H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHTDEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL This subclass covers: devices using the stimulated emission of radiation by excited atoms or molecules to amplify or generate coherent monochromatic electromagnetic radiation;functions as modulating, demodulating, controlling or stabilising such coherent monochromatic electromagnetic radiation.In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. H01S1/00 H01S1/00Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range H01S1/005using a relativistic beam of charged particles, e.g. electron cyclotron maser, gyrotron H01S1/02solid H01S1/04liquid H01S1/06Gaseous , i.e. beam masers H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range semiconductors lasers H01S5/00 H01S3/0007Applications not otherwise provided for working metals or other materials by laser beam B23K26/00; using photons to produce a reactive propulsive thrust F03H3/00; optical recording of measured values in general G01D15/14; optics in general G02B; holographic processes or apparatus G03H; optical marking or sensing of data record carriers G06K7/10 - G06K7/14, G06K15/12; injection heating of plasma by laser H05H1/22; acceleration of neutral particles by electromagnetic wave pressure H05H3/04 H01S3/0014Monitoring arrangements not otherwise provided for photometry G01J1/00, e.g. G01J1/4257; radiation pyrometry G01J5/00; measuring coherence of light G01J9/00; measuring wavelength of light G01J9/00, e.g. G01J9/0246; measuring optical pulses G01J11/00; calorimetrically measuring power of laser beams G01K17/003 H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B H01S3/0057Temporal shaping, e.g. pulse compression, frequency chirping soliton generation and propagation G02F1/3513, H01S3/063 and H01S3/108 H01S3/0064Anti-reflection devices, e.g. optical isolaters absorbing layers for marking or protecting purposes in laser working B23K26/50; magneto-optical non-reciprocal devices G02F1/093, G02F1/0955 H01S3/0071Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction H01S3/0078Frequency filtering H01S3/0085Modulating the output, i.e. the laser beam is modulated outside the laser cavity H01S3/0092Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity nonlinear frequency conversion per se G02F1/35 H01S3/02Constructional details housings or packages of fibre lasers H01S3/06704 H01S3/022of liquid lasers H01S3/025of solid state lasers, e.g. housings or mountings H01S3/027comprising a special atmosphere inside the housing H01S3/03of gas laser discharge tubes H01S3/0305Selection of materials for the tube or the coatings thereon H01S3/031Metal vapour lasers, e.g. metal vapour generation H01S3/0315Waveguide lasers H01S3/032for confinement of the discharge, e.g. by special features of the discharge constricting tube H01S3/0323by special features of the discharge constricting tube, e.g. capillary H01S3/0326by an electromagnetic field H01S3/034Optical devices within, or forming part of, the tube, e.g. windows, mirrors reflectors having variable properties or positions for initial adjustment of the resonator H01S3/086 H01S3/0343Aerodynamic windows H01S3/0346Protection of windows or mirrors against deleterious effects cooling arrangements H01S3/0401 H01S3/036Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishingMeans for circulating the gas, e.g. for equalising the pressure within the tube H01S3/031 takes precedence H01S3/038Electrodes, e.g. special shape, configuration or composition H01S3/0381Anodes or particular adaptations thereof H01S3/0382Cathodes or particular adaptations thereof H01S3/0384Auxiliary electrodes, e.g. for pre-ionisation or triggering, or particular adaptations therefor H01S3/0385Shape H01S3/0387Helical shape H01S3/0388Compositions, materials or coatings H01S3/04Arrangements for thermal management H01S3/0401of optical elements being part of laser resonator, e.g. windows, mirrors, lenses H01S3/0402for liquid lasers H01S3/0404Air- or gas cooling, e.g. by dry nitrogen H01S3/0405Conductive cooling, e.g. by heat sinks or thermo-electric elements H01S3/0407Liquid cooling, e.g. by water H01S3/0408Radiative cooling, e.g. by anti-Stokes scattering in the active medium H01S3/041for gas lasers H01S3/0401 takes precedence H01S3/042for solid state lasers H01S3/0401 takes precedence H01S3/05Construction or shape of optical resonatorsAccommodation of active medium thereinShape of active medium H01S3/06Construction or shape of active medium H01S3/0602Crystal lasers or glass lasers H01S3/063 takes precedence H01S3/0604in the form of a plate or disc H01S3/0606with polygonal cross-section, e.g. slab, prism H01S3/0604 takes precedence H01S3/0608Laser crystal with a hole, e.g. a hole or bore for housing a flashlamp or a mirror H01S3/061with elliptical or circular cross-section and elongated shape, e.g. rod H01S3/0612Non-homogeneous structure H01S3/07 takes precedence H01S3/0615Shape of end-face H01S3/0617having a varying composition or cross-section in a specific direction H01S3/0619Coatings, e.g. AR, HR, passivation layer H01S3/0621Coatings on the end-faces, e.g. input/output surfaces of the laser light H01S3/0623Antireflective [AR] H01S3/0625Coatings on surfaces other than the end-faces H01S3/0627the resonator being monolithic, e.g. microlaser H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength waveguide gas lasers H01S3/0315 H01S3/0632Thin film lasers in which light propagates in the plane of the thin film H01S3/0635provided with a periodic structure, e.g. using distributed feed-back, grating couplers controlling, e.g. modulating distributed feed-back lasers H01S3/102 H01S3/0637Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO₂) H01S3/067Fibre lasers H01S3/06704Housings; Packages H01S3/06708Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering optical fibres as passive waveguides G02B6/02 H01S3/06712Polarising fibre; Polariser H01S3/06716Fibre compositions per se C03C13/04or doping with active elements lasing materials in general H01S3/14 H01S3/0672Non-uniform radial doping H01S3/06725Fibre characterized by a specific dispersion, e.g. for pulse shaping in soliton lasers or for dispersion compensating [DCF] H01S3/06729Peculiar transverse fibre profile H01S3/06733Fibre having more than one cladding H01S3/06737Fibre having multiple non-coaxial cores, e.g. multiple active cores or separate cores for pump and gain