H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNERGENERATION OF NOISE BY SUCH CIRCUITS measuring, testing G01R; generators adapted for electrophonic musical instruments G10H; Speech synthesis G10L; masers, lasers H01S; dynamo-electric machines H02K; power inverter circuits H02M; by using pulse techniques H03K; automatic control of generators H03L; starting, synchronisation or stabilisation of generators where the type of generator is irrelevant or unspecified H03L; generation of oscillations in plasma H05HIn this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. H03B1/00 H03B1/00Details H03B1/02Structural details of power oscillators, e.g. for heating construction of transmitters H04B; features of generators for heating by electromagnetic fields H05B6/00 H03B1/04Reducing undesired oscillations, e.g. harmonics H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input H03B9/00, H03B15/00 take precedence H03B5/02Details H03B5/04Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature H03B5/06Modifications of generator to ensure starting of oscillations H03B5/08with frequency-determining element comprising lumped inductance and capacitance H03B5/10active element in amplifier being vacuum tube H03B5/14 takes precedence H03B5/12active element in amplifier being semiconductor device H03B5/14 takes precedence H03B5/1203the amplifier being a single transistor H03B5/1206using multiple transistors for amplification H03B5/1209the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair. H03B5/1215 takes precedence H03B5/1212the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair H03B5/1215the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair H03B5/1218the generator being of the balanced type H03B5/1221the amplifier comprising multiple amplification stages connected in cascade H03B5/1225the generator comprising multiple amplifiers connected in parallel H03B5/1228the amplifier comprising one or more field effect transistors H03B5/1231the amplifier comprising one or more bipolar transistors H03B5/1234and comprising means for varying the output amplitude of the generator H03B5/1278 takes precedence H03B5/1237comprising means for varying the frequency of the generator H03B5/124the means comprising a voltage dependent capacitance H03B5/1243the means comprising voltage variable capacitance diodes H03B5/1246the means comprising transistors used to provide a variable capacitance H03B5/125the transistors being bipolar transistors H03B5/1253the transistors being field-effect transistors H03B5/1256the means comprising a variable inductance H03B5/1259the means comprising a variable active inductor, e.g. gyrator circuits H03B5/1262the means comprising switched elements H03B5/1265switched capacitors H03B5/1268switched inductors H03B5/1271the frequency being controlled by a control current, i.e. current controlled oscillators H03B5/1275having further means for varying a parameter in dependence on the frequency H03B5/1278the parameter being an amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range H03B5/1281the parameter being the amount of feedback H03B5/1284the parameter being another frequency, e.g. a harmonic of the oscillating frequency H03B5/1287the parameter being a quality factor, e.g. Q factor of the frequency determining element H03B5/129the parameter being a bias voltage or a power supply H03B5/1293having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range H03B5/1296the feedback circuit comprising a transformer H03B5/14frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted H03B5/16active element in amplifier being vacuum tube H03B5/18with frequency-determining element comprising distributed inductance and capacitance H03B5/1805the frequency-determining element being a coaxial resonator H03B5/1811the active element in the amplifier being a vacuum tube see provisionally also H03B5/1835 H03B5/1817the frequency-determining element being a cavity resonator H03B5/1823the active element in the amplifier being a semiconductor device H03B5/1829the semiconductor device being a field-effect device H03B5/1835the active element in the amplifier being a vacuum tube H03B5/1841the frequency-determining element being a strip line resonator H03B5/1805, H03B5/1817, H03B5/1864 and H03B5/1882 take precedence H03B5/1847the active element in the amplifier being a semiconductor device H03B5/1852the semiconductor device being a field-effect device H03B5/1858the active element in the amplifier being a vacuum tube see provisionally also H03B5/1835 