaptation of digital video signals for transport over a specific network H04N21/2381, H04N21/4363, H04N21/4381; packet switches H04L49/00; intermediate storage or scheduling H04L49/90)}
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H04L12/40078 4 {Bus configuration (home automation networks H04L12/2803; arrangements for maintenance or administration H04L41/00)}
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H04L12/40084 4 {Bus arbitration}
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H04L12/40091 4 {Bus bridging (LAN interconnection over a bridge based backbone H04L12/462; single bridge functionality H04L12/462)}
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H04L12/40097 4 {Interconnection with other networks (LAN interconnection over a bridge based backbone H04L12/462; single bridge functionality H04L12/462)}
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H04L12/40104 4 {Security; Encryption; Content protection (cryptographic protocols H04L9/00; protocols for network security H04L63/00)}
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H04L12/40117 4 {Interconnection of audio or video/imaging devices (home automation networks H04L12/2803; bitstream network arrangements specially adapted for distribution of digital video signals H04N7/24)}
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H04L12/40123 4 {Interconnection of computers and peripherals (printer information exchange with computer G06F3/1293)}
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H04L12/4013 3 {Management of data rate on the bus (systems modifying transmission characteristics according to link quality H04L1/0001)}
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H04L12/40136 4 {Nodes adapting their rate to the physical link properties (LAN switches H04L49/351)}
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H04L12/40143 3 {involving priority mechanisms (hybrid switching fabrics H04L12/6402; intermediate storage or scheduling H04L49/90; time-division multiplex systems H04J3/00)}
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H04L12/4015 4 {by scheduling the transmission of messages at the communication node}
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H04L12/40156 4 {by using dedicated slots associated with a priority level}
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H04L12/40163 4 {by assigning priority to messages according to a message field}
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H04L12/40169 3 {Flexible bus arrangements (arrangements for maintenance or administration involving management of faults; events, alarms H04L41/06; automatic restoration of network faults H04L41/0654)}
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H04L12/40176 4 {involving redundancy (error detection or correction of the data by redundancy in hardware using active fault-masking in interconnections G06F11/2002; error detection or correction of the data by redundancy in hardware using active fault-masking in storage systems using spares or by reconfiguring G06F11/2053)}
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H04L12/40182 5 {by using a plurality of communication lines}
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H04L12/40189 5 {by using a plurality of bus systems}
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H04L12/40195 5 {by using a plurality of nodes}
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H04L12/40202 5 {by using a plurality of master stations}
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H04L2012/40208 3 {characterized by the use of a particular bus standard}
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H04L2012/40215 4 {Controller Area Network CAN}
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H04L2012/40221 4 {Profibus}
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H04L2012/40228 4 {Modbus}
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H04L2012/40234 4 {Local Interconnect Network LIN}
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H04L2012/40241 4 {Flexray}
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H04L2012/40247 4 {LON}
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H04L2012/40254 4 {Actuator Sensor Interface ASI}
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H04L2012/4026 3 {Bus for use in automation systems}
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H04L2012/40267 3 {Bus for use in transportation systems}
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H04L2012/40273 4 {the transportation system being a vehicle}
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H04L2012/4028 4 {the transportation system being an aircraft}
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H04L2012/40286 4 {the transportation system being a waterborne vessel}
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H04L2012/40293 4 {the transportation system being a train}
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H04L12/403 3 with centralised control, e.g. polling
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H04L12/4035 4 {in which slots of a TDMA packet structure are assigned based on a contention resolution carried out at a master unit (TDM/TDMA multiplex systems per se H04J3/1694; hybrid switching systems H04L12/64)}
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H04L12/407 3 with decentralised control
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H04L12/413 4 with random access, e.g. carrier-sense multiple-access with collision detection (CSMA-CD)
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H04L12/4135 5 {using bit-wise arbitration}
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H04L12/417 4 with deterministic access, e.g. token passing
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H04L12/42 2 Loop networks
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H04L2012/421 3 {Interconnected ring systems}
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H04L12/422 3 {Synchronisation for ring networks (Time Division Multiplex ring networks, e.g. SDH/SONET H04J3/085)}
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H04L12/423 3 with centralised control, e.g. polling
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H04L12/427 3 with decentralised control
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H04L12/43 4 with synchronous transmission, e.g. time division multiplex [TDM], slotted rings
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H04L12/433 4 with asynchronous transmission, e.g. token ring, register insertion
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H04L12/437 3 Ring fault isolation or reconfiguration {(for SDH/SONET ring networks H04J3/085)}
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H04L12/44 2 Star or tree networks
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H04L2012/445 3 {with switching in a hub, e.g. ETHERNET switch}
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H04L12/46 2 Interconnection of networks
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H04L12/4604 3 {LAN interconnection over a backbone network, e.g. Internet, Frame Relay}
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H04L12/4608 4 {LAN interconnection over ATM networks}
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H04L12/4612 4 {LAN interconnection over narrowband networks, e.g. N-ISDN, PSTN, X.25}
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H04L12/4616 4 {LAN interconnection over a LAN backbone}
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H04L12/462 4 {LAN interconnection over a bridge based backbone}
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H04L12/4625 5 {Single bridge functionality, e.g. connection of two networks over a single bridge}
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H04L2012/4629 4 {using multilayer switching, e.g. layer 3 switching}
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H04L12/4633 3 {Interconnection of networks using encapsulation techniques, e.g. tunneling}
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H04L12/4637 3 {Interconnected ring systems}
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H04L12/4641 3 {Virtual LANs, VLANs, e.g. virtual private networks [VPN] (LAN interconnection over a bridge based backbone H04L12/462; encapsulation techniques H04L12/4633; routing of packets H04L45/00; packet switches H04L49/00; virtual private networks for security H04L63/0272)}
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H04L12/4645 4 {Details on frame tagging (routing of packets H04L45/00; support for virtual LAN H04L49/354)}
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H04L12/465 5 {wherein a single frame includes a plurality of VLAN tags}
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H04L12/4654 6 {wherein a VLAN tag represents a customer VLAN, e.g. C-Tag}
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H04L12/4658 6 {wherein a VLAN tag represents a service provider backbone VLAN, e.g. B-Tag, S-Tag}
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H04L12/4662 6 {wherein a VLAN tag represents a service instance, e.g. I-SID in PBB}
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H04L12/4666 5 {Operational details on the addition or the stripping of a tag in a frame, e.g. at a provider edge node}
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H04L12/467 4 {Arrangements for supporting untagged frames, e.g. port-based VLANs}
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H04L12/4675 4 {Dynamic sharing of VLAN information amongst network nodes (configuration of the network or of network elements H04L41/08)}
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H04L12/4679 5 {Arrangements for the registration or de-registration of VLAN attribute values, e.g. VLAN identifiers, port VLAN membership}
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H04L12/4683 5 {characterized by the protocol used}
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H04L12/4687 6 {MVRP [multiple VLAN registration protocol]}
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H04L12/4691 6 {GVRP [GARP VLAN registration protocol]}
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H04L12/4695 6 {VTP [VLAN trunking protocol]}
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H04L12/50 1 Circuit switching systems, i.e. systems in which the path is physically permanent during the communication
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H04L12/52 2 using time division techniques (in digital transmission systems H04L5/22)
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H04L12/525 3 {involving a stored program control}
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H04L12/54 1 Store-and-forward switching systems (packet switching systems H04L45/00, H04L47/00)
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H04L12/56 2 {Packet switching systems}
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H04L12/5601 3 {Transfer mode dependent, e.g. ATM}
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H04L12/5602 4 {Bandwidth control in ATM Networks, e.g. leaky bucket}
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H04L2012/5603 4 {Access techniques}
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H04L2012/5604 5 {Medium of transmission, e.g. fibre, cable, radio}
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H04L2012/5605 6 {Fibre}
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H04L2012/5606 6 {Metallic}
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H04L2012/5607 6 {Radio}
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H04L2012/5608 6 {Satellite}
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H04L2012/5609 5 {Topology}
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H04L2012/561 6 {Star, e.g. cross-connect, concentrator, subscriber group equipment, remote electronics}
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H04L2012/5612 6 {Ring}
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H04L2012/5613 6 {Bus (including DQDB)}
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H04L2012/5614 4 {User Network Interface}
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H04L2012/5615 5 {Network termination, e.g. NT1, NT2, PBX}
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H04L2012/5616 5 {Terminal equipment, e.g. codecs, synch.}
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H04L2012/5617 5 {Virtual LANs; Emulation of LANs}
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H04L2012/5618 5 {Bridges, gateways [GW] or interworking units [IWU]}
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H04L2012/5619 4 {Network Node Interface, e.g. tandem connections, transit switching}
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H04L2012/562 5 {Routing}
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H04L2012/5621 5 {Virtual private network [VPN]; Private-network - network-interface (P-NNI)}
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H04L2012/5623 5 {Network design, dimensioning, topology or optimisation}
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H04L2012/5624 5 {Path aspects, e.g. path bundling}
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H04L2012/5625 4 {Operations, administration and maintenance [OAM]}
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H04L2012/5626 5 {Network management, e.g. Intelligent nets}
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H04L2012/5627 5 {Fault tolerance and recovery}
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H04L2012/5628 4 {Testing}
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H04L2012/5629 4 {Admission control}
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H04L2012/563 5 {Signalling, e.g. protocols, reference model}
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H04L2012/5631 5 {Resource management and allocation}
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H04L2012/5632 6 {Bandwidth allocation}
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H04L2012/5634 7 {In-call negotiation}
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H04L2012/5635 7 {Backpressure, e.g. for ABR}
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H04L2012/5636 6 {Monitoring or policing, e.g. compliance with allocated rate, corrective actions}
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H04L2012/5637 7 {Leaky Buckets}
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H04L2012/5638 4 {Services, e.g. multimedia, GOS, QOS}
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H04L2012/5639 5 {Tariffs or charging}
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H04L2012/564 5 {Connection-oriented}
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H04L2012/5641 6 {Unicast/point-to-point}
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H04L2012/5642 6 {Multicast/broadcast/point-multipoint, e.g. VOD}
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H04L2012/5643 6 {Concast/multipoint-to-point}
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H04L2012/5645 5 {Connectionless}
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H04L2012/5646 5 {Cell characteristics, e.g. loss, delay, jitter, sequence integrity}
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H04L2012/5647 6 {Cell loss}
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H04L2012/5648 7 {Packet discarding, e.g. EPD, PTD}
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H04L2012/5649 6 {Cell delay or jitter}
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H04L2012/565 6 {Sequence integrity}
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H04L2012/5651 6 {Priority, marking, classes}
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H04L2012/5652 6 {Cell construction, e.g. including header, packetisation, depacketisation, assembly, reassembly}
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H04L2012/5653 7 {using the ATM adaptation layer [AAL]}
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H04L2012/5654 8 {using the AAL1}
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H04L2012/5656 8 {using the AAL2}
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H04L2012/5657 8 {using the AAL3/4}
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H04L2012/5658 8 {using the AAL5}
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H04L2012/5659 8 {usint the AALX}
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H04L2012/566 7 {using the ATM layer}
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H04L2012/5661 8 {Minicells}
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H04L2012/5662 8 {Macrocells or frames}
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H04L2012/5663 5 {Support of N-ISDN}
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H04L2012/5664 5 {Support of Video, e.g. MPEG}
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H04L2012/5665 5 {Interaction of ATM with other protocols}
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H04L2012/5667 6 {IP over ATM}
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H04L2012/5668 6 {Next hop resolution protocol [NHRP]}
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H04L2012/5669 6 {Multiprotocol over ATM [MPOA]}
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H04L2012/567 6 {Frame Relay over ATM}
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H04L2012/5671 5 {Support of voice}
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H04L2012/5672 4 {Multiplexing, e.g. coding, scrambling}
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H04L2012/5673 5 {Coding or scrambling}
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H04L2012/5674 5 {Synchronisation, timing recovery or alignment}
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H04L2012/5675 5 {Timeslot assignment, e.g. TDMA}
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H04L2012/5676 5 {Code Division Multiple Access [CDMA]}
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H04L2012/5678 4 {Traffic aspects, e.g. arbitration, load balancing, smoothing, buffer management}
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H04L2012/5679 5 {Arbitration or scheduling}
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H04L2012/568 5 {Load balancing, smoothing or shaping}
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H04L2012/5681 5 {Buffer or queue management}
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H04L2012/5682 6 {Threshold; Watermark}
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H04L2012/5683 6 {for avoiding head of line blocking}
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H04L2012/5684 5 {Characteristics of traffic flows}
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H04L2012/5685 4 {Addressing issues}
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H04L2012/5686 4 {Use of neural networks}
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H04L2012/5687 4 {Security aspects}
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H04L12/5691 3 {Access to open networks; Ingress point selection, e.g. ISP selection}
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H04L12/5692 4 {Selection among different networks}
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H04L12/64 1 Hybrid switching systems
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H04L12/6402 2 {Hybrid switching fabrics}
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H04L2012/6405 3 {Space}
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H04L2012/6408 3 {Shared Medium, e.g. memory, bus, ring}
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H04L2012/641 3 {Time switching}
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H04L2012/6413 3 {Switch peripheries}
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H04L2012/6416 3 {Switch multicast}
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H04L12/6418 2 {Hybrid transport}
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H04L2012/6421 3 {Medium of transmission, e.g. fibre, cable, radio, satellite}
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H04L2012/6424 3 {Access arrangements}
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H04L2012/6427 4 {Subscriber Access Module; Concentrator; Group equipment}
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H04L2012/6429 3 {Terminal adapters}
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H04L2012/6432 3 {Topology}
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H04L2012/6435 4 {Bus}
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H04L2012/6437 4 {Ring}
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H04L2012/644 4 {Star}
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H04L2012/6443 3 {Network Node Interface, e.g. Routing, Path finding}
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H04L2012/6445 3 {Admission control}
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H04L2012/6448 4 {Medium Access Control [MAC]}
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H04L2012/6451 5 {Deterministic, e.g. Token, DQDB}
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H04L2012/6454 5 {Random, e.g. Ethernet}
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H04L2012/6456 4 {Channel and bandwidth allocation}
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H04L2012/6459 4 {Multiplexing, e.g. TDMA, CDMA}
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H04L2012/6462 4 {Movable boundaries in packets or frames}
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H04L2012/6464 3 {Priority}
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H04L2012/6467 3 {Information loss recovery, e.g. error correction, prediction}
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H04L2012/647 3 {Frame Relay, X.25}
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H04L2012/6472 3 {Internet}
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H04L2012/6475 3 {N-ISDN, Public Switched Telephone Network [PSTN]}
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H04L2012/6478 3 {Digital subscriber line, e.g. DSL, ADSL, HDSL, XDSL, VDSL}
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H04L2012/6481 3 {Speech, voice}
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H04L2012/6483 3 {Video, e.g. MPEG}
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H04L2012/6486 3 {Signalling Protocols}
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H04L2012/6489 3 {Buffer Management, Threshold setting, Scheduling, Shaping}
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H04L2012/6491 3 {Echo cancellation}
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H04L2012/6494 3 {Silence suppression}
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H04L2012/6497 3 {Feedback to the source}
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H04L12/66 1 Arrangements for connecting between networks having differing types of switching systems, e.g. gateways
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H04L13/00 0 Details of the apparatus or circuits covered by groups H04L15/00 or H04L17/00
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H04L13/02 1 Details not particular to receiver or transmitter
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H04L13/04 2 Driving mechanisms; Clutches
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H04L13/06 2 Tape or page guiding or feeding devices
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H04L13/08 2 Intermediate storage means
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H04L13/10 2 Distributors
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H04L13/12 3 Non-mechanical distributors, e.g. relay distributors
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H04L13/14 4 Electronic distributors
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H04L13/16 1 of transmitters, e.g. code-bars, code-discs
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H04L13/18 1 of receivers
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H04L13/182 2 {Printing mechanisms}
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H04L13/184 3 {Photographic printing and recording}
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H04L13/186 2 {Page printing; tabulating}
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H04L13/188 2 {Projection of the printed matter}
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H04L15/00 0 Apparatus or local circuits for transmitting or receiving dot-and-dash codes, e.g. Morse code (teaching apparatus therefor G09B; telegraph tapping keys H01H21/86)
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H04L15/03 1 Keys structurally combined with sound generators
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H04L15/04 1 Apparatus or circuits at the transmitting end
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H04L15/06 2 with a restricted number of keys, e.g. separate key for each type of code element
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H04L15/08 3 with a single key which transmits dots in one position and dashes in a second position
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H04L15/10 3 combined with perforating apparatus
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H04L15/12 2 with keyboard co-operating with code-bars
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H04L15/14 3 combined with perforating apparatus
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H04L15/16 2 with keyboard co-operating with code discs
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H04L15/18 2 Automatic transmitters, e.g. controlled by perforated tape
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H04L15/20 3 with optical sensing means
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H04L15/22 2 Apparatus or circuits for sending one or a restricted number of signals, e.g. distress signals
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H04L15/24 1 Apparatus or circuits at the receiving end
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H04L15/26 2 operating only on reception of predetermined code signals, e.g. distress signals, party-line call signals
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H04L15/28 2 Code reproducing apparatus
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H04L15/285 3 {Telegraph sounders; Apparatus for acoustic reception}
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H04L15/30 3 Writing recorders
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H04L15/32 3 Perforating recorders
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H04L15/34 2 Apparatus for recording received coded signals after translation, e.g. as type-characters
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H04L17/00 0 Apparatus or local circuits for transmitting or receiving codes wherein each character is represented by the same number of equal-length code elements, e.g. Baudot code
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H04L17/02 1 Apparatus or circuits at the transmitting end
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H04L17/04 2 with keyboard co-operating with code-bars
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H04L17/06 3 Contact operating means
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H04L17/08 3 combined with perforating apparatus
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H04L17/10 2 with keyboard co-operating with code-discs
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H04L17/12 2 Automatic transmitters, e.g. controlled by perforated tape
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H04L17/14 3 with optical sensing means
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H04L17/16 1 Apparatus or circuits at the receiving end
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H04L17/18 2 Code selection mechanisms
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H04L17/20 2 using perforating recorders
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H04L17/22 2 using mechanical translation and type-bar printing
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H04L17/24 2 using mechanical translation and type-head printing, e.g. type-wheel, type-cylinder
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H04L17/26 2 using aggregate motion translation
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H04L17/28 2 using pneumatic or hydraulic translation
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H04L17/30 2 using electric or electronic translation
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H04L19/00 0 Apparatus or local circuits for step-by-step systems
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H04L21/00 0 Apparatus or local circuits for mosaic printer telegraph systems
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H04L21/02 1 at the transmitting end
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H04L21/04 1 at the receiving end
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H04L23/00 0 Apparatus or local circuits for systems other than those covered by groups H04L15/00 - H04L21/00
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H04L23/02 1 adapted for orthogonal signalling
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H04L25/00 0 Baseband systems
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H04L25/02 1 Details {; arrangements for supplying electrical power along data transmission lines (systems for transmitting signals via power distribution lines H04B3/54)}
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H04L25/0202 2 {Channel estimation}
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H04L25/0204 3 {of multiple channels}
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H04L25/0206 4 {of each channel individually}
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H04L25/0208 4 {of the composite channel}
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H04L25/021 3 {Estimation of channel covariance}
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H04L25/0212 3 {of impulse response}
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H04L25/0214 4 {of a single coefficient}
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H04L25/0216 4 {with estimation of channel length}
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H04L25/0218 4 {with detection of nulls}
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H04L25/022 3 {of frequency response}
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H04L25/0222 3 {Estimation of channel variability, e.g. coherence bandwidth, coherence time, fading frequency}
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H04L25/0224 3 {using sounding signals}
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H04L25/0226 4 {sounding signals per se}
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H04L25/0228 4 {with direct estimation from sounding signals}
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H04L25/023 5 {with extension to other symbols}
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H04L25/0232 6 {by interpolation between sounding signals}
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H04L25/0234 7 {by non-linear interpolation}
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H04L25/0236 6 {using estimation of the other symbols}
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H04L25/0238 3 {using blind estimation}
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H04L25/024 3 {channel estimation algorithms}
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H04L25/0242 4 {using matrix methods}
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H04L25/0244 5 {with inversion}
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H04L25/0246 5 {with factorisation}
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H04L25/0248 5 {Eigen-space methods}
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H04L25/025 4 {using least-mean-square [LMS] method}
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H04L25/0252 4 {using third or higher order statistics}
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H04L25/0254 4 {using neural network algorithms}
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H04L25/0256 4 {Channel estimation using minimum mean square error criteria}
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H04L25/0258 4 {Channel estimation using zero-forcing criteria}
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H04L25/026 2 {Arrangements for coupling transmitters, receivers or transceivers to transmission lines; Line drivers (duplexing arrangements H04L5/14)}
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H04L25/0262 2 {Arrangements for detecting the data rate of an incoming signal}
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H04L25/0264 2 {Arrangements for coupling to transmission lines (duplexing arrangements H04L5/14; line equalisers, line build-out devices H04L25/03878)}
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H04L25/0266 3 {Arrangements for providing Galvanic isolation, e.g. by means of magnetic or capacitive coupling}
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H04L25/0268 4 {with modulation and subsequent demodulation}
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H04L25/027 4 {specifically for telegraph signals (induction coil interrupters H01H51/34 dynamo-electric generators H02K)}
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H04L25/0272 3 {Arrangements for coupling to multiple lines, e.g. for differential transmission}
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H04L25/0274 4 {Arrangements for ensuring balanced coupling}
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H04L25/0276 4 {Arrangements for coupling common mode signals}
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H04L25/0278 3 {Arrangements for impedance matching}
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H04L25/028 3 {Arrangements specific to the transmitter end}
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H04L25/0282 4 {Provision for current-mode coupling}
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H04L25/0284 4 {Arrangements to ensure DC-balance}
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H04L25/0286 4 {Provision of wave shaping within the driver (wave shaping per se H04L25/03834)}
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H04L25/0288 5 {the shape being matched to the transmission line (pre-equalisation per se H04L25/03343)}
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H04L25/029 4 {Provision of high-impedance states}
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H04L25/0292 3 {Arrangements specific to the receiver end}
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H04L25/0294 4 {Provision for current-mode coupling}
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H04L25/0296 4 {Arrangements to ensure DC-balance}
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H04L25/0298 3 {Arrangement for terminating transmission lines}
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H04L25/03 2 Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
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H04L25/03006 3 {Arrangements for removing intersymbol interference}
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H04L25/03012 4 {operating in the time domain (H04L25/03165, H04L25/03178 take precedence)}
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H04L25/03019 5 {adaptive, i.e. capable of adjustment during data reception}
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H04L25/03025 6 {using a two-tap delay line}
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H04L25/03031 6 {using only passive components (H04L25/03025 takes precedence)}
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H04L25/03038 6 {with a non-recursive structure (H04L25/03031 takes precedence)}
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H04L25/03044 7 {using fractionally spaced delay lines or combinations of fractionally integrally spaced taps}
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H04L25/0305 7 {using blind adaptation}
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H04L25/03057 6 {with a recursive structure (H04L25/03031 takes precedence)}
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H04L25/03063 7 {using fractionally spaced delay lines or combinations of fractionally and integrally spaced taps}
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H04L25/0307 7 {using blind adaptation}
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H04L25/03076 7 {not using decision feedback}
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H04L25/03082 6 {Theoretical aspects of adaptive time domain methods}
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H04L25/03089 7 {Theory of blind algorithms, recursive or not}
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H04L25/03095 7 {Theory of fractional equalisers, recursive or not}
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H04L25/03101 7 {Theory of the Kalman algorithm}
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H04L25/03108 7 {Theory of recursive equalisers, other than Kalman}
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H04L25/03114 5 {non-adaptive, i.e. not adjustable, manually adjustable, or adjustable only during the reception of special signals}
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H04L25/03121 6 {using a two-tap delay line}
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H04L25/03127 6 {using only passive components (H04L25/03121 takes precedence)}
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H04L25/03133 6 {with a non-recursive structure (H04L25/03127 takes precedence)}
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H04L25/0314 7 {using fractionally spaced delay lines or combinations of fractionally integrally spaced taps}
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H04L25/03146 6 {with a recursive structure (H04L25/03127 takes precedence)}
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H04L25/03152 6 {Theoretical aspects of non-adaptive time domain methods}
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H04L25/03159 4 {operating in the frequency domain (H04L25/03165, H04L25/03178 take precedence)}
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H04L25/03165 4 {using neural networks}
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H04L25/03171 4 {Arrangements involving maximum a posteriori probability [MAP] detection}
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H04L25/03178 4 {Arrangements involving sequence estimation techniques}
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H04L25/03184 5 {Details concerning the metric}
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H04L25/03191 6 {in which the receiver makes a selection between different metrics}
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H04L25/03197 6 {methods of calculation involving metrics}
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H04L25/03203 5 {Trellis search techniques}
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H04L25/0321 6 {Sorting arrangements therefor}
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H04L25/03216 6 {using the M-algorithm}
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H04L25/03222 6 {using the T-algorithm}
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H04L25/03229 6 {with state-reduction using grouping of states}
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H04L25/03235 6 {with state-reduction using feedback filtering}
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H04L25/03242 6 {Methods involving sphere decoding}
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H04L25/03248 5 {Arrangements for operating in conjunction with other apparatus}
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H04L25/03254 6 {Operation with other circuitry for removing intersymbol interference}
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H04L25/03261 7 {with impulse-response shortening filters}
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H04L25/03267 7 {with decision feedback equalisers}
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H04L25/03273 6 {with carrier recovery circuitry}
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H04L25/0328 6 {with interference cancellation circuitry (adaptations for interference cancellation within a sequence estimator H04L25/03305; interference related aspects of direct sequence spread spectrum H04B1/7097; interference related aspects of frequency hopping spread spectrum H04B1/715; see also H04B1/10)}
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H04L25/03286 6 {with channel-decoding circuitry}
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H04L25/03292 6 {with channel estimation circuitry}
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H04L25/03299 6 {with noise-whitening circuitry}
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H04L25/03305 5 {Joint sequence estimation and interference removal (joint detection of several desired signals H04L25/03331)}
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H04L25/03312 5 {Arrangements specific to the provision of output signals}
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H04L25/03318 6 {Provision of soft decisions}
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H04L25/03324 6 {Provision of tentative decisions}
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H04L25/03331 5 {Arrangements for the joint estimation of multiple sequences}
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H04L25/03337 5 {Arrangements involving per-survivor processing}
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H04L25/03343 4 {Arrangements at the transmitter end}
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H04L2025/0335 4 {characterised by the type of transmission}
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H04L2025/03356 5 {Baseband transmission}
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H04L2025/03363 6 {Multilevel (H04L2025/03369 takes precedence)}
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H04L2025/03369 6 {Partial response}
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H04L2025/03375 5 {Passband transmission}
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H04L2025/03382 6 {Single of vestigal sideband}
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H04L2025/03388 6 {ASK}
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H04L2025/03394 6 {FSK}
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H04L2025/03401 6 {PSK}
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H04L2025/03407 7 {Continuous phase}
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H04L2025/03414 6 {Multicarrier}
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H04L2025/0342 6 {QAM}
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H04L2025/03426 5 {transmission using multiple-input and multiple-output channels}
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H04L2025/03433 4 {characterised by equaliser structure}
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H04L2025/03439 5 {Fixed structures}
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H04L2025/03445 6 {Time domain}
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H04L2025/03452 7 {Systolic arrays}
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H04L2025/03458 7 {Lattice}
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H04L2025/03464 7 {Neural networks}
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H04L2025/03471 7 {Tapped delay lines (H04L2025/03464 takes precedence)}
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H04L2025/03477 8 {not time-recursive}
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H04L2025/03484 8 {time-recursive}
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H04L2025/0349 9 {as a feedback filter}
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H04L2025/03496 9 {as a prediction filter}
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H04L2025/03503 9 {as a combination of feedback and prediction filters}
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H04L2025/03509 8 {fractionally spaced (H04L2025/03515 takes precedence)}
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H04L2025/03515 8 {irregularly spaced}
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H04L2025/03522 6 {Frequency domain}
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H04L2025/03528 6 {Other transform domain}
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H04L2025/03535 5 {Variable structures}
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H04L2025/03541 6 {Switching between domains, e.g. between time and frequency}
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H04L2025/03547 6 {Switching between time domain structures}
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H04L2025/03554 7 {between neural networks and tapped delay lines}
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H04L2025/0356 7 {Switching the time direction of equalisation}
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H04L2025/03566 7 {between different tapped delay line structures}
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H04L2025/03573 8 {between recursive and non-recursive}
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H04L2025/03579 8 {Modifying the tap spacing}
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H04L2025/03585 8 {Modifying the length}
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H04L2025/03592 4 {Adaptation methods}
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H04L2025/03598 5 {Algorithms}
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H04L2025/03605 6 {Block algorithms}
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H04L2025/03611 6 {Iterative algorithms}
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H04L2025/03617 7 {Time recursive algorithms (H04L2025/03643 takes precedence)}
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H04L2025/03624 8 {Zero-forcing}
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H04L2025/0363 8 {Feature restoration, e.g. constant modulus}
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H04L2025/03636 7 {Algorithms using least mean square [LMS]}
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H04L2025/03643 7 {Order recursive}
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H04L2025/03649 7 {Algorithms using recursive least square [RLS]}
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H04L2025/03656 7 {Initialisation}
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H04L2025/03662 8 {to a fixed value}
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H04L2025/03668 8 {to the value at the end of a previous adaptation period}
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H04L2025/03675 6 {Blind algorithms using gradient methods}
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H04L2025/03681 6 {Control of adaptation}
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H04L2025/03687 7 {of step size}
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H04L2025/03694 8 {Stop and go}
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H04L2025/037 7 {Detection of convergence state}
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H04L2025/03707 7 {Detection or avoidance of local extrema}
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H04L2025/03713 6 {Subspace algorithms}
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H04L2025/03719 6 {Super-exponential}
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H04L2025/03726 5 {Switching between algorithms}
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H04L2025/03732 6 {according to the convergence state}
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H04L2025/03738 5 {Manual adaptation}
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H04L2025/03745 5 {Timing of adaptation}
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H04L2025/03751 6 {only once, at installation (H04L2025/03738 takes precedence)}
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H04L2025/03757 6 {only on the request of a user}
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H04L2025/03764 6 {only during predefined intervals}
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H04L2025/0377 7 {during the reception of training signals}
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H04L2025/03777 4 {characterised by the signalling}
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H04L2025/03783 5 {Details of reference signals}
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H04L2025/03789 6 {Codes therefore}
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H04L2025/03796 6 {Location of reference signals}
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H04L2025/03802 5 {Signalling on the reverse channel}
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H04L2025/03808 6 {Transmission of equaliser coefficients}
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H04L2025/03815 6 {Transmission of a training request}
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H04L25/03821 4 {Inter-carrier interference cancellation [ICI]}
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H04L25/03828 3 {Arrangements for spectral shaping; Arrangements for providing signals with specified spectral properties (partial response systems H04L25/497)}
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H04L25/03834 4 {using pulse shaping}
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H04L25/0384 5 {Design of pulse shapes (pulse shape for impulse radio H04B1/7172)}
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H04L25/03847 5 {Shaping by selective switching of amplifying elements}
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H04L25/03853 5 {Shaping by digital methods other than look up tables or up/down converters}
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H04L25/03859 5 {shaping using look up tables for partial waveforms}
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H04L25/03866 4 {using scrambling}
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H04L25/03872 5 {Parallel scrambling or descrambling}
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H04L25/03878 3 {Line equalisers; line build-out devices}
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H04L25/03885 4 {adaptive}
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H04L25/03891 3 {Spatial equalizers (MIMO diversity systems H04B7/0413)}
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H04L25/03898 4 {codebook-based design (selection of codebook or precoding matrix for MIMO diversity systems H04B7/0456)}
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H04L25/03904 5 {cooperative design, e.g. exchanging of codebook information between base stations}
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H04L25/0391 5 {construction details of matrices}
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H04L25/03917 6 {according to the size of the codebook}
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H04L25/03923 6 {according to the rank}
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H04L25/03929 5 {with layer mapping, e.g. codeword-to layer design (for space-time coding H04L1/0618)}
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H04L25/03936 5 {multi-resolution codebooks}
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H04L25/03942 5 {switching between different codebooks}
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H04L25/03949 4 {equalizer selection or adaptation based on feedback (multiple signaling inclusive of a precoding command for adapting the transmitter H04L1/0031; feedback for transmit diversity systems H04B7/0619; selection of codebook or precoding matrix for MIMO diversity systems H04B7/0456)}
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H04L25/03955 5 {in combination with downlink estimations, e.g. downlink path losses}
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H04L25/03961 4 {design criteria}
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H04L25/03968 5 {mean-square error [MSE]}
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H04L25/03974 5 {throughput maximization}
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H04L25/0398 3 {Restoration of channel reciprocity}
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H04L25/03987 3 {Equalisation for sparse channels}
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H04L25/03993 3 {Noise whitening}
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H04L25/05 2 Electric or magnetic storage of signals before transmitting or retransmitting for changing the transmission rate
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H04L25/06 2 Dc level restoring means; Bias distortion correction {; Decision circuits providing symbol by symbol detection}
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H04L25/061 3 {providing hard decisions only; arrangements for tracking or suppressing unwanted low frequency components, e.g. removal of dc offset (removal of dc offset in coupling arrangements H04L25/029, H04L25/0296)}
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H04L25/062 4 {Setting decision thresholds using feedforward techniques only}
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H04L25/063 4 {Setting decision thresholds using feedback techniques only}
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H04L25/064 5 {Subtraction of the threshold from the signal, which is then compared to a supplementary fixed threshold}
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H04L25/065 4 {Binary decisions}
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H04L25/066 4 {Multilevel decisions, not including self-organising maps}
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H04L25/067 3 {providing soft decisions, i.e. decisions together with an estimate of reliability (H04L25/068 and H04L25/069 take precedence; sequence estimation techniques H04L25/03178)}
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H04L25/068 3 {by sampling faster than the nominal bit rate}
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H04L25/069 3 {by detecting edges or zero crossings}
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H04L25/08 2 Modifications for reducing interference; Modifications for reducing effects due to line faults {; Receiver end arrangements for detecting or overcoming line faults}
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H04L25/085 3 {Arrangements for reducing interference in line transmission systems, e.g. by differential transmission}
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H04L25/10 2 Compensating for variations in line balance
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H04L25/12 2 Compensating for variations in line impedance
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H04L25/14 2 Channel dividing arrangements {, i.e. in which a single bit stream is divided between several baseband channels and reassembled at the receiver}
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H04L25/20 2 Repeater circuits; Relay circuits
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H04L25/202 3 {using mechanical devices (H04L25/205 takes precedence)}
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H04L25/205 3 {using tuning forks or vibrating reeds}
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H04L25/207 3 {using electromagnetic switches}
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H04L25/22 3 Repeaters for converting two wires to four wires; Repeaters for converting single current to double current
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H04L25/24 3 Relay circuits using discharge tubes or semiconductor devices {(H04L25/22 takes precedence)}
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H04L25/242 4 {with retiming}
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H04L25/245 5 {for start-stop signals (detection of start or stop bits H04J3/0602)}
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H04L25/247 5 {for synchronous signals}
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H04L25/26 3 Circuits with optical sensing means {, i.e. using opto-couplers for isolation}
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H04L25/38 1 Synchronous or start-stop systems, e.g. for Baudot code
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H04L25/40 2 Transmitting circuits; Receiving circuits {(repeater circuits, relay circuits H04L25/20)}
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H04L25/42 3 using mechanical distributors
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H04L25/44 3 using relay distributors
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H04L25/45 3 using electronic distributors
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H04L25/46 3 using tuning forks or vibrating reeds
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H04L25/49 3 using code conversion at the transmitter; using predistortion; using insertion of idle bits for obtaining a desired frequency spectrum; using three or more amplitude levels {; Baseband coding techniques specific to data transmission systems (spectral shaping H04L25/03828)}
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H04L25/4902 4 {Pulse width modulation; Pulse position modulation}
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H04L25/4904 4 {using self-synchronising codes, e.g. split-phase codes}
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H04L25/4906 4 {using binary codes}
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H04L25/4908 5 {using mBnB codes}
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H04L25/491 6 {using 1B2B codes}
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H04L25/4912 7 {using CMI or 2-HDB-3 code}
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H04L25/4915 5 {using pattern inversion or substitution (H04L25/4908 takes precedence)}
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H04L25/4917 4 {using multilevel codes}
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H04L25/4919 5 {using balanced multilevel codes (H04L25/4927 takes precedence)}
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H04L25/4921 6 {using quadrature encoding, e.g. carrierless amplitude-phase coding}
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H04L25/4923 5 {using ternary codes (H04L25/4927 takes precedence)}
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H04L25/4925 6 {using balanced bipolar ternary codes}
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H04L25/4927 5 {using levels matched to the quantisation levels of the channel}
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H04L25/493 4 by transition coding, i.e. the time-position or direction of a transition being encoded before transmission
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H04L25/497 4 by correlative coding, e.g. partial response coding or echo modulation coding {transmitters and receivers for partial response systems (transversal equalizers at the transmitter end H04L25/03343)}
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H04L25/4975 5 {Correlative coding using Tomlinson precoding, Harashima precoding, Trellis precoding or GPRS}
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H04L27/00 0 Modulated-carrier systems
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H04L27/0002 1 {analog front ends; means for connecting modulators, demodulators or transceivers to a transmission line (duplex arrangements H04L5/143)}
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H04L27/0004 1 {using wavelets}
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H04L27/0006 1 {Assessment of spectral gaps suitable for allocating digitally modulated signals, e.g. for carrier allocation in cognitive radio (for spectrum sharing between different networks H04W16/14)}
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H04L27/0008 1 {arrangements for allowing a transmitter or receiver to use more than one type of modulation (negotiating modulation type for two-way transmission paths H04L5/1453)}
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H04L27/001 1 {using chaotic signals (for secret or secure communication H04L9/001)}
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H04L27/0012 1 {arrangements for identifying the type of modulation}
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H04L27/0014 1 {Carrier regulation (of chaotic carriers H04L27/001; for multicarrier receivers H04L27/2657)}
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H04L2027/0016 2 {Stabilisation of local oscillators}
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H04L2027/0018 2 {Arrangements at the transmitter end}
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H04L2027/002 3 {using feedback from a remote receiver}
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H04L2027/0022 3 {using the carrier of the associated receiver of a transceiver}
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H04L2027/0024 2 {at the receiver end}
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H04L2027/0026 3 {Correction of carrier offset}
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H04L2027/0028 4 {at passband only}
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H04L2027/003 4 {at baseband only}
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H04L2027/0032 4 {at baseband and passband}
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H04L2027/0034 4 {using hypothesis testing}
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H04L2027/0036 4 {using a recovered symbol clock}
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H04L2027/0038 4 {using an equaliser}
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H04L2027/004 5 {the equaliser providing control signals}
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H04L2027/0042 5 {the equaliser providing the offset correction per se}
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H04L2027/0044 2 {Control loops for carrier regulation}
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H04L2027/0046 3 {Open loops}
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H04L2027/0048 4 {Frequency multiplication}
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H04L2027/0051 4 {Harmonic tracking}
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H04L2027/0053 3 {Closed loops}
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H04L2027/0055 4 {single phase}
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H04L2027/0057 4 {quadrature phase}
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H04L2027/0059 4 {more than two phases}
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H04L2027/0061 4 {remodulation}
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H04L2027/0063 3 {Elements of loops}
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H04L2027/0065 4 {Frequency error detectors (H04L2027/0067 takes precedence)}
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H04L2027/0067 4 {Phase error detectors}
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H04L2027/0069 4 {Loop filters}
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H04L2027/0071 3 {Control of loops}
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H04L2027/0073 4 {Detection of synchronisation state}
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H04L2027/0075 4 {Error weighting}
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H04L2027/0077 5 {stop and go}
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H04L2027/0079 4 {Switching between loops}
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H04L2027/0081 5 {between loops of different bandwidths}
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H04L2027/0083 2 {Signalling arrangements}
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H04L2027/0085 3 {with no special signals for synchronisation}
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H04L2027/0087 3 {Out-of-band signals, (e.g. pilots)}
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H04L2027/0089 3 {In-band signals}
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H04L2027/0091 4 {Continuous signals}
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H04L2027/0093 4 {Intermittant signals}
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H04L2027/0095 5 {in a preamble or similar structure}
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H04L2027/0097 3 {Adaptive synchronisation signals}
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H04L27/01 1 Equalisers {(baseband equalizers at the transmitter end H04L25/03343; in analogue transmission systems H04B3/04, H04B7/005)}
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H04L27/02 1 Amplitude-modulated carrier systems, e.g. using on-off keying; Single sideband or vestigial sideband modulation (H04L27/32 takes precedence)
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H04L27/04 2 Modulator circuits; Transmitter circuits
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H04L27/06 2 Demodulator circuits; Receiver circuits
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H04L27/063 3 {Superheterodyne receivers}
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H04L27/066 3 {Carrier recovery circuits (H04L27/2271 takes precedence)}
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H04L27/08 2 Amplitude regulation arrangements
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H04L27/10 1 Frequency-modulated carrier systems, i.e. using frequency-shift keying (H04L27/32 takes precedence)
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H04L27/103 2 {Chirp modulation (for spread spectrum techniques H04B1/69)}
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H04L27/106 2 {M-ary FSK}
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H04L27/12 2 Modulator circuits; Transmitter circuits
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H04L27/122 3 {using digital generation of carrier signals (digital function generators G06F1/02, H04L17/10; generating pulses having stepped portions using digital techniques H03K4/026)}
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H04L27/125 3 {using a controlled oscillator in an open loop}
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H04L27/127 3 {using a controlled oscillator in a feedback loop}
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H04L27/14 2 Demodulator circuits; Receiver circuits
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H04L27/142 3 {Compensating direct current components occurring during the demodulation and which are caused by mistuning}
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H04L27/144 3 with demodulation using spectral properties of the received signal, e.g. by using frequency selective- or frequency sensitive elements
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H04L27/148 4 using filters, including PLL-type filters
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H04L27/152 4 using controlled oscillators, e.g. PLL arrangements
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H04L27/1525 5 {using quadrature demodulation}
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H04L27/156 3 with demodulation using temporal properties of the received signal, e.g. detecting pulse width
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H04L27/1563 4 {using transition or level detection}
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H04L27/1566 4 {using synchronous sampling}
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H04L27/16 2 Frequency regulation arrangements
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H04L27/18 1 Phase-modulated carrier systems, i.e. using phase-shift keying (H04L27/32 takes precedence)
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H04L27/183 2 {Multiresolution systems}
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H04L27/186 2 {in which the information is carried by both the individual signal points and the subset to which the individual signal points belong, e.g. coset coding or related schemes}
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H04L27/20 2 Modulator circuits; Transmitter circuits
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H04L27/2003 3 {for continuous phase modulation (frequency shift keying H04L27/10)}
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H04L27/2007 4 {in which the phase change within each symbol period is constrained (coset coding H04L27/186)}
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H04L27/201 5 {in which the allowed phase changes vary with time, e.g. multi-h modulation}
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H04L27/2014 5 {in which the phase changes in a piecewise linear manner during each symbol period, e.g. minimum shift keying, fast frequency shift keying (H04L27/201 takes precedence)}
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H04L27/2017 5 {in which the phase changes are non-linear, e.g. generalized and Gaussian minimum shift keying, tamed frequency modulation (H04L27/201 takes precedence)}
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H04L27/2021 4 {in which the phase change per symbol period is not constrained}
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H04L27/2025 5 {in which the phase changes in a piecewise linear manner within each symbol period}
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H04L27/2028 5 {in which the phase changes are non-linear}
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H04L27/2032 3 {for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner}
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H04L27/2035 4 {using a single or unspecified number of carriers}
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H04L27/2039 5 {using microwave technology}
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H04L27/2042 5 {with more than two phase states}
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H04L27/2046 6 {in which the data are represented by carrier phase}
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H04L27/205 6 {in which the data are represented by the change in phase of the carrier}
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H04L27/2053 4 {using more than one carrier, e.g. carriers with different phases}
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H04L27/2057 5 {with a separate carrier for each phase state}
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H04L27/206 5 {using a pair of orthogonal carriers, e.g. quadrature carriers}
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H04L27/2064 6 {using microwave technology}
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H04L27/2067 6 {with more than two phase states (H04L27/2064 takes precedence)}
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H04L27/2071 7 {in which the data are represented by the carrier phase, e.g. systems with differential coding}
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H04L27/2075 7 {in which the data are represented by the change in carrier phase}
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H04L27/2078 7 {in which the phase change per symbol period is constrained (coset coding H04L27/186)}
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H04L27/2082 8 {for offset or staggered quadrature phase shift keying}
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H04L27/2085 7 {with more than one phase shift per symbol period}
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H04L27/2089 7 {with unbalanced quadrature channels}
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H04L27/2092 4 {with digital generation of the modulated carrier (does not include the modulation of a digitally generated carrier)}
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H04L27/2096 3 {Arrangements for directly or externally modulating an optical carrier (optical modulation H04B10/503)}
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H04L27/22 2 Demodulator circuits; Receiver circuits
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H04L27/223 3 {Demodulation in the optical domain (optical demodulation H04B10/676)}
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H04L27/227 3 using coherent demodulation
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H04L27/2271 4 {wherein the carrier recovery circuit uses only the demodulated signals}
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H04L27/2272 5 {using phase locked loops (H04L27/2273 takes precedence)}
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H04L27/2273 5 {associated with quadrature demodulation, e.g. Costas loop}
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H04L27/2275 4 {wherein the carrier recovery circuit uses the received modulated signals}
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H04L27/2276 5 {using frequency multiplication or harmonic tracking}
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H04L27/2277 5 {using remodulation}
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H04L27/2278 5 {using correlation techniques, e.g. for spread spectrum signals}
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H04L27/233 3 using non-coherent demodulation
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H04L27/2331 4 {wherein the received signal is demodulated using one or more delayed versions of itself}
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H04L27/2332 4 {using a non-coherent carrier}
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H04L27/2334 4 {using filters}
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H04L27/2335 4 {using temporal properties of the received signal}
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H04L27/2337 5 {using digital techniques to measure the time between zero-crossings}
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H04L27/2338 4 {using sampling (H04L27/2331 - H04L27/2335 take precedence)}
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H04L27/24 2 Half-wave signalling systems
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H04L27/26 1 Systems using multi-frequency codes (H04L27/32 takes precedence)
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H04L27/2601 2 {Multicarrier modulation systems}
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H04L27/2602 3 {Signal structure}
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H04L27/26025 4 {Numerology, i.e. varying one or more of symbol duration, subcarrier spacing, Fourier transform size, sampling rate or down-clocking (allocating sub-channels of the transmission path H04L5/003)}
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H04L27/2603 4 {Signal structure ensuring backward compatibility with legacy system}
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H04L27/26035 4 {Maintenance of orthogonality, e.g. for signals exchanged between cells or users, or by using covering codes or sequences (using different training sequence per antenna H04B7/0684; code allocation H04J13/16)}
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H04L27/2604 4 {Multiresolution systems (by means of multiresolution subcarriers H04L27/183, H04L27/3488)}
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H04L27/2605 4 {Symbol extensions, e.g. Zero Tail, Unique Word [UW]}
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H04L27/2607 5 {Cyclic extensions}
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H04L27/2608 4 {Allocation of payload}
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H04L27/261 4 {Details of reference signals}
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H04L27/2611 5 {Distribution thereof}
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H04L27/2613 5 {Structure of the reference signals}
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H04L27/26132 6 {using repetition}
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H04L27/26134 6 {Pilot insertion in the transmitter chain, e.g. pilot overlapping with data, insertion in time or frequency domain}
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H04L27/26136 6 {Pilot sequence conveying additional information}
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H04L27/2614 3 {Peak power aspects}
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H04L27/2615 4 {Reduction thereof using coding}
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H04L27/2617 5 {using block codes}
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H04L27/2618 4 {Reduction thereof using auxiliary subcarriers}
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H04L27/262 4 {Reduction thereof by selection of pilot symbols}
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H04L27/2621 4 {Reduction thereof using phase offsets between subcarriers}
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H04L27/2623 4 {Reduction thereof by clipping}
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H04L27/2624 5 {by soft clipping}
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H04L27/2626 3 {Arrangements specific to the transmitter only}
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H04L27/26265 4 {Arrangements for sidelobes suppression specially adapted to multicarrier systems, e.g. spectral precoding}
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H04L27/2627 4 {Modulators}
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H04L27/2628 5 {Inverse Fourier transform modulators, e.g. inverse fast Fourier transform [IFFT] or inverse discrete Fourier transform [IDFT] modulators (H04L27/2634 takes precedence)}
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H04L27/263 6 {modification of IFFT/IDFT modulator for performance improvement}
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H04L27/2631 6 {with polyphase implementation}
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H04L27/2633 6 {using partial FFTs}
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H04L27/2634 5 {Inverse fast Fourier transform [IFFT] or inverse discrete Fourier transform [IDFT] modulators in combination with other circuits for modulation}
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H04L27/2636 6 {with FFT or DFT modulators, e.g. standard single-carrier frequency-division multiple access [SC-FDMA] transmitter or DFT spread orthogonal frequency division multiplexing [DFT-SOFDM]}
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H04L27/26362 6 {Subcarrier weighting equivalent to time domain filtering, e.g. weighting per subcarrier multiplication (arrangements for removing intersymbol interference at the transmitter end H04L25/03343)}
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H04L27/2637 5 {with direct modulation of individual subcarriers}
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H04L27/2639 5 {Modulators using other transforms, e.g. discrete cosine transforms, Orthogonal Time Frequency and Space [OTFS] or hermetic transforms}
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H04L27/264 5 {Pulse-shaped multi-carrier, i.e. not using rectangular window}
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H04L27/26412 6 {Filtering over the entire frequency band, e.g. filtered orthogonal frequency-division multiplexing [OFDM]}
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H04L27/26414 6 {Filtering per subband or per resource block, e.g. universal filtered multicarrier [UFMC] or generalized frequency division multiplexing [GFDM]}
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H04L27/26416 6 {Filtering per subcarrier, e.g. filterbank multicarrier [FBMC]}
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H04L27/2642 5 {Wavelet transform modulators (wavelet-division H04L5/0008)}
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H04L27/2643 5 {using symbol repetition, e.g. time domain realization of distributed FDMA}
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H04L27/2644 5 {with oversampling}
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H04L27/2646 4 {using feedback from receiver for adjusting OFDM transmission parameters, e.g. transmission timing or guard interval length}
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H04L27/2647 3 {Arrangements specific to the receiver only (equalisation H04L27/01)}
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H04L27/2649 4 {Demodulators}
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H04L27/265 5 {Fourier transform demodulators, e.g. fast Fourier transform [FFT] or discrete Fourier transform [DFT] demodulators (H04L27/26524 takes precedence)}
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H04L27/2651 6 {Modification of fast Fourier transform [FFT] or discrete Fourier transform [DFT] demodulators for performance improvement}
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H04L27/2652 6 {with polyphase implementation}
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H04L27/26522 6 {using partial FFTs}
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H04L27/26524 5 {Fast Fourier transform [FFT] or discrete Fourier transform [DFT] demodulators in combination with other circuits for demodulation}
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H04L27/26526 6 {with inverse FFT [IFFT] or inverse DFT [IDFT] demodulators, e.g. standard single-carrier frequency-division multiple access [SC-FDMA] receiver or DFT spread orthogonal frequency division multiplexing [DFT-SOFDM]}
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H04L27/2653 5 {with direct demodulation of individual subcarriers}
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H04L27/26532 5 {Demodulators using other transforms, e.g. discrete cosine transforms, Orthogonal Time Frequency and Space [OTFS] or hermetic transforms}
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H04L27/26534 5 {Pulse-shaped multi-carrier, i.e. not using rectangular window}
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H04L27/26536 6 {Filtering over the entire frequency band, e.g. filtered orthogonal frequency division multiplexing [OFDM]}
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H04L27/26538 6 {Filtering per subband or per resource block, e.g. universal filtered multicarrier [UFMC] or generalized frequency division multiplexing [GFDM]}
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H04L27/2654 6 {Filtering per subcarrier, e.g. filterbank multicarrier [FBMC]}
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H04L27/26542 5 {Wavelet transform demodulators (wavelet-division H04L5/0008)}
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H04L27/26544 5 {Demodulators for signals generated by symbol repetition (synchronisation arrangements H04L27/2655)}
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H04L27/26546 5 {with oversampling}
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H04L27/2655 4 {Synchronisation arrangements}
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H04L27/2656 5 {Frame synchronisation, e.g. packet synchronisation, time division duplex [TDD] switching point detection or subframe synchronisation}
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H04L27/2657 5 {Carrier synchronisation}
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H04L27/2659 6 {Coarse or integer frequency offset determination and synchronisation}
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H04L27/266 6 {Fine or fractional frequency offset determination and synchronisation}
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H04L27/2662 5 {Symbol synchronisation}
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H04L27/2663 6 {Coarse synchronisation, e.g. by correlation}
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H04L27/2665 6 {Fine synchronisation, e.g. by positioning the FFT window}
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H04L27/2666 5 {Acquisition of further OFDM parameters, e.g. bandwidth, subcarrier spacing, or guard interval length}
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H04L27/2668 5 {Details of algorithms}
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H04L27/2669 6 {characterised by the domain of operation}
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H04L27/2671 7 {Time domain}
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H04L27/2672 7 {Frequency domain}
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H04L27/2673 6 {characterised by synchronisation parameters}
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H04L27/2675 7 {Pilot or known symbols}
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H04L27/2676 7 {Blind, i.e. without using known symbols}
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H04L27/2678 8 {using cyclostationarities, e.g. cyclic prefix or postfix}
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H04L27/2679 8 {Decision-aided}
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H04L27/2681 6 {characterised by constraints}
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H04L27/2682 7 {Precision}
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H04L27/2684 7 {Complexity}
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H04L27/2685 7 {Speed of convergence}
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H04L27/2686 7 {Range of frequencies or delays tested}
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H04L27/2688 7 {Resistance to perturbation, e.g. noise, interference or fading}
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H04L27/26885 7 {Adaptation to rapid radio propagation changes, e.g. due to velocity}
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H04L27/2689 5 {Link with other circuits, i.e. special connections between synchronisation arrangements and other circuits for achieving synchronisation}
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H04L27/2691 6 {involving interference determination or cancellation}
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H04L27/2692 6 {with preamble design, i.e. with negotiation of the synchronisation sequence with transmitter or sequence linked to the algorithm used at the receiver}
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H04L27/2694 7 {adaptive design}
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H04L27/2695 6 {with channel estimation, e.g. determination of delay spread, derivative or peak tracking (channel estimation H04L25/0202)}
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H04L27/2697 3 {in combination with other modulation techniques}
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H04L27/2698 4 {double density OFDM/OQAM system, e.g. OFDM/OQAM-IOTA system}
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H04L27/28 2 with simultaneous transmission of different frequencies each representing one code element
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H04L27/30 2 wherein each code element is represented by a combination of frequencies
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H04L27/32 1 Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
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H04L27/34 2 Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
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H04L27/3405 3 {Modifications of the signal space to increase the efficiency of transmission, e.g. reduction of the bit error rate, bandwidth, or average power}
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H04L27/3411 4 {reducing the peak to average power ratio or the mean power of the constellation; Arrangements for increasing the shape gain of a signal set}
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H04L27/3416 4 {in which the information is carried by both the individual signal points and the subset to which the individual points belong, e.g. using coset coding, lattice coding, or related schemes}
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H04L27/3422 5 {in which the constellation is not the n - fold Cartesian product of a single underlying two-dimensional constellation}
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H04L27/3427 5 {in which the constellation is the n - fold Cartesian product of a single underlying two-dimensional constellation}
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H04L27/3433 6 {using an underlying square constellation}
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H04L27/3438 6 {using an underlying generalised cross constellation}
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H04L27/3444 4 {by applying a certain rotation to regular constellations}
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H04L27/345 3 {Modifications of the signal space to allow the transmission of additional information}
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H04L27/3455 4 {in order to facilitate carrier recovery at the receiver end, e.g. by transmitting a pilot or by using additional signal points to allow the detection of rotations}
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H04L27/3461 4 {in order to transmit a subchannel}
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H04L27/3466 5 {by providing an alternative to one signal point}
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H04L27/3472 5 {by switching between alternative constellations}
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H04L27/3477 5 {by using the outer points of the constellation or of the constituent two-dimensional constellations}
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H04L27/3483 5 {using a modulation of the constellation points}
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H04L27/3488 3 {Multiresolution systems}
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H04L27/3494 3 {using non - square modulating pulses, e.g. using raised cosine pulses; Partial response QAM, i.e. with partial response pulse shaping (QAM over partial response channels H04L25/497)}
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H04L27/36 3 Modulator circuits; Transmitter circuits
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H04L27/361 4 {Modulation using a single or unspecified number of carriers, e.g. with separate stages of phase and amplitude modulation}
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H04L27/362 4 {Modulation using more than one carrier, e.g. with quadrature carriers, separately amplitude modulated (H04L27/366 takes precedence)}
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H04L27/363 5 {using non - square modulating pulses, modulators specifically designed for this (transmission of non - square QAM H04L27/3494)}
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H04L27/364 5 {Arrangements for overcoming imperfections in the modulator, e.g. quadrature error or unbalanced I and Q levels}
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H04L27/365 4 {Modulation using digital generation of the modulated carrier (not including modulation of a digitally generated carrier)}
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H04L27/366 4 {Arrangements for compensating undesirable properties of the transmission path between the modulator and the demodulator}
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H04L27/367 5 {using predistortion}
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H04L27/368 6 {adaptive predistortion}
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H04L27/38 3 Demodulator circuits; Receiver circuits
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H04L27/3809 4 {Amplitude regulation arrangements}
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H04L27/3818 4 {using coherent demodulation, i.e. using one or more nominally phase synchronous carriers (H04L27/227 and H04L27/389 take precedence)}
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H04L27/3827 5 {in which the carrier is recovered using only the demodulated baseband signals}
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H04L27/3836 5 {in which the carrier is recovered using the received modulated signal or the received IF signal, e.g. by detecting a pilot or by frequency multiplication}
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H04L27/3845 4 {using non - coherent demodulation, i.e. not using a phase synchronous carrier}
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H04L27/3854 5 {using a non - coherent carrier, including systems with baseband correction for phase or frequency offset}
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H04L27/3863 6 {Compensation for quadrature error in the received signal}
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H04L27/3872 6 {Compensation for phase rotation in the demodulated signal}
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H04L27/3881 5 {using sampling and digital processing, not including digital systems which imitate heterodyne or homodyne demodulation}
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H04L27/389 4 {with separate demodulation for the phase and amplitude components}
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H04L41/00 0 Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
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H04L41/02 1 Standardisation; Integration
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H04L41/0213 2 Standardised network management protocols, e.g. simple network management protocol [SNMP]
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H04L41/022 2 Multivendor or multi-standard integration
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H04L41/0226 2 Mapping or translating multiple network management protocols
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H04L41/0233 2 Object-oriented techniques, for representation of network management data, e.g. common object request broker architecture [CORBA]
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H04L41/024 2 {using relational databases for representation of network management data, e.g. managing via structured query language [SQL]}
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H04L41/0246 2 Exchanging or transporting network management information using the Internet; Embedding network management web servers in network elements; Web-services-based protocols
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H04L41/0253 3 using browsers or web-pages for accessing management information
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H04L41/026 3 using e-messaging for transporting management information, e.g. email, instant messaging or chat
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H04L41/0266 3 using meta-data, objects or commands for formatting management information, e.g. using eXtensible markup language [XML]
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H04L41/0273 3 using web services for network management, e.g. simple object access protocol [SOAP]
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H04L41/028 4 {for synchronisation between service call and response}
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H04L41/0286 4 {for search or classification or discovery of web services providing management functionalities}
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H04L41/0293 4 {for accessing web services by means of a binding identification of the management service or element}
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H04L41/04 1 Network management architectures or arrangements
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H04L41/042 2 comprising distributed management centres cooperatively managing the network
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H04L41/044 2 comprising hierarchical management structures
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H04L41/045 2 comprising client-server management architectures
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H04L41/046 2 comprising network management agents or mobile agents therefor
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H04L41/048 3 {mobile agents}
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H04L41/052 2 using standardised network management architectures, e.g. telecommunication management network [TMN] or unified network management architecture [UNMA]
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H04L41/06 1 Management of faults, events, alarms or notifications
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H04L41/0604 2 using filtering, e.g. reduction of information by using priority, element types, position or time
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H04L41/0609 3 {based on severity or priority}
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H04L41/0613 3 {based on the type or category of the network elements}
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H04L41/0618 3 {based on the physical or logical position}
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H04L41/0622 3 {based on time}
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H04L41/0627 3 {by acting on the notification or alarm source}
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H04L41/0631 2 using root cause analysis; using analysis of correlation between notifications, alarms or events based on decision criteria, e.g. hierarchy, tree or time analysis
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H04L41/0636 3 {based on a decision tree analysis}
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H04L41/064 3 {involving time analysis}
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H04L41/0645 3 {by additionally acting on or stimulating the network after receiving notifications}
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H04L41/065 3 {involving logical or physical relationship, e.g. grouping and hierarchies}
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H04L41/0654 2 using network fault recovery (ring fault isolation or reconfiguration in loop networks without recovery actions by a network management system H04L12/437)
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H04L41/0659 3 by isolating or reconfiguring faulty entities
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H04L41/0663 3 Performing the actions predefined by failover planning, e.g. switching to standby network elements
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H04L41/0668 3 by dynamic selection of recovery network elements, e.g. replacement by the most appropriate element after failure
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H04L41/0672 3 {by re-configuring the faulty entity}
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H04L41/0677 2 Localisation of faults
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H04L41/0681 2 Configuration of triggering conditions
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H04L41/0686 2 Additional information in the notification, e.g. enhancement of specific meta-data
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H04L41/069 2 using logs of notifications; Post-processing of notifications
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H04L41/0695 2 the faulty arrangement being the maintenance, administration or management system
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H04L41/08 1 Configuration management of networks or network elements (address allocation H04L61/50)
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H04L41/0803 2 Configuration setting
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H04L41/0806 3 for initial configuration or provisioning, e.g. plug-and-play
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H04L41/0809 4 {Plug-and-play configuration}
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H04L41/0813 3 characterised by the conditions triggering a change of settings
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H04L41/0816 4 the condition being an adaptation, e.g. in response to network events
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H04L41/082 4 the condition being updates or upgrades of network functionality
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H04L41/0823 3 characterised by the purposes of a change of settings, e.g. optimising configuration for enhancing reliability (for optimising operational conditions of wireless networks H04W24/02)
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H04L41/0826 4 for reduction of network costs (H04L41/0833 takes precedence)
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H04L41/083 4 for increasing network speed
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H04L41/0833 4 for reduction of network energy consumption
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H04L41/0836 4 {to enhance reliability, e.g. reduce downtime}
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H04L41/084 3 Configuration by using pre-existing information, e.g. using templates or copying from other elements
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H04L41/0843 4 {based on generic templates}
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H04L41/0846 4 {based on copy from other elements}
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H04L41/085 2 Retrieval of network configuration; Tracking network configuration history
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H04L41/0853 3 by actively collecting configuration information or by backing up configuration information
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H04L41/0856 4 {by backing up or archiving configuration information}
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H04L41/0859 3 by keeping history of different configuration generations or by rolling back to previous configuration versions
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H04L41/0863 4 {by rolling back to previous configuration versions}
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H04L41/0866 2 Checking the configuration
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H04L41/0869 3 Validating the configuration within one network element
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H04L41/0873 3 Checking configuration conflicts between network elements
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H04L41/0876 2 {Aspects of the degree of configuration automation}
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H04L41/0879 3 {Manual configuration through operator}
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H04L41/0883 3 {Semiautomatic configuration, e.g. proposals from system}
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H04L41/0886 3 {Fully automatic configuration}
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H04L41/0889 2 {Techniques to speed-up the configuration process}
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H04L41/0893 2 Assignment of logical groups to network elements
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H04L41/0894 2 Policy-based network configuration management
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H04L41/0895 2 Configuration of virtualised networks or elements, e.g. virtualised network function or OpenFlow elements
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H04L41/0896 2 Bandwidth or capacity management, i.e. automatically increasing or decreasing capacities (flow or congestion control using dynamic resource allocation, e.g. in-call renegotiation, H04L47/76)
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H04L41/0897 3 by horizontal or vertical scaling of resources, or by migrating entities, e.g. virtual resources or entities
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H04L41/12 1 Discovery or management of network topologies
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H04L41/122 2 of virtualised topologies, e.g. software-defined networks [SDN] or network function virtualisation [NFV]
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H04L41/14 1 Network analysis or design
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H04L41/142 2 using statistical or mathematical methods
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H04L41/145 2 {involving simulating, designing, planning or modelling of a network}
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H04L41/147 2 for predicting network behaviour
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H04L41/149 2 for prediction of maintenance
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H04L41/16 1 using machine learning or artificial intelligence
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H04L41/18 1 Delegation of network management function, e.g. customer network management [CNM]
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H04L41/20 1 {Network management software packages}
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H04L41/22 1 comprising specially adapted graphical user interfaces [GUI]
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H04L41/24 1 {using dedicated network management hardware}
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H04L41/26 1 {using dedicated tools for LAN [Local Area Network] management}
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H04L41/28 1 Restricting access to network management systems or functions, e.g. using authorisation function to access network configuration
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H04L41/30 1 {Decision processes by autonomous network management units using voting and bidding}
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H04L41/32 1 {Specific management aspects for broadband networks}
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H04L41/34 1 Signalling channels for network management communication
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H04L41/342 2 between virtual entities, e.g. orchestrators, SDN or NFV entities
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H04L41/344 2 Out-of-band transfers
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H04L41/40 1 using virtualisation of network functions or resources, e.g. SDN or NFV entities
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H04L41/50 1 Network service management, e.g. ensuring proper service fulfilment according to agreements
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H04L41/5003 2 Managing SLA; Interaction between SLA and QoS
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H04L41/5006 3 Creating or negotiating SLA contracts, guarantees or penalties
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H04L41/5009 3 Determining service level performance parameters or violations of service level contracts, e.g. violations of agreed response time or mean time between failures [MTBF]
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H04L41/5012 4 {determining service availability, e.g. which services are available at a certain point in time}
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H04L41/5016 5 {based on statistics of service availability, e.g. in percentage or over a given time}
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H04L41/5019 3 Ensuring fulfilment of SLA
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H04L41/5022 4 by giving priorities, e.g. assigning classes of service
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H04L41/5025 4 by proactively reacting to service quality change, e.g. by reconfiguration after service quality degradation or upgrade
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H04L41/5029 2 {Service quality level-based billing, e.g. dependent on measured service level customer is charged more or less}
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H04L41/5032 2 {Generating service level reports}
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H04L41/5041 2 characterised by the time relationship between creation and deployment of a service
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H04L41/5045 3 {Making service definitions prior to deployment}
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H04L41/5048 3 {Automatic or semi-automatic definitions, e.g. definition templates}
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H04L41/5051 3 Service on demand, e.g. definition and deployment of services in real time
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H04L41/5054 3 Automatic deployment of services triggered by the service manager, e.g. service implementation by automatic configuration of network components
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H04L41/5058 2 {Service discovery by the service manager}
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H04L41/5061 2 characterised by the interaction between service providers and their network customers, e.g. customer relationship management
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H04L41/5064 3 {Customer relationship management}
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H04L41/5067 3 Customer-centric QoS measurements
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H04L41/507 3 Filtering out customers affected by service problems
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H04L41/5074 3 Handling of user complaints or trouble tickets
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H04L41/5077 2 {wherein the managed service relates to simple transport services, i.e. providing only network infrastructure}
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H04L41/508 2 {based on type of value added network service under agreement}
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H04L41/5083 3 {wherein the managed service relates to web hosting}
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H04L41/5087 3 {wherein the managed service relates to voice services (management of VoIP services H04M7/0081)}
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H04L41/509 3 {wherein the managed service relates to media content delivery, e.g. audio, video or TV}
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H04L41/5093 3 {wherein the managed service relates to messaging or chat services}
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H04L41/5096 3 {wherein the managed service relates to distributed or central networked applications}
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H04L43/00 0 Arrangements for monitoring or testing data switching networks
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H04L43/02 1 Capturing of monitoring data
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H04L43/022 2 by sampling
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H04L43/024 3 by adaptive sampling
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H04L43/026 2 using flow identification
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H04L43/028 2 by filtering
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H04L43/04 1 Processing captured monitoring data, e.g. for logfile generation
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H04L43/045 2 for graphical visualisation of monitoring data
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H04L43/06 1 Generation of reports
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H04L43/062 2 related to network traffic
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H04L43/065 2 related to network devices
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H04L43/067 2 using time frame reporting
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H04L43/08 1 Monitoring or testing based on specific metrics, e.g. QoS, energy consumption or environmental parameters
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H04L43/0805 2 by checking availability
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H04L43/0811 3 by checking connectivity
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H04L43/0817 3 by checking functioning
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H04L43/0823 2 Errors, e.g. transmission errors
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H04L43/0829 3 Packet loss
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H04L43/0835 4 {One way packet loss}
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H04L43/0841 4 {Round trip packet loss}
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H04L43/0847 3 {Transmission error}
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H04L43/0852 2 Delays
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H04L43/0858 3 {One way delays}
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H04L43/0864 3 Round trip delays
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H04L43/087 3 Jitter
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H04L43/0876 2 Network utilisation, e.g. volume of load or congestion level
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H04L43/0882 3 Utilisation of link capacity
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H04L43/0888 3 Throughput
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H04L43/0894 3 Packet rate
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H04L43/091 2 Measuring contribution of individual network components to actual service level
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H04L43/10 1 Active monitoring, e.g. heartbeat, ping or trace-route
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H04L43/103 2 with adaptive polling, i.e. dynamically adapting the polling rate
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H04L43/106 2 using time related information in packets, e.g. by adding timestamps
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H04L43/12 1 Network monitoring probes
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H04L43/14 1 {using software, i.e. software packages (network security related monitoring H04L63/1408)}
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H04L43/16 1 Threshold monitoring
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H04L43/18 1 Protocol analysers
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H04L43/20 1 the monitoring system or the monitored elements being virtualised, abstracted or software-defined entities, e.g. SDN or NFV
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H04L43/50 1 Testing arrangements
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H04L43/55 2 Testing of service level quality, e.g. simulating service usage
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H04L45/00 0 Routing or path finding of packets in data switching networks (routing or path finding in wireless networks H04W40/00)
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H04L45/02 1 Topology update or discovery
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H04L45/021 2 Ensuring consistency of routing table updates, e.g. by using epoch numbers
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H04L45/023 2 Delayed use of routing table updates
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H04L45/025 2 {Updating only a limited number of routers, e.g. fish-eye update}
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H04L45/026 2 {Details of "hello" or keep-alive messages}
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H04L45/028 2 Dynamic adaptation of the update intervals, e.g. event-triggered updates
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H04L45/03 2 by updating link state protocols
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H04L45/033 2 by updating distance vector protocols
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H04L45/036 2 Updating the topology between route computation elements, e.g. between OpenFlow controllers
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H04L45/037 3 Routes obligatorily traversing service-related nodes
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H04L45/0377 4 for service chaining
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H04L45/04 2 {Interdomain routing, e.g. hierarchical routing}
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H04L45/06 2 {Deflection routing, e.g. hot-potato routing}
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H04L45/08 2 {Learning-based routing, e.g. using neural networks or artificial intelligence}
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H04L45/10 2 {Routing in connection-oriented networks, e.g. X.25 or ATM}
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H04L45/12 1 Shortest path evaluation
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H04L45/121 2 by minimising delays
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H04L45/122 2 by minimising distances, e.g. by selecting a route with minimum of number of hops
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H04L45/123 2 {Evaluation of link metrics (techniques for monitoring network metrics H04L43/08)}
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H04L45/124 2 {using a combination of metrics}
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H04L45/125 2 based on throughput or bandwidth
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H04L45/126 2 {minimising geographical or physical path length}
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H04L45/127 2 {based on intermediate node capabilities}
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H04L45/128 2 for finding disjoint paths
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H04L45/1283 3 {with disjoint links}
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H04L45/1287 3 {with disjoint nodes}
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H04L45/14 1 {Routing performance; Theoretical aspects}
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H04L45/16 1 Multipoint routing
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H04L45/17 1 Shortcut routing, e.g. using next hop resolution protocol [NHRP]
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H04L45/18 1 Loop-free operations
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H04L45/20 1 {Hop count for routing purposes, e.g. TTL}
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H04L45/22 1 {Alternate routing}
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H04L45/24 1 Multipath
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H04L45/243 2 using M+N parallel active paths
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H04L45/245 2 {Link aggregation, e.g. trunking}
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H04L45/247 2 using M:N active or standby paths
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H04L45/26 1 {Route discovery packet}
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H04L45/28 1 using route fault recovery
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H04L45/30 1 Routing of multiclass traffic
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H04L45/302 1 Route determination based on requested QoS
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H04L45/304 2 {Route determination for signalling traffic}
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H04L45/306 2 {Route determination based on the nature of the carried application}
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H04L45/3065 3 {for real time traffic}
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H04L45/308 2 {Route determination based on user's profile, e.g. premium users}
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H04L45/32 1 {Flooding (denial of service attacks H04L63/1458)}
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H04L45/34 1 {Source routing}
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H04L45/36 1 {Backward learning}
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H04L45/38 1 {Flow based routing}
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H04L45/40 1 {Wormhole routing}
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H04L45/42 1 Centralised routing
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H04L45/44 1 Distributed routing
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H04L45/46 1 {Cluster building}
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H04L45/48 1 Routing tree calculation
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H04L45/484 2 using multiple routing trees
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H04L45/488 2 using root node determination
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H04L45/50 1 using label swapping, e.g. multi-protocol label switch [MPLS]
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H04L45/502 2 {Frame based}
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H04L45/505 2 {Cell based}
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H04L45/507 2 {Label distribution}
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H04L45/52 1 Multiprotocol routers
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H04L45/54 1 {Organization of routing tables}
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H04L45/56 1 {Routing software}
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H04L45/563 2 {Software download or update}
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H04L45/566 2 {Routing instructions carried by the data packet, e.g. active networks}
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H04L45/58 1 Association of routers
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H04L45/583 2 {Stackable routers}
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H04L45/586 2 of virtual routers
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H04L45/60 1 Router architectures
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H04L45/62 1 {Wavelength based (optical switching H04Q11/0062)}
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H04L45/64 1 using an overlay routing layer
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H04L45/645 1 Splitting route computation layer and forwarding layer, e.g. routing according to path computational element [PCE] or based on OpenFlow functionality
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H04L45/655 2 Interaction between route computation entities and forwarding entities, e.g. for route determination or for flow table update
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H04L45/66 1 {Layer 2 routing, e.g. in Ethernet based MAN's}
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H04L45/68 1 {Pseudowire emulation, e.g. IETF WG PWE3}
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H04L45/70 1 {Routing based on monitoring results}
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H04L45/72 1 {Routing based on the source address}
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H04L45/74 1 Address processing for routing
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H04L45/741 2 Routing in networks with a plurality of addressing schemes, e.g. with both IPv4 and IPv6
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H04L45/742 2 {Route cache; Operation thereof}
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H04L45/745 2 Address table lookup; Address filtering
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H04L45/7452 3 Multiple parallel or consecutive lookup operations (lookup operation involving Bloom filters H04L45/7459)
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H04L45/7453 3 using hashing
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H04L45/7459 4 using Bloom filters
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H04L45/74591 3 {using content-addressable memories [CAM]}
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H04L45/748 3 using longest matching prefix
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H04L45/76 1 Routing in software-defined topologies, e.g. routing between virtual machines
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H04L45/80 1 Ingress point selection by the source endpoint, e.g. selection of ISP or POP
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H04L45/85 2 Selection among different networks
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H04L45/851 3 Dynamic network selection or re-selection, e.g. after degradation of quality
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H04L47/00 0 Traffic control in data switching networks (arrangements for detecting or correcting errors in the information received H04L1/00)
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H04L47/10 1 Flow control; Congestion control
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H04L47/11 2 Identifying congestion
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H04L47/115 3 {using a dedicated packet}
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H04L47/12 2 Avoiding congestion; Recovering from congestion
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H04L47/122 3 by diverting traffic away from congested entities
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H04L47/125 3 by balancing the load, e.g. traffic engineering
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H04L47/127 3 by using congestion prediction
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H04L47/129 3 at the destination endpoint, e.g. reservation of terminal resources or buffer space
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H04L47/13 2 {in a LAN segment, e.g. ring or bus}
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H04L47/135 3 {by jamming the transmission media}
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H04L47/15 2 {in relation to multipoint traffic (arrangements for broadcast or multicast in data networks H04L12/18)}
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H04L47/16 2 {in connection oriented networks, e.g. frame relay}
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H04L47/17 2 Interaction among intermediate nodes, e.g. hop by hop
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H04L47/18 2 {End to end}
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H04L47/19 2 at layers above the network layer (network arrangements for networked applications for scheduling or organising the servicing of application requests H04L67/60)
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H04L47/193 3 at the transport layer, e.g. TCP related
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H04L47/196 3 {Integration of transport layer protocols, e.g. TCP and UDP}
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H04L47/20 2 Traffic policing
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H04L47/21 2 using leaky-bucket
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H04L47/215 2 using token-bucket
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H04L47/22 2 Traffic shaping
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H04L47/225 3 {Determination of shaping rate, e.g. using a moving window}
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H04L47/23 2 {Bit dropping}
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H04L47/24 2 Traffic characterised by specific attributes, e.g. priority or QoS
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H04L47/2408 3 for supporting different services, e.g. a differentiated services [DiffServ] type of service
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H04L47/2416 3 Real-time traffic
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H04L47/2425 3 for supporting services specification, e.g. SLA
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H04L47/2433 4 {Allocation of priorities to traffic types}
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H04L47/2441 3 relying on flow classification, e.g. using integrated services [IntServ]
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H04L47/245 3 {using preemption}
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H04L47/2458 3 {Modification of priorities while in transit}
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H04L47/2466 3 using signalling traffic
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H04L47/2475 3 for supporting traffic characterised by the type of applications
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H04L47/2483 3 involving identification of individual flows
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H04L47/2491 3 Mapping quality of service [QoS] requirements between different networks
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H04L47/25 2 with rate being modified by the source upon detecting a change of network conditions
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H04L47/26 2 using explicit feedback to the source, e.g. choke packets
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H04L47/263 3 Rate modification at the source after receiving feedback
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H04L47/265 3 sent by intermediate network nodes
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H04L47/266 3 {Stopping or restarting the source, e.g. X-on or X-off}
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H04L47/267 3 sent by the destination endpoint (network streaming of media packets with control of the source by the destination H04L65/613)
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H04L47/27 2 Evaluation or update of window size, e.g. using information derived from acknowledged [ACK] packets
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H04L47/28 2 in relation to timing considerations
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H04L47/283 3 in response to processing delays, e.g. caused by jitter or round trip time [RTT]
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H04L47/286 3 {Time to live}
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H04L47/29 2 {using a combination of thresholds}
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H04L47/30 2 in combination with information about buffer occupancy at either end or at transit nodes
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H04L47/31 2 by tagging of packets, e.g. using discard eligibility [DE] bits
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H04L47/32 2 by discarding or delaying data units, e.g. packets or frames
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H04L47/323 3 {Discarding or blocking control packets, e.g. ACK packets}
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H04L47/326 3 {with random discard, e.g. random early discard [RED]}
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H04L47/33 2 using forward notification
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H04L47/34 2 ensuring sequence integrity, e.g. using sequence numbers
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H04L47/35 2 by embedding flow control information in regular packets, e.g. piggybacking
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H04L47/36 2 by determining packet size, e.g. maximum transfer unit [MTU]
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H04L47/365 3 {Dynamic adaptation of the packet size}
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H04L47/37 2 {Slow start}
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H04L47/38 2 by adapting coding or compression rate
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H04L47/39 2 {Credit based}
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H04L47/40 2 using split connections
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H04L47/41 2 by acting on aggregated flows or links
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H04L47/43 2 Assembling or disassembling of packets, e.g. segmentation and reassembly [SAR]
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H04L47/431 3 using padding or de-padding
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H04L47/50 1 Queue scheduling
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H04L47/52 2 by attributing bandwidth to queues
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H04L47/521 3 {Static queue service slot or fixed bandwidth allocation}
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H04L47/522 3 {Dynamic queue service slot or variable bandwidth allocation}
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H04L47/524 4 {Queue skipping}
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H04L47/525 3 by redistribution of residual bandwidth
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H04L47/527 3 {Quantum based scheduling, e.g. credit or deficit based scheduling or token bank}
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H04L47/528 3 {Minimum bandwidth guarantee}
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H04L47/54 2 {Loss aware scheduling}
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H04L47/56 2 implementing delay-aware scheduling
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H04L47/562 3 {Attaching a time tag to queues}
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H04L47/564 3 {Attaching a deadline to packets, e.g. earliest due date first}
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H04L47/566 4 {Deadline varies as a function of time spent in the queue}
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H04L47/568 3 {Calendar queues or timing rings}
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H04L47/58 2 {Changing or combining different scheduling modes, e.g. multimode scheduling}
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H04L47/60 2 implementing hierarchical scheduling
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H04L47/62 2 characterised by scheduling criteria
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H04L47/6205 3 {Arrangements for avoiding head of line blocking}
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H04L47/621 3 {Individual queue per connection or flow, e.g. per VC}
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H04L47/6215 3 {Individual queue per QOS, rate or priority}
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H04L47/622 3 {Queue service order}
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H04L47/6225 4 {Fixed service order, e.g. Round Robin}
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H04L47/623 4 {Weighted service order}
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H04L47/6235 4 {Variable service order}
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H04L47/624 3 {Altering the ordering of packets in an individual queue}
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H04L47/6245 3 {Modifications to standard FIFO or LIFO}
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H04L47/625 3 for service slots or service orders
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H04L47/6255 4 {queue load conditions, e.g. longest queue first}
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H04L47/626 4 {channel conditions}
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H04L47/6265 4 {past bandwidth allocation}
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H04L47/627 4 {policing}
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H04L47/6275 4 based on priority
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H04L47/628 4 based on packet size, e.g. shortest packet first
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H04L47/6285 3 {Provisions for avoiding starvation of low priority queues}
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H04L47/629 3 Ensuring fair share of resources, e.g. weighted fair queuing [WFQ]
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H04L47/6295 3 using multiple queues, one for each individual QoS, connection, flow or priority
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H04L47/70 1 Admission control; Resource allocation
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H04L47/72 2 using reservation actions during connection setup
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H04L47/722 3 at the destination endpoint, e.g. reservation of terminal resources or buffer space
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H04L47/724 3 at intermediate nodes, e.g. resource reservation protocol [RSVP]
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H04L47/726 3 Reserving resources in multiple paths to be used simultaneously (by balancing the load H04L47/125)
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H04L47/728 4 {for backup paths}
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H04L47/74 2 measures in reaction to resource unavailability
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H04L47/741 3 {Holding a request until resources become available}
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H04L47/743 3 {Reaction at the end points}
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H04L47/745 3 {Reaction in network}
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H04L47/746 3 {Reaction triggered by a failure}
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H04L47/748 3 {Negotiation of resources, e.g. modification of a request}
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H04L47/76 2 using dynamic resource allocation, e.g. in-call renegotiation requested by the user or requested by the network in response to changing network conditions
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H04L47/762 3 triggered by the network
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H04L47/765 3 triggered by the end-points
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H04L47/767 4 {after changing the attachment point, e.g. after hand-off}
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H04L47/78 2 Architectures of resource allocation
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H04L47/781 3 {Centralised allocation of resources}
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H04L47/782 3 {Hierarchical allocation of resources, e.g. involving a hierarchy of local and centralised entities}
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H04L47/783 3 Distributed allocation of resources, e.g. bandwidth brokers
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H04L47/785 4 among multiple network domains, e.g. multilateral agreements
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H04L47/786 5 {Mapping reservation between domains}
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H04L47/787 4 {Bandwidth trade among domains}
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H04L47/788 3 {Autonomous allocation of resources}
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H04L47/80 2 Actions related to the user profile or the type of traffic
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H04L47/801 3 {Real time traffic}
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H04L47/803 3 {Application aware}
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H04L47/805 3 {QOS or priority aware}
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H04L47/806 3 {Broadcast or multicast traffic}
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H04L47/808 3 {User-type aware}
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H04L47/82 2 {Miscellaneous aspects}
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H04L47/821 3 {Prioritising resource allocation or reservation requests}
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H04L47/822 3 {Collecting or measuring resource availability data}
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H04L47/823 3 {Prediction of resource usage}
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H04L47/824 3 {Applicable to portable or mobile terminals}
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H04L47/825 3 {Involving tunnels, e.g. MPLS}
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H04L47/826 3 {Involving periods of time}
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H04L47/827 3 {Aggregation of resource allocation or reservation requests}
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H04L47/828 3 {Allocation of resources per group of connections, e.g. per group of users}
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H04L47/829 3 {Topology based}
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H04L47/83 2 based on usage prediction
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H04L49/00 0 Packet switching elements
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H04L49/10 1 characterised by the switching fabric construction
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H04L49/101 2 using crossbar or matrix
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H04L49/102 2 using shared medium, e.g. bus or ring
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H04L49/103 2 using a shared central buffer; using a shared memory
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H04L49/104 2 Asynchronous transfer mode [ATM] switching fabrics
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H04L49/105 3 {ATM switching elements}
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H04L49/106 4 {using space switching, e.g. crossbar or matrix}
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H04L49/107 4 {using shared medium}
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H04L49/108 4 {using shared central buffer}
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H04L49/109 2 Integrated on microchip, e.g. switch-on-chip
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H04L49/111 2 Switch interfaces, e.g. port details
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H04L49/112 2 Switch control, e.g. arbitration
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H04L49/113 2 Arrangements for redundant switching, e.g. using parallel planes
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H04L49/115 3 Transferring a complete packet or cell through each plane
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H04L49/116 3 Transferring a part of the packet through each plane, e.g. by bit-slicing
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H04L49/118 3 Address processing within a device, e.g. using internal ID or tags for routing within a switch
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H04L49/15 1 Interconnection of switching modules
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H04L49/1507 2 {Distribute and route fabrics, e.g. sorting-routing or Batcher-Banyan}
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H04L49/1515 2 Non-blocking multistage, e.g. Clos
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H04L49/1523 3 {Parallel switch fabric planes}
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H04L49/153 3 {ATM switching fabrics having parallel switch planes}
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H04L49/1538 4 {Cell slicing}
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H04L49/1546 3 using pipelined operation
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H04L49/1553 2 {Interconnection of ATM switching modules, e.g. ATM switching fabrics}
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H04L49/1561 3 {Distribute and route fabrics, e.g. Batcher-Banyan}
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H04L49/1569 3 {Clos switching fabrics}
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H04L49/1576 3 {Crossbar or matrix}
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H04L49/1584 3 {Full Mesh, e.g. knockout}
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H04L49/1592 3 {Perfect Shuffle}
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H04L49/20 1 Support for services
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H04L49/201 2 Multicast operation; Broadcast operation
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H04L49/203 3 {ATM switching fabrics with multicast or broadcast capabilities}
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H04L49/205 2 {Quality of Service based}
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H04L49/206 3 {Real Time traffic}
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H04L49/208 2 {Port mirroring}
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H04L49/25 1 Routing or path finding in a switch fabric
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H04L49/251 2 {Cut-through or wormhole routing}
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H04L49/252 2 {Store and forward routing}
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H04L49/253 2 using establishment or release of connections between ports
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H04L49/254 3 {Centralised controller, i.e. arbitration or scheduling}
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H04L49/255 3 {Control mechanisms for ATM switching fabrics}
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H04L49/256 2 {Routing or path finding in ATM switching fabrics}
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H04L49/257 3 {Cut-through or wormhole routing}
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H04L49/258 3 {Grouping}
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H04L49/30 1 {Peripheral units, e.g. input or output ports}
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H04L49/3009 2 {Header conversion, routing tables or routing tags}
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H04L49/3018 2 {Input queuing}
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H04L49/3027 2 {Output queuing}
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H04L49/3036 2 {Shared queuing}
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H04L49/3045 2 {Virtual queuing}
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H04L49/3054 2 {Auto-negotiation, e.g. access control between switch gigabit interface connector [GBIC] and link}
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H04L49/3063 2 {Pipelined operation}
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H04L49/3072 2 {Packet splitting}
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H04L49/3081 2 {ATM peripheral units, e.g. policing, insertion or extraction}
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H04L49/309 3 {Header conversion, routing tables or routing tags}
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H04L49/35 1 Switches specially adapted for specific applications
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H04L49/351 2 for local area network [LAN], e.g. Ethernet switches
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H04L49/352 3 {Gigabit ethernet switching [GBPS]}
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H04L49/353 2 {Support for fire wire switches, i.e. according to IEEE 1394}
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H04L49/354 2 for supporting virtual local area networks [VLAN]
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H04L49/355 2 {Application aware switches, e.g. for HTTP}
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H04L49/356 2 for storage area networks
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H04L49/357 3 {Fibre channel switches}
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H04L49/358 3 {Infiniband Switches}
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H04L49/40 1 Constructional details, e.g. power supply, mechanical construction or backplane
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H04L49/405 2 {Physical details, e.g. power supply, mechanical construction or backplane of ATM switches}
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H04L49/45 1 Arrangements for providing or supporting expansion
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H04L49/455 2 {Provisions for supporting expansion in ATM switches}
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H04L49/50 1 Overload detection or protection within a single switching element
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H04L49/501 2 {Overload detection}
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H04L49/503 3 {Policing}
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H04L49/505 2 Corrective measures
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H04L49/506 3 Backpressure
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H04L49/508 3 {Head of Line Blocking Avoidance}
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H04L49/55 1 Prevention, detection or correction of errors
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H04L49/552 2 by ensuring the integrity of packets received through redundant connections
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H04L49/555 2 {Error detection}
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H04L49/557 2 {Error correction, e.g. fault recovery or fault tolerance}
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H04L49/60 1 Software-defined switches
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H04L49/602 2 {Multilayer or multiprotocol switching, e.g. IP switching}
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H04L49/604 2 {Hybrid IP/Ethernet switches}
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H04L49/606 2 {Hybrid ATM switches, e.g. ATM&STM, ATM&Frame Relay or ATM&IP}
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H04L49/608 2 {ATM switches adapted to switch variable length packets, e.g. IP packets}
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H04L49/65 1 Re-configuration of fast packet switches
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H04L49/70 1 {Virtual switches}
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H04L49/90 1 Buffering arrangements
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H04L49/9005 2 using dynamic buffer space allocation
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H04L49/901 2 using storage descriptor, e.g. read or write pointers
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H04L49/9015 2 for supporting a linked list
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H04L49/9021 2 {Plurality of buffers per packet}
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H04L49/9023 2 for implementing a jitter-buffer
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H04L49/9026 2 {Single buffer per packet}
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H04L49/9031 2 {Wraparound memory, e.g. overrun or underrun detection}
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H04L49/9036 2 {Common buffer combined with individual queues}
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H04L49/9042 2 {Separate storage for different parts of the packet, e.g. header and payload}
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H04L49/9047 2 including multiple buffers, e.g. buffer pools
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H04L49/9052 3 {with buffers of different sizes}
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H04L49/9057 2 Arrangements for supporting packet reassembly or resequencing
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H04L49/9063 2 {Intermediate storage in different physical parts of a node or terminal}
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H04L49/9068 3 {in the network interface card}
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H04L49/9073 4 {Early interruption upon arrival of a fraction of a packet}
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H04L49/9078 3 {using an external memory or storage device}
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H04L49/9084 2 {Reactions to storage capacity overflow}
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H04L49/9089 3 {replacing packets in a storage arrangement, e.g. pushout}
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H04L49/9094 4 {Arrangements for simultaneous transmit and receive, e.g. simultaneous reading/writing from/to the storage element}
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H04L51/00 0 User-to-user messaging in packet-switching networks, transmitted according to store-and-forward or real-time protocols, e.g. e-mail
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H04L51/02 1 using automatic reactions or user delegation, e.g. automatic replies or chatbot-generated messages
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H04L51/04 1 Real-time or near real-time messaging, e.g. instant messaging [IM]
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H04L51/043 2 using or handling presence information
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H04L51/046 2 Interoperability with other network applications or services
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H04L51/06 1 Message adaptation to terminal or network requirements
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H04L51/063 2 Content adaptation, e.g. replacement of unsuitable content
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H04L51/066 2 Format adaptation, e.g. format conversion or compression
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H04L51/07 1 characterised by the inclusion of specific contents
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H04L51/08 2 Annexed information, e.g. attachments
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H04L51/10 2 Multimedia information
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H04L51/18 2 Commands or executable codes
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H04L51/21 1 Monitoring or handling of messages
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H04L51/212 2 using filtering or selective blocking
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H04L51/214 2 using selective forwarding
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H04L51/216 2 Handling conversation history, e.g. grouping of messages in sessions or threads
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H04L51/222 2 using geographical location information, e.g. messages transmitted or received in proximity of a certain spot or area
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H04L51/224 2 providing notification on incoming messages, e.g. pushed notifications of received messages
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H04L51/226 2 Delivery according to priorities
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H04L51/23 2 Reliability checks, e.g. acknowledgments or fault reporting
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H04L51/234 2 for tracking messages
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H04L51/42 1 Mailbox-related aspects, e.g. synchronisation of mailboxes
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H04L51/48 1 Message addressing, e.g. address format or anonymous messages, aliases
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H04L51/52 1 for supporting social networking services
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H04L51/56 1 Unified messaging, e.g. interactions between e-mail, instant messaging or converged IP messaging [CPM]
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H04L51/58 1 Message adaptation for wireless communication
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H04L61/00 0 Network arrangements, protocols or services for addressing or naming
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H04L61/09 1 Mapping addresses
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H04L61/10 2 of different types
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H04L61/103 3 across network layers, e.g. resolution of network layer into physical layer addresses or address resolution protocol [ARP]
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H04L61/106 3 across networks, e.g. mapping telephone numbers to data network addresses
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H04L61/25 2 of the same type
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H04L61/2503 3 Translation of Internet protocol [IP] addresses
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H04L61/251 4 between different IP versions
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H04L61/2514 4 between local and global IP addresses
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H04L61/2517 4 using port numbers
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H04L61/2521 4 Translation architectures other than single NAT servers
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H04L61/2525 5 {Translation at a client}
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H04L61/2528 5 {Translation at a proxy}
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H04L61/2532 5 {Clique of NAT servers}
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H04L61/2535 5 {Multiple local networks, e.g. resolving potential IP address conflicts}
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H04L61/2539 4 Hiding addresses; Keeping addresses anonymous
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H04L61/2542 4 {involving dual-stack hosts}
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H04L61/2546 4 Arrangements for avoiding unnecessary translation
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H04L61/255 4 Maintenance or indexing of mapping tables
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H04L61/2553 5 Binding renewal aspects, e.g. using keep-alive messages
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H04L61/2557 4 Translation policies or rules
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H04L61/256 4 NAT traversal
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H04L61/2564 5 {for a higher-layer protocol, e.g. for session initiation protocol [SIP]}
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H04L61/2567 5 for reachability, e.g. inquiring the address of a correspondent behind a NAT server
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H04L61/2571 5 {for identification, e.g. for authentication or billing (charging arrangements H04L12/14)}
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H04L61/2575 5 using address mapping retrieval, e.g. simple traversal of user datagram protocol through session traversal utilities for NAT [STUN]
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H04L61/2578 5 without involvement of the NAT server
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H04L61/2582 5 through control of the NAT server, e.g. using universal plug and play [UPnP]
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H04L61/2585 5 through application level gateway [ALG]
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H04L61/2589 5 over a relay server, e.g. traversal using relay for network address translation [TURN]
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H04L61/2592 4 using tunnelling or encapsulation
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H04L61/2596 3 Translation of addresses of the same type other than IP, e.g. translation from MAC to MAC addresses
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H04L61/30 1 Managing network names, e.g. use of aliases or nicknames (name-to-address mapping H04L61/45)
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H04L61/3005 2 {Mechanisms for avoiding name conflicts}
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H04L61/301 2 Name conversion
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H04L61/3015 2 Name registration, generation or assignment
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H04L61/302 3 {Administrative registration, e.g. for domain names at internet corporation for assigned names and numbers [ICANN]}
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H04L61/3025 3 {Domain name generation or assignment}
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H04L61/35 1 {involving non-standard use of addresses for implementing network functionalities, e.g. coding subscription information within the address or functional addressing, i.e. assigning an address to a function}
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H04L61/45 1 Network directories; Name-to-address mapping
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H04L61/4505 2 using standardised directories; using standardised directory access protocols
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H04L61/4511 3 using domain name system [DNS]
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H04L61/4517 3 using open systems interconnection [OSI] directories, e.g. X.500
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H04L61/4523 3 using lightweight directory access protocol [LDAP]
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H04L61/4535 2 using an address exchange platform which sets up a session between two nodes, e.g. rendezvous servers, session initiation protocols [SIP] registrars or H.323 gatekeepers
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H04L61/4541 2 Directories for service discovery
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H04L61/4547 2 {for personal communications, i.e. using a personal identifier}
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H04L61/4552 2 Lookup mechanisms between a plurality of directories; Synchronisation of directories, e.g. metadirectories
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H04L61/4553 2 {Object oriented directories, e.g. common object request broker architecture [CORBA] name server}
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H04L61/4555 2 {Directories for electronic mail or instant messaging}
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H04L61/4557 2 Directories for hybrid networks, e.g. including telephone numbers
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H04L61/457 2 {containing identifiers of data entities on a computer, e.g. file names}
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H04L61/4588 2 containing mobile subscriber information, e.g. home subscriber server [HSS]
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H04L61/4594 2 Address books, i.e. directories containing contact information about correspondents (telephone directories in user terminals H04M1/27453)
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H04L61/50 1 Address allocation
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H04L61/5007 2 Internet protocol [IP] addresses
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H04L61/5014 3 using dynamic host configuration protocol [DHCP] or bootstrap protocol [BOOTP]
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H04L61/503 3 using an authentication, authorisation and accounting [AAA] protocol, e.g. remote authentication dial-in user service [RADIUS] or Diameter
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H04L61/5038 2 for local use, e.g. in LAN or USB networks, or in a controller area network [CAN]
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H04L61/5046 2 Resolving address allocation conflicts; Testing of addresses (testing when self-assigning an address H04L61/5092)
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H04L61/5053 2 Lease time; Renewal aspects
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H04L61/5061 2 Pools of addresses
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H04L61/5069 2 for group communication, multicast communication or broadcast communication
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H04L61/5076 2 Update or notification mechanisms, e.g. DynDNS
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H04L61/5084 2 Providing for device mobility (network addressing or numbering for mobility support in wireless networks H04W8/26; mobile IP H04W80/04)
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H04L61/5092 2 by self-assignment, e.g. picking addresses at random and testing if they are already in use
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H04L61/58 1 Caching of addresses or names
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H04L61/59 1 using proxies for addressing
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H04L63/00 0 {Network architectures or network communication protocols for network security (cryptographic mechanisms or cryptographic arrangements for secret or secure communication H04L9/00; network architectures or network communication protocols for wireless network security H04W12/00; security arrangements for protecting computers or computer systems against unauthorised activity G06F21/00)}
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H04L63/02 1 {for separating internal from external traffic, e.g. firewalls}
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H04L63/0209 2 {Architectural arrangements, e.g. perimeter networks or demilitarized zones}
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H04L63/0218 3 {Distributed architectures, e.g. distributed firewalls}
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H04L63/0227 2 {Filtering policies (mail message filtering H04L51/212)}
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H04L63/0236 3 {Filtering by address, protocol, port number or service, e.g. IP-address or URL}
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H04L63/0245 3 {Filtering by information in the payload}
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H04L63/0254 3 {Stateful filtering}
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H04L63/0263 3 {Rule management}
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H04L63/0272 2 {Virtual private networks}
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H04L63/0281 2 {Proxies}
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H04L63/029 2 {Firewall traversal, e.g. tunnelling or, creating pinholes}
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H04L63/04 1 {for providing a confidential data exchange among entities communicating through data packet networks}
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H04L63/0407 2 {wherein the identity of one or more communicating identities is hidden (cryptographic mechanisms or cryptographic arrangements for anonymous credentials or for identity based cryptographic systems H04L9/00)}
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H04L63/0414 3 {during transmission, i.e. party's identity is protected against eavesdropping, e.g. by using temporary identifiers, but is known to the other party or parties involved in the communication}
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H04L63/0421 3 {Anonymous communication, i.e. the party's identifiers are hidden from the other party or parties, e.g. using an anonymizer}
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H04L63/0428 2 {wherein the data content is protected, e.g. by encrypting or encapsulating the payload}
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H04L63/0435 3 {wherein the sending and receiving network entities apply symmetric encryption, i.e. same key used for encryption and decryption (cryptographic mechanisms or cryptographic arrangements for symmetric key encryption H04L9/06)}
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H04L63/0442 3 {wherein the sending and receiving network entities apply asymmetric encryption, i.e. different keys for encryption and decryption (cryptographic mechanisms or cryptographic arrangements for public-key encryption H04L9/30)}
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H04L63/045 3 {wherein the sending and receiving network entities apply hybrid encryption, i.e. combination of symmetric and asymmetric encryption (cryptographic mechanisms or cryptographic arrangements using a plurality of keys or algorithms H04L9/14)}
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H04L63/0457 3 {wherein the sending and receiving network entities apply dynamic encryption, e.g. stream encryption (cryptographic mechanisms or cryptographic arrangements for stream encryption H04L9/065)}
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H04L63/0464 3 {using hop-by-hop encryption, i.e. wherein an intermediate entity decrypts the information and re-encrypts it before forwarding it}
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H04L63/0471 3 {applying encryption by an intermediary, e.g. receiving clear information at the intermediary and encrypting the received information at the intermediary before forwarding}
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H04L63/0478 3 {applying multiple layers of encryption, e.g. nested tunnels or encrypting the content with a first key and then with at least a second key (cryptographic mechanisms or cryptographic arrangements using a plurality of keys or algorithms H04L9/14)}
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H04L63/0485 3 {Networking architectures for enhanced packet encryption processing, e.g. offloading of IPsec packet processing or efficient security association look-up}
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H04L63/0492 3 {by using a location-limited connection, e.g. near-field communication or limited proximity of entities}
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H04L63/06 1 {for supporting key management in a packet data network (cryptographic mechanisms or cryptographic arrangements for key management H04L9/08)}
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H04L63/061 2 {for key exchange, e.g. in peer-to-peer networks (cryptographic mechanisms or cryptographic arrangements for key agreement H04L9/0838)}
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H04L63/062 2 {for key distribution, e.g. centrally by trusted party (cryptographic mechanisms or cryptographic arrangements for key distribution involving a central third party H04L9/0819)}
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H04L63/064 3 {Hierarchical key distribution, e.g. by multi-tier trusted parties}
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H04L63/065 2 {for group communications (cryptographic mechanisms or cryptographic arrangements for key management involving conference or group key H04L9/0833)}
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H04L63/067 2 {using one-time keys (cryptographic mechanisms or cryptographic arrangements for generation of one-time passwords H04L9/0863)}
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H04L63/068 2 {using time-dependent keys, e.g. periodically changing keys (cryptographic mechanisms or cryptographic arrangements for controlling usage of secret information H04L9/088)}
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H04L63/08 1 {for supporting authentication of entities communicating through a packet data network (cryptographic mechanisms or cryptographic arrangements for entity authentication H04L9/32)}
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H04L63/0807 2 {using tickets, e.g. Kerberos (cryptographic mechanisms or cryptographic arrangements for entity authentication using tickets or tokens H04L9/3213)}
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H04L63/0815 2 {providing single-sign-on or federations}
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H04L63/0823 2 {using certificates (cryptographic mechanisms or cryptographic arrangements for entity authentication involving certificates H04L9/3263)}
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H04L63/083 2 {using passwords (cryptographic mechanisms or cryptographic arrangements for entity authentication using a predetermined code H04L9/3226)}
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H04L63/0838 3 {using one-time-passwords}
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H04L63/0846 3 {using time-dependent-passwords, e.g. periodically changing passwords}
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H04L63/0853 2 {using an additional device, e.g. smartcard, SIM or a different communication terminal (cryptographic mechanisms or cryptographic arrangements for entity authentication involving additional secure or trusted devices H04L9/3234)}
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H04L63/0861 2 {using biometrical features, e.g. fingerprint, retina-scan (cryptographic mechanisms or cryptographic arrangements for entity authentication using biological data H04L9/3231)}
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H04L63/0869 2 {for achieving mutual authentication (cryptographic mechanisms or cryptographic arrangements for mutual authentication H04L9/3273)}
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H04L63/0876 2 {based on the identity of the terminal or configuration, e.g. MAC address, hardware or software configuration or device fingerprint}