H01S3/06741Photonic crystal fibre, i.e. the fibre having a photonic bandgap H01S3/06745Tapering of the fibre, core or active region H01S3/0675Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers H01S3/06754Fibre amplifiers H01S3/06708 takes precedence H01S3/06758Tandem amplifiers H01S3/06762having a specific amplification band H01S3/06766C-band amplifiers, i.e. amplification in the range of about 1530 nm to 1560 nm H01S3/0677L-band amplifiers, i.e. amplification in the range of about 1560 nm to 1610 nm H01S3/06775S-band amplifiers, i.e. amplification in the range of about 1450 nm to 1530 nm H01S3/06779with optical power limiting H01S3/06783Amplifying coupler H01S3/06787Bidirectional amplifier H01S3/06791Fibre ring lasers fibre laser gyrometers G01C19/72 H01S3/06795with superfluorescent emission, e.g. amplified spontaneous emission sources for fibre laser gyrometers fibre laser gyrometers per se G01C19/72 H01S3/07consisting of a plurality of parts, e.g. segments H01S3/067 takes precedence H01S3/073Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers tandem arrangements of separate gas lasers H01S3/2366 H01S3/076Folded-path lasers H01S3/08Construction or shape of optical resonators or components thereof H01S3/08004incorporating a dispersive element, e.g. a prism for wavelength selection H01S3/0811, H01S3/08022 take precedence H01S3/08009using a diffraction grating H01S3/08013Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate the active medium being a fibre H01S3/067 H01S3/08018Mode suppression H01S3/08022Longitudinal modes mode suppression using a plurality of resonators H01S3/082 H01S3/08027by a filter, e.g. a Fabry-Perot filter is used for wavelength setting H01S3/08031Single-mode emission H01S3/08036using intracavity dispersive, polarising or birefringent elements H01S3/0804Transverse or lateral modes H01S3/08045Single-mode emission H01S3/0805by apertures, e.g. pin-holes or knife-edges H01S3/08054Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation quarter-wave plates in a Q-switch laser H01S3/1124, H01S3/115 H01S3/08059Constructional details of the reflector, e.g. shape mirrors in general G02B5/08; mountings for mirrors G02B7/18 H01S3/08063Graded reflectivity, e.g. variable reflectivity mirror H01S3/08068Holes; Stepped surface; Special cross-section H01S3/08072Thermal lensing or thermally induced birefringence; Compensation thereof H01S3/08077Pump induced waveguiding, i.e. the pump induces refractive index change in the laser medium to guide the amplified light, e.g. gain- or loss- guiding or thermally induced refractive index change H01S3/08081Unstable resonators H01S3/08086Multiple-wavelength emission H01S3/0809Two-wavelenghth emission H01S3/08095Zig-zag travelling beam through the active medium H01S3/081comprising three or more reflectors H01S3/0811incorporating a dispersive element, e.g. a prism for wavelength selection H01S3/0812using a diffraction grating H01S3/0813Configuration of resonator H01S3/0815having 3 reflectors, e.g. V-shaped resonators H01S3/0816having 4 reflectors, e.g. Z-shaped resonators H01S3/0817having 5 reflectors, e.g. W-shaped resonators H01S3/0818Unstable resonators H01S3/082defining a plurality of resonators, e.g. for mode selection or suppression H01S3/0823incorporating a dispersive element, e.g. a prism for wavelength selection H01S3/0826using a diffraction grating H01S3/083Ring lasers fibre ring lasers H01S3/06791 H01S3/0835Gas ring lasers H01S3/086One or more reflectors having variable properties or positions for initial adjustment of the resonator varying a parameter of the laser output during operation H01S3/10; stabilisation of the laser output H01S3/13 H01S3/09Processes or apparatus for excitation, e.g. pumping H01S3/0903Free-electron laser H01S3/0906Electrical, electrochemical, or electron-beam pumping of a dye laser H01S3/091using optical pumping H01S3/0912Electronics or drivers for the pump source, i.e. details of drivers or circuitry specific for laser pumping laser diode drivers H01S5/042 H01S3/0915by incoherent light H01S3/09155by cathodo-luminescence H01S3/092of flash lamp H01S3/0937 takes precedence ; flash lamps per se H01J61/80; circuit arrangements for operating flash lamps in general H05B41/30 H01S3/093focusing or directing the excitation energy into the active medium H01S3/0931Imaging pump cavity, e.g. elliptical H01S3/0933of a semiconductor, e.g. light emitting diode H01S3/0937produced by exploding or combustible material H01S3/094by coherent light Groups H01S3/094003 - H01S3/094088 take precedence over groups H01S3/0941 - H01S3/0947 H01S3/094003the pumped medium being a fibre H01S3/094007Cladding pumping, i.e. pump light propagating in a clad surrounding the active core H01S3/094011with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre H01S3/094015with pump light recycling, i.e. with reinjection of the unused pump light back into the fiber, e.g. by reflectors or circulators H01S3/094019Side pumped fibre, whereby pump light is coupled laterally into the fibre via an optical component like a prism, or a grating, or via V-groove coupling H01S3/094023with ASE light recycling, with reinjection of the ASE light back into the fiber, e.g. by reflectors or circulators H01S3/094026for synchronously pumping, e.g. for mode locking H01S3/09403Cross-pumping, e.g. Förster process involving intermediate medium for excitation transfer H01S3/094034the pumped medium being a dye H01S3/094038End pumping H01S3/094042of a fibre laser H01S3/094046of a Raman fibre laser H01S3/094049Guiding of the pump light H01S3/094053Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle H01S3/094057by tapered duct or homogenized light pipe, e.g. for concentrating pump light H01S3/094061Shared pump, i.e. pump light of a single pump source is used to pump plural gain media in parallel H01S3/094065Single-mode pumping H01S3/094069Multi-mode pumping H01S3/094073Non-polarized pump, e.g. depolarizing the pump light for Raman lasers H01S3/094076Pulsed or modulated pumping H01S3/1024 takes precedence H01S3/09408Pump redundancy H01S3/094084with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators H01S3/094088with ASE light recycling, i.e. with reinjection of the ASE light, e.g. by reflectors or circulators H01S3/094092Upconversion pumping H01S3/094096Multi-wavelength pumping H01S3/0941of a laser diode H01S3/09415the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping H01S3/0943of a gas laser H01S3/0947of an organic dye laser H01S3/095using chemical or thermal pumping H01S3/09505involving photochemical reactions, e.g. photodissociation iodine lasers H01S3/2215 H01S3/0951by increasing the pressure in the laser gas medium H01S3/0953Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds H01S3/0955using pumping by high energy particles H01S3/0903, H01S3/0906, H01S3/09707 take precedence H01S3/0957by high energy nuclear particles H01S3/0959by an electron beam H01S3/097by gas discharge of a gas laser H01S3/09702Details of the driver electronics and electric discharge circuits H01S3/09705with particular means for stabilising the discharge H01S3/09707using an electron or ion beam free-electron laser H01S3/0903 H01S3/0971transversely excited H01S3/0975 takes precedence H01S3/09713with auxiliary ionisation, e.g. double discharge excitation H01S3/09716by ionising radiation H01S3/0973having a travelling wave passing through the active medium H01S3/0975using inductive or capacitive excitation H01S3/0977having auxiliary ionisation means H01S3/09713 takes precedence H01S3/09775by ionising radiation H01S3/0979Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating Group H01S3/10007 takes precedence over groups H01S3/102 - H01S3/104 H01S3/10007in optical amplifiers H01S3/1001by controlling the optical pumping H01S3/10013by controlling the temperature of the active medium H01S3/10015by monitoring or controlling, e.g. attenuating, the input signal H01S3/10023by functional association of additional optical elements, e.g. filters, gratings, reflectors H01S3/1003tunable optical elements, e.g. acousto-optic filters, tunable gratings H01S3/10038Amplitude control H01S3/10046Pulse repetition rate control H01S3/11 takes precedence H01S3/10053Phase control H01S3/10061Polarization control H01S3/10069Memorized or pre-programmed characteristics, e.g. look-up table [LUT] H01S3/10076using optical phase conjugation, e.g. phase conjugate reflection H01S3/10084Frequency control by seeding H01S3/10092Coherent seed, e.g. injection locking H01S3/101Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted H01S3/102by controlling the active medium, e.g. by controlling the processes or apparatus for excitation H01S3/13 takes precedence H01S3/1022by controlling the optical pumping H01S3/1024for pulse generation H01S3/1026Controlling the active medium by translation or rotation, e.g. to remove heat from that part of the active medium that is situated on the resonator axis H01S3/1028by controlling the temperature H01S3/104in gas lasers H01S3/105by controlling the mutual position or the reflecting properties of the reflectors of the cavity , e.g. by controlling the cavity lengthH01S3/10076, H01S3/13 take precedence H01S3/1051one of the reflectors being of the type using frustrated reflection H01S3/1053Control by pressure or deformation H01S3/1055one of the reflectors being constituted by a diffraction grating H01S3/106by controlling devices placed within the cavity H01S3/10076, H01S3/13 take precedence H01S3/1061using a variable absorption device H01S3/1062using a controlled passive interferometer, e.g. a Fabry-Perot etalon H01S3/1063using a solid state device provided with at least one potential jump barrier H01S3/1065using liquid crystals H01S3/1066using a magneto-optical device H01S3/1067using pressure or deformation H01S3/1068using an acousto-optical device H01S3/107using electro-optic devices, e.g. exhibiting Pockels or Kerr effect H01S3/1061, H01S3/1063, H01S3/1065 take precedence H01S3/1075for optical deflection H01S3/108using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering mode locking using a non-linear element H01S3/1112 H01S3/1083using parametric generation H01S3/1086using scattering effects, e.g. Raman or Brillouin effect H01S3/109Frequency multiplication, e.g. harmonic generation H01S3/1095self doubling, e.g. lasing and frequency doubling by the same active medium H01S3/11Mode lockingQ-switchingOther giant-pulse techniques, e.g. cavity dumpingGroup H01S3/11 is impacted by reclassification into group H01S3/1123.
Groups H01S3/11 and H01S3/1123 should be considered in order to perform a complete search. H01S3/1103Cavity dumping H01S3/1106Mode locking H01S3/1109Active mode locking H01S3/1112Passive mode locking H01S3/1115using intracavity saturable absorbers H01S3/1118Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based H01S3/1121Harmonically mode locking lasers, e.g. modulation frequency equals multiple integers or a fraction of the resonator roundtrip time H01S3/1123Q-switchingGroup H01S3/1123 is incomplete pending reclassification of documents from group H01S3/11.
Groups H01S3/11 and H01S3/1123 should be considered in order to perform a complete search. H01S3/1124using magneto-optical devices H01S3/1127using pulse transmission mode [PTM] H01S3/113using intracavity saturable absorbers H01S3/115using intracavity electro-optic devices H01S3/117using intracavity acousto-optic devices H01S3/121using intracavity mechanical devices H01S3/123using rotating mirrors H01S3/125using rotating prisms H01S3/127Plural Q-switches H01S3/13Stabilisation of laser output parameters, e.g. frequency or amplitude Group H01S3/1301 takes precedence over groups H01S3/131 - H01S3/134 H01S3/1301in optical amplifiers H01S3/13013by controlling the optical pumping H01S3/13017by controlling the temperature of the active medium H01S3/1302by all-optical means, e.g. gain-clamping H01S3/1303by using a passive reference, e.g. absorption cell H01S3/139 takes precedence H01S3/1304by using an active reference, e.g. second laser, klystron or other standard frequency source H01S3/139 takes precedence; automatic control of electronic generators H03L7/00 H01S3/1305Feedback control systems H01S3/1306Stabilisation of the amplitude H01S3/1307Stabilisation of the phase H01S3/1308Stabilisation of the polarisation H01S3/131by controlling the active medium, e.g. by controlling the processes or apparatus for excitation H01S3/1312by controlling the optical pumping H01S3/1315by gain saturation H01S3/1317by controlling the temperature H01S3/134in gas lasers H01S3/136by controlling devices placed within the cavity H01S3/137for stabilising of frequency H01S3/139by controlling the mutual position or the reflecting properties of the reflectors of the cavity , e.g. by controlling the cavity length H01S3/1392by using a passive reference, e.g. absorption