H03B5/1864the frequency-determining element being a dielectric resonator H03B5/187the active element in the amplifier being a semiconductor device H03B5/1876the semiconductor device being a field-effect device H03B5/1882the frequency-determining element being a magnetic-field sensitive resonator, e.g. a Yttrium Iron Garnet or a magnetostatic surface wave resonator H03B5/1888the active element in the amplifier being a semiconductor device H03B5/1894the semiconductor device being a field-effect device H03B5/20with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator H03B5/22active element in amplifier being vacuum tube H03B5/26 takes precedence H03B5/24active element in amplifier being semiconductor device H03B5/26 takes precedence H03B5/26frequency-determining element being part of bridge circuit in closed ring around which signal is transmittedfrequency-determining element being connected via a bridge circuit to such a closed ring, e.g. Wien-Bridge oscillator, parallel-T oscillator H03B5/28active element in amplifier being vacuum tube H03B5/30with frequency-determining element being electromechanical resonator H03B5/32being a piezo-electric resonator selection of piezo-electric material H10N30/00 H03B5/323the resonator having more than two terminals H03B5/326 takes precedence H03B5/326the resonator being an acoustic wave device, e.g. SAW or BAW device H03B5/34active element in amplifier being vacuum tube H03B5/38 takes precedence H03B5/36active element in amplifier being semiconductor device H03B5/323, H03B5/326 , H03B5/38 take precedence H03B5/362the amplifier being a single transistor H03B5/364 - H03B5/368 take precedence H03B5/364the amplifier comprising field effect transistors H03B5/366 takes precedence H03B5/366and comprising means for varying the frequency by a variable voltage or current H03B5/368the means being voltage variable capacitance diodes H03B5/38frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted H03B5/40being a magnetostrictive resonator H03B5/42 takes precedence; selection of magneto-strictive material H01F1/00; H10N30/00 H03B5/42frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes H03B9/00 takes precedence H03B7/02with frequency-determining element comprising lumped inductance and capacitance H03B7/04active element being vacuum tube H03B7/06active element being semiconductor device H03B7/08being a tunnel diode H03B7/10active element being gas-discharge or arc-discharge tube H03B7/12with frequency-determining element comprising distributed inductance and capacitance H03B7/14active element being semiconductor device H03B7/143and which comprises an element depending on a voltage or a magnetic field, e.g. varactor- YIG H03B7/146with several semiconductor devices H03B9/00Generation of oscillations using transit-time effects construction of tube and circuit arrangements not adapted to a particular application H01J; construction of the semiconductor devices H01L H03B9/01using discharge tubes H03B9/02using a retarding-field tube using klystrons H03B9/04 H03B9/04using a klystron H03B9/06using a reflex klystron H03B9/08using a travelling-wave tube H03B9/10using a magnetron H03B9/12using solid state devices, e.g. Gunn-effect devices H03B2009/123using Gunn diodes H03B2009/126using impact ionization avalanche transit time [IMPATT] diodes H03B9/14and elements comprising distributed inductance and capacitance H03B9/141and comprising a voltage sensitive element, e.g. varactor H03B9/142and comprising a magnetic field sensitive element, e.g. YIG H03B9/143using more than one solid state device H03B9/145the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity H03B9/141 - H03B9/143, H03B9/147, H03B9/148 take precedence H03B9/146formed by a disc, e.g. a waveguide cap resonator H03B9/147the frequency being determined by a stripline resonator H03B9/141 - H03B9/143, H03B9/148 take precedence H03B9/148the frequency being determined by a dielectric resonator H03B9/141 - H03B9/143 take precedence H03B11/00Generation of oscillations using a shock-excited tuned circuit with feedback H03B5/00 H03B11/02excited by spark spark gaps therefor H01T9/00 H03B11/04excited by interrupter H03B11/06by mechanical interrupter H03B11/08interrupter being discharge tube H03B11/10interrupter being semiconductor device H03B13/00Generation of oscillations using deflection of electron beam in a cathode-ray tube H03B15/00Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects H03B15/003using superconductivity effects devices using superconductivity H10N60/00 