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H04L63/0884 2 {by delegation of authentication, e.g. a proxy authenticates an entity to be authenticated on behalf of this entity vis-à-vis an authentication entity}
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H04L63/0892 2 {by using authentication-authorization-accounting [AAA] servers or protocols}
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H04L63/10 1 {for controlling access to network resources (restricting network management access H04L41/28)}
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H04L63/101 2 {Access control lists [ACL]}
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H04L63/102 2 {Entity profiles}
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H04L63/104 2 {Grouping of entities}
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H04L63/105 2 {Multiple levels of security}
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H04L63/107 2 {wherein the security policies are location-dependent, e.g. entities privileges depend on current location or allowing specific operations only from locally connected terminals}
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H04L63/108 2 {when the policy decisions are valid for a limited amount of time}
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H04L63/12 1 {Applying verification of the received information (cryptographic mechanisms or cryptographic arrangements for data integrity or data verification H04L9/32)}
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H04L63/123 2 {received data contents, e.g. message integrity}
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H04L63/126 2 {the source of the received data}
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H04L63/14 1 {for detecting or protecting against malicious traffic}
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H04L63/1408 2 {by monitoring network traffic (monitoring network traffic per se H04L43/00)}
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H04L63/1416 3 {Event detection, e.g. attack signature detection}
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H04L63/1425 3 {Traffic logging, e.g. anomaly detection}
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H04L63/1433 2 {Vulnerability analysis}
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H04L63/1441 2 {Countermeasures against malicious traffic (countermeasures against attacks on cryptographic mechanisms H04L9/002)}
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H04L63/145 3 {the attack involving the propagation of malware through the network, e.g. viruses, trojans or worms}
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H04L63/1458 3 {Denial of Service}
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H04L63/1466 3 {Active attacks involving interception, injection, modification, spoofing of data unit addresses, e.g. hijacking, packet injection or TCP sequence number attacks}
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H04L63/1475 3 {Passive attacks, e.g. eavesdropping or listening without modification of the traffic monitored}
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H04L63/1483 3 {service impersonation, e.g. phishing, pharming or web spoofing (detection of rogue wireless access points H04W12/12)}
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H04L63/1491 3 {using deception as countermeasure, e.g. honeypots, honeynets, decoys or entrapment}
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H04L63/16 1 {Implementing security features at a particular protocol layer}
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H04L63/162 2 {at the data link layer}
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H04L63/164 2 {at the network layer}
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H04L63/166 2 {at the transport layer}
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H04L63/168 2 {above the transport layer}
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H04L63/18 1 {using different networks or paths for security, e.g. using out of band channels (cryptographic mechanisms or cryptographic arrangements for key distribution involving distinctive intermediate devices or communication paths H04L9/0827; cryptographic mechanisms or cryptographic arrangements for authentication using a plurality of channels H04L9/3215)}
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H04L63/20 1 {for managing network security; network security policies in general (filtering policies H04L63/0227)}
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H04L63/205 2 {involving negotiation or determination of the one or more network security mechanisms to be used, e.g. by negotiation between the client and the server or between peers or by selection according to the capabilities of the entities involved (negotiation of communication capabilities H04L69/24)}
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H04L63/30 1 {for supporting lawful interception, monitoring or retaining of communications or communication related information (circuit switched telephony call monitoring H04M3/2281)}
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H04L63/302 2 {gathering intelligence information for situation awareness or reconnaissance}
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H04L63/304 2 {intercepting circuit switched data communications (lawful interception of wireless network communications H04W12/02)}
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H04L63/306 2 {intercepting packet switched data communications, e.g. Web, Internet or IMS communications}
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H04L63/308 2 {retaining data, e.g. retaining successful, unsuccessful communication attempts, internet access, or e-mail, internet telephony, intercept related information or call content}
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H04L65/00 0 Network arrangements, protocols or services for supporting real-time applications in data packet communication (real-time or near real-time messaging, e.g. instant messaging [IM] H04L51/04; selective video distribution H04N21/00)
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H04L65/10 1 Architectures or entities
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H04L65/1013 2 {Network architectures, gateways, control or user entities}
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H04L65/1016 2 IP multimedia subsystem [IMS]
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H04L65/102 2 Gateways (arrangements for connecting between networks having differing types of switching systems, e.g. gateways, H04L12/66)
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H04L65/1023 3 Media gateways
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H04L65/1026 4 {at the edge}
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H04L65/103 4 {in the network}
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H04L65/1033 3 Signalling gateways
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H04L65/1036 4 {at the edge}
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H04L65/104 4 {in the network}
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H04L65/1043 3 Gateway controllers, e.g. media gateway control protocol [MGCP] controllers
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H04L65/1045 2 Proxies, e.g. for session initiation protocol [SIP]
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H04L65/1046 2 Call controllers; Call servers
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H04L65/1053 2 IP private branch exchange [PBX] functionality entities or arrangements (circuit switched PBXs H04M3/00)
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H04L65/1055 3 Single-site
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H04L65/1056 3 Multi-site
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H04L65/1059 2 End-user terminal functionalities specially adapted for real-time communication
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H04L65/1063 2 Application servers providing network services (systems providing special services to telephonic subscribers H04M3/42)
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H04L65/1066 1 Session management
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H04L65/1069 2 Session establishment or de-establishment
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H04L65/1073 2 Registration or de-registration
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H04L65/1076 2 Screening of IP real time communications, e.g. spam over Internet telephony [SPIT]
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H04L65/1079 3 {of unsolicited session attempts, e.g. SPIT}
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H04L65/1083 2 In-session procedures
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H04L65/1086 3 {session scope modification}
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H04L65/1089 3 by adding media; by removing media
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H04L65/1093 3 by adding participants; by removing participants
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H04L65/1094 3 Inter-user-equipment sessions transfer or sharing
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H04L65/1095 3 Inter-network session transfer or sharing
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H04L65/1096 2 Supplementary features, e.g. call forwarding or call holding (systems providing special services or facilities to telephony subscribers H04M3/42)
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H04L65/1101 2 Session protocols
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H04L65/1104 3 Session initiation protocol [SIP]
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H04L65/1106 3 Call signalling protocols; H.323 and related
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H04L65/1108 3 Web based protocols, e.g. webRTC
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H04L65/40 1 Support for services or applications
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H04L65/401 2 wherein the services involve a main real-time session and one or more additional parallel real-time or time sensitive sessions, e.g. white board sharing or spawning of a subconference
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H04L65/4015 3 {where at least one of the additional parallel sessions is real time or time sensitive, e.g. white board sharing, collaboration or spawning of a subconference}
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H04L65/402 2 wherein the services involve a main real-time session and one or more additional parallel non-real time sessions, e.g. downloading a file in a parallel FTP session, initiating an email or combinational services
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H04L65/4025 3 {where none of the additional parallel sessions is real time or time sensitive, e.g. downloading a file in a parallel FTP session, initiating an email or combinational services}
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H04L65/403 2 Arrangements for multi-party communication, e.g. for conferences (data switching systems for conference H04L12/18; arrangements for connecting several subscribers to a common circuit, i.e. affording conference facilities H04M3/56; television conferencing systems H04N7/15)
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H04L65/4038 3 with floor control
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H04L65/4046 3 {with distributed floor control}
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H04L65/4053 3 without floor control
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H04L65/4061 2 Push-to services, e.g. push-to-talk or push-to-video
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H04L65/60 1 Network streaming of media packets
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H04L65/61 2 for supporting one-way streaming services, e.g. Internet radio
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H04L65/611 3 for multicast or broadcast (systems for broadcast or conference H04L12/18; arrangements for broadcast or distribution combined with broadcast H04H20/00; arrangements for broadcast applications with a direct linkage to broadcast information or to broadcast space-time H04H60/00; selective distribution of broadcast services, e.g. multimedia broadcast multicast service [MBMS], H04W4/06)
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H04L65/612 3 for unicast
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H04L65/613 3 for the control of the source by the destination (control signals issued by the client directed to the server or network components specially adapted for selective content distribution H04N21/637)
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H04L65/65 2 Network streaming protocols, e.g. real-time transport protocol [RTP] or real-time control protocol [RTCP]
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H04L65/70 2 Media network packetisation
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H04L65/75 2 Media network packet handling
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H04L65/752 3 adapting media to network capabilities
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H04L65/756 3 adapting media to device capabilities
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H04L65/762 3 {at the source (reformatting of additional data in video distribution servers H04N21/2355)}
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H04L65/764 3 {at the destination (reformatting of additional data in video clients H04N21/4355)}
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H04L65/765 3 {intermediate}
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H04L65/80 1 Responding to QoS
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H04L67/00 0 Network arrangements or protocols for supporting network services or applications (user-to-user messaging H04L51/00; network arrangements, protocols or services for supporting real-time applications in data packet communications networks H04L65/00)
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H04L67/01 1 Protocols
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H04L67/02 2 based on web technology, e.g. hypertext transfer protocol [HTTP]
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H04L67/025 3 for remote control or remote monitoring of applications
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H04L67/04 2 specially adapted for terminals or networks with limited capabilities; specially adapted for terminal portability
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H04L67/06 2 specially adapted for file transfer, e.g. file transfer protocol [FTP]
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H04L67/08 2 specially adapted for terminal emulation, e.g. Telnet
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H04L67/10 2 in which an application is distributed across nodes in the network (software deployment G06F8/60; multiprogramming arrangements G06F9/46)
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H04L67/1001 3 for accessing one among a plurality of replicated servers
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H04L67/10015 4 {Access to distributed or replicated servers, e.g. using brokers}
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H04L67/1004 4 Server selection for load balancing
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H04L67/1006 5 with static server selection, e.g. the same server being selected for a specific client
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H04L67/1008 5 based on parameters of servers, e.g. available memory or workload (monitoring of computer activity G06F11/30)
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H04L67/101 5 based on network conditions
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H04L67/1012 5 based on compliance of requirements or conditions with available server resources
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H04L67/1014 5 based on the content of a request
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H04L67/1017 5 based on a round robin mechanism
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H04L67/1019 5 Random or heuristic server selection
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H04L67/1021 5 based on client or server locations
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H04L67/1023 5 based on a hash applied to IP addresses or costs
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H04L67/1025 5 Dynamic adaptation of the criteria on which the server selection is based
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H04L67/1027 4 Persistence of sessions during load balancing
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H04L67/1029 4 using data related to the state of servers by a load balancer
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H04L67/1031 4 Controlling of the operation of servers by a load balancer, e.g. adding or removing servers that serve requests
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H04L67/1034 4 Reaction to server failures by a load balancer
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H04L67/1036 4 Load balancing of requests to servers for services different from user content provisioning, e.g. load balancing across domain name servers
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H04L67/1038 4 Load balancing arrangements to avoid a single path through a load balancer
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H04L67/104 3 Peer-to-peer [P2P] networks
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H04L67/1042 4 using topology management mechanisms
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H04L67/1044 4 {Group management mechanisms (management of multicast group membership H04L12/185; reconfiguring of node membership in a computing system to eliminate errors G06F11/1425)}
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H04L67/1046 5 {Joining mechanisms}
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H04L67/1048 5 {Departure or maintenance mechanisms}
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H04L67/1051 5 {Group master selection mechanisms}
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H04L67/1053 5 {with pre-configuration of logical or physical connections with a determined number of other peers}
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H04L67/1055 6 {involving connection limits (involving dynamic management of active down- or uploading connections H04L67/1085)}
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H04L67/1057 6 {involving pre-assessment of levels of reputation of peers}
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H04L67/1059 4 {Inter-group management mechanisms, e.g. splitting, merging or interconnection of groups}
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H04L67/1061 4 using node-based peer discovery mechanisms (static access to replicated servers H04L67/1006; service discovery H04L67/51)
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H04L67/1063 5 {Discovery through centralising entities}
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H04L67/1065 5 {Discovery involving distributed pre-established resource-based relationships among peers, e.g. based on distributed hash tables [DHT] (pre-configuration of logical or physical connections H04L67/1053)}
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H04L67/1068 5 {Discovery involving direct consultation or announcement among potential requesting and potential source peers}
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H04L67/107 6 {with limitation or expansion of the discovery scope}
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H04L67/1072 5 {Discovery involving ranked list compilation of candidate peers}
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H04L67/1074 4 for supporting data block transmission mechanisms (file transfer H04L67/06)
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H04L67/1076 5 {Resource dissemination mechanisms or network resource keeping policies for optimal resource availability in the overlay network}
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H04L67/1078 5 {Resource delivery mechanisms}
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H04L67/108 6 {characterised by resources being split in blocks or fragments}
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H04L67/1082 6 {involving incentive schemes}
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H04L67/1085 6 {involving dynamic management of active down- or uploading connections}
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H04L67/1087 4 using cross-functional networking aspects
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H04L67/1089 5 {Hierarchical topologies}
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H04L67/1091 5 {Interfacing with client-server systems or between P2P systems}
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H04L67/1093 5 {Some peer nodes performing special functions}
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H04L67/1095 3 Replication or mirroring of data, e.g. scheduling or transport for data synchronisation between network nodes
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H04L67/1097 3 for distributed storage of data in networks, e.g. transport arrangements for network file system [NFS], storage area networks [SAN] or network attached storage [NAS]
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H04L67/12 2 specially adapted for proprietary or special-purpose networking environments, e.g. medical networks, sensor networks, networks in vehicles or remote metering networks
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H04L67/125 3 involving control of end-device applications over a network
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H04L67/131 2 Protocols for games, networked simulations or virtual reality
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H04L67/133 2 Protocols for remote procedure calls [RPC]
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H04L67/1396 2 specially adapted for monitoring users' activity
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H04L67/14 1 Session management (for real-time applications in data packet communications networks H04L65/1066)
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H04L67/141 2 Setup of application sessions (admission control or resource allocation in data switching networks H04L47/70)
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H04L67/142 2 Managing session states for stateless protocols; Signalling session states; State transitions; Keeping-state mechanisms
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H04L67/143 2 Termination or inactivation of sessions, e.g. event-controlled end of session
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H04L67/145 3 avoiding end of session, e.g. keep-alive, heartbeats, resumption message or wake-up for inactive or interrupted session
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H04L67/146 2 Markers for unambiguous identification of a particular session, e.g. session cookie or URL-encoding
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H04L67/147 2 Signalling methods or messages providing extensions to protocols defined by standardisation
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H04L67/148 2 Migration or transfer of sessions
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H04L67/2866 1 Architectures; Arrangements
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H04L67/2869 2 Terminals specially adapted for communication
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H04L67/2871 2 Implementation details of single intermediate entities
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H04L67/2876 2 Pairs of inter-processing entities at each side of the network, e.g. split proxies
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H04L67/288 2 Distributed intermediate devices, i.e. intermediate devices for interaction with other intermediate devices on the same level
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H04L67/2885 2 Hierarchically arranged intermediate devices, e.g. for hierarchical caching
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H04L67/289 2 Intermediate processing functionally located close to the data consumer application, e.g. in same machine, in same home or in same sub-network
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H04L67/2895 2 Intermediate processing functionally located close to the data provider application, e.g. reverse proxies
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H04L67/30 2 Profiles
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H04L67/303 3 Terminal profiles
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H04L67/306 3 User profiles
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H04L67/34 1 {involving the movement of software or configuration parameters (network booting or remote initial program loading [RIPL] G06F9/4416)}
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H04L67/50 1 Network services
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H04L67/51 2 Discovery or management thereof, e.g. service location protocol [SLP] or web services
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H04L67/52 2 specially adapted for the location of the user terminal
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H04L67/53 2 using third party service providers
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H04L67/535 2 {Tracking the activity of the user (network monitoring arrangements H04L43/00; recording of computer activity G06F11/34)}
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H04L67/54 2 Presence management, e.g. monitoring or registration for receipt of user log-on information, or the connection status of the users
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H04L67/55 2 Push-based network services
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H04L67/56 2 Provisioning of proxy services (store-and-forward switching systems in data switching networks H04L12/54)
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H04L67/561 3 Adding application-functional data or data for application control, e.g. adding metadata
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H04L67/562 3 Brokering proxy services
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H04L67/563 3 Data redirection of data network streams
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H04L67/564 3 Enhancement of application control based on intercepted application data
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H04L67/565 3 Conversion or adaptation of application format or content (adding application control or application functional data H04L67/561)
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H04L67/5651 4 Reducing the amount or size of exchanged application data
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H04L67/566 3 Grouping or aggregating service requests, e.g. for unified processing
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H04L67/567 3 Integrating service provisioning from a plurality of service providers
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H04L67/568 3 Storing data temporarily at an intermediate stage, e.g. caching
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H04L67/5681 4 Pre-fetching or pre-delivering data based on network characteristics
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H04L67/5682 4 Policies or rules for updating, deleting or replacing the stored data
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H04L67/5683 4 Storage of data provided by user terminals, i.e. reverse caching
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H04L67/59 3 Providing operational support to end devices by off-loading in the network or by emulation, e.g. when they are unavailable
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H04L67/60 2 Scheduling or organising the servicing of application requests, e.g. requests for application data transmissions using the analysis and optimisation of the required network resources (admission control or resource allocation H04L47/70)
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H04L67/61 3 taking into account QoS or priority requirements
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H04L67/62 3 Establishing a time schedule for servicing the requests
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H04L67/63 3 Routing a service request depending on the request content or context
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H04L67/75 2 Indicating network or usage conditions on the user display
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H04L69/00 0 Network arrangements, protocols or services independent of the application payload and not provided for in the other groups of this subclass (networks security protocols H04L9/40; wireless communication networks H04W)
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H04L69/02 1 {Protocol performance}
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H04L69/03 1 {Protocol definition or specification (protocol conformance testing H04L1/244)}
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H04L69/04 1 Protocols for data compression, e.g. ROHC
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H04L69/06 1 Notations for structuring of protocol data, e.g. abstract syntax notation one [ASN.1]
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H04L69/08 1 Protocols for interworking; Protocol conversion
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H04L69/085 2 specially adapted for interworking of IP-based networks with other networks
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H04L69/10 1 Streamlined, light-weight or high-speed protocols, e.g. express transfer protocol [XTP] or byte stream
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H04L69/12 1 Protocol engines
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H04L69/14 1 Multichannel or multilink protocols
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H04L69/16 1 Implementation or adaptation of Internet protocol [IP], of transmission control protocol [TCP] or of user datagram protocol [UDP]
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H04L69/161 2 {Implementation details of TCP/IP or UDP/IP stack architecture; Specification of modified or new header fields}
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H04L69/162 3 {involving adaptations of sockets based mechanisms (secure socket layer H04L63/168)}
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H04L69/163 2 In-band adaptation of TCP data exchange; In-band control procedures
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H04L69/164 2 Adaptation or special uses of UDP protocol
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H04L69/165 2 Combined use of TCP and UDP protocols; selection criteria therefor
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H04L69/166 2 IP fragmentation; TCP segmentation
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H04L69/167 2 Adaptation for transition between two IP versions, e.g. between IPv4 and IPv6 (translation of Internet protocol [IP] addresses H04L61/2503)
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H04L69/168 2 specially adapted for link layer protocols, e.g. asynchronous transfer mode [ATM], synchronous optical network [SONET] or point-to-point protocol [PPP]
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H04L69/169 2 {Special adaptations of TCP, UDP or IP for interworking of IP based networks with other networks (protocols for interworking, protocol conversion H04L69/08)}
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H04L69/18 1 Multiprotocol handlers, e.g. single devices capable of handling multiple protocols
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H04L69/22 1 Parsing or analysis of headers
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H04L69/24 1 Negotiation of communication capabilities
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H04L69/26 1 {Special purpose or proprietary protocols or architectures (network applications for proprietary or special purpose networking environments H04L67/12)}
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H04L69/28 1 Timers or timing mechanisms used in protocols
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H04L69/30 1 Definitions, standards or architectural aspects of layered protocol stacks
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H04L69/32 2 Architecture of open systems interconnection [OSI] 7-layer type protocol stacks, e.g. the interfaces between the data link level and the physical level
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H04L69/321 3 Interlayer communication protocols or service data unit [SDU] definitions; Interfaces between layers
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H04L69/322 3 Intralayer communication protocols among peer entities or protocol data unit [PDU] definitions
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H04L69/323 4 in the physical layer [OSI layer 1]
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H04L69/324 4 in the data link layer [OSI layer 2], e.g. HDLC
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H04L69/325 4 in the network layer [OSI layer 3], e.g. X.25 (H04L69/16 takes precedence)
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H04L69/326 4 in the transport layer [OSI layer 4] (H04L69/16 takes precedence)
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H04L69/327 4 in the session layer [OSI layer 5]
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H04L69/328 4 in the presentation layer [OSI layer 6]
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H04L69/329 4 in the application layer [OSI layer 7]
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H04L69/40 1 for recovering from a failure of a protocol instance or entity, e.g. service redundancy protocols, protocol state redundancy or protocol service redirection (management of faults, events, alarms or notifications in data switching networks H04L41/06)
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H04L2101/00 0 Indexing scheme associated with group H04L61/00
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H04L2101/30 1 Types of network names
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H04L2101/32 2 containing non-Latin characters, e.g. Chinese domain names
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H04L2101/33 2 containing protocol addresses or telephone numbers
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H04L2101/345 2 containing wildcard characters
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H04L2101/35 2 containing special prefixes
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H04L2101/355 2 containing special suffixes
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H04L2101/365 2 Application layer names, e.g. buddy names, unstructured names chosen by a user or home appliance name
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H04L2101/37 2 E-mail addresses
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H04L2101/375 2 Access point names [APN]
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H04L2101/38 2 Telephone uniform resource identifier [URI]
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H04L2101/385 2 Uniform resource identifier for session initiation protocol [SIP URI]
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H04L2101/39 2 Globally routable user-agent uniform resource identifier [GRUU] for the session initiation protocol [SIP]
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H04L2101/395 2 Internet protocol multimedia private identity [IMPI]; Internet protocol multimedia public identity [IMPU]
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H04L2101/60 1 Types of network addresses
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H04L2101/604 2 Address structures or formats
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H04L2101/618 2 Details of network addresses
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H04L2101/622 3 Layer-2 addresses, e.g. medium access control [MAC] addresses
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H04L2101/627 3 Controller area network [CAN] identifiers
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H04L2101/631 3 Small computer system interface [SCSI] addresses
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H04L2101/636 3 IEEE1394 identification numbers
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H04L2101/64 3 Asynchronous transfer mode [ATM] addresses
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H04L2101/645 3 Fibre channel identifiers
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H04L2101/65 3 Telephone numbers
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H04L2101/654 3 International mobile subscriber identity [IMSI] numbers
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H04L2101/659 3 Internet protocol version 6 [IPv6] addresses
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H04L2101/663 3 Transport layer addresses, e.g. aspects of transmission control protocol [TCP] or user datagram protocol [UDP] ports
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H04L2101/668 2 Internet protocol [IP] address subnets
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H04L2101/672 2 Short addresses
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H04L2101/677 2 Multiple interfaces, e.g. multihomed nodes
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H04L2101/681 2 using addresses for wireless personal area networks or wireless sensor networks, e.g. Zigbee addresses
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H04L2101/686 2 using dual-stack hosts, e.g. in Internet protocol version 4 [IPv4]/Internet protocol version 6 [IPv6] networks
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H04L2101/69 2 using geographic information, e.g. room number
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H04L2101/695 2 using masks or ranges of addresses
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H04L2201/00 0 Algorithms used for the adjustment of time-domain equalizers
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H04L2201/02 1 minimizing an error signal, e.g. least squares, minimum square error
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H04L2201/04 1 zero-forcing
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H04L2201/06 1 using the output of a maximum likelihood decoder (Viterbi detector)
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H04L2201/08 1 Algorithms not covered by groups H04L2201/02 - H04L2201/06
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H04L2203/00 0 Characteristics of phase shift key signals
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H04L2203/02 1 differential
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H04L2203/04 1 continuous phase
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H04L2209/00 0 Additional information or applications relating to cryptographic mechanisms or cryptographic arrangements for secret or secure communication H04L9/00
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H04L2209/04 1 Masking or blinding
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H04L2209/043 2 of tables, e.g. lookup, substitution or mapping
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H04L2209/046 2 of operations, operands or results of the operations
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H04L2209/08 1 Randomization, e.g. dummy operations or using noise
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H04L2209/12 1 Details relating to cryptographic hardware or logic circuitry
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H04L2209/122 2 Hardware reduction or efficient architectures
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H04L2209/125 2 Parallelization or pipelining, e.g. for accelerating processing of cryptographic operations
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H04L2209/127 2 Trusted platform modules [TPM]
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H04L2209/16 1 Obfuscation or hiding, e.g. involving white box
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H04L2209/20 1 Manipulating the length of blocks of bits, e.g. padding or block truncation
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H04L2209/24 1 Key scheduling, i.e. generating round keys or sub-keys for block encryption
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H04L2209/26 1 Testing cryptographic entity, e.g. testing integrity of encryption key or encryption algorithm
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H04L2209/30 1 Compression, e.g. Merkle-Damgard construction
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H04L2209/34 1 Encoding or coding, e.g. Huffman coding or error correction
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H04L2209/42 1 Anonymization, e.g. involving pseudonyms
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H04L2209/46 1 Secure multiparty computation, e.g. millionaire problem
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H04L2209/463 2 Electronic voting
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H04L2209/466 2 Electronic auction
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H04L2209/50 1 Oblivious transfer
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H04L2209/56 1 Financial cryptography, e.g. electronic payment or e-cash
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H04L2209/60 1 Digital content management, e.g. content distribution
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H04L2209/601 2 Broadcast encryption
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H04L2209/603 2 Digital right managament [DRM]
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H04L2209/605 2 Copy protection
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H04L2209/606 2 Traitor tracing
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H04L2209/608 2 Watermarking
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H04L2209/64 1 Self-signed certificates
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H04L2209/68 1 Special signature format, e.g. XML format
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H04L2209/72 1 Signcrypting, i.e. digital signing and encrypting simultaneously
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H04L2209/76 1 Proxy, i.e. using intermediary entity to perform cryptographic operations (network architectures or network communication protocols using hop-by-hop encryption H04L63/0464)
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H04L2209/80 1 Wireless (network architectures or network communication protocols for wireless network security H04W12/00)
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H04L2209/805 2 Lightweight hardware, e.g. radio-frequency identification [RFID] or sensor
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H04L2209/84 1 Vehicles
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H04L2209/88 1 Medical equipments
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H04L2212/00 0 Encapsulation of packets
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H04L2463/00 0 Additional details relating to network architectures or network communication protocols for network security covered by H04L63/00
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H04L2463/041 1 using an encryption or decryption engine integrated in transmitted data
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H04L2463/061 1 applying further key derivation, e.g. deriving traffic keys from a pair-wise master key (cryptographic mechanisms or cryptographic arrangements for generation of secret information including derivation or calculation of cryptographic keys or passwords H04L9/0861)
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H04L2463/062 1 applying encryption of the keys (cryptographic mechanisms or cryptographic arrangements for key distribution using key encryption key H04L9/0822)
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H04L2463/081 1 applying self-generating credentials, e.g. instead of receiving credentials from an authority or from another peer, the credentials are generated at the entity itself (cryptographic mechanisms or cryptographic arrangements for generation of secret information including derivation or calculation of cryptographic keys or passwords H04L9/0861)
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H04L2463/082 1 applying multi-factor authentication (cryptographic mechanisms or cryptographic arrangements including means for verifying the identity or authority of a user of the system or for message authentication H04L9/32)
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H04L2463/101 1 applying security measures for digital rights management (data processing systems or methods, specially adapted for commerce, e.g. marketing, shopping, billing, auctions or e-commerce G06Q30/00)
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H04L2463/102 1 applying security measure for e-commerce (data processing systems or methods, specially adapted for e-commerce G06Q30/00)
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H04L2463/103 1 applying security measure for protecting copy right (protecting software against unauthorised usage in a vending or licensing environment, e.g. protection the software providers copyright G06F21/10; data processing systems or methods, specially adapted for payment schemes, architectures or protocols G06Q20/00; secrecy systems or subscription systems H04N7/16)
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H04L2463/121 1 Timestamp (cryptographic mechanisms or cryptographic arrangements involving time stamps H04L9/3297)
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H04L2463/141 1 Denial of service attacks against endpoints in a network
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H04L2463/142 1 Denial of service attacks against network infrastructure
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H04L2463/143 1 Denial of service attacks involving systematic or selective dropping of packets
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H04L2463/144 1 Detection or countermeasures against botnets
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H04L2463/145 1 Detection or countermeasures against cache poisoning
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H04L2463/146 1 Tracing the source of attacks
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H04M TELEPHONIC COMMUNICATION (circuits for controlling other apparatus via a telephone cable and not involving telephone switching apparatus G08)
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H04M1/00 0 Substation equipment, e.g. for use by subscribers (subscriber services or facilities provided at exchanges H04M3/00; prepayment telephone coin boxes H04M17/00; current supply arrangements H04M19/08)
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H04M1/003 1 {Telephone sets using electrooptical means in the transmission path}
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H04M1/006 1 {Call diverting means}
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H04M1/02 1 Constructional features of telephone sets
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H04M1/0202 2 {Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets (constructional features of telephone transmitters or receivers, e.g. of speakers or microphones H04M1/03)}
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H04M1/0206 3 {Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings}
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H04M1/0208 4 {characterized by the relative motions of the body parts}
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H04M1/021 5 {using combined folding and rotation motions (combined with translation movement H04M1/0235)}
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H04M1/0212 6 {with a two degrees of freedom mechanism, i.e. folding around a first axis and rotating around a second axis perpendicular to the first}
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H04M1/0214 5 {Foldable telephones, i.e. with body parts pivoting to an open position around an axis parallel to the plane they define in closed position (combined with translation movement H04M1/0235)}
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H04M1/0216 6 {Foldable in one direction, i.e. using a one degree of freedom hinge}
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H04M1/0218 7 {The hinge comprising input and/or output user interface means}
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H04M1/022 7 {The hinge comprising two parallel pivoting axes}
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H04M1/0222 6 {Foldable in two directions, i.e. using a two degree of freedom hinge}
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H04M1/0225 5 {Rotatable telephones, i.e. the body parts pivoting to an open position around an axis perpendicular to the plane they define in closed position (combined with translation movement H04M1/0235)}
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H04M1/0227 6 {Rotatable in one plane, i.e. using a one degree of freedom hinge}
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H04M1/0229 7 {The hinge comprising input and/or output user interface means}
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H04M1/0231 6 {Including a rotatable keypad body part}
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H04M1/0233 6 {Including a rotatable display body part}
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H04M1/0235 5 {Slidable or telescopic telephones, i.e. with a relative translation movement of the body parts; Telephones using a combination of translation and other relative motions of the body parts}
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H04M1/0237 6 {Sliding mechanism with one degree of freedom}
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H04M1/0239 6 {Sliding mechanism with two degree of freedom, e.g. translation in two different directions}
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H04M1/0241 4 {using relative motion of the body parts to change the operational status of the telephone set, e.g. switching on/off, answering incoming call}
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H04M1/0243 5 {using the relative angle between housings}
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H04M1/0245 5 {using open/close detection}
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H04M1/0247 4 {comprising more than two body parts}
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H04M1/0249 3 {Details of the mechanical connection between the housing parts or relating to the method of assembly}
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H04M1/0252 4 {by means of a snap-on mechanism}
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H04M1/0254 3 {comprising one or a plurality of mechanically detachable modules}
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H04M1/0256 4 {wherein the modules are operable in the detached state, e.g. one module for the user interface and one module for the transceiver}
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H04M1/0258 4 {for a headset device}
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H04M1/026 3 {Details of the structure or mounting of specific components}
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H04M1/0262 4 {for a battery compartment}
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H04M1/0264 4 {for a camera module assembly}
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H04M1/0266 4 {for a display module assembly}
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H04M1/0268 5 {including a flexible display panel}
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H04M1/0269 6 {mounted in a fixed curved configuration, e.g. display curved around the edges of the telephone housing}
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H04M1/027 5 {including magnifying means}
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H04M1/0272 4 {for a projector or beamer module assembly (constructional features of projectors per se G03B21/00; constructional details of projectors using electronic spatial light modulators per se H04N9/31)}
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H04M1/0274 4 {for an electrical connector module}
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H04M1/0277 4 {for a printed circuit board assembly}
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H04M1/0279 3 {Improving the user comfort or ergonomics}
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H04M1/0281 4 {for providing single handed use or left/right hand conversion}
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H04M1/0283 4 {for providing a decorative aspect, e.g. customization of casings, exchangeable faceplate}
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H04M1/0285 4 {Pen-type handsets}
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H04M1/0287 3 {being disposable or recyclable}
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H04M1/0289 2 {Telephone sets for operators}
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H04M1/0291 2 {Door telephones}
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H04M1/0293 2 {Terminal boxes for telephone sets}
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H04M1/0295 2 {Mechanical mounting details of display modules}
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H04M1/0297 2 {Telephone sets adapted to be mounted on a desk or on a wall}
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H04M1/03 2 Constructional features of telephone transmitters or receivers, e.g. telephone hand-sets
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H04M1/035 3 {Improving the acoustic characteristics by means of constructional features of the housing, e.g. ribs, walls, resonating chambers or cavities}
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H04M1/04 2 Supports for telephone transmitters or receivers
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H04M1/05 3 specially adapted for use on head, throat or breast
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H04M1/06 3 Hooks; Cradles
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H04M1/08 4 associated with switches operated by the weight of the receiver or hand-set
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H04M1/10 4 associated with switches operated by magnetic effect due to proximity of receiver or hand-set
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H04M1/11 2 Supports for sets, e.g. incorporating armrests
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H04M1/12 3 Adjustable supports, e.g. extensible
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H04M1/13 4 pantographic
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H04M1/14 3 with resilient means to eliminate extraneous vibrations
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H04M1/15 2 Protecting or guiding telephone cords
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H04M1/17 2 Hygienic or sanitary devices on telephone equipment (for mouthpieces or earpieces H04R1/12)
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H04M1/18 2 Telephone sets specially adapted for use in ships, mines, or other places exposed to adverse environment (H04M1/19 takes precedence)
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H04M1/185 3 {Improving the rigidity of the casing or resistance to shocks}
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H04M1/19 2 Arrangements of transmitters, receivers, or complete sets to prevent eavesdropping, to attenuate local noise or to prevent undesired transmission; Mouthpieces or receivers specially adapted therefor (circuit arrangements for preventing eavesdropping H04M1/68; telephone cabinets E04H1/14)
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H04M1/20 2 Arrangements for preventing acoustic feed-back (H04M1/62 takes precedence)
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H04M1/21 2 Combinations with auxiliary equipment, e.g. with clocks or memoranda pads
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H04M1/215 3 by non-intrusive coupling means, e.g. acoustic couplers
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H04M1/2155 4 {Acoustic coupling}
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H04M1/22 2 Illumination; Arrangements for improving the visibility of characters on dials
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H04M1/23 2 Construction or mounting of dials or of equivalent devices; Means for facilitating the use thereof (by improving visibility H04M1/22)
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H04M1/233 3 {including a pointing device, e.g. roller key, track ball, rocker switch or joystick (constructional details of pointing devices per se G06F3/033)}
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H04M1/236 3 {including keys on side or rear faces}
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H04M1/24 1 Arrangements for testing
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H04M1/247 1 Telephone sets including user guidance or feature selection means facilitating their use (user interfaces specially adapted for cordless or mobile telephones H04M1/724)
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H04M1/2471 2 {Configurable and interactive telephone terminals with subscriber controlled features modifications, e.g. with ADSI capability [Analog Display Services Interface] (systems providing special services or facilities to subscribers H04M3/42; administration or customization of services H04M3/42136; by downloading data to substation equipment H04M3/42178)}
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H04M1/2472 3 {with programmable function keys}
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H04M1/2473 2 {Telephone terminals interfacing a personal computer, e.g. using an API (Application Programming Interface) (details of API H04M7/0021)}
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H04M1/2474 2 {Telephone terminals specially adapted for disabled people (user interfaces for cordless or mobile telephones specially adapted for disabled users H04M1/72475; network based special services or facilities for hearing-impaired persons H04M3/42391; devices for conversing with the deaf-blind G09B21/04)}
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H04M1/2475 3 {for a hearing impaired user}
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H04M1/2476 3 {for a visually impaired user (illuminating or arrangements for improving visibility of characters on dials H04M1/22)}
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H04M1/2477 2 {for selecting a function from a menu display (H04M1/2474 takes precedence)}
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H04M1/2478 2 {Telephone terminals specially adapted for non-voice services, e.g. email, internet access (centralized arrangements where telephones services are combined H04M7/0024; for recording text messages H04M3/5322; for accessing Internet H04M3/4938)}
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H04M1/253 1 Telephone sets using digital voice transmission
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H04M1/2535 2 {adapted for voice communication over an Internet Protocol [IP] network (Voice over Internet Protocol (VoIP) network equipment and services H04M7/006; implementation or adaptation of Internet protocol [IP], of transmission control protocol [TCP] or of user datagram protocol [UDP] H04L69/16)}
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H04M1/26 1 Devices for calling a subscriber (H04M1/66 takes precedence)
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H04M1/27 2 Devices whereby a plurality of signals may be stored simultaneously
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H04M1/271 3 {controlled by voice recognition}
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H04M1/272 3 with provision for storing only one subscriber number at a time, e.g. by keyboard or dial
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H04M1/2725 4 {using electronic memories}
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H04M1/274 3 with provision for storing more than one subscriber number at a time {, e.g. using toothed disc}
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H04M1/2745 4 using static electronic memories, e.g. chips
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H04M1/27453 5 Directories allowing storage of additional subscriber data, e.g. metadata
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H04M1/27457 6 Management thereof, e.g. manual editing of data
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H04M1/2746 6 Sorting, e.g. according to history or frequency of use
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H04M1/27463 5 {Predictive input, predictive dialling by comparing the dialled sequence with the content of a telephone directory}
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H04M1/27467 5 Methods of retrieving data
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H04M1/2747 6 Scrolling on a display
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H04M1/27475 6 using interactive graphical means or pictorial representations
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H04M1/2748 6 by matching character strings
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H04M1/27485 5 Appending a prefix to or inserting a pause into a dialling sequence
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H04M1/2749 5 Automatic dialling or redialling systems, e.g. on off-hook or redial on busy
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H04M1/27495 5 implemented by means of discrete electronic components, i.e. neither programmable nor microprocessor-controlled (H04M1/27457-H04M1/2749 take precedence)
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H04M1/275 5 implemented by means of portable electronic directories
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H04M1/2753 5 providing data content
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H04M1/2755 6 by optical scanning
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H04M1/2757 6 by data transmission, e.g. downloading
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H04M1/276 4 using magnetic recording, e.g. on tape
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H04M1/2765 5 {implemented by means of portable magnetic cards}
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H04M1/278 4 using punched cards or tapes
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H04M1/30 2 Devices which can set up and transmit only one digit at a time
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H04M1/31 3 by interrupting current to generate trains of pulses; by periodically opening and closing contacts to generate trains of pulses
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H04M1/312 4 {pulses produced by electronic circuits}
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H04M1/315 4 Clutches; Spring assemblies; Speed regulators, e.g. centrifugal brakes (H04M1/32 – H04M1/40 take precedence)
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H04M1/32 4 Locking setting devices during transmission to prevent interference by user
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H04M1/34 4 Lost-motion or other arrangements for ensuring a pause between successive digit transmissions
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H04M1/38 4 Pulses transmitted by a movement variably limited by the setting of a stop
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H04M1/40 4 wherein the setting-operation short-circuits or open-circuits the transmitting mechanism during a variable part of a cycle
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H04M1/50 3 by generating or selecting currents of predetermined frequencies or combinations of frequencies
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H04M1/505 4 {signals generated in digital form}
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H04M1/515 2 by generating or selecting signals other than trains of pulses of similar shape, or signals other than currents of one or more different frequencies, e.g. generation of dc signals of alternating polarity, coded pulses or impedance dialling
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H04M1/52 2 Arrangements wherein a dial or the like is mechanically coupled to a line selector
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H04M1/53 2 Generation of additional signals, e.g. additional pulses
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H04M1/54 3 Arrangements wherein a dial or the like generates identifying signals, e.g. in party-line systems
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H04M1/56 1 Arrangements for indicating or recording the called number at the calling subscriber's set
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H04M1/57 1 Arrangements for indicating or recording the number of the calling subscriber at the called subscriber's set (at the operator set in a manual exchange H04M5/20)
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H04M1/571 2 {Blocking transmission of caller identification to called party}
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H04M1/573 2 {Line monitoring circuits for detecting caller identification}
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H04M1/575 2 {Means for retrieving and displaying personal data about calling party}
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H04M1/576 3 {associated with a pictorial or graphical representation}
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H04M1/578 3 {associated with a synthesized vocal announcement}
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H04M1/58 1 Anti-side-tone circuits
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H04M1/585 2 {implemented without inductive element}
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H04M1/60 1 including speech amplifiers
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H04M1/6008 2 {in the transmitter circuit}
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H04M1/6016 2 {in the receiver circuit}
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H04M1/6025 2 {implemented as integrated speech networks}
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H04M1/6033 2 {for providing handsfree use or a loudspeaker mode in telephone sets (arrangements for preventing acoustic echo H04M9/08)}
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H04M1/6041 3 {Portable telephones adapted for handsfree use}
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H04M1/605 4 {involving control of the receiver volume to provide a dual operational mode at close or far distance from the user}
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H04M1/6058 4 {involving the use of a headset accessory device connected to the portable telephone}
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H04M1/6066 5 {including a wireless connection}
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H04M1/6075 4 {adapted for handsfree use in a vehicle (H04M1/6058 takes precedence; arrangements for holding telephones in a vehicle B60R11/0241)}
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H04M1/6083 5 {by interfacing with the vehicle audio system}
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H04M1/6091 6 {including a wireless interface}
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H04M1/62 2 Constructional arrangements
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H04M1/64 1 Automatic arrangements for answering calls; Automatic arrangements for recording messages for absent subscribers; Arrangements for recording conversations (centralised dictation systems H04M11/10)
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H04M1/642 2 {storing speech in digital form}
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H04M1/645 3 {with speech synthesis}
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H04M1/647 2 {using magnetic tape (H04M1/642 takes precedence)}
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H04M1/65 2 Recording arrangements {for recording a message from the calling party (in the exchange H04M3/50)}
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H04M1/6505 3 {storing speech in digital form}
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H04M1/651 4 {with speech synthesis}
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H04M1/6515 3 {using magnetic tape (H04M1/6505 takes precedence)}
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H04M1/652 3 Means for playing back the recorded messages by remote control over a telephone line (H04M1/658 takes precedence)
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H04M1/654 3 Telephone line monitoring circuits therefor, e.g. ring detectors
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H04M1/6545 4 {mechanically actuating hook switch, e.g. lifting handset}
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H04M1/656 3 for recording conversations
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H04M1/658 3 Means for redirecting recorded messages to other extensions or equipment
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H04M1/66 1 with means for preventing unauthorised or fraudulent calling (verifying user identity or authority in secret or secure digital communications H04L9/32)
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H04M1/663 2 Preventing unauthorised calls to a telephone set
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H04M1/665 3 by checking the validity of a code
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H04M1/667 2 Preventing unauthorised calls from a telephone set (H04M1/677 takes precedence)
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H04M1/67 3 by electronic means
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H04M1/673 4 the user being required to key in a code
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H04M1/675 4 the user being required to insert a coded card, e.g. a smart card carrying an integrated circuit chip
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H04M1/677 2 Preventing the dialling or sending of predetermined telephone numbers or selected types of telephone numbers, e.g. long distance numbers
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H04M1/6775 3 {by providing access to preprogrammed keys}
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H04M1/68 1 Circuit arrangements for preventing eavesdropping
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H04M1/70 2 Lock-out or secrecy arrangements in party-line systems
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H04M1/71 1 Substation extension arrangements
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H04M1/715 2 using two or more extensions per line (cordless telephones H04M1/725)
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H04M1/72 1 Mobile telephones; Cordless telephones, i.e. devices for establishing wireless links to base stations without route selection
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H04M1/724 2 User interfaces specially adapted for cordless or mobile telephones
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H04M1/72403 3 with means for local support of applications that increase the functionality
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H04M1/72406 4 by software upgrading or downloading
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H04M1/72409 4 by interfacing with external accessories (hands-free H04M1/60)
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H04M1/724092 5 {Interfacing with an external cover providing additional functionalities}
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H04M1/724094 5 {Interfacing with a device worn on the user's body to provide access to telephonic functionalities, e.g. accepting a call, reading or composing a message}
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H04M1/724095 6 {Worn on the wrist, hand or arm}
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H04M1/724097 6 {Worn on the head}
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H04M1/724098 5 {Interfacing with an on-board device of a vehicle (for hands-free speaking in vehicles H04M1/6075)}
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H04M1/72412 5 using two-way short-range wireless interfaces
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H04M1/72415 5 for remote control of appliances
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H04M1/72418 4 for supporting emergency services
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H04M1/72421 5 with automatic activation of emergency service functions, e.g. upon sensing an alarm
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H04M1/72424 5 with manual activation of emergency-service functions
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H04M1/72427 4 for supporting games or graphical animations
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H04M1/7243 4 with interactive means for internal management of messages
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H04M1/72433 5 for voice messaging, e.g. dictaphones (for answering incoming calls H04M1/64)
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H04M1/72436 5 for text messaging, e.g. SMS or e-mail
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H04M1/72439 5 for image or video messaging
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H04M1/72442 4 for playing music files
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H04M1/72445 4 for supporting Internet browser applications
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H04M1/72448 3 with means for adapting the functionality of the device according to specific conditions
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H04M1/72451 4 according to schedules, e.g. using calendar applications
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H04M1/72454 4 according to context-related or environment-related conditions
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H04M1/72457 4 according to geographic location
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H04M1/7246 4 by connection of exchangeable housing parts
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H04M1/72463 4 to restrict the functionality of the device
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H04M1/724631 5 {by limiting the access to the user interface, e.g. locking a touch-screen or a keypad}
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H04M1/724634 6 {With partially locked states, e.g. when some telephonic functional locked states or applications remain accessible in the locked states}
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H04M1/72466 3 with selection means, e.g. keys, having functions defined by the mode or the status of the device
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H04M1/72469 3 for operating the device by selecting functions from two or more displayed items, e.g. menus or icons
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H04M1/72472 4 wherein the items are sorted according to specific criteria, e.g. frequency of use
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H04M1/72475 3 specially adapted for disabled users
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H04M1/72478 4 for hearing-impaired users
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H04M1/72481 4 for visually impaired users
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H04M1/72484 3 wherein functions are triggered by incoming communication events
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H04M1/725 2 Cordless telephones (user interfaces specially adapted therefor H04M1/724)
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H04M1/72502 3 with one base station connected to a single line
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H04M1/72505 4 Radio link set-up procedures
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H04M1/72508 5 using a control channel
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H04M1/72511 5 Searching for available channels
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H04M1/72513 5 On hold, intercom or transfer communication modes
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H04M1/72516 4 with means for out-of-range alerting
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H04M1/727 3 Identification code transfer arrangements
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H04M1/73 3 Battery saving arrangements
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H04M1/733 3 with a plurality of base stations connected to a plurality of lines {(for selection in cordless PBX H04W84/16)}
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H04M1/737 3 Characterised by transmission of electromagnetic waves other than radio waves, e.g. infra-red waves
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H04M1/738 1 Interface circuits for coupling substations to external telephone lines (H04M1/78 takes precedence)
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H04M1/7385 2 {Programmable or microprocessor-controlled}
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H04M1/74 2 with means for reducing interference; with means for reducing effects due to line faults
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H04M1/745 3 {Protection devices or circuits for voltages surges on the line}
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H04M1/76 2 Compensating for differences in line impedance
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H04M1/78 1 Circuit arrangements in which low-frequency speech signals proceed in one direction on the line, while speech signals proceeding in the other direction on the line are modulated on a high-frequency carrier signal
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H04M1/80 1 Telephone line holding circuits
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H04M1/82 1 Line monitoring circuits for call progress or status discrimination {(for detecting caller identity H04M1/573)}
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H04M3/00 0 Automatic or semi-automatic exchanges
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H04M3/002 1 {Applications of echo suppressors or cancellers in telephonic connections (in two-way loud-speaking telephone systems H04M9/08, echo suppressors or cancellers per se H04B3/20)}
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H04M3/005 1 {Interface circuits for subscriber lines (current supply H04M19/00 and subgroups; supervisory, monitoring or testing arrangements H04M3/22 and subgroups; in key telephone systems H04M9/006)}
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H04M3/007 2 {Access interface units for simultaneous transmission of speech and data, e.g. digital subscriber line [DSL] access interface units (DSL access multiplexers H04Q11/0478, and H04L12/2856)}
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H04M3/02 1 Calling substations, e.g. by ringing (selective calling H04Q)
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H04M3/04 2 the calling signal being supplied from the final selector
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H04M3/06 2 the calling signal being supplied from the subscriber's line circuit
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H04M3/08 1 Indicating faults in circuits or apparatus
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H04M3/085 2 {Fault locating arrangements}
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H04M3/10 2 Providing fault- or trouble-signals
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H04M3/12 2 Marking faulty circuits "busy"; Enabling equipment to disengage itself from faulty circuits {; Using redundant circuits; Response of a circuit, apparatus or system to an error}
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H04M3/14 2 Signalling existence of persistent "off-hook" condition
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H04M3/16 1 with lock-out or secrecy provision in party-line systems
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H04M3/18 1 with means for reducing interference {or noise}; with means for reducing effects due to line faults {with means for protecting lines}
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H04M3/20 1 with means for interrupting existing connections; with means for breaking-in on conversations
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H04M3/205 2 {Eavesdropping prevention - indication of insecurity of line or network}
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H04M3/22 1 Arrangements for supervision, monitoring or testing
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H04M3/2209 2 {for lines also used for data transmission}
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H04M3/2218 2 {Call detail recording}
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H04M3/2227 2 {Quality of service monitoring}
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H04M3/2236 2 {Quality of speech transmission monitoring}
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H04M3/2245 2 {Management of the local loop plant}
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H04M3/2254 2 {in networks}
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H04M3/2263 3 {Network management}
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H04M3/2272 2 {Subscriber line supervision circuits, e.g. call detection circuits}
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H04M3/2281 2 {Call monitoring, e.g. for law enforcement purposes; Call tracing; Detection or prevention of malicious calls}
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H04M3/229 2 {Wire identification arrangements; Number assignment determination}
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H04M3/24 2 with provision for checking the normal operation
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H04M3/241 3 {for stored program controlled exchanges}
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H04M3/242 4 {Software testing}
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H04M3/244 3 {for multiplex systems}
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H04M3/245 4 {for ISDN systems}
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H04M3/247 3 {Knowledge-based maintenance systems}
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H04M3/248 3 {for metering arrangements or prepayment telephone systems (metering arrangements per se H04M15/00; prepayment telephone systems per se H04M17/00)}
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H04M3/26 2 with means for applying test signals {or for measuring}
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H04M3/28 3 Automatic routine testing {; Fault testing; Installation testing; Test methods, test equipment or test arrangements therefor}
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H04M3/30 4 for subscriber's lines {, for the local loop}
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H04M3/301 5 {Circuit arrangements at the subscriber's side of the line}
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H04M3/302 5 {using modulation techniques for copper pairs (for ISDN systems H04M3/245; ISDN selection or connection testing arrangements H04Q11/045)}
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H04M3/303 6 {and using PCM multiplexers, e.g. pair gain systems}
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H04M3/304 6 {and using xDSL modems (xDSL line qualification H04M3/306)}
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H04M3/305 5 {testing of physical copper line parameters, e.g. capacitance or resistance (locating faults in cables G01R31/08)}
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H04M3/306 6 {for frequencies above the voice frequency, e.g. xDSL line qualification (test methods, test equipment and test arrangements for subscriber lines using xDSL modems H04M3/304; systems modifying transmission characteristics according to link quality H04L1/0001; monitoring and/or testing of line transmission systems H04B3/46)}
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H04M3/307 5 {using ringback}
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H04M3/308 5 {Craftsperson test terminals}
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H04M3/32 4 for lines between exchanges
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H04M3/323 5 {for the arrangements providing the connection (test connection, test call, call simulation)}
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H04M3/326 5 {for registers and translators}
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H04M3/34 3 Testing for cross-talk
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H04M3/36 2 Statistical metering, e.g. recording occasions when traffic exceeds capacity of trunks
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H04M3/362 3 {Traffic simulation}
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H04M3/365 3 {Load metering of control unit}
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H04M3/367 3 {Traffic or load control}
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H04M3/38 1 Graded-service arrangements, i.e. some subscribers prevented from establishing certain connections (queuing arrangements H04Q3/64)
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H04M3/382 2 {using authorisation codes or passwords}
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H04M3/385 3 {using speech signals}
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H04M3/387 2 {using subscriber identification cards}
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H04M3/40 1 Applications of speech amplifiers
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H04M3/42 1 Systems providing special services or facilities to subscribers (specially adapted for wireless communication networks H04W4/00)
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H04M3/42008 2 {Systems for anonymous communication between parties, e.g. by use of disposal contact identifiers}
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H04M3/42017 2 {Customized ring-back tones}
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H04M3/42025 2 {Calling or Called party identification service}
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H04M3/42034 3 {Calling party identification service}
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H04M3/42042 4 {Notifying the called party of information on the calling party (details within substation equipment H04M1/57, signalling details H04Q3/72)}
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H04M3/42051 5 {where the notification is included in the ringing tone}
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H04M3/42059 4 {Making use of the calling party identifier}
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H04M3/42068 5 {where the identifier is used to access a profile}
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H04M3/42076 5 {where the identifier is a Uniform Resource Locator}
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H04M3/42085 3 {Called party identification service}
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H04M3/42093 4 {Notifying the calling party of information on the called or connected party}
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H04M3/42102 4 {Making use of the called party identifier}
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H04M3/4211 5 {where the identifier is used to access a profile}
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H04M3/42119 5 {where the identifier is a Uniform Resource Locator}
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H04M3/42127 2 {Systems providing several special services or facilities from groups H04M3/42008 - H04M3/58}
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H04M3/42136 2 {Administration or customisation of services}
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H04M3/42144 3 {by service provider}
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H04M3/42153 3 {by subscriber}
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H04M3/42161 4 {via computer interface}
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H04M3/4217 3 {Managing service interactions}
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H04M3/42178 3 {by downloading data to substation equipment}
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H04M3/42187 2 {Lines and connections with preferential service}
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H04M3/42195 2 {Arrangements for calling back a calling subscriber (when the wanted subscriber ceases to be busy H04M3/48)}
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H04M3/42204 2 {Arrangements at the exchange for service or number selection by voice (at the terminal H04M1/27)}
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H04M3/42212 2 {Call pickup (comprising simultaneous alerting H04M3/46)}
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H04M3/42221 2 {Conversation recording systems (at the subscriber's set H04M1/656)}
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H04M3/42229 2 {Personal communication services, i.e. services related to one subscriber independent of his terminal and/or location (diverting calls from one subscriber to another subscriber, i.e. two different subscriptions H04M3/54; selecting arrangements in intelligent networks H04Q3/005)}
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H04M3/42238 3 {in systems with telephone lines with multiple users}
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H04M3/42246 3 {where the subscriber uses a multi-mode terminal which moves and accesses different networks with at least one network having a wireline access including cordless PBX}
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H04M3/42255 4 {with the subscriber having a personal network-independent number}
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H04M3/42263 3 {where the same subscriber uses different terminals, i.e. nomadism}
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H04M3/42272 4 {whereby the subscriber registers to the terminals for personalised service provision}
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H04M3/4228 2 {in networks}
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H04M3/42289 3 {with carrierprovider selection by subscriber}
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H04M3/42297 3 {with number portability}
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H04M3/42306 3 {Number translation services, e.g. premium-rate, freephone or vanity number services}
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H04M3/42314 2 {in private branch exchanges}
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H04M3/42323 3 {PBX's with CTI arrangements}
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H04M3/42331 3 {Direct inward dialling}
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H04M3/4234 3 {Remote access to features of PBX or home telephone systems-teleworking in a PBX}
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H04M3/42348 2 {Location-based services which utilize the location information of a target}
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H04M3/42357 3 {where the information is provided to a monitoring entity such as a potential calling party or a call processing server}
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H04M3/42365 2 {Presence services providing information on the willingness to communicate or the ability to communicate in terms of media capability or network connectivity}
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H04M3/42374 3 {where the information is provided to a monitoring entity such as a potential calling party or a call processing server}
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H04M3/42382 2 {Text-based messaging services in telephone networks such as PSTN/ISDN, e.g. User-to-User Signalling or Short Message Service for fixed networks}
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H04M3/42391 2 {where the subscribers are hearing-impaired persons, e.g. telephone devices for the deaf}
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H04M3/424 2 Arrangements for automatic redialling (at the subscriber's set H04M1/27)
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H04M3/428 2 Arrangements for placing incoming calls on hold
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H04M3/4281 3 {when the called subscriber is connected to a data network using his telephone line, e.g. dial-up connection, Internet browsing}
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H04M3/4283 3 {Call holding circuits}
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H04M3/4285 3 {Notifying, informing or entertaining a held party while on hold, e.g. Music On Hold}
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H04M3/4286 3 {Notifying a held subscriber when his held call is removed from hold}
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H04M3/4288 3 {Notifying a called subscriber of an incoming call during an ongoing call, e.g. Call Waiting}
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H04M3/432 2 Arrangements for calling a subscriber at a specific time, e.g. morning call service
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H04M3/436 2 Arrangements for screening incoming calls {, i.e. evaluating the characteristics of a call before deciding whether to answer it (based on the calling party profile H04M3/42059; based on location H04M3/42348; based on presence H04M3/42365; diversion H04M3/54)}
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H04M3/4365 3 {based on information specified by the calling party, e.g. priority or subject}
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H04M3/44 2 Additional connecting arrangements for providing access to frequently-wanted subscribers, e.g. abbreviated dialling (at the subscriber's set H04M1/27; automatic redialling H04M3/424)
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H04M3/46 2 Arrangements for calling a number of substations in a predetermined sequence until an answer is obtained
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H04M3/465 3 {Arrangements for simultaneously calling a number of substations until an answer is obtained}
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H04M3/48 2 Arrangements for recalling a calling subscriber when the wanted subscriber ceases to be busy
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H04M3/487 2 Arrangements for providing information services, e.g. recorded voice services or time announcements
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H04M3/4872 3 {Non-interactive information services}
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H04M3/4874 4 {Intercept announcements}
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H04M3/4876 4 {Time announcements}
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H04M3/4878 4 {Advertisement messages}
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H04M3/493 3 Interactive information services, e.g. directory enquiries {; Arrangements therefor, e.g. interactive voice response [IVR] systems or voice portals}
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H04M3/4931 4 {Directory assistance systems}
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H04M3/4933 5 {with operator assistance}
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H04M3/4935 5 {Connection initiated by DAS system}
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H04M3/4936 4 {Speech interaction details (speech recognition per se G10L15/00)}
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H04M3/4938 4 {comprising a voice browser which renders and interprets, e.g. VoiceXML}
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H04M3/50 2 Centralised arrangements for answering calls; Centralised arrangements for recording messages for absent or busy subscribers (H04M3/487 takes precedence; centralised dictation systems H04M11/10); {Centralised arrangements for recording messages}
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H04M3/51 3 Centralised call answering arrangements requiring operator intervention {, e.g. call or contact centers for telemarketing}
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H04M3/5108 4 {Secretarial services}
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H04M3/5116 4 {for emergency applications}
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H04M3/5125 4 {with remote located operators}
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H04M3/5133 4 {Operator terminal details}
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H04M3/5141 4 {Details of processing calls and other types of contacts in an unified manner (unified messaging in packet-switching networks H04L51/56)}
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H04M3/515 4 {Night service systems}
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H04M3/5158 4 {in combination with automated outdialling systems (devices for signalling identity of wanted subscriber H04M1/26)}
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H04M3/5166 4 {in combination with interactive voice response systems or voice portals, e.g. as front-ends}
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H04M3/5175 4 {Call or contact centers supervision arrangements}
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H04M3/5183 4 {Call or contact centers with computer-telephony arrangements}
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H04M3/5191 5 {interacting with the Internet}
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H04M3/52 4 Arrangements for routing dead number calls to operators
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H04M3/523 4 with call distribution or queueing
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H04M3/5231 5 {with call back arrangements}
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H04M3/5232 5 {Call distribution algorithms}
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H04M3/5233 6 {Operator skill based call distribution}
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H04M3/5234 6 {Uniform load distribution}
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H04M3/5235 6 {Dependent on call type or called number [DNIS]}
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H04M3/5236 6 {Sequential or circular distribution}
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H04M3/5237 5 {Interconnection arrangements between ACD systems}
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H04M3/5238 5 {with waiting time or load prediction arrangements}
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H04M3/527 3 Centralised call answering arrangements not requiring operator intervention
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H04M3/53 3 Centralised arrangements for recording incoming messages {, i.e. mailbox systems}
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H04M3/5307 4 {for recording messages comprising any combination of audio and non-audio components}
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H04M3/5315 5 {where the non-audio components are still images or video (still image mailbox systems H04N1/324, intermediate storage of video signals for videophones H04N7/147)}
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H04M3/5322 4 {for recording text messages}
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H04M3/533 4 Voice mail systems
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H04M3/53308 5 {Message originator indirectly connected to the message centre, e.g. after detection of busy or absent state of a called party}
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H04M3/53316 5 {Messaging centre selected by message originator}
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H04M3/53325 5 {Interconnection arrangements between voice mail systems}
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H04M3/53333 5 {Message receiving aspects}
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H04M3/53341 6 {Message reply}
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H04M3/5335 6 {Message type or catagory, e.g. priority, indication}
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H04M3/53358 6 {Message preview}
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H04M3/53366 5 {Message disposing or creating aspects}
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H04M3/53375 6 {Message broadcasting}
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H04M3/53383 6 {Message registering commands or announcements; Greetings}
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H04M3/53391 7 {dependent on calling party}
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H04M3/537 4 Arrangements for indicating the presence of a recorded message {, whereby the presence information might include a preview or summary of the message}
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H04M3/54 2 Arrangements for diverting calls for one subscriber to another predetermined subscriber {(based on the calling party profile H04M3/42059; based on location H04M3/42348; based on presence H04M3/42365; to voice mail H04M3/53308)}
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H04M3/541 3 {based on information specified by the calling party}
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H04M3/543 3 {Call deflection}
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H04M3/545 3 {with loop avoiding arrangements}
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H04M3/546 3 {in private branch exchanges}
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H04M3/548 3 {with remote control}
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H04M3/56 2 Arrangements for connecting several subscribers to a common circuit, i.e. affording conference facilities (video conference systems H04N7/15)
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H04M3/561 3 {by multiplexing}
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H04M3/562 3 {where the conference facilities are distributed}
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H04M3/563 3 {User guidance or feature selection}
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H04M3/564 4 {whereby the feature is a sub-conference}
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H04M3/565 4 {relating to time schedule aspects}
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H04M3/566 4 {relating to a participants right to speak (arrangements for multi-party communication with floor control, e.g. for conferences, H04L65/4038, H04L65/4046, H04L65/4053)}
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H04M3/567 3 {Multimedia conference systems}
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H04M3/568 3 {audio processing specific to telephonic conferencing, e.g. spatial distribution, mixing of participants (echo suppression in two-way loud-speaking telephone systems H04M9/02; sound field processing per se H04S7/30)}
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H04M3/569 4 {using the instant speaker's algorithm (speech detection per se G10L25/78)}
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H04M3/58 2 Arrangements for transferring received calls from one subscriber to another; Arrangements affording interim conversations between either the calling or the called party and a third party (substation line holding circuits H04M1/80)
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H04M3/60 1 Semi-automatic systems, i.e. in which the numerical selection of the outgoing line is under the control of an operator
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H04M3/62 2 Keyboard equipment {(in key telephone systems H04M9/003)}
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H04M3/64 2 Arrangements for signalling the number or class of the calling line to the operator (between operators in inter- exchange working H04M5/18)
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H04M5/00 0 Manual exchanges (substation equipment in general H04M1/00)
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H04M5/02 1 Constructional details (jacks, jack-plugs H01R24/58)
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H04M5/04 1 Arrangements for indicating calls or supervising connections for calling or clearing
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H04M5/06 2 affording automatic call distribution
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H04M5/08 1 using connecting means other than cords
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H04M5/10 1 using separate plug for each subscriber
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H04M5/12 1 Calling substations, e.g. by ringing
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H04M5/14 1 Applications of speech amplifiers
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H04M5/16 1 with means for reducing interference; with means for reducing effects due to line faults
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H04M5/18 1 Arrangements for signalling the class or number of called or calling line from one exchange to another
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H04M5/20 2 Arrangements for indicating the numbers of the incoming lines
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H04M7/00 0 Arrangements for interconnection between switching centres
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H04M7/0003 1 {Interconnection between telephone networks and data networks}
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H04M7/0006 2 {where voice calls cross both networks}
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H04M7/0009 2 {where voice calls remain entirely in the telephone network}
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H04M7/0012 1 {Details of application programming interfaces [API] for telephone networks; Arrangements which combine a telephonic communication equipment and a computer, i.e. computer telephony integration [CPI] arrangements}
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H04M7/0015 2 {First party call control architectures}
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H04M7/0018 2 {Computer Telephony Resource Boards}
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H04M7/0021 2 {Details of Application Programming Interfaces}
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H04M7/0024 1 {Services and arrangements where telephone services are combined with data services (arrangements which combine a telephonic equipment and a computer H04M7/0012)}
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H04M7/0027 2 {Collaboration services where a computer is used for data transfer and the telephone is used for telephonic communication}
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H04M7/003 2 {Click to dial services}
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H04M7/0033 2 {Notification or handling of incoming calls by a computer}
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H04M7/0036 2 {where the data service is an information service}
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H04M7/0039 2 {where the data service is provided by a stream of packets which are rendered in real time by the receiving terminal (network streaming of media packets H04L65/60)}
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H04M7/0042 2 {where the data service is a text-based messaging service (H04M7/0054 takes precedence)}
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H04M7/0045 3 {where the text-based messaging service is an instant messaging service}
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H04M7/0048 3 {where the text-based messaging service is a Short Message Service}
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H04M7/0051 2 {where the data service is a multimedia messaging service}
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H04M7/0054 2 {where the data service is an electronic mail service}
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H04M7/0057 2 {Services where the data services network provides a telephone service in addition or as an alternative, e.g. for backup purposes, to the telephone service provided by the telephone services network}
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H04M7/006 1 {Networks other than PSTN/ISDN providing telephone service, e.g. Voice over Internet Protocol (VoIP) , including next generation networks with a packet-switched transport layer (H04L65/00 takes precedence; aspects not specific to the type of network H04M3/00; special services in those networks H04M3/42)}
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H04M7/0063 2 {where the network is a peer-to-peer network}
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H04M7/0066 2 {Details of access arrangements to the networks (where the access arrangement is a PSTN/ISDN access H04M7/122)}
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H04M7/0069 3 {comprising a residential gateway, e.g. those which provide an adapter for POTS or ISDN terminals}
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H04M7/0072 2 {Speech codec negotiation (H04L65/1069 takes precedence)}
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H04M7/0075 2 {Details of addressing, directories or routing tables}
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H04M7/0078 2 {Security; Fraud detection; Fraud prevention}
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H04M7/0081 2 {Network operation, administration, maintenance, or provisioning}
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H04M7/0084 3 {Network monitoring; Error detection; Error recovery; Network testing}
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H04M7/0087 3 {Network planning or provisioning}
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H04M7/009 1 {in systems involving PBX or KTS networks}
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H04M7/0093 1 {signalling arrangements in networks}
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H04M7/0096 1 {Trunk circuits}
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H04M7/06 1 using auxiliary connections for control or supervision {, e.g. where the auxiliary connection is a signalling system number 7 link}
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H04M7/063 2 {where the telephone network is a network other than PSTN/ISDN}
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H04M7/066 2 {where the auxiliary connection is via an Internet Protocol network (interworking of signalling system number 7 (SS7) with Internet Protocol-based session control protocols H04M7/1265, H04M7/127)}
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H04M7/08 1 for phantom working {(phantom working in transmission of digital information H04L5/20)}
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H04M7/12 1 for working between exchanges having different types of switching equipment, e.g. power-driven and step by step or decimal and non-decimal
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H04M7/1205 2 {where the types of switching equipement comprises PSTN/ISDN equipment and switching equipment of networks other than PSTN/ISDN, e.g. Internet Protocol networks}
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H04M7/121 3 {Details of network access arrangements or protocols}
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H04M7/1215 4 {where a cable TV network is used as an access to the PSTN/ISDN}
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H04M7/122 4 {where the PSTN/ISDN access is used as an access to networks other than PSTN/ISDN (access arrangements to networks other than PSTN/ISDN H04M7/0066; access arrangements to public data networks H04L12/2856)}
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H04M7/1225 3 {Details of core network interconnection arrangements}
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H04M7/123 4 {where the packet-switched network is an Internet Protocol Multimedia System-type network}
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H04M7/1235 4 {where one of the core networks is a wireless network}
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H04M7/124 3 {where PSTN/ISDN interconnects two networks other than PSTN/ISDN}
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H04M7/1245 3 {where a network other than PSTN/ISDN interconnects two PSTN/ISDN networks}
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H04M7/125 3 {Details of gateway equipment}
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H04M7/1255 4 {where the switching fabric and the switching logic are decomposed such as in Media Gateway Control}
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H04M7/126 3 {Interworking of session control protocols}
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H04M7/1265 4 {where the session control protocols comprise H.323 and SS7}
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H04M7/127 4 {where the session control protocols comprise SIP and SS7}
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H04M7/1275 3 {Methods and means to improve the telephone service quality, e.g. reservation, prioritisation or admission control}
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H04M7/128 3 {Details of addressing, directories or routing tables}
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H04M7/1285 3 {Details of finding and selecting a gateway for a particular call}
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H04M7/129 3 {Details of providing call progress tones or announcements}
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H04M7/1295 3 {Details of dual tone multiple frequency signalling}
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H04M7/14 1 in systems involving main and subordinate switching centres
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H04M7/16 1 in systems employing carrier frequencies
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H04M9/00 0 Arrangements for interconnection not involving centralised switching
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H04M9/001 1 {Two-way communication systems between a limited number of parties}
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H04M9/002 1 {with subscriber controlled access to a line, i.e. key telephone systems}
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H04M9/003 2 {Transmission of control signals from or to the key telephone set; signalling equipment at key telephone set, e.g. keyboard or display equipment (keyboard equipment in semi-automatic systems H04M3/62)}
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H04M9/005 2 {with subscriber controlled access to an exchange line}
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H04M9/006 3 {Exchange line circuits (subscriber line circuits H04M3/005)}
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H04M9/007 3 {wherein the key telephone sets are star-connected to a central unit by a limited number of lines}
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H04M9/008 2 {Multiplex systems}
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H04M9/02 1 involving a common line for all parties
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H04M9/022 2 {Multiplex systems}
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H04M9/025 3 {Time division multiplex systems, e.g. loop systems}
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H04M9/027 3 {Frequency division multiplex systems}
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H04M9/04 1 involving a separate line for each pair of parties
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H04M9/06 1 involving combinations of interconnecting lines
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H04M9/08 1 Two-way loud-speaking telephone systems with means for conditioning the signal, e.g. for suppressing echoes for one or both directions of traffic
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H04M9/082 2 {using echo cancellers (echo cancellers per se H04B3/23)}
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H04M9/085 2 {using digital techniques (H04M9/082 takes precedence)}
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H04M9/087 2 {using different frequency bands for transmitting and receiving paths (for line transmission in general H04B3/21); using phase shifting arrangements}
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H04M9/10 2 with switching of direction of transmission by voice frequency
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H04M11/00 0 Telephonic communication systems specially adapted for combination with other electrical systems
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H04M11/002 1 {with telemetering systems (telemetering in general G08C)}
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H04M11/005 2 {using recorded signals, e.g. speech}
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H04M11/007 1 {with remote control systems (remote control in general G08C)}
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H04M11/02 1 with bell or annunciator systems
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H04M11/022 2 {Paging systems (personal calling arrangements or devices G08B3/1008; selective calling networks H04W84/022)}
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H04M11/025 2 {Door telephones (adapted for television H04N7/186)}
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H04M11/027 2 {Annunciator systems for hospitals}
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H04M11/04 1 with alarm systems, e.g. fire, police or burglar alarm systems
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H04M11/045 2 {using recorded signals, e.g. speech}
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H04M11/06 1 Simultaneous speech and data transmission, e.g. telegraphic transmission over the same conductors
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H04M11/062 2 {using different frequency bands for speech and other data}
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H04M11/064 2 {Data transmission during pauses in telephone conversation}
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H04M11/066 2 {Telephone sets adapted for data transmision}
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H04M11/068 2 {using time division multiplex techniques; (integrated services digital networks H04Q11/0428)}
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H04M11/08 1 specially adapted for optional reception of entertainment or informative matter
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H04M11/085 2 {using a television receiver, e.g. viewdata system}
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H04M11/10 1 with dictation recording and playback systems
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H04M13/00 0 Party-line systems (substation equipment H04M1/00; exchange equipment H04M3/00, H04M5/00; metering arrangements H04M15/36)
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H04M15/00 0 Arrangements for metering, time-control or time indication {; Metering, charging or billing arrangements for voice wireline or wireless communications, e.g. VoIP}
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H04M15/04 1 Recording calls {, or communications} in printed, perforated or other permanent form
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H04M15/06 2 Recording class or number of calling {, i.e. A-party} or called party {, i.e. B-party}
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H04M15/07 1 {Split billing, i.e. both A-party and B-party charged for the communication}
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H04M15/08 1 Metering calls to called party {, i.e. B-party charged for the communication}
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H04M15/09 1 {Third party charged communications}
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H04M15/10 1 Metering calls from calling party {, i.e. A-party charged for the communication}
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H04M15/12 2 Discriminative metering {, charging or billing}
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H04M15/14 3 according to class of calling party
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H04M15/16 3 according to connection obtained
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H04M15/18 3 according to duration of the call {, or the communication}
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H04M15/20 4 Operator's time recording or indicating arrangements
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H04M15/22 3 according to time of day
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H04M15/24 3 preventing metering of tax-free calls to certain lines, e.g. to fire or ambulance stations
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H04M15/26 2 with a meter {or performing charging or billing} at the exchange controlled by an operator
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H04M15/28 1 with meter at substation {or with calculation of charges at terminal}
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H04M15/30 2 the meter {or calculation of charges} not being controlled from an exchange
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H04M15/31 1 {Distributed metering or calculation of charges}
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H04M15/32 1 {Charging, billing or} metering arrangements for satellites or concentrators which connect one or more exchange lines with a group of local lines
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H04M15/34 1 {Charging, billing or} metering arrangements for private branch exchanges
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H04M15/36 1 {Charging, billing or} metering arrangements for party-lines
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H04M15/38 1 {Charging, billing or} metering by apparatus other than mechanical step-by-step counter type
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H04M15/39 1 {Arrangements for preventing metering, charging or billing}
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H04M15/41 1 {Billing record details, i.e. parameters, identifiers, structure of call data record [CDR]}
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H04M15/42 1 {Dynamic individual rates per user}
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H04M15/43 1 {Billing software details}
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H04M15/44 1 {Augmented, consolidated or itemized billing statement or bill presentation}
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H04M15/46 1 {Real-time negotiation between users and providers or operators}
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H04M15/47 1 {Fraud detection or prevention means}
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H04M15/48 1 {Secure or trusted billing, e.g. trusted elements or encryption}
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H04M15/49 1 {Connection to several service providers}
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H04M15/50 1 {for cross-charging network operators}
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H04M15/51 1 {for resellers, retailers or service providers}
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H04M15/52 1 {for operator independent billing system}
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H04M15/53 1 {using mediation}
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H04M15/54 1 {for revenue sharing}
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H04M15/55 1 {for hybrid networks}
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H04M15/56 1 {for VoIP communications}
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H04M15/57 1 {for integrated multimedia messaging subsystem [IMS]}
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H04M15/58 1 {based on statistics of usage or network monitoring}
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H04M15/59 1 {based on real time}
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H04M15/60 1 {based on actual use of network resources}
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H04M15/61 1 {based on the service used}
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H04M15/62 1 {based on trigger specification}
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H04M15/63 1 {based on the content carried by the session initiation protocol [SIP] messages}
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H04M15/64 1 {On-line charging system [OCS]}
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H04M15/65 1 {Off-line charging system}
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H04M15/66 1 {Policy and charging system}
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H04M15/67 1 {Transmitting arrangements for sending billing related information}
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H04M15/68 1 {Payment of value-added services}
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H04M15/70 1 {Administration or customization aspects; Counter-checking correct charges}
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H04M15/705 2 {Account settings, e.g. limits or numbers or payment}
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H04M15/71 2 {Modifying recharging resources}
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H04M15/715 2 {Activating new subscriber or card}
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H04M15/72 2 {by the user}
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H04M15/721 3 {using the Internet}
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H04M15/723 3 {using the user's device}
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H04M15/725 2 {by the operator}
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H04M15/73 2 {Validating charges}
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H04M15/735 2 {Re-crediting user}
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H04M15/74 2 {Backing up}
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H04M15/745 2 {Customizing according to wishes of subscriber, e.g. friends or family}
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H04M15/75 2 {Account location specifications}
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H04M15/751 3 {Card based account, e.g. smart card, SIM card or USIM}
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H04M15/752 3 {Terminal based account}
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H04M15/753 3 {Network based account}
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H04M15/755 2 {Account identification}
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H04M15/7553 3 {via service number, e.g. calling card}
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H04M15/7556 3 {by SIM, e.g. smart card account in SCP, SDP or SN}
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H04M15/76 2 {Synchronization of distributed accounts}
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H04M15/765 2 {Linked or grouped accounts, e.g. of users or devices}
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H04M15/7652 3 {shared by users}
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H04M15/7655 3 {shared by technologies}
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H04M15/7657 3 {for closed subscriber group [CSG]}
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H04M15/77 2 {involving multiple accounts per user}
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H04M15/771 3 {per terminal or location, e.g. mobile device with multiple directory numbers}
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H04M15/772 3 {per service, e.g. prepay or post-pay}
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H04M15/773 3 {per technology, e.g. PSTN or wireless}
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H04M15/774 3 {per card}
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H04M15/775 2 {Account specifications on parallel communications}
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H04M15/78 2 {Redistributing amount between accounts}
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H04M15/781 3 {dynamically}
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H04M15/783 3 {by user request}
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H04M15/785 2 {Reserving amount on the account}
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H04M15/79 2 {Virtual purses}
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H04M15/80 1 {Rating or billing plans; Tariff determination aspects}
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H04M15/8005 2 {Flat-fee}
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H04M15/8011 2 {using class of subscriber}
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H04M15/8016 2 {based on quality of service [QoS]}
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H04M15/8022 2 {Determining tariff or charge band}
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H04M15/8027 2 {based on network load situation}
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H04M15/8033 2 {location-dependent, e.g. business or home}
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H04M15/8038 2 {Roaming or handoff}
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H04M15/8044 2 {Least cost routing}
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H04M15/805 3 {Bidding}
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H04M15/8055 3 {Selecting cheaper transport technology for a given service}
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H04M15/8061 3 {Selecting least cost route depending on origin or type of service}
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H04M15/8066 2 {According to the number of recipients}
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H04M15/8072 3 {Group, conference or multi-party call}
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H04M15/8077 3 {Group MMS or SMS; Point-to-multi-point services or broadcast services}
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H04M15/8083 2 {involving reduced rates or discounts, e.g. time-of-day reductions or volume discounts}
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H04M15/8088 2 {involving increased rates, e.g. spam messaging billing differentiation}
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H04M15/8094 2 {Trial service, i.e. free of charge service for trial purposes}
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H04M15/81 1 {Dynamic pricing, e.g. change of tariff during call}
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H04M15/82 1 {Criteria or parameters used for performing billing operations}
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H04M15/8207 2 {Time based data metric aspects, e.g. VoIP or circuit switched packet data}
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H04M15/8214 2 {Data or packet based}
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H04M15/8221 2 {Message based}
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H04M15/8228 2 {Session based}
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H04M15/8235 2 {Access based}
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H04M15/8242 2 {Transaction based}
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H04M15/825 2 {based on the number of used channels, e.g. bundling channels, frequencies or CDMA codes}
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H04M15/8257 2 {Unit based}
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H04M15/8264 2 {Pulse based}
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H04M15/8271 2 {Based on the number of used services, e.g. call forwarding or call barring}
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H04M15/8278 2 {Event based}
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H04M15/8285 2 {Money or currency based}
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H04M15/8292 2 {Charging for signaling or unsuccessful connection}
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H04M15/83 1 {Notification aspects}
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H04M15/835 2 {Time or frequency of notifications, e.g. Advice of Charge [AoC]}
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H04M15/8351 3 {before establishing a communication}
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H04M15/8353 3 {during the communication}
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H04M15/8355 3 {after the end of the communication}
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H04M15/8356 3 {in regular intervals}
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H04M15/8358 3 {Dynamic change of the length or frequency of the notification interval}
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H04M15/84 2 {Types of notifications}
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H04M15/842 3 {Announcement, e.g. IVR dialogue}
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H04M15/844 3 {Message, e.g. SMS}
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H04M15/846 3 {optical, e.g. icon}
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H04M15/848 3 {Tone, e.g. beeper}
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H04M15/85 2 {characterised by the type of condition triggering a notification}
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H04M15/851 3 {Determined tariff}
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H04M15/852 3 {Low balance or limit reached}
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H04M15/853 3 {Calculate maximum communication time or volume}
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H04M15/854 3 {Available credit}
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H04M15/855 3 {Successful event}
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H04M15/856 3 {Unsuccessful event}
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H04M15/857 3 {Cumulative charges}
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H04M15/858 3 {Request users acknowledgement prior to use}
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H04M15/86 2 {Recipients of the notification}
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H04M15/863 3 {multiple parties, e.g. multi party AOC}
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H04M15/866 3 {a predetermined or undetermined destination, e.g. notifying a prepaid accounting server of a successful delivery of a service}
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H04M15/88 1 {Provision for limiting connection, or expenditure}
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H04M15/881 2 {for continuing the call beyond the limit using allow grace}
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H04M15/882 2 {for continuing the call beyond the limit using an alternative, e.g. alternative account}
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H04M15/883 2 {linked escalation limits, i.e. establish, first or second limit}
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H04M15/885 2 {limit per application}
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H04M15/886 2 {limit per terminal}
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H04M15/887 2 {limit per user or user related number}
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H04M15/888 2 {severing connection after predetermined time or data}
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H04M15/90 1 {using Intelligent Networks [IN] or Advanced Intelligent Networks [AIN]}
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H04M15/93 1 {using near field or similar technologies}
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H04M17/00 0 Prepayment {of wireline communication systems, wireless communication systems or} telephone systems (using a coded card to authorise calls from a telephone set H04M1/675)
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H04M17/005 1 {Disposable prepaid communication devices}
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H04M17/01 1 {Cocot systems, i.e. private ownership of payphones}
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H04M17/02 1 Coin-freed or check-freed systems {, e.g. mobile- or card-operated phones, public telephones or booths}
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H04M17/023 2 {Circuit arrangements}
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H04M17/026 2 {Constructional features}
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H04M17/10 1 {Account details or usage}
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H04M17/103 2 {using SIMs (USIMs) or calling cards}
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H04M17/106 2 {using commercial credit or debit cards}
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H04M2017/12 1 {using calling, telephone credit/debit cards}
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H04M2017/14 1 {using commercial credit/debit cards, e.g. VISA, AMEX}
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H04M17/20 1 {with provision for recharging the prepaid account or card, or for credit establishment}
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H04M17/201 2 {automatic recharging with predetermined amount at threshold}
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H04M17/202 2 {selecting interactively a payment method}
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H04M17/203 3 {cash-based recharging, i.e. physical input of coins or bank notes}
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H04M17/204 2 {on-line recharging, e.g. cashless}
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H04M17/205 3 {by calling a service number, e.g. interactive voice response [IVR] or menu}
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H04M17/206 3 {by sending a message, e.g. SMS, MMS or EMS}
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H04M17/207 3 {using signaling, e.g. USSD, UUS or DTMF}
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H04M17/208 3 {using WAP or Internet, i.e. including electronic payment, e.g. e-cash}
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H04M2017/22 1 {with automatic recharging of account/card, e.g. if limit is reached during connection the account is recharged automatically}
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H04M2017/222 2 {at threshold}
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H04M2017/225 2 {with predetermined amount}
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H04M2017/227 2 {with amount selected interactively}
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H04M2017/24 1 {with on-line recharging of an account or card, e.g. cashless}
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H04M2017/241 2 {by calling a service number IVR, menu}
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H04M2017/243 2 {by sending a message, e.g. SMS, MMS, EMS}
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H04M2017/245 2 {using money, i.e. physical input of coins or bank notes}
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H04M2017/246 2 {using signalling, e.g. USSD, UUS, DTMF}
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H04M2017/248 2 {using WAP or Internet, i.e. including electronic payment, e-cash, etc.}
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H04M2017/25 1 {using a code}
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H04M2017/2506 2 {code input or reading}
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H04M2017/2512 3 {from communication terminal display}
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H04M2017/2518 3 {from material card, using a magnetic stripe card}
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H04M2017/2525 3 {optical code recognition [OCR], e.g. bar code reader}
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H04M2017/2531 3 {wireless, e.g. Bluetooth, RFID}
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H04M2017/2537 2 {code reader}
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H04M2017/2543 3 {public, e.g. public recharge point}
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H04M2017/255 3 {local at the terminal itself}
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H04M2017/2556 2 {code type}
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H04M2017/2562 3 {alphanumeric}
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H04M2017/2568 3 {bar code}
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H04M2017/2575 3 {pattern, i.e. single or changing sequences of pictures or patterns}
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H04M2017/2581 3 {punched holes}
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H04M2017/2587 3 {temporarily valid code}
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H04M2017/2593 2 {code management}
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H04M2017/26 1 {with real-time recharging of account/card, e.g. if limit is reached during connection user is asked if he wants to recharge or not}
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H04M17/30 1 {using a code}
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H04M17/301 2 {Code input or reading}
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H04M17/302 3 {from communication terminal display}
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H04M17/303 3 {from material cards, i.e. magnetic stripe card}
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H04M17/304 3 {Optical code recognition [OCR], e.g. bar code reader}
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H04M17/305 3 {Wireless codes, e.g. Bluetooth or RFID}
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H04M17/306 3 {using public code readers, e.g. public payment or recharge point}
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H04M17/307 2 {Code type, e.g. alphanumeric code, bar code}
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H04M17/308 2 {Code management}
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H04M17/35 1 {Pay as you go}
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H04M19/00 0 Current supply arrangements for telephone systems (for selecting-equipment H04Q1/28)
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H04M19/001 1 {Current supply source at the exchanger providing current to substations}
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H04M19/003 2 {Arrangements for compensation of the DC flux in line transformers}
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H04M19/005 2 {Feeding arrangements without the use of line transformers}
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H04M19/006 2 {Circuits for increasing the range of current supply source}
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H04M19/008 2 {Using DC/DC converters (DC/DC converters per se H02M3/28)}
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H04M19/02 1 providing ringing current or supervisory tones, e.g. dialling tone or busy tone
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H04M19/023 2 {by reversing the polarity of the current at the exchange}
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H04M19/026 2 {Arrangements for interrupting the ringing current}
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H04M19/04 2 the ringing-current being generated at the substations
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H04M19/041 3 {Encoding the ringing signal, i.e. providing distinctive or selective ringing capability}
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H04M19/042 3 {with variable loudness of the ringing tone, e.g. variable envelope or amplitude of ring signal}
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H04M19/044 4 {according to the level of ambient noise}
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H04M19/045 3 {Call privacy arrangements, e.g. timely inhibiting the ring signal}
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H04M19/047 3 {Vibrating means for incoming calls}
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H04M19/048 3 {Arrangements providing optical indication of the incoming call, e.g. flasher circuits}
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H04M19/06 1 in which current supply sources at subordinate switching centres are charged from the main exchange
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H04M19/08 1 with current supply sources at the substations (generating ringing current H04M19/04)
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H04M99/00 0 Subject matter not provided for in other groups of this subclass
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H04M2201/00 0 Electronic components, circuits, software, systems or apparatus used in telephone systems
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H04M2201/02 1 Diodes
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H04M2201/04 1 Transistors
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H04M2201/06 1 Integrated circuits
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H04M2201/08 1 Magnetic elements
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H04M2201/10 1 Logic circuits
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H04M2201/12 1 Counting circuits
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H04M2201/14 1 Delay circuits; Timers
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H04M2201/16 1 Sequence circuits
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H04M2201/18 1 Comparators
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H04M2201/20 1 Scanners
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H04M2201/22 1 Synchronisation circuits
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H04M2201/26 1 A/D convertors
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H04M2201/28 1 S/P convertors
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H04M2201/30 1 PCM
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H04M2201/32 1 Personal computers
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H04M2201/34 1 Microprocessors
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H04M2201/36 1 Memories
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H04M2201/38 1 Displays
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H04M2201/39 1 using speech synthesis (speech synthesis per se G10L13/00)
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H04M2201/40 1 using speech recognition (speech recognition per se G10L15/00)
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H04M2201/405 2 involving speaker-dependent recognition (adaptation to speaker for speech recognition G10L15/07)
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H04M2201/41 1 using speaker recognition (speaker recognition per se G10L17/00)
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H04M2201/42 1 Graphical user interfaces
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H04M2201/50 1 Telephonic communication in combination with video communication
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H04M2201/52 1 Telephonic communication in combination with fax communication
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H04M2201/54 1 Object oriented software
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H04M2201/60 1 Medium conversion
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H04M2201/80 1 line protection circuits such as current or overvoltage protection circuits
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H04M2203/00 0 Aspects of automatic or semi-automatic exchanges
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H04M2203/05 1 related to OAM&P
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H04M2203/051 2 technician dispatch system
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H04M2203/052 2 software update
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H04M2203/053 2 remote terminal provisioning, e.g. of applets
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H04M2203/055 2 loopback testing
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H04M2203/056 2 non-invasive testing, i.e. in operation testing without service interruption
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H04M2203/057 2 distortion monitoring (QoS monitoring H04M3/2227; quality of speech transmission monitoring H04M3/2236)
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H04M2203/058 2 signature devices
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H04M2203/10 1 related to the purpose or context of the telephonic communication
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H04M2203/1008 2 Calls without connection establishment for implicit information transfer or as a service trigger
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H04M2203/1016 2 Telecontrol
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H04M2203/1025 3 of avatars
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H04M2203/1033 2 Remote administration, e.g. of web servers
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H04M2203/1041 2 Televoting
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H04M2203/105 2 Financial transactions and auctions, e.g. bidding (auctioneering devices in packet switching networks H04L12/1804)
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H04M2203/1058 2 Shopping and product ordering
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H04M2203/1066 2 Game playing
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H04M2203/1075 2 Telemetering, e.g. transmission of ambient measurements
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H04M2203/1083 2 for hotels
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H04M2203/1091 2 Fixed mobile conversion
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H04M2203/15 1 related to dial plan and call routing
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H04M2203/152 2 Temporary dial plan
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H04M2203/154 2 Functional or symbolic dial plan such as license plate numbers
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H04M2203/156 2 On-line status dependent routing
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H04M2203/158 2 Call-type dependent routing (route determination based on the nature of the carried application in packet switching networks H04L45/306)
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H04M2203/20 1 related to features of supplementary services
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H04M2203/2005 2 Temporarily overriding a service configuration
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H04M2203/2011 2 Service processing based on information specified by a party before or during a call, e.g. information, tone or routing selection
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H04M2203/2016 2 Call initiation by network rather than by subscriber
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H04M2203/2022 2 Path replacement
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H04M2203/2027 2 Live party detection
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H04M2203/2033 2 Call handling or answering restrictions, e.g. specified by the calling party
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H04M2203/2038 2 Call context notifications
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H04M2203/2044 2 Group features, e.g. closed user group
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H04M2203/205 2 Broadcasting (broadcasting in packet switching networks H04L12/18)
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H04M2203/2055 2 Line restrictions
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H04M2203/2061 2 Language aspects
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H04M2203/2066 2 Call type detection of indication, e.g. voice or fax, mobile of fixed, PSTN or IP
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H04M2203/2072 2 Schedules, e.g. personal calendars
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H04M2203/2077 2 Call queuing apart from automatic call distribution
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H04M2203/2083 2 Confirmation by serviced party
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H04M2203/2088 2 Call or conference reconnect, e.g. resulting from isdn terminal portability
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H04M2203/2094 2 Proximity
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H04M2203/25 1 related to user interface aspects of the telephonic communication service
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H04M2203/251 2 where a voice mode or a visual mode can be used interchangeably
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H04M2203/252 3 where a voice mode is enhanced with visual information
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H04M2203/253 3 where a visual mode is used instead of a voice mode
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H04M2203/254 4 where the visual mode comprises menus
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H04M2203/255 2 comprising a personalized user interface
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H04M2203/256 2 comprising a service specific user interface
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H04M2203/257 2 remote control of substation user interface for telephonic services, e.g. by ISDN stimulus, ADSI, wireless telephony application WTA, MExE or BREW
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H04M2203/258 2 Service state indications
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H04M2203/30 1 related to audio recordings in general
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H04M2203/301 2 Management of recordings
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H04M2203/303 2 Marking
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H04M2203/305 2 Recording playback features, e.g. increased speed
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H04M2203/306 2 Prerecordings to be used during a voice call
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H04M2203/308 2 Personal name recording
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H04M2203/35 1 related to information services provided via a voice call
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H04M2203/351 2 Pre or post-call/conference information service
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H04M2203/352 2 In-call/conference information service
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H04M2203/353 2 where the information comprises non-audio but is provided over voice channels (protocols for multimedia information services per se H04L65/00)
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H04M2203/354 2 Reverse directory service
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H04M2203/355 2 Interactive dialogue design tools, features or methods
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H04M2203/356 2 Phonecasting
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H04M2203/357 2 Autocues for dialog assistance
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H04M2203/358 2 Digital rights management
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H04M2203/359 2 Augmented reality
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H04M2203/40 1 related to call centers
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H04M2203/401 2 Performance feedback
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H04M2203/402 2 Agent or workforce management
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H04M2203/403 2 Agent or workforce training
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H04M2203/404 2 Collaboration among agents
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H04M2203/405 2 Competitive bidding for work items
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H04M2203/406 2 Rerouting calls between call centers
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H04M2203/407 2 Call center operated for multiple customers
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H04M2203/408 2 Customer-specific call routing plans
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H04M2203/45 1 related to voicemail messaging
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H04M2203/4509 2 Unified messaging with single point of access to voicemail and other mail or messaging systems (unified messaging in packet switching networks H04L51/56)
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H04M2203/4518 2 Attachments to voicemail (messages including annexed information, e.g. Attachments, in packet switching networks H04L51/08)
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H04M2203/4527 2 Voicemail attached to other kind of message
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H04M2203/4536 2 Voicemail combined with text-based messaging
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H04M2203/4545 2 Message forwarding (selective message forwarding in packet switching networks H04L51/214)
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H04M2203/4554 2 Sender-side editing
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H04M2203/4563 2 Voicemail monitoring during recording
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H04M2203/4572 2 Voicemail RSS
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H04M2203/4581 2 Sending message identifiers instead of whole messages (notification of incoming messages in packet-switching networks H04L51/224)
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H04M2203/459 2 Calling party redirected to message centre on called party request
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H04M2203/50 1 related to audio conference
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H04M2203/5009 2 Adding a party to an existing conference (conducting a computer conference, e.g. admission detection H04L12/1822)
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H04M2203/5018 2 Initiating a conference during a two-party conversation, i.e. three-party-service or three-way-call (computer conference organisation arrangements H04L12/1818)
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H04M2203/5027 2 Dropping a party from a conference (conducting a computer conference, e.g. admission detection H04L12/1822)
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H04M2203/5036 2 using conference for collection of feedback
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H04M2203/5045 2 Selection of bridge/multipoint control unit (network arrangements for computer conference optimisation H04L12/1827)
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H04M2203/5054 2 Meet-me conference, i.e. participants dial-in
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H04M2203/5063 2 Centrally initiated conference, i.e. Conference server dials participants (computer conference organisation arrangements H04L12/1818)
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H04M2203/5072 2 Multiple active speakers (conducting a computer conference, e.g. Admission detection H04L12/1822)
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H04M2203/5081 2 Inform conference party of participants, e.g. of change of participants (conducting a computer conference, e.g. admission detection, H04L12/1822)
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H04M2203/509 2 Microphone arrays
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H04M2203/55 1 related to network data storage and management
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H04M2203/551 2 Call history (recording a computer conference H04L12/1831)
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H04M2203/552 2 Call annotations
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H04M2203/553 2 Data upload
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H04M2203/554 2 Data synchronization
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H04M2203/555 2 Statistics, e.g. about subscribers but not being call statistics
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H04M2203/556 3 Statistical analysis and interpretation
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H04M2203/557 2 Portable profiles
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H04M2203/558 2 Databases
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H04M2203/559 2 Sorting systems
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H04M2203/60 1 related to security aspects in telephonic communication systems (network architectures or network communication protocols for network security H04L63/00)
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H04M2203/6009 2 Personal information, e.g. profiles or personal directories being only provided to authorised persons
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H04M2203/6018 2 Subscriber or terminal logon/logoff
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H04M2203/6027 2 Fraud preventions
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H04M2203/6036 2 Anti virus measures
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H04M2203/6045 2 Identity confirmation
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H04M2203/6054 2 Biometric subscriber identification
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H04M2203/6063 2 Authentication using cards
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H04M2203/6072 2 Authentication using challenger response
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H04M2203/6081 2 Service authorization mechanisms
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H04M2203/609 2 Secret communication
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H04M2203/65 1 related to applications where calls are combined with other types of communication
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H04M2203/651 2 Text message transmission triggered by call (automatic reactions in messaging within packet-switching networks H04L51/02)
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H04M2203/652 2 Call initiation triggered by text message
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H04M2203/654 2 Pre, in or post-call message
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H04M2203/655 2 Combination of telephone service and social networking (messaging within social networks H04L51/52)
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H04M2203/657 2 Combination of voice and fax calls
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H04M2203/658 2 Combination of voice calls and paging
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H04M2207/00 0 Type of exchange or network, i.e. telephonic medium, in which the telephonic communication takes place
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H04M2207/08 1 ISDN systems
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H04M2207/12 1 intelligent networks
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H04M2207/14 1 cable networks
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H04M2207/18 1 wireless networks
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H04M2207/182 2 wireless circuit-switched
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H04M2207/185 2 wireless packet-switched
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H04M2207/187 2 combining circuit and packet-switched, e.g. GPRS
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H04M2207/20 1 hybrid systems
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H04M2207/203 2 composed of PSTN and data network, e.g. the Internet
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H04M2207/206 2 composed of PSTN and wireless network
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H04M2207/30 1 third party service providers
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H04M2207/35 1 virtual private networks
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H04M2207/40 1 terminals with audio html browser
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H04M2207/45 1 public-private interworking, e.g. centrex
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H04M2215/00 0 Metering arrangements; Time controlling arrangements; Time indicating arrangements
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H04M2215/01 1 Details of billing arrangements
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H04M2215/0104 2 Augmented, consolidated or itemised billing statement, e.g. additional billing information, bill presentation, layout, format, e-mail, fax, printout, itemised bill per service or per account, cumulative billing, consolidated billing
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H04M2215/0108 2 Customization according to wishes of subscriber, e.g. customer preferences, friends and family, selecting services or billing options, Personal Communication Systems [PCS]
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H04M2215/0112 2 Dynamic pricing, e.g. change of tariff during call
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H04M2215/0116 2 Provision for limiting expenditure, e.g. limit on call expenses or account
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H04M2215/012 3 Continue allow grace, e.g. accept negative balance
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H04M2215/0124 3 Continue alternative, i.e. alternative account to continue use
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H04M2215/0128 3 Linked escalation limits, establish, first or second limit
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H04M2215/0132 3 Limit per application
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H04M2215/0136 3 Limit per terminal
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H04M2215/014 3 Limit per user or user related number
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H04M2215/0144 3 Release upon reaching limit
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H04M2215/0148 2 Fraud detection or prevention means
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H04M2215/0152 2 General billing plans, rate plans, e.g. charge rates, numbering plans, rate centers, customer accounts
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H04M2215/0156 2 Secure and trusted billing, e.g. trusted elements, encryption, digital signature, codes or double check mechanisms to secure billing calculation and information
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H04M2215/016 2 Billing using Intelligent Networks [IN] or Advanced Intelligent Networks [AIN]
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H04M2215/0164 2 Billing record, e.g. Call Data Record [CDR], Toll Ticket[TT], Automatic Message Accounting [AMA], Call Line Identifier [CLI], details, i.e. parameters, identifiers, structure
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H04M2215/0168 2 On line or real-time flexible customization or negotiation according to wishes of subscriber
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H04M2215/0172 2 Mediation, i.e. device or program to reformat CDRS from one or more switches in order to adapt to one or more billing programs formats
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H04M2215/0176 2 Billing arrangements using internet
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H04M2215/018 2 On-line real-time billing, able to see billing information while in communication, e.g. via the internet
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H04M2215/0184 2 involving reduced rates or discounts, e.g. time-of-day reductions, volume discounts, cell discounts, group billing, frequent calling destination(s) or user history list
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H04M2215/0188 2 Network monitoring; statistics on usage on called/calling number
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H04M2215/0192 2 Sponsored, subsidised calls via advertising, e.g. calling cards with ads or connecting to special ads, free calling time by purchasing goods
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H04M2215/0196 2 Payment of value-added services, mainly when their charges are added on the telephone bill, e.g. payment of non-telecom services, e-commerce, on-line banking
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H04M2215/14 1 Billing aspects relating to the actual charge
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H04M2215/143 2 Non communication time, i.e. billing the user for the actual time used by the service, not for the time awaiting responses due to network problems; Billing the user when there is a satisfied QoS
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H04M2215/146 2 Data billing, e.g. wherein the user is charged based only on the time he receives data
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H04M2215/20 1 Technology dependant metering
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H04M2215/2006 2 Fixed telephone network, e.g. POTS, ISDN
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H04M2215/2013 2 Fixed data network, e.g. PDN, ATM, B-ISDN
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H04M2215/202 2 VoIP; Packet switched telephony
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H04M2215/2026 2 Wireless network, e.g. GSM, PCS, TACS
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H04M2215/2033 2 WLAN
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H04M2215/204 2 UMTS; GPRS
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H04M2215/2046 2 Hybrid network
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H04M2215/2053 2 In based PPS
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H04M2215/206 2 CDMA, i.e. Code Division Multiple Access
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H04M2215/2066 2 Service node based PPS
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H04M2215/2073 2 Multipoint, e.g. messaging, broadcast or group SMS
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H04M2215/208 2 IMS, i.e. Integrated Multimedia messaging Subsystem
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H04M2215/2086 2 xDSL Modem lines, e.g. HDSL or ADSL
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H04M2215/2093 2 Push to talk
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H04M2215/22 1 Bandwidth or usage-sensitve billing
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H04M2215/24 1 Voice over IP billing
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H04M2215/26 1 Data billing charged as a voice call, i.e. based on time or unit charging
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H04M2215/28 1 SMS billing
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H04M2215/32 1 Involving wireless systems
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H04M2215/34 1 Roaming
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H04M2215/42 1 Least cost routing, i.e. provision for selecting the lowest cost tariff
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H04M2215/44 1 Charging/billing arrangements for connection made over different networks, e.g. wireless and PSTN, ISDN, etc.