cell H01S3/1396, H01S3/1398 take precedence H01S3/1394by using an active reference, e.g. second laser, klystron or other standard frequency source H01S3/1396by using two modes present, e.g. Zeeman splitting H01S3/1398 takes precedence H01S3/1398by using a supplementary modulation of the output H01S3/14characterised by the material used as the active medium H01S3/16Solid materials H01S3/1601characterised by an active (lasing) ion H01S3/1603rare earth H01S3/1605terbium H01S3/1606dysprosium H01S3/1608erbium H01S3/161holmium H01S3/1611neodymium H01S3/1613praseodymium H01S3/1615samarium H01S3/1616thulium H01S3/1618ytterbium H01S3/162transition metal H01S3/1621cobalt H01S3/1623chromium, e.g. Alexandrite H01S3/1625titanium H01S3/1626uranium H01S3/1628characterised by a semiconducting matrix H01S3/163characterised by a crystal matrix H01S3/1631aluminate H01S3/1633BeAl₂O₄, i.e. Chrysoberyl H01S3/1635LaMgAl₁₁O₁₉ (LNA, Lanthanum Magnesium Hexaluminate) H01S3/1636Al₂O₃ (Sapphire) H01S3/1638YAlO₃ (YALO or YAP, Yttrium Aluminium Perovskite) H01S3/164garnet H01S3/1641GGG H01S3/1643YAG H01S3/1645halide H01S3/1646BaY₂F₈ H01S3/1648with the formula XYZF6 (Colquiriite structure), wherein X is Li, Na, K or Rb, Y is Mg, Ca, Sr, Cd or Ba and Z is Al, Sc or Ga H01S3/165with the formula MF2, wherein M is Ca, Sr or Ba H01S3/1651SrAlF₅ H01S3/1653YLiF₄(YLF, LYF) H01S3/1655silicate H01S3/1656BeAl₂(SiO₃)₆ H01S3/1658Mg₂SiO₄ (Forsterite) H01S3/166La₃Ga₅SiO₁₄ [LGS] H01S3/1661Y₂SiO₅ [YSO] H01S3/1663beryllate H01S3/1665La₂Be₂O₅ [BEL] H01S3/1666borate, carbonate, arsenide H01S3/1668scandate H01S3/167Sc₂O₃ H01S3/1671vanadate, niobate, tantalate H01S3/1673YVO₄ [YVO] H01S3/1675titanate, germanate, molybdate, tungstate H01S3/1676Li₄Ge₅O₁₂ H01S3/1678LaBGeO₅ H01S3/168using an organic dye dispersed in a solid matrix H01S3/1681using colour centres H01S3/1683using superconductivity, e.g. provided with Josephson junctions H01S3/1685Ceramics H01S3/1686Liquid crystal active layer H01S3/1688Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant H01S3/169Nanoparticles, e.g. doped nanoparticles acting as a gain material H01S3/1691characterised by additives / sensitisers / promoters as further dopants H01S3/1693aluminium H01S3/1695germanium H01S3/1696transition metal H01S3/1698rare earth H01S3/17amorphous, e.g. glass H01S3/171chalcogenide glass H01S3/172selenide glass H01S3/173fluoride glass, e.g. fluorozirconate or ZBLAN [ ZrF₄-BaF₂-LaF₃-AlF₃-NaF] H01S3/175phosphate glass H01S3/176silica or silicate glass H01S3/177telluride glass H01S3/178plastic H01S3/20Liquids H01S3/207including a chelate , e.g. including atoms or ions, e.g. Nd H01S3/213including an organic dye H01S3/22Gases H01S3/2207Noble gas ions, e.g. Ar+>, Kr+> H01S3/2215Iodine compounds or atomic iodine H01S3/2222Neon, e.g. in helium-neon (He-Ne) systems H01S3/223the active gas being polyatomic, i.e. containing two or more atoms H01S3/227 takes precedence H01S3/2232Carbon dioxide (CO₂) or monoxide [CO] H01S3/2235Dye vapour H01S3/2237Molecular nitrogen (N₂), e.g. in noble gas-N₂ systems H01S3/225comprising an excimer or exciplex H01S3/2251ArF, i.e. argon fluoride is comprised for lasing around 193 nm H01S3/2253XeCl, i.e. xenon chloride is comprised for lasing around 308 nm H01S3/2255XeF, i.e. xenon fluoride is comprised for lasing around 351 nm H01S3/2256KrF, i.e. krypton fluoride is comprised for lasing around 248 nm H01S3/2258F2, i.e. molecular fluoride is comprised for lasing around 157 nm H01S3/227Metal vapour H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media H01S3/2308Amplifier arrangements, e.g. MOPA H01S3/2316Cascaded amplifiers H01S3/2325Multi-pass amplifiers, e.g. regenerative amplifiers H01S3/2333Double-pass amplifiers H01S3/2341Four pass amplifiers H01S3/235Regenerative amplifiers H01S3/2358comprising dyes as the active medium H01S3/2366comprising a gas as the active medium H01S3/10092, H01S3/2383 take precedence H01S3/2375Hybrid lasers H01S3/07 takes precedence H01S3/2383Parallel arrangements H01S3/2391emitting at different wavelengths H01S3/30using scattering effects, e.g. stimulated Brillouin or Raman effects H01S3/302in an optical fibre H01S3/305in a gas H01S3/307in a liquid H01S4/00Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers H01S5/00Semiconductor lasers superluminescent diodes H01L33/00 Attention is drawn to Special Rules of classification at C07F, which Special Rules indicate to which version of the periodic table of chemical elements CPC refers. In this group, the Periodic System used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder. H01S5/0014Measuring characteristics or properties thereof measuring techniques per se G01J, G01K, G01N, G01R H01S5/0021Degradation or life time measurements H01S5/0028Laser diodes used as detectors H01S5/0035Simulations of laser characteristics H01S5/0042On wafer testing, e.g. lasers are tested before separating wafer into chips H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence H01S5/0057for temporal shaping, e.g. pulse compression, frequency chirping H01S5/0064Anti-reflection components, e.g. optical isolators H01S5/0071for beam steering, e.g. using a mirror outside the cavity to change the beam direction H01S5/0078for frequency filtering H01S5/0085for modulating the output, i.e. the laser beam is modulated outside the laser cavity H01S5/0087for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials H01S5/0092for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity H01S5/02Structural details or components not essential to laser action H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth H01S5/0202Cleaving H01S5/0203Etching H01S5/0205during growth of the semiconductor body H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding; specific crystal orientation H01S5/3202 H01S5/0207Substrates having a special shape H01S5/0208Semi-insulating substrates H01S5/021Silicon based substrates H01S5/0211Substrates made of ternary or quaternary compounds H01S5/0212with a graded composition H01S5/0213Sapphire, quartz or diamond based substrates H01S5/0215Bonding to the substrate H01S5/0216using an intermediate compound, e.g. a glue or solder H01S5/0217Removal of the substrate H01S5/0218Substrates comprising semiconducting materials from different groups of the periodic system than the active layer H01S5/022MountingsHousingsGroup H01S5/022 is impacted by reclassification into groups H01S5/02218 and H01S5/0239.