H03B15/006using spin transfer effects or giant magnetoresistance H03B17/00Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source transference of modulation from one carrier to another H03D7/00 H03B19/03using non-linear inductance H03B19/05using non-linear capacitance, e.g. varactor diodes H03B19/06by means of discharge device or semiconductor device with more than two electrodes H03B19/08by means of a discharge device H03B19/10using multiplication only H03B19/12using division only H03B19/14by means of a semiconductor device H03B19/16using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes H03B19/18and elements comprising distributed inductance and capacitance H03B19/20being diodes exhibiting charge storage or enhancement effects H03B21/00Generation of oscillations by combining unmodulated signals of different frequencies H03B19/00 takes precedence; frequency changing circuits in general H03D H03B21/01by beating unmodulated signals of different frequencies H03B21/02by plural beating, i.e. for frequency synthesis ; Beating in combination with multiplication or division of frequency digital frequency synthesis using a ROM G06F1/02; digital frequency synthesis in general H03K; indirect frequency synthesis using a PLL H03L7/16 H03B21/025by repeated mixing in combination with division of frequency only H03B21/04using several similar stages H03B23/00Generation of oscillations periodically swept over a predetermined frequency range angle-modulating circuits in general H03C3/00 H03B25/00Simultaneous generation by a free-running oscillator of oscillations having different frequencies H03B27/00Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs H03B28/00Generation of oscillations by methods not covered by groups H03B5/00 - H03B27/00, including modification of the waveform to produce sinusoidal oscillations analogue function generators for performing computing operations G06G7/26; use of transformers for conversion of waveform in ac-ac converters H02M5/18 H03B29/00Generation of noise currents and voltages gasfilled discharge tubes with solid cathode specially adapted as noise generators H01J17/005 H03B2200/00 H03B2200/00Indexing scheme relating to details of oscillators covered by H03B H03B2200/0002Types of oscillators H03B2200/0004Butler oscillator H03B2200/0006Clapp oscillator H03B2200/0008Colpitts oscillator H03B2200/001Hartley oscillator H03B2200/0012Pierce oscillator H03B2200/0014Structural aspects of oscillators H03B2200/0016including a ring, disk or loop shaped resonator H03B2200/0018relating to the cutting angle of a crystal, e.g. AT cut quartz H03B2200/002making use of ceramic material H03B2200/0022characterised by the substrate, e.g. material H03B2200/0024including parallel striplines H03B2200/0026relating to the pins of integrated circuits H03B2200/0028based on a monolithic microwave integrated circuit [MMIC] H03B2200/003Circuit elements of oscillators H03B2200/0032including a device with a Schottky junction H03B2200/0034including a buffer amplifier H03B2200/0036including an emitter or source coupled transistor pair or a long tail pair H03B2200/0038including a current mirror H03B2200/004including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor H03B2200/0042the capacitance diode being in the feedback path H03B2200/0044including optical elements, e.g. optical injection locking H03B2200/0046including measures to switch the gain of an amplifier H03B2200/0048including measures to switch the frequency band, e.g. by harmonic selection H03B2200/005including measures to switch a capacitor H03B2200/0052including measures to switch the feedback circuit H03B2200/0054including measures to switch a filter, e.g. for frequency tuning or for harmonic selection H03B2200/0056including a diode used for switching H03B2200/0058with particular transconductance characteristics, e.g. an operational transconductance amplifier H03B2200/006Functional aspects of oscillators H03B2200/0062Bias and operating point H03B2200/0064Pulse width, duty cycle or on/off ratio H03B2200/0066Amplitude or AM detection H03B2200/0068Frequency or FM detection H03B2200/007Generation of oscillations based on harmonic frequencies, e.g. overtone oscillators H03B2200/0072Frequency hopping and enabling of rapid frequency changes H03B2200/0074Locking of an oscillator by injecting an input signal directly into the oscillator H03B2200/0076Power combination of several oscillators oscillating at the same frequency H03B2200/0078generating or using signals in quadrature H03B2200/008making