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H04M2215/46 1 Connection to several service providers
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H04M2215/48 1 Sending information over a non-traffic network channel or another connection than the one actually used, e.g. signalling, D-channel, data and voice
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H04M2215/52 1 Interconnection, inter-exchange, reseller billing, billing agreements between different operators, e.g. billing identifier added on the CDR in order to cross charge the other operator, inter-operator accounting, reconciliation, bill directly resellers customers
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H04M2215/54 1 Resellers-retail or service providers billing, e.g. agreements with telephone service operator, activation, charging/recharging of accounts
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H04M2215/56 1 On line or real-time flexible agreements between service providers and telecoms operators
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H04M2215/62 1 Called party billing, e.g. reverse billing, freephone, collect call, 0800 or 0900
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H04M2215/64 1 Split billing, sharing the cost of calls, e.g. between calling and called parties
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H04M2215/66 1 Third party billing, i.e. third party can also be the predetermined telephone line of the caller if he is calling from another telephone set
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H04M2215/68 1 Billing calls completely to the calling party, except POTS, e.g. charge on caller's choice service
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H04M2215/70 1 Administration aspects, modify settings or limits or counter-check correct charges
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H04M2215/7009 2 Account settings, e.g. users, terminals, limits, numbers or payment
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H04M2215/7018 2 Modify recharging resources, e.g. banking, credit, debit or phone account
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H04M2215/7027 2 Activate new subscriber or card
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H04M2215/7036 2 Administer via user
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H04M2215/7045 3 Using Internet or WAP
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H04M2215/7054 3 Using the phone
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H04M2215/7063 2 Administer via operator
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H04M2215/7072 2 Validate charges
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H04M2215/7081 3 Re-credit user, e.g. repay user with the amount or free time after finding an error in calculating the charges
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H04M2215/709 2 Backup
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H04M2215/72 1 Account specifications
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H04M2215/7204 2 Account location
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H04M2215/7209 3 Card based, e.g. smart card, SIM card or USIM
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H04M2215/7213 3 Terminal based
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H04M2215/7218 3 Network based
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H04M2215/7222 2 Account identification
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H04M2215/7227 3 via service number, e.g. calling card
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H04M2215/7231 3 by SIM, e.g. smart card account in SCP, SDP or SN
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H04M2215/7236 2 Synchronisation of distributed accounts
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H04M2215/724 2 Linked accounts
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H04M2215/7245 3 Shared by users, e.g. group accounts or one account for different users
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H04M2215/725 3 Shared by technologies, e.g. one account for different access technologies
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H04M2215/7254 3 Multiple accounts per user
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H04M2215/7259 4 per terminal or location; Mobile with multiple directory numbers
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H04M2215/7263 4 per service, e.g. prepay and post-pay
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H04M2215/7268 4 per technology, e.g. PSTN or wireless
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H04M2215/7272 4 per card
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H04M2215/7277 2 Account specifications on parallel communications
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H04M2215/7281 3 Redistribute amount between accounts
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H04M2215/7286 4 Dynamically
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H04M2215/729 4 by user request
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H04M2215/7295 3 Reserve amount, e.g. according to estimated costs for a typical communication duration or according to the estimated volume to be transferred
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H04M2215/74 1 Rating aspects, e.g. rating parameters or tariff determination apects
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H04M2215/7407 2 class of subscriber
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H04M2215/7414 2 QoS
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H04M2215/7421 2 Determine tariff or charge band
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H04M2215/7428 2 Load situation, e.g. Current network load, traffic load or available resources
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H04M2215/7435 2 Location dependent, e.g. Bussiness or home
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H04M2215/7442 2 Roaming
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H04M2215/745 2 Least cost routing, e.g. Automatic or manual, call by call or by preselection
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H04M2215/7457 3 Biding
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H04M2215/7464 3 Select transport technology for a given service, e.g. use for data connection WLAN rather than GSM/UMTS/GPRS or use company's communication network rather than a public network
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H04M2215/7471 3 Select route depending on origin or type of service, e.g. route TDMA voice calls differently than VoIP calls
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H04M2215/7478 2 According to the number of recipients
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H04M2215/7485 3 Group call; Conference call; Multi Party Call
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H04M2215/7492 3 Group MMS or SMS; Point-to-multi-point services, broadcast services
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H04M2215/78 1 Metric aspects
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H04M2215/7806 2 Time based
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H04M2215/7813 2 Time based data, e.g. VoIP or circuit switched packet data
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H04M2215/782 2 Data or packet based
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H04M2215/7826 2 Message based
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H04M2215/7833 2 Session based
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H04M2215/784 2 Access based
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H04M2215/7846 2 Transaction based
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H04M2215/7853 2 Based on the number of used channels, e.g. bundling channels or frequencies or CDMA codes
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H04M2215/786 2 Unit based
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H04M2215/7866 2 Pulse based
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H04M2215/7873 2 Based on the number of used services, e.g. call forwarding or call barring
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H04M2215/788 2 Event based
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H04M2215/7886 2 Apply cheapest or best package, e.g. selection among available tariffs or packages (least cost routing H04M2215/42)
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H04M2215/7893 2 Money or currency based
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H04M2215/81 1 Notifying aspects, e.g. notifications or displays to the user
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H04M2215/8104 2 Time or frequency of notification
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H04M2215/8108 3 before establishing a communication
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H04M2215/8112 3 during the communication
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H04M2215/8116 3 after the end of the communication
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H04M2215/812 3 in regular intervals
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H04M2215/8125 3 Dynamic change of the length/frequency of the length of the notification interval, e.g. depending on the remaining available prepaid credit
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H04M2215/8129 2 Type of notification
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H04M2215/8133 3 Announcement, e.g. IVR dialogue, intelligent peripheral or switch
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H04M2215/8137 3 Message, e.g. alphanumeric text, SMS, MMS, EMS or www-based messaging service
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H04M2215/8141 3 Optical, e.g. flashing indication of a lamp, icon, soft-key or symbol
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H04M2215/8145 3 Tone, e.g. beeper, sound, wave
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H04M2215/815 2 Notification when a specific condition, service or event is met
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H04M2215/8154 3 Determined tariff
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H04M2215/8158 3 Low balance or limit reached
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H04M2215/8162 3 Calculate maximum communication time or volume
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H04M2215/8166 3 Available credit
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H04M2215/817 3 Successful event, e.g. successful recharge or delivery of a service
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H04M2215/8175 3 Unsuccessful event, e.g. service rejected due to low credit
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H04M2215/8179 3 Cumulative charges
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H04M2215/8183 3 Request users acknowledgement prior to use
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H04M2215/8187 2 Send to
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H04M2215/8191 3 multiple parties, e.g. multi party AOC
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H04M2215/8195 3 a predetermined or undetermined destination, e.g. notifying a prepaid accounting server of a successful delivery of a service, a connection, or chargeable content to a mobile terminal
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H04M2215/82 1 Advice-of-Charge [AOC], i.e. notify subscriber of charges/cumulative charge; meter at the substation
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H04M2215/825 2 Select from different charging routines or algorithms or formulas
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H04M2215/92 1 Autonomous calculations of charges in terminal, i.e. meter not controlled from exchange
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H04M2215/96 1 Distributed calculation of charges, e.g. in different nodes like for mobiles between HLR and VLR, or between the terminal and the billing function
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H04M2242/00 0 Special services or facilities
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H04M2242/02 1 Broadcasting
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H04M2242/04 1 for emergency applications
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H04M2242/06 1 Lines and connections with preferential service
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H04M2242/08 1 menus for interactive user guidance
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H04M2242/10 1 Secret communications
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H04M2242/12 1 Language recognition, selection or translation arrangements
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H04M2242/14 1 with services dependent on location (where the service is an information service H04M2242/15; services independent of location H04M3/42229)
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H04M2242/15 1 Information service where the information is dependent on the location of the subscriber
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H04M2242/16 1 with computer telephone integration
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H04M2242/18 1 Automated outdialling systems
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H04M2242/20 1 Televoting service
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H04M2242/22 1 Automatic class or number identification arrangements
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H04M2242/24 1 Detection or indication of type terminal or call, (e.g. fax, broadband)
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H04M2242/26 1 Paging systems
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H04M2242/28 1 Services making use of subscriber schedule information
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H04M2242/30 1 Determination of the location of a subscriber
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H04M2242/40 1 Data synchronization between user terminals and central server
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H04M2242/405 2 Incremental backup
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H04M2250/00 0 Details of telephonic subscriber devices
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H04M2250/02 1 including a Bluetooth interface
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H04M2250/04 1 including near field communication means, e.g. RFID
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H04M2250/06 1 including a wireless LAN interface
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H04M2250/08 1 home cordless telephone systems using the DECT standard
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H04M2250/10 1 including a GPS signal receiver
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H04M2250/12 1 including a sensor for measuring a physical value, e.g. temperature or motion (telephones including GPS signal receivers H04M2250/10)
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H04M2250/14 1 including a card reading device
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H04M2250/16 1 including more than one display unit
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H04M2250/18 1 including more than one keyboard unit
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H04M2250/20 1 including a rotatable camera
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H04M2250/22 1 including a touch pad, a touch sensor or a touch detector (digitizers for touch screens G06F3/041)
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H04M2250/52 1 including functional features of a camera (constructional features concerning the integration of cameras in portable phones H04M1/0264)
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H04M2250/54 1 including functional features of a projector or beamer module assembly (constructional features concerning the integration of projectors in portable phones H04M1/0272)
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H04M2250/56 1 including a user help function
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H04M2250/58 1 including a multilanguage function
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H04M2250/60 1 logging of communication history, e.g. outgoing or incoming calls, missed calls, messages or URLs (logging of telephone numbers H04M1/56, H04M1/57)
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H04M2250/62 1 user interface aspects of conference calls
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H04M2250/64 1 file transfer between terminals (download of applications H04M1/72406; transfer of messages, e.g. SMS, e-mail or MMS H04M1/7243)
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H04M2250/66 1 user interface aspects for indicating selection options for a communication line
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H04M2250/68 1 with means for recording information, e.g. telephone number during a conversation (recording of telephone conversations H04M1/656)
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H04M2250/70 1 methods for entering alphabetical characters, e.g. multi-tap or dictionary disambiguation (methods for entering alphabetical characters per se G06F3/0237)
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H04M2250/72 1 user manuals of subscriber equipments, e.g. of mobile phones
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H04M2250/74 1 with voice recognition means (voice activated dialling H04M1/271; voice recognition algorithms G10L15/00)
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H04N PICTORIAL COMMUNICATION, e.g. TELEVISION
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H04N1/00 0 Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
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H04N1/00002 1 {Diagnosis, testing or measuring; Detecting, analysing or monitoring not otherwise provided for (error detection, error correction or monitoring in digital computers or digital computer components G06F11/00)}
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H04N1/00005 2 {relating to image data}
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H04N1/00007 2 {relating to particular apparatus or devices}
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H04N1/0001 3 {Transmission systems or arrangements}
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H04N1/00013 3 {Reading apparatus}
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H04N1/00015 3 {Reproducing apparatus}
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H04N1/00018 3 {Scanning arrangements}
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H04N1/00021 3 {Picture signal circuits}
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H04N1/00023 3 {Colour systems}
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H04N1/00026 2 {Methods therefor}
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H04N1/00029 3 {Diagnosis, i.e. identifying a problem by comparison with a normal state}
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H04N1/00031 3 {Testing, i.e. determining the result of a trial (H04N1/00029 takes precedence; using test signals for transmission mode changing H04N2201/33371)}
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H04N1/00034 3 {Measuring, i.e. determining a quantity by comparison with a standard (H04N1/00031 takes precedence)}
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H04N1/00037 3 {Detecting, i.e. determining the occurrence of a predetermined state (H04N1/00031 takes precedence)}
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H04N1/00039 3 {Analysis, i.e. separating and studying components of a greater whole}
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H04N1/00042 3 {Monitoring, i.e. observation (H04N1/00029 - H04N1/00039 take precedence)}
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H04N1/00045 3 {using a reference pattern designed for the purpose, e.g. a test chart}
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H04N1/00047 3 {using an image not specifically designed for the purpose}
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H04N1/0005 3 {in service, i.e. during normal operation}
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H04N1/00053 3 {out of service, i.e. outside of normal operation}
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H04N1/00055 3 {automatically on a periodic basis}
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H04N1/00058 3 {using a separate apparatus}
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H04N1/00061 4 {using a remote apparatus (H04N1/00066 takes precedence)}
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H04N1/00063 3 {using at least a part of the apparatus itself, e.g. self-testing}
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H04N1/00066 3 {using a program downloaded or received from another apparatus}
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H04N1/00068 3 {Calculating or estimating}
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H04N1/00071 2 {characterised by the action taken}
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H04N1/00074 3 {Indicating or reporting (details of user-machine interface H04N1/0035)}
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H04N1/00076 4 {locally}
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H04N1/00079 4 {remotely}
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H04N1/00082 3 {Adjusting or controlling (interrupting an operation H04N1/00915; inhibiting an operation H04N1/00925)}
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H04N1/00084 4 {Recovery or repair, e.g. self-repair}
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H04N1/00087 4 {Setting or calibrating (picture signal circuits H04N1/40)}
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H04N1/0009 3 {Storage}
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H04N1/00092 2 {relating to the original or to the reproducing medium, e.g. imperfections or dirt (detecting properties of a sheet H04N1/00681)}
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H04N1/00095 1 {Systems or arrangements for the transmission of the picture signal}
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H04N1/00098 2 {via a television channel, e.g. for a series of still pictures with or without sound}
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H04N1/001 2 {specially adapted for transmission via digital wireline networks (H04N1/00098 takes precedence)}
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H04N1/00103 2 {specially adapted for radio transmission, e.g. via satellites (H04N1/00098 takes precedence)}
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H04N1/00106 3 {using land mobile radio networks, e.g. mobile telephone}
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H04N1/00108 3 {of digital signals}
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H04N1/00111 2 {specially adapted for optical transmission}
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H04N1/00114 2 {with transmission of additional information signals (for control or supervision between transmitter and receiver H04N1/32101)}
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H04N1/00116 3 {of multimedia information}
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H04N1/00119 3 {of sound information only}
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H04N1/00122 3 {of text or character information only}
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H04N1/00124 3 {of video information only}
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H04N1/00127 1 {Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture}
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H04N1/00129 2 {with a display device, e.g. CRT or LCD monitor (with a television apparatus H04N1/00283; arrangements for control of display devices G09G)}
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H04N1/00132 2 {in a digital photofinishing system, i.e. a system where digital photographic images undergo typical photofinishing processing, e.g. printing ordering}
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H04N1/00135 3 {Scanning of a photographic original}
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H04N1/00137 3 {Transmission}
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H04N1/0014 4 {via e-mail}
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H04N1/00143 3 {Ordering}
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H04N1/00145 4 {from a remote location}
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H04N1/00148 3 {Storage (information retrieval G06F16/00)}
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H04N1/00151 4 {with selective access}
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H04N1/00153 5 {for sharing images with a selected individual or correspondent}
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H04N1/00156 6 {with a group of selected individuals or correspondents}
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H04N1/00159 4 {for sharing images without access restriction, e.g. publishing images}
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H04N1/00161 3 {Viewing or previewing}
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H04N1/00164 4 {at a remote location}
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H04N1/00167 3 {Processing or editing (H04N1/00196 - H04N1/00201 take precedence)}
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H04N1/00169 3 {Digital image input}
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H04N1/00172 4 {directly from a still digital camera or from a storage medium mounted in a still digital camera (H04N1/0018 takes precedence)}
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H04N1/00175 4 {from a still image storage medium (H04N1/00172, H04N1/0018 take precedence)}
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H04N1/00177 4 {from a user terminal, e.g. personal computer}
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H04N1/0018 4 {of images captured using a loaned, rented or limited-use still digital camera, e.g. recyclable or disposable camera}
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H04N1/00183 3 {Photography assistance, e.g. displaying suggestions to the user}
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H04N1/00185 3 {Image output (for details of particular output arrangements see the relevant sub-class, e.g. B41J, G03B, G09G, G11B)}
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H04N1/00188 4 {Printing, e.g. prints or reprints (H04N1/0019, H04N1/00196 take precedence)}
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H04N1/0019 4 {on souvenir-type products or the like, e.g. T-shirts or mugs}
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H04N1/00193 4 {to a portable storage medium, e.g. a read-writable compact disk}
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H04N1/00196 4 {Creation of a photo-montage, e.g. photoalbum (H04N1/0019 takes precedence)}
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H04N1/00198 4 {Creation of a soft photo presentation, e.g. digital slide-show}
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H04N1/00201 4 {Creation of a lenticular or stereo hardcopy image}
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H04N1/00204 2 {with a digital computer or a digital computer system, e.g. an internet server (programmed control between transmitter and receiver or between image input and image output device H04N1/32561)}
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H04N1/00206 3 {Transmitting or receiving computer data via an image communication device, e.g. a facsimile transceiver (H04N1/00236 takes precedence)}
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H04N1/00209 3 {Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax}
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H04N1/00212 4 {Attaching image data to computer messages, e.g. to e-mails}
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H04N1/00214 4 {details of transmission}
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H04N1/00217 5 {only involving computer data transmission protocols, e.g. SMTP, WAP or HTTP (communication protocol aspects and techniques in packet data networks H04L69/00; network-specific arrangements or communication protocols supporting networked applications H04L67/00)}
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H04N1/0022 5 {involving facsimile protocols or a combination of facsimile protocols and computer data transmission protocols}
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H04N1/00222 4 {details of image data generation or reproduction, e.g. scan-to-email or network printing}
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H04N1/00225 5 {details of image data generation, e.g. scan-to-email or network scanners (using an image reading device as a local input to a computer H04N1/00241)}
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H04N1/00228 5 {Image push arrangements, e.g. from an image reading device to a specific network destination (push-based network services H04L67/55)}
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H04N1/0023 5 {Image pull arrangements, e.g. to a multifunctional peripheral from a networked computer}
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H04N1/00233 5 {details of image data reproduction, e.g. network printing or remote image display (using an image reproducing device as a local output from a computer H04N1/00238; digital output from computer to printer unit G06F3/12)}
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H04N1/00236 3 {using an image reading or reproducing device, e.g. a facsimile reader or printer, as a local input to or local output from a computer (image input to or image output from a computer via a network H04N1/00209)}
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H04N1/00238 4 {using an image reproducing device as a local output from a computer (output via network, e.g. network printing H04N1/00233)}
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H04N1/00241 4 {using an image reading device as a local input to a computer (input via network, e.g. network scanners H04N1/00225)}
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H04N1/00244 3 {with a server, e.g. an internet server (fax-servers or the like for store and forward H04N1/324)}
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H04N1/00246 2 {with an optical device, e.g. an optical viewing aid}
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H04N1/00249 2 {with a photographic apparatus, e.g. a photographic printer or a projector (photographic apparatus per se G03B, G03D)}
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H04N1/00251 3 {with an apparatus for taking photographic images, e.g. a camera}
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H04N1/00254 3 {with an electrophotographic copying machine, i.e. a photocopier}
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H04N1/00257 3 {with an electro-developing recording medium, e.g. generating image signals by reading such a medium in a still camera}
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H04N1/00259 3 {with an apparatus for processing exposed photographic materials}
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H04N1/00262 4 {Reading a film during its processing, e.g. generating image signals from a film while the photographic image on the film is in the process of being developed}
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H04N1/00265 3 {with a photographic printing apparatus}
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H04N1/00267 3 {with a viewing or projecting apparatus, e.g. for reading image information from a film (H04N1/00262 takes precedence)}
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H04N1/0027 3 {Reading or writing of non-image information from or to a photographic material, e.g. processing data stored in a magnetic track}
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H04N1/00273 3 {with apparatus for handling photographic material}
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H04N1/00275 3 {Recording image information on a photographic material}
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H04N1/00278 2 {with a printing apparatus, e.g. a laser beam printer}
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H04N1/00281 2 {with a telecommunication apparatus, e.g. a switched network of teleprinters for the distribution of text-based information, a selective call terminal (details of transmission H04N1/00095; establishing a communication with one of a facsimile machine or another apparatus sharing a single line H04N1/32704; interfacing cordless telephone terminals with an accessory to increase the functionality of user interface H04M1/72409)}
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H04N1/00283 3 {with a television apparatus}
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H04N1/00286 4 {with studio circuitry, devices or equipment, e.g. television cameras (television studio circuitry, devices or equipment per se H04N5/222)}
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H04N1/00289 5 {in a video photo booth or the like}
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H04N1/00291 4 {with receiver circuitry (television receiver circuitry per se H04N5/44)}
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H04N1/00294 5 {for printing images at a television receiver}
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H04N1/00297 4 {with a television signal recorder, e.g. for recording facsimile images on a VCR (motion video recording combined with still video recording in a still video camera H04N1/212)}
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H04N1/00299 4 {with a television transmission apparatus, e.g. a videophone, a teletext system or a digital television system}
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H04N1/00302 3 {with a telephonic apparatus, e.g. telephone answering machine or videotex terminal (H04N1/00307 takes precedence; telephonic communication H04M)}
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H04N1/00305 4 {with a cordless telephone apparatus}
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H04N1/00307 3 {with a mobile telephone apparatus (constructional features of portable telephone sets H04M1/0202; mobile radio systems H04W84/00)}
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H04N1/0031 3 {with a selective call apparatus, e.g. a paging device (selective call receivers H04W88/022; selective call encoders H04W88/185)}
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H04N1/00312 3 {with a digital transmission apparatus, e.g. a switched network of teleprinters for the distribution of text-based information, SMS or ISDN device (transmitting or receiving via a computer, e.g. using e-mail, a computer network or the internet H04N1/00214; transmission of digital information H04L)}
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H04N1/00315 3 {with a radio transmission apparatus (with a cordless telephone H04N1/00305; systems or arrangements for the transmission of a picture signal specially adapted for transmission via radio H04N1/00103; H04N1/00307 takes precedence; radio transmission systems H04B7/00; wireless communication networks H04W)}
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H04N1/00318 3 {with a multi-media apparatus}
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H04N1/0032 2 {with a medium handling apparatus, e.g. a sheet sorter (handling thin or filamentary material, e.g. sheets B65H)}
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H04N1/00323 2 {with a measuring, monitoring or signaling apparatus, e.g. for transmitting measured information to a central location}
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H04N1/00326 2 {with a data reading, recognizing or recording apparatus, e.g. with a bar-code apparatus (arrangements for the associated working of recording or reproducing apparatus with related apparatus G11B31/00)}
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H04N1/00328 3 {with an apparatus processing optically-read information}
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H04N1/00331 4 {with an apparatus performing optical character recognition (character recognition G06V30/10)}
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H04N1/00334 4 {with an apparatus processing barcodes or the like (arrangements for sensing record carriers G06K7/00)}
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H04N1/00336 4 {with an apparatus performing pattern recognition, e.g. of a face or a geographic feature (image or video recognition or understanding of scenes G06V20/00)}
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H04N1/00339 3 {with an electronic or magnetic storage medium I/O device (RFID or the like H04N1/00342)}
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H04N1/00342 3 {with a radio frequency tag transmitter or receiver (storage of additional information in an RFID tag attached to an image bearing paper sheet H04N1/32138)}
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H04N1/00344 2 {with a management, maintenance, service or repair apparatus (monitoring H04N1/00002)}
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H04N1/00347 2 {with another still picture apparatus, e.g. hybrid still picture apparatus (circuits or arrangements for control or supervision between image input and image output device H04N1/32)}
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H04N1/0035 1 {User-machine interface; Control console (input or output arrangements for computers G06F3/00)}
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H04N1/00352 2 {Input means (H04N1/00411 takes precedence; input arrangements for computers G06F3/00)}
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H04N1/00355 3 {Mark-sheet input (sensing record carriers G06K7/00; character recognition G06V30/10; document-oriented image-based pattern recognition G06V30/40)}
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H04N1/00358 4 {Type of the scanned marks}
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H04N1/0036 5 {Alphanumeric symbols}
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H04N1/00363 5 {Bar codes or the like}
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H04N1/00366 5 {Marks in boxes or the like, e.g. crosses or blacking out (H04N1/0036 takes precedence)}
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H04N1/00368 4 {Location of the scanned marks}
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H04N1/00371 5 {on a separate sheet}
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H04N1/00374 5 {on the same page as at least a part of the image}
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H04N1/00376 4 {Means for identifying a mark sheet or area}
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H04N1/00379 4 {Means for enabling correct scanning of a mark sheet or area, e.g. registration or timing marks}
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H04N1/00381 3 {Input by recognition or interpretation of visible user gestures (manual input means, e.g. digitisers, writing tablets H04N1/00392; gesture input to computers G06F3/017; recognition algorithms G06V40/20)}
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H04N1/00384 3 {Key input means, e.g. buttons or keypads (electromechanical details of key input means in general H01H13/00)}
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H04N1/00387 4 {Multiple functions per key}
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H04N1/00389 4 {Programmable function keys, e.g. for one-touch operation (H04N1/00387 takes precedence; for automation of transmitter jobs H04N1/32058)}
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H04N1/00392 3 {Other manual input means, e.g. digitisers or writing tablets}
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H04N1/00395 3 {Arrangements for reducing operator input (input arrangements for job or mode instructions or parameters H04N1/00962; intelligent menu interfaces H04N1/00437)}
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H04N1/00397 3 {Switches, knobs or the like}
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H04N1/004 4 {Rocker or tumbler switches}
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H04N1/00403 3 {Voice input means, e.g. voice commands}
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H04N1/00405 2 {Output means (output arrangements for computers G06F3/00)}
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H04N1/00408 3 {Display of information to the user, e.g. menus}
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H04N1/00411 4 {the display also being used for user input, e.g. touch screen}
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H04N1/00413 4 {using menus, i.e. presenting the user with a plurality of selectable options (H04N1/00464 takes precedence)}
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H04N1/00416 5 {Multi-level menus}
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H04N1/00419 6 {Arrangements for navigating between pages or parts of the menu}
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H04N1/00421 7 {using drop-down menus}
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H04N1/00424 7 {using a list of graphical elements, e.g. icons or icon bar}
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H04N1/00427 7 {using a menu list (H04N1/00421, H04N1/00424, H04N1/00429 take precedence)}
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H04N1/00429 7 {using a navigation tree}
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H04N1/00432 7 {using tabs}
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H04N1/00435 6 {arranged in a predetermined sequence, e.g. using next and previous buttons}
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H04N1/00437 5 {Intelligent menus, e.g. anticipating user selections}
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H04N1/0044 4 {for image preview or review, e.g. to help the user position a sheet}
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H04N1/00442 5 {Simultaneous viewing of a plurality of images, e.g. using a mosaic display arrangement of thumbnails}
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H04N1/00445 6 {arranged in a one dimensional array}
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H04N1/00448 7 {horizontally}
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H04N1/0045 7 {vertically}
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H04N1/00453 6 {arranged in a two dimensional array}
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H04N1/00456 6 {for layout preview, e.g. page layout}
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H04N1/00458 5 {Sequential viewing of a plurality of images, e.g. browsing or scrolling}
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H04N1/00461 5 {marking or otherwise tagging one or more displayed image, e.g. for selective reproduction}
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H04N1/00464 4 {using browsers, i.e. interfaces based on mark-up languages}
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H04N1/00466 4 {displaying finishing information, e.g. position of punch holes or staple or orientation references}
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H04N1/00469 4 {with enlargement of a selected area of the displayed information}
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H04N1/00472 4 {using a pop-up window}
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H04N1/00474 3 {outputting a plurality of functional options, e.g. scan, copy or print}
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H04N1/00477 3 {Indicating status, e.g. of a job (for control or supervision between transmitter and receiver or between image input and image output device H04N2201/3219)}
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H04N1/0048 3 {Indicating an illegal or impossible operation or selection to the user}
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H04N1/00482 3 {outputting a plurality of job set-up options, e.g. number of copies, paper size or resolution}
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H04N1/00485 3 {providing a hardcopy output to the user, e.g. print out}
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H04N1/00488 3 {providing an audible output to the user}
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H04N1/0049 3 {providing a visual indication to the user, e.g. using a lamp (H04N1/00408 takes precedence)}
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H04N1/00493 2 {Particular location of the interface or console}
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H04N1/00496 2 {Constructional details of the interface or console not otherwise provided for, e.g. rotating or tilting means}
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H04N1/00498 2 {Multi-lingual facilities}
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H04N1/00501 2 {Tailoring a user interface [UI] to specific requirements}
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H04N1/00503 3 {Customising to a particular machine or model, machine function or application}
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H04N1/00506 3 {Customising to the data to be displayed}
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H04N1/00509 3 {Personalising for a particular user or group of users, e.g. a workgroup or company}
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H04N1/00511 4 {for a group of users, e.g. a workgroup, company, or a service provider}
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H04N1/00514 4 {for individual users}
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H04N1/00517 4 {involving favourite or frequently used settings}
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H04N1/00519 1 {Constructional details not otherwise provided for, e.g. housings, covers}
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H04N1/00522 2 {Reducing apparatus footprint, e.g. wall-mounted or vertically arranged apparatus}
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H04N1/00525 2 {Providing a more compact apparatus, e.g. sheet discharge tray in cover}
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H04N1/00527 3 {Discharge tray at least partially sandwiched between image generating and reproducing components}
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H04N1/0053 3 {Discharge tray in cover}
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H04N1/00533 3 {using slidably mounted components, e.g. reader in drawer}
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H04N1/00535 3 {using rotatably mounted or foldable components}
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H04N1/00538 2 {Modular devices, i.e. allowing combinations of separate components, removal or replacement of components}
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H04N1/00541 3 {with detachable image reading apparatus}
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H04N1/00543 2 {Allowing easy access, e.g. for maintenance or in case of paper jam (H04N1/00538 takes precedence)}
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H04N1/00546 3 {using a side opening}
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H04N1/00549 2 {Counter-measures for mechanical vibration not otherwise provided for}
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H04N1/00551 2 {Top covers or the like}
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H04N1/00554 3 {Latches or hinges therefor}
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H04N1/00557 2 {Connection or assembly of components or elements (H04N1/00538 takes precedence)}
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H04N1/00559 2 {Mounting or support of components or elements (H04N1/00538 takes precedence)}
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H04N1/00562 2 {Supporting the apparatus as a whole, e.g. stands}
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H04N1/00564 2 {Constructional details relating to ergonomic aspects}
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H04N1/00567 1 {Handling of original or reproduction media, e.g. cutting, separating, stacking}
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H04N1/0057 2 {Conveying sheets before or after scanning (arrangements for conveying sheets as part of the scanning operation H04N1/04 and subgroups)}
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H04N1/00572 3 {with refeeding for double-sided scanning, e.g. using one scanning head for both sides of a sheet}
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H04N1/00575 4 {Inverting the sheet prior to refeeding}
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H04N1/00578 5 {using at least part of a loop, e.g. using a return loop}
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H04N1/0058 5 {using at least one dead-end path, e.g. using a sheet ejection path}
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H04N1/00583 5 {by rotating the sheet about an axis lying in its plane}
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H04N1/00586 4 {Inverting the scanning elements with respect to the scanning plane prior to refeeding}
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H04N1/00588 3 {to the scanning position (H04N1/00572, H04N1/00594 take precedence)}
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H04N1/00591 3 {from the scanning position (H04N1/00572 takes precedence)}
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H04N1/00594 4 {along at least a part of the same path as transport to the scanning position (H04N1/00575 takes precedence)}
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H04N1/00596 3 {using at least a part of the apparatus in common for transporting to or from a plurality of scanning positions, e.g. for reading and printing}
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H04N1/00599 3 {Using specific components (details of components related to handling thin or filamentary material B65H)}
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H04N1/00602 4 {Feed rollers}
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H04N1/00604 4 {Transport trays}
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H04N1/00607 4 {Grippers or the like, e.g. suction grippers}
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H04N1/0061 4 {Feed belts}
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H04N1/00612 4 {Path switches (H04N1/00575, H04N1/00623, H04N1/00633 take precedence)}
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H04N1/00615 4 {Guiding elements, e.g. plates}
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H04N1/00618 3 {Transporting curved sheets or curving sheets during transportation, e.g. for feeding to a drum-type scanner}
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H04N1/0062 2 {Removing sheets from a stack or inputting media}
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H04N1/00623 3 {Selectively inputting media from one of a plurality of input sources, e.g. input trays}
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H04N1/00625 3 {Removing sheets selectively from the top or bottom of a single stack or tray}
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H04N1/00628 2 {Separating, e.g. preventing feeding of two sheets at a time}
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H04N1/00631 2 {Ejecting or stacking (H04N1/00641 takes precedence)}
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H04N1/00633 3 {selectively to one of a plurality of output trays (H04N1/00641 takes precedence)}
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H04N1/00636 3 {Ejecting sheets selectively to the top or bottom of a single stack or tray}
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H04N1/00639 2 {Binding, stapling, folding or perforating, e.g. punching}
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H04N1/00641 2 {Sorting, reordering or inverting (postal sorting or sorting individual articles B07C)}
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H04N1/00644 2 {Counting or calculating, e.g. a number of remaining sheets}
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H04N1/00647 2 {Decurling}
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H04N1/00649 2 {Control or synchronising different handling operations (H04N1/00657 takes precedence)}
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H04N1/00652 3 {Control of feeding speed, e.g. fast feeding to scanning position (H04N1/00673 takes precedence)}
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H04N1/00655 2 {Apparatus in common for different handling operations (H04N1/00575, H04N1/00594, H04N1/00596, H04N1/00618 take precedence)}
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H04N1/00657 2 {Compensating for different handling speeds of different apparatus or arrangements for handling a plurality of sheets simultaneously, e.g. mechanical buffering}
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H04N1/0066 2 {Aligning or positioning related to handling}
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H04N1/00663 2 {Indicating relating to handling of media}
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H04N1/00665 2 {Details specific to handling of web-shaped media, e.g. paper or film rolls}
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H04N1/00668 3 {Removing the medium from a cassette, spindle or the like}
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H04N1/00671 3 {Winding or feeding the medium into a cassette or onto a spindle or the like}
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H04N1/00673 3 {Controlling the amount of slack or tension control}
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H04N1/00676 3 {Cutting}
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H04N1/00679 4 {after scanning}
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H04N1/00681 1 {Detecting the presence, position or size of a sheet or correcting its position before scanning (H04N1/047 takes precedence; mode signalling H04N1/333; skew detection or correction in image signals H04N1/3878)}
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H04N1/00684 2 {Object of the detection}
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H04N1/00687 3 {Presence or absence}
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H04N1/00689 4 {Presence}
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H04N1/00692 4 {Absence}
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H04N1/00694 4 {in an input tray}
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H04N1/00697 4 {in an output tray}
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H04N1/007 4 {of holder, e.g. film mount}
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H04N1/00702 3 {Position}
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H04N1/00705 4 {at a plurality of spaced apart locations, e.g. as a sheet is fed through the apparatus}
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H04N1/00708 3 {Size or dimensions}
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H04N1/0071 4 {Width}
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H04N1/00713 4 {Length}
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H04N1/00716 4 {Thickness}
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H04N1/00718 3 {Skew}
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H04N1/00721 3 {Orientation}
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H04N1/00724 3 {Type of sheet, e.g. colour of paper or transparency}
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H04N1/00726 3 {Other properties of the sheet, e.g. curvature or reflectivity}
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H04N1/00729 2 {Detection means}
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H04N1/00732 3 {Mechanical detectors}
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H04N1/00734 3 {Optical detectors}
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H04N1/00737 4 {using the scanning elements as detectors}
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H04N1/0074 5 {using inactive scanning elements, e.g. elements outside the scanning area}
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H04N1/00742 2 {Detection methods}
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H04N1/00745 3 {Detecting the leading or trailing ends of a moving sheet}
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H04N1/00748 3 {Detecting edges, e.g. of a stationary sheet}
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H04N1/0075 3 {Detecting a change in reflectivity}
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H04N1/00753 4 {of a sheet relative to a particular backgroud}
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H04N1/00755 3 {Detecting an interruption of light}
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H04N1/00758 3 {using a prescan}
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H04N1/00761 3 {using reference marks, e.g. on sheet, sheet holder or guide}
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H04N1/00763 2 {Action taken as a result of detection}
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H04N1/00766 3 {Storing data}
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H04N1/00769 3 {Comparing, e.g. with threshold}
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H04N1/00771 3 {Indicating or reporting, e.g. issuing an alarm}
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H04N1/00774 3 {Adjusting or controlling}
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H04N1/00777 4 {Inhibiting, e.g. an operation}
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H04N1/00779 4 {Adjusting settings, e.g. mode, feeding rate or type of paper}
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H04N1/00782 4 {Initiating operations}
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H04N1/00785 2 {Correcting the position of a sheet before scanning}
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H04N1/00787 3 {using mechanical means}
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H04N1/0079 3 {using guide or holder}
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H04N1/00793 3 {using paper feeding mechanism, e.g. operate drive rollers at different speeds}
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H04N1/00795 1 {Reading arrangements (details of scanning heads H04N1/024; scanning arrangements therefor H04N1/04)}
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H04N1/00798 2 {Circuits or arrangements for the control thereof, e.g. using a programmed control device or according to a measured quantity}
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H04N1/00801 3 {according to characteristics of the original}
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H04N1/00803 4 {Presence or absence of information}
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H04N1/00806 4 {According to type of the original, e.g. colour paper or transparency, or reading a plurality of different types of original}
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H04N1/00809 4 {Orientation}
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H04N1/00811 3 {according to user specified instructions, e.g. user selection of reading mode}
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H04N1/00814 3 {according to a detected condition or state of the reading apparatus, e.g. temperature}
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H04N1/00816 3 {Determining the reading area, e.g. eliminating reading of margins}
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H04N1/00819 3 {Self-calibrating reading means}
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H04N1/00822 3 {Selecting or setting a particular reading mode, e.g. from amongst a plurality of modes, simplex or duplex, or high or low resolution}
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H04N1/00824 3 {for displaying or indicating, e.g. a condition or state (details of displaying or indicating means H04N1/00405)}
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H04N1/00827 2 {Arrangements for reading an image from an unusual original, e.g. 3-dimensional objects}
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H04N1/0083 1 {Arrangements for transferring signals between different components of the apparatus, e.g. arrangements of signal lines or cables (for control or supervision between image input and output device H04N1/32)}
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H04N1/00832 1 {Recording use, e.g. counting number of pages copied}
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H04N1/00835 1 {Detecting external or ambient light}
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H04N1/00838 1 {Preventing unauthorised reproduction}
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H04N1/0084 2 {Determining the necessity for prevention}
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H04N1/00843 3 {based on recognising a copy prohibited original, e.g. a banknote (pattern authentication and markers therefor, forgery detection G06V20/95; character recognition G06V30/10; document-oriented image-based pattern recognition G06V30/40; testing paper currency or similar valuable papers for genuineness G07D7/00)}
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H04N1/00846 4 {based on detection of a dedicated indication, e.g. marks or the like}
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H04N1/00848 4 {by detecting a particular original}
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H04N1/00851 4 {externally to or remotely from the reproduction apparatus, e.g. using a connected apparatus}
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H04N1/00854 3 {Recognising an unauthorised user or user-associated action}
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H04N1/00856 2 {Preventive measures}
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H04N1/00859 3 {Issuing an alarm or the like}
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H04N1/00862 3 {Retaining the original}
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H04N1/00864 3 {Modifying the reproduction, e.g. outputting a modified copy of a scanned original (details of composing or otherwise geometrically modifying originals H04N1/387)}
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H04N1/00867 4 {with additional data, e.g. by adding a warning message (details of embedding additional information in an image H04N1/32144)}
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H04N1/0087 5 {with hidden additional data, e.g. data invisible to the human eye}
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H04N1/00872 4 {by image quality reduction, e.g. distortion or blacking out}
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H04N1/00875 3 {Inhibiting reproduction, e.g. by disabling reading or reproduction apparatus}
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H04N1/00877 3 {Recording information, e.g. details of the job}
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H04N1/0088 2 {Detecting or preventing tampering attacks on the reproduction system}
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H04N1/00883 2 {Auto-copy-preventive originals, i.e. originals that are designed not to allow faithful reproduction}
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H04N1/00885 1 {Power supply means, e.g. arrangements for the control of power supply to the apparatus or components thereof}
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H04N1/00888 2 {Control thereof}
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H04N1/00891 3 {Switching on or off, e.g. for saving power when not in use (H04N1/00896 takes precedence)}
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H04N1/00893 3 {using a back-up supply, e.g. in case of main-supply failure}
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H04N1/00896 3 {using a low-power mode, e.g. standby}
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H04N1/00899 2 {Detection of supply level or supply failure}
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H04N1/00901 2 {Using different supplies or connection to an external supply (H04N1/00893, H04N1/00896 take precedence)}
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H04N1/00904 2 {Arrangements for supplying power to different circuits or for supplying power at different levels (H04N1/00896 takes precedence)}
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H04N1/00907 2 {Details of supply connection, e.g. arrangement of power cables (H04N1/00901 and H04N1/00904 take precedence)}
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H04N1/00909 1 {Cleaning arrangements or preventing or counter-acting contamination from dust or the like (cleaning in general, prevention of fouling in general B08B)}
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H04N1/00912 1 {Arrangements for controlling a still picture apparatus or components thereof not otherwise provided for}
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H04N1/00915 2 {Assigning priority to, or interrupting, a particular operation}
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H04N1/00917 3 {Resuming after an intentional interruption, e.g. resetting parameters}
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H04N1/0092 3 {Assigning priority according to size job or task, e.g. small jobs first}
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H04N1/00923 3 {Variably assigning priority (H04N1/0092 takes precedence)}
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H04N1/00925 2 {Inhibiting an operation}
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H04N1/00928 2 {Initialisation or control of normal start-up or shut-down, i.e. non failure or error related}
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H04N1/00931 2 {Synchronising different operations or sub-apparatus, e.g. controlling on-times taking into account different warm-up times}
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H04N1/00933 2 {Timing control or synchronising (H04N1/00928, H04N1/00931, H04N1/00954 and H04N1/0096 take precedence)}
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H04N1/00936 2 {Skipping a function or process step}
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H04N1/00938 2 {Software related arrangements, e.g. loading applications (program loading in general G06F9/445)}
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H04N1/00941 3 {Interaction of different applications (H04N1/00949 takes precedence; multiprogramming arrangements of computers G06F9/46)}
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H04N1/00944 3 {using hot folders, i.e. folders or directories which trigger an action when written to or accessed}
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H04N1/00946 4 {Details of actions associated with a hot folder}
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H04N1/00949 3 {Combining applications, e.g. to create workflows (allocation of computer machine resources considering the execution order of a plurality of tasks G06F9/5038)}
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H04N1/00952 2 {Using a plurality of control devices, e.g. for different functions}
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H04N1/00954 2 {Scheduling operations or managing resources (H04N1/0096 takes precedence; program initiating or switching G06F9/48; allocation of computer resources G06F9/50)}
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H04N1/00957 2 {Compiling jobs, e.g. for batch processing (H04N1/3208 takes precedence; program code compilation G06F8/41)}
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H04N1/0096 2 {Simultaneous or quasi-simultaneous functioning of a plurality of operations (H04N1/32545 takes precedence; multiprogramming arrangements of computers G06F9/46)}
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H04N1/00962 1 {Input arrangements for operating instructions or parameters, e.g. updating internal software (program loading in general G06F9/445; network-specific protocols involving the movement of software or configuration parameters H04L67/34)}
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H04N1/00965 2 {using a plug-in memory module, e.g. memory card, memory stick}
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H04N1/00968 2 {by scanning marks on a sheet (mark-sheet input means H04N1/00355; sensing record carriers G06K7/00)}
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H04N1/0097 2 {Storage of instructions or parameters, e.g. customised instructions or different parameters for different user IDs}
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H04N1/00973 2 {from a remote device, e.g. receiving via the internet instructions input to a computer terminal}
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H04N1/00976 1 {Arrangements for regulating environment, e.g. removing static electricity}
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H04N1/00978 2 {Temperature control}
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H04N1/00981 3 {by forced convection, e.g. using fans}
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H04N1/00984 4 {using fins or the like}
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H04N1/00986 3 {Heating}
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H04N1/00989 3 {by natural convection, e.g. using fins without a fan}
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H04N1/00992 2 {Humidity control, e.g. removing condensation}
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H04N1/00994 2 {Compensating for electric noise, e.g. electromagnetic interference}
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H04N1/00997 2 {Light control, e.g. shielding from ambient light or preventing light leakage}
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H04N1/024 1 Details of scanning heads {; Means for illuminating the original}
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H04N1/02409 2 {Focusing, i.e. adjusting the focus of the scanning head}
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H04N1/02418 2 {for picture information pick up and reproduction}
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H04N1/02427 3 {in different planes}
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H04N1/02436 4 {using a single head selectively and alternately arranged to scan in the different planes}
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H04N1/02445 3 {in the same plane}
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H04N1/02454 3 {using interchangeable heads}
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H04N1/02463 3 {using heads mounted on the same support or substrate}
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H04N1/02472 3 {using a single head, i.e. for pick up and reproduction (H04N1/02436 takes precedence)}
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H04N1/02481 2 {Arrangements for positioning elements within a head (H04N1/02409 takes precedence)}
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H04N1/0249 2 {Arrangements for mounting or supporting elements within a scanning head (H04N1/02481 takes precedence)}
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H04N1/028 2 for picture information pick-up
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H04N1/02805 3 {with photodetectors arranged in a two-dimensional array}
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H04N1/0281 3 {with means for collecting light from a line or an area of the original and for guiding it to only one or a relatively low number of picture element detectors}
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H04N1/02815 3 {Means for illuminating the original, not specific to a particular type of pick-up head}
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H04N1/0282 4 {Using a single or a few point light sources, e.g. a laser diode}
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H04N1/02825 5 {in combination with at least one reflector which is fixed in relation to the light source (H04N1/02835 and H04N1/0284 take precedence)}
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H04N1/0283 5 {in combination with a light deflecting element, e.g. a rotating mirror}
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H04N1/02835 5 {in combination with a light guide, e.g. optical fibre, glass plate (light-guides per se G02B6/00)}
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H04N1/0284 5 {in combination with a light integrating, concentrating or diffusing cavity}
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H04N1/02845 4 {using an elongated light source, e.g. tubular lamp, LED array}
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H04N1/0285 5 {in combination with at least one reflector which is in fixed relation to the light source}
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H04N1/02855 5 {in combination with a light guide, e.g. optical fibre, glass plate (light-guides per se G02B6/00)}
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H04N1/0286 5 {in combination with a light integrating, concentrating or defusing cavity}
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H04N1/02865 5 {using an array of light sources or a combination of such arrays, e.g. an LED bar}
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H04N1/0287 5 {using a tubular lamp or a combination of such lamps}
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H04N1/02875 6 {comprising a reflective coating}
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H04N1/0288 4 {using a two-dimensional light source, e.g. two-dimensional LED array}
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H04N1/02885 4 {Means for compensating spatially uneven illumination, e.g. an aperture arrangement}
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H04N1/0289 5 {Light diffusing elements, e.g. plates or filters (optical diffusing elements per se G02B5/02)}
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H04N1/02895 4 {Additional elements in the illumination means or cooperating with the illumination means, e.g. filters (H04N1/02885 takes precedence; optical elements other than lenses per se G02B5/00)}
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H04N1/029 3 Heads optically focused on only one picture element at a time {(H04N1/0281 takes precedence)}
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H04N1/03 3 with photodetectors arranged in a substantially linear array
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H04N1/0301 4 {using a bent optical path between the scanned line and the photodetector array, e.g. a folded optical path}
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H04N1/0303 5 {with the scanned line and the photodetector array lying in non-parallel planes}
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H04N1/0305 5 {with multiple folds of the optical path}
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H04N1/0306 4 {using a plurality of optical elements arrayed in the main scan direction, e.g. an array of lenses}
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H04N1/0308 4 {characterised by the design of the photodetectors, e.g. shape}
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H04N1/031 4 the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
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H04N1/0311 5 {using an array of elements to project the scanned image elements onto the photodetectors (H04N1/0318 takes precedence)}
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H04N1/0312 6 {using an array of optical fibres or rod-lenses}
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H04N1/0313 5 {Direct contact pick-up heads, i.e. heads having no array of elements to project the scanned image elements onto the photodectors}
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H04N1/0314 5 {using photodetectors and illumination means mounted in the same plane on a common support or substrate}
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H04N1/0315 5 {using photodetectors and illumination means mounted on separate supports or substrates or mounted in different planes}
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H04N1/0316 6 {illuminating the scanned image elements through the plane of the photodetector, e.g. back-light illumination}
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H04N1/0317 6 {detecting the scanned image elements through the plane of the illumination means}
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H04N1/0318 5 {Integral pick-up heads, i.e. self-contained heads whose basic elements are a light-source, a lens array and a photodetector array which are supported by a single-piece frame}
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H04N1/032 2 for picture information reproduction
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H04N1/0323 3 {Heads moving to and away from the reproducing medium, e.g. for pressure sensitive reproducing}
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H04N1/0326 3 {Magnetic heads}
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H04N1/034 3 using ink, e.g. ink-jet heads {(H04N1/0323 takes precedence)}
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H04N1/036 3 for optical reproduction
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H04N1/04 1 Scanning arrangements {, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa}(H04N1/387 takes precedence)
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H04N1/0402 2 {Scanning different formats; Scanning with different densities of dots per unit length, e.g. different numbers of dots per inch (dpi); Conversion of scanning standards (H04N1/00283 takes precedence; picture signal circuits for modification of image resolution H04N1/3935, H04N1/40068)}
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H04N1/0405 3 {Different formats, e.g. A3 and A4}
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H04N1/0408 3 {Different densities of dots per unit length}
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H04N1/0411 4 {in the main scanning direction}
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H04N1/0414 4 {in the sub scanning direction}
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H04N1/0417 3 {Conversion of standards}
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H04N1/042 3 {Details of the method used}
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H04N1/0423 4 {Switching between or selecting from a plurality of optical paths}
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H04N1/0426 4 {using different sized scanning elements, e.g. reproducing different sized dots}
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H04N1/0429 4 {Varying the size of apertures}
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H04N1/0432 4 {Varying the magnification of a single lens group}
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H04N1/0435 4 {Optical element switching, e.g. switching lenses into a single optical path}
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H04N1/0437 4 {Tilting an array with respect to the main or sub scanning direction}
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H04N1/044 4 {Tilting an optical element, e.g. a refractive plate (H04N1/0423 takes precedence)}
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H04N1/0443 4 {Varying the scanning velocity or position}
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H04N1/0446 4 {Varying the modulation time or intensity}
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H04N1/0449 4 {using different sets of scanning elements, e.g. for different formats}
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H04N1/0452 5 {mounted on the same support or substrate}
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H04N1/0455 4 {using a single set of scanning elements, e.g. the whole of and a part of an array respectively for different formats}
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H04N1/0458 5 {using different portions of the scanning elements for different formats or densities of dots}
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H04N1/0461 2 {part of the apparatus being used in common for reading and reproducing (simultaneous scanning of the original picture and the reproduced picture with a common scanning device H04N1/207)}
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H04N1/0464 2 {capable of performing non-simultaneous scanning at more than one scanning station}
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H04N1/0467 3 {the different stations being used for transmissive and reflective originals}
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H04N1/047 2 Detection, control or error compensation of scanning velocity or position ({H04N1/0402 and } H04N1/17 take precedence)
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H04N1/0473 3 {in subscanning direction, e.g. picture start or line-to-line synchronisation}
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H04N1/0476 3 {Indicating the scanning velocity}
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H04N1/053 3 in main scanning direction, e.g. synchronisation of line start or picture elements in a line
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H04N1/06 2 using cylindrical picture-bearing surfaces {, i.e. scanning a main-scanning line substantially perpendicular to the axis and lying in a curved cylindrical surface}
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H04N1/0607 3 {Scanning a concave surface, e.g. with internal drum type scanners (H04N1/0657 takes precedence)}
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H04N1/0614 4 {with main-scanning by rotation of the picture-bearing surface}
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H04N1/0621 4 {using a picture-bearing surface stationary in the main-scanning direction}
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H04N1/0628 5 {using several scanning heads circumferentially spaced from one another and circumferentially aligned, e.g. mounted on a rotating disk}
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H04N1/0635 5 {using oscillating or rotating mirrors}
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H04N1/0642 5 {Scanners capable of scanning the total circumference of a closed cylinder}
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H04N1/065 5 {using rotating prisms}
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H04N1/0657 3 {Scanning a transparent surface, e.g. reading a transparency original}
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H04N1/0664 3 {with sub-scanning by translational movement of the picture-bearing surface}
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H04N1/0671 3 {with sub-scanning by translational movement of the main-scanning components}
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H04N1/0678 4 {using a lead-screw or worm}
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H04N1/0685 4 {using a belt or cable}
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H04N1/0692 3 {Details of the cylindrical surface (for mounting or holding the sheet H04N1/08)}
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H04N1/08 3 Mechanisms for mounting or holding the sheet around the drum
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H04N1/0804 4 {Holding methods}
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H04N1/0808 5 {Holding corners of the sheet}
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H04N1/0813 5 {Holding sides of the sheet which are substantially parallel to the drum axis}
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H04N1/0817 5 {Holding sides of the sheet which are substantially perpendicular to the drum axis}
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H04N1/0821 5 {Holding substantially the whole of the sheet, e.g. with a retaining sheet}
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H04N1/0826 5 {Holding or supporting the sheet in the vicinity of the scanning element}
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H04N1/083 4 {Holding means}
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H04N1/0834 5 {Flexible holding means, e.g. envelopes or sheaths}
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H04N1/0839 5 {Mechanical clamps, i.e. means for holding the sheet against the drum by mechanical force}
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H04N1/0843 5 {Pins or the like}
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H04N1/0847 5 {Magnetic means}
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H04N1/0852 5 {Adhesive means}
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H04N1/0856 5 {Suction or vacuum means}
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H04N1/086 6 {using grooves}
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H04N1/0865 5 {Single holding means holding both ends of a sheet}
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H04N1/0869 5 {capable of holding different sized sheets}
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H04N1/0873 5 {for holding the sheet on the internal surface of the drum}
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H04N1/0878 5 {for holding a sheet adjacent an aperture on an opaque drum}
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H04N1/0882 4 {Registering or guiding means other than the holding means}
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H04N1/0886 4 {Mounting the sheet from a roll}
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H04N1/0891 4 {Detecting failure of the holding, e.g. by detecting a loose sheet}
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H04N1/0895 4 {Means other than holding means for removing the sheet form the drum}
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H04N1/10 2 using flat picture-bearing surfaces {(H04N1/113, H04N1/195 take precedence)}
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H04N1/1004 3 {using two-dimensional electrical scanning, e.g. cathode-ray tubes (using two-dimensional arrays H04N1/195)}
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H04N1/1008 3 {with sub-scanning by translatory movement of the picture-bearing surface}
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H04N1/1013 3 {with sub-scanning by translatory movement of at least a part of the main-scanning components (H04N1/107 takes precedence)}
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H04N1/1017 4 {the main-scanning components remaining positionally invariant with respect to one another in the sub-scanning direction}
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H04N1/1021 4 {using a lead screw or worm}
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H04N1/1026 4 {using a belt or cable}
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H04N1/103 4 {by engaging a rail}
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H04N1/1035 4 {by other means, e.g. linear motor or hydraulic system}
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H04N1/1039 4 {Movement of the main scanning components}
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H04N1/1043 5 {of a sensor array}
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H04N1/1048 5 {of a lens or lens arrangement}
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H04N1/1052 5 {of a mirror}
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H04N1/1056 6 {of two or more separate mirror arrangements}
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H04N1/1061 3 {Details relating to flat picture-bearing surfaces, e.g. transparent platen}
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H04N1/1065 4 {Support or mounting of the flat picture-bearing surface}
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H04N1/107 3 with manual scanning
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H04N1/1071 4 {using a folded light path}
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H04N1/1072 4 {Means for guiding the scanning, e.g. rules (H04N1/1077 takes precedence)}
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H04N1/1074 4 {Apparatus incorporating a hardcopy reproducing device, e.g. a printer, not working directly by manual scanning}
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H04N1/1075 4 {Arrangements for facilitating holding of the scanner, e.g. shapes, grips}
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H04N1/1077 4 {Arrangements for facilitating movement over the scanned medium, e.g. disposition of rollers}
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H04N1/1078 4 {by moving the scanned medium}
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H04N1/113 2 using oscillating or rotating mirrors
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H04N1/1135 3 {for the main-scan only}
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H04N1/12 2 using the sheet-feed movement {or the medium-advance or the drum-rotation movement} as the slow scanning component, {e.g. arrangements for the main-scanning}({sheet-feed movement by translatory movement of a flat picture-bearing surface H04N1/1008; main-scanning using oscillating or rotating mirrors H04N1/113; } using multi-element arrays H04N1/19)
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H04N1/1205 3 {using a device, e.g. an optical fibre bundle, converting rectilinear scanning into circular line scanning or vice versa}
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H04N1/121 3 {Feeding arrangements (transporting sheets to or from the scanning position H04N1/0057; control or error compensation of sub-scanning velocity H04N1/0473)}
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H04N1/1215 4 {Feeding using one or more cylindrical platens or rollers in the immediate vicinity of the main scanning line}
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H04N1/122 4 {using a feed belt (feed belts for transporting to or from the scanning position H04N1/0061)}
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H04N1/1225 4 {Means for maintaining contact between the sheet and the image sensor, e.g. pressing means}
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H04N1/123 4 {Using a dedicated sheet guide element}
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H04N1/1235 4 {Feeding a sheet past a transparent plate; Details thereof}
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H04N1/124 5 {Plate shape}
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H04N1/1245 5 {Arrangements for mounting or holding the plate}
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H04N1/125 4 {the sheet feeding apparatus serving an auxiliary function, e.g. as a white reference}
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H04N1/1255 3 {Electronic copy boards}
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H04N1/126 3 {Arrangements for the main scanning}
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H04N1/1265 4 {using a holographic scanning element}
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H04N1/127 4 {using a cathode ray tube or the like}
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H04N1/1275 4 {using a solid-state deflector, e.g. an acousto-optic deflector or a semiconductor waveguide device}
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H04N1/128 4 {using a scanning head arranged for linear reciprocating motion}
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H04N1/1285 4 {using apertures arranged in a spiral}
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H04N1/129 4 {using an element rotating or oscillating about an axis not covered by any other group or code}
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H04N1/1295 4 {using an optical guide, e.g. a fibre-optic bundle between the scanned line and the scanning elements}
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H04N1/14 3 using a rotating endless belt carrying the scanning heads {or at least a part of the main scanning components}
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H04N1/16 3 using a rotating helical element
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H04N1/17 2 the scanning speed being dependent on content of picture
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H04N1/19 2 using multi-element arrays
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H04N1/1903 3 {Arrangements for enabling electronic abutment of lines or areas independently scanned by different elements of an array or by different arrays}
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H04N1/1906 3 {Arrangements for performing substitution scanning for a defective element}
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H04N1/191 3 the array comprising a one-dimensional array {, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements}
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H04N1/1911 4 {Simultaneously or substantially simultaneously scanning picture elements on more than one main scanning line, e.g. scanning in swaths}
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H04N1/1912 5 {Scanning main scanning lines which are spaced apart from one another in the sub-scanning direction}
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H04N1/1913 5 {Scanning adjacent picture elements in different scans of the array, e.g. in complementary checkerboard patterns}
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H04N1/1915 6 {with subscan displacement of the array between successive scans}
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H04N1/1916 5 {using an array of elements displaced from one another in the main scan direction, e.g. a diagonally arranged array}
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H04N1/1917 6 {Staggered element array, e.g. arrays with elements arranged in a zigzag}
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H04N1/1918 5 {Combination of arrays}
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H04N1/192 4 Simultaneously {or substantially simultaneously} scanning picture elements on one main scanning line
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H04N1/193 5 using electrically scanned linear arrays {, e.g. linear CCD arrays}
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H04N1/1931 6 {with scanning elements electrically interconnected in groups}
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H04N1/1932 6 {using an array of elements displaced from one another in the sub scan direction, e.g. a diagonally arranged array}
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H04N1/1933 7 {Staggered element arrays, e.g. arrays with elements arranged in a zigzag}
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H04N1/1934 6 {Combination of arrays}
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H04N1/1935 6 {Optical means for mapping the whole or part of a scanned line onto the array}
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H04N1/1936 7 {using a light guide, e.g. an optical fibre bundle or array}
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H04N1/1937 7 {using a reflecting element, e.g. a mirror or a prism}
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H04N1/1938 6 {Details of the electrical scanning}
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H04N1/195 3 the array comprising a two-dimensional array {or a combination of two-dimensional arrays}
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H04N1/19505 4 {Scanning picture elements spaced apart from one another in at least one direction}
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H04N1/1951 5 {in one direction}
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H04N1/19515 5 {in two directions}
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H04N1/19521 5 {Arrangements for moving the elements of the array relative to the scanned image or vice versa}
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H04N1/19526 6 {Optical means}
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H04N1/19531 7 {Reflecting elements}
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H04N1/19536 7 {Refracting elements}
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H04N1/19542 7 {Fibre bundles}
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H04N1/19547 7 {Apertures}
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H04N1/19552 7 {Rotation of optical elements}
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H04N1/19557 8 {about an axis parallel to the optical axis}
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H04N1/19563 8 {about an axis perpendicular to the optical axis}
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H04N1/19568 6 {Displacing the array}
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H04N1/19573 6 {Displacing the scanned image}
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H04N1/19578 6 {Hybrid systems, i.e. systems combining more than one arrangement for moving the elements of the array relative to the scanned image or vice versa}
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H04N1/19584 4 {Combination of arrays}
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H04N1/19589 4 {Optical means, e.g. an optical fibre bundle, for mapping the whole or a part of a scanned image onto the array}
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H04N1/19594 4 {using a television camera or a still video camera}
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H04N1/203 2 Simultaneous scanning of two or more separate pictures {, e.g. two sides of the same sheet (refeeding a sheet for double-sided scanning H04N1/00572)}
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H04N1/2032 3 {of two pictures corresponding to two sides of a single medium (refeeding a sheet for double-sided scanning H04N1/00572)}
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H04N1/2034 4 {at identical corresponding positions, i.e. without time delay between the two image signals}
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H04N1/2036 3 {of a plurality of pictures corresponding to a single side of a plurality of media}
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H04N1/2038 4 {lying in the same plane}
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H04N1/207 2 Simultaneous scanning of the original picture and the reproduced picture with a common scanning device
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H04N1/21 1 Intermediate information storage (H04N1/387, H04N1/41 take precedence {; for control between transmitter and receiver or between image input and image output device H04N1/32358; indexing, editing G11B27/00})
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H04N1/2104 2 {for one or a few pictures}
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H04N1/2108 3 {for one picture only}
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H04N1/2112 3 {using still video cameras}
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H04N1/2116 4 {Picture signal recording combined with imagewise recording, e.g. photographic recording (photographic cameras G03B19/00)}
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H04N1/212 4 {Motion video recording combined with still video recording (television signal recording H04N5/76)}
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H04N1/2125 4 {Display of information relating to the still picture recording}
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H04N1/2129 4 {Recording in, or reproducing from, a specific memory area or areas, or recording or reproducing at a specific moment}
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H04N1/2133 5 {Recording or reproducing at a specific moment, e.g. time interval or time-lapse}
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H04N1/2137 4 {with temporary storage before final recording, e.g. in a frame buffer}
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H04N1/2141 5 {in a multi-frame buffer}
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H04N1/2145 6 {of a sequence of images for selection of a single frame before final recording, e.g. from a continuous sequence captured before and after shutter-release}
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H04N1/215 4 {Recording a sequence of still pictures, e.g. burst mode}
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H04N1/2154 4 {the still video camera incorporating a hardcopy reproducing device, e.g. a printer}
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H04N1/2158 3 {using a detachable storage unit}
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H04N1/2162 3 {using a non electronic storage unit, e.g. by recording marks on a sheet}
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H04N1/2166 2 {for mass storage, e.g. in document filing systems (information retrieval G06F16/00)}
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H04N1/217 3 {Interfaces allowing access to a single user}
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H04N1/2175 4 {with local image input}
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H04N1/2179 3 {Interfaces allowing access to a plurality of users, e.g. connection to electronic image libraries}
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H04N1/2183 4 {the stored images being distributed among a plurality of different locations, e.g. among a plurality of users}
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H04N1/2187 4 {with image input from a plurality of different locations or from a non-central location, e.g. from one or more users}
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H04N1/2191 4 {for simultaneous, independent access by a plurality of different users}
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H04N1/2195 3 {with temporary storage before final recording or on play-back, e.g. in a frame buffer}
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H04N1/23 1 Reproducing arrangements
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H04N1/2307 2 {Circuits or arrangements for the control thereof, e.g. using a programmed control device, according to a measured quantity (H04N1/27, H04N1/29 take precedence)}
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H04N1/2315 3 {according to characteristics of the reproducing apparatus, e.g. capability}
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H04N1/2323 3 {according to characteristics of the reproducing medium, e.g. type, size or availability}
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H04N1/233 3 {according to characteristics of the data to be reproduced, e.g. number of lines}
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H04N1/2338 3 {according to user specified instructions, e.g. user selection of reproduction mode}
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H04N1/2346 3 {according to a detected condition or state of the reproducing device, e.g. temperature or ink quantity}
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H04N1/2353 3 {Selecting a particular reproducing medium from amongst a plurality of media or from a particular tray, e.g. paper or transparency}
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H04N1/2361 3 {Selecting a particular reproducing device from amongst a plurality of devices, e.g. high or low resolution devices}
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H04N1/2369 3 {Selecting a particular reproducing mode from amongst a plurality of modes, e.g. paper saving or normal, or simplex or duplex}
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H04N1/2376 3 {Inhibiting or interrupting a particular operation or device (preventing unauthorised reproduction H04N1/00838)}
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H04N1/2384 3 {for fitting data onto a particular reproducing medium without modifying the image data}
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H04N1/2392 3 {for displaying or indicating, e.g. a condition or state (details of displaying or indicating means H04N1/00405)}
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H04N1/27 2 involving production of a magnetic intermediate picture
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H04N1/29 2 involving production of an electrostatic intermediate picture
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H04N1/295 3 {Circuits or arrangements for the control thereof, e.g. using a programmed control device, according to a measured quantity}
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H04N1/31 2 Mechanical arrangements for picture transmission, e.g. adaptation of clutches, gearing, gear transmissions
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H04N1/32 1 Circuits or arrangements for control or supervision between transmitter and receiver {or between image input and image output device, e.g. between a still-image camera and its memory or between a still-image camera and a printer device (H04N1/38, H04N1/387 take precedence)}
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H04N1/32005 2 {Automation of particular receiver jobs, e.g. rejecting unwanted calls (requesting a communication from a transmitter H04N1/32771; with picture signal storage for forwarding messages H04N1/32358)}
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H04N1/3201 3 {Rejecting unwanted calls}
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H04N1/32016 3 {according to the caller's identification, e.g. fax number (H04N1/3201 takes precedence)}
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H04N1/32021 3 {according to the type of received information}
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H04N1/32026 3 {Changing the receiver mode of operation, e.g. paper reception to memory reception or vice versa (H04N1/32673 takes precedence)}
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H04N1/32032 3 {Polling of transmitters}
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H04N1/32037 2 {Automation of particular transmitter jobs, e.g. multi-address calling, auto-dialing}
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H04N1/32042 3 {with reading of job-marks on a page}
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H04N1/32048 3 {Auto-dialling or Auto-calling (H04N1/32053 - H04N1/32074 take precedence)}
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H04N1/32053 3 {Delayed transmission, e.g. to make use of reduced connection rates (H04N1/32074 takes precedence)}
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H04N1/32058 3 {Abbreviated dialing, e.g. one-touch dialing}
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H04N1/32064 3 {Multi-address calling}
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H04N1/32069 4 {simultaneously to a plurality of destinations, e.g. multi-casting}
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H04N1/32074 3 {Redialing, e.g. after failure to make a connection}
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H04N1/3208 3 {Transmitting a plurality of separate messages to a common destination in a single transmission}
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H04N1/32085 3 {Automation of other tasks, e.g. repetitive execution or sequencing}
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H04N1/3209 3 {according to the called number}
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H04N1/32096 3 {Checking the destination, e.g. correspondence of manual input with stored destination}
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H04N1/32101 2 {Display, printing, storage or transmission of additional information, e.g. ID code, date and time or title}
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H04N1/32106 3 {separate from the image data, e.g. in a different computer file}
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H04N1/32112 4 {in a separate computer file, document page or paper sheet, e.g. a fax cover sheet (H04N1/32122 takes precedence)}
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H04N1/32117 4 {in a separate transmission or protocol signal prior to or subsequent to the image data transmission, e.g. in digital identification signal [DIS], in non standard setup [NSS] or in non standard field [NSF] (for mode signalling H04N1/333)}
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H04N1/32122 4 {in a separate device, e.g. in a memory or on a display separate from image data}
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H04N1/32128 3 {attached to the image data, e.g. file header, transmitted message header, information on the same page or in the same computer file as the image (for information embedded in the image H04N1/32144)}
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H04N1/32133 4 {on the same paper sheet, e.g. a facsimile page header}
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H04N1/32138 5 {in an electronic device attached to the sheet, e.g. in an RFID tag}
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H04N1/32144 3 {embedded in the image data, i.e. enclosed or integrated in the image, e.g. watermark, super-imposed logo or stamp}
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H04N1/32149 4 {Methods relating to embedding, encoding, decoding, detection or retrieval operations}
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H04N1/32154 5 {Transform domain methods (H04N1/32309 takes precedence)}
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H04N1/3216 6 {using Fourier transforms}
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H04N1/32165 6 {using cosine transforms}
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H04N1/3217 6 {using wavelet transforms}
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H04N1/32176 6 {using Walsh, Hadamard or Walsh-Hadamard transforms}
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H04N1/32181 6 {using Karhunen-Loeve transforms}
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H04N1/32187 6 {with selective or adaptive application of the additional information, e.g. in selected frequency coefficients}
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H04N1/32192 7 {according to calculated or estimated visibility of the additional information in the image}
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H04N1/32197 7 {according to the spatial domain characteristics of the transform domain components}
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H04N1/32203 5 {Spatial or amplitude domain methods (H04N1/32309 takes precedence)}
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H04N1/32208 6 {involving changing the magnitude of selected pixels, e.g. overlay of information or super-imposition (H04N1/32219, H04N1/32224 take precedence)}
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H04N1/32213 7 {Modulating the least significant bits of pixels}
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H04N1/32219 6 {involving changing the position of selected pixels, e.g. word shifting, or involving modulating the size of image components, e.g. of characters (H04N1/32224 takes precedence)}
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H04N1/32224 6 {Replacing pixels of an image with other pixels from the same image, e.g. texture block coding}
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H04N1/32229 6 {with selective or adaptive application of the additional information, e.g. in selected regions of the image (H04N1/32213 takes precedence)}
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H04N1/32235 7 {in highly textured regions}
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H04N1/3224 7 {in edge regions}
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H04N1/32245 7 {Random or pseudorandom selection of pixels}
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H04N1/32251 6 {in multilevel data, e.g. greyscale or continuous tone data}
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H04N1/32256 6 {in halftone data}
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H04N1/32261 6 {in binary data (H04N1/32256 takes precedence)}
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H04N1/32267 5 {combined with processing of the image}
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H04N1/32272 6 {Encryption or ciphering}
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H04N1/32277 6 {Compression}
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H04N1/32283 6 {Hashing}
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H04N1/32288 5 {Multiple embedding, e.g. cocktail embedding, or redundant embedding, e.g. repeating the additional information at a plurality of locations in the image}
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H04N1/32293 6 {Repeating the additional information in a regular pattern}
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H04N1/32299 6 {using more than one embedding method}
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H04N1/32304 6 {Embedding different sets of additional information}
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H04N1/32309 5 {in colour image data}
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H04N1/32315 5 {Selecting a particular method from amongst a plurality of methods}
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H04N1/3232 5 {Robust embedding or watermarking}
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H04N1/32325 6 {the embedded data being visible}
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H04N1/32331 5 {Fragile embedding or watermarking}
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H04N1/32336 5 {Informed embedding, i.e. the original image being known for the encoding or decoding method}
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H04N1/32341 5 {Blind embedding, i.e. the original image not being known beforehand}
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H04N1/32347 5 {Reversible embedding, i.e. lossless, invertible, erasable, removable or distorsion-free embedding}
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H04N1/32352 4 {Controlling detectability or arrangements to facilitate detection or retrieval of the embedded information, e.g. using markers (for decoding, detection or retrieval operations H04N1/32149 and subgroups take precedence)}
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H04N1/32358 2 {using picture signal storage, e.g. at transmitter (H04N1/17 takes precedence)}
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H04N1/32363 3 {at the transmitter or at the receiver}
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H04N1/32368 4 {Functions of a still picture terminal memory associated with transmission}
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H04N1/32374 5 {Storage subsequent to an attempted transmission}
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H04N1/32379 4 {Functions of a still picture terminal memory associated with reception}
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H04N1/32384 5 {Storage subsequent to an attempted output at the receiver, e.g. in case of printer malfunction}
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H04N1/3239 5 {Forwarding image data, e.g. to an absent recipient}
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H04N1/32395 5 {Informing an absent addressee of receipt}
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H04N1/324 3 {intermediate the transmitter and receiver terminals, e.g. at an exchange}
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H04N1/32406 4 {in connection with routing or relaying, e.g. using a fax-server or a store-and-forward facility (stored and forward data switching systems H04L12/54)}
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H04N1/32411 5 {Handling instructions for routing or relaying}
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H04N1/32416 6 {Storage of instructions or retrieval of prestored instructions}
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H04N1/32422 6 {Reprocessing messages, e.g. in case the intended destination is busy}
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H04N1/32427 5 {Optimising routing, e.g. for minimum cost}
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H04N1/32432 4 {in a particular memory file for retrieval by the user, e.g. in a facsimile mailbox}
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H04N1/32438 5 {Informing the addressee of reception}
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H04N1/32443 3 {with asynchronous operation of the image input and output devices connected to the memory}
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H04N1/32448 4 {Controlling data flow to or from the memory in relation to the available memory capacity}
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H04N1/32454 4 {Controlling data flow to or from the memory in relation to the amount of data, e.g. file size}
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H04N1/32459 3 {for changing the arrangement of the stored data}
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H04N1/32464 4 {Changing the arrangement of pages or documents, e.g. for producing pages to be bound}
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H04N1/3247 4 {Changing the arrangement of data in a page, e.g. reversing the order to produce a mirror image}
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H04N1/32475 4 {Changing the format of the data, e.g. parallel to serial or vice versa}
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H04N1/3248 3 {Storage of at least a part of one of two image bearing sides of a single sheet, e.g. for two sided copying}
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H04N1/32486 3 {Storage for making a plurality of copies or reproductions}
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H04N1/32491 3 {alternate storage in and retrieval from two parallel memories, e.g. using ping-pong buffers}
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H04N1/32496 2 {Changing the task performed, e.g. reading and transmitting, receiving and reproducing, copying (facsimile mode changing H04N1/333)}
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H04N1/32502 2 {in systems having a plurality of input or output devices}
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H04N1/32507 3 {a plurality of input devices}
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H04N1/32512 4 {of different type, e.g. internal and external devices}
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H04N1/32518 5 {details of interfacing}
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H04N1/32523 3 {a plurality of output devices}
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H04N1/32529 4 {of different type, e.g. internal and external devices}
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H04N1/32534 5 {details of interfacing}
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H04N1/32539 4 {Detecting or indicating the status of the output devices}
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H04N1/32545 3 {Distributing a job or task among a plurality of input devices or a plurality of output devices}
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H04N1/3255 4 {Hybrid jobs, i.e. performing different parts of the same job on different devices, e.g. colour and B/W pages on different devices}
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H04N1/32555 4 {Large jobs, i.e. performing identical parts of the same job on different devices}
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H04N1/32561 2 {using a programmed control device, e.g. a microprocessor}
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H04N1/32566 3 {at the transmitter or at the receiver}
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H04N1/32571 3 {Details of system components}
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H04N1/32577 4 {Input interface}
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H04N1/32582 4 {Output interface}
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H04N1/32587 4 {Controller}
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H04N1/32593 3 {Using a plurality of controllers, e.g. for controlling different interfaces}
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H04N1/32598 3 {Bus based systems}
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H04N1/32603 4 {Multi-bus systems}
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H04N1/32609 2 {Fault detection or counter-measures, e.g. original mis-positioned, shortage of paper}
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H04N1/32614 3 {related to a single-mode communication, e.g. at the transmitter or at the receiver}
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H04N1/32619 4 {with retransmission (retransmission after changing the mode H04N1/3333)}
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H04N1/32625 3 {Fault detection}
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H04N1/3263 4 {of reading apparatus or transmitter, e.g. original jam}
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H04N1/32635 4 {of reproducing apparatus or receiver, e.g. out of paper}
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H04N1/32641 4 {of transmission or transmitted data, e.g. interruption or wrong number of pages}
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H04N1/32646 3 {Counter-measures (inhibiting an operation H04N1/00925, interrupting an operation H04N1/00915)}
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H04N1/32651 4 {Indicating or reporting (details of user-machine interface H04N1/0035)}
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H04N1/32657 5 {locally}
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H04N1/32662 5 {remotely, e.g. to the transmitter from the receiver}
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H04N1/32667 4 {Restarting a communication or performing a recovery operation}
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H04N1/32673 4 {Adjusting or controlling an operating mode, e.g. from paper reception to memory reception (H04N1/32678 takes precedence; inhibiting an operation H04N1/00925)}
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H04N1/32678 4 {Performing substitution, e.g. substitute reception or substituting a corrupted line of data (H04N1/32384 takes precedence)}
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H04N1/32683 4 {Preventive counter-measures, e.g. using redundant hardware, or anticipating a fault (arrangements for keeping a communication line open H04N1/32795)}
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H04N1/32689 5 {Involving the use of error correction codes}
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H04N1/32694 4 {Storing a fault condition in memory}
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H04N1/327 2 Initiating, continuing or ending a single-mode communication; Handshaking therefor {(H04N1/32614 takes precedence)}
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H04N1/32702 3 {using digital control signals (H04N1/32704, H04N1/32614, H04N1/32771 take precedence)}
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H04N1/32704 3 {Establishing a communication with one of a facsimile and another telecommunication apparatus sharing a single line}
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H04N1/32706 4 {Type of the other apparatus}
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H04N1/32708 5 {Telephone}
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H04N1/3271 5 {Telephone answering machine}
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H04N1/32713 5 {Data transmission device, e.g. switched network of teleprinters for the distribution of text-based information transceiver}
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H04N1/32715 4 {Detecting}
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H04N1/32717 5 {a calling tone, e.g. CI}
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H04N1/32719 5 {a facsimile calling signal, e.g. CNG}
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H04N1/32721 5 {facsimile protocol signals, e.g. DCS or TSI}
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H04N1/32723 5 {speech signals}
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H04N1/32726 5 {signals other than facsimile protocol signals, e.g. DTMF signals}
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H04N1/32728 5 {an off-hook condition}
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H04N1/3273 5 {a loop current}
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H04N1/32732 5 {within a predetermined time}
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H04N1/32734 5 {Maintaining the detecting operation after an apparatus has been connected to the line}
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H04N1/32736 5 {a state or mode of the facsimile apparatus (H04N1/32728 takes precedence)}
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H04N1/32739 4 {Generating signals}
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H04N1/32741 5 {Generating ringing or calling signals or tones}
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H04N1/32743 5 {Generating ring-back signals or tones}
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H04N1/32745 5 {Generating messages, indications or warnings locally}
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H04N1/32747 4 {Controlling the connection of the apparatus}
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H04N1/3275 5 {Giving priority to one of the apparatus}
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H04N1/32752 5 {Manual connection of one of the apparatus other than by putting a telephone off-hook}
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H04N1/32754 5 {Automatically connecting another apparatus when a first one has finished}
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H04N1/32756 5 {Inhibiting connection of another apparatus when a first one is connected}
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H04N1/32758 4 {Sending a voice message other than from a telephone answering machine}
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H04N1/3276 4 {Ring suppression}
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H04N1/32763 4 {Supplying power to the apparatus}
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H04N1/32765 3 {Initiating a communication}
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H04N1/32767 4 {in response to a user operation, e.g. actuating a switch (H04N1/32769 and H04N1/32771 take precedence)}
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H04N1/32769 4 {in response to detection of an original}
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H04N1/32771 4 {in response to a request, e.g. for a particular document}
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H04N1/32773 5 {to capture an image, e.g. at a location or event remote from the requester}
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H04N1/32776 5 {using an interactive, user-operated device, e.g. a computer terminal, mobile telephone (H04N1/32782, H04N1/32784 take precedence)}
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H04N1/32778 5 {using a mark-sheet or machine-readable code request}
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H04N1/3278 5 {using a protocol or handshaking signal, e.g. non-standard set-up [NSS]}
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H04N1/32782 5 {using a tone- or pulse-coded request}
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H04N1/32784 5 {using a voice request}
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H04N1/32786 3 {Ending a communication (H04N1/32614 takes precedence)}
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H04N1/32789 3 {Details of handshaking (H04N1/32793, H04N1/32795 and H04N1/32797 take precedence)}
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H04N1/32791 4 {Arrangements for reducing the handshaking procedure or protocol time}
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H04N1/32793 3 {Controlling a receiver or transmitter non-communication function in response to a communication control signal}
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H04N1/32795 3 {Arrangements for keeping the communication line open}
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H04N1/32797 3 {Systems adapted to communicate over more than one channel, e.g. via ISDN (changing transmission mode according to type of channel H04N2201/33364; multichannel or multilink communication protocols H04L69/14)}
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H04N1/333 2 Mode signalling or mode changing; Handshaking therefor
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H04N1/33307 3 {prior to start of transmission, input or output of the picture signal only}
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H04N1/33315 4 {reading or reproducing mode only, e.g. sheet size, resolution}
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H04N1/33323 4 {transmission mode only, e.g. speed}
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H04N1/3333 3 {during transmission, input or output of the picture signal; within a single document or page}
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H04N1/33338 3 {adapting to particular facsimile group, e.g. G3}
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H04N1/33346 3 {adapting to a particular standardised protocol}
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H04N1/33353 3 {according to the available bandwidth used for a single communication, e.g. the number of ISDN channels used}
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H04N1/33361 3 {according to characteristics or the state of the communication line (H04N1/33353 and H04N2201/33371 take precedence)}
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H04N1/33369 3 {Storage of mode or retrieval of prestored mode}
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H04N1/33376 3 {according to characteristics or state of one of the communicating parties, e.g. available memory capacity}
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H04N1/33384 4 {according to transient characteristics or state}
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H04N1/33392 3 {Details of handshaking}
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H04N1/34 2 for coin-freed systems {; Pay systems}
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H04N1/342 3 {Accounting or charging based on content, e.g. charging for access to a particular document}
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H04N1/344 3 {Accounting or charging based on type of function or service used, e.g. copying, faxing}
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H04N1/346 3 {Accounting or charging based on a number representative of the service used, e.g. number of operations or copies produced}
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H04N1/348 3 {Accounting or charging based on time or day}
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H04N1/36 2 for synchronising or phasing transmitter and receiver
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H04N1/38 1 Circuits or arrangements for blanking or otherwise eliminating unwanted parts of pictures (H04N1/387 takes precedence)
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H04N1/387 1 Composing, repositioning or otherwise {geometrically} modifying originals
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H04N1/3871 2 {the composed originals being of different kinds, e.g. low- and high-resolution originals}
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H04N1/3872 2 {Repositioning or masking}
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H04N1/3873 3 {defined only by a limited number of coordinate points or parameters, e.g. corners, centre; for trimming}
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H04N1/3875 4 {combined with enlarging or reducing (enlarging or reducing per se H04N1/393)}
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H04N1/3876 2 {Recombination of partial images to recreate the original image}
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H04N1/3877 2 {Image rotation}
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H04N1/3878 3 {Skew detection or correction}
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H04N1/393 2 Enlarging or reducing
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H04N1/3935 3 {with modification of image resolution, i.e. determining the values of picture elements at new relative positions}
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H04N1/40 1 Picture signal circuits (H04N1/387 takes precedence)
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H04N1/40006 2 {Compensating for the effects of ageing, i.e. changes over time}
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H04N1/40012 2 {Conversion of colour to monochrome}
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H04N1/40025 2 {Circuits exciting or modulating particular heads for reproducing continuous tone value scales (H04N1/401, H04N1/407 take precedence)}
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H04N1/40031 3 {for a plurality of reproducing elements simultaneously}
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H04N1/40037 3 {the reproducing element being a laser}
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H04N1/40043 3 {using more than one type of modulation, e.g. pulse width modulation and amplitude modulation}
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H04N1/4005 3 {with regulating circuits, e.g. dependent upon ambient temperature or feedback control}
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H04N1/40056 2 {Circuits for driving or energising particular reading heads or original illumination means (H04N1/401, H04N1/407 take precedence)}
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H04N1/40062 2 {Discrimination between different image types, e.g. two-tone, continuous tone}
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H04N1/40068 2 {Modification of image resolution, i.e. determining the values of picture elements at new relative positions (H04N1/3935 takes precedence)}
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H04N1/40075 2 {Descreening, i.e. converting a halftone signal into a corresponding continuous-tone signal; Rescreening, i.e. combined descreening and halftoning}
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H04N1/40081 2 {Soft dot halftoning, i.e. producing halftone dots with gradual edges}
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H04N1/40087 2 {Multi-toning, i.e. converting a continuous-tone signal for reproduction with more than two discrete brightnesses or optical densities, e.g. dots of grey and black inks on white paper}
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H04N1/40093 2 {Modification of content of picture, e.g. retouching (geometric modifications H04N1/387)}
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H04N1/401 2 Compensating positionally unequal response of the pick-up or reproducing head (H04N1/403 takes precedence)
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H04N1/4015 3 {of the reproducing head}
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H04N1/403 2 Discrimination between the two tones in the picture signal of a two-tone original
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H04N1/405 2 Halftoning, i.e. converting the picture signal of a continuous-tone original into a corresponding signal showing only two levels
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H04N1/4051 3 {producing a dispersed dots halftone pattern, the dots having substantially the same size (different sizes H04N1/4057)}
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H04N1/4052 4 {by error diffusion, i.e. transferring the binarising error to neighbouring dot decisions}
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H04N1/4053 5 {with threshold modulated relative to input image data or vice versa}
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H04N1/4055 3 {producing a clustered dots or a size modulated halftone pattern}
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H04N1/4056 4 {the pattern varying in one dimension only, e.g. dash length, pulse width modulation [PWM]}
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H04N1/4057 4 {the pattern being a mixture of differently sized sub-patterns, e.g. spots having only a few different diameters (multi-toning H04N1/40087)}
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H04N1/4058 4 {with details for producing a halftone screen at an oblique angle (H04N1/4056 takes precedence)}
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H04N1/407 2 Control or modification of tonal gradation or of extreme levels, e.g. background level
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H04N1/4072 3 {dependent on the contents of the original}
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H04N1/4074 4 {using histograms}
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H04N1/4076 3 {dependent on references outside the picture}
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H04N1/4078 4 {using gradational references, e.g. grey-scale test pattern analysis}
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H04N1/409 2 Edge or detail enhancement; Noise or error suppression
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H04N1/4092 3 {Edge or detail enhancement}
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H04N1/4095 3 {Correction of errors due to scanning a two-sided document, i.e. show-through correction}
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H04N1/4097 3 {Removing errors due external factors, e.g. dust, scratches}
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H04N1/41 1 Bandwidth or redundancy reduction (by scanning H04N1/17 {; methods or arrangements for coding, decoding, compressing or decompressing digital video signals H04N19/00})
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H04N1/4105 2 {for halftone screened pictures}
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H04N1/411 2 for the transmission {or storage} or reproduction of two-tone pictures, e.g. black and white pictures
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H04N1/4115 3 {involving the recognition of specific patterns, e.g. by symbol matching}
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H04N1/413 3 Systems or arrangements allowing the picture to be reproduced without loss or modification of picture-information
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H04N1/4135 4 {in which a baseband signal showing more than two values or a continuously varying baseband signal is transmitted or recorded}
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H04N1/415 4 in which the picture-elements are subdivided or grouped into fixed one-dimensional or two-dimensional blocks
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H04N1/417 4 using predictive or differential encoding
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H04N1/4172 5 {Progressive encoding, i.e. by decomposition into high and low resolution components}
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H04N1/4175 5 {involving the encoding of tone transitions with respect to tone transitions in a reference line}
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H04N1/4177 5 {encoding document change data, e.g. form drop out data}
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H04N1/419 4 in which encoding of the length of a succession of picture-elements of the same value along a scanning line is the only encoding step {(H04N1/4135 - H04N1/417 take precedence)}
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H04N1/42 1 Systems for two-way working {, e.g. conference systems (H04N1/32 takes precedence)}
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H04N1/44 1 Secrecy systems
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H04N1/4406 2 {Restricting access, e.g. according to user identity (mechanisms actuated y cards, PIN or the like in apparatus for dispensing G07F7/08)}
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H04N1/4413 3 {involving the use of passwords, ID codes or the like, e.g. PIN}
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H04N1/442 3 {using a biometric data reading device}
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H04N1/4426 3 {involving separate means, e.g. a server, a magnetic card}
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H04N1/4433 3 {to an apparatus, part of an apparatus or an apparatus function}
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H04N1/444 3 {to a particular document or image or part thereof}
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H04N1/4446 2 {Hiding of documents or document information}
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H04N1/4453 3 {Covering, i.e. concealing from above, or folding}
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H04N1/446 3 {Enclosing, i.e. retaining in an enclosure, or locking up}
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H04N1/4466 3 {Enveloping, wrapping, or sealing, i.e. keeping the document closed}
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H04N1/4473 3 {Destruction, e.g. shredding of documents}
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H04N1/448 2 {Rendering the image unintelligible, e.g. scrambling}
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H04N1/4486 3 {using digital data encryption}
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H04N1/4493 3 {Subsequently rendering the image intelligible using a co-operating image, mask or the like}
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H04N1/46 1 Colour picture communication systems
|
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H04N1/465 2 {Conversion of monochrome to colour}
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H04N1/48 2 Picture signal generators (for halftone screening H04N1/52)
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H04N1/482 3 {using the same detector device sequentially for different colour components}
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H04N1/484 4 {with sequential colour illumination of the original}
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H04N1/486 3 {with separate detectors, each detector being used for one specific colour component}
|
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H04N1/488 4 {using beam-splitters}
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H04N1/50 2 Picture reproducers (for halftone screening H04N1/52)
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H04N1/502 3 {Reproducing the colour component signals dot-sequentially or simultaneously in a single or in adjacent picture-element positions}
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H04N1/504 3 {Reproducing the colour component signals line-sequentially}
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H04N1/506 3 {Reproducing the colour component signals picture-sequentially, e.g. with reproducing heads spaced apart from one another in the subscanning direction}
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H04N1/508 4 {using the same reproducing head for two or more colour components}
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H04N1/52 2 Circuits or arrangements for halftone screening
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H04N1/54 2 Conversion of colour picture signals to a plurality of signals some of which represent particular mixed colours, e.g. for textile printing
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H04N1/56 2 Processing of colour picture signals (H04N1/52 takes precedence)
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H04N1/58 3 Edge or detail enhancement; Noise or error suppression, e.g. colour misregistration correction (H04N1/62 takes precedence)
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H04N1/60 3 Colour correction or control {(H04N1/54 takes precedence)}
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H04N1/6002 4 {Corrections within particular colour systems}
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H04N1/6005 5 {with luminance or chrominance signals, e.g. LC1C2, HSL or YUV}
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H04N1/6008 5 {with primary colour signals, e.g. RGB or CMY(K)}
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H04N1/6011 4 {with simulation on a subsidiary picture reproducer (H04N1/622 takes precedence; matching two or more picture reproducers H04N1/6052)}
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H04N1/6013 5 {by simulating several colour corrected versions of the same image simultaneously on the same picture reproducer}
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H04N1/6016 4 {Conversion to subtractive colour signals}
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H04N1/6019 5 {using look-up tables (H04N1/6025 takes precedence)}
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H04N1/6022 5 {Generating a fourth subtractive colour signal, e.g. under colour removal, black masking}
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H04N1/6025 6 {using look-up tables}
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H04N1/6027 4 {Correction or control of colour gradation or colour contrast (H04N1/6058 takes precedence)}
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H04N1/603 4 {controlled by characteristics of the picture signal generator or the picture reproducer}
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H04N1/6033 5 {using test pattern analysis (H04N1/6055 takes precedence)}
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H04N1/6036 6 {involving periodic tests or tests during use of the machine}
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H04N1/6038 6 {for controlling interaction among colorants}
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H04N1/6041 6 {for controlling uniformity of color across image area}
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H04N1/6044 6 {involving a sensor integrated in the machine or otherwise specifically adapted to read the test pattern}
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H04N1/6047 6 {wherein the test pattern is part of an arbitrary user image}
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H04N1/605 6 {for controlling ink amount, strike-through, bleeding soakage or the like}
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H04N1/6052 5 {Matching two or more picture signal generators or two or more picture reproducers}
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H04N1/6055 6 {using test pattern analysis}
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H04N1/6058 4 {Reduction of colour to a range of reproducible colours, e.g. to ink- reproducible colour gamut}
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H04N1/6061 5 {involving the consideration or construction of a gamut surface}
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H04N1/6063 5 {dependent on the contents of the image to be reproduced}
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H04N1/6066 6 {dependent on the gamut of the image to be reproduced}
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H04N1/6069 6 {spatially varying within the image}
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H04N1/6072 4 {adapting to different types of images, e.g. characters, graphs, black and white image portions}
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H04N1/6075 4 {Corrections to the hue}
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H04N1/6077 4 {Colour balance, e.g. colour cast correction}
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H04N1/608 5 {within the L, C1, C2 colour signals}
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H04N1/6083 4 {controlled by factors external to the apparatus}
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H04N1/6086 5 {by scene illuminant, i.e. conditions at the time of picture capture, e.g. flash, optical filter used, evening, cloud, daylight, artificial lighting, white point measurement, colour temperature}
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H04N1/6088 5 {by viewing conditions, i.e. conditions at picture output}
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H04N1/6091 5 {by environmental factors, e.g. temperature or humidity (H04N1/6086, H04N1/6088 take precedence)}
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H04N1/6094 4 {depending on characteristics of the input medium, e.g. film type, newspaper}
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H04N1/6097 4 {depending on the characteristics of the output medium, e.g. glossy paper, matt paper, transparency or fabrics}
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H04N1/62 4 Retouching, i.e. modification of isolated colours only or in isolated picture areas only
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H04N1/622 5 {with simulation on a subsidiary picture reproducer}
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H04N1/624 5 {Red-eye correction (control of camera based on recognised facial parts H04N23/611)}
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H04N1/626 5 {Detection of non-electronic marks, e.g. fluorescent markers}
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H04N1/628 5 {Memory colours, e.g. skin or sky}
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H04N1/64 2 Systems for the transmission or the storage of the colour picture signal; Details therefor, e.g. coding or decoding means therefor {(H04N19/00 takes precedence)}
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H04N1/642 3 {Adapting to different types of images, e.g. characters, graphs, black and white image portions}
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H04N1/644 3 {using a reduced set of representative colours, e.g. each representing a particular range in a colour space}
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H04N1/646 3 {Transmitting or storing colour television type signals, e.g. PAL, Lab; Their conversion into additive or subtractive colour signals or vice versa therefor (H04N1/642, H04N1/644 take precedence)}
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H04N1/648 3 {Transmitting or storing the primary (additive or subtractive) colour signals; Compression thereof (H04N1/642 - H04N1/646 take precedence)}
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H04N3/00 0 Scanning details of television systems; Combination thereof with generation of supply voltages
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H04N3/02 1 by optical-mechanical means only (H04N3/36 takes precedence)
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H04N3/04 2 having a moving aperture {also apertures covered by lenses}
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H04N3/06 2 having a moving lens or other refractor
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H04N3/08 2 having a moving reflector
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H04N3/09 3 for electromagnetic radiation in the invisible region, e.g. infra-red
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H04N3/10 1 by means not exclusively optical-mechanical (H04N3/36 takes precedence)
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H04N3/12 2 by switched stationary formation of lamps, photocells or light relays
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H04N3/122 3 {using cathode rays, e.g. multivision}
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H04N3/125 3 {using gas discharges, e.g. plasma}
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H04N3/127 3 {using liquid crystals}
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H04N3/14 2 by means of electrically scanned solid-state devices (for picture generation H04N25/00)
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H04N3/15 3 {for picture signal generation}
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H04N3/1506 4 {with addressing of the image-sensor elements (H04N3/1575 takes precedence)}
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H04N3/1512 5 {for MOS image-sensors, e.g. MOS-CCD (H04N3/1581 takes precedence)}
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H04N3/1518 5 {using charge injection within the image-sensor}
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H04N3/1525 4 {with charge transfer within the image-sensor, e.g. time delay and integration (H04N3/1575 takes precedence)}
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H04N3/1531 5 {using frame-interline transfer}
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H04N3/1537 5 {using interline transfer}
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H04N3/1543 5 {using frame transfer}
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H04N3/155 4 {Control of the image-sensor operation, e.g. image processing within the image-sensor}
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H04N3/1556 5 {for variable integration time}
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H04N3/1562 5 {for selective scanning, e.g. windowing, zooming}
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H04N3/1568 5 {for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing (correction circuits H04N25/62)}
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H04N3/1575 4 {Picture signal readout register, e.g. shift registers, interline shift registers}
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H04N3/1581 4 {using linear image-sensor (time delay and integration H04N3/1525)}
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H04N3/1587 4 {the image being sequentially picked-up by one device at different imaging positions, e.g. by shifting the image-sensor}
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H04N3/1593 4 {the image being simultaneously picked-up by more than one device, e.g. the scene being partitioned into subimages}
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H04N3/16 2 by deflecting electron beam in cathode-ray tube {, e.g. scanning corrections}
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H04N3/18 3 Generation of supply voltages, in combination with electron beam deflecting
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H04N3/185 4 Maintaining dc voltage constant
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H04N3/1853 5 {using regulation in parallel}
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H04N3/1856 5 {using regulation in series}
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H04N3/19 4 Arrangements or assemblies in supply circuits for the purpose of withstanding high voltages
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H04N3/20 3 Prevention of damage to cathode-ray tubes in the event of failure of scanning
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H04N3/22 3 Circuits for controlling dimensions, shape or centering of picture on screen
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H04N3/223 4 Controlling dimensions (by maintaining the cathode-ray tube high voltage constant H04N3/185)
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H04N3/227 4 Centering
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H04N3/23 4 Distortion correction, e.g. for pincushion distortion correction, S-correction
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H04N3/233 5 using active elements
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H04N3/2335 6 {with calculating means}
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H04N3/237 5 using passive elements, e.g. diodes
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H04N3/24 3 Blanking circuits
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H04N3/26 3 Modifications of scanning arrangements to improve focusing
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H04N3/27 3 Circuits special to multi-standard receivers
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H04N3/28 2 producing multiple scanning, i.e. using more than one spot at the same time
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H04N3/30 2 otherwise than with constant velocity or otherwise than in pattern formed by unidirectional, straight, substantially horizontal or vertical lines
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H04N3/32 3 Velocity varied in dependence upon picture information
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H04N3/34 3 Elemental scanning area oscillated rapidly in direction transverse to main scanning direction
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H04N3/36 1 Scanning of motion picture films, e.g. for telecine
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H04N3/38 2 with continuously moving film
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H04N3/40 2 with intermittently moving film
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H04N3/405 3 {with film moving only during the field blanking interval}
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H04N5/00 0 Details of television systems (scanning details or combination thereof with generation of supply voltages H04N3/00)
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H04N5/04 1 Synchronising (for television systems using pulse code modulation H04N7/56)
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H04N5/05 2 Synchronising circuits with arrangements for extending range of synchronisation, e.g. by using switching between several time constants
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H04N5/06 2 Generation of synchronising signals
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H04N5/067 3 Arrangements or circuits at the transmitter end
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H04N5/0675 4 {for mixing the synchronising signals with the picture signal or mutually (electrical gates H03K17/00)}
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H04N5/073 4 for mutually locking plural sources of synchronising signals, e.g. studios or relay stations
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H04N5/0733 5 {for distributing synchronisation pulses to different TV cameras}
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H04N5/0736 5 {using digital storage buffer techniques}
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H04N5/08 2 Separation of synchronising signals from picture signals
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H04N5/10 3 Separation of line synchronising signal from frame synchronising signal {or vice versa}
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H04N5/12 2 Devices in which the synchronising signals are only operative if a phase difference occurs between synchronising and synchronised scanning devices, e.g. flywheel synchronising
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H04N5/123 3 {whereby the synchronisation signal directly commands a frequency generator}
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H04N5/126 3 {whereby the synchronisation signal indirectly commands a frequency generator}
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H04N5/14 1 Picture signal circuitry for video frequency region (cameras or camera modules comprising electronic image sensors, or control thereof H04N23/00)
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H04N5/141 2 {Beam current control means}
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H04N5/142 2 {Edging; Contouring}
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H04N5/144 2 {Movement detection (for video coding H04N19/503; analysis of motion in general G06T7/20)}
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H04N5/145 3 {Movement estimation (for video coding H04N19/51)}
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H04N5/147 2 {Scene change detection}
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H04N5/148 2 {Video amplifiers (amplifiers in general H03F)}
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H04N5/16 2 Circuitry for reinsertion of dc and slowly varying components of signal; Circuitry for preservation of black or white level
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H04N5/165 3 {to maintain the black level constant}
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H04N5/18 3 by means of "clamp" circuit operated by switching circuit
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H04N5/185 4 {for the black level}
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H04N5/20 2 Circuitry for controlling amplitude response
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H04N5/202 3 Gamma control (circuits for controlling camera response irrespective of the scene brightness H04N23/82)
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H04N5/205 3 for correcting amplitude versus frequency characteristic
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H04N5/208 4 for compensating for attenuation of high frequency components, e.g. crispening, aperture distortion correction
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H04N5/21 2 Circuitry for suppressing or minimising disturbance, e.g. moiré or halo
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H04N5/211 3 {Ghost signal cancellation (H04N23/81 takes precedence)}
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H04N5/213 3 Circuitry for suppressing or minimising impulsive noise (for suppressing or minimising disturbance in image signal generation H04N23/81)
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H04N5/222 1 Studio circuitry; Studio devices; Studio equipment (cameras or camera modules comprising electronic image sensors, or control thereof H04N23/00)
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H04N5/2222 2 {Prompting}
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H04N5/2224 2 {related to virtual studio applications}
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H04N5/2226 3 {Determination of depth image, e.g. for foreground/background separation (determining depth by image analysis in general G06T7/50; segmentation by image analysis in general G06T7/10)}
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H04N5/2228 2 {Video assist systems used in motion picture production, e.g. video cameras connected to viewfinders of motion picture cameras or related video signal processing}
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H04N5/253 2 Picture signal generating by scanning motion picture films or slide opaques, e.g. for telecine (scanning details therefor H04N3/36 {; standard conversion therefor H04N7/0112})
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H04N5/257 2 Picture signal generators using flying-spot scanners (H04N5/253 takes precedence)
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H04N5/262 2 Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects {; Cameras specially adapted for the electronic generation of special effects}