Groups H01S5/022, H01S5/02218, and H01S5/0239 should be considered in order to perform a complete search. H01S5/02208characterised by the shape of the housings H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis H01S5/02216Butterfly-type, i.e. with electrode pins extending horizontally from the housings H01S5/02218Material of the housingsFilling of the housingsGroup H01S5/02218 is incomplete pending reclassification of documents from group H01S5/022.
Groups H01S5/022 and H01S5/02218 should be considered in order to perform a complete search. H01S5/0222Gas-filled housings H01S5/02224the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets H01S5/02232Liquid-filled housings H01S5/02234Resin-filled housingsthe housings being made of resin H01S5/02235Getter material for absorbing contamination H01S5/0225Out-coupling of light H01S5/02251using optical fibres H01S5/02253using lenses H01S5/02255using beam deflecting elements H01S5/02257using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing H01S5/023Mount members, e.g. sub-mount membersGroup H01S5/023 is impacted by reclassification into group H01S5/02315.
Groups H01S5/023 and H01S5/02315 should be considered in order to perform a complete search. H01S5/0231StemsGroup H01S5/0231 is impacted by reclassification into group H01S5/0232.
Groups H01S5/0231 and H01S5/0232 should be considered in order to perform a complete search. H01S5/02315Support members, e.g. bases or carriersGroup H01S5/02315 is incomplete pending reclassification of documents from group H01S5/023.
Groups H01S5/023 and H01S5/02315 should be considered in order to perform a complete search. H01S5/0232Lead-framesGroup H01S5/0232 is incomplete pending reclassification of documents from group H01S5/0231.
Groups H01S5/0231 and H01S5/0232 should be considered in order to perform a complete search. H01S5/02325Mechanically integrated components on mount members or optical micro-benches H01S5/02326Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses H01S5/0233Mounting configuration of laser chipsGroup H01S5/0233 is impacted by reclassification into group H01S5/02335.
Groups H01S5/0233 and H01S5/02335 should be considered in order to perform a complete search. H01S5/02335Up-side up mountings, e.g. epi-side up mountings or junction up mountingsGroup H01S5/02335 is incomplete pending reclassification of documents from group H01S5/0233.
Groups H01S5/0233 and H01S5/02335 should be considered in order to perform a complete search. H01S5/0234Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings H01S5/02345Wire-bonding H01S5/0235Method for mounting laser chips H01S5/02355Fixing laser chips on mounts H01S5/0236using an adhesive H01S5/02365by clamping H01S5/0237by soldering H01S5/02375Positioning of the laser chipsGroup H01S5/02375 is impacted by reclassification into groups H01S5/0238 and H01S5/02385.
Groups H01S5/02375, H01S5/0238, and H01S5/02385 should be considered in order to perform a complete search. H01S5/0238using marksGroup H01S5/0238 is incomplete pending reclassification of documents from group H01S5/02375.
Groups H01S5/02375 and H01S5/0238 should be considered in order to perform a complete search. H01S5/02385using laser light as referenceGroup H01S5/02385 is incomplete pending reclassification of documents from group H01S5/02375.
Groups H01S5/02375 and H01S5/02385 should be considered in order to perform a complete search. H01S5/0239Combinations of electrical or optical elementsGroup H01S5/0239 is incomplete pending reclassification of documents from group H01S5/022.
Groups H01S5/022 and H01S5/0239 should be considered in order to perform a complete search. H01S5/024Arrangements for thermal management H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling H01S5/02415by using a thermo-electric cooler [TEC], e.g. Peltier element H01S5/02423Liquid cooling, e.g. a liquid cools a mount of the laser H01S5/0243Laser is immersed in the coolant, i.e. the whole laser chip is immersed in the liquid for cooling H01S5/02438Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens H01S5/02446Cooling being separate from the laser chip cooling H01S5/02453Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment H01S5/0612 takes precedence, for monolithically integrated heaters see also H01S5/0261 H01S5/02461Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements H01S5/02484Sapphire or diamond heat spreaders H01S5/02492CuW heat spreaders H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06 H01S5/0261Non-optical elements, e.g. laser driver components, heaters H01S5/0265 takes precedence H01S5/0262Photo-diodes, e.g. transceiver devices, bidirectional devices H01S5/0265 takes precedence H01S5/0264for monitoring the laser-output H01S5/0265Intensity modulators intra-cavity modulators H01S5/0625 H01S5/0267Integrated focusing lens H01S5/18388 takes precedence H01S5/0268Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router" H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers H01S5/0281Coatings made of semiconductor materials H01S5/0282Passivation layers or treatments H01S5/0283Optically inactive coating on the facet, e.g. half-wave coating H01S5/0284Coatings with a temperature dependent reflectivity H01S5/0285Coatings with a controllable reflectivity H01S5/0286Coatings with a reflectivity that is not constant over the facets, e.g. apertures H01S5/0287Facet reflectivity H01S5/0288Detuned facet reflectivity, i.e. reflectivity peak is different from gain maximum H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beamsH01S5/06 takes precedence H01S5/041Optical pumping H01S5/042 Electrical excitation ; Circuits therefor monolithically integrated laser drive components H01S5/0261 H01S5/0421characterised by the semiconducting contacting layers electrodes H01S5/0425 H01S5/0422with n- and p-contacts on the same side of the active layer H01S5/0424lateral current injection H01S5/0425Electrodes, e.g. characterised by the structure H01S5/04252characterised by the material H01S5/04253having specific optical properties, e.g. transparent electrodes H01S5/04254characterised by the shape H01S5/04256characterised by the configuration H01S5/04257having positive and negative electrodes on the same side of the substrate H01S5/0427for applying modulation to the laser H01S5/0428for applying pulses to the laser H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium H01S5/0601comprising an absorbing region H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026 H01S5/0602which is an umpumped part of the active layer H01S5/0604comprising a non-linear region, e.g. generating harmonics of the laser frequency H01S5/0605Self doubling, e.g. lasing and frequency doubling by the same active medium H01S5/0607by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature H01S5/0608controlled by