use of a reference frequency H03B2200/0082Lowering the supply voltage and saving power H03B2200/0084dedicated to Terahertz frequencies H03B2200/0086relating to the Q factor or damping of the resonant circuit H03B2200/0088Reduction of noise H03B2200/009Reduction of phase noise H03B2200/0092Measures to linearise or reduce distortion of oscillator characteristics H03B2200/0094Measures to ensure starting of oscillations H03B2200/0096Measures to ensure stopping of oscillations H03B2200/0098having a balanced output signal H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations H03B2201/01Varying the frequency of the oscillations by manual means H03B2201/011the means being an element with a variable capacitance H03B2201/012the means being an element with a variable inductance H03B2201/014the means being associated with an element comprising distributed inductances and capacitances H03B2201/015the element being a cavity H03B2201/017the element being a dielectric resonator H03B2201/018the means being a manual switch H03B2201/02Varying the frequency of the oscillations by electronic means H03B2201/0208the means being an element with a variable capacitance, e.g. capacitance diode H03B2201/0216the means being an element with a variable inductance H03B2201/0225the means being associated with an element comprising distributed inductances and capacitances H03B2201/0233the element being a cavity H03B2201/0241the element being a magnetically variable element, e.g. an Yttrium Iron Garnet H03B2201/025the means being an electronic switch for switching in or out oscillator elements H03B2201/0258the means comprising a diode H03B2201/0266the means comprising a transistor H03B2201/0275the means delivering several selected voltages or currents H03B2201/0283the means functioning digitally H03B2201/0291and being controlled by a processing device, e.g. a microprocessor H03B2201/03Varying beside the frequency also another parameter of the oscillator in dependence on the frequency H03B2201/031the parameter being the amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range H03B2201/033the parameter being the amount of feedback H03B2201/035the parameter being another frequency, e.g. a harmonic of the oscillating frequency H03B2201/036the parameter being the quality factor of a resonator H03B2201/038the parameter being a bias voltage or a power supply H03B2202/00Aspects of oscillators relating to reduction of undesired oscillations H03B2202/01Reduction of undesired oscillations originated from distortion in one of the circuit elements of the oscillator H03B2202/012the circuit element being the active device H03B2202/015the circuit element being a limiter H03B2202/017the circuit element being a frequency determining element H03B2202/02Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator H03B2202/022the noise being essentially white noise, i.e. frequency independent noise H03B2202/025the noise being coloured noise, i.e. frequency dependent noise H03B2202/027the noise being essentially proportional to the inverse of the frequency, i.e. the so-called 1/f noise H03B2202/03Reduction of undesired oscillations originated from internal parasitic couplings, i.e. parasitic couplings within the oscillator itself H03B2202/04Reduction of undesired oscillations originated from outside noise or interferences, e.g. from parasitic couplings with circuit elements outside the oscillator H03B2202/042the circuit element belonging to the power supply H03B2202/044the circuit element belonging to transmitter circuitry H03B2202/046the circuit element belonging to receiver circuitry H03B2202/048the circuit element being a frequency divider H03B2202/05Reduction of undesired oscillations through filtering or through special resonator characteristics H03B2202/06Reduction of undesired oscillations through modification of a bias voltage, e.g. selecting the operation point of an active device H03B2202/07Reduction of undesired oscillations through a cancelling of the undesired oscillation H03B2202/073by modifying the internal feedback of the oscillator H03B2202/076by using a feedback loop external to the oscillator, e.g. the so-called noise degeneration H03B2202/08Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator H03B2202/082by avoiding coupling between these circuit elements H03B2202/084through shielding H03B2202/086through a frequency dependent coupling, e.g. which attenuates a certain frequency range H03B2202/088by compensating through additional couplings with these circuit elements