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H04N5/2621 3 {Cameras specially adapted for the electronic generation of special effects during image pickup, e.g. digital cameras, camcorders, video cameras having integrated special effects capability}
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H04N5/2622 3 {Signal amplitude transition in the zone between image portions, e.g. soft edges}
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H04N5/2624 3 {for obtaining an image which is composed of whole input images, e.g. splitscreen}
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H04N5/2625 3 {for obtaining an image which is composed of images from a temporal image sequence, e.g. for a stroboscopic effect (sequence generated by event triggered capturing H04N7/188)}
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H04N5/2627 4 {for providing spin image effect, 3D stop motion effect or temporal freeze effect (2D image animation in general G06T13/80)}
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H04N5/2628 3 {Alteration of picture size, shape, position or orientation, e.g. zooming, rotation, rolling, perspective, translation}
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H04N5/265 3 Mixing
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H04N5/268 3 Signal distribution or switching
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H04N5/272 3 Means for inserting a foreground image in a background image, i.e. inlay, outlay
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H04N5/2723 4 {Insertion of virtual advertisement; Replacing advertisements physical present in the scene by virtual advertisement (data processing systems or methods specially adapted for marketing G06Q30/02)}
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H04N2005/2726 4 {for simulating a person's appearance, e.g. hair style, glasses, clothes}
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H04N5/275 4 Generation of keying signals
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H04N5/278 3 Subtitling
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H04N5/28 2 Mobile studios
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H04N5/30 1 Transforming light or analogous information into electric information (scanning details H04N3/00; cameras or camera modules comprising electronic image sensors, or control thereof H04N23/00; circuitry of solid-state image sensors [SSIS] or control thereof H04N25/00)
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H04N5/32 2 Transforming X-rays (cameras or camera modules for generating image signals from X-rays H04N23/30; circuitry of SSIS for transforming X-rays into image signals H04N25/30)
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H04N5/3205 3 {using subtraction imaging techniques}
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H04N5/321 3 with video transmission of fluoroscopic images
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H04N5/325 4 Image enhancement, e.g. by subtraction techniques using polyenergetic X-rays
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H04N5/33 2 Transforming infrared radiation (cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20)
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H04N5/38 1 Transmitter circuitry {for the transmission of television signals according to analogue transmission standards} (H04N5/14 takes precedence)
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H04N5/40 2 Modulation circuits
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H04N5/42 2 for transmitting at will black-and-white or colour signals
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H04N5/44 1 Receiver circuitry {for the reception of television signals according to analogue transmission standards} (H04N5/14 takes precedence)
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H04N5/4446 2 {IF amplifier circuits specially adapted for B&W TV (RF amplifiers in general H03F3/189)}
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H04N5/4448 2 {for frame-grabbing}
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H04N5/445 2 for displaying additional information (H04N5/50 takes precedence)
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H04N5/44504 3 {Circuit details of the additional information generator, e.g. details of the character or graphics signal generator, overlay mixing circuits}
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H04N5/45 3 Picture in picture {, e.g. displaying simultaneously another television channel in a region of the screen}
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H04N5/455 2 Demodulation-circuits
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H04N5/46 2 for receiving on more than one standard at will (deflecting circuits of multi-standard receivers H04N3/27)
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H04N5/50 2 Tuning indicators; Automatic tuning control
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H04N5/505 3 {Invisible or silent tuning}
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H04N5/52 2 Automatic gain control
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H04N5/53 3 Keyed automatic gain control
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H04N5/54 3 for positively-modulated picture signals (H04N5/53 takes precedence)
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H04N5/56 3 for negatively-modulated picture signals (H04N5/53 takes precedence)
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H04N5/57 2 Control of contrast or brightness
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H04N5/58 3 in dependence upon ambient light
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H04N5/59 3 in dependence upon beam current of cathode ray tube
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H04N5/60 2 for the sound signals
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H04N5/602 3 {for digital sound signals}
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H04N5/605 4 {according to the NICAM system}
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H04N5/607 3 {for more than one sound signal, e.g. stereo, multilanguages (H04N5/602 takes precedence)}
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H04N5/62 3 Intercarrier circuits, i.e. heterodyning sound and vision carriers {(H04N5/607 takes precedence)}
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H04N5/63 1 Generation or supply of power specially adapted for television receivers
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H04N5/64 1 Constructional details of receivers, e.g. cabinets or dust covers (furniture aspects {of television cabinets} A47B81/06)
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H04N5/642 2 {Disposition of sound reproducers}
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H04N5/645 2 Mounting of picture tube on chassis or in housing
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H04N5/65 2 Holding-devices for protective discs or for picture masks
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H04N5/655 2 Construction or mounting of chassis, e.g. for varying the elevation of the tube
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H04N5/66 1 Transforming electric information into light information (scanning details H04N3/00)
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H04N5/68 2 Circuit details for cathode-ray display tubes {(deviation circuits H04N3/16)}
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H04N5/70 2 Circuit details for electroluminescent devices
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H04N5/72 1 Modifying the appearance of television pictures by optical filters or diffusing screens
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H04N5/74 1 Projection arrangements for image reproduction, e.g. using eidophor
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H04N5/7408 2 {Direct viewing projectors, e.g. an image displayed on a video CRT or LCD display being projected on a screen}
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H04N5/7416 2 {involving the use of a spatial light modulator, e.g. a light valve, controlled by a video signal}
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H04N5/7425 3 {the modulator being a dielectric deformable layer controlled by an electron beam, e.g. eidophor projector}
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H04N2005/7433 4 {Control circuits therefor}
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H04N5/7441 3 {the modulator being an array of liquid crystal cells}
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H04N2005/745 4 {Control circuits therefor}
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H04N5/7458 3 {the modulator being an array of deformable mirrors, e.g. digital micromirror device [DMD]}
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H04N2005/7466 4 {Control circuits therefor}
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H04N5/7475 2 {Constructional details of television projection apparatus}
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H04N2005/7483 3 {for colour television}
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H04N5/7491 3 {of head mounted projectors}
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H04N5/76 1 Television signal recording
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H04N5/7605 2 {on discs or drums (H04N5/781, H04N5/805, H04N5/83, H04N5/85 take precedence)}
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H04N5/765 2 Interface circuits between an apparatus for recording and another apparatus
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H04N5/77 3 between a recording apparatus and a television camera
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H04N5/772 4 {the recording apparatus and the television camera being placed in the same enclosure}
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H04N5/775 3 between a recording apparatus and a television receiver
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H04N5/7755 4 {the recorder being connected to, or coupled with, the antenna of the television receiver}
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H04N5/78 2 using magnetic recording (H04N5/91 takes precedence {; mechanical details in so far as non typical for television circuitry G11B5/00})
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H04N5/7805 3 {Recording or playback not using inductive heads, e.g. magneto-optical, thermomagnetic, magnetostrictive, galvanomagnetic (electrostatic recording H04N5/80, photographic recording H04N5/84)}
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H04N5/781 3 on disks or drums
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H04N5/782 3 on tape
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H04N5/78206 4 {Recording using a special track configuration, e.g. crossing, overlapping}
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H04N5/78213 4 {involving recording in different depths of the magnetic tape}
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H04N5/7822 4 with stationary magnetic heads
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H04N5/7824 4 with rotating magnetic heads
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H04N5/7826 5 involving helical scanning of the magnetic tape
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H04N5/78263 6 {for recording on tracks inclined relative to the direction of movement of the tape}
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H04N5/78266 7 {using more than one track for the recording of one television field or frame, i.e. segmented recording}
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H04N5/7828 5 involving transversal scanning of the magnetic tape
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H04N5/783 4 Adaptations for reproducing at a rate different from the recording rate
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H04N5/784 3 on a sheet
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H04N5/80 2 using electrostatic recording (H04N5/91 takes precedence)
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H04N5/805 3 {on discs or drums}
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H04N5/82 3 using deformable thermoplastic recording medium
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H04N5/83 4 on disks or drums
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H04N5/84 2 using optical recording (H04N5/80, H04N5/89, H04N5/91 take precedence)
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H04N5/843 3 {on film}
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H04N5/846 4 {the film moving intermittently}
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H04N5/85 3 on discs or drums
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H04N5/87 3 Producing a motion picture film from a television signal {(standard conversion therefor H04N7/0112)}
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H04N5/89 2 using holographic recording (H04N5/91 takes precedence)
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H04N5/90 3 on discs or drums
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H04N5/903 2 using variable electrical capacitive recording (H04N5/91 takes precedence)
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H04N5/907 2 using static stores, e.g. storage tubes or semiconductor memories (H04N5/91 takes precedence)
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H04N5/91 2 Television signal processing therefor
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H04N5/911 3 for the suppression of noise {(H04N5/932 takes precedence)}
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H04N5/913 3 for scrambling {; for copy protection}
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H04N2005/91307 4 {by adding a copy protection signal to the video signal}
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H04N2005/91314 5 {the copy protection signal being a pulse signal inserted in blanking intervals of the video signal, e.g. pseudo-AGC pulses, pseudo-sync pulses}
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H04N2005/91321 5 {the copy protection signal being a copy protection control signal, e.g. a record inhibit signal}
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H04N2005/91328 5 {the copy protection signal being a copy management signal, e.g. a copy generation management signal [CGMS]}
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H04N2005/91335 5 {the copy protection signal being a watermark}
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H04N2005/91342 5 {the copy protection signal being an authentication signal}
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H04N2005/9135 5 {by superimposing the spectrally spread copy protection signal onto the video signal}
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H04N2005/91357 4 {by modifying the video signal}
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H04N2005/91364 5 {the video signal being scrambled}
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H04N2005/91371 5 {the video color burst signal being modified}
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H04N2005/91378 5 {the video line number being modulated}
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H04N2005/91385 5 {the video frame number being modulated}
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H04N2005/91392 4 {using means for preventing making copies of projected video images}
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H04N5/915 3 for field- or frame-skip recording or reproducing
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H04N5/9155 4 {with sound multiplexing}
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H04N5/917 3 for bandwidth reduction
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H04N5/919 4 by dividing samples or signal segments, e.g. television lines, among a plurality of recording channels
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H04N5/92 3 Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback
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H04N5/9201 4 {involving the multiplexing of an additional signal and the video signal}
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H04N5/9202 5 {the additional signal being a sound signal (H04N5/9155, H04N5/92 take precedence)}
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H04N5/9203 6 {using time division multiplex}
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H04N5/9204 6 {using frequency division multiplex}
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H04N5/9205 5 {the additional signal being at least another television signal}
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H04N5/9206 5 {the additional signal being a character code signal}
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H04N5/9207 6 {for teletext}
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H04N5/9208 6 {involving the use of subcodes}
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H04N5/921 4 by recording or reproducing the baseband signal
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H04N5/923 4 using preemphasis of the signal before modulation and deemphasis of the signal after demodulation {(volume compression or expansion in amplifiers in general H03G7/00)}
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H04N5/926 4 by pulse code modulation (H04N5/919 takes precedence)
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H04N5/9261 5 {involving data reduction}
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H04N5/9262 6 {using predictive coding}
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H04N5/9264 6 {using transform coding}
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H04N5/9265 5 {with processing of the sound signal}
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H04N5/9267 6 {using time division multiplex of the PCM audio and PCM video signals}
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H04N5/9268 7 {with insertion of the PCM audio signals in the vertical blanking interval of the PCM video signal}
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H04N5/928 4 the sound signal being pulse code modulated and recorded in time division multiplex with the modulated video signal
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H04N5/93 3 Regeneration of the television signal or of selected parts thereof
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H04N5/9305 4 {involving the mixing of the reproduced video signal with a non-recorded signal, e.g. a text signal}
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H04N5/931 4 for restoring the level of the reproduced signal
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H04N5/9315 5 {the level control being frequency dependent (H04N5/923 takes precedence)}
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H04N5/932 4 Regeneration of analogue synchronisation signals
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H04N5/935 4 Regeneration of digital synchronisation signals
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H04N5/937 4 by assembling picture element blocks in an intermediate store
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H04N5/94 4 Signal drop-out compensation
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H04N5/945 5 for signals recorded by pulse code modulation
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H04N5/95 4 Time-base error compensation {(H04N5/932 takes precedence)}
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H04N5/953 5 by using an analogue memory, e.g. a CCD shift register, the delay of which is controlled by a voltage controlled oscillator
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H04N5/956 5 by using a digital memory with independent write-in and read-out clock generators
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H04N7/00 0 Television systems (details H04N3/00, H04N5/00; methods or arrangements, for coding, decoding, compressing or decompressing digital video signals H04N19/00; selective content distribution H04N21/00)
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H04N7/002 1 {Special television systems not provided for by H04N7/007 - H04N7/18 (still pictures via a television channel H04N1/00098)}
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H04N7/005 2 {using at least one opto-electrical conversion device}
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H04N7/007 1 {Systems with supplementary picture signal insertion during a portion of the active part of a television signal, e.g. during top and bottom lines in a HDTV letter-box system}
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H04N7/01 1 Conversion of standards {, e.g. involving analogue television standards or digital television standards processed at pixel level}
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H04N7/0102 2 {involving the resampling of the incoming video signal}
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H04N7/0105 2 {using a storage device with different write and read speed}
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H04N7/0107 3 {using beam gun storage}
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H04N7/011 3 {using magnetic recording}
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H04N7/0112 2 {one of the standards corresponding to a cinematograph film standard}
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H04N7/0115 3 {with details on the detection of a particular field or frame pattern in the incoming video signal, e.g. 3:2 pull-down pattern}
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H04N7/0117 2 {involving conversion of the spatial resolution of the incoming video signal (for graphics images G09G2340/0407)}
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H04N7/012 3 {Conversion between an interlaced and a progressive signal (for graphics images G09G2310/0229)}
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H04N7/0122 3 {the input and the output signals having different aspect ratios}
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H04N7/0125 2 {one of the standards being a high definition standard}
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H04N7/0127 2 {by changing the field or frame frequency of the incoming video signal, e.g. frame rate converter}
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H04N7/013 3 {the incoming video signal comprising different parts having originally different frame rate, e.g. video and graphics}
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H04N7/0132 3 {the field or frame frequency of the incoming video signal being multiplied by a positive integer, e.g. for flicker reduction}
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H04N7/0135 2 {involving interpolation processes (interpolation-based image scaling G06T3/4007; interpolation for video coding H04N19/587, H04N19/59)}
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H04N7/0137 3 {dependent on presence/absence of motion, e.g. of motion zones (H04N7/014 takes precedence; movement detection in television signals H04N5/144)}
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H04N7/014 3 {involving the use of motion vectors (motion estimation and compensation in video coding H04N19/51)}
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H04N7/0142 3 {the interpolation being edge adaptive (edge detection in television signals H04N5/142; edge-driven scaling G06T3/403)}
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H04N7/0145 3 {the interpolation being class adaptive, i.e. it uses the information of class which is determined for a pixel based upon certain characteristics of the neighbouring pixels}
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H04N7/0147 3 {the interpolation using an indication of film mode or an indication of a specific pattern, e.g. 3:2 pull-down pattern}
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H04N7/015 1 High-definition television systems
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H04N7/0152 2 {using spatial or temporal subsampling}
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H04N7/0155 3 {using pixel blocks}
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H04N7/0157 4 {with motion estimation, e.g. involving the use of motion vectors}
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H04N7/025 1 Systems for the transmission of digital non-picture data, e.g. of text during the active part of a television frame {(transmission of digital non-picture data during the vertical blanking interval only H04N7/088)}
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H04N7/0255 2 {Display systems therefor}
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H04N7/03 2 Subscription systems therefor
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H04N7/035 2 Circuits for the digital non-picture data signal, e.g. for slicing of the data signal, for regeneration of the data-clock signal, for error detection or correction of the data signal
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H04N7/0352 3 {for regeneration of the clock signal}
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H04N7/0355 3 {for discrimination of the binary level of the digital data, e.g. amplitude slicers}
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H04N7/0357 3 {for error detection or correction}
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H04N7/04 1 Systems for the transmission of one television signal, i.e. both picture and sound, by a single carrier {(H04N7/084, H04N7/087 take precedence)}
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H04N7/045 2 the carrier being frequency modulated
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H04N7/06 1 Systems for the simultaneous transmission of one television signal, i.e. both picture and sound, by more than one carrier {(H04N7/084, H04N7/087 take precedence)}
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H04N7/063 2 {Simultaneous transmission of separate parts of one picture}
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H04N7/066 2 {the carriers being allocated to more than one television channel}
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H04N7/08 1 Systems for the simultaneous or sequential transmission of more than one television signal, e.g. additional information signals, the signals occupying wholly or partially the same frequency band {, e.g. by time division (H04N7/007 takes precedence)}
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H04N7/0803 2 {using frequency interleaving, e.g. with precision offset}
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H04N7/0806 2 {the signals being two or more video signals (H04N7/0803, H04N7/081 take precedence)}
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H04N7/081 2 the additional information signals being transmitted by means of a subcarrier
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H04N7/083 2 with signal insertion during the vertical and the horizontal blanking interval {, e.g. MAC data signals}
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H04N7/084 2 with signal insertion during the horizontal blanking interval {only}
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H04N7/085 3 the inserted signal being digital
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H04N7/0855 4 {the signal being time-compressed before its insertion and subsequently decompressed at reception}
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H04N7/087 2 with signal insertion during the vertical blanking interval {only}
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H04N7/088 3 the inserted signal being digital
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H04N7/0881 4 {the signal being time-compressed before its insertion and subsequently decompressed at reception}
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H04N7/0882 4 {for the transmission of character code signals, e.g. for teletext (circuits for the digital non-picture data signal H04N7/035)}
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H04N7/0884 4 {for the transmission of additional display-information, e.g. menu for programme or channel selection}
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H04N7/0885 5 {for the transmission of subtitles}
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H04N7/0887 4 {for the transmission of programme or channel identifying signals}
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H04N7/0888 4 {Subscription systems therefor}
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H04N7/10 1 Adaptations for transmission by electrical cable (H04N7/12 takes precedence)
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H04N7/102 2 {Circuits therefor, e.g. noise reducers, equalisers, amplifiers (H04N7/108 takes precedence)}
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H04N7/104 3 {Switchers or splitters}
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H04N7/106 2 {for domestic distribution}
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H04N7/108 2 {the cable being constituted by a pair of wires}
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H04N7/12 1 Systems in which the television signal is transmitted via one channel or a plurality of parallel channels, the bandwidth of each channel being less than the bandwidth of the television signal (H04N7/24 takes precedence)
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H04N7/122 2 {involving expansion and subsequent compression of a signal segment, e.g. a frame, a line}
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H04N7/125 3 {the signal segment being a picture element}
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H04N7/127 2 {Systems in which different parts of the picture signal frequency band are individually processed, e.g. suppressed, transposed}
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H04N7/14 1 Systems for two-way working ({H04N7/12, } H04N7/173 take precedence)
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H04N7/141 2 {between two video terminals, e.g. videophone (telephonic communication systems combined with television receiver for reception of entertainment or information matter H04M11/085)}
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H04N7/142 3 {Constructional details of the terminal equipment, e.g. arrangements of the camera and the display}
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H04N7/144 4 {camera and display on the same optical axis, e.g. optically multiplexing the camera and display for eye to eye contact}
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H04N2007/145 4 {Handheld terminals}
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H04N7/147 3 {Communication arrangements, e.g. identifying the communication as a video-communication, intermediate storage of the signals (selecting H04Q)}
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H04N7/148 3 {Interfacing a video terminal to a particular transmission medium, e.g. ISDN}
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H04N7/15 2 Conference systems
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H04N7/152 3 {Multipoint control units therefor}
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H04N7/155 3 {involving storage of or access to video conference sessions (tracking arrangements for later retrieval of a computer conference content or participants activities H04L12/1831)}
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H04N7/157 3 {defining a virtual conference space and using avatars or agents (computer conference optimisation or adaptation H04L12/1827)}
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H04N7/16 1 Analogue secrecy systems; Analogue subscription systems
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H04N7/161 2 {Constructional details of the subscriber equipment (H04N7/164 takes precedence)}
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H04N7/162 2 {Authorising the user terminal, e.g. by paying; Registering the use of a subscription channel, e.g. billing}
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H04N7/163 3 {by receiver means only}
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H04N7/164 4 {Coin-freed apparatus}
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H04N7/165 3 {Centralised control of user terminal (subsequent to an upstream request signal H04N7/17345); Registering at central (by two-way working H04N7/17309)}
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H04N7/166 2 {Passage/non-passage of the television signal, e.g. jamming, band suppression (scrambling and descrambling H04N7/167)}
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H04N7/167 2 Systems rendering the television signal unintelligible and subsequently intelligible
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H04N7/1675 3 {Providing digital key or authorisation information for generation or regeneration of the scrambling sequence (pseudo-random number generators in general G06F7/58)}
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H04N7/169 3 Systems operating in the time domain of the television signal
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H04N7/1693 4 {by displacing synchronisation signals relative to active picture signals or vice versa}
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H04N7/1696 4 {by changing or reversing the order of active picture signal portions}
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H04N7/171 3 Systems operating in the amplitude domain of the television signal
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H04N7/1713 4 {by modifying synchronisation signals}
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H04N7/1716 4 {by inverting the polarity of active picture signal portions}
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H04N7/173 2 with two-way working, e.g. subscriber sending a programme selection signal
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H04N7/17309 3 {Transmission or handling of upstream communications}
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H04N7/17318 4 {Direct or substantially direct transmission and handling of requests}
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H04N7/17327 4 {with deferred transmission or handling of upstream communications}
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H04N7/17336 4 {Handling of requests in head-ends}
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H04N7/17345 3 {Control of the passage of the selected programme}
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H04N7/17354 4 {in an intermediate station common to a plurality of user terminals}
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H04N7/17363 4 {at or near the user terminal}
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H04N2007/17372 3 {the upstream transmission being initiated or timed by a signal from upstream of the user terminal}
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H04N2007/17381 3 {the upstream transmission being initiated by the user terminal}
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H04N2007/1739 3 {the upstream communication being transmitted via a separate link, e.g. telephone line}
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H04N7/18 1 Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
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H04N7/181 2 {for receiving images from a plurality of remote sources}
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H04N7/183 2 {for receiving images from a single remote source}
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H04N7/185 3 {from a mobile camera, e.g. for remote control}
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H04N7/186 3 {Video door telephones}
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H04N7/188 2 {Capturing isolated or intermittent images triggered by the occurrence of a predetermined event, e.g. an object reaching a predetermined position (signal generation from motion picture films H04N5/253)}
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H04N7/20 1 Adaptations for transmission via a GHz frequency band, e.g. via satellite
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H04N7/22 1 Adaptations for optical transmission
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H04N7/24 1 Systems for the transmission of television signals using pulse code modulation (H04N21/00 takes precedence)
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H04N2007/243 2 {Bitstream control arrangements}
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H04N2007/246 2 {Bitstream transport arrangements}
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H04N7/52 2 Systems for transmission of a pulse code modulated video signal with one or more other pulse code modulated signals, e.g. an audio signal or a synchronizing signal (assembling of a multiplex stream by combining a video stream with other content or additional data, remultiplexing of multiplex streams, insertion of stuffing bits into the multiplex stream, assembling of a packetised elementary stream at server side H04N21/236; disassembling of a multiplex stream, remultiplexing of multiplex streams, extraction or processing of Service Information, disassembling of packetised elementary stream at client side H04N21/434)
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H04N7/54 3 the signals being synchronous {(H04N21/23602, H04N21/23614, H04N21/2365, H04N21/2368, H04N21/4341, H04N21/4342, H04N21/4347, H04N21/4348 take precedence)}
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H04N7/56 4 Synchronising systems therefor
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H04N9/00 0 Details of colour television systems
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H04N9/01 1 Circuitry for demodulating colour component signals modulated spatially by colour striped filters by phase separation
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H04N9/03 1 Circuitry for demodulating colour component signals modulated spatially by colour striped filters by frequency separation
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H04N9/11 1 Scanning of colour motion picture films, e.g. for telecine
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H04N9/12 1 Picture reproducers (H04N9/11 takes precedence)
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H04N9/14 2 using optical-mechanical scanning means only
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H04N9/16 2 using cathode ray tubes (H04N9/11 takes precedence)
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H04N9/18 3 using separate electron beams for the primary colour signals (H04N9/27 takes precedence)
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H04N9/20 4 with more than one beam in a tube
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H04N9/22 3 using the same beam for more than one primary colour information (H04N9/27 takes precedence)
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H04N9/24 4 using means, integral with, or external to, the tube, for producing signal indicating instantaneous beam position
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H04N9/26 4 using electron-optical colour selection means, e.g. line grid, deflection means in or near the gun or near the phosphor screen
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H04N9/27 3 with variable depth of penetration of electron beam into the luminescent layer, e.g. penetrons
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H04N9/28 3 Arrangements for convergence or focusing
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H04N9/285 4 using quadrupole lenses
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H04N9/29 3 using demagnetisation or compensation of external magnetic fields
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H04N9/30 2 using solid-state colour display devices
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H04N9/31 2 Projection devices for colour picture display {, e.g. using electronic spatial light modulators [ESLM]}
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H04N9/3102 3 {using two-dimensional electronic spatial light modulators (micromechanical modulators as such G02B26/0833; liquid crystal modulators as such G02F1/13)}
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H04N9/3105 4 {for displaying all colours simultaneously, e.g. by using two or more electronic spatial light modulators (simultaneous projection in colour photography G03B33/10; beam splitting or combining systems per se G02B27/10)}
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H04N9/3108 5 {by using a single electronic spatial light modulator}
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H04N9/3111 4 {for displaying the colours sequentially, e.g. by using sequentially activated light sources (sequential projection in colour photography G03B33/08)}
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H04N9/3114 5 {by using a sequential colour filter producing one colour at a time}
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H04N9/3117 5 {by using a sequential colour filter producing two or more colours simultaneously, e.g. by creating scrolling colour bands}
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H04N9/312 4 {Driving therefor (driving of electronic spatial light modulators in displays other than projection devices G09G3/34, G09G3/36; control of liquid crystal elements G02F1/133; control of micromechanical modulators G02B26/08)}
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H04N9/3123 5 {using pulse width modulation}
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H04N9/3126 5 {for spatial light modulators in series}
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H04N9/3129 3 {scanning a light beam on the display screen (scanning a light beam on a screen in displays other than projection devices G09G3/02; scanning systems in general G02B26/10; projectors using laser light sources in general H04N9/3161)}
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H04N9/3132 4 {using one-dimensional electronic spatial light modulators}
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H04N9/3135 4 {Driving therefor}
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H04N9/3138 3 {using arrays of modulated light sources (electroluminescent display devices G09G3/30)}
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H04N9/3141 3 {Constructional details thereof (details not peculiar to the presence of an electronic spatial light modulator G03B21/14)}
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H04N9/3144 4 {Cooling systems (cooling of liquid crystal cells in general G02F1/133382; cooling of projectors not peculiar to the presence of an electronic spatial light modulator G03B21/16)}
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H04N9/3147 4 {Multi-projection systems (displays in general H04N9/12; video walls G06F3/1446, G09G2300/026)}
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H04N9/315 4 {Modulator illumination systems (general applications of lighting devices F21V; general optical systems G02B; lamp houses for projectors not peculiar to the presence of an electronic spatial light modulator G03B21/20)}
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H04N9/3152 5 {for shaping the light beam (beam shaping per se G02B27/09)}
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H04N9/3155 5 {for controlling the light source (light source control per se H05B35/00 – H05B47/00; control of an illumination source for displays in general G09G3/3406)}
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H04N9/3158 5 {for controlling the spectrum}
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H04N9/3161 5 {using laser light sources (using laser beams scanning the display screen H04N9/3129)}
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H04N9/3164 5 {using multiple light sources}
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H04N9/3167 5 {for polarizing the light beam (polarizing optical systems per se G02B27/28)}
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H04N9/317 4 {Convergence or focusing systems (electronic adjustment of convergence H04N9/3185; convergence or focusing arrangements for cathode ray tubes H04N9/28; means for automatic focusing of projectors not peculiar to the presence of an electronic spatial light modulator G03B21/53)}
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H04N9/3173 4 {wherein the projection device is specially adapted for enhanced portability}
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H04N9/3176 5 {wherein the projection device is incorporated in a camera (details of cameras adapted for combination with a projector not peculiar to the presence of an electronic spatial light modulator G03B17/54)}
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H04N9/3179 3 {Video signal processing therefor}
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H04N9/3182 4 {Colour adjustment, e.g. white balance, shading or gamut (white balance per se H04N9/73; control of amplitude of colour signals H04N9/68; colour control circuits for displays in general G09G5/02, G09G3/2003, G09G3/3607)}
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H04N9/3185 4 {Geometric adjustment, e.g. keystone or convergence (optical or mechanical adjustment of convergence H04N9/317; using scanning means H04N3/22; optical or mechanical adjustments of projectors not peculiar to the presence of an electronic spatial light modulator G03B21/14)}
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H04N9/3188 4 {Scale or resolution adjustment (scaling in general G06T3/40; resolution modifying circuits for displays in general G09G5/391)}
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H04N9/3191 3 {Testing thereof (testing of displays in general G09G3/006)}
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H04N9/3194 4 {including sensor feedback}
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H04N9/3197 3 {using light modulating optical valves}
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H04N9/43 1 Conversion of monochrome picture signals to colour picture signals for colour picture display
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H04N9/44 1 Colour synchronisation
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H04N9/45 2 Generation or recovery of colour sub-carriers
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H04N9/455 2 Generation of colour burst signals; Insertion of colour burst signals in colour picture signals or separation of colour burst signals from colour picture signals (H04N9/45 takes precedence)
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H04N9/465 2 Synchronisation of the PAL-switch
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H04N9/47 2 for sequential signals
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H04N9/475 2 for mutually locking different synchronisation sources
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H04N9/64 1 Circuits for processing colour signals (H04N9/77 takes precedence; camera processing pipelines for processing colour signals H04N23/84)
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H04N9/641 2 {Multi-purpose receivers, e.g. for auxiliary information (H04N9/642 takes precedence)}
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H04N9/642 2 {Multi-standard receivers}
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H04N9/643 2 {Hue control means, e.g. flesh tone control}
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H04N9/645 2 {Beam current control means}
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H04N9/646 2 {for image enhancement, e.g. vertical detail restoration, cross-colour elimination, contour correction, chrominance trapping filters}
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H04N9/647 2 {I.F amplifiers, (amplifiers in general H03F)}
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H04N9/648 2 {Video amplifiers}
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H04N9/65 2 for synchronous modulators
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H04N9/66 2 for synchronous demodulators
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H04N9/67 2 for matrixing (camera processing pipelines for matrixing of colour signals H04N23/85)
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H04N9/68 2 for controlling the amplitude of colour signals, e.g. automatic chroma control circuits (H04N9/71, H04N9/73 take precedence; camera processing pipelines for controlling the colour saturation of colour signals H04N23/86)
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H04N9/69 3 for modifying the colour signals by gamma correction (controlling camera response for colour signals H04N23/83)
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H04N9/70 2 for colour killing
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H04N9/71 3 combined with colour gain control
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H04N9/72 2 for reinsertion of DC and slowly varying components of colour signals (camera processing pipelines for reinsertion of DC or slowly varying components of colour signals H04N23/87)
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H04N9/73 2 Colour balance circuits, e.g. white balance circuits or colour temperature control (camera processing pipelines for colour balance H04N23/88)
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H04N9/74 2 for obtaining special effects (H04N9/65 - H04N9/73 take precedence)
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H04N9/75 3 Chroma key
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H04N9/76 3 for mixing of colour signals (H04N9/75 takes precedence)
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H04N9/77 1 Circuits for processing the brightness signal and the chrominance signal relative to each other, e.g. adjusting the phase of the brightness signal relative to the colour signal, correcting differential gain or differential phase (circuits for matrixing H04N9/67)
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H04N9/78 2 for separating the brightness signal or the chrominance signal from the colour television signal, e.g. using comb filter
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H04N9/79 1 Processing of colour television signals in connection with recording
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H04N9/7904 2 {using intermediate digital signal processing}
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H04N9/7908 2 {Suppression of interfering signals at the reproducing side, e.g. noise}
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H04N9/7912 3 {the interfering signals being intermodulation signals}
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H04N9/7917 3 {the interfering signals being cross-talk signals}
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H04N9/7921 2 {for more than one processing mode}
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H04N9/7925 3 {for more than one standard}
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H04N9/793 2 for controlling the level of the chrominance signal, e.g. by means of automatic chroma control circuits
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H04N9/7933 3 {the level control being frequency-dependent}
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H04N9/7936 4 {by using a preemphasis network at the recording side and a deemphasis network at the reproducing side}
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H04N9/797 2 for recording the signal in a plurality of channels, the bandwidth of each channel being less than the bandwidth of the signal (H04N9/804, H04N9/81, H04N9/82 take precedence)
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H04N9/7973 3 {by dividing the luminance or colour component signal samples or frequency bands among a plurality of recording channels (H04N9/804, H04N9/825 take precedence)}
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H04N9/7976 3 {by spectrum folding of the high frequency components of the luminance signal}
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H04N9/80 2 Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback
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H04N9/802 3 involving processing of the sound signal (H04N9/806, H04N9/835 take precedence)
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H04N9/804 3 involving pulse code modulation of the colour picture signal components
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H04N9/8042 4 {involving data reduction}
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H04N9/8045 5 {using predictive coding}
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H04N9/8047 5 {using transform coding}
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H04N9/806 4 with processing of the sound signal
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H04N9/8063 5 {using time division multiplex of the PCM audio and PCM video signals}
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H04N9/8066 6 {with insertion of the PCM audio signals in the vertical blanking interval of the PCM video signal}
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H04N9/808 3 involving pulse code modulation of the composite colour video-signal
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H04N9/8081 4 {involving data reduction}
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H04N9/8082 5 {using predictive coding}
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H04N2009/8084 5 {using transform coding}
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H04N9/8085 4 {with processing of the sound signal}
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H04N9/8087 5 {using time division multiplex of the PCM audio and PCM video signals}
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H04N9/8088 6 {with insertion of the PCM audio signals in the vertical blanking interval of the PCM video signal}
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H04N9/81 3 the individual colour picture signal components being recorded sequentially only
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H04N9/82 3 the individual colour picture signal components being recorded simultaneously only
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H04N9/8205 4 {involving the multiplexing of an additional signal and the colour video signal}
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H04N9/8211 5 {the additional signal being a sound signal (H04N9/835 takes precedence)}
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H04N9/8216 6 {using time division multiplex}
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H04N9/8222 6 {using frequency division multiplex}
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H04N9/8227 5 {the additional signal being at least another television signal}
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H04N9/8233 5 {the additional signal being a character code signal}
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H04N9/8238 6 {for teletext}
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H04N9/8244 6 {involving the use of subcodes}
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H04N9/825 4 the luminance and chrominance signals being recorded in separate channels
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H04N9/8255 5 {with sound processing}
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H04N9/83 4 the recorded chrominance signal occupying a frequency band under the frequency band of the recorded brightness signal
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H04N9/831 5 {using intermediate digital signal processing}
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H04N9/832 5 {using an increased bandwidth for the luminance or the chrominance signal}
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H04N9/833 6 {with selection of the conventional or the increased bandwidth signal, e.g. VHS or SVHS signal selection}
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H04N9/835 5 involving processing of the sound signal
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H04N9/8355 6 {the sound carriers being frequency multiplexed between the luminance carrier and the chrominance carrier}
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H04N9/84 5 the recorded signal showing a feature, which is different in adjacent track parts, e.g. different phase or frequency
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H04N9/85 4 the recorded brightness signal occupying a frequency band totally overlapping the frequency band of the recorded chrominance signal, e.g. frequency interleaving
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H04N9/86 3 the individual colour picture signal components being recorded sequentially and simultaneously, e.g. corresponding to SECAM-system
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H04N9/87 2 Regeneration of colour television signals (H04N9/80 takes precedence)
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H04N9/8707 3 {using a demodulator and a remodulator, e.g. for standard conversion}
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H04N9/8715 3 {involving the mixing of the reproduced video signal with a non-recorded signal, e.g. a text signal}
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H04N9/8722 3 {Regeneration of a colour reference signal, e.g. the colour synchronisaton burst signal, the chrominance signal carrier}
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H04N9/873 3 for restoring the colour component sequence of the reproduced {chrominance} signal
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H04N9/877 3 by assembling picture element blocks in an intermediate memory
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H04N9/88 3 Signal drop-out compensation
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H04N9/882 4 the signal being a composite colour television signal
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H04N9/885 5 using a digital intermediate memory
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H04N9/888 4 for signals recorded by pulse code modulation
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H04N9/89 3 Time-base error compensation
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H04N9/893 4 using an analogue memory, e.g. a CCD shift register, the delay of which is controlled by a voltage controlled oscillator
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H04N9/896 4 using a digital memory with independent write-in and read-out clock generators
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H04N9/898 3 using frequency multiplication of the reproduced colour signal carrier with another auxiliary reproduced signal, e.g. a pilot signal carrier {(H04N9/83 takes precedence)}
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H04N11/00 0 Colour television systems (details H04N9/00)
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H04N11/02 1 with bandwidth reduction (H04N11/04 {, H04N11/24} take precedence)
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H04N11/04 1 using pulse code modulation {(H04N11/24 takes precedence)}
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H04N11/042 2 {Codec means}
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H04N11/044 3 {involving transform coding}
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H04N11/046 3 {DPCM}
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H04N11/048 3 {Sub-Nyquist sampling}
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H04N11/06 1 Transmission systems characterised by the manner in which the individual colour picture signal components are combined
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H04N11/08 2 using sequential signals only (dot sequential systems H04N11/12)
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H04N11/10 3 in which colour signals are inserted in the blanking interval of brightness signal
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H04N11/12 2 using simultaneous signals only
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H04N11/14 3 in which one signal, modulated in phase and amplitude, conveys colour information and a second signal conveys brightness information, e.g. NTSC-system
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H04N11/143 4 {Encoding means therefor (H04N11/16 takes precedence)}
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H04N11/146 4 {Decoding means therefor (H04N11/16 takes precedence)}
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H04N11/16 4 the chrominance signal alternating in phase, e.g. PAL-system
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H04N11/162 5 {Encoding means therefor (H04N11/167 takes precedence)}
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H04N11/165 5 {Decoding means therefor (H04N11/167 takes precedence)}
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H04N11/167 5 {a resolution-increasing signal being multiplexed to the PAL-system signal, e.g. PAL-PLUS-system}
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H04N11/18 2 using simultaneous and sequential signals, e.g. SECAM-system
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H04N11/183 3 {Encoding means therefor}
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H04N11/186 3 {Decoding means therefor}
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H04N11/20 2 Conversion of the manner in which the individual colour picture signal components are combined, e.g. conversion of colour television standards
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H04N11/22 3 in which simultaneous signals are converted into sequential signals or vice versa
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H04N11/24 1 High-definition television systems
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H04N11/26 2 {involving two-channel transmission}
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H04N11/28 2 {involving bandwidth reduction, e.g. subsampling}
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H04N11/30 2 {with transmission of the extra information by means of quadrature modulation}
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H04N13/00 0 Stereoscopic video systems; Multi-view video systems; Details thereof
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H04N2013/0074 1 {Stereoscopic image analysis}
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H04N2013/0077 2 {Colour aspects}
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H04N2013/0081 2 {Depth or disparity estimation from stereoscopic image signals}
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H04N2013/0085 2 {Motion estimation from stereoscopic image signals}
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H04N2013/0088 2 {Synthesising a monoscopic image signal from stereoscopic images, e.g. synthesising a panoramic or high resolution monoscopic image}
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H04N2013/0092 2 {Image segmentation from stereoscopic image signals}
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H04N2013/0096 2 {Synchronisation or controlling aspects}
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H04N13/10 1 Processing, recording or transmission of stereoscopic or multi-view image signals
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H04N13/106 2 Processing image signals (for multi-view video sequence encoding H04N19/597)
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H04N13/111 3 Transformation of image signals corresponding to virtual viewpoints, e.g. spatial image interpolation
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H04N13/117 4 the virtual viewpoint locations being selected by the viewers or determined by viewer tracking
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H04N13/122 3 Improving the 3D impression of stereoscopic images by modifying image signal contents, e.g. by filtering or adding monoscopic depth cues (H04N13/128 takes precedence)
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H04N13/125 4 for crosstalk reduction
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H04N13/128 3 Adjusting depth or disparity
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H04N13/133 3 Equalising the characteristics of different image components, e.g. their average brightness or colour balance
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H04N13/139 3 Format conversion, e.g. of frame-rate or size
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H04N13/144 3 for flicker reduction
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H04N13/15 3 for colour aspects of image signals
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H04N13/156 3 Mixing image signals
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H04N13/158 3 {Switching image signals}
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H04N13/161 3 Encoding, multiplexing or demultiplexing different image signal components (for multi-view video sequence encoding H04N19/597)
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H04N13/167 3 Synchronising or controlling image signals
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H04N13/172 3 image signals comprising non-image signal components, e.g. headers or format information
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H04N13/178 4 Metadata, e.g. disparity information
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H04N13/183 4 On-screen display [OSD] information, e.g. subtitles or menus
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H04N13/189 2 Recording image signals; Reproducing recorded image signals
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H04N13/194 2 Transmission of image signals
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H04N13/20 1 Image signal generators
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H04N13/204 2 using stereoscopic image cameras (stereoscopic photography G03B35/00)
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H04N13/207 3 using a single 2D image sensor
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H04N13/211 4 using temporal multiplexing
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H04N13/214 4 using spectral multiplexing
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H04N13/218 4 using spatial multiplexing
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H04N13/221 4 using the relative movement between cameras and objects
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H04N13/225 4 using parallax barriers
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H04N13/229 4 using lenticular lenses, e.g. arrangements of cylindrical lenses
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H04N13/232 4 using fly-eye lenses, e.g. arrangements of circular lenses
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H04N13/236 4 using varifocal lenses or mirrors
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H04N13/239 3 using two 2D image sensors having a relative position equal to or related to the interocular distance (H04N13/243 takes precedence)
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H04N13/243 3 using three or more 2D image sensors
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H04N13/246 3 Calibration of cameras
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H04N13/25 3 using two or more image sensors with different characteristics other than in their location or field of view, e.g. having different resolutions or colour pickup characteristics; using image signals from one sensor to control the characteristics of another sensor
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H04N13/254 3 in combination with electromagnetic radiation sources for illuminating objects
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H04N13/257 2 Colour aspects
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H04N13/261 2 with monoscopic-to-stereoscopic image conversion
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H04N13/264 3 using the relative movement of objects in two video frames or fields
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H04N13/266 3 {by scanning a film}
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H04N13/268 3 based on depth image-based rendering [DIBR]
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H04N13/271 2 wherein the generated image signals comprise depth maps or disparity maps
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H04N13/275 2 from 3D object models, e.g. computer-generated stereoscopic image signals
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H04N13/279 3 the virtual viewpoint locations being selected by the viewers or determined by tracking
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H04N13/282 2 for generating image signals corresponding to three or more geometrical viewpoints, e.g. multi-view systems
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H04N13/286 2 having separate monoscopic and stereoscopic modes
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H04N13/289 3 Switching between monoscopic and stereoscopic modes
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H04N13/293 2 Generating mixed stereoscopic images; Generating mixed monoscopic and stereoscopic images, e.g. a stereoscopic image overlay window on a monoscopic image background
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H04N13/296 2 Synchronisation thereof; Control thereof
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H04N13/30 1 Image reproducers (optical systems for producing stereoscopic or other three-dimensional effects G02B30/00)
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H04N13/302 2 for viewing without the aid of special glasses, i.e. using autostereoscopic displays
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H04N13/305 3 using lenticular lenses, e.g. arrangements of cylindrical lenses
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H04N13/307 3 using fly-eye lenses, e.g. arrangements of circular lenses
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H04N13/31 3 using parallax barriers
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H04N13/312 4 the parallax barriers being placed behind the display panel, e.g. between backlight and spatial light modulator [SLM]
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H04N13/315 4 the parallax barriers being time-variant
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H04N13/317 3 using slanted parallax optics
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H04N13/32 3 using arrays of controllable light sources; using moving apertures or moving light sources
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H04N13/322 3 using varifocal lenses or mirrors
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H04N13/324 2 Colour aspects
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H04N13/327 2 Calibration thereof
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H04N13/332 2 Displays for viewing with the aid of special glasses or head-mounted displays [HMD]
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H04N13/334 3 using spectral multiplexing
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H04N13/337 3 using polarisation multiplexing
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H04N13/339 3 using spatial multiplexing (H04N13/337 takes precedence)
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H04N13/341 3 using temporal multiplexing
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H04N13/344 3 with head-mounted left-right displays
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H04N13/346 2 using prisms or semi-transparent mirrors
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H04N13/349 2 Multi-view displays for displaying three or more geometrical viewpoints without viewer tracking (for viewing without the aid of special glasses using fly-eye lenses H04N13/307)
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H04N13/351 3 for displaying simultaneously
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H04N13/354 3 for displaying sequentially
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H04N13/356 2 having separate monoscopic and stereoscopic modes
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H04N13/359 3 Switching between monoscopic and stereoscopic modes
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H04N13/361 2 Reproducing mixed stereoscopic images; Reproducing mixed monoscopic and stereoscopic images, e.g. a stereoscopic image overlay window on a monoscopic image background
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H04N13/363 2 using image projection screens (volumetric display H04N13/388)
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H04N13/365 2 using digital micromirror devices [DMD]
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H04N13/366 2 using viewer tracking
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H04N13/368 3 for two or more viewers
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H04N13/371 3 for tracking viewers with different interocular distances; for tracking rotational head movements around the vertical axis
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H04N13/373 3 for tracking forward-backward translational head movements, i.e. longitudinal movements
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H04N13/376 3 for tracking left-right translational head movements, i.e. lateral movements
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H04N13/378 3 for tracking rotational head movements around an axis perpendicular to the screen
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H04N13/38 3 for tracking vertical translational head movements
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H04N13/383 3 for tracking with gaze detection, i.e. detecting the lines of sight of the viewer's eyes
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H04N13/385 2 alternating rapidly the location of the left-right image components on the display screens (for viewing without the aid of special glasses using time variant parallax barriers H04N13/315; displays for viewing with the aid of special glasses or head-mounted displays using temporal multiplexing H04N13/341)
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H04N13/388 2 Volumetric displays, i.e. systems where the image is built up from picture elements distributed through a volume
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H04N13/39 3 the picture elements emitting light at places where a pair of light beams intersect in a transparent material
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H04N13/393 3 the volume being generated by a moving, e.g. vibrating or rotating, surface
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H04N13/395 3 with depth sampling, i.e. the volume being constructed from a stack or sequence of 2D image planes
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H04N13/398 2 Synchronisation thereof; Control thereof
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H04N2013/40 2 {Privacy aspects, i.e. devices showing different images to different viewers, the images not being viewpoints of the same scene}
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H04N2013/403 3 {the images being monoscopic}
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H04N2013/405 3 {the images being stereoscopic or three dimensional}
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H04N17/00 0 Diagnosis, testing or measuring for television systems or their details
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H04N17/002 1 {for television cameras}
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H04N17/004 1 {for digital television systems}
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H04N2017/006 1 {for television sound}
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H04N2017/008 1 {for television teletext}
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H04N17/02 1 for colour television signals
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H04N17/04 1 for receivers
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H04N17/045 2 {Self-contained testing apparatus}
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H04N17/06 1 for recorders
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H04N19/00 0 Methods or arrangements for coding, decoding, compressing or decompressing digital video signals
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H04N19/10 1 using adaptive coding
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H04N19/102 2 characterised by the element, parameter or selection affected or controlled by the adaptive coding
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H04N19/103 3 Selection of coding mode or of prediction mode
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H04N19/105 4 Selection of the reference unit for prediction within a chosen coding or prediction mode, e.g. adaptive choice of position and number of pixels used for prediction
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H04N19/107 4 between spatial and temporal predictive coding, e.g. picture refresh
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H04N19/109 4 among a plurality of temporal predictive coding modes
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H04N19/11 4 among a plurality of spatial predictive coding modes
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H04N19/112 4 according to a given display mode, e.g. for interlaced or progressive display mode
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H04N19/114 4 Adapting the group of pictures [GOP] structure, e.g. number of B-frames between two anchor frames (H04N19/107 takes precedence)
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H04N19/115 3 Selection of the code volume for a coding unit prior to coding
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H04N19/117 3 Filters, e.g. for pre-processing or post-processing (sub-band filter banks H04N19/635)
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H04N19/119 3 Adaptive subdivision aspects, e.g. subdivision of a picture into rectangular or non-rectangular coding blocks
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H04N19/12 3 Selection from among a plurality of transforms or standards, e.g. selection between discrete cosine transform [DCT] and sub-band transform or selection between H.263 and H.264
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H04N19/122 4 Selection of transform size, e.g. 8x8 or 2x4x8 DCT; Selection of sub-band transforms of varying structure or type
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H04N19/124 3 Quantisation
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H04N19/126 4 Details of normalisation or weighting functions, e.g. normalisation matrices or variable uniform quantisers
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H04N19/127 3 Prioritisation of hardware or computational resources
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H04N19/129 3 Scanning of coding units, e.g. zig-zag scan of transform coefficients or flexible macroblock ordering [FMO]
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H04N19/13 3 Adaptive entropy coding, e.g. adaptive variable length coding [AVLC] or context adaptive binary arithmetic coding [CABAC]
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H04N19/132 3 Sampling, masking or truncation of coding units, e.g. adaptive resampling, frame skipping, frame interpolation or high-frequency transform coefficient masking
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H04N19/134 2 characterised by the element, parameter or criterion affecting or controlling the adaptive coding
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H04N19/136 3 Incoming video signal characteristics or properties
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H04N19/137 4 Motion inside a coding unit, e.g. average field, frame or block difference
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H04N19/139 5 Analysis of motion vectors, e.g. their magnitude, direction, variance or reliability
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H04N19/14 4 Coding unit complexity, e.g. amount of activity or edge presence estimation (H04N19/146 takes precedence)
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H04N19/142 3 Detection of scene cut or scene change
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H04N19/146 3 Data rate or code amount at the encoder output
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H04N19/147 4 according to rate distortion criteria (rate-distortion as a criterion for motion estimation H04N19/567)
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H04N19/149 4 by estimating the code amount by means of a model, e.g. mathematical model or statistical model
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H04N19/15 4 by monitoring actual compressed data size at the memory before deciding storage at the transmission buffer
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H04N19/152 4 by measuring the fullness of the transmission buffer
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H04N19/154 3 Measured or subjectively estimated visual quality after decoding, e.g. measurement of distortion (use of rate-distortion criteria H04N19/147)
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H04N19/156 3 Availability of hardware or computational resources, e.g. encoding based on power-saving criteria
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H04N19/157 3 Assigned coding mode, i.e. the coding mode being predefined or preselected to be further used for selection of another element or parameter
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H04N19/159 4 Prediction type, e.g. intra-frame, inter-frame or bidirectional frame prediction
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H04N19/16 4 for a given display mode, e.g. for interlaced or progressive display mode
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H04N19/162 3 User input
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H04N19/164 3 Feedback from the receiver or from the transmission channel
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H04N19/166 4 concerning the amount of transmission errors, e.g. bit error rate [BER]
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H04N19/167 3 Position within a video image, e.g. region of interest [ROI]
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H04N19/169 2 characterised by the coding unit, i.e. the structural portion or semantic portion of the video signal being the object or the subject of the adaptive coding
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H04N19/17 3 the unit being an image region, e.g. an object
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H04N19/172 4 the region being a picture, frame or field
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H04N19/174 4 the region being a slice, e.g. a line of blocks or a group of blocks
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H04N19/176 4 the region being a block, e.g. a macroblock
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H04N19/177 3 the unit being a group of pictures [GOP]
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H04N19/179 3 the unit being a scene or a shot
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H04N19/18 3 the unit being a set of transform coefficients
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H04N19/182 3 the unit being a pixel
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H04N19/184 3 the unit being bits, e.g. of the compressed video stream
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H04N19/186 3 the unit being a colour or a chrominance component
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H04N19/187 3 the unit being a scalable video layer
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H04N19/188 3 {the unit being a video data packet, e.g. a network abstraction layer [NAL] unit}
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H04N19/1883 3 {the unit relating to sub-band structure, e.g. hierarchical level, directional tree, e.g. low-high [LH], high-low [HL], high-high [HH]}
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H04N19/1887 3 {the unit being a variable length codeword}
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H04N19/189 2 characterised by the adaptation method, adaptation tool or adaptation type used for the adaptive coding
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H04N19/19 3 using optimisation based on Lagrange multipliers
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H04N19/192 3 the adaptation method, adaptation tool or adaptation type being iterative or recursive
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H04N19/194 4 involving only two passes
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H04N19/196 3 being specially adapted for the computation of encoding parameters, e.g. by averaging previously computed encoding parameters (processing of motion vectors H04N19/513)
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H04N19/197 4 {including determination of the initial value of an encoding parameter (H04N19/56 takes precedence)}
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H04N19/198 4 {including smoothing of a sequence of encoding parameters, e.g. by averaging, by choice of the maximum, minimum or median value}
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H04N19/20 1 using video object coding
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H04N19/21 2 with binary alpha-plane coding for video objects, e.g. context-based arithmetic encoding [CAE]
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H04N19/23 2 with coding of regions that are present throughout a whole video segment, e.g. sprites, background or mosaic
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H04N19/25 2 with scene description coding, e.g. binary format for scenes [BIFS] compression
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H04N19/27 2 involving both synthetic and natural picture components, e.g. synthetic natural hybrid coding [SNHC]
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H04N19/29 2 involving scalability at the object level, e.g. video object layer [VOL]
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H04N19/30 1 using hierarchical techniques, e.g. scalability (H04N19/63 takes precedence)
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H04N19/31 2 in the temporal domain
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H04N19/33 2 in the spatial domain
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H04N19/34 2 Scalability techniques involving progressive bit-plane based encoding of the enhancement layer, e.g. fine granular scalability [FGS]
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H04N19/36 2 Scalability techniques involving formatting the layers as a function of picture distortion after decoding, e.g. signal-to-noise [SNR] scalability
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H04N19/37 2 with arrangements for assigning different transmission priorities to video input data or to video coded data
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H04N19/39 2 involving multiple description coding [MDC], i.e. with separate layers being structured as independently decodable descriptions of input picture data
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H04N19/395 2 {involving distributed video coding [DVC], e.g. Wyner-Ziv video coding or Slepian-Wolf video coding}
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H04N19/40 1 using video transcoding, i.e. partial or full decoding of a coded input stream followed by re-encoding of the decoded output stream
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H04N19/42 1 characterised by implementation details or hardware specially adapted for video compression or decompression, e.g. dedicated software implementation (H04N19/635 takes precedence)
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H04N19/423 2 characterised by memory arrangements (H04N19/433 takes precedence)
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H04N19/426 3 using memory downsizing methods
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H04N19/427 4 {Display on the fly, e.g. simultaneous writing to and reading from decoding memory}
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H04N19/428 4 {Recompression, e.g. by spatial or temporal decimation}
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H04N19/43 2 Hardware specially adapted for motion estimation or compensation
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H04N19/433 3 characterised by techniques for memory access
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H04N19/436 2 using parallelised computational arrangements
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H04N19/439 2 {using cascaded computational arrangements for performing a single operation, e.g. filtering}
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H04N19/44 1 Decoders specially adapted therefor, e.g. video decoders which are asymmetric with respect to the encoder
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H04N19/45 2 {performing compensation of the inverse transform mismatch, e.g. Inverse Discrete Cosine Transform [IDCT] mismatch}
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H04N19/46 1 Embedding additional information in the video signal during the compression process (H04N19/517, H04N19/68, H04N19/70 take precedence)
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H04N19/463 2 by compressing encoding parameters before transmission
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H04N19/467 2 characterised by the embedded information being invisible, e.g. watermarking
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H04N19/48 1 using compressed domain processing techniques other than decoding, e.g. modification of transform coefficients, variable length coding [VLC] data or run-length data (motion estimation in a transform domain H04N19/547; processing of decoded motion vectors H04N19/513)
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H04N19/50 1 using predictive coding (H04N19/61 takes precedence)
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H04N19/503 2 involving temporal prediction (adaptive coding with adaptive selection between spatial and temporal predictive coding H04N19/107; adaptive coding with adaptive selection among a plurality of temporal predictive coding modes H04N19/109)
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H04N19/507 3 using conditional replenishment
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H04N19/51 3 Motion estimation or motion compensation
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H04N19/513 4 Processing of motion vectors
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H04N19/517 5 by encoding
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H04N19/52 6 by predictive encoding
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H04N19/521 5 {for estimating the reliability of the determined motion vectors or motion vector field, e.g. for smoothing the motion vector field or for correcting motion vectors}
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H04N19/523 4 with sub-pixel accuracy
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H04N19/527 4 Global motion vector estimation
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H04N19/53 4 Multi-resolution motion estimation; Hierarchical motion estimation
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H04N19/533 4 Motion estimation using multistep search, e.g. 2D-log search or one-at-a-time search [OTS]
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H04N19/537 4 Motion estimation other than block-based
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H04N19/54 5 using feature points or meshes
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H04N19/543 5 using regions
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H04N19/547 4 Motion estimation performed in a transform domain
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H04N19/55 4 Motion estimation with spatial constraints, e.g. at image or region borders
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H04N19/553 4 Motion estimation dealing with occlusions
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H04N19/557 4 Motion estimation characterised by stopping computation or iteration based on certain criteria, e.g. error magnitude being too large or early exit
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H04N19/56 4 Motion estimation with initialisation of the vector search, e.g. estimating a good candidate to initiate a search
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H04N19/563 4 Motion estimation with padding, i.e. with filling of non-object values in an arbitrarily shaped picture block or region for estimation purposes
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H04N19/567 4 Motion estimation based on rate distortion criteria
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H04N19/57 4 Motion estimation characterised by a search window with variable size or shape
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H04N19/573 4 Motion compensation with multiple frame prediction using two or more reference frames in a given prediction direction
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H04N19/577 4 Motion compensation with bidirectional frame interpolation, i.e. using B-pictures
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H04N19/58 4 Motion compensation with long-term prediction, i.e. the reference frame for a current frame not being the temporally closest one (H04N19/23 takes precedence)
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H04N19/583 4 Motion compensation with overlapping blocks
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H04N19/587 2 involving temporal sub-sampling or interpolation, e.g. decimation or subsequent interpolation of pictures in a video sequence
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H04N19/59 2 involving spatial sub-sampling or interpolation, e.g. alteration of picture size or resolution
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H04N19/593 2 involving spatial prediction techniques
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H04N19/597 2 specially adapted for multi-view video sequence encoding
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H04N19/60 1 using transform coding
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H04N19/61 2 in combination with predictive coding
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H04N19/615 3 using motion compensated temporal filtering [MCTF]
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H04N19/619 3 {the transform being operated outside the prediction loop}
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H04N19/62 2 by frequency transforming in three dimensions (H04N19/63 takes precedence)
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H04N19/625 2 using discrete cosine transform [DCT]
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H04N19/63 2 using sub-band based transform, e.g. wavelets
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H04N19/635 3 characterised by filter definition or implementation details
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H04N19/64 3 characterised by ordering of coefficients or of bits for transmission
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H04N19/645 4 by grouping of coefficients into blocks after the transform
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H04N19/647 4 {using significance based coding, e.g. Embedded Zerotrees of Wavelets [EZW] or Set Partitioning in Hierarchical Trees [SPIHT]}
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H04N19/649 2 {the transform being applied to non rectangular image segments}
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H04N19/65 1 using error resilience
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H04N19/66 2 involving data partitioning, i.e. separation of data into packets or partitions according to importance
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H04N19/67 2 involving unequal error protection [UEP], i.e. providing protection according to the importance of the data
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H04N19/68 2 involving the insertion of resynchronisation markers into the bitstream
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H04N19/69 2 involving reversible variable length codes [RVLC]
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H04N19/70 1 characterised by syntax aspects related to video coding, e.g. related to compression standards
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H04N19/80 1 Details of filtering operations specially adapted for video compression, e.g. for pixel interpolation (H04N19/635, H04N19/86 take precedence)
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H04N19/82 2 involving filtering within a prediction loop
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H04N19/85 1 using pre-processing or post-processing specially adapted for video compression
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H04N19/86 2 involving reduction of coding artifacts, e.g. of blockiness
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H04N19/865 3 {with detection of the former encoding block subdivision in decompressed video}
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H04N19/87 2 involving scene cut or scene change detection in combination with video compression
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H04N19/88 2 involving rearrangement of data among different coding units, e.g. shuffling, interleaving, scrambling or permutation of pixel data or permutation of transform coefficient data among different blocks
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H04N19/89 2 involving methods or arrangements for detection of transmission errors at the decoder
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H04N19/895 3 in combination with error concealment
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H04N19/90 1 using coding techniques not provided for in groups H04N19/10-H04N19/85, e.g. fractals
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H04N19/91 2 Entropy coding, e.g. variable length coding [VLC] or arithmetic coding
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H04N19/93 2 Run-length coding
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H04N19/94 2 Vector quantisation
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H04N19/96 2 Tree coding, e.g. quad-tree coding
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H04N19/97 2 Matching pursuit coding
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H04N19/98 2 Adaptive-dynamic-range coding [ADRC]
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H04N19/99 2 {involving fractal coding}
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H04N21/00 0 Selective content distribution, e.g. interactive television or video on demand [VOD] (real-time bi-directional transmission of motion video data H04N7/14 {; broadcast or conference over packet switching networks H04L12/18})
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H04N21/20 1 Servers specifically adapted for the distribution of content, e.g. VOD servers; Operations thereof
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H04N21/21 2 Server components or server architectures
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H04N21/214 3 Specialised server platform, e.g. server located in an airplane, hotel, hospital {(arrangements specially adapted for local area broadcast systems H04H20/61)}
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H04N21/2143 4 {located in a single building, e.g. hotel, hospital or museum (arrangements specially adapted for plural spots in a confined site in broadcast systems H04H20/63; adaptations for transmission by electric cable for domestic distribution in television systems H04N7/106)}
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H04N21/2146 4 {located in mass transportation means, e.g. aircraft, train or bus (flight-deck installations for entertainment or communications B64D11/0015; arrangements specially adapted for transportation systems in broadcast systems H04H20/62; moving wireless networks H04W84/005)}
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H04N21/218 3 Source of audio or video content {, e.g. local disk arrays (details of retrieval in video databases G06F16/739)}
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H04N21/21805 4 {enabling multiple viewpoints, e.g. using a plurality of cameras}
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H04N21/2181 4 {comprising remotely distributed storage units, e.g. when movies are replicated over a plurality of video servers (distributed storage of data in networks, e.g. transport arrangements for network file system [NFS], storage area networks [SAN] or network attached storage [NAS], H04L67/1097)}
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H04N21/21815 4 {comprising local storage units}
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H04N21/2182 5 {involving memory arrays, e.g. RAID disk arrays (RAID arrays per se G06F3/0689; use of parity to protect data in RAID systems G06F11/1008)}
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H04N21/21825 5 {involving removable storage units, e.g. tertiary storage such as magnetic tapes or optical disks}
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H04N21/2183 4 Cache memory {(caches in web servers or browsers G06F16/9574; intermediate storage and caching in data networks H04L67/568)}
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H04N21/2187 4 Live feed
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H04N21/222 3 Secondary servers, e.g. proxy server, cable television Head-end {(provisioning of proxy services in data packet switching networks H04L67/56)}
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H04N21/2221 4 {being a cable television head-end (CATV in broadcast systems H04H20/78)}
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H04N21/2223 4 {being a public access point, e.g. for downloading to or uploading from clients (arrangements specially adapted to plural spots in a confined site in broadcast systems H04H20/63)}
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H04N21/2225 4 Local VOD servers
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H04N21/226 3 {Characteristics of the server or} Internal components of the server
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H04N21/2265 4 {Server identification by a unique number or address, e.g. serial number (network arrangements, protocols or services for addressing or naming H04L61/00)}
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H04N21/23 2 Processing of content or additional data; Elementary server operations; Server middleware
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H04N21/231 3 Content storage operation, e.g. caching movies for short term storage, replicating data over plural servers, prioritizing data for deletion
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H04N21/23103 4 {using load balancing strategies, e.g. by placing or distributing content on different disks, different memories or different servers (storage management G06F3/0604; allocation of resources considering the load in multiprogramming arrangements G06F9/505; techniques for rebalancing the load in a distributed system G06F9/5083; access to distributed or replicated servers, e.g. load balancing, in data networks H04L67/1001)}
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H04N21/23106 4 {involving caching operations (prefetching while addressing of a memory level in which the access to the desired data or data block requires associative addressing means within memory systems or architectures G06F12/0862; caching at an intermediate stage in a data network H04L67/568)}
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H04N21/23109 4 {by placing content in organized collections, e.g. EPG data repository (details of retrieval of video data and associated meta data in video databases G06F16/739)}
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H04N21/23113 4 {involving housekeeping operations for stored content, e.g. prioritizing content for deletion because of storage space restrictions (storage management, e.g. defragmentation G06F3/0604; snloading stored programs G06F9/445; housekeeping operations in file systems, e.g. deletion policies G06F16/10; buffering arrangements in a network node or in an end terminal in packet networks H04L49/90)}
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H04N21/23116 4 {involving data replication, e.g. over plural servers (synchronization of replicated data G06F11/1658; error detection or correction by means of data replication G06F11/2053; replication in distributed file systems G06F16/10; replication in distributed file systems G06F16/27; replication or mirroring of data in data networks H04L67/1095)}
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H04N21/2312 4 Data placement on disk arrays {(data placement in general G06F3/0604)}
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H04N21/2315 5 using interleaving
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H04N21/2318 5 using striping
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H04N21/232 3 Content retrieval operation {locally} within server, e.g. reading video streams from disk arrays {(storage management G06F3/0604; details of querying and searching of video data from a database G06F16/739)}
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H04N21/2323 4 {using file mapping}
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H04N21/2326 4 {Scheduling disk or memory reading operations}
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H04N21/233 3 Processing of audio elementary streams {(monitoring, identification or recognition of audio in broadcast systems H04H60/58)}
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H04N21/2335 4 {involving reformatting operations of audio signals, e.g. by converting from one coding standard to another (details of audio signal transcoding G10L19/173)}
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H04N21/234 3 Processing of video elementary streams, e.g. splicing of video streams, manipulating MPEG-4 scene graphs
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H04N21/23406 4 {involving management of server-side video buffer}
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H04N21/23412 4 {for generating or manipulating the scene composition of objects, e.g. MPEG-4 objects}
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H04N21/23418 4 {involving operations for analysing video streams, e.g. detecting features or characteristics (television picture signal circuitry for scene change detection H04N5/147; filtering for image enhancement G06T5/00; methods or arrangements for recognising scenes G06V20/00; arrangements characterised by components specially adapted for monitoring, identification or recognition of video in broadcast systems H04H60/59)}
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H04N21/23424 4 {involving splicing one content stream with another content stream, e.g. for inserting or substituting an advertisement}
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H04N21/2343 4 involving reformatting operations of video signals for distribution or compliance with end-user requests or end-user device requirements {(video transcoding H04N19/40; media packet handling at the source H04L65/762)}
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H04N21/234309 5 {by transcoding between formats or standards, e.g. from MPEG-2 to MPEG-4 or from Quicktime to Realvideo (conversion of standards in analog television systems H04N7/01)}
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H04N21/234318 5 {by decomposing into objects, e.g. MPEG-4 objects}
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H04N21/234327 5 {by decomposing into layers, e.g. base layer and one or more enhancement layers}
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H04N21/234336 5 {by media transcoding, e.g. video is transformed into a slideshow of still pictures or audio is converted into text}
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H04N21/234345 5 {the reformatting operation being performed only on part of the stream, e.g. a region of the image or a time segment}
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H04N21/234354 5 {by altering signal-to-noise ratio parameters, e.g. requantization}
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H04N21/234363 5 {by altering the spatial resolution, e.g. for clients with a lower screen resolution}
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H04N21/234372 6 {for performing aspect ratio conversion}
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H04N21/234381 5 {by altering the temporal resolution, e.g. decreasing the frame rate by frame skipping}
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H04N21/23439 5 {for generating different versions}
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H04N21/2347 4 involving video stream encryption
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H04N21/23473 5 {by pre-encrypting}
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H04N21/23476 5 {by partially encrypting, e.g. encrypting the ending portion of a movie}
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H04N21/235 3 Processing of additional data, e.g. scrambling of additional data or processing content descriptors
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H04N21/2351 4 {involving encryption of additional data (arrangements using cryptography for the use of broadcast information or broadcast-related information H04H60/23)}
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H04N21/2353 4 {specifically adapted to content descriptors, e.g. coding, compressing or processing of metadata}
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H04N21/2355 4 {involving reformatting operations of additional data, e.g. HTML pages (optimising the visualization of content for information retrieval from the Internet G06F16/9577; tracking of instant messages H04L51/234; media packet handling at the source H04L65/762)}
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H04N21/2356 5 {by altering the spatial resolution}
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H04N21/2358 5 {for generating different versions, e.g. for different recipient devices}
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H04N21/236 3 Assembling of a multiplex stream, e.g. transport stream, by combining a video stream with other content or additional data, e.g. inserting a URL [Uniform Resource Locator] into a video stream, multiplexing software data into a video stream; Remultiplexing of multiplex streams; Insertion of stuffing bits into the multiplex stream, e.g. to obtain a constant bit-rate; Assembling of a packetised elementary stream {(multiplexing of data packets for data networks, e.g. RTP/UDP H04L65/00)}
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H04N21/23602 4 {Multiplexing isochronously with the video sync, e.g. according to bit-parallel or bit-serial interface formats, as SDI}
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H04N21/23605 4 {Creation or processing of packetized elementary streams [PES]}
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H04N21/23608 4 {Remultiplexing multiplex streams, e.g. involving modifying time stamps or remapping the packet identifiers}
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H04N21/23611 4 {Insertion of stuffing data into a multiplex stream, e.g. to obtain a constant bitrate (synchronisation arrangements in time-division multiplex systems using bit stuffing for systems with different or fluctuating information rates H04J3/073)}
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H04N21/23614 4 {Multiplexing of additional data and video streams (arrangements for simultaneous broadcast of plural pieces of information H04H20/28)}
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H04N21/23617 5 {by inserting additional data into a data carousel, e.g. inserting software modules into a DVB carousel (arrangements for broadcast or for distribution of identical information repeatedly in broadcast distribution systems H04H20/16)}
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H04N21/2362 4 Generation or processing of Service Information [SI]
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H04N21/2365 4 Multiplexing of several video streams
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H04N21/23655 5 {Statistical multiplexing, e.g. by controlling the encoder to alter its bitrate to optimize the bandwidth utilization}
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H04N21/2368 4 Multiplexing of audio and video streams
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H04N21/237 3 Communication with additional data server
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H04N21/238 3 Interfacing the downstream path of the transmission network, e.g. adapting the transmission rate of a video stream to network bandwidth; Processing of multiplex streams {(hybrid fiber coaxial [HFC] networks for downstream channel allocation for video distribution H04L12/2801; flow control in packet networks H04L47/10; real-time communication protocols in data switching networks H04L65/00; scheduling or organising the servicing of application requests H04L67/60)}
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H04N21/23805 4 {Controlling the feeding rate to the network, e.g. by controlling the video pump}
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H04N21/2381 4 Adapting the multiplex stream to a specific network, e.g. an Internet Protocol [IP] network {(transmission of MPEG streams over ATM H04L12/5601)}
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H04N21/2383 4 Channel coding {or modulation} of digital bit-stream, e.g. QPSK modulation (arrangements for detecting or preventing errors in the information received by adapting the channel coding H04L1/0009; analogue front ends or means for connecting modulators, demodulators or transceivers to a transmission line H04L27/0002)
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H04N21/2385 4 Channel allocation (H04N21/266 takes precedence); Bandwidth allocation (H04N21/24 takes precedence {; allocation of channels according to the instantaneous demands of the users in time-division multiplex systems H04J3/1682; admission control, resource allocation in open networks H04L12/5692; arrangements for maintenance or administration in data switching networks involving bandwidth and capacity management H04L41/0896; negotiating bandwidth in wireless networks H04W28/16})
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H04N21/2387 4 Stream processing in response to a playback request from an end-user, e.g. for trick-play
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H04N21/2389 4 Multiplex stream processing, e.g. multiplex stream encrypting
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H04N21/23892 5 {involving embedding information at multiplex stream level, e.g. embedding a watermark at packet level}
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H04N21/23895 5 {involving multiplex stream encryption}
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H04N21/23897 6 {by partially encrypting, e.g. encrypting only the ending portion of a movie}
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H04N21/239 3 Interfacing the upstream path of the transmission network, e.g. prioritizing client {content} requests (hybrid fiber coaxial [HFC] networks for upstream channel allocation for video distribution H04L12/2801; flow control in data networks H04L47/10; real-time communication protocols in data switching networks H04L65/00; scheduling or organising the servicing of application requests H04L67/60)
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H04N21/2393 4 {involving handling client requests (scheduling or organising the servicing of application requests H04L67/60)}
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H04N21/2396 5 {characterized by admission policies (admission control, resource allocation in open networks H04L12/5692; arrangements for network security using user profiles for access control H04L63/102; access security in wireless networks H04W12/08)}
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H04N21/24 3 Monitoring of processes or resources, e.g. monitoring of server load, available bandwidth, upstream requests {(monitoring of server performance or load G06F11/34; arrangements for observation, testing or troubleshooting for broadcast or for distribution combined with broadcast H04H20/12)}
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H04N21/2401 4 {Monitoring of the client buffer}
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H04N21/2402 4 {Monitoring of the downstream path of the transmission network, e.g. bandwidth available (traffic monitoring in data switching networks H04L43/00; monitoring data switching networks utilization H04L43/0876)}
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H04N21/2404 4 {Monitoring of server processing errors or hardware failure (error or fault detection G06F11/07; monitoring in general G06F11/30)}
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H04N21/2405 4 {Monitoring of the internal components or processes of the server, e.g. server load (allocation of resources in multiprogramming arrangements G06F9/50; performance measurement of computer activity G06F11/34)}
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H04N21/2407 4 {Monitoring of transmitted content, e.g. distribution time, number of downloads (arrangements for monitoring programmes for broadcast or for distribution combined with broadcast H04H20/14)}
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H04N21/2408 4 {Monitoring of the upstream path of the transmission network, e.g. client requests (monitoring data switching networks utilization H04L43/0876; scheduling or organising the servicing of application requests H04L67/60)}
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H04N21/241 3 Operating system [OS] processes, e.g. server setup
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H04N21/242 3 Synchronization processes, e.g. processing of PCR [Program Clock References] {(arrangements for synchronising broadcast or distribution via plural systems in broadcast distribution systems H04H20/18)}
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H04N21/25 2 Management operations performed by the server for facilitating the content distribution or administrating data related to end-users or client devices, e.g. end-user or client device authentication, learning user preferences for recommending movies {(maintenance or administration in data networks H04L41/00)}
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H04N21/251 3 {Learning process for intelligent management, e.g. learning user preferences for recommending movies (details of learning user preferences for the retrieval of video data in a video database G06F16/739; computer systems using learning methods G06N3/08)}
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H04N21/252 4 {Processing of multiple end-users' preferences to derive collaborative data}
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H04N21/254 3 Management at additional data server, e.g. shopping server, rights management server {(arrangements for maintenance or administration in data networks H04L41/00; network services using third party service providers H04L67/53)}
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H04N21/2541 4 {Rights Management (protecting software against unauthorised usage in a vending or licensing environment G06F21/10; security in data switching network management H04L41/28; security management or policies for network security H04L63/20; access security in wireless networks H04W12/08)}
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H04N21/2542 4 {for selling goods, e.g. TV shopping (payment schemes, payment architectures or payment protocols for electronic shopping systems G06Q20/12)}
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H04N21/2543 4 Billing {, e.g. for subscription services (payment schemes, architectures or protocols G06Q20/00; e-commerce G06Q30/00; arrangements for billing for the use of broadcast information or broadcast-related information H04H60/21)}
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H04N21/25435 5 {involving characteristics of content or additional data, e.g. video resolution or the amount of advertising}
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H04N21/2547 5 Third Party Billing, e.g. billing of advertiser
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H04N21/258 3 Client or end-user data management, e.g. managing client capabilities, user preferences or demographics, processing of multiple end-users preferences to derive collaborative data {(arrangements for services using the result on the distributing side of broadcast systems H04H60/66; profiles in network data switching protocols H04L67/30)}
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H04N21/25808 4 {Management of client data (terminal profiles in network data switching protocols H04L67/303)}
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H04N21/25816 5 {involving client authentication (restricting access to computer systems by authenticating users using a predetermined code G06F21/33; cryptographic authentication protocols H04L9/32; networks authentication protocols H04L63/08; authentication in wireless network security H04W12/06)}
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H04N21/25825 5 {involving client display capabilities, e.g. screen resolution of a mobile phone (optimising the visualisation of content during browsing in the Internet G06F16/9577; processing of terminal status or physical abilities in wireless networks H04W8/22; authentication in wireless network security H04W12/06)}
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H04N21/25833 5 {involving client hardware characteristics, e.g. manufacturer, processing or storage capabilities (allocation of resources considering hardware capabilities in multiprogramming arrangements G06F9/5044; allocation of resources considering software capabilities in multiprogramming arrangements G06F9/5055)}
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H04N21/25841 5 {involving the geographical location of the client (retrieval from the Internet by querying based on geographical locations G06F16/9537; arrangements for identifying locations of receiving stations in broadcast systems H04H60/51; location of the user terminal in data switching networks H04L67/52; services making use of the location of users or terminals in wireless networks H04W4/02; locating users or terminals in wireless networks H04W64/00)}
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H04N21/2585 5 {Generation of a revocation list, e.g. of client devices involved in piracy acts}
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H04N21/25858 5 {involving client software characteristics, e.g. OS identifier}
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H04N21/25866 4 {Management of end-user data (customer care in data networks H04L41/5077)}
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H04N21/25875 5 {involving end-user authentication (restricting access to computer systems by authenticating users using a predetermined code G06F21/33; arrangements for secret or secure communication including means for verifying the identity or authority of a user of the system H04L9/32; networks authentication protocols H04L63/08; authentication in wireless network security H04W12/06)}
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H04N21/25883 5 {being end-user demographical data, e.g. age, family status or address (arrangements for identifying locations of users in broadcast systems H04H60/52)}
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H04N21/25891 5 {being end-user preferences (retrieval of video data in a video database based on user preferences G06F16/739; arrangements for recognizing users' preferences H04H60/46; user profiles in network data switching protocols H04L67/306; processing of user preferences or user profiles in wireless networks H04W8/18)}
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H04N21/262 3 Content or additional data distribution scheduling, e.g. sending additional data at off-peak times, updating software modules, calculating the carousel transmission frequency, delaying a video stream transmission, generating play-lists {(scheduling strategies for dispatcher in multiprogramming arrangements G06F9/4881; arrangements for scheduling broadcast services or broadcast-related services H04H60/06; flow control in packet networks H04L47/10; establishing a time schedule or organising the servicing of application requests H04L67/62)}
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H04N21/26208 4 {the scheduling operation being performed under constraints}
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H04N21/26216 5 {involving the channel capacity, e.g. network bandwidth (admission control, resource allocation in open networks H04L12/5692; flow control in packet networks H04L47/10; establishing a schedule or organising the servicing of application requests taking into account QoS H04L67/61)}
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H04N21/26225 5 {involving billing parameters, e.g. priority for subscribers of premium services}
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H04N21/26233 5 {involving content or additional data duration or size, e.g. length of a movie, size of an executable file}
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H04N21/26241 5 {involving the time of distribution, e.g. the best time of the day for inserting an advertisement or airing a children program}
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H04N21/2625 4 {for delaying content or additional data distribution, e.g. because of an extended sport event}
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H04N21/26258 4 {for generating a list of items to be played back in a given order, e.g. playlist, or scheduling item distribution according to such list (retrieval of multimedia data based on playlists G06F16/40)}
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H04N21/26266 4 {for determining content or additional data repetition rate, e.g. of a file in a DVB carousel according to its importance (arrangements for broadcast or for distribution of identical information repeatedly in broadcast distribution systems H04H20/16)}
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H04N21/26275 4 {for distributing content or additional data in a staggered manner, e.g. repeating movies on different channels in a time-staggered manner in a near video on demand system}
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H04N21/26283 4 {for associating distribution time parameters to content, e.g. to generate electronic program guide data}
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H04N21/26291 4 {for providing content or additional data updates, e.g. updating software modules, stored at the client (deployment, distribution, installation, update of software G06F8/65; error detection or correction during software upgrading G06F11/1433; arrangements for updating broadcast information or broadcast-related information H04H60/25)}
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H04N21/266 3 Channel or content management, e.g. generation and management of keys and entitlement messages in a conditional access system, merging a VOD unicast channel into a multicast channel
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H04N21/26603 4 {for automatically generating descriptors from content, e.g. when it is not made available by its provider, using content analysis techniques}
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H04N21/26606 4 {for generating or managing entitlement messages, e.g. Entitlement Control Message [ECM] or Entitlement Management Message [EMM] (arrangements for conditional access to broadcast information or to broadcast-related services H04H60/14)}
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H04N21/26609 5 {using retrofitting techniques, e.g. by re-encrypting the control words used for pre-encryption}
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H04N21/26613 4 {for generating or managing keys in general (key distribution for secret or secure communication involving central third party, e.g. key distribution center [KDC] or trusted third party [TTP] H04L9/083; network support of key management H04L63/06; key management for network security in communication control or processing H04W12/04)}
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H04N21/26616 4 {for merging a unicast channel into a multicast channel, e.g. in a VOD application, when a client served by unicast channel catches up a multicast channel to save bandwidth (data multicast over packet-switching network H04L12/18)}
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H04N21/2662 4 Controlling the complexity of the video stream, e.g. by scaling the resolution or bitrate of the video stream based on the client capabilities
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H04N21/2665 4 Gathering content from different sources, e.g. Internet and satellite
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H04N21/2668 4 Creating a channel for a dedicated end-user group, e.g. insertion of targeted commercials based on end-user profiles {(information retrieval from the Internet by querying with filtering and personalisation G06F16/9535; arrangements for replacing or switching information during the broadcast H04H20/10; push services over packet-switching network H04L12/1859; adaptation of message content in packet-switching networks H04L51/063)}
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H04N21/27 2 Server based end-user applications
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H04N21/274 3 Storing end-user {multimedia} data in response to end-user request {, e.g. network recorder}
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H04N21/2743 4 Video hosting of uploaded data from client
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H04N21/2747 4 Remote storage of video programs received via the downstream path, e.g. from the server
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H04N21/278 3 Content descriptor database or directory service for end-user access {(details of content or meta data based information retrieval of video data in video databases G06F16/739)}
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H04N21/40 1 Client devices specifically adapted for the reception of or interaction with content, e.g. set-top-box [STB]; Operations thereof
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H04N21/41 2 Structure of client; Structure of client peripherals
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H04N21/4104 3 {Peripherals receiving signals from specially adapted client devices}
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H04N21/4108 4 {characterised by an identification number or address, e.g. local network address (protecting specific internal or external computer components using identification number G06F21/73; network arrangements, protocols or services for addressing or naming H04L61/00)}
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H04N21/411 4 {having similar hardware or software capabilities as the client device itself, e.g. a first STB connected to a second STB}
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H04N21/4112 4 {having fewer capabilities than the client, e.g. thin client having less processing power or no tuning capabilities}
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H04N21/4113 4 {PC}
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H04N21/4117 4 {for generating hard copies of the content, e.g. printer, electronic paper (interfaces to printers G06F3/12; printing data G06K15/02)}
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H04N21/4122 4 {additional display device, e.g. video projector (digital output for controlling a plurality of local displays G06F3/1423)}
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H04N21/4126 4 {The peripheral being portable, e.g. PDAs or mobile phones}
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H04N21/41265 5 {having a remote control device for bidirectional communication between the remote control device and client device (unidirectional remote control device H04N21/42204)}
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H04N21/4131 4 {home appliance, e.g. lighting, air conditioning system, metering devices (home automation data switching networks exchanging configuration information on appliance services H04L12/2807)}
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H04N21/4135 4 {external recorder (interface circuits between an apparatus for recording television signals and a television receiver H04N5/775)}
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H04N21/414 3 Specialised client platforms, e.g. receiver in car or embedded in a mobile appliance
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H04N21/41407 4 {embedded in a portable device, e.g. video client on a mobile phone, PDA, laptop (constructional details of equipment or arrangements specially adapted for portable computer application G06F1/1626; arrangements specially adapted for mobile receivers in broadcast systems H04H20/57)}
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H04N21/41415 4 {involving a public display, viewable by several users in a public space outside their home, e.g. movie theatre, information kiosk}
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H04N21/41422 4 {located in transportation means, e.g. personal vehicle (arrangements specially adapted for transportation systems in broadcast systems H04H20/62)}
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H04N21/4143 4 {embedded in a} Personal Computer [PC]
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H04N21/4147 4 PVR [Personal Video Recorder] (H04N5/76 takes precedence {; arrangements for broadcast with accumulation-type receivers H04H20/40})
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H04N21/418 3 External card to be used in combination with the client device, e.g. for conditional access
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H04N21/4181 4 {for conditional access}
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H04N21/4182 4 {for identification purposes, e.g. storing user identification data, preferences, personal settings or data (restricting access to computer systems by authenticating users using a predetermined code in combination with an additional device, e.g. dongle or smart card G06F21/123)}
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H04N21/4183 4 {providing its own processing capabilities, e.g. external module for video decoding}
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H04N21/4184 4 {providing storage capabilities, e.g. memory stick}
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H04N21/4185 4 for payment
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H04N21/422 3 Input-only peripherals {, i.e. input devices connected to specially adapted client devices}, e.g. global positioning system [GPS] {(input devices also receiving signals from specially adapted client devices H04N21/4104)}
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H04N21/42201 4 {biosensors, e.g. heat sensor for presence detection, EEG sensors or any limb activity sensors worn by the user (input arrangements for interaction with the human body based on nervous system activity detection G06F3/015)}
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H04N21/42202 4 {environmental sensors, e.g. for detecting temperature, luminosity, pressure, earthquakes}
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H04N21/42203 4 {sound input device, e.g. microphone}
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H04N21/42204 4 {User interfaces specially adapted for controlling a client device through a remote control device; Remote control devices therefor (constructive details of casings for the remote control device H01H9/0235; user interfaces for controlling a tuning device of a television receiver through a remote control H03J9/00; remote control of peripheral devices connected to a television receiver through the remote control device of the television receiver H04B1/205)}
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H04N21/42206 5 {characterized by hardware details}
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H04N21/42208 6 {Display device provided on the remote control}
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H04N21/42209 7 {for displaying non-command information, e.g. electronic program guide [EPG], e-mail, messages or a second television channel}
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H04N21/4221 6 {Dedicated function buttons, e.g. for the control of an EPG, subtitles, aspect ratio, picture-in-picture or teletext}
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H04N21/42212 6 {Specific keyboard arrangements}
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H04N21/42213 7 {for facilitating data entry}
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H04N21/42214 8 {using alphanumerical characters}
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H04N21/42215 8 {by measuring the time interval during which a key is pressed, e.g. for inputting sequences of digits when selecting a television channel}
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H04N21/42216 8 {for quick navigation, e.g. through an EPG}
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H04N21/42218 7 {for mapping a matrix of displayed objects on the screen to the numerical key-matrix of the remote control}
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H04N21/4222 6 {Remote control device emulator integrated into a non-television apparatus, e.g. a PDA, media center or smart toy (remote control device for a television receiver integrated into a mobile phone H04M1/72415)}
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H04N21/42221 6 {Transmission circuitry, e.g. infrared [IR] or radio frequency [RF]}
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H04N21/42222 6 {Additional components integrated in the remote control device, e.g. timer, speaker, sensors for detecting position, direction or movement of the remote control, microphone or battery charging device}
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H04N21/42224 6 {Touch pad or touch panel provided on the remote control}
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H04N21/42225 6 {characterized by types of remote control, e.g. universal remote control}
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H04N21/42226 5 {Reprogrammable remote control devices}
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H04N21/42227 6 {the keys being reprogrammable, e.g. soft keys}
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H04N21/42228 7 {the reprogrammable keys being displayed on a display screen in order to reduce the number of keys on the remote control device itself}
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H04N21/4223 4 Cameras (H04N23/00 takes precedence)
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H04N21/4227 4 {Providing} Remote input by a user located remotely from the client device, e.g. at work
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H04N21/426 3 Internal components of the client {; Characteristics thereof} (H04N5/44 takes precedence)
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H04N21/42607 4 {for processing the incoming bitstream}
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H04N21/42615 5 {involving specific demultiplexing arrangements}
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H04N21/42623 5 {involving specific decryption arrangements}
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H04N21/4263 5 {involving specific tuning arrangements, e.g. two tuners}
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H04N21/42638 6 {involving a hybrid front-end, e.g. analog and digital tuners}
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H04N21/42646 4 {for reading from or writing on a non-volatile solid state storage medium, e.g. DVD, CD-ROM}
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H04N21/42653 4 {for processing graphics}
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H04N21/42661 4 {for reading from or writing on a magnetic storage medium, e.g. hard disk drive}
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H04N21/42669 5 {the medium being removable}
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H04N21/42676 4 {for modulating an analogue carrier signal to encode digital information or demodulating it to decode digital information, e.g. ADSL or cable modem}
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H04N21/42684 4 {Client identification by a unique number or address, e.g. serial number, MAC address, socket ID (network arrangements, protocols or services for addressing or naming H04L61/00)}
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H04N21/42692 4 {for reading from or writing on a volatile storage medium, e.g. Random Access Memory [RAM]}
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H04N21/43 2 Processing of content or additional data, e.g. demultiplexing additional data from a digital video stream; Elementary client operations, e.g. monitoring of home network or synchronising decoder's clock; Client middleware {(real-time communication protocols in data switching networks H04L65/00)}
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H04N21/4302 3 {Content synchronisation processes, e.g. decoder synchronisation}
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H04N21/4305 4 {Synchronising client clock from received content stream, e.g. locking decoder clock with encoder clock, extraction of the PCR packets (arrangements for synchronising receiver with transmitter by comparing receiver clock with transmitter clock H04L7/0012; arrangements for synchronising receiver with transmitter wherein the receiver takes measures against momentary loss of synchronisation H04L7/0083)}
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H04N21/4307 4 {Synchronising the rendering of multiple content streams or additional data on devices, e.g. synchronisation of audio on a mobile phone with the video output on the TV screen}
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H04N21/43072 5 {of multiple content streams on the same device}
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H04N21/43074 5 {of additional data with content streams on the same device, e.g. of EPG data or interactive icon with a TV program}
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H04N21/43076 5 {of the same content streams on multiple devices, e.g. when family members are watching the same movie on different devices}
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H04N21/43078 5 {for seamlessly watching content streams when changing device, e.g. when watching the same program sequentially on a TV and then on a tablet}
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H04N21/43079 5 {of additional data with content streams on multiple devices}
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H04N21/431 3 Generation of visual interfaces {for content selection or interaction}; Content or additional data rendering
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H04N21/4312 4 {involving specific graphical features, e.g. screen layout, special fonts or colors, blinking icons, highlights or animations}
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H04N21/4314 5 {for fitting data in a restricted space on the screen, e.g. EPG data in a rectangular grid}
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H04N21/4316 5 {for displaying supplemental content in a region of the screen, e.g. an advertisement in a separate window}
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H04N21/4318 4 {by altering the content in the rendering process, e.g. blanking, blurring or masking an image region (image enhancement or restoration in general G06T5/00)}
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H04N21/432 3 Content retrieval operation from a local storage medium, e.g. hard-disk {(details of retrieval of video data and associated meta data in video databases G06F16/739)}
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H04N21/4325 4 {by playing back content from the storage medium (reproduction of recorded television signals H04N5/76; reproduction of recorded television signals H04N9/79)}
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H04N21/433 3 Content storage operation, e.g. storage operation in response to a pause request, caching operations
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H04N21/4331 4 {Caching operations, e.g. of an advertisement for later insertion during playback}
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H04N21/4332 4 {by placing content in organized collections, e.g. local EPG data repository (interfaces, Database management systems or updating for information retrieval G06F16/23; details of retrieval of video data and associated meta data in video database G06F16/739)}
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H04N21/4333 4 {Processing operations in response to a pause request}
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H04N21/4334 4 {Recording operations (recording of a television signal H04N5/76; arrangements for recording or accumulating broadcast information or broadcast-related information H04H60/27)}
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H04N21/4335 4 Housekeeping operations, e.g. prioritizing content for deletion because of storage space restrictions {(storage management, e.g. defragmentation G06F3/0604; unloading stored programs G06F9/445; storage management in file systems G06F16/10; buffering arrangements in a network node or in an end terminal in packet networks H04L49/90)}
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H04N21/434 3 Disassembling of a multiplex stream, e.g. demultiplexing audio and video streams, extraction of additional data from a video stream; Remultiplexing of multiplex streams; Extraction or processing of SI; Disassembling of packetised elementary stream {(demultiplexing of data packets for data networks, e.g. RTP/UDP H04L65/00)}
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H04N21/4341 4 {Demultiplexing of audio and video streams}
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H04N21/4342 4 {Demultiplexing isochronously with video sync, e.g. according to bit-parallel or bit-serial interface formats, as SDI}
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H04N21/4343 4 {Extraction or processing of packetized elementary streams [PES]}
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H04N21/4344 4 {Remultiplexing of multiplex streams, e.g. by modifying time stamps or remapping the packet identifiers}
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H04N21/4345 4 {Extraction or processing of SI, e.g. extracting service information from an MPEG stream}
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H04N21/4346 4 {involving stuffing data, e.g. packets or bytes (synchronisation arrangements in time-division multiplex systems with different or fluctuating information rates H04J3/073)}
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H04N21/4347 4 {Demultiplexing of several video streams}
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H04N21/4348 4 {Demultiplexing of additional data and video streams}
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H04N21/4349 5 {by extracting from data carousels, e.g. extraction of software modules from a DVB carousel}
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H04N21/435 3 Processing of additional data, e.g. decrypting of additional data, reconstructing software from modules extracted from the transport stream
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H04N21/4351 4 {involving reassembling additional data, e.g. rebuilding an executable program from recovered modules}
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H04N21/4353 4 {involving decryption of additional data (arrangements using cryptography for the use of broadcast information or broadcast-related information H04H60/23)}
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H04N21/4355 4 {involving reformatting operations of additional data, e.g. HTML pages on a television screen (optimising the visualization of content for information retrieval from the Internet G06F16/9577; adaptation of message content in packet-switching networks H04L51/066; media handling at the source in data packet switching networks H04L65/764)}
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H04N21/4356 5 {by altering the spatial resolution, e.g. to reformat additional data on a handheld device, attached to the STB}
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H04N21/4358 5 {for generating different versions, e.g. for different peripheral devices}
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H04N21/436 3 Interfacing a local distribution network, e.g. communicating with another STB {or one or more peripheral devices} inside the home
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H04N21/43607 4 {Interfacing a plurality of external cards, e.g. through a DVB Common Interface [DVB-CI]}
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H04N21/43615 4 {Interfacing a Home Network, e.g. for connecting the client to a plurality of peripherals (home Audio Video Interoperability [HAVI] data switching networks H04L12/2805)}
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H04N21/43622 4 {Interfacing an external recording device}
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H04N21/4363 4 Adapting the video {or multiplex} stream to a specific local network, e.g. a IEEE 1394 or Bluetooth® network
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H04N21/43632 5 {involving a wired protocol, e.g. IEEE 1394 (high-speed IEEE 1394 serial bus H04L12/40052)}
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H04N21/43635 6 {HDMI}
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H04N21/43637 5 {involving a wireless protocol, e.g. Bluetooth, RF or wireless LAN [IEEE 802.11] (arrangements for wireless networking or broadcasting of information in indoor or near-field type systems H04B10/114)}
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H04N21/4367 4 Establishing a secure communication between the client and a peripheral device or smart card
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H04N21/437 3 Interfacing the upstream path of the transmission network, e.g. for transmitting client requests to a VOD server {(flow control in data networks H04L47/10; streaming protocols, e.g. RTP or RTCP, H04L65/65; scheduling or organising the servicing of application requests in data packet switching networks H04L67/60)}
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H04N21/438 3 Interfacing the downstream path of the transmission network originating from a server, e.g. retrieving MPEG packets from an IP network {(transmission of MPEG streams over ATM H04L12/5601; flow control in data networks H04L47/10; real-time communication protocols in data switching networks H04L65/00)}
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H04N21/4381 4 {Recovering the multiplex stream from a specific network, e.g. recovering MPEG packets from ATM cells (transmission of MPEG streams over ATM H04L12/5601)}
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H04N21/4382 4 {Demodulation or channel decoding, e.g. QPSK demodulation (analog front ends or means for connecting modulators, demodulators or transceivers to a transmission line H04L27/0002)}
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H04N21/4383 4 {Accessing a communication channel}
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H04N21/4384 5 {involving operations to reduce the access time, e.g. fast-tuning for reducing channel switching latency}
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H04N21/4385 4 Multiplex stream processing, e.g. multiplex stream decrypting
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H04N21/43853 5 {involving multiplex stream decryption (arrangements using cryptography for the use of broadcast information or broadcast-related information H04H60/23)}
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H04N21/43856 6 {by partial decryption, e.g. decrypting a multiplex stream that has been partially encrypted}
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H04N21/439 3 Processing of audio elementary streams
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H04N21/4392 4 {involving audio buffer management}
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H04N21/4394 4 {involving operations for analysing the audio stream, e.g. detecting features or characteristics in audio streams (arrangements characterised by components specially adapted for monitoring, identification or recognition of audio in broadcast systems H04H60/58)}
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H04N21/4396 4 {by muting the audio signal}
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H04N21/4398 4 {involving reformatting operations of audio signals (details of audio signal transcoding G10L19/173)}
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H04N21/44 3 Processing of video elementary streams, e.g. splicing a video clip retrieved from local storage with an incoming video stream, rendering scenes according to MPEG-4 scene graphs
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H04N21/44004 4 {involving video buffer management, e.g. video decoder buffer or video display buffer}
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H04N21/44008 4 {involving operations for analysing video streams, e.g. detecting features or characteristics in the video stream (arrangements characterised by components specially adapted for monitoring, identification or recognition of video in broadcast systems H04H60/59)}
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H04N21/44012 4 {involving rendering scenes according to scene graphs, e.g. MPEG-4 scene graphs}
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H04N21/44016 4 {involving splicing one content stream with another content stream, e.g. for substituting a video clip}
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H04N21/4402 4 involving reformatting operations of video signals for household redistribution, storage or real-time display {(details of conversion of video standards at pixel level H04N7/01; video transcoding H04N19/40; adapting incoming signals to the display format of the display terminal G09G5/005; media handling at the source in data packet switching networks H04L65/764)}
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H04N21/440209 5 {for formatting on an optical medium, e.g. DVD}
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H04N21/440218 5 {by transcoding between formats or standards, e.g. from MPEG-2 to MPEG-4 (conversion of standards in analogue television systems H04N7/01)}
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H04N21/440227 5 {by decomposing into layers, e.g. base layer and one or more enhancement layers}
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H04N21/440236 5 {by media transcoding, e.g. video is transformed into a slideshow of still pictures, audio is converted into text}
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H04N21/440245 5 {the reformatting operation being performed only on part of the stream, e.g. a region of the image or a time segment}
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H04N21/440254 5 {by altering signal-to-noise parameters, e.g. requantization}
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H04N21/440263 5 {by altering the spatial resolution, e.g. for displaying on a connected PDA}
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H04N21/440272 6 {for performing aspect ratio conversion}
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H04N21/440281 5 {by altering the temporal resolution, e.g. by frame skipping (television signal recording using magnetic recording on tape for reproducing at a rate different from the recording rate H04N5/783)}
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H04N21/44029 5 {for generating different versions}
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H04N21/4405 4 involving video stream decryption
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H04N21/44055 5 {by partially decrypting, e.g. decrypting a video stream that has been partially encrypted}
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H04N21/4408 4 involving video stream encryption, e.g. re-encrypting a decrypted video stream for redistribution in a home network
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H04N21/441 3 Acquiring end-user identification {, e.g. using personal code sent by the remote control or by inserting a card}
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H04N21/4415 4 using biometric characteristics of the user, e.g. by voice recognition or fingerprint scanning {(cryptography using biological data H04L9/3231; authentication in networks using biometric H04L63/0861)}
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H04N21/442 3 Monitoring of processes or resources, e.g. detecting the failure of a recording device, monitoring the downstream bandwidth, the number of times a movie has been viewed, the storage space available from the internal hard disk {(arrangements for monitoring broadcast services or broadcast-related services H04H60/29; arrangements for identifying or recognising characteristics with a direct linkage to broadcast information H04H60/35; monitoring of user activities for profile generation for accessing a video database G06F16/739; monitoring in wireless networks H04W24/00)}
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H04N21/44204 4 {Monitoring of content usage, e.g. the number of times a movie has been viewed, copied or the amount which has been watched (monitoring of user activities for profile generation for accessing a video database G06F16/739; protecting generic digital content where the protection is independent of the precise nature of the content G06F21/10; arrangements for monitoring the use made of the broadcast services in broadcast systems H04H60/31)}
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H04N21/44209 4 {Monitoring of downstream path of the transmission network originating from a server, e.g. bandwidth variations of a wireless network (arrangements for maintenance or administration in data switching networks involving bandwidth and capacity management H04L41/0896)}
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H04N21/44213 4 {Monitoring of end-user related data (arrangements for monitoring the users' behaviour or opinions in broadcast systems H04H60/33)}
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H04N21/44218 5 {Detecting physical presence or behaviour of the user, e.g. using sensors to detect if the user is leaving the room or changes his face expression during a TV program (methods or arrangements for recognising human body or animal bodies or body parts G06V40/10; methods or arrangements for acquiring or recognising human faces, facial parts, facial sketches, facial expressions G06V40/16; methods or arrangements for recognising movements or behaviour G06V40/20; arrangements for identifying users in broadcast systems H04H60/45)}
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H04N21/44222 5 {Analytics of user selections, e.g. selection of programs or purchase activity (monitoring of user selections in data processing systems G06F11/34; arrangements for monitoring the user's behaviour or opinions in broadcast systems H04H60/33)}
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H04N21/44224 6 {Monitoring of user activity on external systems, e.g. Internet browsing}
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H04N21/44226 7 {on social networks}
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H04N21/44227 4 {Monitoring of local network, e.g. connection or bandwidth variations; Detecting new devices in the local network (configuring of peripheral devices in general G06F9/4411; monitoring connectivity in data switched networks H04L43/0811)}
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H04N21/44231 4 {Monitoring of peripheral device or external card, e.g. to detect processing problems in a handheld device or the failure of an external recording device (configuring of peripheral devices in general G06F9/4411; reporting information sensed by appliance or service execution status of appliance services in a home automation network H04L12/2823; monitoring the status of connected device in data switched networks H04L43/0817)}
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H04N21/44236 4 {Monitoring of piracy processes or activities (protecting computer platforms against harmful, malicious or unexpected behaviour or activities using intrusion detection and counter measures G06F21/566; computer virus detection and handling G06F21/56)}
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H04N21/4424 4 {Monitoring of the internal components or processes of the client device, e.g. CPU or memory load, processing speed, timer, counter or percentage of the hard disk space used (error monitoring in general G06F11/30; arrangements for monitoring conditions of receiving stations in broadcast systems H04H60/32; diagnosis, testing or measuring for television receivers H04N17/04)}
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H04N21/44245 4 {Monitoring the upstream path of the transmission network, e.g. its availability, bandwidth}
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H04N21/4425 4 Monitoring of client processing errors or hardware failure
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H04N21/443 3 OS processes, e.g. booting an STB, implementing a Java virtual machine in an STB or power management in an STB
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H04N21/4431 4 {characterized by the use of Application Program Interface [API] libraries}
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H04N21/4432 4 {Powering on the client, e.g. bootstrap loading using setup parameters being stored locally or received from the server (resetting in general G06F1/14; program loading or initiating in general G06F9/445; bootstrapping in general G06F9/4401; secure boots of computer platforms G06F21/57)}
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H04N21/4433 4 {Implementing client middleware, e.g. Multimedia Home Platform [MHP]}
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H04N21/4435 4 {Memory management (allocation of memory to service a request G06F9/5016; addressing or allocating within memory systems or architectures G06F12/02)}
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H04N21/4436 4 {Power management, e.g. shutting down unused components of the receiver (power management in computer systems G06F1/3203; hibernate or awake process in computer systems G06F9/4418)}
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H04N21/4437 4 {Implementing a Virtual Machine [VM] (virtual machines in general G06F9/45533)}
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H04N21/4438 4 {Window management, e.g. event handling following interaction with the user interface}
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H04N21/45 2 Management operations performed by the client for facilitating the reception of or the interaction with the content or administrating data related to the end-user or to the client device itself, e.g. learning user preferences for recommending movies, resolving scheduling conflicts
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H04N21/4508 3 {Management of client data or end-user data}
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H04N21/4516 4 {involving client characteristics, e.g. Set-Top-Box type, software version or amount of memory available}
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H04N21/4518 4 {involving characteristics of one or more peripherals, e.g. peripheral type, software version, amount of memory available or display capabilities}
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H04N21/4524 4 {involving the geographical location of the client (retrieval from the Internet by querying based on geographical locations G06F16/9537; systems specially adapted for using geographical information in broadcast systems H04H60/70; protocols in which the network application is adapted for the location of the user terminal in communication control or processing H04L67/52; services making use of the location of users or terminals in wireless networks H04W4/02; locating users or terminals in wireless networks H04W64/00)}
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H04N21/4532 4 {involving end-user characteristics, e.g. viewer profile, preferences (monitoring of user activities for profile generation for accessing a video database G06F16/739; user profiles in network data switching protocols H04L67/306; processing of user preferences or user profiles in wireless networks H04W8/18)}
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H04N21/454 3 Content {or additional data} filtering, e.g. blocking advertisements
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H04N21/4542 4 {Blocking scenes or portions of the received content, e.g. censoring scenes}
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H04N21/4545 4 Input to filtering algorithms, e.g. filtering a region of the image
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H04N21/45452 5 {applied to an object-based stream, e.g. MPEG-4 streams}
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H04N21/45455 5 {applied to a region of the image}
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H04N21/45457 5 {applied to a time segment}
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H04N21/458 3 Scheduling content for creating a personalised stream, e.g. by combining a locally stored advertisement with an incoming stream; Updating operations, e.g. for OS modules {; time-related management operations (arrangements for replacing or switching information during the broadcast or during the distribution H04H20/10)}
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H04N21/4583 4 {Automatically resolving scheduling conflicts, e.g. when a recording by reservation has been programmed for two programs in the same time slot}
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H04N21/4586 4 {Content update operation triggered locally, e.g. by comparing the version of software modules in a DVB carousel to the version stored locally (deployment, distribution, installation, update of software G06F8/65; error detection or correction of the data by redundancy during software upgrading G06F11/1433; arrangements for updating broadcast information or broadcast-related information H04H60/25)}
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H04N21/462 3 Content or additional data management, e.g. creating a master electronic program guide from data received from the Internet and a Head-end, controlling the complexity of a video stream by scaling the resolution or bit-rate based on the client capabilities
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H04N21/4621 4 {Controlling the complexity of the content stream or additional data, e.g. lowering the resolution or bit-rate of the video stream for a mobile client with a small screen (arrangements for using the results of monitoring on user's side in broadcast systems H04H60/65; flow control in packet networks H04L47/10)}
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H04N21/4622 4 {Retrieving content or additional data from different sources, e.g. from a broadcast channel and the Internet (web site content organization and management for information retrieval from the Internet G06F16/958; transmission by internet of broadcast information H04H60/82; stock exchange data over packet-switching network H04L12/1804; push services including data channel over packet-switching network H04L12/1859)}
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H04N21/4623 4 Processing of entitlement messages, e.g. ECM [Entitlement Control Message] or EMM [Entitlement Management Message] {(arrangements for conditional access to broadcast information or to broadcast-related services H04H60/14)}
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H04N21/4627 4 Rights management {associated to the content (security in data switching network management H04L41/28; security management or policies for network security H04L63/20; access security in wireless networks H04W12/08)}
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H04N21/466 3 Learning process for intelligent management, e.g. learning user preferences for recommending movies {(services using the results of monitoring in broadcast systems H04H60/61)}
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H04N21/4661 4 {Deriving a combined profile for a plurality of end-users of the same client, e.g. for family members within a home (user profiles in network data switching protocols H04L67/306)}
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H04N21/4662 4 {characterized by learning algorithms}
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H04N21/4663 5 {involving probabilistic networks, e.g. Bayesian networks}
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H04N21/4665 5 {involving classification methods, e.g. Decision trees}
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H04N21/4666 5 {using neural networks, e.g. processing the feedback provided by the user}
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H04N21/4667 4 {Processing of monitored end-user data, e.g. trend analysis based on the log file of viewer selections}
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H04N21/4668 4 {for recommending content, e.g. movies}
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H04N21/47 2 End-user applications
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H04N21/472 3 End-user interface for requesting content, additional data or services; End-user interface for interacting with content, e.g. for content reservation or setting reminders, for requesting event notification, for manipulating displayed content {(end-user interfaces for retrieving video data from a database G06F16/739; network services for supporting unicast streaming H04L65/612)}
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H04N21/47202 4 {for requesting content on demand, e.g. video on demand}
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H04N21/47205 4 {for manipulating displayed content, e.g. interacting with MPEG-4 objects, editing locally}
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H04N21/47208 4 {for requesting near-video-on-demand content}
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H04N21/47211 4 {for requesting pay-per-view content (payment schemes payment architectures or payment protocols G06Q20/00, G07F)}
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H04N21/47214 4 {for content reservation or setting reminders; for requesting event notification, e.g. of sport results or stock market (stock exchange data over packet-switching network H04L12/1804; push services over packet-switching network H04L12/1859; notification of incoming messages in packet switching networks H04L51/224)}
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H04N21/47217 4 {for controlling playback functions for recorded or on-demand content, e.g. using progress bars, mode or play-point indicators or bookmarks (specific graphical features in visual interfaces H04N21/4312)}
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H04N21/4722 4 for requesting additional data associated with the content
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H04N21/4725 5 using interactive regions of the image, e.g. hot spots {(details of information retrieval from the Internet by using URLs G06F16/955; processing chained hypermedia data for information retrieval G06F16/94)}
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H04N21/4728 4 for selecting a Region Of Interest [ROI], e.g. for requesting a higher resolution version of a selected region
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H04N21/475 3 End-user interface for inputting end-user data, e.g. personal identification number [PIN], preference data
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H04N21/4751 4 {for defining user accounts, e.g. accounts for children}
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H04N21/4753 4 {for user identification, e.g. by entering a PIN or password (cryptographic authentication protocols H04L9/32; networks authentication protocols H04L63/08)}
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H04N21/4755 4 {for defining user preferences, e.g. favourite actors or genre (retrieval personalisation and generation of user profiles for the retrieval of video data G06F16/739; user profiles in network data switching protocols H04L67/306)}
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H04N21/4756 4 {for rating content, e.g. scoring a recommended movie}
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H04N21/4758 4 {for providing answers, e.g. voting}
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H04N21/478 3 Supplemental services, e.g. displaying phone caller identification, shopping application
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H04N21/47805 4 {Electronic banking (banking in general G06Q30/02)}
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H04N21/4781 4 {Games}
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H04N21/47815 4 {Electronic shopping (payment schemes, payment architectures or payment protocols for electronic shopping systems G06Q20/12)}
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H04N21/4782 4 Web browsing {, e.g. WebTV}
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H04N21/4784 4 receiving rewards
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H04N21/4786 4 e-mailing {(message switching systems, e.g. electronic mail systems H04L51/00)}
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H04N21/4788 4 communicating with other users, e.g. chatting {(arrangements for providing for computer conferences, e.g. chat rooms, to substation in data switching networks H04L12/1813; distributed application using peer-to-peer [P2P] networks H04L67/104)}
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H04N21/482 3 End-user interface for program selection {(broadcast systems using EPGs H04H60/72)}
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H04N21/4821 4 {using a grid, e.g. sorted out by channel and broadcast time}
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H04N21/4823 4 {using a channel name}
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H04N21/4825 4 {using a list of items to be played back in a given order, e.g. playlists}
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H04N21/4826 4 {using recommendation lists, e.g. of programs or channels sorted out according to their score}
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H04N21/4828 4 {for searching program descriptors (retrieval of video data G06F16/739)}
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H04N21/485 3 End-user interface for client configuration
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H04N21/4852 4 {for modifying audio parameters, e.g. switching between mono and stereo}
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H04N21/4854 4 {for modifying image parameters, e.g. image brightness, contrast}
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H04N21/4856 4 {for language selection, e.g. for the menu or subtitles}
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H04N21/4858 4 {for modifying screen layout parameters, e.g. fonts, size of the windows}
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H04N21/488 3 Data services, e.g. news ticker {(systems specially adapted for using meteorological information in broadcast systems H04H60/71)}
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H04N21/4882 4 {for displaying messages, e.g. warnings, reminders (arrangements for providing short real-time information to substation in data switching networks H04L12/1895)}
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H04N21/4884 4 {for displaying subtitles}
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H04N21/4886 4 {for displaying a ticker, e.g. scrolling banner for news, stock exchange, weather data}
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H04N21/4888 4 {for displaying teletext characters}
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H04N21/60 1 Network structure or processes for video distribution between server and client or between remote clients; Control signalling between clients, server and network components; Transmission of management data between server and client {, e.g. sending from server to client commands for recording incoming content stream}; Communication details between server and client
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H04N21/61 2 Network physical structure; Signal processing (H04B takes precedence)
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H04N21/6106 3 {specially adapted to the downstream path of the transmission network}
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H04N21/6112 4 {involving terrestrial transmission, e.g. DVB-T}
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H04N21/6118 4 {involving cable transmission, e.g. using a cable modem}
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H04N21/6125 4 {involving transmission via Internet (transmission by internet of broadcast information H04H60/82)}
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H04N21/6131 4 {involving transmission via a mobile phone network (wireless downlink channel access H04W74/006)}
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H04N21/6137 4 {involving transmission via a telephone network, e.g. POTS}
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H04N21/6143 4 {involving transmission via a satellite}
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H04N21/615 3 {Signal processing at physical level (signal processing in analog two-way television systems H04N7/173)}
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H04N21/6156 3 {specially adapted to the upstream path of the transmission network}
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H04N21/6162 4 {involving terrestrial transmission, e.g. DVB-T}
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H04N21/6168 4 {involving cable transmission, e.g. using a cable modem}
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H04N21/6175 4 {involving transmission via Internet (broadcast-related systems characterised by the transmission system being the Internet H04H60/82)}
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H04N21/6181 4 {involving transmission via a mobile phone network (arrangements for providing broadcast or conference services to substation in data switching networks in combination with wireless systems H04L12/189; wireless uplink channel access H04W74/004)}
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H04N21/6187 4 {involving transmission via a telephone network, e.g. POTS}
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H04N21/6193 4 {involving transmission via a satellite (arrangements for data linking, networking or transporting, or for controlling an end to end session in a satellite broadcast system H04B7/18526)}
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H04N21/63 2 Control signaling {related to video distribution} between client, server and network components; Network processes for video distribution between server and clients {or between remote clients}, e.g. transmitting basic layer and enhancement layers over different transmission paths, setting up a peer-to-peer communication via Internet between remote STB's; Communication protocols; Addressing (real-time session protocols H04L65/1101; distributed application using peer-to-peer [P2P] networks H04L67/104)
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H04N21/631 3 {Multimode Transmission, e.g. transmitting basic layers and enhancement layers of the content over different transmission paths or transmitting with different error corrections, different keys or with different transmission protocols}
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H04N21/632 3 {using a connection between clients on a wide area network, e.g. setting up a peer-to-peer communication via Internet for retrieving video segments from the hard-disk of other client devices (broadcast-related systems characterised by transmission among terminal devices H04H60/80; distributed application using peer-to-peer [P2P] networks H04L67/104)}
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H04N21/633 3 Control signals issued by server directed to the network components or client {(management of faults, events, alarms in data networks H04L41/06)}
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H04N21/6332 4 directed to client
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H04N21/6334 5 for authorisation, e.g. by transmitting a key {(wireless communications network key management H04W12/04; wireless communications network access security H04W12/08)}
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H04N21/63345 6 {by transmitting keys (key distribution for secret or secure communication H04L9/08; network support of key management H04L63/06)}
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H04N21/6336 5 directed to decoder
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H04N21/6338 4 directed to network
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H04N21/637 3 Control signals issued by the client directed to the server or network components
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H04N21/6371 4 directed to network
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H04N21/6373 4 for rate control {, e.g. request to the server to modify its transmission rate (flow control in packet networks H04L47/10)}
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H04N21/6375 4 for requesting retransmission {, e.g. of data packets lost or corrupted during transmission from server}(ARQ protocols H04L1/18; implementation or adaptation of Internet protocol [IP], of transmission control protocol [TCP] or of user datagram protocol [UDP] H04L69/16)
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H04N21/6377 4 directed to server {(one-way streaming services wherein the source is controlled by the destination H04L65/613)}
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H04N21/63775 5 {for uploading keys, e.g. for a client to communicate its public key to the server (key management H04L9/08; network support of key management H04L63/06)}
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H04N21/6379 5 directed to encoder {, e.g. for requesting a lower encoding rate}
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H04N21/64 3 Addressing {(network arrangements, protocols or services for addressing or naming H04L61/00; support for multicast or broadcast of one-way stream services H04L65/611)}
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H04N21/6402 4 Address allocation for clients {(address allocation in data networks H04L61/50)}
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H04N21/6405 4 Multicasting {(data broadcast and multicast in packet switching networks H04L12/18)}
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H04N21/6408 4 Unicasting
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H04N21/643 3 Communication protocols {(network streaming protocols, e.g. real-time transport protocol [RTP] or real-time control protocol [RTCP], H04L65/65)}
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H04N21/64307 4 {ATM}
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H04N21/64315 4 {DVB-H}
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H04N21/64322 4 {IP}
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H04N21/6433 4 Digital Storage Media - Command and Control Protocol [DSM-CC]
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H04N21/6437 4 Real-time Transport Protocol [RTP]
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H04N21/647 3 Control signaling between network components and server or clients; Network processes for video distribution between server and clients, e.g. controlling the quality of the video stream, by dropping packets, protecting content from unauthorised alteration within the network, monitoring of network load, bridging between two different networks, e.g. between IP and wireless {(real-time session protocols H04L65/1101)}
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H04N21/64707 4 {for transferring content from a first network to a second network, e.g. between IP and wireless}
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H04N21/64715 4 {Protecting content from unauthorized alteration within the network (verifying the information received for network security in communication control or processing H04L63/12; integrity in wireless network security H04W12/10)}
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H04N21/64723 4 {Monitoring of network processes or resources, e.g. monitoring of network load (traffic related reporting in data switching networks H04L43/062)}
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H04N21/6473 5 {Monitoring network processes errors (for recovering from a failure of a protocol instance or entity H04L69/40)}
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H04N21/64738 5 {Monitoring network characteristics, e.g. bandwidth, congestion level (data switched network analysis H04L41/14; monitoring functioning in data switched networks H04L43/0817; flow control in packet networks H04L47/10)}
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H04N21/64746 4 {Control signals issued by the network directed to the server or the client}
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H04N21/64753 5 {directed to the client}
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H04N21/64761 5 {directed to the server}
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H04N21/64769 6 {for rate control (flow control in packet networks H04L47/10)}
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H04N21/64776 6 {for requesting retransmission, e.g. of data packets lost or corrupted during transmission from server (ARQ protocols H04L1/18; implementation or adaptation of Internet protocol [IP], of transmission control protocol [TCP] or of user datagram protocol [UDP] H04L69/16)}
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H04N21/64784 4 {Data processing by the network (data processing in packet switching systems H04L12/56; flow control in packet networks H04L47/10; intermediate storage or scheduling H04L49/90; provisioning of proxy services in data packet switching networks H04L67/56)}
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H04N21/64792 5 {Controlling the complexity of the content stream, e.g. by dropping packets (intermediate media network packet handling H04L65/765; proxy provisioning conversion or adaptation for reducing the amount or size of exchanged application data H04L67/5651; negotiation of resources in wireless networks H04W28/16)}
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H04N21/65 2 Transmission of management data between client and server
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H04N21/654 3 Transmission by server directed to the client
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H04N21/6543 4 for forcing some client operations, e.g. recording {(remote booting in general G06F9/4416)}
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H04N21/6547 4 comprising parameters, e.g. for client setup
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H04N21/658 3 Transmission by the client directed to the server
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H04N21/6581 4 {Reference data, e.g. a movie identifier for ordering a movie or a product identifier in a home shopping application}
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H04N21/6582 4 {Data stored in the client, e.g. viewing habits, hardware capabilities, credit card number (arrangements where receivers interact with the broadcast H04H20/38)}
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H04N21/6583 4 Acknowledgement
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H04N21/6587 4 Control parameters, e.g. trick play commands, viewpoint selection
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H04N21/80 1 Generation or processing of content or additional data by content creator independently of the distribution process; Content per se {(arrangements for generating broadcast information H04H60/02)}
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H04N21/81 2 Monomedia components thereof
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H04N21/8106 3 {involving special audio data, e.g. different tracks for different languages}
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H04N21/8113 4 {comprising music, e.g. song in MP3 format}
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H04N21/812 3 {involving advertisement data (advertising per se G06Q30/02)}
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H04N21/8126 3 {involving additional data, e.g. news, sports, stocks, weather forecasts}
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H04N21/8133 4 {specifically related to the content, e.g. biography of the actors in a movie, detailed information about an article seen in a video program}
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H04N21/814 4 {comprising emergency warnings (arrangements specially adapted for emergency or urgency in broadcast systems H04H20/59; arrangements for providing alarms, notifications, alerts to substation in data switching networks H04L12/1895)}
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H04N21/8146 3 {involving graphical data, e.g. 3D object, 2D graphics}
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H04N21/8153 4 {comprising still images, e.g. texture, background image}
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H04N21/816 3 {involving special video data, e.g 3D video}
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H04N21/8166 3 {involving executable data, e.g. software (arrangements for executing specific programs G06F9/44; broadcasting computer programmes in broadcast systems H04H20/91; involving the movement of software or configuration parameters H04L67/34)}
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H04N21/8173 4 {End-user applications, e.g. Web browser, game}
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H04N21/818 4 {OS software}
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H04N21/8186 4 {specially adapted to be executed by a peripheral of the client device, e.g. by a reprogrammable remote control}
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H04N21/8193 4 {dedicated tools, e.g. video decoder software or IPMP tool}
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H04N21/83 2 Generation or processing of protective or descriptive data associated with content; Content structuring
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H04N21/835 3 Generation of protective data, e.g. certificates {(protecting software against unauthorised usage in a vending or licensing environment G06F21/10)}
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H04N21/8352 4 involving content or source identification data, e.g. Unique Material Identifier [UMID]
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H04N21/8355 4 involving usage data, e.g. number of copies or viewings allowed
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H04N21/83555 5 {using a structured language for describing usage rules of the content, e.g. REL}
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H04N21/8358 4 involving watermark {(protecting executable software by watermarking G06F21/16; image watermarking in general G06T1/0021; watermarks inserted in still images for transmission purposes H04N1/32144; inserting watermarks during video coding H04N19/467)}
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H04N21/84 3 Generation or processing of descriptive data, e.g. content descriptors {(systems specially adapted for using meta-information in broadcast systems H04H60/73)}
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H04N21/8402 4 {involving a version number, e.g. version number of EPG data (arrangements for version control in computers G06F8/71)}
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H04N21/8405 4 represented by keywords
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H04N21/845 3 Structuring of content, e.g. decomposing content into time segments
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H04N21/8451 4 {using Advanced Video Coding [AVC]}
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H04N21/8453 4 {by locking or enabling a set of features, e.g. optional functionalities in an executable program}
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H04N21/8455 4 {involving pointers to the content, e.g. pointers to the I-frames of the video stream}
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H04N21/8456 4 {by decomposing the content in the time domain, e.g. in time segments}
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H04N21/8458 4 {involving uncompressed content}
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H04N21/85 2 Assembly of content; Generation of multimedia applications
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H04N21/854 3 Content authoring
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H04N21/85403 4 {by describing the content as an MPEG-21 Digital Item}
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H04N21/85406 4 {involving a specific file format, e.g. MP4 format}
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H04N21/8541 4 involving branching, e.g. to different story endings
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H04N21/8543 4 using a description language, e.g. Multimedia and Hypermedia information coding Expert Group [MHEG], eXtensible Markup Language [XML] {(information retrieval of semistructured data, the underlying structure being taken into account, e.g. mark-up language structure data G06F16/80)}
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H04N21/8545 4 for generating interactive applications
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H04N21/8547 4 involving timestamps for synchronizing content
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H04N21/8549 4 Creating video summaries, e.g. movie trailer {(retrieval in video databases by using presentations in form of a video summary G06F16/739)}
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H04N21/858 3 Linking data to content, e.g. by linking an URL to a video object, by creating a hotspot
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H04N21/8583 4 {by creating hot-spots}
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H04N21/8586 4 {by using a URL (processing chained hypermedia data for information retrieval G06F16/94; information retrieval from the Internet by using URLs G06F16/955; URL in broadcast information H04H20/93; Web-based protocols H04L67/02)}
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H04N23/00 0 Cameras or camera modules comprising electronic image sensors; Control thereof
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H04N23/10 1 for generating image signals from different wavelengths
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H04N23/11 2 for generating image signals from visible and infrared light wavelengths
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H04N23/12 2 with one sensor only
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H04N23/125 2 {Colour sequential image capture, e.g. using a colour wheel}
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H04N23/13 2 with multiple sensors
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H04N23/15 3 Image signal generation with circuitry for avoiding or correcting image misregistration
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H04N23/16 3 Optical arrangements associated therewith, e.g. for beam-splitting or for colour correction
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H04N23/17 2 using opto-mechanical scanning means only
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H04N23/20 1 for generating image signals from infrared radiation only
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H04N23/21 2 from near infrared [NIR] radiation
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H04N23/23 2 from thermal infrared radiation
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H04N23/30 1 for generating image signals from X-rays
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H04N23/40 1 Circuit details for pick-up tubes
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H04N23/41 2 {Beam current control}
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H04N23/43 3 {during retrace periods, e.g. circuits for ACT tubes or leg suppression}
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H04N23/45 1 for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
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H04N23/50 1 Constructional details
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H04N23/51 2 Housings
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H04N23/52 2 Elements optimising image sensor operation, e.g. for electromagnetic interference [EMI] protection or temperature control by heat transfer or cooling elements
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H04N23/53 2 of electronic viewfinders, e.g. rotatable or detachable
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H04N23/531 3 {being rotatable or detachable}
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H04N23/54 2 Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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H04N23/55 2 Optical parts specially adapted for electronic image sensors; Mounting thereof
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H04N23/555 2 {for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes}
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H04N23/56 1 provided with illuminating means
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H04N23/57 1 Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
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H04N23/58 1 Means for changing the camera field of view without moving the camera body, e.g. nutating or panning of optics or image sensors
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H04N23/60 1 Control of cameras or camera modules
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H04N23/61 2 based on recognised objects
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H04N23/611 3 where the recognised objects include parts of the human body
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H04N23/617 2 Upgrading or updating of programs or applications for camera control
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H04N23/62 2 Control of parameters via user interfaces
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H04N23/63 2 by using electronic viewfinders
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H04N23/631 3 {Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters}
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H04N23/632 4 {for displaying or modifying preview images prior to image capturing, e.g. variety of image resolutions or capturing parameters}
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H04N23/633 3 {for displaying additional information relating to control or operation of the camera}
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H04N23/634 4 {Warning indications}
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H04N23/635 4 {Region indicators; Field of view indicators}
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H04N23/64 2 {Computer-aided capture of images, e.g. transfer from script file into camera, check of taken image quality, advice or proposal for image composition or decision on when to take image}
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H04N23/65 2 Control of camera operation in relation to power supply
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H04N23/651 3 {for reducing power consumption by affecting camera operations, e.g. sleep mode, hibernation mode or power off of selective parts of the camera}
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H04N23/66 2 Remote control of cameras or camera parts, e.g. by remote control devices
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H04N23/661 3 Transmitting camera control signals through networks, e.g. control via the Internet
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H04N23/662 4 {by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image}
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H04N23/663 3 for controlling interchangeable camera parts based on electronic image sensor signals
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H04N23/665 2 {involving internal camera communication with the image sensor, e.g. synchronising or multiplexing SSIS control signals}
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H04N23/667 2 Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
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H04N23/67 2 Focus control based on electronic image sensor signals
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H04N23/671 3 {in combination with active ranging signals, e.g. using light or sound signals emitted toward objects}
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H04N23/672 3 {based on the phase difference signals}
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H04N23/673 3 {based on contrast or high frequency components of image signals, e.g. hill climbing method}
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H04N23/675 3 {comprising setting of focusing regions}
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H04N23/676 3 {Bracketing for image capture at varying focusing conditions}
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H04N23/68 2 for stable pick-up of the scene, e.g. compensating for camera body vibrations
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H04N23/681 3 {Motion detection}
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H04N23/6811 4 {based on the image signal}
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H04N23/6812 4 {based on additional sensors, e.g. acceleration sensors}
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H04N23/6815 4 {by distinguishing pan or tilt from motion}
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H04N23/682 3 {Vibration or motion blur correction}
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H04N23/683 4 {performed by a processor, e.g. controlling the readout of an image memory}
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H04N23/684 4 {performed by controlling the image sensor readout, e.g. by controlling the integration time}
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H04N23/6842 5 {by controlling the scanning position, e.g. windowing}
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H04N23/6845 5 {by combination of a plurality of images sequentially taken}
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H04N23/685 4 {performed by mechanical compensation}
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H04N23/686 5 {with a variable apex prism}
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H04N23/687 5 {by shifting the lens or sensor position}
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H04N23/689 3 {Motion occurring during a rolling shutter mode}
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H04N23/69 2 Control of means for changing angle of the field of view, e.g. optical zoom objectives or electronic zooming
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H04N23/695 2 Control of camera direction for changing a field of view, e.g. pan, tilt or based on tracking of objects
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H04N23/698 2 for achieving an enlarged field of view, e.g. panoramic image capture
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H04N23/70 1 Circuitry for compensating brightness variation in the scene
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H04N23/71 2 Circuitry for evaluating the brightness variation
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H04N23/72 2 Combination of two or more compensation controls
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H04N23/73 2 by influencing the exposure time
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H04N23/74 2 by influencing the scene brightness using illuminating means
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H04N23/741 2 by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
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H04N23/743 2 Bracketing, i.e. taking a series of images with varying exposure conditions
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H04N23/745 2 Detection of flicker frequency or suppression of flicker wherein the flicker is caused by illumination, e.g. due to fluorescent tube illumination or pulsed LED illumination
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H04N23/749 2 {by influencing the pick-up tube voltages}
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H04N23/75 2 by influencing optical camera components
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H04N23/76 2 by influencing the image signals
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H04N23/80 1 Camera processing pipelines; Components thereof
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H04N23/81 2 for suppressing or minimising disturbance in the image signal generation
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H04N23/811 3 {by dust removal, e.g. from surfaces of the image sensor or processing of the image signal output by the electronic image sensor}
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H04N23/815 2 {for controlling the resolution by using a single image}
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H04N23/82 2 for controlling camera response irrespective of the scene brightness, e.g. gamma correction
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H04N23/83 3 specially adapted for colour signals
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H04N23/84 2 for processing colour signals
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H04N23/841 3 {to modify gamut}
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H04N23/843 3 {Demosaicing, e.g. interpolating colour pixel values}
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H04N23/85 3 for matrixing
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H04N23/86 3 for controlling the colour saturation of colour signals, e.g. automatic chroma control circuits
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H04N23/87 3 for reinsertion of DC or slowly varying components of colour signals
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H04N23/88 3 for colour balance, e.g. white-balance circuits or colour temperature control
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H04N23/90 1 Arrangement of cameras or camera modules, e.g. multiple cameras in TV studios or sports stadiums
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H04N23/95 1 Computational photography systems, e.g. light-field imaging systems
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H04N23/951 2 by using two or more images to influence resolution, frame rate or aspect ratio
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H04N23/955 2 for lensless imaging
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H04N23/957 2 Light-field or plenoptic cameras or camera modules
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H04N23/958 2 for extended depth of field imaging
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H04N23/959 3 by adjusting depth of field during image capture, e.g. maximising or setting range based on scene characteristics
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H04N25/00 0 Circuitry of solid-state image sensors [SSIS]; Control thereof
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H04N25/10 1 for transforming different wavelengths into image signals
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H04N25/11 2 Arrangement of colour filter arrays [CFA]; Filter mosaics
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H04N25/13 3 characterised by the spectral characteristics of the filter elements
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H04N25/131 4 including elements passing infrared wavelengths
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H04N25/133 4 including elements passing panchromatic light, e.g. filters passing white light
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H04N25/134 4 {based on three different wavelength filter elements}
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H04N25/135 4 {based on four or more different wavelength filter elements}
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H04N25/136 5 {using complementary colours}
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H04N25/17 2 Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
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H04N25/20 1 for transforming only infrared radiation into image signals
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H04N25/21 2 for transforming thermal infrared radiation into image signals
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H04N25/30 1 for transforming X-rays into image signals
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H04N25/40 1 Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
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H04N25/41 2 {Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors}
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H04N25/42 2 by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
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H04N25/44 2 by partially reading an SSIS array
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H04N25/441 3 by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
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H04N25/443 3 by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
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H04N25/445 3 by skipping some contiguous pixels within the read portion of the array
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H04N25/447 3 by preserving the colour pattern with or without loss of information
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H04N25/46 2 by combining or binning pixels
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H04N25/47 1 Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
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H04N25/48 1 Increasing resolution by shifting the sensor relative to the scene
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H04N25/50 1 Control of the SSIS exposure
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H04N25/51 2 Control of the gain
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H04N25/53 2 Control of the integration time
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H04N25/531 3 by controlling rolling shutters in CMOS SSIS
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H04N25/532 3 by controlling global shutters in CMOS SSIS
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H04N25/533 3 by using differing integration times for different sensor regions
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H04N25/534 4 depending on the spectral component
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H04N25/535 4 by dynamic region selection
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H04N25/57 2 Control of the dynamic range
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H04N25/571 3 involving a non-linear response
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H04N25/573 4 {the logarithmic type}
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H04N25/575 4 {with a response composed of multiple slopes}
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H04N25/58 3 involving two or more exposures
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H04N25/581 4 acquired simultaneously
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H04N25/583 5 with different integration times
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H04N25/585 5 with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
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H04N25/587 4 acquired sequentially, e.g. using the combination of odd and even image fields
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H04N25/589 5 with different integration times, e.g. short and long exposures
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H04N25/59 3 by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
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H04N25/60 1 Noise processing, e.g. detecting, correcting, reducing or removing noise
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H04N25/61 2 the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
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H04N25/611 3 Correction of chromatic aberration
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H04N25/615 3 involving a transfer function modelling the optical system, e.g. optical transfer function [OTF], phase transfer function [PhTF] or modulation transfer function [MTF]
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H04N25/6153 4 {for colour signals}
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H04N25/616 2 involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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H04N25/617 2 for reducing electromagnetic interference, e.g. clocking noise
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H04N25/618 2 for random or high-frequency noise
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H04N25/62 2 Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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H04N25/621 3 for the control of blooming
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H04N25/622 4 {by controlling anti-blooming drains}
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H04N25/623 4 {by evacuation via the output or reset lines}
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H04N25/625 3 for the control of smear
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H04N25/626 3 Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
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H04N25/627 3 Detection or reduction of inverted contrast or eclipsing effects
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H04N25/628 3 for reducing horizontal stripes caused by saturated regions of CMOS sensors
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H04N25/63 2 applied to dark current
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H04N25/633 3 by using optical black pixels
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H04N25/65 2 applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
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H04N25/67 2 applied to fixed-pattern noise, e.g. non-uniformity of response
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H04N25/671 3 for non-uniformity detection or correction
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H04N25/672 4 between adjacent sensors or output registers for reading a single image
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H04N25/673 4 by using reference sources
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H04N25/674 5 based on the scene itself, e.g. defocusing
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H04N25/677 4 for reducing the column or line fixed pattern noise
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H04N25/68 2 applied to defects
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H04N25/683 3 by defect estimation performed on the scene signal, e.g. real time or on the fly detection
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H04N25/69 3 SSIS comprising testing or correcting structures for circuits other than pixel cells
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H04N25/70 1 SSIS architectures; Circuits associated therewith
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H04N25/701 2 Line sensors
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H04N25/7013 3 {using abutted sensors forming a long line}
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H04N25/702 2 SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
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H04N25/703 2 SSIS architectures incorporating pixels for producing signals other than image signals
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H04N25/704 3 Pixels specially adapted for focusing, e.g. phase difference pixel sets
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H04N25/705 3 Pixels for depth measurement, e.g. RGBZ
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H04N25/706 3 Pixels for exposure or ambient light measuring
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H04N25/707 3 Pixels for event detection
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H04N25/708 3 Pixels for edge detection
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H04N25/709 2 Circuitry for control of the power supply
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H04N25/71 2 Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
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H04N25/711 3 Time delay and integration [TDI] registers; TDI shift registers
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H04N25/713 3 Transfer or readout registers; Split readout registers or multiple readout registers
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H04N25/715 3 using frame interline transfer [FIT]
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H04N25/72 3 using frame transfer [FT]
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H04N25/73 3 using interline transfer [IT]
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H04N25/74 3 Circuitry for scanning or addressing the pixel array
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H04N25/745 3 {Circuitry for generating timing or clock signals}
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H04N25/75 3 Circuitry for providing, modifying or processing image signals from the pixel array
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H04N25/76 2 Addressed sensors, e.g. MOS or CMOS sensors
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H04N25/766 3 comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
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H04N25/767 3 Horizontal readout lines, multiplexers or registers
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H04N25/768 3 for time delay and integration [TDI]
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H04N25/77 3 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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H04N25/771 4 comprising storage means other than floating diffusion
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H04N25/772 4 comprising A/D, V/T, V/F, I/T or I/F converters
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H04N25/773 5 comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
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H04N25/778 4 comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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H04N25/779 3 Circuitry for scanning or addressing the pixel array
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H04N25/7795 3 {Circuitry for generating timing or clock signals}
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H04N25/78 3 Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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H04N25/79 2 Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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H04N2101/00 0 Still video cameras
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H04N2201/00 0 Indexing scheme relating to scanning, transmission or reproduction of documents or the like, and to details thereof
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H04N2201/0001 1 Diagnosis, testing or measuring; Detecting, analysis or monitoring not otherwise provided for
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H04N2201/0003 2 Method used
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H04N2201/0005 3 using a reference pattern designed for the purpose, e.g. a test chart
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H04N2201/0006 4 details of the reference pattern (DM 1105)
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H04N2201/0008 1 Connection or combination of a still picture apparatus with another apparatus
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H04N2201/001 2 Sharing resources, e.g. processing power or memory, with a connected apparatus or enhancing the capability of the still picture apparatus
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H04N2201/0012 3 Use of shared folders, i.e. folders or directories accessible by all connected apparatus
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H04N2201/0013 2 Arrangements for the control of the connected apparatus by the still picture apparatus (arrangements for the control of a still picture apparatus by the connected apparatus H04N2201/0074; control of image communication with the connected apparatus H04N2201/0015)
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H04N2201/0015 2 Control of image communication with the connected apparatus, e.g. signalling capability
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H04N2201/0017 3 Notifying a communication result
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H04N2201/0018 4 via a non-image communication channel, e.g. via a computer network
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H04N2201/002 3 Selecting or switching between an image communication channel and a non-image communication channel
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H04N2201/0022 3 Selecting or switching between an image communication mode and a non-image communication mode (H04N2201/002 takes precedence)
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H04N2201/0024 3 Converting image communication control signals, e.g. group 3 facsimile protocol signals, to non-image communication control signals or vice versa
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H04N2201/0025 3 Adapting an image communication to a non-image communication or vice versa, e.g. data rate-conversion
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H04N2201/0027 3 Adapting to communicate with plural different types of apparatus
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H04N2201/0029 3 Avoiding duplicate transfer of image data
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H04N2201/0031 3 where the still picture apparatus acts as the master
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H04N2201/0032 3 where the still picture apparatus acts as the slave
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H04N2201/0034 2 Details of the connection, e.g. connector, interface
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H04N2201/0036 3 Detecting or checking connection
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H04N2201/0037 3 Topological details of the connection
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H04N2201/0039 4 Connection via a network
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H04N2201/0041 4 Point to point (H04N2201/0039 takes precedence)
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H04N2201/0043 4 Point to multipoint (H04N2201/0039 takes precedence)
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H04N2201/0044 3 Connecting to a plurality of different apparatus; Using a plurality of different connectors (connection via a network H04N2201/0039)
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H04N2201/0046 3 Software interface details, e.g. interaction of operating systems
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H04N2201/0048 3 Type of connection
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H04N2201/0049 4 By wire, cable or the like
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H04N2201/0051 4 Card-type connector, e.g. PCMCIA card interface
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H04N2201/0053 4 Optical, e.g. using an infra-red link
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H04N2201/0055 4 By radio
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H04N2201/0056 4 Using mechanical couplings, e.g. mating elements (H04N2201/0049, H04N2201/0051, H04N2201/0058 take precedence)
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H04N2201/0058 4 Docking-station, cradle or the like
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H04N2201/006 4 Using near field communication, e.g. an inductive loop
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H04N2201/0062 3 Stand-alone interface device
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H04N2201/0063 2 Constructional details
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H04N2201/0065 2 Converting image data to a format usable by the connected apparatus or vice versa
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H04N2201/0067 3 Converting to still picture data
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H04N2201/0068 3 Converting from still picture data
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H04N2201/007 2 Selecting or switching between a still picture apparatus or function and another apparatus or function (H04N2201/0022 takes precedence)
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H04N2201/0072 2 Detecting the status of a connected apparatus
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H04N2201/0074 2 Arrangements for the control of a still picture apparatus by the connected apparatus (arrangements for the control of the connected apparatus by the still picture apparatus H04N2201/0013; control of image communication with the connected apparatus H04N2201/0015)
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H04N2201/0075 3 by a user operated remote control device, e.g. receiving instructions from a user via a computer terminal or mobile telephone handset
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H04N2201/0077 1 Types of the still picture apparatus
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H04N2201/0079 2 Medical imaging device
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H04N2201/0081 2 Image reader (H04N2201/0091 - H04N2201/0094 take precedence)
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H04N2201/0082 2 Image hardcopy reproducer (H04N2201/0091 - H04N2201/0094 take precedence)
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H04N2201/0084 2 Digital still camera
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H04N2201/0086 2 Image transceiver (H04N2201/0093 and H04N2201/0094 take precedence)
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H04N2201/0087 2 Image storage device
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H04N2201/0089 2 Image display device
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H04N2201/0091 2 Digital copier; digital 'photocopier' (H04N2201/0093 and H04N2201/0094 take precedence)
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H04N2201/0093 2 Facsimile machine (H04N2201/0094 takes precedence)
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H04N2201/0094 2 Multifunctional device, i.e. a device capable of all of reading, reproducing, copying, facsimile transception, file transception
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H04N2201/0096 1 Portable devices
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H04N2201/0098 1 User intervention not otherwise provided for, e.g. placing documents, responding to an alarm
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H04N2201/024 1 deleted
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H04N2201/02402 2 Arrangements for positioning heads, e.g. with respect to other elements of the apparatus
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H04N2201/02404 2 Arrangements for mounting or supporting heads (H04N2201/02402 takes precedence)
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H04N2201/02406 2 Arrangements for positioning elements within a head (H04N1/02409 takes precedence; arrangements for positioning heads H04N2201/02402)
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H04N2201/02408 3 Translational positioning
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H04N2201/0241 4 in a direction parallel to the main-scanning direction
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H04N2201/02412 4 in a direction parallel to the sub-scanning direction
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H04N2201/02414 4 in a direction perpendicular to the plane of the photodetector elements, e.g. in the direction of the optical axis (H04N1/02409 takes precedence)
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H04N2201/02416 3 Rotational positioning, i.e. with respect to an axis
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H04N2201/02418 4 Rotation about the optical axis
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H04N2201/0242 4 Rotation about an axis in the plane of the scanning elements orthogonal to the optical axis, the axis of rotation extending in the main-scanning direction, e.g. the longitudinal axis of a linear array
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H04N2201/02422 4 Rotation about an axis in the plane of the scanning elements orthogonal to the optical axis, the axis of rotation extending in the sub-scanning direction, e.g. the transverse axis of a linear array
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H04N2201/02425 3 Self-adjusting arrangements, e.g. compensating for temperature fluctuations
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H04N2201/02427 3 Element positioned
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H04N2201/02429 4 Photodetector element, e.g. CCD array
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H04N2201/02431 4 Lens or optical system
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H04N2201/02433 4 Reflective element, e.g. mirror
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H04N2201/02435 4 Illuminating means
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H04N2201/02437 4 Transparent cover
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H04N2201/02439 3 Positioning method
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H04N2201/02441 4 using screws
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H04N2201/02443 4 using adhesive
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H04N2201/02445 4 using clips or the like
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H04N2201/02447 4 using elastic means, e.g. springs (H04N2201/02445 takes precedence)
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H04N2201/02449 4 using a reference element, e.g. a stop
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H04N2201/02452 2 Arrangements for mounting or supporting elements within a scanning head (H04N2201/02406, H04N2201/03154 take precedence)
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H04N2201/02454 3 Element mounted or supported
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H04N2201/02456 4 Scanning element, e.g. CCD array, photodetector
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H04N2201/02458 4 Lens or optical system
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H04N2201/0246 4 Mirror, reflecting element or beam splitter
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H04N2201/02462 4 Illuminating means
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H04N2201/02464 4 Transparent cover or window
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H04N2201/02466 3 Mounting or supporting method
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H04N2201/02468 4 using screws
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H04N2201/0247 4 using adhesive
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H04N2201/02472 4 using clips
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H04N2201/02474 4 Clasping; Clamping (H04N2201/02472 takes precedence)
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H04N2201/02477 4 using elastic means, e.g. springs (H04N2201/02472 takes precedence)
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H04N2201/02479 3 Mounting or supporting means
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H04N2201/02481 4 Single piece support, e.g. molded plastic support
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H04N2201/02483 4 Housing or part of the housing, e.g. bottom plate (H04N2201/02481 takes precedence)
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H04N2201/02485 4 Dedicated element, e.g. bracket or arm
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H04N2201/02487 2 Manufacturing details (H04N2201/02406, H04N2201/02452 take precedence)
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H04N2201/02489 2 Arrangements for allowing access to the scanning head, e.g. for service or repair
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H04N2201/02491 2 Arrangements for reducing the effects of vibrations
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H04N2201/02493 2 Additional optical elements not otherwise provided for, e.g. filters, polarising plates, masks or apertures
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H04N2201/02495 2 Constructional details not otherwise provided for, e.g. for ease of assembly, allowing access to the scanning elements, integrated reinforcing members
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H04N2201/02497 2 Additional elements, e.g. sheet guide plates, light shields (H04N2201/02489 - H04N2201/02495 take precedence)
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H04N2201/028 2 for picture information pick-up
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H04N2201/03 3 deleted
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H04N2201/031 4 deleted
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H04N2201/03104 5 Integral pick-up heads, i.e. self-contained heads whose basic elements are a light source, a lens and a photodetector supported by a single-piece frame
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H04N2201/03108 6 Components of integral heads
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H04N2201/03112 7 Light source
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H04N2201/03116 7 Light source lens
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H04N2201/0312 7 Reflecting element upstream of the scanned picture elements
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H04N2201/03125 7 Light guide upstream of the scanned picture elements
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H04N2201/03129 7 Transparent cover or transparent document support mounted on the head
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H04N2201/03133 7 Window, i.e. a transparent member mounted in the frame
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H04N2201/03137 7 Reflecting element downstream of the scanned picture elements
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H04N2201/03141 7 Photodetector lens
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H04N2201/03145 7 Photodetector
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H04N2201/0315 6 Details of integral heads not otherwise provided for
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H04N2201/03154 7 Additional internal supporting or reinforcing member
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H04N2201/03158 7 Heat radiator
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H04N2201/03162 7 Original guide plate
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H04N2201/03166 7 Additional light shielding member
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H04N2201/0317 7 Shape
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H04N2201/03175 7 Position
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H04N2201/03179 7 Frame
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H04N2201/03183 7 Material
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H04N2201/03187 7 Additional optical element
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H04N2201/03191 7 Adhesive element
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H04N2201/03195 7 Coating, e.g. light adsorbing layer
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H04N2201/04 1 Scanning arrangements
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H04N2201/0402 2 Arrangements not specific to a particular one of the scanning methods covered by groups H04N1/04 - H04N1/207
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H04N2201/0404 3 Scanning transparent media, e.g. photographic film
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H04N2201/0406 4 Scanning slides
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H04N2201/0408 4 Scanning film strips or rolls
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H04N2201/041 4 Scanning microfilms or microfiches
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H04N2201/0412 4 Scanning X-ray films
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H04N2201/0414 3 Scanning an image in a series of overlapping zones
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H04N2201/0416 3 Performing a pre-scan
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H04N2201/0418 3 capable of scanning transmissive and reflective originals at a single scanning station
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H04N2201/042 3 capable of using different scanning methods at a single scanning station
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H04N2201/0422 3 Media holders, covers, supports, backgrounds; Arrangements to facilitate placing of the medium (H04N2201/0406 - H04N2201/0412, H04N2201/0434 take precedence)
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H04N2201/0424 3 Scanning non-straight lines
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H04N2201/0426 3 Scanning an image in a series of contiguous zones
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H04N2201/0428 3 Stabilising the scanning parts; Preventing vibrations
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H04N2201/043 3 Viewing the scanned area
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H04N2201/0432 3 Adjusting the orientation of the scanning elements relative to the scanned sheet, e.g. changing from longitudinal to lateral scanning
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H04N2201/0434 3 specially adapted for scanning pages of a book
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H04N2201/0436 3 Scanning a picture-bearing surface lying face up on a support (H04N2201/0434 takes precedence; using cylindrical picture bearing surfaces H04N1/06; with manual scanning H04N1/107)
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H04N2201/0438 3 Scanning displays; Scanning large surfaces, e.g. projection screens, writing boards
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H04N2201/044 3 Moving a scanning element into cooperation with a calibration element, e.g. a grey-wedge mounted on the document support, or vice versa
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H04N2201/0442 3 Details of scanning carriage or moving picture-bearing surface support, e.g. bearing contact with guide rails
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H04N2201/0444 3 for securing moveable scanning components, e.g. for transportation
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H04N2201/0446 3 Constructional details not otherwise provided for, e.g. mounting of scanning components (H04N2201/0448 takes precedence)
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H04N2201/0448 3 for positioning scanning elements not otherwise provided for; Aligning, e.g. using an alignment calibration pattern (arrangements for positioning elements within a scanning head H04N2201/02406)
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H04N2201/045 3 Mounting the scanning elements in a collapsible or foldable structure, e.g. for ease of transportation
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H04N2201/0452 3 Indicating the scanned area, e.g. by projecting light marks onto the medium
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H04N2201/0454 3 for increasing the scanning speed
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H04N2201/0456 3 for maintaining a predetermined distance between the scanning elements and the picture-bearing surface
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H04N2201/0458 3 Additional arrangements for improving or optimising scanning resolution or quality
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H04N2201/046 3 Actively compensating for disturbances, e.g. vibrations
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H04N2201/0462 3 for reducing inactive scanning periods, e.g. increasing speed of carriage during return movement
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H04N2201/0464 3 Self-propelled scanners, e.g. robotic scanners, means for propulsion integrated in the scanner carriage
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H04N2201/0466 3 Selectively scanning in one or the other of two opposite directions, e.g. in the forward or the reverse direction
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H04N2201/0468 4 Scanning in both of the two directions, e.g. during the forward and return movements
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H04N2201/047 2 Detection, control or error compensation of scanning velocity or position
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H04N2201/04701 3 Detection of scanning velocity or position
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H04N2201/04703 4 using the scanning elements as detectors, e.g. by performing a prescan
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H04N2201/04705 5 using inactive scanning elements, e.g. elements outside the scanning area
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H04N2201/04706 6 which undergo the same scanning as the active elements in at least one direction
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H04N2201/04708 6 which remain outside the scanned image area
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H04N2201/0471 4 using dedicated detectors
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H04N2201/04712 5 using unbroken arrays of detectors, i.e. detectors mounted on the same substrate
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H04N2201/04713 5 Details of the detector arrangement, e.g. non-standard position, optical details (H04N2201/04712 takes precedence)
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H04N2201/04715 4 by detecting marks or the like, e.g. slits
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H04N2201/04717 5 on the scanned sheet, e.g. a reference sheet
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H04N2201/04718 6 outside the image area
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H04N2201/0472 5 on or adjacent the sheet support
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H04N2201/04722 5 on a photoconductive drum or belt
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H04N2201/04724 5 on a separate encoder wheel
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H04N2201/04725 6 connected to the sub-scanning drive means
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H04N2201/04727 5 on a linear encoder
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H04N2201/04729 4 in the main-scan direction
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H04N2201/04731 4 in the sub-scan direction
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H04N2201/04732 4 Detecting at infrequent intervals, e.g. once or twice per line for main-scan control
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H04N2201/04734 4 Detecting at frequent intervals, e.g. once per line for sub-scan control
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H04N2201/04736 5 with varying intervals between consecutive detections
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H04N2201/04737 4 by detecting the scanned medium directly, e.g. a leading edge
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H04N2201/04739 4 by detecting the scanning head or scanning carriage
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H04N2201/04741 4 by detecting the sheet support or the photoconductive surface directly
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H04N2201/04743 4 by detecting the image directly (detecting reference images H04N2201/04717)
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H04N2201/04744 4 by detecting the scanned beam or a reference beam
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H04N2201/04746 5 after modulation by a grating, mask or the like
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H04N2201/04748 4 by detecting synchronisation signals or driving signals, e.g. page sync
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H04N2201/04749 4 Detecting position relative to a gradient, e.g. using triangular-shaped masks, marks or gratings
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H04N2201/04751 4 Detecting position relative to a step, e.g. using L-shaped masks, marks or gratings
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H04N2201/04753 3 Control or error compensation of scanning position or velocity
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H04N2201/04755 4 by controlling the position or movement of a scanning element or carriage, e.g. of a polygonal mirror, of a drive motor
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H04N2201/04756 4 by controlling the position or movement of the sheet, the sheet support or the photoconductive surface
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H04N2201/04758 4 by controlling the position of the scanned image area (H04N2201/04755, H04N2201/04756 take precedence)
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H04N2201/0476 5 using an optical, electro-optical or acousto-optical element
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H04N2201/04762 6 using a reflecting element (H04N2201/04765 takes precedence)
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H04N2201/04763 6 using a refracting element
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H04N2201/04765 6 using a solid-state deflector, e.g. an acousto-optic deflector
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H04N2201/04767 5 by controlling the timing of the signals, e.g. by controlling the frequency o phase of the pixel clock
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H04N2201/04768 6 Controlling the frequency of the signals
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H04N2201/0477 7 using a clock signal composed from a number of clock signals of different frequencies
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H04N2201/04772 7 using a phase-locked loop
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H04N2201/04774 7 using a reference clock or oscillator (H04N2201/04772 takes precedence)
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H04N2201/04775 7 using a counter (H04N2201/04772 takes precedence)
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H04N2201/04777 7 using a voltage controlled oscillator (H04N2201/04772 takes precedence)
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H04N2201/04779 7 using a clock signal composed from a number of clock signals of different phase
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H04N2201/04781 6 Controlling the phase of the signals
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H04N2201/04782 7 using a clock signal composed from a number of clock signals of different frequencies
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H04N2201/04784 7 using one or more clock signals selected from a number of clock signals of different phases
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H04N2201/04786 7 Controlling a start time, e.g. for output of a line of data (H04N2201/04784 takes precedence)
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H04N2201/04787 5 by changing or controlling the addresses or values of pixels, e.g. in an array, in a memory, by interpolation
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H04N2201/04789 4 in the main-scan direction
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H04N2201/04791 4 in the sub-scan direction
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H04N2201/04793 4 using stored control or compensation data, e.g. previously measured data
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H04N2201/04794 4 Varying the control or compensation during the scan, e.g. using continuous feedback or from line to line
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H04N2201/04796 5 Varying the sub-scan control during the main-scan, e.g. for correcting skew, tilt or bow of a scanning beam
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H04N2201/04798 5 Varying the main-scan control during the main-scan, e.g. facet tracking
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H04N2201/21 1 Intermediate information storage
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H04N2201/212 2 Selecting different recording or reproducing modes, e.g. high or low resolution, field or frame
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H04N2201/214 2 Checking or indicating the storage space
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H04N2201/216 2 Arrangements for recording on different types of storage medium, e.g. IC card or magnetic tape; Recording on a plurality of storage media
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H04N2201/218 2 Deletion of stored data; Preventing such deletion
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H04N2201/32 1 Circuits or arrangements for control or supervision between transmitter and receiver or between image input and image output device, e.g. between a still-image camera and its memory or between a still-image camera and a printer device
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H04N2201/3201 2 Display, printing, storage or transmission of additional information, e.g. ID code, date and time or title
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H04N2201/3202 3 of communication or activity log or report
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H04N2201/3204 3 of data relating to a user, sender, addressee, machine or electronic recording medium (H04N2201/3256 and subgroups take precedence)
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H04N2201/3205 4 of identification information, e.g. name or ID code (H04N2201/3209 takes precedence)
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H04N2201/3207 4 of an address
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H04N2201/3208 5 of an e-mail or network address
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H04N2201/3209 4 of a telephone number
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H04N2201/3211 4 of a company logo or the like
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H04N2201/3212 3 of data relating to a job, e.g. communication, capture or filing of an image
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H04N2201/3214 4 of a date
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H04N2201/3215 4 of a time or duration
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H04N2201/3216 4 of a job size, e.g. a number of images, pages or copies, size of file, length of message
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H04N2201/3218 4 of a confirmation, acknowledgement or receipt
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H04N2201/3219 4 of a job status, e.g. successful execution
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H04N2201/3221 4 of a job number or identification, e.g. communication number
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H04N2201/3222 4 of processing required or performed, e.g. forwarding, urgent or confidential handling
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H04N2201/3223 4 of type information, e.g. reception or copy job
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H04N2201/3225 3 of data relating to an image, a page or a document
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H04N2201/3226 4 of identification information or the like, e.g. ID code, index, title, part of an image, reduced-size image
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H04N2201/3228 5 further additional information (metadata) being comprised in the identification information
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H04N2201/3229 6 further additional information (metadata) being comprised in the file name (including path, e.g. directory or folder names at one or more higher hierarchical levels)
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H04N2201/323 5 for tracing or tracking, e.g. forensic tracing of unauthorized copies
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H04N2201/3232 4 of a page, copy or picture number
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H04N2201/3233 4 of authentication information, e.g. digital signature, watermark
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H04N2201/3235 5 Checking or certification of the authentication information, e.g. by comparison with data stored independently
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H04N2201/3236 5 Details of authentication information generation
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H04N2201/3238 6 using a coded or compressed version of the image data itself
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H04N2201/3239 5 using a plurality of different authentication information
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H04N2201/324 5 Selecting a particular authentication information from amongst a plurality of different authentication information
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H04N2201/3242 4 of processing required or performed, e.g. for reproduction or before recording (H04N2201/3256 and subgroups take precedence)
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H04N2201/3243 4 of type information, e.g. handwritten or text document
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H04N2201/3245 4 of image modifying data, e.g. handwritten addenda, highlights or augmented reality information
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H04N2201/3246 4 of data relating to permitted access or usage, e.g. level of access or usage parameters for digital rights management [DRM] related to still images
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H04N2201/3247 4 Data linking a set of images to one another, e.g. sequence, burst or continuous capture mode
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H04N2201/3249 4 data relating to a linked page or object, e.g. hyperlink
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H04N2201/325 4 Modified version of the image, e.g. part of the image, image reduced in size or resolution, thumbnail or screennail
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H04N2201/3251 5 where the modified version of the image is relating to a person or face
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H04N2201/3252 4 Image capture parameters, e.g. resolution, illumination conditions, orientation of the image capture device (H04N2201/3256 and subgroups take precedence)
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H04N2201/3253 4 Position information, e.g. geographical position at time of capture, GPS data
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H04N2201/3254 4 Orientation, e.g. landscape or portrait; Location or order of the image data, e.g. in memory
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H04N2201/3256 4 colour related metadata, e.g. colour, ICC profiles (for use made of colour related metadata see the appropriate place, e.g. H04N1/60, H04N1/60 and subgroups)
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H04N2201/3257 5 relating to the original, the input device or the input process, e.g. scanner profile
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H04N2201/3259 5 relating to the image, page or document, e.g. intended colours
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H04N2201/326 5 relating to the rendering or output medium, device or process, e.g. monitor, paper or printer profile
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H04N2201/3261 3 of multimedia information, e.g. a sound signal
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H04N2201/3263 4 of a graphical motif or symbol, e.g. Christmas symbol, logo (H04N2201/3211 takes precedence)
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H04N2201/3264 4 of sound signals
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H04N2201/3266 4 of text or character information, e.g. text accompanying an image (H04N2201/3226 takes precedence)
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H04N2201/3267 4 of motion picture signals, e.g. video clip
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H04N2201/3269 3 of machine readable codes or marks, e.g. bar codes or glyphs
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H04N2201/327 4 which are undetectable to the naked eye, e.g. embedded codes
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H04N2201/3271 3 Printing or stamping
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H04N2201/3273 3 Display
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H04N2201/3274 3 Storage or retrieval of prestored additional information
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H04N2201/3276 4 of a customised additional information profile, e.g. a profile specific to a user ID
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H04N2201/3277 4 The additional information being stored in the same storage device as the image data
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H04N2201/3278 3 Transmission
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H04N2201/328 3 Processing of the additional information
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H04N2201/3281 4 Encryption; Ciphering
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H04N2201/3283 4 Compression
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H04N2201/3284 4 for error correction
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H04N2201/3285 2 using picture signal storage, e.g. at transmitter
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H04N2201/3287 3 Storage of at least one complete document page or image frame
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H04N2201/3288 3 Storage of two or more complete document pages or image frames
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H04N2201/329 3 Storage of less than a complete document page or image frame
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H04N2201/3291 4 of less than a complete line of data
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H04N2201/3292 4 of one or two complete lines
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H04N2201/3294 4 of several complete lines, e.g. a band of data
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H04N2201/3295 3 Deletion of stored data; Preventing such deletion
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H04N2201/3297 3 Simultaneous use of a single memory for different image storage purposes
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H04N2201/3298 3 Checking or indicating the storage space
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H04N2201/333 2 Mode signalling or mode changing; Handshaking therefor
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H04N2201/33307 3 of a particular mode
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H04N2201/33314 4 of reading or reproducing mode
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H04N2201/33321 5 Image or page size, e.g. A3, A4
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H04N2201/33328 5 Resolution
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H04N2201/33335 5 Presentation, e.g. orientation, simplex, duplex
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H04N2201/33342 4 of transmission mode
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H04N2201/3335 5 Speed or rate
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H04N2201/33357 5 Compression mode
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H04N2201/33364 5 Type of modulation; Type of channel, e.g. digital or analog; Type of communication, e.g. half-duplex or full-duplex
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H04N2201/33371 5 using test signals, e.g. checking error occurrences
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H04N2201/33378 4 Type or format of data, e.g. colour or B/W, halftone or binary, computer image file or facsimile data
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H04N2201/33385 4 Line- or page- scan or transmission time, e.g. minimum line-scan time
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H04N2201/33392 4 Non-standard capability, e.g. relay, mail-box
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H04N2209/00 0 Details of colour television systems
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H04N2209/04 1 Picture signal generators
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H04N2209/041 2 using solid-state devices
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H04N2209/042 3 having a single pick-up sensor
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H04N2209/043 4 using an alternating colour separation filter, e.g. colour wheel or colour LCD
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H04N2209/044 4 using sequential colour illumination
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H04N2209/045 4 using mosaic colour filter
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H04N2209/046 5 Colour interpolation to calculate the missing colour values
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H04N2209/047 4 using multispectral pick-up elements
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H04N2209/048 3 having several pick-up sensors
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H04N2209/049 4 having three pick-up sensors
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H04N2213/00 0 Details of stereoscopic systems
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H04N2213/001 1 Constructional or mechanical details
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H04N2213/002 1 Eyestrain reduction by processing stereoscopic signals or controlling stereoscopic devices
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H04N2213/003 1 Aspects relating to the "2D+depth" image format
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H04N2213/005 1 Aspects relating to the "3D+depth" image format
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H04N2213/006 1 Pseudo-stereoscopic systems, i.e. systems wherein a stereoscopic effect is obtained without sending different images to the viewer's eyes
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H04N2213/007 1 Aspects relating to detection of stereoscopic image format, e.g. for adaptation to the display format
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H04N2213/008 1 Aspects relating to glasses for viewing stereoscopic images
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H04Q SELECTING (switches, relays, selectors H01H; wireless communication networks H04W)
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H04Q1/00 0 Details of selecting apparatus or arrangements
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H04Q1/02 1 Constructional details
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H04Q1/021 2 {using pivoting mechanisms for accessing the interior of the apparatus}
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H04Q1/023 2 {using sliding mechanisms for accessing the interior of the apparatus}
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H04Q1/025 2 {Cabinets}
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H04Q1/026 3 {characterized by door details}
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H04Q1/028 2 {Subscriber network interface devices}
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H04Q1/03 2 {Power distribution arrangements}
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H04Q1/032 3 {power failure protection}
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H04Q1/035 2 {Cooling of active equipments, e.g. air ducts}
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H04Q1/04 2 Frames or mounting racks for selector switches; Accessories therefor, e.g. frame cover
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H04Q1/06 2 Cable ducts or mountings specially adapted for exchange installations
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H04Q1/062 3 {vertical management arrangements}
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H04Q1/064 3 {horizontal management arrangements}
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H04Q1/066 3 {arranged on the front side}
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H04Q1/068 3 {arranged on the rear side}
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H04Q1/08 2 Frames or mounting racks for relays; Accessories therefor
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H04Q1/09 2 {Frames or mounting racks not otherwise provided for}
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H04Q1/10 2 Exchange station construction
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H04Q1/11 2 {Protection against environment}
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H04Q1/112 3 {mechanical protection, e.g. resistance to earthquakes}
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H04Q1/114 3 {flooding protection, e.g. using water proof provision}
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H04Q1/116 3 {lightning or EMI protection, e.g. shielding or grounding}
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H04Q1/118 3 {heat or sun protection}
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H04Q1/12 2 Arrangements of multiple bars with or without pivotable frames
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H04Q1/13 2 {Patch panels for monitoring, interconnecting or testing circuits, e.g. patch bay, patch field or jack field; Patching modules}
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H04Q1/131 3 {being pivotable}
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H04Q1/133 3 {being slidable}
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H04Q1/135 3 {characterized by patch cord details}
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H04Q1/136 4 {having patch field management or physical layer management arrangements}
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H04Q1/138 5 {using RFID}
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H04Q1/14 2 Distribution frames
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H04Q1/141 3 {Details of connexions between cable and distribution frame}
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H04Q1/142 3 {Terminal blocks for distribution frames}
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H04Q1/143 3 {with contacts on circular surface}
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H04Q1/144 3 {Plugs used in distribution frames}
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H04Q1/145 3 {with switches arranged in a matrix configuration}
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H04Q1/146 3 {with line protection means}
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H04Q1/147 3 {using robots for distributing}
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H04Q1/148 3 {Identification strips for distribution frames}
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H04Q1/149 3 {Wireguides in connector blocks}
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H04Q1/15 2 {Backplane arrangements}
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H04Q1/155 3 {characterised by connection features}
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H04Q1/16 2 Wiring arrangements for selector switches or relays in frames
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H04Q1/18 1 Electrical details
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H04Q1/20 2 Testing circuits or apparatus; Circuits or apparatus for detecting, indicating, or signalling faults or troubles
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H04Q1/22 3 Automatic arrangements
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H04Q1/24 4 for connection devices
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H04Q1/245 5 {in time-division multiplex systems}
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H04Q1/26 4 for signalling trouble in unoccupied sub-exchanges
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H04Q1/28 2 Current-supply circuits or arrangements for selection equipment at exchanges
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H04Q1/30 2 Signalling arrangements; Manipulation of signalling currents (multiplex systems providing for calling or supervisory signals H04J1/14, H04J3/12)
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H04Q1/32 3 using trains of dc pulses (H04Q1/39 takes precedence)
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H04Q1/34 4 Impulse regenerators with mechanical or other non-electrical marking arrangements
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H04Q1/36 4 Pulse-correcting arrangements, e.g. for reducing effects due to interference
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H04Q1/38 3 using combinations of direct currents of different amplitudes or polarities over line conductors or combination of line conductors
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H04Q1/39 3 using coded pulse groups
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H04Q1/40 3 whereby duration of pulse or interval between two pulses is variable
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H04Q1/42 4 involving the position of a pulse in a cycle
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H04Q1/44 3 using alternate current (H04Q1/50 takes precedence)
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H04Q1/442 4 with out-of-voice band signalling frequencies
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H04Q1/4423 5 {using one signalling frequency}
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H04Q1/4426 5 {using two or more signalling frequencies, transmitted in succession or simultaneously}
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H04Q1/444 4 with voice-band signalling frequencies
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H04Q1/446 5 using one signalling frequency (H04Q1/46 takes precedence)
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H04Q1/4465 6 {the same frequency being used for all signalling information, e.g. A.C. nr.9 system}
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H04Q1/448 6 with conversion of a single frequency signal into a digital signal
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H04Q1/4485 7 {which is transmitted in digital form}
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H04Q1/45 5 using multi-frequency signalling (H04Q1/46 takes precedence)
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H04Q1/453 6 in which m-out-of-n signalling frequencies are transmitted
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H04Q1/4535 7 {with an additional signal transmitted for voice protection}
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H04Q1/457 6 with conversion of multifrequency signals into digital signals
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H04Q1/4575 7 {which are transmitted in digital form}
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H04Q1/46 5 comprising means for distinguishing between a signalling current of predetermined frequency and a complex current containing that frequency, e.g. speech current
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H04Q1/48 3 Induced-current signalling arrangements
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H04Q1/50 3 Conversion between different kinds of signals
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H04Q1/54 2 Amplifier switched-on automatically in dependence on automatically-selected lines
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H04Q1/56 2 Balancing circuitry switched-on automatically in dependence on automatically-selected lines
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H04Q3/00 0 Selecting arrangements (H04Q5/00 - H04Q11/00 take precedence)
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H04Q3/0004 1 {using crossbar selectors in the switching stages}
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H04Q3/0008 1 {using relay selectors in the switching stages}
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H04Q3/0012 2 {in which the relays are arranged in a matrix configuration}
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H04Q3/0016 1 {Arrangements providing connection between exchanges}
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H04Q3/002 2 {Details}
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H04Q3/0025 2 {Provisions for signalling}
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H04Q3/0029 2 {Provisions for intelligent networking}
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H04Q3/0033 3 {customer-controlled}
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H04Q3/0037 3 {involving call modelling techniques, e.g. modifications to the basic call state model [BCSM]}
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H04Q3/0041 3 {involving techniques for avoiding interaction of call service features}
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H04Q3/0045 3 {involving hybrid, i.e. a mixture of public and private, or multi-vendor systems}
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H04Q3/005 3 {Personal communication services, e.g. provisions for portability of subscriber numbers}
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H04Q3/0054 3 {Service creation techniques}
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H04Q3/0058 4 {using service-independent building blocks (SIBBs) or "primitives"}
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H04Q3/0062 2 {Provisions for network management}
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H04Q3/0066 3 {Bandwidth allocation or management}
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H04Q3/007 3 {customer-controlled}
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H04Q3/0075 3 {Fault management techniques}
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H04Q3/0079 4 {involving restoration of networks, e.g. disaster recovery, self-healing networks}
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H04Q3/0083 3 {Network planning or design; Modelling of planned or existing networks}
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H04Q3/0087 3 {Network testing or monitoring arrangements}
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H04Q3/0091 3 {Congestion or overload control}
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H04Q3/0095 3 {Specification, development or application of network management software, e.g. software re-use}
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H04Q3/02 1 Circuit arrangements for selectors responsive to a permutation code
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H04Q3/04 1 Circuit arrangements for receivers of routing digits
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H04Q3/06 2 for group or trunk group selectors
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H04Q3/08 2 for local or long-distance selectors
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H04Q3/10 2 for PBX selectors, i.e. private branch exchange selectors
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H04Q3/12 2 for line selectors providing transfer of routing digits
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H04Q3/14 2 for two-way operation selectors
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H04Q3/16 2 for marking-switches
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H04Q3/18 1 Circuit arrangements for first stage of hunting switching
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H04Q3/20 2 for preselectors
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H04Q3/22 3 comprising common calling and disconnecting circuit
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H04Q3/24 2 for line finders
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H04Q3/26 3 comprising common calling and disconnecting circuit
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H04Q3/28 3 comprising main groups and subgroups
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H04Q3/30 2 Selector finders, i.e. allotters
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H04Q3/32 1 Circuit arrangements for second or subsequent stages of hunting switching
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H04Q3/34 2 for the second preselection stage
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H04Q3/36 2 for the second line-finder stage
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H04Q3/38 2 for stages after the group selector stage
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H04Q3/40 2 for stages after the line selector, e.g. for extension selector
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H04Q3/42 1 Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
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H04Q3/44 2 using revertive control
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H04Q3/46 2 using signals other than revertive impulses
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H04Q3/47 2 using translators
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H04Q3/48 2 using markers
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H04Q3/49 3 for end-to-end marking
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H04Q3/495 3 for routing connecting paths
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H04Q3/52 2 using static devices in switching stages, e.g. electronic switching arrangements
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H04Q3/521 3 {using semiconductors in the switching stages}
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H04Q3/523 4 {Details}
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H04Q3/525 3 {using tubes in the switching stages}
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H04Q3/526 3 {Optical switching systems}
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H04Q3/528 4 {Details}
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H04Q3/54 2 in which the logic circuitry controlling the exchange is centralised
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H04Q3/542 3 {Logic circuits or arrangements therefor}
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H04Q3/545 3 using a stored programme
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H04Q3/54508 4 {Configuration, initialisation}
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H04Q3/54516 5 {Initialization, software or data downloading (G06F9/445 takes precedence)}
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H04Q3/54525 5 {Features introduction}
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H04Q3/54533 5 {Configuration data, translation, passwords, databases}
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H04Q3/54541 4 {using multi-processor systems}
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H04Q3/5455 5 {Multi-processor, parallelism, distributed systems}
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H04Q3/54558 5 {Redundancy, stand-by}
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H04Q3/54566 5 {Intelligent peripherals, adjunct processors}
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H04Q3/54575 4 {Software application}
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H04Q3/54583 5 {Software development, e.g. procedural, object oriented, software generation, software testing}
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H04Q3/54591 5 {Supervision, e.g. fault localisation, traffic measurements, avoiding errors, failure recovery, monitoring, statistical analysis}
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H04Q3/55 3 using wired logic circuitry
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H04Q3/552 4 {Wired circuits or arrangements therefor}
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H04Q3/555 4 being comprised by electro-magnetic devices
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H04Q3/56 2 in which the control signals are multiplexed
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H04Q3/58 1 Arrangements providing connection between main exchange and sub-exchange or satellite
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H04Q3/60 2 for connecting to satellites or concentrators which connect one or more exchange lines with a group of local lines
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H04Q3/602 3 {Circuit arrangements therefor}
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H04Q3/605 3 {Arrangements in the satellite or concentrator}
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H04Q3/607 4 {Details}
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H04Q3/62 2 for connecting to private branch exchanges
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H04Q3/622 3 {Circuit arrangements therefor}
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H04Q3/625 3 {Arrangements in the private branch exchange}
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H04Q3/627 4 {Details}
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H04Q3/64 1 Distributing or queueing
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H04Q3/645 2 {Circuit arrangements therefor}
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H04Q3/66 2 Traffic distributors
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H04Q3/665 3 {Circuit arrangements therefor}
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H04Q3/68 2 Grouping or interlacing selector groups or stages
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H04Q3/685 3 {Circuit arrangements therefor}
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H04Q3/70 1 Identification of class of calling subscriber
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H04Q3/72 1 Finding out and indicating number of calling subscriber
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H04Q3/74 2 Identification of subscriber calling from a party-line
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H04Q3/76 1 Translation from the called subscriber's number to the outgoing or incoming control information
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H04Q3/78 1 Temporary storage of information of calling or called subscriber (intermediate storage means for telegraphic communication H04L13/08)
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H04Q5/00 0 Selecting arrangements wherein two or more subscriber stations are connected by the same line to the exchange
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H04Q5/02 1 with direct connection for all subscribers, i.e. party-line systems (H04Q5/24 takes precedence)
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H04Q5/04 2 Signalling by currents in one or other or both line wires or additional wires
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H04Q5/06 2 Signalling by amplitude or polarity of dc
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H04Q5/08 2 Signalling by continuous ac
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H04Q5/10 3 using single frequencies for different subscribers
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H04Q5/12 3 using combinations of frequencies
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H04Q5/14 2 Signalling by pulses
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H04Q5/16 3 by predetermined number of pulses
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H04Q5/18 1 with indirect connection, i.e. through subordinate switching centre
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H04Q5/20 2 the subordinate centre permitting interconnection of subscribers connected thereto
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H04Q5/22 2 the subordinate centre not permitting interconnection of subscribers connected thereto
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H04Q5/24 1 for two-party-line systems
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H04Q5/245 2 {Circuit arrangements in which for one subscriber low frequency speech and/or signalling signals proceed on the line, while for the other subscriber the low frequency speech and/or signalling signals are modulated upon a high frequency carrier signal}
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H04Q9/00 0 Arrangements in telecontrol or telemetry systems for selectively calling a substation from a main station, in which substation desired apparatus is selected for applying a control signal thereto or for obtaining measured values therefrom
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H04Q9/02 1 Automatically-operated arrangements
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H04Q9/04 1 Arrangements for synchronous operation
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H04Q9/06 1 Calling by using amplitude or polarity of dc
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H04Q9/08 1 Calling by using continuous ac
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H04Q9/10 2 using single different frequencies
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H04Q9/12 2 using combinations of frequencies
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H04Q9/14 1 Calling by using pulses
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H04Q9/16 2 by predetermined number of pulses
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H04Q11/00 0 Selecting arrangements for multiplex systems (multiplex systems H04J)
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H04Q11/0001 1 {using optical switching}
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H04Q11/0003 2 {Details}
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H04Q11/0005 2 {Switch and router aspects}
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H04Q2011/0007 3 {Construction}
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H04Q2011/0009 4 {using wavelength filters}
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H04Q2011/0011 4 {using wavelength conversion}
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H04Q2011/0013 4 {using gating amplifiers}
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H04Q2011/0015 4 {using splitting combining}
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H04Q2011/0016 4 {using wavelength multiplexing or demultiplexing}
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H04Q2011/0018 4 {using tunable transmitters or receivers}
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H04Q2011/002 4 {using optical delay lines or optical buffers or optical recirculation}
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H04Q2011/0022 4 {using fibre gratings}
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H04Q2011/0024 4 {using space switching}
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H04Q2011/0026 4 {using free space propagation (e.g. lenses, mirrors)}
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H04Q2011/0028 5 {using holograms}
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H04Q2011/003 5 {using switches based on microelectro-mechanical systems [MEMS]}
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H04Q2011/0032 4 {using static wavelength routers (e.g. arrayed waveguide grating router [AWGR] )}
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H04Q2011/0033 4 {using time division switching}
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H04Q2011/0035 4 {using miscellaneous components, e.g. circulator, polarisation, acousto/thermo optical}
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H04Q2011/0037 3 {Operation}
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H04Q2011/0039 4 {Electrical control}
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H04Q2011/0041 4 {Optical control}
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H04Q2011/0043 4 {Fault tolerance}
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H04Q2011/0045 4 {Synchronisation}
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H04Q2011/0047 4 {Broadcast; Multicast}
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H04Q2011/0049 4 {Crosstalk reduction; Noise; Power budget}
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H04Q2011/005 4 {Arbitration and scheduling}
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H04Q2011/0052 3 {Interconnection of switches}
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H04Q2011/0054 4 {Distribute-route}
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H04Q2011/0056 4 {Clos}
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H04Q2011/0058 4 {Crossbar; Matrix}
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H04Q2011/006 4 {Full mesh}
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H04Q11/0062 2 {Network aspects}
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H04Q2011/0064 3 {Arbitration, scheduling or medium access control aspects}
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H04Q11/0066 3 {Provisions for optical burst or packet networks}
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H04Q11/0067 3 {Provisions for optical access or distribution networks, e.g. Gigabit Ethernet Passive Optical Network (GE-PON), ATM-based Passive Optical Network (A-PON), PON-Ring}
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H04Q2011/0069 3 {using dedicated optical channels}
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H04Q11/0071 3 {Provisions for the electrical-optical layer interface}
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H04Q2011/0073 3 {Provisions for forwarding or routing, e.g. lookup tables}
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H04Q2011/0075 3 {Wavelength grouping or hierarchical aspects}
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H04Q2011/0077 3 {Labelling aspects, e.g. multiprotocol label switching [MPLS], G-MPLS, MPAS}
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H04Q2011/0079 3 {Operation or maintenance aspects}
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H04Q2011/0081 4 {Fault tolerance; Redundancy; Recovery; Reconfigurability}
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H04Q2011/0083 4 {Testing; Monitoring}
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H04Q2011/0084 3 {Quality of service aspects}
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H04Q2011/0086 3 {Network resource allocation, dimensioning or optimisation}
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H04Q2011/0088 3 {Signalling aspects}
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H04Q2011/009 3 {Topology aspects}
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H04Q2011/0092 4 {Ring}
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H04Q2011/0094 4 {Star}
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H04Q2011/0096 4 {Tree}
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H04Q2011/0098 4 {Mesh}
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H04Q11/02 1 for frequency-division multiplexing {(H04Q11/0001 takes precedence)}
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H04Q11/023 2 {using a stored programme control}
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H04Q11/026 3 {Details}
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H04Q11/04 1 for time-division multiplexing {(H04Q11/0001 takes precedence)}
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H04Q11/0407 2 {using a stored programme control}
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H04Q11/0414 3 {Details}
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H04Q11/0421 2 {Circuit arrangements therefor}
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H04Q11/0428 2 {Integrated services digital network, i.e. systems for transmission of different types of digitised signals, e.g. speech, data, telecentral, television signals}
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H04Q11/0435 3 {Details}
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H04Q11/0442 4 {Exchange access circuits}
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H04Q11/045 4 {Selection or connection testing arrangements}
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H04Q11/0457 4 {Connection protocols}
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H04Q11/0464 4 {Primary rate access circuits}
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H04Q11/0471 4 {Terminal access circuits}
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H04Q11/0478 3 {Provisions for broadband connections}
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H04Q11/0485 4 {Circuit arrangements therefor}
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H04Q11/0492 5 {Details}
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H04Q11/06 2 Time-space-time switching
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H04Q11/08 2 Time only switching
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H04Q2201/00 0 Constructional details of selecting arrangements
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H04Q2201/02 1 Details of frames
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H04Q2201/04 1 Modular construction
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H04Q2201/06 1 Cooling arrangements
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H04Q2201/08 1 Pivotable parts
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H04Q2201/10 1 Housing details
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H04Q2201/12 1 Printed circuits
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H04Q2201/14 1 Screening, grounding or crosstalk reduction details
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H04Q2201/16 1 Coaxial cable connectors
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H04Q2201/18 1 Rails
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H04Q2201/80 1 in specific systems
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H04Q2201/802 2 in data transmission systems
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H04Q2201/804 2 in optical transmission systems
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H04Q2201/806 2 in PBX or KTS systems
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H04Q2201/808 2 in wireless transmission systems
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H04Q2209/00 0 Arrangements in telecontrol or telemetry systems
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H04Q2209/10 1 using a centralized architecture
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H04Q2209/20 1 using a distributed architecture
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H04Q2209/25 2 using a mesh network, e.g. a public urban network such as public lighting, bus stops or traffic lights
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H04Q2209/30 1 using a wired architecture
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H04Q2209/40 1 using a wireless architecture
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H04Q2209/43 2 using wireless personal area networks [WPAN], e.g. 802.15, 802.15.1, 802.15.4, Bluetooth or ZigBee
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H04Q2209/47 2 using RFID associated with sensors
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H04Q2209/50 1 using a mobile data collecting device, e.g. walk by or drive by
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H04Q2209/60 1 for transmitting utility meters data, i.e. transmission of data from the reader of the utility meter
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H04Q2209/70 1 Arrangements in the main station, i.e. central controller
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H04Q2209/75 2 by polling or interrogating the sub-stations
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H04Q2209/753 3 where the polling of the sub-stations is synchronous
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H04Q2209/756 3 where the polling of the sub-stations is cyclic, e.g. round-robin
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H04Q2209/80 1 Arrangements in the sub-station, i.e. sensing device
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H04Q2209/82 2 where the sensing device takes the initiative of sending data
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H04Q2209/823 3 where the data is sent when the measured values exceed a threshold, e.g. sending an alarm
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H04Q2209/826 3 where the data is sent periodically
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H04Q2209/84 2 Measuring functions
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H04Q2209/845 3 where the measuring is synchronized between sensing devices
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H04Q2209/86 2 Performing a diagnostic of the sensing device
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H04Q2209/88 2 Providing power supply at the sub-station
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H04Q2209/883 3 where the sensing device enters an active or inactive mode
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H04Q2209/886 3 using energy harvesting, e.g. solar, wind or mechanical
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H04Q2213/00 0 Indexing scheme relating to selecting arrangements in general and for multiplex systems
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H04Q2213/001 1 Motorselectors
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H04Q2213/002 1 Graphical representation
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H04Q2213/003 1 Constructional details
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H04Q2213/011 1 Periodic optical structures, e.g. gratings, holograms
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H04Q2213/012 1 Tunable opticalo systems
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H04Q2213/013 1 Optical shutters, e.g. LCD arrays
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H04Q2213/014 1 Optical storage, not delay lines
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H04Q2213/015 1 3D-optical arrangement
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H04Q2213/016 1 Optical subcarrier modulation
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H04Q2213/017 1 Optical polarisation
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H04Q2213/02 1 Relay switches
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H04Q2213/03 1 PAM
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H04Q2213/031 1 PCM
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H04Q2213/032 1 Delta modulation
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H04Q2213/033 1 Other modulation methods
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H04Q2213/034 1 Codec; PCM compression
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H04Q2213/036 1 Series parallel conversion; Parallel bit transmission
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H04Q2213/037 1 Resonant transfer; Sample and hold
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H04Q2213/038 1 Optical modulation
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H04Q2213/04 1 Coordinate switches; Crossbar switches
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H04Q2213/042 1 Elements placed in matrix relation, not serving as connection switch
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H04Q2213/046 1 Binary switch (Beta element)
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H04Q2213/05 1 Software aspects
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H04Q2213/052 1 Multi-tasking
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H04Q2213/053 1 Priority levels
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H04Q2213/054 1 Expert systems, e.g. neural networks
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H04Q2213/055 1 Linked lists
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H04Q2213/056 1 Software routines, e.g. finite state machines
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H04Q2213/058 1 IRQ
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H04Q2213/061 1 Preselector; Second line switch
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H04Q2213/062 1 Finder switch (e.g. line finder, call finder)
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H04Q2213/063 1 Strowger-switch as finder switch
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H04Q2213/064 1 Cascaded finder or preselector switches
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H04Q2213/065 1 Group selector
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H04Q2213/066 1 Switch with two or more wipersets
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H04Q2213/067 1 Finder switch serving as final selector
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H04Q2213/068 1 Final selector
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H04Q2213/069 1 Panel switches
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H04Q2213/07 1 Call distribution; Call detection; Call signalling by common apparatus
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H04Q2213/072 1 Sequence circuits
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H04Q2213/076 1 Distributing frame; Cross connect
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H04Q2213/08 1 Power supply
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H04Q2213/082 1 Phantom circuits
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H04Q2213/09 1 Subscriber related equipment; Analog terminal
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H04Q2213/091 1 Indication of kind/number of subscriber
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H04Q2213/092 1 Scanning of (subscriber) lines, registers, translators
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H04Q2213/093 1 Personal computer
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H04Q2213/094 1 Range extender
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H04Q2213/095 1 User access; PIN code
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H04Q2213/096 1 Digital subscriber terminal
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H04Q2213/097 1 Numbering
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H04Q2213/098 1 Mobile subscriber
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H04Q2213/099 1 Loop multiplexer (not ISDN BRI/PRI; not 381), e.g. loop splitter
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H04Q2213/10 1 Register
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H04Q2213/101 1 Discriminating selectors
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H04Q2213/102 1 Common translator
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H04Q2213/103 1 Memories
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H04Q2213/104 1 Central control; Computer control
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H04Q2213/106 1 Microcomputer; Microprocessor
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H04Q2213/107 1 Control equipment for part of the connection
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H04Q2213/109 1 Initialising; Downloading of parameters or program routines
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H04Q2213/11 1 Sequence switches
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H04Q2213/12 1 Call indicator, e.g. number indicator
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H04Q2213/121 1 Marker
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H04Q2213/124 1 Pulse distributor
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H04Q2213/13 1 Charging
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H04Q2213/13001 1 Step by step switches
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H04Q2213/13003 1 Constructional details of switching devices
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H04Q2213/1301 1 Optical transmission, optical switches
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H04Q2213/13012 1 Hybrid fiber coax, HFC
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H04Q2213/13016 1 Optical subcarrier modulation
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H04Q2213/1302 1 Relay switches
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H04Q2213/1303 1 Pulse amplitude modulation, PAM
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H04Q2213/13031 1 Pulse code modulation, PCM
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H04Q2213/13034 1 A/D conversion, code compression/expansion
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H04Q2213/13036 1 Serial/parallel conversion, parallel bit transmission
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H04Q2213/13038 1 Optical modulation
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H04Q2213/13039 1 Asymmetrical two-way transmission, e.g. ADSL, HDSL
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H04Q2213/1304 1 Coordinate switches, crossbar, 4/2 with relays, coupling field
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H04Q2213/13046 1 Binary switch, β-element
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H04Q2213/1305 1 Software aspects
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H04Q2213/13051 1 Software generation
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H04Q2213/13052 1 Multitasking
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H04Q2213/13053 1 Priority levels
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H04Q2213/13054 1 Expert system
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H04Q2213/13056 1 Routines, finite state machines
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H04Q2213/13057 1 Object-oriented software
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H04Q2213/13058 1 Interrupt request
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H04Q2213/1307 1 Call setup
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H04Q2213/13072 1 Sequence circuits for call signaling, ACD systems
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H04Q2213/13076 1 Distributing frame, MDF, cross-connect switch
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H04Q2213/1308 1 Power supply
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H04Q2213/13082 1 Power supply via phantom line
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H04Q2213/1309 1 Apparatus individually associated with a subscriber line, line circuits
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H04Q2213/13091 1 CLI, identification of calling line
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H04Q2213/13092 1 Scanning of subscriber lines, monitoring
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H04Q2213/13093 1 Personal computer, PC
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H04Q2213/13094 1 Range extender
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H04Q2213/13095 1 PIN / Access code, authentication
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H04Q2213/13096 1 Digital apparatus individually associated with a subscriber line, digital line circuits
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H04Q2213/13097 1 Numbering, addressing
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H04Q2213/13098 1 Mobile subscriber
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H04Q2213/13099 1 Loop multiplexer
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H04Q2213/131 1 Register
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H04Q2213/13102 1 Common translator
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H04Q2213/13103 1 Memory
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H04Q2213/13104 1 Central control, computer control
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H04Q2213/13106 1 Microprocessor, CPU
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H04Q2213/13107 1 Control equipment for a part of the connection, distributed control, co-processing
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H04Q2213/13109 1 Initializing, personal profile
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H04Q2213/13121 1 Marker
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H04Q2213/13124 1 Pulse distributor
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H04Q2213/1313 1 Metering, billing
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H04Q2213/13134 1 Coin boxes, payphone, prepaid
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H04Q2213/13136 1 Collect call (information service H04Q2213/13376)
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H04Q2213/13138 1 Least cost routing, LCR
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H04Q2213/13139 1 Fraud detection/prevention
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H04Q2213/13141 1 Hunting for free outlet, circuit or channel
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H04Q2213/13144 1 Searching path through number of switching stages or nodes, e.g. revertive blocking
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H04Q2213/13145 1 Rerouting upon failure
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H04Q2213/13146 1 Rerouting upon blocking/overload, rearrangement
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H04Q2213/13148 1 Maximum profit routing
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H04Q2213/13149 1 Change of provider, e.g. network or service
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H04Q2213/1315 1 Call waiting
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H04Q2213/13152 1 Callback
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H04Q2213/13156 1 Automatic digit redialling, automatic call retry
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H04Q2213/1316 1 Service observation, testing
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H04Q2213/13162 1 Fault indication and localisation
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H04Q2213/13163 1 Fault alarm
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H04Q2213/13164 1 Traffic (registration, measurement,...)
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H04Q2213/13166 1 Fault prevention
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H04Q2213/13167 1 Redundant apparatus
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H04Q2213/13168 1 Error Correction
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H04Q2213/13172 1 Supervisory signals
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H04Q2213/13173 1 Busy signals
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H04Q2213/13174 1 Data transmission, file transfer
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H04Q2213/13175 1 Graphical user interface [GUI], WWW interface, visual indication
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H04Q2213/13176 1 Common channel signaling, CCS7
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H04Q2213/13178 1 Control signals
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H04Q2213/13179 1 Fax, still picture
|
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H04Q2213/1318 1 Ringing
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H04Q2213/1319 1 Amplifier, attenuation circuit, echo suppressor
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H04Q2213/13191 1 Repeater
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H04Q2213/13194 1 Four wire connection, transmission
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H04Q2213/13196 1 Connection circuit/link/trunk/junction, bridge, router, gateway
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H04Q2213/13199 1 Modem, modulation
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H04Q2213/132 1 Multiple-zone-metering
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H04Q2213/13201 1 Change-over of service during connection
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H04Q2213/13202 1 Network termination [NT]
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H04Q2213/13203 1 Exchange termination [ET]
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H04Q2213/13204 1 Protocols
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H04Q2213/13205 1 Primary rate access, PRI
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H04Q2213/13206 1 User-to-user signaling, UUS
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H04Q2213/13208 1 Inverse multiplexing, channel bonding, e.g. TSSI aspects
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H04Q2213/13209 1 ISDN
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H04Q2213/13213 1 Counting, timing circuits
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H04Q2213/13214 1 Clock signals
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H04Q2213/13215 1 Code checking, CRC
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H04Q2213/13216 1 Code signals, frame structure
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H04Q2213/13217 1 Cranckback in routing, trombone connection, loopback circuit
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H04Q2213/1322 1 PBX
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H04Q2213/13222 1 PBX circuits in public exchange, centrex
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H04Q2213/13224 1 Off-net subscriber, dial in to/out from network, teleworking
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H04Q2213/1323 1 Party line
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H04Q2213/1324 1 Conference call
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H04Q2213/13242 1 Broadcast, diffusion, multicast, point-to-multipoint (1 : N)
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H04Q2213/13246 1 Instant speaker's algorithm [ISA]
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H04Q2213/13248 1 Multimedia
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H04Q2213/1325 1 Priority service
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H04Q2213/13251 1 Restricted service, class of service
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H04Q2213/13256 1 Call screening
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H04Q2213/1326 1 Consultation call, broker's call, call hold, toggling
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H04Q2213/1327 1 Release and resetting of connection
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H04Q2213/13271 1 Forced release
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H04Q2213/13272 1 Premature release
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H04Q2213/13274 1 Call rejection, call barring
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H04Q2213/1328 1 Call transfer, e.g. in PBX
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H04Q2213/13281 1 Call transfer/forward at night
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H04Q2213/13282 1 Call forward, follow-me, call diversion
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H04Q2213/13284 1 Call tracing
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H04Q2213/13286 1 Direct in-dialling in PBX, DDI
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H04Q2213/13287 1 Wake-up call service
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H04Q2213/13288 1 Closed user groups, CUG
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H04Q2213/1329 1 Asynchronous transfer mode, ATM
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H04Q2213/13291 1 Frequency division multiplexing, FDM
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H04Q2213/13292 1 Time division multiplexing, TDM
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H04Q2213/13293 1 TASI, irregular time division, burst switching
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H04Q2213/13294 1 CDMA, code division multiplexing, i.e. combinations of H04Q2213/13291 and/or H04Q2213/13292 with space division
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H04Q2213/13295 1 Wavelength multiplexing, WDM
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H04Q2213/13296 1 Packet switching, X.25, frame relay
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H04Q2213/13297 1 Coupling different rates in TDM systems, data rate adaptation
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H04Q2213/13298 1 Local loop systems, access network
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H04Q2213/13299 1 Bus
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H04Q2213/133 1 Multiple-time-metering
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H04Q2213/13302 1 Magnetic elements
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H04Q2213/13305 1 Transistors, semiconductors in general
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H04Q2213/13306 1 Ferro-electric elements
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H04Q2213/1331 1 Delay elements, shift registers
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H04Q2213/1332 1 Logic circuits
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H04Q2213/13322 1 Integrated circuits
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H04Q2213/1333 1 Random systems
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H04Q2213/13331 1 Abbreviated dialling
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H04Q2213/13332 1 Broadband, CATV, dynamic bandwidth allocation
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H04Q2213/13333 1 Earth satellites
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H04Q2213/13334 1 Key telephone systems
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H04Q2213/13335 1 Simulation, emulation
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H04Q2213/13336 1 Store & forward, messaging systems (email H04Q2213/13375)
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H04Q2213/13337 1 Picturephone, videotelephony
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H04Q2213/13338 1 Do-not-disturb
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H04Q2213/13339 1 Ciphering, encryption, security
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H04Q2213/1334 1 Configuration within the switch
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H04Q2213/13341 1 Connections within the switch
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H04Q2213/13342 1 Arrangement of switches in the network
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H04Q2213/13343 1 Neural networks
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H04Q2213/13344 1 Overflow
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H04Q2213/13345 1 Intelligent networks, SCP
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H04Q2213/13348 1 Channel/line reservation
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H04Q2213/13349 1 Network management
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H04Q2213/13352 1 Self-routing networks, real-time routing
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H04Q2213/13353 1 Routing table, map memory
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H04Q2213/1336 1 Synchronisation
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H04Q2213/13361 1 Synchronous systems
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H04Q2213/13362 1 Asynchronous systems
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H04Q2213/13363 1 Pulse stuffing, bit stuffing
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H04Q2213/13367 1 Hierarchical multiplexing, add-drop multiplexing
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H04Q2213/1337 1 Operator, emergency services
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H04Q2213/13372 1 Intercepting operator
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H04Q2213/13374 1 Paging
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H04Q2213/13375 1 Electronic mail
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H04Q2213/13376 1 Information service, downloading of information, 0800/0900 services
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H04Q2213/13377 1 Recorded announcement
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H04Q2213/13378 1 Speech recognition, speech analysis
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H04Q2213/1338 1 Inter-exchange connection
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H04Q2213/13381 1 Pair-gain system, digital loop carriers
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H04Q2213/13383 1 Hierarchy of switches, main and subexchange, e.g. satellite exchange
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H04Q2213/13384 1 Inter-PBX traffic, PBX networks, e.g. corporate networks
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H04Q2213/13385 1 Off-net subscriber
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H04Q2213/13386 1 Line concentrator
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H04Q2213/13387 1 Call gapping
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H04Q2213/13388 1 Saturation signaling systems
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H04Q2213/13389 1 LAN, internet
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H04Q2213/1339 1 Fixed association of channels
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H04Q2213/13391 1 Channel assigned to connections
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H04Q2213/13392 1 Channels assigned according to rules
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H04Q2213/13393 1 Time slot switching, T-stage, time slot interchanging, TSI
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H04Q2213/13395 1 Permanent channel, leased line
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H04Q2213/13396 1 Signaling in general, in-band signalling
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H04Q2213/13399 1 Virtual channel/circuits
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H04Q2213/134 1 Coin box
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H04Q2213/13402 1 Data transmission out of voice frequency band (ADSL H04Q2213/13039)
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H04Q2213/13405 1 Dual frequency signaling, DTMF
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H04Q2213/13407 1 Detection of data transmission mode
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H04Q2213/135 1 Service creation
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H04Q2213/13501 1 Feature interactions
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H04Q2213/13502 1 primitives - inc. service-independent building blocks [SIBBs]
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H04Q2213/13503 1 object-oriented systems
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H04Q2213/13504 1 client/server architectures
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H04Q2213/13505 1 management information base [MIB]
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H04Q2213/13511 1 reservation
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H04Q2213/13512 1 800 - freefone
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H04Q2213/13513 1 UPT - personal as opposed to terminal mobility, inc. number portability
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H04Q2213/13514 1 quality of service - inc. grade of service
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H04Q2213/13515 1 authentication, authorisation - fraud prevention
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H04Q2213/13516 1 agents or brokers - user, terminal etc., also OSI agent/managers
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H04Q2213/13517 1 SLEE - service logic execution
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H04Q2213/13521 1 fault management
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H04Q2213/13522 1 traffic management
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H04Q2213/13523 1 bandwidth management, e.g. capacity management
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H04Q2213/13524 1 cost management (least cost H04Q2213/13138)
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H04Q2213/13525 1 GUI - graphical user interface, inc. for service creation
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H04Q2213/13526 1 resource management
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H04Q2213/13527 1 protocols - X.25, TCAP etc.
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H04Q2213/13528 1 SCP architecture
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H04Q2213/13531 1 virtual networks - inc. PVN
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H04Q2213/13532 1 mobile networks
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H04Q2213/13533 1 multivendor and hybrid, e.g. public/private, networks, inc. international
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H04Q2213/13534 1 Internet - WWW, HTML, browsers etc.
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H04Q2213/13535 1 distributed systems - also domains in service creation
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H04Q2213/13541 1 routing
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H04Q2213/13542 1 numbering plans, e.g. number re-allocation
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H04Q2213/13543 1 network planning, configuration management, e.g. for growth
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H04Q2213/13544 1 modeling or simulation, particularly of networks
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H04Q2213/13545 1 monitoring of signaling messages, intelligent network
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H04Q2213/13546 1 Intelligent Peripheral
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H04Q2213/13547 1 subscriber, e.g. profile, database, database access
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H04Q2213/13548 1 call modeling, e.g. Basic Call State Model
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H04Q2213/13561 1 congestion - inc. overflow
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H04Q2213/13562 1 blocking
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H04Q2213/13563 1 call gapping, e.g. to prevent congestion
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H04Q2213/13564 1 load balancing
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H04Q2213/13565 1 restoration, e.g. disaster recovery, self-healing networks
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H04Q2213/13566 1 mediation
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H04Q2213/13567 1 negotiation, management policy, goals
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H04Q2213/136 1 Collect call, e.g. 800 service
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H04Q2213/138 1 Least cost routing
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H04Q2213/14 1 Busy test, e.g. marking busy
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H04Q2213/141 1 Hunting for free outlet, circuit, channel
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H04Q2213/144 1 Searching a free path through cascaded switching stages
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H04Q2213/145 1 Rerouting, e.g. on failure
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H04Q2213/146 1 Rearrangement
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H04Q2213/15 1 Waiting
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H04Q2213/152 1 Automatic call retry
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H04Q2213/156 1 Automatic redialling
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H04Q2213/16 1 Service observation; Fault circuit; Testing
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H04Q2213/161 1 Blocking or cutoff of faulty apparatus, e.g. timed out
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H04Q2213/162 1 Fault indication, e.g. localisation
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H04Q2213/163 1 Fault alarm
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H04Q2213/164 1 Traffic registration; Adaptation of traffic possibilities
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H04Q2213/166 1 Prevention of faults
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H04Q2213/167 1 Redundancy
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H04Q2213/171 1 Number indicating signals (no dial signals)
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H04Q2213/172 1 Supervisory signals
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H04Q2213/173 1 Busy signal
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H04Q2213/174 1 Data transmission
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H04Q2213/175 1 Other signals
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H04Q2213/176 1 Common channel signalling
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H04Q2213/177 1 Number sending signals, e.g. dialling tone, proceed to send
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H04Q2213/178 1 Control signals, e.g. also service connection
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H04Q2213/179 1 Facsimile; Fax, e.g. still picture
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H04Q2213/18 1 Ringing
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H04Q2213/182 1 Ring trip
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H04Q2213/19 1 Echo-cancelling; Hybrid; Amplifier; Attenuator
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H04Q2213/191 1 Repeater
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H04Q2213/192 1 Common amplifier for bidirectional traffic
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H04Q2213/194 1 Four-wire connection or transmission
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H04Q2213/196 1 Connection-circuit; Trunk; Junction circuit
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H04Q2213/197 1 Ping-pong transmission
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H04Q2213/198 1 Temporary associated devices; Pooled adapters
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H04Q2213/199 1 Modem
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H04Q2213/20 1 ISDN
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H04Q2213/201 1 Change-over service
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H04Q2213/202 1 Network termination [NT]
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H04Q2213/203 1 Exchange termination [ET]
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H04Q2213/204 1 ISDN protocol; ISO 7
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H04Q2213/205 1 Primary rate access
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H04Q2213/206 1 User-to-user signalling
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H04Q2213/208 1 Inverse multiplexing; Time slot sequence integrity [TSSI] aspects
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H04Q2213/21 1 Impulse transmission
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H04Q2213/211 1 Impulse correction or reshaping
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H04Q2213/212 1 Absorbing of digits
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H04Q2213/214 1 Phase shifted impulses; Clock signals; Timing
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H04Q2213/215 1 Code checking
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H04Q2213/216 1 Code signals; Framing (not synchronizing)
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H04Q2213/217 1 Setting of switch by means of pulses
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H04Q2213/218 1 Bistable relays, e.g. Ferreed
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H04Q2213/22 1 PBX
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H04Q2213/222 1 PBX circuits in public exchange (Centrex)
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H04Q2213/23 1 Partyline
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H04Q2213/24 1 Conference circuit
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H04Q2213/242 1 Broadcast and multicast (1:N)
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H04Q2213/243 1 Con-cast, e.g. multipoint-point (N:1)
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H04Q2213/246 1 Instant speaker's algorithm [ISA]
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H04Q2213/25 1 Preferential service
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H04Q2213/251 1 Restricted service
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H04Q2213/252 1 Breaking-in on existing connection
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H04Q2213/256 1 Call screening
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H04Q2213/26 1 Call-back
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H04Q2213/27 1 Release
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H04Q2213/271 1 Forced release
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H04Q2213/272 1 Premature release
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H04Q2213/274 1 Call rejection
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H04Q2213/28 1 Call transfer
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H04Q2213/281 1 Prepared call transfer, e.g. night service, intercepting service
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H04Q2213/282 1 Call forwarding
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H04Q2213/284 1 Call tracing
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H04Q2213/286 1 Direct inward dialling [PBX]
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H04Q2213/287 1 Call service, e.g. morning call service
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H04Q2213/29 1 ATM
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H04Q2213/291 1 Frequency division multiplex
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H04Q2213/292 1 Time (de)multiplexing
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H04Q2213/293 1 Irregular time switching, e.g. TASI; Burst switching
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H04Q2213/294 1 Other multiplexing systems, e.g. codemultiplex, TDM, FDM, FDM and Space division, TDM and Space division
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H04Q2213/295 1 Wavelength division multiplex
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H04Q2213/296 1 Packet switching
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H04Q2213/297 1 Coupling circuits between different (rate) TDM systems
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H04Q2213/298 1 Loop or ring system
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H04Q2213/299 1 Bus
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H04Q2213/301 1 Tubes and other non-linear elements with 2 electrodes, e.g. diodes
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H04Q2213/302 1 Magnetic elements
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H04Q2213/303 1 Tubes and other non-linear elements with more than two electrodes
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H04Q2213/304 1 Superconductors; Thermistors; Varistors
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H04Q2213/305 1 Transistors
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H04Q2213/306 1 Ferro-electric elements
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H04Q2213/307 1 Hall elements
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H04Q2213/308 1 Photo conductors; Photo elements
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H04Q2213/31 1 Delay devices; Circuits, e.g. shift memories
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H04Q2213/32 1 Logic elements
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H04Q2213/322 1 Integrated circuit
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H04Q2213/33 1 Special systems; Special service
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H04Q2213/331 1 Abbreviated dialing
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H04Q2213/332 1 Broadband system
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H04Q2213/333 1 Systems with earth-satellites
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H04Q2213/334 1 Key telephone system
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H04Q2213/335 1 Simulation
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H04Q2213/336 1 Store and forward, e.g. message switching
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H04Q2213/337 1 Picturephone
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H04Q2213/338 1 Do not disturb
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H04Q2213/339 1 Ciphering/encryption
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H04Q2213/34 1 General scheme; Position of components in an exchange
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H04Q2213/341 1 Contactbank connections
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H04Q2213/342 1 General scheme; Position of exchanges
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H04Q2213/343 1 Neural network
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H04Q2213/344 1 Overflow
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H04Q2213/345 1 Intelligent network
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H04Q2213/346 1 Switch with inverted grouping
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H04Q2213/347 1 Nodal network
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H04Q2213/348 1 Reservation of lines/channels
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H04Q2213/349 1 Network management; Expert system
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H04Q2213/35 1 Separate control and speech paths, e.g. route-searching planes
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H04Q2213/352 1 Self-routing switch
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H04Q2213/353 1 Map memory
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H04Q2213/36 1 Synchronisation
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H04Q2213/361 1 Synchronous system
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H04Q2213/362 1 Asynchronous system
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H04Q2213/363 1 Bit or pulse stuffing
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H04Q2213/366 1 Integrated systems, e.g. transparency
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H04Q2213/367 1 Multiple multiplexing; Hierarchical multiplexing
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H04Q2213/37 1 Operator
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H04Q2213/372 1 Intervention by operator; Intercepting operator
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H04Q2213/374 1 Paging
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H04Q2213/375 1 Electronic mail
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H04Q2213/376 1 Information service
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H04Q2213/377 1 Recorded announcement
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H04Q2213/378 1 Speech recognition; Speech analysis
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H04Q2213/38 1 Interexchange connections, e.g. connections of different kinds of networks
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H04Q2213/381 1 Pair gain system
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H04Q2213/382 1 Provisions for interexchange traffic in the local exchange
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H04Q2213/383 1 Main and subexchange, e.g. satellite exchanges
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H04Q2213/384 1 Inter-PBX traffic; PBX networks
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H04Q2213/385 1 Traffic in PBX to and from public exchange
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H04Q2213/386 1 Line concentrator
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H04Q2213/388 1 Saturation signalling system
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H04Q2213/39 1 Channels assigned to subscribers
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H04Q2213/391 1 Channel allocation to connections
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H04Q2213/392 1 Channel allocation - special rules
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H04Q2213/393 1 Channel interchanging, e.g. time slot switching
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H04Q2213/394 1 Channel assignment without time slot switching
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H04Q2213/395 1 (Semi)permanent channels, e.g. leased lines
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H04Q2213/396 1 Signalling in general; Special register channel
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H04Q2213/399 1 Virtual channel allocation
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H04Q2213/401 1 DC and voltages of different kinds or values
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H04Q2213/402 1 AC outside voice band
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H04Q2213/403 1 Voice frequency
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H04Q2213/405 1 Voice frequency current used for digit selection
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H04Q2213/407 1 Push-button dialling (not H04Q2213/405)
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H04R LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS (generating mechanical vibrations in general B06B; transducers for measuring particular variables G01; transducers in clocks G04; producing sounds with frequency not determined by supply frequency G10K; transducers in recording or reproducing heads G11B; transducers in motors H02)
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H04R1/00 0 Details of transducers, {loudspeakers or microphones}
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H04R1/005 1 {using digitally weighted transducing elements}
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H04R1/02 1 Casings; Cabinets {; Supports therefor;} Mountings therein (H04R1/28 takes precedence {; attachments for microphones H04R1/08; mounting of transducers in earpieces H04R1/1075})
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H04R1/021 2 {incorporating only one transducer}
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H04R1/023 2 {Screens for loudspeakers}
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H04R1/025 2 {Arrangements for fixing loudspeaker transducers, e.g. in a box, furniture}
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H04R1/026 2 {Supports for loudspeaker casings}
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H04R1/028 2 {associated with devices performing functions other than acoustics, e.g. electric candles}
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H04R1/04 2 Structural association of microphone with electric circuitry therefor (in deaf-aid sets H04R25/00)
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H04R1/06 1 Arranging circuit leads; Relieving strain on circuit leads
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H04R1/08 1 Mouthpieces; {Microphones;} Attachments therefor
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H04R1/083 2 {Special constructions of mouthpieces}
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H04R1/086 3 {Protective screens, e.g. all weather or wind screens}
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H04R1/10 1 Earpieces; Attachments therefor {; Earphones; Monophonic headphones (H04R1/28 takes precedence; stereophonic headphones H04R5/033)}
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H04R1/1008 2 {Earpieces of the supra-aural or circum-aural type}
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H04R1/1016 2 {Earpieces of the intra-aural type}
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H04R1/1025 2 {Accumulators or arrangements for charging (secondary cells per se H01M10/00; charging in general H02J7/00)}
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H04R1/1033 2 {Cables or cables storage, e.g. cable reels (cord reels per se H02G11/02; arrangements for storing and repeatedly paying-out and re-storing lengths of conductors or cables B65H75/34; extensible conductors or cables, e.g. self-coiling cords H01B7/06)}
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H04R1/1041 2 {Mechanical or electronic switches, or control elements (switches in general H01H)}
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H04R1/105 2 {Earpiece supports, e.g. ear hooks (for stereophonic headphones H04R5/0335)}
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H04R1/1058 2 {Manufacture or assembly}
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H04R1/1066 3 {Constructional aspects of the interconnection between earpiece and earpiece support (earpiece support for monophonic headphones H04R1/105; earpiece support for stereophonic headphones H04R5/0335)}
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H04R1/1075 3 {Mountings of transducers in earphones or headphones}
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H04R1/1083 2 {Reduction of ambient noise (active noise reduction per se G10K11/175; protective devices for the ear, e.g. providing acoustic protection A61F11/06)}
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H04R1/1091 2 {Details not provided for in groups H04R1/1008 - H04R1/1083}
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H04R1/12 1 Sanitary or hygienic devices for mouthpieces or earpieces, e.g. for protecting against infection
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H04R1/14 1 Throat mountings for microphones
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H04R1/16 1 Mounting or connecting stylus to transducer with or without damping means
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H04R1/18 2 Holders for styli; Mounting holders on transducers
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H04R1/20 1 Arrangements for obtaining desired frequency or directional characteristics (for stereophonic purpose H04R5/00)
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H04R1/22 2 for obtaining desired frequency characteristic only (circuit for combining transducers having different responses H04R3/00 {for hearing aids H04R25/407})
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H04R1/222 3 {for microphones (H04R1/24, H04R1/26 take precedence)}
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H04R1/225 3 {for telephonic receivers}
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H04R1/227 3 {using transducers reproducing the same frequency band}
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H04R1/24 3 Structural combinations of separate transducers or of two parts of the same transducer and responsive respectively to two or more frequency ranges
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H04R1/245 4 {of microphones}
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H04R1/26 3 Spatial arrangements of separate transducers responsive to two or more frequency ranges
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H04R1/265 4 {of microphones}
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H04R1/28 3 Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means {(combinations of transducers with horns, i.e. front-loaded horns H04R1/30)}
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H04R1/2803 4 {for loudspeaker transducers}
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H04R1/2807 4 {Enclosures comprising vibrating or resonating arrangements (for the reduction of undesired resonances or vibrations H04R1/2869)}
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H04R1/2811 5 {for loudspeaker transducers}
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H04R1/2815 5 {of the bass reflex type}
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H04R1/2819 6 {for loudspeaker transducers}
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H04R1/2823 6 {Vents, i.e. ports, e.g. shape thereof or tuning thereof with damping material (number or position of ports H04R1/2815; vents in bandpass type enclosures H04R1/2846)}
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H04R1/2826 7 {for loudspeaker transducers}
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H04R1/283 5 {using a passive diaphragm}
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H04R1/2834 6 {for loudspeaker transducers}
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H04R1/2838 5 {of the bandpass type}
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H04R1/2842 6 {for loudspeaker transducers}
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H04R1/2846 6 {Vents, i.e. ports, e.g. shape thereof or tuning thereof with damping material (number or position of ports H04R1/2838; vents in bass reflex type enclosures H04R1/2823)}
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H04R1/2849 7 {for loudspeaker transducers}
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H04R1/2853 5 {using an acoustic labyrinth or a transmission line}
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H04R1/2857 6 {for loudspeaker transducers}
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H04R1/2861 5 {using a back-loaded horn}
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H04R1/2865 6 {for loudspeaker transducers}
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H04R1/2869 4 {Reduction of undesired resonances, i.e. standing waves within enclosure, or of undesired vibrations, i.e. of the enclosure itself}
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H04R1/2873 5 {for loudspeaker transducers}
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H04R1/2876 5 {by means of damping material, e.g. as cladding (damping material for tuning desired resonances H04R1/2807, e.g. in vents H04R1/2823, H04R1/2846)}
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H04R1/288 6 {for loudspeaker transducers}
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H04R1/2884 5 {by means of the enclosure structure, i.e. strengthening or shape of the enclosure (by means of Helmholtz resonators H04R1/2869)}
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H04R1/2888 6 {for loudspeaker transducers}
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H04R1/2892 5 {Mountings or supports for transducers}
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H04R1/2896 6 {for loudspeaker transducers}
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H04R1/30 3 Combinations of transducers with horns, e.g. with mechanical matching means {, i.e. front-loaded horns}(horns in general G10K; {transducer enclosures or mountings using a back-loaded horn H04R1/2861; application of horns as guiding means to obtain a predetermined directivity characteristic H04R1/345})
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H04R1/32 2 for obtaining desired directional characteristic only {(specially adapted for hearing aids H04R25/40)}
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H04R1/323 3 {for loudspeakers (H04R1/34 and H04R1/40 take precedence)}
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H04R1/326 3 {for microphones (H04R1/34 and H04R1/40 take precedence)}
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H04R1/34 3 by using a single transducer with sound reflecting, diffracting, directing or guiding means {(specially adapted for hearing aids H04R25/402)}
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H04R1/342 4 {for microphones}
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H04R1/345 4 {for loudspeakers}
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H04R1/347 5 {for obtaining a phase-shift between the front and back acoustic wave}
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H04R1/36 4 by using a single aperture of dimensions not greater than the shortest operating wavelength
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H04R1/38 4 in which sound waves act upon both sides of a diaphragm and incorporating acoustic phase-shifting means, e.g. pressure-gradient microphone
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H04R1/40 3 by combining a number of identical transducers {(specially adapted for hearing aids H04R25/405)}
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H04R1/403 4 {loud-speakers}
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H04R1/406 4 {microphones}
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H04R1/42 1 Combinations of transducers with fluid-pressure or other non-electrical amplifying means
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H04R1/44 1 Special adaptations for subaqueous use, e.g. for hydrophone
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H04R1/46 1 Special adaptations for use as contact microphones, e.g. on musical instrument, on stethoscope (throat mountings H04R1/14)
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H04R3/00 0 Circuits for transducers {, loudspeakers or microphones}
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H04R3/002 1 {Damping circuit arrangements for transducers, e.g. motional feedback circuits}
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H04R3/005 1 {for combining the signals of two or more microphones (specially adapted for hearing aids H04R25/407)}
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H04R3/007 1 {Protection circuits for transducers}
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H04R3/02 1 for preventing acoustic reaction {, i.e. acoustic oscillatory feedback (specially adapted for hearing aids H04R25/453)}
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H04R3/04 1 for correcting frequency response
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H04R3/06 2 of electrostatic transducers
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H04R3/08 2 of electromagnetic transducers
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H04R3/10 2 of variable resistance microphones
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H04R3/12 1 for distributing signals to two or more loudspeakers {(specially adapted for hearing aids H04R25/407)}
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H04R3/14 2 Cross-over networks
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H04R5/00 0 Stereophonic arrangements (stereophonic pick-ups H04R9/16, H04R11/12, H04R17/08, H04R19/10)
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H04R5/02 1 Spatial or constructional arrangements of loudspeakers
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H04R5/023 2 {in a chair, pillow}
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H04R5/027 1 Spatial or constructional arrangements of microphones, e.g. in dummy heads
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H04R5/033 1 Headphones for stereophonic communication {(details thereof, e.g. relating to batteries, cables or control elements H04R1/10)}
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H04R5/0335 2 {Earpiece support, e.g. headbands or neckrests (for monophonic headphones H04R1/105)}
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H04R5/04 1 Circuit arrangements, {e.g. for selective connection of amplifier inputs/outputs to loudspeakers, for loudspeaker detection, or for adaptation of settings to personal preferences or hearing impairments (combinations of amplifiers H03F3/68; stereophonic systems H04S)}
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H04R7/00 0 Diaphragms for electromechanical transducers (in general F16J3/00); Cones (for musical instruments G10 ){(cones, diaphragms or the like, for emitting or receiving sound in general G10K13/00; Mounting thereof)}
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H04R7/02 1 characterised by the construction
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H04R7/04 2 Plane diaphragms
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H04R7/045 3 {using the distributed mode principle, i.e. whereby the acoustic radiation is emanated from uniformly distributed free bending wave vibration induced in a stiff panel and not from pistonic motion}
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H04R7/06 3 comprising a plurality of sections or layers
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H04R7/08 4 comprising superposed layers separated by air or other fluid
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H04R7/10 4 comprising superposed layers in contact
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H04R7/12 2 Non-planar diaphragms or cones
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H04R7/122 3 {comprising a plurality of sections or layers}
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H04R7/125 4 {comprising a plurality of superposed layers in contact}
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H04R7/127 3 {dome-shaped}
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H04R7/14 3 corrugated, pleated or ribbed
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H04R7/16 1 Mounting or tensioning of diaphragms or cones
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H04R7/18 2 at the periphery
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H04R7/20 3 Securing diaphragm or cone resiliently to support by flexible material, springs, cords, or strands
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H04R7/22 3 Clamping rim of diaphragm or cone against seating
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H04R7/24 2 Tensioning by means acting directly on free portions of diaphragm or cone
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H04R7/26 1 Damping by means acting directly on free portion of diaphragm or cone (air damping H04R1/28)
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H04R9/00 0 Transducers of moving-coil, moving-strip, or moving-wire type
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H04R9/02 1 Details
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H04R9/022 2 {Cooling arrangements}
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H04R9/025 2 {Magnetic circuit}
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H04R9/027 3 {Air gaps using a magnetic fluid}
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H04R9/04 2 Construction, mounting, or centering of coil
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H04R9/041 3 {Centering}
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H04R9/042 4 {by pressurised air}
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H04R9/043 4 {Inner suspension or damper, e.g. spider (outer suspension or surround H04R7/16)}
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H04R9/045 3 {Mounting (H04R9/043 takes precedence)}
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H04R9/046 3 {Construction}
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H04R9/047 4 {in which the windings of the moving coil lay in the same plane}
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H04R9/048 5 {of the ribbon type}
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H04R9/06 1 Loudspeakers
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H04R9/063 2 {using a plurality of acoustic drivers (H04R1/24 and H04R1/403 take precedence)}
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H04R9/066 2 {using the principle of inertia}
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H04R9/08 1 Microphones
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H04R9/10 1 Telephone receivers
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H04R9/12 1 Gramophone pick-ups using a stylus; Recorders using a stylus
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H04R9/14 2 comprising two or more styli or transducers (H04R9/16 takes precedence)
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H04R9/16 2 signals recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
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H04R9/18 1 Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
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H04R11/00 0 Transducers of moving-armature or moving-core type (acoustic diaphragm of magnetisable material directly coacting with electromagnet H04R13/00)
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H04R11/02 1 Loudspeakers
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H04R11/04 1 Microphones
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H04R11/06 1 Telephone receivers
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H04R11/08 1 Gramophone pick-ups using a stylus; Recorders using a stylus
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H04R11/10 2 comprising two or more styli or transducers (H04R11/12 takes precedence)
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H04R11/12 2 signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
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H04R11/14 1 Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
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H04R13/00 0 Transducers having an acoustic diaphragm of magnetisable material directly co-acting with electromagnet
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H04R13/02 1 Telephone receivers
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H04R15/00 0 Magnetostrictive transducers (magnetostrictive elements in general H10N30/00)
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H04R15/02 1 Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
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H04R17/00 0 Piezo-electric transducers; Electrostrictive transducers (piezo-electric or electrostrictive elements in general H10N30/00; details of piezo-electric or electrostrictive motors, generators or positioners {H10N30/00})
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H04R17/005 1 {using a piezo-electric polymer}
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H04R17/02 1 Microphones
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H04R17/025 2 {using a piezo-electric polymer}
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H04R17/04 1 Gramophone pick-ups using a stylus; Recorders using a stylus
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H04R17/06 2 comprising two or more styli or transducers (H04R17/08 takes precedence)
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H04R17/08 2 signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
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H04R17/10 1 Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
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H04R19/00 0 Electrostatic transducers
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H04R19/005 1 {using semiconductor materials}
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H04R19/01 1 characterised by the use of electrets
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H04R19/013 2 {for loudspeakers}
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H04R19/016 2 {for microphones}
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H04R19/02 1 Loudspeakers (H04R19/01 takes precedence)
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H04R19/04 1 Microphones (H04R19/01 takes precedence)
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H04R19/06 1 Gramophone pick-ups using a stylus; Recorders using a stylus (H04R19/01 takes precedence)
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H04R19/08 2 comprising two or more styli or transducers (H04R19/10 takes precedence)
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H04R19/10 2 signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
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H04R21/00 0 Variable-resistance transducers (gaseous resistance transducers H04R23/00; magneto-resistive transducers H04R23/00)
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H04R21/02 1 Microphones
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H04R21/021 2 {with granular resistance material}
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H04R21/023 2 {with more than one granular chamber}
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H04R21/025 2 {disposition of the granular chamber in microphones}
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H04R21/026 2 {in which the sound is perpendicular to the current crossing the transducer material}
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H04R21/028 2 {with a fluid as resistance material}
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H04R21/04 1 Gramophone pick-ups using a stylus; Recorders using a stylus
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H04R23/00 0 Transducers other than those covered by groups H04R9/00 - H04R21/00 {(diaphragms for transducers of the distributed-mode type H04R7/045)}
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H04R23/002 1 {using electrothermic-effect transducer}
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H04R23/004 1 {using ionised gas}
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H04R23/006 1 {using solid state devices (solid state devices per se H01L)}
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H04R23/008 1 {using optical signals for detecting or generating sound}
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H04R23/02 1 Transducers using more than one principle simultaneously
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H04R25/00 0 Deaf-aid sets {, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception (electrical stimulation of auditory nerves to promote the auditory function A61N1/36038; optical stimulation of auditory nerves to promote the auditory function A61N5/0622)}
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H04R25/02 1 adapted to be supported entirely by ear
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H04R25/04 1 comprising pocket amplifiers
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H04R25/30 1 {Monitoring or testing of hearing aids, e.g. functioning, settings, battery power}
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H04R25/305 2 {Self-monitoring or self-testing}
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H04R25/35 1 {using translation techniques}
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H04R25/353 2 {Frequency, e.g. frequency shift or compression}
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H04R25/356 2 {Amplitude, e.g. amplitude shift or compression}
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H04R25/40 1 {Arrangements for obtaining a desired directivity characteristic}
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H04R25/402 2 {using contructional means}
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H04R25/405 2 {by combining a plurality of transducers}
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H04R25/407 2 {Circuits for combining signals of a plurality of transducers}
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H04R25/43 1 {Electronic input selection or mixing based on input signal analysis, e.g. mixing or selection between microphone and telecoil or between microphones with different directivity characteristics (H04R25/407 takes precedence)}
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H04R25/45 1 {Prevention of acoustic reaction, i.e. acoustic oscillatory feedback}
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H04R25/453 2 {electronically}
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H04R25/456 2 {mechanically}
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H04R25/48 1 {using constructional means for obtaining a desired frequency response (H04R25/652 takes precedence)}
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H04R25/50 1 {Customised settings for obtaining desired overall acoustical characteristics}
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H04R25/502 2 {using analog signal processing}
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H04R25/505 2 {using digital signal processing}
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H04R25/507 3 {implemented by neural network or fuzzy logic}
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H04R25/55 1 {using an external connection, either wireless or wired}
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H04R25/552 2 {Binaural}
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H04R25/554 2 {using a wireless connection, e.g. between microphone and amplifier or using Tcoils}
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H04R25/556 2 {External connectors, e.g. plugs or modules (H04R25/607 takes precedence)}
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H04R25/558 2 {Remote control, e.g. of amplification, frequency}
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H04R25/60 1 {Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles (ear wax retarders, e.g. mounting thereof H04R25/654)}
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H04R25/602 2 {of batteries}
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H04R25/603 2 {of mechanical or electronic switches or control elements}
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H04R25/604 2 {of acoustic or vibrational transducers}
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H04R25/606 3 {acting directly on the eardrum, the ossicles or the skull, e.g. mastoid, tooth, maxillary or mandibular bone, or mechanically stimulating the cochlea, e.g. at the oval window}
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H04R25/607 2 {of earhooks}
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H04R25/609 2 {of circuitry (of electronic switches or control elements H04R25/603)}
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H04R25/65 1 {Housing parts, e.g. shells, tips or moulds, or their manufacture}
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H04R25/652 2 {Ear tips; Ear moulds (hybrid ear moulds or post-processing thereof for their customisation H04R25/659)}
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H04R25/654 3 {Ear wax retarders}
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H04R25/656 3 {Non-customized, universal ear tips, i.e. ear tips which are not specifically adapted to the size or shape of the ear or ear canal}
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H04R25/658 2 {Manufacture of housing parts}
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H04R25/659 3 {Post-processing of hybrid ear moulds for customisation, e.g. in-situ curing}
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H04R25/70 1 {Adaptation of deaf aid to hearing loss, e.g. initial electronic fitting}
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H04R25/75 1 {Electric tinnitus maskers providing an auditory perception}
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H04R27/00 0 Public address systems (circuits for preventing acoustic reaction H04R3/02; circuits for distributing signals to loudspeakers H04R3/12; {monitoring or testing arrangements for public address systems H04R29/007}; amplifiers H03F)
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H04R27/02 1 Amplifying systems for the deaf
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H04R27/04 1 Electric megaphones
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H04R29/00 0 Monitoring arrangements; Testing arrangements {(for hearing aids H04R25/30; detection of loudspeaker connection H04R5/04; sound-field adaptation dependent on speaker detection H04S7/308)}
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H04R29/001 1 {for loudspeakers (H04R29/007 takes precedence)}
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H04R29/002 2 {Loudspeaker arrays}
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H04R29/003 2 {of the moving-coil type}
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H04R29/004 1 {for microphones (H04R29/007 takes precedence)}
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H04R29/005 2 {Microphone arrays}
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H04R29/006 3 {Microphone matching}
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H04R29/007 1 {for public address systems (public address systems per se H04R27/00)}
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H04R29/008 1 {Visual indication of individual signal levels (visual indication of stereophonic sound image H04S7/40)}
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H04R31/00 0 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)}
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H04R31/003 1 {for diaphragms or their outer suspension}
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H04R31/006 1 {Interconnection of transducer parts (of diaphragm and outer suspension by moulding H04R31/003)}
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H04R2201/00 0 Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
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H04R2201/003 1 Mems transducers or their use (of the electrostatic type H04R19/005)
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H04R2201/02 1 Details casings, cabinets or mounting therein for transducers covered by H04R1/02 but not provided for in any of its subgroups
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H04R2201/021 2 Transducers or their casings adapted for mounting in or to a wall or ceiling
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H04R2201/023 2 Transducers incorporated in garment, rucksacks or the like
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H04R2201/025 2 Transducer mountings or cabinet supports enabling variable orientation of transducer of cabinet
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H04R2201/028 2 Structural combinations of loudspeakers with built-in power amplifiers, e.g. in the same acoustic enclosure (H04R2499/10 takes precedence; Single (sub)woofer with two or more satellite loudspeakers for mid- and high-frequency band reproduction driven via the (sub)woofer H04R2205/026)
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H04R2201/029 2 Manufacturing aspects of enclosures transducers
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H04R2201/10 1 Details of earpieces, attachments therefor, earphones or monophonic headphones covered by H04R1/10 but not provided for in any of its subgroups
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H04R2201/103 2 Combination of monophonic or stereophonic headphones with audio players, e.g. integrated in the headphone
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H04R2201/105 2 Manufacture of mono- or stereophonic headphone components
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H04R2201/107 2 Monophonic and stereophonic headphones with microphone for two-way hands free communication
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H04R2201/109 2 Arrangements to adapt hands free headphones for use on both ears
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H04R2201/34 1 Directing or guiding sound by means of a phase plug
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H04R2201/40 1 Details of arrangements for obtaining desired directional characteristic by combining a number of identical transducers covered by H04R1/40 but not provided for in any of its subgroups
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H04R2201/401 2 2D or 3D arrays of transducers
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H04R2201/403 2 Linear arrays of transducers
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H04R2201/405 2 Non-uniform arrays of transducers or a plurality of uniform arrays with different transducer spacing
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H04R2203/00 0 Details of circuits for transducers, loudspeakers or microphones covered by H04R3/00 but not provided for in any of its subgroups
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H04R2203/12 1 Beamforming aspects for stereophonic sound reproduction with loudspeaker arrays
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H04R2205/00 0 Details of stereophonic arrangements covered by H04R5/00 but not provided for in any of its subgroups
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H04R2205/021 1 Aspects relating to docking-station type assemblies to obtain an acoustical effect, e.g. the type of connection to external loudspeakers or housings, frequency improvement
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H04R2205/022 1 Plurality of transducers corresponding to a plurality of sound channels in each earpiece of headphones or in a single enclosure
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H04R2205/024 1 Positioning of loudspeaker enclosures for spatial sound reproduction
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H04R2205/026 1 Single (sub)woofer with two or more satellite loudspeakers for mid- and high-frequency band reproduction driven via the (sub)woofer
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H04R2205/041 1 Adaptation of stereophonic signal reproduction for the hearing impaired
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H04R2207/00 0 Details of diaphragms or cones for electromechanical transducers or their suspension covered by H04R7/00 but not provided for in H04R7/00 or in H04R2307/00
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H04R2207/021 1 Diaphragm extensions, not necessarily integrally formed, e.g. skirts, rims, flanges
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H04R2209/00 0 Details of transducers of the moving-coil, moving-strip, or moving-wire type covered by H04R9/00 but not provided for in any of its subgroups
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H04R2209/021 1 Reduction of eddy currents in the magnetic circuit of electrodynamic loudspeaker transducer
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H04R2209/022 1 Aspects regarding the stray flux internal or external to the magnetic circuit, e.g. shielding, shape of magnetic circuit, flux compensation coils
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H04R2209/024 1 Manufacturing aspects of the magnetic circuit of loudspeaker or microphone transducers
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H04R2209/026 1 Transducers having separately controllable opposing diaphragms, e.g. for ring-tone and voice (H04R2400/03 takes precedence)
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H04R2209/027 1 Electrical or mechanical reduction of yoke vibration
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H04R2209/041 1 Voice coil arrangements comprising more than one voice coil unit on the same bobbin
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H04R2209/043 1 Short circuited voice coils driven by induction
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H04R2217/00 0 Details of magnetostrictive, piezo-electric, or electrostrictive transducers covered by H04R15/00 or H04R17/00 but not provided for in any of their subgroups
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H04R2217/01 1 Non-planar magnetostrictive, piezo-electric or electrostrictive benders
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H04R2217/03 1 Parametric transducers where sound is generated or captured by the acoustic demodulation of amplitude modulated ultrasonic waves
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H04R2225/00 0 Details of deaf aids covered by H04R25/00, not provided for in any of its subgroups
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H04R2225/021 1 Behind the ear [BTE] hearing aids
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H04R2225/0213 2 Constructional details of earhooks, e.g. shape, material
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H04R2225/0216 2 BTE hearing aids having a receiver in the ear mould
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H04R2225/023 1 Completely in the canal [CIC] hearing aids
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H04R2225/025 1 In the ear hearing aids [ITE] hearing aids
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H04R2225/31 1 Aspects of the use of accumulators in hearing aids, e.g. rechargeable batteries or fuel cells
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H04R2225/33 1 Aspects relating to adaptation of the battery voltage, e.g. its regulation, increase or decrease
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H04R2225/39 1 Aspects relating to automatic logging of sound environment parameters and the performance of the hearing aid during use, e.g. histogram logging, or of user selected programs or settings in the hearing aid, e.g. usage logging
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H04R2225/41 1 Detection or adaptation of hearing aid parameters or programs to listening situation, e.g. pub, forest
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H04R2225/43 1 Signal processing in hearing aids to enhance the speech intelligibility
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H04R2225/49 1 Reducing the effects of electromagnetic noise on the functioning of hearing aids, by, e.g. shielding, signal processing adaptation, selective (de)activation of electronic parts in hearing aid
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H04R2225/51 1 Aspects of antennas or their circuitry in or for hearing aids
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H04R2225/53 1 Hearing aid for unilateral hearing impairment using Contralateral Routing Of Signals [CROS]
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H04R2225/55 1 Communication between hearing aids and external devices via a network for data exchange
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H04R2225/57 1 Aspects of electrical interconnection between hearing aid parts
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H04R2225/59 1 Arrangements for selective connection between one or more amplifiers and one or more receivers within one hearing aid
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H04R2225/61 1 Aspects relating to mechanical or electronic switches or control elements, e.g. functioning
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H04R2225/67 1 Implantable hearing aids or parts thereof not covered by H04R25/606
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H04R2225/77 1 Design aspects, e.g. CAD, of hearing aid tips, moulds or housings
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H04R2225/81 1 Aspects of electrical fitting of hearing aids related to problems arising from the emotional state of a hearing aid user, e.g. nervousness or unwillingness during fitting
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H04R2225/83 1 Aspects of electrical fitting of hearing aids related to problems arising from growth of the hearing aid user, e.g. children
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H04R2227/00 0 Details of public address [PA] systems covered by H04R27/00 but not provided for in any of its subgroups
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H04R2227/001 1 Adaptation of signal processing in PA systems in dependence of presence of noise
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H04R2227/003 1 Digital PA systems using, e.g. LAN or internet
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H04R2227/005 1 Audio distribution systems for home, i.e. multi-room use
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H04R2227/007 1 Electronic adaptation of audio signals to reverberation of the listening space for PA
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H04R2227/009 1 Signal processing in [PA] systems to enhance the speech intelligibility
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H04R2231/00 0 Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
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H04R2231/001 1 Moulding aspects of diaphragm or surround
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H04R2231/003 1 Manufacturing aspects of the outer suspension of loudspeaker or microphone diaphragms or of their connecting aspects to said diaphragms
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H04R2307/00 0 Details of diaphragms or cones for electromechanical transducers, their suspension or their manufacture covered by H04R7/00 or H04R31/003, not provided for in any of its subgroups
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H04R2307/021 1 Diaphragms comprising cellulose-like materials, e.g. wood, paper, linen
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H04R2307/023 1 Diaphragms comprising ceramic-like materials, e.g. pure ceramic, glass, boride, nitride, carbide, mica and carbon materials
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H04R2307/025 1 Diaphragms comprising polymeric materials
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H04R2307/027 1 Diaphragms comprising metallic materials
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H04R2307/029 1 Diaphragms comprising fibres
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H04R2307/201 1 Damping aspects of the outer suspension of loudspeaker diaphragms by addition of additional damping means
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H04R2307/204 1 Material aspects of the outer suspension of loudspeaker diaphragms
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H04R2307/207 1 Shape aspects of the outer suspension of loudspeaker diaphragms
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H04R2400/00 0 Loudspeakers
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H04R2400/01 1 Transducers used as a loudspeaker to generate sound aswell as a microphone to detect sound
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H04R2400/03 1 Transducers capable of generating both sound as well as tactile vibration, e.g. as used in cellular phones
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H04R2400/07 1 Suspension between moving magnetic core and housing
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H04R2400/11 1 Aspects regarding the frame of loudspeaker transducers
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H04R2400/13 1 Use or details of compression drivers
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H04R2410/00 0 Microphones
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H04R2410/01 1 Noise reduction using microphones having different directional characteristics
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H04R2410/03 1 Reduction of intrinsic noise in microphones
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H04R2410/05 1 Noise reduction with a separate noise microphone
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H04R2410/07 1 Mechanical or electrical reduction of wind noise generated by wind passing a microphone
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H04R2420/00 0 Details of connection covered by H04R, not provided for in its groups
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H04R2420/01 1 Input selection or mixing for amplifiers or loudspeakers (for hearing aids H04R25/43)
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H04R2420/03 1 Connection circuits to selectively connect loudspeakers or headphones to amplifiers
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H04R2420/05 1 Detection of connection of loudspeakers or headphones to amplifiers
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H04R2420/07 1 Applications of wireless loudspeakers or wireless microphones
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H04R2420/09 1 Applications of special connectors, e.g. USB, XLR, in loudspeakers, microphones or headphones
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H04R2430/00 0 Signal processing covered by H04R, not provided for in its groups
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H04R2430/01 1 Aspects of volume control, not necessarily automatic, in sound systems
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H04R2430/03 1 Synergistic effects of band splitting and sub-band processing
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H04R2430/20 1 Processing of the output signals of the acoustic transducers of an array for obtaining a desired directivity characteristic (H04R2203/12 takes precedence)
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H04R2430/21 2 Direction finding using differential microphone array [DMA]
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H04R2430/23 2 Direction finding using a sum-delay beam-former
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H04R2430/25 2 Array processing for suppression of unwanted side-lobes in directivity characteristics, e.g. a blocking matrix
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H04R2440/00 0 Bending wave transducers covered by H04R, not provided for in its groups
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H04R2440/01 1 Acoustic transducers using travelling bending waves to generate or detect sound
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H04R2440/03 1 Resonant bending wave transducer used as a microphone
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H04R2440/05 1 Aspects relating to the positioning and way or means of mounting of exciters to resonant bending wave panels
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H04R2440/07 1 Loudspeakers using bending wave resonance and pistonic motion to generate sound
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H04R2460/00 0 Details of hearing devices, i.e. of ear- or headphones covered by H04R1/10 or H04R5/033 but not provided for in any of their subgroups, or of hearing aids covered by H04R25/00 but not provided for in any of its subgroups
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H04R2460/01 1 Hearing devices using active noise cancellation
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H04R2460/03 1 Aspects of the reduction of energy consumption in hearing devices
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H04R2460/05 1 Electronic compensation of the occlusion effect
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H04R2460/07 1 Use of position data from wide-area or local-area positioning systems in hearing devices, e.g. program or information selection
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H04R2460/09 1 Non-occlusive ear tips, i.e. leaving the ear canal open, for both custom and non-custom tips (H04R2460/11 takes precedence)
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H04R2460/11 1 Aspects relating to vents, e.g. shape, orientation, acoustic properties in ear tips of hearing devices to prevent occlusion
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H04R2460/13 1 Hearing devices using bone conduction transducers
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H04R2460/15 1 Determination of the acoustic seal of ear moulds or ear tips of hearing devices
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H04R2460/17 1 Hearing device specific tools used for storing or handling hearing devices or parts thereof, e.g. placement in the ear, replacement of cerumen barriers, repair, cleaning hearing devices
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H04R2499/00 0 Aspects covered by H04R or H04S not otherwise provided for in their subgroups
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H04R2499/01 1 General technical reviews, overviews, tutorials
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H04R2499/10 1 General applications
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H04R2499/11 2 Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
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H04R2499/13 2 Acoustic transducers and sound field adaptation in vehicles
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H04R2499/15 2 Transducers incorporated in visual displaying devices, e.g. televisions, computer displays, laptops
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H04S STEREOPHONIC SYSTEMS
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H04S1/00 0 Two-channel systems (H04S5/00, H04S7/00 take precedence)
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H04S1/002 1 {Non-adaptive circuits, e.g. manually adjustable or static, for enhancing the sound image or the spatial distribution (control circuits for electronic adaptation of the sound field H04S7/30)}
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H04S1/005 2 {For headphones}
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H04S1/007 1 {in which the audio signals are in digital form (data reduction aspects thereof based on psychoacoustics G10L19/02)}
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H04S3/00 0 Systems employing more than two channels, e.g. quadraphonic (H04S5/00, H04S7/00 take precedence)
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H04S3/002 1 {Non-adaptive circuits, e.g. manually adjustable or static, for enhancing the sound image or the spatial distribution (control circuits for electronic adaptation of the sound field H04S7/30)}
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H04S3/004 2 {For headphones}
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H04S3/006 1 {in which a plurality of audio signals are transformed in a combination of audio signals and modulated signals, e.g. CD-4 systems}
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H04S3/008 1 {in which the audio signals are in digital form, i.e. employing more than two discrete digital channels (data reduction aspects thereof based on psychoacoustics G10L19/02)}
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H04S3/02 1 of the matrix type, i.e. in which input signals are combined algebraically, e.g. after having been phase shifted with respect to each other
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H04S5/00 0 Pseudo-stereo systems, e.g. in which additional channel signals are derived from monophonic signals by means of phase shifting, time delay or reverberation
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H04S5/005 1 {of the pseudo five- or more-channel type, e.g. virtual surround}
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H04S5/02 1 of the pseudo four-channel type, e.g. in which rear channel signals are derived from two-channel stereo signals
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H04S7/00 0 Indicating arrangements; Control arrangements, e.g. balance control
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H04S7/30 1 {Control circuits for electronic adaptation of the sound field}
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H04S7/301 2 {Automatic calibration of stereophonic sound system, e.g. with test microphone}
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H04S7/302 2 {Electronic adaptation of stereophonic sound system to listener position or orientation (H04S7/301 takes precedence)}
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H04S7/303 3 {Tracking of listener position or orientation}
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H04S7/304 4 {For headphones}
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H04S7/305 2 {Electronic adaptation of stereophonic audio signals to reverberation of the listening space (H04S7/301 takes precedence)}
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H04S7/306 3 {For headphones}
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H04S7/307 2 {Frequency adjustment, e.g. tone control (H04S7/301 takes precedence)}
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H04S7/308 2 {Electronic adaptation dependent on speaker or headphone connection}
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H04S7/40 1 {Visual indication of stereophonic sound image}
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H04S2400/00 0 Details of stereophonic systems covered by H04S but not provided for in its groups
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H04S2400/01 1 Multi-channel, i.e. more than two input channels, sound reproduction with two speakers wherein the multi-channel information is substantially preserved
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H04S2400/03 1 Aspects of down-mixing multi-channel audio to configurations with lower numbers of playback channels, e.g. 7.1 -> 5.1 (H04S2400/01 takes precedence)
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H04S2400/05 1 Generation or adaptation of centre channel in multi-channel audio systems
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H04S2400/07 1 Generation or adaptation of the Low Frequency Effect [LFE] channel, e.g. distribution or signal processing
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H04S2400/09 1 Electronic reduction of distortion of stereophonic sound systems
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H04S2400/11 1 Positioning of individual sound objects, e.g. moving airplane, within a sound field (H04S2420/13 takes precedence)
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H04S2400/13 1 Aspects of volume control, not necessarily automatic, in stereophonic sound systems
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H04S2400/15 1 Aspects of sound capture and related signal processing for recording or reproduction
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H04S2420/00 0 Techniques used stereophonic systems covered by H04S but not provided for in its groups
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H04S2420/01 1 Enhancing the perception of the sound image or of the spatial distribution using head related transfer functions [HRTF's] or equivalents thereof, e.g. interaural time difference [ITD] or interaural level difference [ILD]
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H04S2420/03 1 Application of parametric coding in stereophonic audio systems
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H04S2420/05 1 Application of the precedence or Haas effect, i.e. the effect of first wavefront, in order to improve sound-source localisation
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H04S2420/07 1 Synergistic effects of band splitting and sub-band processing
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H04S2420/11 1 Application of ambisonics in stereophonic audio systems
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H04S2420/13 1 Application of wave-field synthesis in stereophonic audio systems
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H04T INDEXING SCHEME RELATING TO STANDARDS FOR ELECTRIC COMMUNICATION TECHNIQUE (CLASS H04)
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H04T2001/00 0 Standards for wireless communication networks
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H04T2001/101 1 Radio Resources
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H04T2001/103 1 Core Network Resources
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H04T2001/105 1 Network/Interface/Protocol Extensions
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H04T2001/107 1 Overlay Network Resources
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H04T2001/109 1 Codecs
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H04T2001/111 1 Terminal
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H04T2001/113 1 SIM, USIM
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H04T2001/201 1 Physical layer functions
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H04T2001/203 1 Traffic; Transport
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H04T2001/205 1 Signalling; Control
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H04T2001/207 1 Mobility
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H04T2001/209 1 Applications
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H04T2001/2091 2 Call related supplementary Services, e.g. Call Forwarding [CF], Cell Barring [CB]
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H04T2001/2093 2 Intelligent Services
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H04T2001/2095 2 Location -, Position -, or Presence Services
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H04T2001/2096 2 Messaging Services
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H04T2001/2098 2 Device and Node specific Features
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H04T2001/211 1 Testing and Conformance
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H04T2001/213 1 Planning
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H04T2001/215 1 Billing; Accounting; Charging
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H04T2001/217 1 Configuration and Fault Management; Operation and Maintenance
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H04T2001/219 1 Interworking
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H04T2001/221 1 Security
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H04T2001/231 1 Architecture; Topology; Principles; Requirements
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H04T2012/00 0 Standards related to data switching networks in general
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H04T2029/00 0 Standards related to data transmission protocols not covered by any of the codes H04T2001/00 - H04T2012/00
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H04T2029/06 1 Internet Standards
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H04W WIRELESS COMMUNICATION NETWORKS (broadcast communication H04H; communication systems using wireless links for non-selective communication, e.g. wireless extensions H04M1/72)
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H04W4/00 0 Services specially adapted for wireless communication networks; Facilities therefor
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H04W4/02 1 Services making use of location information
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H04W4/021 2 Services related to particular areas, e.g. point of interest [POI] services, venue services or geofences
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H04W4/022 3 {with dynamic range variability}
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H04W4/023 2 {using mutual or relative location information between multiple location based services [LBS] targets or of distance thresholds}
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H04W4/024 2 Guidance services
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H04W4/025 2 {using location based information parameters}
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H04W4/026 3 {using orientation information, e.g. compass}
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H04W4/027 3 {using movement velocity, acceleration information}
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H04W4/029 2 Location-based management or tracking services
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H04W4/06 1 Selective distribution of broadcast services, e.g. multimedia broadcast multicast service [MBMS]; Services to user groups; One-way selective calling services
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H04W4/08 2 User group management
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H04W4/10 2 Push-to-Talk [PTT] or Push-On-Call services
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H04W4/12 1 Messaging; Mailboxes; Announcements
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H04W4/14 2 Short messaging services, e.g. short message services [SMS] or unstructured supplementary service data [USSD]
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H04W4/16 1 Communication-related supplementary services, e.g. call-transfer or call-hold
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H04W4/18 1 Information format or content conversion, e.g. adaptation by the network of the transmitted or received information for the purpose of wireless delivery to users or terminals
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H04W4/185 2 {by embedding added-value information into content, e.g. geo-tagging}
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H04W4/20 1 Services signaling; Auxiliary data signalling, i.e. transmitting data via a non-traffic channel
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H04W4/203 2 {for converged personal network application service interworking, e.g. OMA converged personal network services [CPNS]}
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H04W4/21 2 for social networking applications
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H04W4/23 2 for mobile advertising
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H04W4/24 1 Accounting or billing
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H04W4/30 1 Services specially adapted for particular environments, situations or purposes
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H04W4/33 2 for indoor environments, e.g. buildings
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H04W4/35 2 for the management of goods or merchandise
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H04W4/38 2 for collecting sensor information
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H04W4/40 2 for vehicles, e.g. vehicle-to-pedestrians [V2P]
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H04W4/42 3 for mass transport vehicles, e.g. buses, trains or aircraft
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H04W4/44 3 for communication between vehicles and infrastructures, e.g. vehicle-to-cloud [V2C] or vehicle-to-home [V2H]
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H04W4/46 3 for vehicle-to-vehicle communication [V2V]
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H04W4/48 3 for in-vehicle communication
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H04W4/50 1 Service provisioning or reconfiguring
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H04W4/60 1 Subscription-based services using application servers or record carriers, e.g. SIM application toolkits
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H04W4/70 1 Services for machine-to-machine communication [M2M] or machine type communication [MTC]
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H04W4/80 1 Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
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H04W4/90 1 Services for handling of emergency or hazardous situations, e.g. earthquake and tsunami warning systems [ETWS]
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H04W8/00 0 Network data management
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H04W8/005 1 {Discovery of network devices, e.g. terminals}
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H04W8/02 1 Processing of mobility data, e.g. registration information at HLR [Home Location Register] or VLR [Visitor Location Register]; Transfer of mobility data, e.g. between HLR, VLR or external networks
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H04W8/04 2 Registration at HLR or HSS [Home Subscriber Server]
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H04W8/06 2 Registration at serving network Location Register, VLR or user mobility server
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H04W8/065 3 {involving selection of the user mobility server}
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H04W8/08 2 Mobility data transfer
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H04W8/082 3 {for traffic bypassing of mobility servers, e.g. location registers, home PLMNs or home agents}
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H04W8/085 3 {involving hierarchical organized mobility servers, e.g. hierarchical mobile IP [HMIP]}
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H04W8/087 3 {for preserving data network PoA address despite hand-offs}
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H04W8/10 3 between location register and external networks
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H04W8/12 3 between location registers or mobility servers
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H04W8/14 3 between corresponding nodes
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H04W8/16 3 selectively restricting mobility {data} tracking
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H04W8/18 1 Processing of user or subscriber data, e.g. subscribed services, user preferences or user profiles; Transfer of user or subscriber data
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H04W8/183 2 {Processing at user equipment or user record carrier}
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H04W8/186 2 {Processing of subscriber group data}
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H04W8/20 2 Transfer of user or subscriber data
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H04W8/205 3 {Transfer to or from user equipment or user record carrier}
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H04W8/22 1 Processing or transfer of terminal data, e.g. status or physical capabilities
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H04W8/24 2 Transfer of terminal data
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H04W8/245 3 {from a network towards a terminal}
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H04W8/26 1 Network addressing or numbering for mobility support
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H04W8/265 2 {for initial activation of new user}
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H04W8/28 2 Number portability {; Network address portability}
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H04W8/30 1 Network data restoration; {Network data reliability; Network data fault tolerance}
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H04W12/00 0 Security arrangements; Authentication; Protecting privacy or anonymity
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H04W12/009 1 {specially adapted for networks, e.g. wireless sensor networks, ad-hoc networks, RFID networks or cloud networks}
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H04W12/02 1 Protecting privacy or anonymity, e.g. protecting personally identifiable information [PII]
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H04W12/03 1 Protecting confidentiality, e.g. by encryption
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H04W12/033 2 of the user plane, e.g. user's traffic
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H04W12/037 2 of the control plane, e.g. signalling traffic
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H04W12/04 1 Key management, e.g. using generic bootstrapping architecture [GBA]
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H04W12/041 2 Key generation or derivation
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H04W12/043 2 using a trusted network node as an anchor
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H04W12/0431 3 Key distribution or pre-distribution; Key agreement
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H04W12/0433 3 Key management protocols
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H04W12/047 2 without using a trusted network node as an anchor
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H04W12/0471 3 Key exchange
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H04W12/06 1 Authentication
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H04W12/062 2 Pre-authentication
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H04W12/065 2 Continuous authentication
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H04W12/068 2 {using credential vaults, e.g. password manager applications or one time password [OTP] applications}
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H04W12/069 2 using certificates or pre-shared keys
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H04W12/08 1 Access security
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H04W12/082 2 using revocation of authorisation
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H04W12/084 2 using delegated authorisation, e.g. open authorisation [OAuth] protocol
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H04W12/086 2 using security domains
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H04W12/088 2 using filters or firewalls
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H04W12/10 1 Integrity
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H04W12/102 2 Route integrity, e.g. using trusted paths
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H04W12/104 2 Location integrity, e.g. secure geotagging
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H04W12/106 2 Packet or message integrity
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H04W12/108 2 Source integrity
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H04W12/12 1 Detection or prevention of fraud
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H04W12/121 2 Wireless intrusion detection systems [WIDS]; Wireless intrusion prevention systems [WIPS]
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H04W12/122 3 Counter-measures against attacks; Protection against rogue devices
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H04W12/125 2 Protection against power exhaustion attacks
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H04W12/126 2 Anti-theft arrangements, e.g. protection against subscriber identity module [SIM] cloning
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H04W12/128 2 Anti-malware arrangements, e.g. protection against SMS fraud or mobile malware
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H04W12/30 1 Security of mobile devices; Security of mobile applications
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H04W12/33 2 using wearable devices, e.g. using a smartwatch or smart-glasses
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H04W12/35 2 {Protecting application or service provisioning, e.g. securing SIM application provisioning}
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H04W12/37 2 Managing security policies for mobile devices or for controlling mobile applications
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H04W12/40 1 Security arrangements using identity modules
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H04W12/42 2 using virtual identity modules
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H04W12/43 2 using shared identity modules, e.g. SIM sharing
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H04W12/45 2 using multiple identity modules
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H04W12/47 2 using near field communication [NFC] or radio frequency identification [RFID] modules
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H04W12/48 2 using secure binding, e.g. securely binding identity modules to devices, services or applications
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H04W12/50 1 Secure pairing of devices
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H04W12/55 2 involving three or more devices, e.g. group pairing
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H04W12/60 1 Context-dependent security
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H04W12/61 2 Time-dependent
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H04W12/63 2 Location-dependent; Proximity-dependent
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H04W12/64 3 using geofenced areas
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H04W12/65 2 Environment-dependent, e.g. using captured environmental data
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H04W12/66 2 {Trust-dependent, e.g. using trust scores or trust relationships}
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H04W12/67 2 Risk-dependent, e.g. selecting a security level depending on risk profiles
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H04W12/68 2 Gesture-dependent or behaviour-dependent
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H04W12/69 2 Identity-dependent
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H04W12/71 3 Hardware identity
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H04W12/72 3 Subscriber identity
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H04W12/73 3 Access point logical identity
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H04W12/75 3 Temporary identity
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H04W12/76 3 Group identity
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H04W12/77 3 Graphical identity
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H04W12/79 3 Radio fingerprint
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H04W12/80 1 Arrangements enabling lawful interception [LI]
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H04W16/00 0 Network planning, e.g. coverage or traffic planning tools; Network deployment, e.g. resource partitioning or cells structures
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H04W16/02 1 Resource partitioning among network components, e.g. reuse partitioning
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H04W16/04 2 Traffic adaptive resource partitioning
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H04W16/06 2 Hybrid resource partitioning, e.g. channel borrowing
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H04W16/08 3 Load shedding arrangements
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H04W16/10 2 Dynamic resource partitioning
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H04W16/12 2 Fixed resource partitioning
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H04W16/14 1 Spectrum sharing arrangements {between different networks}
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H04W16/16 2 for PBS [Private Base Station] arrangements
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H04W16/18 1 Network planning tools
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H04W16/20 2 for indoor coverage or short range network deployment
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H04W16/22 1 Traffic simulation tools or models
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H04W16/225 2 {for indoor or short range network}
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H04W16/24 1 Cell structures
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H04W16/26 2 Cell enhancers {or enhancement}, e.g. for tunnels, building shadow
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H04W16/28 2 using beam steering
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H04W16/30 2 Special cell shapes, e.g. doughnuts or ring cells
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H04W16/32 2 Hierarchical cell structures
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H04W24/00 0 Supervisory, monitoring or testing arrangements
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H04W24/02 1 Arrangements for optimising operational condition
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H04W24/04 1 Arrangements for maintaining operational condition
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H04W24/06 1 Testing, {supervising or monitoring} using simulated traffic
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H04W24/08 1 Testing, {supervising or monitoring} using real traffic
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H04W24/10 1 Scheduling measurement reports {; Arrangements for measurement reports}
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H04W28/00 0 Network traffic or resource management
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H04W28/02 1 Traffic management, e.g. flow control or congestion control
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H04W28/0205 2 {at the air interface (dynamic wireless traffic scheduling H04W72/12)}
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H04W28/021 2 {in wireless networks with changing topologies, e.g. ad-hoc networks (self-organizing networks H04W84/18)}
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H04W28/0215 2 {based on user or device properties, e.g. MTC-capable devices (services for machine-to-machine communication [M2M] or machine type communication [MTC] H04W4/70; wireless resource selection or allocation plan definition based on terminal or device properties H04W72/51)}
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H04W28/0221 3 {power availability or consumption}
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H04W28/0226 2 {based on location or mobility (handoff or reselection H04W36/00; mobile application services making use of the location of users or terminals H04W4/02)}
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H04W28/0231 2 {based on communication conditions (dynamic wireless traffic scheduling definition based on channel quality criteria H04W72/54)}
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H04W28/0236 3 {radio quality, e.g. interference, losses or delay}
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H04W28/0242 3 {Determining whether packet losses are due to overload or to deterioration of radio communication conditions}
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H04W28/0247 2 {based on conditions of the access network or the infrastructure network (central resource management H04W28/16)}
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H04W28/0252 2 {per individual bearer or channel (dynamic wireless traffic scheduling H04W72/12)}
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H04W28/0257 3 {the individual bearer or channel having a maximum bit rate or a bit rate guarantee}
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H04W28/0263 3 {involving mapping traffic to individual bearers or channels, e.g. traffic flow template [TFT]}
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H04W28/0268 2 {using specific QoS parameters for wireless networks, e.g. QoS class identifier [QCI] or guaranteed bit rate [GBR] (negotiating SLA or negotiating QoS H04W28/24)}
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H04W28/0273 2 {adapting protocols for flow control or congestion control to wireless environment, e.g. adapting transmission control protocol [TCP] (wireless network protocols or protocol adaptations to wireless operation, e.g. wireless application protocol H04W80/00)}
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H04W28/0278 2 {using buffer status reports (dynamic wireless traffic scheduling definition H04W72/12)}
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H04W28/0284 2 {detecting congestion or overload during communication (monitoring arrangements H04L43/00)}
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H04W28/0289 2 {Congestion control (performing reselection for handling the traffic H04W36/22; load shedding arrangements in network planning H04W16/08; dynamic wireless traffic scheduling H04W72/12)}
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H04W28/0294 2 {forcing collision (non-scheduled or contention based wireless access channel H04W74/08)}
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H04W28/04 2 Error control
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H04W28/06 2 Optimizing {the usage of the radio link}, e.g. header compression, information sizing {, discarding information (system modifying transmission characteristic according to link quality by modifying frame length H04L1/0007; dynamic adaptation of the packet size for flow control or congestion control H04L47/365)}
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H04W28/065 3 {using assembly or disassembly of packets}
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H04W28/08 2 Load balancing or load distribution
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H04W28/0804 3 {between access entities (reselecting a network for handling traffic H04W36/22; wireless resource allocation where an allocation plan is defined based on load H04W72/52)}
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H04W28/0808 4 {between base stations}
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H04W28/0812 5 {of same hierarchy level}
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H04W28/0815 5 {of different hierarchy levels, e.g. Master Evolved Node B [MeNB] or Secondary Evolved node B [SeNB]}
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H04W28/0819 5 {of different Radio Access Technologies [RATs], e.g. LTE or WiFi}
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H04W28/0823 4 {between wireless and wire-based access points, e.g. via LTE and via DSL connected access points}
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H04W28/0827 3 {Triggering entity}
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H04W28/0831 4 {Core entity}
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H04W28/0835 4 {Access entity, e.g. eNB}
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H04W28/0838 4 {User device}
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H04W28/0842 3 {among core entities}
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H04W28/0846 3 {between network providers, e.g. operators (selecting a network or a communication service H04W40/18)}
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H04W28/085 3 {among bearers or channels}
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H04W28/0858 3 {among entities in the uplink}
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H04W28/0867 3 {among entities in the downlink}
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H04W28/0875 3 {to or through Device to Device [D2D] links, e.g. direct-mode links}
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H04W28/0883 3 {between entities in ad-hoc networks}
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H04W28/0892 4 {between different intermediate nodes}
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H04W28/09 3 {Management thereof}
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H04W28/0908 4 {based on time, e.g. for a critical period only}
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H04W28/0917 4 {based on the energy state of entities}
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H04W28/0925 4 {using policies}
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H04W28/0933 5 {based on load-splitting ratios}
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H04W28/0942 5 {based on measured or predicted load of entities- or links}
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H04W28/095 5 {based on usage history, e.g. usage history of devices}
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H04W28/0958 4 {based on metrics or performance parameters}
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H04W28/0967 5 {Quality of Service [QoS] parameters}
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H04W28/0975 6 {for reducing delays}
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H04W28/0983 6 {for optimizing bandwidth or throughput}
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H04W28/0992 4 {based on the type of application}
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H04W28/10 2 Flow control {between communication endpoints}
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H04W28/12 3 using signalling between network elements
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H04W28/14 3 using intermediate storage
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H04W28/16 1 Central resource management; Negotiation of resources or communication parameters, e.g. negotiating bandwidth or QoS [Quality of Service]
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H04W28/18 2 Negotiating wireless communication parameters
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H04W28/20 3 Negotiating bandwidth
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H04W28/22 3 Negotiating communication rate
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H04W28/24 2 Negotiating SLA [Service Level Agreement]; Negotiating QoS [Quality of Service]
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H04W28/26 2 Resource reservation
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H04W36/00 0 Hand-off or reselection arrangements
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H04W36/0005 1 {Control or signalling for completing the hand-off}
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H04W36/0007 2 {for multicast or broadcast services, e.g. MBMS (multicast or broadcast application services H04W4/06; resource management for broadcast services H04W72/30; connection management for selective distribution or broadcast H04W76/40)}
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H04W36/0009 2 {for a plurality of users or terminals, e.g. group communication or moving wireless networks (user group management H04W4/08; processing of subscriber group data H04W8/186)}
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H04W36/0011 2 {for data session or connection}
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H04W36/0016 3 {for hand-off preparation}
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H04W36/0022 3 {for transferring sessions between adjacent core network technologies}
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H04W36/0027 3 {for a plurality of sessions or connections, e.g. multi-call, multi-bearer connections}
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H04W36/0033 3 {with transfer of context information}
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H04W36/0038 4 {of security context information}
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H04W36/0044 4 {of quality context information}
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H04W36/005 2 {involving radio access media independent information, e.g. MIH [Media independent Hand-off]}
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H04W36/0055 2 {Transmission and use of information for re-establishing the radio link}
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H04W36/0058 3 {Transmission of hand-off measurement information, e.g. measurement reports}
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H04W36/0061 3 {of neighbor cell information}
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H04W36/0066 3 {of control information between different types of networks in order to establish a new radio link in the target network}
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H04W36/0069 3 {in case of dual connectivity, e.g. CoMP, decoupled uplink/downlink or carrier aggregation (allocation of physical resources in CoMP or in carrier aggregation H04L5/0035)}
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H04W36/0072 3 {of resource information of target access point}
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H04W36/0077 3 {of access information of target access point}
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H04W36/0079 3 {in case of hand-off failure or rejection}
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H04W36/0083 2 {Determination of parameters used for hand-off, e.g. generation or modification of neighbour cell lists}
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H04W36/00835 3 {Determination of the neighbour cell list}
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H04W36/00837 3 {Determination of triggering parameters for hand-off}
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H04W36/0085 3 {Hand-off measurements}
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H04W36/0088 4 {Scheduling hand-off measurements}
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H04W36/0094 4 {Definition of hand-off measurement parameters}
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H04W36/02 1 Buffering or recovering information during reselection {; Modification of the traffic flow during hand-off}
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H04W36/023 2 {Buffering or recovering information during reselection}
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H04W36/026 2 {Multicasting of data during hand-off}
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H04W36/03 1 {Reselecting a link using a direct mode connection}
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H04W36/04 1 Reselecting a cell layer in multi-layered cells
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H04W36/06 1 Reselecting a communication resource in the serving access point
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H04W36/08 1 Reselecting an access point
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H04W36/10 1 Reselecting an access point controller
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H04W36/12 1 Reselecting a serving backbone network switching or routing node
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H04W36/125 2 {involving different types of service backbone}
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H04W36/14 1 Reselecting a network or an air interface
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H04W36/16 1 Performing reselection for specific purposes
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H04W36/165 2 {for improving the overall network performance (H04W36/18 - H04W36/22 take precedence)}
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H04W36/18 2 for allowing seamless reselection, e.g. soft reselection
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H04W36/20 2 for optimising the interference level
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H04W36/22 2 for handling the traffic
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H04W36/24 1 Reselection being triggered by specific parameters {used to improve the performance of a single terminal}
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H04W36/245 2 {by historical data}
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H04W36/26 2 by agreed or negotiated communication parameters
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H04W36/28 3 involving a plurality of connections, e.g. multi-call, multi-bearer connections
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H04W36/30 2 by measured or perceived connection quality data
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H04W36/305 3 {Reselection due to radio link failure (control signalling for hand-off failure H04W36/0079)}
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H04W36/32 2 by location or mobility data, e.g. speed data
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H04W36/34 1 Reselection control
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H04W36/36 2 by user or terminal equipment
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H04W36/365 3 {by manual user interaction}
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H04W36/38 2 by fixed network equipment
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H04W36/385 3 {of the core network}
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H04W40/00 0 Communication routing or communication path finding
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H04W40/005 1 {Routing actions in the presence of nodes in sleep or doze mode}
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H04W40/02 1 Communication route or path selection, e.g. power-based or shortest path routing
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H04W40/023 2 {Limited or focused flooding to selected areas of a network}
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H04W40/026 2 {Route selection considering the moving speed of individual devices}
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H04W40/04 2 based on wireless node resources
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H04W40/06 3 based on characteristics of available antennas
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H04W40/08 3 based on transmission power
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H04W40/10 3 based on available power or energy
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H04W40/12 2 based on transmission quality or channel quality
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H04W40/125 3 {using a measured number of retransmissions as a link metric}
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H04W40/14 3 based on stability
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H04W40/16 3 based on interference
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H04W40/18 2 based on predicted events
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H04W40/20 2 based on geographic position or location
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H04W40/205 3 {using topographical information, e.g. hills, high rise buildings}
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H04W40/22 2 using selective relaying for reaching a BTS [Base Transceiver Station] or an access point
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H04W40/24 1 Connectivity information management, e.g. connectivity discovery or connectivity update
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H04W40/242 2 {aging of topology database entries}
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H04W40/244 2 {using a network of reference devices, e.g. beaconing}
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H04W40/246 2 {Connectivity information discovery}
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H04W40/248 2 {Connectivity information update}
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H04W40/26 2 for hybrid routing by combining proactive and reactive routing
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H04W40/28 2 for reactive routing
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H04W40/30 2 for proactive routing
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H04W40/32 2 for defining a routing cluster membership
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H04W40/34 1 Modification of an existing route
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H04W40/36 2 due to handover
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H04W40/38 2 adapting due to varying relative distances between nodes
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H04W48/00 0 Access restriction (access security to prevent unauthorised access H04W12/08); Network selection; Access point selection
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H04W48/02 1 Access restriction performed under specific conditions
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H04W48/04 2 based on user or terminal location or mobility data, e.g. moving direction, speed
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H04W48/06 2 based on traffic conditions
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H04W48/08 1 Access restriction or access information delivery, e.g. discovery data delivery (signalling during connection H04W76/00)
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H04W48/10 2 using broadcasted information
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H04W48/12 2 using downlink control channel
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H04W48/14 2 using user query {or user detection}
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H04W48/16 1 Discovering, processing access restriction or access information
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H04W48/17 1 {Selecting a data network PoA [Point of Attachment]}
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H04W48/18 1 Selecting a network or a communication service
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H04W48/20 1 Selecting an access point
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H04W52/00 0 Power management, e.g. TPC [Transmission Power Control], power saving or power classes {(gain control in transmitters or power amplifiers H03G3/3042)}
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H04W52/02 1 Power saving arrangements {(in wired systems H04L12/12; signaling of mobile application services, e.g. low battery notifications H04W4/20)}
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H04W52/0203 2 {in the radio access network or backbone network of wireless communication networks}
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H04W52/0206 3 {in access points, e.g. base stations (access point devices per se H04W88/08)}
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H04W52/0209 2 {in terminal devices (terminal devices per se H04W88/02)}
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H04W52/0212 3 {managed by the network, e.g. network or access point is master and terminal is slave}
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H04W52/0216 4 {using a pre-established activity schedule, e.g. traffic indication frame}
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H04W52/0219 4 {where the power saving management affects multiple terminals}
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H04W52/0222 4 {in packet switched networks}
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H04W52/0225 3 {using monitoring of external events, e.g. the presence of a signal}
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H04W52/0229 4 {where the received signal is a wanted signal}
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H04W52/0232 5 {according to average transmission signal activity}
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H04W52/0235 4 {where the received signal is a power saving command}
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H04W52/0238 4 {where the received signal is an unwanted signal, e.g. interference or idle signal}
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H04W52/0241 4 {where no transmission is received, e.g. out of range of the transmitter}
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H04W52/0245 4 {according to signal strength}
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H04W52/0248 4 {dependent on the time of the day, e.g. according to expected transmission activity}
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H04W52/0251 3 {using monitoring of local events, e.g. events related to user activity}
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H04W52/0254 4 {detecting a user operation or a tactile contact or a motion of the device}
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H04W52/0258 4 {controlling an operation mode according to history or models of usage information, e.g. activity schedule or time of day}
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H04W52/0261 3 {managing power supply demand, e.g. depending on battery level}
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H04W52/0264 4 {by selectively disabling software applications}
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H04W52/0267 4 {by controlling user interface components}
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H04W52/027 5 {by controlling a display operation or backlight unit}
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H04W52/0274 4 {by switching on or off the equipment or parts thereof}
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H04W52/0277 5 {according to available power supply, e.g. switching off when a low battery condition is detected}
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H04W52/028 5 {switching on or off only a part of the equipment circuit blocks}
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H04W52/0283 6 {with sequential power up or power down of successive circuit blocks, e.g. switching on the local oscillator before RF or mixer stages}
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H04W52/0287 4 {changing the clock frequency of a controller in the equipment}
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H04W52/029 5 {reducing the clock frequency of the controller}
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H04W52/0293 5 {having a sub-controller with a low clock frequency switching on and off a main controller with a high clock frequency}
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H04W52/0296 4 {switching to a backup power supply}
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H04W52/04 1 TPC
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H04W52/06 2 TPC algorithms
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H04W52/08 3 Closed loop power control
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H04W52/10 3 Open loop power control
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H04W52/12 3 Outer and inner loops
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H04W52/125 4 {cascaded outer loop power control}
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H04W52/14 3 Separate analysis of uplink or downlink
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H04W52/143 4 {Downlink power control}
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H04W52/146 4 {Uplink power control}
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H04W52/16 3 Deriving transmission power values from another channel
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H04W52/18 2 TPC being performed according to specific parameters
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H04W52/20 3 using error rate
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H04W52/22 3 taking into account previous information or commands
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H04W52/221 4 {using past power control commands}
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H04W52/223 4 {predicting future states of the transmission}
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H04W52/225 4 {Calculation of statistics, e.g. average, variance}
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H04W52/226 4 {using past references to control power, e.g. look-up-table}
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H04W52/228 4 {using past power values or information}
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H04W52/24 3 using SIR [Signal to Interference Ratio] or other wireless path parameters
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H04W52/241 4 {taking into account channel quality metrics, e.g. SIR, SNR, CIR, Eb/lo}
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H04W52/242 4 {taking into account path loss}
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H04W52/243 4 {taking into account interferences}
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H04W52/244 5 {Interferences in heterogeneous networks, e.g. among macro and femto or pico cells or other sector / system interference [OSI]}
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H04W52/245 4 {taking into account received signal strength}
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H04W52/246 4 {where the output power of a terminal is based on a path parameter calculated in said terminal}
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H04W52/247 4 {where the output power of a terminal is based on a path parameter sent by another terminal}
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H04W52/248 4 {where transmission power control commands are generated based on a path parameter}
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H04W52/26 3 using transmission rate or quality of service QoS [Quality of Service]
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H04W52/262 4 {taking into account adaptive modulation and coding [AMC] scheme (AMC per se H04L1/0001)}
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H04W52/265 4 {taking into account the quality of service QoS}
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H04W52/267 4 {taking into account the information rate}
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H04W52/28 3 using user profile, e.g. mobile speed, priority or network state, e.g. standby, idle or non transmission
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H04W52/281 4 {taking into account user or data type priority}
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H04W52/282 4 {taking into account the speed of the mobile}
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H04W52/283 4 {Power depending on the position of the mobile}
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H04W52/285 4 {taking into account the mobility of the user}
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H04W52/286 4 {during data packet transmission, e.g. high speed packet access [HSPA]}
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H04W52/287 4 {when the channel is in stand-by}
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H04W52/288 4 {taking into account the usage mode, e.g. hands-free, data transmission, telephone}
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H04W52/30 2 using constraints in the total amount of available transmission power
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H04W52/32 3 TPC of broadcast or control channels
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H04W52/322 4 {Power control of broadcast channels}
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H04W52/325 4 {Power control of control or pilot channels}
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H04W52/327 4 {Power control of multicast channels}
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H04W52/34 3 TPC management, i.e. sharing limited amount of power among users or channels or data types, e.g. cell loading
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H04W52/343 4 {taking into account loading or congestion level}
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H04W52/346 4 {distributing total power among users or channels}
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H04W52/36 3 with a discrete range or set of values, e.g. step size, ramping or offsets
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H04W52/362 4 {Aspects of the step size}
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H04W52/365 4 {Power headroom reporting}
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H04W52/367 4 {Power values between minimum and maximum limits, e.g. dynamic range}
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H04W52/38 2 TPC being performed in particular situations
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H04W52/383 3 {power control in peer-to-peer links}
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H04W52/386 3 {centralized, e.g. when the radio network controller or equivalent takes part in the power control}
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H04W52/40 3 during macro-diversity or soft handoff
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H04W52/42 3 in systems with time, space, frequency or polarisation diversity
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H04W52/44 3 in connection with interruption of transmission
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H04W52/46 3 in multi hop networks, e.g. wireless relay networks
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H04W52/48 3 during retransmission after error or non-acknowledgment
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H04W52/50 3 at the moment of starting communication in a multiple access environment
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H04W52/52 2 using AGC [Automatic Gain Control] circuits or amplifiers
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H04W52/54 2 Signalisation aspects of the TPC commands, e.g. frame structure
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H04W52/545 3 {modifying TPC bits in special situations}
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H04W52/56 3 Detection of errors of TPC bits
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H04W52/58 3 Format of the TPC bits
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H04W52/60 3 using different transmission rates for TPC commands
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H04W56/00 0 Synchronisation arrangements
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H04W56/0005 1 {synchronizing of arrival of multiple uplinks}
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H04W56/001 1 {Synchronization between nodes}
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H04W56/0015 2 {one node acting as a reference for the others}
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H04W56/002 2 {Mutual synchronization}
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H04W56/0025 2 {synchronizing potentially movable access points}
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H04W56/003 1 {Arrangements to increase tolerance to errors in transmission or reception timing}
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H04W56/0035 1 {detecting errors in frequency or phase}
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H04W56/004 1 {compensating for timing error of reception due to propagation delay}
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H04W56/0045 2 {compensating for timing error by altering transmission time}
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H04W56/005 2 {compensating for timing error by adjustment in the receiver}
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H04W56/0055 1 {determining timing error of reception due to propagation delay}
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H04W56/006 2 {using known positions of transmitter and receiver}
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H04W56/0065 2 {using measurement of signal travel time}
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H04W56/007 3 {Open loop measurement}
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H04W56/0075 4 {based on arrival time vs. expected arrival time}
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H04W56/008 5 {detecting arrival of signal based on received raw signal}
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H04W56/0085 5 {detecting a given structure in the signal}
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H04W56/009 3 {Closed loop measurements}
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H04W56/0095 2 {estimated based on signal strength}
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H04W60/00 0 Affiliation to network, e.g. registration; Terminating affiliation with the network, e.g. de-registration
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H04W60/005 1 {Multiple registrations, e.g. multihoming}
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H04W60/02 1 by periodical registration
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H04W60/04 1 using triggered events
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H04W60/06 1 De-registration or detaching
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H04W64/00 0 Locating users or terminals {or network equipment} for network management purposes, e.g. mobility management
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H04W64/003 1 {locating network equipment}
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H04W64/006 1 {with additional information processing, e.g. for direction or speed determination}
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H04W68/00 0 User notification, e.g. alerting and paging, for incoming communication, change of service or the like
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H04W68/005 1 {Transmission of information for alerting of incoming communication}
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H04W68/02 1 Arrangements for increasing efficiency of notification or paging channel
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H04W68/025 2 {Indirect paging}
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H04W68/04 1 multi-step notification using statistical or historical mobility data
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H04W68/06 1 using multi-step notification by changing the notification area
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H04W68/08 1 using multi-step notification by increasing the notification area
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H04W68/10 1 using simulcast notification
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H04W68/12 1 Inter-network notification
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H04W72/00 0 Local resource management
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H04W72/02 1 Selection of wireless resources by user or terminal
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H04W72/04 1 Wireless resource allocation
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H04W72/044 2 based on the type of the allocated resource
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H04W72/0446 3 Resources in time domain, e.g. slots or frames
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H04W72/0453 3 Resources in frequency domain, e.g. a carrier in FDMA
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H04W72/0457 3 Variable allocation of band or rate
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H04W72/046 3 {the resource being in the space domain, e.g. beams}
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H04W72/0466 3 {the resource being a scrambling code}
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H04W72/0473 3 {the resource being transmission power}
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H04W72/11 2 Semi-persistent scheduling
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H04W72/115 2 Grant-free or autonomous transmission
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H04W72/12 1 Wireless traffic scheduling
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H04W72/121 2 for groups of terminals or users
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H04W72/1215 2 {for collaboration of different radio technologies}
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H04W72/1221 2 {based on age of data to be sent}
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H04W72/1263 2 Mapping of traffic onto schedule, e.g. scheduled allocation or multiplexing of flows
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H04W72/1268 3 of uplink data flows
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H04W72/1273 3 of downlink data flows
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H04W72/20 1 Control channels or signalling for resource management
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H04W72/21 2 in the uplink direction of a wireless link, i.e. towards the network
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H04W72/23 2 in the downlink direction of a wireless link, i.e. towards a terminal
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H04W72/231 3 the control data signalling from the layers above the physical layer, e.g. RRC or MAC-CE signalling
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H04W72/232 3 the control data signalling from the physical layer, e.g. DCI signalling
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H04W72/25 2 between terminals via a wireless link, e.g. sidelink
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H04W72/27 2 between access points
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H04W72/29 2 between an access point and the access point controlling device
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H04W72/30 1 Resource management for broadcast services
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H04W72/40 1 Resource management for direct mode communication, e.g. D2D or sidelink
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H04W72/50 1 Allocation or scheduling criteria for wireless resources
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H04W72/51 2 based on terminal or device properties
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H04W72/512 3 for low-latency requirements, e.g. URLLC
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H04W72/52 2 based on load
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H04W72/53 2 based on regulatory allocation policies
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H04W72/535 2 {based on resource usage policies}
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H04W72/54 2 based on quality criteria
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H04W72/541 3 using the level of interference
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H04W72/542 3 using measured or perceived quality
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H04W72/543 3 based on requested quality, e.g. QoS
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H04W72/56 2 based on priority criteria
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H04W72/563 3 of the wireless resources
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H04W72/566 3 of the information or information source or recipient
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H04W72/569 4 {of the traffic information}
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H04W74/00 0 Wireless channel access, e.g. scheduled or random access
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H04W74/002 1 {Transmission of channel access control information}
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H04W74/004 2 {in the uplink, i.e. towards network}
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H04W74/006 2 {in the downlink, i.e. towards the terminal}
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H04W74/008 2 {with additional processing of random access related information at receiving side}
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H04W74/02 1 Hybrid access techniques
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H04W74/04 1 Scheduled {or contention-free} access (H04W74/02 takes precedence)
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H04W74/06 2 using polling
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H04W74/08 1 Non-scheduled {or contention based} access, e.g. random access, ALOHA, CSMA [Carrier Sense Multiple Access] (H04W74/02 takes precedence)
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H04W74/0808 2 {using carrier sensing, e.g. as in CSMA}
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H04W74/0816 3 {carrier sensing with collision avoidance}
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H04W74/0825 3 {carrier sensing with collision detection}
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H04W74/0833 2 {using a random access procedure}
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H04W74/0841 3 {with collision treatment}
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H04W74/085 4 {collision avoidance}
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H04W74/0858 4 {collision detection}
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H04W74/0866 2 {using a dedicated channel for access}
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H04W74/0875 3 {with assigned priorities based access}
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H04W74/0883 3 {for un-synchronized access}
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H04W74/0891 3 {for synchronized access}
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H04W76/00 0 Connection management
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H04W76/10 1 Connection setup
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H04W76/11 2 Allocation or use of connection identifiers
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H04W76/12 2 Setup of transport tunnels
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H04W76/14 2 Direct-mode setup
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H04W76/15 2 Setup of multiple wireless link connections
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H04W76/16 3 Involving different core network technologies, e.g. a packet-switched [PS] bearer in combination with a circuit-switched [CS] bearer
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H04W76/18 2 Management of setup rejection or failure
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H04W76/19 2 Connection re-establishment
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H04W76/20 1 Manipulation of established connections
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H04W76/22 2 Manipulation of transport tunnels
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H04W76/23 2 Manipulation of direct-mode connections
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H04W76/25 2 Maintenance of established connections
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H04W76/27 2 Transitions between radio resource control [RRC] states
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H04W76/28 2 Discontinuous transmission [DTX]; Discontinuous reception [DRX]
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H04W76/30 1 Connection release
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H04W76/32 2 Release of transport tunnels
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H04W76/34 2 Selective release of ongoing connections
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H04W76/36 3 for reassigning the resources associated with the released connections
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H04W76/38 2 triggered by timers
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H04W76/40 1 for selective distribution or broadcast
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H04W76/45 2 for Push-to-Talk [PTT] or Push-to-Talk over cellular [PoC] services
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H04W76/50 1 for emergency connections
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H04W80/00 0 Wireless network protocols or protocol adaptations to wireless operation
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H04W80/02 1 Data link layer protocols
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H04W80/04 1 Network layer protocols, e.g. mobile IP [Internet Protocol]
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H04W80/045 2 {involving different protocol versions, e.g. MIPv4 and MIPv6}
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H04W80/06 1 Transport layer protocols, e.g. TCP [Transport Control Protocol] over wireless {(transmission control protocol/Internet protocol [TCP/IP] or user datagram protocol [UDP] H04L69/16)}
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H04W80/08 1 Upper layer protocols {(network arrangements or communication protocols for networked applications H04L67/00)}
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H04W80/085 2 {involving different upper layer protocol versions, e.g. LCS - SUPL or WSN-SOA-WSDP}
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H04W80/10 2 adapted for {application} session management, e.g. SIP [Session Initiation Protocol] {(connection management H04W76/00; arrangements for session management H04L67/14)}
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H04W80/12 2 Application layer protocols, e.g. WAP [Wireless Application Protocol]
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H04W84/00 0 Network topologies
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H04W84/005 1 {Moving wireless networks}
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H04W84/02 1 Hierarchically pre-organised networks, e.g. paging networks, cellular networks, WLAN [Wireless Local Area Network] or WLL [Wireless Local Loop]
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H04W84/022 2 {One-way selective calling networks, e.g. wide area paging}
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H04W84/025 3 {with acknowledge back capability}
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H04W84/027 3 {providing paging services}
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H04W84/04 2 Large scale networks; Deep hierarchical networks
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H04W84/042 3 {Public Land Mobile systems, e.g. cellular systems}
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H04W84/045 4 {using private Base Stations, e.g. femto Base Stations, home Node B}
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H04W84/047 4 {using dedicated repeater stations}
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H04W84/06 3 Airborne or Satellite Networks (space-based or airborne stations H04B7/185)
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H04W84/08 3 Trunked mobile radio systems
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H04W84/10 2 Small scale networks; Flat hierarchical networks
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H04W84/105 3 {PBS [Private Base Station] network (H04W84/12 - H04W84/16 take precedence)}
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H04W84/12 3 WLAN [Wireless Local Area Networks]
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H04W84/14 3 WLL [Wireless Local Loop]; RLL [Radio Local Loop]
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H04W84/16 3 WPBX [Wireless Private Branch Exchange]
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H04W84/18 1 Self-organising networks, e.g. ad-hoc networks or sensor networks
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H04W84/20 2 Master-slave {selection or change} arrangements
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H04W84/22 2 with access to wired networks
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H04W88/00 0 Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
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H04W88/005 1 {Data network PoA devices}
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H04W88/02 1 Terminal devices
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H04W88/021 2 {adapted for Wireless Local Loop operation}
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H04W88/022 2 {Selective call receivers}
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H04W88/023 3 {with message or information receiving capability}
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H04W88/025 3 {Selective call decoders}
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H04W88/026 4 {using digital address codes}
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H04W88/027 4 {using frequency address codes}
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H04W88/028 4 {using pulse address codes}
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H04W88/04 2 adapted for relaying to or from another terminal or user
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H04W88/06 2 adapted for operation in multiple networks {or having at least two operational modes}, e.g. multi-mode terminals
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H04W88/08 1 Access point devices
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H04W88/085 2 {Access point devices with remote components}
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H04W88/10 2 adapted for operation in multiple networks, e.g. multi-mode access points
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H04W88/12 1 Access point controller devices
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H04W88/14 1 Backbone network devices
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H04W88/16 1 Gateway arrangements
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H04W88/18 1 Service support devices; Network management devices
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H04W88/181 2 {Transcoding devices; Rate adaptation devices}
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H04W88/182 2 {Network node acting on behalf of an other network entity, e.g. proxy}
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H04W88/184 2 {Messaging devices, e.g. message centre}
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H04W88/185 2 {Selective call encoders for paging networks, e.g. paging centre devices}
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H04W88/187 3 {using digital or pulse address codes}
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H04W88/188 3 {using frequency address codes}
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H04W92/00 0 Interfaces specially adapted for wireless communication networks
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H04W92/02 1 Inter-networking arrangements
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H04W92/04 1 Interfaces between hierarchically different network devices
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H04W92/045 2 {between access point and backbone network device}
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H04W92/06 2 between gateways and public network devices
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H04W92/08 2 between user and terminal device
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H04W92/10 2 between terminal device and access point, i.e. wireless air interface
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H04W92/12 2 between access points and access point controllers
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H04W92/14 2 between access point controllers and backbone network device
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H04W92/16 1 Interfaces between hierarchically similar devices
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H04W92/18 2 between terminal devices
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H04W92/20 2 between access points
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H04W92/22 2 between access point controllers
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H04W92/24 2 between backbone network devices
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H04W99/00 0 Subject matter not provided for in other groups of this subclass
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H05 ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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H05B ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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H05B1/00 0 Details of electric heating devices
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H05B1/02 1 Automatic switching arrangements specially adapted to apparatus {; Control of heating devices} (thermally-actuated switches H01H37/00)
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H05B1/0202 2 {Switches}
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H05B1/0205 3 {using a fusible material}
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H05B1/0208 3 {actuated by the expansion or evaporation of a gas or liquid}
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H05B1/0211 3 {using the expansion of an electric conductive liquid}
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H05B1/0213 3 {using bimetallic elements}
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H05B1/0216 3 {actuated by the expansion of a solid element, e.g. wire or rod}
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H05B1/0219 3 {actuated by modification of the magnetic properties of a material}
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H05B1/0222 3 {actuated by changing weight, level or centre of gravity}
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H05B1/0225 3 {actuated by timers}
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H05B1/0227 2 {Applications}
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H05B1/023 3 {Industrial applications}
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H05B1/0233 4 {for semiconductors manufacturing}
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H05B1/0236 4 {for vehicles}
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H05B1/0238 5 {For seats}
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H05B1/0241 4 {For photocopiers}
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H05B1/0244 4 {Heating of fluids (H05B1/0247 takes precedence)}
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H05B1/0247 4 {For chemical processes}
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H05B1/025 4 {For medical applications}
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H05B1/0252 3 {Domestic applications}
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H05B1/0255 4 {Irons}
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H05B1/0258 4 {For cooking}
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H05B1/0261 5 {of food}
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H05B1/0263 6 {Ovens}
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H05B1/0266 6 {Cooktops}
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H05B1/0269 5 {For heating of fluids}
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H05B1/0272 4 {For heating of fabrics}
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H05B1/0275 4 {Heating of spaces, e.g. rooms, wardrobes}
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H05B1/0277 5 {Electric radiators}
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H05B1/028 5 {Airconditioning}
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H05B1/0283 5 {For heating of fluids, e.g. water heaters}
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H05B1/0286 5 {Heat storages}
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H05B1/0288 3 {for non specified applications}
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H05B1/0291 4 {Tubular elements}
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H05B1/0294 4 {Planar elements}
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H05B1/0297 3 {Heating of fluids for non specified applications}
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H05B3/00 0 Ohmic-resistance heating
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H05B3/0004 1 {Devices wherein the heating current flows through the material to be heated (Circuit arrangements for heating by passing the current directly across the material to be heated H05B3/0023; granular, powdered or fluid material H05B3/60)}
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H05B3/0009 2 {the material to be heated being in motion}
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H05B3/0014 1 {Devices wherein the heating current flows through particular resistances}
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H05B3/0019 1 {Circuit arrangements}
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H05B3/0023 2 {for heating by passing the current directly across the material to be heated}
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H05B3/0033 1 {Heating devices using lamps}
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H05B3/0038 2 {for industrial applications}
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H05B3/0042 3 {used in motor vehicles}
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H05B3/0047 3 {for semiconductor manufacture}
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H05B3/0052 3 {for fluid treatments}
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H05B3/0057 3 {for plastic handling and treatment (including molds B29C)}
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H05B3/0061 3 {for metal treatment}
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H05B3/0066 3 {for photocopying}
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H05B3/0071 2 {for domestic applications}
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H05B3/0076 3 {for cooking, e.g. in ovens (lamps specially adapted for non-metallic cooking plates H05B3/742, H05B3/744)}
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H05B3/008 3 {for heating of inner spaces}
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H05B3/0085 2 {for medical applications}
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H05B3/009 2 {heating devices not specially adapted for a particular application}
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H05B3/0095 1 {Heating devices in the form of rollers (heated by induction H05B6/145)}
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H05B3/02 1 Details
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H05B3/03 2 Electrodes
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H05B3/04 2 Waterproof or air-tight seals for heaters
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H05B3/06 2 Heater elements structurally combined with coupling elements or holders
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H05B3/08 3 having electric connections specially adapted for high temperatures
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H05B3/10 1 Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor (compositions per se see the relevant subclasses)
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H05B3/12 2 characterised by the composition or nature of the conductive material
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H05B3/14 3 the material being non-metallic
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H05B3/141 4 {Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds}
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H05B3/143 5 {applied to semiconductors, e.g. wafers heating (H05B3/0047 takes precedence)}
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H05B3/145 4 {Carbon only, e.g. carbon black, graphite}
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H05B3/146 4 {Conductive polymers, e.g. polyethylene, thermoplastics}
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H05B3/148 4 {Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes}
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H05B3/16 2 the conductor being mounted on an insulating base
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H05B3/18 2 the conductor being embedded in an insulating material
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H05B3/20 1 Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater (H05B3/62, H05B3/68, H05B3/78, H05B3/84 take precedence)
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H05B3/22 2 non-flexible
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H05B3/24 3 heating conductor being self-supporting
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H05B3/26 3 heating conductor mounted on insulating base {(for transparent areas H05B3/84, H05B3/86)}
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H05B3/262 4 {the insulating base being an insulated metal plate}
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H05B3/265 4 {the insulating base being an inorganic material, e.g. ceramic (H05B3/262 takes precedence)}
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H05B3/267 4 {the insulating base being an organic material, e.g. plastic (H05B3/262 takes precedence)}
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H05B3/28 3 heating conductor embedded in insulating material
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H05B3/283 4 {the insulating material being an inorganic material, e.g. ceramic}
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H05B3/286 4 {the insulating material being an organic material, e.g. plastic}
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H05B3/30 4 on or between metallic plates
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H05B3/32 3 heating conductor mounted on insulators on a metallic frame
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H05B3/34 2 flexible, e.g. heating nets or webs
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H05B3/342 3 {heaters used in textiles}
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H05B3/345 4 {knitted fabrics}
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H05B3/347 4 {woven fabrics}
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H05B3/36 3 heating conductor embedded in insulating material
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H05B3/38 4 Powder conductors
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H05B3/40 1 Heating elements having the shape of rods or tubes (H05B3/62, H05B3/68, H05B3/78 take precedence)
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H05B3/42 2 non-flexible
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H05B3/44 3 heating conductor arranged within rods or tubes of insulating material
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H05B3/46 3 heating conductor mounted on insulating base
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H05B3/48 3 heating conductor embedded in insulating material
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H05B3/50 4 heating conductor arranged in metal tubes, the radiating surface having heat-conducting fins
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H05B3/52 4 Apparatus or processes for filling or compressing insulating material in tubes
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H05B3/54 2 flexible
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H05B3/56 3 Heating cables
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H05B3/565 4 {flat cables}
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H05B3/58 3 Heating hoses; Heating collars
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H05B3/60 1 Heating arrangements wherein the heating current flows through granular powdered or fluid material, e.g. for salt-bath furnace, electrolytic heating (H05B3/38 takes precedence)
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H05B3/62 1 Heating elements specially adapted for furnaces (H05B3/60 takes precedence; arrangements of such elements in furnaces F27, e.g. F27D11/00)
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H05B3/64 2 using ribbon, rod, or wire heater
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H05B3/66 2 Supports or mountings for heaters on or in the wall or roof
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H05B3/68 1 Heating arrangements specially adapted for cooking plates or analogous hot-plates
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H05B3/681 2 {Plates having mobile parts coming into contact with the bottom of the kettles, pans, or the like}
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H05B3/683 2 {Plates having their feeding circuit closed as the kettles, pans or the like are put on (H05B3/74 takes precedence)}
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H05B3/685 2 {Plates having magnetic means attracting the kettles, pans, or the like}
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H05B3/686 2 {Heat-storage plates}
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H05B3/688 2 {Fabrication of the plates (for single-step processes see the appropriate subclass, e.g. in B23C, sub-section metallurgy)}
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H05B3/70 2 Plates of cast metal
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H05B3/72 2 Plates of sheet metal
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H05B3/74 2 Non-metallic plates {, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits}
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H05B3/742 3 {Plates having both lamps and resistive heating elements}
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H05B3/744 3 {Lamps as heat source, i.e. heating elements with protective gas envelope, e.g. halogen lamps}
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H05B3/746 3 {Protection, e.g. overheat cutoff, hot plate indicator}
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H05B3/748 3 {Resistive heating elements, i.e. heating elements exposed to the air, e.g. coil wire heater (H05B3/742 takes precedence)}
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H05B3/76 2 Plates with spirally-wound heating tubes
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H05B3/78 1 Heating arrangements specially adapted for immersion heating
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H05B3/80 2 Portable immersion heaters
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H05B3/82 2 Fixedly-mounted immersion heaters
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H05B3/84 1 Heating arrangements specially adapted for transparent or reflecting areas, e.g. for demisting or de-icing windows, mirrors or vehicle windshields
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H05B3/845 2 {specially adapted for reflecting surfaces, e.g. bathroom - or rearview mirrors}
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H05B3/86 2 the heating conductors being embedded in the transparent or reflecting material {(H05B3/845 takes precedence)}
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H05B6/00 0 Heating by electric, magnetic or electromagnetic fields
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H05B6/02 1 Induction heating
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H05B6/04 2 Sources of current
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H05B6/06 2 Control, e.g. of temperature, of power
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H05B6/062 3 {for cooking plates or the like}
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H05B6/065 4 {using coordinated control of multiple induction coils}
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H05B6/067 3 {for melting furnaces}
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H05B6/08 3 using compensating or balancing arrangements
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H05B6/10 2 Induction heating apparatus, other than furnaces, for specific applications
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H05B6/101 3 {for local heating of metal pieces}
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H05B6/102 4 {the metal pieces being rotated while induction heated}
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H05B6/103 4 {multiple metal pieces successively being moved close to the inductor}
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H05B6/104 5 {metal pieces being elongated like wires or bands}
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H05B6/105 3 {using a susceptor}
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H05B6/106 4 {in the form of fillings}
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H05B6/107 4 {for continuous movement of material}
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H05B6/108 4 {for heating a fluid}
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H05B6/109 4 {using magnets rotating with respect to a susceptor}
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H05B6/12 3 Cooking devices
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H05B6/1209 4 {induction cooking plates or the like and devices to be used in combination with them}
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H05B6/1218 5 {with arrangements using lights for heating zone state indication}
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H05B6/1227 5 {for wok pans and wok pans supports for induction cooking plates}
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H05B6/1236 5 {adapted to induce current in a coil to supply power to a device and electrical heating devices powered in this way}
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H05B6/1245 5 {with special coil arrangements}
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H05B6/1254 6 {using conductive pieces to direct the induced magnetic field}
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H05B6/1263 6 {using coil cooling arrangements}
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H05B6/1272 6 {with more than one coil or coil segment per heating zone}
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H05B6/1281 6 {with flat coils}
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H05B6/129 4 {induction ovens}
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H05B6/14 3 Tools, e.g. nozzles, rollers, calenders
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H05B6/145 4 {Heated rollers}
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H05B6/16 2 Furnaces having endless cores (H05B6/34 takes precedence)
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H05B6/18 3 having melting basin
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H05B6/20 3 having melting channel only
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H05B6/22 2 Furnaces without an endless core (H05B6/34 takes precedence)
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H05B6/24 3 Crucible furnaces (H05B6/30 takes precedence)
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H05B6/26 4 using vacuum or particular gas atmosphere
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H05B6/28 4 Protective systems
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H05B6/30 3 Arrangements for remelting or zone melting
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H05B6/32 3 Arrangements for simultaneous levitation and heating
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H05B6/34 2 Arrangements for circulation of melts
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H05B6/36 2 Coil arrangements
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H05B6/362 3 {with flat coil conductors}
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H05B6/365 3 {using supplementary conductive or ferromagnetic pieces}
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H05B6/367 3 {for melting furnaces}
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H05B6/38 3 specially adapted for fitting into hollow spaces of workpieces
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H05B6/40 3 Establishing desired heat distribution, e.g. to heat particular parts of workpieces
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H05B6/405 4 {for heating gear-wheels}
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H05B6/42 3 Cooling of coils
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H05B6/44 3 having more than one coil or coil segment
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H05B6/46 1 Dielectric heating (H05B6/64 takes precedence)
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H05B6/48 2 Circuits
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H05B6/50 3 for monitoring or control
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H05B6/52 2 Feed lines
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H05B6/54 2 Electrodes
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H05B6/56 3 Rolling electrodes
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H05B6/58 3 "sewing machine" type
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H05B6/60 2 Arrangements for continuous movement of material
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H05B6/62 2 Apparatus for specific applications
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H05B6/64 1 Heating using microwaves {(containers, packaging elements or packages specially adapted to be heated by microwaves B65D81/3446)}
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H05B6/6402 2 {Aspects relating to the microwave cavity}
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H05B6/6405 3 {Self-cleaning cavity}
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H05B6/6408 2 {Supports or covers specially adapted for use in microwave heating apparatus}
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H05B6/6411 3 {the supports being rotated}
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H05B6/6414 2 {Aspects relating to the door of the microwave heating apparatus}
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H05B6/6417 3 {Door interlocks of the microwave heating apparatus and related circuits}
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H05B6/642 2 {Cooling of the microwave components and related air circulation systems (H05B6/6473 takes precedence)}
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H05B6/6423 3 {wherein the microwave oven air circulation system is also used as air extracting hood}
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H05B6/6426 2 {Aspects relating to the exterior of the microwave heating apparatus, e.g. metal casing, power cord}
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H05B6/6429 3 {Aspects relating to mounting assemblies of wall-mounted microwave ovens}
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H05B6/6432 2 {Aspects relating to testing or detecting leakage in a microwave heating apparatus}
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H05B6/6435 2 {Aspects relating to the user interface of the microwave heating apparatus}
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H05B6/6438 3 {allowing the recording of a program of operation of the microwave heating apparatus}
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H05B6/6441 3 {allowing the input of coded operation instructions, e.g. bar code reader}
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H05B6/6444 2 {Aspects relating to lighting devices in the microwave cavity}
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H05B6/6447 2 {Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors}
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H05B6/645 3 {using temperature sensors}
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H05B6/6452 4 {the sensors being in contact with the heated product}
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H05B6/6455 4 {the sensors being infra-red detectors}
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H05B6/6458 3 {using humidity or vapor sensors}
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H05B6/6461 3 {using fire or fume sensors}
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H05B6/6464 3 {using weight sensors}
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H05B6/6467 3 {using detectors with R.F. transmitters}
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H05B6/647 2 {Aspects related to microwave heating combined with other heating techniques}
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H05B6/6473 3 {combined with convection heating (H05B6/6485 takes precedence)}
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H05B6/6476 4 {the refrigerating air being used for convection}
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H05B6/6479 4 {using steam}
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H05B6/6482 3 {combined with radiant heating, e.g. infra-red heating}
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H05B6/6485 4 {further combined with convection heating}
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H05B6/6488 3 {combined with induction heating}
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H05B6/6491 3 {combined with the use of susceptors (H05B6/80 and subgroups takes precedence)}
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H05B6/6494 4 {for cooking}
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H05B6/6497 5 {the susceptors being liquids}
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H05B6/66 2 Circuits
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H05B6/662 3 {Aspects related to the boost transformer of the microwave heating apparatus}
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H05B6/664 3 {Aspects related to the power supply of the microwave heating apparatus}
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H05B6/666 3 {Safety circuits (emergency protective circuits in general H02H)}
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H05B6/668 3 {Microwave heating devices connected to a telecommunication network}
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H05B6/68 3 for monitoring or control
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H05B6/681 4 {Circuits comprising an inverter, a boost transformer and a magnetron}
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H05B6/682 5 {wherein the switching control is based on measurements of electrical values of the circuit}
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H05B6/683 6 {the measurements being made at the high voltage side of the circuit}
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H05B6/685 6 {the measurements being made at the low voltage side of the circuit}
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H05B6/686 4 {Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators}
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H05B6/687 4 {for cooking}
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H05B6/688 4 {for thawing}
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H05B6/70 2 Feed lines
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H05B6/701 3 {using microwave applicators}
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H05B6/702 3 {using coaxial cables}
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H05B6/704 3 {using microwave polarisers}
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H05B6/705 3 {using microwave tuning}
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H05B6/707 3 {using waveguides}
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H05B6/708 4 {in particular slotted waveguides}
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H05B6/72 2 Radiators or antennas
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H05B6/725 3 {Rotatable antennas}
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H05B6/74 2 Mode transformers or mode stirrers
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H05B6/745 3 {Rotatable stirrers}
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H05B6/76 2 Prevention of microwave leakage, e.g. door sealings
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H05B6/763 3 {Microwave radiation seals for doors}
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H05B6/766 3 {Microwave radiation screens for windows}
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H05B6/78 2 Arrangements for continuous movement of material
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H05B6/782 3 {wherein the material moved is food}
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H05B6/784 3 {wherein the material is moved using a tubular transport line, e.g. screw transport systems}
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H05B6/786 3 {wherein the material is moved using mechanical vibrations of plates}
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H05B6/788 3 {wherein an elongated material is moved by applying a mechanical tension to it}
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H05B6/80 2 Apparatus for specific applications (stoves or ranges F24C7/02)
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H05B6/802 3 {for heating fluids (methods of heating fluids in conventional microwave ovens H05B6/687)}
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H05B6/804 4 {Water heaters, water boilers}
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H05B6/806 3 {for laboratory use}
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H05B6/808 3 {Microwave heating adapted for vending machines}
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H05B7/00 0 Heating by electric discharge (plasma torches H05H1/26)
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H05B7/005 1 {Electrical diagrams}
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H05B7/02 1 Details
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H05B7/06 2 Electrodes
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H05B7/07 3 designed to melt in use
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H05B7/08 3 non-consumable
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H05B7/085 4 mainly consisting of carbon
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H05B7/09 5 Self-baking electrodes, e.g. Söderberg type electrodes
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H05B7/10 2 Mountings, supports, terminals or arrangements for feeding or guiding electrodes
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H05B7/101 3 Mountings, supports or terminals at head of electrode, i.e. at the end remote from the arc
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H05B7/102 4 specially adapted for consumable electrodes
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H05B7/103 3 Mountings, supports or terminals with jaws (H05B7/101 takes precedence)
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H05B7/105 4 comprising more than two jaws equally spaced along circumference, e.g. ring holders
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H05B7/107 3 specially adapted for self-baking electrodes
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H05B7/109 3 Feeding arrangements (H05B7/107 takes precedence; where the electrode movement is part of a closed loop for automatic control of power H05B7/148)
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H05B7/11 2 Arrangements for conducting current to the electrode terminals
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H05B7/12 2 Arrangements for cooling, sealing or protecting electrodes
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H05B7/14 2 Arrangements or methods for connecting successive electrode sections
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H05B7/144 2 Power supplies specially adapted for heating by electric discharge; Automatic control of power, e.g. by positioning of electrodes
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H05B7/148 3 Automatic control of power (electrode feeding arrangements H05B7/109; automatic feeding of electrodes for spot or seam welding or cutting B23K9/12; disposition of electrodes in or on furnaces F27D11/10; control of position in general G05D3/00; regulating electric characteristics of arcs in general G05F1/02; regulating electric power in general G05F1/66)
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H05B7/152 4 by electromechanical means for positioning of electrodes
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H05B7/156 4 by hydraulic or pneumatic means for positioning of electrodes
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H05B7/16 1 Heating by glow discharge
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H05B7/18 1 Heating by arc discharge
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H05B7/185 2 {Heating gases for arc discharge (gas-filled discharge tubes H01J37/32)}
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H05B7/20 2 Direct heating by arc discharge, i.e. where at least one end of the arc directly acts on the material to be heated, including additional resistance heating by arc current flowing through the material to be heated
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H05B7/22 2 Indirect heating by arc discharge
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H05B7/225 3 {by arc image}
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H05B11/00 0 Heating by combined application of processes covered by two or more of groups H05B3/00 - H05B7/00 (H05B7/20 takes precedence)
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H05B31/00 0 Electric arc lamps (regulating electric characteristics of arcs G05F1/02)
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H05B31/0003 1 {the arc being outside, in the open}
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H05B31/0006 2 {with superimposed electrodes}
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H05B31/0009 2 {with parallel or oblique disposition of the electrodes; Special form of the electrodes}
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H05B31/0012 2 {with a plurality of electrode pairs}
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H05B31/0015 2 {with spare electrodes}
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H05B31/0018 1 {in a closed vessel}
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H05B31/0021 2 {Construction, in particular closure, of the vessel}
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H05B31/0024 2 {Outlet valves}
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H05B31/0027 2 {with special gasfilling}
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H05B31/003 1 {of a special type}
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H05B31/0033 2 {with glowrod and candle}
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H05B31/0036 2 {for projection, copying or stage lighting}
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H05B31/0039 2 {Projectors, the construction of which depends upon the presence of the arc}
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H05B31/0042 1 {Mounting; Connecting}
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H05B31/0045 2 {of individual lamps; Associated impedances}
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H05B31/0048 2 {of plural lamps}
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H05B31/0051 2 {Bypassing circuit devices for arc lamps}
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H05B31/0054 2 {Short circuit devices for arc lamps}
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H05B31/0057 1 {Accessories for arc lamps}
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H05B31/006 2 {Electromagnets or armatures; Arc blowing electromagnets}
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H05B31/0063 2 {Damping devices}
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H05B31/0066 2 {Saving arrangements; Ventilation devices}
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H05B31/0069 2 {Vessels; Closing of vessels}
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H05B31/0072 2 {Reflectors for arc lamps}
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H05B31/0075 2 {Incandescent mantles}
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H05B31/0078 2 {Devices for starting or extinguishing}
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H05B31/0081 1 {Controlling of arc lamps}
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H05B31/0084 2 {with stirrups or levers}
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H05B31/0087 2 {with a thread or chain}
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H05B31/009 2 {with tightening devices}
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H05B31/0093 2 {with a threaded rod}
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H05B31/0096 2 {with hydraulic or pneumatic means}
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H05B31/02 1 Details
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H05B31/04 2 Housings
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H05B31/06 2 Electrodes
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H05B31/065 3 {for flame arc lamps}
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H05B31/08 3 Carbon electrodes
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H05B31/10 4 Cored carbon electrodes
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H05B31/12 4 Beck-effect electrodes
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H05B31/14 3 Metal electrodes
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H05B31/16 3 Apparatus or processes specially adapted for manufacturing electrodes
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H05B31/18 2 Mountings for electrodes; Electrode feeding devices
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H05B31/20 3 Mechanical arrangements for feeding electrodes {(for controlling arc lamps H05B31/0081)}
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H05B31/22 3 Electromagnetic arrangements for feeding electrodes {(using electromagnets H05B31/006)}
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H05B31/24 2 Cooling arrangements
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H05B31/26 2 Influencing the shape of arc discharge by gas blowing devices
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H05B31/28 2 Influencing the shape of arc discharge by magnetic means {(using electromagnets H05B31/006)}
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H05B31/30 2 Starting; Igniting {(devices therefor H05B31/0078)}
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H05B31/305 3 {Ignition devices}
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H05B31/32 2 Switching-off
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H05B31/34 2 Indicating consumption of electrodes
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H05B31/36 1 having two electrodes in line {(electrodes in the open H05B31/0006)}
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H05B31/38 2 specially adapted for ac
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H05B31/40 1 having two electrodes at an angle {(electrodes in the open H05B31/0009)}
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H05B31/42 2 specially adapted for ac
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H05B31/44 1 having two parallel electrodes {(electrodes in the open H05B31/0009)}
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H05B31/46 2 specially adapted for ac
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H05B31/48 1 having more than two electrodes {(electrodes in the open H05B31/0012)}
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H05B31/50 2 specially adapted for ac
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H05B31/52 3 electrodes energised from different phases of the supply
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H05B33/00 0 Electroluminescent light sources
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H05B33/02 1 Details
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H05B33/04 2 Sealing arrangements {, e.g. against humidity}
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H05B33/06 2 Electrode terminals
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H05B33/10 1 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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H05B33/12 1 Light sources with substantially two-dimensional radiating surfaces
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H05B33/14 2 characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source}
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H05B33/145 3 {Arrangements of the electroluminescent material}
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H05B33/18 2 characterised by the nature or concentration of the activator
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H05B33/20 2 characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
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H05B33/22 2 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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H05B33/24 3 of metallic reflective layers (H05B33/26 takes precedence)
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H05B33/26 2 characterised by the composition or arrangement of the conductive material used as an electrode
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H05B33/28 3 of translucent electrodes
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H05B35/00 0 Electric light sources using a combination of different types of light generation
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H05B39/00 0 Circuit arrangements or apparatus for operating incandescent light sources (structurally associated with the incandescent lamps H01K1/62)
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H05B39/02 1 Switching on, e.g. with predetermined rate of increase of lighting current
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H05B39/04 1 Controlling
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H05B39/041 2 {the light-intensity of the source (H05B39/08 takes precedence)}
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H05B39/042 3 {by measuring the incident light}
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H05B39/044 3 {continuously (H05B39/042 takes precedence)}
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H05B39/045 4 {with high-frequency bridge converters (H05B39/048 takes precedence)}
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H05B39/047 4 {with pulse width modulation from a DC power source}
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H05B39/048 4 {with reverse phase control}
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H05B39/06 2 Switching arrangements, e.g. from series operation to parallel operation
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H05B39/08 2 by shifting phase of trigger voltage applied to gas-filled controlling tubes {also in controlled semiconductor devices (in converters H02M5/00; with regulation G05F1/44)}
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H05B39/081 3 {by measuring the incident light (H05B39/083 takes precedence)}
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H05B39/083 3 {by the variation-rate of light intensity}
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H05B39/085 4 {by touch control}
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H05B39/086 5 {with possibility of remote control}
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H05B39/088 6 {by wireless means, e.g. infra-red transmitting means}
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H05B39/09 1 in which the lamp is fed by pulses {(automatic circuit devices built into or on the incandescent lamp H01K1/625; vehicle winking devices B60Q1/38)}
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H05B39/10 1 Circuits providing for substitution of the light source in case of its failure {(changing to a reserve current source H02J9/00)}
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H05B39/105 2 {with a spare lamp in the circuit, and a possibility of shunting a failed lamp (lamp changing devices H01R33/00, H01R43/00; incandescent lamps with a reserve body H01K)}
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H05B41/00 0 Circuit arrangements or apparatus for igniting or operating discharge lamps (structurally associated with the discharge lamps H01J61/54, H01J61/56)
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H05B41/02 1 Details
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H05B41/04 2 Starting switches
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H05B41/042 3 {using semiconductor devices}
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H05B41/044 4 {for lamp provided with pre-heating electrodes}
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H05B41/046 5 {using controlled semiconductor devices}
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H05B41/048 3 {using electromagnetic relays}
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H05B41/06 3 thermal only
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H05B41/08 4 heated by glow discharge
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H05B41/10 3 magnetic only
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H05B41/12 3 combined thermal and magnetic
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H05B41/14 1 Circuit arrangements
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H05B41/16 2 in which the lamp is fed by dc or by low-frequency ac, e.g. by 50 cycles/sec ac, {or with network frequencies}
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H05B41/18 3 having a starting switch
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H05B41/19 4 for lamps having an auxiliary starting electrode
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H05B41/20 3 having no starting switch
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H05B41/22 4 for lamps having an auxiliary starting electrode
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H05B41/23 4 for lamps not having an auxiliary starting electrode
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H05B41/231 5 for high-pressure lamps
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H05B41/232 5 for low-pressure lamps
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H05B41/2325 6 {provided with pre-heating electrodes}
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H05B41/233 6 using resonance circuitry
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H05B41/234 6 to eliminate stroboscopic effects, e.g. feeding two lamps with different phases
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H05B41/24 2 in which the lamp is fed by high frequency ac, {or with separate oscillator frequency}(H05B41/26 takes precedence)
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H05B41/245 3 {for a plurality of lamps}
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H05B41/26 2 in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
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H05B41/28 3 using static converters
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H05B41/2806 4 {with semiconductor devices and specially adapted for lamps without electrodes in the vessel, e.g. surface discharge lamps, electrodeless discharge lamps}
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H05B41/2813 5 {Arrangements for protecting lamps or circuits against abnormal operating conditions}
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H05B41/282 4 with semiconductor devices ({H05B41/2806}, H05B41/288, H05B41/295 take precedence)
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H05B41/2821 5 {by means of a single-switch converter or a parallel push-pull converter in the final stage (H05B41/285 takes precedence)}
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H05B41/2822 6 {using specially adapted components in the load circuit, e.g. feed-back transformers, piezo-electric transformers; using specially adapted load circuit configurations}
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H05B41/2824 6 {using control circuits for the switching element (H05B41/2822 takes precedence)}
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H05B41/2825 5 {by means of a bridge converter in the final stage (H05B41/285 takes precedence)}
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H05B41/2827 6 {using specially adapted components in the load circuit, e.g. feed-back transformers, piezo-electric transformers; using specially adapted load circuit configurations}
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H05B41/2828 6 {using control circuits for the switching elements (H05B41/2827 takes precedence)}
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H05B41/285 5 Arrangements for protecting lamps or circuits against abnormal operating conditions
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H05B41/2851 6 {for protecting the circuit against abnormal operating conditions}
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H05B41/2853 7 {against abnormal power supply conditions}
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H05B41/2855 7 {against abnormal lamp operating conditions}
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H05B41/2856 7 {against internal abnormal circuit conditions}
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H05B41/2858 6 {for protecting the lamp against abnormal operating conditions}
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H05B41/288 4 with semiconductor devices and specially adapted for lamps without preheating electrodes, e.g. for high-intensity discharge lamps, high-pressure mercury or sodium lamps or low-pressure sodium lamps {(H05B41/2806 takes precedence)}
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H05B41/2881 5 {Load circuits; Control thereof}
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H05B41/2882 6 {the control resulting from an action on the static converter}
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H05B41/2883 7 {the controlled element being a DC/AC converter in the final stage, e.g. by harmonic mode starting}
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H05B41/2885 5 {Static converters especially adapted therefor; Control thereof (H05B41/2882 takes precedence)}
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H05B41/2886 6 {comprising a controllable preconditioner, e.g. a booster}
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H05B41/2887 6 {characterised by a controllable bridge in the final stage}
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H05B41/2888 7 {the bridge being commutated at low frequency, e.g. 1kHz}
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H05B41/292 5 Arrangements for protecting lamps or circuits against abnormal operating conditions
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H05B41/2921 6 {for protecting the circuit against abnormal operating conditions}
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H05B41/2923 7 {against abnormal power supply conditions}
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H05B41/2925 7 {against abnormal lamp operating conditions}
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H05B41/2926 7 {against internal abnormal circuit conditions}
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H05B41/2928 6 {for protecting the lamp against abnormal operating conditions}
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H05B41/295 4 with semiconductor devices and specially adapted for lamps with preheating electrodes, e.g. for fluorescent lamps
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H05B41/298 5 Arrangements for protecting lamps or circuits against abnormal operating conditions
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H05B41/2981 6 {for protecting the circuit against abnormal operating conditions}
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H05B41/2983 7 {against abnormal power supply conditions}
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H05B41/2985 7 {against abnormal lamp operating conditions}
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H05B41/2986 7 {against internal abnormal circuit conditions}
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H05B41/2988 6 {for protecting the lamp against abnormal operating conditions}
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H05B41/30 2 in which the lamp is fed by pulses, e.g. flash lamp
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H05B41/32 3 for single flash operation
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H05B41/325 4 {by measuring the incident light}
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H05B41/34 3 to provide a sequence of flashes
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H05B41/36 2 Controlling
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H05B41/38 3 Controlling the intensity of light
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H05B41/382 4 {during the transitional start-up phase}
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H05B41/384 5 {in case of hot-restriking}
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H05B41/386 5 {for speeding-up the lighting-up}
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H05B41/388 5 {for a transition from glow to arc}
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H05B41/39 4 continuously
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H05B41/391 5 using saturable magnetic devices
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H05B41/392 5 using semiconductor devices, e.g. thyristor
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H05B41/3921 6 {with possibility of light intensity variations}
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H05B41/3922 7 {and measurement of the incident light}
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H05B41/3924 7 {by phase control, e.g. using a triac (H05B41/3922 takes precedence)}
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H05B41/3925 7 {by frequency variation (H05B41/3922 takes precedence)}
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H05B41/3927 7 {by pulse width modulation (H05B41/3922 takes precedence)}
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H05B41/3928 8 {for high-pressure lamps, e.g. high-intensity discharge lamps, high-pressure mercury or sodium lamps}
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H05B41/40 4 discontinuously
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H05B41/42 5 in two steps only
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H05B41/44 3 for providing special optical effects, e.g. progressive motion of light
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H05B41/46 2 Circuits providing for substitution in case of failure of the lamp
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H05B44/00 0 Circuit arrangements for operating electroluminescent light sources (for operating light emitting diodes H05B45/00)
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H05B45/00 0 Circuit arrangements for operating light-emitting diodes [LED]
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H05B45/10 1 Controlling the intensity of the light
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H05B45/12 2 using optical feedback
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H05B45/14 2 using electrical feedback from LEDs or from LED modules
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H05B45/18 2 using temperature feedback
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H05B45/20 1 Controlling the colour of the light
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H05B45/22 2 using optical feedback
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H05B45/24 2 using electrical feedback from LEDs or from LED modules
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H05B45/28 2 using temperature feedback
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H05B45/30 1 Driver circuits
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H05B45/305 2 Frequency-control circuits
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H05B45/31 2 Phase-control circuits
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H05B45/315 3 Reverse phase-control circuits
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H05B45/32 2 Pulse-control circuits
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H05B45/325 3 Pulse-width modulation [PWM]
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H05B45/327 3 Burst dimming
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H05B45/33 3 Pulse-amplitude modulation [PAM]
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H05B45/335 3 Pulse-frequency modulation [PFM]
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H05B45/34 2 Voltage stabilisation; Maintaining constant voltage
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H05B45/345 2 Current stabilisation; Maintaining constant current
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H05B45/347 2 Dynamic headroom control [DHC]
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H05B45/35 2 Balancing circuits
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H05B45/355 2 Power factor correction [PFC]; Reactive power compensation
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H05B45/357 2 specially adapted for retrofit LED light sources
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H05B45/3574 3 Emulating the electrical or functional characteristics of incandescent lamps
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H05B45/3575 4 by means of dummy loads or bleeder circuits, e.g. for dimmers
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H05B45/3577 4 Emulating the dimming characteristics, brightness or colour temperature of incandescent lamps
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H05B45/3578 3 Emulating the electrical or functional characteristics of discharge lamps
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H05B45/36 2 Circuits for reducing or suppressing harmonics, ripples or electromagnetic interferences [EMI]
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H05B45/37 2 Converter circuits
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H05B45/3725 3 Switched mode power supply [SMPS]
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H05B45/375 4 using buck topology
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H05B45/38 4 using boost topology
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H05B45/382 4 with galvanic isolation between input and output
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H05B45/385 4 using flyback topology
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H05B45/39 4 Circuits containing inverter bridges
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H05B45/392 4 wherein the LEDs are placed as freewheeling diodes at the secondary side of an isolation transformer
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H05B45/395 2 Linear regulators
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H05B45/397 3 Current mirror circuits
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H05B45/40 1 Details of LED load circuits
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H05B45/42 2 Antiparallel configurations
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H05B45/44 2 with an active control inside an LED matrix
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H05B45/46 3 having LEDs disposed in parallel lines
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H05B45/48 3 having LEDs organised in strings and incorporating parallel shunting devices
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H05B45/50 1 responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
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H05B45/52 2 in a parallel array of LEDs
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H05B45/54 2 in a series array of LEDs
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H05B45/56 2 involving measures to prevent abnormal temperature of the LEDs
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H05B45/58 2 involving end of life detection of LEDs
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H05B45/59 2 for reducing or suppressing flicker or glow effects
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H05B45/60 1 Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
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H05B46/00 0 Circuit arrangements for operating light sources using a charge of combustible material
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H05B47/00 0 Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
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H05B47/10 1 Controlling the light source
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H05B47/105 2 in response to determined parameters
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H05B47/11 3 by determining the brightness or colour temperature of ambient light
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H05B47/115 3 by determining the presence or movement of objects or living beings
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H05B47/12 4 by detecting audible sound
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H05B47/125 4 by using cameras
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H05B47/13 4 by using passive infrared detectors
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H05B47/135 3 by determining the type of light source being controlled (electrical parameters of light source being controlled H05B47/14)
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H05B47/14 3 by determining electrical parameters of the light source
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H05B47/155 2 Coordinated control of two or more light sources
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H05B47/16 2 by timing means
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H05B47/165 2 following a pre-assigned programmed sequence; Logic control [LC]
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H05B47/17 2 Operational modes, e.g. switching from manual to automatic mode or prohibiting specific operations
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H05B47/175 2 by remote control
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H05B47/18 3 via data-bus transmission
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H05B47/185 3 via power line carrier transmission
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H05B47/19 3 via wireless transmission
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H05B47/195 4 the transmission using visible or infrared light
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H05B47/20 1 Responsive to malfunctions or to light source life; for protection
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H05B47/21 2 of two or more light sources connected in parallel
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H05B47/22 3 {with communication between the lamps and a central unit}
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H05B47/23 2 of two or more light sources connected in series
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H05B47/235 3 {with communication between the lamps and a central unit}
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H05B47/24 2 Circuit arrangements for protecting against overvoltage
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H05B47/25 2 Circuit arrangements for protecting against overcurrent
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H05B47/26 2 Circuit arrangements for protecting against earth faults
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H05B47/28 2 Circuit arrangements for protecting against abnormal temperature
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H05B47/29 2 Circuits providing for substitution of the light source in case of its failure
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H05B2203/00 0 Aspects relating to Ohmic resistive heating covered by group H05B3/00
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H05B2203/002 1 Heaters using a particular layout for the resistive material or resistive elements
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H05B2203/003 2 using serpentine layout
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H05B2203/004 2 using zigzag layout
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H05B2203/005 2 using multiple resistive elements or resistive zones isolated from each other
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H05B2203/006 2 using interdigitated electrodes
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H05B2203/007 2 using multiple electrically connected resistive elements or resistive zones
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H05B2203/008 2 with layout including a portion free of resistive material, e.g. communication window
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H05B2203/009 1 Heaters using conductive material in contact with opposing surfaces of the resistive element or resistive layer
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H05B2203/01 2 Heaters comprising a particular structure with multiple layers
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H05B2203/011 1 Heaters using laterally extending conductive material as connecting means
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H05B2203/012 1 Heaters using non- flexible resistive rods or tubes not provided for in H05B3/42
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H05B2203/013 1 Heaters using resistive films or coatings
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H05B2203/014 1 Heaters using resistive wires or cables not provided for in H05B3/54
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H05B2203/015 2 Heater wherein the heating element is interwoven with the textile
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H05B2203/016 1 Heaters using particular connecting means
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H05B2203/017 1 Manufacturing methods or apparatus for heaters
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H05B2203/018 1 Heaters using heating elements comprising mosi2
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H05B2203/019 1 Heaters using heating elements having a negative temperature coefficient
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H05B2203/02 1 Heaters using heating elements having a positive temperature coefficient
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H05B2203/021 1 Heaters specially adapted for heating liquids
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H05B2203/022 1 Heaters specially adapted for heating gaseous material
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H05B2203/023 2 Heaters of the type used for electrically heating the air blown in a vehicle compartment by the vehicle heating system
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H05B2203/024 2 Heaters using beehive flow through structures
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H05B2203/025 1 Heaters specially adapted for glass melting or glass treatment
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H05B2203/026 1 Heaters specially adapted for floor heating
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H05B2203/027 1 Heaters specially adapted for glow plug igniters
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H05B2203/028 1 Heaters specially adapted for trays or plates to keep food or liquids hot
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H05B2203/029 1 Heaters specially adapted for seat warmers
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H05B2203/03 1 Heaters specially adapted for heating hand held tools
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H05B2203/031 1 Heaters specially adapted for heating the windscreen wiper area
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H05B2203/032 1 Heaters specially adapted for heating by radiation heating
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H05B2203/033 1 Heater including particular mechanical reinforcing means
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H05B2203/034 1 Heater using resistive elements made of short fibbers of conductive material
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H05B2203/035 1 Electrical circuits used in resistive heating apparatus
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H05B2203/036 1 Heaters specially adapted for garment heating
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H05B2203/037 1 Heaters with zones of different power density
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H05B2206/00 0 Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
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H05B2206/02 1 Induction heating
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H05B2206/022 2 Special supports for the induction coils
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H05B2206/023 2 using the curie point of the material in which heating current is being generated to control the heating temperature
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H05B2206/024 2 the resistive heat generated in the induction coil is conducted to the load
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H05B2206/04 1 Heating using microwaves
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H05B2206/042 2 Microwave oven combined with a toaster or including a toaster
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H05B2206/043 2 Methods or circuits intended to extend the life of the magnetron
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H05B2206/044 2 Microwave heating devices provided with two or more magnetrons or microwave sources of other kind
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H05B2206/045 2 Microwave disinfection, sterilization, destruction of waste...
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H05B2206/046 2 Microwave drying of wood, ink, food, ceramic, sintering of ceramic, clothes, hair
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H05B2213/00 0 Aspects relating both to resistive heating and to induction heating, covered by H05B3/00 and H05B6/00
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H05B2213/02 1 Stirring of melted material in melting furnaces
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H05B2213/03 1 Heating plates made out of a matrix of heating elements that can define heating areas adapted to cookware randomly placed on the heating plate
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H05B2213/04 1 Heating plates with overheat protection means
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H05B2213/05 1 Heating plates with pan detection means
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H05B2213/06 1 Cook-top or cookware capable of communicating with each other
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H05B2213/07 1 Heating plates with temperature control means
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H05B2214/00 0 Aspects relating to resistive heating, induction heating and heating using microwaves, covered by groups H05B3/00, H05B6/00
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H05B2214/02 1 Heaters specially designed for de-icing or protection against icing
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H05B2214/03 1 Heating of hydrocarbons
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H05B2214/04 1 Heating means manufactured by using nanotechnology
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H05C ELECTRIC CIRCUITS OR APPARATUS SPECIALLY DESIGNED FOR USE IN EQUIPMENT FOR KILLING, STUNNING, OR GUIDING LIVING BEINGS (stationary means for catching or killing insects by electric means A01M1/22; apparatus for the destruction of noxious animals, other than insects, by electricity A01M19/00; electric traps for animals A01M23/38; scaring devices for animals A01M29/00; slaughtering or stunning by electric current A22B3/06)
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H05C1/00 0 Circuits or apparatus for generating electric shock effects
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H05C1/02 1 providing continuous feeding of dc or ac voltage
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H05C1/04 1 providing pulse voltages (mechanical self-interrupters H01H; electronic pulse-generators H03K)
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H05C1/06 2 operating only when touched
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H05C3/00 0 Other circuits or apparatus
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H05F STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY (electrostatic machines H02N; uses of electricity in performing operations, e.g. precipitation, see the relevant subclasses for the operations)
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H05F1/00 0 Preventing the formation of electrostatic charges
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H05F1/02 1 by surface treatment
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H05F3/00 0 Carrying-off electrostatic charges ({from shoes A43B7/36}; from living beings A61N1/14; {from tyres B60C19/08; from vehicles B60R16/06; from aircraft B64D45/02; from large containers B65D90/46})
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H05F3/02 1 by means of earthing connections
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H05F3/025 2 {Floors or floor coverings specially adapted for discharging static charges}
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H05F3/04 1 by means of spark gaps or other discharge devices (devices providing for corona discharge per se H01T19/00)
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H05F3/06 1 by means of ionising radiation
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H05F7/00 0 Use of naturally-occurring electricity, {e.g. lightning or static electricity}
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H05G X-RAY TECHNIQUE (investigating or analysing materials by the use of X-rays G01N23/00; apparatus for X-ray photography G03B42/02; X-ray tubes H01J35/00; TV systems having X-ray input H04N5/321)
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H05G1/00 0 X-ray apparatus involving X-ray tubes; Circuits therefor
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H05G1/02 1 Constructional details
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H05G1/025 2 {Means for cooling the X-ray tube or the generator}
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H05G1/04 2 Mounting the X-ray tube within a closed housing
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H05G1/06 3 X-ray tube and at least part of the power supply apparatus being mounted within the same housing
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H05G1/08 1 Electrical details
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H05G1/085 2 {Circuit arrangements particularly adapted for X-ray tubes having a control grid}
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H05G1/10 2 Power supply arrangements for feeding the X-ray tube {(supply circuits with converters in general H02M; supply circuits for emitters and amplifiers H04B1/16 - H04B1/1623)}
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H05G1/12 3 with dc or rectified single-phase ac {or double-phase}
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H05G1/14 3 with single-phase low-frequency ac {also when a rectifer element is in series with the X-ray tube}
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H05G1/16 4 Reducing the peak-inverse voltage
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H05G1/18 3 with polyphase ac of low frequency {rectified}
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H05G1/20 3 with high-frequency ac; with pulse trains {(pulse generators in general H03K3/00, H03K4/00)}
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H05G1/22 3 with single pulses
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H05G1/24 4 Obtaining pulses by using energy storage devices
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H05G1/26 2 Measuring, controlling or protecting (measuring X-ray radiation G01T)
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H05G1/265 3 {Measurements of current, voltage or power}
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H05G1/28 3 Measuring or recording actual exposure time; Counting number of exposures; Measuring required exposure time
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H05G1/30 3 Controlling
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H05G1/32 4 Supply voltage of the X-ray apparatus or tube
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H05G1/34 4 Anode current, heater current or heater voltage of X-ray tube
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H05G1/36 4 Temperature of anode; Brightness of image {power (electrical temperature regulating in general G05D23/19)}
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H05G1/38 4 Exposure time {(time switches in general H01H43/00 and subgroups)}
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H05G1/40 5 using adjustable time-switch
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H05G1/42 5 using arrangements for switching when a predetermined dose of radiation has been applied, e.g. in which the switching instant is determined by measuring the electrical energy supplied to the tube
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H05G1/44 6 in which the switching instant is determined by measuring the amount of radiation directly {(dosimetry in general G01T1/02)}
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H05G1/46 4 Combined control of different quantities, e.g. exposure time as well as voltage or current
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H05G1/48 4 Compensating the voltage drop occurring at the instant of switching-on of the apparatus
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H05G1/50 4 Passing the tube current only during a restricted portion of the voltage waveform
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H05G1/52 4 Target size or shape; Direction of electron beam, e.g. in tubes with one anode and more than one cathode
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H05G1/54 3 Protecting {or lifetime prediction}(overload protection combined with control H05G1/46)
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H05G1/56 2 Switching-on; Switching-off
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H05G1/58 2 Switching arrangements for changing-over from one mode of operation to another, e.g. from radioscopy to radiography, from radioscopy to irradiation {or from one tube voltage to another}
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H05G1/60 2 Circuit arrangements for obtaining a series of X-ray photographs or for X-ray cinematography
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H05G1/62 2 Circuit arrangements for obtaining X-ray photography at predetermined instants in the movement of an object, e.g. X-ray stroboscopy
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H05G1/64 2 Circuit arrangements for X-ray apparatus incorporating image intensifiers
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H05G1/66 2 Circuit arrangements for X-ray tubes with target movable relatively to the anode
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H05G1/68 2 Circuit arrangements for Lilienfield tubes; Circuit arrangements for gas-filled X-ray tubes
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H05G1/70 2 Circuit arrangements for X-ray tubes with more than one anode; Circuit arrangements for apparatus comprising more than one X ray tube {or more than one cathode (H05G1/58 takes precedence)}
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H05G2/00 0 Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma (X-ray lasers H01S4/00)
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H05G2/001 1 {X-ray radiation generated from plasma (plasma for generation of electrons to be accelerated towards an anode H01J35/00)}
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H05G2/003 2 {being produced from a liquid or gas}
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H05G2/005 3 {containing a metal as principal radiation generating component}
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H05G2/006 3 {details of the ejection system, e.g. constructional details of the nozzle}
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H05G2/008 2 {involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma}
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H05H PLASMA TECHNIQUE (fusion reactors G21B; ion-beam tubes H01J27/00; magnetohydrodynamic generators H02K44/08; producing X-rays involving plasma generation H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS (obtaining neutrons from radioactive sources G21, e.g. G21B, G21C, G21G); PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS (atomic clocks G04F5/14; devices using stimulated emission H01S; frequency regulation by comparison with a reference frequency determined by energy levels of molecules, atoms, or subatomic particles H03L7/26)
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H05H1/00 0 Generating plasma; Handling plasma
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H05H1/0006 1 {Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature}
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H05H1/0012 2 {using electromagnetic or particle radiation, e.g. interferometry}
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H05H1/0018 3 {Details}
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H05H1/0025 3 {by using photoelectric means (H05H1/0031 - H05H1/0043 take precedence)}
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H05H1/0031 3 {by interferrometry}
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H05H1/0037 3 {by spectrometry}
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H05H1/0043 3 {by using infra-red or ultra-violet radiation}
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H05H1/005 3 {by using X-rays or alpha rays}
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H05H1/0056 3 {by using neutrons}
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H05H1/0062 3 {by using microwaves}
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H05H1/0068 2 {by thermal means}
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H05H1/0075 3 {Langmuir probes}
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H05H1/0081 2 {by electric means}
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H05H1/0087 2 {by magnetic means}
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H05H1/0093 2 {by acoustic means, e.g. ultrasonic}
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H05H1/01 1 {Handling plasma, e.g. of subatomic particles}
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H05H1/02 1 Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma ({G21B1/00 takes precedence;} electron optics H01J)
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H05H1/03 2 using electrostatic fields
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H05H1/04 2 using magnetic fields substantially generated by the discharge in the plasma
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H05H1/06 3 Longitudinal pinch devices
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H05H1/08 3 Theta pinch devices {, e.g. SCYLLA}
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H05H1/10 2 using externally-applied magnetic fields only {, e.g. Q-machines, Yin-Yang, base-ball}
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H05H1/105 3 {using magnetic pumping}
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H05H1/11 3 using cusp configuration (H05H1/14 takes precedence)
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H05H1/12 3 wherein the containment vessel forms a closed or nearly closed loop {(G21B1/05 takes precedence)}
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H05H1/14 3 wherein the containment vessel is straight and has magnetic mirrors
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H05H1/16 2 using externally-applied electric and magnetic fields
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H05H1/18 3 wherein the fields oscillate at very high frequency, e.g. in the microwave range {, e.g. using cyclotron resonance}
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H05H1/20 2 Ohmic heating
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H05H1/22 2 for injection heating {(G21B1/15 takes precedence)}
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H05H1/24 1 Generating plasma {(nuclear fusion reactors G21B1/00; gas-filled discharge reactors H01J37/32)}
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H05H1/2406 2 {using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes}
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H05H1/2418 3 {the electrodes being embedded in the dielectric}
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H05H1/2425 3 {the electrodes being flush with the dielectric}
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H05H1/2431 3 {using cylindrical electrodes, e.g. rotary drums}
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H05H1/2437 3 {Multilayer systems}
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H05H1/2439 3 {Surface discharges, e.g. air flow control}
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H05H1/2441 3 {characterised by the physical-chemical properties of the dielectric, e.g. porous dielectric}
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H05H1/2443 3 {the plasma fluid flowing through a dielectric tube}
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H05H1/245 4 {the plasma being activated using internal electrodes}
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H05H1/246 4 {the plasma being activated using external electrodes (H05H1/245 takes precedence)}
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H05H1/2465 4 {the plasma being activated by inductive coupling, e.g. using coiled electrodes}
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H05H1/247 2 {using discharges in liquid media}
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H05H1/2475 2 {using acoustic pressure discharges}
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H05H1/2481 3 {the plasma being activated using piezoelectric actuators}
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H05H1/2487 3 {the plasma being activated using mechanical actuators}
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H05H1/2493 3 {the plasma being activated using horns}
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H05H1/26 2 Plasma torches
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H05H1/28 3 Cooling arrangements
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H05H1/30 3 using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/28 takes precedence)
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H05H1/32 3 using an arc (H05H1/28 takes precedence)
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H05H1/34 4 Details, e.g. electrodes, nozzles
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H05H1/3405 5 {Arrangements for stabilising or constricting the arc, e.g. by an additional gas flow}
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H05H1/341 5 {Arrangements for providing coaxial protecting fluids}
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H05H1/3421 5 {Transferred arc or pilot arc mode}
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H05H1/3423 5 {Connecting means, e.g. electrical connecting means or fluid connections}
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H05H1/3425 5 {Melting or consuming electrodes}
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H05H1/3431 5 {Coaxial cylindrical electrodes}
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H05H1/3436 5 {Hollow cathodes with internal coolant flow}
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H05H1/3442 5 {Cathodes with inserted tip}
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H05H1/3447 5 {Rod-like cathodes}
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H05H1/3452 5 {Supplementary electrodes between cathode and anode, e.g. cascade}
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H05H1/3457 5 {Nozzle protection devices}
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H05H1/3463 5 {Oblique nozzles}
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H05H1/3468 5 {Vortex generators}
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H05H1/3473 5 {Safety means}
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H05H1/3478 5 {Geometrical details}
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H05H1/3484 5 {Convergent-divergent nozzles}
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H05H1/3489 5 {Means for contact starting}
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H05H1/3494 5 {Means for controlling discharge parameters}
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H05H1/36 5 Circuit arrangements (H05H1/38, H05H1/40 take precedence)
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H05H1/38 5 Guiding or centering of electrodes
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H05H1/40 5 using applied magnetic fields, e.g. for focusing or rotating the arc {(cf. B23K9/08, B23K9/073)}
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H05H1/42 4 with provisions for introducing materials into the plasma, e.g. powder, liquid (electrostatic spraying, spraying apparatus with means for charging the spray electrically B05B5/00 {cf. B23K9/324, B05B7/22; arc stabilising or constricting arrangements H05H1/3405; coaxial protecting fluids H05H1/341})
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H05H1/44 4 using more than one torch
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H05H1/46 2 using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
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H05H1/461 3 {Microwave discharges}
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H05H1/4615 4 {using surface waves}
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H05H1/4622 4 {using waveguides}
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H05H1/463 4 {using antennas or applicators}
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H05H1/4637 4 {using cables}
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H05H1/4645 3 {Radiofrequency discharges}
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H05H1/4652 4 {using inductive coupling means, e.g. coils}
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H05H1/466 4 {using capacitive coupling means, e.g. electrodes}
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H05H1/4697 2 {using glow discharges}
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H05H1/47 2 {using corona discharges}
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H05H1/471 3 {Pointed electrodes}
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H05H1/473 3 {Cylindrical electrodes, e.g. rotary drums}
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H05H1/475 3 {Filamentary electrodes}
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H05H1/477 3 {Segmented electrodes}
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H05H1/48 2 using an arc (H05H1/26 takes precedence)
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H05H1/481 3 {Hollow cathodes}
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H05H1/482 3 {Arrangements to provide gliding arc discharges}
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H05H1/484 3 {Arrangements to provide plasma curtains or plasma showers}
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H05H1/486 3 {Arrangements to provide capillary discharges}
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H05H1/488 3 {Liquid electrodes}
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H05H1/50 3 and using applied magnetic fields, e.g. for focusing or rotating the arc
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H05H1/52 2 using exploding wires or spark gaps (H05H1/26 takes precedence; spark gaps in general H01T)
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H05H1/54 1 Plasma accelerators
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H05H3/00 0 Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
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H05H3/02 1 Molecular or atomic beam generation {(charge exchange devices G21K1/14; polarising devices G21K1/16; using resonance or molecular beams for analysing or investigating materials G01N24/002; atomic clock G04F5/14; beam masers H01S1/06)}
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H05H3/04 1 Acceleration by electromagnetic wave pressure
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H05H3/06 1 Generating neutron beams (targets for producing nuclear reactions H05H6/00; neutron sources G21G4/02)
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H05H5/00 0 Direct voltage accelerators; Accelerators using single pulses (H05H3/06 takes precedence)
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H05H5/02 1 Details (targets for producing nuclear reactions H05H6/00)
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H05H5/03 2 Accelerating tubes (vessels or containers of electric discharge tubes with improved potential distribution over surface of vessel H01J5/06; shields of X-ray tubes associated with vessels or containers H01J35/16)
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H05H5/04 1 energised by electrostatic generators
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H05H5/042 2 {of the van de Graaf type}
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H05H5/045 2 {High voltage cascades, e.g. Greinacher cascade}
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H05H5/047 2 {Pulsed generators}
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H05H5/06 1 Multistage accelerators
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H05H5/063 2 {Tandems}
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H05H5/066 2 {Onion-like structures}
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H05H5/08 1 Particle accelerators using step-up transformers, e.g. resonance transformers
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H05H6/00 0 Targets for producing nuclear reactions (supports for targets or objects to be irradiated G21K5/08 {; preparation of tritium C01B4/00; targets, e.g. pellets for fusion reactions by laser or charged particles beam injection H05H1/22})
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H05H2006/002 1 {Windows}
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H05H6/005 1 {Polarised targets (polarising devices, e.g. for obtaining a polarised ion beam G21K1/16)}
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H05H2006/007 1 {Radiation protection arrangements, e.g. screens}
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H05H7/00 0 Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
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H05H7/001 1 {Arrangements for beam delivery or irradiation (irradiation systems per se G21K5/00)}
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H05H2007/002 2 {for modifying beam trajectory, e.g. gantries}
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H05H2007/004 2 {for modifying beam energy, e.g. spread out Bragg peak devices}
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H05H2007/005 2 {for modifying beam emittance, e.g. stochastic cooling devices, stripper foils}
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H05H2007/007 2 {for focusing the beam to irradiation target}
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H05H2007/008 2 {for measuring beam parameters}
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H05H7/02 1 Circuits or systems for supplying or feeding radio-frequency energy (radio-frequency generators H03B)
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H05H2007/022 2 {Pulsed systems}
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H05H2007/025 2 {Radiofrequency systems}
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H05H2007/027 2 {Microwave systems}
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H05H7/04 1 Magnet systems {, e.g. undulators, wigglers (free-electron laser H01S3/0903)}; Energisation thereof
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H05H2007/041 2 {for beam bunching, e.g. undulators}
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H05H2007/043 2 {for beam focusing}
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H05H2007/045 2 {for beam bending}
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H05H2007/046 2 {for beam deflection}
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H05H2007/048 2 {for modifying beam trajectory, e.g. gantry systems}
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H05H7/06 1 Two-beam arrangements; Multi-beam arrangements {storage rings}; Electron rings
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H05H2007/065 2 {Multi-beam merging, e.g. funneling}
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H05H7/08 1 Arrangements for injecting particles into orbits
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H05H2007/081 2 {Sources}
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H05H2007/082 3 {Ion sources, e.g. ECR, duoplasmatron, PIG, laser sources}
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H05H2007/084 3 {Electron sources}
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H05H2007/085 2 {by electrostatic means}
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H05H2007/087 2 {by magnetic means}
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H05H2007/088 2 {by mechanical means, e.g. stripping foils}
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H05H7/10 1 Arrangements for ejecting particles from orbits
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H05H7/12 1 Arrangements for varying final energy of beam
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H05H2007/122 2 {by electromagnetic means, e.g. RF cavities}
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H05H2007/125 2 {by mechanical means, e.g. stripping foils}
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H05H2007/127 2 {by emittance variation, e.g. stochastic cooling}
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H05H7/14 1 Vacuum chambers (H05H5/03 takes precedence)
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H05H7/16 2 of the waveguide type
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H05H7/18 2 Cavities; Resonators {(travelling-wave tubes H01J23/18; hyperfrequency cavities in general H01P7/04, H01P7/06)}
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H05H7/20 3 with superconductive walls
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H05H7/22 1 Details of linear accelerators, e.g. drift tubes (H05H7/02 - H05H7/20 take precedence)
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H05H2007/222 2 {drift tubes}
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H05H2007/225 2 {coupled cavities arrangements}
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H05H2007/227 2 {power coupling, e.g. coupling loops}
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H05H9/00 0 Linear accelerators
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H05H9/005 1 {Dielectric wall accelerators}
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H05H9/02 1 Travelling-wave linear accelerators {(travelling-wave tubes H01J25/34)}
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H05H9/04 1 Standing-wave linear accelerators
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H05H9/041 2 {Hadron LINACS}
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H05H9/042 3 {Drift tube LINACS}
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H05H9/044 3 {Coupling cavity LINACS, e.g. side coupled}
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H05H9/045 3 {Radio frequency quadrupoles}
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H05H9/047 3 {Hybrid systems}
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H05H9/048 2 {Lepton LINACS}
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H05H11/00 0 Magnetic induction accelerators, e.g. betatrons
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H05H11/02 1 Air-cored betatrons
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H05H11/04 1 Biased betatrons
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H05H13/00 0 Magnetic resonance accelerators; Cyclotrons {(strophotrons, turbine tubes H01J25/62)}
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H05H13/005 1 {Cyclotrons}
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H05H13/02 1 Synchrocyclotrons, i.e. frequency modulated cyclotrons
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H05H13/04 1 Synchrotrons
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H05H13/06 1 Air-cored magnetic resonance accelerators
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H05H13/08 1 Alternating-gradient magnetic resonance accelerators
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H05H13/085 2 {Fixed-field alternating gradient accelerators [FFAG]}
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H05H13/10 1 Accelerators comprising one or more linear accelerating sections and bending magnets or the like to return the charged particles in a trajectory parallel to the first accelerating section, e.g. microtrons {or rhodotrons}
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H05H15/00 0 Methods or devices for acceleration of charged particles not otherwise provided for {, e.g. wakefield accelerators}
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H05H2240/00 0 Testing
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H05H2240/10 1 at atmospheric pressure
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H05H2240/20 1 Non-thermal plasma
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H05H2242/00 0 Auxiliary systems
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H05H2242/10 1 Cooling arrangements
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H05H2242/20 1 Power circuits
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H05H2242/22 2 DC, AC or pulsed generators
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H05H2242/24 2 Radiofrequency or microwave generators
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H05H2242/26 2 Matching networks
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H05H2245/00 0 Applications of plasma devices
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H05H2245/10 1 Treatment of gases
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H05H2245/15 2 Ambient air; Ozonisers
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H05H2245/17 2 Exhaust gases
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H05H2245/20 1 Treatment of liquids
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H05H2245/30 1 Medical applications
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H05H2245/32 2 Surgery, e.g. scalpels, blades or bistoury; Treatments inside the body
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H05H2245/34 2 Skin treatments, e.g. disinfection or wound treatment
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H05H2245/36 2 Sterilisation of objects, liquids, volumes or surfaces
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H05H2245/40 1 Surface treatments
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H05H2245/42 2 Coating or etching of large items
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H05H2245/50 1 Production of nanostructures
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H05H2245/60 1 Portable devices
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H05H2245/70 1 Automotive applications, e.g. engines
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H05H2245/80 1 Burners or furnaces for heat generation, for fuel combustion or for incineration of wastes
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H05H2277/00 0 Applications of particle accelerators
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H05H2277/10 1 Medical devices
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H05H2277/11 2 Radiotherapy
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H05H2277/113 3 Diagnostic systems
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H05H2277/116 3 Isotope production
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H05H2277/12 1 Ion implantation
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H05H2277/13 1 Nuclear physics, e.g. spallation sources, accelerator driven systems, search or generation of exotic elements
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H05H2277/14 1 Portable devices
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H05H2277/1405 2 Detection systems, e.g. for safety
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H05K PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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H05K1/00 0 Printed circuits
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H05K1/02 1 Details
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H05K1/0201 2 {Thermal arrangements, e.g. for cooling, heating or preventing overheating}
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H05K1/0203 3 {Cooling of mounted components (H05K1/0272 takes precedence)}
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H05K1/0204 4 {using means for thermal conduction connection in the thickness direction of the substrate (H05K1/0207 takes precedence)}
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H05K1/0206 5 {by printed thermal vias}
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H05K1/0207 4 {using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes}
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H05K1/0209 4 {External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings}
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H05K1/021 4 {Components thermally connected to metal substrates or heat-sinks by insert mounting}
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H05K1/0212 3 {Printed circuits or mounted components having integral heating means}
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H05K1/0213 2 {Electrical arrangements not otherwise provided for}
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H05K1/0215 3 {Grounding of printed circuits by connection to external grounding means}
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H05K1/0216 3 {Reduction of cross-talk, noise or electromagnetic interference (grounding H05K1/0215)}
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H05K1/0218 4 {by printed shielding conductors, ground planes or power plane (H05K1/0236 takes precedence)}
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H05K1/0219 5 {Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors}
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H05K1/0221 6 {Coaxially shielded signal lines comprising a continuous shielding layer partially or wholly surrounding the signal lines}
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H05K1/0222 6 {for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence}
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H05K1/0224 5 {Patterned shielding planes, ground planes or power planes (H05K1/0253 takes precedence)}
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H05K1/0225 6 {Single or multiple openings in a shielding, ground or power plane (H05K1/0227 takes precedence)}
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H05K1/0227 6 {Split or nearly split shielding or ground planes}
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H05K1/0228 4 {Compensation of cross-talk by a mutually correlated lay-out of printed circuit traces, e.g. for compensation of cross-talk in mounted connectors (balanced signal pairs H05K1/0245)}
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H05K1/023 4 {using auxiliary mounted passive components or auxiliary substances (printed passive components H05K1/16)}
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H05K1/0231 5 {Capacitors or dielectric substances}
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H05K1/0233 5 {Filters, inductors or a magnetic substance}
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H05K1/0234 5 {Resistors or by disposing resistive or lossy substances in or near power planes (H05K1/0246 takes precedence)}
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H05K1/0236 4 {Electromagnetic band-gap structures}
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H05K1/0237 3 {High frequency adaptations (H05K1/0216 takes precedence)}
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H05K1/0239 4 {Signal transmission by AC coupling}
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H05K1/024 4 {Dielectric details, e.g. changing the dielectric material around a transmission line}
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H05K1/0242 4 {Structural details of individual signal conductors, e.g. related to the skin effect}
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H05K1/0243 4 {Printed circuits associated with mounted high frequency components}
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H05K1/0245 4 {Lay-out of balanced signal pairs, e.g. differential lines or twisted lines}
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H05K1/0246 4 {Termination of transmission lines}
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H05K1/0248 4 {Skew reduction or using delay lines}
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H05K1/025 4 {Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance (H05K1/024 and H05K1/0243 take precedence; for semiconductor devices H01L23/66)}
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H05K1/0251 5 {related to vias or transitions between vias and transmission lines}
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H05K1/0253 5 {Impedance adaptations of transmission lines by special lay-out of power planes, e.g. providing openings (H05K1/0251 takes precedence)}
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H05K1/0254 3 {High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection (electrostatic discharge protection for electric apparatus in general H05K9/0067, H05K9/0079); Arrangements for regulating voltages or for using plural voltages}
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H05K1/0256 4 {Electrical insulation details, e.g. around high voltage areas}
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H05K1/0257 4 {Overvoltage protection}
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H05K1/0259 5 {Electrostatic discharge [ESD] protection}
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H05K1/026 5 {Spark gaps}
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H05K1/0262 4 {Arrangements for regulating voltages or for using plural voltages}
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H05K1/0263 3 {High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board (H05K1/0293 takes precedence)}
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H05K1/0265 4 {characterized by the lay-out of or details of the printed conductors, e.g. reinforced conductors, redundant conductors, conductors having different cross-sections}
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H05K1/0266 2 {Marks, test patterns or identification means}
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H05K1/0268 3 {for electrical inspection or testing}
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H05K1/0269 3 {for visual or optical inspection}
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H05K1/0271 2 {Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion}
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H05K1/0272 2 {Adaptations for fluid transport, e.g. channels, holes}
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H05K1/0274 2 {Optical details, e.g. printed circuits comprising integral optical means (H05K1/0269 takes precedence; coupling light guides with opto-electronic components G02B6/42)}
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H05K1/0275 2 {Security details, e.g. tampering prevention or detection}
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H05K1/0277 2 {Bendability or stretchability details (H05K1/038, H05K3/4691 take precedence)}
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H05K1/0278 3 {Rigid circuit boards or rigid supports of circuit boards locally made bendable, e.g. by removal or replacement of material}
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H05K1/028 3 {Bending or folding regions of flexible printed circuits (H05K1/0283 takes precedence)}
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H05K1/0281 4 {Reinforcement details thereof}
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H05K1/0283 3 {Stretchable printed circuits}
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H05K1/0284 2 {Details of three-dimensional rigid printed circuit boards (H05K1/119 takes precedence; shaping of the substrate H05K3/0014)}
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H05K1/0286 2 {Programmable, customizable or modifiable circuits (by programmable non-printed jumper connections H05K3/222)}
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H05K1/0287 3 {having an universal lay-out, e.g. pad or land grid patterns or mesh patterns}
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H05K1/0289 4 {having a matrix lay-out, i.e. having selectively interconnectable sets of X-conductors and Y-conductors in different planes}
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H05K1/029 3 {having a programmable lay-out, i.e. adapted for choosing between a few possibilities}
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H05K1/0292 3 {having a modifiable lay-out, i.e. adapted for engineering changes or repair (H05K1/0293 takes precedence)}
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H05K1/0293 3 {Individual printed conductors which are adapted for modification, e.g. fusable or breakable conductors, printed switches}
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H05K1/0295 3 {adapted for choosing between different types or different locations of mounted components}
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H05K1/0296 2 {Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295 (H05K1/11 takes precedence; lay-out adapted to mounted component configuration H05K1/18)}
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H05K1/0298 3 {Multilayer circuits}
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H05K1/03 2 Use of materials for the substrate
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H05K1/0306 3 {Inorganic insulating substrates, e.g. ceramic, glass}
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H05K1/0313 3 {Organic insulating material}
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H05K1/032 4 {consisting of one material}
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H05K1/0326 5 {containing O}
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H05K1/0333 5 {containing S}
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H05K1/034 5 {containing halogen}
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H05K1/0346 5 {containing N}
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H05K1/0353 4 {consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement}
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H05K1/036 5 {Multilayers with layers of different types}
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H05K1/0366 5 {reinforced, e.g. by fibres, fabrics (H05K1/036 takes precedence)}
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H05K1/0373 5 {containing additives, e.g. fillers (H05K1/036 takes precedence)}
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H05K1/038 3 {Textiles (used as reinforcing materials for organic insulating substrates H05K1/0366)}
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H05K1/0386 3 {Paper sheets (used as reinforcing materials for organic insulating substrates H05K1/0366)}
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H05K1/0393 3 {Flexible materials (H05K1/038 takes precedence; specific organic compositions are classified in H05K1/0313 and subgroups)}
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H05K1/05 3 Insulated {conductive substrates, e.g. insulated} metal substrate
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H05K1/053 4 {the metal substrate being covered by an inorganic insulating layer}
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H05K1/056 4 {the metal substrate being covered by an organic insulating layer}
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H05K1/09 2 Use of materials for the {conductive, e.g. } metallic pattern
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H05K1/092 3 {Dispersed materials, e.g. conductive pastes or inks}
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H05K1/095 4 {for polymer thick films, i.e. having a permanent organic polymeric binder}
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H05K1/097 4 {Inks comprising nanoparticles and specially adapted for being sintered at low temperature (H05K1/095 takes precedence)}
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H05K1/11 2 Printed elements for providing electric connections to or between printed circuits
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H05K1/111 3 {Pads for surface mounting, e.g. lay-out}
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H05K1/112 4 {directly combined with via connections}
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H05K1/113 5 {Via provided in pad; Pad over filled via}
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H05K1/114 5 {Pad being close to via, but not surrounding the via}
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H05K1/115 3 {Via connections; Lands around holes or via connections (H05K1/112 takes precedence)}
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H05K1/116 4 {Lands, clearance holes or other lay-out details concerning the surrounding of a via}
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H05K1/117 3 {Pads along the edge of rigid circuit boards, e.g. for pluggable connectors}
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H05K1/118 3 {specially for flexible printed circuits, e.g. using folded portions}
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H05K1/119 3 {Details of rigid insulating substrates therefor, e.g. three-dimensional details (H05K1/117 takes precedence)}
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H05K1/14 2 Structural association of two or more printed circuits (providing electric connection to or between printed circuits H05K1/11, H01R12/00)
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H05K1/141 3 {One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters (H05K1/142 and H05K1/147 take precedence)}
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H05K1/142 3 {Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit}
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H05K1/144 3 {Stacked arrangements of planar printed circuit boards}
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H05K1/145 3 {Arrangements wherein electric components are disposed between and simultaneously connected to two planar printed circuit boards, e.g. Cordwood modules}
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H05K1/147 3 {at least one of the printed circuits being bent or folded, e.g. by using a flexible printed circuit (H05K1/148 takes precedence)}
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H05K1/148 3 {Arrangements of two or more hingeably connected rigid printed circuit boards, i.e. connected by flexible means}
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H05K1/16 1 incorporating printed electric components, e.g. printed resistor, capacitor, inductor
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H05K1/162 2 {incorporating printed capacitors}
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H05K1/165 2 {incorporating printed inductors}
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H05K1/167 2 {incorporating printed resistors}
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H05K1/18 1 Printed circuits structurally associated with non-printed electric components ({H05K1/0201, H05K1/023, H05K1/0243, and} H05K1/16 take precedence)
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H05K1/181 2 {associated with surface mounted components}
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H05K1/182 2 {associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]}
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H05K1/183 3 {Components mounted in and supported by recessed areas of the printed circuit board}
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H05K1/184 3 {Components including terminals inserted in holes through the printed circuit board and connected to printed contacts on the walls of the holes or at the edges thereof or protruding over or into the holes}
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H05K1/185 3 {Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit (semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00)}
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H05K1/186 4 {manufactured by mounting on or connecting to patterned circuits before or during embedding}
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H05K1/187 5 {the patterned circuits being prefabricated circuits, which are not yet attached to a permanent insulating substrate, e.g. on a temporary carrier}
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H05K1/188 4 {manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component}
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H05K1/189 2 {characterised by the use of a flexible or folded printed circuit (H05K3/326 takes precedence)}
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H05K3/00 0 Apparatus or processes for manufacturing printed circuits
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H05K3/0002 1 {for manufacturing artworks for printed circuits}
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H05K3/0005 1 {for designing circuits by computer}
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H05K3/0008 1 {for aligning or positioning of tools relative to the circuit board (H05K3/4638, H05K3/4679 take precedence; for manufacturing assemblages of components H05K13/0015)}
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H05K3/0011 1 {Working of insulating substrates or insulating layers}
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H05K3/0014 2 {Shaping of the substrate, e.g. by moulding}
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H05K3/0017 2 {Etching of the substrate by chemical or physical means}
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H05K3/002 3 {by liquid chemical etching}
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H05K3/0023 3 {by exposure and development of a photosensitive insulating layer}
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H05K3/0026 3 {by laser ablation}
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H05K3/0029 4 {of inorganic insulating material}
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H05K3/0032 4 {of organic insulating material}
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H05K3/0035 5 {of blind holes, i.e. having a metal layer at the bottom}
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H05K3/0038 5 {combined with laser drilling through a metal layer}
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H05K3/0041 3 {by plasma etching}
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H05K3/0044 2 {Mechanical working of the substrate, e.g. drilling or punching (H05K3/0008 takes precedence)}
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H05K3/0047 3 {Drilling of holes}
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H05K3/005 3 {Punching of holes}
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H05K3/0052 3 {Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards}
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H05K3/0055 2 {After-treatment, e.g. cleaning or desmearing of holes}
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H05K3/0058 1 {Laminating printed circuit boards onto other substrates, e.g. metallic substrates (H05K1/0281 takes precedence)}
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H05K3/0061 2 {onto a metallic substrate, e.g. a heat sink (heat sinks for electric apparatus H05K7/20)}
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H05K3/0064 2 {onto a polymeric substrate}
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H05K3/0067 2 {onto an inorganic, non-metallic substrate}
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H05K3/007 1 {Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier (H05K1/187, H05K3/20 and H05K3/4682 take precedence)}
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H05K3/0073 1 {Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces}
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H05K3/0076 2 {characterised by the composition of the mask}
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H05K3/0079 2 {characterised by the method of application or removal of the mask (H05K3/0091 takes precedence)}
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H05K3/0082 2 {characterised by the exposure method of radiation-sensitive masks}
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H05K3/0085 1 {Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor (apparatus specially adapted for manufacturing assemblages of electric components, e.g. printed circuit boards, H05K13/00)}
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H05K3/0088 2 {for treatment of holes}
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H05K3/0091 1 {Apparatus for coating printed circuits using liquid non-metallic coating compositions}
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H05K3/0094 1 {Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement}
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H05K3/0097 1 {Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards (H05K3/0052 takes precedence)}
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H05K3/02 1 in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
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H05K3/022 2 {Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates}
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H05K3/025 3 {by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper}
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H05K3/027 2 {the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles}
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H05K3/04 2 the conductive material being removed mechanically, e.g. by punching
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H05K3/041 3 {by using a die for cutting the conductive material}
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H05K3/043 3 {by using a moving tool for milling or cutting the conductive material}
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H05K3/045 3 {by making a conductive layer having a relief pattern, followed by abrading of the raised portions}
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H05K3/046 3 {by selective transfer or selective detachment of a conductive layer}
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H05K3/048 4 {using a lift-off resist pattern or a release layer pattern}
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H05K3/06 2 the conductive material being removed chemically or electrolytically, e.g. by photo-etch process {(semi-additive methods H05K3/108)}
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H05K3/061 3 {Etching masks}
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H05K3/062 4 {consisting of metals or alloys or metallic inorganic compounds (H05K3/065 takes precedence)}
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H05K3/064 4 {Photoresists}
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H05K3/065 4 {applied by electrographic, electrophotographic or magnetographic methods}
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H05K3/067 3 {Etchants}
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H05K3/068 3 {Apparatus for etching printed circuits}
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H05K3/07 3 being removed electrolytically
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H05K3/08 2 the conductive material being removed by electric discharge, e.g. by spark erosion
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H05K3/10 1 in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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H05K3/101 2 {by casting or moulding of conductive material}
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H05K3/102 2 {by bonding of conductive powder, i.e. metallic powder (H05K3/12 takes precedence)}
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H05K3/103 2 {by bonding or embedding conductive wires or strips}
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H05K3/105 2 {by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam}
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H05K3/106 3 {by photographic methods}
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H05K3/107 2 {by filling grooves in the support with conductive material (H05K3/045, H05K3/101, H05K3/1258 and H05K3/465 take precedence)}
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H05K3/108 2 {by semi-additive methods; masks therefor (characterised by metallic etch mask H05K3/062; electroplating methods or apparatus H05K3/241)}
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H05K3/12 2 using {thick film techniques, e.g.} printing techniques to apply the conductive material {or similar techniques for applying conductive paste or ink patterns}
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H05K3/1208 3 {Pretreatment of the circuit board, e.g. modifying wetting properties; Patterning by using affinity patterns (providing shape patterns H05K3/1258; adhesion treatments H05K3/38)}
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H05K3/1216 3 {by screen printing or stencil printing}
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H05K3/1225 4 {Screens or stencils; Holders therefor}
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H05K3/1233 4 {Methods or means for supplying the conductive material and for forcing it through the screen or stencil}
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H05K3/1241 3 {by ink-jet printing or drawing by dispensing}
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H05K3/125 4 {by ink-jet printing}
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H05K3/1258 3 {by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern}
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H05K3/1266 3 {by electrographic or magnetographic printing}
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H05K3/1275 3 {by other printing techniques, e.g. letterpress printing, intaglio printing, lithographic printing, offset printing}
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H05K3/1283 3 {After-treatment of the printed patterns, e.g. sintering or curing methods}
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H05K3/1291 4 {Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets}
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H05K3/14 2 using spraying techniques to apply the conductive material {, e.g. vapour evaporation}
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H05K3/143 3 {Masks therefor (H05K3/048 takes precedence)}
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H05K3/146 3 {By vapour deposition}
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H05K3/16 3 by cathodic sputtering
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H05K3/18 2 using precipitation techniques to apply the conductive material
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H05K3/181 3 {by electroless plating (adhesives therefor H05K3/387)}
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H05K3/182 4 {characterised by the patterning method}
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H05K3/184 5 {using masks}
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H05K3/185 5 {by making a catalytic pattern by photo-imaging}
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H05K3/187 4 {means therefor, e.g. baths, apparatus}
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H05K3/188 3 {by direct electroplating}
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H05K3/20 2 by affixing prefabricated conductor pattern {(H05K1/187, H05K3/046, H05K3/4658, H05K3/4682 takes precedence)}
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H05K3/202 3 {using self-supporting metal foil pattern}
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H05K3/205 3 {using a pattern electroplated or electroformed on a metallic carrier}
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H05K3/207 3 {using a prefabricated paste pattern, ink pattern or powder pattern}
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H05K3/22 1 Secondary treatment of printed circuits {(H05K3/1283 takes precedence; embedding circuits in grooves by pressure H05K3/107)}
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H05K3/222 2 {Completing of printed circuits by adding non-printed jumper connections (printed jumper connections H05K3/4685)}
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H05K3/225 2 {Correcting or repairing of printed circuits (H05K1/0292, H05K3/222, H05K3/288, H05K3/4685 take precedence)}
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H05K3/227 2 {Drying of printed circuits}
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H05K3/24 2 Reinforcing the conductive pattern {(by solder coating H05K3/3457)}
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H05K3/241 3 {characterised by the electroplating method; means therefor, e.g. baths or apparatus}
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H05K3/242 4 {characterised by using temporary conductors on the printed circuit for electrically connecting areas which are to be electroplated}
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H05K3/243 3 {characterised by selective plating, e.g. for finish plating of pads (selective plating for making the circuit pattern H05K3/108, H05K3/182)}
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H05K3/244 3 {Finish plating of conductors, especially of copper conductors, e.g. for pads or lands (selective plating methods H05K3/243; finish plating of conductors made by printing techniques H05K3/246; solder as finish H05K3/3457, e.g. by plating H05K3/3473)}
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H05K3/245 3 {Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques}
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H05K3/246 4 {Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating}
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H05K3/247 4 {Finish coating of conductors by using conductive pastes, inks or powders}
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H05K3/248 5 {fired compositions for inorganic substrates}
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H05K3/249 5 {comprising carbon particles as main constituent}
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H05K3/26 2 Cleaning or polishing of the conductive pattern
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H05K3/28 2 Applying non-metallic protective coatings {(H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673)}
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H05K3/281 3 {by means of a preformed insulating foil (H05K3/284 takes precedence)}
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H05K3/282 3 {for inhibiting the corrosion of the circuit, e.g. for preserving the solderability}
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H05K3/284 3 {for encapsulating mounted components (H05K1/185 takes precedence)}
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H05K3/285 3 {Permanent coating compositions}
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H05K3/287 4 {Photosensitive compositions}
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H05K3/288 3 {Removal of non-metallic coatings, e.g. for repairing}
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H05K3/30 1 Assembling printed circuits with electric components, e.g. with resistor
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H05K3/301 2 {by means of a mounting structure (H05K3/325 takes precedence)}
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H05K3/303 2 {Surface mounted components, e.g. affixing before soldering, aligning means, spacing means (H05K3/32 takes precedence)}
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H05K3/305 3 {Affixing by adhesive}
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H05K3/306 2 {Lead-in-hole components, e.g. affixing or retention before soldering, spacing means (H05K3/32 takes precedence)}
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H05K3/308 3 {Adaptations of leads (connectors to printed circuits H01R12/00)}
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H05K3/32 2 electrically connecting electric components or wires to printed circuits
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H05K3/321 3 {by conductive adhesives}
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H05K3/323 4 {by applying an anisotropic conductive adhesive layer over an array of pads}
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H05K3/325 3 {by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor (adaptations of leads inserted in holes for press-fit connections H05K3/308)}
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H05K3/326 4 {the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits (H05K3/365 takes precedence)}
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H05K3/328 3 {by welding}
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H05K3/34 3 by soldering
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H05K3/3405 4 {Edge mounted components, e.g. terminals}
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H05K3/341 4 {Surface mounted components}
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H05K3/3415 5 {on both sides of the substrate or combined with lead-in-hole components}
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H05K3/3421 5 {Leaded components}
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H05K3/3426 6 {characterised by the leads}
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H05K3/3431 5 {Leadless components}
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H05K3/3436 6 {having an array of bottom contacts, e.g. pad grid array or ball grid array components}
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H05K3/3442 6 {having edge contacts, e.g. leadless chip capacitors, chip carriers}
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H05K3/3447 4 {Lead-in-hole components (H05K3/3415 takes precedence)}
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H05K3/3452 4 {Solder masks}
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H05K3/3457 4 {Solder materials or compositions; Methods of application thereof}
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H05K3/3463 5 {Solder compositions in relation to features of the printed circuit board or the mounting process}
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H05K3/3468 5 {Applying molten solder}
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H05K3/3473 5 {Plating of solder}
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H05K3/3478 5 {Applying solder preforms; Transferring prefabricated solder patterns}
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H05K3/3485 5 {Applying solder paste, slurry or powder (thick film methods for applying conductive paste or ink patterns H05K3/12)}
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H05K3/3489 4 {Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces}
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H05K3/3494 4 {Heating methods for reflowing of solder (using integral heating means H05K1/0212)}
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H05K3/36 1 Assembling printed circuits with other printed circuits {(H05K7/142 takes precedence)}
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H05K3/361 2 {Assembling flexible printed circuits with other printed circuits}
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H05K3/363 3 {by soldering}
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H05K3/365 3 {by abutting, i.e. without alloying process}
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H05K3/366 2 {substantially perpendicularly to each other (H05K3/361 takes precedence)}
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H05K3/368 2 {parallel to each other (H05K3/361 takes precedence)}
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H05K3/38 1 Improvement of the adhesion between the insulating substrate and the metal
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H05K3/381 2 {by special treatment of the substrate}
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H05K3/382 2 {by special treatment of the metal}
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H05K3/383 3 {by microetching}
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H05K3/384 3 {by plating}
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H05K3/385 3 {by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer}
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H05K3/386 2 {by the use of an organic polymeric bonding layer, e.g. adhesive}
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H05K3/387 3 {for electroless plating (H05K3/4661 takes precedence)}
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H05K3/388 2 {by the use of a metallic or inorganic thin film adhesion layer}
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H05K3/389 2 {by the use of a coupling agent, e.g. silane}
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H05K3/40 1 Forming printed elements for providing electric connections to or between printed circuits
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H05K3/4007 2 {Surface contacts, e.g. bumps (H05K3/4092 takes precedence; deposition of finish layers on pads H05K3/24; forming solder bumps H05K3/3457)}
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H05K3/4015 3 {using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres}
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H05K3/403 2 {Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof (H05K3/4092 takes precedence)}
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H05K3/4038 2 {Through-connections; Vertical interconnect access [VIA] connections (H05K3/403, H05K3/42 take precedence)}
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H05K3/4046 3 {using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire}
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H05K3/4053 3 {by thick-film techniques}
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H05K3/4061 4 {for via connections in inorganic insulating substrates}
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H05K3/4069 4 {for via connections in organic insulating substrates}
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H05K3/4076 3 {by thin-film techniques}
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H05K3/4084 3 {by deforming at least one of the conductive layers}
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H05K3/4092 2 {Integral conductive tabs, i.e. conductive parts partly detached from the substrate}
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H05K3/42 2 Plated through-holes {or plated via connections}
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H05K3/421 3 {Blind plated via connections (H05K3/422, H05K3/423 and H05K3/425 take precedence)}
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H05K3/422 3 {characterised by electroless plating method; pretreatment therefor}
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H05K3/423 3 {characterised by electroplating method}
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H05K3/424 4 {by direct electroplating}
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H05K3/425 3 {characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern}
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H05K3/426 4 {initial plating of through-holes in substrates without metal}
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H05K3/427 4 {initial plating of through-holes in metal-clad substrates}
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H05K3/428 4 {initial plating of through-holes in substrates having a metal pattern}
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H05K3/429 3 {Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers}
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H05K3/44 1 Manufacturing insulated metal core circuits {or other insulated electrically conductive core circuits (H05K3/0058, H05K3/4608, and H05K3/4641 take precedence)}
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H05K3/445 2 {having insulated holes or insulated via connections through the metal core}
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H05K3/46 1 Manufacturing multilayer circuits
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H05K3/4602 2 {characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated}
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H05K3/4605 3 {made from inorganic insulating material}
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H05K3/4608 3 {comprising an electrically conductive base or core}
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H05K3/4611 2 {by laminating two or more circuit boards (H05K3/4652 takes precedence)}
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H05K3/4614 3 {the electrical connections between the circuit boards being made during lamination}
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H05K3/4617 4 {characterized by laminating only or mainly similar single-sided circuit boards}
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H05K3/462 4 {characterized by laminating only or mainly similar double-sided circuit boards}
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H05K3/4623 3 {the circuit boards having internal via connections between two or more circuit layers before lamination, e.g. double-sided circuit boards (H05K3/462 takes precedence)}
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H05K3/4626 3 {characterised by the insulating layers or materials (H05K3/4688 takes precedence)}
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H05K3/4629 4 {laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets}
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H05K3/4632 4 {laminating thermoplastic or uncured resin sheets comprising printed circuits without added adhesive materials between the sheets}
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H05K3/4635 4 {laminating flexible circuit boards using additional insulating adhesive materials between the boards}
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H05K3/4638 3 {Aligning and fixing the circuit boards before lamination; Detecting or measuring the misalignment after lamination; Aligning external circuit patterns or via connections relative to internal circuits}
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H05K3/4641 3 {having integrally laminated metal sheets or special power cores}
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H05K3/4644 2 {by building the multilayer layer by layer, i.e. build-up multilayer circuits (making via holes in the insulating layers H05K3/0011; special circuit boards as base or core whereon the multilayer is built H05K3/4602)}
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H05K3/4647 3 {by applying an insulating layer around previously made via studs}
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H05K3/465 3 {by applying an insulating layer having channels for the next circuit layer}
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H05K3/4652 3 {Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern (H05K3/4647 takes precedence)}
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H05K3/4655 4 {by using a laminate characterized by the insulating layer (general-purpose insulating materials H05K1/03, H05K3/4673)}
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H05K3/4658 4 {characterized by laminating a prefabricated metal foil pattern, e.g. by transfer}
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H05K3/4661 3 {Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor (other insulating materials H05K3/387)}
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H05K3/4664 3 {Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders (H05K3/4647 takes precedence)}
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H05K3/4667 4 {characterized by using an inorganic intermediate insulating layer}
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H05K3/467 3 {Adding a circuit layer by thin film methods (H05K3/4647 takes precedence)}
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H05K3/4673 3 {Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer (similar methods for protective coatings H05K3/28)}
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H05K3/4676 4 {Single layer compositions}
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H05K3/4679 3 {Aligning added circuit layers or via connections relative to previous circuit layers}
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H05K3/4682 3 {Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil}
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H05K3/4685 2 {Manufacturing of cross-over conductors}
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H05K3/4688 2 {Composite multilayer circuits, i.e. comprising insulating layers having different properties (having a special base or central core H05K3/4602)}
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H05K3/4691 3 {Rigid-flexible multilayer circuits comprising rigid and flexible layers, e.g. having in the bending regions only flexible layers}
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H05K3/4694 3 {Partitioned multilayer circuits having adjacent regions with different properties, e.g. by adding or inserting locally circuit layers having a higher circuit density (H05K3/4691 takes precedence)}
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H05K3/4697 2 {having cavities, e.g. for mounting components (H05K3/4691 takes precedence)}
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H05K5/00 0 Casings, cabinets or drawers for electric apparatus
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H05K5/0004 1 {comprising several parts forming a closed casing}
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H05K5/0008 2 {assembled by screws}
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H05K5/0013 2 {assembled by resilient members}
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H05K5/0017 1 {with operator interface units}
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H05K5/0018 2 {having an electronic display}
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H05K5/0021 1 {Side-by-side or stacked arrangements}
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H05K5/0026 1 {provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units}
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H05K5/003 2 {having an integrally preformed housing}
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H05K5/0034 2 {having an overmolded housing covering the PCB}
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H05K5/0039 2 {having a tubular housing wherein the PCB is inserted longitudinally}
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H05K5/0043 2 {comprising a frame housing mating with two lids wherein the PCB is flat mounted on the frame housing}
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H05K5/0047 2 {having a two-part housing enclosing a PCB}
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H05K5/0052 3 {characterized by joining features of the housing parts}
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H05K5/0056 3 {characterized by features for protecting electronic components against vibration and moisture, e.g. potting, holders for relatively large capacitors}
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H05K5/006 3 {characterized by features for holding the PCB within the housing}
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H05K5/0065 2 {wherein modules are associated together, e.g. electromechanical assemblies, modular structures}
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H05K5/0069 2 {having connector relating features for connecting the connector pins with the PCB or for mounting the connector body with the housing}
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H05K5/0073 2 {having specific features for mounting the housing on an external structure}
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H05K5/0078 2 {specially adapted for acceleration sensors, e.g. crash sensors, airbag sensors}
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H05K5/0082 2 {specially adapted for transmission control units, e.g. gearbox controllers}
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H05K5/0086 1 {portable, e.g. battery operated apparatus (casings for switching devices H01H9/02)}
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H05K5/0091 1 {Housing specially adapted for small components (for resistors H01C; for capacitors H01G; for integrated circuits H01L23/00)}
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H05K5/0095 2 {hermetically-sealed}
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H05K5/02 1 Details
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H05K5/0204 2 {Mounting supporting structures on the outside of casings}
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H05K5/0208 2 {Interlock mechanisms; Means for avoiding unauthorised use or function, e.g. tamperproof}
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H05K5/0209 2 {Thermal insulation, e.g. for fire protection or for fire containment or for high temperature environments}
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H05K5/021 3 {specially adapted for data recorders, e.g. for flight recorders}
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H05K5/0211 3 {Thermal buffers, e.g. latent heat absorbers}
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H05K5/0212 2 {Condensation eliminators}
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H05K5/0213 2 {Venting apertures; Constructional details thereof}
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H05K5/0214 3 {with means preventing penetration of rain water or dust (semi-permeable membranes H05K5/0215, H05K5/0216)}
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H05K5/0215 3 {with semi-permeable membranes attached to casings}
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H05K5/0216 3 {Venting plugs comprising semi-permeable membranes}
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H05K5/0217 2 {Mechanical details of casings (covers, lids, hoods or members for covering apertures H05K5/03)}
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H05K5/0221 3 {Locks; Latches}
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H05K5/0226 3 {Hinges}
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H05K5/023 3 {Handles; Grips}
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H05K5/0234 3 {Feet; Stands; Pedestals, e.g. wheels for moving casing on floor}
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H05K5/0243 3 {for decorative purposes}
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H05K5/0247 2 {Electrical details of casings, e.g. terminals, passages for cables or wiring}
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H05K5/0252 2 {Labels, e.g. for identification, markings or configuration store}
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H05K5/0256 2 {of interchangeable modules or receptacles therefor, e.g. cartridge mechanisms}
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H05K5/026 3 {having standardized interfaces (flash memory cards G06K19/077)}
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H05K5/0265 4 {of PCMCIA type}
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H05K5/0269 5 {Card housings therefor, e.g. covers, frames, PCB}
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H05K5/0273 5 {having extensions for peripherals, e.g. LAN, antennas (details of antennas H01Q1/2275)}
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H05K5/0278 4 {of USB type (details relating to connectors H01R27/00)}
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H05K5/0282 3 {Adapters for connecting cards having a first standard in receptacles having a second standard}
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H05K5/0286 3 {Receptacles therefor, e.g. card slots, module sockets, card groundings}
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H05K5/0291 4 {for multiple cards}
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H05K5/0295 4 {having ejection mechanisms}
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H05K5/03 2 Covers
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H05K5/04 1 Metal casings
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H05K5/06 1 Hermetically-sealed casings {(specially adapted for small components H05K5/0095)}
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H05K5/061 2 {sealed by a gasket held between a removable cover and a body, e.g. O-ring, packing}
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H05K5/062 2 {sealed by a material injected between a non-removable cover and a body, e.g. hardening in situ}
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H05K5/063 2 {sealed by a labyrinth structure provided at the joining parts}
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H05K5/064 2 {sealed by potting, e.g. waterproof resin poured in a rigid casing}
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H05K5/065 2 {sealed by encapsulation, e.g. waterproof resin forming an integral casing, injection moulding}
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H05K5/066 2 {sealed by fusion of the joining parts without bringing material; sealed by brazing}
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H05K5/067 2 {containing a dielectric fluid}
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H05K5/068 2 {having a pressure compensation device, e.g. membrane (venting means H05K5/0213)}
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H05K5/069 2 {Other details of the casing, e.g. wall structure, passage for a connector, a cable, a shaft}
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H05K7/00 0 Constructional details common to different types of electric apparatus (casings, cabinets, drawers H05K5/00)
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H05K7/005 1 {arrangements of circuit components without supporting structure}
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H05K7/02 1 Arrangements of circuit components or wiring on supporting structure
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H05K7/023 2 {Stackable modules}
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H05K7/026 2 {Multiple connections subassemblies}
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H05K7/04 2 on conductive chassis
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H05K7/06 2 on insulating boards {, e.g. wiring harnesses (for printed circuits H05K1/18, H05K3/30)}
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H05K7/08 3 on perforated boards
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H05K7/10 2 Plug-in assemblages of components {, e.g. IC sockets}
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H05K7/1007 3 {with means for increasing contact pressure at the end of engagement of coupling parts}
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H05K7/1015 3 {having exterior leads}
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H05K7/1023 4 {co-operating by abutting, e.g. flat pack}
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H05K7/103 4 {co-operating by sliding, e.g. DIP carriers}
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H05K7/1038 5 {with spring contact pieces (H05K7/1046 takes precedence)}
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H05K7/1046 5 {J-shaped leads}
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H05K7/1053 3 {having interior leads}
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H05K7/1061 4 {co-operating by abutting}
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H05K7/1069 5 {with spring contact pieces}
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H05K7/1076 4 {co-operating by sliding}
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H05K7/1084 5 {pin grid array package carriers}
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H05K7/1092 3 {with built-in components, e.g. intelligent sockets}
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H05K7/12 2 Resilient or clamping means for holding component to structure
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H05K7/14 1 Mounting supporting structure in casing or on frame or rack
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H05K7/1401 2 {comprising clamping or extracting means (H05K7/10 takes precedence)}
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H05K7/1402 3 {for securing or extracting printed circuit boards}
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H05K7/1404 4 {by edge clamping, e.g. wedges}
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H05K7/1405 4 {by clips or resilient members, e.g. hooks}
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H05K7/1407 4 {by turn-bolt or screw member}
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H05K7/1408 4 {by a unique member which latches several boards, e.g. locking bars}
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H05K7/1409 4 {by lever-type mechanisms}
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H05K7/1411 3 {for securing or extracting box-type drawers}
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H05K7/1412 4 {hold down mechanisms, e.g. avionic racks}
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H05K7/1414 3 {with power interlock}
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H05K7/1415 3 {manual gripping tools}
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H05K7/1417 2 {having securing means for mounting boards, plates or wiring boards (H05K7/1461 takes precedence)}
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H05K7/1418 3 {Card guides, e.g. grooves (H05K7/1425 takes precedence)}
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H05K7/142 3 {Spacers not being card guides}
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H05K7/1421 2 {Drawers for printed circuit boards}
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H05K7/1422 2 {Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames}
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H05K7/1424 3 {Card cages}
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H05K7/1425 4 {of standardised dimensions, e.g. 19"-subrack}
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H05K7/1427 3 {Housings}
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H05K7/1428 4 {for small modular apparatus with terminal block}
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H05K7/1429 4 {for circuits carrying a CPU and adapted to receive expansion cards}
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H05K7/1431 5 {Retention mechanisms for CPU modules}
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H05K7/1432 4 {specially adapted for power drive units or power converters}
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H05K7/14322 5 {wherein the control and power circuits of a power converter are arranged within the same casing}
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H05K7/14324 5 {comprising modular units, e.g. DIN rail mounted units}
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H05K7/14325 5 {for cabinets or racks}
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H05K7/14327 5 {having supplementary functional units, e.g. data transfer modules or displays or user interfaces}
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H05K7/14329 5 {specially adapted for the configuration of power bus bars}
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H05K7/14337 5 {specially adapted for underwater operation}
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H05K7/14339 5 {specially adapted for high voltage operation}
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H05K7/1434 4 {for electronics exposed to high gravitational force; Cylindrical housings}
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H05K7/1435 3 {Expandable constructions}
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H05K7/1438 2 {Back panels or connecting means therefor; Terminals; Coding means to avoid wrong insertion}
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H05K7/1439 3 {Back panel mother boards}
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H05K7/1441 4 {with a segmented structure}
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H05K7/1442 4 {with a radial structure}
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H05K7/1444 4 {Complex or three-dimensional-arrangements; Stepped or dual mother boards}
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H05K7/1445 4 {with double-sided connections}
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H05K7/1447 3 {External wirings; Wiring ducts; Laying cables}
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H05K7/1448 4 {with connections to the front board}
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H05K7/1449 4 {with connections to the back board}
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H05K7/1451 4 {with connections between circuit boards or units}
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H05K7/1452 3 {Mounting of connectors; Switching; Reinforcing of back panels}
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H05K7/1454 4 {Alignment mechanisms; Drawout cases}
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H05K7/1455 4 {Coding for prevention of wrong insertion}
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H05K7/1457 3 {Power distribution arrangements}
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H05K7/1458 3 {Active back panels; Back panels with filtering means}
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H05K7/1459 3 {Circuit configuration, e.g. routing signals}
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H05K7/1461 2 {Slidable card holders; Card stiffeners; Control or display means therefor}
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H05K7/1462 2 {for programmable logic controllers [PLC] for automation or industrial process control}
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H05K7/1464 3 {Functional units accommodated in the same PLC module housing}
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H05K7/1465 3 {Modular PLC assemblies with separable functional units}
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H05K7/1467 3 {PLC mounted in a cabinet or chassis}
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H05K7/1468 3 {Mechanical features of input/output (I/O) modules}
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H05K7/1469 4 {Terminal blocks for connecting sensors}
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H05K7/1471 4 {Modules for controlling actuators}
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H05K7/1472 4 {Bus coupling modules, e.g. bus distribution modules}
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H05K7/1474 3 {Mounting of modules, e.g. on a base or rail or wall}
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H05K7/1475 3 {Bus assemblies for establishing communication between PLC modules}
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H05K7/1477 4 {including backplanes}
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H05K7/1478 4 {including a segmented bus}
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H05K7/1479 4 {including decentralized modules, e.g. connected to other modules using fieldbus}
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H05K7/1481 3 {User interface, e.g. status displays; Programming interface, e.g. connector for computer programming; Monitoring}
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H05K7/1482 3 {PLC power supply; PLC accessories, e.g. for safety}
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H05K7/1484 3 {Electrical diagrams relating to constructional features, e.g. signal routing within PLC; Provisions for disaster recovery, e.g. redundant systems}
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H05K7/1485 2 {Servers; Data center rooms, e.g. 19-inch computer racks}
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H05K7/1487 3 {Blade assemblies, e.g. blade cases or inner arrangements within a blade}
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H05K7/1488 3 {Cabinets therefor, e.g. chassis or racks or mechanical interfaces between blades and support structures}
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H05K7/1489 4 {characterized by the mounting of blades therein, e.g. brackets, rails, trays (H05K7/1491 takes precedence)}
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H05K7/1491 4 {having cable management arrangements (management of optical cables G02B6/444; in telecommunication cabinets H04Q1/06)}
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H05K7/1492 4 {having electrical distribution arrangements, e.g. power supply or data communications}
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H05K7/1494 4 {having hardware for monitoring blades, e.g. keyboards, displays (methods or software therefore H05K7/1498)}
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H05K7/1495 4 {providing data protection in case of earthquakes, floods, storms, nuclear explosions, intrusions, fire}
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H05K7/1497 3 {Rooms for data centers; Shipping containers therefor}
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H05K7/1498 3 {Resource management, Optimisation arrangements, e.g. configuration, identification, tracking, physical location (thermal management H05K7/20836)}
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H05K7/16 2 on hinges or pivots
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H05K7/18 1 Construction of rack or frame
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H05K7/183 2 {support rails therefor}
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H05K7/186 2 {for supporting telecommunication equipment (selecting apparatus H04Q1/02)}
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H05K7/20 1 Modifications to facilitate cooling, ventilating, or heating
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H05K7/20009 2 {using a gaseous coolant in electronic enclosures (in cabinets of standardized dimensions H05K7/20536; in server cabinets H05K7/20709; in vehicle electronic casings H05K7/20845; in power control electronics H05K7/2089; in displays H05K7/20954)}
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H05K7/20127 3 {Natural convection}
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H05K7/20136 3 {Forced ventilation, e.g. by fans (H05K7/202 takes precedence)}
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H05K7/20145 4 {Means for directing air flow, e.g. ducts, deflectors, plenum or guides}
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H05K7/20154 4 {Heat dissipaters coupled to components}
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H05K7/20163 5 {the components being isolated from air flow, e.g. hollow heat sinks, wind tunnels or funnels}
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H05K7/20172 4 {Fan mounting or fan specifications}
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H05K7/20181 4 {Filters; Louvers}
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H05K7/2019 4 {Fan safe systems, e.g. mechanical devices for non stop cooling}
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H05K7/202 3 {Air circulating in closed loop within enclosure wherein heat is removed through heat-exchangers}
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H05K7/20209 3 {Thermal management, e.g. fan control}
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H05K7/20218 2 {using a liquid coolant without phase change in electronic enclosures (in cabinets of standardized dimensions H05K7/20536; in server cabinets H05K7/20709; in vehicle electronic casings H05K7/20845; in power control electronics H05K7/2089; in displays H05K7/20954)}
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H05K7/20236 3 {by immersion}
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H05K7/20245 3 {by natural convection; Thermosiphons}
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H05K7/20254 3 {Cold plates transferring heat from heat source to coolant}
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H05K7/20263 3 {Heat dissipaters releasing heat from coolant}
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H05K7/20272 3 {Accessories for moving fluid, for expanding fluid, for connecting fluid conduits, for distributing fluid, for removing gas or for preventing leakage, e.g. pumps, tanks or manifolds}
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H05K7/20281 3 {Thermal management, e.g. liquid flow control}
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H05K7/2029 2 {using a liquid coolant with phase change in electronic enclosures (in cabinets of standardized dimensions H05K7/20536; in server cabinets H05K7/20709; in vehicle electronic casings H05K7/20845; in power control electronics H05K7/2089; in displays H05K7/20954)}
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H05K7/203 3 {by immersion}
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H05K7/20309 3 {Evaporators}
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H05K7/20318 3 {Condensers}
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H05K7/20327 3 {Accessories for moving fluid, for connecting fluid conduits, for distributing fluid or for preventing leakage, e.g. pumps, tanks or manifolds}
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H05K7/20336 3 {Heat pipes, e.g. wicks or capillary pumps}
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H05K7/20345 3 {Sprayers; Atomizers}
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H05K7/20354 3 {Refrigerating circuit comprising a compressor}
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H05K7/20363 3 {Refrigerating circuit comprising a sorber}
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H05K7/20372 3 {Cryogenic cooling; Nitrogen liquid cooling}
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H05K7/20381 3 {Thermal management, e.g. evaporation control}
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H05K7/2039 2 {characterised by the heat transfer by conduction from the heat generating element to a dissipating body (arrangements for increasing/decreasing heat-transfer, e.g. fins details, F28F13/00)}
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H05K7/20409 3 {Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing}
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H05K7/20418 4 {the radiating structures being additional and fastened onto the housing}
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H05K7/20427 4 {having radiation enhancing surface treatment, e.g. black coating}
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H05K7/20436 3 {Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing}
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H05K7/20445 4 {the coupling element being an additional piece, e.g. thermal standoff}
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H05K7/20454 5 {with a conformable or flexible structure compensating for irregularities, e.g. cushion bags, thermal paste}
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H05K7/20463 5 {Filling compound, e.g. potted resin}
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H05K7/20472 5 {Sheet interfaces}
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H05K7/20481 6 {characterised by the material composition exhibiting specific thermal properties}
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H05K7/2049 4 {Pressing means used to urge contact, e.g. springs}
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H05K7/205 3 {Heat-dissipating body thermally connected to heat generating element via thermal paths through printed circuit board [PCB] (details of PCBs relating to heat transfer H05K1/0201)}
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H05K7/20509 3 {Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures}
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H05K7/20518 3 {Unevenly distributed heat load, e.g. different sectors at different temperatures, localised cooling, hot spots}
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H05K7/20536 2 {for racks or cabinets of standardised dimensions, e.g. electronic racks for aircraft or telecommunication equipment}
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H05K7/20545 3 {Natural convection of gaseous coolant; Heat transfer by conduction from electronic boards}
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H05K7/20554 3 {Forced ventilation of a gaseous coolant (in closed loop H05K7/206 or H05K7/20609 or H05K7/20618)}
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H05K7/20563 4 {within sub-racks for removing heat from electronic boards}
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H05K7/20572 4 {within cabinets for removing heat from sub-racks, e.g. plenum}
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H05K7/20581 5 {Cabinets including a drawer for fans}
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H05K7/2059 4 {within rooms for removing heat from cabinets, e.g. by air conditioning device}
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H05K7/206 3 {Air circulating in closed loop within cabinets wherein heat is removed through air-to-air heat-exchanger}
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H05K7/20609 3 {Air circulating in closed loop within cabinets wherein heat is removed through air-to-liquid heat-exchanger}
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H05K7/20618 3 {Air circulating in different modes under control of air guidance flaps}
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H05K7/20627 3 {Liquid coolant without phase change}
|
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H05K7/20636 4 {within sub-racks for removing heat from electronic boards}
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H05K7/20645 4 {within cabinets for removing heat from sub-racks}
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H05K7/20654 4 {within rooms for removing heat from cabinets}
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H05K7/20663 3 {Liquid coolant with phase change, e.g. heat pipes}
|
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|
H05K7/20672 4 {within sub-racks for removing heat from electronic boards}
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H05K7/20681 4 {within cabinets for removing heat from sub-racks}
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H05K7/2069 4 {within rooms for removing heat from cabinets}
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H05K7/207 3 {Thermal management, e.g. cabinet temperature control}
|
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|
H05K7/20709 2 {for server racks or cabinets; for data centers, e.g. 19-inch computer racks}
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H05K7/20718 3 {Forced ventilation of a gaseous coolant (in closed loop H05K7/20754)}
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H05K7/20727 4 {within server blades for removing heat from heat source}
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H05K7/20736 4 {within cabinets for removing heat from server blades}
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H05K7/20745 4 {within rooms for removing heat from cabinets, e.g. by air conditioning device}
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H05K7/20754 3 {Air circulating in closed loop within cabinets}
|
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H05K7/20763 3 {Liquid cooling without phase change}
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H05K7/20772 4 {within server blades for removing heat from heat source}
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H05K7/20781 4 {within cabinets for removing heat from server blades}
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H05K7/2079 4 {within rooms for removing heat from cabinets}
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H05K7/208 3 {Liquid cooling with phase change}
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|
H05K7/20809 4 {within server blades for removing heat from heat source}
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|
H05K7/20818 4 {within cabinets for removing heat from server blades}
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|
H05K7/20827 4 {within rooms for removing heat from cabinets, e.g. air conditioning devices}
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H05K7/20836 3 {Thermal management, e.g. server temperature control}
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H05K7/20845 2 {for automotive electronic casings (H05K7/2089 takes precedence)}
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H05K7/20854 3 {Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20863 takes precedence)}
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H05K7/20863 3 {Forced ventilation, e.g. on heat dissipaters coupled to components}
|
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H05K7/20872 3 {Liquid coolant without phase change}
|
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H05K7/20881 3 {Liquid coolant with phase change}
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H05K7/2089 2 {for power electronics, e.g. for inverters for controlling motor}
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H05K7/209 3 {Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20909 takes precedence)}
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H05K7/20909 3 {Forced ventilation, e.g. on heat dissipaters coupled to components}
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H05K7/20918 4 {the components being isolated from air flow, e.g. hollow heat sinks, wind tunnels or funnels}
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H05K7/20927 3 {Liquid coolant without phase change}
|
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H05K7/20936 3 {Liquid coolant with phase change}
|
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H05K7/20945 3 {Thermal management, e.g. inverter temperature control}
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H05K7/20954 2 {for display panels}
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H05K7/20963 3 {Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20972 takes precedence)}
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H05K7/20972 3 {Forced ventilation, e.g. on heat dissipaters coupled to components}
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H05K7/20981 3 {Liquid coolant without phase change}
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H05K7/2099 3 {Liquid coolant with phase change}
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H05K9/00 0 Screening of apparatus or components against electric or magnetic fields (devices for absorbing radiation from an antenna H01Q17/00)
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H05K9/0001 1 {Rooms or chambers (anechoic chambers G01R29/0821)}
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H05K9/0003 2 {Shielded walls, floors, ceilings, e.g. wallpaper, wall panel, electro-conductive plaster, concrete, cement, mortar}
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H05K9/0005 2 {Shielded windows}
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H05K9/0007 1 {Casings (standardised racks H05K9/0062)}
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H05K9/0009 2 {with provisions to reduce EMI leakage through the joining parts}
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H05K9/0015 2 {Gaskets or seals}
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H05K9/0016 3 {having a spring contact}
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H05K9/0018 2 {with provisions to reduce aperture leakages in walls, e.g. terminals, connectors, cables}
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H05K9/002 2 {with localised screening}
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H05K9/0022 3 {of components mounted on printed circuit boards [PCB] (shields integrated within component packages H01L23/552; shields integrated within PCB H05K1/0218)}
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H05K9/0024 4 {Shield cases mounted on a PCB, e.g. cans or caps or conformal shields}
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H05K9/0026 5 {integrally formed from metal sheet}
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H05K9/0028 6 {with retainers or specific soldering features}
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H05K9/0029 5 {made from non-conductive materials intermixed with electro-conductive particles (H05K9/0031 takes precedence)}
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H05K9/003 5 {made from non-conductive materials comprising an electro-conductive coating (H05K9/0031 takes precedence)}
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H05K9/0031 5 {combining different shielding materials}
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H05K9/0032 5 {having multiple parts, e.g. frames mating with lids}
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H05K9/0033 6 {disposed on both PCB faces}
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H05K9/0035 6 {with retainers mounted beforehand on the PCB, e.g. clips}
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H05K9/0037 4 {Housings with compartments containing a PCB, e.g. partitioning walls}
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H05K9/0039 3 {Galvanic coupling of ground layer on printed circuit board [PCB] to conductive casing (printed shielding conductors, ground planes or power planes for reduction of cross-talk or noise in printed circuits H05K1/0218)}
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|
H05K9/0041 2 {Ventilation panels having provisions for screening}
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H05K9/0043 2 {being flexible containers, e.g. pouch, pocket, bag}
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H05K9/0045 2 {being rigid plastic containers having a coating of shielding material}
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H05K9/0047 2 {being rigid plastic containers having conductive particles, fibres or mesh embedded therein}
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H05K9/0049 2 {being metallic containers}
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H05K9/005 2 {being nesting containers}
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H05K9/0052 2 {Shielding other than Faraday cages}
|
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H05K9/0054 2 {specially adapted for display applications}
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H05K9/0056 2 {specially adapted for microwave applications}
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H05K9/0058 2 {specially adapted for optoelectronic applications}
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H05K9/006 2 {specially adapted for signal processing applications, e.g. CATV, tuner, antennas amplifier}
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H05K9/0062 1 {Structures of standardised dimensions, e.g. 19" rack, chassis for servers or telecommunications}
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H05K9/0064 1 {Earth or grounding circuit}
|
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H05K9/0066 1 {Constructional details of transient suppressor}
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|
H05K9/0067 1 {Devices for protecting against damage from electrostatic discharge}
|
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|
H05K9/0069 1 {Methods for measuring the shielding efficiency; Apparatus therefor; Isolation container for testing}
|
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H05K9/0071 1 {Active shielding}
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H05K9/0073 1 {Shielding materials (H05K9/0003 takes precedence)}
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H05K9/0075 2 {Magnetic shielding materials}
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H05K9/0077 3 {comprising superconductors}
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H05K9/0079 2 {Electrostatic discharge protection, e.g. ESD treated surface for rapid dissipation of charges}
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H05K9/0081 2 {Electromagnetic shielding materials, e.g. EMI, RFI shielding (H05K9/0003 takes precedence)}
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H05K9/0083 3 {comprising electro-conductive non-fibrous particles embedded in an electrically insulating supporting structure, e.g. powder, flakes, whiskers (H05K9/0086 takes precedence)}
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H05K9/0084 3 {comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition}
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H05K9/0086 3 {comprising a single discontinuous metallic layer on an electrically insulating supporting structure, e.g. metal grid, perforated metal foil, film, aggregated flakes, sintering}
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H05K9/0088 3 {comprising a plurality of shielding layers; combining different shielding material structure}
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|
H05K9/009 3 {comprising electro-conductive fibres, e.g. metal fibres, carbon fibres, metallised textile fibres, electro-conductive mesh, woven, non-woven mat, fleece, cross-linked}
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H05K9/0092 3 {comprising electro-conductive pigments, e.g. paint, ink, tampon printing}
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H05K9/0094 2 {being light-transmitting, e.g. transparent, translucent}
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H05K9/0096 3 {for television displays, e.g. plasma display panel}
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H05K9/0098 2 {for shielding electrical cables}
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H05K10/00 0 Arrangements for improving the operating reliability of electronic equipment, e.g. by providing a similar standby unit
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H05K11/00 0 Combinations of a radio or television receiver with apparatus having a different main function {(combined with clocks G04B47/00; controlled by a clock G04C21/28)}
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H05K11/02 1 with vehicles
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H05K13/00 0 Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
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H05K13/0007 1 {using handtools (for mounting on a circuit board H05K13/0447)}
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H05K13/0015 1 {Orientation; Alignment; Positioning}
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H05K13/003 1 {Placing of components on belts holding the terminals}
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H05K13/0038 2 {placing the components in a predetermined order}
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H05K13/0053 1 {Arrangements for assisting the manual mounting of components, e.g. special tables or light spots indicating the place for mounting}
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H05K13/0061 1 {Tools for holding the circuit boards during processing; handling transport of printed circuit boards}
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H05K13/0069 2 {Holders for printed circuit boards}
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H05K13/0076 2 {Straightening or aligning terminal leads of pins mounted on boards, during transport of the boards}
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H05K13/0084 1 {Containers and magazines for components, e.g. tube-like magazines}
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H05K13/0092 1 {Treatment of the terminal leads as a separate operation (during transport H05K13/0076, H05K13/023; during mounting H05K13/04)}
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H05K13/02 1 Feeding of components
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H05K13/021 2 {Loading or unloading of containers (H05K13/028 takes precedence)}
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H05K13/0215 2 {Interconnecting of containers, e.g. splicing of tapes}
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H05K13/022 2 {with orientation of the elements}
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H05K13/023 2 {with bending or straightening of the terminal leads}
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H05K13/024 3 {Straightening or aligning terminal leads}
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H05K13/025 4 {of components having oppositely extending terminal leads}
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H05K13/026 4 {of components having terminal leads in side by side relationship, e.g. using combing elements}
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H05K13/027 2 {Fluid transport of components}
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H05K13/028 2 {Simultaneously loading a plurality of loose objects, e.g. by means of vibrations, pressure differences, magnetic fields}
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H05K13/029 2 {Feeding axial lead components, e.g. using vibrating bowls, magnetic fields (H05K13/022 takes precedence)}
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H05K13/04 1 Mounting of components {, e.g. of leadless components}
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H05K13/0404 2 {Pick-and-place heads or apparatus, e.g. with jaws}
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H05K13/0406 3 {Drive mechanisms for pick-and-place heads, e.g. details relating to power transmission, motors or vibration damping}
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H05K13/0408 3 {Incorporating a pick-up tool}
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H05K13/0409 4 {Sucking devices}
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H05K13/041 4 {having multiple pick-up tools}
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H05K13/0411 3 {having multiple mounting heads}
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H05K13/0413 3 {with orientation of the component while holding it; Drive mechanisms for gripping tools, e.g. lifting, lowering or turning of gripping tools}
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H05K13/0417 2 {Feeding with belts or tapes}
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H05K13/0419 3 {tape feeders}
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H05K13/0421 3 {with treatment of the terminal leads}
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H05K13/0426 3 {for components being oppositely extending terminal leads (H05K13/0421 takes precedence)}
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H05K13/043 2 {Feeding one by one by other means than belts}
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H05K13/0434 3 {with containers}
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H05K13/0439 3 {incorporating means for treating the terminal leads only before insertion}
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H05K13/0443 3 {incorporating means for treating the terminal leads before and after insertion or only after insertion}
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H05K13/0447 2 {Hand tools therefor}
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H05K13/0452 2 {Mounting machines or lines comprising a plurality of tools for guiding different components to the same mounting place (H05K13/0406, H05K13/041 take precedence)}
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H05K13/0456 2 {simultaneously punching the circuit board}
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H05K13/046 2 {Surface mounting (surface mounted components H05K3/341)}
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H05K13/0465 3 {by soldering (H05K13/0469 takes precedence)}
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H05K13/0469 3 {by applying a glue or viscous material}
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H05K13/0473 2 {Cutting and clinching the terminal ends of the leads after they are fitted on a circuit board}
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H05K13/0478 2 {Simultaneously mounting of different components}
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H05K13/0482 3 {using templates; using magazines, the configuration of which corresponds to the sites on the boards where the components have to be attached}
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H05K13/0486 2 {Replacement and removal of components}
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H05K13/0491 3 {Hand tools therefor}
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H05K13/0495 2 {having a plurality of work-stations}
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H05K13/06 1 Wiring by machine
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H05K13/065 2 {Accessories therefor, e.g. light spots}
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H05K13/08 1 Monitoring manufacture of assemblages
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H05K13/081 2 {Integration of optical monitoring devices in assembly lines; Processes using optical monitoring devices specially adapted for controlling devices or machines in assembly lines}
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H05K13/0812 3 {the monitoring devices being integrated in the mounting machine, e.g. for monitoring components, leads, component placement}
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H05K13/0813 3 {Controlling of single components prior to mounting, e.g. orientation, component geometry (H05K13/0812 takes precedence)}
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H05K13/0815 3 {Controlling of component placement on the substrate during or after manufacturing}
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H05K13/0817 3 {Monitoring of soldering processes (inspection of solder joints or of printed solder paste G01N21/95684)}
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H05K13/0818 3 {Setup of monitoring devices prior to starting mounting operations; Teaching of monitoring devices for specific products; Compensation of drifts during operation, e.g. due to temperature shifts}
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H05K13/082 2 {Integration of non-optical monitoring devices, i.e. using non-optical inspection means, e.g. electrical means, mechanical means or X-rays}
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H05K13/083 2 {Quality monitoring using results from monitoring devices, e.g. feedback loops (H05K13/084 takes precedence)}
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H05K13/084 2 {Product tracking, e.g. of substrates during the manufacturing process; Component traceability}
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H05K13/085 2 {Production planning, e.g. of allocation of products to machines, of mounting sequences at machine or facility level}
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H05K13/0853 3 {Determination of transport trajectories inside mounting machines}
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H05K13/0857 3 {Product-specific machine setup; Changeover of machines or assembly lines to new product type}
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H05K13/086 2 {Supply management, e.g. supply of components or of substrates}
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H05K13/087 2 {Equipment tracking or labelling, e.g. tracking of nozzles, feeders or mounting heads}
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H05K13/0882 2 {Control systems for mounting machines or assembly lines, e.g. centralized control, remote links, programming of apparatus and processes as such (H05K13/083 takes precedence)}
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H05K13/0885 2 {Power supply}
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H05K13/0888 2 {Ergonomics; Operator safety; Training; Failsafe systems}
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H05K13/089 2 {Calibration, teaching or correction of mechanical systems, e.g. of the mounting head}
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H05K13/0895 2 {Maintenance systems or processes, e.g. indicating need for maintenance}
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H05K2201/00 0 Indexing scheme relating to printed circuits covered by H05K1/00
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H05K2201/01 1 Dielectrics
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H05K2201/0104 2 Properties and characteristics in general
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H05K2201/0108 3 Transparent
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H05K2201/0112 3 Absorbing light, e.g. dielectric layer with carbon filler for laser processing
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H05K2201/0116 3 Porous, e.g. foam
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H05K2201/012 3 Flame-retardant; Preventing of inflammation
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H05K2201/0125 3 Shrinkable, e.g. heat-shrinkable polymer
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H05K2201/0129 3 Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
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H05K2201/0133 3 Elastomeric or compliant polymer (elastomeric conductor H05K2201/0314)
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H05K2201/0137 2 Materials
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H05K2201/0141 3 Liquid crystal polymer [LCP]
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H05K2201/0145 3 Polyester, e.g. polyethylene terephthalate [PET], polyethylene naphthalate [PEN]
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H05K2201/015 3 Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
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H05K2201/0154 3 Polyimide
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H05K2201/0158 3 Polyalkene or polyolefin, e.g. polyethylene [PE], polypropylene [PP]
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H05K2201/0162 3 Silicon containing polymer, e.g. silicone
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H05K2201/0166 3 Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
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H05K2201/017 3 Glass ceramic coating, e.g. formed on inorganic substrate (inorganic, non-metallic substrates H05K1/0306)
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H05K2201/0175 3 Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
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H05K2201/0179 3 Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
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H05K2201/0183 2 Dielectric layers
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H05K2201/0187 3 with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
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H05K2201/0191 3 wherein the thickness of the dielectric plays an important role
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H05K2201/0195 3 Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
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H05K2201/02 1 Fillers; Particles; Fibers; Reinforcement materials
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H05K2201/0203 2 Fillers and particles
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H05K2201/0206 3 Materials
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H05K2201/0209 4 Inorganic, non-metallic particles
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H05K2201/0212 4 Resin particles
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H05K2201/0215 4 Metallic fillers
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H05K2201/0218 4 Composite particles, i.e. first metal coated with second metal
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H05K2201/0221 4 Insulating particles having an electrically conductive coating
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H05K2201/0224 4 Conductive particles having an insulating coating
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H05K2201/0227 4 Insulating particles having an insulating coating
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H05K2201/023 4 Hard particles, i.e. particles in conductive adhesive at least partly penetrating an electrode
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H05K2201/0233 4 Deformable particles (insulating particles having an electrically conductive coating H05K2201/0221)
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H05K2201/0236 4 Plating catalyst as filler in insulating material (catalytic ink H05K2203/0709)
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H05K2201/0239 4 Coupling agent for particles (using a coupling agent to improve the adhesion between an insulating substrate and a metal H05K3/389)
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H05K2201/0242 3 Shape of an individual particle
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H05K2201/0245 4 Flakes, flat particles or lamellar particles
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H05K2201/0248 4 Needles or elongated particles; Elongated cluster of chemically bonded particles (microfibers H05K2201/0251; stacked conductors H05K2201/0379)
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H05K2201/0251 4 Non-conductive microfibers (relatively short elongated particles H05K2201/0248)
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H05K2201/0254 4 Microballoons or hollow filler particles
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H05K2201/0257 4 Nanoparticles (inks comprising nanoparticles H05K1/097)
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H05K2201/026 4 Nanotubes or nanowires
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H05K2201/0263 3 Details about a collection of particles
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H05K2201/0266 4 Size distribution
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H05K2201/0269 4 Non-uniform distribution or concentration of particles
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H05K2201/0272 4 Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
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H05K2201/0275 2 Fibers and reinforcement materials
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H05K2201/0278 3 Polymeric fibers
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H05K2201/0281 3 Conductive fibers
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H05K2201/0284 3 Paper, e.g. as reinforcement (paper sheet substrates H05K1/0386)
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H05K2201/0287 3 Unidirectional or parallel fibers
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H05K2201/029 3 Woven fibrous reinforcement or textile (textile substrates H05K1/038)
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H05K2201/0293 3 Non-woven fibrous reinforcement
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H05K2201/0296 3 Fibers with a special cross-section, e.g. elliptical
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H05K2201/03 1 Conductive materials
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H05K2201/0302 2 Properties and characteristics in general
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H05K2201/0305 3 Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
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H05K2201/0308 3 Shape memory alloy [SMA]
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H05K2201/0311 3 Metallic part with specific elastic properties, e.g. bent piece of metal as electrical contact
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H05K2201/0314 3 Elastomeric connector or conductor, e.g. rubber with metallic filler (elastomeric dielectric H05K2201/0133)
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H05K2201/0317 3 Thin film conductor layer; Thin film passive component
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H05K2201/032 2 Materials
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H05K2201/0323 3 Carbon
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H05K2201/0326 3 Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
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H05K2201/0329 3 Intrinsically conductive polymer [ICP]; Semiconductive polymer
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H05K2201/0332 2 Structure of the conductor
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H05K2201/0335 3 Layered conductors or foils
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H05K2201/0338 4 Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer (etched tri-metal structure H05K2201/0361)
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H05K2201/0341 4 Intermediate metal, e.g. before reinforcing of conductors by plating
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H05K2201/0344 4 Electroless sublayer, e.g. Ni, Co, Cd or Ag; Transferred electroless sublayer
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H05K2201/0347 4 Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias (reinforcing the conductive pattern H05K3/24)
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H05K2201/035 4 Paste overlayer, i.e. conductive paste or solder paste over conductive layer
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H05K2201/0352 4 Differences between the conductors of different layers of a multilayer
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H05K2201/0355 4 Metal foils
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H05K2201/0358 4 Resin coated copper [RCC]
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H05K2201/0361 4 Etched tri-metal structure, i.e. metal layers or metal patterns on both sides of a different central metal layer which is later at least partly etched
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H05K2201/0364 3 Conductor shape
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H05K2201/0367 4 Metallic bump or raised conductor not used as solder bump (solder materials or compositions and methods of application thereof H05K3/3457)
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H05K2201/037 4 Hollow conductors, i.e. conductors partially or completely surrounding a void, e.g. hollow waveguides
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H05K2201/0373 4 Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool (providing micro- or nanometer scale roughness on a metal surface H05K2203/0307)
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H05K2201/0376 4 Flush conductors, i.e. flush with the surface of the printed circuit
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H05K2201/0379 4 Stacked conductors
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H05K2201/0382 4 Continuously deformed conductors
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H05K2201/0385 4 Displaced conductors
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H05K2201/0388 3 Other aspects of conductors
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H05K2201/0391 4 Using different types of conductors
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H05K2201/0394 4 Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
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H05K2201/0397 4 Tab (forming integral conductive tabs H05K3/4092)
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H05K2201/04 1 Assemblies of printed circuits
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H05K2201/041 2 Stacked PCBs, i.e. having neither an empty space nor mounted components in between
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H05K2201/042 2 Stacked spaced PCBs; Planar parts of folded flexible circuits having mounted components in between or spaced from each other
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H05K2201/043 2 Stacked PCBs with their backs attached to each other without electrical connection
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H05K2201/044 2 Details of backplane or midplane for mounting orthogonal PCBs
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H05K2201/045 2 Hierarchy auxiliary PCB, i.e. more than two levels of hierarchy for daughter PCBs are important
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H05K2201/046 2 Planar parts of folded PCBs making an angle relative to each other (assembling printed circuits perpendicularly to each other H05K3/366)
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H05K2201/047 2 Box-like arrangements of PCBs
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H05K2201/048 2 Second PCB mounted on first PCB by inserting in window or holes of the first PCB
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H05K2201/049 2 PCB for one component, e.g. for mounting onto mother PCB
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H05K2201/05 1 Flexible printed circuits [FPCs]
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H05K2201/051 2 Rolled
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H05K2201/052 2 Branched
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H05K2201/053 2 Tails
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H05K2201/055 2 Folded back on itself
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H05K2201/056 2 Folded around rigid support or component
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H05K2201/057 2 Shape retainable
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H05K2201/058 2 Direct connection between two or more FPCs or between flexible parts of rigid PCBs
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H05K2201/06 1 Thermal details
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H05K2201/062 2 Means for thermal insulation, e.g. for protection of parts
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H05K2201/064 2 Fluid cooling, e.g. by integral pipes
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H05K2201/066 2 Heatsink mounted on the surface of the PCB (heatsink inserted in the PCB H05K2201/10416)
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H05K2201/068 2 wherein the coefficient of thermal expansion is important
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H05K2201/07 1 Electric details
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H05K2201/0707 2 Shielding
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H05K2201/0715 3 provided by an outer layer of PCB
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H05K2201/0723 3 provided by an inner layer of PCB
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H05K2201/073 2 High voltage adaptations (overvoltage protection H05K1/0257)
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H05K2201/0738 3 Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials
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H05K2201/0746 3 Protection against transients, e.g. layout adapted for plugging of connector
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H05K2201/0753 2 Insulation
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H05K2201/0761 3 Insulation resistance, e.g. of the surface of the PCB between the conductors
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H05K2201/0769 3 Anti metal-migration, e.g. avoiding tin whisker growth
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H05K2201/0776 2 Resistance and impedance
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H05K2201/0784 3 Uniform resistance, i.e. equalizing the resistance of a number of conductors
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H05K2201/0792 3 Means against parasitic impedance; Means against eddy currents
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H05K2201/08 1 Magnetic details
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H05K2201/083 2 Magnetic materials
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H05K2201/086 3 for inductive purposes, e.g. printed inductor with ferrite core
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H05K2201/09 1 Shape and layout
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H05K2201/09009 2 Substrate related
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H05K2201/09018 3 Rigid curved substrate
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H05K2201/09027 3 Non-rectangular flat PCB, e.g. circular
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H05K2201/09036 3 Recesses or grooves in insulating substrate (recess in metallic substrate H05K2201/09745)
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H05K2201/09045 3 Locally raised area or protrusion of insulating substrate (rigid curved substrate H05K2201/09018)
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H05K2201/09054 3 Raised area or protrusion of metal substrate
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H05K2201/09063 3 Holes or slots in insulating substrate not used for electrical connections
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H05K2201/09072 3 Hole or recess under component or special relationship between hole and component
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H05K2201/09081 3 Tongue or tail integrated in planar structure, e.g. obtained by cutting from the planar structure
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H05K2201/0909 3 Preformed cutting or breaking line
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H05K2201/091 3 Locally and permanently deformed areas including dielectric material
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H05K2201/09109 3 Locally detached layers, e.g. in multilayer
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H05K2201/09118 3 Moulded substrate
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H05K2201/09127 3 PCB or component having an integral separable or breakable part
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H05K2201/09136 3 Means for correcting warpage
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H05K2201/09145 2 Edge details
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H05K2201/09154 3 Bevelled, chamferred or tapered edge
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H05K2201/09163 3 Slotted edge
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H05K2201/09172 3 Notches between edge pads
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H05K2201/09181 3 Notches in edge pads
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H05K2201/0919 3 Exposing inner circuit layers or metal planes at the side edge of the PCB or at the walls of large holes (shielding provided by an inner layer of PCB H05K2201/0723)
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H05K2201/092 3 Exposing inner circuit layers or metal planes at the walls of high aspect ratio holes (forming plated-through holes H05K3/42; cutting around hole H05K2203/0242)
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H05K2201/09209 2 Shape and layout details of conductors
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H05K2201/09218 3 Conductive traces
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H05K2201/09227 4 Layout details of a plurality of traces, e.g. escape layout for Ball Grid Array [BGA] mounting
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H05K2201/09236 4 Parallel layout (layout of balanced signal pairs H05K1/0245; superposed layout H05K2201/09672)
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H05K2201/09245 4 Crossing layout (alternating conductors H05K2201/097)
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H05K2201/09254 4 Branched layout
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H05K2201/09263 4 Meander
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H05K2201/09272 4 Layout details of angles or corners
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H05K2201/09281 4 Layout details of a single conductor (meander H05K2201/09263; layout details of angles or corners H05K2201/09272)
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H05K2201/0929 3 Conductive planes
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H05K2201/093 4 Layout of power planes, ground planes or power supply conductors, e.g. having special clearance holes therein (reduction of cross-talk, noise or interference by patterned shielding planes, ground planes or power planes H05K1/0224)
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H05K2201/09309 4 Core having two or more power planes; Capacitive laminate of two power planes
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H05K2201/09318 4 Core having one signal plane and one power plane
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H05K2201/09327 4 Special sequence of power, ground and signal layers in multilayer PCB
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H05K2201/09336 4 Signal conductors in same plane as power plane
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H05K2201/09345 4 Power and ground in the same plane; Power planes for two voltages in one plane
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H05K2201/09354 4 Ground conductor along edge of main surface (edge contacts H05K3/403)
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H05K2201/09363 4 wherein only contours around conductors are removed for insulation
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H05K2201/09372 3 Pads and lands
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H05K2201/09381 4 Shape of non-curved single flat metallic pad, land or exposed part thereof; Shape of electrode of leadless component (notches in edge pads H05K2201/09181)
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H05K2201/0939 4 Curved pads, e.g. semi-circular or elliptical pads or lands
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H05K2201/094 4 Array of pads or lands differing from one another, e.g. in size, pitch, thickness; Using different connections on the pads (using different types of conductors H05K2201/0391)
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H05K2201/09409 4 Multiple rows of pads, lands, terminals or dummy patterns; Multiple rows of mounted components
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H05K2201/09418 4 Special orientation of pads, lands or terminals of component, e.g. radial or polygonal orientation
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H05K2201/09427 4 Special relation between the location or dimension of a pad or land and the location or dimension of a terminal
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H05K2201/09436 4 Pads or lands on permanent coating which covers the other conductors
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H05K2201/09445 4 Pads for connections not located at the edge of the PCB, e.g. for flexible circuits
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H05K2201/09454 4 Inner lands, i.e. lands around via or plated through-hole in internal layer of multilayer PCB
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H05K2201/09463 4 Partial lands, i.e. lands or conductive rings not completely surrounding the hole (landless plated-through hole or via H05K2201/09545)
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H05K2201/09472 4 Recessed pad for surface mounting (recess in pad H05K2201/09745); Recessed electrode of component
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H05K2201/09481 4 Via in pad; Pad over filled via (if used for surface mounting H05K1/113)
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H05K2201/0949 4 Pad close to a hole, not surrounding the hole (if used for surface mounting H05K1/114)
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H05K2201/095 3 Conductive through-holes or vias
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H05K2201/09509 4 Blind vias, i.e. vias having one side closed
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H05K2201/09518 5 Deep blind vias, i.e. blind vias connecting the surface circuit to circuit layers deeper than the first buried circuit layer
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H05K2201/09527 5 Inverse blind vias, i.e. bottoms outwards in multilayer PCB; Blind vias in centre of PCB having opposed bottoms
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H05K2201/09536 4 Buried plated through-holes, i.e. plated through-holes formed in a core before lamination
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H05K2201/09545 4 Plated through-holes or blind vias without lands
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H05K2201/09554 4 Via connected to metal substrate
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H05K2201/09563 4 Metal filled via (plated through-hole filled with insulating material H05K2201/0959)
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H05K2201/09572 4 Solder filled plated through-hole in the final product (soldering lead-in-hole components H05K3/3447)
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H05K2201/09581 4 Applying an insulating coating on the walls of holes
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H05K2201/0959 4 Plated through-holes or plated blind vias filled with insulating material
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H05K2201/096 4 Vertically aligned vias, holes or stacked vias
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H05K2201/09609 4 Via grid, i.e. two-dimensional array of vias or holes in a single plane (interposers H05K2201/10378)
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H05K2201/09618 4 Via fence, i.e. one-dimensional array of vias
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H05K2201/09627 4 Special connections between adjacent vias, not for grounding vias (redundant conductors or connections H05K2201/0979)
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H05K2201/09636 4 Details of adjacent, not connected vias
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H05K2201/09645 4 Patterning on via walls; Plural lands around one hole
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H05K2201/09654 3 covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
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H05K2201/09663 4 Divided layout, i.e. conductors divided in two or more parts (branched layout H05K2201/09254)
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H05K2201/09672 4 Superposed layout, i.e. in different planes (parallel traces in one plane H05K2201/09236)
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H05K2201/09681 4 Mesh conductors, e.g. as a ground plane
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H05K2201/0969 4 Apertured conductors
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H05K2201/097 4 Alternating conductors, e.g. alternating different shaped pads, twisted pairs; Alternating components
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H05K2201/09709 4 Staggered pads, lands or terminals; Parallel conductors in different planes
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H05K2201/09718 4 Clearance holes
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H05K2201/09727 4 Varying width along a single conductor; Conductors or pads having different widths
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H05K2201/09736 4 Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
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H05K2201/09745 4 Recess in conductor, e.g. in pad or in metallic substrate
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H05K2201/09754 4 Connector integrally incorporated in the PCB or in housing (mounted connecter H05K2201/10189)
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H05K2201/09763 4 Printed component having superposed conductors, but integrated in one circuit layer
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H05K2201/09772 4 Conductors directly under a component but not electrically connected to the component (cooling of mounted components by printed thermal vias H05K1/0206)
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H05K2201/09781 4 Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
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H05K2201/0979 4 Redundant conductors or connections, i.e. more than one current path between two points
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H05K2201/098 4 Special shape of the cross-section of conductors, e.g. very thick plated conductors
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H05K2201/09809 4 Coaxial layout (reduction of cross-talk, noise or interference by printed shielding conductors for shielding around a single via or around a group of vias H05K1/0222)
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H05K2201/09818 2 Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
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H05K2201/09827 3 Tapered, e.g. tapered hole, via or groove (bevelled, chamferred or tapered edge H05K2201/09154)
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H05K2201/09836 3 Oblique hole, via or bump
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H05K2201/09845 3 Stepped hole, via, edge, bump or conductor
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H05K2201/09854 3 Hole or via having special cross-section, e.g. elliptical
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H05K2201/09863 3 Concave hole or via
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H05K2201/09872 3 Insulating conformal coating (foil encapsulation H05K2203/1311)
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H05K2201/09881 3 Coating only between conductors, i.e. flush with the conductors
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H05K2201/0989 3 Coating free areas, e.g. areas other than pads or lands free of solder resist
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H05K2201/099 3 Coating over pads, e.g. solder resist partly over pads
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H05K2201/09909 3 Special local insulating pattern, e.g. as dam around component
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H05K2201/09918 3 Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
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H05K2201/09927 3 Machine readable code, e.g. bar code
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H05K2201/09936 3 Marks, inscriptions, etc. for information
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H05K2201/09945 3 Universal aspects, e.g. universal inner layers or via grid, or anisotropic interposer
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H05K2201/09954 3 More mounting possibilities, e.g. on same place of PCB, or by using different sets of edge pads
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H05K2201/09963 3 Programming circuit by using small elements, e.g. small PCBs
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H05K2201/09972 3 Partitioned, e.g. portions of a PCB dedicated to different functions; Boundary lines therefore; Portions of a PCB being processed separately or differently
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H05K2201/09981 3 Metallised walls
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H05K2201/09985 3 Hollow waveguide combined with printed circuit
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H05K2201/0999 3 Circuit printed on or in housing, e.g. housing as PCB; Circuit printed on the case of a component; PCB affixed to housing
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H05K2201/10 1 Details of components or other objects attached to or integrated in a printed circuit board
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H05K2201/10007 2 Types of components
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H05K2201/10015 3 Non-printed capacitor
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H05K2201/10022 3 Non-printed resistor
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H05K2201/1003 3 Non-printed inductor
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H05K2201/10037 3 Printed or non-printed battery
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H05K2201/10045 3 Mounted network component having plural terminals
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H05K2201/10053 3 Switch
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H05K2201/1006 3 Non-printed filter
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H05K2201/10068 3 Non-printed resonator
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H05K2201/10075 3 Non-printed oscillator
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H05K2201/10083 3 Electromechanical or electro-acoustic component, e.g. microphone
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H05K2201/1009 3 Electromotor
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H05K2201/10098 3 Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas
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H05K2201/10106 3 Light emitting diode [LED]
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H05K2201/10113 3 Lamp
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H05K2201/10121 3 Optical component, e.g. opto-electronic component
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H05K2201/10128 3 Display
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H05K2201/10136 4 Liquid Crystal display [LCD]
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H05K2201/10143 3 Solar cell
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H05K2201/10151 3 Sensor
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H05K2201/10159 3 Memory
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H05K2201/10166 3 Transistor
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H05K2201/10174 3 Diode
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H05K2201/10181 3 Fuse
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H05K2201/10189 3 Non-printed connector
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H05K2201/10196 3 Variable component, e.g. variable resistor
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H05K2201/10204 3 Dummy component, dummy PCB or template, e.g. for monitoring, controlling of processes, comparing, scanning
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H05K2201/10212 3 Programmable component
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H05K2201/10219 3 Thermoelectric component
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H05K2201/10227 2 Other objects, e.g. metallic pieces
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H05K2201/10234 3 Metallic balls (solder balls H05K2203/041)
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H05K2201/10242 3 Metallic cylinders (small solder preforms other than balls H05K2203/0415)
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H05K2201/1025 3 Metallic discs (small solder preforms other than balls H05K2203/0415)
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H05K2201/10257 3 Hollow pieces of metal, e.g. used in connection between component and PCB
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H05K2201/10265 3 Metallic coils or springs, e.g. as part of a connection element
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H05K2201/10272 3 Busbars, i.e. thick metal bars mounted on the PCB as high-current conductors (metal strips H05K2201/1028)
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H05K2201/1028 3 Thin metal strips as connectors or conductors
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H05K2201/10287 3 Metal wires as connectors or conductors
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H05K2201/10295 3 Metallic connector elements partly mounted in a hole of the PCB
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H05K2201/10303 4 Pin-in-hole mounted pins
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H05K2201/1031 3 Surface mounted metallic connector elements
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H05K2201/10318 4 Surface mounted metallic pins
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H05K2201/10325 3 Sockets, i.e. female type connectors comprising metallic connector elements integrated in, or bonded to a common dielectric support
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H05K2201/10333 3 Individual female type metallic connector elements
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H05K2201/1034 3 Edge terminals, i.e. separate pieces of metal attached to the edge of the PCB (tab H05K2201/0397)
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H05K2201/10348 3 Fuzz's as connector elements, i.e. small pieces of metallic fiber to make connection
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H05K2201/10356 3 Cables
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H05K2201/10363 3 Jumpers, i.e. non-printed cross-over connections
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H05K2201/10371 3 Shields or metal cases
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H05K2201/10378 3 Interposers
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H05K2201/10386 3 Clip leads; Terminals gripping the edge of a substrate
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H05K2201/10393 3 Clamping a component by an element or a set of elements
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H05K2201/10401 3 Eyelets, i.e. rings inserted into a hole through a circuit board
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H05K2201/10409 3 Screws
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H05K2201/10416 3 Metallic blocks or heatsinks completely inserted in a PCB (metallic supports H05K3/0061)
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H05K2201/10424 3 Frame holders
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H05K2201/10431 2 Details of mounted components (printed components H05K1/16)
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H05K2201/10439 3 Position of a single component
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H05K2201/10446 4 Mounted on an edge (soldering edge mounted components H05K3/3405; edge terminals H05K2201/1034)
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H05K2201/10454 4 Vertically mounted
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H05K2201/10462 4 Flat component oriented parallel to the PCB surface
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H05K2201/10469 4 Asymmetrically mounted component
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H05K2201/10477 4 Inverted
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H05K2201/10484 4 Obliquely mounted
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H05K2201/10492 4 Electrically connected to another device (mounted components directly electrically connected to each other H05K2201/1053)
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H05K2201/105 4 Mechanically attached to another device (attached components H05K2201/10537)
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H05K2201/10507 3 Involving several components
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H05K2201/10515 4 Stacked components
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H05K2201/10522 4 Adjacent components
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H05K2201/1053 4 Mounted components directly electrically connected to each other, i.e. not via the PCB
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H05K2201/10537 4 Attached components
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H05K2201/10545 4 Related components mounted on both sides of the PCB
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H05K2201/10553 3 Component over metal, i.e. metal plate in between bottom of component and surface of PCB
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H05K2201/1056 3 Metal over component, i.e. metal plate over component mounted on or embedded in PCB
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H05K2201/10568 3 Integral adaptations of a component or an auxiliary PCB for mounting, e.g. integral spacer element
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H05K2201/10575 3 Insulating foil under component (permanent spacer or stand-off H05K2201/2036)
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H05K2201/10583 3 Cylindrically shaped component; Fixing means therefore
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H05K2201/1059 3 Connections made by press-fit insertion
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H05K2201/10598 3 Means for fastening a component, a casing or a heat sink whereby a pressure is exerted on the component towards the PCB
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H05K2201/10606 3 Permanent holder for component or auxiliary PCB mounted on a PCB (clamping a component by an element or a set of elements H05K2201/10393)
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H05K2201/10613 2 Details of electrical connections of non-printed components, e.g. special leads
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H05K2201/10621 3 Components characterised by their electrical contacts
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H05K2201/10628 4 Leaded surface mounted device (soldering surface mounted leaded components H05K3/3421)
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H05K2201/10636 4 Leadless chip, e.g. chip capacitor or resistor
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H05K2201/10643 4 Disc shaped leadless component
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H05K2201/10651 4 Component having two leads, e.g. resistor, capacitor
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H05K2201/10659 4 Different types of terminals for the same component, e.g. solder balls combined with leads
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H05K2201/10666 4 Plated through-hole for surface mounting on PCB
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H05K2201/10674 4 Flip chip
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H05K2201/10681 4 Tape Carrier Package [TCP]; Flexible sheet connector
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H05K2201/10689 4 Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
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H05K2201/10696 4 Single-in-line [SIL] package
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H05K2201/10704 4 Pin grid array [PGA]
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H05K2201/10712 4 Via grid array, e.g. via grid array capacitor
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H05K2201/10719 4 Land grid array [LGA]
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H05K2201/10727 4 Leadless chip carrier [LCC], e.g. chip-modules for cards
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H05K2201/10734 4 Ball grid array [BGA]; Bump grid array
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H05K2201/10742 3 Details of leads
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H05K2201/1075 4 Shape details
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H05K2201/10757 5 Bent leads
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H05K2201/10765 6 Leads folded back, i.e. bent with an angle of 180 deg
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H05K2201/10772 6 Leads of a surface mounted component bent for providing a gap between the lead and the pad during soldering
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H05K2201/1078 5 Leads having locally deformed portion, e.g. for retention
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H05K2201/10787 5 Leads having protrusions, e.g. for retention or insert stop
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H05K2201/10795 5 Details of lead tips, e.g. pointed
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H05K2201/10803 5 Tapered leads, i.e. leads having changing width or diameter
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H05K2201/1081 5 Special cross-section of a lead; Different cross-sections of different leads; Matching cross-section, e.g. matched to a land
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H05K2201/10818 5 Flat leads
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H05K2201/10825 6 Distorted or twisted flat leads, i.e. deformed by torque
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H05K2201/10833 6 having a curved or folded cross-section
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H05K2201/1084 5 Notched leads
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H05K2201/10848 5 Thinned leads
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H05K2201/10856 5 Divided leads, e.g. by slot in length direction of lead, or by branching of the lead
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H05K2201/10863 5 Adaptations of leads or holes for facilitating insertion
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H05K2201/10871 5 Leads having an integral insert stop
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H05K2201/10878 5 Means for retention of a lead in a hole
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H05K2201/10886 4 Other details
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H05K2201/10893 5 Grouped leads, i.e. element comprising multiple leads distributed around but not through a common insulator
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H05K2201/10901 5 Lead partly inserted in hole or via
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H05K2201/10909 5 Materials of terminal, e.g. of leads or electrodes of components
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H05K2201/10916 5 Terminals having auxiliary metallic piece, e.g. for soldering
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H05K2201/10924 5 Leads formed from a punched metal foil (affixing a prefabricated self-supporting metal foil pattern H05K3/202)
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H05K2201/10931 5 Exposed leads, i.e. encapsulation of component partly removed for exposing a part of lead, e.g. for soldering purposes
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H05K2201/10939 5 Lead of component used as a connector
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H05K2201/10946 5 Leads attached onto leadless component after manufacturing the component
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H05K2201/10954 3 Other details of electrical connections
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H05K2201/10962 4 Component not directly connected to the PCB
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H05K2201/10969 4 Metallic case or integral heatsink of component electrically connected to a pad on PCB
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H05K2201/10977 4 Encapsulated connections (applying non-metallic protective coatings for encapsulating mounted components H05K3/284)
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H05K2201/10984 4 Component carrying a connection agent, e.g. solder, adhesive (soldering leadless components having an array of bottom contacts H05K3/3436; BGA components H05K2201/10734)
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H05K2201/10992 4 Using different connection materials, e.g. different solders, for the same connection
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H05K2201/20 1 Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
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H05K2201/2009 2 Reinforced areas, e.g. for a specific part of a flexible printed circuit
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H05K2201/2018 2 Presence of a frame in a printed circuit or printed circuit assembly
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H05K2201/2027 2 Guiding means, e.g. for guiding flexible circuits
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H05K2201/2036 2 Permanent spacer or stand-off in a printed circuit or printed circuit assembly (pattern for applying drops or paste H05K2203/0545)
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H05K2201/2045 2 Protection against vibrations
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H05K2201/2054 2 Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
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H05K2201/2063 2 mixed adhesion layer containing metallic/inorganic and polymeric materials
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H05K2201/2072 2 Anchoring, i.e. one structure gripping into another (providing micro- or nanometer scale roughness on a metal surface H05K2203/0307)
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H05K2201/2081 2 Compound repelling a metal, e.g. solder
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H05K2201/209 2 Auto-mechanical connection between a component and a PCB or between two PCBs
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H05K2203/00 0 Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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H05K2203/01 1 Tools for processing; Objects used during processing
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H05K2203/0104 2 for patterning or coating
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H05K2203/0108 3 Male die used for patterning, punching or transferring
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H05K2203/0113 3 Female die used for patterning or transferring, e.g. temporary substrate having recessed pattern
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H05K2203/0117 3 Pattern shaped electrode used for patterning, e.g. plating or etching
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H05K2203/0121 3 Patterning, e.g. plating or etching by moving electrode
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H05K2203/0126 3 Dispenser, e.g. for solder paste, for supplying conductive paste for screen printing or for filling holes
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H05K2203/013 3 Inkjet printing, e.g. for printing insulating material or resist (using ink-jet printing to form a conductive pattern H05K3/125)
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H05K2203/0134 3 Drum, e.g. rotary drum or dispenser with a plurality of openings
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H05K2203/0139 3 Blade or squeegee, e.g. for screen printing or filling of holes
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H05K2203/0143 3 Using a roller; Specific shape thereof; Providing locally adhesive portions thereon
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H05K2203/0147 2 Carriers and holders
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H05K2203/0152 3 Temporary metallic carrier, e.g. for transferring material (affixing a prefabricated conductor pattern formed by electroplating or electroforming on a metallic carrier H05K3/205)
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H05K2203/0156 3 Temporary polymeric carrier or foil, e.g. for processing or transferring
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H05K2203/016 3 Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
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H05K2203/0165 3 Holder for holding a Printed Circuit Board [PCB] during processing, e.g. during screen printing
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H05K2203/0169 3 Using a temporary frame during processing
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H05K2203/0173 3 Template for holding a PCB having mounted components thereon
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H05K2203/0178 2 Projectile, e.g. for perforating substrate
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H05K2203/0182 2 Using a temporary spacer element or stand-off during processing
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H05K2203/0186 2 Mask formed or laid on PCB, the mask having recesses or openings specially designed for mounting components or body parts thereof
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H05K2203/0191 2 Using tape or non-metallic foil in a process, e.g. during filling of a hole with conductive paste
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H05K2203/0195 2 Tool for a process not provided for in H05K3/00, e.g. tool for handling objects using suction, for deforming objects, for applying local pressure
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H05K2203/02 1 Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
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H05K2203/0207 2 Partly drilling through substrate until a controlled depth, e.g. with end-point detection
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H05K2203/0214 2 Back-up or entry material, e.g. for mechanical drilling
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H05K2203/0221 2 Perforating
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H05K2203/0228 2 Cutting, sawing, milling or shearing
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H05K2203/0235 2 Laminating followed by cutting or slicing perpendicular to plane of the laminate; Embedding wires in an object and cutting or slicing the object perpendicular to direction of the wires
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H05K2203/0242 2 Cutting around hole, e.g. for disconnecting land or Plated Through-Hole [PTH] or for partly removing a PTH
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H05K2203/025 2 Abrading, e.g. grinding or sand blasting (deburring, rounding, bevelling or smoothing conductor edges H05K2203/0346)
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H05K2203/0257 2 Brushing, e.g. cleaning the conductive pattern by brushing or wiping
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H05K2203/0264 2 Peeling insulating layer, e.g. foil, or separating mask
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H05K2203/0271 2 Mechanical force other than pressure, e.g. shearing or pulling
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H05K2203/0278 2 Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
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H05K2203/0285 2 Using ultrasound, e.g. for cleaning, soldering or wet treatment
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H05K2203/0292 2 Using vibration, e.g. during soldering or screen printing
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H05K2203/03 1 Metal processing
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H05K2203/0307 2 Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
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H05K2203/0315 2 Oxidising metal
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H05K2203/0323 2 Working metal substrate or core, e.g. by etching, deforming
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H05K2203/033 2 Punching metal foil, e.g. solder foil (affixing a prefabricated self-supporting metal foil pattern H05K3/202)
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H05K2203/0338 2 Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component (affixing a prefabricated conductor pattern H05K3/20)
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H05K2203/0346 2 Deburring, rounding, bevelling or smoothing conductor edges
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H05K2203/0353 2 Making conductive layer thin, e.g. by etching (selective thinning for providing different thickness H05K2203/0369)
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H05K2203/0361 2 Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
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H05K2203/0369 2 Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
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H05K2203/0376 2 Etching temporary metallic carrier substrate
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H05K2203/0384 2 Etch stop layer, i.e. a buried barrier layer for preventing etching of layers under the etch stop layer
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H05K2203/0392 2 Pretreatment of metal, e.g. before finish plating, etching (improvement of the adhesion between an insulating substrate and a metal by special treatment of the metal H05K3/382)
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H05K2203/04 1 Soldering or other types of metallurgic bonding (using molten metal H05K2203/128)
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H05K2203/0405 2 Solder foil, tape or wire
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H05K2203/041 2 Solder preforms in the shape of solder balls (soldering leadless components having an array of bottom contacts H05K3/3436)
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H05K2203/0415 2 Small preforms other than balls, e.g. discs, cylinders or pillars
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H05K2203/042 2 Remote solder depot on the PCB, the solder flowing to the connections from this depot
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H05K2203/0425 2 Solder powder or solder coated metal powder
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H05K2203/043 2 Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
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H05K2203/0435 2 Metal coated solder, e.g. for passivation of solder balls
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H05K2203/044 2 Solder dip coating, i.e. coating printed conductors, e.g. pads by dipping in molten solder or by wave soldering
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H05K2203/0445 2 Removing excess solder on pads; removing solder bridges, e.g. for repairing or reworking
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H05K2203/045 2 Solder-filled plated through-hole [PTH] during processing wherein the solder is removed from the PTH after processing
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H05K2203/0455 2 PTH for surface mount device [SMD], e.g. wherein solder flows through the PTH during mounting
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H05K2203/046 2 Means for drawing solder, e.g. for removing excess solder from pads
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H05K2203/0465 2 Shape of solder, e.g. differing from spherical shape, different shapes due to different solder pads
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H05K2203/047 2 Soldering with different solders, e.g. two different solders on two sides of the PCB
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H05K2203/0475 2 Molten solder just before placing the component
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H05K2203/048 2 Self-alignment during soldering; Terminals, pads or shape of solder adapted therefor
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H05K2203/0485 2 Tacky flux, e.g. for adhering components during mounting
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H05K2203/049 2 Wire bonding
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H05K2203/0495 2 Cold welding
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H05K2203/05 1 Patterning and lithography; Masks; Details of resist
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H05K2203/0502 2 Patterning and lithography
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H05K2203/0505 3 Double exposure of the same photosensitive layer
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H05K2203/0508 3 Flood exposure
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H05K2203/0511 3 Diffusion patterning
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H05K2203/0514 3 Photodevelopable thick film, e.g. conductive or insulating paste
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H05K2203/0517 3 Electrographic patterning
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H05K2203/052 3 Magnetographic patterning
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H05K2203/0522 3 Using an adhesive pattern
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H05K2203/0525 3 Patterning by phototackifying or by photopatterning adhesive
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H05K2203/0528 3 Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
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H05K2203/0531 3 Decalcomania, i.e. transfer of a pattern detached from its carrier before affixing the pattern to the substrate
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H05K2203/0534 3 Offset printing, i.e. transfer of a pattern from a carrier onto the substrate by using an intermediate member
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H05K2203/0537 3 Transfer of pre-fabricated insulating pattern
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H05K2203/054 3 Continuous temporary metal layer over resist, e.g. for selective electroplating
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H05K2203/0542 3 Continuous temporary metal layer over metal pattern (reinforcing the conductive pattern characterised by the electroplating method H05K3/241)
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H05K2203/0545 3 Pattern for applying drops or paste; Applying a pattern made of drops or paste (using thick film techniques to apply conductive material by using a substrate with a shape pattern H05K3/1258)
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H05K2203/0548 2 Masks
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H05K2203/0551 3 Exposure mask directly printed on the PCB
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H05K2203/0554 3 Metal used as mask for etching vias, e.g. by laser ablation
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H05K2203/0557 3 Non-printed masks
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H05K2203/056 3 Using an artwork, i.e. a photomask for exposing photosensitive layers
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H05K2203/0562 2 Details of resist
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H05K2203/0565 3 Resist used only for applying catalyst, not for plating itself
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H05K2203/0568 3 Resist used for applying paste, ink or powder
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H05K2203/0571 3 Dual purpose resist, e.g. etch resist used as solder resist, solder resist used as plating resist
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H05K2203/0574 3 Stacked resist layers used for different processes
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H05K2203/0577 3 Double layer of resist having the same pattern
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H05K2203/058 3 Additional resists used for the same purpose but in different areas, i.e. not stacked
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H05K2203/0582 3 Coating by resist, i.e. resist used as mask for application of insulating coating or of second resist
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H05K2203/0585 3 Second resist used as mask for selective stripping of first resist
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H05K2203/0588 3 Second resist used as pattern over first resist
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H05K2203/0591 3 Organic non-polymeric coating, e.g. for inhibiting corrosion thereby preserving solderability
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H05K2203/0594 3 Insulating resist or coating with special shaped edges
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H05K2203/0597 3 Resist applied over the edges or sides of conductors, e.g. for protection during etching or plating (coating over pads H05K2201/09818)
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H05K2203/06 1 Lamination
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H05K2203/061 2 of previously made multilayered subassemblies (laminating only or mainly similar single-sided circuit boards H05K3/4617; laminating only or mainly similar double-sided circuit boards H05K3/462)
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H05K2203/063 2 of preperforated insulating layer
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H05K2203/065 2 Binding insulating layers without adhesive, e.g. by local heating or welding, before lamination of the whole PCB
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H05K2203/066 2 Transfer laminating of insulating material, e.g. resist as a whole layer, not as a pattern (transferring an insulating pattern H05K2203/0537)
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H05K2203/068 2 Features of the lamination press or of the lamination process, e.g. using special separator sheets
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H05K2203/07 1 Treatments involving liquids, e.g. plating, rinsing
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H05K2203/0703 2 Plating
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H05K2203/0706 3 Inactivating or removing catalyst, e.g. on surface of resist
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H05K2203/0709 3 Catalytic ink or adhesive for electroless plating (catalyst filler H05K2201/0236)
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H05K2203/0713 3 Plating poison, e.g. for selective plating or for preventing plating on resist
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H05K2203/0716 3 Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
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H05K2203/072 3 Electroless plating, e.g. finish plating or initial plating
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H05K2203/0723 3 Electroplating, e.g. finish plating
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H05K2203/0726 3 Electroforming, i.e. electroplating on a metallic carrier thereby forming a self-supporting structure
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H05K2203/073 3 Displacement plating, substitution plating or immersion plating, e.g. for finish plating
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H05K2203/0733 3 Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
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H05K2203/0736 2 Methods for applying liquids, e.g. spraying
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H05K2203/074 3 Features related to the fluid pressure
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H05K2203/0743 3 Mechanical agitation of fluid, e.g. during cleaning of the conductive pattern
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H05K2203/0746 3 Local treatment using a fluid jet, e.g. for removing or cleaning material; Providing mechanical pressure using a fluid jet
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H05K2203/075 3 Global treatment of printed circuits by fluid spraying, e.g. cleaning a conductive pattern using nozzles
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H05K2203/0753 3 Reversing fluid direction, e.g. in holes
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H05K2203/0756 2 Uses of liquids, e.g. rinsing, coating, dissolving
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H05K2203/0759 3 Forming a polymer layer by liquid coating, e.g. a non-metallic protective coating or an organic bonding layer
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H05K2203/0763 3 Treating individual holes or single row of holes, e.g. by nozzle
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H05K2203/0766 3 Rinsing, e.g. after cleaning or polishing a conductive pattern
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H05K2203/0769 3 Dissolving insulating materials, e.g. coatings, not used for developing resist after exposure
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H05K2203/0773 3 Dissolving the filler without dissolving the matrix material; Dissolving the matrix material without dissolving the filler
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H05K2203/0776 3 Uses of liquids not otherwise provided for in H05K2203/0759 - H05K2203/0773
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H05K2203/0779 2 characterised by the specific liquids involved
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H05K2203/0783 3 Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
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H05K2203/0786 3 Using an aqueous solution, e.g. for cleaning or during drilling of holes
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H05K2203/0789 4 Aqueous acid solution, e.g. for cleaning or etching
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H05K2203/0793 4 Aqueous alkaline solution, e.g. for cleaning or etching
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H05K2203/0796 4 Oxidant in aqueous solution, e.g. permanganate
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H05K2203/08 1 Treatments involving gases
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H05K2203/081 2 Blowing of gas, e.g. for cooling or for providing heat during solder reflowing
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H05K2203/082 2 Suction, e.g. for holding solder balls or components
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H05K2203/083 2 Evaporation or sublimation of a compound, e.g. gas bubble generating agent
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H05K2203/085 2 Using vacuum or low pressure
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H05K2203/086 2 Using an inert gas
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H05K2203/087 2 Using a reactive gas
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H05K2203/088 2 Using a vapour or mist, e.g. cleaning using water vapor
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H05K2203/09 1 Treatments involving charged particles
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H05K2203/092 2 Particle beam, e.g. using an electron beam or an ion beam
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H05K2203/095 2 Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
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H05K2203/097 3 Corona discharge
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H05K2203/10 1 Using electric, magnetic and electromagnetic fields; Using laser light
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H05K2203/101 2 Using electrical induction, e.g. for heating during soldering
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H05K2203/102 2 Using microwaves, e.g. for curing ink patterns or adhesive
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H05K2203/104 2 Using magnetic force, e.g. to align particles or for a temporary connection during processing
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H05K2203/105 2 Using an electrical field; Special methods of applying an electric potential (electroplating H05K2203/0723)
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H05K2203/107 2 Using laser light (shaping a substrate by laser ablation H05K3/0026)
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H05K2203/108 3 Using a plurality of lasers or laser light with a plurality of wavelengths
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H05K2203/11 1 Treatments characterised by their effect, e.g. heating, cooling, roughening
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H05K2203/1105 2 Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
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H05K2203/111 2 Preheating, e.g. before soldering
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H05K2203/1115 2 Resistance heating, e.g. by current through the PCB conductors or through a metallic mask
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H05K2203/1121 2 Cooling, e.g. specific areas of a PCB being cooled during reflow soldering (details related to cooling of mounted components H05K1/0203)
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H05K2203/1126 2 Firing, i.e. heating a powder or paste above the melting temperature of at least one of its constituents
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H05K2203/1131 2 Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
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H05K2203/1136 2 Conversion of insulating material into conductive material, e.g. by pyrolysis
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H05K2203/1142 2 Conversion of conductive material into insulating material or into dissolvable compound
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H05K2203/1147 2 Sealing or impregnating, e.g. of pores
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H05K2203/1152 2 Replicating the surface structure of a sacrificial layer, e.g. for roughening
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H05K2203/1157 2 Using means for chemical reduction
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H05K2203/1163 2 Chemical reaction, e.g. heating solder by exothermic reaction (oxidising metal H05K2203/0315)
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H05K2203/1168 2 Graft-polymerization
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H05K2203/1173 2 Differences in wettability, e.g. hydrophilic or hydrophobic areas
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H05K2203/1178 2 Means for venting or for letting gases escape
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H05K2203/1184 2 Underetching, e.g. etching of substrate under conductors or etching of conductor under dielectrics; Means for allowing or controlling underetching
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H05K2203/1189 2 Pressing leads, bumps or a die through an insulating layer
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H05K2203/1194 2 Thermal treatment leading to a different chemical state of a material, e.g. annealing for stress-relief, aging
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H05K2203/12 1 Using specific substances
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H05K2203/121 2 Metallo-organic compounds
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H05K2203/122 2 Organic non-polymeric compounds, e.g. oil, wax, thiol (using solvent H05K2203/0783)
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H05K2203/124 3 Heterocyclic organic compounds, e.g. azole, furan
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H05K2203/125 2 Inorganic compounds, e.g. silver salt
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H05K2203/127 2 Lubricants, e.g. during drilling of holes
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H05K2203/128 2 Molten metals, e.g. casting thereof, or melting by heating and excluding molten solder (spraying droplets of molten metal H05K2203/1344)
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H05K2203/13 1 Moulding and encapsulation; Deposition techniques; Protective layers
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H05K2203/1305 2 Moulding and encapsulation
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H05K2203/1311 3 Foil encapsulation, e.g. of mounted components
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H05K2203/1316 3 Moulded encapsulation of mounted components
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H05K2203/1322 3 Encapsulation comprising more than one layer
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H05K2203/1327 3 Moulding over PCB locally or completely (applying non-metallic protective coatings for encapsulating mounted components H05K3/284)
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H05K2203/1333 2 Deposition techniques, e.g. coating
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H05K2203/1338 3 Chemical vapour deposition
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H05K2203/1344 3 Spraying small metal particles or droplets of molten metal
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H05K2203/135 3 Electrophoretic deposition of insulating material
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H05K2203/1355 3 Powder coating of insulating material
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H05K2203/1361 3 Coating by immersion in coating bath (applying molten solder H05K3/3468)
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H05K2203/1366 3 Spraying coating (apparatus for coating printed circuit boards using liquid non-metallic coating compositions H05K3/0091)
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H05K2203/1372 3 Coating by using a liquid wave (solder dip coating H05K2203/04)
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H05K2203/1377 2 Protective layers
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H05K2203/1383 3 Temporary protective insulating layer
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H05K2203/1388 3 Temporary protective conductive layer
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H05K2203/1394 3 Covering open PTHs, e.g. by dry film resist or by metal disc
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H05K2203/14 1 Related to the order of processing steps
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H05K2203/1407 2 Applying catalyst before applying plating resist
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H05K2203/1415 2 Applying catalyst after applying plating resist
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H05K2203/1423 2 Applying catalyst before etching, e.g. plating catalyst in holes before etching circuit
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H05K2203/143 2 Treating holes before another process, e.g. coating holes before coating the substrate
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H05K2203/1438 2 Treating holes after another process, e.g. coating holes after coating the substrate (metal used as mask for etching vias H05K2203/0554)
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H05K2203/1446 2 Treatment after insertion of lead into hole, e.g. bending, cutting, caulking or curing of adhesive but excluding soldering
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H05K2203/1453 2 Applying the circuit pattern before another process, e.g. before filling of vias with conductive paste, before making printed resistors
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H05K2203/1461 2 Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
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H05K2203/1469 3 Circuit made after mounting or encapsulation of the components
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H05K2203/1476 2 Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
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H05K2203/1484 2 Simultaneous treatments, e.g. soldering lead-in-hole components simultaneously with surface mounted components
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H05K2203/1492 2 Periodical treatments, e.g. pulse plating of through-holes
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H05K2203/15 1 Position of the PCB during processing
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H05K2203/1509 2 Horizontally held PCB
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H05K2203/1518 2 Vertically held PCB
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H05K2203/1527 2 Obliquely held PCB
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H05K2203/1536 2 Temporarily stacked PCBs
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H05K2203/1545 2 Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
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H05K2203/1554 2 Rotating or turning the PCB in a continuous manner
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H05K2203/1563 2 Reversing the PCB
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H05K2203/1572 2 Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides
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H05K2203/1581 2 Treating the backside of the PCB, e.g. for heating during soldering or providing a liquid coating on the backside
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H05K2203/159 2 Using gravitational force; Processing against the gravity direction; Using centrifugal force
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H05K2203/16 1 Inspection; Monitoring; Aligning
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H05K2203/161 2 Using chemical substances, e.g. colored or fluorescent, for facilitating optical or visual inspection
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H05K2203/162 2 Testing a finished product, e.g. heat cycle testing of solder joints (patterns for electrical inspection or testing H05K1/0268)
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H05K2203/163 2 Monitoring a manufacturing process
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H05K2203/165 2 Stabilizing, e.g. temperature stabilization
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H05K2203/166 2 Alignment or registration; Control of registration
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H05K2203/167 2 Using mechanical means for positioning, alignment or registration, e.g. using rod-in-hole alignment
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H05K2203/168 2 Wrong mounting prevention
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H05K2203/17 1 Post-manufacturing processes
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H05K2203/171 2 Tuning, e.g. by trimming of printed components or high frequency circuits
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H05K2203/173 2 Adding connections between adjacent pads or conductors, e.g. for modifying or repairing (programmable, customizable or modifiable circuits H05K1/0286)
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H05K2203/175 2 Configurations of connections suitable for easy deletion, e.g. modifiable circuits or temporary conductors for electroplating; Processes for deleting connections
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H05K2203/176 2 Removing, replacing or disconnecting component; Easily removable component (thermal arrangements, e.g. to prevent overheating H05K1/0201)
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H05K2203/178 2 Demolishing, e.g. recycling, reverse engineering, destroying for security purposes; Using biodegradable materials
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H05K2203/30 1 Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
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H05K2203/302 2 Bending a rigid substrate; Breaking rigid substrates by bending (rigid circuit boards or rigid supports locally made bendable H05K1/0278)
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H05K2203/304 2 Protecting a component during manufacturing
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H05K2203/306 2 Lifting the component during or after mounting; Increasing the gap between component and PCB
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H05K2203/308 2 Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
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H05K999/00 0 dummy group
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H05K999/99 1 dummy group
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H10 SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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H10B ELECTRONIC MEMORY DEVICES
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H10B10/00 0 Static random access memory [SRAM] devices
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H10B10/10 1 SRAM devices comprising bipolar components
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H10B10/12 1 {comprising a MOSFET load element}
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H10B10/125 2 {the MOSFET being a thin film transistor [TFT]}
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H10B10/15 1 {comprising a resistor load element}
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H10B10/18 1 {Peripheral circuit regions}
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H10B12/00 0 Dynamic random access memory [DRAM] devices
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H10B12/01 1 {Manufacture or treatment}
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H10B12/02 2 {for one transistor one-capacitor [1T-1C] memory cells}
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H10B12/03 3 {Making the capacitor or connections thereto}
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H10B12/033 4 {the capacitor extending over the transistor}
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H10B12/0335 5 {Making a connection between the transistor and the capacitor, e.g. plug}
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H10B12/036 4 {the capacitor extending under the transistor}
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H10B12/038 4 {the capacitor being in a trench in the substrate}
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H10B12/0383 5 {wherein the transistor is vertical}
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H10B12/0385 5 {Making a connection between the transistor and the capacitor, e.g. buried strap}
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H10B12/0387 5 {Making the trench}
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H10B12/05 3 {Making the transistor}
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H10B12/053 4 {the transistor being at least partially in a trench in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383)}
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H10B12/056 4 {the transistor being a FinFET}
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H10B12/09 2 {with simultaneous manufacture of the peripheral circuit region and memory cells}
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H10B12/10 1 DRAM devices comprising bipolar components
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H10B12/20 1 {DRAM devices comprising floating-body transistors, e.g. floating-body cells}
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H10B12/30 1 {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells}
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H10B12/31 2 {having a storage electrode stacked over the transistor}
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H10B12/312 3 {with a bit line higher than the capacitor}
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H10B12/315 3 {with the capacitor higher than a bit line}
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H10B12/318 3 {the storage electrode having multiple segments}
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H10B12/33 2 {the capacitor extending under the transistor}
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H10B12/34 2 {the transistor being at least partially in a trench in the substrate}
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H10B12/36 2 {the transistor being a FinFET}
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H10B12/37 2 {the capacitor being at least partially in a trench in the substrate}
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H10B12/373 3 {the capacitor extending under or around the transistor}
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H10B12/377 3 {having a storage electrode extension located over the transistor}
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H10B12/39 2 {the capacitor and the transistor being in a same trench}
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H10B12/395 3 {the transistor being vertical}
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H10B12/48 2 {Data lines or contacts therefor}
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H10B12/482 3 {Bit lines}
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H10B12/485 3 {Bit line contacts}
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H10B12/488 3 {Word lines}
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H10B12/50 1 {Peripheral circuit region structures}
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H10B20/00 0 Read-only memory [ROM] devices
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H10B20/10 1 ROM devices comprising bipolar components
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H10B20/20 1 Programmable ROM [PROM] devices comprising field-effect components (H10B20/10 takes precedence)
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H10B20/25 2 One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
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H10B20/27 1 {ROM only}
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H10B20/30 2 {having the source region and the drain region on the same level, e.g. lateral transistors}
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H10B20/34 3 {Source electrode or drain electrode programmed}
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H10B20/36 3 {Gate programmed, e.g. different gate material or no gate}
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H10B20/363 4 {Gate conductor programmed}
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H10B20/367 4 {Gate dielectric programmed, e.g. different thickness}
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H10B20/38 3 {Doping programmed, e.g. mask ROM}
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H10B20/383 4 {Channel doping programmed}
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H10B20/387 4 {Source region or drain region doping programmed}
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H10B20/40 2 {having the source region and drain region on different levels, e.g. vertical channel}
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H10B20/50 2 {having transistors on different levels, e.g. 3D ROM}
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H10B20/60 1 {Peripheral circuit regions}
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H10B20/65 2 {of memory structures of the ROM only type}
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H10B41/00 0 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
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H10B41/10 1 characterised by the top-view layout
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H10B41/20 1 characterised by three-dimensional arrangements, e.g. with cells on different height levels
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H10B41/23 2 with source and drain on different levels, e.g. with sloping channels
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H10B41/27 3 the channels comprising vertical portions, e.g. U-shaped channels
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H10B41/30 1 characterised by the memory core region
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H10B41/35 2 with a cell select transistor, e.g. NAND
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H10B41/40 1 characterised by the peripheral circuit region
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H10B41/41 2 of a memory region comprising a cell select transistor, e.g. NAND
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H10B41/42 2 Simultaneous manufacture of periphery and memory cells
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H10B41/43 3 comprising only one type of peripheral transistor
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H10B41/44 4 with a control gate layer also being used as part of the peripheral transistor
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H10B41/46 4 with an inter-gate dielectric layer also being used as part of the peripheral transistor
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H10B41/47 4 with a floating-gate layer also being used as part of the peripheral transistor
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H10B41/48 4 with a tunnel dielectric layer also being used as part of the peripheral transistor
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H10B41/49 3 comprising different types of peripheral transistor
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H10B41/50 1 characterised by the boundary region between the core region and the peripheral circuit region
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H10B41/60 1 the control gate being a doped region, e.g. single-poly memory cell
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H10B41/70 1 the floating gate being an electrode shared by two or more components
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H10B43/00 0 EEPROM devices comprising charge-trapping gate insulators
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H10B43/10 1 characterised by the top-view layout
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H10B43/20 1 characterised by three-dimensional arrangements, e.g. with cells on different height levels
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H10B43/23 2 with source and drain on different levels, e.g. with sloping channels
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H10B43/27 3 the channels comprising vertical portions, e.g. U-shaped channels
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H10B43/30 1 characterised by the memory core region
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H10B43/35 2 with cell select transistors, e.g. NAND
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H10B43/40 1 characterised by the peripheral circuit region
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H10B43/50 1 characterised by the boundary region between the core and peripheral circuit regions
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H10B51/00 0 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
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H10B51/10 1 characterised by the top-view layout
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H10B51/20 1 characterised by the three-dimensional arrangements, e.g. with cells on different height levels
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H10B51/30 1 characterised by the memory core region
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H10B51/40 1 characterised by the peripheral circuit region
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H10B51/50 1 characterised by the boundary region between the core and peripheral circuit regions
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H10B53/00 0 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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H10B53/10 1 characterised by the top-view layout
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H10B53/20 1 characterised by the three-dimensional arrangements, e.g. with cells on different height levels
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H10B53/30 1 characterised by the memory core region
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H10B53/40 1 characterised by the peripheral circuit region
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H10B53/50 1 characterised by the boundary region between the core and peripheral circuit regions
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H10B61/00 0 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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H10B61/10 1 {comprising components having two electrodes, e.g. diodes or MIM elements}
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H10B61/20 1 {comprising components having three or more electrodes, e.g. transistors}
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H10B61/22 2 {of the field-effect transistor [FET] type}
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H10B63/00 0 Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
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H10B63/10 1 Phase change RAM [PCRAM, PRAM] devices
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H10B63/20 1 {comprising selection components having two electrodes, e.g. diodes}
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H10B63/22 2 {of the metal-insulator-metal type}
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H10B63/24 2 {of the Ovonic threshold switching type}
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H10B63/30 1 {comprising selection components having three or more electrodes, e.g. transistors}
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H10B63/32 2 {of the bipolar type}
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H10B63/34 2 {of the vertical channel field-effect transistor type}
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H10B63/80 1 {Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays}
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H10B63/82 2 {the switching components having a common active material layer}
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H10B63/84 2 {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
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H10B63/845 3 {the switching components being connected to a common vertical conductor}
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H10B69/00 0 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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H10B80/00 0 Assemblies of multiple devices comprising at least one memory device covered by this subclass
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H10B99/00 0 Subject matter not provided for in other groups of this subclass
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H10B99/10 1 {Memory cells having a cross-point geometry}
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H10B99/14 1 {comprising memory cells that only have passive resistors or passive capacitors}
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H10B99/16 1 {comprising memory cells having diodes}
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H10B99/20 1 {comprising memory cells having thyristors}
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H10B99/22 1 {including field-effect components}
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H10K ORGANIC ELECTRIC SOLID-STATE DEVICES
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H10K10/00 0 Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier (integrated devices or assemblies of multiple devices H10K19/00)
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H10K10/10 1 Organic capacitors or resistors comprising a potential-jump barrier or surface barrier
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H10K10/20 1 Organic diodes
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H10K10/23 2 Schottky diodes
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H10K10/26 2 Diodes comprising organic-organic junctions
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H10K10/29 2 Diodes comprising organic-inorganic heterojunctions
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H10K10/40 1 Organic transistors
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H10K10/43 2 Bipolar transistors, e.g. organic bipolar junction transistors [OBJT]
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H10K10/46 2 Field-effect transistors, e.g. organic thin-film transistors [OTFT] (H10K10/43 takes precedence)
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H10K10/462 3 {Insulated gate field-effect transistors [IGFETs]}
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H10K10/464 4 {Lateral top-gate IGFETs comprising only a single gate}
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H10K10/466 4 {Lateral bottom-gate IGFETs comprising only a single gate}
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H10K10/468 4 {characterised by the gate dielectrics}
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H10K10/471 5 {the gate dielectric comprising only organic materials}
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H10K10/472 5 {the gate dielectric comprising only inorganic materials}
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H10K10/474 5 {the gate dielectric comprising a multilayered structure}
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H10K10/476 6 {comprising at least one organic layer and at least one inorganic layer}
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H10K10/478 5 {the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix}
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H10K10/481 4 {characterised by the gate conductors}
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H10K10/482 5 {the IGFET comprising multiple separately-addressable gate electrodes}
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H10K10/484 4 {characterised by the channel regions}
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H10K10/486 5 {the channel region comprising two or more active layers, e.g. forming pn heterojunctions}
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H10K10/488 5 {the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction}
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H10K10/491 4 {Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]}
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H10K10/50 1 Bistable switching devices
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H10K10/701 1 {Organic molecular electronic devices}
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H10K10/80 1 Constructional details
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H10K10/82 2 Electrodes
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H10K10/84 3 Ohmic electrodes, e.g. source or drain electrodes
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H10K10/86 3 Schottky electrodes
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H10K10/88 2 Passivation; Containers; Encapsulations
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H10K19/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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H10K19/10 1 comprising field-effect transistors
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H10K19/20 1 comprising components having an active region that includes an inorganic semiconductor
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H10K19/201 1 {Integrated devices having a three-dimensional layout, e.g. 3D ICs}
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H10K19/202 1 {Integrated devices comprising a common active layer}
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H10K19/80 1 Interconnections, e.g. terminals
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H10K19/901 1 {Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching}
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H10K30/00 0 Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation (integrated devices or assemblies of multiple devices H10K39/00, H10K65/00; electrolytic light-sensitive devices H01G9/20)
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H10K30/10 1 comprising heterojunctions between organic semiconductors and inorganic semiconductors
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H10K30/15 2 Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 (photo-electrochemical devices comprising a liquid electrolyte or a solid electrolyte H01G9/20)
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H10K30/151 3 {the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2}
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H10K30/152 3 {the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO}
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H10K30/20 1 comprising organic-organic junctions, e.g. donor-acceptor junctions
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H10K30/211 2 {comprising multiple junctions, e.g. double heterojunctions}
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H10K30/30 1 comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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H10K30/35 2 comprising inorganic nanostructures, e.g. CdSe nanoparticles
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H10K30/352 3 {the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer}
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H10K30/353 2 {comprising blocking layers, e.g. exciton blocking layers}
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H10K30/354 1 {comprising a metal-insulator-semiconductor [m-i-s] structure}
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H10K30/40 1 comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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H10K30/451 1 {comprising a metal-semiconductor-metal [m-s-m] structure}
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H10K30/50 1 Photovoltaic [PV] devices
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H10K30/53 2 in the form of fibres or tubes, e.g. photovoltaic fibres
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H10K30/57 2 comprising multiple junctions, e.g. tandem PV cells
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H10K30/60 1 in which radiation controls flow of current through the devices, e.g. photoresistors
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H10K30/65 2 Light-sensitive field-effect devices, e.g. phototransistors
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H10K30/671 1 {Organic radiation-sensitive molecular electronic devices}
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H10K30/80 1 Constructional details
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H10K30/81 2 Electrodes
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H10K30/82 3 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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H10K30/821 4 {comprising carbon nanotubes}
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H10K30/83 4 comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
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H10K30/84 2 Layers having high charge carrier mobility
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H10K30/85 3 Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
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H10K30/86 3 Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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H10K30/865 2 {Intermediate layers comprising a mixture of materials of the adjoining active layers}
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H10K30/87 2 Light-trapping means
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H10K30/88 2 Passivation; Containers; Encapsulations
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H10K30/89 2 Terminals, e.g. bond pads
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H10K39/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
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H10K39/10 1 Organic photovoltaic [PV] modules; Arrays of single organic PV cells
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H10K39/12 2 Electrical configurations of PV cells, e.g. series connections or parallel connections
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H10K39/15 2 comprising both organic PV cells and inorganic PV cells
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H10K39/18 2 Interconnections, e.g. terminals
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H10K39/30 1 Devices controlled by radiation
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H10K39/32 2 Organic image sensors
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H10K39/34 3 integrated with organic light-emitting diodes [OLED]
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H10K39/36 2 Devices specially adapted for detecting X-ray radiation
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H10K39/38 2 Interconnections, e.g. terminals
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H10K39/401 1 {Integrated devices having a three-dimensional layout, e.g. 3D ICs}
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H10K39/501 1 {Integrated devices comprising a common active layer}
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H10K39/601 1 {Assemblies of multiple devices comprising at least one organic radiation-sensitive element}
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H10K39/621 2 {comprising only organic radiation-sensitive elements}
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H10K50/00 0 Organic light-emitting devices (integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36)
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H10K50/10 1 OLEDs or polymer light-emitting diodes [PLED]
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H10K50/11 2 characterised by the electroluminescent [EL] layers
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H10K50/115 3 comprising active inorganic nanostructures, e.g. luminescent quantum dots
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H10K50/12 3 comprising dopants
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H10K50/121 4 {for assisting energy transfer, e.g. sensitization}
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H10K50/125 3 specially adapted for multicolour light emission, e.g. for emitting white light
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H10K50/13 4 comprising stacked EL layers within one EL unit
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H10K50/131 5 {with spacer layers between the electroluminescent layers}
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H10K50/135 3 comprising mobile ions
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H10K50/14 2 Carrier transporting layers
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H10K50/15 3 Hole transporting layers
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H10K50/155 4 comprising dopants
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H10K50/156 4 {comprising a multilayered structure}
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H10K50/157 4 {between the light-emitting layer and the cathode}
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H10K50/16 3 Electron transporting layers
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H10K50/165 4 comprising dopants
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H10K50/166 4 {comprising a multilayered structure}
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H10K50/167 4 {between the light-emitting layer and the anode}
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H10K50/17 2 Carrier injection layers
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H10K50/171 3 {Electron injection layers}
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H10K50/18 2 Carrier blocking layers
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H10K50/181 3 {Electron blocking layers}
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H10K50/182 2 {OLED comprising a fiber structure}
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H10K50/19 2 Tandem OLEDs
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H10K50/30 1 Organic light-emitting transistors
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H10K50/401 1 {Organic light-emitting molecular electronic devices}
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H10K50/80 1 Constructional details
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H10K50/805 2 Electrodes
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H10K50/81 3 Anodes
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H10K50/813 4 characterised by their shape
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H10K50/814 4 combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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H10K50/816 4 Multilayers, e.g. transparent multilayers
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H10K50/818 4 Reflective anodes, e.g. ITO combined with thick metallic layers
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H10K50/82 3 Cathodes
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H10K50/822 4 characterised by their shape
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H10K50/824 4 combined with auxiliary electrodes
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H10K50/826 4 Multilayers, e.g. opaque multilayers
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H10K50/828 4 Transparent cathodes, e.g. comprising thin metal layers
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H10K50/84 2 Passivation; Containers; Encapsulations
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H10K50/841 3 {Self-supporting sealing arrangements}
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H10K50/842 3 Containers
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H10K50/8423 4 {Metallic sealing arrangements}
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H10K50/8426 4 {Peripheral sealing arrangements, e.g. adhesives, sealants}
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H10K50/8428 4 {Vertical spacers, e.g. arranged between the sealing arrangement and the OLED}
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H10K50/844 3 Encapsulations
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H10K50/8445 4 {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers}
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H10K50/846 3 {comprising getter material or desiccants}
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H10K50/85 2 Arrangements for extracting light from the devices
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H10K50/852 3 comprising a resonant cavity structure, e.g. Bragg reflector pair
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H10K50/854 3 comprising scattering means
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H10K50/856 3 comprising reflective means
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H10K50/858 3 comprising refractive means, e.g. lenses
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H10K50/86 2 Arrangements for improving contrast, e.g. preventing reflection of ambient light
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H10K50/865 3 {comprising light absorbing layers, e.g. light-blocking layers}
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H10K50/868 2 {Arrangements for polarized light emission (H10K50/86 takes precedence)}
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H10K50/87 2 Arrangements for heating or cooling
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H10K50/88 2 Terminals, e.g. bond pads
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H10K59/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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H10K59/10 1 OLED displays
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H10K59/12 2 Active-matrix OLED [AMOLED] displays
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H10K59/1201 3 {Manufacture or treatment}
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H10K59/121 3 characterised by the geometry or disposition of pixel elements
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H10K59/1213 4 {the pixel elements being TFTs}
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H10K59/1216 4 {the pixel elements being capacitors}
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H10K59/122 3 Pixel-defining structures or layers, e.g. banks
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H10K59/123 3 Connection of the pixel electrodes to the thin film transistors [TFT]
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H10K59/124 3 Insulating layers formed between TFT elements and OLED elements
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H10K59/125 3 including organic TFTs [OTFT]
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H10K59/126 3 Shielding, e.g. light-blocking means over the TFTs
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H10K59/127 3 comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
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H10K59/1275 4 {Electrical connections of the two substrates}
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H10K59/128 3 comprising two independent displays, e.g. for emitting information from two major sides of the display
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H10K59/129 3 Chiplets
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H10K59/13 3 comprising photosensors that control luminance
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H10K59/131 3 Interconnections, e.g. wiring lines or terminals
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H10K59/1315 4 {comprising structures specially adapted for lowering the resistance}
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H10K59/17 2 Passive-matrix OLED displays
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H10K59/173 3 comprising banks or shadow masks
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H10K59/176 3 comprising two independent displays, e.g. for emitting information from two major sides of the display
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H10K59/179 3 Interconnections, e.g. wiring lines or terminals
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H10K59/1795 4 {comprising structures specially adapted for lowering the resistance}
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H10K59/18 2 Tiled displays
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H10K59/19 2 Segment displays
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H10K59/221 2 {Static displays, e.g. displaying permanent logos}
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H10K59/30 1 Devices specially adapted for multicolour light emission
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H10K59/32 2 Stacked devices having two or more layers, each emitting at different wavelengths
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H10K59/35 2 comprising red-green-blue [RGB] subpixels
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H10K59/351 3 {comprising more than three subpixels, e.g. red-green-blue-white [RGBW]}
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H10K59/352 3 {the areas of the RGB subpixels being different}
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H10K59/353 3 {characterised by the geometrical arrangement of the RGB subpixels}
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H10K59/38 2 comprising colour filters or colour changing media [CCM]
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H10K59/40 1 OLEDs integrated with touch screens
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H10K59/50 1 OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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H10K59/60 1 OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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H10K59/65 2 OLEDs integrated with inorganic image sensors
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H10K59/70 1 OLEDs integrated with inorganic light-emitting elements, e.g. with inorganic electroluminescent elements
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H10K59/751 1 {Integrated devices having a three-dimensional layout, e.g. 3D ICs}
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H10K59/771 1 {Integrated devices comprising a common active layer}
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H10K59/80 1 Constructional details
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H10K59/805 2 {Electrodes}
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H10K59/8051 3 {Anodes}
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H10K59/80515 4 {characterised by their shape}
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H10K59/80516 4 {combined with auxiliary electrodes, e.g. ITO layer combined with metal lines}
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H10K59/80517 4 {Multilayers, e.g. transparent multilayers}
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H10K59/80518 4 {Reflective anodes, e.g. ITO combined with thick metallic layers}
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H10K59/8052 3 {Cathodes}
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H10K59/80521 4 {characterised by their shape}
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H10K59/80522 4 {combined with auxiliary electrodes}
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H10K59/80523 4 {Multilayers, e.g. opaque multilayers}
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H10K59/80524 4 {Transparent cathodes, e.g. comprising thin metal layers}
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H10K59/82 2 Interconnections, e.g. terminals (H10K59/131, H10K59/179 take precedence)
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H10K59/84 2 Parallel electrical configurations of multiple OLEDs
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H10K59/86 2 Series electrical configurations of multiple OLEDs
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H10K59/87 2 {Passivation; Containers; Encapsulations}
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H10K59/871 3 {Self-supporting sealing arrangements}
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H10K59/872 4 {Containers}
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H10K59/8721 4 {Metallic sealing arrangements}
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H10K59/8722 4 {Peripheral sealing arrangements, e.g. adhesives, sealants}
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H10K59/8723 4 {Vertical spacers, e.g. arranged between the sealing arrangement and the OLED}
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H10K59/873 3 {Encapsulations}
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H10K59/8731 4 {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers}
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H10K59/874 3 {including getter material or desiccant}
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H10K59/875 2 {Arrangements for extracting light from the devices}
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H10K59/876 3 {comprising a resonant cavity structure, e.g. Bragg reflector pair}
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H10K59/877 3 {comprising scattering means}
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H10K59/878 3 {comprising reflective means}
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H10K59/879 3 {comprising refractive means, e.g. lenses}
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H10K59/8791 2 {Arrangements for improving contrast, e.g. preventing reflection of ambient light}
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H10K59/8792 3 {comprising light absorbing layers, e.g. black layers}
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H10K59/8793 2 {Arrangements for polarized light emission (H10K59/8791 takes precedence)}
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H10K59/8794 2 {Arrangements for heating and cooling}
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H10K59/88 2 Dummy elements, i.e. elements having non-functional features
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H10K59/90 1 Assemblies of multiple devices comprising at least one organic light-emitting element
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H10K59/95 2 comprising only organic light-emitting elements
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H10K65/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers (organic image sensors integrated with organic light-emitting devices H10K39/34; OLED displays integrated with photosensors H10K59/13)
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H10K71/00 0 Manufacture or treatment specially adapted for the organic devices covered by this subclass
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H10K71/10 1 Deposition of organic active material
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H10K71/12 2 using liquid deposition, e.g. spin coating
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H10K71/125 3 {using electrolytic deposition e.g. in-situ electropolymerisation}
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H10K71/13 3 using printing techniques, e.g. ink-jet printing or screen printing
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H10K71/135 4 {using ink-jet printing}
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H10K71/15 3 characterised by the solvent used
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H10K71/16 2 using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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H10K71/162 3 {using laser ablation}
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H10K71/164 3 {using vacuum deposition}
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H10K71/166 3 {using selective deposition, e.g. using a mask}
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H10K71/18 2 using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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H10K71/191 2 {characterised by provisions for the orientation or alignment of the layer to be deposited}
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H10K71/20 1 Changing the shape of the active layer in the devices, e.g. patterning
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H10K71/211 2 {by selective transformation of an existing layer}
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H10K71/221 2 {by lift-off techniques}
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H10K71/231 2 {by etching of existing layers}
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H10K71/233 3 {by photolithographic etching}
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H10K71/236 3 {using printing techniques, e.g. applying the etch liquid using an ink jet printer}
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H10K71/30 1 Doping active layers, e.g. electron transporting layers
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H10K71/311 1 {Purifying organic semiconductor materials}
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H10K71/40 1 Thermal treatment, e.g. annealing in the presence of a solvent vapour
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H10K71/421 2 {using coherent electromagnetic radiation, e.g. laser annealing}
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H10K71/441 2 {in the presence of solvent vapors, e.g. solvent vapour annealing}
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H10K71/50 1 Forming devices by joining two substrates together, e.g. lamination techniques
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H10K71/60 1 Forming conductive regions or layers, e.g. electrodes
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H10K71/611 2 {using printing deposition, e.g. ink jet printing}
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H10K71/621 1 {Providing a shape to conductive layers, e.g. patterning or selective deposition}
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H10K71/70 1 Testing, e.g. accelerated lifetime tests
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H10K71/80 1 using temporary substrates
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H10K71/811 1 {Controlling the atmosphere during processing (H10K71/40 takes precedence)}
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H10K71/821 1 {Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer}
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H10K71/831 1 {Aging}
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H10K71/841 1 {Applying alternating current [AC] during manufacturing or treatment}
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H10K71/851 1 {Division of substrate}
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H10K71/861 1 {Repairing}
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H10K77/00 0 Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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H10K77/10 1 Substrates, e.g. flexible substrates
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H10K77/111 2 {Flexible substrates}
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H10K85/00 0 Organic materials used in the body or electrodes of devices covered by this subclass
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H10K85/10 1 Organic polymers or oligomers
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H10K85/111 2 {comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene}
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H10K85/113 3 {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene}
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H10K85/1135 4 {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
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H10K85/114 3 {Poly-phenylenevinylene; Derivatives thereof}
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H10K85/115 3 {Polyfluorene; Derivatives thereof}
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H10K85/141 2 {comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE}
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H10K85/143 3 {Polyacetylene; Derivatives thereof}
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H10K85/146 3 {poly N-vinylcarbazol; Derivatives thereof}
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H10K85/151 2 {Copolymers}
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H10K85/154 2 {Ladder-type polymers}
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H10K85/20 1 Carbon compounds, e.g. carbon nanotubes or fullerenes
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H10K85/211 2 {Fullerenes, e.g. C60}
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H10K85/215 3 {comprising substituents, e.g. PCBM}
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H10K85/221 2 {Carbon nanotubes}
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H10K85/225 3 {comprising substituents}
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H10K85/30 1 Coordination compounds
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H10K85/311 2 {Phthalocyanine}
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H10K85/321 2 {Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]}
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H10K85/322 3 {comprising boron}
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H10K85/324 3 {comprising aluminium, e.g. Alq3}
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H10K85/326 3 {comprising gallium}
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H10K85/331 2 {Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni}
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H10K85/341 2 {Transition metal complexes, e.g. Ru(II)polypyridine complexes (H10K85/331 takes precedence)}
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H10K85/342 3 {comprising iridium}
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H10K85/344 3 {comprising ruthenium}
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H10K85/346 3 {comprising platinum}
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H10K85/348 3 {comprising osmium}
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H10K85/351 2 {Metal complexes comprising lanthanides or actinides, e.g. comprising europium}
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H10K85/361 2 {Polynuclear complexes, i.e. complexes comprising two or more metal centers}
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H10K85/371 2 {Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver}
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H10K85/381 2 {Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc}
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H10K85/40 1 Organosilicon compounds, e.g. TIPS pentacene
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H10K85/50 1 Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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H10K85/60 1 Organic compounds having low molecular weight (H10K85/10 - H10K85/50 take precedence)
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H10K85/611 2 {Charge transfer complexes}
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H10K85/615 2 {Polycyclic condensed aromatic hydrocarbons, e.g. anthracene}
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H10K85/621 3 {Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide}
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H10K85/622 3 {containing four rings, e.g. pyrene}
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H10K85/623 3 {containing five rings, e.g. pentacene}
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H10K85/624 3 {containing six or more rings}
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H10K85/625 3 {containing at least one aromatic ring having 7 or more carbon atoms, e.g. azulene}
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H10K85/626 3 {containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene}
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H10K85/631 2 {Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine}
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H10K85/633 3 {comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom}
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H10K85/636 3 {comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom}
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H10K85/649 2 {Aromatic compounds comprising a hetero atom}
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H10K85/652 3 {Cyanine dyes}
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H10K85/653 3 {comprising only oxygen as heteroatom}
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H10K85/654 3 {comprising only nitrogen as heteroatom (H10K85/652 takes precedence)}
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H10K85/655 3 {comprising only sulfur as heteroatom}
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H10K85/656 3 {comprising two or more different heteroatoms per ring (H10K85/652 takes precedence)}
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H10K85/6565 4 {Oxadiazole compounds}
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H10K85/657 3 {Polycyclic condensed heteroaromatic hydrocarbons}
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H10K85/6572 4 {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole}
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H10K85/6574 4 {comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes}
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H10K85/6576 4 {comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene}
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H10K85/658 2 {Organoboranes}
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H10K85/701 1 {Langmuir Blodgett films}
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H10K85/731 1 {Liquid crystalline materials}
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H10K85/761 1 {Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes}
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H10K85/791 1 {Starburst compounds}
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H10K99/00 0 Subject matter not provided for in other groups of this subclass
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H10K2101/00 0 Properties of the organic materials covered by group H10K85/00
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H10K2101/10 1 Triplet emission
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H10K2101/20 1 Delayed fluorescence emission
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H10K2101/25 2 using exciplex
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H10K2101/27 1 {Combination of fluorescent and phosphorescent emission}
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H10K2101/30 1 Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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H10K2101/40 1 Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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H10K2101/50 1 Oxidation-reduction potentials, e.g. excited state redox potentials
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H10K2101/60 1 Up-conversion, e.g. by triplet-triplet annihilation
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H10K2101/70 1 Down-conversion, e.g. by singlet fission
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H10K2101/90 1 {Multiple hosts in the emissive layer}
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H10K2102/00 0 Constructional details relating to the organic devices covered by this subclass
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H10K2102/10 1 Transparent electrodes, e.g. using graphene
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H10K2102/101 2 {comprising transparent conductive oxides [TCO]}
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H10K2102/102 3 {comprising tin oxides, e.g. fluorine-doped SnO2}
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H10K2102/103 3 {comprising indium oxides, e.g. ITO}
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H10K2102/20 1 Metallic electrodes, e.g. using a stack of layers
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H10K2102/301 1 {Details of OLEDs}
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H10K2102/3023 3 {Direction of light emission}
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H10K2102/3026 4 {Top emission}
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H10K2102/3031 4 {Two-side emission, e.g. transparent OLEDs [TOLED]}
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H10K2102/3035 4 {Edge emission}
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H10K2102/311 2 {Flexible OLED}
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H10K2102/321 2 {Inverted OLED, i.e. having cathode between substrate and anode}
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H10K2102/331 2 {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
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H10K2102/341 2 {Short-circuit prevention}
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H10N10/00 0 Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N19/00)
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H10N10/17 2 characterised by the structure or configuration of the cell or thermocouple forming the device
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H10N10/817 3 the junction being non-separable, e.g. being cemented, sintered or soldered
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H10N10/85 2 Thermoelectric active materials
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H10N15/00 0 Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00)
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H10N15/10 1 Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
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H10N15/20 1 Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point
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H10N19/101 1 {Multiple thermocouples connected in a cascade arrangement}
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H10N30/00 0 Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N39/00)
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H10N30/03 2 Assembling devices that include piezoelectric or electrostrictive parts
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H10N30/04 2 Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
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H10N30/05 2 Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
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H10N30/053 3 by integrally sintering piezoelectric or electrostrictive bodies and electrodes
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H10N30/06 2 Forming electrodes or interconnections, e.g. leads or terminals
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H10N30/063 3 Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
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H10N30/067 3 Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
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H10N30/07 2 Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
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H10N30/071 3 Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
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H10N30/072 3 by laminating or bonding of piezoelectric or electrostrictive bodies
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H10N30/073 4 by fusion of metals or by adhesives
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H10N30/074 3 by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
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H10N30/08 2 Shaping or machining of piezoelectric or electrostrictive bodies
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H10N30/081 3 by coating or depositing using masks, e.g. lift-off
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H10N30/09 2 Forming piezoelectric or electrostrictive materials
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H10N30/092 3 Forming composite materials
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H10N30/093 3 Forming inorganic materials
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H10N30/098 3 Forming organic materials
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H10N30/1051 1 {based on piezoelectric or electrostrictive films or coatings}
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H10N30/10513 2 {characterised by the underlying bases, e.g. substrates}
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H10N30/10516 3 {Intermediate layers, e.g. barrier, adhesion or growth control buffer layers}
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H10N30/1061 1 {based on piezoelectric or electrostrictive fibres}
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H10N30/1071 1 {with electrical and mechanical input and output, e.g. having combined actuator and sensor parts}
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H10N30/20 1 with electrical input and mechanical output, e.g. functioning as actuators or vibrators
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H10N30/202 2 {using longitudinal or thickness displacement combined with bending, shear or torsion displacement}
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H10N30/204 2 {using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders}
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H10N30/2042 4 {Cantilevers, i.e. having one fixed end}
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H10N30/2044 5 {having multiple segments mechanically connected in series, e.g. zig-zag type}
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H10N30/206 2 {using only longitudinal or thickness displacement, e.g. d33 or d31 type devices}
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H10N30/208 2 {using shear or torsion displacement, e.g. d15 type devices}
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H10N30/30 1 with mechanical input and electrical output, e.g. functioning as generators or sensors
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H10N30/302 2 {Sensors}
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H10N30/40 1 with electrical input and electrical output, e.g. functioning as transformers
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H10N30/501 2 {with non-rectangular cross-section in stacking direction, e.g. polygonal, trapezoidal}
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H10N30/503 2 {with non-rectangular cross-section orthogonal to the stacking direction, e.g. polygonal, circular}
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H10N30/506 2 {of cylindrical shape with stacking in radial direction, e.g. coaxial or spiral type rolls}
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H10N30/508 2 {adapted for alleviating internal stress, e.g. cracking control layers}
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H10N30/802 2 {Drive or control circuitry or methods for piezoelectric or electrostrictive devices not otherwise provided for}
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H10N30/804 3 {for piezoelectric transformers (conversion of DC or AC power H02M; for operating discharge lamps H05B41/282)}
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H10N30/85 2 Piezoelectric or electrostrictive active materials
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H10N30/852 3 {Composite materials, e.g. having 1-3 or 2-2 type connectivity}
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H10N30/853 3 Ceramic compositions
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H10N30/8536 4 {Alkaline earth metal based oxides, e.g. barium titanates}
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H10N30/8542 4 {Alkali metal based oxides, e.g. lithium, sodium or potassium niobates}
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H10N30/8548 4 {Lead based oxides}
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H10N30/8554 5 {Lead zirconium titanate based}
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H10N30/8561 4 {Bismuth based oxides}
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H10N30/857 3 Macromolecular compositions
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H10N30/87 2 Electrodes or interconnections, e.g. leads or terminals
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H10N30/871 3 {Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes}
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H10N30/872 3 {Connection electrodes of multilayer piezoelectric or electrostrictive devices, e.g. external electrodes}
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H10N30/874 4 {embedded within piezoelectric or electrostrictive material, e.g. via connections}
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H10N30/875 3 {Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins}
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H10N30/877 3 {Conductive materials (in general H01B1/00)}
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H10N30/878 4 {the principal material being non-metallic, e.g. oxide or carbon based}
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H10N30/88 2 Mounts; Supports; Enclosures; Casings
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H10N30/883 3 {Further insulation means against electrical, physical or chemical damage, e.g. protective coatings}
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H10N30/886 3 {Mechanical prestressing means, e.g. springs (springs in general F16F1/00)}
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H10N35/00 0 Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00)
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H10N35/85 2 Magnetostrictive active materials
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H10N39/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
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H10N50/00 0 Galvanomagnetic devices (Hall-effect devices H10N52/00; integrated devices or assemblies of multiple devices H10N59/00)
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H10N50/10 1 Magnetoresistive devices
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H10N50/20 1 Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10)
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H10N50/85 2 Magnetic active materials
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H10N52/101 1 {Semiconductor Hall-effect devices}
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H10N52/85 2 Magnetic active materials
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H10N59/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00)
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H10N60/00 0 Superconducting devices (integrated devices or assemblies of multiple devices H10N69/00)
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H10N60/0128 2 {of composite superconductor filaments (comprising copper oxide H10N60/0268)}
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H10N60/0156 2 {of devices comprising Nb or an alloy of Nb with one or more of the elements of group 4, e.g. Ti, Zr, Hf}
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H10N60/0184 2 {of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn}
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H10N60/0212 2 {of devices comprising molybdenum chalcogenides}
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H10N60/0241 2 {of devices comprising nitrides or carbonitrides}
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H10N60/0268 2 {of devices comprising copper oxide}
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H10N60/0296 3 {Processes for depositing or forming superconductor layers}
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H10N60/0324 4 {from a solution}
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H10N60/0352 4 {from a suspension or slurry, e.g. screen printing; doctor blade casting}
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H10N60/0381 4 {by evaporation independent of heat source, e.g. MBE}
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H10N60/0408 4 {by sputtering}
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H10N60/0436 4 {by chemical vapour deposition [CVD]}
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H10N60/0464 5 {by metalloorganic chemical vapour deposition [MOCVD]}
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H10N60/0492 4 {by thermal spraying, e.g. plasma deposition}
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H10N60/0521 4 {by pulsed laser deposition, e.g. laser sputtering; laser ablation}
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H10N60/0548 4 {by precursor deposition followed by after-treatment, e.g. oxidation}
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H10N60/0604 5 {Monocrystalline substrates, e.g. epitaxial growth}
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H10N60/0632 5 {Intermediate layers, e.g. for growth control}
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H10N60/0661 3 {After-treatment, e.g. patterning}
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H10N60/0688 4 {Etching}
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H10N60/0744 3 {Manufacture or deposition of contacts or electrodes}
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H10N60/0772 3 {Processes including the use of precursors}
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H10N60/0801 3 {Processes peculiar to the manufacture or treatment of filaments or composite wires}
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H10N60/0828 3 {Introducing flux pinning centres}
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H10N60/0856 2 {of devices comprising metal borides, e.g. MgB2}
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H10N60/0884 2 {Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam, X-rays (irradiation devices G21K, H01J)}
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H10N60/0912 2 {of Josephson-effect devices}
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H10N60/0941 3 {comprising high-Tc ceramic materials}
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H10N60/10 1 Junction-based devices
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H10N60/11 2 {Single electron tunnelling devices}
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H10N60/12 2 Josephson-effect devices
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H10N60/124 3 {comprising high-Tc ceramic materials}
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H10N60/126 3 {comprising metal borides, e.g. MgB2}
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H10N60/128 2 {having three or more electrodes, e.g. transistor-like structures}
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H10N60/20 1 Permanent superconducting devices
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H10N60/202 2 {comprising metal borides, e.g. MgB2}
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H10N60/203 2 {comprising high-Tc ceramic materials}
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H10N60/205 2 {having three or more electrodes, e.g. transistor-like structures (H10N60/128 takes precedence)}
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H10N60/30 1 Devices switchable between superconducting and normal states
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H10N60/805 2 {for Josephson-effect devices}
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H10N60/81 2 Containers; Mountings
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H10N60/815 3 {for Josephson-effect devices}
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H10N60/82 2 Current path
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H10N60/83 2 Element shape
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H10N60/84 2 Switching means for devices switchable between superconducting and normal states
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H10N60/85 2 Superconducting active materials
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H10N60/851 3 {Organic materials}
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H10N60/853 4 {Fullerene superconductors, e.g. soccerball-shaped allotrope of carbon, e.g. C60, C94 (fullerenes in general C07C13/00)}
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H10N60/855 3 {Ceramic materials}
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H10N60/857 4 {comprising copper oxide}
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H10N60/858 5 {Multi-layered structures, e.g. superlattices}
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H10N60/99 1 {Alleged superconductivity}
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H10N69/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
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H10N70/00 0 Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N79/00)
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H10N70/011 1 {Manufacture or treatment of multistable switching devices}
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H10N70/021 2 {Formation of the switching material, e.g. layer deposition}
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H10N70/023 3 {by chemical vapor deposition, e.g. MOCVD, ALD}
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H10N70/026 3 {by physical vapor deposition, e.g. sputtering}
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H10N70/028 3 {by conversion of electrode material, e.g. oxidation}
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H10N70/041 2 {Modification of the switching material, e.g. post-treatment, doping}
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H10N70/043 3 {by implantation}
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H10N70/046 3 {by diffusion, e.g. photo-dissolution}
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H10N70/061 2 {Patterning of the switching material}
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H10N70/063 3 {by etching of pre-deposited switching material layers, e.g. lithography}
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H10N70/066 3 {by filling of openings, e.g. damascene method}
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H10N70/068 3 {by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers}
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H10N70/10 1 Solid-state travelling-wave devices
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H10N70/151 1 {Charge density wave transport devices}
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H10N70/20 1 Multistable switching devices, e.g. memristors
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H10N70/231 2 {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
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H10N70/235 3 {between different crystalline phases, e.g. cubic and hexagonal}
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H10N70/24 2 {based on migration or redistribution of ionic species, e.g. anions, vacancies}
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H10N70/245 3 {the species being metal cations, e.g. programmable metallization cells}
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H10N70/25 2 {based on bulk electronic defects, e.g. trapping of electrons}
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H10N70/253 2 {having three or more terminals, e.g. transistor-like devices}
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H10N70/257 2 {based on radiation or particle beam assisted switching, e.g. optically controlled devices}
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H10N70/801 1 {Constructional details of multistable switching devices}
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H10N70/821 2 {Device geometry}
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H10N70/823 3 {adapted for essentially horizontal current flow, e.g. bridge type devices}
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H10N70/826 3 {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
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H10N70/8265 4 {on sidewalls of dielectric structures, e.g. mesa or cup type devices}
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H10N70/828 3 {Current flow limiting means within the switching material region, e.g. constrictions}
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H10N70/841 2 {Electrodes}
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H10N70/8413 3 {adapted for resistive heating}
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H10N70/8416 3 {adapted for supplying ionic species}
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H10N70/8418 3 {adapted for focusing electric field or current, e.g. tip-shaped}
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H10N70/861 2 {Thermal details}
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H10N70/8613 3 {Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel}
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H10N70/8616 3 {Thermal insulation means}
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H10N70/881 2 {Switching materials}
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H10N70/882 3 {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides}
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H10N70/8822 4 {Sulfides, e.g. CuS}
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H10N70/8825 4 {Selenides, e.g. GeSe}
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H10N70/8828 4 {Tellurides, e.g. GeSbTe}
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H10N70/883 3 {Oxides or nitrides}
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H10N70/8833 4 {Binary metal oxides, e.g. TaOx}
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H10N70/8836 4 {Complex metal oxides, e.g. perovskites, spinels}
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H10N70/884 3 {Other compounds of groups 13-15, e.g. elemental or compound semiconductors}
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H10N70/8845 4 {Carbon or carbides}
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H10N79/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10)
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H10N80/00 0 Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N89/00)
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H10N80/01 1 {Manufacture or treatment}
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H10N80/10 1 Gunn-effect devices
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H10N80/103 2 {controlled by electromagnetic radiation}
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H10N80/107 2 {Gunn diodes}
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H10N89/00 0 Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N80/00
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H10N89/02 1 {Gunn-effect devices}
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H10N97/00 0 Electric solid-state thin-film or thick-film devices, not otherwise provided for
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H10N99/00 0 Subject matter not provided for in other groups of this subclass
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H10N99/03 1 {Devices using Mott metal-insulator transition, e.g. field effect transistors}
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H10N99/05 1 {Quantum devices, e.g. quantum interference devices, metal single electron transistors}
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H99 SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION
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H99Z SUBJECT MATTER NOT OTHERWISE PROVIDED FOR IN THIS SECTION
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H99Z99/00 0 Subject matter not otherwise provided for in this section
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