light, e.g. optical switch H01S5/0609acting on an absorbing region, e.g. wavelength convertors H01S5/0611wavelength convertors H01S5/0612controlled by temperature H01S5/0614controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect H01S5/0615Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed H01S5/0617using memorised or pre-programmed laser characteristics H01S5/0618Details on the linewidth enhancement parameter alpha H01S5/062by varying the potential of the electrodes H01S5/065 takes precedence H01S5/06203Transistor-type lasers H01S5/0608 takes precedence H01S5/06206Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG] H01S5/06209in single-section lasers H01S5/0608 takes precedence H01S5/06213Amplitude modulation H01S5/06216Pulse modulation or generation H01S5/0622Controlling the frequency of the radiation H01S5/06223using delayed or positive feedback H01S5/06226Modulation at ultra-high frequencies H01S5/0623using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing H01S5/06233Controlling other output parameters than intensity or frequency H01S5/06236controlling the polarisation, e.g. TM/TE polarisation switching H01S5/0624controlling the near- or far field H01S5/06243controlling the position or direction of the emitted beam H01S5/06246controlling the phase H01S5/0625in multi-section lasers H01S5/06251Amplitude modulation H01S5/06253Pulse modulation H01S5/06255Controlling the frequency of the radiation H01S5/06256with DBR-structure H01S5/06258with DFB-structure H01S5/065Mode lockingMode suppressionMode selection ; Self pulsating H01S5/0651Mode control H01S5/0652Coherence lowering or collapse, e.g. multimode emission by additional input or modulation H01S5/0653Mode suppression, e.g. specific multimode H01S5/0654Single longitudinal mode emission H01S5/0655Single transverse or lateral mode emission H01S5/0656Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component H01S5/14, H01S5/4062 and H01S5/4006 take precedence H01S5/0657Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity H01S5/0658Self-pulsating H01S5/068Stabilisation of laser output parameters H01S5/0625 takes precedence H01S5/06804by monitoring an external parameter, e.g. temperature H01S5/06808by monitoring the electrical laser parameters, e.g. voltage or current H01S5/06812by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics H01S5/06817Noise reduction H01S5/06821Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation H01S5/0683by monitoring the optical output parameters H01S5/06832Stabilising during amplitude modulation H01S5/06835Stabilising during pulse modulation or generation H01S5/06837Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature H01S5/0687Stabilising the frequency of the laser H01S5/10Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region H01S5/20 takes precedence H01S5/1003Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids H01S5/1007Branched waveguides H01S5/101Curved waveguide H01S5/1243 takes precedence H01S5/1014Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence H01S5/1017Waveguide having a void for insertion of materials to change optical properties H01S5/1021Coupled cavities H01S5/14 takes precedence H01S5/1025Extended cavities H01S5/1028Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures H01S5/1032Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region H01S5/1035Forward coupled structures [DFC] H01S5/1039Details on the cavity length H01S5/1042Optical microcavities, e.g. cavity dimensions comparable to the wavelength H01S5/1046Comprising interactions between photons and plasmons, e.g. by a corrugated surface H01S5/1053Comprising an active region having a varying composition or cross-section in a specific direction H01S5/1057varying composition along the optical axis H01S5/106varying thickness along the optical axis H01S5/1064varying width along the optical axis H01S5/1067comprising nanoparticles H01S5/1071Ring-lasers H01S5/1075Disk lasers with special modes, e.g. whispering gallery lasers H01S5/1078with means to control the spontaneous emission, e.g. reducing or reinjection H01S5/1082with a special facet structure, e.g. structured, non planar, oblique H01S5/1085Oblique facets H01S5/1089Unstable resonators H01S5/1092Multi-wavelength lasing H01S5/1096in a single cavity H01S5/11Comprising a photonic bandgap structureGroup H01S5/11 is incomplete pending reclassification of documents from group H01S5/12.
Groups H01S5/12 and H01S5/11 should be considered in order to perform a complete search. H01S5/12the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18Group H01S5/12 is impacted by reclassification into group H01S5/11.
Groups H01S5/12 and H01S5/11 should be considered in order to perform a complete search. H01S5/1203over only a part of the length of the active region H01S5/1206having a non constant or multiplicity of periods H01S5/1209Sampled grating H01S5/1212Chirped grating H01S5/1215Multiplicity of periods H01S5/1218in superstructured configuration, e.g. more than one period in an alternate sequence H01S5/1221Detuning between Bragg wavelength and gain maximum H01S5/1225with a varying coupling constant along the optical axis H01S5/1228DFB lasers with a complex coupled grating, e.g. gain or loss coupling H01S5/1231Grating growth or overgrowth details H01S5/1234Actively induced grating, e.g. acoustically or electrically induced H01S5/1237Lateral grating, i.e. grating only adjacent ridge or mesa H01S5/124incorporating phase shifts H01S5/1243by other means than a jump in the grating period, e.g. bent waveguides H01S5/1246plurality of phase shifts H01S5/125Distributed Bragg reflector [DBR] lasers H01S5/14External cavity lasers H01S5/18 takes precedence; mode locking H01S5/065 in this group external cavity elements correspond to elements inside the laser cavity but outside the monolithic semiconductor body. These elements correspond to intra cavity elements in H01S3/00 H01S5/141using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence H01S5/142which comprises an additional resonator H01S5/143Littman-Metcalf configuration, e.g. laser - grating - mirror H01S5/145Phase conjugate mirrors H01S5/146using a fiber as external cavity H01S5/147having specially shaped fibre, e.g. lensed or tapered end portion H01S5/148using a Talbot cavity H01S5/16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface H01S5/14 takes precedence H01S5/162with window regions made by diffusion or disordening of the active layer H01S5/164with window regions comprising semiconductor material with a wider bandgap than the active layer H01S5/166with window regions comprising non-semiconducting materials H01S5/168with window regions comprising current blocking layers H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavitiesGroup H01S5/18 is impacted by reclassification into group H01S5/185.
Groups H01S5/18 and H01S5/185 should be considered in order to perform a complete search. H01S5/183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] H01S5/18302comprising an integrated optical modulator H01S5/18305with emission through the substrate, i.e. bottom emission H01S5/18308having a special structure for lateral current or light confinement H01S5/18311using selective oxidation H01S5/18313by oxidizing at least one of the DBR layers H01S5/18316Airgap confined H01S5/18319comprising a periodical structure in lateral directions H01S5/18322Position of the structure H01S5/18325Between active layer and substrate H01S5/18327Structure being part of a DBR H01S5/18391 takes precedence H01S5/1833with more than one structure H01S5/18333only above the active layer H01S5/18336only below the active layer H01S5/18338Non-circular shape of the structure H01S5/18341Intra-cavity contacts H01S5/18344characterized by the mesa, e.g. dimensions or shape of the mesa H01S5/18347Mesa comprising active layer H01S5/1835Non-circular mesa H01S5/18352Mesa with inclined sidewall H01S5/18355having a defined polarisation H01S5/18358containing spacer layers to adjust the phase of the light wave in the cavity H01S5/18361Structure of the reflectors, e.g. hybrid mirrors H01S5/18363comprising air layers H01S5/18366Membrane DBR, i.e. a movable DBR on top of the VCSEL H01S5/18369based on dielectric materials H01S5/18372by native oxidation H01S5/18375based on metal reflectors H01S5/18377comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers H01S5/1838Reflector bonded by wafer fusion or by an intermediate compound H01S5/18383with periodic active regions at nodes or maxima of light intensity H01S5/18386Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface H01S5/18388Lenses H01S5/18391Aperiodic structuring to influence the near- or far-field distribution H01S5/18394Apertures, e.g. defined by the shape of the upper electrode H01S5/18397Plurality of active layers vertically stacked in a cavity for multi-wavelength emission H01S5/185having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] comprising a photonic bandgap structure H01S5/11Group H01S5/185 is incomplete pending reclassification of documents from group H01S5/18.
Groups H01S5/18 and H01S5/185 should be considered in order to perform a complete search. H01S5/187using Bragg reflection H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers H01S5/2004Confining in the direction perpendicular to the layer structure H01S5/2009by using electron barrier layers H01S5/2013MQW barrier reflection layers H01S5/2018Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers H01S5/2022Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes H01S5/2027Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes H01S5/2031characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities H01S5/2036Broad area lasers H01S5/204Strongly index guided structures H01S5/2045employing free standing waveguides or air gap confinement H01S5/205Antiguided structures H01S5/2054Methods of obtaining the confinement H01S5/2059by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion H01S5/2063obtained by particle bombardment H01S5/2068obtained by radiation treatment or annealing H01S5/2072obtained by vacancy induced diffusion H01S5/2077using lateral bandgap control during growth, e.g. selective growth, mask induced H01S5/2081using special etching techniques H01S5/2086lateral etch control, e.g. mask induced H01S5/209special etch stop layers H01S5/2095using melting or mass transport H01S5/22having a ridge or stripe structure H01S5/2201in a specific crystallographic orientation H01S5/2202by making a groove in the upper laser structure H01S5/2203with a transverse junction stripe [TJS] structure H01S5/2205comprising special burying or current confinement layers H01S5/2206based on III-V materials H01S5/2207GaAsP based H01S5/2209GaInP based H01S5/221containing aluminium H01S5/2211based on II-VI materials H01S5/2213based on polyimide or resin H01S5/2214based on oxides or nitrides H01S5/2215using native oxidation of semiconductor layers H01S5/2216nitrides H01S5/2218having special optical properties H01S5/2219absorbing H01S5/222having a refractive index lower than that of the cladding layers or outer guiding layers H01S5/2222having special electric properties H01S5/2223hetero barrier blocking layers, e.g. P-P or N-N H01S5/2224semi-insulating semiconductors H01S5/2226semiconductors with a specific doping H01S5/2227special thin layer sequence H01S5/2228quantum wells H01S5/223Buried stripe structure H01S5/227 takes precedence H01S5/2231with inner confining structure only between the active layer and the upper electrode H01S5/2232with inner confining structure between the active layer and the lower electrode H01S5/2234having a structured substrate surface H01S5/2235with a protrusion H01S5/2237with a non-planar active layer H01S5/2238with a terraced structure H01S5/227Buried mesa structure ; Striped active layer H01S5/2272grown by a mask induced selective growth H01S5/2275mesa created by etching H01S5/2277double channel planar buried heterostructure [DCPBH] laser H01S5/24having a grooved structure, e.g. V-grooved , crescent active layer in groove, VSIS laser H01S5/30Structure or shape of the active regionMaterials used for the active region H01S5/3004employing a field effect structure for inducing charge-carriers, e.g. FET H01S5/3009MIS or MOS conffigurations H01S5/3013A_IIIB_V compounds H01S5/3018A_IIB_VI compounds H01S5/3022A_IVB_VI compounds H01S5/3027IV compounds H01S5/3031Si H01S5/3036SiC H01S5/304porous Si H01S5/3045diamond H01S5/305characterised by the doping materials used in the laser structure H01S5/3054p-doping H01S5/3059in II-VI materials H01S5/3063using Mg H01S5/3068deep levels H01S5/3072Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants H01S5/3077plane dependent doping H01S5/3081using amphoteric doping H01S5/3086doping of the active layer H01S5/309doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure barriers in quantum wells per se H01S5/3407 H01S5/3095Tunnel junction H01S5/32comprising PN junctions, e.g. hetero- or double- heterostructures H01S5/34, H01S5/36 take precedence H01S5/3201incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation H01S5/3202grown on specifically orientated substrates, or using orientation dependent growth H01S5/320225polar orientation H01S5/32025non-polar orientation H01S5/320275semi-polar orientation H01S5/3203on non-planar substrates to create thickness or compositional variations H01S5/3205with an active layer having a graded composition in the growth direction H01S5/3206ordering or disordering the natural superlattice in ternary or quaternary materials H01S5/3207ordered active layer H01S5/3209disordered active layer H01S5/321having intermediate bandgap layers H01S5/3211characterised by special cladding layers, e.g. details on band-discontinuities H01S5/3213asymmetric clading layers H01S5/3214comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer H01S5/3215graded composition cladding layers H01S5/3216quantum well or superlattice cladding layers H01S5/3218specially strained cladding layers, other than for strain compensation H01S5/3219explicitly Al-free cladding layers H01S5/322type-II junctions H01S5/3222in A_IVB_VI compounds, e.g. PbSSe-laser H01S5/3223IV compounds H01S5/3224Si H01S5/3226SiC H01S5/3227porous Si H01S5/3228diamond H01S5/323in A_IIIB_V compounds, e.g. AlGaAs-laser, InP-based laser H01S5/32308emitting light at a wavelength less than 900 nm H01S5/32316comprising only (Al)GaAs H01S5/32325red laser based on InGaP H01S5/32333based on InGaAsP H01S5/32341blue laser based on GaN or GaP H01S5/3235emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers H01S5/32358containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect H01S5/32366(In)GaAs with small amount of N H01S5/32375In(As)N with small amount of P, or In(As)P with small amount of N H01S5/32383small amount of Thallum (TI), e.g. GaTIP H01S5/32391based on In(Ga)(As)P H01S5/327in A_IIB_VI compounds, e.g. ZnCdSe-laser H01S5/34comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers H01S5/36 takes precedence H01S5/3401having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers H01S5/3402intersubband lasers, e.g. transitions within the conduction or valence bands H01S5/3403having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation H01S5/3404influencing the polarisation H01S5/3406including strain compensation H01S5/3407characterised by special barrier layers H01S5/3408characterised by specially shaped wells, e.g. triangular H01S5/3409special GRINSCH structures H01S5/341Structures having reduced dimensionality, e.g. quantum wires H01S5/3412quantum box or quantum dash H01S5/3413comprising partially disordered wells or barriers H01S5/3414by vacancy induced interdiffusion H01S5/3415containing details related to carrier capture times into wells or barriers H01S5/3416tunneling through barriers H01S5/3418using transitions from higher quantum levels H01S5/3419intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures H01S5/342containing short period superlattices [SPS] H01S5/3421layer structure of quantum wells to influence the near/far field H01S5/3422comprising type-II quantum wells or superlattices H01S5/3424comprising freestanding wells H01S5/3425comprising couples wells or superlattices H01S5/3426in A_IVB_VI compounds, e.g. PbSSe-laser H01S5/3427in IV compounds H01S5/3428layer orientation perpendicular to the substrate H01S5/343in A_IIIB_V compounds, e.g. AlGaAs-laser , InP-based laser H01S5/34306emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers H01S5/34313with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs H01S5/3432the whole junction comprising only (AI)GaAs H01S5/34326with a well layer based on InGa(Al)P, e.g. red laser H01S5/34333with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser H01S5/3434with a well layer comprising at least both As and P as V-compounds H01S5/34346characterised by the materials of the barrier layers H01S5/34353based on (AI)GaAs H01S5/3436based on InGa(Al)P H01S5/34366based on InGa(Al)AS H01S5/34373based on InGa(Al)AsP H01S5/3438based on In(Al)P H01S5/34386explicitly Al-free H01S5/34393not only based on A_IIIB_V compounds H01S5/347in A_IIB_VI compounds, e.g. ZnCdSe- laser H01S5/36comprising organic materials H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30 H01S5/50 takes precedence H01S5/4006Injection locking H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms H01S5/4018Lasers electrically in series H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar H01S5/42 takes precedence H01S5/4031Edge-emitting structures H01S5/4037with active layers in more than one orientation H01S5/4043with vertically stacked active layers H01S5/405Two-dimensional arrays H01S5/4056emitting light in more than one direction H01S5/4062with an external cavity or using internal filters, e.g. Talbot filters H01S5/4068with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers H01S5/4075Beam steering H01S5/4081Near-or far field control H01S5/4087emitting more than one wavelength H01S5/4093Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion H01S5/42Arrays of surface emitting lasers H01S5/423having a vertical cavity H01S5/426Vertically stacked cavities H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30 H01S5/5009the arrangement being polarisation-insensitive H01S5/5018using two or more amplifiers or multiple passes through the same amplifier H01S5/5027Concatenated amplifiers, i.e. amplifiers in series or cascaded H01S5/5036the arrangement being polarisation-selective H01S5/5045the arrangement having a frequency filtering function H01S5/5054in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing H01S5/5063operating above threshold H01S5/5072Gain clamping, i.e. stabilisation by saturation using a further mode or frequency H01S5/5081specifically standing wave amplifiers H01S5/509Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation H01S2301/00 H01S2301/00Functional characteristics H01S2301/02ASE (amplified spontaneous emission), noiseReduction thereof H01S2301/03Suppression of nonlinear conversion, e.g. specific design to suppress for example stimulated brillouin scattering [SBS], mainly in optical fibres in combination with multimode pumping H01S2301/04Gain spectral shaping, flattening H01S2301/06Gain non-linearity, distortionCompensation thereof H01S2301/08Generation of pulses with special temporal shape or frequency spectrum H01S2301/085solitons H01S2301/14Semiconductor lasers with special structural design for lasing in a specific polarisation mode H01S2301/145TM polarisation H01S2301/16Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode H01S2301/163Single longitudinal mode H01S2301/166Single transverse or lateral mode H01S2301/17Semiconductor lasers comprising special layers H01S2301/173The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction H01S2301/176Specific passivation layers on surfaces other than the emission facet H01S2301/18Semiconductor lasers with special structural design for influencing the near- or far-field H01S2301/185for reduction of Astigmatism H01S2301/20Lasers with a special output beam profile or cross-section, e.g. non-Gaussian H01S2301/203with at least one hole in the intensity distribution, e.g. annular or doughnut mode H01S2301/206Top hat profile H01S2302/00Amplification / lasing wavelength In group H01S2302/00 and separated therefrom by a + sign the wavelength in nanometers (nnnn) is indicated. H01S2302/02THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm H01S2303/00Pumping wavelength In group H01S2303/00 and separated therefrom by a + sign the wavelength in nanometers (nnnn) is indicated. H01S2304/00Special growth methods for semiconductor lasers H01S2304/02MBE H01S2304/025MOMBE H01S2304/04MOCVD or MOVPE H01S2304/06LPE H01S2304/10CBE H01S2304/12Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes